Thermal barrier between substrate processing chamber and substrate handling chamber

Abstract

A thermal barrier and / or gap between the interface surface portions of the two chambers reduces heat transfer between the chambers. An interface surface (e.g., of a gate valve) includes (i) a base surface; (ii) a raised ring surface extending outwardly beyond the base surface, wherein the raised ring surface extends around the gate valve access opening; (iii) a seal support surface extending around the raised ring surface; and (iv) at least one raised boss surface extending outwardly beyond the base surface. The interface surface defines a periphery having a total interface area. The raised ring surface and the raised boss surface define at least a portion of a total contact surface area of the interface surface, the portion being spaced outwardly from the base surface. The total contact surface area of the interface surface is less than 10% of the total interface area and / or less than 10% of the surface area of the substrate surface.

Description

Technical Field

[0001] The present disclosure generally relates to structures and methods for reducing heat transfer between two chambers, such as a substrate processing chamber and a substrate handling chamber in a cluster-type semiconductor vacuum processing tool. Some more specific aspects of the present technology relate to a gate valve interface surface connecting a gate valve to a substrate processing chamber, a gate valve including such a gate valve interface surface, and a substrate processing system having a substrate processing chamber connected to a substrate handling chamber by a gate valve using such a gate valve interface surface. Background Art

[0002] During the manufacture of semiconductor devices, such as integrated circuits and electronic devices, material layers are typically deposited onto a substrate. Material layer deposition is typically accomplished by supporting the substrate within a substrate processing chamber apparatus, heating the substrate to a desired deposition temperature, and flowing one or more material layer precursors through the chamber apparatus and across the substrate. As the precursors flow through the substrate, a material layer is gradually formed on the substrate surface, typically based on the temperature of the substrate and environmental conditions within the chamber apparatus.

[0003] In a cluster type semiconductor vacuum processing tool, multiple substrate processing chambers can be coupled to a single substrate handling chamber that moves substrates into and out of the substrate processing chambers, as well as into and out of the entire substrate processing system. Multiple substrate processing chambers are typically rigidly attached to the substrate handling chambers via gate valves. The gate valves sealingly couple the substrate processing chambers to the substrate handling chambers and provide windows through which substrates can be moved into and out of the substrate processing chambers. The connection between the gate valve and the substrate processing chambers typically includes two rigid metal plates that include O-ring seals and bolt features.

[0004] Conventional semiconductor production systems and methods are generally acceptable for their intended purposes, but there is room for improvement. For example, there are significant manufacturing costs and processing times involved in heating substrates for processing (e.g., layer deposition) and cooling substrates and / or equipment after and during processing. Therefore, a reduction in these costs and / or processing time frames would be a welcome advancement in the art. Summary of the invention

[0005] Various aspects of the present technology are directed to structures for reducing heat transfer between two chambers (e.g., between a substrate processing chamber and a gate valve, between a substrate processing chamber and a substrate handling chamber through a gate valve, etc.) In at least some examples of the technology, this can be achieved by providing a thermal barrier (or gap) between at least some portions of the interface surfaces connecting the chambers.

[0006] A gate valve interface surface according to at least some examples of the technology may include an interface surface having: (a) a substrate surface; (b) a first raised ring surface extending outwardly beyond the substrate surface, wherein the first raised ring surface extends around the gate valve inlet opening; (c) a first seal support surface extending around the first raised ring surface; (d) a first raised boss surface extending outwardly beyond the substrate surface; and (e) a second raised boss surface extending outwardly beyond the substrate surface. The interface surface defines an outer periphery, and the outer periphery defines a total interface area. The first raised ring surface, the first raised boss surface, and the second raised boss surface define at least a portion of an external component contact surface of the gate valve interface surface, wherein the external component contact surface is spaced outwardly from the substrate surface. The external component contact surface has a total contact surface area less than 10% of the total interface area and / or a total contact surface area less than 10% of the surface area of ​​the substrate surface.

[0007] In addition to or instead of one or more of the features described above, an example of a gate valve interface surface according to the present technology may include a second raised ring surface at the interface surface, the second raised ring surface extending around the first sealing support surface and defining an edge of the first sealing support surface, wherein the first sealing support surface extends between the first raised ring surface and the second raised ring surface.

[0008] In addition to or in lieu of one or more of the features described above, examples of gate valve interface surfaces according to the present technology may include a second seal support surface at the interface surface extending around a second raised ring surface.

[0009] In addition to or in lieu of one or more of the features described above, in some examples of gate valve interface surfaces according to the present technology, the substrate surface can define an edge of the second seal support surface.

[0010] In addition to or in lieu of one or more of the features described above, an example of a gate valve interface surface according to the present technology may include a peripheral edge, wherein the first raised boss surface and the second raised boss surface are located at or near the peripheral edge.

[0011] In addition to or instead of one or more of the features described above, in some examples of gate valve interface surfaces according to the present technology, at least one of the first raised boss surface or the second raised boss surface may define an opening or a recess configured to receive a connector for releasably connecting the interface surface to an external component.

[0012] In addition to or instead of one or more of the features described above, in some examples of gate valve interface surfaces according to the present technology, the external component contacting surface can define a first plane and the substrate surface can define a second plane spaced apart from the first plane.

