Substrate support apparatus and substrate processing apparatus

Abstract

A substrate support apparatus includes: a base configured to place a substrate; and a movement mechanism connected to the base and configured to rotate the base about a central axis of the base, the central axis extending in a vertical direction, where the movement mechanism is configured to further move the base in a direction extending in an imaginary horizontal plane perpendicular to the central axis.

Description

Technical Field

[0001] The present invention relates to a substrate supporting device and a substrate processing device. Background Art

[0002] Substrate processing equipment is widely used for processing substrates, such as forming a thin film on a substrate. CVD equipment is called substrate processing equipment, which forms a thin film by depositing a substance produced by a chemical reaction of a raw material gas containing film components on the surface of a substrate to be processed (such as a silicon wafer). Plasma CVD equipment is widely used as CVD equipment. In a plasma CVD device, the raw material gas is placed in a plasma state to produce active excited molecules, free radicals and ions, thereby promoting chemical reactions. The plasma CVD device includes a wafer support device for supporting a wafer to be processed for film formation in a chamber. A shower head for supplying raw material gas to the interior of the chamber is arranged above the substrate support device. Plasma is generated by applying a radio frequency (RF) voltage between the shower head and the substrate support device.

[0003] CVD films deposited on wafers can also be cured using UV radiation to speed up the manufacturing process while reducing the thermal history of the wafer. For example, in the UV processing equipment described in US8203126B2, at least one of the UV lamp module and the substrate is rotated during the curing process to produce a pattern that provides high intensity and uniform exposure on the substrate (wafer). Summary of the invention

[0004] During film formation in a CVD apparatus, plasma density distribution, pumping efficiency, gas diffusion, etc. at each position on a substrate in a chamber vary. Therefore, it is difficult to make the film properties of a thin film formed on a substrate uniform. Therefore, it is conceivable to make the film properties of a thin film uniform by rotating a substrate support apparatus, for example, as in a UV treatment apparatus described in U.S. Patent No. 8,203,126 B2.

[0005] However, when the distribution of plasma density, pumping efficiency, gas diffusion, etc. adopts a normal distribution, that is, when the peak of the distribution is near the center of the substrate, even if the substrate support device rotates around the central axis of the substrate, the film properties of the thin film to be deposited cannot be made uniform in the radial direction of the substrate.

[0006] An object of the present invention is to provide a substrate supporting apparatus and a substrate processing apparatus capable of stably making the film characteristics of a thin film formed on a substrate uniform.

[0007] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the exemplary embodiments of the present disclosure below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0008] [First Aspect of the Invention]

[0009] A substrate support device comprises: a susceptor configured to place a substrate; and a moving mechanism connected to the susceptor and configured to rotate the susceptor around a central axis of the susceptor, the central axis extending in a vertical direction, wherein the moving mechanism is configured to further move the susceptor in a direction extending in an imaginary horizontal plane perpendicular to the central axis.

[0010] [Second Aspect of the Invention]

[0011] According to the substrate supporting apparatus of the first aspect, wherein the susceptor is configured to stop at any position within a moving range thereof extending in a direction extending in a horizontal plane.

[0012] [Third Aspect of the Invention]

[0013] A substrate supporting device according to the first or second aspect, wherein the moving mechanism includes: an external gear having teeth arranged side by side on its inner circumference; and an internal gear connected to a base having teeth arranged side by side on its outer circumference, the internal gear being configured to rotate in a state where the teeth are meshed with each other, wherein the number of teeth of the internal gear is less than the number of teeth of the external gear.

[0014] [Fourth Aspect of the Invention]

[0015] According to the substrate support apparatus of the third aspect, an arbitrary point on the susceptor moves along a trochoidal curve trajectory on an imaginary horizontal plane.

[0016] [Fifth Aspect of the Invention]

[0017] A substrate processing apparatus comprises: the substrate supporting apparatus according to any one of the first to fourth aspects; and a chamber accommodating a susceptor.

[0018] [Sixth Aspect of the Invention]

[0019] A substrate processing apparatus comprises: a substrate supporting apparatus according to the third or fourth aspect of the present invention; a chamber accommodating a susceptor; a lifting mechanism configured to vertically move the susceptor; and a driving source configured to drive the lifting mechanism.

[0020] [Seventh Aspect of the Invention]

[0021] A substrate processing apparatus according to a sixth aspect, wherein the external gear and the internal gear are placed outside the chamber.

[0022] [Eighth Aspect of the Invention]

[0023] The substrate processing apparatus according to the sixth or seventh aspect, wherein the driving source is further configured to rotate the internal gear.

[0024] [Ninth Aspect of the Invention]

[0025] A substrate processing apparatus according to any one of aspects 6 to 8, wherein the internal gear is configured to repeat forward and reverse rotations within an angular range of 180° or less around the central axis of the internal gear in the rotation direction of the internal gear around the central axis.

