Recoverable defect filling dynamic measurement method and device and computer equipment

Abstract

The invention relates to the technical field of device semiconductor reliability, in particular to a recoverable defect filling dynamic measurement method and device and computer equipment. The method comprises the steps of applying stress voltage to an initial device based on stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is subjected to permanent defect degradation due to continuous stress voltage application; carrying out recoverable defect release on the degraded device to obtain a released degraded device; and performing recoverable defect filling dynamic measurement on the released degraded device to obtain a recoverable defect filling dynamic state corresponding to the initial device. According to the method, the influence of charging of the permanent defect on the recoverable defect filling dynamic state is eliminated, the recoverable defect filling dynamic state corresponding to the initial device is accurately obtained, and the method plays an important supporting role in research of an NBTI degradation mechanism and development of model construction.

Description

Technical Field

[0001] The present application relates to the field of semiconductor device reliability technology, and in particular to a recoverable defect filling dynamic measurement method, device and computer equipment. Background Art

[0002] The NBTI (Negative Bias Temperature Instability) effect directly causes the key electrical parameters of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices, such as threshold voltage, transconductance, drain current and subthreshold swing, to shift over time, thereby reducing the performance of analog and digital circuits, and shortening the life of devices and circuits. In addition, with the evolution of MOSFET technology, recoverable defects in the MOSFET gate dielectric layer are becoming more and more important.

[0003] Although the prior art can realize the dynamic total amount detection of filling for permanent defects and recoverable defects, it is unable to realize the dynamic measurement of filling only for recoverable defects. Summary of the invention

[0004] Based on this, it is necessary to provide a method, device and computer equipment for dynamic measurement of restorable defect filling, which can realize dynamic measurement of filling only for restorable defects, in order to solve the above technical problems.

[0005] In a first aspect, the present application provides a method for dynamic measurement of recoverable defect filling. The method comprises:

[0006] Applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0007] performing recoverable defect release on the degraded device to obtain a released degraded device;

[0008] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0009] In one embodiment, the measuring of the filling dynamics of the recoverable defects of the released degraded device to obtain the recoverable defect filling dynamics corresponding to the initial device includes:

[0010] Performing filling dynamic measurement of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics;

[0011] A mean operation is performed on the at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0012] In one embodiment, the filling dynamics of the recoverable defects of the released degraded device are measured to obtain at least two candidate filling dynamics, including:

[0013] Determine the filling dynamic measurement cycle;

[0014] Performing a filling dynamic measurement of recoverable defects on the released degraded device within the filling dynamic measurement period by a single-point measurement method to obtain at least two reference threshold voltages corresponding to the starting time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the ending time of the filling dynamic measurement period of the released degraded device;

[0015] At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

[0016] In one embodiment, the filling dynamic measurement period is shorter than the stress voltage application time.

[0017] In one of the embodiments, an initial threshold voltage of the initial device before applying a stress voltage is obtained;

[0018] Applying a stress voltage to the initial device during a stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage corresponding to the degraded device at the end of the stress voltage application time;

[0019] The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

[0020] In one of the embodiments, after the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release;

[0021] The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined according to the initial threshold voltage and the recovery threshold voltage.

[0022] In a second aspect, the present application also provides a recoverable defect filling dynamic measurement device. The device comprises:

[0023] A determination module, configured to apply a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0024] A release module, used for releasing recoverable defects of the degraded device to obtain a released degraded device;

[0025] The measurement module is used to measure the filling dynamics of recoverable defects of the released degraded device to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0026] In a third aspect, the present application further provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0027] Applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0028] performing recoverable defect release on the degraded device to obtain a released degraded device;

[0029] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0030] In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0031] Applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0032] performing recoverable defect release on the degraded device to obtain a released degraded device;

[0033] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0034] In a fifth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0035] Applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0036] performing recoverable defect release on the degraded device to obtain a released degraded device;