[0013] Other aspects of the technology relate to gate valves. Such a gate valve may include: (a) a gate valve body defining a gate valve passage; (b) a valve member movable to open and close the gate valve passage; and (c) a first gate valve mounting surface disposed on a first side of the gate valve body. The first gate valve mounting surface may include an interface surface having: (i) a base surface, (ii) a first raised ring surface extending outwardly beyond the base surface, wherein the first raised ring surface extends around the gate valve passage, (iii) a first seal support surface extending around the first raised ring surface, (iv) a first raised boss surface extending outwardly beyond the base surface, and (v) a second raised boss surface extending outwardly beyond the base surface. The interface surface defines an outer periphery, and the outer periphery defines a total interface area. The first raised ring surface, the first raised boss surface, and the second raised boss surface define at least a portion of an external component contact surface of the interface surface, wherein the external component contact surface is spaced outwardly from the base surface. The external component contact surface has a total contact surface area less than 10% of the total interface area and / or a total contact surface area less than 10% of the surface area of ​​the base surface.

[0014] In addition to or instead of one or more of the features described above, examples of gate valves according to the present technology may include a second raised ring surface at the interface surface, the second raised ring surface extending around the first sealing support surface and defining an edge of the first sealing support surface, wherein the first sealing support surface extends between the first raised ring surface and the second raised ring surface.

[0015] In addition to or in lieu of one or more of the features described above, examples of gate valves according to the present technology may include a second seal support surface at the interface surface extending around the second raised ring surface.

[0016] In addition to or in lieu of one or more of the features described above, in some examples of gate valves according to the present technology, the substrate surface can define an edge of the second seal support surface.

[0017] In addition to or instead of one or more of the features described above, examples of gate valves according to the present technology may include a first seal in contact with a first sealing support surface and / or a second seal in contact with a second sealing support surface (e.g., when a second sealing support surface is present).

[0018] Other aspects of the technology relate to a substrate processing system comprising: (a) a first chamber having a first mounting surface; (b) a second chamber having a second mounting surface; and (c) a gate valve having a first gate valve interface surface engaged with the first mounting surface and a second gate valve interface surface engaged with the second mounting surface, the gate valve also comprising a gate valve opening extending from the first gate valve interface surface to the second gate valve interface surface to allow the substrate to move between the first chamber and the second chamber through the gate valve. The first gate valve interface comprises: (i) a substrate surface, (ii) a first raised ring surface extending outwardly beyond the substrate surface, wherein the first raised ring surface extends around the gate valve opening, (iii) a first sealing support surface extending around the first raised ring surface, (iv) a first raised boss surface extending outwardly beyond the substrate surface, and (v) a second raised boss surface extending outwardly beyond the substrate surface. The first gate valve interface surface defines an outer perimeter, and the outer perimeter defines a total interface area. The first raised ring surface, the first raised boss surface, and the second raised boss surface contact the first mounting surface and define at least a portion of an external component contact surface of a first gate valve interface surface, and the base surface is spaced apart from the first mounting surface. The external component contact surface has a total contact surface area less than 10% of the total interface area and / or a total contact surface area less than 10% of the surface area of ​​the base surface. The first seal is configured to contact the first seal support surface and sealingly engage the gate valve with the first chamber (e.g., the first seal extends between the first seal support surface and the first mounting surface to sealingly connect the gate valve with the first chamber).

[0019] In addition to or instead of one or more of the features described above, in some examples of substrate processing systems according to the present technology, the first gate valve interface surface may also include a second raised ring surface extending around the first sealing support surface and defining an edge of the first sealing support surface, wherein the first sealing support surface extends between the first raised ring surface and the second raised ring surface.

[0020] In addition to or as an alternative to one or more of the features described above, in some examples of substrate processing systems according to the present technology, the first gate valve interface surface may also include a second seal support surface extending around the second raised ring surface.

[0021] In addition to or as an alternative to one or more of the features described above, in some examples of substrate processing systems according to the present technology, the substrate surface can define an edge of the second seal support surface.

[0022] In addition to one or more of the features described above, or as an alternative, substrate processing systems according to some examples of the present technology may also include a second seal in contact with the second sealing support surface (e.g., sealingly engaging the gate valve and the first chamber (e.g., the second seal extends between the second sealing support surface and the first mounting surface to sealingly connect the gate valve and the first chamber)).

[0023] In addition to or in lieu of one or more of the features described above, in some examples of substrate processing systems according to the present technology, the second raised ring surface can be spaced apart from the first mounting surface.

[0024] In addition to or instead of one or more of the features described above, substrate processing systems according to some examples of the present technology may also include a robot in the second chamber, the robot having a portion extending through the gate valve opening to move the substrate into and out of the first chamber through the gate valve.

[0025] The present invention is provided to introduce some concepts related to the technology in a simplified form. These concepts are further described in detail in the detailed description of the examples of the following disclosure. The present invention is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than to limit the present invention.

[0027] Figure 1 is a schematic diagram of a substrate processing system including a cluster chamber arrangement according to aspects of the present disclosure;

[0028] FIG. 2A to FIG. 2F Various views of a gate valve, its constituent components, and its engagement with other components according to aspects of the present disclosure are provided; and

[0029] Figure 3 A substrate processing chamber and a substrate handling chamber coupled by a gate valve according to aspects of the present disclosure are schematically shown.

[0030] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0031] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure.

