Semiconductor memory device and method for manufacturing the same

Abstract

The present application provides a semiconductor memory device and a manufacturing method thereof, which relates to the field of semiconductor technology and is used to solve the problem of poor anti-magnetic ability of semiconductor memory devices. The semiconductor memory device includes: a magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit stacked in sequence; the free layer in the magnetic tunnel junction unit is arranged adjacent to the spin-orbit moment layer; the long axis directions of the magnetic layer and the free layer are parallel to each other, and by applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer. The embodiment of the present application can use the magnetic layer to offset the weakening anti-magnetic ability of the stray field and promote the strengthening anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor memory device and a method for manufacturing the same. Background Art

[0002] With the continuous development of semiconductor technology, non-volatile spin orbit torque magnetic memory (Spin Orbit Torque-Magnetic Random Access Memory, SOT-MRAM) has the characteristics of low power consumption, high read and write speed, and good durability. It shows broad application prospects in the fields of Internet of Things, edge AI devices, high-performance computing and automobiles.

[0003] SOT-MRAM includes a magnetic tunnel junction (MTJ) for storing data and a spin-orbit torque layer for providing a spin-orbit torque (SOT) effect. When a write current is applied to the spin-orbit torque layer, a spin-orbit coupling effect is generated, thereby generating a spin torque, which drives the free layer in the magnetic tunnel junction to produce a directional flip, thereby writing data.

[0004] However, the working principle of the above-mentioned semiconductor memory device relies on the spin-orbit moment (SOT) effect. The external magnetic field and the stray field inside the device will interfere with the spin arrangement of the magnetic functional layer, resulting in poor magnetic resistance of the semiconductor memory device, thereby causing the stability and reliability of the data stored in the semiconductor memory device to be low. Summary of the invention

[0005] In view of the above problems, an embodiment of the present application provides a semiconductor memory device and a method for manufacturing the same, which are used to improve the magnetic resistance of the semiconductor memory device, thereby improving the stability and reliability of data storage in the semiconductor memory device.

[0006] According to some embodiments, the present application provides a semiconductor memory device, comprising: a magnetic layer, a spin-orbit moment layer, and a magnetic tunnel junction unit stacked in sequence;

[0007] The free layer in the magnetic tunnel junction unit is arranged adjacent to the spin-orbit moment layer;

[0008] The long axis directions of the magnetic layer and the free layer are parallel to each other. By applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer.

[0009] In some possible implementations, a major axis length of the magnetic layer is greater than a major axis length of the free layer.

[0010] In some possible implementations, the magnetic layer and the free layer are in an elliptical, rectangular or diamond shape.

[0011] In some possible implementations, a projection of the magnetic layer on the spin-orbit moment layer at least partially overlaps with a projection of the free layer on the spin-orbit moment layer.

[0012] In some possible implementations, the magnitude of the magnetic moment generated by the magnetic layer under the action of the spin-orbit moment layer is positively correlated with the major axis length of the magnetic layer.

[0013] In some possible implementations, the magnetic layer weakens the stray field by applying a first write current to the spin-track moment layer, wherein the first write current has a current component parallel to the short axis direction of the magnetic layer.

[0014] In some possible implementations, the magnetic layer enhances the stray field by applying a second write current to the spin-orbit moment layer, wherein the second write current has a current component in a direction opposite to that of the first write current.

[0015] The semiconductor memory device provided by the embodiments of the present application has at least the following advantages:

[0016] The semiconductor memory device provided by the embodiment of the present application includes a magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit, wherein the magnetic layer, the spin-orbit moment layer and the magnetic tunnel junction unit are stacked in sequence, and the free layer in the magnetic tunnel junction unit is arranged adjacent to the spin-orbit moment layer. The long axis directions of the magnetic layer and the free layer are parallel to each other, and by applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are opposite, so as to adjust the stray field of the semiconductor memory device, so that the magnetic moment generated after the magnetization of the magnetic layer offsets the weakening anti-magnetic ability of the stray field, and promotes the strengthening anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device, and further improving the stability and reliability of the semiconductor memory device.

[0017] According to some embodiments, the present application also provides a method for manufacturing a semiconductor memory device, which includes: forming a stacked magnetic layer, a spin-orbit moment layer, and a magnetic tunnel junction unit;

[0018] Wherein, the free layer in the formed magnetic tunnel junction unit is adjacent to the spin-orbit moment layer;

[0019] The long axis directions of the formed magnetic layer and the free layer are parallel to each other. By applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer.

[0020] In some possible implementations, the formation of stacked magnetic layers, spin-orbit moment layers, and magnetic tunnel junction units includes:

[0021] forming a magnetic film layer, removing part of the magnetic film layer so that the aspect ratio of the remaining magnetic film layer is greater than 1;

[0022] Sequentially forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer on the remaining magnetic film layer, with part of the spin-orbit moment film layer covering the side wall of the magnetic film layer;

[0023] The spin-orbit moment film layer and the magnetic tunnel junction film layer are etched to form the spin-orbit moment layer and the magnetic tunnel junction unit.

[0024] In some possible implementations, the forming of the magnetic layer, the spin-orbit moment layer and the magnetic tunnel junction unit includes:

[0025] forming a magnetic film layer, removing part of the magnetic film layer so that the aspect ratio of the remaining magnetic film layer is greater than 1;

[0026] forming a dielectric layer on both sides of the remaining magnetic film layer, wherein the upper surface of the dielectric layer is flush with the upper surface of the magnetic film layer;

[0027] Sequentially forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer on the remaining magnetic film layer and the dielectric layer;

[0028] The spin-orbit moment film layer and the magnetic tunnel junction film layer are etched to form the spin-orbit moment layer and the magnetic tunnel junction unit.

