A medical cyclotron acceleration voltage measurement method and system

Abstract

The present invention relates to the field of voltage measurement technology, and proposes a method and system for measuring the accelerating voltage of a medical cyclotron, including: obtaining a resistor voltage sequence and a resistor temperature sequence; obtaining an abnormality according to the resistor voltage value in the resistor voltage sequence; obtaining a load impedance influence according to the difference in the abnormality of different parallel resistors at the same time; obtaining several trend time periods according to the resistor temperature sequence; obtaining a temperature influence according to the resistor temperature value in the trend time period; obtaining a voltage instability coefficient according to the temperature influence and the load impedance influence; obtaining a temperature influence index according to the voltage instability coefficient; obtaining an abnormality probability according to the temperature influence index; and cleaning the resistor voltage sequence according to the abnormality probability and the load impedance influence to obtain an accelerating voltage sequence. The present invention improves the accuracy of the acceleration voltage measurement of a medical cyclotron by cleaning the resistor voltage sequence.

Description

Technical Field

[0001] The present invention relates to the technical field of voltage measurement, and in particular to a method and system for measuring the acceleration voltage of a medical cyclotron. Background Art

[0002] A medical cyclotron is a particle accelerator widely used in the medical field, especially in radiotherapy and nuclear medicine; its main function is to accelerate light particles (such as protons or alpha particles) to high energy for cancer treatment or the production of radiopharmaceuticals. In this process, accurate measurement of the acceleration voltage is crucial because it directly affects the energy of the particles and the quality of the beam. Accurate voltage measurement can ensure the stable operation of the accelerator, improve the accuracy of treatment, and ensure patient safety. Therefore, the development of high-precision and high-stability voltage measurement technology is of great significance for optimizing the performance of medical cyclotrons and improving clinical application effects.

[0003] At present, the acceleration voltage of medical cyclotron is usually measured by parallel resistance. This method divides the voltage to be measured to a lower voltage range, making it suitable for the input of conventional measuring instruments. However, in the actual measurement process, the parallel resistance will be affected by the load impedance and the temperature change of the resistance, which reduces the accuracy of the measurement of the acceleration voltage of the medical cyclotron. Summary of the invention

[0004] The present invention provides a method and system for measuring the accelerating voltage of a medical cyclotron to solve the problem that the existing parallel resistor is affected by the load impedance and the temperature change of the resistor, resulting in a decrease in the accuracy of the measuring of the accelerating voltage of the medical cyclotron. The technical solution adopted is as follows:

[0005] The present invention provides a method for measuring the accelerating voltage of a medical cyclotron, the method comprising the following steps:

[0006] Obtaining resistance voltage series and resistance temperature series of parallel resistors;

[0007] Record any parallel resistor as the target resistor; obtain the abnormality of the resistor voltage value according to the volatility of the resistor voltage value in the local range in the resistor voltage sequence of the target resistor; obtain the load impedance influence of the resistor voltage value according to the difference in the abnormality of the resistor voltage value at the same time in the resistor voltage sequence of the target resistor and other parallel resistors;

[0008] According to the change of the resistance temperature value in the resistance temperature sequence, several trend periods are obtained; according to the distribution of the resistance temperature value in the trend period, the temperature influence degree of each trend period is obtained; according to the temperature influence degree of the trend period and the load impedance influence degree of the resistance voltage value in the trend period, the voltage instability coefficient of each trend period is obtained;

[0009] According to the volatility of the voltage instability coefficient of the target resistor during the trend period, the temperature influence index of the target resistor is obtained; according to the difference in the temperature influence index between the target resistor and other parallel resistors, the abnormal probability of the target resistor is obtained;

[0010] According to the abnormal probability of the target resistor and the influence degree of the load impedance on the resistor voltage value in the resistor voltage sequence, the resistor voltage sequence of the target resistor is cleaned to obtain an accelerating voltage sequence.