[0032] Figure 1A top view of a substrate processing system 100 according to some examples of the technology is schematically shown (e.g., a "cluster-type" semiconductor vacuum processing tool). The example substrate processing system 100 includes a five-sided substrate handling chamber 200 (although more or fewer sides may be provided in other examples of the technology). Four of these sides are connected to respective substrate processing chambers 300 via one or more gate valves 400. In this specifically shown example, each substrate processing chamber 300 is connected to the substrate handling chamber 200 via two gate valves 400, and each substrate processing chamber 300 is equipped to receive and process at least four substrates (note the substrate supports 302). However, in other examples of the technology, each substrate processing chamber 300 may be connected to the substrate handling chamber 200 via four gate valves 400 (e.g., Figure 1 More than two gate valves 400 spaced vertically below the gate valve 400 shown in the figure), and / or each substrate processing chamber 300 may be equipped to receive and process at least eight substrates (e.g., Figure 1 Four substrate supports 302 are shown spaced vertically below the substrate support 302. A single substrate processing chamber 300 may include more or fewer substrate supports 302 and / or more or fewer gate valve ports and / or interface surfaces.

[0033] The substrate handling chamber 200 includes a robot 210 for moving substrates into and out of various substrate processing chambers 300. In use, the gate valve 400 is opened and the end effector 210A of the robot 210 extends through the open gate valve 400 to insert a substrate into or remove a substrate from the interior chamber 300A of the substrate processing chamber (e.g., place a substrate on or remove a substrate from one of the substrate supports 302). Once the robot 210 is retracted from the substrate processing chamber 300, the gate valve 400 is closed, thereby sealing the substrate processing chamber 300 with the gate valve 400. Any desired further actions can then be performed in the substrate processing chamber 300 and / or the substrate handling chamber 200.

[0034] Figure 1 The substrate processing system 100 further includes a load lock module 500. The load lock module 500 is connected to the fifth side of the substrate handling chamber 200 through one or more gate valves 420 (which may have the same or different structures as the gate valves 400 connecting the substrate handling chamber 200 and the substrate processing chamber 300). Figure 1 Two gate valves 420 are shown, although any desired number may be provided. The load lock module 500 includes one or more substrate holding components 510 ( Figure 1The load lock module 500 (and the gate valve 420) holds the substrate in isolation from the environment of the substrate handling chamber 200 until the conditions (e.g., temperature, pressure, atmospheric content, etc.) within the substrate handling chamber 200 are ready for insertion of the substrate.

[0035] The load lock module 500 is further coupled to the equipment front end module 700 through one or more additional gate valves 600. The gate valves 600 may have the same or different structures as the gate valves 400 and / or 420 described above. The equipment front end module 700 of this example includes a robot 710. The end effector 710A of the robot 710 moves through the gate valve 600 (when open) to move substrates into the load lock module 500 (for layer deposition and other processing) and out of the load lock module 500 (after processing is completed). The robot 710 of the equipment front end module 700 also picks up new substrates for processing from one of the load ports 800A-800D and returns processed substrates to one of the load ports 800A-800D, for example, to be transferred to another location for further processing.

[0036] Therefore, in Figure 1 In a substrate processing system 100 (e.g., a cluster-type semiconductor vacuum processing tool), multiple substrate processing chambers 300 are coupled to a single substrate handling chamber 200, and the substrate handling chamber 200 moves substrates into and out of each substrate processing chamber 300, as well as into and out of the entire substrate processing system 100 (with the aid of a load lock module 500, an equipment front end module 700, and load ports 800A-800D). The multiple substrate processing chambers 300 are rigidly attached to the substrate handling chamber 200 via a gate valve 400. The gate valve 400 sealingly couples the substrate processing chamber 300 with the substrate handling chamber 200, and provides a selectively openable and closable (and sealed) window through which the substrate can be moved into and out of the substrate processing chamber 300.

[0037] As described above, the connection between a conventional gate valve and its associated substrate processing chamber typically includes two rigid metal plates, which include O-ring seals and bolt features. However, these conventional connections have some disadvantages. Typically, in order to perform the desired deposition, the substrate processing chamber (e.g., similar to chamber 300) can be at a relatively high temperature (e.g., 900°C or even higher). On the other hand, the substrate processing chamber (e.g., similar to chamber 200) does not need to be maintained at such a high temperature. In fact, in use, a typical substrate handling chamber 200 may be 200°C to 300°C lower than the substrate processing chamber 300 connected thereto. Therefore, the large mass of the substrate handling chamber 200 directly coupled to the substrate processing chamber 300 may cause thermal non-uniformity in the chamber due to heat transfer. More specifically, due to the need to further heat the substrate processing chamber 300, the undesirable heat loss from the substrate processing chamber 300 through its conventional interface with the gate valve will increase the manufacturing cost. In addition, the heat transferred to the substrate handling chamber 200 by the conventional gate valve can cause the chamber 200 (including the robot 210 of the substrate handling chamber 200 contained therein) to be used as a heat sink. Therefore, it may be necessary to circulate cooling water within the substrate handling chamber 200 (particularly in a manner that cools the robot arm 210 of the substrate handling chamber 200) to maintain the substrate handling chamber 200 and its equipment at a desired temperature level. This need for additional cooling increases equipment and manufacturing costs and may cause processing delays (because the entire substrate processing system 100 may need to wait for the substrate handling chamber 200 to reach the desired cooling temperature).

[0038] Aspects of the technology address at least some of these issues by providing structures for reducing heat transfer from the substrate processing chamber 300 to the substrate handling chamber 200 through the gate valve 400 connecting these chambers. In at least some examples of the technology, this is achieved by providing a thermal barrier (or gap) between at least some interface surface portions of the substrate processing chamber 300 and the gate valve 400 connected thereto.