[0037] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0038] The above-mentioned recoverable defect filling dynamic measurement method, device and computer equipment obtain a degraded device by applying a stress voltage to the initial device; release the recoverable defects of the degraded device to obtain the degraded device after release, and then perform a dynamic measurement of the filling of recoverable defects on the degraded device after release to obtain the recoverable defect filling dynamics corresponding to the initial device. According to the above content, in the process of performing recoverable defect filling dynamic measurement on the initial device, the present application will first apply a stress voltage for the stress voltage application time to the initial device to obtain the degraded device after permanent defect degradation. Since the degraded device has permanent defect degradation, the subsequent permanent defects can be suppressed, ensuring the subsequent dynamic measurement of recoverable defect filling, eliminating the influence of permanent defect charging on the recoverable defect filling dynamics; and, by performing recoverable defect release on the degraded device, it is ensured that the subsequent steps of accurately obtaining the recoverable defect filling dynamics corresponding to the initial device can be realized, which plays an important supporting role in the research of NBTI degradation mechanism and the development of model construction. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] FIG1 is a diagram showing an application environment of a recoverable defect filling dynamic measurement method provided by an embodiment of the present application;

[0040] FIG2 is a schematic flow chart of a first method for dynamic measurement of restorable defect filling provided in an embodiment of the present application;

[0041] FIG3 is a dynamic diagram of defect degradation provided in an embodiment of the present application;

[0042] FIG4 is a schematic diagram of a first stress voltage pressure test provided in an embodiment of the present application;

[0043] FIG5 is a schematic diagram of a second stress voltage pressure test provided in an embodiment of the present application;

[0044] FIG6 is a schematic flow chart of a second method for dynamic measurement of restorable defect filling provided in an embodiment of the present application;

[0045] FIG7 is a schematic flow chart of a third method for dynamic measurement of restorable defect filling provided in an embodiment of the present application;

[0046] FIG8 is a waveform diagram of a single-point Id measurement method provided in an embodiment of the present application;

[0047] FIG9 is a schematic flow chart of a fourth method for dynamic measurement of restorable defect filling provided in an embodiment of the present application;

[0048] FIG10 is a waveform diagram of an extended Id measurement method provided in an embodiment of the present application;

[0049] FIG11 is a schematic flow chart of a fifth method for dynamic measurement of restorable defect filling provided in an embodiment of the present application;

[0050] FIG12 is a structural block diagram of a first recoverable defect filling dynamic measurement device provided in an embodiment of the present application;

[0051] FIG. 13 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0053] The dynamic measurement method for restorable defect filling provided in the embodiment of the present application can be applied in the application environment shown in Figure 1. Among them, the terminal 102 communicates with the server 104 through the network. The data storage system can store the data that the server 104 needs to process. The data storage system can be integrated on the server 104, or it can be placed on the cloud or other network servers. By applying a stress voltage to the initial device, a degraded device is obtained; the degraded device is released with recoverable defects to obtain a degraded device after release, and then, the restorable defect filling dynamic measurement is performed on the degraded device after release to obtain the restorable defect filling dynamic corresponding to the initial device. Among them, the terminal 102 can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers, Internet of Things devices and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, etc. Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. The server 104 can be implemented with an independent server or a server cluster consisting of multiple servers.

[0054] In one embodiment, as shown in FIG. 2 , a recoverable defect filling dynamic measurement method is provided, and the method is applied to the server 104 in FIG. 1 as an example for description, including the following steps:

[0055] S201, applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device.

[0056] Among them, the degraded device is a device after the initial device is degraded by permanent defects due to the continuous application of stress voltage;

[0057] It should be noted that when it is necessary to measure the filling dynamics of recoverable defects, the influence of the charging of permanent defects on the filling dynamics of recoverable defects needs to be excluded. Under the action of NTBI stress, the charging of permanent defects and recoverable defects jointly leads to a positive drift of the absolute value of the device threshold voltage |Vth|. The filling dynamics of recoverable defects cannot be obtained from the change of the absolute value of the threshold voltage |ΔVth| over time. Therefore, it is necessary to separate the charging process of permanent defects from the positive drift of |ΔVth| of NBTI.

