Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel and a display device. The display panel comprises a substrate, a pixel defining layer, an anode, a functional layer and a cathode, the pixel defining layer is arranged on the substrate and comprises a plurality of first dams and a plurality of second dams, the first dams are distributed at intervals, the second dams cover the first dams, and openings are formed in the side walls of the second dams; the anodes comprise a first anode and a second anode, the first anode is arranged between the first dam and the second dam and covers the first dam, and the second anode is arranged in the opening; the functional layer is arranged on the surface, away from the substrate, of the second anode; the cathode covers the second dam and the functional layer. According to the display panel, the first dam and the reflective first anode are arranged in the second dam, and after part of light emitted by the photoelectric device enters the second dam, the light can be guided out to the light emitting surface of the photoelectric device through reflection of the first anode, so that the light emitting rate of the photoelectric device is effectively improved, and the brightness of the display panel is improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular, relates to a display panel, a method for preparing the display panel, and a display device including the display panel. Background Art

[0002] Optoelectronic devices such as OLED (Organic Light-Emitting Diode) and QLED (Quantum Dot Light-Emitting Diode) are often used in the field of display technology. Among them, OLED has many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, high clarity and contrast, wide operating temperature range and flexible display, which makes it have a wide application prospect in display panels.

[0003] However, the light extraction efficiency of optoelectronic devices in existing display panels still needs to be further improved. Summary of the invention

[0004] Embodiments of the present application provide a display panel and a display device to solve the problem that the light extraction efficiency of optoelectronic devices in existing display panels needs to be improved.

[0005] In a first aspect, an embodiment of the present application provides a display panel, comprising a substrate, a pixel defining layer, an anode, a functional layer and a cathode; the pixel defining layer is arranged on the substrate, the pixel defining layer comprises a plurality of first dams and a plurality of second dams, the plurality of first dams are spaced apart, the second dams cover the first dams, and the side walls of the plurality of second dams form an opening; the anode comprises a first anode and a second anode, the first anode is arranged between the first dam and the second dam and covers the first dam, and the second anode is arranged in the opening; the functional layer is arranged on a surface of the second anode away from the substrate; the cathode covers the second dam and the functional layer.

[0006] Optionally, a side wall of the first anode close to the substrate is concave inward, and a side wall of the first anode away from the substrate is convex outward; and / or a visible light reflectivity of the first anode is 95% to 100%.

[0007] Optionally, the longitudinal cross-section of the first dam is trapezoidal or rectangular.

[0008] Optionally, the thickness of the first anode is 50nm to 150nm; and / or, the thickness of the second anode is 50nm to 150nm; and / or, the thickness of the first dam is 0.1μm to 2μm; and / or, the thickness of the second dam is 0.1μm to 2μm.

[0009] Optionally, the display panel further includes a display driver device disposed on the substrate, the pixel defining layer, the anode, the functional layer and the cathode are disposed on a surface of the display driver device away from the substrate, and the anode is electrically connected to the display driver device.

[0010] Optionally, the display driver device includes a first capacitor, the second dam, the first anode and the cathode form a second capacitor, the first anode is electrically connected to one of the electrodes of the first capacitor, and the potential of the cathode is the same as the potential of the other electrode of the first capacitor.

[0011] Optionally, the functional layer includes a light-emitting layer, and the light-emitting layer is arranged between the second anode and the cathode.

[0012] Optionally, the materials of the first dam and the second dam are independently selected from one of polyimide, phenolic resin, epoxy resin, polyacrylic acid, polydimethylsiloxane, silicon nitride, silicon oxynitride, silicon oxide and silicon oxycarbide; and / or, the first anode is selected from a composite electrode formed by one or more of a metal electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca and Mg; the material of the doped or undoped metal oxide electrode is selected from ITO , FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO 2 / Al / TiO2; and / or, the second anode and the cathode are independently selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO , IZO, MZO and AMO; the material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2;And / or, the light-emitting layer is a quantum dot light-emitting layer or an organic light-emitting layer, the material of the quantum dot light-emitting layer is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, Z At least one of nSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, Pb At least one of SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs s, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; and / or;

[0013] The core of the core-shell structured quantum dots includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell structured quantum dots includes CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS and at least one of the above-mentioned single-structured quantum dots; the material of the organic light-emitting layer includes 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenyl Amine: at least one of tri[2-(p-tolyl)pyridine-C2,N)iridium, diarylanthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the functional layer further includes a hole transport layer, the hole transport layer is arranged between the second anode and the light-emitting layer, and the material of the hole transport layer includes TFB, CuPc , PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene and at least one of C60; and / or, the functional layer further comprises a hole injection layer, and the hole injection layer is disposed on the first Between the second anode and the light-emitting layer, the material of the hole injection layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene and C60;And / or, the functional layer further comprises an electron transport layer, the electron transport layer is arranged between the cathode and the light-emitting layer, the material of the electron transport layer comprises an inorganic material and / or an organic material, the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds; And / or, the functional layer further comprises an electron injection layer, the electron injection layer is arranged between the cathode and the light-emitting layer, the material of the electron injection layer comprises an inorganic material and / or an organic material, the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, the doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium, the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds. ;

[0014] In a second aspect, an embodiment of the present application further provides a method for preparing a display panel, the method comprising the following steps: providing a substrate, forming a plurality of first dams spaced apart on the substrate, the side walls of the plurality of first dams forming openings; forming an anode on the substrate, the anode comprising a first anode covering the first dam and a second anode located in the opening, a gap being provided between the second anode and the first anode; forming a second dam covering the first anode on the substrate; forming a functional layer on a surface of the second anode away from the substrate; forming a cathode on the second dam and the functional layer, to obtain a display panel.