[0039] Figures 2A to 3 Various views of a gate valve 400 are provided in accordance with some examples and aspects of the present technology. Figure 2A and 2B A perspective view and an exploded view of a gate valve 400 are provided; Figure 2C A gate valve interface surface 410A is shown for engaging a mounting surface of a substrate processing chamber 300; Figure 2D A gate valve interface surface 410B is shown for engaging a mounting surface of the substrate handling chamber 200; Figure 2E provides an enlarged view showing features of gate valve interface surface 410A; and Figure 2F A partial cross-sectional view of a gate valve 400 is provided. Figure 3 A side view of a gate valve 400 connecting the substrate processing chamber 300 and the substrate transport chamber 200 is schematically shown.

[0040] As shown in these figures, the example gate valve 400 includes: (a) a gate valve body 410; (b) a valve actuator 422 (also referred to as a "valve member", which is movable to open and close a gate valve passage (a gate valve inlet opening 414 through which the end effector 210A of the robot arm 210 carrying a substrate can pass); (c) a sealing plate 430; and (d) a sealing plate cover 440. The sealing plate 430 is assembled inside the gate valve body 410, engages with the valve actuator 422, and can be positioned so that its groove 430S is located in the gate valve inlet opening 414 during substrate transfer. The sealing plate cover 440 is connected to the gate valve body 410 (e.g., by bolts or other fasteners) to close the opening 450.

[0041] The gate valve body 410 of this example includes (i) a first gate valve interface surface 410A (also referred to herein as a "gate valve mounting surface") for engaging the gate valve mounting surface 310A (see FIG. 3 ) of the substrate processing chamber 300; Figure 3 (ii) a second gate valve interface surface 410B (also referred to herein as a "gate valve mounting surface") for engaging the gate valve mounting surface 200A of the substrate handling chamber 200 (see Figure 3 ); and (iii) a main body portion 410C located between (and connecting) the first gate valve interface surface 410A and the second gate valve interface surface 410B. The main body portion 410C includes an opening and a recess for Figure 2A The gate valve body 410 can be made of one or more component parts (e.g., the first gate valve interface surface 410A, the second gate valve interface surface 410B, and the body portion 410C can be separate components connected together (e.g., by welding, by fasteners, etc.) or any two or more of these parts can be formed as a single part). This type of gate valve body 410, including the gate valve interface surfaces 410A and 410B, can be made of aluminum, aluminum alloys, or other metallic materials.

[0042] The gate valve interface surface 410A according to some examples of the present technology will now be described in more detail. The gate valve interface surface 410A constitutes the surface at which the gate valve 400 interfaces with the substrate processing chamber 300 (see also Figure 3). The example gate valve interface surface 410A includes: (i) a base surface 412B (which forms at least 50% of the surface area of ​​the gate valve interface surface 410A, and in some examples, forms at least 75% of the surface area of ​​the gate valve interface surface 410A); (ii) a first raised ring surface 412R1 extending outwardly beyond the base surface 412B, wherein the first raised ring surface 412R1 extends around (and defines) the gate valve inlet opening 414; and (iii) a first seal support surface 412S1 extending around the first raised ring surface 412R1. The first seal support surface 412S1 receives a portion of the first seal 900A, such as Figure 3 As shown (O-ring). The first seal support surface 412S1 may be recessed compared to the base surface 412B, or coplanar with the base surface 412B.

[0043] The gate valve interface surface 410A of this example also includes one or more raised boss surfaces that extend outwardly beyond the base surface 412B. In this specifically illustrated example, the gate valve interface surface 410A includes a first set of raised boss surfaces 416A spaced apart along one edge of the gate valve interface surface 410A (e.g., spaced apart along and / or in a direction parallel to the elongated edge of the entry opening 414), and a second set of raised boss surfaces 416B spaced apart along an opposite edge of the gate valve interface surface 410A (e.g., spaced apart along and / or in a direction parallel to the elongated edge of the entry opening 414). The raised boss surfaces 416A and / or 416B may be integrally formed with the base surface 412B, such as by machining a starting surface (e.g., formed from aluminum or an aluminum alloy) to form the base surface 412B into a recessed surface (e.g., a planar surface) and leaving the desired raised boss surfaces 416A, 416B (which may also be planar and coplanar) extending outwardly from the base surface 412B.

[0044] Additionally or alternatively, if desired, one or more of the raised boss surfaces 416A and / or 416B may be formed of a different material, such as a lower thermal conductivity metal (such as stainless steel, a nickel alloy (such as may be found in or brands) etc.) to further reduce the net thermal conductivity of the raised boss surfaces 416A and / or 416B.

[0045] One or more of the raised boss surfaces 416A and / or 416B may include openings or recesses, e.g., to accommodate bolts or other connectors for releasably engaging the gate valve interface surface 410A (and thus the gate valve 400) with the gate valve mounting surface 310A of the substrate processing chamber 300 (or with another external component). In the specifically illustrated example: (i) each raised boss surface 416A (e.g., along one peripheral edge 410E of the gate valve interface surface 410A) is generally circular and has one through-hole opening extending therethrough, and (ii) each boss surface 416B (e.g., along another peripheral edge 410E of the gate valve interface surface 410A) is generally rectangular (shown with rounded corners) and has two through-hole openings extending therethrough. Additionally or alternatively, as shown in FIG. Figure 2A 4. As shown in FIG. 4, (i) the top peripheral edge 410E has six raised boss surfaces 416A (each with one through-hole opening), and (ii) the bottom peripheral edge 410E has four raised boss surfaces 416B (each with two through-hole openings). In other specific examples of the technology, other combinations of boss surface sizes, shapes, locations, and / or through-hole opening arrangements may be used. For example, in some arrangements, four bolt receiving openings and / or four raised boss surfaces 416A and / or 416B may be sufficient along the top and / or bottom peripheral edges 410E.