[0058] According to the power law that the degradation of permanent defects conforms to, the time index n of NBTI ranges from about 0.15 to 0.3; this means that |ΔVth|_P (i.e., the absolute value change of the threshold voltage caused by permanent defect charging) will increase rapidly with time when the stress is just applied. As the stress voltage application time becomes longer, the rate at which |ΔVth|_P increases with stress time will slow down rapidly, which means that the permanent defects that have already occurred will strongly inhibit the generation of subsequent permanent defects.

[0059] The degradation of permanent defects follows a power law as shown below:

[0060]

[0061] Where n is the time index of NBTI degradation, m is the electric field acceleration factor of NBTI degradation, and |ΔVth|_P is the absolute value change of the threshold voltage caused by permanent defect charging.

[0062] Furthermore, the degradation dynamics of |ΔVth|_P when the time index of NBTI degradation is 0.2 is shown in Figure 3, where the left figure is a double logarithmic coordinate and the right figure is a linear coordinate. On the initial device that has not been subjected to NBTI stress voltage, the NBTI stress voltage from 0 to 1000 seconds will produce 19.95mV of |ΔVth|_P, while on the device that has been subjected to 9000 seconds of gate stress voltage and has generated a large number of permanent defects, the |ΔVth|_P only increases by 0.26mV after the NBTI stress voltage is applied for 1000 seconds. Therefore, it is difficult to continue to generate additional permanent defects in a short time if the same NBTI stress is applied to the degraded device with severe |ΔVth|_P degradation, that is, a large number of permanent defects have been generated.

[0063] Different from the degradation |ΔVth|_P caused by permanent defects, the |ΔVth|_R of recoverable defects (i.e., the absolute value change of threshold voltage caused by charging of recoverable defects) is characterized by positive drift when NBTI stress voltage is applied and negative drift after NBTI stress voltage is removed, and |ΔVth|_R and |ΔVth|_P are independent of each other. Therefore, when the degraded device has been severely degraded, conducting NBTI tests on degraded devices with large |ΔVth|_P can exclude the influence of permanent defects from the filling dynamics of |ΔVth|.

[0064] In one embodiment of the present application, as shown in FIG4 , if the stress voltage application time is 1000 seconds, two NBTI stress 100 seconds / recovery 100 seconds tests are carried out on the initial device to which the NBTI stress voltage has been applied for 1000 seconds (the stress test uses the single-point Id measurement method, and the recovery test uses the extended Id measurement method). It can be seen that the recoverable defects (“△”) filled in the NBTI initial device for 100 seconds can be completely released (“▽”), proving that the filling dynamics shown by “△” only include recoverable defects, and the filling dynamics shown by “◇” in the second NBTI stress 100 seconds filling test are exactly the same as the first one, further proving that it only includes the filling process of recoverable defects. Among them, the results of the NBTI stress voltage 100 seconds / recovery 100 seconds test are shown in FIG5 .

[0065] S202, releasing recoverable defects of the degraded device to obtain a released degraded device.

[0066] It should be noted that in order to ensure that the subsequent dynamic measurement of recoverable defect filling can be smoothly performed, the recoverable defect of the degraded device needs to be released first to ensure that the recoverable defect filling dynamics corresponding to the initial device can be successfully obtained subsequently.

[0067] In one embodiment of the present application, if the time length between the time when the stress voltage is applied to the initial device and the current time is greater than or equal to the stress voltage application time, the stress voltage for the initial device can be removed; and the threshold voltage recovery of the degraded device after the stress is removed is monitored. If it is monitored that the recoverable defects of the degraded device are completely recovered, the degraded device after release is obtained.