[0011] Furthermore, the abnormality of the resistance voltage value is obtained according to the volatility of the resistance voltage value in the resistance voltage sequence of the target resistor in a local range, including the specific method of:

[0012] Any resistor voltage value in the resistor voltage sequence of the target resistor is recorded as the target voltage value; in the resistor voltage sequence where the target voltage value is located, the target voltage value ends, and the construction length is The window is a time series consisting of all elements in the window, and the time series consisting of all elements in the window is recorded as the reference voltage sequence of the target voltage value; wherein, is the preset window size;

[0013] Perform range normalization processing on the target voltage value according to its reference voltage sequence to obtain the relative voltage value of the target voltage value;

[0014] The variance of all elements in the reference voltage sequence of the target voltage value is recorded as the reference fluctuation degree of the target voltage value;

[0015] The ratio of the relative voltage value of the target voltage value to the reference fluctuation degree is recorded as the abnormality degree of the target voltage value.

[0016] Furthermore, the load impedance influence degree of the resistance voltage value is obtained according to the difference in the abnormal degree of the resistance voltage value of the target resistance and other parallel resistances in the resistance voltage sequence at the same time, including the specific method of:

[0017] The element in any parallel resistor other than the target resistor that is instantaneous with the target voltage value is recorded as the voltage value that is instantaneous with the target voltage value;

[0018] The calculation method for the load impedance effect on the target voltage value is:

[0019]

[0020] In the formula, The load impedance influence degree of the target voltage value; is the abnormality degree of the target voltage value; is the number of parallel resistors other than the target resistor; The target voltage value is The degree of abnormality of the simultaneous voltage values; is the maximum value function.

[0021] Furthermore, the specific method of obtaining several trend time periods according to the change of the resistance temperature value in the resistance temperature sequence is as follows:

[0022] Record any resistance temperature value in the resistance temperature sequence of the target resistor as the target temperature value, and record the difference between the target temperature value and the previous resistance temperature value as the instantaneous change degree of the target temperature value;

[0023] The DBSCAN algorithm is used to cluster all the resistance temperature values ​​in the resistance temperature sequence of the target resistor. The cluster distance measurement uses the absolute value of the difference between the instantaneous change degrees of the resistance temperature values ​​to obtain several clusters. The time period corresponding to the sequence composed of the resistance temperature values ​​that belong to the same cluster and are continuous in time series is recorded as a trend period of the target resistor.

[0024] Furthermore, the temperature influence degree of each trend period is obtained according to the distribution of the resistance temperature value in the trend period, and the specific method includes:

[0025] For any trend period of the target resistor, the ratio of the range of the resistor temperature sequence in the trend period to the time series length of the trend period is recorded as the temperature influence degree of the trend period.

[0026] Furthermore, the voltage instability coefficient of each trend period is obtained according to the temperature influence degree of the trend period and the load impedance influence degree of the resistance voltage value in the trend period, including the specific method of:

[0027] For any trend period of the target resistor, the average of the load impedance influence of all the resistance voltage values ​​of the resistance voltage sequence of the target resistor in the trend period is recorded as the overall impedance influence of the trend period;

[0028] The product of the temperature influence degree and the overall impedance influence during the trend period is recorded as the voltage instability coefficient during the trend period.

[0029] Furthermore, the temperature influence index of the target resistor is obtained according to the volatility of the voltage instability coefficient in the trend period of the target resistor, including the specific method of:

[0030]

[0031] In the formula, is the temperature influence index of the target resistor; is the number of trend periods of the target resistance; The target resistance Voltage instability coefficient for a trend period; The target resistance Voltage instability coefficient for a trend period; is the absolute value function.

[0032] Furthermore, the abnormal probability of the target resistor is obtained according to the difference in temperature influence index between the target resistor and other parallel resistors, including the specific method of:

[0033] The sum of the absolute values ​​of the differences between the target resistor and the temperature influence indexes of all other resistors is recorded as the abnormal probability of the target resistor.

