Texturing additive for improving texturing appearance and improving efficiency of HJT battery and use method of texturing additive

Abstract

The invention discloses a texturing additive for improving texturing appearance and improving efficiency of an HJT battery and a use method of the texturing additive, and relates to the technical field of semiconductor etching texturing. The cleaning agent is prepared from 1, 3, 5-tris (2-hydroxyethyl) cyanuric acid, 2-(2-hydroxyethyl) guanidine, glycerophosphorylcholine, sodium camphorsulfonate, hyperbranched polyglycidyl and deionized water. The additive is good in texturing effect and high in efficiency under the condition of low weight loss, the texturing appearance of the HJT battery can be effectively improved, and the battery efficiency and filling factors of the HJT battery are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching texturing, and in particular to a texturing additive for improving the texturing appearance and efficiency of a HJT battery and a method of using the same. Background Art

[0002] In the HJT battery manufacturing process, there is a rough polishing process in the cleaning and texturing process, which is different from the perc / TopCon technology. The surface of the silicon wafer is flat after rough polishing. When using ordinary texturing additives on the market for texturing, the adsorption capacity of the texturing additives is insufficient, making the velvet pyramid uneven after texturing, resulting in a decrease in the filling factor; at the same time, the two sides of the silicon wafer are blocked by the teeth of the flower basket, and the texturing is not sufficient, which will cause the silicon wafer to have obvious flower basket teeth marks, and ultimately cause a significant increase in the appearance defect rate. In addition, the texturing additives on the market have more or less technical defects such as long texturing time, heavy texturing weight loss, low efficiency of HJT batteries made in the HJT battery process, and insufficient filling factor.

[0003] In order to solve the above problems, the Chinese invention patent with the authorization announcement number CN111326410B discloses an anti-basketball printing velvet liquid for HIT batteries and a velvet method thereof. The velvet liquid includes 0.1-5% of anti-basketball printing velvet additive, 0-0.5% of auxiliary velvet agent, 0.1-0.8% of pH buffer agent and the remainder is alkali solution according to the weight percentage. The invention is suitable for the velvet process of HIT batteries, which overcomes the defects of low production capacity, large amount of isopropanol and easy appearance defects such as basket printing in the existing HIT velvet technology. Therefore, it has the advantages of preventing basket printing, bubble column and other undesirable phenomena during silicon wafer velvet. At the same time, the pyramid size after velvet of the invention reaches 5-12um. Under the premise of maintaining a large pyramid, it effectively shortens the velvet time of silicon wafers and improves the production capacity of a single slot. In addition, it also has the advantages of reducing the weight loss of silicon wafers during velvet, reducing alkali consumption and extending the life of the velvet liquid. However, the cell efficiency and filling factor of HIT batteries velvetted by the velvet liquid still need to be further improved. Summary of the invention

[0004] The main purpose of the present invention is to provide a texturing additive and a method of using the same which has good texturing effect and high efficiency at low weight loss, can effectively improve the texturing appearance of HJT batteries, and improve the battery efficiency and filling factor of HJT batteries, and is used to improve the texturing appearance and efficiency of HJT batteries.

[0005] To achieve the above purpose, the present invention provides a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 0.5wt%-1wt% of a texturing nucleating agent, 0.5wt%-4wt% of a defoaming agent, 0.02wt%-2wt% of a dispersant, 0.1wt%-1wt% of a surfactant, 0.08wt%-0.15wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.01wt%-0.1wt% of 2-(2-hydroxyethyl)guanidine, 0.03wt%-0.12wt% of glycerol phosphorylcholine, 0.08wt%-0.15wt% of sodium camphorsulfonate, 0.1wt%-0.3wt% of a hyperbranched polyglycidol, and the balance being deionized water.

[0006] Preferably, the velvet nucleating agent is one or a combination of two or more of 2-hydroxypropyl-β-cyclodextrin, sodium 2-hydroxy-7-naphthalenesulfonate, and sodium dodecylbenzenesulfonate.

[0007] Preferably, the defoaming agent is one of chitosan, lily polysaccharide, alkyl glycoside, and maitake mushroom polysaccharide, or a combination of two or more thereof.