[0068] S203, measuring the filling dynamics of recoverable defects on the released degraded device to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0069] It should be noted that when it is necessary to perform dynamic measurement of the filling of recoverable defects on the degraded device after release, a stress voltage with a shorter stress time can be applied to achieve the measurement of the Id-Vg characteristic curve by a single-point Id measurement method during the application of the stress voltage, and extract Vth; the Vth obtained by each measurement is subtracted from the Vth before the stress is applied (i.e., the Vth after severe degradation) to obtain |ΔVth|; since a large number of permanent defects have been generated in the device at this time, when stress is applied again, mainly recoverable defects are generated, thereby achieving dynamic measurement of the filling of recoverable defects on the degraded device after release, and obtaining the recoverable defect filling dynamics corresponding to the initial device.

[0070] The above-mentioned recoverable defect filling dynamic measurement method obtains a degraded device by applying a stress voltage to the initial device; the degraded device is released with recoverable defects to obtain the degraded device after release, and then the recoverable defect filling dynamic measurement is performed on the degraded device after release to obtain the recoverable defect filling dynamic corresponding to the initial device. According to the above content, in the process of performing recoverable defect filling dynamic measurement on the initial device, the present application will first apply a stress voltage for the stress voltage application time to the initial device to obtain the degraded device after permanent defect degradation occurs. Since the degraded device is degraded with permanent defects, the subsequent permanent defects can be suppressed, ensuring the subsequent dynamic measurement of recoverable defect filling, eliminating the influence of permanent defect charging on the recoverable defect filling dynamic; and, by performing recoverable defect release on the degraded device, it is ensured that the subsequent steps of accurately obtaining the recoverable defect filling dynamic corresponding to the initial device can be realized, which plays an important supporting role in the research of NBTI degradation mechanism and the development of model construction.

[0071] In one embodiment, as shown in FIG6 , when it is necessary to measure the filling dynamics of recoverable defects of a released degraded device to obtain the recoverable defect filling dynamics corresponding to the initial device, the following contents may be specifically included:

[0072] S601, measuring the filling dynamics of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics.

[0073] It should be noted that in order to further ensure the accuracy of the subsequent determination of the recoverable defect filling dynamics, multiple groups of recoverable defect filling dynamics measurements can be performed on the released degraded device to obtain multiple candidate filling dynamics, and then, the recoverable defect filling dynamics corresponding to the initial device can be determined based on the multiple candidate filling dynamics.

[0074] It is further explained that when it is necessary to perform filling dynamic measurement of recoverable defects on the degraded device after release, the following contents may be specifically included: determining a filling dynamic measurement period; performing filling dynamic measurement of recoverable defects on the degraded device after release within the filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the starting time of the filling dynamic measurement period of the degraded device after release, and at least two target threshold voltages corresponding to the ending time of the filling dynamic measurement period; determining at least two candidate filling dynamics according to the at least two target threshold voltages and the at least two reference threshold voltages.

[0075] The filling dynamic measurement period is shorter than the stress voltage application time.

[0076] Specifically, a difference operation may be performed between the target threshold voltage and the corresponding reference threshold voltage to obtain a candidate fill dynamic.

[0077] In one embodiment, the filling dynamic measurement period is determined to be 100 seconds, and thus filling dynamic measurement of recoverable defects is performed on the released degraded device within the filling dynamic measurement period by a single-point measurement method within a range of 2000 to 2100 seconds, and a first reference threshold voltage corresponding to the starting moment of the filling dynamic measurement period of the released degraded device and a first target threshold voltage corresponding to the ending moment of the filling dynamic measurement period are obtained; filling dynamic measurement of recoverable defects is performed on the released degraded device within the filling dynamic measurement period by a single-point measurement method within a range of 2100 to 2200 seconds, and a second reference threshold voltage corresponding to the starting moment of the filling dynamic measurement period of the released degraded device and a second target threshold voltage corresponding to the ending moment of the filling dynamic measurement period are obtained; a difference operation is performed between the first target threshold voltage and the first reference threshold voltage, and a difference operation is performed between the second target threshold voltage and the second reference threshold voltage, to obtain at least two candidate filling dynamics.

