Substrate treatment method

Abstract

The purpose of the present invention is to provide a novel surface treatment method for a substrate having an antireflection film. This method for treating a substrate having an antireflection film comprises: a step for performing a treatment for smoothing at least a part of a region of the surface of the antireflection film; a step for forming a layer containing SiO2 on the surface of the antireflection film after the treatment for smoothing at least a part of the region of the surface of the antireflection film; and a step for applying a surface treatment agent to at least a part of the surface of the SiO2-containing layer to form a surface-treated layer.

Description

Technical Field

[0001] The present invention relates to a method for treating a substrate. Background Art

[0002] Various methods have been proposed as a method for treating a substrate having an antireflection film.

[0003] Patent Document 1 describes that a functional layer is provided on a glass substrate and the glass substrate is chemically strengthened by ion exchange, and describes a method of treating with oxygen plasma as one of the methods for activating the surface of the functional layer.

[0004] Patent Documents 2 and 3 describe that the surface of an antireflection film is treated with a fluorine-containing silane compound after the surface is treated with plasma.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application No. 2017-528411

[0008] Patent Document 2: China Publication No. 112267093

[0009] Patent Document 3: International Publication No. 3033 / 014566 Summary of the invention

[0010] Problems to be solved by the invention

[0011] An object of the present invention is to provide a novel surface treatment method for a substrate having an antireflection film.

[0012] Technical solutions to solve problems

[0013] The present invention provides the following embodiments.

[0014] [1] A method for treating a substrate having an anti-reflection film, comprising:

[0015] A step of performing a treatment to smooth at least a portion of a surface of the anti-reflection film;

[0016] A step of forming a layer containing SiO2 on the surface of the anti-reflection film after the above-mentioned treatment to smooth at least a part of the surface of the anti-reflection film; and

[0017] A step of applying a surface treatment agent to at least a portion of the surface of the layer containing SiO2 to form a surface treatment layer.

[0018] [2] The processing method as described in [1], wherein:

[0019] The arithmetic mean roughness Ra1 of the surface of the SiO 2 -containing layer is 60% or less of the arithmetic mean roughness Ra0 of the surface of the antireflection film.

[0020] [3] The processing method as described in [1], wherein:

[0021] The above-mentioned treatment for smoothing at least a part of the surface of the antireflection film is an ion cleaning treatment.

[0022] [4] The processing method as described in [1], wherein:

[0023] The above-mentioned treatment of smoothing at least a part of the surface of the anti-reflection film and the formation of the layer containing SiO2 are implemented in the following manner:

[0024] The amount C1 of OH groups on the surface of the SiO2-containing layer is set to be 1.4 times or more the amount C0 of OH groups on the surface of the antireflection film before the treatment for smoothing at least a portion of the surface of the antireflection film.

[0025] [5] The processing method as described in [1], wherein:

[0026] The above-mentioned treatment of smoothing at least a part of the surface of the anti-reflection film is performed by irradiating plasma.

[0027] The voltage during the plasma irradiation is 140V or more.

[0028] [6] The processing method as described in [1], wherein:

[0029] The above-mentioned treatment of smoothing at least a part of the surface of the anti-reflection film is performed by irradiating plasma.

[0030] The gas flow rate during the plasma irradiation is 40 sccm or more.

[0031] [7] The processing method as described in [1], wherein:

[0032] The above-mentioned treatment of smoothing at least a part of the surface of the anti-reflection film is performed by irradiating plasma.

[0033] The current during the plasma irradiation is 0.3 A or more.

[0034] [8] The processing method as described in [1], wherein:

[0035] The above-mentioned treatment of smoothing at least a part of the surface of the anti-reflection film is performed by irradiating plasma.

[0036] The plasma irradiation time during the above plasma irradiation is 100 to 700 seconds.

[0037] [9] The processing method as described in [1], wherein:

[0038] The above-mentioned layer containing SiO2 is formed by vapor deposition.

[0039]

[10] The treatment method according to any one of [1] to [9], wherein:

[0040] The surface treatment agent contains a fluorine-containing silane compound.

[0041]

[11] The processing method as described in

[10] , wherein:

[0042] The fluorine-containing silane compound includes at least one fluorine-containing silane compound represented by the following formula (1) or (2):

[0043] R F1 α -X A -R Si β (1)

[0044] R Si γ -X A -R F2 -X A -R Si γ (2)

[0045] [In formulas (1) and (2):

[0046] R F1 Rf is independently 1 -R F -O q - or fluorinated alkyl;

[0047] R F2 Rf 2 p -R F -O q - or fluoroalkylene;

[0048] R 1 Each occurrence is independently C which may be substituted with one or more fluorine atoms 1－16 alkyl;

[0049] R 2 C may be substituted with one or more fluorine atoms 1－6 Alkylene;

[0050] R F Each occurrence is independently a divalent fluoropolyether group;

[0051] p is 0 or 1;

[0052] q is independently 0 or 1 at each occurrence;

[0053] R Si Each occurrence is independently a monovalent group containing a Si atom to which a hydroxyl group, a hydrolyzable group, a hydrogen atom or a monovalent organic group is bonded;

[0054] At least 1 R Si It is a monovalent group containing a Si atom to which a hydroxyl group or a hydrolyzable group is bonded;

[0055] X A Each is independently a single bond or a 2- to 10-valent organic group;

[0056] α is an integer from 1 to 9;

[0057] β is an integer from 1 to 9;

[0058] γ is each independently an integer of 1 to 9. ].

[0059] Effects of the Invention

[0060] The present invention can provide a novel surface treatment method for a substrate having an antireflection film. DETAILED DESCRIPTION

[0061] The processing method of the present invention is a processing method for a substrate having an anti-reflection film, comprising:

[0062] A step of performing a treatment to smooth at least a portion of a surface of the anti-reflection film;

[0063] A step of forming a layer containing SiO2 on the surface of the anti-reflection film after the above-mentioned treatment to smooth at least a part of the surface of the anti-reflection film; and

[0064] A step of applying a surface treatment agent to at least a portion of the surface of the layer containing SiO2 to form a surface treatment layer,

[0065] The surface treatment agent contains a fluorine-containing silane compound.

[0066] According to the present invention, a novel surface treatment method for a substrate having an antireflection film can be provided.

[0067] In a typical anti-reflection film, a plurality of layers with different refractive indices are stacked to form a film, and the surface is sometimes rough and has poor wear resistance. In addition, the layer constituting the anti-reflection film does not necessarily have good reactivity with the silane compound, and the surface treatment layer formed on the anti-reflection film sometimes has poor durability. In a preferred embodiment, according to the treatment method of the present invention, in a substrate having an anti-reflection film, the transparency of the substrate, the durability of the surface treatment layer, and especially good wear resistance can be maintained. The present invention is not limited to a specific theoretical explanation, but the reason why the treatment method of the present invention can achieve this effect is speculated as follows.

[0068] That is, in the treatment method of the present invention, after the surface of the anti-reflection film is smoothed, a layer containing SiO2 is further formed. According to the research of the present inventors, it is found that by using this treatment, the surface of the anti-reflection film can be flattened and the amount of OH groups on the surface of the anti-reflection film can be increased. As a result, when a surface treatment agent is applied to the surface of the layer containing SiO2, a uniform and dense surface treatment layer can be obtained, which is excellent in durability, especially wear resistance.

[0069] The treatment method of the present invention can be applied to a substrate having an antireflection film. The antireflection film can suppress reflection of light incident from the surface of the antireflection film.

[0070] A typical anti-reflection film may contain two or more layers having different refractive indices. By containing two or more layers having different refractive indices, incident light can be reflected at the interface of the two layers having different refractive indices, and the reflection of incident light can be suppressed as a whole by making the reflected light from different interfaces cancel each other out.

[0071] The antireflection film preferably contains one selected from the group consisting of metals, alloys, metal oxides, metal nitrides, metal sulfides, and metal fluorides, and more preferably contains one selected from the group consisting of metals, metal oxides, and metal nitrides.

[0072] Examples of the metal include Al, Au, Ag, Cu, Fe, Zn, Cr and Ni, preferably Al, Au, Ag and Cu. Examples of the alloy include alloys containing the metals, specifically, SUS and brass. Examples of the metal oxide include SiO2, TiO2, Al2O3, ZrO2, Nb2O5, CeO2, HfO2, Ta2O5 and ZrTiO3. Examples of the metal nitride include Si3N4, AlN, SiN and SiAlN. Examples of the metal sulfide include ZnS. Examples of the metal fluoride include MgF2 and CeF3.

[0073] The antireflection film preferably includes a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index.

[0074] The refractive index of the high refractive index layer may be preferably 1.7 or more, more preferably 1.7 or more and 2.8 or less, and even more preferably 1.8 or more and 2.6 or less, based on light of a wavelength of 550 nm.

[0075] The refractive index of the low refractive index layer may preferably be less than 1.7, more preferably 1.2 to 1.65, and even more preferably 1.2 to 1.6, based on light of a wavelength of 550 nm.

[0076] The refractive index difference between the high refractive index layer and the low refractive index layer may preferably be 0.5 or more and 1.5 or less, and more preferably 0.7 or more and 1.2 or less.

[0077] In a preferred embodiment, the anti-reflection film is preferably a laminated body in which the high refractive index layer and the low refractive index layer are alternately laminated. The total number of layers of the high refractive index layer and the low refractive index layer in the anti-reflection film can be preferably more than 3 layers and less than 10 layers, more preferably more than 5 layers and less than 8 layers. The outermost layer of the anti-reflection film can be any of the high refractive index layer and the low refractive index layer, preferably the low refractive index layer.

[0078] The arithmetic mean roughness Ra0 of the surface of the anti-reflection film may preferably be 1 nm or more and 50 nm or less, more preferably 2 nm or more and 30 nm or less, and even more preferably 3 nm or more and 10 nm or less. In the present invention, the arithmetic mean roughness can be measured with reference to JISB 0601. In one embodiment, the arithmetic mean roughness Ra0 of the surface of the anti-reflection film may be the arithmetic mean roughness of the surface of the anti-reflection film before a process is performed to smooth at least a portion of the surface of the anti-reflection film.

[0079] The substrate may be a transparent substrate, which may be a resin substrate or a glass substrate, and is preferably a glass substrate.

[0080] Examples of the glass constituting the glass substrate include sapphire glass, soda-lime glass, alkali aluminosilicate glass, borosilicate glass, alkali-free glass, crystal glass, and quartz glass. These glasses may be chemically strengthened, but are not limited thereto. More preferred examples of the glass constituting the glass substrate include chemically strengthened soda-lime glass, chemically strengthened alkali aluminosilicate glass, and chemically strengthened borosilicate glass.

[0081] The thickness of the glass substrate can typically be between 0.1 mm and 1 mm.

[0082] Examples of the resin constituting the resin substrate include, but are not limited to, polyester resins, acrylic resins, polyolefin resins, polycarbonate resins, polyethersulfone resins, polyarylate resins, polyamide resins, polyimide resins, cellulose resins, and polystyrene resins.

[0083] The thickness of the resin substrate can typically be 0.1 mm to 1 mm.

[0084] In the treatment method of the present invention, in a substrate having an anti-reflection film, a treatment is performed to smooth at least a portion of the surface of the anti-reflection film (hereinafter referred to as "surface smoothing treatment"). The surface smoothing treatment can be any treatment that can improve the smoothness of the surface before and after the treatment. Examples of the surface smoothing treatment include ion cleaning treatment, flame treatment, and UV ozone treatment, and ion cleaning treatment is preferred. The ion cleaning treatment can remove the remaining ions present on the surface of the anti-reflection film.

[0085] Examples of the ion cleaning treatment include corona treatment, plasma treatment, flame treatment, and glow treatment, and plasma treatment is preferred.

[0086] The above-mentioned plasma treatment can be typically performed by irradiating plasma.

[0087] Examples of the plasma include vacuum plasmas such as microwave plasma and high frequency plasma, and atmospheric pressure plasma, preferably atmospheric pressure plasma. In addition, examples of processing gases for generating plasma include oxygen, nitrogen, fluorine, hydrogen, argon, and air, preferably oxygen and / or argon.

[0088] The voltage during plasma irradiation is preferably 100 V or more, more preferably 120 V or more and 240 V or less, even more preferably 140 V or more and 220 V or less, and particularly preferably 150 V or more and 180 V or less. By setting the voltage during plasma irradiation within this range, the surface of the antireflection film can be made smoother.

[0089] The gas flow rate during plasma irradiation is preferably 10 sccm or more, more preferably 20 sccm or more and 100 sccm or less, more preferably 30 sccm or more and 80 sccm or less, and particularly preferably 40 sccm or more and 60 sccm or less. By setting the gas flow rate during plasma irradiation within this range, the surface of the anti-reflection film can be made smoother.

[0090] The current during plasma irradiation is preferably 0.3 A or more, more preferably 0.5 A or more and 10 A or less, even more preferably 1 A or more and 8 A or less, and particularly preferably 3 A or more and 6 A or less. By setting the current during plasma irradiation within this range, the surface of the antireflection film can be made smoother.

[0091] The plasma irradiation time is preferably 100 to 1,000 seconds, more preferably 100 to 700 seconds. By setting the plasma irradiation time within this range, the surface of the antireflection film can be made smoother while maintaining the transparency of the substrate more easily.

[0092] In one embodiment, when ion cleaning is performed by plasma irradiation using Ar as a processing gas, the plasma irradiation time during the plasma irradiation is preferably 100 seconds to 700 seconds. By making the plasma irradiation time within this range, the surface of the anti-reflection film can be made smoother while maintaining the transparency of the substrate more easily.

[0093] In one embodiment, when ion cleaning is performed by plasma irradiation using O2 as a processing gas, the plasma irradiation time during the plasma irradiation is preferably 100 seconds to 800 seconds, more preferably 180 seconds to 600 seconds. By setting the plasma irradiation time within this range, the surface of the anti-reflection film can be made smoother while maintaining the transparency of the substrate more easily.

[0094] The plasma irradiation is preferably carried out at an irradiation distance of 1 mm to 300 mm, more preferably 1.5 mm to 200 mm, and even more preferably 2 mm to 100 mm. The irradiation distance is preferably 1 mm to 1 mm, more preferably 1.5 mm to 2 mm, more preferably 2 mm to 300 mm, more preferably 200 mm to 200 mm, and even more preferably 100 mm to 100 mm. By irradiating the plasma at this irradiation distance, the surface of the display panel can be made suitable for the formation of the surface treatment layer while maintaining the function of the electronic device.

[0095] In the present invention, the irradiation distance may be a straight-line distance from the emission position of plasma to the irradiation target.

[0096] A layer containing SiO2 is formed on the surface of the antireflection film after the surface smoothing treatment. By forming the layer containing SiO2, the adhesion with the surface treatment agent becomes good.