[0046] In the illustrated example, the peripheral edge 410E extends completely around the gate valve interface surface 410A. In at least some examples of the technology, one or more raised boss surfaces 416A and / or 416B will be located at or near the peripheral edge 410E. If at least some portions of the raised boss surfaces are located within 25 mm of the peripheral edge 410E, the raised boss surfaces 416A, 416B are considered to be located "close to" the peripheral edge 410E. In some examples, at least some portions of the raised boss surfaces 416A and / or 416B will be within 20 mm, within 16 mm, within 12 mm, within 8 mm, or even reach the peripheral edge 410E of the gate valve interface surface 410A. The peripheral edge 410E also encloses a "total interface area" S2, which will be discussed in more detail below.

[0047] like Figure 2C , 2E and Figure 3As further shown, in at least some examples of the technology, the gate valve interface surface 410A may also include a second raised ring surface 412R2 that extends around the first seal support surface 412S1 and defines an outer edge of the first seal support surface 412S1. Therefore, in the illustrated example, the first seal support surface 412S1 extends between the first raised ring surface 412R1 and the second raised ring surface 412R2. A second seal support surface 412S2 may be provided, for example extending around the second raised ring surface 412R2. In the illustrated example, the base surface 412B defines an outer edge of the second seal support surface 412S2. The second seal support surface 412S2 is recessed from the base surface 412B and the outer edges of the second raised ring surface 412R2 and extends between them. In some examples of the technology, the second seal support surface 412S2 will receive a portion of the second seal 900B, for example as Figure 3 As shown (O-ring). The second seal support surface 412S2 may be recessed compared to the base surface 412B.

[0048] Alternatively, in some examples of the technology, the second raised ring surface 412R2 and / or the second seal support surface 412S2 may be omitted. In such a configuration, the base surface 412B may extend to and define an outer edge of the first seal support surface 412S1.

[0049] Aspects of the technology relate to reducing the direct metal-to-metal contact surface area between the facing surfaces of the gate valve 400 and the substrate processing chamber 300. This reduction in direct metal-to-metal contact area will reduce heat transfer between the substrate processing chamber 300 and the substrate handling chamber 200 through the gate valve 400. Sufficient direct contact surface area is required to maintain a sealed connection between the substrate processing chamber 300 and the gate valve 400, but too much direct contact surface area will result in excessive heat being transferred from the substrate processing chamber 300 to the gate valve 400 (and then to the substrate handling chamber 200). Therefore, according to various aspects of the technology, the first raised ring surface 412R1 and the raised boss surfaces 416A and / or 416B will define at least a portion of the external component contact surface of the gate valve interface surface 410A. The term "external component contact surface" as used herein refers to a surface that directly contacts another component (e.g., direct metal-to-metal contact). The direct metal-to-metal contact surface between the gate valve interface surface 410A of the substrate processing chamber 300 and the gate valve mounting surface 310A is located at Figure 3 9 is highlighted by dashed circle 910. These external component contact surface locations are spaced outwardly from the base surface 412B of the gate valve interface surface 410A such that the base surface 412B will be spaced from the gate valve mounting surface 310A of the substrate processing chamber 300. Figure 3 This spacing distance is shown as dimension S (in Figure 34. The spacing dimension S may be at least 0.05 mm (and in some examples, at least 0.1 mm, or even at least 0.125 mm) and less than 10 mm (and in some examples, less than 8 mm, less than 6 mm, less than 4 mm, or even less than 3 mm). The spacing dimension S may be constant or vary across the surface area of ​​the base surface 412B of the gate valve interface surface 410A.

[0050] Although in Figure 2A-3 Although not shown in the example of FIG. 3 , in some examples of the technology, the second raised ring surface 412R2 may directly contact the gate valve mounting surface 310A of the substrate processing chamber 300. Figure 2A-3 In the specific example of FIG. 4 , the second raised ring surface 412R2 is spaced apart from the gate valve mounting surface 310A of the substrate processing chamber 300 (eg, a spacing dimension S or another distance).

[0051] As described above, only portions of the gate valve interface surface 410A directly contact the gate valve mounting surface 310A of the substrate processing chamber 300. These directly contacting portions (i.e., in the illustrated example, the first raised ring surface 412R1 and the raised boss surfaces 416A and / or 416B) may define and lie on a first plane P1 (see Figure 3 ). The base surface 412B of the gate valve interface surface 410A is recessed (by dimension S) from the first plane P1. In some examples, the base surface 412B may be located at a position adjacent to the first plane (see Figure 3 ) on a second plane P2 spaced, for example, by a dimension S. In this manner, at least 50% of the gate valve interface surface 410A (at least the base surface 412B) will be spaced from (and not in direct contact with) the gate valve mounting surface 310A of the substrate processing chamber 300. When present, the second raised ring surface 412R2 can be located on the second plane P2 (and therefore coplanar with the base surface 412B), or it can have a different spacing from the base surface 412B. In some examples of the technology, at least 80% of the surface of the gate valve interface surface 410A (excluding any through-holes, such as the gate valve access opening 414) will be located within 10 mm of a plane placed on the outermost surface of the gate valve interface surface 410A (e.g., within 10 mm of a plane placed on the outermost surface of the gate valve interface surface 410A). Figure 3 At least 85%, at least 90%, at least 95%, or even 100% of the surface of the gate valve interface surface 410A (excluding any through holes, such as the gate valve access opening 414) will be within 10 mm of the plane P1. Therefore, when the gate valve 400 is connected to the substrate processing chamber 300, the gate valve interface surface 410A is tightly coupled to the gate valve mounting surface 310A.