[0034] Furthermore, the resistance voltage sequence of the target resistance is cleaned according to the abnormal probability of the target resistance and the influence degree of the load impedance on the resistance voltage value in the resistance voltage sequence to obtain the acceleration voltage sequence, including the specific method of:

[0035]

[0036] In the formula, The first resistor in the resistance voltage sequence of the target resistor Cleaning voltage of resistance voltage value; The first resistor in the resistance voltage sequence of the target resistor The voltage value of a resistor; is the abnormal probability of the target resistor; The first resistor in the resistance voltage sequence of the target resistor The degree of influence of load impedance on the voltage value of a resistor; is a linear normalization function;

[0037] At any moment, the average of the cleaning voltages corresponding to the resistance voltage sequence of all parallel resistors at that moment is obtained, and the average is recorded as the acceleration voltage of the medical cyclotron at that moment; the sequence composed of the acceleration voltages at all moments is recorded as the acceleration voltage sequence of the medical cyclotron.

[0038] The present invention also proposes a medical cyclotron acceleration voltage measurement system, which includes a memory, a processor, and a computer program stored in the memory and running on the processor, and the processor implements the steps of the above method when executing the computer program.

[0039] The beneficial effects of the present invention are as follows: when using parallel resistors to measure the acceleration voltage of a medical cyclotron, the parallel resistors will be affected by changes in load impedance. The present invention obtains the abnormality of the resistor voltage value according to the volatility of the resistor voltage value, and then obtains the load impedance influence degree of the resistor voltage value, and judges the influence of the external load impedance on the measurement process; at the same time, the temperature of the parallel resistor will increase with the change of time, and the temperature change will affect the resistance value of the resistor, and then affect the accuracy of the measurement. The present invention obtains the temperature influence index through the temperature change, and then judges the abnormal probability of the parallel resistor; the parallel resistor will be affected by the load impedance and the temperature change of the resistor, and the accuracy of the measurement of the acceleration voltage of the medical cyclotron will be reduced. The present invention combines the abnormal probability of the parallel resistor with the load impedance influence degree of the resistor voltage value in the resistor voltage sequence, and cleans the resistor voltage sequence of the target resistor to obtain the acceleration voltage. So far, the present invention improves the accuracy of the measurement of the acceleration voltage of the medical cyclotron by cleaning the resistor voltage sequence. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0041] Figure 1 A schematic flow chart of a method for measuring the accelerating voltage of a medical cyclotron provided by one embodiment of the present invention. DETAILED DESCRIPTION

[0042] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] See also Figure 1 , which shows a flow chart of a method for measuring the accelerating voltage of a medical cyclotron provided by an embodiment of the present invention, the method comprising the following steps:

[0044] Step S001, obtaining a resistance voltage sequence and a resistance temperature sequence of parallel resistors.

[0045] It should be noted that the purpose of this embodiment is to clean the resistance voltage obtained by the parallel resistors according to the degree to which the voltage of the parallel resistors is affected by the load impedance outside the resistors and the abnormal probability of the resistors themselves, so as to obtain more accurate acceleration voltage measurement results, so the voltage and temperature of the parallel resistors are first obtained.

[0046] It should be further explained that in a medical cyclotron, particles experience frequent electric field changes in the Dee plate gap, thereby achieving effective acceleration. By measuring in the Dee plate gap, the acceleration voltage can be evaluated to ensure that the accelerator operates in the best condition; and the vector network analyzer is a high-precision measuring instrument. In the voltage measurement of the medical cyclotron, the vector network analyzer obtains the acceleration voltage value in real time by connecting to the high-frequency cavity power input terminal of the accelerator, thereby ensuring the stable operation of the accelerator and the accuracy of the treatment effect; there are several parallel resistors in the voltage divider of the measurement circuit. The role of the parallel resistors is to provide a voltage proportional to the acceleration voltage for the measuring instrument through the voltage divider principle, and the acceleration voltage of the medical cyclotron is obtained through the voltage data of each parallel resistor.