[0029] The method for manufacturing a semiconductor memory device provided in the embodiment of the present application has at least the following advantages:

[0030] The manufacturing method of the semiconductor memory device provided in the embodiment of the present application forms a stacked magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit; wherein the free layer in the formed magnetic tunnel junction unit is adjacent to the spin-orbit moment layer; the long axis directions of the formed magnetic layer and the free layer are parallel to each other, and by applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are opposite, so as to adjust the stray field of the semiconductor memory device, so that the magnetic moment generated after the magnetic layer is magnetized can offset the weakening anti-magnetic ability of the stray field and promote the strengthening anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device, and improving the stability and reliability of the semiconductor memory device. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic structural diagram of a semiconductor memory device in an embodiment of the present application;

[0032] Figure 2 is a top view of a semiconductor memory device in an embodiment of the present application;

[0033] Figure 3 A state diagram of a semiconductor memory device in an embodiment of the present application;

[0034] Figure 4 is another state diagram of the semiconductor memory device in the embodiment of the present application;

[0035] Figure 5 A schematic diagram of a method for manufacturing a semiconductor memory device in an embodiment of the present application;

[0036] Figure 6 A diagram showing a manufacturing process of a magnetic film layer in an embodiment of the present application;

[0037] Figure 7 A diagram showing a manufacturing process of a magnetic tunnel junction film layer in an embodiment of the present application;

[0038] Figure 8 A diagram of a manufacturing process of a magnetic tunnel junction unit in an embodiment of the present application;

[0039] Fig. 9 A comparison diagram of the magnetic film layer before and after the spin-orbit moment film layer is etched in the embodiment of the present application;

[0040] Fig.10 Another schematic diagram of a method for manufacturing a semiconductor memory device in an embodiment of the present application;

[0041] Fig.11 A diagram showing a manufacturing process of a magnetic film layer in an embodiment of the present application;

[0042] Fig.12Another process diagram of manufacturing the magnetic tunnel junction film layer in the embodiment of the present application;

[0043] Fig.13 Another manufacturing process diagram of the magnetic tunnel junction unit in the embodiment of the present application;

[0044] Fig.14 This is another comparison diagram of the spin-orbit moment film layer before and after etching in the embodiment of the present application.

[0045] Description of reference numerals:

[0046] 10-magnetic layer; 11-magnetic film layer;

[0047] 20-spin-orbit moment layer; 21-spin-orbit moment film layer;

[0048] 30-magnetic tunnel junction unit; 31-free layer;

[0049] 32-barrier layer; 33-reference layer;

[0050] 34-pinning layer; 35-magnetic tunnel junction layer;

[0051] 40 - top electrode layer; 50 - dielectric layer. DETAILED DESCRIPTION

[0052] The semiconductor memory devices in the related art have poor anti-magnetic ability. The reasons are as follows: the working principle of the semiconductor memory device relies on the spin-orbit moment (SOT) effect, and the external magnetic field interferes with the spin arrangement of the magnetic functional layer, resulting in poor anti-magnetic ability of the semiconductor memory device; and after the magnetization direction of the reference layer is fixed, a stray field with a fixed direction will be generated inside the semiconductor memory device, making the semiconductor memory device more susceptible to the influence of an external magnetic field in a certain direction, further reducing its anti-magnetic ability, thereby causing the stability and reliability of the data stored in the semiconductor memory device to be low.

[0053] In order to increase the anti-magnetic ability of semiconductor memory devices, the prior art adds a control layer in the opposite direction of the stray field inside the semiconductor memory device, and quantitatively fixes the magnitude and direction of the field moment by changing the annealing conditions, material selection, and size design of such a control layer to offset the influence of the stray field. Therefore, the control layer has high requirements for annealing conditions and size, and the process is difficult.

[0054] To this end, an embodiment of the present application provides a semiconductor memory device, which includes a magnetic layer, a spin-orbit moment layer, and a magnetic tunnel junction unit stacked in sequence, wherein the long axis directions of the magnetic layer and the free layer are parallel to each other. By applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are opposite, so as to adjust the stray field of the semiconductor memory device, so that the magnetic moment generated after the magnetic layer is magnetized regulates the stray field, offsets the weakening anti-magnetic ability of the stray field, and promotes the strengthening anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device, and further improving the stability and reliability of the semiconductor memory device.

[0055] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the scope of protection of this application.

[0056] See also Figure 1 The present invention provides a semiconductor memory device, which includes a magnetic layer 10, a spin-orbit moment layer 20 and a magnetic tunnel junction unit 30, wherein the magnetic layer 10, the spin-orbit moment layer 20 and the magnetic tunnel junction unit 30 are stacked in sequence. The magnetic layer 10 and the magnetic tunnel junction unit 30 are respectively located on both sides of the spin-orbit moment layer 20 and are in contact with the spin-orbit moment layer 20. Figure 1 As shown, the magnetic layer 10 is located on the lower surface (ie, the bottom surface) of the spin-track moment layer 20 , and the magnetic tunnel junction unit 30 is located on the upper surface (ie, the top surface) of the spin-track moment layer 20 .

[0057] Among them, the spin-orbit moment layer 20 can generate polarization current when current flows through it to generate torque, so that the free layer 31 and the reference layer 33 in the magnetic tunnel junction unit 30 are parallel or anti-parallel, so that the magnetic tunnel junction unit 30 is in a high resistance state or a low resistance state. In this way, the spin-orbit moment layer 20 uses current to drive the magnetization flip of the corresponding film layer, and the information writing speed is fast, the power consumption is low, the durability is high, and the stability is good.

[0058] The spin-orbit moment layer 20 may be a single layer or a stacked layer, and the material of the spin-orbit moment layer 20 is a conductive material with a strong spin-orbit coupling effect. Exemplarily, the spin Hall angle of the spin-orbit moment layer 20 may be positive, for example, the material of the spin-orbit moment layer 20 includes Pt, Pd, Hf, Au, AuPt, PtHf, PtCr, PtMn, FeMn, NiMn, etc.

[0059] As another example, the spin Hall angle of the spin-orbit moment layer 20 may also be negative, for example, the material of the spin-orbit moment layer 20 includes Ta, W, Ir, IrMn, WOx, WN, WON, TaN, TaB, etc. In other examples, the material of the spin-orbit moment layer 20 may also include a topological insulator, such as Bi x Se 1-x ,Bi x Sb 1-x , (Bi,Sb)2Te3, where x in the topological insulator independently satisfies the value of 0.1-0.9.