[0078] S602, performing a mean operation on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0079] In one embodiment of the present application, in order to ensure the accuracy of the finally determined recoverable defect filling dynamics, a mean operation may be performed on at least two calculated candidate filling dynamics, and the obtained mean operation result is the recoverable defect filling dynamics.

[0080] The above-mentioned recoverable defect filling dynamics measurement method performs recoverable defect filling dynamics measurement on the released degraded device within the filling dynamics measurement period through a single-point measurement method to obtain at least two candidate filling dynamics, and then performs a mean operation on the at least two candidate filling dynamics to obtain the recoverable defect filling dynamics corresponding to the initial device, thereby ensuring the accuracy of the determination of the recoverable defect filling dynamics and eliminating the influence of the charging of permanent defects on the recoverable defect filling dynamics, which plays an important supporting role in the research of NBTI degradation mechanism and the development of model construction.

[0081] In one embodiment, as shown in FIG. 7 , when applying a stress voltage to an initial device, the following may be included:

[0082] S701, obtaining an initial threshold voltage of an initial device before applying a stress voltage.

[0083] It should be noted that when it is necessary to obtain the initial threshold voltage of the initial device before the stress voltage is applied, the initial Id-Vg curve (drain-source current-gate-source voltage characteristic curve) can be measured before the stress voltage is applied to the initial device, and then the initial threshold voltage in the Id-Vg curve can be extracted.

[0084] S702 , applying a stress voltage to the initial device during the stress voltage application time by a single-point measurement method, and obtaining a candidate threshold voltage of the degraded device corresponding to the end time of the stress voltage application time.

[0085] In one embodiment of the present application, the single-point measurement method is the spot-Id sense measurement method, which is an NBTI measurement method capable of measuring recoverable defects; its waveform is shown in Figure 8. ΔVth is calculated by measuring ΔId at Vgsense (generally |Vgsense|=|Vth0|+0.2V) and then extrapolating to the initial complete Id-Vg curve. Since only one point needs to be measured, the measurement time is much shorter than the traditional quasi-static DC complete Id-Vg measurement method, and the dynamic total amount of permanent defects and recoverable defects can be measured.

[0086] S703, determining the total dynamic filling amount of permanent defects and recoverable defects corresponding to the initial device according to the candidate threshold voltage and the initial threshold voltage.

[0087] In one embodiment of the present application, a difference operation is performed on the candidate threshold voltage and the initial threshold voltage, and the result obtained is the dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device.

[0088] The above-mentioned recoverable defect filling dynamic measurement method applies stress voltage to the initial device during the stress voltage application time through a single-point measurement method to achieve NBTI measurement of recoverable defects for the initial device, so as to obtain the dynamic total amount of permanent defects and recoverable defects corresponding to the initial device when a degraded device is obtained.

[0089] In one embodiment, as shown in FIG9 , the present application may further include the following contents:

[0090] S901, performing threshold voltage recovery measurement on the degraded device after the stress voltage of the degraded device is removed by an extension measurement method, to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release.

[0091] It should be noted that the extended measurement method is the extended Id sense measurement method, which is used to measure the release dynamics of recoverable defects after the NBTI stress is removed. The test waveform is shown in Figure 10. The extended Id test method measures Vth in exactly the same way as the single-point Id test method. The difference is that it does not just measure the current value of one point at the Vgsense voltage, but measures multiple current values ​​at a series of logarithmically increasing time points. In this way, the recovery characteristics of ΔVth over time when the voltage is at Vgsense after the NBTI stress is removed can be obtained.

[0092] Among them, the extended Id measurement method is suitable for measuring the release dynamics of recoverable defects, but cannot measure the recoverable defect filling dynamics corresponding to the initial device.

[0093] S902, determining a filling and releasing dynamics of a recoverable defect corresponding to an initial device according to an initial threshold voltage and a recovery threshold voltage.