[0026] [Tenth Aspect of the Invention]

[0027] The substrate processing device according to the eighth or ninth aspect also includes a gear mechanism, which is configured to transmit the rotational driving force of the driving source to the internal gear, wherein the gear mechanism includes: an input shaft, which is configured to input the rotational driving force; and a plurality of output shafts, which are configured to input the rotational driving force into the input shaft and be branched and output, and a plurality of groups of bases and moving mechanisms are provided, and the internal gear of the moving mechanism in each group is connected to each input shaft.

[0028] [Eleventh Aspect of the Invention]

[0029] The substrate processing apparatus according to the tenth aspect further includes a connecting member connecting the internal gear and the output shaft, wherein the output shaft has a vertical shaft portion extending in the vertical direction, and the connecting member connects the internal gear and the vertical shaft portion which are eccentrically arranged to each other.

[0030] [Twelfth Aspect of the Invention]

[0031] According to the substrate processing equipment of the tenth or eleventh aspect, the gear mechanism includes: an input gear arranged on the input shaft; a ring gear configured to mesh with the input gear; a gear housing fixed to the ring gear; a pinion shaft supported by the gear housing; a pair of pinion gears rotatably supported by the pinion shaft; and a pair of half-shaft gears configured to mesh with the pair of pinion gears, and a pair of output gears arranged coaxially with the central axis of the ring gear are provided, and each half-shaft gear is arranged on each output gear.

[0032] [Thirteenth Aspect of the Invention]

[0033] According to a twelfth aspect of the substrate processing apparatus, the number of teeth of the ring gear is larger than the number of teeth of the input gear.

[0034] [Fourteenth Aspect of the Invention]

[0035] The substrate processing apparatus according to any one of the twelfth or thirteenth aspects, wherein the number of teeth of the pinion gear is the same as the number of teeth of the side gear.

[0036] [Fifteenth Aspect of the Invention]

[0037] The substrate processing apparatus according to any one of the tenth to fourteenth aspects further includes a locking mechanism configured to prevent one of the output shafts from rotating.

[0038] [Sixteenth Aspect of the Invention]

[0039] The substrate processing apparatus according to any one of the sixth to fifteenth aspects, wherein the substrate processing apparatus is a CVD apparatus configured to deposit a thin film on a substrate by a CVD method.

[0040] According to the substrate supporting apparatus and the substrate processing apparatus of aspects of the present invention, the film characteristics of a thin film formed on a substrate can be stably made uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0042] Figure 1 : is a longitudinal sectional view showing an example of a chamber of a plasma CVD apparatus according to an embodiment of the present invention.

[0043] Figure 2 FIG. 1 is a longitudinal cross-sectional view schematically and simply showing a plasma CVD apparatus and a substrate supporting apparatus provided in the plasma CVD apparatus according to an embodiment of the present invention.

[0044] Figure 3 Sub-figures (a) and (b) in the figure are plan views of the external gear and the internal gear of the moving mechanism, which are used to explain the revolution and rotation of the internal gear.

[0045] Figure 4A is a side view showing a simplified connection member.

[0046] Figure 4B is another side view showing a simplified connection member.

[0047] Figure 5 is a perspective view showing a simplified gear mechanism.

[0048] Figure 6 is a perspective view showing a simplified gear mechanism and a locking mechanism. DETAILED DESCRIPTION

[0049] Although certain embodiments and examples are disclosed below, it will be appreciated by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0050] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include substrates of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0051] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0052] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided by a continuous substrate feeding system to allow the continuous substrate to be manufactured and output in any suitable form.

[0053] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets on which discontinuous substrates are mounted.

[0054] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0055] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0056] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in other orders, or may be omitted in some cases.

[0057] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0058] In this embodiment, an XYZ orthogonal coordinate system (three-dimensional orthogonal coordinate system) is appropriately set in each of the accompanying drawings, and each component will be described. In each figure, the Z-axis direction corresponds to the up and down direction (vertical direction). In the Z-axis direction, the +Z side corresponds to the upper side, and the -Z side corresponds to the lower side. In addition, the X-axis direction and the Y-axis direction correspond to the direction in which an imaginary horizontal plane (XY plane) perpendicular to the Z-axis direction extends. For example, the Y-axis direction corresponds to the front-to-back direction, the +Y side corresponds to the rear side, and the -Y side corresponds to the front side. The X-axis direction corresponds to the left-to-right direction, the +X side corresponds to the right side, and the -X side corresponds to the left side. However, the Y-axis direction is not limited to this, the Y-axis direction can be the left-to-right direction, and the X-axis direction can be the front-to-back direction.

[0059] The substrate processing device of this embodiment is a CVD device for forming a thin film on a substrate (wafer) by CVD, specifically a plasma CVD device. Figure 1 and 2 As shown, the plasma CVD apparatus 100 includes a chamber 1, a substrate support device 30, a gear mechanism 50, a connecting member 60, a driving source 65, a locking mechanism 70 (see Figure 6 ) and a lifting mechanism 40. Figure 2 , the gear mechanism 50 is schematically shown in a simplified manner, and illustration of the shape of the connecting member 60 is omitted.