[0060] Continue reading Figure 1 The magnetic tunnel junction unit 30 includes a free layer 31, a barrier layer 32 and a reference layer 33 stacked in sequence, and the free layer 31 is disposed adjacent to the spin-orbit moment layer 20, for example, the free layer 31 is disposed on the spin-orbit moment layer 20. The magnetization direction of the free layer 31 can be changed, and its material includes a ferromagnetic material, for example, at least one of Co, Fe, B, Ni, Ru, Ir, and Pt.

[0061] The free layer 31 has a long axis and a short axis, and the dimension of the free layer 31 along the long axis is greater than the dimension along the short axis. In some possible examples, the shape of the free layer 31 is elliptical, rectangular, or diamond. Figure 2 As shown, when the shape of the free layer 31 is an ellipse, the major axis of the ellipse is parallel to the major axis of the free layer 31, for example, coincides with it, and the major axis direction of the free layer 31 is the Y direction as shown in the figure, and the minor axis of the ellipse is parallel to the minor axis of the free layer 31, for example, coincides with it, and the minor axis direction of the free layer 31 is the X direction as shown in the figure.

[0062] When the free layer 31 is in a rectangular shape, the length of the rectangle is parallel to, for example, coincident with, the long axis of the free layer 31, and the width of the rectangle is parallel to, for example, coincident with, the short axis of the free layer 31. When the free layer 31 is in a rhombus shape, the long diagonal of the rhombus is parallel to, for example, coincident with, the long axis of the free layer 31, and the short diagonal of the rhombus is parallel to, for example, coincident with, the short axis of the free layer 31.

[0063] In other possible examples, the free layer 31 may also be in other shapes, and the sizes of the shapes along two perpendicular directions are different, one of the two directions is the long axis direction of the free layer 31, and the size of the free layer 31 along the long axis direction is greater than the size along the other direction. For example, the shape of the free layer 31 is an oblong, or a rounded rectangle, etc. Figure 1 The barrier layer 32 is disposed on a side of the free layer 31 away from the spin-orbit moment layer 20, for example, the barrier layer 32 is disposed on the free layer 31 to isolate the free layer 31 from the reference layer 33. The material of the barrier layer 32 includes an insulating material, for example, at least one of MgO, Al2O3, and SiO2.

[0064] The reference layer 33 is arranged on a side of the barrier layer 32 away from the free layer 31, for example, the reference layer 33 is arranged on the barrier layer 32. The magnetization direction of the reference layer 33 is fixed, and a stray field is generated. The material of the reference layer 33 includes a ferromagnetic material, for example, at least one of Co, Fe, B, Ni, Ru, Ir, and Pt. The material of the reference layer 33 can be the same as or different from the material of the free layer 31, and the embodiment of the present application is not limited to this.

[0065] Continue reading Figure 1 In some possible examples, the magnetic tunnel junction unit 30 further includes a pinning layer 34, which is used to pin the magnetization direction of the reference layer 33 in a fixed direction. The pinning layer 34 can be a single layer or a stacked layer. For example, the pinning layer 34 includes a ferromagnetic layer and an antiferromagnetic layer, and the ferromagnetic layer and the antiferromagnetic layer are alternately stacked. The material of the ferromagnetic layer includes a ferromagnetic material, and the material of the antiferromagnetic layer includes a collinear antiferromagnetic material and a non-collinear antiferromagnetic material, such as IrMn, PtMn, FeMn, NiMn, MnSn, etc.

[0066] The material of the magnetic layer 10 includes ferromagnetic materials, for example, at least one of Co, Fe, B, Ni, Ru, I, and Pt. In this way, the magnetic layer 10 is adjacent to the spin-orbit moment layer 20, and its magnetization direction can change with the current direction in the spin-orbit moment layer 20, that is, the magnetization direction of the magnetic layer 10 can change. The material of the magnetic layer 10 can be the same as that of the free layer 31, or it can be different.

[0067] The magnetic layer 10 has a long axis and a short axis, and the size of the magnetic layer 10 along the long axis is greater than the size along the short axis. In some possible examples, the shape of the magnetic layer 10 is elliptical, rectangular, or rhombus. When the shape of the magnetic layer 10 is elliptical, the long axis of the ellipse is parallel to the long axis of the magnetic layer 10, for example, coincides, and the short axis of the ellipse is parallel to the short axis of the magnetic layer 10, for example, coincides. When the shape of the magnetic layer 10 is rectangular, the length of the rectangle is parallel to the long axis of the magnetic layer 10, for example, coincides, and the width of the rectangle is parallel to the short axis of the magnetic layer 10, for example, coincides. When the shape of the magnetic layer 10 is rhombus, the long diagonal of the rhombus is parallel to the long axis of the magnetic layer 10, for example, coincides, and the short diagonal of the rhombus is parallel to the short axis of the magnetic layer 10, for example, coincides.

[0068] In other possible examples, the magnetic layer 10 may also be in other shapes, and the sizes of the shapes along two perpendicular directions are different, one of the two directions is the long axis direction of the magnetic layer 10, and the size of the magnetic layer 10 along the long axis direction is greater than the size along the other direction. For example, the shape of the magnetic layer 10 is an oblong, or a rounded rectangle, etc. The shapes of the magnetic layer 10 and the free layer 31 may be the same or different.

[0069] See also Figure 1 and Figure 2 The long axis directions of the magnetic layer 10 and the free layer 31 are parallel to each other. By applying a write current to the spin-orbit moment layer 20, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer 10.

[0070] Among them, the long axis directions of the magnetic layer 10 and the free layer 31 are parallel to each other, and a write current is applied to the spin-orbit moment layer 20, and the flow direction of the write current is not perpendicular to the short axis direction of the magnetic layer 10, so that at least part of the write current flows along the short axis direction of the magnetic layer 10, so that the magnetic layer 10 and the free layer 31 can be magnetized along the long axis direction of the magnetic layer 10.

