Micro-electro-mechanical acceleration sensor

Abstract

The invention relates to a microelectromechanical acceleration sensor (1) having a substrate (2), a first sensor core (4) and a second sensor core (5). The sensor cores (4, 5) are arranged laterally next to one another on the upper side (3) of the substrate (2) and each have a vibration mass (6), a fixed electrode (7) and a movable electrode (8). A fixed electrode (7) is arranged on the upper side (3) of the substrate (2). The movable electrode (8) is fixedly connected to the vibration mass (6). The fixed electrode (7) and the movable electrode (8) are arranged perpendicular to the substrate (2) and extending parallel to one another, and the directly adjacent fixed electrode (7) and movable electrode (8) each form a capacitor (9). The vibration mass (6) is suspended above the substrate (2) by means of a spring element (10) and an anchor (11) in each case such that the vibration mass (6) can be deflected in a first direction parallel to the substrate (2) and perpendicular to the fixed electrode (7). The vibration masses (6) each have a different distance from the fixing element (22) in a deflection direction and on opposite sides of at least one fixing element (22). The first sensor core (4) and the second sensor core (5) are identically designed and the second sensor core (5) has an azimuth offset of 180 DEG with respect to the first sensor core (4).

Description

Technical Field

[0001] The invention relates to a micro-electromechanical acceleration sensor. Background Art

[0002] Micro-electromechanical inertial sensors for measuring acceleration and rotation rate are already manufactured and used in large quantities for various applications in the automotive and consumer sectors. For capacitive acceleration sensors with a (lateral) detection direction parallel to the substrate plane (xy plane or in-plane direction), a spring-mass system with long electrode fingers is preferably used. There are fixed and movable electrode fingers, which are arranged relative to each other and form plate capacitors respectively. Under the action of acceleration, the inertial force causes a deflection of the seismic mass and the movable electrode fingers fixedly connected to the seismic mass. A change in the electrode spacing between the fixed electrode and the movable electrode leads to a change in capacitance, which is a measure of the applied acceleration.

[0003] An important trend is the miniaturization of devices or components, which can subject such accelerometers to new loads or disturbance mechanisms. For example, temperature gradients can affect accelerometers. If an accelerometer in a sports device, such as a mobile phone, is located directly next to a heat source (e.g., CPU / GPU), not only does the sensor temperature change, but temperature differences (temperature gradients) are also formed in the accelerometer at least temporarily.

[0004] Because there are areas with different gas temperatures, the temperature gradient leads to radiation effects in the acceleration sensor. Hot gas particles have a higher kinetic energy, velocity and therefore momentum than cold gas particles, which transfer their momentum to the microelectromechanical structure (MEMS for short) during the collision. In this case, the hot gas particles transfer a higher momentum to the MEMS structure than the cold gas particles, whereby the entire force acts on the structure, whereby the movable electrode is deflected in the direction of the cold side. This leads to an offset error, which is linearly dependent on the temperature gradient. This signal error is also called TGO (temperature gradient offset).

[0005] The TGO effect is known for z-acceleration sensors, i.e. sensors with a detection direction perpendicular to the substrate plane. Such sensors can react particularly sensitively to temperature gradients. In practice, however, the TGO effect is also observed in transverse acceleration sensors. This effect does not occur if the acceleration sensor is located exactly in the rest position or zero position and there is no transverse temperature gradient. However, the TGO effect also occurs in transverse acceleration sensors as soon as the acceleration sensor has a deflection and / or the temperature gradient also has a transverse component parallel to the detection direction of the sensor.

[0006] It is not important here whether the deflection is caused by an external acceleration, for example by a tilt in the earth's gravitational field, or by a mechanical deflection (original deflection) which, due to the mechanical preload of the spring, also leads to a deflection without external acceleration. The dependence on the deflection can be qualitatively described as follows. When the seismic mass deflects, half of the electrode gap becomes smaller, while the other half of the electrode gap becomes larger. Since the hot gas particles collide with each other more frequently in the enlarged electrode gap before they hit the movable electrode fingers compared to the narrowed electrode gap, the particles have already lost a larger part of their directional momentum again. Therefore, in a narrow electrode gap, the net momentum transfer of the gas particles is greater.

[0007] If there is a transverse temperature gradient in the sensor, a TGO effect is generated in the case of a transverse sensor. This can also happen if a vertical temperature gradient acts on the housing from the outside. Due to the uneven distribution of different components and materials with different thermal conductivities in the housing, in addition to the dominant vertical component, the external vertical temperature gradient can also lead to local transverse temperature gradients. For example, the heat penetrating from the upper side of the housing is particularly well conducted through the adhesive frame of the MEMS chip. Therefore, the side of the acceleration sensor that is particularly close to the adhesive frame has a higher temperature than the side of the acceleration sensor that is further away from the adhesive frame, so that a transverse temperature gradient can be formed in the sensor despite the vertical temperature gradient acting on the outside. Just as the TGO effect is similarly generated by the vertical temperature gradient in the z-sensor, the TGO effect for the transverse acceleration sensor is also formed by the transverse temperature gradient.

[0008] The entire TGO effect of a lateral sensor thus results from two additive components, namely the dependency on the vertical temperature gradient in the case of pre-deflected electrode fingers and an additional dependency on the local lateral temperature gradient, which also leads to a TGO effect in the case of sensors without pre-deflection. In practice, these two effects overlap and mix. Which effect is dominant depends not only on the specific MEMS structure (number and size of electrode gaps, spring stiffness, mass, etc.), but also on the arrangement of the sensor core in the MEMS chip and the MEMS chip in the housing.

[0009] If the TGO effect is now measured for a number of components of the same type by applying a vertical temperature gradient on the outside of the housing, a certain distribution width of the TGO effect and, in particular, a linear relationship with the original offset results due to the statistical distribution of the original offset. However, in contrast to the original offset, the overall distribution of the TGO is not centered around zero, but rather is shifted, because of the superposition of the effects of the transverse temperature gradient, which is very similar for all components due to the defined geometric arrangement of the sensor core and the MEMS chip in the housing. The overall TGO distribution is therefore not centered around a mean value of zero. Therefore, if the maximum value of the overall TGO distribution is to be reduced, it is not sufficient to reduce the dependence on the pre-deflection, but the mean value of the distribution must also be known or shifted.