[0097] In the above-mentioned SiO 2 -containing layer, the content of SiO 2 is preferably 80 mass % to 100 mass %, more preferably 90 mass % to 100 mass %, and even more preferably 95 mass % to 100 mass %.

[0098] The above-mentioned layer containing SiO2 may contain other metal oxides in addition to SiO2. As the metal oxide, Al2O3, TiO2, etc. may be cited. In addition, the above-mentioned layer containing SiO2 may contain at least one composite oxide selected from the 4th, 5th, and 13th families of the periodic table.

[0099] The above-mentioned layer containing SiO2 can be formed by a liquid phase method and a gas phase method, but is not limited thereto. As the above-mentioned liquid phase method, a sol-gel method, a liquid phase precipitation method, a coprecipitation method, etc. can be listed, but are not limited thereto. As the above-mentioned gas phase method, a sputtering method, a vapor deposition method, etc. can be listed, but are not limited thereto. In one embodiment, the layer containing SiO2 is preferably formed by a gas phase method, and is more preferably formed by a vapor deposition method.

[0100] The above-mentioned vapor deposition method may be a physical vapor deposition method or a chemical vapor deposition method, and the physical vapor deposition method is preferred. Examples of the above-mentioned physical vapor deposition method include sputtering, ion-assisted deposition, and vacuum vapor deposition, and the ion-assisted deposition method is preferred.

[0101] In the physical vapor deposition method, a typical method is to physically evaporate the vapor deposition source and deposit it on the vapor deposition object to obtain a film (layer). The vaporization of the vapor deposition source is typically performed by irradiating the vapor deposition source with electron beams (EB irradiation).

[0102] The acceleration voltage during the electron beam irradiation is preferably 700 V to 1,500 V, more preferably 800 V to 1,300 V, and even more preferably 900 V to 1,200 V. The acceleration current during the electron beam irradiation is preferably 200 mA to 800 mA, more preferably 300 mA to 700 mA, and even more preferably 400 mA to 600 mA.

[0103] As the above-mentioned evaporation source, metal oxides containing SiO2 can be cited. In addition to containing SiO2, the metal oxide may also contain Al2O3, TiO2, etc. The content of SiO2 in the above-mentioned evaporation source is preferably 80 mass% to 100 mass%, more preferably 90 mass% to 100 mass%, and particularly preferably 95 mass% to 100 mass%.

[0104] During the vapor deposition, the vapor deposition source may be heated, and the temperature of the vapor deposition source is preferably 600° C. to 1,400° C., more preferably 700° C. to 1,300° C., and even more preferably 800° C. to 1,200° C.

[0105] The above-mentioned vapor deposition can be carried out under vacuum. The pressure during the vapor deposition is preferably 1.0×10 -4 Pa above 1.0×10 -1 Pa or less, more preferably 1.0×10 -3 Pa above 5.0×10 -2 Pa or less, more preferably 1.0×10 -2 Pa above 3.0×10 -2 Below Pa.

[0106] In one embodiment, the above-mentioned evaporation can be carried out in the presence of an ion-assisted gas. By the presence of an ion-assisted gas, the obtained film has better adhesion and film-forming properties for an anti-reflection film (i.e., an anti-reflection film after surface smoothing treatment). As the above-mentioned ion-assisted gas, O2 gas can be cited.

[0107] The flow rate of the ion assist gas is preferably 20 sccm to 80 sccm, more preferably 30 sccm to 70 sccm, and even more preferably 40 sccm to 60 sccm.

[0108] The surface smoothing treatment and the formation of the SiO2-containing layer may be carried out in such a manner that the arithmetic mean roughness Ra1 of the surface of the SiO2-containing layer is preferably 0.1 nm to 5 nm, more preferably 0.5 nm to 4 nm, and even more preferably 1 nm to 3 nm.

[0109] When the above-mentioned surface smoothing treatment and the formation of the layer containing SiO2 are carried out, the arithmetic mean roughness Ra1 of the surface of the layer containing SiO2 is preferably 50% or less, more preferably 20% or less, even more preferably 10% or less, for example, 0.2% or more, relative to the arithmetic mean roughness Ra0 of the anti-reflection film before the above-mentioned surface smoothing treatment.

[0110] When the surface smoothing treatment and the formation of the layer containing SiO2 are performed, the amount of OH groups C1 on the surface of the layer containing SiO2 is preferably 1.1 times or more, more preferably 1.4 times or more, more preferably 2 times or more, particularly preferably 2.5 times or more, for example, 10 times or less, relative to the amount of OH groups C0 on the surface of the antireflection film before the surface smoothing treatment. In the present invention, the amount of OH groups can be measured by TOF-SIMS.

[0111] The thickness of the layer containing SiO2 is preferably between 0.1nm and 10nm, more preferably between 1nm and 6nm. By making the thickness of the layer containing SiO2 within this range, it is possible to improve the smoothness of the surface while ensuring the amount of OH groups, and it is easier to maintain the transparency of the substrate.

[0112] In one embodiment, when ion cleaning is performed by plasma irradiation using Ar as a processing gas, the thickness of the layer containing SiO2 is preferably 0.1 nm to 10 nm, and more preferably 1 nm to 6 nm. By making the thickness of the layer containing SiO2 within this range, the smoothness of the surface can be improved while ensuring the amount of OH groups, and it is easier to maintain the transparency of the substrate.

[0113] In another embodiment, when ion cleaning is performed by plasma irradiation using O2 as a processing gas, the thickness of the layer containing SiO2 is preferably 0.1 nm to 6 nm, and more preferably 1 nm to 3 nm. By making the thickness of the layer containing SiO2 within this range, the smoothness of the surface can be improved while ensuring the amount of OH groups, and it is easier to maintain the transparency of the substrate.

[0114] A surface treatment agent is applied to at least a portion of the surface of the layer containing SiO2 to form a surface treatment layer, thereby imparting one or more properties selected from water repellency, oil repellency, slippage, fingerprint adhesion, antifouling, antireflection and antifogging.

[0115] The application of the surface treatment agent can be implemented by applying the surface treatment agent to the surface of the display panel in a manner of covering the surface. The covering method is not particularly limited. For example, a wet covering method and a dry covering method can be used, and a wet covering method is preferred.

[0116] As examples of the wet coating method, there can be cited dip coating, spin coating, brush coating, flow coating, spray coating, roll coating, gravure coating and the like, with spray coating being preferred.

[0117] The layer formation of the surface treatment agent is preferably carried out in a manner that the surface treatment agent of the present invention and a catalyst for hydrolysis and dehydration condensation coexist in the layer. For simplicity, when a wet coating method is used, the catalyst can be added to the dilution of the surface treatment agent of the present invention after the surface treatment agent of the present invention is diluted with a solvent and before being applied to the substrate surface.

[0118] Any appropriate acid or base can be used as the catalyst. As the acid catalyst, for example, acetic acid, formic acid, trifluoroacetic acid, etc. can be used. In addition, as the base catalyst, for example, ammonia, organic amines, etc. can be used.

[0119] After applying the surface treatment agent, drying may be performed as necessary. By this drying, the hydrolysis and dehydration condensation of the fluorine-containing silane compound described later are promoted, and the solvent and the like can be removed.

[0120] The drying of the above-mentioned precursor layer is preferably carried out at a temperature of 0°C to 60°C, more preferably 5°C to 50°C, and even more preferably 10°C to 30°C, and is preferably carried out for 1 hour to 48 hours, more preferably 3 hours to 24 hours, and even more preferably 6 hours to 12 hours.

[0121] The thickness of the surface treatment layer is not particularly limited, but is preferably in the range of 1 to 50 nm, 1 to 30 nm, and preferably 1 to 15 nm in terms of optical performance, wear resistance, and antifouling properties.

[0122] The surface treatment agent preferably contains a fluorine-containing silane compound.

[0123] The fluorine-containing silane compound is a compound containing at least a fluorine-containing group and silane, and preferably contains at least one fluorine-containing silane compound represented by the following formula (1) or (2).

[0124] R F1 α -X A -R Si β (1)

[0125] R Si γ -X A -R F2 -X A -R Si γ (2)

[0126] [Where:

[0127] R F1 Rf is independently 1 -R F -O q -;

[0128] R F2 Rf 2 p -R F -O q -;

[0129] R 1 Each occurrence is independently C which may be substituted with one or more fluorine atoms 1－16 alkyl;

[0130] R2 C may be substituted with one or more fluorine atoms 1－6 Alkylene;

[0131] R F Each occurrence is independently a divalent fluoropolyether group;

[0132] p is 0 or 1;

[0133] q is independently 0 or 1 at each occurrence;

[0134] R Si Each occurrence is independently a monovalent group containing a Si atom to which a hydroxyl group, a hydrolyzable group, a hydrogen atom or a monovalent organic group is bonded;

[0135] At least 1 R Si It is a monovalent group containing a Si atom to which a hydroxyl group or a hydrolyzable group is bonded;

[0136] X A Each is independently a single bond or a 2- to 10-valent organic group;

[0137] α is an integer from 1 to 9;

[0138] β is an integer from 1 to 9;

[0139] γ is each independently an integer of 1 to 9. ].

[0140] In the above formula (1), R F1 Rf is independently 1 -R F -O q - or fluoroalkyl. In one embodiment, R F1 Preferably Rf 1 -R F -O q -, in another embodiment, R F1 Preferably it is a fluorinated alkyl group. F1 Rf 1 -R F -O q In the case of -, the compound represented by formula (1) contains a fluorinated polyether group and belongs to a fluorinated polyether group-containing silane compound.

[0141] In the above formula (2), R F2 Rf 2 p -R F -O q - or fluoroalkylene. In one embodiment, R F2 Preferably Rf 2 p -RF -O q -, in another embodiment, R F2 Preferably it is a fluorinated alkylene group. F2 Rf 2 p -R F -O q In the case of -, the compound represented by formula (2) contains a fluorinated polyether group and belongs to a fluorinated polyether group-containing silane compound.

[0142] In the above formula, Rf 1 Each occurrence is independently C which may be substituted with one or more fluorine atoms 1－16 alkyl.

[0143] The above C which may be substituted with one or more fluorine atoms 1－16 The "C" in the alkyl 1－16 The "alkyl" may be a straight chain or a branched chain, preferably a straight chain or a branched chain C 1－6 Alkyl groups, especially C 1－3 Alkyl, more preferably a straight chain C 1－6 Alkyl groups, especially C 1－3 alkyl.

[0144] The above Rf 1 Preferably, C 1－16 Alkyl, more preferably CF2H-C 1－15 Perfluoroalkylene, more preferably C 1－16 Perfluoroalkyl.

[0145] C 1－16 The perfluoroalkyl group may be a straight chain or a branched chain, preferably a straight chain or a branched chain C 1－6 Perfluoroalkyl, especially C 1－3 Perfluoroalkyl, more preferably linear C 1－6 Perfluoroalkyl, especially C 1－3 The perfluoroalkyl group is specifically -CF3, -CF2CF3, or -CF2CF2CF3.

[0146] In the above formula, Rf 2 C may be substituted with one or more fluorine atoms 1－6 Alkylene.

[0147] The above C which may be substituted with one or more fluorine atoms 1－6 The "C" in the alkylene 1－6 The "alkylene" may be a straight chain or a branched chain, preferably a straight chain or a branched chain C 1－3 Alkylene, more preferably a straight chain C 1－3 Alkylene.

[0148] The above Rf 2 Preferably, C 1－6 Alkylene, more preferably C 1－6 Perfluoroalkylene, more preferably C 1－3 Perfluoroalkylene.

[0149] C 1－6 The perfluoroalkylene group may be a straight chain or a branched chain, preferably a straight chain or a branched chain C 1－3 Perfluoroalkylene, more preferably linear C 1－3 The perfluoroalkylene group is specifically -CF2-, -CF2CF2-, or -CF2CF2CF2-.

[0150] In the above formula, p is 0 or 1. In one embodiment, p is 0. In another embodiment, p is 1.

[0151] In the above formula, q is independently at each occurrence 0 or 1. In one embodiment, q is 0. In another embodiment, q is 1.

[0152] In the above formulas (1) and (2), R F Each occurrence is independently a divalent fluorinated polyether group.

[0153] R F Preferably, the following groups may be contained:

[0154] -(OC h1 R Fa 2h1 ) h3 -(OC h2 R Fa 2h2－2 ) h4 -

[0155] [Where:

[0156] R Fa is independently a hydrogen atom, a fluorine atom or a chlorine atom at each occurrence,

[0157] h1 is an integer from 1 to 6,

[0158] h2 is an integer from 4 to 8,

[0159] h3 is an integer greater than 0,

[0160] h4 is an integer greater than 0,

[0161] The total of h3 and h4 is 1 or more, preferably 2 or more, and more preferably 5 or more, and the order of existence of each repeating unit marked with h3 and h4 and enclosed in parentheses in the formula is arbitrary.]

[0162] In one embodiment, R F It is straight chain or branched chain. F Preferably, it is a group represented by the following formula:

[0163] -(OC6F 12 ) a -(OC5F 10 ) b -(OC4F8) c -(OC3R Fa 6) d -(OC2F4) e -(OCF2) f -

[0164] [Where:

[0165] R Fa is independently a hydrogen atom, a fluorine atom or a chlorine atom at each occurrence,

[0166] a, b, c, d, e and f are each independently an integer of 0 to 200, and the sum of a, b, c, d, e and f is 1 or more. The order of existence of each repeating unit marked with a, b, c, d, e or f and enclosed in parentheses in the formula is arbitrary. Fa When it is a hydrogen atom or a chlorine atom, at least one of a, b, c, e and f is 1 or more. ].

[0167] R Fa Preferably, it is a hydrogen atom or a fluorine atom, and more preferably, it is a fluorine atom. Fa When it is a hydrogen atom or a chlorine atom, at least one of a, b, c, e and f is 1 or more.

[0168] It is preferred that a, b, c, d, e and f are each independently an integer of 0 to 100.

[0169] The sum of a, b, c, d, e and f is preferably 5 or more, more preferably 10 or more, for example, 15 or more or 20 or more. The sum of a, b, c, d, e and f is preferably 200 or less, more preferably 100 or less, further preferably 60 or less, for example, 50 or less or 30 or less.

