Semiconductor processing method and semiconductor device

Abstract

A semiconductor processing method and a semiconductor device, the semiconductor processing method comprising: forming a patterned mask layer having a mask opening on a substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer including a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on the patterned mask layer; removing the patterned mask layer and the sacrificial metal portion, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate having the patterned mask layer formed thereon is placed on a carrier plate of an evaporation apparatus, and the substrate rotates as the carrier plate rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier plate rotates in a first rotation direction during the first time period, and rotates in a second rotation direction opposite to the first rotation direction during the second time period. The semiconductor processing method can improve the morphology of the formed metal pattern.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a semiconductor processing method and a semiconductor device. Background Art

[0002] In the process of manufacturing semiconductor devices, the evaporation process is a common coating process, which can be used, for example, to deposit and form a material layer such as metal. For example, an evaporation process and a lift-off process can be used to fabricate a metal pattern, and the morphology of the metal pattern may directly affect the performance of semiconductor devices. Therefore, how to form a metal pattern with a better morphology during the evaporation process is an important research topic in this field. Summary of the Invention

[0003] According to at least one embodiment of the present disclosure, a semiconductor processing method is provided, including: providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer having a mask opening to expose a partial surface of the substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer including a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal part formed on a side of the patterned mask layer away from the substrate; and removing the patterned mask layer and the sacrificial metal part, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate with the patterned mask layer formed thereon is placed on a carrier plate of an evaporation device, and the substrate rotates as the carrier plate rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier plate rotates in a first rotation direction during the first time period, and rotates in a second rotation direction during the second time period, and the second rotation direction is opposite to the first rotation direction.

[0004] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first rotation direction is one of a clockwise direction and a counterclockwise direction, and the second rotation direction is the other of the clockwise direction and the counterclockwise direction.

[0005] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the evaporation time period includes one or more of the first time periods and one or more of the second time periods, and the first time periods and the second time periods are alternately arranged.

[0006] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the number of one or more first time periods is the same as the number of one or more second time periods; and / or the total time length of the one or more first time periods is the same as the total time length of the one or more second time periods.

[0007] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the metal pattern is a single-layer structure with a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process. In the first sub-evaporation process, a metal material with a first thickness is deposited in the first time period, then the rotation direction of the carrier plate is changed, and the second sub-evaporation process is performed in the second time period to deposit a metal material with a second thickness; the first sub-evaporation process and the second sub-evaporation process are alternately performed, and the overall thickness of the finally formed metal material layer reaches the target thickness.

[0008] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first thickness is equal to the second thickness.

[0009] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

[0010] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the metal pattern is a multi-layer structure and includes a plurality of metal sub-layers. The evaporation process includes a plurality of metal evaporation processes using a plurality of metal evaporation sources, and the plurality of metal sub-layers are respectively formed by the plurality of metal evaporation processes. After switching the metal evaporation source, the rotation direction of the carrier plate is changed.

[0011] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, the plurality of metal sub-layers include a first metal sub-layer and a second metal sub-layer. The material of the first metal sub-layer is different from the material of the second metal sub-layer. The first metal sub-layer is formed by a first metal evaporation process in the first time period, and the second metal sub-layer is formed by a second metal evaporation process in the second time period.

[0012] In the semiconductor processing method provided according to at least one embodiment of the present disclosure, in the first time period, the evaporation source used in the evaporation process has a first evaporation distance from the substrate, and metal deposition is performed on the substrate at a first evaporation angle; in the second time period, the evaporation source used in the evaporation process has a second evaporation distance from the substrate, and metal deposition is performed on the substrate at a second evaporation angle; wherein the first evaporation distance is the same as the second evaporation distance, and / or the first evaporation angle is the same as the second evaporation angle.

[0013] According to at least one embodiment of the present disclosure, a semiconductor device is provided, which is formed by the semiconductor processing method described above and includes: the substrate; and the metal pattern located on the substrate, wherein the metal pattern is a symmetric figure; or the metal pattern has a first sidewall and a second sidewall opposite to each other in a direction parallel to the main surface of the substrate, a first included angle is formed between the first sidewall and the main surface of the substrate, a second included angle is formed between the second sidewall and the main surface of the substrate, and the difference range between the first included angle and the second included angle is from 0 to 2°; or the ratio of the difference between the first included angle and the second included angle to the average value of the first included angle and the second included angle ranges from 0 to 2%.

[0014] The semiconductor processing method according to the embodiment of the present disclosure can improve the topography of the formed metal pattern, obtain a more symmetric pattern topography, and further improve the device performance of the formed semiconductor device. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure and do not limit the present disclosure.

[0016] Figure 1 A schematic diagram of an evaporation device is shown.

[0017] Figure 2 Show the use of Figure 1 A schematic cross-sectional view of a metal pattern formed on a substrate by an evaporation process and a stripping process using the evaporation device shown.

[0018] Figure 3 A schematic cross-sectional view of an evaporation device according to some embodiments of the present disclosure is shown.

[0019] Figure 4 A schematic cross-sectional view of an evaporation device according to some other embodiments of the present disclosure is shown.

