Memory bank fault positioning protection method and device, medium and equipment

Abstract

The invention relates to the technical field of memory bank data processing, and particularly discloses a memory bank fault positioning protection method and device, a medium and equipment. According to the method, a high-precision current sensor is added to monitor the current state of each power supply circuit of each memory bank, and software is matched to measure the power consumption of a single memory bank; according to the method, each power supply circuit of each memory bank with potential faults is accurately identified, so that each pre-estimated fault power supply circuit of each pre-estimated fault memory bank is positioned, a basis is provided for subsequent more detailed evaluation of an abnormal loss coefficient of each pre-estimated fault power supply circuit of the pre-estimated fault memory bank, and the memory bank with open and short circuit faults in the power supply circuits is identified. Therefore, fault protection can be carried out on the memory bank, effective protection measures can be taken quickly, fault expansion of the memory bank is prevented, and stable operation of the memory bank is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of memory bar data processing, and in particular to a method, device, medium and equipment for locating and protecting a memory bar fault. Background Art

[0002] With the rapid development of computer technology, memory sticks are the core components of computer system data storage and exchange. Their stability and reliability are crucial to the performance of the entire computer system. However, traditional memory stick fault detection methods have problems such as low fault detection efficiency and difficulty in accurately locating the fault point, which cannot stably improve the normal operation and maintenance efficiency of the memory stick.

[0003] For example, the invention patent with announcement number CN110688266B relates to a method, device and storage medium for locating a faulty memory stick, the method comprising: obtaining a first mapping table and a second mapping table, obtaining an error address of a target faulty memory stick, obtaining a slot address bit in the error address and a value corresponding to the slot address bit according to the first mapping table to obtain a slot address, locating the slot where the target faulty memory stick is located on the motherboard as a target slot according to the slot address and the first mapping table; obtaining a channel address bit and a value corresponding to the channel address bit according to the second mapping table to obtain a channel address, locating the channel where the target faulty memory stick is located on the motherboard as a target channel according to the channel address and the second mapping table, and locating the target faulty memory stick on the motherboard according to the target slot and the target channel.

[0004] For example, the invention patent with announcement number CN111078479B discloses a method for training a memory detection model, a method and device for memory detection. The method is applied to fault detection, including: obtaining a memory status historical data set, generating a real fault label set based on the memory status historical data set, generating multiple feature subsets to be trained based on the memory status historical data set, obtaining a predicted fault label subset corresponding to the feature subset to be trained through the memory detection sub-model to be trained, and if the predicted fault label subset and the real fault label subset meet the model verification conditions, then generating a memory detection sub-model according to the memory detection sub-model to be trained.

[0005] However, in the process of implementing the embodiments of the present application, it was found that the above technology has at least the following technical problems: currently, when locating the fault of the memory stick, it is difficult to take quick and effective protection measures for the memory stick by only locating the position of the faulty memory stick, and it may also increase the cost and time of repairing and replacing the memory stick. Summary of the invention

[0006] In view of the deficiencies in the prior art, the present invention provides a method, device, medium and equipment for locating and protecting a memory bar fault, which can effectively solve the problems involved in the above-mentioned background technology.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions: The first aspect of the present invention provides a memory bar fault location protection method, including: S1. Based on the power input end of the memory slot area, perform current sampling operations on the current sensors of each memory bar adjacent to the power input end, thereby obtaining the current waveform curve of the current sensor belonging to each power circuit of each memory bar, analyzing the current abnormal fluctuation index of each power circuit of each memory bar, and comparing it with the current abnormal fluctuation threshold, thereby locating each power circuit of each memory bar whose current abnormal fluctuation index is greater than the current abnormal fluctuation threshold, and marking them as each estimated fault power circuit of each memory bar; S2. Collect each estimated The voltage data of each estimated faulty power supply circuit of each faulty memory stick is collected, and the abnormal loss coefficient of each estimated faulty power supply circuit of each faulty memory stick is evaluated, and compared with the abnormal loss threshold, thereby locating each estimated faulty power supply circuit of each estimated faulty memory stick whose abnormal loss coefficient is greater than the abnormal loss threshold, and marking them as each faulty power supply circuit of each faulty memory stick; S3. The abnormal parameters of each faulty power supply circuit of each faulty memory stick are collected, and the fault type of each faulty power supply circuit of each faulty memory stick is determined by the memory stick fault locating system, and the fault protection method of each faulty power supply circuit of each faulty memory stick is matched, thereby performing fault protection on each faulty power supply circuit of each faulty memory stick.

[0008] As a further method, the fault type of each faulty power supply circuit of each faulty memory stick is determined, and the specific determination process is: comparing the fault diagnosis index of each faulty power supply circuit of each faulty memory stick with the fault diagnosis reference value, if the fault diagnosis index of a faulty power supply circuit is greater than the fault diagnosis reference value, then the fault type corresponding to the faulty power supply circuit is marked as a short circuit fault, if the fault diagnosis index of a faulty power supply circuit is less than or equal to the fault diagnosis reference value, then the fault type corresponding to the faulty power supply circuit is marked as an open circuit fault, thereby determining the fault type of each faulty power supply circuit of each faulty memory stick.

[0009] As a further method, fault protection is performed on each faulty power supply circuit of each faulty memory stick. The specific analysis process is: the fault type of each faulty power supply circuit of each faulty memory stick is determined by a memory stick fault locating system, and matched in turn with the short-circuit fault protection method corresponding to the short-circuit fault and the open-circuit fault protection method corresponding to the open-circuit fault preset in the memory stick database, thereby obtaining the fault protection method corresponding to each faulty power supply circuit of each faulty memory stick, and finally implementing fault protection on each faulty power supply circuit of each faulty memory stick.

[0010] The second aspect of the present invention provides a device for a memory stick fault location protection method, characterized in that it includes: a current sensor, a memory slot, a memory stick and a memory stick fault location system; the power input end of the memory slot area is adjacent to the current sensor; the current sensor is used to detect current faults in the power circuit of the memory stick; the memory stick fault location system determines the fault type of the power circuit of the memory stick; the current sensor is used to collect the real-time current value of each power circuit of each memory stick; the voltage sensor is used to measure the real-time voltage value corresponding to each estimated fault power circuit of each estimated fault memory stick at each current monitoring time point; the processor is used to analyze the real-time current value of each power circuit of each memory stick and the real-time voltage value corresponding to each estimated fault power circuit of each estimated fault memory stick at each current monitoring time point, thereby determining the fault type of each fault power circuit of each faulty memory stick through the memory stick fault location system, and implementing fault protection for each faulty power circuit of each faulty memory stick.