[0010] Design possibilities for optimizing the TGO for the transverse channels are known, wherein, although the TGO distribution is centered, its standard deviation is not reduced. Since design measures for reducing the standard deviation are unknown to date, there is only the possibility of correcting the TGO error signal in the ASIC. For this purpose, information about the existing temperature gradient is required on the part of the ASIC. However, the temperature differences on the surface of the ASIC are too small (μK-mK) to be measured with the aid of conventional temperature sensors. Summary of the invention

[0011] The object of the present invention is to provide an improved micro-electromechanical acceleration sensor. This object is achieved by the micro-electromechanical acceleration sensor according to the present invention. Advantageous further developments are given below.

[0012] The micro-electromechanical acceleration sensor has a substrate, a first sensor core and a second sensor core. The sensor cores are arranged side by side on the upper side of the substrate and respectively have a vibration mass, a fixed electrode and a movable electrode. The fixed electrode is arranged on the upper side of the substrate, and the movable electrode is fixedly connected to the vibration mass of each sensor core. The fixed electrode and the movable electrode are arranged perpendicular to the substrate and extend parallel to each other, and the directly adjacent fixed electrodes and movable electrodes of the sensor cores form capacitors respectively. The vibration mass is suspended on the upper side of the substrate by spring elements and anchoring parts arranged on the upper side of the substrate, so that the vibration mass can be deflected in a first direction parallel to the upper side of the substrate and perpendicular to the fixed electrode. The vibration mass of the sensor core has different distances from the fixed element in the deflection direction and on the opposite side of at least one fixed element of each sensor core. The first sensor core and the second sensor core are constructed identically, and the second sensor core has an azimuth offset of 180° relative to the first sensor core.

[0013] Microelectromechanical acceleration sensors (hereinafter also referred to as MEMS sensors) are based on the idea that the influence of the temperature gradient present in the MEMS sensor on the acceleration signal can be measured in an integrated MEMS-based manner. With the help of information about the influence of the temperature gradient on the acceleration signal, all offset and sensitivity errors of the MEMS sensor induced thereby can be corrected advantageously. Therefore, the arrangement of the MEMS sensor in the application is advantageously subject to few restrictions. For example, the MEMS sensor can be placed directly next to the heat source (CPU / GPU) and oriented at any angle to the heat source.

[0014] MEMS sensors are based on the simultaneous measurement of the effects of an acceleration and a temperature gradient with the same MEMS structure. In order to separate these two effects in the deflection direction of the seismic mass of the sensor core from one another, two identical electrode structures must be placed on the substrate, rotated by 180° relative to one another. This is achieved by a first and a second sensor core, which are identically designed but have an azimuthal offset of 180° relative to one another. Sensor cores of identical or similar design are sensor cores whose fixed and movable electrodes and, if applicable, damping electrodes are essentially identical with regard to geometrical properties, the dimensions of the sensor core elements and their arrangement, except for tolerances.

[0015] When an acceleration with a component parallel to the first direction acts on the MEMS sensor, a deflection of the seismic mass is caused. The TGO effect associated with the pre-deflection of the sensor is transmitted not only through the electrode spacing, but also on all other narrow gaps between the fixed element and the movable element of the MEMS sensor. Since the seismic mass of the sensor core has different distances from the fixed element on the opposite side of at least one fixed element of the micro-electromechanical acceleration sensor in the deflection direction, in addition to the acceleration signal, a radiated offset signal (TGO) associated with the temperature gradient is also generated. Due to this targeted arrangement, the radiation force on the side where the seismic mass has a smaller distance from the at least one fixed element is significantly greater than the force on the side with a larger distance. As a result, the temperature gradient causes a deflection of the seismic mass fixedly connected to the movable electrode and thus causes a capacitive signal. Conversely, an azimuth offset of 180° between similarly constructed sensor cores causes the radiation effect in the sensor core to act in the opposite direction.

[0016] For example, the acceleration can be measured by adding the capacitance signal of the first sensor core to the capacitance signal of the second sensor core. Since the accelerations of the seismic masses of the first and second sensor cores are deflected in the same direction, but the radiation effects act in opposite directions, the contribution of the sensor cores is cancelled out by the temperature gradient. In this way, a corrected acceleration signal with compensated TGO can be obtained (acceleration sensing mode). Conversely, TGO can also be obtained by subtracting the capacitance signal of the second sensor core from the capacitance signal of the first sensor core, since in this case the contribution is compensated by the acceleration. For example, the capacitance signal can be subtracted by connecting the capacitances of the first sensor core and the second sensor core inversely (temperature gradient sensing mode).

[0017] As already explained, the TGO effect is transmitted not only through the electrode spacing, but also at all other gaps where the fixed and movable elements of the micro-electromechanical sensor are opposite. The vibrating mass of the sensor core has different distances from the fixed element on the side opposite to at least one fixed element of the micro-electromechanical acceleration sensor in the deflection direction, which can be realized in different ways. However, it is particularly important in this context that the damping electrode used to increase the damping of the MEMS structure has no electrical function. The damping electrode has a geometry that is basically similar to the remaining electrodes. For optimal spatial utilization of the sensor core surface, damping electrodes should be used as little as possible, because they do not contribute to the electrical utilization signal and only provide a very small contribution to the vibrating mass of the sensor core. This means that the damping force per damping electrode can be selected to be as large as possible for good performance of the MEMS sensor.

[0018] In one embodiment, the sensor cores each have a fixed damping electrode, and the seismic mass of the sensor core has a movable damping electrode. The fixed damping electrode is arranged on the upper side of the substrate and forms a fixed element of the sensor core. The fixed damping electrode and the movable damping electrode are arranged parallel to the fixed electrode and the movable electrode. The fixed damping electrode and the movable damping electrode are arranged alternately along the deflection direction of the seismic mass, and the distance between one damping electrode of the sensor core and two directly adjacent damping electrodes is of different sizes.

[0019] In this embodiment, the microelectromechanical acceleration sensor thus has a plurality of fixed elements, i.e. fixed damping electrodes. The seismic mass has a movable damping electrode. Since the fixed and movable damping electrodes are arranged alternately in the deflection direction of the seismic mass and the distances of one damping electrode of the sensor core to two directly adjacent damping electrodes are of different sizes, the seismic mass has different distances from the fixed element in the deflection direction and on opposite sides of the fixed element. Advantageously, the radiation effect is transmitted by the different distances between the fixed damping electrodes, whereby the influence of the temperature gradient on the MEMS sensor can be particularly pronounced. As a result, the influence of the temperature gradient can be measured and taken into account particularly reliably.