[0071] In some possible examples, the flow direction of the write current is parallel to the short axis direction of the magnetic layer 10, and the write current flows along the short axis direction of the magnetic layer 10. Figure 2 As shown, the write current flows along +X or -X. In some other possible examples, the write current flows along a direction intersecting the short axis direction of the magnetic layer 10 , which is not perpendicular to the short axis direction of the magnetic layer 10 , so that part of the write current flows along the short axis direction of the magnetic layer 10 .

[0072] like Figure 1 As shown, the magnetic layer 10 and the free layer 31 are respectively located on both sides of the spin-orbit moment layer 20. When a write current is applied to the spin-orbit moment layer 20, the Oersted field generated by the write current or the spin polarization caused by the SOT effect is along the long axis direction of the magnetic layer 10 / free layer 31. In addition, polarization currents with different polarization directions are generated on both sides of the spin-orbit moment layer 20, so that after one write, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are always kept opposite.

[0073] For example, Figure 2 As shown, the write current has a current component along the +X direction. For example, the write current is applied along the +X direction, and the magnetic layer 10 is magnetized along the long axis direction of the magnetic layer 10, and the magnetization direction is the +Y direction; the free layer 31 is magnetized along the long axis direction of the magnetic layer 10, and the magnetization direction is the -Y direction. The write current has a current component along the -X direction. For example, the write current is applied along the -X direction, and the magnetic layer 10 is magnetized along the long axis direction of the magnetic layer 10, and the magnetization direction is the -Y direction; the free layer 31 is magnetized along the long axis direction of the magnetic layer 10, and the magnetization direction is the +Y direction.

[0074] The stray field will make the free layer 31 more easily deviate from the parallel state to the anti-parallel state under the influence of the external magnetic field. Therefore, by setting the magnetic layer 10, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are opposite, and the stray field of the semiconductor memory device can be adjusted, thereby enhancing the magnetic moment stability of the free layer 31 and improving the anti-magnetic ability of the semiconductor memory device.

[0075] When the direction of the external magnetic field is parallel to the magnetization direction of the free layer 31, the free layer 31 will not be flipped by the external magnetic field regardless of the direction of the stray field. When the direction of the external magnetic field is antiparallel to the magnetization direction of the free layer 31, when the magnetization directions of the free layer 31 and the reference layer 33 are parallel, the direction of the magnetic moment generated by the magnetic layer 10 is opposite to the direction of the stray field, thereby offsetting the promotion effect of the stray field on the external magnetic field, and the anti-magnetic ability of the semiconductor memory device is enhanced. When the magnetization directions of the free layer 31 and the reference layer 33 are antiparallel, the direction of the magnetic moment generated by the magnetic layer 10 is the same as the direction of the stray field, and both are antiparallel to the direction of the external magnetic field, thereby enhancing the inhibitory effect of the stray field on the external magnetic field, and the anti-magnetic ability of the semiconductor memory device is enhanced.

[0076] After the magnetic layer 10 is introduced, by controlling the direction of the write current, the magnetic layer 10 is magnetized to generate a magnetic moment to regulate the stray field, which offsets the weakening of the anti-magnetic ability of the stray field and promotes the strengthening of the anti-magnetic ability of the stray field, thereby enhancing the anti-magnetic ability of the semiconductor memory device. The magnetization direction of the magnetic layer 10 can be changed according to the write current, which makes the regulation ability of the magnetic layer 10 more flexible.

[0077] By applying a first write current to the spin-orbit moment layer 20, the magnetic layer 10 weakens the stray field, and the first write current has a current component parallel to the short axis direction of the magnetic layer 10. By applying a second write current to the spin-orbit moment layer 20, the magnetic layer 10 strengthens the stray field, and the second write current has a current component in the opposite direction to the first write current.

[0078] Specifically, the magnitude of the stray field is Hs1, the magnitude of the external magnetic field is Hex, and the magnitude of the magnetic moment generated by the magnetic layer 10 is Hs2. When the direction of the external magnetic field is parallel to the direction of the free layer 31, the free layer 31 will not be flipped by the external magnetic field, and the direction of the magnetic layer 10 is parallel or antiparallel to the direction of the external magnetic field. Even if the magnetic layer 10 is flipped by the external magnetic field, the magnetic moment generated by the magnetic layer 10 will not flip the free layer 31.

[0079] See also Figure 3, when the direction of the free layer 31 is antiparallel to the direction of the external magnetic field, a first write current is applied to the spin-orbit moment layer 20, so that the magnetization directions of the free layer 31 and the reference layer 33 are parallel. The direction of the first write current is, for example, parallel to the short axis direction of the magnetic layer 10. The direction of the magnetic moment generated by the magnetic layer 10 is opposite to the direction of the stray field, thereby offsetting the promotion effect of the stray field on the external magnetic field. At this time, the magnitude of the total stray field is Hs=Hs2-Hs1, and the anti-magnetic ability of the semiconductor memory device is enhanced.

[0080] See also Figure 4 , when the direction of the free layer 31 is antiparallel to the direction of the external magnetic field, a second write current is applied to the spin-orbit moment layer 20 to make the direction of the free layer 31 antiparallel to the magnetization direction of the reference layer 33. The direction of the second write current is, for example, opposite to the direction of the first write current. The direction of the magnetic moment generated by the magnetic layer 10 is the same as the direction of the stray field, and both are antiparallel to the direction of the external magnetic field, thereby enhancing the inhibitory effect of the stray field on the external magnetic field. At this time, the magnitude of the total stray field is Hs=Hs2+Hs1, and the anti-magnetic ability of the semiconductor memory device is enhanced.