[0170] These repeating units can be straight chain, branched chain, or contain ring structures. 12)- can be -(OCF2CF2CF2CF2CF2CF2)-, -(OCF(CF3)CF2CF2CF2CF2)-, -(OCF2CF(CF3)CF2CF2CF2)-, -(OCF2CF2CF(CF3)CF2CF2)-, -(OCF2CF2CF2CF(CF3)CF2)-, -(OCF2CF2CF2CF2CF(CF3))-, etc. -(OC5F 10 )- may be -(OCF2CF2CF2CF2CF2)-, -(OCF(CF3)CF2CF2CF2)-, -(OCF2CF(CF3)CF2CF2)-, -(OCF2CF2CF(CF3)CF2)-, -(OCF2CF2CF2CF(CF3))-, etc. -(OC4F8)- may be any of -(OCF2CF2CF2CF2)-, -(OCF(CF3)CF2CF2)-, -(OCF2CF(CF3)CF2)-, -(OCF2CF2CF(CF3))-, -(OC(CF3)2CF2)-, -(OCF2C(CF3)2)-, -(OCF(CF3)CF(CF3))-, -(OCF(C2F5)CF2)-, and -(OCF2CF(C2F5))-. -(OC3F6)-(i.e., R Fa is a fluorine atom) may be any of -(OCF2CF2CF2)-, -(OCF(CF3)CF2)- and -(OCF2CF(CF3))-. -(OC2F4)- may be any of -(OCF2CF2)- and -(OCF(CF3))-.

[0171] In one embodiment, the repeating unit is linear. When the repeating unit is linear, the surface slip property and wear durability of the surface treatment layer can be improved.

[0172] In one embodiment, the repeating unit is branched. By making the repeating unit branched, the dynamic friction coefficient of the surface treatment layer can be increased.

[0173] In one embodiment, R F May contain ring structures.

[0174] The ring structure may be a three-membered ring, a four-membered ring, a five-membered ring or a six-membered ring.

[0175]

[0176] [Wherein, * represents the bonding position.]

[0177] The ring structure is preferably a four-membered ring, a five-membered ring or a six-membered ring, and more preferably a four-membered ring or a six-membered ring.

[0178] The repeating unit having a ring structure is preferably the following unit.

[0179]

[0180] [Wherein, * represents the bonding position.]

[0181] In one embodiment, the repeating unit is linear. When the repeating unit is linear, the surface slip property and wear durability of the surface treatment layer can be improved.

[0182] In one embodiment, the repeating unit is branched. By making the repeating unit branched, the dynamic friction coefficient of the surface treatment layer can be increased.

[0183] In one embodiment, R F Each occurrence thereof is independently a group represented by any one of the following formulae (f1) to (f6).

[0184] -(OC3F6) d -(OC2F4) e - (f1)

[0185] [Wherein, d is an integer from 1 to 200, and e is 0 or 1. ];

[0186] -(OC4F8) c -(OC3F6) d -(OC2F4) e -(OCF2) f -(f2)

[0187] [wherein, c and d are each independently an integer from 0 to 30, e and f are each independently an integer from 1 to 200,

[0188] The sum of c, d, e and f is greater than 2,

[0189] The order of presence of the repeating units marked with the subscript c, d, e or f and enclosed in brackets in the formula is arbitrary. ];

[0190] -(R 6 -R 7 ) g - (f3)

[0191] [Where R 6 For OCF2 or OC2F4,

[0192] R 7is selected from OC2F4, OC3F6, OC4F8, OC5F 10 and OC6F 12 or a combination of 2 or 3 groups independently selected from these groups,

[0193] g is an integer from 2 to 100. ];

[0194] -(R 6 -R 7 ) g -R r -(R 7’ -R 6’ ) g’ - (f4)

[0195] [Where R 6 For OCF2 or OC2F4,

[0196] R 7 is selected from OC2F4, OC3F6, OC4F8, OC5F 10 and OC6F 12 or a combination of 2 or 3 groups independently selected from these groups,

[0197] R 6’ For OCF2 or OC2F4,

[0198] R 7’ is selected from OC2F4, OC3F6, OC4F8, OC5F 10 and OC6F 12 or a combination of 2 or 3 groups independently selected from these groups,

[0199] g is an integer from 2 to 100,

[0200] g' is an integer from 2 to 100,

[0201] R r for

[0202]

[0203] (Where * represents the bonding position.) ];

[0204] -(OC6F 12 ) a -(OC5F 10 ) b -(OC4F8) c -(OC3F6) d -(OC2F4) e -(OCF2) f- (f5)

[0205] [In the formula, e is an integer from 1 to 200, a, b, c, d and f are each independently an integer from 0 to 200, and the order of existence of each repeating unit marked with a, b, c, d, e or f and enclosed in parentheses is arbitrary in the formula.]

[0206] -(OC6F 12 ) a -(OC5F 10 ) b -(OC4F8) c -(OC3F6) d -(OC2F4) e -(OCF2) f -(f6)

[0207] [In the formula, f is an integer from 1 to 200, a, b, c, d and e are each independently an integer from 0 to 200, and the order of existence of each repeating unit marked with a, b, c, d, e or f and enclosed in parentheses is arbitrary in the formula.]

[0208] In the above formula (f1), d is preferably an integer of 5 to 200, more preferably an integer of 10 to 100, further preferably an integer of 15 to 50, for example, an integer of 25 to 35. OC3F6 in the above formula (f1) is preferably (OCF2CF2CF2), (OCF(CF3)CF2) or (OCF2CF(CF3)), more preferably (OCF2CF2CF2). (OC2F4) in the above formula (f1) is preferably (OCF2CF2) or (OCF(CF3)), more preferably (OCF2CF2). In one embodiment, e is 0. In another embodiment, e is 1.

[0209] In the above formula (f2), e and f are each independently preferably an integer of 5 to 200, more preferably an integer of 10 to 200. In addition, the sum of c, d, e and f is preferably 5 or more, more preferably 10 or more, for example, 15 or more or 20 or more. In one embodiment, the above formula (f2) is preferably -(OCF2CF2CF2CF2) c -(OCF2CF2CF2) d -(OCF2CF2) e -(OCF2) f In another embodiment, formula (f2) may be -(OC2F4) e -(OCF2) f - the group shown.

[0210] In the above formula (f3), R6 Preferably, it is OC2F4. In the above (f3), R 7 It is preferably a group selected from OC2F4, OC3F6 and OC4F8, or a combination of two or three groups independently selected from these groups, and more preferably a group selected from OC3F6 and OC4F8. There is no particular limitation on the combination of two or three groups independently selected from OC2F4, OC3F6 and OC4F8, and examples thereof include -OC2F4OC3F6-, -OC2F4OC4F8-, -OC3F6OC2F4-, -OC3F6OC3F6-, -OC3F6OC4F8-, -OC4F8OC4F8-, -OC4F8OC3F6-, -OC4F8OC2F4-, -OC2 F4OC2F4OC3F6-, -OC2F4OC2F4OC4F8-, -OC2F4OC3F6OC2F4-, -OC2F4OC3F6OC3F6-, -OC2F4OC4F8OC2F4-, -OC3F6OC2F4OC2F4-, -OC3F6OC2F4OC3F6-, -OC3F6OC3F6OC2F4- and -OC4F8OC2F4OC2F4-. In the above formula (f3), g is preferably an integer of 3 or more, and more preferably an integer of 5 or more. The above g is preferably an integer of 50 or less. In the above formula (f3), OC2F4, OC3F6, OC4F8, OC5F 10 and OC6F 12 It may be either a straight chain or a branched chain, preferably a straight chain. In this embodiment, the above formula (f3) is preferably -(OC2F4-OC3F6) g - or - (OC2F4 - OC4F8) g -

[0211] In the above formula (f4), R 6 , R 7 and g are the same as those described in the above formula (f3) and have the same embodiment. 6’ , R 7’ and g' respectively have the same meanings as R described in the above formula (f3). 6 , R 7 Same as g, with the same implementation method. r Preferably

[0212]

[0213] [Wherein, * represents the bonding position.],

[0214] More preferably

[0215]

[0216] [Wherein, * represents the bonding position. ].

[0217] In the above formula (f5), e is preferably an integer of 1 to 100, more preferably an integer of 5 to 100. The sum of a, b, c, d, e and f is preferably 5 or more, more preferably 10 or more, for example 10 to 100.

[0218] In the above formula (f6), f is preferably an integer of 1 to 100, more preferably an integer of 5 to 100. The sum of a, b, c, d, e and f is preferably 5 or more, more preferably 10 or more, for example 10 to 100.

[0219] In one embodiment, the above R F It is a group represented by the above formula (f1).

[0220] In one embodiment, the above R F It is a group represented by the above formula (f2).

[0221] In one embodiment, the above R F It is a group represented by the above formula (f3).

[0222] In one embodiment, the above R F It is a group represented by the above formula (f4).

[0223] In one embodiment, the above R F It is a group represented by the above formula (f5).

[0224] In one embodiment, the above R F It is a group represented by the above formula (f6).

[0225] In one embodiment, from the viewpoint of the slipperiness of the surface treatment layer, the fluorine-containing silane compound contained in the surface treatment layer preferably includes the structure represented by the above formula (f1), (f2), (f3), (f5) or (f6), more preferably includes the structure represented by the above formula (f1) or (f2), and even more preferably includes the structure represented by the above formula (f1).

[0226] In another embodiment, the fluorine-containing silane compound that may be contained in the above-mentioned surface treatment layer preferably includes the structure represented by the above-mentioned formula (f1), (f2), (f3), (f4), (f5) or (f6), more preferably includes the structure represented by the above-mentioned formula (f1) or (f2), and even more preferably includes the structure represented by the above-mentioned formula (f2).

[0227] In the above R FIn the embodiment of the present invention, the ratio of e to f (hereinafter referred to as "e / f ratio") is 0.1 to 10, preferably 0.2 to 5, more preferably 0.2 to 2, further preferably 0.2 to 1.5, and further more preferably 0.2 to 0.85. By making the e / f ratio less than 10, the sliding property, wear durability and chemical resistance (for example, durability to artificial sweat) of the surface treatment layer obtained from the compound can be further improved. The smaller the e / f ratio, the more the sliding property and wear durability of the surface treatment layer are improved. On the other hand, by making the e / f ratio greater than 0.1, the stability of the compound can be further improved. The larger the e / f ratio, the more the stability of the compound is improved.

[0228] R F1 The fluorinated alkyl group represented is a group in which the hydrogen atoms contained in the alkyl group are replaced by fluorine atoms, and may be linear or branched. F1 The fluorinated alkyl represented by is preferably C 1－50 Fluorinated alkyl, more preferably C 1－20 Fluorinated alkyl, more preferably C 1－16 Fluorinated alkyl groups, for example, may be C 1－10 Fluorinated alkyl may further be C 1－6 Fluorinated alkyl groups, in particular C 1－3 In one embodiment, R F1 The fluorinated alkyl group represented is a perfluoroalkyl group in which all hydrogen atoms are replaced by fluorine atoms. 1－50 Perfluoroalkyl, more preferably linear or branched C 1－20 Perfluoroalkyl, more preferably linear or branched C 1－16 Perfluoroalkyl groups may be linear or branched C 1－10 The perfluoroalkyl group may be a linear or branched C 1－6 Perfluoroalkyl groups, in particular C 1－3 Perfluoroalkyl.

[0229] R F2 The fluorinated alkylene group represented is a group in which the hydrogen atoms contained in the alkylene group are replaced by fluorine atoms, and may be linear or branched. F2 The fluoroalkylene group represented by 1－50 Fluorinated alkylene, more preferably C 1－20 Fluorinated alkylene, more preferably C 1－16 Fluorinated alkylene, for example, may also be C 1－10 Fluorinated alkylene may further be C 1－6 Fluorinated alkylene, in particular C 1－3 In one embodiment, RF2 The fluorinated alkylene represented by is a perfluoroalkylene group in which all hydrogen atoms are replaced by fluorine atoms. In this embodiment, the perfluoroalkylene group is preferably a linear or branched C 1－50 Perfluoroalkylene, more preferably linear or branched C 1－20 Perfluoroalkylene, more preferably a linear or branched C 1－16 Perfluoroalkylene, for example, may be a linear or branched C 1－10 The perfluoroalkylene group may be a linear or branched C 1－6 Perfluoroalkylene, in particular, may be a linear or branched C 1－3 Perfluoroalkylene.

[0230] In the above fluorine-containing silane compounds, R F1 and R F2 The number average molecular weight of the moiety is not particularly limited, and is, for example, 500 to 30,000, preferably 1,500 to 30,000, and more preferably 2,000 to 10,000. F1 and R F2 The number average molecular weight is obtained by 19 The value measured by F-NMR.

[0231] In another embodiment, R F1 and R F2 The number average molecular weight of the moiety is 500 to 30,000, preferably 1,000 to 20,000, more preferably 2,000 to 15,000, further preferably 2,000 to 10,000, and for example, may be 3,000 to 6,000.

[0232] In another embodiment, R F1 and R F2 The number average molecular weight of the moiety may be 4,000 to 30,000, preferably 5,000 to 10,000, and more preferably 6,000 to 10,000.

[0233] In the above formulas (1) and (2), R Si Each occurrence is independently a monovalent group containing a Si atom to which a hydroxyl group, a hydrolyzable group, a hydrogen atom or a monovalent organic group is bonded, and at least one R Si It is a monovalent group containing a Si atom to which a hydroxyl group or a hydrolyzable group is bonded.

[0234] Here, the term "hydrolyzable group" means a group that can undergo a hydrolysis reaction, that is, a group that can be separated from the main skeleton of a compound by a hydrolysis reaction. Examples of hydrolyzable groups include -OR j , -OCOR j 、-O-N=CRj 2. -NR j 2. -NHR j , -NCO, halogen (in these formulas, R j represents substituted or unsubstituted C 1－4 Alkyl) etc.

[0235] In a preferred embodiment, R Si It is a monovalent group containing a Si atom to which a hydroxyl group or a hydrolyzable group is bonded.

[0236] In a preferred embodiment, R Si It is a group represented by the following formula (S1), (S2), (S3) or (S4).

[0237]

[0238] -SiR 11 n1 R 12 3-n1 (S2)

[0239] -SiR a1 k1 R b1 11 R c1 m1 (S3)

[0240] -CR d1 k2 R e1 12 R f1 m2 (S4)

[0241] -NR g1 R h1 (S5).

[0242] In the above formula, R 11 Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0243] R 11 Preferably, each occurrence thereof is independently a hydrolyzable group.

[0244] R 11 Preferably, each occurrence is independently -OR j 、-OCOR j 、-ON=CR j 2. -NR j 2. -NHR j , -NCO or halogen (in these formulas, R j represents substituted or unsubstituted C 1-4alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0245] In the above formula, R 12 Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0246] In R 12 The monovalent organic group is preferably C 1-20 Alkyl, more preferably C 1-6 The alkyl group is more preferably a methyl group.