[0060] like Figure 1 As shown, the chamber 1 has a substantially cylindrical shape. The chamber 1 accommodates a base 31 of a substrate support device 30 described later. The chamber 1 has a chamber body 11, a cover member 19, a shower head fixing member 15, a shower head 20, a high frequency shielding plate 17, a gas supply pipe 24, and a gas exhaust pipe 25.

[0061] The chamber body 11 and the cover member 19 are made of a metal material. For example, aluminum can be used as such a metal material. The chamber body 11 has a cylindrical shape with a bottom. The cover member 19 is disc-shaped and closes the upper end of the chamber body 11. The chamber body 11 has an inlet / outlet 12, a door portion 13, and a recess 14.

[0062] The inlet / outlet 12 is arranged at the side of the chamber body 11. The inlet / outlet 12 is provided through the peripheral wall of the chamber body 11. The substrate Sb as a substrate to be processed is carried into or out of the chamber 1 through the inlet / outlet 12. The door portion 13 is configured to be able to open and close the door 12.

[0063] The recess 14 is arranged above the inlet / outlet 12 on the inner surface of the peripheral wall of the chamber body 11. The showerhead fixing member 15 is arranged in the recess 14. The showerhead fixing member 15 is an annular member having an opening 16. The opening 16 is an inverted tapered hole that passes through the showerhead fixing member 15 in the vertical direction, and the inner diameter of the lower part is smaller than the inner diameter of the upper part. As a material of the showerhead fixing member 15, for example, a ceramic material such as Al2O3 can be used.

[0064] The shower head 20 has a disc shape and is hollow inside. The shower head 20 has a vent hole 21. The vent hole 21 is arranged at the bottom of the shower head 20. The shower head 20 has a flange portion 22. The flange portion 22 is arranged at the upper portion of the shower head 20. The outer diameter of the flange portion 22 is larger than the inner diameter of the opening 16 of the shower head fixing member 15. The shower head 20 has an inverted truncated cone-shaped side surface 23 extending downward from the flange portion 22. The outer diameter of the side surface 23 at the bottom is smaller than the outer diameter of the top. The side surface 23 of the shower head 20 and the opening 16 of the shower head fixing member 15 are assembled to be in close contact with each other. As a material of the shower head 20, for example, a metal such as aluminum can be used.

[0065] The high-frequency shielding plate 17 has a disc shape. The high-frequency shielding plate 17 is arranged between the shower head 20 and the cover member 19. The flange portion 22 of the shower head 20 is sandwiched between the lower surface of the high-frequency shielding plate 17 and the upper surface of the shower head fixing part 15. As a material of the high-frequency shielding plate 17, for example, a ceramic material such as Al2O3 can be used.

[0066] The gas supply pipe 24 vertically passes through the cover member 19 and is connected to the upper center of the shower head 20. The raw material gas is supplied to the shower head 20 through the gas supply pipe 24. In addition, the raw material gas is supplied to the substrate Sb in the chamber 1 through the vent hole 21 of the shower head 20. The gas exhaust pipe 25 is arranged at the bottom of the chamber 1. The gas in the chamber 1 is discharged to the outside of the chamber 1 through the gas exhaust pipe 25.

[0067] The substrate support device 30 includes a susceptor 31 on which a substrate Sb is placed, and a moving mechanism 32 connected to the susceptor 31 and rotating the susceptor 31 around a central axis C of the susceptor 31 extending vertically. The moving mechanism 32 further moves the susceptor 31 in a direction extending in an imaginary horizontal plane (XY plane) perpendicular to the central axis C. In this embodiment, the plasma CVD apparatus 100 is provided with a set S chamber 1, a susceptor 31, and a moving mechanism 32. Figure 2 In the example shown, two groups S (S1, S2) are provided. However, the present invention is not limited thereto, and three or more groups (for example, four groups) S may be provided.

[0068] The susceptor 31 is arranged inside the chamber 1. The susceptor 31 has a disk shape centered on the central axis c. The substrate Sb is placed on the upper surface of the susceptor 31. The susceptor 31 may have a heating element inside so as to be used as a heater during film formation. The susceptor 31 is made of a highly thermally conductive material. The susceptor 31 is made of, for example, a metal material such as aluminum, and specifically made of aluminum nitride or the like.

[0069] like Figure 2 and Figure 3 As shown in sub-figures (a) and (b) in FIG. 1 , the moving mechanism 32 has a pillar 33, an outer gear 34, and an inner gear 35. The pillar 33 is arranged below the base 31 and supports the base 31. The pillar 33 has a columnar shape extending in the vertical direction. The upper end of the pillar 33 is connected to the lower center of the base 31. The pillar 33 is inserted into the through hole 18 opened in the bottom wall of the chamber body 11. The pillar 33 extends through the inside and outside of the chamber 1 through the through hole 18.