[0020] In one embodiment, the fixed damping electrode and the movable damping electrode each have a thickness measured in the deflection direction of the seismic mass. The thickness of the fixed damping electrode and / or the movable damping electrode is adjusted in the extension direction of the fixed damping electrode and / or the movable damping electrode. Advantageously, the thickness of the fixed damping electrode and / or the movable damping electrode can be adjusted so that the distances of a damping electrode of the sensor core to two directly adjacent damping electrodes are not of different sizes, but such distances are adjusted in the extension direction of the damping electrodes. The radiation effect can thereby be advantageously enhanced.

[0021] The seismic masses of the sensor cores are at different distances from the fixing element in the deflection direction and on mutually opposite sides of at least one fixing element of the respective sensor core, and the arrangement of the damping electrodes can alternatively or additionally be achieved in one embodiment in that each sensor core is laterally surrounded by a frame and the distances between the seismic masses formed in the deflection direction and on mutually opposite sides of the frame and the frame are of different sizes in the rest position of the seismic masses. In this case, the frame thus constitutes an alternative or additional fixing element of the microelectromechanical acceleration sensor.

[0022] In one embodiment, also alternatively or additionally to an asymmetrical arrangement of the damping electrode and / or the seismic mass with respect to the frame, the sensor core can each have at least one stop arranged on the upper side of the substrate, wherein the distances between the seismic mass and the stop formed in the deflection direction and on mutually opposite sides of the stop of the sensor core are respectively of different sizes in the rest position of the seismic mass. In this case, the fixing element is alternatively or additionally formed by the stop.

[0023] In one embodiment, the microelectromechanical acceleration sensor has a third sensor core and a fourth sensor core, which are arranged laterally next to one another and next to the first sensor core and the second sensor core on the top side of the substrate.

[0024] The seismic mass is suspended above the substrate by means of a spring element, so that the seismic mass can be deflected in a second direction parallel to the substrate and perpendicular to the first direction. The sensor cores are designed identically and the third sensor core has an azimuthal offset of 90° to the first sensor core and the fourth sensor core has an azimuthal offset of 90° to the second sensor core. As a result, the seismic masses of the third sensor core and the fourth sensor core can be deflected in a second direction parallel to the substrate and perpendicular to the first direction. The third sensor core and the fourth sensor core thus have an azimuthal offset of 180° relative to one another. Advantageously, the influence of the temperature gradient can thus be measured and taken into account not only in the first direction but also in the second direction, i.e. in the substrate plane.

[0025] In one embodiment, a separate seismic mass or a common seismic mass is provided for all sensor cores. If a common seismic mass is provided for all sensor cores, the microelectromechanical acceleration sensor has only one movable mass, which is formed by the seismic masses of the sensor cores. In other words, in this case, the first seismic mass of the sensor core and the second seismic mass of the second sensor core and optionally the seismic masses of the third and fourth sensor core are fixedly connected to one another or form an integral mass. Advantageously, the sensor cores can thus be combined with one another, thereby reducing the number of sensor cores that are designed completely independently.

[0026] In one embodiment, the microelectromechanical acceleration sensor has a rocker suspended above the upper side of the substrate, the rocker having a symmetrical mass distribution about the rotation axis of the rocker extending parallel to the substrate. The rocker has a first through hole and a second through hole. The first through hole and the second through hole are arranged on opposite sides of the rotation axis. The first through hole and the second through hole each have a through hole having different geometric shapes and / or aspect ratios.

[0027] Advantageously, the rocker can also measure and take into account radiation effects in a direction extending perpendicularly to the substrate. This can be achieved by perforations of different configurations, which, in the presence of a temperature gradient, cause a rotation of the rocker about the axis of rotation. The perforations are selected in such a way that they have a symmetrical mass distribution with respect to the axis of rotation, but produce different radiation forces in a direction perpendicular to the substrate. This can be achieved, for example, by a circular through-hole in the first perforation and a rectangular through-hole with a high aspect ratio in the second perforation. However, due to the symmetrical mass distribution of the rocker, accelerations perpendicular to the substrate do not cause a deflection of the rocker. As a result, the influence of the temperature gradient can also be measured without being separated from the acceleration signal.

[0028] In one embodiment, a common seismic mass is provided for the sensor cores, and the rocker is formed by the common seismic mass. The first sensor core and the second sensor core are arranged on opposite sides of the axis of rotation. Advantageously, the influence of temperature gradients can thereby be measured and taken into account both in the lateral direction and in the vertical direction.

[0029] In one embodiment, the micro-electromechanical acceleration sensor has a main core arranged on the upper side of the substrate, the main core having a micro-electromechanical structure for measuring acceleration in a direction parallel and / or perpendicular to the substrate. In this case, the sensor core can also be called a test core. The test core can only be set up to measure the TGO effect in order to be able to correct the acceleration signal of the main core. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] A microelectromechanical acceleration sensor (MEMS sensor) is explained in detail below in conjunction with the schematic drawings. The drawings show:

[0031] Figure 1 : A top view of the MEMS sensor according to the first embodiment;

[0032] Figure 2 : Top view of the damping electrode of the MEMS sensor according to different embodiments;

[0033] Figure 3 : A top view of another arrangement of the damping electrode;

[0034] Figure 4 : A top view of a MEMS sensor according to a second embodiment;

[0035] Figure 5 : A top view of a MEMS sensor according to a third embodiment;

[0036] Figure 6 : A top view of a MEMS sensor according to a fourth embodiment;

[0037] Figure 7 : A top view of a MEMS sensor according to a fifth, sixth and seventh embodiment;

[0038] Figure 8 : A top view of a MEMS sensor according to an eighth embodiment;

[0039] Fig. 9 : A sensor core for compensating for the effects of temperature gradients in the vertical direction; and

[0040] Fig.10 : A sensor core for combined compensation of temperature gradient effects in lateral and longitudinal directions. DETAILED DESCRIPTION

[0041] Figure 1 A schematic top view of a microelectromechanical acceleration sensor 1 according to a first embodiment is shown. The MEMS sensor 1 has a substrate 2, which has an upper side 3 and a lower side opposite the upper side 3. The substrate 2 comprises silicon, for example, but can also comprise other materials as an alternative or in addition. A first sensor core 4 and a second sensor core 5 are arranged laterally next to each other on the upper side 3 of the substrate 2. The first sensor core 4 and the second sensor core 5 are designed identically and have an azimuth offset of 180° relative to each other. The sensor cores 4 and 5 essentially comprise silicon, but can also comprise silicon dioxide, for example. The sensor cores 4, 5 can also comprise other materials.