[0247] In the above formula, n1 is in each (SiR 11 n1 R 12 3-n1 ) units are independently an integer from 0 to 3. Si In the case of a group represented by formula (S1) or formula (S2), the terminal R Si part (hereinafter, sometimes referred to as the "terminal part" of formula (1) and formula (2)), at least one (SiR 11 n1 R 12 3-n1 ) unit. That is, at the terminal part, all n1 are not 0 at the same time. In other words, at the terminal part of formula (1) and formula (2), there is at least one Si atom bonded with a hydroxyl group or a hydrolyzable group.

[0248] n1 in each (SiR 11 n1 R 12 3-n1 ) units are each independently an integer of preferably 1 to 3, more preferably 2 to 3, and even more preferably 3.

[0249] In the above formula, X 11 Each occurrence is independently a single bond or a divalent organic group. The divalent organic group is preferably -R 28 -O x -R 29 -(where R 28 and R 29 is independently a single bond or C1－20 alkylene, x is 0 or 1. ). 1－20 The alkylene group may be a straight chain or a branched chain, and is preferably a straight chain. 1－20 The alkylene group is preferably C 1－10 Alkylene, more preferably C 1－6 Alkylene, more preferably C 1－3 Alkylene.

[0250] In one embodiment, X 11 In each occurrence, independently -C 1－6 Alkylene-O-C 1－6 Alkylene-or-O-C 1－6 Alkylene-.

[0251] In a preferred embodiment, X 11 is independently a single bond or a linear C 1－6 Alkylene, preferably a single bond or straight chain C 1－3 Alkylene, more preferably a single bond or straight chain C 1－2 Alkylene, more preferably straight chain C 1－2 Alkylene.

[0252] In the above formula, R 13 Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is preferably C 1－20 Alkyl. 1－20 The alkyl group may be a linear chain or a branched chain, and is preferably a linear chain.

[0253] In a preferred embodiment, R 13 Each occurrence is independently a hydrogen atom or a linear C 1－6 Alkyl, preferably a hydrogen atom or a straight-chain C 1－3 The alkyl group is preferably a hydrogen atom or a methyl group.

[0254] In the above formula, t is independently an integer of 2 or more at each occurrence.

[0255] In a preferred embodiment, t is independently an integer of 2 to 10, preferably an integer of 2 to 6, at each occurrence.

[0256] In the above formula, R 14 is independently a hydrogen atom, a halogen atom or -X 11 -SiR 11 n1 R 12 3－n1 The halogen atom is preferably an iodine atom, a chlorine atom or a fluorine atom, more preferably a fluorine atom. In a preferred embodiment, R 14 A hydrogen atom.

[0257] In the above formula, R 15 Each occurrence is independently a single bond, an oxygen atom, an alkylene group having 1 to 6 carbon atoms, or an alkyleneoxy group having 1 to 6 carbon atoms.

[0258] In one embodiment, R 15 Each occurrence is independently an oxygen atom, an alkylene group having 1 to 6 carbon atoms, or an alkyleneoxy group having 1 to 6 carbon atoms.

[0259] In a preferred embodiment, R 15 For a single key.

[0260] In one embodiment, formula (S1) is the following formula (S1-a).

[0261]

[0262] [Wherein,

[0263] R 11 , R 12 , R 13 , X 11 and n1 have the same meaning as in the above formula (S1);

[0264] t1 and t2 are each independently an integer greater than 1 at each occurrence, preferably an integer from 1 to 10, more preferably an integer from 2 to 10, for example an integer from 1 to 5 or an integer from 2 to 5;

[0265] The order of presence of the repeating units indicated by t1 and t2 and enclosed in parentheses is arbitrary in the formula.]

[0266] In a preferred embodiment, formula (S1) is the following formula (S1-b).

[0267]

[0268] [Where R 11 , R 12 , R 13 , X 11 , n1 and t have the same meanings as those in the above formula (S1).]

[0269] In the above formula, R a1 In each occurrence, independently -Z 1 -SiR 21 p1 R 22 q1 R 23 r1 .

[0270] The above Z1 Each occurrence is independently an oxygen atom or a divalent organic group. 1 The right side of the structure is 21 p1 R 22 q1 R 23 r1 ) bonding.

[0271] In a preferred embodiment, Z 1 It is a divalent organic group.

[0272] In a preferred embodiment, Z 1 Not including Z 1 The bonded Si atom forms a siloxane bond. 1 -Si) does not contain siloxane bonds.

[0273] The above Z 1 Preferably C 1－6 Alkylene, -(CH2) z1 -O-(CH2) z2 -(wherein z1 is an integer of 0 to 6, for example, an integer of 1 to 6, and z2 is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z3 -phenylene-(CH2) z4 - (wherein z3 is an integer of 0 to 6, for example, an integer of 1 to 6, and z4 is an integer of 0 to 6, for example, an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C 2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0274] In a preferred embodiment, Z 1 C 1－6 Alkylene or -(CH2) z3 -phenylene-(CH2) z4 -, preferably -phenylene-(CH2) z4 -. Z 1 In the case of this group, light resistance, particularly ultraviolet resistance, is further improved.

[0275] In another preferred embodiment, the above Z 1 C 1－3 In one embodiment, Z 1 It may be -CH2CH2CH2-. In another embodiment, Z1 It can be -CH2CH2-.

[0276] The above R 21 In each occurrence, independently -Z 1’ -SiR 21’ p1’ R 22’ q1’ R 23’ r1’ .

[0277] The above Z 1’ Each occurrence is independently an oxygen atom or a divalent organic group. 1’ The right side of the structure is 21’ p1’ R 22’ q1’ R 23’ r1’ ) bonding.

[0278] In a preferred embodiment, Z 1’ It is a divalent organic group.

[0279] In a preferred embodiment, Z 1’ Not including Z 1’ The bonded Si atom forms a siloxane bond. 1’ -Si) does not contain siloxane bonds.

[0280] The above Z 1’ Preferably C 1－6 Alkylene, -(CH2) z1’ -O-(CH2) z2’ -(wherein z1' is an integer of 0 to 6, for example, an integer of 1 to 6, and z2' is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z3’ -phenylene-(CH2) z4’ - (wherein, z3' is an integer of 0 to 6, for example, an integer of 1 to 6, and z4' is an integer of 0 to 6, for example, an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C 2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0281] In a preferred embodiment, Z 1’ C 1－6 Alkylene or -(CH2) z3’-phenylene-(CH2) z4’ -, preferably -phenylene-(CH2) z4’ -. In Z 1’ In the case of the above groups, light resistance, particularly ultraviolet resistance, is further improved.

[0282] In another preferred embodiment, the above Z 1’ C 1－3 In one embodiment, Z 1’ It may be -CH2CH2CH2-. In another embodiment, Z 1’ It can be -CH2CH2-.

[0283] The above R 21’ In each occurrence, independently -Z 1” -SiR 22” q1” R 23” r1” .

[0284] The above Z 1” Each occurrence is independently an oxygen atom or a divalent organic group. 1” The right side of the structure is 22” q1” R 23” r1” ) bonding.

[0285] In a preferred embodiment, Z 1” It is a divalent organic group.

[0286] In a preferred embodiment, Z 1" Not including Z 1" The bonded Si atom forms a siloxane bond. 1" -Si) does not contain siloxane bonds.

[0287] The above Z 1” Preferably C 1－6 Alkylene, -(CH2) z1” -O-(CH2) z2” -(wherein, z1" is an integer of 0 to 6, for example, an integer of 1 to 6, and z2" is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z3” -phenylene-(CH2) z4” - (wherein, z3" is an integer of 0 to 6, such as an integer of 1 to 6, and z4" is an integer of 0 to 6, such as an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C1－6 Alkyl, C 2－6 Alkenyl and C 2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0288] In a preferred embodiment, Z 1” C 1－6 Alkylene or -(CH2) z3” -phenylene-(CH2)z4"-, preferably -phenylene-(CH2) z4” -. In Z 1” In the case of the above groups, light resistance, particularly ultraviolet resistance, is further improved.

[0289] In another preferred embodiment, the above Z 1” C 1－3 In one embodiment, Z 1” It may be -CH2CH2CH2-. In another embodiment, Z 1” It can be -CH2CH2-.

[0290] The above R 22” Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0291] The above R 22” Preferably, each occurrence is independently a hydrolyzable group.

[0292] The above R 22” Preferably, each occurrence is independently -OR j , -OCOR j 、-O-N=CR j 2. -NR j 2. -NHR j , -NCO or halogen (in these formulas, R j Indicates substituted or unsubstituted C 1－4 alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0293] The above R 23” Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0294] In the above R 23” The monovalent organic group is preferably C 1－20 Alkyl, more preferably C 1－6 The alkyl group is more preferably a methyl group.

[0295] The above q1" is an integer of 0 to 3 at each occurrence, and the above r1" is an integer of 0 to 3 at each occurrence. In addition, the sum of q1" and r1" is (SiR 22” q1” R 23” r1” ) unit is 3.

[0296] The above q1" is in each (SiR 22” q1” R 23” r1” ) units are each independently an integer of preferably 1 to 3, more preferably 2 to 3, and even more preferably 3.

[0297] The above R 22’ Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0298] R 22’ Preferably, each occurrence is independently a hydrolyzable group.

[0299] R 22’ Preferably, each occurrence is independently -OR j , -OCOR j 、-O-N=CR j 2. -NR j 2. -NHR j , -NCO or halogen (in these formulas, R j Indicates substituted or unsubstituted C 1－4 alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0300] The above R 23’ Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0301] In R 23’ The monovalent organic group is preferably C 1－20Alkyl, more preferably C 1－6 The alkyl group is more preferably a methyl group.

[0302] The above p1' is independently an integer of 0 to 3 at each occurrence, q1' is independently an integer of 0 to 3 at each occurrence, and r1' is independently an integer of 0 to 3 at each occurrence. In addition, the sum of p1', q1' and r1' is (SiR 21’ p1’ R 22’ q1’ R 23’ r1’ ) unit is 3.

[0303] In one embodiment, p1′ is zero.

[0304] In one embodiment, p1′ is 21’ p1’ R 22’ q1’ R 23’ r1’ ) units are each independently an integer of 1 to 3, an integer of 2 to 3, or may be 3. In a preferred embodiment, p1′ is 3.

[0305] In one embodiment, q1' is in each (SiR 21’ p1’ R 22’ q1’ R 23’ r1’ ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0306] In one embodiment, p1' is 0, q1' is 21’ p1’ R 22’ q1’ R 23’ r1’ ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0307] The above R 22 Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0308] R 22 Preferably, each occurrence is independently a hydrolyzable group.

[0309] R 22 Preferably, each occurrence is independently -OR j , -OCOR j 、-O-N=CR j 2. -NRj 2. -NHR j , -NCO or halogen (in these formulas, R j Indicates substituted or unsubstituted C 1－4 alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0310] The above R 23 Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0311] In R 23 The monovalent organic group is preferably C 1－20 Alkyl, more preferably C 1－6 The alkyl group is more preferably a methyl group.

[0312] The above p1 is independently an integer of 0 to 3 at each occurrence, q1 is independently an integer of 0 to 3 at each occurrence, and r1 is independently an integer of 0 to 3 at each occurrence. In addition, the sum of p1, q1 and r1 is (SiR 21 p1 R 22 q1 R 23 r1 ) unit is 3.

[0313] In one embodiment, p1 is zero.

[0314] In one embodiment, p1 is in each (SiR 21 p1 R 22 q1 R 23 r1 ) units may each independently be an integer of 1 to 3, an integer of 2 to 3, or 3. In a preferred embodiment, p1 is 3.

[0315] In one embodiment, q1 is in each (SiR 21 p1 R 22 q1 R 23 r1 ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0316] In one embodiment, p1 is 0, q1 is 21 p1 R 22 q1 R 23 r1 ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0317] In the above formula, R b1 Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0318] The above R b1 Preferably, each occurrence thereof is independently a hydrolyzable group.

[0319] The above R b1 Preferably, each occurrence is independently -OR j , -OCOR j 、-O-N=CR j 2. -NR j 2. -NHR j , -NCO or halogen (in these formulas, R j represents substituted or unsubstituted C 1－4 alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0320] In the above formula, R c1 Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0321] In the above R c1 The monovalent organic group is preferably C 1－20 Alkyl, more preferably C 1－6 The alkyl group is more preferably a methyl group.

[0322] The above k1 is independently an integer of 0 to 3 at each occurrence, l1 is independently an integer of 0 to 3 at each occurrence, and m1 is independently an integer of 0 to 3 at each occurrence. In addition, the sum of k1, l1 and m1 is (SiR a1 k1 R b1l1 R c1 m1 ) unit is 3.

[0323] In one embodiment, k1 is a1 k1 R b1 l1 R c1 m1 ) units are each independently an integer of 1 to 3, preferably 2 or 3, and more preferably 3. In a preferred embodiment, k1 is 3.

[0324] In the above formula (1) and formula (2), R Si In the case of a group represented by formula (S3), it is preferred that at least two Si atoms to which a hydroxyl group or a hydrolyzable group is bonded exist at the terminal parts of formula (1) and formula (2).

[0325] In a preferred embodiment, the group represented by formula (S3) has -Z 1 -SiR 22 q1 R 23 r1 (wherein, q1 is an integer of 1 to 3, preferably 2 or 3, more preferably 3, and r1 is an integer of 0 to 2.) 1’ -SiR 22’ q1’ R 23’ r1’ (wherein, q1' is an integer of 1 to 3, preferably 2 or 3, more preferably 3, and r1' is an integer of 0 to 2.) or -Z 1” -SiR 22” q1” R 23” r1” (wherein, q1" is an integer of 1 to 3, preferably 2 or 3, more preferably 3, and r1" is an integer of 0 to 2.) 1 , Z 1’ , Z 1” , R 22 , R 23 , R 22’ , R 23’ , R 22” and R 23” Same meaning as above.

[0326] In a preferred embodiment, in formula (S3) there is R 21’ In the case of at least one, preferably all, R 21’ Here, q1" is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0327] In a preferred embodiment, in formula (S3) there is R 21 In the case of at least one, preferably all, R 21 In the formula (a), p1′ is 0, and q1′ is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0328] In a preferred embodiment, in formula (S3) there is R a1 In the case of at least one, preferably all, R a1 In the formula (a), p1 is 0, q1 is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0329] In a preferred embodiment, in formula (S3), k1 is 2 or 3, preferably 3, p1 is 0, and q1 is 2 or 3, preferably 3.

[0330] R d1 In each occurrence, independently -Z 2 -CR 31 p2 R 32 q2 R 33 r2 .

[0331] Z 2 Each occurrence is independently a single bond, an oxygen atom or a divalent organic group. 2 The right side of the structure is the same as (CR 31 p2 R 32 q2 R 33 r2 ) bonding.

[0332] In a preferred embodiment, Z 2 It is a divalent organic group.