[0020] Figure 5 A schematic cross-sectional view of the structure of the first step in the semiconductor processing method according to some embodiments of the present disclosure is shown.

[0021] Figure 6 A schematic cross-sectional view of the structure of the second step in the semiconductor processing method according to some embodiments of the present disclosure is shown.

[0022] Figure 7 A schematic cross-sectional view of the structure of the third step in the semiconductor processing method according to some embodiments of the present disclosure is shown.

[0023] Figure 8A schematic cross-sectional view showing the structure of the fourth step in a semiconductor processing method according to some embodiments of the present disclosure.

[0024] Figure 9A A schematic cross-sectional view showing a substrate and a metal pattern in a semiconductor device according to some embodiments of the present disclosure.

[0025] Figure 9B A schematic cross-sectional view showing a substrate and a metal pattern in a semiconductor device according to some other embodiments of the present disclosure.

[0026] Figure 10 A schematic flowchart showing a semiconductor processing method according to some embodiments of the present disclosure.

[0027] Figure 11 A picture showing a metal pattern formed on a substrate in an experimental example.

[0028] Figure 12 A picture showing a metal pattern formed on a substrate by a semiconductor processing method according to some embodiments of the present disclosure. Detailed Description of the Embodiments

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. Apparently, the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present disclosure without creative efforts shall fall within the scope of protection of the present disclosure.

[0030] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the ordinary meanings understood by those of ordinary skill in the art to which the present disclosure pertains. The terms "first", "second", and the like used in the present disclosure do not denote any order, quantity, or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0031] Figure 1 A schematic diagram showing an evaporation device; Figure 2 Show the use of Figure 1 A schematic cross-sectional view of a metal pattern formed on a substrate by an evaporation process and a lift-off process using the evaporation device shown.

[0032] Refer toFigure 1 , in some embodiments, the evaporation device includes a planetary disk 1, a carrier disk 2, and an evaporation source 3. The carrier disk 2 is connected to the planetary disk 1 and is used to carry the wafer 10. The carrier disk 2 and the wafer 10 carried thereon can rotate with the rotation of the planetary disk 1. The evaporation source 3 is disposed below the carrier disk 2 and is configured to provide the target metal to the wafer 10 during the evaporation process.

[0033] For example, the evaporation device may be an electron beam evaporation device. During the evaporation process, an electron beam is used to heat the metal evaporation source (or called the metal target), so that the metal evaporation source is vaporized into metal vapor, and the metal vapor reaches the surface of the wafer and condenses to form a metal thin film.

[0034] During the evaporation process, the carrier disk 2 and the wafer 10 carried thereon rotate with the rotation of the planetary disk 1, for example, they can rotate clockwise along the rotation direction 5 shown in the figure; rotating the carrier disk during the evaporation process can improve the uniformity of the deposited film layer. However, the continuous unidirectional rotation of the carrier disk throughout the evaporation process may cause the formed metal pattern to have an asymmetric morphology, which may in turn have an adverse impact on the device performance.

[0035] Figure 2 Schematically shows the metal pattern 11 formed on the wafer 10 due to the unidirectional rotation of the carrier disk during the evaporation process.

[0036] As Figure 2 shown, due to the continuous unidirectional rotation of the carrier disk during the evaporation process, the metal pattern 11 has an asymmetric morphology, for example, it is inclined towards the right side in the figure. For example, the metal pattern 11 has a first metal sidewall 11a and a second metal sidewall 11b. There is a first sidewall angle 7 between the first metal sidewall 11a and the main surface of the wafer 10, and a second sidewall angle 8 between the second metal sidewall 11b and the main surface of the wafer 10; the first sidewall angle 7 and the second sidewall angle 8 have a large difference, for example, they differ by about 3° or more. For example, in some examples, the first sidewall angle 7 is about 78°, and the second sidewall angle 8 is about 81°. In this example, the metal pattern 11 has a poor morphology, which may affect the performance of the formed semiconductor device.

[0037] Figure 3 and Figure 4 shows a schematic cross-sectional view of an evaporation device according to some embodiments of the present disclosure.

[0038] Figure 3 and Figure 4 The evaporation device 50 shown is the same as Figure 1The evaporation device shown is similar, except that the evaporation device 50 is configured such that its carrier disk rotates in different rotational directions during multiple time periods of the evaporation process, and the rotational directions of the planetary disk and the carrier disk in the evaporation device 50 can be set and controlled, for example, by a computer program.

[0039] For example, the evaporation device 50 includes a planetary disk 1, a carrier disk 2, and an evaporation source 3. The planetary disk 1 is configured to be rotatable in a first rotational direction 201 or in a second rotational direction 202. The carrier disk 2 is fixedly connected to the planetary disk 1 and is configured to carry a substrate 100. The evaporation source 3 is disposed on a side of the carrier disk 2 away from the planetary disk 1, is disposed opposite to the substrate 100, and is configured to be heated during evaporation to form a material vapor, for example, to form an evaporation beam 3a as shown in the figure. The material vapor (e.g., metal vapor) evaporates onto the surface of the substrate 100 and condenses on the substrate surface to deposit and form a film layer.