[0094] In one embodiment of the present application, a difference operation is performed on the recovery threshold voltage and the initial threshold voltage, and the result obtained is the filling and releasing dynamics of the recoverable defect corresponding to the initial device.

[0095] The above-mentioned recoverable defect filling dynamic measurement method performs threshold voltage recovery measurement on the degraded device after the stress voltage of the degraded device is removed by an extended measurement method, and obtains the degraded device after release, and the recovery threshold voltage corresponding to the degraded device after release, so as to obtain the filling release dynamics of the recoverable defect corresponding to the initial device when the recoverable defect of the degraded device is released.

[0096] In one embodiment, as shown in FIG. 11 , when it is necessary to determine the recoverable defect filling dynamics corresponding to the initial device, the following contents may be included:

[0097] S1101, applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device.

[0098] S1102, releasing recoverable defects of the degraded device to obtain a released degraded device.

[0099] S1103, determine the filling dynamic measurement period.

[0100] S1104, performing a filling dynamic measurement of recoverable defects on the released degraded device within a filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the starting moment of the filling dynamic measurement period of the released degraded device, and at least two target threshold voltages corresponding to the ending moment of the filling dynamic measurement period.

[0101] S1105 , determining at least two candidate fill dynamics according to at least two target threshold voltages and at least two reference threshold voltages.

[0102] S1106, performing a mean operation on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0103] The above-mentioned recoverable defect filling dynamic measurement method obtains a degraded device by applying a stress voltage to the initial device; the degraded device is released with recoverable defects to obtain the degraded device after release, and then the recoverable defect filling dynamic measurement is performed on the degraded device after release to obtain the recoverable defect filling dynamic corresponding to the initial device. According to the above content, in the process of performing recoverable defect filling dynamic measurement on the initial device, the present application will first apply a stress voltage for the stress voltage application time to the initial device to obtain the degraded device after permanent defect degradation occurs. Since the degraded device is degraded with permanent defects, the subsequent permanent defects can be suppressed, ensuring the subsequent dynamic measurement of recoverable defect filling, eliminating the influence of permanent defect charging on the recoverable defect filling dynamic; and, by performing recoverable defect release on the degraded device, it is ensured that the subsequent steps of accurately obtaining the recoverable defect filling dynamic corresponding to the initial device can be realized, which plays an important supporting role in the research of NBTI degradation mechanism and the development of model construction.

[0104] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0105] Based on the same inventive concept, the embodiment of the present application also provides a recoverable defect filling dynamic measurement device for implementing the recoverable defect filling dynamic measurement method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more recoverable defect filling dynamic measurement device embodiments provided below can refer to the limitations of the recoverable defect filling dynamic measurement method above, and will not be repeated here.

[0106] In one embodiment, as shown in FIG. 12 , a recoverable defect filling dynamic measurement device is provided, comprising: a determination module 10, a release module 20 and a measurement module 30, wherein:

[0107] The determination module 10 is used to apply stress voltage to the initial device based on the stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded by permanent defects due to continuous application of stress voltage.

[0108] The release module 20 is used to release recoverable defects of the degraded device to obtain the released degraded device.

[0109] The measurement module 30 is used to measure the filling dynamics of recoverable defects of the released degraded device to obtain the filling dynamics of recoverable defects corresponding to the initial device.

[0110] In one embodiment, a filling dynamics of a recoverable defect is measured on a released degraded device to obtain at least two candidate filling dynamics;

[0111] A mean operation is performed on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0112] In one embodiment, a filling dynamic measurement period is determined;

[0113] Performing a filling dynamic measurement of recoverable defects on the released degraded device within a filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the start time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the end time of the filling dynamic measurement period of the released degraded device;

[0114] At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

[0115] In one embodiment, the filling dynamic measurement period is shorter than the stress voltage application time.