[0008] Preferably, the dispersant is sodium methyl naphthalene sulfonate, sodium methylene bis naphthalene sulfonate or a combination of the two.

[0009] Preferably, the surfactant is sodium lauryl sulfate, octylphenol polyoxyethylene ether, or a combination of two thereof.

[0010] Preferably, there is no special requirement for the source of the hyperbranched polyglycidol. In one embodiment of the present invention, the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and Properties of Hyperbranched Polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0011] Another object of the present invention is to provide a method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is 1-2wt% sodium hydroxide solution, the rough polishing time is 90-120s, and the rough polishing temperature is 70-80°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0012] Preferably, the mass ratio of the texturing additive to the alkali solution in step S2 is (0.35-0.6):100.

[0013] Preferably, the alkali solution in step S2 is a sodium hydroxide solution or a potassium hydroxide solution; the mass percentage concentration of the alkali solution is 0.5% to 2%.

[0014] Preferably, the front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 1% to 4%, and the mass percentage concentration of sodium hydroxide is 0.1% to 0.4%.

[0015] Preferably, the pre-cleaning temperature in step S3 is 55-65° C. and the time is 100-150 seconds.

[0016] Preferably, the texturing temperature in step S4 is 80-85° C., and the texturing time is 420-520 seconds.

[0017] Preferably, the alkaline solution of hydrogen peroxide in step S5 is an aqueous solution of potassium hydroxide containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 1-4%, and the mass percentage concentration of potassium hydroxide is 0.1-0.4%.

[0018] Preferably, the cleaning temperature of the hydrogen peroxide alkaline solution in step S5 is 55-65° C. and the cleaning time is 100-150 seconds.

[0019] Preferably, the acid used for the acid cleaning in step S5 is hydrofluoric acid or hydrochloric acid with a concentration of 1-4 mol / L.

[0020] Preferably, the acid cleaning in step S5 has a cleaning time of 90-180 seconds and a temperature of 23-30°C.

[0021] Due to the application of the above technical solution, the present invention has the following beneficial effects: (1) The method for using the texturing additive for improving the texturing appearance and improving the efficiency of HJT battery disclosed in the present invention has a simple process, convenient operation and control, low dependence on equipment and labor intensity, small impact on the environment, good texturing effect, high texturing efficiency, suitable for continuous large-scale production, and has high promotion and application value.

[0022] (2) The texturing additive for improving the texturing appearance and improving the efficiency of HJT batteries disclosed in the present invention comprises the following components calculated by mass percentage: 0.5wt%-1wt% of a texturing nucleating agent, 0.5wt%-4wt% of a defoaming agent, 0.02wt%-2wt% of a dispersant, 0.1wt%-1wt% of a surfactant, 0.08wt%-0.15wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.01wt%-0.1wt% of 2-(2-hydroxyethyl)guanidine, 0.03wt%-0.12wt% of glycerylphosphorylcholine, 0.08wt%-0.15wt% of sodium camphorsulfonate, 0.1wt%-0.3wt% of hyperbranched polyglycidol, and the balance being deionized water. Through the mutual coordination and joint action of various components, the texturing additive used to improve the texturing appearance of HJT batteries and improve their efficiency has good texturing effect and high efficiency at low weight loss, which can effectively improve the texturing appearance of HJT batteries and improve the battery efficiency and filling factor of HJT batteries. Compared with traditional HJT texturing additives, this additive has the advantages of good appearance after texturing, no basket tooth marks, uniform velvet pyramids, and less broken velvet.

[0023] (3) The texturing additive disclosed in the present invention for improving the appearance and efficiency of HJT battery texturing can greatly increase the dispersion effect of the texturing additive in the texturing tank through the reasonable selection of component types and dosage ratios, so that the additive is more evenly adsorbed on the surface of the silicon wafer, and the part blocked by the teeth of the flower basket is fully reacted, thereby obtaining a more uniform velvet surface and eliminating the flower basket tooth marks. At the same time, it can also achieve a better texturing effect with a smaller amount of addition, while ensuring the formation of the pyramid-shaped velvet surface, reducing the weight loss caused by excessive isotropic corrosion, that is, completing the formation of the pyramid under low weight loss, which is conducive to reducing costs and improving efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a SEM image of the silicon wafer surface after texturing in Example 1 of the present invention.