[0040] The substrate 100 is a substrate to be coated and is fixed to the carrier disk 2 during the evaporation process. In some embodiments, one or more carrier disks 2 may be connected to the planetary disk 1, and one or more substrates to be coated may be carried on each carrier disk 2.

[0041] For example, as Figure 3 shown, in some examples, a single carrier disk 2 is connected to the planetary disk 1, and multiple substrates 100 to be coated are carried on the carrier disk 2. In this example, the carrier disk 2 may be directly above the evaporation source 3 in the first direction D1, and the main surfaces of the carrier disk 2 and the substrate 100 may extend in a direction parallel to the main surface of the planetary disk or the evaporation source (e.g., a horizontal direction including the second direction D2). The second direction D2 intersects the first direction D1, for example, being substantially perpendicular to each other. For example, the first direction D1 is a direction substantially perpendicular to the main surface of the planetary disk or the evaporation source.

[0042] For example, as Figure 4 shown, in some other examples, multiple carrier disks 2 are connected to the planetary disk 1, and multiple substrates 100 to be coated are carried on each carrier disk 2. In this example, the carrier disks 2 may be connected to the planetary disk 1 in an inclined manner; for example, the extending direction of the main surfaces of the carrier disks 2 and the substrates 100 may intersect the extending direction of the main surface of the planetary disk 1 or the evaporation source 3. Performing the evaporation process with multiple carrier disks disposed on the planetary disk 1 can improve production capacity, and the multiple carrier disks being disposed in an inclined manner can help save space and enable deposition of coatings on multiple substrates located on the carrier disks.

[0043] It should be understood that Figure 3 and Figure 4 the number of carrier disks connected to the planetary disk and the number of substrates carried on each carrier disk shown in

[0044] An embodiment of the present disclosure provides a semiconductor processing method, including: providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer having a mask opening to expose a partial surface of the substrate; performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer including a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on a side of the patterned mask layer away from the substrate; and removing the patterned mask layer and the sacrificial metal portion, wherein the evaporation process is performed during an evaporation time period, and in the evaporation process, the substrate with the patterned mask layer formed thereon is placed on a carrier plate of an evaporation device, and the substrate rotates as the carrier plate rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier plate rotates in a first rotation direction during the first time period, and rotates in a second rotation direction during the second time period, and the second rotation direction is opposite to the first rotation direction.

[0045] In the semiconductor processing method of the embodiment of the present disclosure, by setting the carrier plate to rotate in opposite rotation directions in different time periods during the evaporation process, the problem of poor morphology of the metal pattern caused by the continuous single-direction rotation of the carrier plate can be avoided, and the formed metal pattern can have a better morphology, thereby improving the device performance of the formed semiconductor device.

[0046] Figures 5 to 8 A schematic cross-sectional view showing intermediate structures of respective steps in a semiconductor processing method according to some embodiments of the present disclosure. Figure 9A and Figure 9B A schematic partial enlarged cross-sectional view showing a semiconductor device formed using the semiconductor processing method of the embodiment of the present disclosure, and for example, it is Figure 7 a schematic enlarged view of region A. Figure 10 A flowchart showing a semiconductor processing method according to some embodiments of the present disclosure.

[0047] Referring to Figure 5 and Figure 10 , in a first step S01, a substrate is provided.

[0048] For example, a substrate 100 is provided. The substrate 100 may be a wafer; in some embodiments, the substrate 100 may be or include a semiconductor substrate, for example, may include a silicon substrate; in other embodiments, the substrate 100 may be or include a piezoelectric substrate, for example, may include piezoelectric materials such as lithium niobate and lithium tantalate.

[0049] Referring to Figure 6 and Figure 10, in the second step S02, a patterned mask layer is formed on the substrate, and the patterned mask layer has mask openings to expose a partial surface of the substrate.

[0050] For example, a patterned mask layer 103 is formed on a substrate 100. The patterned mask layer 103 has one or more mask openings 104 to expose a partial surface of the substrate 100. In some embodiments, the bottom width of the mask opening 104 (i.e., the width near the substrate side) may be greater than its top width (i.e., the width far from the substrate side); for example, the mask opening 104 may have a trapezoidal, inverted T-shaped or similar shape. For example, the patterned mask layer 103 may be a bilayer structure and may include a first mask layer 101 and a second mask layer 102. The first mask layer 101 is located on the substrate 100, and the second mask layer 102 is located on the side of the first mask layer 101 far from the substrate 100. The first mask layer 101 has a first sub-mask opening, and the second mask layer 102 has a second sub-mask opening. The first sub-mask opening and the second sub-mask opening are spatially connected to each other and jointly form the mask opening 104. The width of the first sub-mask opening is greater than the width of the second sub-mask opening, so that the mask opening 104 includes an undercut structure located between the second mask layer 102 and the substrate 100. It should be understood that the above "width" refers to the width in the direction parallel to the main surface of the substrate. Setting the mask opening 104 as above can make the subsequently formed metal pattern and the sacrificial metal part separated from each other, which is beneficial to the subsequent stripping process.