[0116] In one embodiment, obtaining an initial threshold voltage of an initial device before applying a stress voltage;

[0117] Applying a stress voltage to the initial device during the stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage of the degraded device corresponding to the end time of the stress voltage application time;

[0118] The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

[0119] In one embodiment, after the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release;

[0120] The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined based on the initial threshold voltage and the recovery threshold voltage.

[0121] The above-mentioned recoverable defect filling dynamic measurement device obtains a degraded device by applying a stress voltage to the initial device; releases the recoverable defects of the degraded device to obtain the degraded device after release, and then performs a dynamic measurement of the filling of recoverable defects on the degraded device after release to obtain the recoverable defect filling dynamics corresponding to the initial device. According to the above content, in the process of performing recoverable defect filling dynamic measurement on the initial device, the present application will first apply a stress voltage for the stress voltage application time to the initial device to obtain the degraded device after permanent defect degradation occurs. Since the degraded device undergoes permanent defect degradation, the subsequent permanent defects can be suppressed, ensuring the subsequent dynamic measurement of recoverable defect filling, eliminating the influence of permanent defect charging on the recoverable defect filling dynamics; and, by performing recoverable defect release on the degraded device, it is ensured that the subsequent steps of accurately obtaining the recoverable defect filling dynamics corresponding to the initial device can be realized, which plays an important supporting role in the research of NBTI degradation mechanism and the development of model construction.

[0122] Each module in the above-mentioned recoverable defect filling dynamic measurement device can be implemented in whole or in part by software, hardware and their combination. Each module can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the corresponding operations of each module above.

[0123] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be shown in FIG13. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, the memory, and the input / output interface are connected via a system bus, and the communication interface, the display unit, and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner may be implemented through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a dynamic measurement method for restorable defect filling is implemented. The display unit of the computer device is used to form a visually visible picture, which may be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0124] Those skilled in the art will understand that the structure shown in FIG. 13 is merely a block diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0125] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0126] Applying a stress voltage to the initial device based on the stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0127] Releasing recoverable defects of the degraded device to obtain the released degraded device;

[0128] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the corresponding recoverable defect filling dynamics of the initial device.

[0129] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0130] Measuring the filling dynamics of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics;

[0131] A mean operation is performed on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0132] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0133] Determine the filling dynamic measurement cycle;

[0134] Performing a filling dynamic measurement of recoverable defects on the released degraded device within a filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the start time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the end time of the filling dynamic measurement period of the released degraded device;

[0135] At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

[0136] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0137] The filling dynamic measurement period is shorter than the stress voltage application time.

[0138] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0139] Obtaining an initial threshold voltage of an initial device before applying a stress voltage;

[0140] Applying a stress voltage to the initial device during the stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage of the degraded device corresponding to the end time of the stress voltage application time;

[0141] The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

[0142] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0143] After the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release;

[0144] The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined based on the initial threshold voltage and the recovery threshold voltage.

[0145] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0146] Applying a stress voltage to the initial device based on the stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0147] Releasing recoverable defects of the degraded device to obtain the released degraded device;

[0148] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the corresponding recoverable defect filling dynamics of the initial device.

[0149] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0150] Measuring the filling dynamics of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics;

[0151] A mean operation is performed on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0152] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0153] Determine the filling dynamic measurement cycle;

[0154] Performing a filling dynamic measurement of recoverable defects on the released degraded device within a filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the start time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the end time of the filling dynamic measurement period of the released degraded device;

[0155] At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

[0156] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0157] The filling dynamic measurement period is shorter than the stress voltage application time.

[0158] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0159] Obtaining an initial threshold voltage of an initial device before applying a stress voltage;

[0160] Applying a stress voltage to the initial device during the stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage of the degraded device corresponding to the end time of the stress voltage application time;

[0161] The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

[0162] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0163] After the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release;

[0164] The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined based on the initial threshold voltage and the recovery threshold voltage.

[0165] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0166] Applying a stress voltage to the initial device based on the stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage;

[0167] Releasing recoverable defects of the degraded device to obtain the released degraded device;

[0168] The filling dynamics of recoverable defects of the released degraded device are measured to obtain the corresponding recoverable defect filling dynamics of the initial device.