[0025] Figure 2 This is a SEM image of the silicon wafer surface after texturing in Example 2 of the present invention.

[0026] Figure 3 This is a SEM image of the silicon wafer surface after texturing in Comparative Example 1 of the present invention. DETAILED DESCRIPTION

[0027] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0028] Example 1, a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 0.5wt% of a texturing nucleating agent, 0.5wt% of a defoaming agent, 0.02wt% of a dispersant, 0.1wt% of a surfactant, 0.08wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.01wt% of 2-(2-hydroxyethyl)guanidine, 0.03wt% of glycerolphosphorylcholine, 0.08wt% of sodium camphorsulfonate, 0.1wt% of a hyperbranched polyglycidol, and the balance being deionized water.

[0029] The velvet nucleating agent is 2-hydroxypropyl-β-cyclodextrin; the defoaming agent is chitosan; the dispersant is sodium methylnaphthalene sulfonate; the surfactant is sodium dodecyl sulfate; the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and Properties of Hyperbranched Polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0030] A method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency comprises the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is 1wt% sodium hydroxide solution, the rough polishing time is 90s, and the rough polishing temperature is 70°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0031] The mass ratio of the texturing additive to the alkali solution in step S2 is 0.35:100; the alkali solution in step S2 is a sodium hydroxide solution; and the mass percentage concentration of the alkali solution is 0.5%.

[0032] The front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 1% and the mass percentage concentration of sodium hydroxide is 0.1%; the pre-cleaning temperature in step S3 is 55° C. and the time is 100 s.

[0033] The texturing temperature in step S4 is 80°C, and the texturing time is 420s; the alkaline solution of hydrogen peroxide in step S5 is an aqueous solution of potassium hydroxide containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 1%, and the mass percentage concentration of potassium hydroxide is 0.1%; the cleaning temperature of the alkaline solution of hydrogen peroxide in step S5 is 55°C, and the time is 100s; the acid used for acid cleaning in step S5 is hydrofluoric acid with a concentration of 1 mol / L; the cleaning time of the acid cleaning in step S5 is 90s, and the temperature is 23°C.

[0034] Example 2, a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 0.6wt% of a texturing nucleating agent, 1.5wt% of a defoaming agent, 0.2wt% of a dispersant, 0.3wt% of a surfactant, 0.1wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.03wt% of 2-(2-hydroxyethyl)guanidine, 0.05wt% of glycerolphosphorylcholine, 0.1wt% of sodium camphorsulfonate, 0.15wt% of a hyperbranched polyglycidol, and the remainder being deionized water.

[0035] The velvet nucleating agent is sodium 2-hydroxy-7-naphthalenesulfonate; the defoaming agent is lily polysaccharide; the dispersant is sodium methylene bisnaphthalenesulfonate; the surfactant is octylphenol polyoxyethylene ether; the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and Properties of Hyperbranched Polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0036] A method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency comprises the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is 1.2wt% sodium hydroxide solution, the rough polishing time is 100s, and the rough polishing temperature is 73°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0037] The mass ratio of the texturing additive to the alkali solution in step S2 is 0.4:100; the alkali solution in step S2 is a potassium hydroxide solution; and the mass percentage concentration of the alkali solution is 0.9%.

[0038] The front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 2% and the mass percentage concentration of sodium hydroxide is 0.2%; the pre-cleaning temperature in step S3 is 57° C. and the time is 110s.

[0039] The texturing temperature in step S4 is 81°C, and the texturing time is 440s; the alkaline solution of hydrogen peroxide in step S5 is an aqueous potassium hydroxide solution containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 2%, and the mass percentage concentration of potassium hydroxide is 0.2%; the cleaning temperature of the alkaline solution of hydrogen peroxide in step S5 is 57°C, and the time is 120s; the acid used for acid cleaning in step S5 is hydrochloric acid with a concentration of 2mol / L; the cleaning time of the acid cleaning in step S5 is 110s, and the temperature is 25°C.

[0040] Example 3, a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 0.75wt% of a texturing nucleating agent, 2.5wt% of a defoaming agent, 0.12wt% of a dispersant, 0.6wt% of a surfactant, 0.11wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.06wt% of 2-(2-hydroxyethyl)guanidine, 0.08wt% of glycerolphosphorylcholine, 0.11wt% of sodium camphorsulfonate, 0.2wt% of a hyperbranched polyglycidol, and the balance being deionized water.