[0011] A third aspect of the present invention provides a computer-readable storage medium for storing a program, wherein the program, when executed by a processor, implements the method for locating and protecting a memory bar fault.

[0012] A fourth aspect of the present invention provides an electronic device, characterized in that the electronic device includes a memory for storing computer program instructions and a processor for executing program instructions, wherein when the computer program instructions are executed by the processor, the electronic device is triggered to execute the memory bar fault location protection method.

[0013] Compared with the prior art, the embodiments of the present invention have at least the following advantages or beneficial effects: (1) The present invention provides a method, device, medium and equipment for locating and protecting a memory stick fault. By adding a high-precision current sensor to monitor the current state of each power circuit of each memory stick, and cooperating with software to measure the power consumption of a single memory stick, each power circuit of each memory stick with a potential fault can be accurately identified, thereby locating each estimated fault power circuit of each estimated faulty memory stick, providing a basis for a subsequent more detailed evaluation of the abnormal loss coefficient of each estimated fault power circuit of the estimated faulty memory stick, identifying a memory stick with an open or short circuit fault in the power circuit, and performing fault protection on the memory stick, so as to quickly take effective protection measures to prevent the expansion of the memory stick fault and ensure the stable operation of the memory stick.

[0014] (2) The present invention analyzes the average current value, intermittent factor and pulse factor of each power circuit of each memory stick during the fault monitoring period, thereby locating each power circuit of each memory stick whose current abnormal fluctuation index is greater than the current abnormal fluctuation threshold. It can more accurately determine whether the power circuit may have a fault and can be accurate to the specific memory stick and power circuit, which greatly facilitates subsequent maintenance and replacement work.

[0015] (3) The present invention analyzes the average temperature and equivalent operating resistance value of each faulty power circuit of each faulty memory stick during the fault monitoring period, thereby identifying the memory stick with an open short circuit fault, specifically locating the fault point as the faulty power circuit in the memory slot area and actively performing overcurrent protection, which is helpful in guiding memory stick maintenance personnel to quickly locate and repair the fault, thereby improving the efficiency and accuracy of memory stick fault detection, while reducing the maintenance cost and time of the memory stick. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present invention is further described using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. A person skilled in the art can obtain other drawings based on the following drawings without creative work.

[0017] Figure 1 The figure is a schematic flow chart of the method steps of the present invention.

[0018] Figure 2 It is a schematic diagram of the memory slot area involved in the present invention.

[0019] Figure 3 It is a schematic diagram of the current waveform curve involved in the present invention.

[0020] Reference numerals: 1. memory slot; 2. current sensor; 3. memory stick. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0022] Reference Figure 1As shown, the first aspect of the present invention provides a memory bar fault location protection method, comprising: S1. Based on the power input end of the memory slot area, perform a current sampling operation on the current sensor of each memory bar adjacent to the power input end, thereby obtaining the current waveform curve of the current sensor belonging to each power circuit of each memory bar, analyzing the current abnormal fluctuation index of each power circuit of each memory bar, and comparing it with the current abnormal fluctuation threshold, thereby locating each power circuit of each memory bar whose current abnormal fluctuation index is greater than the current abnormal fluctuation threshold, and marking it as each estimated fault power circuit of each memory bar; the above-mentioned memory slot area is as follows Figure 2 As shown, for example, the power input end of the memory slot 1 is connected to two current sensors 2 with a resolution of 1 mA, wherein the memory stick 3 is placed in a memory slot similar to the memory slot 1; the above-mentioned acquisition of the current waveform curve of the current sensor belonging to each power circuit of each memory stick refers to collecting the real-time current value of each power circuit of each memory stick through the current sensor with a resolution of 1 mA installed on each power circuit of each memory stick, and generating the current waveform curve using the matrix laboratory software.

[0023] It should be explained that the above-mentioned mark is each estimated fault power supply circuit of each estimated fault memory stick, and the specific process is: compare the current abnormal fluctuation index of each power supply circuit of each memory stick with the current abnormal fluctuation threshold. If the current abnormal fluctuation index of a power supply circuit of a certain memory stick is greater than the current abnormal fluctuation threshold, then the power supply circuit of the memory stick is recorded as the estimated fault power supply circuit of the memory stick with the estimated fault. Thus, the power supply circuits of each memory stick corresponding to the current abnormal fluctuation index greater than the current abnormal fluctuation threshold are statistically recorded as the estimated fault power supply circuits of each estimated fault memory stick, wherein the current abnormal fluctuation threshold is the maximum value of the analyzed current abnormal fluctuation index, which is determined by the memory stick maintenance personnel based on historical conditions. If the current abnormal fluctuation index of a power supply circuit of a certain memory stick is greater than the current abnormal fluctuation threshold, it indicates that the power supply circuit of the memory stick has a greater risk of failure and needs to be further analyzed. If the current abnormal fluctuation index of a power supply circuit of a certain memory stick is less than or equal to the current abnormal fluctuation threshold, it indicates that the power supply circuit of the memory stick has a smaller risk of failure and does not need to be further analyzed.

[0024] In a specific embodiment, the present invention analyzes the average current value, intermittent factor and pulse factor of each power circuit of each memory stick during the fault monitoring period, thereby locating each power circuit of each memory stick whose current abnormal fluctuation index is greater than the current abnormal fluctuation threshold. It can more accurately determine whether the power circuit may have a fault and can be precise to the specific memory stick and power circuit, which greatly facilitates subsequent maintenance and replacement work.