[0051] The patterned mask layer 103 may include a patterned photoresist layer, and the first mask layer 101 and the second mask layer 102 may include different types of photoresist materials. For example, the first mask layer 101 may include a negative photoresist, and the second mask layer 102 may include a positive photoresist. For example, the patterned mask layer 103 may be formed by sequentially forming a first mask material layer (e.g., a negative photoresist layer) and a second mask material layer (e.g., a positive photoresist layer) on the substrate 100; then performing an exposure process on the second mask material layer using a photomask, the photomask may have an opening pattern corresponding to the second sub-mask opening, in the exposure process, the first mask material layer is covered by the second mask material layer and is not exposed; thereafter, performing a development process on the mask material layer, the development process includes applying a developer to the mask material layer, the developer removes the exposed portion of the second mask material layer (e.g., the positive photoresist), thereby forming the second mask layer 102 having the second sub-mask opening; the second sub-mask opening exposes a portion of the first mask material layer, such that the developer can continue to remove a portion of the first mask material layer (e.g., the negative photoresist) through the second sub-mask opening, thereby forming the first mask layer 101 having the first sub-mask opening. For example, the removal amount of the first mask material layer can be controlled by controlling the amount of the developer applied and the development time, thereby controlling the size of the first sub-mask opening including the undercut structure.

[0052] Reference Figure 7 and Figure 10 , in the third step S03, an evaporation process is performed in an evaporation device to form a metal material layer on the substrate and the patterned mask layer, wherein in the evaporation process, the rotation direction of the carrier plate carrying the substrate in the evaporation device is switched at least once.

[0053] For example, as Figure 7 shown, an evaporation process is performed to form a metal material layer 105 on the substrate 100 and the patterned mask layer 103. The metal material layer 105 includes a metal pattern 105a and a sacrificial metal portion 105b; the metal pattern 105a is formed on the surface of the substrate 100 exposed by the mask opening, and the sacrificial metal portion 105b is formed on the side of the patterned mask layer 103 away from the substrate 100.

[0054] Reference Figure 7 , Figure 8 and Figure 10 , in the fourth step S04, the patterned mask layer and the sacrificial metal portion are removed.

[0055] For example, after the evaporation process, the patterned mask layer 103 and the sacrificial metal part 105b formed on the side of the patterned mask layer 103 away from the substrate 100 can be removed by a stripping process, thereby forming a metal pattern 105a on the substrate 100.

[0056] Reference Figure 3 、 Figure 4 and Figure 7 , for example, the evaporation process is carried out in the evaporation device 50 shown in Figure 3 or Figure 4 . In the evaporation process, the substrate 100 formed with the patterned mask layer 103 is placed (i.e., fixed) on the carrier plate 2, and the side of the substrate 100 with the mask layer faces the evaporation source 3; the metal target of the evaporation source 3 is heated by an electron beam, so that the metal target of the evaporation source 3 evaporates to form a metal vapor, for example, an evaporation beam 3a, and the evaporation beam 3a reaches the surface of the substrate 100 formed with the patterned mask layer, thereby condensing and forming a metal material layer 105 on the substrate 100 and the patterned mask layer 103.

[0057] During the evaporation process, the substrate 100 rotates with the rotation of the carrier plate 2 and the planetary disk 1, so that the metal vapor can reach multiple substrates 100 located in various regions of the carrier plate evenly. In some embodiments, the evaporation process is carried out during an evaporation time period, the evaporation time period includes a first time period and a second time period, and in the first time period, the planetary disk 1 drives the carrier plate 2 and the substrate 100 to rotate along a first rotation direction 201, and in the second time period, the planetary disk 1 drives the carrier plate 2 and the substrate 100 to rotate along a second rotation direction 202. The second rotation direction 202 is opposite to the first rotation direction 201.

[0058] In some embodiments, the first rotation direction is one of the clockwise direction and the counterclockwise direction, and the second rotation direction is the other of the clockwise direction and the counterclockwise direction.

[0059] For example, as shown in the figure, the first rotation direction 201 is the clockwise direction and the second rotation direction 202 is the counterclockwise direction; in other examples, the first rotation direction 201 can also be the counterclockwise direction, and the second rotation direction 202 is correspondingly the clockwise direction. It should be understood that the first time period and the second time period are adjacent time periods. That is to say, the rotation direction of the carrier plate is changed after the evaporation process has been carried out for a period of time. In this article, the first time period refers to the time period during which the carrier plate rotates along the first rotation direction, and the second time period refers to the time period during which the carrier plate rotates along the second rotation direction.

[0060] By rotating the carrier plate in two opposite directions during the evaporation process, the formed metal pattern can be prevented from tilting towards one side, and the formed metal pattern 105a can have a more symmetrical morphology.