[0015] Optionally, forming a plurality of first dams distributed at intervals on the substrate includes: forming a display driver device on the substrate; and forming a plurality of first dams distributed at intervals on a surface of the display driver device away from the substrate.

[0016] Optionally, the functional layer includes a light-emitting layer, and forming the functional layer on a surface of the second anode away from the substrate includes: forming a light-emitting layer on a surface of the second anode away from the substrate.

[0017] Optionally, the functional layer also includes a hole transport layer, and the forming of the functional layer on the surface of the second anode away from the substrate includes: forming the hole transport layer and the light-emitting layer in sequence on the surface of the second anode away from the substrate; and / or, the functional layer also includes a hole injection layer, and the forming of the functional layer on the surface of the second anode away from the substrate includes: forming the hole injection layer and the light-emitting layer in sequence on the surface of the second anode away from the substrate; and / or, the functional layer also includes an electron transport layer, and the forming of the functional layer on the surface of the second anode away from the substrate includes: forming the light-emitting layer and the electron transport layer in sequence on the surface of the second anode away from the substrate; and / or, the functional layer also includes an electron injection layer, and the forming of the functional layer on the surface of the second anode away from the substrate includes: forming the light-emitting layer and the electron injection layer in sequence on the surface of the second anode away from the substrate.

[0018] In a third aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned display panel, or the display device includes the display panel manufactured by the above-mentioned manufacturing method.

[0019] The present application arranges a first dam and a first anode inside a second dam, and the first anode covers the first dam to form a three-dimensional reflective structure. When part of the light emitted by the optoelectronic device enters the second dam, the light can be reflected by the first anode and directed toward the light-emitting surface of the optoelectronic device, thereby effectively improving the light-emitting efficiency of the optoelectronic device and further improving the brightness of the display panel and the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without creative work. In the following description, the same figure numbers represent the same parts.

[0021] Figure 1 A schematic diagram of the first structure of the optoelectronic device provided in an embodiment of the present application.

[0022] Figure 2 A second structural schematic diagram of the optoelectronic device provided in an embodiment of the present application.

[0023] Figure 3 A schematic diagram of a first structure of a first dam and a first anode provided in an embodiment of the present application.

[0024] Figure 4 A second structural schematic diagram of the first dam and the first anode provided in an embodiment of the present application.

[0025] Figure 5 A first structural schematic diagram of the first dam provided in an embodiment of the present application.

[0026] Figure 6 A second structural schematic diagram of the first dam provided in an embodiment of the present application.

[0027] Figure 7 A schematic diagram of a first anode, a second anode and a via provided in an embodiment of the present application.

[0028] Figure 8 A flow chart of a method for preparing a display panel provided in an embodiment of the present application.

[0029] Figure 9-Figure 17 A schematic diagram of the preparation process of a display panel provided in an embodiment of the present application.

[0030] Description of Figure Numbers:

[0031] 100, pixel defining layer; 110, substrate; 120, display driver; 121, via; 121', undeveloped via; 130, first capacitor; 140, first dam; 140', first dam film layer; 150, anode film layer; 151, first anode; 152, second anode; 160, second dam; 170, functional layer; 180, cathode; 190, second capacitor. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0033] See also Figure 1 and Figure 2, an embodiment of the present application provides a display panel, which includes a substrate 110, a pixel defining layer 100, an anode, a functional layer 170 and a cathode 180; the pixel defining layer 100 is arranged on the substrate 110, the pixel defining layer 100 includes a plurality of first dams 140 and a plurality of second dams 160, the plurality of first dams 140 are distributed at intervals, the second dams 160 cover the first dams 140, and the side walls of the plurality of second dams 160 form openings; the anode includes a first anode 151 and a second anode 152, the first anode 151 is arranged between the first dam 140 and the second dam 160 and covers the first dam 140, and the second anode 152 is arranged in the above-mentioned opening; the functional layer 170 is arranged on the surface of the second anode 152 away from the substrate 110; the cathode 180 covers the second dam 160 and the functional layer 170.

[0034] The present application arranges a first dam 140 and a first anode 151 inside the second dam 160, and the first anode 151 covers the first dam 140 to form a three-dimensional reflective structure. When part of the light emitted by the optoelectronic device enters the second dam 160, the light can be reflected by the first anode 151 and directed toward the light-emitting surface of the optoelectronic device, thereby effectively improving the light-emitting efficiency of the optoelectronic device and further improving the brightness of the display panel and the display device.

[0035] Among them, the substrate 110 is used to carry the display driver 120 (such as TFT) and the optoelectronic device (such as OLED, QLED). The substrate 110 can be a rigid substrate or a flexible substrate. The rigid substrate can be a ceramic material or a glass material, etc. The flexible substrate can be PI (polyimide film) and its derivatives, PEN (polyethylene naphthalate), PEP (phosphoenolpyruvic acid) or PPO (diphenylene ether resin) and other materials.

[0036] The main function of the first dam 140 is to form a corresponding three-dimensional structure, which helps the first anode 151 to form in the first dam 140 region and can effectively guide the light emitted by the optoelectronic device to its light-emitting surface, thereby improving the light extraction rate of the optoelectronic device. Figure 3 and Figure 5 As shown, in some embodiments of the present application, in a direction perpendicular to the front side of the substrate 110 (i.e., the side provided with the first dam 140), the longitudinal cross-section of the first dam 140 is a trapezoid (e.g., an isosceles trapezoid) or a rectangle (e.g., a rectangle or a square). Of course, in other embodiments, the longitudinal cross-section of the first dam 140 may also be other shapes, which may be specifically set according to actual needs.