[0052] According to aspects of the present technology, the degree of direct contact (metal-to-metal contact) between the gate valve interface surface 410A and the gate valve mounting surface 310A will be kept low. The total contact surface area (direct metal-to-metal contact) between the gate valve interface surface 410A and the gate valve mounting surface 310A will be defined herein as the total contact surface area S1. In at least some examples of the present technology, the total contact surface area S1 between the gate valve interface surface 410A and the gate valve mounting surface 310A will be the combined surface area of: (a) the first raised ring surface 412R1 and (b) the raised boss surface 416A and / or 416B, which are in direct contact with the gate valve mounting surface 310A when the gate valve 400 is connected to the substrate processing chamber 300. In at least some examples of the technology, the entire direct metal-to-metal total contact surface area S1 between the facing surfaces of the gate valve 400 and the substrate processing chamber 300 (i.e., between the gate valve interface surface 410A and the gate valve mounting surface 310A) will be composed of (or substantially composed of) the following: (i) the first raised ring surface 412R1 and (ii) the raised boss surfaces 416A and / or 416B.

[0053] Furthermore, in at least some examples of the technology, the total contact surface area S1 will be less than 10% of the total surface area of ​​the base surface 412B. In such a configuration, the surface area of ​​the base surface 412B includes all surface areas of the gate valve interface surface 410A that do not directly contact the gate valve mounting surface 310A of the substrate processing chamber 300, except for the first seal support surface 412S1 and the second raised ring surface 412R2 and / or the second seal support surface 412S2 (if present). In some configurations, the total contact surface area S1 will be less than 8%, less than 6%, or even less than 5% of the total surface area of ​​the base surface 412B described above.

[0054] As mentioned above and Figure 2C As shown, the example gate valve interface surface 410A includes an outer peripheral edge 410E ( Figure 2C octagonal in the figure, but other desired shapes are possible). The peripheral edge 410E surrounds and defines an area S2 (also referred to herein as the "total interface area"). In some examples of the technology, the total contact (metal-to-metal contact) surface area S1 between the gate valve interface surface 410A and the gate valve mounting surface 310A will be less than 10% of S2 (and in some examples, the total contact surface area S1 will be less than 8%, less than 6%, or even less than 5% of S2). In other words, S1 and S2 may have any one or more of the following properties: S1<0.1×S2; S1<0.08×S2; S1<0.06×S2; and / or S1<0.05×S2.

[0055] Figures 2A to 3The gate valve body 410 of this example is further shown to include: (i) mounting flanges 418A (for mounting the gate valve interface surface 410A to the substrate processing chamber 300) and (ii) mounting flanges 418B (for mounting the gate valve interface 410B to the substrate handling chamber 200). Although these figures show mounting flanges 418A and 418B on the top and bottom regions of the gate valve body 410, other arrangements are possible (e.g., one or more mounting flanges are provided on the side surfaces of the gate valve interface surface 410A and / or the gate valve interface surface 410B). The mounting flanges 418A and 418B of this example include through-hole openings configured to receive bolts 418F or other fasteners for connecting the gate valve body 410 to the substrate processing chamber 300 and the substrate handling chamber 200. At least some of the through-hole openings for receiving bolts 418F or other fasteners can be oriented through the raised boss surfaces 416A and / or 416B (or other surfaces in direct metal-to-metal contact with another component). The recess 418R between the flange 418A and the flange 418B provides an access area for installation and removal of the gate valve 400, for example, to enable the bolts 418F to be accessed, attached and / or removed.

[0056] Figures 2A to 3 The structure shown includes a single surface of the gate valve (i.e., the gate valve interface surface 410A) having each of the base surface 412B, the first raised ring surface 412R1, the first seal support surface 412S1, the second raised ring surface 412R2 (if present), the second seal support surface 412S2 (if present), and the raised boss surfaces 416A and 416B. Other options are also possible. For example, one or more of the base surface 412B, the first raised ring surface 412R1, the first seal support surface 412S1, the second raised ring surface 412R2 (if present), the second seal support surface 412S2 (if present) and / or one or more of the raised boss surfaces 416A and 416B can be disposed on the gate valve mounting surface 310A of the substrate processing chamber 300, rather than being part of the gate valve 400 (and the gate valve body 410). In this manner, at least some features (and optionally all features) that provide reduced direct metal-to-metal contact surface area at the substrate processing chamber 300 and gate valve 400 interface may be included as part of the substrate processing chamber 300 .

[0057] Combined with the above Figures 2A to 3In the example of gate valve 400 discussed, structures for providing reduced direct metal-to-metal contact surface area between gate valve interface surface 410A and gate valve mounting surface 310A of substrate processing chamber 300 are described. Additionally or alternatively, if desired, at least some or all of the same types of structures for providing reduced direct metal-to-metal contact surface area can be provided between gate valve interface surface 410B of gate valve 400 and gate valve mounting surface 200A of substrate handling chamber 200. As a more specific example, in some examples of the technology, gate valve interface surface 410B can appear the same as gate valve interface surface 410A. As other examples, gate valve interface surface 410B can include one or more raised boss surfaces that appear the same as raised boss surfaces 416A and / or 416B.