[0081] Continue reading Figure 2 In some possible examples, the long axis length of the magnetic layer 10 is greater than the long axis length of the free layer 31. The long axis length of the magnetic layer 10 refers to the size of the magnetic layer 10 along the long axis direction of the magnetic layer 10, and the long axis length of the free layer 31 refers to the size of the free layer 31 along the long axis direction of the free layer 31. In this way, the production of the magnetic layer 10 is facilitated. At the same time, the magnetic moment generated by the magnetic layer 10 is also larger, so as to give full play to the role of the magnetic layer 10 and improve the anti-magnetic ability of the semiconductor memory device.

[0082] In other examples, the major axis length of the magnetic layer 10 may also be less than or equal to the major axis length of the free layer 31 , and the function of the magnetic layer 10 in regulating the stray field in the present application can be achieved. The major axis length of the magnetic layer 10 is not limited herein.

[0083] In other examples, the short axis length of the magnetic layer 10 is greater than the short axis length of the free layer 31. The short axis length of the magnetic layer 10 refers to the size of the magnetic layer 10 along the short axis direction of the magnetic layer 10, and the short axis length of the free layer 31 refers to the size of the free layer 31 along the short axis direction of the free layer 31. For example, the long axis length of the magnetic layer 10 is greater than the long axis length of the free layer 31, and the short axis length of the magnetic layer 10 is greater than the short axis length of the free layer 31. In this way, the overall size of the magnetic layer 10 can be larger.

[0084] The magnitude of the magnetic moment generated by the magnetic layer 10 under the action of the spin-orbit moment layer 20 is positively correlated with the length of the major axis of the magnetic layer 10, that is, the longer the major axis of the magnetic layer 10, the greater the magnetic moment generated by the magnetic layer 10 under the action of the spin-orbit moment layer 20. By lengthening the major axis of the magnetic layer 10, a larger magnetic moment can be generated by applying a smaller write current, thereby reducing the power consumption of the semiconductor memory device.

[0085] Continue reading Figure 2 In some possible examples, the projection of the magnetic layer 10 on the spin-orbit moment layer 20 and the projection of the free layer 31 on the spin-orbit moment layer 20 at least partially overlap. In this way, at least a portion of the free layer 31 is located directly above the magnetic layer 10, which can reduce the distance between the magnetic layer 10 and the free layer 31, so that the magnetic moment generated by the magnetic layer 10 can be fully utilized to ensure that the semiconductor memory device will not fail.

[0086] For example, at least one of the two ends of the magnetic layer 10 along the long axis direction may protrude from the opposite end of the free layer 31. For another example, at least one of the two ends of the magnetic layer 10 along the short axis direction may protrude from the opposite end of the free layer 31. For another example, the outer peripheral surface of the magnetic layer 10 protrudes from the outer peripheral surface of the free layer 31. For another example, the magnetic layer 10 and the free layer 31 have the same area and are completely opposite.

[0087] For some possible examples, see Figure 1 The semiconductor memory device further includes a top electrode layer 40, which is located on a side of the magnetic tunnel junction unit 30 away from the magnetic layer 10. The data stored in the magnetic tunnel junction unit 30 can be read by using the top electrode layer 40. Figure 2 As shown, the top electrode layer 40 is located on the top surface of the magnetic tunnel junction unit 30. The material of the top electrode layer 40 includes metal, for example, the material of the top electrode layer 40 includes at least one of W, Al, and Cu.

[0088] The semiconductor memory device in the embodiment of the present application comprises a magnetic layer 10, a spin-orbit moment layer 20 and a magnetic tunnel junction unit 30, wherein the magnetic layer 10, the spin-orbit moment layer 20 and the magnetic tunnel junction unit 30 are stacked in sequence, and the free layer 31 in the magnetic tunnel junction unit 30 is arranged adjacent to the spin-orbit moment layer 20. The long axis directions of the magnetic layer 10 and the free layer 31 are parallel to each other, and by applying a write current to the spin-orbit moment layer 20, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are opposite, so as to adjust the stray field of the semiconductor memory device, so that the magnetic moment generated after the magnetization of the magnetic layer 10 offsets the weakening anti-magnetic ability of the stray field and promotes the strengthening anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device, and improving the stability and reliability of the semiconductor memory device.

[0089] An embodiment of the present application also provides a method for manufacturing a semiconductor memory device, which includes: forming a stacked magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit; wherein the free layer in the formed magnetic tunnel junction unit is adjacent to the spin-orbit moment layer; the long axis directions of the formed magnetic layer and the free layer are parallel to each other, and by applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, and the write current has a current component along the short axis direction of the magnetic layer.

[0090] Among them, see Figure 1 The magnetic layer 10 and the magnetic tunnel junction unit 30 are respectively located on both sides of the spin-orbit moment layer 20 and are in contact with the spin-orbit moment layer 20. When current flows through the spin-orbit moment layer 20, a polarized current can be generated to generate a torque to change the resistance state of the magnetic tunnel junction unit 30. The spin-orbit moment layer 20 can be a single layer or a stacked layer, and the material of the spin-orbit moment layer 20 is a conductive material with a strong spin-orbit coupling effect.

[0091] The magnetic tunnel junction unit 30 includes a free layer 31, a barrier layer 32 and a reference layer 33 stacked in sequence, and the free layer 31 is disposed adjacent to the spin orbit moment layer 20. The magnetization direction of the free layer 31 can be changed, and its material includes ferromagnetic material. The free layer 31 has a long axis and a short axis. The free layer 31 is along the long axis direction ( Figure 2 The size along the Y direction is larger than that along the short axis ( Figure 2 In some possible examples, the free layer 31 is elliptical, rectangular, or diamond-shaped.

[0092] The barrier layer 32 is arranged on a side of the free layer 31 away from the spin-orbit moment layer 20, and is used to isolate the free layer 31 and the reference layer 33. The material of the barrier layer 32 includes an insulating material. The reference layer 33 is arranged on the barrier layer 32, and the magnetization direction of the reference layer 33 is fixed. The material of the reference layer 33 includes a ferromagnetic material. In some possible examples, the magnetic tunnel junction unit 30 also includes a pinning layer 34, and the pinning layer 34 is used to pin the magnetization direction of the reference layer 33 in a fixed direction. The pinning layer 34 can be a single layer or a stacked layer.