[0042] Sensor cores 4, 5 each have a seismic mass 6, a fixed electrode 7 and a movable electrode 8. Fixed electrode 7 is arranged or anchored on top side 3 of substrate 2. In contrast, movable electrode 8 is fixedly connected to seismic mass 6 of the respective sensor core 4, 5. Electrodes 7, 8 of sensor cores 4, 5 are arranged perpendicular to substrate 2 and parallel to one another. Directly adjacent fixed and movable electrodes 7, 8 each form a capacitor 9.

[0043] The seismic mass 6 is suspended on the upper side 3 of the substrate 2 by means of spring elements 10 and anchoring portions 11 arranged on the upper side 3 of the substrate 2, respectively, so that the seismic mass 6 can be deflected in a first direction parallel to the upper side 3 of the substrate 2 and perpendicular to the fixed electrode 7. Therefore, the seismic mass 6 is arranged on the substrate 2. The first direction is also referred to as the x-direction below. When an acceleration force acts on the MEMS sensor 1, the seismic mass 6 deflects due to its inertia. Due to the deflection of the seismic mass 6, the movable electrode 8 fixedly connected to the seismic mass 6 is deflected in the x-direction, i.e. perpendicular to the fixed electrode 7. As a result, the distance between the adjacent fixed electrode 7 and the movable electrode 8 of the capacitor 9 is changed, so that the acceleration can be measured in a capacitive manner.

[0044] exist Figure 1 In an exemplary embodiment of a MEMS sensor 1 of FIG. 1 , the seismic mass 6 has a web 12 and a frame 23, wherein the web 12 is connected to the anchoring portion 11 of the respective sensor core 4 , 5 and extends in the x-direction. The webs 12 are connected to spring elements 10 on opposite sides in the extension direction or the x-direction. Thus, each web 12 is connected to two spring elements 10. The spring elements 10 are in turn connected to the frame 23 of the seismic mass 6. The spring elements 10 are designed as torsion spring elements and extend perpendicularly to the webs 12 of the respective sensor core 4 , 5. The spring elements 10 are fixedly connected to the frame 23 of the seismic mass 6, for example, only in the region of the webs 12.

[0045] Frame 23 of seismic mass 6 laterally surrounds anchor 11, web 12 connected to anchor 11, two spring elements 10 connected to web 12, and fixed and movable electrodes 7, 8. In other words, seismic mass 6 has a slot 13. The laterally surrounding elements are arranged in slots 13 of sensor core 4, 5, respectively.

[0046] In the deflection direction of the seismic mass 6, i.e. in the x-direction, two mutually opposite stops 14 are arranged on the upper side 3 of the substrate 2. The stops 14 are not arranged in the notches 13, but are arranged in each case in further notches 15 of the seismic mass 6. As a result, the seismic mass 6 can only be deflected to such an extent that it comes to rest on at least one stop 14. However, the stops 14 can also be omitted. For example, the seismic mass 6 has a through hole 16, whereby the seismic mass 6 has a smaller mass than a seismic mass 6 without a through hole 16. However, this is not absolutely necessary. If a larger mass is suitable for the purpose, for example in order to influence the sensitivity of the sensor core, the through hole 16 can also be omitted.

[0047] The fixed electrode 7 and the movable electrode 8 extend in a second direction extending perpendicularly to the first direction, which is also referred to as the y-direction. The fixed electrode 7 and the movable electrode 8 are arranged in the y-direction and on opposite sides of the tab 12. The movable electrodes 8 are connected to the respective seismic masses 6, for example, on sections of the frame 23 extending parallel to the tab 12. However, the movable electrode 8 may also be fixedly connected to the tab 12 instead.

[0048] Each sensor core 4 , 5 has four electrical conductor tracks 18 , 19 which are arranged on top side 3 of substrate 2 and extend in the x-direction.

[0049] The two conductor tracks 18, 19 are arranged in the y direction on opposite webs 12. The conductor tracks 19 facing the webs 12 are referred to as inner conductor tracks 18. The conductor tracks 19 facing away from the webs 12 are referred to as outer conductor tracks 19.

[0050] Furthermore, sensor cores 4, 5 each have a group 17 of two fixed electrodes 7 and one movable electrode 8 arranged one behind the other in the x direction. For example, each sensor core 4, 5 has fourteen groups 17, of which seven groups 17 are arranged in the y direction on opposite sides of web 12. Each movable electrode 8 in a group 17 is arranged between two fixed electrodes 7. In the rest position of seismic mass 6, the movable electrode is arranged in the middle of a fixed electrode 7 of a group 17 of electrodes 7, 8.

[0051] The inner conductor tracks 18 and the outer conductor tracks 19 are respectively electrically and mechanically connected to the fixed electrodes 7 of a group 17, which are arranged on the sides of the movable electrode 8 facing away from each other. Therefore, each group 17 has one fixed electrode 7 connected to the inner conductor tracks 18 and one fixed electrode 7 connected to the outer conductor tracks 19. The movable electrode 8 can be electrically contacted via the seismic mass 6 or the anchoring part 11 and form a capacitor 9 with the fixed electrode 7 in each group 17. A first capacitor 24 is formed here with respect to the outer conductor tracks 19 and the movable electrode 8. A second capacitor 25 is formed with respect to the inner conductor tracks 18.

[0052] In addition to the fixed electrode 7 and the movable electrode 8, the sensor cores 4, 5 of the MEMS sensor 1 according to the first embodiment each have a fixed damping electrode 20, and the seismic mass 6 of the sensor cores 4, 5 has a movable damping electrode 21. The fixed damping electrode 20 is arranged on the upper side 3 of the substrate 2. The fixed damping electrode 20 and the movable damping electrode 21 are arranged parallel to the fixed electrode 7 and the movable electrode 8. The fixed damping electrode 20 forms a fixed element 22 of the MEMS sensor 1. Alternative fixed elements 22 are explained in conjunction with other embodiments of the MEMS sensor. Like the movable electrode 8, the movable damping electrode 21 is connected to a section of the frame 23 of the seismic mass 6 extending parallel to the web 12. However, the movable damping electrode 21 can also be connected to the web 12 of the seismic mass 6.