[0025] Specifically, the abnormal current fluctuation index of each power circuit of each memory stick, in this embodiment, is obtained by comprehensively analyzing the average current value, intermittent factor and pulse factor of each power circuit of each memory stick during the fault monitoring period, and is used to analyze the value of the abnormal current fluctuation degree of each power circuit of each memory stick. The specific expression is: ; in, is the abnormal current fluctuation index of the bth power supply circuit of the ath memory stick. If the average current value deviates greatly from the rated current value, it indicates that the current transmission abnormality of the power supply circuit occurs frequently, and the abnormally large and abnormally small current values ​​occur frequently, which may lead to an increase in the intermittent factor and the pulse factor, and at the same time improve the abnormal current fluctuation index of the power supply circuit. Through comprehensive quantitative analysis of the average current value, the intermittent factor and the pulse factor, a more comprehensive perspective is provided for analyzing the operating status of each power supply circuit of each memory stick, which is conducive to helping understand and predict each power supply circuit of each memory stick that may fail, can shorten the time of subsequent analysis, more quickly determine the faulty area, and significantly improve the reliability and operating efficiency of the memory stick.

[0026] The average current value of the bth power supply circuit of the ath memory stick during the fault monitoring cycle can help evaluate whether there is any abnormality in the working state of the bth power supply circuit of the ath memory stick during the fault monitoring cycle, wherein the fault monitoring cycle represents the time period for analyzing the performance of the power supply circuit of the memory stick, and the length of the time period is determined by the memory stick maintenance personnel based on actual conditions.

[0027] is the intermittent factor of the bth power supply circuit of the ath memory bank during the fault monitoring period. If the value of the intermittent factor is high, it indicates that there is a current continuity problem in the power supply circuit.

[0028] is the pulse factor of the bth power supply circuit of the ath memory stick during the fault monitoring period. If the pulse factor is high, it indicates that there is a large instantaneous current pulse in the power supply circuit, which has a significant negative impact on the stable operation of the power supply circuit.

[0029] This is the rated current value extracted from the memory module specification sheet and represents the reference value for analyzing the power supply circuit of the memory module.

[0030] It is the correction factor corresponding to the average current value preset in the memory stick database, which represents the numerical value of the correction degree of the average current value change. The fitting curve corresponding to the average current value is obtained by fitting the relationship between the historical memory stick load type, the historical memory stick load number and the average current value, and the fitting curve corresponding to the average current value is brought into the fitting curve according to the real-time memory stick load type and the memory stick load number, thereby obtaining the correction factor corresponding to the average current value in this example. The value range of this numerical value in this example is 0 to 1.

[0031] It is the influence factor corresponding to the unit value of the intermittent factor preset in the memory bar database, which represents the influence degree of the unit value of the intermittent factor on the current abnormal fluctuation index. The fitting curve corresponding to the intermittent factor is obtained by fitting the relationship between the historical ambient temperature of the memory bar, the historical ambient humidity of the memory bar and the intermittent factor, and the fitting curve corresponding to the intermittent factor is brought into the fitting curve according to the real-time ambient temperature of the memory bar and the ambient humidity of the memory bar, thereby obtaining the influence factor corresponding to the unit value of the intermittent factor in this example. The value range of this value in this example is 0 to 1.

[0032] It is the influence factor corresponding to the pulse factor unit value preset in the memory bar database, which represents the influence degree of the pulse factor unit value on the current abnormal fluctuation index. The fitting curve corresponding to the pulse factor is obtained by fitting the relationship between the historical current demand peak, the historical power supply circuit aging and the pulse factor. The fitting curve corresponding to the pulse factor is introduced according to the real-time current demand peak and the power supply circuit aging, thereby obtaining the influence factor corresponding to the pulse factor unit value in this example. The value range of this value in this example is 0 to 1.

[0033] It should be explained that the above-mentioned memory bar database refers to a database storing memory bar data.

[0034] a is the number of each memory bank, , b is the total number of memory bars, f is the number of each power circuit, , m is the total number of power circuits.

[0035] Furthermore, the abnormal current fluctuation index of each power circuit of each memory stick is analyzed. The specific analysis process is: data processing is performed on the current waveform curve of the current sensor belonging to each power circuit of each memory stick to obtain the current waveform curve function of the current sensor belonging to each power circuit of each memory stick within the fault monitoring period, and the integration operation and the ratio processing with the corresponding time length of the fault monitoring period are performed in sequence to obtain the average current value of each power circuit of each memory stick within the fault monitoring period. The specific process is: extracting the current waveform curve of the current sensor belonging to each power circuit of each memory stick within the fault monitoring period from the current waveform curve of the current sensor Figure 3 The current waveform curve shown in the figure has a horizontal axis representing the current monitoring time point in seconds and a vertical axis representing the real-time current value in amperes. Figure 3 The current waveform curve shown reflects the relationship between the real-time current value change and the current monitoring time point change. By using the mathematical functions and statistical tools provided by the matrix laboratory software, a polynomial mathematical function is selected to obtain the current waveform curve function of the current sensor of each power circuit of each memory stick during the fault monitoring period, which reflects the relationship between the real-time current value change and the current monitoring time point change. Assume that the current waveform curve function of the current sensor of a power circuit of a certain memory stick during the fault monitoring period is , which represents the functional relationship between the real-time current value and the current monitoring time point, then the average current value of the power circuit of the memory module during the fault monitoring period can be obtained by the formula, where the formula is ,in is the end time point of the fault monitoring cycle, It is the starting time point of the fault monitoring cycle.

[0036] The highest position point of the current waveform curve of the current sensor belonging to each power circuit of each memory stick is located, marked as the maximum current value of each power circuit of each memory stick during the fault monitoring period, and ratio processing is performed with the average current value of each power circuit of each memory stick during the fault monitoring period to obtain the pulse factor of each power circuit of each memory stick during the fault monitoring period; the maximum current value of each power circuit of each memory stick during the fault monitoring period refers to marking the vertical coordinate data corresponding to the highest position point of the current waveform curve of the current sensor belonging to each power circuit of each memory stick as the maximum current value of each power circuit of each memory stick during the fault monitoring period.

[0037] The real-time current value corresponding to each current monitoring time point is extracted from the current waveform curve of the current sensor belonging to each power circuit of each memory stick, the number of current monitoring time points at which the real-time current value is less than the current limit value is counted, and the intermittent factor of each power circuit of each memory stick within the fault monitoring period is obtained by ratio processing with the total number of current monitoring time points in the current waveform curve, thereby obtaining the current abnormal fluctuation index of each power circuit of each memory stick through comprehensive analysis; the above-mentioned current monitoring time points are time points for monitoring the performance of the power circuit randomly arranged by the memory stick maintenance personnel within the fault detection period; the above-mentioned current limit value refers to the minimum value of the real-time current value for analysis, which is determined by the memory stick maintenance personnel based on historical conditions. If the real-time current value is less than the current limit value, it indicates that the power circuit at the current monitoring time point corresponding to the real-time current value is in an open circuit state.