[0061] In some embodiments, the evaporation time period may include one or more first time periods and one or more second time periods, and the first time period and the second time period are alternately arranged. For example, the evaporation time period may include one first time period and one second time period, that is, the carrier plate switches the rotation direction once during the entire evaporation process. For example, the evaporation time period may include multiple first time periods and / or multiple second time periods, that is, the carrier plate may switch the rotation direction multiple times during the entire evaporation process. For example, multiple time periods may be sequentially set as the first time period, the second time period, the first time period, the second time period... and so on.

[0062] That is to say, during the evaporation process, the rotation direction of the carrier plate is switched at least once, and in some examples, the rotation direction of the carrier plate can also be switched multiple times. Herein, switching the rotation direction of the carrier plate includes switching the rotation direction of the carrier plate from the first rotation direction to the second rotation direction, or switching the rotation direction of the carrier plate from the second rotation direction to the first rotation direction.

[0063] In some embodiments, the number of one or more first time periods is the same as the number of one or more second time periods; and / or the total time length of one or more first time periods is the same as the total time length of one or more second time periods. For example, the switching frequency, specific number, and time length of the first time period and the second time period can be set according to the material and thickness of the metal film layer to be formed; moreover, by setting the first time period and the second time period to have the same number and / or time length, it is further beneficial to form a more symmetrical metal morphology.

[0064] In some embodiments, the metal pattern is a single-layer structure with a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process. The first sub-evaporation process deposits a metal material with a first thickness during the first time period, then changes the rotation direction of the carrier plate, and performs the second sub-evaporation process during the second time period to deposit a metal material with a second thickness; the first sub-evaporation process and the second sub-evaporation process are alternately performed, and the overall thickness of the finally formed metal material layer reaches the target thickness. For example, the first thickness and the second thickness are equal. For example, the first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

[0065] Reference Figure 7 and Figure 8, for example, the metal pattern 105a may be a single-layer structure, that is, it includes a single metal material and has a target thickness T0; during the process of evaporating to form the metal material layer, when the process reaches a certain time, that is, after evaporating a certain thickness (a thickness less than the target thickness) of the metal material, the rotation direction of the carrier plate can be switched, and the evaporation process can continue; during the entire evaporation process, the rotation direction of the carrier plate can be switched one or more times, and finally a metal material layer with the target thickness is formed.

[0066] For example, the evaporation process may include a first sub-evaporation process and a second sub-evaporation process. The first sub-evaporation process deposits and forms a metal material with a first thickness T1 during a first time period, where the carrier plate rotates in a first rotation direction; then, the rotation direction of the carrier plate is changed. For example, the rotation direction of the carrier plate can be changed by a computer program control; during a second time period, the carrier plate rotates in a second rotation direction and the second sub-evaporation process is performed to deposit and form a metal material with a second thickness T2; the first sub-evaporation process and the second sub-evaporation process can be alternated, and the overall thickness of the finally formed metal material layer reaches the target thickness T0. In this example, since the metal pattern is a single-layer structure, the metal materials deposited and formed by the first sub-evaporation process and the second sub-evaporation process are the same as each other, and the same evaporation source can be used; for example, except for the different rotation directions of the carrier plate, other process conditions and parameters, etc. in the first sub-evaporation process and the second sub-evaporation process can be substantially the same.

[0067] In some examples, the evaporation process may include at least one first sub-evaporation process and at least one second sub-evaporation process. For example, the evaporation process includes one sub-evaporation process and one second sub-evaporation process, that is, the sum of the first thickness T1 and the second thickness T2 may be equal to the target thickness T0; in other examples, the evaporation process may include multiple first sub-evaporation processes and / or multiple second sub-evaporation processes, and the sum of the metal material thicknesses accumulated by the multiple sub-evaporation processes is equal to the target thickness T0. That is, the target thickness T0 may be equal to the sum of one or more first thicknesses T1 and one or more second thicknesses T2. In some embodiments, the number of times of the first sub-evaporation process may be equal to the number of times of the second sub-evaporation process.

[0068] In some embodiments, the first thickness T1 may be approximately equal to the second thickness T2. For example, the first thickness T1 and the second thickness T2 may each be approximately equal to 1 / N of the target thickness T0, where N may be an even number; in alternative embodiments, N may also be an odd number. That is, the deposition of the metal material with the target thickness is approximately evenly split into the depositions of the metal materials with multiple target sub-thicknesses, and each metal material with the target sub-thickness is deposited and formed by a corresponding sub-evaporation process, and the rotation direction of the carrier plate is opposite during adjacent sub-evaporation processes, thereby avoiding the problem of asymmetric metal morphology caused by the continuous unidirectional rotation of the carrier plate during the evaporation process, and enabling the metal pattern formed by multiple sub-evaporation processes to have a more symmetric morphology.

[0069] In some embodiments, the switching timing of the rotation direction of the carrier plate may be determined by time monitoring and / or thickness monitoring, etc. For example, the time required for the deposition of the metal material with the target thickness may be estimated, and the required time may be approximately evenly split into multiple time periods, and the rotation direction of the carrier plate is switched between adjacent time periods; for example, the rotation direction of the carrier plate may be switched when the evaporation process reaches half of the total time. In some other embodiments, the target thickness of the metal pattern may be approximately evenly split into multiple target sub-thicknesses, and during the evaporation process, the thickness of the deposited metal material may be detected by a detection device such as a material thickness detector, and when the detected thickness of the metal material reaches the target sub-thickness, the rotation direction of the carrier plate is switched, and then the subsequent evaporation process is continued. In some embodiments, when switching the rotation direction of the carrier plate, the evaporation process may be paused, and the switching setting of the rotation direction of the carrier plate may be performed through a computer program, and then the evaporation process is continued.