[0053] The fixed and movable damping electrodes 20, 21 are arranged alternately in the deflection direction of the seismic mass 6, i.e., in the x-direction. The distances between the damping electrodes 20, 21 and the two directly adjacent damping electrodes 20, 21 of the sensor cores 4, 5 are of different sizes. Different radiation effects are caused between the damping electrodes 20, 21 by the different distances, whereby the temperature gradient has a significant influence on the measurement signal. This can be used to quantify the influence of the temperature gradient. Due to the different distances between the two directly adjacent damping electrodes 20, 21, the arrangement of the damping electrodes 20, 21 can be called asymmetric. The damping electrodes 20, 21 are not arranged to form a capacitor. However, the role of the damping electrode is to be able to reliably measure the influence of the temperature gradient, because due to the asymmetry of the arrangement of the damping electrodes 20, 21, the radiation force is particularly obvious. Therefore, the damping electrodes 20, 21 are not in electrical contact or at least the fixed damping electrode 20 is not in electrical contact.

[0054] The MEMS sensor 1 according to the first embodiment can be used to measure acceleration by adding the capacitance signal of the first sensor core 4 to the capacitance signal of the second sensor core 4 (acceleration measurement mode). The capacitance signal of the sensor cores 4, 5 is formed here by the difference between the first capacitor 24 and the second capacitor 25. In the case of an acceleration with a component parallel to the x-direction, the seismic masses 6 of the first and second sensor cores 4, 5 are deflected in the same direction. This Figure 1 This is indicated by two arrows pointing in the same direction, which are shown on the left side for each sensor core 4 , 5 .

[0055] In the first sensor core 4, the radiation effect acts in the same direction as the acceleration force in the x-direction, since directly adjacent fixed and movable damping electrodes 20, 21 have different distances, so that the movable damping electrode 21 arranged between the two fixed damping electrodes 20 is deflected in the direction of the acting acceleration force. In general, the movable damping electrode 21 is deflected in the direction of the greater distance, since a higher average momentum is transferred to the movable damping electrode 21 between the damping electrodes 20 and 21 having the smaller distance. This movement of the movable damping electrode 21 is transferred to the seismic mass 6 of the sensor cores 4, 5, which is thereby subjected to a deflection in the x-direction. Since the second sensor core 5 has an azimuth offset of 180° from the first sensor core 4, the radiation force in the second sensor core 5 acts in the opposite direction to the acceleration force or to the radiation momentum transfer acting in the first sensor core 4, unlike the first sensor core 4. This is particularly evident in the fact that the second sensor core 5 has an azimuth offset of 180° from the first sensor core 4. Figure 1 This is indicated by means of two arrows arranged on the right side for sensor cores 4 , 5 , respectively.

[0056] Since the radiation effect acts in opposite directions, in the acceleration measurement mode, the contribution of the sensor cores 4, 5 is cancelled out by the temperature gradient. In this way, a corrected acceleration signal with a compensated TGO can be obtained. In the TGO mode, on the other hand, the capacitance signals of the sensor cores 4, 5 are subtracted from each other, while the acceleration signals cancel each other, thereby obtaining an acceleration-corrected TGO signal.

[0057] Figure 2 Two different variants of damping electrodes 20 , 21 are schematically shown in a top view. Figure 2 a schematically shows Figure 1 Damping electrodes 20 , 21 of the MEMS sensor 1 in FIG. Figure 2 b schematically shows another embodiment of a damping electrode 20, 21. For the sake of simplicity, other elements of the MEMS sensor 1 are correspondingly not shown. The reference numerals used hitherto are retained below.

[0058] exist Figure 2 In, with Figure 1In contrast, fixed damping electrode 20 is fixedly connected to an anchoring portion arranged on top 3 of substrate 2. However, fixed damping electrode 20 does not have to be connected to the anchoring portion, but can also be fixedly connected directly to substrate 2. Frame 23 of seismic mass 6 connected to movable damping electrode 21 is only partially shown.

[0059] Fixed damping electrode 20 and movable damping electrode 21 each have a thickness measured in the deflection direction of seismic mass 6 . Figure 2 a, the thickness of all damping electrodes 20, 21 is designed to be uniform. Figure 2 In the embodiment of b, the thickness of the movable damping electrode 21 is adjusted in the extension direction of the movable damping electrode 21. For example, the movable damping electrode 21 has thinner and thicker sections, each of which has a constant thickness with respect to the x direction, whereby the radiation effect can be additionally enhanced. Figure 2 The adjustment of the thickness of the movable damping electrode 21 shown in a can also be configured differently from that shown. For example, it is possible that the movable damping electrode 21 has more than two different thicknesses. Alternatively or additionally, the thickness of the fixed damping electrode 20 can also be adjusted.

[0060] Figure 3 Another arrangement of damping electrodes is schematically shown in a top view. In this case, the thickness of the fixed and movable damping electrodes 20, 21 is adjusted differently, for example. However, the thickness of the fixed and / or movable damping electrodes 20, 21 can also be adjusted, for example, corresponding to Figure 2 a. The reference numerals used to date are retained

[0061] exist Figure 3 In the arrangement of damping electrodes 20, 21, the fixed damping electrode 20 is fixedly connected to the static edge region 27 via a connecting element 26. In this case, the movable damping finger 21 is a component of the movable core surface 28. The connecting element 26 at least partially extends into the groove of the movable core surface 28, and the fixed and movable damping electrodes 20, 21 are embedded in each other. Their arrangement is designed asymmetrically so that the radiation effect can be used to measure the influence of the temperature gradient.

[0062] In the microelectromechanical acceleration sensor 1 according to the first embodiment, the fixing element 22 is formed by a fixed damping electrode 20. Further embodiments are described below in which the fixing element 22 is formed alternatively or additionally by other static elements. However, all embodiments have in common that the seismic masses 6 of the sensor cores 4 , 5 are at different distances from the fixing element 22 in the deflection direction and on the opposite side of the at least one fixing element 22 of the microelectromechanical acceleration sensor 1 .