[0038] S2. Collect voltage data of each estimated faulty power supply circuit of each estimated faulty memory stick, evaluate the abnormal loss coefficient of each estimated faulty power supply circuit of each estimated faulty memory stick, and compare it with the abnormal loss threshold, thereby locating each estimated faulty power supply circuit of each estimated faulty memory stick whose abnormal loss coefficient is greater than the abnormal loss threshold, and mark them as each faulty power supply circuit of each faulty memory stick.

[0039] It should be explained that the above-mentioned faulty power supply circuits marked as each faulty memory stick have the following specific process: comparing the abnormal loss coefficient of each estimated faulty power supply circuit of each estimated faulty memory stick with the abnormal loss threshold; if the abnormal loss coefficient of a certain estimated faulty power supply circuit of a certain estimated faulty memory stick is greater than the abnormal loss threshold, then the estimated faulty power supply circuit of the estimated faulty memory stick is recorded as the faulty power supply circuit of the faulty memory stick; thereby, the estimated faulty power supply circuits of each estimated faulty memory stick corresponding to the abnormal loss coefficient greater than the abnormal loss threshold are counted and recorded as the faulty power supply circuits of each faulty memory stick; wherein the abnormal The normal loss threshold represents the maximum value of the evaluated abnormal loss coefficient, which is set by the memory stick maintenance personnel based on historical situations. If the abnormal loss coefficient of a certain estimated fault power supply circuit of a certain estimated fault memory stick is greater than the abnormal loss threshold, it indicates that the estimated fault power supply circuit of the estimated fault memory stick is determined to have a fault, and further analysis is required to determine the fault type. If the abnormal loss coefficient of a certain estimated fault power supply circuit of a certain estimated fault memory stick is less than or equal to the abnormal loss threshold, it indicates that the failure risk of the estimated fault power supply circuit of the estimated fault memory stick is relatively light, and further analysis and maintenance are temporarily not required.

[0040] In a specific embodiment, the present invention analyzes the average temperature and equivalent operating resistance value of each faulty power circuit of each faulty memory stick during the fault monitoring period, thereby identifying the memory stick with an open short circuit fault, and specifically locates the fault point as the faulty power circuit in the memory slot area and actively performs overcurrent protection, which is helpful in guiding memory stick maintenance personnel to quickly locate and repair the fault, thereby improving the efficiency and accuracy of memory stick fault detection, while reducing the maintenance cost and time of the memory stick.

[0041] Specifically, the abnormal loss coefficient of each estimated fault power supply circuit of each estimated fault memory stick is evaluated, and the specific evaluation process is: according to the voltage data of each estimated fault power supply circuit of each estimated fault memory stick, the real-time voltage value corresponding to each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point is extracted, and the real-time current value of each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point is multiplied and averaged in sequence to obtain the average power of each estimated fault power supply circuit of each estimated fault memory stick during the fault monitoring period, and the average power consumption of each estimated fault power supply circuit of each estimated fault memory stick during the fault monitoring period is obtained at the same time. The corresponding real-time voltage value can be measured by a voltage sensor; the average power consumption of each estimated fault power supply circuit of each estimated fault memory stick during the fault monitoring period specifically refers to multiplying the corresponding real-time voltage value of each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point with the corresponding real-time current value to obtain the real-time power of each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point, averaging the real-time power of each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point to obtain the average power of each estimated fault power supply circuit of each estimated fault memory stick during the fault monitoring period, and then multiplying it with the duration corresponding to the fault monitoring period to obtain the average power consumption of each estimated fault power supply circuit of each estimated fault memory stick during the fault monitoring period.

[0042] According to the voltage data of each estimated fault power supply circuit of each estimated fault memory stick, the duration of each abnormal voltage in each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period is extracted, and the total duration of the abnormal voltage in each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period is accumulated; the duration of each abnormal voltage in each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period is automatically recorded by the data recording software supporting the voltage monitoring equipment, and the duration of each abnormal voltage event is calculated, thereby obtaining the duration of each abnormal voltage in each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period.

[0043] The durations of abnormal voltages of each estimated fault power circuit of each estimated fault memory stick within the fault monitoring period are sorted in order of time length, and the duration of abnormal voltage ranked first is extracted and recorded as the maximum duration of abnormal voltage of each estimated fault power circuit of each estimated fault memory stick within the fault monitoring period, and matched with the minimum voltage adjustment level corresponding to each maximum duration interval of abnormal voltage stored in the memory stick database, thereby obtaining the minimum voltage adjustment level of each estimated fault power circuit of each estimated fault memory stick within the fault monitoring period. The above minimum voltage adjustment level is determined by the memory stick maintenance personnel according to the memory stick. Performance formulation is used to quantify the ability of the memory stick to regulate abnormal voltage; the minimum voltage regulation level of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring cycle, and the specific matching process is: each abnormal voltage maximum duration interval corresponds to the minimum voltage regulation level, and the maximum duration of the abnormal voltage of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring cycle is matched with each abnormal voltage maximum duration interval, then the minimum voltage regulation level corresponding to the abnormal voltage maximum duration interval is the minimum voltage regulation level of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring cycle.

[0044] The abnormal loss coefficient of each estimated fault power circuit of each estimated fault memory stick is obtained by comprehensive analysis. In this embodiment, the coefficient is obtained by comprehensive analysis of the average power consumption, the total duration of abnormal voltage, and the minimum voltage adjustment level of each estimated fault power circuit of each estimated fault memory stick. The value used to evaluate the abnormal loss degree of each estimated fault power circuit of each estimated fault memory stick is specifically expressed as follows: ; in, is the abnormal loss coefficient of the kth estimated fault power circuit of the sth estimated fault memory stick. The minimum voltage regulation level is low, indicating that the voltage regulation ability of the estimated fault power circuit may be weak and the stability of the estimated fault power circuit cannot be effectively controlled. Therefore, the probability of increasing the total duration of the abnormal voltage increases, resulting in increased useless work, thereby increasing the average power consumption of the estimated fault circuit. By comprehensively analyzing the three related parameters, the faulty power circuit can be determined, thereby locating the faulty power circuits of each faulty memory stick. Therefore, timely and effective measures can be taken for the power circuit failure of the memory stick to reduce the impact of the power circuit failure of the memory stick on the business.