[0037] Optionally, the thickness of the first dam 140 can be set to 0.1 μm to 2 μm, which is determined according to the position of the light-emitting layer and the height of the second dam 160 relative to the first anode 151, preferably 0.5 μm. The material of the first dam 140 can be selected from polyimide, phenolic resin, epoxy resin, polyacrylic acid, polydimethylsiloxane, silicon nitride, silicon oxynitride, silicon oxide or silicon oxycarbide.

[0038] like Figure 4 and Figure 6 As shown, in some embodiments of the present application, the side wall of the first dam 140 (i.e., the side wall facing the functional layer 170) is concave inwards on the side close to the substrate 110, and the side wall of the first dam 140 is convex outwards away from the substrate 110, so that the side wall of the first anode 151 is concave inwards on the end close to the substrate 110, and the side wall of the first anode 151 is convex outwards away from the substrate 110. For ease of understanding, Figure 6 For example, the three-dimensional structure of the first dam 140 is that its side wall facing the functional layer 170 has an "S-shaped" shape with a slightly concave bottom and a convex top. The side wall of the first anode 151 covering the first dam 140 also has an "S-shaped" shape with a slightly concave bottom and a convex top. By comparison Figure 5 and Figure 6 The structure of the first dam 140 shows that Figure 6 The structure of the first dam 140 shown is more conducive to the first anode 151 guiding the light in the light-emitting direction.

[0039] The plurality of second dams 160 form a film structure that wraps almost all areas of the effective display area of ​​the display panel except the functional layer 170 area, and forms an electrical barrier between the first anode 151 and the second anode 152, that is, the first anode 151 and the second anode 152 are not connected to each other. The plurality of openings enclosed by the side walls of the plurality of second dams 160 form display pixels, and the functional layer 170 material will be set in these display pixels. The thickness of the second dam 160 can be set to 0.1μm to 2μm, depending on the position of the light-emitting layer and the height of the second dam 160 relative to the first anode 151, preferably 0.5μm. A preferred solution for the second dam 160 is that the height of its top is 0.6μm to 1.5μm from the height of the first anode 151, which is conducive to forming a groove structure to prevent the photoelectric device from having a reduced flexibility and bending ability or other Peeling problems due to excessive step difference; and it can also cover the first dam 140 and the first anode 151 corresponding to the second dam 160.

[0040] Optionally, the material of the second dam 160 can be selected from polyimide, phenolic resin, epoxy resin, polyacrylic acid, polydimethylsiloxane, silicon nitride, silicon oxynitride, silicon oxide or silicon oxycarbide. A preferred solution for the second dam 160 is that its film-forming precursor is an organic material with high leveling properties, such as polyimide, phenolic resin, epoxy resin or polyacrylic acid; this is conducive to the side of the second dam 160 (i.e., the side facing the functional layer 170) to be a regular and flat inclined surface, so that the functional layers 170 deposited near this side wall will not be directly connected and short-circuited (such as short-circuited between the hole injection layer and the electron injection layer), or the irregular changes in the side wall of the second dam 160 will not cause the performance of the optoelectronic device to deteriorate.

[0041] The anode is a part of the optoelectronic device and has the function of injecting holes or electrons. The first anode 151 can be a conductive reflective film or a laminated film. The first anode 151 has a high visible light reflectivity and can effectively guide the light to the light-emitting surface by reflecting the emitted light of the optoelectronic device. The visible light reflectivity of the first anode 151 is preferably 95% to 100%. The second anode 152 can be a conductive reflective film or a laminated film. When the optoelectronic device is a top-emitting device, the second anode 152 also needs to have a reflective function; when the optoelectronic device is a bottom-emitting device, the second anode 152 may not have a reflective function. Optionally, the first anode 151 can be selected from a metal electrode and a composite electrode formed by one or more of a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca and Mg; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. The second anode 152 can be selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode, and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO. At least one; the material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0042] In some embodiments of the present application, the thickness of the first anode 151 is 50nm to 150nm, for example, the thickness of the first anode 151 can be 50nm, 80nm, 100nm, 120nm or 150nm, etc., which can be set according to actual needs; and / or, the thickness of the second anode 152 is 50nm to 150nm, for example, the thickness of the second anode 152 can be 50nm, 80nm, 100nm, 120nm or 150nm, etc., which can be set according to actual needs. In a preferred embodiment of the present application, the first anode 151 is an IZO / Ag (0.01μm / 0.1μm) stack, and the second anode 152 is an IZO / Ag / IZO (0.01μm / 0.1μm / 0.01μm) stack, wherein the IZO layer is the bottom layer away from the photoelectric device relative to the Ag layer. In the first anode 151 , by reducing the surface layer of IZO, the light reflectivity (ie, visible light reflectivity) of the first anode 151 in the first bank 140 region can be effectively improved.

[0043] The cathode 180 is a part of the photoelectric device, which has the function of electron injection and transmission, and the cathode 180 can be a conductive film. In some embodiments of the present application, the thickness of the cathode 180 is 15nm to 100nm, for example, the thickness of the cathode 180 can be 15nm, 30nm, 40nm, 50nm, 60nm, 80nm or 100nm, etc., which can be set according to actual needs.