[0063] Figure 4 A MEMS sensor 29 according to a second embodiment is schematically shown in a top view. The MEMS sensor 29 according to the second embodiment has similarities to the MEMS sensor 1 according to the first embodiment. Only the differences are explained below. Similar or identical elements are provided with the same reference numerals.

[0064] Compared to the MEMS sensor 1 according to the first embodiment, the MEMS sensor 29 according to the second embodiment has a frame 30 for each sensor core 4, 5, which is arranged on the upper side 3 of the substrate 2 and laterally surrounds the respective sensor core 4, 5. The distances between the seismic mass 6 formed in the deflection direction and on opposite sides of the frame 30 and the frame 30 are of different sizes in the static position of the seismic mass 6, which can be understood as asymmetry. This causes that, in addition to the radiation effects caused by the asymmetric damping electrodes 20, 21, further radiation effects also occur. In this case, the fixing element 22 of the sensor core 4, 5 is formed by the fixed damping electrode 20. The asymmetric damping electrodes 20, 21 are, for example, arranged according to Figure 1 However, it can also be constructed according to Figure 2 or 3 constructs or even cancel them altogether.

[0065] Figure 5 A section of a MEMS sensor 31 according to a third embodiment is schematically shown in a top view. The MEMS sensor 31 according to the third embodiment has similarities to the MEMS sensor 1 according to the first embodiment. Only the differences are explained below. Similar or identical elements are provided with the same reference numerals.

[0066] Compared to MEMS sensor 1 according to the first embodiment, sensor cores 4, 5 in MEMS sensor 31 according to the third embodiment each have at least one stop 14 arranged on top side 3 of substrate 2, wherein the distances between seismic mass 6 formed in the deflection direction and on opposite sides of stop 14 of sensor cores 4, 5 and stop 14 are of different sizes in the static position of seismic mass 6. This can also be understood as an asymmetry that makes it possible to use radiation effects, for example, to obtain TGO-corrected acceleration signals. In this case, stop 14 therefore forms fixing element 22 for sensor cores 4, 5.

[0067] Reference Figure 1, each sensor core 4 , 5 has two stops 14. Stops 14 are arranged on opposite sides of web 12 with respect to the x-direction. The two stops 14 can be arranged in such a way that the distances between seismic mass 6 formed in the deflection direction and on opposite sides of stop 14 of sensor core 4 , 5 and stop 14 are of different sizes in the static position of seismic mass 6. However, this is sufficient for only one stop 14 to cause a significant radiation effect. In this case, asymmetrical damping electrodes 20 , 21 can also be arranged according to Figures 1 to 3 In addition, the sensor cores 4 and 5 can be provided according to Figure 4 The different distances between the seismic mass 6 and the stop 14 in the rest position of the seismic mass 6 formed in the deflection direction and on the opposite side of the stop 14 are Figure 5 Indicated by arrows.

[0068] Figure 6 A MEMS sensor 32 according to a fourth embodiment is schematically shown in a top view. The MEMS sensor 32 according to the fourth embodiment has similarities to the MEMS sensor 1 according to the first embodiment. Only the differences are explained below. Figures 1 to 3 The asymmetric arrangement of the damping fingers 20, 21 and / or according to Figure 4 The asymmetrical arrangement of seismic mass 6 relative to frame 30 and / or the asymmetrical arrangement of seismic mass 6 relative to stop 14 are described. Similar or identical elements are provided with the same reference numerals.

[0069] According to a fourth embodiment, the MEMS sensor 32 has a third sensor core 33 and a fourth sensor core 34. The third sensor core 33 and the fourth sensor core 34 are arranged laterally next to each other and are arranged on the upper side 3 of the substrate 2 next to the first sensor core 4 and the second sensor core 5. The sensor cores 4, 5, 33, 34 are identically constructed. The third sensor core 33 has an azimuth offset of 90° relative to the first sensor core 4. The fourth sensor core 34 has an azimuth offset of 90° relative to the second sensor core 5. As a result, the seismic mass 6 of the third sensor core 33 and the fourth sensor core 34 can be deflected in the y direction. This allows the influence of acceleration and temperature gradients to be measured not only in the x direction but also in the y direction. In the MEMS sensor 32 according to the fourth embodiment, a single seismic mass 6 is provided for all sensor cores 4, 5, 33, 34.

[0070] Figure 7 a schematically shows a MEMS sensor 36 according to a fifth embodiment in a top view, Figure 7 FIG. 2 b shows a MEMS sensor 37 according to a sixth embodiment. Figure 7A MEMS sensor 38 according to a forty-seventh embodiment is shown in c. The reference numerals used hitherto are retained.

[0071] Figure 7 The MEMS sensors 36, 37, 38 have one thing in common, namely, a main core 39 is provided, which is arranged on the upper side 3 of the substrate 2 and has a micro-electromechanical structure for measuring acceleration in a direction parallel and / or perpendicular to the substrate 2. Any known micro-electromechanical structure can be used for the main core 39. The main core 39 is configured to detect or measure acceleration in the x-direction, the y-direction and the z-direction, wherein the z-direction extends perpendicularly to the x-direction and the y-direction.

[0072] according to Figure 7 a, that is, the MEMS sensor 36 according to the fifth embodiment has a first sensor core 4, a second sensor core 5, a third sensor core 33, and a fourth sensor core 34 in addition to the main core 39. Figure 7 The MEMS sensor 36 of a is formed by the MEMS sensor 32 according to the fourth embodiment, wherein the main core 39 is additionally also arranged on the substrate 2. The sensor cores 4, 5, 33, 34 are provided for compensating the acceleration signal of the main core 39, wherein the influence of the temperature gradient in the x and y directions can be compensated or a temperature gradient offset can be provided. The third and fourth sensor cores 33, 34 can also be omitted. In the MEMS sensor 36 according to the fifth embodiment, a separate vibration mass 6 is provided for the first, second, third and fourth sensor cores 4, 5, 33, 34, respectively. In addition, according to Figure 7 The MEMS sensor 36 of FIG. 1 has a fifth sensor core 40 for compensating the acceleration signal of the main core 39 in the z direction. The fifth sensor core 40 will be described in detail below. The fifth sensor core 40 may also be omitted.