[0041] The velvet nucleating agent is sodium dodecylbenzene sulfonate; the defoaming agent is alkyl glycoside; the dispersant is sodium methyl naphthalene sulfonate; the surfactant is sodium dodecyl sulfate; the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and Properties of Hyperbranched Polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0042] A method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency comprises the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is a 1.5wt% sodium hydroxide solution, the rough polishing time is 105s, and the rough polishing temperature is 75°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0043] The mass ratio of the texturing additive and the alkali solution in step S2 is 0.5:100; the alkali solution in step S2 is a potassium hydroxide solution; the mass percentage concentration of the alkali solution is 1.3%; the front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 2.5%, and the mass percentage concentration of sodium hydroxide is 0.25%; the pre-cleaning temperature in step S3 is 60°C and the time is 130s.

[0044] The texturing temperature in step S4 is 83°C, and the texturing time is 480s; the alkaline solution of hydrogen peroxide in step S5 is an aqueous solution of potassium hydroxide containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 2.5%, and the mass percentage concentration of potassium hydroxide is 0.25%; the cleaning temperature of the alkaline solution of hydrogen peroxide in step S5 is 60°C, and the time is 130s; the acid used for acid cleaning in step S5 is hydrofluoric acid with a concentration of 2.5mol / L; the cleaning time of the acid cleaning in step S5 is 130s, and the temperature is 26°C.

[0045] Example 4, a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 0.9wt% of a texturing nucleating agent, 3.5wt% of a defoaming agent, 0.18wt% of a dispersant, 0.9wt% of a surfactant, 0.13wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.09wt% of 2-(2-hydroxyethyl)guanidine, 0.1wt% of glycerolphosphorylcholine, 0.13wt% of sodium camphorsulfonate, 0.25wt% of a hyperbranched polyglycidol, and the remainder being deionized water.

[0046] The velvet nucleating agent is a mixture of 2-hydroxypropyl-β-cyclodextrin, sodium 2-hydroxy-7-naphthalenesulfonate, and sodium dodecylbenzenesulfonate in a mass ratio of 1:2:3; the defoaming agent is a mixture of chitosan, lily polysaccharide, alkyl glycoside, and maitake mushroom polysaccharide in a mass ratio of 1:1:3:1; the dispersant is a mixture of sodium methyl naphthalenesulfonate and sodium methylene bisnaphthalenesulfonate in a mass ratio of 3:5; the surfactant is a mixture of sodium dodecyl sulfate and octylphenol polyoxyethylene ether in a mass ratio of 1:3; the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and properties of hyperbranched polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0047] A method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency comprises the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is 1.8wt% sodium hydroxide solution, the rough polishing time is 110s, and the rough polishing temperature is 78°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0048] The mass ratio of the texturing additive and the alkali solution in step S2 is 0.55:100; the alkali solution in step S2 is a sodium hydroxide solution; the mass percentage concentration of the alkali solution is 1.8%; the front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 3.5%, and the mass percentage concentration of sodium hydroxide is 0.35%; the pre-cleaning temperature in step S3 is 63°C and the time is 140s.

[0049] The texturing temperature described in step S4 is 84°C, and the texturing time is 510s; the alkaline solution of hydrogen peroxide described in step S5 is an aqueous solution of potassium hydroxide containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 3.5%, and the mass percentage concentration of potassium hydroxide is 0.35%; the cleaning temperature of the alkaline solution of hydrogen peroxide described in step S5 is 63°C, and the time is 140s; the acid used for acid cleaning in step S5 is hydrochloric acid with a concentration of 3.5mol / L; the cleaning time of the acid cleaning in step S5 is 170s, and the temperature is 29°C.

[0050] Example 5, a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, comprising the following components calculated by mass percentage: 1wt% of a texturing nucleating agent, 4wt% of a defoaming agent, 2wt% of a dispersant, 1wt% of a surfactant, 0.15wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.1wt% of 2-(2-hydroxyethyl)guanidine, 0.12wt% of glycerolphosphorylcholine, 0.15wt% of sodium camphorsulfonate, 0.3wt% of hyperbranched polyglycidol, and the balance being deionized water.