[0045] The reference power consumption is obtained from the historical work log of the memory bar, which represents the reference value for analyzing and estimating the average power consumption of the faulty power supply circuit.

[0046] It is the average power consumption of the kth estimated fault power supply circuit of the sth estimated fault memory stick during the fault monitoring cycle, representing the average amount of electrical energy consumed during the fault monitoring cycle, and is used to evaluate the working status of each estimated fault power supply circuit of each estimated fault memory stick.

[0047] It is the total duration of abnormal voltage in the kth estimated fault power supply circuit of the sth estimated fault memory bar during the fault monitoring cycle. It refers to the cumulative time that abnormal voltage occurs in the estimated fault power supply circuit during the fault monitoring cycle, reflecting the persistence of the voltage problem of the estimated fault power supply circuit.

[0048] It is the minimum voltage regulation level of the kth predicted fault power supply circuit of the sth predicted fault memory stick during the fault monitoring cycle, which represents the minimum regulation capability of the abnormal voltage of the predicted fault power supply circuit. If the minimum voltage regulation capability is small, it indicates that the predicted fault power supply circuit has certain limitations in regulating the abnormal voltage and may not be able to provide a sufficiently stable voltage output, thereby having a negative impact on the performance of the power supply circuit of the memory stick.

[0049] It is the correction factor corresponding to the average power consumption preset in the memory stick database, which represents the numerical value of the correction degree of the average power consumption change. The fitting curve corresponding to the average power consumption is obtained by fitting the relationship between the historical memory stick operating temperature, the historical memory stick usage frequency and the average power consumption. The fitting curve corresponding to the average power consumption is introduced into the fitting curve according to the real-time memory stick operating temperature and the memory stick usage frequency, thereby obtaining the correction factor corresponding to the average power consumption in this example. The value range of this numerical value in this example is 0 to 1.

[0050] It is the influence factor corresponding to the unit value of the total duration of abnormal voltage preset in the memory bar database, which represents the influence degree of the unit value of the total duration of abnormal voltage on the abnormal loss coefficient. The fitting curve corresponding to the total duration of abnormal voltage is obtained by fitting the relationship between the historical voltage fluctuation amplitude, the historical electromagnetic interference degree and the total duration of abnormal voltage. The fitting curve corresponding to the total duration of abnormal voltage is introduced into the fitting curve according to the real-time voltage fluctuation amplitude and the electromagnetic interference degree, thereby obtaining the influence factor corresponding to the unit value of the total duration of abnormal voltage in this example. The value range of this value in this example is 0 to 1.

[0051] It is the influence factor corresponding to the minimum voltage regulation level unit value preset in the memory stick database, which represents the influence degree of the minimum voltage regulation response level unit value on the abnormal loss coefficient. The fitting curve corresponding to the minimum voltage regulation response level is obtained by fitting the relationship between the historical capacitance size, the historical inductance size and the minimum voltage regulation response level, and the fitting curve corresponding to the minimum voltage regulation response level is brought into the fitting curve according to the real-time capacitance size and inductance size, thereby obtaining the influence factor corresponding to the minimum voltage regulation response level unit value in this example. The value range of this value in this example is 0 to 1.

[0052] s is the number of each estimated faulty memory bank, , j is the total number of estimated faulty memory bars, k is the number of each estimated faulty power supply circuit, , h is the total number of estimated faulty power circuits.

[0053] In this exemplary embodiment, a table showing changes in the abnormal loss coefficient of the kth estimated fault power circuit of the sth estimated fault memory module and its corresponding parameters is shown in Table 1: Table 1. Changes in abnormal loss coefficients and corresponding parameters of the kth estimated fault power circuit of the sth estimated fault memory module Average power consumption / Watt Total duration of abnormal voltage / second Minimum voltage regulation level / stage Abnormal loss coefficient / percentage 12.5 30 2 990 10.2 25 3 824 11.8 45 1 1443 9.5 35 4 1099 In this example embodiment, the value of the correction factor corresponding to the average power consumption is 0.6, the value of the influence factor corresponding to the unit value of the total duration of the abnormal voltage is 0.4, the value of the influence factor corresponding to the unit value of the minimum voltage adjustment level is 0.3, and the reference power consumption is set to 11 watts. It can be seen from Table 1 that with the increase of the average power consumption and the total duration of the abnormal voltage and the decrease of the minimum voltage adjustment level, the abnormal loss coefficient is constantly increasing. Therefore, the direction of change of the abnormal loss coefficient can be determined by paying attention to the changing trends of these parameters.

[0054] S3. Collect abnormal parameters of each faulty power supply circuit of each faulty memory stick, determine the fault type of each faulty power supply circuit of each faulty memory stick through the memory stick fault location system, and match and derive the fault protection method of each faulty power supply circuit of each faulty memory stick, thereby performing fault protection on each faulty power supply circuit of each faulty memory stick.

[0055] Specifically, the fault protection of each faulty power supply circuit of each faulty memory stick is performed, and the specific analysis process is: the fault type of each faulty power supply circuit of each faulty memory stick is determined by a memory stick fault locating system, wherein the above-mentioned memory stick fault locating system, in order to realize intelligent management and monitoring of memory stick failures, needs to know the influencing factors of memory stick failures in real time, so by constructing a memory stick fault locating system, the failure process of the memory stick can be fully known, making the fault management of the memory stick more efficient and accurate.