[0333] The above Z 2 Preferably C 1－6 Alkylene, -(CH2) z5 -O-(CH2) z6 -(wherein z5 is an integer of 0 to 6, for example, an integer of 1 to 6, and z6 is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z7 -phenylene-(CH2) z8 - (wherein z7 is an integer of 0 to 6, for example, an integer of 1 to 6, and z8 is an integer of 0 to 6, for example, an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0334] In a preferred embodiment, Z 2 C 1－6 Alkylene or -(CH2) z7 -phenylene-(CH2) z8 -, preferably -phenylene-(CH2) z8 -. Z 2 In the case of this group, light resistance, particularly ultraviolet resistance, is further improved.

[0335] In another preferred embodiment, the above Z 2 C 1－3 In one embodiment, Z 2 It may be -CH2CH2CH2-. In another embodiment, Z 2 It can be -CH2CH2-.

[0336] R 31 In each occurrence, independently -Z 2’ -CR 32’ q2’ R 33’ r2’ .

[0337] Z 2’ Each occurrence is independently a single bond, an oxygen atom or a divalent organic group. 2’ The right side of the structure is the same as (CR 32’ q2’ R 33’ r2’ ) bonding.

[0338] The above Z 2’ Preferably C 1－6 Alkylene, -(CH2) z5’ -O-(CH2) z6’ -(wherein z5' is an integer of 0 to 6, for example, an integer of 1 to 6, and z6' is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z7’ -phenylene-(CH2) z8’ - (wherein, z7' is an integer of 0 to 6, for example, an integer of 1 to 6, and z8' is an integer of 0 to 6, for example, an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C 2－6The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0339] In a preferred embodiment, Z 2’ C 1－6 Alkylene or -(CH2) z7’ -phenylene-(CH2) z8’ -, preferably -phenylene-(CH2) z8’ -. Z 2’ In the case of this group, light resistance, particularly ultraviolet resistance, is further improved.

[0340] In another preferred embodiment, the above Z 2’ C 1－3 In one embodiment, Z 2’ It may be -CH2CH2CH2-. In another embodiment, Z 2’ It can be -CH2CH2-.

[0341] The above R 32’ In each occurrence, independently -Z 3 -SiR 34 n2 R 35 3－n2 .

[0342] The above Z 3 Each occurrence is independently a single bond, an oxygen atom or a divalent organic group. 3 The right side of the structure is 34 n2 R 35 3－n2 ) bonding.

[0343] In one embodiment, Z 3 For oxygen atoms.

[0344] In one embodiment, Z 3 It is a divalent organic group.

[0345] The above Z 3 Preferably C 1－6 Alkylene, -(CH2) z5” -O-(CH2) z6” -(wherein, z5" is an integer of 0 to 6, such as an integer of 1 to 6, and z6" is an integer of 0 to 6, such as an integer of 1 to 6) or -(CH2) z7” -phenylene-(CH2) z8” - (wherein, z7" is an integer of 0 to 6, such as an integer of 1 to 6, and z8" is an integer of 0 to 6, such as an integer of 1 to 6). 1－6The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C 2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0346] In a preferred embodiment, Z 3 C 1－6 Alkylene or -(CH2) z7” -phenylene-(CH2) z8” -, preferably -phenylene-(CH2) z8” -. Z 3 In the case of this group, light resistance, particularly ultraviolet resistance, is further improved.

[0347] In another preferred embodiment, the above Z 3 C 1－3 In one embodiment, Z 3 It may be -CH2CH2CH2-. In another embodiment, Z 3 It can be -CH2CH2-.

[0348] The above R 34 Each occurrence is independently a hydroxyl group or a hydrolyzable group.

[0349] R 34 Preferably, each occurrence is independently a hydrolyzable group.

[0350] R 34 Preferably, each occurrence is independently -OR j , -OCOR j 、-O-N=CR j 2. -NR j 2. -NHR j , -NCO or halogen (in these formulas, R j Indicates substituted or unsubstituted C 1－4 alkyl), more preferably -OR j (ie, alkoxy). j , non-substituted alkyl groups such as methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, etc., and substituted alkyl groups such as chloromethyl, etc. are listed. Among these, alkyl groups, especially non-substituted alkyl groups, are preferred, and methyl or ethyl groups are more preferred. In one embodiment, R j is methyl, in another embodiment, R j It is ethyl.

[0351] The above R 35Each occurrence is independently a hydrogen atom or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0352] In the above R 35 The monovalent organic group is preferably C 1－20 Alkyl, more preferably C 1－6 The alkyl group is more preferably a methyl group.

[0353] In the above formula, n2 is in each (SiR 34 n2 R 35 3－n2 ) units are independently an integer of 0 to 3. Si In the case of a group represented by formula (S4), at least one (SiR 34 n2 R 35 3－n2 ) unit. That is, at the terminal part, all n2 are not 0 at the same time. In other words, at the terminal part of formula (1) and formula (2), there is at least one Si atom bonded with a hydroxyl group or a hydrolyzable group.

[0354] n2 in each (SiR 34 n2 R 35 3－n2 ) units are each independently an integer of preferably 1 to 3, more preferably 2 to 3, and even more preferably 3.

[0355] The above R 33’ Each occurrence is independently a hydrogen atom, a hydroxyl group or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0356] In the above R 33’ The monovalent organic group is preferably C 1－20 Alkyl or -(C s H 2s ) t1 -(O-C s H 2s ) t2 (wherein, s is an integer of 1 to 6, preferably an integer of 2 to 4, t1 is 1 or 0, preferably 0, t2 is an integer of 1 to 20, preferably an integer of 2 to 10, more preferably an integer of 2 to 6.) More preferably, C 1－20 Alkyl, more preferably C 1－6 The alkyl group is particularly preferably a methyl group.

[0357] In one embodiment, R 33’ It is hydroxyl.

[0358] In another embodiment, R 33’ is a monovalent organic group, preferably C 1－20 Alkyl, more preferably C 1－6 alkyl.

[0359] The above q2' is independently an integer of 0 to 3 at each occurrence, and the above r2' is independently an integer of 0 to 3 at each occurrence. In addition, the sum of q2' and r2' is (CR 32’ q2’ R 33’ r2’ ) unit is 3.

[0360] q2' in each (CR 32’ q2’ R 33’ r2’ ) units are each independently an integer of preferably 1 to 3, more preferably 2 to 3, and even more preferably 3.

[0361] R 32 In each occurrence, independently -Z 3 -SiR 34 n2 R 35 3－n2 . The -Z 3 -SiR 34 n2 R 35 3－n2 With the above R 32’ The records in have the same meaning.

[0362] The above R 33 Each occurrence is independently a hydrogen atom, a hydroxyl group or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0363] The above R 33 The monovalent organic group is preferably C 1－20 Alkyl or -(C s H 2s ) t1 -(O-C s H 2s ) t2 (wherein, s is independently an integer of 1 to 6 at each occurrence, preferably an integer of 2 to 4, t1 is 1 or 0, preferably 0, and t2 is an integer of 1 to 20, preferably an integer of 2 to 10, more preferably an integer of 2 to 6.) More preferably, C 1－20 Alkyl, more preferably C 1－6 The alkyl group is particularly preferably a methyl group.

[0364] In one embodiment, R33 It is hydroxyl.

[0365] In another embodiment, R 33 is a monovalent organic group, preferably C 1－20 Alkyl, more preferably C 1－6 alkyl.

[0366] The above p2 is independently an integer of 0 to 3 at each occurrence, q2 is independently an integer of 0 to 3 at each occurrence, and r2 is independently an integer of 0 to 3 at each occurrence. In addition, the sum of p2, q2 and r2 is (CR 31 p2 R 32 q2 R 33 r2 ) unit is 3.

[0367] In one embodiment, p2 is 0.

[0368] In one embodiment, p2 is 31 p2 R 32 q2 R 33 r2 ) units may each independently be an integer of 1 to 3, an integer of 2 to 3, or 3. In a preferred embodiment, p2 is 3.

[0369] In one embodiment, q2 is 31 p2 R 32 q2 R 33 r2 ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0370] In one embodiment, p2 is 0, q2 is 31 p2 R 32 q2 R 33 r2 ) units are each independently an integer of 1 to 3, preferably an integer of 2 to 3, and more preferably 3.

[0371] The above R e1 In each occurrence, independently -Z 3 -SiR 34 n2 R 35 3－n2 . The -Z 3 -SiR 34 n2R 35 3－n2 With the above R 32’ The records in have the same meaning.

[0372] The above R f1 Each occurrence is independently a hydrogen atom, a hydroxyl group or a monovalent organic group. The monovalent organic group is a monovalent organic group other than the above-mentioned hydrolyzable group.

[0373] In the above R f1 The monovalent organic group is preferably C 1－20 Alkyl or -(C s H 2s ) t1 -(O-C s H 2s ) t2 (wherein, s is an integer of 1 to 6, preferably an integer of 2 to 4, t1 is 1 or 0, preferably 0, t2 is an integer of 1 to 20, preferably an integer of 2 to 10, more preferably an integer of 2 to 6.) More preferably, C 1－20 Alkyl, more preferably C 1－6 The alkyl group is particularly preferably a methyl group.

[0374] In one embodiment, R f1 It is hydroxyl.

[0375] In another embodiment, R f1 is a monovalent organic group, preferably C 1－20 Alkyl, more preferably C 1－6 alkyl.

[0376] The above k2 is independently an integer of 0 to 3 at each occurrence, l2 is independently an integer of 0 to 3 at each occurrence, and m2 is independently an integer of 0 to 3 at each occurrence. In addition, the sum of k2, l2 and m2 is (CR d1 k2 R e1 l2 R f1 m2 ) unit is 3.

[0377] In the above formula (1) and formula (2), R Si In the case of a group represented by formula (S4), it is preferred that at least two Si atoms to which a hydroxyl group or a hydrolyzable group is bonded exist at the terminal parts of formula (1) and formula (2).

[0378] In one embodiment, R Si In the case of a group represented by formula (S4), n2 is 1 to 3, preferably 2 or 3, more preferably 3 (SiR 34 n2 R35 3－n2 ) units exist in 2 or more numbers at each terminal portion of formula (1) and formula (2), for example, 2 to 27 numbers, preferably 2 to 9 numbers, more preferably 2 to 6 numbers, even more preferably 2 to 3 numbers, and particularly preferably 3 numbers.

[0379] In a preferred embodiment, in formula (S4), there is R 32’ In the case of at least one, preferably all, R 32’ Among them, n2 is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0380] In a preferred embodiment, in formula (S4), there is R 32 In the case of at least one, preferably all, R 32 Among them, n2 is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0381] In a preferred embodiment, in formula (S4), there is R e1 In the case of at least one, preferably all, R a1 Among them, n2 is an integer of 1 to 3, preferably 2 or 3, and more preferably 3.

[0382] In a preferred embodiment, in formula (S4), k2 is 0, l2 is 2 or 3, preferably 3, and n2 is 2 or 3, preferably 3.

[0383] The above R g1 and R h1 In each occurrence, independently -Z 4 -SiR 11 n1 R 12 3－n1 , -Z 4 -SiR a1 k1 R b1 l1 R c1 m1 , -Z 4 -CR d1 k2 R e1 l2 R f1 m2 Among them, R 11 , R 12 , R a1 , R b2 , R c1 , R d1 , R e1 , R f1, n1, k1, l1, m1, k2, l2 and m2 have the same meanings as above.

[0384] In a preferred embodiment, R g1 and R h1 Independently -Z 4 -SiR 11 n1 R 12 3－n1 .

[0385] The above Z 4 Each occurrence is independently a single bond, an oxygen atom or a divalent organic group. 4 The right side of the structure is 11 n1 R 12 3－n1 ) bonding.

[0386] In one embodiment, Z 4 For oxygen atoms.

[0387] In one embodiment, Z 4 It is a divalent organic group.

[0388] The above Z 4 Preferably C 1－6 Alkylene, -(CH2) z5” -O-(CH2) z6” -(wherein, z5" is an integer of 0 to 6, for example, an integer of 1 to 6, and z6" is an integer of 0 to 6, for example, an integer of 1 to 6) or -(CH2) z7” -phenylene-(CH2) z8” - (wherein, z7" is an integer of 0 to 6, for example, an integer of 1 to 6, and z8" is an integer of 0 to 6, for example, an integer of 1 to 6). 1－6 The alkylene group may be straight chain or branched, preferably straight chain. These groups may be substituted with, for example, fluorine atoms, C 1－6 Alkyl, C 2－6 Alkenyl and C 2－6 The alkynyl group may have one or more substituents, but is preferably unsubstituted.

[0389] In a preferred embodiment, Z 4 C 1－6 Alkylene or -(CH2) z7” -phenylene-(CH2) z8” -, preferably -phenylene-(CH2) z8” -. Z 3 In the case of this group, light resistance, particularly ultraviolet resistance, is further improved.

[0390] In another preferred embodiment, the above Z 4 C 1－3 In one embodiment, Z 4 It may be -CH2CH2CH2-. In another embodiment, Z 4 It can be -CH2CH2-.

[0391] In one embodiment, R Si It is a group represented by formula (S2), formula (S3), formula (S4) or formula (S5). These compounds can form a surface treatment layer having high surface slip properties.

[0392] In one embodiment, R Si The group is represented by formula (S3), formula (S4) or formula (S5). These compounds have multiple hydrolyzable groups at one end, so they can strongly adhere to the substrate and form a surface treatment layer with high wear durability.

[0393] In one embodiment, R Si The group is represented by formula (S3) or formula (S4). These compounds have a plurality of hydrolyzable groups branching from one Si atom or C atom at one end, and thus can form a surface treatment layer having higher wear durability.

[0394] In one embodiment, R Si It is a group represented by formula (S1).

[0395] In one embodiment, R Si It is a group represented by formula (S2).

[0396] In one embodiment, R Si It is a group represented by formula (S3).

[0397] In one embodiment, R Si It is a group represented by formula (S4).

[0398] In one embodiment, R Si It is a group represented by formula (S5).

[0399] In the above formulas (1) and (2), X A It can be understood that the fluoropolyether part (R F1 and R F2 ) and the site providing bonding energy to the substrate (R Si Therefore, as long as the compounds represented by formula (1) and formula (2) can exist stably, the X AIt may be a single bond or an arbitrary group.

[0400] In the above formula (1), α is an integer of 1 to 9, and β is an integer of 1 to 9. These α and β can be determined according to X A The sum of α and β and X A have the same valence. For example, X A When X is a devalent organic group, the sum of α and β is 10, for example, α is 9 and β is 1, α is 5 and β is 5, or α is 1 and β is 9. A In the case of a divalent organic group, α and β are 1.

[0401] In the above formula (2), γ is an integer of 1 to 9. γ can be calculated according to X A That is, γ is the value of X A The value of the valence minus 1.