[0070] The outer gear 34 and the inner gear 35 are arranged below the chamber 1. That is, the outer gear 34 and the inner gear 35 are arranged outside the chamber 1. The outer gear 34 has an annular plate shape centered on the gear center axis A1. The outer gear 34 has teeth 34a arranged on its inner circumference. The teeth 34a are arranged side by side with equal pitches in the circumferential direction of the outer gear 34 around the gear center axis A1. Figure 3 In the example shown in sub-figures (a) and (b) in FIG. 8 , 12 teeth 34 a are provided on the inner circumference of the external gear 34 .

[0071] The internal gear 35 has a disc shape centered on the gear center axis A2. Figure 3 As shown in sub-figures (a) and (b) in FIG. 3 , when viewed in the vertical direction, the gear center axis A2 of the internal gear 35 is arranged at a position offset from the gear center axis A1 of the external gear 34. That is, the gear center axis A2 of the internal gear 35 and the gear center axis A1 of the external gear 34 are arranged eccentrically to each other.

[0072] The lower end of the support column 33 is connected to the upper center of the internal gear 35. The internal gear 35 is connected to the base 31 via the support column 33. The internal gear 35, the support column 33 and the base 31 are fixed to each other. The gear center axis A2 of the internal gear 35 and the center axis C of the base 31 are coaxially arranged with each other.

[0073] The internal gear 35 has teeth 35a arranged on its outer periphery. The teeth 35a are arranged side by side at equal pitches in the circumferential direction of the internal gear 35 around the gear center axis A2. The number of teeth of the internal gear 35 (the number of teeth 35a) is smaller than the number of teeth of the external gear 34 (the number of teeth 34a). Specifically, in this embodiment, the number of teeth of the internal gear 35 is one less than the number of teeth of the external gear 34. Figure 3In the example shown in sub-figures (a) and (b) of , 11 teeth 35 a are provided on the outer periphery of the internal gear 35 .

[0074] In this embodiment, the external gear 34 is fixed to the lifting mechanism 40 and does not rotate. The internal gear 35 is connected to the output shaft 52 (described later) of the gear mechanism 50 and rotates while meshing with the external gear 34. That is, the internal gear 35 rotates in the circumferential direction along the inner circumference of the external gear 34 while maintaining a state of meshing with the external gear 34.

[0075] Specifically, in Figure 3 In the state shown in sub-figure (a) in FIG. 1 , the gear center axis A2 of the internal gear 35 is located on the front side (-Y side) of the gear center axis A1 of the external gear. From this state, when the internal gear 35 rotates along the inner circumference of the external gear 34, the gear center axis A2 of the internal gear 35 rotates around the gear center axis A1 of the external gear 34, and the position moves to the rear side (+Y side) of the gear center axis A1 of the external gear 34, as shown in FIG. Figure 3 The inner gear 35 further rotates along the inner circumference of the outer gear 34 to achieve Figure 3 The state shown in sub-figure (a) in .

[0076] In this way, the gear center axis A2 of the internal gear 35 revolves around the gear center axis A1 of the external gear. In addition, when the internal gear 35 revolves along the inner circumference of the external gear 34, the internal gear 35 rotates according to the difference between the number of teeth of the external gear 34 and the number of teeth of the internal gear 35. It rotates around the gear center axis A2. In this embodiment, when the internal gear 35 revolves around the inner circumference of the external gear 34, it rotates by one tooth.

[0077] Since the internal gear 35 revolves and rotates relative to the external gear 34, the base 31 connected to the internal gear 35 also rotates while revolving in the chamber 1. Specifically, when the internal gear 35 and the base 31 are rotated around the gear center axis A from Figure 3 When the sub-figure (a) to the sub-figure (b) in FIG. 1 revolves 180°, the base 31 moves forward and backward by a distance D (in the Y-axis direction). Although not shown in the figure, when the internal gear 35 and the base 31 are in a phase (rotation angle) relative to each other about the gear center axis A1, Figure 3 When the sub-figures (a) and (b) in FIG. 1 are rotated 180° around the gear center axis A1 while being offset by 90°, the base 31 moves a distance D in the left-right direction (X-axis direction).

[0078] Specifically, any point on the base 31 moves along a trochoidal curve trajectory in the horizontal plane (XY plane). Therefore, the base 31 can move in the direction in which the horizontal plane extends.

[0079] In addition, if Figure 2 As shown, the space between the bottom wall of the chamber body 11 and the external gear 34 is hermetically sealed by a vertically expandable sealing member 26. Between the portion of the external gear 34 located above the teeth 34a and the portion of the internal gear 35 located above the teeth 35a, there is a seal that can expand and contract in a direction extending in the horizontal plane (XY plane). It is hermetically sealed by a member 27. The space between the internal gear 35 and the support 33 is hermetically sealed by a seal 28 such as an O-ring.