[0093] The number of magnetic layers 10 may be one or more, for example, the number of magnetic layers 10 is the same as the number of magnetic tunnel junction units 30, so that each magnetic tunnel junction unit 30 corresponds to one magnetic layer 10, so that each magnetic tunnel junction unit 30 can be regulated to ensure the anti-magnetic ability of each magnetic tunnel junction unit 30, thereby improving the overall anti-magnetic ability. Of course, the embodiment of the present application is not limited to this, and the number of magnetic layers 10 can also be greater than the number of magnetic tunnel junction units 30, for example, one magnetic tunnel junction unit 30 corresponds to at least one magnetic layer 10.

[0094] The material of the magnetic layer 10 includes ferromagnetic material, and its magnetization direction can change with the direction of the current in the spin orbit moment layer 20, that is, the magnetization direction of the magnetic layer 10 can change. The magnetic layer 10 has a long axis and a short axis. The magnetic layer 10 is along the long axis direction ( Figure 2 The size along the Y direction is larger than that along the short axis ( Figure 2 In some possible examples, the shape of the magnetic layer 10 is elliptical, rectangular or diamond.

[0095] The long axis directions of the magnetic layer 10 and the free layer 31 are parallel to each other. A write current is applied to the spin-orbit moment layer 20, and the flow direction of the write current is not perpendicular to the short axis direction of the magnetic layer 10, so that at least part of the write current flows along the short axis direction of the magnetic layer 10, thereby allowing the magnetic layer 10 and the free layer 31 to be magnetized along the long axis direction of the magnetic layer 10.

[0096] like Figure 1 and Figure 2 As shown, the magnetic layer 10 and the free layer 31 are respectively located on both sides of the spin-orbit moment layer 20. When a write current is applied to the spin-orbit moment layer 20, the Oersted field generated by the write current or the spin polarization caused by the SOT effect is along the long axis direction of the magnetic layer 10 / free layer 31. In addition, polarization currents with different polarization directions are generated on both sides of the spin-orbit moment layer 20, so that after one write, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are always kept opposite.

[0097] The stray field of the semiconductor memory device can be adjusted by using the opposite magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis of the magnetic layer 10. By controlling the direction of the write current, the magnetic moment generated after the magnetic layer 10 is magnetized will offset the weakening anti-magnetic ability of the stray field and promote the strengthening anti-magnetic ability of the stray field.

[0098] By applying a first write current to the spin-orbit moment layer 20, the magnetic layer 10 weakens the stray field, and the first write current has a current component parallel to the short axis direction of the magnetic layer 10. By applying a second write current to the spin-orbit moment layer 20, the magnetic layer 10 strengthens the stray field, and the second write current has a current component in the opposite direction to the first write current.

[0099] Specifically, the magnitude of the stray field is Hs1, the magnitude of the external magnetic field is Hex, and the magnitude of the magnetic moment generated by the magnetic layer 10 is Hs2. When the direction of the external magnetic field is parallel to the direction of the free layer 31, the free layer 31 will not be flipped by the external magnetic field, and the direction of the magnetic layer 10 is parallel or antiparallel to the direction of the external magnetic field. Even if the magnetic layer 10 is flipped by the external magnetic field, the magnetic moment generated by the magnetic layer 10 will not flip the free layer 31.

[0100] See also Figure 3When the direction of the free layer 31 is antiparallel to the direction of the external magnetic field, a first write current is applied to the spin-orbit moment layer 20, so that the magnetization directions of the free layer 31 and the reference layer 33 are parallel. The direction of the first write current is, for example, parallel to the short axis direction of the magnetic layer 10. The magnetic moment generated by the magnetic layer 10 is in the opposite direction, thereby offsetting the promotion effect of the stray field on the external magnetic field. At this time, the magnitude of the total stray field is Hs=Hs2-Hs1, and the anti-magnetic ability of the semiconductor memory device is enhanced.

[0101] See also Figure 4 When the direction of the free layer 31 is antiparallel to the direction of the external magnetic field, a second write current is applied to the spin-orbit moment layer 20 to make the direction of the free layer 31 antiparallel to the magnetization direction of the reference layer 33. The direction of the second write current is, for example, opposite to the direction of the first write current. The direction of the magnetic moment generated by the magnetic layer 10 is the same as the direction of the stray field, and both are antiparallel to the direction of the external magnetic field, thereby enhancing the inhibitory effect of the stray field on the external magnetic field. At this time, the size of the total stray field is Hs=Hs2+Hs1, and the anti-magnetic ability of the semiconductor memory device is further enhanced.

[0102] In some possible examples, the long axis length of the magnetic layer 10 is greater than the long axis length of the free layer 31. In this way, the production of the magnetic layer 10 is facilitated. At the same time, the magnetic moment generated by the magnetic layer 10 is also larger, so as to give full play to the role of the magnetic layer 10 and improve the magnetic resistance of the semiconductor memory device. In other examples, the short axis length of the magnetic layer 10 is greater than the short axis length of the free layer 31.

[0103] In other examples, the major axis length of the magnetic layer 10 may also be less than or equal to the major axis length of the free layer 31 , and the function of the magnetic layer 10 in regulating the stray field in the present application can be achieved. The major axis length of the magnetic layer 10 is not limited herein.

[0104] The magnitude of the magnetic moment generated by the magnetic layer 10 under the action of the spin-orbit moment layer 20 is positively correlated with the length of the major axis of the magnetic layer 10, that is, the longer the major axis of the magnetic layer 10, the greater the magnetic moment generated by the magnetic layer 10 under the action of the spin-orbit moment layer 20. By lengthening the major axis of the magnetic layer 10, a larger magnetic moment can be generated by applying a smaller write current, thereby reducing the power consumption of the semiconductor memory device.

