The objective of this invention is to provide a
silicon-containing
resist underlayer film forming composition for forming a
resist underlayer film in a
processing step such as a
semiconductor substrate, which can be stripped not only by conventional
dry etching methods but also by wet
etching methods using solutions such as dilute
hydrofluoric acid, buffered
hydrofluoric acid, and alkaline solutions. Furthermore, it provides a
photolithography resist underlayer film forming composition that exhibits excellent storage stability and leaves minimal residue during
dry etching processes. The solution is a resist underlayer film forming composition comprising a hydrolyzed condensate of a hydrolyzable
silane mixture, wherein the hydrolyzable
silane mixture comprises a hydrolyzable
silane as shown in formula (1) and an alkyltrialkoxysilane, and the content of the alkyltrialkoxysilane in the hydrolyzable silane mixture is 0 mol% or more and less than 40 mol% based on the total
molar number of all hydrolyzable
silanes contained in the hydrolyzable silane mixture. (In formula (1), R...) 1 "A group that bonds to a
silicon atom" indicates an organogroup comprising at least one group or skeleton selected from
succinic anhydride, vinyl, phenyl, and
isocyanuric acid skeletons, R 2 For groups that bond with
silicon atoms, each can independently represent a substituted
alkyl group, etc., R 3 For groups or atoms bonded to silicon atoms, each can be represented independently as an alkoxy, aralkyloxy, acyloxy, or
halogen atom, where 'a' represents 1, 'b' represents an integer from 0 to 2, and 4−(a+b) represents an integer from 1 to 3. 1 a R 2 b Si(R 3 ) 4‑(a+b) (1).