[0056] The short-circuit fault protection method corresponding to the short-circuit fault and the open-circuit fault protection method corresponding to the open-circuit fault preset in the memory stick database are matched in sequence, thereby obtaining the fault protection method corresponding to each faulty power supply circuit of each faulty memory stick, and finally implementing fault protection for each faulty power supply circuit of each faulty memory stick; further, the short-circuit fault protection method and the open-circuit fault protection method are formulated by the memory stick maintenance personnel according to the historical short-circuit maintenance situation and the open-circuit maintenance situation, and stored in the memory stick database; it needs to be further explained that if the memory stick fault location system determines that the fault of a certain faulty power supply circuit of a certain faulty memory stick is If the fault type is a short circuit fault, a short circuit fault protection method preset in the memory stick database is matched from the memory stick database, and the faulty power supply circuit actively overcurrents the faulty power supply circuit by receiving the parameters set in the short circuit fault protection method, including automatically disconnecting the faulty power supply circuit, etc. If the memory stick fault locating system determines that the fault type of a faulty power supply circuit of a faulty memory stick is an open circuit fault, an open circuit fault protection method preset in the memory stick database is matched from the memory stick database, and the faulty power supply circuit actively cuts off the circuit to protect the faulty power supply circuit by receiving the parameters set in the open circuit fault protection method, including automatically disconnecting the faulty power supply circuit, etc.

[0057] Specifically, the fault type of each faulty power supply circuit of each faulty memory stick is determined in the following specific determination process: the fault diagnosis index of each faulty power supply circuit of each faulty memory stick is compared with the fault diagnosis reference value; if the fault diagnosis index of a certain faulty power supply circuit is greater than the fault diagnosis reference value, the fault type corresponding to the faulty power supply circuit is marked as a short circuit fault; if the fault diagnosis index of a certain faulty power supply circuit is less than or equal to the fault diagnosis reference value, the fault type corresponding to the faulty power supply circuit is marked as an open circuit fault, thereby determining the fault type of each faulty power supply circuit of each faulty memory stick; the above-mentioned fault diagnosis reference value represents a reference value for determining the fault type of the faulty power supply circuit, which is formulated by the memory stick maintenance personnel based on the accumulated and sorted previous fault case data; if the above-mentioned fault diagnosis index of a certain faulty power supply circuit is greater than the fault diagnosis reference value, the fault type of the faulty power supply circuit is marked as an open circuit fault. The fault type corresponding to the circuit is marked as a short-circuit fault, which is a judgment basis based on the changing characteristics of the parameters in the fault diagnosis index. When it is a short-circuit fault, the growth range of the parameters in the fault diagnosis index is large, so the growth range of the fault diagnosis index is larger and greater than the fault diagnosis reference value. Therefore, the fault type corresponding to the fault power supply circuit whose fault diagnosis index is greater than the fault diagnosis reference value is marked as a short-circuit fault; similarly, if the fault diagnosis index of a fault power supply circuit is less than or equal to the fault diagnosis reference value, the fault type corresponding to the fault power supply circuit is marked as an open-circuit fault. When it is an open-circuit fault, the growth range of the parameters in the fault diagnosis index is small, so the growth range of the fault diagnosis index is also relatively small, less than or equal to the fault diagnosis reference value. Therefore, the fault type corresponding to the fault power supply circuit whose fault diagnosis index is less than or equal to the fault diagnosis reference value is marked as an open-circuit fault.

[0058] Furthermore, the fault diagnosis index of each faulty power supply circuit of each faulty memory stick has a specific analysis process as follows: according to the abnormal parameters of each faulty power supply circuit of each faulty memory stick, the average temperature of each faulty power supply circuit of each faulty memory stick within the fault monitoring period is extracted; it should be explained that the average temperature of each faulty power supply circuit of each faulty memory stick within the fault monitoring period refers to the real-time temperature of each temperature measurement point of each faulty power supply circuit of each faulty memory stick within the fault monitoring period measured by a temperature sensor, and then the average temperature of each faulty power supply circuit of each faulty memory stick within the fault monitoring period is obtained by averaging.

[0059] The average current and average voltage of each faulty power supply circuit of each faulty memory stick during the fault monitoring period are obtained, and the equivalent operating resistance value of each faulty power supply circuit of each faulty memory stick during the fault monitoring period is obtained by ratio processing. The average current and average voltage of each faulty power supply circuit of each faulty memory stick during the fault monitoring period can be measured and calculated by current sensors and voltage sensors installed in each faulty power supply circuit of each faulty memory stick, respectively.

[0060] Thus, the fault diagnosis index of each faulty power circuit of each faulty memory stick is obtained by comprehensive analysis. In this embodiment, the fault diagnosis index is obtained by comprehensive analysis of the average temperature and equivalent operating resistance value of each faulty power circuit of each faulty memory stick during the fault monitoring period. The value used to determine the fault type of each faulty power circuit of each faulty memory stick is specifically expressed as follows: ; in, is the fault diagnosis index of the rth fault power supply circuit of the dth faulty memory stick. When the fault of the power supply circuit is a short circuit type, the current in the circuit suddenly increases, causing the components in the power supply circuit to heat up rapidly, generating a large amount of heat, resulting in a higher average temperature of the power supply circuit. The short-circuit current tends to flow through a path with a smaller resistance, and the equivalent operating resistance value in the power supply circuit is smaller. When the fault of the power supply circuit is an open circuit type, the parameter changes are completely opposite to those of the short circuit type. Therefore, by expanding the influence of the average temperature, the ratio of the equivalent operating resistance value to the rated resistance value to analyze the fault diagnosis index, it can be seen that when the power supply circuit fault is a short circuit type, the fault diagnosis index will be greater than the fault diagnosis index when the power supply circuit fault is a short circuit type. Therefore, these three parameters are quantitatively analyzed to distinguish the fault type of the power supply circuit and provide strong support for timely repairing the fault of the memory stick.

[0061] is the average temperature of the rth faulty power supply circuit of the dth faulty memory stick during the fault monitoring period. The average temperature reflects different fault types of the faulty power supply circuit.

[0062] is the equivalent operating resistance value of the rth faulty power supply circuit of the dth faulty memory bar during the fault monitoring period. The size of the equivalent operating resistance value reflects different fault types of the faulty power supply circuit.

[0063] is the rated resistance value, extracted from the memory module specification sheet, and represents the reference value for analyzing the equivalent operating resistance value.

[0064] It is the influence factor corresponding to the average temperature unit value preset in the memory stick database, which represents the influence degree of the average temperature unit value on the fault diagnosis index. The fitting curve corresponding to the average temperature is obtained by fitting the relationship between the historical memory stick usage time, the historical memory stick operating frequency and the average temperature. The fitting curve corresponding to the average temperature is introduced into the fitting curve according to the real-time memory stick usage time and the memory stick operating frequency, thereby obtaining the influence factor corresponding to the average temperature unit value in this example. The value range of this value in this example is 0 to 1.