[0402] X A Each is independently a single bond or a 2- to 10-valent organic group;

[0403] The above X A The 2- to 10-valent organic group is preferably a 2- to 8-valent organic group. In one embodiment, the 2- to 10-valent organic group is preferably a 2- to 4-valent organic group, more preferably a 2-valent organic group. In another embodiment, the 2- to 10-valent organic group is preferably a 3- to 8-valent organic group, more preferably a 3- to 6-valent organic group.

[0404] In one embodiment, X A is a single bond or a divalent organic group, α is 1, and β is 1.

[0405] In one embodiment, X A is a single bond or a divalent organic group, and γ is 1.

[0406] In one approach, X A It is a tri- to hexavalent organic group, wherein α is 1 and β is 2-5.

[0407] In one embodiment, X A It is a tri- to hexavalent organic group, and γ is 2-5.

[0408] In one approach, X A It is a trivalent organic group, α is 1, and β is 2.

[0409] In one embodiment, X A It is a trivalent organic group, and γ is 2.

[0410] X AWhen it is a single bond or a divalent organic group, Formula (1) and Formula (2) are represented by the following Formula (1′) and Formula (2′).

[0411] R F1 -X A -R Si (1')

[0412] R Si -X A -R F2 -X A -R Si (2')

[0413] In one embodiment, X A For a single key.

[0414] In another embodiment, X A It is a divalent organic group.

[0415] In one embodiment, as X A , for example, a single bond or a divalent organic group represented by the following formula:

[0416] -(R 51 ) p5 -(X 51 ) q5 -

[0417] [Where:

[0418] R 51 Represents a single bond, -(CH2) s5 - or o-phenylene, m-phenylene or p-phenylene, preferably -(CH2) s5 -

[0419] s5 is an integer of 1 to 20, preferably an integer of 1 to 6, more preferably an integer of 1 to 3, and further preferably 1 or 2.

[0420] X 51 Indicates - (X 52 ) l5 -

[0421] X 52 Each occurrence independently represents a group selected from -O-, -S-, o-phenylene, m-phenylene or p-phenylene, -C(O)O-, -Si(R 53 )2-、-(Si(R 53 )2O) m5 -Si(R 53 )2-,-CONR 54 -、-O-CONR 54 -, -NR 54 - and -(CH2)n5 - group,

[0422] R 53 Each occurrence independently represents phenyl, C 1－6 Alkyl or C 1－6 Alkoxy, preferably phenyl or C 1－6 Alkyl, more preferably methyl,

[0423] R 54 Each occurrence independently represents a hydrogen atom, a phenyl group or a C 1－6 an alkyl group (preferably a methyl group),

[0424] m5 is independently an integer of 1 to 100 at each occurrence, preferably an integer of 1 to 20,

[0425] n5 is independently an integer of 1 to 20 at each occurrence, preferably an integer of 1 to 6, more preferably an integer of 1 to 3,

[0426] l5 is an integer of 1 to 10, preferably an integer of 1 to 5, and more preferably an integer of 1 to 3.

[0427] p5 is 0 or 1,

[0428] q5 is 0 or 1,

[0429] wherein at least one of p5 and q5 is 1, and the order of existence of the repeating units marked with p5 or q5 and enclosed in brackets is arbitrary]. wherein X A (Typically X A The hydrogen atoms) may be selected from fluorine atoms, C 1－3 alkyl and C1-3 fluoroalkyl. A Not substituted by these groups.

[0430] In a preferred embodiment, the above X A Each independently is -(R 51 ) p5 -(X 51 ) q5 -R 52 -. R 52 Represents a single bond, -(CH2) t5 - or o-phenylene, m-phenylene or p-phenylene, preferably -(CH2) t5 -. t5 is an integer of 1 to 20, preferably an integer of 2 to 6, and more preferably an integer of 2 to 3. 52 (Typically R 52 The hydrogen atoms) may be selected from fluorine atoms, C 1－3 Alkyl and C 1－3In a preferred embodiment, R 56 Not substituted by these groups.

[0431] Preferably the above X A Respectively and independently are:

[0432] single bond,

[0433] C 1－20 Alkylene,

[0434] -R 51 -X 53 -R 52 -,or

[0435] -X 54 -R 52 -

[0436] [Where R 51 and R 52 Same meaning as above,

[0437] X 53 express

[0438] -O-,

[0439] -S-,

[0440] -C(O)O-,

[0441] -CONR 54 -

[0442] -O-CONR 54 -

[0443] -Si(R 53 )2-、

[0444] -(Si(R 53 )2O) m5 -Si(R 53 )2-、

[0445] -O-(CH2) u5 -(Si(R 53 )2O) m5 -Si(R 53 )2-、

[0446] -O-(CH2) u5 -Si(R 53 )2-O-Si(R 53 )2-CH2CH2-Si(R 53 )2-O-Si(R 53 )2-、

[0447] -O-(CH2) u5 -Si(OCH3)2OSi(OCH3)2-,

[0448] -CONR 54 -(CH2) u5 -(Si(R 53 )2O) m5 -Si(R 53 )2-、

[0449] -CONR 54 -(CH2) u5 -N(R 54 )-,or

[0450] -CONR 54 -(o-phenylene, m-phenylene or p-phenylene)-Si(R 53 )2-

[0451] (Where R 53 , R 54 and m5 have the same meaning as above,

[0452] u5 is an integer of 1 to 20, preferably an integer of 2 to 6, and more preferably an integer of 2 to 3. ), X 54 express

[0453] -S-,

[0454] -C(O)O-,

[0455] -CONR 54 -

[0456] -O-CONR 54 -

[0457] -CONR 54 -(CH2) u5 -(Si(R 54 )2O) m5 -Si(R 54 )2-、

[0458] -CONR 54 -(CH2) u5 -N(R 54 )-,or

[0459] -CONR 54 -(o-phenylene, m-phenylene or p-phenylene)-Si(R 54 )2-(wherein, the symbols have the same meanings as above.). ].

[0460] More preferably, the above X ARespectively and independently are:

[0461] single bond,

[0462] C 1－20 Alkylene,

[0463] -(CH2) s5 -X 53 -

[0464] -(CH2) s5 -X 53 -(CH2) t5 -

[0465] -X 54 -,or

[0466] -X 54 -(CH2) t5 -

[0467] [Wherein, X 53 , X 54 , s5 and t5 have the same meanings as above. ].

[0468] More preferably, the above X A Can be independently:

[0469] single bond,

[0470] C 1－20 Alkylene,

[0471] -(CH2) s5 -X 53 -(CH2) t5 -,or

[0472] -X 54 -(CH2) t5 -

[0473] [In the formula, each symbol has the same meaning as above. ]

[0474] In a preferred embodiment, the above X A Can be independently:

[0475] single bond

[0476] C 1－20 Alkylene,

[0477] -(CH2) s5 -X 53 -,or

[0478] -(CH2) s5 -X 53 -(CH2) t5 -

[0479] [Wherein,

[0480] X 53 -O-, -CONR 54 -or-O-CONR 54 -

[0481] R 54 Each occurrence independently represents a hydrogen atom, a phenyl group or a C 1－6 Alkyl, s5 is an integer from 1 to 20,

[0482] t5 is an integer from 1 to 20. ].

[0483] In a preferred embodiment, the above X A Can be independently:

[0484] -(CH2) s5 -O-(CH2) t5 -

[0485] -CONR 54 -(CH2) t5 -

[0486] [Wherein,

[0487] R 54 is independently a hydrogen atom, a phenyl group or a C 1－6 alkyl,

[0488] s5 is an integer from 1 to 20,

[0489] t5 is an integer from 1 to 20. ].

[0490] In one embodiment, the above X A Respectively and independently are:

[0491] single bond,

[0492] C 1－20 Alkylene,

[0493] -(CH2) s5 -O-(CH2) t5 -

[0494] -(CH2) s5 -(Si(R 53 )2O) m5 -Si(R 53 )2-(CH2) t5 -

[0495] -(CH2) s5 -O-(CH2) u5-(Si(R 53 )2O) m5 -Si(R 53 )2-(CH2) t5 -,or

[0496] -(CH2) s5 -O-(CH2) t5 -Si(R 53 )2-(CH2) u5 -Si(R 53 )2-(C v H 2v )-

[0497] [Where R 53 , m5, s5, t5 and u5 have the same meanings as above, and v5 is an integer of 1 to 20, preferably an integer of 2 to 6, and more preferably an integer of 2 to 3. ].

[0498] In the above formula, -(C v H 2v )- may be a straight chain or a branched chain, for example, it may be -CH2CH2-, -CH2CH2CH2-, -CH(CH3)-, or -CH(CH3)CH2-.

[0499] The above X A can be independently selected from fluorine atoms, C 1－3 Alkyl and C 1－3 Fluorinated alkyl (preferably C 1－3 In one embodiment, X A For non-substitution.

[0500] In addition, the above X A The left side of each formula and R F1 or R F2 Bonding, right side with R Si Bonding.

[0501] In one embodiment, X A are independently -O-C 1－6 Other than alkylene.

[0502] In another embodiment, as X A , for example, the following groups can be cited:

[0503]

[0504] [Where R 41 are independently a hydrogen atom, a phenyl group, an alkyl group having 1 to 6 carbon atoms, or a C 1－6 Alkoxy, preferably methyl;

[0505] D is a group selected from the following groups:

[0506] -CH2O(CH2)2-,

[0507] -CH2O(CH2)3-,

[0508] -CF2O(CH2)3-,

[0509] -(CH2)2-,

[0510] -(CH2)3-,

[0511] -(CH2)4-,

[0512] -CONH-(CH2)3-,

[0513] -CON(CH3)-(CH2)3-,

[0514] -CON(Ph)-(CH2)3- (wherein Ph represents phenyl), and

[0515]

[0516] (Where R 42 Each independently represents a hydrogen atom, a C 1－6 Alkyl or C 1－6 The alkoxy group preferably represents a methyl group or a methoxy group, and more preferably represents a methyl group.)

[0517] E is -(CH2) n - (n is an integer from 2 to 6),

[0518] D and R of the main chain of the molecule F1 or R F2 Bonding, E and R Si Bonding.]

[0519] As the above X A Specific examples include:

[0520] single bond,

[0521] -CH2OCH2-,

[0522] -CH2O(CH2)2-,

[0523] -CH2O(CH2)3-,

[0524] -CH2O(CH2)4-,

[0525] -CH2O(CH2)5-,

[0526] <h2 style=";text-align:left;direction:ltr">-CH2O(CH2)6-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0527] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2OSi(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0528] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2OSi(CH3)2OSi(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0529] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)2Si(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0530] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)3Si(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0531] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)<h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> Si(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0532] <h2 style=";text-align:left;direction:ltr"> -CH2O(CH2)3Si(CH3)2O(Si(CH3)2O)<h2 style=";text-align:left;direction:ltr"> 20 <h2 style=";text-align:left;direction:ltr"> Si(CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0533] <h2 style=";text-align:left;direction:ltr"> CH2OCF2CHFOCF2<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0534] <h2 style=";text-align:left;direction:ltr"> -CH2OCF2CHFOCF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0535] <h2 style=";text-align:left;direction:ltr"> -CH2OCF2CHFOCF2CF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0536] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0537] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0538] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF2CF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0539] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF(CF3)CF2OCF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0540] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF(CF3)CF2OCF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0541] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CF2CF2OCF(CF3)CF2OCF2CF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0542] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CHFCF2OCF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0543] <h2 style=";text-align:left;direction:ltr">-CH2OCH2CHFCF2OCF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0544] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CHFCF2OCF2CF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0545] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CHFCF2OCF(CF3)CF2OCF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0546] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CHFCF2OCF(CF3)CF2OCF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0547] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CHFCF2OCF(CF3)CF2OCF2CF2CF2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0548] <h2 style=";text-align:left;direction:ltr"> -CH2OCF2CHFOCF2CF2CF2-C(O)NH-CH2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0549] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2(CH2)7CH2Si(OCH3)2OSi(OCH3)2(CH2)2Si(OCH3)2OSi(OCH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0550] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CH2CH2Si(OCH3)2OSi(OCH3)2(CH2)3-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0551] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CH2CH2Si(OCH2CH3)2OSi(OCH2CH3)2(CH2)3-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0552] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CH2CH2Si(OCH3)2OSi(OCH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0553] <h2 style=";text-align:left;direction:ltr"> -CH2OCH2CH2CH2Si(OCH2CH3)2OSi(OCH2CH3)2(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0554] <h2 style=";text-align:left;direction:ltr"> -(CH2)2-Si(CH3)2-(CH2)2-、<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0555] <h2 style=";text-align:left;direction:ltr"> CH2<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0556] <h2 style=";text-align:left;direction:ltr"> (CH2)2<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0557] <h2 style=";text-align:left;direction:ltr"> (CH2)3<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0558] <h2 style=";text-align:left;direction:ltr"> (CH2)4<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0559] <h2 style=";text-align:left;direction:ltr"> (CH2)5<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0560] <h2 style=";text-align:left;direction:ltr"> (CH2)6<h2 style=";text-align:left;direction:ltr"> <h2 style=";text-align:left;direction:ltr">

[0561] <h2 style=";text-align:left;direction:ltr"> CO<h2 style=";text-align:left;direction:ltr">

[0562] -CONH-,

[0563] -CONH-CH2-,

[0564] -CONH-(CH2)2-,

[0565] -CONH-(CH2)3-,

[0566] -CONH-(CH2)4-,

[0567] -CONH-(CH2)5-,

[0568] -CONH-(CH2)6-,

[0569] -CON(CH3)-CH2-,

[0570] -CON(CH3)-(CH2)2-,

[0571] -CON(CH3)-(CH2)3-,

[0572] -CON(CH3)-(CH2)4-,

[0573] -CON(CH3)-(CH2)5-,

[0574] -CON(CH3)-(CH2)6-,

[0575] -CON(Ph)-CH2- (wherein Ph represents a phenyl group),

[0576] -CON(Ph)-(CH2)2- (wherein Ph represents a phenyl group),

[0577] -CON(Ph)-(CH2)3- (wherein Ph represents a phenyl group),

[0578] -CON(Ph)-(CH2)4- (wherein Ph represents phenyl),

[0579] -CON(Ph)-(CH2)5- (wherein Ph represents a phenyl group),

[0580] -CON(Ph)-(CH2)6- (wherein Ph represents phenyl),

[0581] -CONH-(CH2)2NH(CH2)3-,

[0582] -CONH-(CH2)6NH(CH2)3-,

[0583] -CH2O-CONH-(CH2)3-、

[0584] -CH2O-CONH-(CH2)6-、

[0585] -S-(CH2)3-、

[0586] -(CH2)2S(CH2)3-、

[0587] -CONH-(CH2)3Si(CH3)2OSi(CH3)2(CH2)2-、

[0588] -CONH-(CH2)3Si(CH3)2OSi(CH3)2OSi(CH3)2(CH2)2-、 -CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)2Si(CH3)2(CH2)2-、 -CONH-(CH2)3Si(CH3)2O(Si(CH3)2O)3Si(CH3)2(CH2)2-、 -CONH-(CH2)3Si(CH3)2O(Si(CH3)2O) 10 Si(CH3)2(CH2)2-、 -CONH-(CH2)3Si(CH3)2O(Si(CH3)2O) 20 Si(CH3)2(CH2)2-、

[0589] -C(O)O-(CH2)3-、

[0590] -C(O)O-(CH2)6-、

[0591] -CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-(CH2)2-、

[0592] -CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-CH(CH3)-、

[0593] -CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-(CH2)3-、

[0594] -CH2-O-(CH2)3-Si(CH3)2-(CH2)2-Si(CH3)2-CH(CH3)-CH2-、

[0595] -OCH2-、

[0596] -O(CH2)3-、

[0597] -OCFHCF2-、

[0598] etc.