[0044] Optionally, cathode 180 may be a composite electrode formed by one or more of a metal electrode, a carbon electrode, and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO. The material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. A preferred embodiment of the cathode 180 is a laminate of ultra-thin metal and conductive metal oxide, such as IZO / Ag, wherein the thickness of Ag can be 5nm to 20nm, and the thickness of IZO can be 20nm to 80nm. Through the design of the laminate, it is possible to prevent the loss of light energy (reflection, metal surface plasmon loss) caused by an overly thick metal layer, and to prevent the problem of insufficient conductivity caused by only conductive metal oxide.

[0045] In some embodiments of the present application, the functional layer 170 includes a light-emitting layer, and the light-emitting layer is arranged between the second anode 152 and the cathode 180. The light-emitting layer can be a quantum dot light-emitting layer or an organic light-emitting layer. When the light-emitting layer is a quantum dot light-emitting layer, the optoelectronic device is a quantum dot light-emitting device. Through the organic combination of the light-emitting layer and other functional layers 170, the light-emitting layer can emit a target light color after a current is passed through it. Since these lights are generated by countless exciton transitions in the light-emitting layer, its light source is a dipole emission model, and the emission direction of the light is in all directions. Therefore, for the top-emitting OLED device shown in the figure, in addition to the light emitted to the top surface and reflected back to the top surface from the second anode 152, a part of the light will enter the second dam 160 through the waveguide mode. Since this part of light basically propagates horizontally, if the above-mentioned first dam 140 and the above-mentioned first reflective anode 151 are not provided, it will basically be consumed in the second dam 160 and become a part of the light efficiency loss; however, by providing the above-mentioned first dam 140 and the above-mentioned first anode 151 covering it, even after the light enters the interior of the second dam 160, the light can still be guided to the light output surface through the first reflective anode 151, thereby effectively improving the light output efficiency of the optoelectronic device.

[0046] The material of the quantum dot light-emitting layer may be a quantum dot known in the art for use in a quantum dot light-emitting layer, such as one of a red quantum dot, a green quantum dot and a blue quantum dot. Optionally, the material of the quantum dot light-emitting layer is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, and the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgS At least one of CdS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS , SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, At least one of AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2. The core of the quantum dot with core-shell structure includes any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dot with core-shell structure includes CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS and at least one of the above-mentioned single-structure quantum dots.The material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0047] Optionally, the thickness of the light-emitting layer can be the thickness of the light-emitting layer in a conventional quantum dot light-emitting device. For example, the thickness of the light-emitting layer can range from 10nm to 60nm. For example, the thickness of the light-emitting layer can be 10nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm or 60nm, etc., or the thickness of the light-emitting layer can range from 10nm to 25nm.

[0048] In some embodiments of the present application, the functional layer 170 further includes a hole transport layer, which is disposed between the second anode 152 and the light-emitting layer. The material of the hole transport layer may include at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, non-doped graphene, and C60. The thickness of the hole transport layer can be the thickness of the hole transport layer in a conventional optoelectronic device, for example, the thickness range of the hole transport layer is 10nm to 100nm, for example, the thickness of the hole transport layer can be 10nm, 25nm, 30nm, 40nm, 50nm, 60nm or 100nm, etc.; or, the thickness range of the hole transport layer can be 20nm to 60nm.

[0049] In some embodiments of the present application, the functional layer 170 further includes a hole injection layer, which is disposed between the second anode 152 and the light-emitting layer. Optionally, the material of the hole injection layer may include at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, non-doped graphene, and C60. The thickness of the hole injection layer can be the thickness of a conventional hole injection layer, for example, the thickness range of the hole injection layer is 20nm to 80nm, for example, the thickness of the hole injection layer can be 20nm, 30nm, 40nm, 50nm, 60nm or 80nm, etc.; or, the thickness range of the hole injection layer can be 20nm to 60nm.

[0050] In the embodiment where the functional layer 170 includes both a hole transport layer and a hole injection layer, the hole transport layer is disposed between the second anode 152 and the light emitting layer, and the hole injection layer is disposed between the second anode 152 and the hole transport layer.

[0051] In some embodiments of the present application, the functional layer 170 further includes an electron transport layer, which is disposed between the cathode 180 and the light-emitting layer. Optionally, the material of the electron transport layer may include an inorganic material and / or an organic material, wherein the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, and the doped element includes one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds. The thickness of the electron transport layer may be the thickness of a conventional electron transport layer, for example, the thickness of the electron transport layer ranges from 20 nm to 35 nm, for example, the thickness of the electron transport layer may be 20 nm, 25 nm, 30 nm or 35 nm.

[0052] In some embodiments of the present application, the functional layer 170 further includes an electron injection layer, which is disposed between the cathode 180 and the light-emitting layer. Optionally, the material of the electron injection layer may include an inorganic material and / or an organic material, wherein the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate, and the doped element includes one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium; and the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds. The thickness of the electron injection layer may be the thickness of a conventional electron injection layer, for example, the thickness of the electron injection layer may range from 10 nm to 30 nm, for example, the thickness of the electron injection layer may be 10 nm, 20 nm or 30 nm.

[0053] In the embodiment where the functional layer 170 includes both an electron transport layer and an electron injection layer, the electron transport layer is disposed between the cathode 180 and the light emitting layer, and the electron injection layer is disposed between the cathode 180 and the electron transport layer.

[0054] It is understandable that, in addition to the above-mentioned functional layers 170, some functional layers 170 conventionally used in optoelectronic devices that help improve the performance of optoelectronic devices may be added, such as hole blocking layers, interface modification layers, etc. The materials and thickness of each functional layer 170 of the optoelectronic device may be adjusted according to the light-emitting requirements of the optoelectronic device.