[0070] In some embodiments, the metal pattern is a multi-layer structure and includes multiple metal sub-layers, the evaporation process includes multiple metal evaporation processes using multiple metal evaporation sources respectively, and the multiple metal sub-layers are formed by the multiple metal evaporation processes respectively, and after switching the metal evaporation source, the rotation direction of the carrier plate is changed.

[0071] In some embodiments, the multiple metal sub-layers include a first metal sub-layer and a second metal sub-layer, the materials of the first metal sub-layer and the second metal sub-layer are different, and the first metal sub-layer is formed by a first metal evaporation process in the first time period, and the second metal sub-layer is formed by a second metal evaporation process in the second time period.

[0072] When the metal pattern is a multi-layer structure, after switching the metal evaporation source, the rotation direction of the carrier plate is changed. The evaporation process does not need to be paused specifically for switching the rotation direction of the carrier plate. Instead, the preparation for switching the rotation direction of the carrier plate can be carried out while switching the evaporation source. After the preparation for switching the evaporation source and the rotation direction is completed, the subsequent process can be carried out, thus saving time and accelerating the production efficiency.

[0073] For example, referring to Figure 7 and Figure 9B , in some embodiments, the metal material layer 105 (i.e., the metal pattern 105a and the sacrificial metal part 105b) is a multi-layer structure. For example, it may include a first metal sub-layer 105a1 and a second metal sub-layer 105a2. The first metal sub-layer 105a1 is formed on the substrate 100, and the second metal sub-layer 105a2 is formed on the side of the first metal sub-layer 105a1 away from the substrate 100. The materials of the first metal sub-layer 105a1 and the second metal sub-layer 105a2 are different and are formed using different metal evaporation sources. It should be understood that Figure 9B the number of material layers of the metal material layer shown is only for illustrative purposes, and the present disclosure is not limited thereto; in other embodiments, the metal material layer may also include more than two metal sub-layers, such as three metal sub-layers, and after each switching of the metal evaporation source, the rotation direction of the carrier plate is changed.

[0074] For example, in the evaporation process, the carrier plate is rotated in a first rotation direction during a first time period, and the first metal sub-layer 105a1 is formed through a first metal evaporation process; after the formation of the first metal sub-layer 105a1, the evaporation process is paused, the metal evaporation source is replaced, and at the same time, the rotation direction of the carrier plate is switched. For example, the rotation direction of the carrier plate in the next metal evaporation process can be set through a computer program; after the switching and setting of the metal evaporation source and the rotation direction of the carrier plate are completed, a second metal evaporation process is carried out to form the second metal sub-layer 105a2, where the carrier plate is rotated in a second rotation direction during the second metal evaporation process.

[0075] In some embodiments, during the first time period, there is a first evaporation distance between the evaporation source used in the evaporation process and the substrate, and metal deposition is performed on the substrate at a first evaporation angle; during the second time period, there is a second evaporation distance between the evaporation source used in the evaporation process and the substrate, and metal deposition is performed on the substrate at a second evaporation angle; wherein the first evaporation distance is the same as the second evaporation distance and / or the first evaporation angle is the same as the second evaporation angle. In some embodiments, the rotation speeds of the carrier plate in multiple time periods may be substantially the same as each other. As used herein, "evaporation distance" refers to the distance between the evaporation source and the substrate, that is, the distance that the evaporation beam reaches the main surface of the substrate; "evaporation angle" refers to the angle between the evaporation beam and the main surface of the substrate. Rotating the carrier plate in different rotation directions in different time periods, and simultaneously performing the evaporation process in different corresponding time periods with the same evaporation distance and / or the same evaporation angle and / or the same rotation speed can further help ensure that the formed metal pattern has a more symmetrical morphology.

[0076] In some embodiments, the metal material layer 105 may include metal materials such as aluminum, copper, and titanium. For example, when the metal material layer 105 (or the formed metal pattern) is a single-layer structure, the metal material layer 105 may be an aluminum layer or a copper layer. When the metal material layer 105 (or the formed metal pattern) is a multi-layer structure, the metal material layer 105 may be a stack of titanium and copper, such as a titanium / copper / titanium stack structure; or, the metal material layer 105 may be a stack of titanium and aluminum, such as a titanium / aluminum / titanium stack structure. It should be understood that the above materials and the number of material layers of the metal material layer 105 are only illustrative, and the present disclosure is not limited thereto. The semiconductor processing method of the present disclosure can be applied to the formation process of any suitable metal material pattern.