[0599] In another embodiment, X A Each independently has the formula: -(R 16 ) x1 -(CFR 17 ) y1 -(CH2) z1 - In the formula, x1, y1 and z1 are each independently an integer of 0 to 10, the sum of x1, y1 and z1 is 1 or more, and the order of existence of each repeating unit enclosed in parentheses is arbitrary in the formula.

[0600] In the above formula, R 16 Each occurrence is independently an oxygen atom, a phenylene group, a carbazolyl group, -NR 18 -(where R 18 represents a hydrogen atom or an organic group) or a divalent organic group. Preferably R 18 It is an oxygen atom or a divalent polar group.

[0601] The "divalent polar group" is not particularly limited, and examples thereof include -C(O)-, -C(=NR 19 )- and -C(O)NR 19 -(In these formulas, R 19 represents a hydrogen atom or a lower alkyl group). The "lower alkyl group" is, for example, an alkyl group having 1 to 6 carbon atoms, such as methyl, ethyl, and n-propyl, which may be substituted with one or more fluorine atoms.

[0602] In the above formula, R 17 Each occurrence is independently a hydrogen atom, a fluorine atom or a lower fluoroalkyl group, preferably a fluorine atom. The "lower fluoroalkyl group" is, for example, a fluoroalkyl group having 1 to 6 carbon atoms, preferably 1 to 3 carbon atoms, preferably a perfluoroalkyl group having 1 to 3 carbon atoms, more preferably a trifluoromethyl group or a pentafluoroethyl group, and still more preferably a trifluoromethyl group.

[0603] In another embodiment, as X A Examples include the following groups:

[0604]

[0605] [Wherein,

[0606] R 41 are independently a hydrogen atom, a phenyl group, an alkyl group having 1 to 6 carbon atoms, or a C 1－6 Alkoxy, preferably methyl;

[0607] In each X A In the base, any of the Ts are R F1 or R F2Bonded to the following groups:

[0608] -CH2O(CH2)2-,

[0609] -CH2O(CH2)3-,

[0610] -CF2O(CH2)3-,

[0611] -(CH2)2-,

[0612] -(CH2)3-,

[0613] -(CH2)4-,

[0614] -CONH-(CH2)3-,

[0615] -CON(CH3)-(CH2)3-,

[0616] -CON(Ph)-(CH2)3- (wherein Ph represents a phenyl group), or

[0617]

[0618] [Where R 42 are independently hydrogen atoms, C 1－6 Alkyl or C 1－6 The alkoxy group is preferably methyl or methoxy, and more preferably represents a methyl group. ],

[0619] The other T and R of the main chain of the molecule Si When the remaining T is independently methyl, phenyl, C 1－6 Alkoxy groups or free radical scavenging groups or UV absorbing groups.

[0620] The radical-trapping group is not particularly limited as long as it is a group that can trap free radicals generated by light irradiation, and examples thereof include residues of benzophenones, benzotriazoles, benzoates, phenyl salicylates, crotonic acids, malonic esters, organic acrylates, hindered amines, hindered phenols, or triazines.

[0621] The ultraviolet absorbing group is not particularly limited as long as it is a group that can absorb ultraviolet rays, and examples thereof include residues of benzotriazoles, hydroxybenzophenones, esters of substituted and unsubstituted benzoic acid or salicylic acid compounds, acrylates or alkoxycinnamates, oxamides, oxanilides, benzoxazinones, and benzoxazoles.

[0622] In a preferred embodiment, preferred free radical scavenging groups or ultraviolet absorbing groups include:

[0623]

[0624] In this embodiment, X A Each independently represents a tri- to decavalent organic group.

[0625] In another embodiment, as X A Examples include the following groups:

[0626]

[0627] [Where R 25 , R 26 and R 27 are each independently a divalent to hexavalent organic group,

[0628] R 25 With at least 1 R F1 Bonding, R 26 and R 27 Each with at least 1 R Si Bonding.]

[0629] In one embodiment, the above R 25 For a single bond, C 1－20 Alkylene, C 3－20 Cycloalkylene, C 5－20 Arylene, -R 57 -X 58 -R 59 -, -X 58 -R 59 -or-R 57 -X 58 -. The above R 57 and R 59 are independently a single bond, C 1－20 Alkylene, C 3－20 Cycloalkylene or C 5－20 The above X 58 It is -O-, -S-, -CO-, -O-CO- or -COO-.

[0630] In one embodiment, the above R 26 and R 27 are each independently a hydrocarbon group, or a group having at least one atom selected from N, O and S in the end or main chain of a hydrocarbon group, preferably C 1－6 Alkyl, -R 36 -R 37 -R 36 -, -R 36 -CHR 38 2-etc. Among them, R 36 Each of R is independently a single bond or an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms.37 is N, O or S, preferably N or O. 38 For -R 45 -R 46 -R 45 -, -R 46 -R 45 -or-R 45 -R 46 -. Among them, R 45 Each R is independently an alkyl group having 1 to 6 carbon atoms. 46 is N, O or S, preferably O.

[0631] In this embodiment, X A Each independently represents a tri- to decavalent organic group.

[0632] In another embodiment, as X A Examples include the following groups:

[0633]

[0634] [Wherein, X a is a single bond or a divalent organic group.]

[0635] The above X a is a single bond or a divalent linking group directly bonded to the isocyanuric ring. a , preferably a single bond, an alkylene group or a divalent group containing at least one bond selected from an ether bond, an ester bond, an amide bond and a thioether bond, more preferably a single bond, an alkylene group having 1 to 10 carbon atoms or a divalent organic group having 1 to 10 carbon atoms containing at least one bond selected from an ether bond, an ester bond, an amide bond and a thioether bond.

[0636] As X a , more preferably a group represented by the following formula:

[0637] -(CX 121 X 122 ) x1 -(X a1 ) y1 -(CX 123 X 124 ) z1 -

[0638] (Where X 121 ~X 124 are independently H, F, OH or -OSi(OR 121 )3(where 3 R 121 are each independently an alkyl group having 1 to 4 carbon atoms),

[0639] The above X a1-C(=O)NH-, -NHC(=O)-, -O-, -C(=O)O-, -OC(=O)-, -OC(=O)O-, or -NHC(=O)NH- (the left side of each bond is connected to CX 121 X 122 Bonding. ),

[0640] x1 is an integer from 0 to 10, y1 is 0 or 1, and z1 is an integer from 1 to 10. ).

[0641] As the above X a1 , preferably -O- or -C(=O)O-.

[0642] As the above X a , particularly preferably a group represented by the following formula:

[0643] -(CF2) m11 -(CH2) m12 -O-(CH2) m13 -

[0644] (wherein, m11 is an integer of 1 to 3, m12 is an integer of 1 to 3, and m13 is an integer of 1 to 3.)

[0645] -(CF2) m14 -(CH2) m15 -O-CH2CH(OH)-(CH2) m16 -

[0646] (wherein, m14 is an integer of 1 to 3, m15 is an integer of 1 to 3, and m16 is an integer of 1 to 3.)

[0647] -(CF2) m17 -(CH2) m18 -

[0648] (wherein, m17 is an integer from 1 to 3, and m18 is an integer from 1 to 3.)

[0649] -(CF2) m19 -(CH2) m20 -O-CH2CH(OSi(OCH3)3)-(CH2) m21 -

[0650] (wherein, m19 is an integer of 1 to 3, m20 is an integer of 1 to 3, and m21 is an integer of 1 to 3.) or

[0651] -(CH2) m22 -

[0652] (In the formula, m22 is an integer from 1 to 3.).

[0653] As X a , are not particularly limited, and specific examples include -CH2-, -C2H4-, -C3H6-, -C4H8-, -C4H8-O-CH2-, -CO-O-CH2-CH(OH)-CH2-, -(CF2) n5 -(n5 is an integer from 0 to 4), -(CF2) n5 -(CH2) m5 -(n5 and m5 are each independently an integer of 0 to 4), -CF2CF2CH2OCH2CH(OH)CH2-, -CF2CF2CH2OCH2CH(OSi(OCH3)3)CH2-, etc.

[0654] In this embodiment, X A Each independently is a divalent or trivalent organic group.

[0655] The fluorine-containing silane compound represented by the above formula (1) or formula (2) is not particularly limited, but may have a 2 ~1×10 5 In this range, the average molecular weight is preferably 2,000 to 32,000, and more preferably 2,500 to 12,000 from the viewpoint of wear durability. It should be noted that the "average molecular weight" refers to the number average molecular weight, and the "average molecular weight" is calculated by 19 The value measured by F-NMR.

[0656] The content of the fluorine-containing silane compound represented by the formula (1) or (2) is preferably 90% by mass to 100% by mass, and more preferably 95% by mass to 100% by mass, based on 100% by mass of the total of the fluorine-containing silane compounds.

[0657] The content of the fluorinated polyether group-containing silane compound is preferably 0.02 to 40.0% by mass, more preferably 0.02 to 30.0% by mass, even more preferably 0.04 to 25.0% by mass, and particularly preferably 0.05 to 20.0% by mass in 100% by mass of the surface treatment agent. By making the content of the fluorinated polyether group-containing silane compound within the above range, higher water and oil repellency can be obtained.

[0658] In the composition of the present invention, the nonvolatile component may be a portion obtained by removing the solvent from the total amount of the composition.

[0659] The content of the fluorinated silane compound is preferably 0.02 to 40.0% by mass, more preferably 0.02 to 30.0% by mass, even more preferably 0.04 to 25.0% by mass, and particularly preferably 0.05 to 20.0% by mass in 100% by mass of the surface treatment agent. By making the content of the fluorinated silane compound within the above range, higher water and oil repellency can be obtained.

[0660] The surface treatment agent may further contain a solvent. By containing a solvent, the operability of the composition can be improved. When such a composition is used to form a layer, the formed layer can become a continuous film. In addition, such a composition helps to form a film of any thickness.

[0661] The solvent is not particularly limited, but examples thereof include perfluoroaliphatic hydrocarbons having 5 to 12 carbon atoms (e.g., perfluorohexane, perfluoromethylcyclohexane, and perfluoro-1,3-dimethylcyclohexane); polyfluoroaromatic hydrocarbons (e.g., bis(trifluoromethyl)benzene); polyfluoroaliphatic hydrocarbons (e.g., C6F 13 CH2CH3 (for example, ASAHIKLIN (registered trademark) AC-6000 manufactured by Asahi Glass Co., Ltd.), 1,1,2,2,3,3,4-heptafluorocyclopentane (for example, ZEORORA (registered trademark) H manufactured by ZEON Corporation of Japan); hydrofluoroether (HFE) (for example, perfluoropropyl methyl ether (C3F7OCH3) (for example, Novec (registered trademark) 7000 manufactured by Sumitomo 3M Co., Ltd.), perfluorobutyl methyl ether (C4F9OCH3) (for example, Novec (registered trademark) 7000 manufactured by Sumitomo 3M Co., Ltd.); Alkyl perfluoroalkyl ethers (perfluoroalkyl and alkyl groups may be linear or branched), such as Novec (trademark) 7100, perfluorobutyl ethyl ether (C4F9OC2H5) (for example, Novec (trademark) 7200 manufactured by Sumitomo 3M Co., Ltd.), perfluorohexyl methyl ether (C2F5CF(OCH3)C3F7) (for example, Novec (trademark) 7300 manufactured by Sumitomo 3M Co., Ltd.), or CF3CH2OCF2CHF2 (for example, ASAHIKLIN (registered trademark) AE-3000 manufactured by Asahi Glass Co., Ltd.). These solvents can be used alone or as a mixture of two or more. Among them, hydrofluoroethers are preferred, and perfluorobutyl methyl ether (C4F9OCH3) and / or perfluorobutyl ethyl ether (C4F9OC2H5) are particularly preferred.

[0662] The boiling point (at atmospheric pressure) of the above-mentioned solvent may preferably be lower than 105°C, more preferably below 90°C, and even more preferably below 80°C. By having a boiling point in the above-mentioned range, the above-mentioned solvent is relatively easy to vaporize even without heating when the surface treatment agent of the present invention is applied to the substrate, thereby reducing the time and energy required for the surface treatment process. The lower limit of the boiling point is not particularly limited, for example, it may be above 30°C, and preferably above 50°C.

[0663] The content of the solvent is preferably 50 to 99.7% by mass, more preferably 60 to 99.7% by mass, even more preferably 70 to 99.7% by mass, and particularly preferably 80 to 99.7% by mass, based on 100% by mass of the total of the surface treatment agents.

[0664] The surface treatment agent of the present invention may further contain (non-reactive) fluorinated polyether compounds, preferably perfluoro (poly) ether compounds (hereinafter collectively referred to as "fluorinated oils"), (non-reactive) organosilicon compounds (hereinafter referred to as "silicone oils"), alcohols, catalysts, surfactants, polymerization inhibitors, sensitizers, etc. In addition, other components are components different from the above-mentioned fluorinated silane compounds and solvents.

[0665] The fluorine-containing oil is not particularly limited, and examples thereof include compounds represented by the following general formula (4) (perfluoro(poly)ether compound).

[0666] R 5 -(OC4F8) a” -(OC3F6) b” -(OC2F4) c” -(OCF2) d” -Rf 6 …(4)

[0667] In the formula, Rf 5 It indicates that C may be substituted with one or more fluorine atoms. 1－16 Alkyl (preferably C 1－16 perfluoroalkyl), Rf 6 It indicates that C may be substituted with one or more fluorine atoms. 1－16 Alkyl (preferably C 1－16 perfluoroalkyl), fluorine atom or hydrogen atom, Rf 5 and Rf 6 More preferably, each independently is C 1－3 Perfluoroalkyl.