[0065] It is the correction factor corresponding to the equivalent operating resistance value preset in the memory stick database, which represents the numerical value of the degree of correction for the change of the equivalent operating resistance value. The fitting curve corresponding to the equivalent operating resistance value is obtained by fitting the relationship between the historical memory stick operating frequency, the historical memory stick remaining capacity and the equivalent operating resistance value. The fitting curve corresponding to the equivalent operating resistance value is brought into the fitting curve according to the real-time memory stick operating frequency and the memory stick remaining capacity, thereby obtaining the correction factor corresponding to the equivalent operating resistance value in this example. The value range of this value in this example is 0 to 1.

[0066] d is the number of each faulty memory module, , x is the total number of faulty memory bars, r is the number of each faulty power supply circuit, , c is the total number of faulty power circuits.

[0067] In this exemplary embodiment, the change table of the fault diagnosis index of the rth fault power supply circuit of the dth faulty memory module and its corresponding parameters is shown in Table 2: Table 2. Changes in the fault diagnosis index and its corresponding parameters of the rth fault power circuit of the dth faulty memory module serial number Average temperature / Celsius Equivalent operating resistance value / ohm Fault diagnosis index / percentage 1 80 0.2 5503324 2 30 1000 1899 3 85 0.15 23191006 4 36 1200 2513 In this example embodiment, the value of the influence factor corresponding to the average temperature unit value is 0.6, the value of the correction factor corresponding to the equivalent operating resistance value is 0.4, the rated resistance value is set to 100 ohms, and it is assumed that the fault diagnosis reference value is 300000. It can be clearly seen from Table 2 that the data corresponding to No. 1 and No. 3 are data under short circuit faults, and No. 2 and No. 4 are data under open circuit faults. The fault diagnosis index under open circuit faults is quite different from that under short circuit faults.

[0068] In a specific embodiment, the present invention provides a memory stick fault location protection method, device, medium and equipment, adds a high-precision current sensor to monitor the current state of each power circuit of each memory stick, cooperates with software to measure the power consumption of a single memory stick, accurately identifies each power circuit of each memory stick with potential faults, thereby locating each estimated faulty power circuit of each estimated faulty memory stick, and provides a basis for subsequent more detailed evaluation of the abnormal loss coefficient of each estimated faulty power circuit of the estimated faulty memory stick. Memory sticks with open and short circuit faults in the power circuit are identified, and the memory sticks can be fault protected, so that effective protection measures can be quickly taken to prevent the expansion of memory stick faults and ensure the stable operation of the memory stick.

[0069] The second aspect of the present invention provides a device for a memory stick fault location protection method, characterized in that it includes: a current sensor, a memory slot, a memory stick and a memory stick fault location system; the power input end of the memory slot area is adjacent to the current sensor; the current sensor is used to detect current faults in the power circuit of the memory stick; the memory stick fault location system determines the fault type of the power circuit of the memory stick; the current sensor is used to collect the real-time current value of each power circuit of each memory stick; the voltage sensor is used to measure the real-time voltage value corresponding to each estimated fault power circuit of each estimated fault memory stick at each current monitoring time point; the processor is used to analyze the real-time current value of each power circuit of each memory stick and the real-time voltage value corresponding to each estimated fault power circuit of each estimated fault memory stick at each current monitoring time point, thereby determining the fault type of each fault power circuit of each faulty memory stick through the memory stick fault location system, and implementing fault protection for each faulty power circuit of each faulty memory stick.

[0070] A third aspect of the present invention provides a computer-readable storage medium for storing a program, wherein the program, when executed by a processor, implements the method for locating and protecting a memory bar fault.

[0071] A fourth aspect of the present invention provides an electronic device, characterized in that the electronic device includes a memory for storing computer program instructions and a processor for executing program instructions, wherein when the computer program instructions are executed by the processor, the electronic device is triggered to execute the memory bar fault location protection method.

[0072] The above contents are merely examples and explanations of the structure of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the structure of the invention or exceed the scope defined by the present invention, they should all fall within the protection scope of the present invention.

Claims

1. A memory bar fault location protection method, characterized in that: include: S1. Based on the power input end of the memory slot area, perform current sampling operation on the current sensor of each memory bar adjacent to the power input end, thereby obtaining the current waveform curve of the current sensor belonging to each power circuit of each memory bar, analyzing the abnormal current fluctuation index of each power circuit of each memory bar, and comparing it with the abnormal current fluctuation threshold, thereby locating each power circuit of each memory bar whose abnormal current fluctuation index is greater than the abnormal current fluctuation threshold, and marking them as each estimated faulty power circuit of each estimated faulty memory bar; S2. Collect voltage data of each estimated faulty power circuit of each estimated faulty memory bar, evaluate the abnormal loss coefficient of each estimated faulty power circuit of each estimated faulty memory bar, and compare it with the abnormal loss threshold, thereby locating each estimated faulty power circuit of each estimated faulty memory bar whose abnormal loss coefficient is greater than the abnormal loss threshold, and marking them as each faulty power circuit of each faulty memory bar; S3. Collect abnormal parameters of each faulty power supply circuit of each faulty memory stick, determine the fault type of each faulty power supply circuit of each faulty memory stick through the memory stick fault location system, and match and derive the fault protection method of each faulty power supply circuit of each faulty memory stick, thereby performing fault protection on each faulty power supply circuit of each faulty memory stick.

2. A memory bar fault location protection method according to claim 1, characterized in that: The specific analysis process of analyzing the abnormal current fluctuation index of each power circuit of each memory module is as follows: Performing data processing on the current waveform curves of the current sensors of the power circuits of the memory sticks to obtain the current waveform curve functions of the current sensors of the power circuits of the memory sticks within the fault monitoring period, and sequentially performing integration operations and ratio processing with the duration corresponding to the fault monitoring period to obtain the average current value of the power circuits of the memory sticks within the fault monitoring period; Locate the highest position point of the current waveform curve of the current sensor belonging to each power circuit of each memory stick, mark it as the maximum current value of each power circuit of each memory stick during the fault monitoring period, and perform ratio processing with the average current value of each power circuit of each memory stick during the fault monitoring period to obtain the pulse factor of each power circuit of each memory stick during the fault monitoring period; The real-time current value corresponding to each current monitoring time point is extracted from the current waveform curve of the current sensor belonging to each power circuit of each memory stick, and the number of current monitoring time points at which the real-time current value is less than the current limit value is counted. The intermittent factor of each power circuit of each memory stick within the fault monitoring period is obtained by ratio processing with the total number of current monitoring time points in the current waveform curve, and the current abnormal fluctuation index of each power circuit of each memory stick is obtained through comprehensive analysis.