[0047] Specifically, multiple measuring points are set at equal intervals at the gap of the Dee board, and it is ensured that the measuring points and the port of the vector network analyzer are in the same reference plane. One port of the vector network analyzer is connected to the power input port of the high-frequency cavity of the cyclotron, and the other port is connected to the probe device; the needle of the probe device is brought into contact with the measuring point on the Dee board to obtain the resistance voltage value corresponding to each parallel resistor. Since the medical cyclotron requires precise real-time monitoring, for any parallel resistor, the resistance voltage value is collected once every millisecond, and the time series consisting of the resistance voltage values ​​collected at all times is recorded as the resistance voltage sequence of the parallel resistor.

[0048] It should be noted that when using parallel resistors to measure the acceleration voltage of a medical cyclotron, since temperature changes will affect the resistance of the resistors, thereby affecting the voltage division effect and further affecting the accuracy of the measurement, it is necessary to measure the temperature value of each parallel resistor.

[0049] Specifically, a temperature sensor is installed on each parallel resistor. For any parallel resistor, the resistance temperature value is collected once each time the resistance voltage value is collected. The time series consisting of the resistance temperature values ​​collected at all times is recorded as the resistance temperature sequence of the parallel resistor.

[0050] Step S002, record any parallel resistor as the target resistor; obtain the abnormality of the resistor voltage value according to the volatility of the resistor voltage value in the local range in the resistor voltage sequence of the target resistor; obtain the load impedance influence of the resistor voltage value according to the difference in the abnormality of the resistor voltage value at the same time in the resistor voltage sequence of the target resistor and other parallel resistors.

[0051] It should be noted that in the process of using parallel resistance to measure the acceleration voltage of a medical cyclotron, since the acceleration voltage measured by the parallel resistance will be affected by the load impedance, if the load impedance changes, it may lead to inaccurate acceleration voltage measurement.

[0052] It should be further explained that in the process of using parallel resistors to measure the acceleration voltage of a medical cyclotron, for any resistance-voltage sequence of a parallel resistor, the resistance voltage value is usually in a state of small fluctuations, and when affected by changes in load impedance, the resistance voltage value will experience a brief surge. In order to avoid the impact of such data fluctuations on the measurement of the acceleration voltage of a medical cyclotron, the fluctuation of the resistance voltage value is analyzed.

[0053] Specifically, any parallel resistor is recorded as the target resistor; any resistor voltage value in the resistor voltage sequence of the target resistor is recorded as the target voltage value; in the resistor voltage sequence where the target voltage value is located, the target voltage value is used as the end, and the construction length is The window is a time series consisting of all elements in the window, and the time series consisting of all elements in the window is recorded as the reference voltage sequence of the target voltage value; wherein, is the preset window size. Give a narrative.

[0054] It should be noted that when the resistor voltage value experiences a short-term surge, the degree of the surge is much greater than the degree of the small fluctuation of the resistor voltage value. Therefore, when the elements in the reference voltage sequence of the resistor voltage value are more stable and the resistor voltage value is larger, the resistor voltage value may experience an abnormal fluctuation phenomenon of a short-term surge.

[0055] Specifically, the target voltage value is subjected to range normalization processing according to its reference voltage sequence to obtain a relative voltage value of the target voltage value;

[0056] The variance of all elements in the reference voltage sequence of the target voltage value is recorded as the reference fluctuation degree of the target voltage value;

[0057] The ratio of the relative voltage value of the target voltage value to the reference fluctuation degree is recorded as the abnormality degree of the target voltage value.

[0058] It should be noted that due to the differences in the device states measured by different parallel resistors, the abnormal fluctuation of the resistance voltage value caused by the change in load impedance is often manifested in the resistance voltage sequence of a single resistor. According to the voltage division law of series resistors, the voltages obtained on all parallel resistors are theoretically the same at the same sampling time. Therefore, the abnormal degree of the resistance voltage value is verified based on the difference in the abnormal degree between the resistance voltage values ​​of the parallel resistors.

[0059] Furthermore, an element in any parallel resistor other than the target resistor that is at the same time as the target voltage value is recorded as a voltage value simultaneous with the target voltage value.

[0060] It should be further explained that if the target voltage value fluctuates abnormally, the target voltage value will have a different degree of abnormality from all its simultaneous voltage values. At the same time, if the target voltage value has a higher degree of abnormality, the load impedance will have a greater impact on the target voltage value.