[0080] The driving source 65 is, for example, a motor. The driving source 65 drives the lifting mechanism 40. The lifting mechanism 40 is driven by the driving source 65 to vertically move the susceptor 31 via the moving mechanism 32. Specifically, when the substrate Sb is loaded into or unloaded from the chamber 1, the lifting mechanism 40 lowers the susceptor 31 to the lower end position. In addition, when a film forming process is performed on the substrate Sb by the CVD method, the lifting mechanism 40 raises the susceptor 31 to the lower end position. Figure 1 Upper position shown.

[0081] During film formation, the raw material gas is ejected from the vent hole 21 of the shower head 20 toward the substrate Sb, and a high frequency (RF) voltage is applied between the shower head 20 and the upper surface (substrate mounting surface) of the susceptor 31; and the raw material gas is brought into a plasma state. As a result, active excited molecules, free radicals, and ions are generated, chemical reactions are promoted, and a thin film is formed on the surface of the substrate Sb.

[0082] like Figure 2 As shown, the drive source 65 also drives the internal gear 35 to rotate. The gear mechanism 50 transmits the rotational driving force of the drive source 65 to the internal gear 35. The gear mechanism 50 has an input shaft 51 and an output shaft 52 to which the rotational driving force of the drive source 65 is input, and the rotational driving force input to the input shaft 51 is branched and output to the output shaft 52. In this embodiment, two output shafts 52 (52A, 52B) are provided. The internal gear 35 of each group S (S1, S2) of the moving mechanism 32 is connected to each output shaft 52 (52A, 52B).

[0083] The output shaft 52 has a horizontal shaft portion 53 and a vertical shaft portion 54. The horizontal shaft portion 53 extends in a direction perpendicular to the vertical direction. In the example shown, the horizontal shaft portion 53 extends in the X-axis direction. Figure 5 and 6 As shown, the horizontal shaft portion 53 has a locking portion 53a, which is locked by the locking mechanism 70. The locking portion 53a has a non-circular cross-section perpendicular to the central axis of the horizontal shaft portion 53, and in this embodiment, the locking portion 53a has a polygonal columnar shape, such as a quadrilateral columnar shape. Figure 2 In the figure, the locking portion 53a and the locking mechanism 70 are omitted.

[0084] like Figure 2 As shown, the vertical shaft portion 54 extends vertically. The vertical shaft portion 54 and the horizontal shaft portion 53 are connected via a pair of bevel gears 62 and 63 that mesh with each other. The center axis of the vertical shaft portion 54 and the gear center axis A2 of the internal gear 35 are parallel to each other and arranged eccentrically. The center axis of the vertical shaft portion 54 is coaxially arranged with the gear center axis A1 of the external gear 34.

[0085] The connecting member 60 connects the internal gear 35 and the output shaft 52. Specifically, the connecting member 60 connects the eccentrically arranged internal gear 35 and the vertical shaft portion 54. The connecting member 60 is composed of, for example Figure 4A The universal joint 60A shown, Figure 4B The ball joint 60B shown is configured. The connecting member 60 and the internal gear 35 are connected via a bearing (not shown) or the like.

[0086] like Figure 5 As shown, the gear mechanism 50 further includes an input gear 55 , a ring gear 56 , a gear housing 57 , a pinion shaft 58 , a pinion gear 59 , and side gears 61 .

[0087] The input gear 55 is provided on the input shaft 51. The ring gear 56 meshes with the input gear 55. The number of teeth of the ring gear 56 is greater than the number of teeth of the input gear 55. The gear housing 57 is fixed to the ring gear 56. The pinion shaft 58 is supported by the gear housing 57. The pinion shaft 58 extends in a direction orthogonal to the central axis of the ring gear 56 (a radial direction of the ring gear 56).

[0088] A pair of pinion gears 59 are provided on the pinion shaft 58. The pair of pinion gears 59 are spaced apart from each other in the radial direction of the ring gear 56. Each pinion gear 59 is rotatably supported on the pinion shaft 58.

[0089] A pair of side gears 61 are provided on the output shafts 52A and 52B. Each side gear 61 is fixed to the horizontal shaft portion 53 of each output shaft 52A, 52B. The pair of side gears 61 mesh with a pair of pinion gears 59. The number of teeth of the pinion gear 59 is the same as the number of teeth of the side gears 61. Each horizontal shaft portion 53 of the pair of output shafts 52A and 52B is arranged coaxially with the central axis of the ring gear 56.

[0090] In the gear mechanism 50, when a rotational driving force is input from the driving source 65 to the input shaft 51, the rotational driving force is converted into a rotational driving force around the central axis of the ring gear 56 via the input gear 55 and the ring gear 56. By the ring gear 56 rotating around its central axis, the gear housing 57, the pinion shaft 58, and the pair of pinion gears 59 rotate around the central axis of the ring gear 56.