[0077] Embodiments of the present disclosure provide a semiconductor device formed by the above semiconductor processing method, and including: the substrate; and the metal pattern located on the substrate, wherein the metal pattern is a symmetric figure; or the metal pattern has a first sidewall and a second sidewall opposite to each other in a direction parallel to the main surface of the substrate, the first sidewall has a first included angle with the main surface of the substrate, the second sidewall has a second included angle with the main surface of the substrate, and the difference range between the first included angle and the second included angle is 0 to 2°; or the ratio of the difference between the first included angle and the second included angle to the average value of the first included angle and the second included angle ranges from 0 to 2%.

[0078] Figure 9A and Figure 9BSchematic cross-sectional views of a substrate and a metal pattern in a semiconductor device according to some embodiments of the present disclosure, formed using the semiconductor processing method described in any of the above embodiments. Among them Figure 9A Schematically shows an example where the metal pattern is a single-layer structure, Figure 9B Schematically shows an example where the metal pattern is a multi-layer structure. It should be understood that Figure 9A and Figure 9B only the substrate and the metal pattern in the semiconductor device are shown, and the semiconductor device may further include other components.

[0079] Referring to Figure 9A and Figure 9B , for example, the semiconductor device includes a substrate 100 and a metal pattern 105a. The metal pattern 105a is located on the substrate 100 and has a first sidewall S1 and a second sidewall S2 opposite to each other in a direction parallel to the substrate 100 (for example, the second direction D2). A first included angle A1 is formed between the first sidewall S1 and the main surface of the substrate 100, and a second included angle A2 is formed between the second sidewall S2 and the main surface of the substrate 100. In some embodiments, whether the metal pattern 105a formed by the above semiconductor processing method is a single-layer structure or a multi-layer structure, it can be generally a symmetric figure. For example, the difference range between the first included angle A1 and the second included angle A2 can be 0 to 2°, or it can also be 0 to 1.5° or 0 to 1°; for example, the ratio of the difference between the first included angle A1 and the second included angle A2 to the average value of the first included angle A1 and the second included angle A2 can be 0 to 2%, or it can also be 0 to 1.5% or 0 to 1%.

[0080] It should be understood that in Figures 1 to 9B , the metal pattern 105a is formed on the substrate 100. The substrate 100 can be or include a semiconductor substrate or a piezoelectric substrate; or, the substrate 100 can further include other material layers located between the semiconductor substrate or the piezoelectric substrate and the metal pattern 105a. That is to say, the metal pattern 105a can be directly formed on the semiconductor substrate or the piezoelectric substrate, or other material layers can also be formed between the metal pattern 105a and the semiconductor substrate or the piezoelectric substrate.

[0081] Figure 11 Shows a picture of a metal pattern formed on a substrate in an experimental example, where the metal pattern 11 is formed on the wafer 10 using an evaporation process, and the carrier disk rotates continuously in a single direction during the evaporation process. Figure 12 Shows a picture of a metal pattern formed on a substrate by the semiconductor processing method according to some embodiments of the present disclosure, where the metal pattern 105a is formed on the substrate 100 using an evaporation process, and the rotation direction of the carrier disk is switched at least once during the evaporation process.

[0082] Referring to Figure 11, the first included angle between the first metal sidewall of the metal pattern 11 formed in the experimental example (i.e., the left sidewall in the figure) and the main surface of the substrate is about 78.1°, and the second included angle between the second metal sidewall (i.e., the right sidewall in the figure) and the main surface of the substrate is about 81°; that is, the difference between the first included angle and the second included angle is about 2.9°, and the ratio of the difference between the first included angle and the second included angle to the average value of the first included angle and the second included angle (81° - 78.1°) / ((81° + 78.1°) / 2) is about 3.6%.

[0083] Reference Figure 12 , the first included angle between the first sidewall of the metal pattern 105a formed in the embodiment of the present disclosure (i.e., the left sidewall in the figure) and the main surface of the substrate is about 79.9°, and the second included angle between the second sidewall (i.e., the right sidewall in the figure) and the main surface of the substrate is about 81.1°; that is, the difference between the first included angle and the second included angle is about 1.2°, and the ratio of the difference between the first included angle and the second included angle to the average value of the first included angle and the second included angle (81.1° - 79.9°) / ((81.1° + 79.9°) / 2) is about 1.5%.

[0084] It can be seen from the above experimental comparison that the semiconductor processing method according to the embodiment of the present disclosure can improve the morphology of the metal pattern and obtain a more symmetrical metal morphology.

[0085] In the embodiment of the present disclosure, by making the carrier plate rotate in different rotation directions at different time periods in the evaporation process, the morphology of the formed metal pattern is improved. For example, when the settings of hardware devices such as evaporation equipment and process menus remain unchanged, the rotation direction of the carrier plate can be controlled and set through a computer program, so that the carrier plate can rotate in different directions according to the setting during the process. For example, at the beginning of the process, the carrier plate rotates forward (for example, rotates along the first rotation direction), and when the process reaches a certain time or after switching the metal source, the carrier plate rotates in reverse (for example, rotates along the second rotation direction), thereby forming a more symmetrical metal morphology on the left and right, or in some examples, the metal sidewall can have a straighter angle. In some embodiments, the forward and reverse rotations of the carrier plate are alternately performed, and the alternate frequency can be set and controlled through a computer program, and the alternate frequency can be designed and adjusted according to the material, thickness, etc. of the metal pattern. Through the above method, the evaporation process ability is improved, the morphology of the formed metal pattern is improved, and thus the device performance of the formed semiconductor device including the metal pattern can be improved.