[0061] Specifically, the degree of influence of load impedance on the target voltage value is calculated as follows:

[0062]

[0063] In the formula, The load impedance influence degree of the target voltage value; is the abnormality degree of the target voltage value; is the number of parallel resistors other than the target resistor; The target voltage value is The degree of abnormality of the simultaneous voltage values; is the maximum value function.

[0064] Step S003, according to the change of the resistance temperature value in the resistance temperature sequence, obtain several trend time periods; according to the distribution of the resistance temperature value in the trend time period, obtain the temperature influence degree of each trend time period; according to the temperature influence degree of the trend time period and the load impedance influence degree of the resistance voltage value in the trend time period, obtain the voltage instability coefficient of each trend time period.

[0065] It should be noted that as the medical cyclotron continues to work, the temperature of the parallel resistor changes. Since the temperature change may cause resistance value deviation, the probability of abnormal fluctuations will increase with the increase of working time of the medical cyclotron. Judging abnormalities only based on the changes in the resistance voltage value can easily lead to misjudgment and reduce the accuracy of acceleration voltage measurement.

[0066] Specifically, any resistance temperature value in the resistance temperature sequence of the target resistor is recorded as the target temperature value, and the difference between the target temperature value and the previous resistance temperature value is recorded as the instantaneous change degree of the target temperature value;

[0067] The DBSCAN algorithm is used to cluster all the resistance temperature values ​​in the resistance temperature sequence of the target resistor. The cluster distance measurement adopts the absolute value of the difference between the instantaneous change degrees of the resistance temperature values ​​to obtain several clusters. The DBSCAN algorithm is a well-known technology, and the specific method is not introduced here. The time period corresponding to the sequence composed of the resistance temperature values ​​belonging to the same cluster and continuous in time sequence is recorded as a trend period of the target resistor.

[0068] For any trend period of the target resistor, the ratio of the range of the resistor temperature sequence in the trend period to the time series length of the trend period is recorded as the temperature influence degree of the trend period.

[0069] It should be noted that the greater the range of the resistance temperature sequence in the trend period and the smaller the time series length of the trend period, the faster the resistance temperature value rises in the trend period and the greater the influence of temperature on the resistance voltage value.

[0070] It should be noted that, when the temperature influence is greater and the load impedance influence is greater, the voltage instability is greater.

[0071] Specifically, for any trend period of the target resistor, the average of the load impedance influence degrees of all the resistance voltage values ​​of the resistance voltage sequence of the target resistor in the trend period is recorded as the overall impedance influence of the trend period;

[0072] The product of the temperature influence degree and the overall impedance influence during the trend period is recorded as the voltage instability coefficient during the trend period.

[0073] Step S004, obtaining a temperature influence index of the target resistor according to the volatility of the voltage instability coefficient during the trend period of the target resistor; and obtaining an abnormal probability of the target resistor according to the difference in the temperature influence index between the target resistor and other parallel resistors.

[0074] It should be noted that when using parallel resistors to measure the acceleration voltage of a medical cyclotron, the temperature of the parallel resistors will continue to increase over time. If the voltage instability coefficient fluctuates more over time, it means that the temperature has a greater impact on the voltage abnormality.

[0075] Specifically, the temperature impact index of the target resistor is calculated as follows:

[0076]

[0077] In the formula, is the temperature influence index of the target resistor; is the number of trend periods of the target resistance; The target resistance Voltage instability coefficient for a trend period; The target resistance Voltage instability coefficient for a trend period; is the absolute value function.

[0078] It should be noted that since the parallel resistors have the same resistance and the same voltage, the temperatures of the parallel resistors are also very similar; therefore, the temperature influence index between the parallel resistors is analyzed. If the amplitude of the abnormal change of a parallel resistor relative to other parallel resistors when affected by the same temperature is larger, the possibility of the parallel resistor itself detecting abnormal voltage is greater, that is, the abnormal probability of the parallel resistor is higher.