[0091] When the pair of pinion gears 59 rotate (revolve) around the central axis of the ring gear 56, the pair of side gears 61 meshing with the pair of pinion gears 59 rotate around the central axis of the ring gear 56. As a result, the output shafts 52A and 52B to which the side gears 61 are fixed are rotationally driven around the central axis of the ring gear 56. In this way, the rotational driving force input to the input shaft 51 is branched and output to the (pair of) output shafts 52. The rotational speed of the output shaft 52 is determined by the gear ratio between the input gear 55 and the ring gear 56. As in the present embodiment, by making the number of teeth of the ring gear 56 larger than the number of teeth of the input gear 55, the rotational speed of the output shaft 52 can be kept low.

[0092] like Figure 6 As shown, the locking mechanism 70 can be locked to the locking portion 53a of the output shaft 52. Although not shown in the drawings, in this embodiment, a pair of locking mechanisms 70 are provided to face the locking portions 53a of the pair of output shafts 52A and 52B. Each locking mechanism 70 is configured to be able to advance and retreat relative to each locking portion 53a. The locking mechanism 70 restricts the rotation of a predetermined output shaft 52A or 52B of the output shafts 52A and 52B. Only one locking mechanism 70 may be provided.

[0093] exist Figure 6 In the example shown, the locking mechanism 70 is locked to the locking portion 53a of the output shaft 52B. As a result, the rotation of the output shaft 52B around the center axis is restricted, and the rotation of the internal gear 35 of the group S2 connected to the output shaft 52B is restricted, so that the base 31 of the group S2 rotates around the center axis C and the movement in the direction in which the horizontal plane (XY plane) becomes wider is restricted (see FIG. Figure 2 By using the locking mechanism 70, the base 31 can be stopped at any position within the moving range in the direction in which the horizontal plane extends.

[0094] In addition, Figure 6 , when the rotation of the output shaft 52B is stopped by the locking mechanism 70, the rotation of the side gear 61 provided on the output shaft 52B is also stopped. As a result, the pair of pinion gears 59 meshing with the side gear 61 rotate (revolve) around the central axis of the ring gear 56, and rotate (turn) around the central axis of the pinion shaft 58. As a result, the rotation speed of the output shaft 52A increases together with the side gear 61 provided on the output shaft 52A. Specifically, when the locking mechanism 70 is engaged with the engagement portion 53a, the number of rotations of the output shaft 52A is doubled compared to when the locking mechanism 70 is not engaged with the engagement portion 53a.

[0095] According to the substrate support device 30 and the plasma CVD device 100 of the present embodiment described above, the moving mechanism 32 connected to the susceptor 31 rotates (turns) the susceptor 31 around the central axis C and moves the susceptor 31; and moves the susceptor 31 in a direction extending in an imaginary horizontal plane (XY plane) perpendicular to the central axis C. Therefore, even if the distribution of plasma density, pumping efficiency, gas diffusion, etc. varies at each position of the substrate Sb in the chamber 1, the film characteristics of the thin film formed on the substrate Sb can be made uniform. In particular, even when the peak of the distribution of plasma density, pumping efficiency, gas diffusion, etc. is near the center of the substrate Sb (i.e., in a state of normal distribution), the film characteristics become uniform in the radial direction of the substrate (wafer).

[0096] Furthermore, in this embodiment, the susceptor 31 can be stopped at any position within the range of movement in the direction in which the horizontal plane (XY plane) extends. For example, when it is preferable to keep the susceptor 31 at any position in the horizontal plane (XY plane) in order to make the film characteristics of the thin film formed on the substrate Sb uniform, the movement of the susceptor 31 can be stopped. The movement and stop of the susceptor 31 can also be appropriately combined. The film characteristics of the thin film formed on the substrate Sb can be made more uniform.

[0097] Furthermore, in the present embodiment, the moving mechanism 32 has an external gear 34 and an internal gear 35, which rotates while meshing with the external gear 34 and is connected to the base 31. The number of teeth of the internal gear 35 is less than that of the external gear 34. In this case, when the internal gear 35 rotates relative to the external gear 34 and the gear center axis A2 of the internal gear 35 rotates once (revolves) around the gear center axis A1 of the external gear 34, the internal gear 35 rotates (turns) around the gear center axis A2 of the internal gear 35 by the difference in the number of teeth between the teeth 34a and 35a (one tooth in the present embodiment). That is, the internal gear 35 rotates around the gear center axis A2 of the internal gear 35 while revolving around the gear center axis A1 of the external gear 34. At the same time, the base 31 connected to the internal gear 35 also rotates while revolving in the chamber 1. Therefore, the base 31 can be stably moved in the direction extending in the horizontal plane (XY plane); and the film characteristics of the thin film formed on the substrate Sb can be made uniform with little variation at each position of the substrate Sb.