[0073] according to Figure 7 b, that is, MEMS sensor 37 according to the sixth embodiment has main core 39, fifth sensor core 40 and at least first and second sensor cores 4, 5 and, if necessary, third and fourth sensor cores 33, 34. Unlike MEMS sensor 37 according to the sixth embodiment, a common seismic mass 35 is provided for first and second sensor cores 4, 5 and for third and fourth sensor cores 33, 34, respectively. For this reason, in Figure 7 In b, first and second sensor cores 4 , 5 as well as third and fourth sensor cores 33 , 34 are represented by common elements.

[0074] according to Figure 7c, that is, the MEMS sensor 38 according to the seventh embodiment has a main core 39 and at least a first and a second sensor core 4, 5 and optionally a third and a fourth sensor core 33, 34. In the MEMS sensor 38 according to the seventh embodiment, a common seismic mass 35 is provided for each of the first and second sensor cores 4, 5 and the third and the fourth sensor cores 33, 34. In addition, the first and the second sensor cores 4, 5 are components of a fifth sensor core 40. The third and the fourth sensor cores 33, 34 are components of another fifth sensor core 40.

[0075] Figure 8 The MEMS sensor 41 according to the eighth embodiment is shown in a top view. Figure 7 b has similarities to the MEMS sensor 37 according to the sixth embodiment. Only the differences are described below. For simplicity, Figure 8 The main core 39 is not shown. Figure 8 The substrate 2 is not shown in the figure. Figure 7 b is a main core 39 arranged on the substrate 2.

[0076] In accordance with Figure 8 In the MEMS sensor 41 of FIG. 4 , a common seismic mass 35 is provided for the sensor cores 4, 5, 33, 34. In contrast, in the case of Figure 7 In the MEMS sensor 37 of FIG. 1 , a common seismic mass 35 is provided for each of the first and second sensor cores 4 , 5 and for each of the third and fourth sensor cores 33 , 34 , that is, for each of the x and y directions. Figure 8 In the MEMS sensor 41 of FIG. 4 , the seismic masses of the first, second, third and fourth sensor cores 4 , 5 , 33 , 34 are fixedly connected to one another and form a common seismic mass 35 . Therefore, the common seismic mass 35 is constructed as a whole. However, different sections of the common seismic mass 35 can distinguish and indicate the seismic masses 6 of the individual sensor cores 4 , 5 , 33 , 34 . However, the seismic masses 6 of the individual sensor cores 4 , 5 , 33 , 34 are coupled.

[0077] Common seismic mass 35 is designed in a frame-like manner and has a four-fold mass symmetry about an axis of rotation that passes through the center of gravity 42 of common seismic mass 35 and extends perpendicularly to substrate 2. In addition, common seismic mass 35 is connected to an anchor 44 arranged on top 3 of substrate 2 and in the region of center of gravity 35 via further spring elements 43. For example, four further spring elements 43 are provided, which extend from the frame-like common seismic mass 35 in the direction of anchor 44, more precisely, four spring elements 43 extend centrally from a side region of the frame-like common seismic mass 35 in the direction of anchor 44. Two further spring elements 43 are opposite to anchor 44 and extend in the x-direction. Likewise, two further spring elements 43 are opposite to anchor 44 and extend in the y-direction. As a result, common seismic mass 35 is suspended symmetrically. Common seismic mass 35 laterally surrounds further spring elements 43 and anchor 44. Furthermore, sensor cores 4 , 5 , 33 , 34 are laterally surrounded by a common seismic mass 35 . Asymmetrical damping electrodes 20 , 21 of first and second sensor cores 4 , 5 are arranged perpendicularly to two further spring elements 43 , and asymmetrical damping electrodes 20 , 21 of third and fourth sensor cores 33 , 34 are arranged perpendicularly to two further spring elements 43 .

[0078] Due to the mass symmetry and symmetrical suspension of common seismic mass 35, lateral acceleration forces acting in the x and / or y direction cause compensation of deflections of seismic mass segments 6 of individual sensor cores 4, 5, 33, 34 forming common seismic mass 35, thereby effectively not causing a deflection of common seismic mass 35. However, sensor cores 4, 5, 33, 34 are not effectively subjected to the same deflection as described above. Figures 1 to 3 The asymmetrical arrangement of damping fingers 20 , 21 is configured to provide a TG offset in order to compensate for the influence of the acceleration signal and the temperature gradient of main core 39 , wherein compensation can be performed in the x and y directions. Thus, the deflection of common seismic mass 35 is caused only by the temperature gradient and the radiation effect.

[0079] Fig. 9 Schematically shown in top view Figure 7 a and Figure 7 b The fifth sensor core 40 of the MEMS sensor 36 , 37 .

[0080] The fifth sensor core has a rocker 45 suspended on the upper side 3 of the substrate 2, which has a symmetrical mass distribution with respect to the rotation axis 46 of the rocker 45 parallel to the substrate 2. The rocker 45 is connected to the anchor 44 along the rotation axis 46 via two further spring elements 43. The further spring elements 43 are arranged opposite each other with respect to the anchor 43. The rocker 45 is designed in a frame-like manner and laterally surrounds the anchor 43 and the further spring elements 43. The rocker 45 is mounted rotatably about the rotation axis 46, but when acceleration acts in the z direction, no deflection of the rocker 45 is caused because the rocker 45 has a symmetrical mass distribution with respect to the rotation axis 46.

[0081] The rocker 45 has a first through-hole 47 and a second through-hole 48. The first through-hole 47 and the second through-hole 48 are arranged on opposite sides of the rotation axis 46. In addition, the first through-hole 47 and the second through-hole 48 each have a through-hole with a different geometry and / or aspect ratio. As a result, different radiation effects act in the Z direction, so that the influence of the temperature gradient in the z direction can be detected by the deflection of the rocker 45 about the rotation axis 46. For this reason, the through-holes 47, 48 can also be called asymmetric. Therefore, in the case of vertical acceleration, i.e. in the z direction, the correction can be made. Figure 7 a and b are acceleration signals of the main core 39 of the MEMS sensors 36 , 37 .

[0082] Fig.10 Schematically shown in top view Figure 7 c. The fifth sensor core 40 of the MEMS sensor 38 . Fig. 9 and Fig.10 The fifth sensor core 40 in FIG. 1 has common features. Only the differences are explained below.