[0058] However, Figure 2D A perspective view of this particular example gate valve interface surface 410B is provided. Figure 2D As shown, the gate valve inlet opening 414 of this example is enlarged on the substrate handling chamber 200 side compared to the substrate processing chamber 300 side (note that Figure 2D The stepped area 460 provides additional space to accommodate the robot arm 210 as it extends in and out of the gate valve access opening 414. Figures 2A to 3 In an example, the opening of the gate valve inlet opening 414 at the gate valve interface surface 410B can be at least 25% larger (in the surface area defined by the perimeter of the opening) than the opening of the gate valve inlet opening 414 at the gate valve interface surface 410A. In some examples, the opening of the gate valve inlet opening 414 at the gate valve interface surface 410B can be at least 30% larger (in the surface area defined by the perimeter of the opening), at least 35% larger, at least 40% larger, or even at least 50% larger than the opening of the gate valve inlet opening 414 at the gate valve interface surface 410A.

[0059] The gate valve interface surface 410B of this example includes a raised edge 462 surrounding the gate valve inlet opening 414. The raised edge 462 also includes an opening 462H defined therethrough, for example, for receiving a bolt 418F or other fastener, such as described above. The raised edge 462 can provide a flat planar surface that extends around a corresponding opening 200B disposed through the gate valve mounting surface 200A of the substrate handling chamber 200, and the raised edge 462 can directly contact the gate valve mounting surface 200A. If necessary, suitable seals (such as O-rings, gaskets, etc.) can be disposed around the gate valve inlet opening 414 and / or the opening 200B to maintain a sealed state between the gate valve 400 and the substrate handling chamber 200. Therefore, the raised edge 462 of this example reduces the direct metal-to-metal contact surface area between the gate valve interface surface 410B of the gate valve 400 and the gate valve mounting surface 200A of the substrate handling chamber 200. The direct metal-to-metal contact surface area between the gate valve interface surface 410B of the gate valve 400 and the gate valve mounting surface 200A of the substrate handling chamber 200 (the area of ​​the raised edge 462 in the example shown here) may be less than 35% of the area defined by the periphery of the gate valve interface surface 410B (similar to the peripheral edge 410E of the gate valve interface surface 410A), and in some examples, less than 30%, less than 25%, or even less than 20% of the area defined by the periphery of the gate valve interface surface 410B.

[0060] Figure 3 Schematically shows Figure 1 A portion of a substrate processing system 100 of the type shown is shown in which a gate valve mounting surface 310A of a first chamber (e.g., substrate processing chamber 300) engages a first gate valve interface surface 410A of a gate valve 400. The gate valve 400 engages its opposing second gate valve interface 410B with a gate valve mounting surface 200A of a second chamber (e.g., substrate handling chamber 200). The gate valve interface surfaces 410A and 410B may have any of the features described above.

[0061] like Figure 3 As further shown in the example substrate processing system 100, a first seal 900A (eg, an O-ring) is disposed on the first seal support surface 412S1 and between the first raised ring surface 412R1 and the second raised ring surface 412R2. In this manner, the gate valve 400 is connected to the substrate processing chamber 300 in a sealed manner.

[0062] However, in some examples of the technology, a second seal 900B (e.g., an O-ring) can be disposed on the second seal support surface 412S2 and between the second raised ring surface 412R2 and the base surface 412B of the first gate valve interface surface 410A. The second seal 900B (when present) can provide additional sealing security between the gate valve 400 and the substrate processing chamber 300. The second seal 900B can be particularly useful, for example, for substrate processing chambers 300 and / or substrate processing methods operating at very high temperatures, very high pressures, and / or very low (vacuum) pressures to help maintain a secure seal.

[0063] In the examples described above and shown in the accompanying drawings, the different spaces provide a gap or thermal barrier between at least 50% of the facing gate valve interface surface 410A and the gate valve mounting surface 310A (only a relatively small proportion of these facing surfaces are in direct metal-to-metal contact). If desired, a gasket or spacer material can be provided within at least some of the volume of this space. The gasket or spacer material (if present) should be made of a low thermal conductivity material to minimize heat transfer between the substrate processing chamber 300 and the substrate handling chamber 200 through the gate valve 400.

[0064] Reduced heat transfer from the substrate processing chamber 300 to the substrate handling chamber 200 through the gate valve 400 (e.g., provided by a thermal barrier or spacer S) can provide several potential advantages. The reduction in heat transfer across this interface can help the substrate processing chamber 300 retain heat, resulting in less heating costs and / or processing time. For example, if multiple or all gate valves 400 and substrate processing chamber 300 interfaces are configured to provide reduced direct metal-to-metal contact surface area and reduced heat transfer (as described above in conjunction with Figure 1 As discussed above, the cluster-type substrate processing system 100 may include at least 4 (and in some cases, up to 16) gate valves 400 / substrate processing chamber 300 interfaces), and this advantage may be multiplied.

[0065] Additionally or alternatively, reduced heat transfer can help keep the substrate handling chamber 200 cooler, resulting in less need for the robot 210 and / or other equipment in the substrate handling chamber 200 to act as a heat sink. This can reduce or eliminate the need to circulate water and provide water cooling for the robot 210 and / or the substrate handling chamber 200 (thereby reducing cost, complexity, etc.). In addition, reduced heat transfer from the substrate processing chamber 300 can also enable the use of less expensive seals on the gate valve 400 and / or the gate valve 420.

[0066] Although the present disclosure has been provided in the context of certain embodiments and examples, it will be understood by those skilled in the art that the present disclosure extends to other alternative embodiments and / or uses of embodiments beyond the specifically described embodiments and obvious modifications and equivalents thereof. In addition, although various variations of the embodiments of the present disclosure have been shown and described in detail, other modifications within the scope of the present disclosure will be apparent to those skilled in the art based on the present disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It should be understood that the various features and aspects of the disclosed embodiments may be combined or replaced with one another to form different modes of embodiments of the present disclosure. Therefore, the scope of the present disclosure should not be limited by the specific embodiments described above.