[0051] The velvet nucleating agent is 2-hydroxypropyl-β-cyclodextrin; the defoaming agent is Grifola frondosa polysaccharide; the dispersant is sodium methylnaphthalene sulfonate; the surfactant is octylphenol polyoxyethylene ether; the preparation method of the hyperbranched polyglycidol refers to the preparation method of hPG-1 in the reference: Wang Zongsheng, Li Shaolu, Zhang Keming, Hu Yunxia. Synthesis and Properties of Hyperbranched Polyglycidol [J]. Journal of Functional Polymers, 2019, 32(4): 507-512.

[0052] A method for using the texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency comprises the following steps: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is a 2wt% sodium hydroxide solution, the rough polishing time is 120s, and the rough polishing temperature is 80°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

[0053] The mass ratio of the texturing additive and the alkali solution in step S2 is 0.6:100; the alkali solution in step S2 is a sodium hydroxide solution; the mass percentage concentration of the alkali solution is 2%; the front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 4%, and the mass percentage concentration of sodium hydroxide is 0.4%; the pre-cleaning temperature in step S3 is 65°C and the time is 150s; the texturing temperature in step S4 is 85°C and the texturing time is 520s.

[0054] The alkaline solution of hydrogen peroxide in step S5 is a potassium hydroxide aqueous solution containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 4%, and the mass percentage concentration of potassium hydroxide is 0.4%; the temperature of the alkaline solution of hydrogen peroxide cleaning in step S5 is 65° C., and the time is 150s; the acid used for the acid cleaning in step S5 is hydrofluoric acid with a concentration of 4 mol / L; the cleaning time of the acid cleaning in step S5 is 180s, and the temperature is 30° C.

[0055] Comparative Example 1 The present invention provides a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, and a method of using the same, which is similar to Example 1, except that 1,3,5-tris(2-hydroxyethyl)cyanuric acid and hyperbranched polyglycidol are not added.

[0056] Comparative Example 2 The present invention provides a texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, and a method of using the same, which is similar to Example 1, except that 2-(2-hydroxyethyl)guanidine and sodium camphorsulfonate are not added.

[0057] The texturing additives used to improve the texturing appearance and efficiency of HJT batteries involved in the above Examples 1-5 and Comparative Examples 1-2 were subjected to relevant performance tests. The test results are shown in Table 1. The test method is as follows: (1) The crystalline silicon wafers after alkali polishing in each case are put into the subsequent solar cell preparation process to be made into finished HJT cells. The electrical performance parameters of the cells are tested using a special test instrument for solar cells, such as a single flash simulator. The test conditions are standard test conditions (STC): light intensity 1000W / m 2 ; Spectrum AM1.5; Temperature 25℃; Test method is in accordance with IEC904-1, main electrical performance parameters of the cell: photoelectric conversion efficiency (Eta, unit: %), fill factor (FF, unit: %).

[0058] (2) Count and calculate the weight loss after velveting of each product.

[0059] At the same time, taking Example 1, Example 2 and Comparative Example 1 as examples, the surface of the silicon wafer after the texturing treatment was observed using a scanning electron microscope. Figure 1-Figure 3 ,from Figure 1-Figure 3 It can be seen that the product of the embodiment of the present invention has a better appearance after being velveted, has no basket-shaped tooth marks, has a more uniform velvet pyramid, and has less broken velvet.

[0060] Table 1

[0061] As can be seen from Table 1, the texturing additive for improving the texturing appearance and improving the efficiency of HJT batteries disclosed in the embodiments of the present invention has a more excellent low weight loss texturing effect compared with the comparative products, and the prepared HJT batteries have higher filling factors and photoelectric conversion efficiency; the addition of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, hyperbranched polyglycidol, 2-(2-hydroxyethyl)guanidine and sodium camphorsulfonate is beneficial to improving the above properties.