[0083] and Fig. 9 Compared with the fifth sensor core 40, Fig.10 The fifth sensor core 40 has a first and a second sensor core 4, 5. In this case, a common seismic mass 35 is provided for all sensor cores 4, 5, and the rocker 45 is formed by the common seismic mass 35. The first sensor core 4 and the second sensor core 5 are arranged on opposite sides of the rotation axis 46 of the rocker 45. The asymmetrical damping electrodes 20, 21 are arranged so as to extend perpendicularly to the rotation axis 46. For example, the sensor cores 4, 5 are arranged on the inside with respect to the rotation axis 46, while the perforations 47, 48 are arranged on the outside, i.e., away from the rotation axis 46 compared to the sensor cores 4, 5. The first and second sensor cores 4, 5 are therefore components of the fifth sensor core 40. As a result, the acceleration signal of the main core 39 can be compensated in the x direction and simultaneously in the z direction.

[0084] As in Figure 7c, the third and fourth sensor cores 33, 34 can be components of an additional fifth sensor core 40 of a MEMS sensor 38. Thus, the main core 39 can also be corrected in the y direction to eliminate the influence of temperature gradients. The rotation axis 46 of the rocker 45 of the additional fifth sensor core 40 extends in the y direction.

Claims

1. A micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41), comprising: a substrate (2), a first sensor core (4) and a second sensor core (5), in, The sensor cores (4, 5) are arranged laterally next to each other on the upper side (3) of the substrate (2) and each have a seismic mass (6), a fixed electrode (7) and a movable electrode (8), wherein the fixed electrode (7) is arranged on the upper side (3) of the substrate (2) and the movable electrode (8) is fixedly connected to the seismic mass (6) of the respective sensor core (4, 5), The fixed electrode (7) and the movable electrode (8) are arranged perpendicular to the substrate (2) and extend parallel to each other, and the directly adjacent fixed electrodes (7) and movable electrodes (8) of the sensor cores (4, 5) each form a capacitor (9). The seismic mass (6) is suspended above the upper side (3) of the substrate (2) by means of spring elements (10) and anchoring portions (11) arranged on the upper side (3) of the substrate (2), respectively, so that the seismic mass (6) can be deflected in a first direction parallel to the upper side (3) of the substrate (2) and perpendicular to the fixed electrode (7), wherein the seismic mass (6) of the sensor core is at different distances from the fixing element (22) in each case in the deflection direction and on mutually opposite sides of at least one fixing element (22) of the respective sensor core (4, 5), The first sensor core (4) and the second sensor core (5) are designed identically, and the second sensor core (5) has an azimuthal offset of 180° relative to the first sensor core (4).

2. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to claim 1, in, The sensor cores (4, 5) each have a fixed damping electrode (20) and the seismic mass (6) of the sensor cores (4, 5) have a movable damping electrode (21). wherein the fixed damping electrode (20) is arranged on the upper side (3) of the substrate (2) and forms a fixing element (22) of the sensor core (4, 5), The fixed damping electrode (20) and the movable damping electrode (21) are arranged parallel to the fixed electrode (7) and the movable electrode (8). The fixed damping electrodes and the movable damping electrodes (20, 21) are arranged alternately along the deflection direction of the seismic mass (6), and the distances between a damping electrode (20, 21) of a sensor core (4, 5) and two directly adjacent damping electrodes (20, 21) are of different sizes.

3. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to claim 2, in, The fixed damping electrode (20) and the movable damping electrode (21) each have a thickness measured in the deflection direction of the seismic mass (6), The thickness of the fixed damping electrode (60) and / or the movable damping electrode (21) is adjusted along the extension direction of the fixed damping electrode (20) and / or the movable damping electrode (21).

4. A micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, in, Each sensor core (4, 5) is laterally surrounded by a frame (30) which is arranged on the upper side (3) of the substrate (2) and the frame (30) forms a fastening element (22) for the sensor core. The distances between the seismic mass (6) and the frame (30) in the deflection direction and formed on mutually opposite sides of the frame (30) are of different sizes in the rest position of the seismic mass (6).

5. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, in, The sensor cores (4, 5) each have at least one stop (14) arranged on the upper side (3) of the substrate (2), and the stop (14) forms a fixing element (22) of the sensor core. The distances between the seismic mass (6) and the stop (14) formed in the deflection direction on mutually opposite sides of the stop (14) of the sensor core (4, 5) are of different sizes in the rest position of the seismic mass (6).

6. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, comprising: A third sensor core (33) and a fourth sensor core (34), wherein: The third sensor core (33) and the fourth sensor core (34) are arranged laterally next to one another and next to the first sensor core (4) and the second sensor core (5) on the top side (3) of the substrate (2), The sensor cores (4, 5, 33, 34) are identically constructed, and the third sensor core (33) has an azimuthal offset of 90° relative to the first sensor core (4), and the fourth sensor core (34) has an azimuthal offset of 90° relative to the second sensor core (5), whereby the seismic masses (6) of the third sensor core (33) and the fourth sensor core (34) can be deflected in a second direction parallel to the substrate (2) and perpendicular to the first direction.

7. A micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, in, A separate seismic mass (6) or a common seismic mass (35) is provided for all sensor cores (4, 5, 33, 34).

8. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, comprising: a rocker (45) suspended above the upper side (3) of the substrate (2) and having a symmetrical mass distribution about a rotation axis (46) of the rocker (45) extending parallel to the substrate (2), in, The rocker (45) has a first through hole (47) and a second through hole (48). wherein the first through hole (47) and the second through hole (48) are arranged on opposite sides of the rotation axis (46), The first through hole (47) and the second through hole (48) respectively have through holes, and the through holes have different geometric shapes and / or length-to-width ratios.

9. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to claims 7 and 8, in, A common seismic mass (35) is provided for all sensor cores (4, 5), and the rocker (45) is formed by the common seismic mass (35), Therein, the first sensor core (4) and the second sensor core (5) are arranged on opposite sides of the rotation axis (46).

10. The micro-electromechanical acceleration sensor (1, 29, 31, 32, 36, 37, 38, 41) according to any one of the preceding claims, comprising: A main core (39) is arranged on the upper side (3) of the substrate (2), the main core having a micro-electromechanical structure for measuring acceleration in a direction parallel and / or perpendicular to the substrate (2).

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