[0098] Furthermore, in this embodiment, the external gear 34 and the internal gear 35 are arranged outside the chamber 1. In this case, for example, even if metal chips or the like are generated due to the meshing of the external gear 34 and the internal gear 35, contamination problems in the chamber 1 can be prevented.

[0099] Furthermore, in this embodiment, the driving source 65 drives the lifting mechanism 40. Thus, when the substrate Sb is loaded into and unloaded from the chamber 1, the lifting mechanism 40 lifts and lowers the susceptor 31. In this embodiment, the driving source 65 is used to rotationally drive the internal gear 35. For example, in order to rotationally drive the internal gear 35, there is no need to provide a new motor or the like, and the equipment cost can be reduced.

[0100] In addition, in this embodiment, a gear mechanism 50 is provided to transmit the rotational driving force of the driving source 65 to the internal gear 35. The gear mechanism 50 has an input shaft 51 and an output shaft 52 (52A, 52B) to which the rotational driving force is input, and the rotational driving force input to the input shaft 51 is branched and output to the output shaft 52. A group S (S1, S2) of a base 31 and a moving mechanism 32 is provided, and the internal gear 35 of the moving mechanism 32 in the group S1, S2 is connected to the corresponding output shafts 52A, 52B. In this case, the rotational driving force of the driving source 65 is branched by the gear mechanism 50, and the branched rotational driving force is transmitted from the output shaft 52 (52A, 52B) to the group S (S1, S1, S2) of the moving mechanism 32 and the base 31. A single driving source 65 can rotate and move the base 31. A thin film having uniform film properties can be formed on each substrate Sb supported by the base 31.

[0101] Furthermore, in this embodiment, the internal gear 35 revolves around the gear center axis A1 of the external gear 34, and rotates around the gear center axis A2 of the internal gear 35. Because the internal gear 35 revolves, the gear center axis A2 of the internal gear 35 and the center axis (corresponding to the gear center axis A1) of the vertical shaft portion 54 of the output shaft 52 are arranged eccentrically from each other. By connecting the internal gear 35 and the vertical shaft portion 54 arranged with the center axes offset by a connecting member 60 such as a universal joint 60A or a ball joint 60B, the rotational driving force of the output shaft 52 can be stably transmitted to the internal gear 35.

[0102] In addition, the gear mechanism 50 of the present embodiment has a structure of a so-called differential device (differential gear). By using the gear mechanism 50, the rotational driving force input from the driving source 65 to the input shaft 51 can be stably output to the pair of output shafts 52A and 52B.

[0103] Furthermore, in this embodiment, a locking mechanism 70 is provided to restrict the rotation of a predetermined output shaft 52 among the output shafts 52. In this case, the base 31 connected to the output shaft 52 via the moving mechanism 32 can be stopped at any position in the horizontal plane (XY plane) by restricting the rotation of the predetermined output shaft 52 by the locking mechanism 70. By stopping the base 31 at a desired position or by combining movement and stopping, the film characteristics of the thin film formed on the substrate Sb can be made more uniform.

[0104] It should be noted that the present invention is not limited to the above-described embodiments, and changes in configuration may be made, for example, as described below, without departing from the gist of the present invention.

[0105] In the above embodiment, the plasma CVD device 100 is provided with two groups of S chambers 1, a base 31 and a moving mechanism 32, but the present invention is not limited thereto. For example, four groups of S may be provided. In this case, the rotational driving force of the driving source 65 is branched into two parts through a T-shaped angle (not shown), and the branched rotational driving force is input to a pair of gear mechanisms 50, and (a pair of) outputs are generated from each gear mechanism 50. The rotational driving force is output to shafts 52A and 52B. Thus, each base 31 of the four chambers 1 can be rotated around the central axis C by a driving source 65 and moved in a direction extending in a horizontal plane (XY plane).

[0106] Furthermore, the number of teeth 34a of the external gear 34 and the number of teeth 35a of the internal gear 35 are not limited to the numbers described in the above embodiment. Furthermore, the number of teeth of the internal gear 35 may be two or more less than the number of teeth of the external gear 34.

[0107] In addition, for example, by setting the rotation direction of the motor as the driving source 65 to forward or reverse rotation, the rotation direction in which the internal gear 35 rotates can be set to forward or reverse rotation. The rotation direction of the internal gear 35 around the gear center axis A2 can repeat forward and reverse rotation within an angle range of 180° or less around the gear center axis A2. By alternately reversing the rotation direction of the internal gear 35 within an angle range of 180° or less, the film characteristics of the thin film formed on the substrate Sb can become uniform and less varied at each position on the substrate Sb.

[0108] In the above embodiment, the film forming processing apparatus according to the present invention has been described by taking the plasma CVD apparatus 100 as an example, but the film forming processing apparatus is not limited to the plasma CVD apparatus 100. The substrate processing apparatus may be, for example, a thermal CVD apparatus, a plasma ALD apparatus, a thermal ALD apparatus, or the like.