[0105] In some possible examples, the projection of the magnetic layer 10 on the spin-orbit moment layer 20 and the projection of the free layer 31 on the spin-orbit moment layer 20 at least partially overlap or completely overlap. In this way, at least part of the free layer 31 is located directly above the magnetic layer 10, which can reduce the distance between the magnetic layer 10 and the free layer 31, so that the magnetic moment generated by the magnetic layer 10 can be fully utilized to ensure that the semiconductor memory device will not fail. In addition, there is no strict limitation on the size of the magnetic layer 10 relative to the free layer 31, the process difficulty is low, and the flexibility of the process operation is increased.

[0106] For some possible implementations, see Figure 1 and Figure 5 , forming a stacked magnetic layer 10, a spin-orbit moment layer 20 and a magnetic tunnel junction unit 30, specifically comprising the following steps:

[0107] Step S100: forming a magnetic film layer, and removing part of the magnetic film layer so that the remaining magnetic film layer has an aspect ratio greater than 1.

[0108] See also Figure 6 , the magnetic film layer 11 can be deposited and formed, and the magnetic film layer 11 is etched to remove part of the magnetic film layer 11, and the aspect ratio of the remaining magnetic film layer 11 is greater than 1. In this way, the remaining magnetic film layer 11 has a major axis and a minor axis, and the major axis size is greater than the minor axis size. Exemplarily, the shape of the remaining magnetic film layer 11 is elliptical, rhombus or rectangular, etc. It can be understood that a large area of ​​the magnetic film layer 11 can be deposited as a whole on a wafer or a semiconductor substrate, and after the magnetic film layer 11 is etched, the remaining magnetic film layer 11 can form a plurality of separate bodies spaced apart from each other, and the aspect ratio of each separate body is greater than 1.

[0109] Step S200: forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer in sequence above the remaining magnetic film layer, with part of the spin-orbit moment film layer covering the side wall of the magnetic film layer.

[0110] See also Figure 7 The spin-orbit moment film layer 21 and the magnetic tunnel junction film layer 35 can be deposited and formed, and the spin-orbit moment film layer 21 covers the residual magnetic film layer 11. Specifically, the spin-orbit moment film layer 21 covers the top surface and sidewalls of the residual magnetic film layer 11. For example, the magnetic tunnel junction film layer 35 includes a first magnetic material layer, an insulating material layer, and a second magnetic material layer stacked in sequence, the first magnetic material layer is used to form a free layer 31, the insulating material layer is used to form a barrier layer 32, and the second magnetic material layer is used to form a reference layer 33.

[0111] Step S300: etching the spin-orbit moment film layer and the magnetic tunnel junction film layer to form a spin-orbit moment layer and a magnetic tunnel junction unit.

[0112] See also Figure 8, the spin-orbit moment film layer 21 and the magnetic tunnel junction film layer 35 are etched, the remaining spin-orbit moment film layer 21 forms the spin-orbit moment layer 20, and the remaining magnetic tunnel junction film layer 35 forms the magnetic tunnel junction unit 30. Fig. 9 During the etching process, both ends of the magnetic film layer 11 along the long axis direction are also etched, and the remaining magnetic film layer 11 forms a magnetic layer 10 , and both ends of the magnetic layer 10 along the long axis direction are flush with the spin-orbit moment layer 20 .

[0113] In some other examples, the spin-orbit moment film layer 21 deposited in step S200 partially or completely covers the top surface of the residual magnetic film layer 11, but does not cover the sidewall of the residual magnetic film layer 11. Therefore, the spin-orbit moment layer 20 finally formed in step S300 is placed above the magnetic tunnel junction unit 30, and does not contact the sidewall of the magnetic layer 10, and can also achieve the function of the magnetic layer 10 in regulating the stray field in the present application, and whether the spin-orbit moment layer 20 wraps the sidewall of the magnetic layer 10 is not limited here.

[0114] For other possible implementations, see Figure 1 and Fig.10 , forming a magnetic layer 10, a spin-orbit moment layer 20 and a magnetic tunnel junction unit 30, specifically comprising the following steps:

[0115] Step a: forming a magnetic film layer, and removing part of the magnetic film layer so that the aspect ratio of the remaining magnetic film layer is greater than 1.

[0116] See also Fig.11 , the magnetic film layer 11 can be deposited and formed, and the magnetic film layer 11 is etched to remove part of the magnetic film layer 11, and the aspect ratio of the remaining magnetic film layer 11 is greater than 1. In this way, the remaining magnetic film layer 11 has a major axis and a minor axis, and the major axis is greater than the minor axis. Exemplarily, the shape of the remaining magnetic film layer 11 is elliptical, rhombus or rectangular, etc. It can be understood that a large area of ​​the magnetic film layer 11 can be deposited as a whole on a wafer or a semiconductor substrate, and after the magnetic film layer 11 is etched, the remaining magnetic film layer 11 can form a plurality of separate bodies spaced apart from each other, and the aspect ratio of each separate body is greater than 1. The remaining magnetic film layer 11 forms the magnetic layer 10.

[0117] Step b: forming a dielectric layer on both sides of the remaining magnetic film layer, wherein the upper surface of the dielectric layer is flush with the upper surface of the magnetic film layer.

[0118] See also Fig.12 The dielectric layer 50 can be formed by deposition, for example, depositing dielectric material to cover the remaining magnetic film layer 11 and fill between the remaining magnetic film layers 11, and the upper surface of the dielectric material is higher than the upper surface of the magnetic film layer 11. Then, the dielectric material is planarized to form the dielectric layer 50, and the magnetic film layer 11 is exposed, so that the upper surface of the magnetic film layer 11 is flush with the upper surface of the dielectric layer 50.

[0119] Step c: forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer in sequence above the remaining magnetic film layer and the dielectric layer.