3. A memory bar fault location protection method according to claim 2, characterized in that: The abnormal current fluctuation index of each power circuit of each memory module is specifically expressed as: ； in, is the abnormal current fluctuation index of the bth power circuit of the ath memory bank, is the average current value of the bth power supply circuit of the ath memory bank during the fault monitoring cycle, is the intermittent factor of the bth power supply circuit of the ath memory bank during the fault monitoring cycle, is the pulse factor of the bth power supply circuit of the ath memory bank during the fault monitoring cycle, is the rated current value, It is the correction factor corresponding to the average current value preset in the memory bank database. The impact factor corresponding to the unit value of the intermittent factor preset in the memory bar database, is the impact factor corresponding to the pulse factor unit value preset in the memory bar database, a is the number of each memory bar, , b is the total number of memory bars, f is the number of each power circuit, , m is the total number of power circuits.

4. A memory bar fault location protection method according to claim 1, characterized in that: The abnormal loss coefficient of each estimated fault power circuit of each estimated faulty memory module is evaluated, and the specific evaluation process is as follows: According to the voltage data of each estimated fault power supply circuit of each estimated fault memory stick, extract the real-time voltage value corresponding to each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point, and perform product and average processing with the real-time current value of each estimated fault power supply circuit of each estimated fault memory stick at each current monitoring time point in sequence to obtain the average power of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period, and at the same time perform product processing with the duration corresponding to the fault monitoring period to obtain the average power consumption of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period; According to the voltage data of each estimated fault power circuit of each estimated fault memory bar, the duration of each abnormal voltage of each estimated fault power circuit of each estimated fault memory bar within the fault monitoring period is extracted, and the total duration of the abnormal voltage of each estimated fault power circuit of each estimated fault memory bar within the fault monitoring period is accumulated; The durations of abnormal voltages of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period are sorted in order of time length, and the first-ranked abnormal voltage duration is extracted and recorded as the maximum duration of abnormal voltage of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period, and matched with the minimum voltage regulation level corresponding to each abnormal voltage maximum duration interval stored in the memory stick database, thereby obtaining the minimum voltage regulation level of each estimated fault power supply circuit of each estimated fault memory stick within the fault monitoring period, and thus comprehensively analyzing and obtaining the abnormal loss coefficient of each estimated fault power supply circuit of each estimated fault memory stick.

5. The memory bar fault location protection method according to claim 1, characterized in that: The specific determination process of determining the fault type of each faulty power supply circuit of each faulty memory module is as follows: The fault diagnosis index of each faulty power supply circuit of each faulty memory stick is compared with the fault diagnosis reference value. If the fault diagnosis index of a faulty power supply circuit is greater than the fault diagnosis reference value, the fault type corresponding to the faulty power supply circuit is marked as a short circuit fault. If the fault diagnosis index of a faulty power supply circuit is less than or equal to the fault diagnosis reference value, the fault type corresponding to the faulty power supply circuit is marked as an open circuit fault. The fault type of each faulty power supply circuit of each faulty memory stick is determined accordingly.

6. A memory bar fault location protection method according to claim 5, characterized in that: The specific analysis process of the fault diagnosis index of each fault power circuit of each faulty memory module is as follows: Extracting the average temperature of each faulty power circuit of each faulty memory bar during a fault monitoring period according to the abnormal parameters of each faulty power circuit of each faulty memory bar; The average current and average voltage of each faulty power supply circuit of each faulty memory stick during the fault monitoring period are obtained, and the equivalent operating resistance value of each faulty power supply circuit of each faulty memory stick during the fault monitoring period is obtained by ratio processing, and the fault diagnosis index of each faulty power supply circuit of each faulty memory stick is obtained by comprehensive analysis.

7. A memory bar fault location protection method according to claim 6, characterized in that: The specific analysis process of performing fault protection on each faulty power supply circuit of each faulty memory module is as follows: The fault type of each faulty power supply circuit of each faulty memory stick is determined by the memory stick fault locating system, and matched in turn with the short-circuit fault protection method corresponding to the short-circuit fault and the open-circuit fault protection method corresponding to the open-circuit fault preset in the memory stick database, thereby obtaining the fault protection method corresponding to each faulty power supply circuit of each faulty memory stick, and finally implementing fault protection for each faulty power supply circuit of each faulty memory stick.

8. A device for a memory bar fault location protection method according to any one of claims 1 to 7, characterized in that: include: Current sensors, memory slots, memory modules and memory module fault location systems; The power input terminal of the memory slot area is adjacent to the current sensor; The current sensor is used to detect current faults in the power supply circuit of the memory stick; The memory bar fault location system determines the fault type of the power supply circuit of the memory bar; A current sensor, used to collect the real-time current value of each power circuit of each memory stick; A voltage sensor is used to measure the real-time voltage value corresponding to each estimated fault power circuit of each estimated faulty memory stick at each current monitoring time point; The processor is used to analyze the real-time current value of each power supply circuit of each memory stick and the real-time voltage value corresponding to each estimated faulty power supply circuit of each estimated faulty memory stick at each current monitoring time point, thereby determining the fault type of each faulty power supply circuit of each faulty memory stick through the memory stick fault locating system, and implementing fault protection for each faulty power supply circuit of each faulty memory stick.

9. A computer-readable storage medium for storing a program, wherein when the program is executed by a processor, the method for locating and protecting a memory bar fault according to any one of claims 1 to 7 is implemented.

10. An electronic device, characterized in that: The electronic device comprises a memory for storing computer program instructions and a processor for executing program instructions, wherein when the computer program instructions are executed by the processor, the electronic device is triggered to execute a memory bar fault location protection method according to any one of claims 1 to 7.

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