[0109] Without departing from the gist of the present invention, the present invention can combine the configurations described in the above embodiments and modifications, and addition, omission, substitution and other modifications of the configurations are possible. In addition, the present invention is not limited to the above embodiments, etc., but is only limited by the scope of the claims.

[0110] [Industrial Applicability]

[0111] According to the substrate support apparatus and substrate processing apparatus of the present invention, the film characteristics of a thin film formed on a substrate can be stably uniformed, and therefore, it has industrial applicability.

[0112] Reference numerals list

[0113] 1: Room

[0114] 30: Substrate support equipment

[0115] 31: Base

[0116] 32: Mobile mechanism

[0117] 34: External gear

[0118] 34a: Tooth

[0119] 35: Internal gear

[0120] 35a: Tooth

[0121] 40: Lifting mechanism

[0122] 50: Gear mechanism

[0123] 51: Input shaft

[0124] 52 (52A, 52B): Output shaft

[0125] 54: Vertical axis

[0126] 55: Input gear

[0127] 56: Ring gear

[0128] 57: Gear housing

[0129] 58: Pinion shaft

[0130] 59: Small gear

[0131] 60 (60A, 60B): Connecting member

[0132] 61: Axle gear

[0133] 65: Driving source

[0134] 70: Locking mechanism

[0135] 100: Plasma CVD equipment (film forming equipment)

[0136] A1: Gear center axis of the external gear

[0137] A2: The center axis of the internal gear

[0138] C: The center axis of the base

[0139] S(S1, S2): Group

[0140] Sb: substrate

Claims

1. A substrate support device, comprising: a susceptor configured to hold a substrate; as well as a moving mechanism connected to the base and configured to rotate the base around a central axis of the base, the central axis extending in a vertical direction, wherein The moving mechanism is configured to further move the base in a direction extending within an imaginary horizontal plane perpendicular to the central axis.

2. The substrate support device according to claim 1, wherein: The base is configured to stop at any position within a moving range thereof extending in a direction extending in a horizontal plane.

3. The substrate supporting device according to claim 1, wherein: The moving mechanism comprises: an external gear with teeth placed side by side on its inner circumference; and An internal gear connected to the base, with teeth arranged side by side on its outer circumference, the internal gear being configured to rotate in a state where the teeth are meshed with each other, wherein The number of teeth on the internal gear is less than the number of teeth on the external gear.

4. The substrate supporting device according to claim 1, wherein: Any point on the base moves along a trochoidal curve trajectory on the imaginary horizontal plane.

5. A substrate processing device comprising: The substrate support device according to claim 1; as well as A chamber that houses the base.

6. A substrate processing device comprising: The substrate support device according to claim 3; a chamber for housing the base; a lifting mechanism configured to vertically move the base; as well as A drive source is configured to drive the lifting mechanism.

7. The substrate processing apparatus according to claim 6, wherein: The outer gear and the inner gear are placed outside the chamber.

8. The substrate processing apparatus according to claim 6, wherein: The drive source is also configured to rotate the internal gear.

9. The substrate processing apparatus according to claim 6, wherein: The internal gear is configured to repeat forward and reverse rotations within an angular range of 180° or less with the central axis of the internal gear as a center in a rotation direction of the internal gear about the central axis.

10. The substrate processing apparatus according to claim 8, further comprising a gear mechanism configured to transmit the rotational driving force of the driving source to the internal gear, wherein The gear mechanism includes: an input shaft configured to input a rotational driving force; and a plurality of output shafts configured for the rotational driving force input to the input shaft and branched out for output, Provide multiple sets of bases and moving mechanisms, and The internal gear of the moving mechanism in each group is connected to each input shaft.

11. The substrate processing apparatus according to claim 10, further comprising a connecting member connecting the internal gear and the output shaft, wherein: The output shaft has a vertical shaft portion extending in the vertical direction, and The connecting member connects the internal gear and the vertical shaft portion which are eccentrically arranged to each other.

12. The substrate processing apparatus according to claim 10, wherein: The gear mechanism comprises: An input gear disposed on the input shaft; a ring gear configured to mesh with the input gear; a gear housing fixed to the ring gear; a pinion shaft supported by the gear housing; a pair of pinion gears rotatably supported by the pinion shaft; and a pair of side gears configured to mesh with the pair of pinion gears, and providing a pair of output gears arranged coaxially with the central axis of the ring gear, and Each side gear is provided on each output gear.

13. The substrate processing apparatus according to claim 12, wherein: The number of teeth of the ring gear is greater than the number of teeth of the input gear.

14. The substrate processing apparatus according to claim 12, wherein: The number of teeth of the pinion gear is the same as the number of teeth of the side gear.

15. The substrate processing apparatus of claim 10, further comprising a locking mechanism configured to prevent one of the output shafts from rotating.

16. The substrate processing apparatus according to claim 6, wherein: The substrate processing apparatus is a CVD apparatus configured to deposit a thin film on a substrate by a CVD method.

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