[0120] See also Fig.12 , the spin-orbit moment film layer 21 and the magnetic tunnel junction film layer 35 can be deposited and formed, the spin-orbit moment film layer 21 covers the residual magnetic film layer 11 and the dielectric layer 50, specifically, the spin-orbit moment film layer 21 covers the top surface of the residual magnetic film layer 11 and the top surface of the dielectric layer 50. The magnetic tunnel junction film layer 35 covers the top surface of the magnetic tunnel junction film layer 35. For example, the magnetic tunnel junction film layer 35 includes a first magnetic material layer, an insulating material layer, and a second magnetic material layer stacked in sequence, the first magnetic material layer is used to form a free layer 31, the insulating material layer is used to form a barrier layer 32, and the second magnetic material layer is used to form a reference layer 33.

[0121] Step d: etching the spin-orbit moment film layer and the magnetic tunnel junction film layer to form a spin-orbit moment layer and a magnetic tunnel junction unit.

[0122] See also Fig.13 , the spin-orbit moment film layer 21 and the magnetic tunnel junction film layer 35 are etched, the remaining spin-orbit moment film layer 21 forms the spin-orbit moment layer 20, and the remaining magnetic tunnel junction film layer 35 forms the magnetic tunnel junction unit 30. Fig.14 During the etching process, both ends of the magnetic film layer 11 along the long axis direction will not be etched, and both ends of the magnetic layer 10 along the long axis direction can protrude from the corresponding ends of the spin-orbit moment layer 20 respectively.

[0123] It can be understood that the above is a method for manufacturing a single semiconductor memory device. By adopting this method, multiple semiconductor memory devices spaced apart from each other can be formed on a wafer or semiconductor substrate at the same time. The specific process will not be repeated here.

[0124] The manufacturing method in the embodiment of the present application includes: forming a stacked magnetic layer 10, a spin-orbit moment layer 20 and a magnetic tunnel junction unit 30, wherein the free layer 31 in the formed magnetic tunnel junction unit 30 is adjacent to the spin-orbit moment layer 20; the long axis directions of the formed magnetic layer 10 and the free layer 31 are parallel to each other, and by applying a write current to the spin-orbit moment layer 20, the magnetization directions of the magnetic layer 10 and the free layer 31 along the long axis direction of the magnetic layer 10 are opposite, so as to adjust the stray field of the semiconductor memory device, so that the magnetic moment generated after the magnetic layer 10 is magnetized will offset the weakening anti-magnetic ability of the stray field and promote the strengthening of the anti-magnetic ability of the stray field, thereby improving the anti-magnetic ability of the semiconductor memory device, and improving the stability and reliability of the semiconductor memory device.

[0125] In this specification, each embodiment or implementation is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referenced to each other. The description of reference terms such as "one implementation", "some implementations", "illustrative implementations", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the implementation or example are included in at least one implementation or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable manner.

[0126] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor memory device, characterized in that: include: A magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit stacked in sequence; The free layer in the magnetic tunnel junction unit is arranged adjacent to the spin-orbit moment layer; The long axis directions of the magnetic layer and the free layer are parallel to each other, and the dimensions of the free layer and the magnetic layer along the long axis direction are larger than those along the short axis direction. By applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer.

2. The semiconductor memory device according to claim 1, wherein: The major axis length of the magnetic layer is greater than the major axis length of the free layer.

3. The semiconductor memory device according to claim 2, wherein: The magnetic layer and the free layer are in an elliptical, rectangular or diamond shape.

4. The semiconductor memory device according to any one of claims 1 to 3, characterized in that: A projection of the magnetic layer on the spin-orbit moment layer at least partially overlaps with a projection of the free layer on the spin-orbit moment layer.

5. The semiconductor memory device according to any one of claims 1 to 3, characterized in that: The magnitude of the magnetic moment generated by the magnetic layer under the action of the spin-orbit moment layer is positively correlated with the major axis length of the magnetic layer.

6. The semiconductor memory device according to any one of claims 1 to 3, characterized in that: The magnetic layer weakens the stray field by applying a first write current to the spin-track moment layer, wherein the first write current has a current component parallel to a short axis direction of the magnetic layer.

7. The semiconductor memory device according to claim 6, wherein: The magnetic layer enhances the stray field by applying a second write current to the spin-orbit moment layer, wherein the second write current has a current component in a direction opposite to that of the first write current.

8. A method for manufacturing a semiconductor memory device, characterized in that: include: forming a stacked magnetic layer, a spin-orbit moment layer, and a magnetic tunnel junction unit; Wherein, the free layer in the formed magnetic tunnel junction unit is adjacent to the spin-orbit moment layer; The long axis directions of the formed magnetic layer and the free layer are parallel to each other, and the dimensions of the free layer and the magnetic layer along the long axis direction are larger than those along the short axis direction. By applying a write current to the spin-orbit moment layer, the magnetization directions of the magnetic layer and the free layer along the long axis direction of the magnetic layer are made opposite to each other, so as to adjust the stray field of the semiconductor memory device, wherein the write current has a current component along the short axis direction of the magnetic layer.

9. The manufacturing method according to claim 8, characterized in that: The stacked magnetic layer, spin orbit moment layer and magnetic tunnel junction unit include: forming a magnetic film layer, removing part of the magnetic film layer so that the aspect ratio of the remaining magnetic film layer is greater than 1; Sequentially forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer on the remaining magnetic film layer, with part of the spin-orbit moment film layer covering the side wall of the magnetic film layer; The spin-orbit moment film layer and the magnetic tunnel junction film layer are etched to form the spin-orbit moment layer and the magnetic tunnel junction unit.

10. The manufacturing method according to claim 8, characterized in that: The method for forming a magnetic layer, a spin-orbit moment layer and a magnetic tunnel junction unit comprises: forming a magnetic film layer, removing part of the magnetic film layer so that the aspect ratio of the remaining magnetic film layer is greater than 1; forming a dielectric layer on both sides of the remaining magnetic film layer, wherein the upper surface of the dielectric layer is flush with the upper surface of the magnetic film layer; Sequentially forming a stacked spin-orbit moment film layer and a magnetic tunnel junction film layer on the remaining magnetic film layer and the dielectric layer; The spin-orbit moment film layer and the magnetic tunnel junction film layer are etched to form the spin-orbit moment layer and the magnetic tunnel junction unit.

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