[0055] See also Figure 7 In some embodiments of the present application, the display panel further includes a display driver 120 disposed on the substrate 110, and the pixel defining layer 100, the anode, the functional layer 170 and the cathode 180 are all disposed on the surface of the display driver 120 away from the substrate 110, and the anode is electrically connected to the display driver 120. The display driver 120 generally refers to a driving circuit system formed by processing various functional films or semiconductor materials, generally including components such as transistors, wires and capacitors. The capacitor is an important component of the display driver 120, and the larger the capacitance, the more conducive to display driving. The function of the display driver 120 is to convert the image signal into different voltages / currents through signal writing and control, and control the photoelectric device to emit light of different brightness to form a display screen. Here, the display driver 120 includes a thin film transistor (TFT) as an example for explanation. The display driver 120 generally includes an active layer, a gate insulating layer, a gate layer, an intermediate dielectric layer, a source / drain electrode layer, a passivation layer and a planarization layer.

[0056] Optionally, the display driver device 120 includes a first capacitor 130, a second dam 160, a first anode 151 and a cathode 180 to form a second capacitor 190, the first anode 151 is electrically connected to one of the electrodes of the first capacitor 130, and the potential of the cathode 180 is the same as the potential of the other electrode of the first capacitor 130. Through such a setting, the first capacitor 130 and the second capacitor 190 can form two capacitors in parallel, so that the capacitance is increased in a direction perpendicular to the front of the substrate 110 without increasing the pixel size, the window of the drive design is increased, and it is helpful to improve the overall performance of the display panel. Among them, the first capacitor 130 can be composed of two conductive films with overlapping areas in the vertical direction and a dielectric layer sandwiched therebetween. In addition, in order to effectively connect the second anode 152 to the transistor in the display driver device 120 and connect the second anode 152 in parallel with the first capacitor 130, such as Figure 7 As shown, a via hole 121 connection structure may be formed outside the first dam 140 and the second dam 160 , and the first anode 151 and the second anode 152 may be extended toward the via hole 121 , thereby ensuring corresponding electrical connection of the anodes.

[0057] See also Figure 8 The present application also provides a method for preparing a display panel, and the method for preparing a display panel includes the following steps:

[0058] Step S10: providing a substrate 110, forming a plurality of first dams 140 distributed at intervals on the substrate 110, and forming openings on sidewalls of the plurality of first dams 140;

[0059] Step S20: forming an anode on the substrate 110, the anode comprising a first anode 151 covering the first dam 140 and a second anode 152 located in the opening, with a gap between the second anode 152 and the first anode 151, so that the second anode 152 and the first anode 151 are electrically isolated and are not conductive to each other;

[0060] Step S30: forming a second bank 160 covering the first anode 151 on the substrate 110;

[0061] Step S40: forming a functional layer 170 on a surface of the second anode 152 away from the substrate 110;

[0062] Step S50: forming a cathode 180 on the second bank 160 and the functional layer 170 to obtain a display panel.

[0063] Optionally, in step S10 , forming a plurality of first dams 140 distributed at intervals on the substrate 110 includes: forming a display driver device 120 on the substrate 110 ; and forming a plurality of first dams 140 distributed at intervals on a surface of the display driver device 120 away from the substrate 110 .

[0064] In some embodiments of the present application, the functional layer 170 includes a light-emitting layer, and forming the functional layer 170 on the surface of the second anode 152 away from the substrate 110 (ie, step S40 ) includes: forming a light-emitting layer on the surface of the second anode 152 away from the substrate 110 .

[0065] In some embodiments of the present application, the functional layer 170 further includes a hole transport layer, a hole injection layer, an electron transport layer and / or an electron injection layer. The functional layer 170 is formed on the surface of the second anode 152 away from the substrate 110 (i.e., step S40) includes: sequentially forming a stacked hole transport layer and a light-emitting layer on the surface of the second anode 152 away from the substrate 110; or sequentially forming a stacked hole injection layer and a light-emitting layer on the surface of the second anode 152 away from the substrate 110; or; sequentially forming a stacked hole injection layer on the surface of the second anode 152 away from the substrate 110 , hole transport layer and light-emitting layer; or a light-emitting layer and an electron transport layer are sequentially formed on the surface of the second anode 152 away from the substrate 110; or a light-emitting layer and an electron injection layer are sequentially formed on the surface of the second anode 152 away from the substrate 110; or a hole injection layer, a hole transport layer, a light-emitting layer and an electron transport layer are sequentially formed on the surface of the second anode 152 away from the substrate 110; or a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer are sequentially formed on the surface of the second anode 152 away from the substrate 110.

[0066] Specifically, in the above steps, the method of forming the first anode 151, the second anode 152, the cathode 180, the light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer can be implemented by conventional techniques in the art, including but not limited to solution method and deposition method, wherein the solution method includes but is not limited to spin coating, coating, inkjet printing, scraping, dip pulling, soaking, spraying, rolling or casting; the deposition method includes chemical method and physical method, the chemical method includes but is not limited to chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method or coprecipitation method. Physical methods include but are not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method or pulsed laser deposition method. When the above-mentioned layer structures are prepared by solution method, a drying process needs to be added. Among them, the drying process can be an annealing process. Among them, the "annealing process" includes all treatment processes that can enable the wet film to obtain higher energy, thereby changing from a wet film state to a dry state. For example, the "annealing process" can only refer to a heat treatment process, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the wet film to fully evaporate; for example, the "annealing process" can also include a heat treatment process and a cooling process performed in sequence, that is, heating the wet film to a specific temperature, and then maintaining it for a specific time to allow the solvent in the first wet film to fully evaporate, and then cooling it at an appropriate speed to eliminate residual stress and reduce the risk of layer deformation and cracks in the dried film.