[0079] Specifically, the sum of the absolute values ​​of the differences between the temperature influence indexes of the target resistor and all other resistors is recorded as the abnormal probability of the target resistor.

[0080] Step S005 , according to the abnormal probability of the target resistor and the influence degree of the load impedance on the resistor voltage value in the resistor voltage sequence, the resistor voltage sequence of the target resistor is cleaned to obtain an acceleration voltage sequence.

[0081] It should be noted that when using parallel resistors to measure the acceleration voltage of a medical cyclotron, the resistance voltage sequence obtained by the parallel resistors is affected by both the load impedance outside the resistors and the abnormal probability of the resistors themselves. Therefore, data cleaning is performed on the resistance voltage sequence obtained by the parallel resistors.

[0082] Specifically, the resistance voltage sequence of the target resistor The calculation method of cleaning voltage for each resistor voltage value is:

[0083]

[0084] In the formula, The first resistor in the resistance voltage sequence of the target resistor Cleaning voltage of resistance voltage value; The first resistor in the resistance voltage sequence of the target resistor The voltage value of a resistor; is the abnormal probability of the target resistor; The first resistor in the resistance voltage sequence of the target resistor The degree of influence of load impedance on the voltage value of a resistor; is a linear normalization function, and the normalized object is the voltage value of all parallel resistors. .

[0085] Furthermore, at any moment, the average of the cleaning voltages corresponding to the resistance voltage sequences of all parallel resistors at that moment is obtained, and the average is recorded as the acceleration voltage of the medical cyclotron at that moment; the sequence formed by the acceleration voltages at all moments is recorded as the acceleration voltage sequence of the medical cyclotron.

[0086] Another embodiment of the present invention provides a medical cyclotron acceleration voltage measurement system, which includes a memory, a processor, and a computer program stored in the memory and running on the processor. When the processor executes the computer program, the above method steps S001 to S005 are implemented.

[0087] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for measuring the accelerating voltage of a medical cyclotron, characterized in that: The method comprises the following steps: Obtaining resistance voltage series and resistance temperature series of parallel resistors; Record any parallel resistor as the target resistor; obtain the abnormality of the resistor voltage value according to the volatility of the resistor voltage value in the local range in the resistor voltage sequence of the target resistor; obtain the load impedance influence of the resistor voltage value according to the difference in the abnormality of the resistor voltage value at the same time in the resistor voltage sequence of the target resistor and other parallel resistors; According to the change of the resistance temperature value in the resistance temperature sequence, several trend periods are obtained; according to the distribution of the resistance temperature value in the trend period, the temperature influence degree of each trend period is obtained; according to the temperature influence degree of the trend period and the load impedance influence degree of the resistance voltage value in the trend period, the voltage instability coefficient of each trend period is obtained; According to the volatility of the voltage instability coefficient of the target resistor during the trend period, the temperature influence index of the target resistor is obtained; according to the difference in the temperature influence index between the target resistor and other parallel resistors, the abnormal probability of the target resistor is obtained; According to the abnormal probability of the target resistor and the influence degree of the load impedance on the resistor voltage value in the resistor voltage sequence, the resistor voltage sequence of the target resistor is cleaned to obtain an accelerating voltage sequence; The voltage instability coefficient of each trend period is obtained according to the temperature influence degree of the trend period and the load impedance influence degree of the resistance voltage value in the trend period, including the specific method of: For any trend period of the target resistor, the average of the load impedance influence of all the resistance voltage values ​​of the resistance voltage sequence of the target resistor in the trend period is recorded as the overall impedance influence of the trend period; The product of the temperature influence degree and the overall impedance influence in the trend period is recorded as the voltage instability coefficient in the trend period; The specific method of obtaining the temperature influence index of the target resistor according to the volatility of the voltage instability coefficient in the trend period of the target resistor is as follows: In the formula, is the temperature influence index of the target resistor; is the number of trend periods of the target resistance; The target resistance Voltage instability coefficient for a trend period; The target resistance Voltage instability coefficient for a trend period; is the absolute value function; The specific method of obtaining the load impedance influence degree of the resistance voltage value includes: The element in any parallel resistor other than the target resistor that is instantaneous with the target voltage value is recorded as the voltage value that is instantaneous with the target voltage value; The calculation method for the load impedance effect on the target voltage value is: In the formula, The load impedance influence degree of the target voltage value; is the abnormality degree of the target voltage value; is the number of parallel resistors other than the target resistor; The target voltage value is The degree of abnormality of the simultaneous voltage values; is the maximum value function; The specific method for obtaining the temperature influence degree of each trend period includes: For any trend period of the target resistor, the ratio of the range of the resistor temperature sequence in the trend period to the time series length of the trend period is recorded as the temperature influence degree of the trend period.