[0086] The following points need to be explained:

[0087] (1)In the attached drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are involved, and other structures can refer to the general design; (2) Without conflict, the features in the same embodiment and different embodiments of the present disclosure can be combined with each other.

[0088] The above is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure can easily think of changes or substitutions, which should all be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A semiconductor processing method, characterized in that: include: providing a substrate; forming a patterned mask layer on the substrate, wherein the patterned mask layer has a mask opening to expose a portion of the surface of the substrate; Performing an evaporation process to form a metal material layer on the substrate and the patterned mask layer, the metal material layer comprising a metal pattern formed on the substrate exposed by the mask opening and a sacrificial metal portion formed on a side of the patterned mask layer away from the substrate, the metal pattern having a first side wall and a second side wall opposite to each other in a direction parallel to a main surface of the substrate, the first side wall having a first angle with the main surface of the substrate, and the second side wall having a second angle with the main surface of the substrate, wherein the first side wall and the second side wall of the metal pattern are respectively spaced apart from a side wall of the patterned mask layer defining the mask opening; as well as removing the patterned mask layer and the sacrificial metal portion, The evaporation process is performed in an evaporation time period, and in the evaporation process, the substrate formed with the patterned mask layer is placed on a carrier disk of an evaporation device, material vapor evaporates to the surface of the substrate, and the substrate rotates as the carrier disk rotates, wherein the evaporation time period includes a first time period and a second time period, the carrier disk rotates along a first rotation direction in the first time period, and rotates along a second rotation direction in the second time period, and the second rotation direction is opposite to the first rotation direction, so that the metal pattern has at least one of the following characteristics: The difference between the first angle and the second angle ranges from 0 to 2°; A ratio of a difference between the first angle and the second angle to an average value of the first angle and the second angle ranges from 0 to 2%.

2. The semiconductor processing method according to claim 1, characterized in that: The first rotation direction is one of a clockwise direction and a counterclockwise direction, and the second rotation direction is the other of a clockwise direction and a counterclockwise direction.

3. The semiconductor processing method according to claim 1, characterized in that: The evaporation time period includes one or more of the first time periods and one or more of the second time periods, and the first time periods and the second time periods are alternately arranged.

4. The semiconductor processing method according to claim 3, characterized in that: The number of the one or more first time periods is the same as the number of the one or more second time periods; and / or The total time length of the one or more first time periods is the same as the total time length of the one or more second time periods.

5. The semiconductor processing method according to any one of claims 1 to 4, characterized in that: The metal pattern is a single-layer structure having a target thickness, and the evaporation process includes a first sub-evaporation process and a second sub-evaporation process, The first sub-evaporation process deposits a metal material of a first thickness in the first time period, then changes the rotation direction of the carrier plate, and performs the second sub-evaporation process in the second time period to deposit a metal material of a second thickness; the first sub-evaporation process and the second sub-evaporation process are performed alternately, and the overall thickness of the metal material layer finally formed reaches the target thickness.

6. The semiconductor processing method according to claim 5, characterized in that: The first thickness and the second thickness are equal.

7. The semiconductor processing method according to claim 5, characterized in that: The first thickness and the second thickness are each equal to 1 / N of the target thickness, and N is an even number.

8. The semiconductor processing method according to any one of claims 1 to 4, characterized in that: The metal pattern is a multi-layer structure and includes multiple metal sub-layers. The evaporation process includes multiple metal evaporation processes that use multiple metal evaporation sources respectively, and the multiple metal sub-layers are formed by the multiple metal evaporation processes respectively. After switching the metal evaporation source, the evaporation process changes the rotation direction of the carrier plate.

9. The semiconductor processing method according to claim 8, characterized in that: The multiple metal sublayers include a first metal sublayer and a second metal sublayer, the material of the first metal sublayer is different from the material of the second metal sublayer, and the first metal sublayer is formed by a first metal evaporation process in the first time period, and the second metal sublayer is formed by a second metal evaporation process in the second time period.

10. The semiconductor processing method according to claim 1, characterized in that: In the first time period, the evaporation source used in the evaporation process has a first evaporation distance from the substrate, and metal deposition is performed on the substrate at a first evaporation angle; In the second time period, there is a second evaporation distance between the evaporation source used in the evaporation process and the substrate, and metal deposition is performed on the substrate at a second evaporation angle; The first evaporation distance is the same as the second evaporation distance, and / or the first evaporation angle is the same as the second evaporation angle.

11. A semiconductor device, characterized in that: The method is formed by the semiconductor processing method according to any one of claims 1 to 10, and comprises: the substrate; and The metal pattern is located on the substrate, wherein The metal pattern is a symmetrical pattern.

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