[0067] Among them, the materials of each layer such as the first anode 151, the second anode 152, the cathode 180, the light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer can refer to the relevant description in the previous text and will not be repeated here.

[0068] The embodiment of the present application also provides a display device, which includes the display panel described above. Since the display device adopts all the technical solutions of all the above embodiments, it at least has all the beneficial effects brought by the technical solutions of the above embodiments, which will not be repeated here. Optionally, the display device can be any electronic product with a display function, and the electronic products include but are not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0069] The following is a detailed description of the method for preparing the display panel of the present application through specific embodiments. The following embodiments are only some embodiments of the present application and do not specifically limit the present application. The method for preparing the display panel specifically includes the following steps:

[0070] Step S1 : forming a display driving device 120 on a substrate 110 .

[0071] like Fig. 9 As shown, the display driver device 120 is completed using a conventional display driver array manufacturing process, including an active layer, a gate insulating layer, a gate layer (including one of the electrodes of the first capacitor 130), an intermediate dielectric layer (also serving as a dielectric layer of the first capacitor 130), a source-drain electrode layer (also including another electrode of the first capacitor 130), a passivation layer, a planarization layer, and patterning of the above film layers.

[0072] In order to better form the display panel of the present application, the patterning step of the planarization layer is only performed to the exposure stage without performing the development process, because in general, the patterning of the planarization layer is to form a via 121 structure that provides an electrical connection between the conductive layer such as the anode and the display driver device 120. If the patterning of the first dam 140 uses a nanoimprint process, the first dam 140 will still remain in the via 121 after patterning due to the presence of the via 121, resulting in the upper electrode such as the anode being unable to be connected to the display driver device 120. Moreover, when the via 121 is deep and the hole is small, it is also easy to make the film deposited thereon using the chemical vapor deposition method thicker than the film in the non-via area, which is not conducive to ensuring the completeness of the patterning.

[0073] Step S2 : coating a first dam film layer 140 ′ on the display driving device 120 .

[0074] like Fig.10 As shown, the first dam film layer 140' is deposited on the substrate 110 by using common coating methods such as magnetron sputtering, evaporation, chemical vapor deposition, slit coating, spin coating or inkjet printing. In the process for printing the first dam film layer 140', a preferred solution is to use chemical vapor deposition to make a 0.1μm to 0.5μm SiOx film, which is a hydrophilic film layer used to separate each pixel in the same line type, so that the ink printed into the dam can be effectively spread and form a film in the opening formed after the SiOx is patterned during the curing process. Another preferred solution is to use polydimethylsiloxane (PDMS) to coat the film, and form a plurality of first dams 140 with a precise three-dimensional structure by a transfer template during the patterning process.

[0075] Step S3: patterning the first bank film layer 140 ′.

[0076] like Fig.11As shown, a photolithography process or a nano-imprinting method is used to form a plurality of first dams 140 distributed at intervals on the first dam film layer 140'. In a preferred embodiment of the present application, the first dam film layer 140' is patterned using a nano-imprinting method, so that the sidewall of the first dam 140 has a micro-pattern, such as Fig.12 As shown, the side wall of the first dam 140 has a structure with a slightly concave bottom and a slightly convex upper part. Such a structure allows more light emitted by the optoelectronic device to be emitted in a vertical direction after it is irradiated by the side wall of such a shape. This can effectively prevent a portion of light from being unable to be emitted into the air due to total reflection conditions achieved from obliquely incident from a light-dense medium (such as the functional layer 170 material) to a light-sparse medium (such as air), thereby reducing the light extraction efficiency (i.e., light extraction efficiency).

[0077] Step S4: patterning the planarization layer in the display driver device 120 .

[0078] like Fig.13 As shown, the via hole 121 ′ pattern exposed but not developed in step S1 is developed using the developing step of the photolithography process to make the via hole 121 pattern visible, so as to facilitate the electrical connection between the anode and other conductive layers and the display driver device 120 .

[0079] Step S5: forming an anode film layer 150 on the first bank 140 and patterning the anode film layer 150 .

[0080] like Fig.14 and Fig.15 As shown, the anode film layer 150 and its stack are formed by conventional coating methods such as physical vapor deposition and evaporation, and then the anode film layer 150 is patterned by coating, exposure, development, etching and stripping (photolithography process) to form the first anode 151 and the second anode 152. The second anode 152 is the anode part of the optoelectronic device, and the first anode 151 is the reflective layer that wraps the first dam 140 and one of the electrodes of the second capacitor 190. Among them, the second anode 152 is connected to the transistor in the display driver device 120, and the switch of the transistor controls whether the optoelectronic device works; the first anode 151 is connected to the first capacitor 130 in the display driver device 120, so that the second capacitor 190 is connected in parallel with the first capacitor 130, thereby improving the overall capacitance of the display panel and the display device.

[0081] Step S6: forming a second bank film layer on the first anode 151 and patterning the film.

[0082] like Fig.16As shown, the second dam 160 film layer is patterned by using the processes of coating, exposure, development, etching and stripping (photolithography process), so that the patterned second dam 160 film layers form opening structures that can accommodate the photoelectric device ink and the photoelectric device thin film formed by the ink. Furthermore, the second dam 160 wraps almost all parts of the effective display area except the second anode 152 area, preventing the subsequently deposited functional layer 170 and cathode 180 from forming an electrical connection with the first anode 151.