[0062] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. A texturing additive for improving the texturing appearance of HJT batteries and improving their efficiency, characterized in that: The invention comprises the following components calculated by mass percentage: 0.5wt%-1wt% of suede nucleating agent, 0.5wt%-4wt% of defoaming agent, 0.02wt%-2wt% of dispersing agent, 0.1wt%-1wt% of surfactant, 0.08wt%-0.15wt% of 1,3,5-tris(2-hydroxyethyl)cyanuric acid, 0.01wt%-0.1wt% of 2-(2-hydroxyethyl)guanidine, 0.03wt%-0.12wt% of glycerol phosphorylcholine, 0.08wt%-0.15wt% of sodium camphorsulfonate, 0.1wt%-0.3wt% of hyperbranched polyglycidol, and the balance is deionized water.

2. The texturing additive for improving the texturing appearance and improving the efficiency of HJT batteries according to claim 1, characterized in that: The velvet nucleating agent is one of 2-hydroxypropyl-β-cyclodextrin, sodium 2-hydroxy-7-naphthalenesulfonate, sodium dodecylbenzenesulfonate, or a combination of two or more thereof; the defoaming agent is one of chitosan, lily polysaccharide, alkyl glycoside, and maitake mushroom polysaccharide, or a combination of two or more thereof.

3. The texturing additive for improving the texturing appearance and improving the efficiency of HJT battery according to claim 1, characterized in that: The dispersant is one of sodium methyl naphthalene sulfonate and sodium methylene bisnaphthalene sulfonate or a combination of the two; the surfactant is one of sodium dodecyl sulfate and octylphenol polyoxyethylene ether or a combination of the two.

4. A method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to any one of claims 1 to 3, characterized in that: The steps include: Step S1, after uniformly mixing the various components of the texturing additive for improving the texturing appearance and efficiency of HJT batteries, a texturing additive for improving the texturing appearance and efficiency of HJT batteries is obtained; Step S2, adding the texturing additive prepared in step S1 for improving the texturing appearance and efficiency of HJT battery into the alkali solution and stirring evenly to obtain a texturing solution; Step S3, placing the cut thin single crystal silicon wafer in a rough polishing tank for rough polishing to remove the damaged layer, the solution in the rough polishing tank is 1-2wt% sodium hydroxide solution, the rough polishing time is 90-120s, and the rough polishing temperature is 70-80°C; then placing the cut single crystal silicon wafer in a front hydrogen peroxide tank for pre-cleaning, and then placing it in deionized water to clean the silicon wafer; Step S4, immersing the silicon wafer processed in step S3 into a texturing solution for texturing; Step S5, sequentially wash the silicon wafer after the texturing in step S4 with deionized water, alkaline solution of hydrogen peroxide, deionized water, acid, and deionized water; then immerse it in deionized water at 85°C and slowly pull it out, and place the texturing crystalline silicon wafer in a drying oven for drying.

5. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The mass ratio of the texturing additive and the alkali solution in step S2 is (0.35-0.6):100; the alkali solution in step S2 is a sodium hydroxide solution or a potassium hydroxide solution; the mass percentage concentration of the alkali solution is 0.5% to 2%.

6. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The front hydrogen peroxide tank in step S3 contains a pre-prepared cleaning solution, which is a mixed aqueous solution of hydrogen peroxide and sodium hydroxide, wherein the mass percentage concentration of hydrogen peroxide is 1% to 4%, and the mass percentage concentration of sodium hydroxide is 0.1% to 0.4%.

7. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The pre-cleaning temperature in step S3 is 55-65°C, and the time is 100-150s; the texturing temperature in step S4 is 80-85°C, and the texturing time is 420-520s.

8. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The alkaline solution of hydrogen peroxide in step S5 is a potassium hydroxide aqueous solution containing hydrogen peroxide, wherein the mass percentage concentration of hydrogen peroxide is 1-4%, and the mass percentage concentration of potassium hydroxide is 0.1-0.4%.

9. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The temperature of the hydrogen peroxide alkaline solution cleaning in step S5 is 55-65° C. and the time is 100-150 seconds.

10. The method for using the texturing additive for improving the texturing appearance and efficiency of HJT batteries according to claim 4, characterized in that: The acid used for the acid cleaning in step S5 is hydrofluoric acid or hydrochloric acid with a concentration of 1-4 mol / L; the cleaning time of the acid cleaning in step S5 is 90-180 s, and the temperature is 23-30°C.

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