[0067] The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A gate valve interface surface, comprising: Interface surfaces, including: substrate surface; a first raised ring surface extending outwardly beyond the base surface, wherein the first raised ring surface extends around the gate valve access opening; a first seal support surface extending about the first raised ring surface; a first raised platform surface extending outwardly beyond the substrate surface; and a second raised platform surface extending outwardly beyond the substrate surface, wherein the interface surface defines an outer perimeter and the outer perimeter defines a total interface area, wherein the first raised ring surface, the first raised boss surface, and the second raised boss surface define at least a portion of an external component contact surface of the gate valve interface surface, wherein the external component contact surface is spaced outwardly from the substrate surface, and wherein the external component contact surface has a total contact surface area that is less than 10% of the total interface area.

2. The gate valve interface surface according to claim 1, wherein: The interface surface also includes a second raised ring surface extending around the first seal support surface and defining an edge of the first seal support surface, wherein the first seal support surface extends between the first and second raised ring surfaces.

3. The gate valve interface surface according to claim 2, wherein: The interface surface also includes a second seal support surface extending around the second raised ring surface.

4. The gate valve interface surface according to claim 3, wherein: The substrate surface defines an edge of the second seal support surface.

5. The gate valve interface surface according to claim 1, wherein: The interface surface includes a peripheral edge, and wherein the first and second raised boss surfaces are located at or near the peripheral edge.

6. The gate valve interface surface according to claim 1, wherein: At least one of the first raised boss surface or the second raised boss surface defines an opening or recess configured to receive a connector for releasably connecting the interface surface to an external component.

7. The gate valve interface surface according to claim 1, wherein: The exterior component contact surface defines a first plane, and the base surface defines a second plane spaced apart from the first plane.

8. A gate valve, comprising: a gate valve body defining a gate valve passage; a valve member movable to open and close the gate valve passage; as well as A first gate valve mounting surface is disposed on a first side of the gate valve body, wherein the first gate valve mounting surface comprises an interface surface having: substrate surface; a first raised ring surface extending outwardly beyond the base surface, wherein the first raised ring surface extends around the gate valve passage; a first seal support surface extending about the first raised ring surface; a first raised platform surface extending outwardly beyond the base surface; as well as a second raised platform surface extending outwardly beyond the base surface, wherein the interface surface defines an outer perimeter and the outer perimeter defines a total interface area, wherein the first raised ring surface, the first raised boss surface, and the second raised boss surface define at least a portion of an external component contact surface of the interface surface, wherein the external component contact surface is spaced outwardly from the substrate surface, and wherein the external component contact surface has a total contact surface area that is less than 10% of the total interface area.

9. The gate valve according to claim 8, wherein: The interface surface also includes a second raised ring surface extending around the first seal support surface and defining an edge of the first seal support surface, wherein the first seal support surface extends between the first and second raised ring surfaces.

10. The gate valve according to claim 9, wherein: The interface surface also includes a second seal support surface extending around the second raised ring surface.

11. The gate valve according to claim 10, wherein: The substrate surface defines an edge of the second seal support surface.

12. The gate valve of claim 10, further comprising a first seal in contact with the first seal support surface and a second seal in contact with the second seal support surface.

13. The gate valve of claim 8, further comprising a seal in contact with the first seal support surface.

14. A substrate processing system comprising: a first chamber having a first mounting surface; a second chamber having a second mounting surface; A gate valve having a first gate valve interface surface engaged with the first mounting surface and a second gate valve interface surface engaged with the second mounting surface, the gate valve further comprising a gate valve opening extending from the first gate valve interface surface to the second gate valve interface surface to allow a substrate to move between the first chamber and the second chamber through the gate valve, wherein the first gate valve interface surface comprises: substrate surface; a first raised ring surface extending outwardly beyond the base surface, wherein the first raised ring surface extends around the gate valve opening; a first seal support surface extending about the first raised ring surface; a first raised platform surface extending outwardly beyond the substrate surface; and a second raised platform surface extending outwardly beyond the base surface, wherein the first gate valve interface surface defines an outer perimeter, and the outer perimeter defines a total interface area, wherein the first raised ring surface, the first raised boss surface, and the second raised boss surface contact the first mounting surface and define at least a portion of an external component contact surface of the first gate valve interface surface, wherein the base surface is spaced apart from the first mounting surface, and wherein the external component contact surface has a total contact surface area that is less than 10% of the total interface area; and A first seal contacts the first seal support surface and seals the gate valve into sealing engagement with the first chamber.

15. The substrate processing system according to claim 14, wherein: The first gate valve interface surface also includes a second raised ring surface extending around and defining an edge of the first seal support surface, wherein the first seal support surface extends between the first raised ring surface and the second raised ring surface.

16. The substrate processing system according to claim 15, wherein: The first gate valve interface surface also includes a second seal support surface extending around the second raised ring surface.

17. The substrate processing system according to claim 16, wherein: The substrate surface defines an edge of the second seal support surface.

18. The substrate processing system of claim 16, further comprising a second seal in contact with the second seal support surface.

19. The substrate processing system according to claim 15, wherein: The second raised ring surface is spaced apart from the first mounting surface.

20. The substrate processing system according to claim 14, wherein: The second chamber includes a robot arm having a portion extending through the gate valve opening to move a substrate into and out of the first chamber through the gate valve.

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