[0083] Step S7 : forming a functional layer 170 in the plurality of openings formed by the plurality of second banks 160 .

[0084] like Fig.17 As shown, the functional layer 170 may be formed in the plurality of openings formed by the plurality of second banks 160 by using a method such as evaporation or inkjet printing.

[0085] Step S8: forming a cathode 180 on the functional layer 170 and the second bank 160 to obtain a display panel.

[0086] Specifically, the cathode 180 can be formed on the functional layer 170 and the second dam 160 by using evaporation, physical vapor deposition, etc. to obtain a display panel (such as Figure 1 The cathode 180 is generally connected to the display driver 120 in the peripheral area (non-effective display area) of the display panel.

[0087] The technical scheme and technical effects of the present application will be described in detail below through specific examples and comparative examples. The following examples are only some examples of the present application and do not specifically limit the present application.

[0088] Example 1

[0089] The present embodiment 1 provides a display panel, and the manufacturing method of the display panel comprises the following steps:

[0090] Step S101: providing a glass substrate;

[0091] Step S102: forming a display driver device 120 on a glass substrate;

[0092] Step S103: forming a plurality of first dams 140 with a thickness of 0.1 μm on the display driving device 120;

[0093] Step S104: forming a first anode 151 on the first dam 140 , and forming a second anode 152 between two adjacent first dams 140 ;

[0094] Step S105: forming a second bank 160 on the first anode 151;

[0095] Step S106: forming a light-emitting layer on the second anode 152;

[0096] Step S107: forming a cathode 180 on the light emitting layer and the second bank 160,

[0097] Step S108: Packaging to obtain a display panel.

[0098] Example 2

[0099] The second embodiment is substantially the same as the first embodiment, except that in the second embodiment, the thickness of the first dam 140 is 0.5 μm.

[0100] Example 3

[0101] The third embodiment is substantially the same as the first embodiment, except that in the third embodiment, the thickness of the first dam 140 is 1 μm.

[0102] Example 4

[0103] The fourth embodiment is substantially the same as the first embodiment, except that in the fourth embodiment, the thickness of the first dam 140 is 1.5 μm.

[0104] Example 5

[0105] The fifth embodiment is substantially the same as the first embodiment, except that in the fifth embodiment, the thickness of the first dam 140 is 2 μm.

[0106] Comparative Example 1

[0107] This comparative example 1 is basically the same as Example 1, except that: this comparative example 1 does not set the first dam 140 and the first anode 151, that is, this comparative example 1 directly forms a plurality of second dams 160 on the display driver device 120, forms a second anode 152 between two adjacent second dams 160, forms a light-emitting layer on the second anode 152, and finally forms a cathode 180 on the light-emitting layer and the second dam 160 to obtain a display panel.

[0108] Performance tests were performed on the display panels of Examples 1 to 5 and Comparative Example 1. The performance test items included the brightness and capacitance of the display panels. The test results are shown in Table 1.

[0109] The brightness test method is as follows: use a CS-2000A brightness meter to measure the brightness of each optoelectronic device.

[0110] The test method of capacitance is as follows: use an impedance analyzer to measure the capacitance value of each display panel. Specifically, the display panel with the same structure as the display area made at the edge of the non-display area or the display area should be tested, and the display panel has a dedicated lead to lead out the three ports of the parallel capacitor (i.e., "the lower electrode of the first capacitor", "the upper electrode of the second capacitor" and "the electrode connected to the upper electrode of the first capacitor / the lower electrode of the second capacitor") and is made into a pad through a via for probe contact.

[0111] Table 1

[0112] <![CDATA[Brightness (cd / m 2 )]]> Capacitance(pF) Example 1 1039.4 0.513 Example 2 1084.8 0.522 Example 3 1080.8 0.526 Example 4 1080.0 0.530 Example 5 1080.0 0.533 Comparative Example 1 1033.2 0.354

[0113] It can be seen from Table 1 that the display panels of Examples 1 to 5 are significantly improved in terms of brightness and capacitance compared to Comparative Example 1, indicating that the display panels of Examples 1 to 5 have higher light extraction efficiency and larger capacitance than the display panel of Comparative Example 1.

[0114] The brightness of the display panels of Examples 1 to 5 is greater than that of Comparative Example 1. The reason may be that in Examples 1 to 5, the first dam 140 and the first anode 151 are arranged inside the second dam 160, and the first anode 151 covers the first dam 140 to form a three-dimensional reflective structure. When part of the light emitted by the optoelectronic device enters the second dam 160, the light can be guided to the light-emitting surface of the optoelectronic device through reflection by the first anode 151, thereby effectively improving the brightness of the display panel. However, in Comparative Example 1, the first dam 140 and the first anode 151 covering the first dam 140 are not arranged inside the second dam 160.

[0115] The display panel capacitance of Examples 1 to 5 is greater than that of Comparative Example 1. The reason may be that in Examples 1 to 5, the first dam 140 and the first anode 151 covering the first dam 140 are arranged inside the second dam 160, and the second dam 160, the first anode 151 and the cathode 180 form a second capacitor 190. The second capacitor 190 and the first capacitor 130 of the display driver device 120 form two capacitors in parallel, thereby increasing the capacitance; while in Comparative Example 1, the first dam 140 and the first anode 151 covering the first dam 140 are not arranged inside the second dam 160.