2. A method for measuring the accelerating voltage of a medical cyclotron according to claim 1, characterized in that: The specific method of obtaining the abnormality degree of the resistance voltage value according to the volatility of the resistance voltage value in the resistance voltage sequence of the target resistor in a local range includes: Any resistor voltage value in the resistor voltage sequence of the target resistor is recorded as the target voltage value; in the resistor voltage sequence where the target voltage value is located, the target voltage value ends, and the construction length is The window is a time series consisting of all elements in the window, and the time series consisting of all elements in the window is recorded as the reference voltage sequence of the target voltage value; wherein, is the preset window size; Perform range normalization processing on the target voltage value according to its reference voltage sequence to obtain the relative voltage value of the target voltage value; The variance of all elements in the reference voltage sequence of the target voltage value is recorded as the reference fluctuation degree of the target voltage value; The ratio of the relative voltage value of the target voltage value to the reference fluctuation degree is recorded as the abnormality degree of the target voltage value.

3. The method for measuring the accelerating voltage of a medical cyclotron according to claim 1, characterized in that: The specific method of obtaining several trend time periods according to the change of the resistance temperature value in the resistance temperature sequence is as follows: Record any resistance temperature value in the resistance temperature sequence of the target resistor as the target temperature value, and record the difference between the target temperature value and the previous resistance temperature value as the instantaneous change degree of the target temperature value; The DBSCAN algorithm is used to cluster all the resistance temperature values ​​in the resistance temperature sequence of the target resistor. The cluster distance measurement uses the absolute value of the difference between the instantaneous change degrees of the resistance temperature values ​​to obtain several clusters. The time period corresponding to the sequence of resistance temperature values ​​that belong to the same cluster and are continuous in time series is recorded as a trend period of the target resistance.

4. The method for measuring the accelerating voltage of a medical cyclotron according to claim 1, characterized in that: The specific method of obtaining the abnormal probability of the target resistor according to the difference in the temperature influence index between the target resistor and other parallel resistors is as follows: The sum of the absolute values ​​of the differences between the target resistor and the temperature influence indexes of all other resistors is recorded as the abnormal probability of the target resistor.

5. The method for measuring the accelerating voltage of a medical cyclotron according to claim 1, characterized in that: The method of cleaning the resistance voltage sequence of the target resistance according to the abnormal probability of the target resistance and the influence degree of the load impedance on the resistance voltage value in the resistance voltage sequence to obtain the acceleration voltage sequence includes the following specific methods: In the formula, The first resistor in the resistance voltage sequence of the target resistor Cleaning voltage of resistance voltage value; The first resistor in the resistance voltage sequence of the target resistor The voltage value of a resistor; is the abnormal probability of the target resistor; The first resistor in the resistance voltage sequence of the target resistor The degree of influence of load impedance on the voltage value of a resistor; is a linear normalization function; At any moment, the average of the cleaning voltages corresponding to the resistance voltage sequence of all parallel resistors at that moment is obtained, and the average is recorded as the acceleration voltage of the medical cyclotron at that moment; the sequence composed of the acceleration voltages at all moments is recorded as the acceleration voltage sequence of the medical cyclotron.

6. A medical cyclotron acceleration voltage measurement system, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that: When the processor executes the computer program, the steps of the medical cyclotron acceleration voltage measurement method as described in any one of claims 1 to 5 are implemented.

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