[0668] a", b", c" and d" respectively represent the number of four repeating units of perfluoro(poly)ether constituting the main skeleton of the polymer, and are independently integers of 0 to 300. The sum of a", b", c" and d" is greater than 30, preferably 40 to 300, and more preferably 50 to 300. The order of existence of the repeating units marked with subscripts a", b", c" or d" and enclosed in parentheses in the formula is arbitrary. Among these repeating units, -(OC4F8)- may be any one of -(OCF2CF2CF2CF2)-, -(OCF(CF3)CF2CF2)-, -(OCF2CF(CF3)CF2)-, -(OCF2CF2CF(CF3))-, -(OC(CF3)2CF2)-, -(OCF2C(CF3)2)-, -(OCF(CF3)CF(CF3))-, -(OCF(C2F5)CF2)- and (OCF2CF(C2F5))-, and is preferably -(OCF2CF2CF2CF2)-. -(OC3F6)- may be any one of -(OCF2CF2CF2)-, -(OCF(CF3)CF2)- and (OCF2CF(CF3))-, and is preferably -(OCF2CF2CF2)-. -(OC2F4)- may be any of -(OCF2CF2)- and (OCF(CF3))-, but is preferably -(OCF2CF2)-.

[0669] Examples of the perfluoro(poly)ether compound represented by the general formula (4) include compounds represented by any one of the following general formulas (4a) and (4b) (the compounds may be one or a mixture of two or more).

[0670] R 5 -(OCF2CF2CF2) b” -Rf 6 …(4a)

[0671] R 5 -(OCF2CF2CF2CF2) a” -(OCF2CF2CF2) b” -(OCF2CF2) c” -(OC F2) d” -Rf 6 …(4b)

[0672] In these formulas, Rf 5 and Rf 6As described above; in formula (4a), b" is an integer greater than 1 and less than 100; in formula (4b), a" and b" are each independently an integer greater than 0 and less than 30, and c" and d" are each independently an integer greater than 1 and less than 300. The order of existence of each repeating unit marked with subscripts a", b", c", d" and enclosed in parentheses is arbitrary in the formula.

[0673] In addition, from another viewpoint, the fluorinated oil may be of the general formula Rf 3 -F(where Rf 3 C 5－16 In addition, it may be a chlorotrifluoroethylene oligomer.

[0674] The fluorine-containing oil may preferably have a number average molecular weight of 1000 or more, more preferably 1500 or more, and even more preferably 2000 or more. In addition, the fluorine-containing oil may preferably have a number average molecular weight of 30000 or less, more preferably 20000 or less, and even more preferably 10000 or less. The molecular weight of the fluorine-containing oil may be measured using GPC.

[0675] The fluorinated oil may contain, for example, 0 to 50% by mass, preferably 0 to 30% by mass, and more preferably 0 to 5% by mass relative to the surface treatment agent. In one embodiment, the surface treatment agent of the present invention contains substantially no fluorinated oil. Substantially containing no fluorinated oil means that the fluorinated oil is completely free of fluorinated oil or may contain a very small amount of fluorinated oil.

[0676] In one embodiment, the number average molecular weight of the fluorinated oil can be made smaller than the number average molecular weight of the fluorinated silane compound. By forming such an average molecular weight, the transparency of the surface treatment layer obtained by the compound can be suppressed, and a cured product with high wear durability and high surface slip properties can be formed.

[0677] The fluorine-containing oil contributes to improving the surface slip properties of the layer formed from the surface treatment agent of the present invention.

[0678] As the above-mentioned silicone oil, for example, a straight-chain or cyclic silicone oil having a siloxane bond of 2,000 or less can be used. The straight-chain silicone oil can be the so-called ordinary silicone oil (Straight silicone) and modified silicone oil. As ordinary silicone oil, dimethyl silicone oil, methylphenyl silicone oil, methyl hydrogen silicone oil can be listed. As modified silicone oil, silicone oil formed by modifying ordinary silicone oil using alkyl, aralkyl, polyether, higher fatty acid ester, fluoroalkyl, amino, epoxy, carboxyl, alcohol, etc. can be listed. Cyclic silicone oil, for example, cyclic dimethyl siloxane oil can be listed.

[0679] The surface treatment agent of the present invention may contain, for example, 0 to 300 parts by mass, preferably 50 to 200 parts by mass of the silicone oil, based on 100 parts by mass of the total of the fluorine-containing silane compound of the present invention (the total of these compounds when two or more are present, the same below).

[0680] Silicone oil helps to improve the surface slip properties of the surface treatment layer.

[0681] As the above-mentioned alcohols, for example, alcohols having 1 to 6 carbon atoms which may be substituted with one or more fluorine atoms, such as methanol, ethanol, isopropanol, tert-butyl alcohol, CF3CH2OH, CF3CF2CH2OH, (CF3)2CHOH can be cited. By adding these alcohols to the surface treatment agent, the stability of the surface treatment agent can be improved, and the compatibility of the fluorine-containing silane compound with the solvent can be improved.

[0682] In the surface treatment agent, the alcohol is preferably contained in an amount of 0.1 to 5 times, more preferably 0.5 to 3 times, and even more preferably 0.8 to 1.2 times the amount of the metal compound in terms of molar ratio. By making the content ratio of the alcohol within the above range, the stability of the surface treatment layer can be further improved.

[0683] Examples of the catalyst include acids (eg, acetic acid, trifluoroacetic acid, etc.), bases (eg, ammonia, triethylamine, diethylamine, etc.), and transition metals (eg, Ti, Ni, Sn, etc.).

[0684] The catalyst promotes the hydrolysis and dehydration condensation of the fluorine-containing silane compound of the present invention, and promotes the formation of a layer formed by the surface treatment agent of the present invention.

[0685] Examples of other components include tetraethoxysilane, methyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and methyltriacetoxysilane in addition to the above-mentioned components.

[0686] According to the present invention, a novel surface treatment method for a substrate having an anti-reflection film can be provided. In one embodiment, on a substrate having an anti-reflection film, the transparency of the substrate can be maintained, and the durability, especially the wear resistance, of the surface treatment layer can be improved. Therefore, the surface treatment method of the present invention is preferably applicable to various substrates, for example, preferably applicable to substrates in electronic devices.

[0687] Examples of the electronic device include portable terminal devices such as smartphones, tablet computers, notebook PCs, and cameras; wearable devices such as smart watches; and display devices such as televisions, liquid crystal displays, organic EL displays, and inorganic EL displays.

[0688] Example

[0689] The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto.

[0690] Production Example 1

[0691] A fluorine-containing compound represented by the following formula (average composition) was dissolved in hydrofluoroether (manufactured by 3M, NOVEC HFE7200) so as to have a concentration of 20 wt %, thereby preparing a surface treatment agent.

[0692] CF3O(CF2CF2O) 20 (CF2O) 16 CF2CH2OCH2CH2CH2Si[CH2CH2CH2Si(OCH3)3]3

[0693] As a substrate having an anti-reflection (AR) layer (hereinafter also referred to as an “AR substrate”), an AR substrate having a structure of glass substrate / Si3N4 / SiO2 / Si3N4 / SiO2 / Si3N4 / SiO2 (AR1 substrate) and an AR substrate having a structure of glass substrate / Si3N4 / SiO2 / Si3N4 / SiO2 / Si3N4 / SiO2 / Si3N4 / SiO2 (AR2 substrate) were used.

[0694] Comparative Example 1

[0695] Using a 1300φ vapor deposition apparatus manufactured by Optorun, the AR1 substrate was subjected to no surface smoothing treatment or SiO2 film formation, and only a surface treatment agent was vapor deposited.

[0696] Examples 1 to 3

[0697] Using a 1300φ vapor deposition apparatus manufactured by Optorun, the AR1 substrate was subjected to plasma treatment using only Ar gas under the conditions shown in Table 1, without forming a SiO2 film. The surface treatment agent was then vapor deposited.

[0698] Embodiments 4 to 14

[0699] Using a 1300φ vapor deposition apparatus manufactured by Optorun, the AR1 substrate was subjected to plasma treatment using Ar gas and SiO2 film formation under the conditions shown in Table 1, and then a surface treatment agent was vapor deposited.

[0700] Comparative Example 2

[0701] A 1900φ vapor deposition apparatus manufactured by Shincron Co., Ltd. was used to vapor-deposit a surface treatment agent only without performing any surface smoothing treatment or SiO2 film formation on the AR2 substrate.

[0702] Embodiment 15

[0703] Using a 1900φ vapor deposition apparatus manufactured by Shincron, the AR2 substrate was not subjected to SiO2 film formation, but only subjected to plasma treatment using O2 gas under the conditions shown in Table 1, and then a surface treatment agent was vapor deposited.

[0704] Examples 16 to 21

[0705] Using a 1900φ vapor deposition apparatus manufactured by Shincron Corporation, the AR2 substrate was subjected to plasma treatment using O2 gas and SiO2 film formation under the conditions shown in Table 1, and then a surface treatment agent was vapor deposited.

[0706] The treated substrates were evaluated as follows.

[0707] <Abrasion resistance>

[0708] The substrate forming the surface treatment layer is arranged horizontally, and steel wool (number #0000, size 10mm×10mm) is brought into contact with the exposed upper surface of the surface treatment layer, and a load of 1,000gf is applied thereto. Thereafter, the steel wool is reciprocated under the applied load (distance: 30mm (reciprocating), speed: 60rpm). After each certain number of reciprocations, the static contact angle (degrees) of water is measured. The evaluation is terminated when the measured value of the contact angle is less than 95 degrees. The number of reciprocations when the measured value becomes less than 95 degrees is shown in the following table.

[0709] <Optical properties>

[0710] The transmittance of the substrate having the surface treatment layer formed thereon was measured in accordance with ISO14782 using a haze meter NDH 7000SP (Nippon Denshoku Industries Co., Ltd.).

[0711] The results are shown below. In the table, "-" indicates that there is no measurement data.

[0712] [Table 1]

[0713]

[0714] It was confirmed in Examples 4 to 14 and 16 to 21 that after the AR substrate was subjected to plasma treatment, a layer containing SiO2 was formed, and then a surface treatment layer was formed, thereby obtaining a substrate with good wear resistance, good transparency and excellent optical properties.

[0715] In particular, in Examples 4 to 14 in which Ar was used as a processing gas for plasma irradiation to perform surface smoothing treatment, it was confirmed that a substrate having excellent wear resistance and optical characteristics was obtained by setting the plasma irradiation time to 700 seconds or less. In addition, it was confirmed in Examples 4 to 14 that particularly good wear resistance and optical characteristics could be obtained when the thickness of the layer containing SiO2 was in the range of 1 to 6 nm.

[0716] On the other hand, in Examples 18 to 23, in which surface smoothing treatment was performed by plasma irradiation using O2 as a processing gas, it was confirmed that a substrate having excellent wear resistance and optical characteristics was obtained by setting the plasma irradiation time to 180 to 600 seconds. In addition, in Examples 16 to 21, it was confirmed that particularly good wear resistance and optical characteristics could be obtained when the thickness of the layer containing SiO2 was in the range of 1 to 3 nm.

[0717] Industrial Applicability

[0718] According to the present invention, a novel surface treatment method for a substrate having an anti-reflection film can be provided. In one embodiment, on a substrate having an anti-reflection film, the transparency of the substrate can be maintained, and the durability, especially the wear resistance, of the surface treatment layer can be improved. Therefore, the surface treatment method of the present invention is preferably used for various substrates, such as substrates of electronic devices.

Claims

1. A method for treating a substrate having an anti-reflection film, characterized in that: include: A step of performing a treatment to smooth at least a portion of a surface of the anti-reflection film; The step of forming a layer containing SiO2 on the surface of the anti-reflection film after the treatment to smooth at least a part of the surface of the anti-reflection film; and A step of applying a surface treatment agent to at least a portion of the surface of the layer containing SiO 2 to form a surface treatment layer.

2. The processing method according to claim 1, characterized in that: The arithmetic mean roughness Ra1 of the surface of the SiO 2 -containing layer is 60% or less of the arithmetic mean roughness Ra0 of the surface of the antireflection film.

3. The processing method according to claim 1, characterized in that: The process of smoothing at least a portion of the surface of the antireflection film is an ion cleaning process.

4. The processing method according to claim 1, characterized in that: The treatment of smoothing at least a portion of the surface of the anti-reflection film and the formation of the layer containing SiO2 are implemented in the following manner: The amount C1 of OH groups on the surface of the SiO 2 -containing layer is set to be 1.4 times or more the amount C0 of OH groups on the surface of the antireflection film before the treatment for smoothing at least a portion of the surface of the antireflection film.

5. The processing method according to claim 1, characterized in that: The treatment of smoothing at least a portion of the surface of the antireflection film is performed by irradiating with plasma, The voltage during the plasma irradiation is 140V or more.

6. The processing method according to claim 1, characterized in that: The treatment of smoothing at least a portion of the surface of the antireflection film is performed by irradiating with plasma, The gas flow rate during the plasma irradiation is 40 sccm or more.

7. The processing method according to claim 1, characterized in that: The treatment of smoothing at least a portion of the surface of the antireflection film is performed by irradiating with plasma, The current during the plasma irradiation is 0.3 A or more.

8. The processing method according to claim 1, characterized in that: The treatment of smoothing at least a portion of the surface of the antireflection film is performed by irradiating with plasma, The plasma irradiation time during the plasma irradiation is 100 to 700 seconds.

9. The processing method according to claim 1, characterized in that: The SiO2-containing layer is formed by vapor deposition.

10. The processing method according to any one of claims 1 to 9, characterized in that: The surface treatment agent contains a fluorine-containing silane compound.

11. The processing method according to claim 10, characterized in that: The fluorine-containing silane compound comprises at least one fluorine-containing silane compound represented by the following formula (1) or (2): R F1 α -X A -R Si β (1) R Si γ -X A -R F2 -X A -R Si γ (2) In formula (1) and (2): R F1 Rf is independently 1 -R F -O q - or fluorinated alkyl; R F2 Rf 2 p -R F -O q - or fluoroalkylene; R 1 Each occurrence is independently C which may be substituted with one or more fluorine atoms 1－16 alkyl; R 2 C may be substituted with one or more fluorine atoms 1－6 Alkylene; R F Each occurrence is independently a divalent fluoropolyether group; p is 0 or 1; q is independently 0 or 1 at each occurrence; R Si Each occurrence is independently a monovalent group containing a Si atom to which a hydroxyl group, a hydrolyzable group, a hydrogen atom or a monovalent organic group is bonded; At least 1 R Si It is a monovalent group containing a Si atom to which a hydroxyl group or a hydrolyzable group is bonded; X A Each is independently a single bond or a 2- to 10-valent organic group; α is an integer from 1 to 9; β is an integer from 1 to 9; γ is an integer of 1-9 respectively independently.

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