[0169] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0170] Measuring the filling dynamics of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics;

[0171] A mean operation is performed on at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

[0172] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0173] Determine the filling dynamic measurement cycle;

[0174] Performing a filling dynamic measurement of recoverable defects on the released degraded device within a filling dynamic measurement period by a single-point measurement method, and obtaining at least two reference threshold voltages corresponding to the start time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the end time of the filling dynamic measurement period of the released degraded device;

[0175] At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

[0176] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0177] The filling dynamic measurement period is shorter than the stress voltage application time.

[0178] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0179] Obtaining an initial threshold voltage of an initial device before applying a stress voltage;

[0180] Applying a stress voltage to the initial device during the stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage of the degraded device corresponding to the end time of the stress voltage application time;

[0181] The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

[0182] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0183] After the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and the recovery threshold voltage corresponding to the degraded device after release;

[0184] The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined based on the initial threshold voltage and the recovery threshold voltage.

[0185] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards of relevant countries and regions.

[0186] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0187] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0188] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for dynamic measurement of recoverable defect filling, characterized in that: The method comprises: Applying a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage; performing recoverable defect release on the degraded device to obtain a released degraded device; The filling dynamics of recoverable defects of the released degraded device are measured to obtain the filling dynamics of recoverable defects corresponding to the initial device.

2. The method according to claim 1, characterized in that The method of measuring the filling dynamics of recoverable defects of the released degraded device to obtain the filling dynamics of recoverable defects corresponding to the initial device includes: Performing filling dynamic measurement of recoverable defects on the released degraded device to obtain at least two candidate filling dynamics; A mean operation is performed on the at least two candidate filling dynamics to obtain a recoverable defect filling dynamic corresponding to the initial device.

3. The method according to claim 2, characterized in that The filling dynamics of the recoverable defects of the released degraded device are measured to obtain at least two candidate filling dynamics, including: Determine the filling dynamic measurement cycle; Performing a filling dynamic measurement of recoverable defects on the released degraded device within the filling dynamic measurement period by a single-point measurement method to obtain at least two reference threshold voltages corresponding to the starting time of the filling dynamic measurement period and at least two target threshold voltages corresponding to the ending time of the filling dynamic measurement period of the released degraded device; At least two candidate fill dynamics are determined based on the at least two target threshold voltages and the at least two reference threshold voltages.

4. The method according to claim 3, characterized in that The filling dynamic measurement period is shorter than the stress voltage application time.

5. The method according to claim 1, characterized in that: The method further comprises: Obtaining an initial threshold voltage of the initial device before applying a stress voltage; Applying a stress voltage to the initial device during a stress voltage application time by a single-point measurement method to obtain a candidate threshold voltage corresponding to the degraded device at the end of the stress voltage application time; The dynamic total amount of filling of permanent defects and recoverable defects corresponding to the initial device is determined according to the candidate threshold voltage and the initial threshold voltage.

6. The method according to claim 1, characterized in that The method further comprises: After the stress voltage of the degraded device is removed, a threshold voltage recovery measurement is performed on the degraded device by an extension measurement method to obtain the degraded device after release and a recovery threshold voltage corresponding to the degraded device after release; The filling and releasing dynamics of the recoverable defects corresponding to the initial device are determined according to the initial threshold voltage and the recovery threshold voltage.

7. A recoverable defect filling dynamic measurement device, characterized in that: The device comprises: A determination module, configured to apply a stress voltage to an initial device based on a stress voltage application time to obtain a degraded device; wherein the degraded device is a device after the initial device is degraded due to permanent defects caused by continuous application of the stress voltage; A release module, used for releasing recoverable defects of the degraded device to obtain a released degraded device; The measurement module is used to measure the filling dynamics of recoverable defects of the released degraded device to obtain the filling dynamics of recoverable defects corresponding to the initial device.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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