[0116] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0117] In the description of this application, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more features. The term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0118] The display panel, the method for preparing the display panel and the display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: include: substrate; A pixel defining layer is disposed on the substrate, the pixel defining layer comprises a plurality of first dams and a plurality of second dams, the plurality of first dams are spaced apart, the second dams cover the first dams, and the sidewalls of the plurality of second dams form openings; an anode, the anode comprising a first anode and a second anode, the first anode being disposed between the first dam and the second dam and covering the first dam, and the second anode being disposed in the opening; a functional layer, the functional layer being disposed on a surface of the second anode away from the substrate; A cathode covers the second bank and the functional layer.

2. The display panel according to claim 1, characterized in that: A side wall of the first anode close to the substrate is concave inward, and a side wall of the first anode away from the substrate is convex outward; and / or, The visible light reflectivity of the first anode is 95% to 100%.

3. The display panel according to claim 1, characterized in that: The longitudinal cross-section of the first dam is trapezoidal or rectangular.

4. The display panel according to claim 1, characterized in that: The thickness of the first anode is 50 nm to 150 nm; and / or, The thickness of the second anode is 50 nm to 150 nm; and / or, The thickness of the first dam is 0.1 μm to 2 μm; and / or, The thickness of the second bank is 0.1 μm to 2 μm.

5. The display panel according to claim 1, characterized in that: The display panel further comprises a display driver device disposed on the substrate, the pixel defining layer, the anode, the functional layer and the cathode are disposed on a surface of the display driver device away from the substrate, and the anode is electrically connected to the display driver device.

6. The display panel according to claim 5, characterized in that: The display driving device includes a first capacitor, the second dam, the first anode and the cathode form a second capacitor, the first anode is electrically connected to one of the electrodes of the first capacitor, and the potential of the cathode is the same as the potential of the other electrode of the first capacitor.

7. The display panel according to any one of claims 1 to 6, characterized in that: The functional layer includes a light-emitting layer disposed between the second anode and the cathode.

8. The display panel according to claim 7, characterized in that: The materials of the first dam and the second dam are independently selected from one of polyimide, phenolic resin, epoxy resin, polyacrylic acid, polydimethylsiloxane, silicon nitride, silicon oxynitride, silicon oxide and silicon oxycarbide; And / or, the first anode is selected from a composite electrode formed by one or more of a metal electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca and Mg; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; And / or, the second anode and the cathode are independently selected from a composite electrode formed by one or more of a metal electrode, a carbon electrode and a doped or undoped metal oxide electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Ti, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, IZO, MZO and at least one of AMO; the material of the composite electrode is selected from at least one of IZO / Ag, IZO / Ag / IZO, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; And / or, the light-emitting layer is a quantum dot light-emitting layer or an organic light-emitting layer, the material of the quantum dot light-emitting layer is selected from at least one of a single structure quantum dot and a core-shell structure quantum dot, the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, At least one of ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbS ... At least one of SnPbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlP At least one of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; and / or, The core of the core-shell structured quantum dots includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell structured quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS and the above-mentioned single-structured quantum dots; the material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, The functional layer further includes a hole transport layer, which is arranged between the second anode and the light-emitting layer, and the material of the hole transport layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60; and / or, The functional layer further includes a hole injection layer, which is arranged between the second anode and the light-emitting layer, and the material of the hole injection layer includes at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60; and / or, The functional layer further comprises an electron transport layer, which is arranged between the cathode and the light-emitting layer. The material of the electron transport layer comprises an inorganic material and / or an organic material. The inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate. The doped element comprises one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium. The organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds. And / or, The functional layer also includes an electron injection layer, which is arranged between the cathode and the light-emitting layer. The material of the electron injection layer includes inorganic materials and / or organic materials. The inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide and barium titanate. The doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium and gadolinium. The organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds and hydroxyquinoline compounds.

9. A method for preparing a display panel, characterized in that: The preparation method comprises the following steps: Providing a substrate, forming a plurality of first dams distributed at intervals on the substrate, and forming openings on side walls of the plurality of first dams; forming an anode on the substrate, the anode comprising a first anode covering the first dam and a second anode located in the opening, with a gap between the second anode and the first anode; forming a second bank covering the first anode on the substrate; forming a functional layer on a surface of the second anode away from the substrate; A cathode is formed on the second bank and the functional layer to obtain a display panel.

10. The preparation method according to claim 9, characterized in that: The forming of a plurality of first dams spaced apart on the substrate comprises: forming a display driver device on the substrate; A plurality of first dams distributed at intervals are formed on a surface of the display driving device away from the substrate.

11. The preparation method according to claim 9 or 10, characterized in that: The functional layer includes a light-emitting layer, and forming the functional layer on a surface of the second anode away from the substrate includes: A light emitting layer is formed on a surface of the second anode away from the substrate.

12. The preparation method according to claim 11, characterized in that: The functional layer further includes a hole transport layer, and forming the functional layer on the surface of the second anode away from the substrate includes: The hole transport layer and the light emitting layer are sequentially stacked on the surface of the second anode away from the substrate; and / or, The functional layer further includes a hole injection layer, and the forming of the functional layer on the surface of the second anode away from the substrate includes: The hole injection layer and the light emitting layer are sequentially stacked on the surface of the second anode away from the substrate; and / or, The functional layer further includes an electron transport layer, and forming the functional layer on the surface of the second anode away from the substrate includes: The light-emitting layer and the electron transport layer are sequentially stacked on a surface of the second anode away from the substrate; and / or, The functional layer further includes an electron injection layer, and forming the functional layer on the surface of the second anode away from the substrate includes: The light emitting layer and the electron injection layer are sequentially stacked on a surface of the second anode away from the substrate.

13. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 8, or the display device comprises the display panel manufactured by the manufacturing method according to any one of claims 9 to 13.

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