Patterning method, semiconductor structure and memory

Abstract

The application discloses a patterning method, a semiconductor structure and a memory. The patterning method comprises the following steps: after forming a mandrel structure in a mask layer on one side of a layer to be etched, removing part of the mandrel structure to form a first groove with a smaller length and a second groove with a larger length, and forming a first mask pattern and a second mask pattern by using the first groove and the second groove, so as to form a first patterning structure and a second patterning structure with different lengths. The application can improve the applicability of the patterning method, and reduce the process difficulty and cost of a fine patterning process for forming patterns with different sizes, so that the patterning method provided by the application can meet more process requirements.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, and in particular, to a patterning method, a semiconductor structure and a memory. BACKGROUND

[0002] Self Aligned Doubled Patterning (SADP) technology and Reverse Self Aligned Doubled Patterning (Reverse SARP) technology are currently mainstream technologies for making close array patterns.

[0003] Through the above process, a pattern with a target pitch can be made, and the pattern has a multiplied pattern density compared with the pattern defined by the first patterning process (i.e., the mandrel structure).

[0004] In addition, in some semiconductor structures, there is a need to form fine structures with different lengths, however, the current SADP technology and SARP technology still have great difficulties to overcome due to process limitations. SUMMARY

[0005] Embodiments of the present application provide a patterning method, a semiconductor structure and a memory, which can make first and second patterned structures with different lengths.

[0006] Embodiments of the present application provide a patterning method, which includes the following steps:

[0007] forming a to-be-etched layer and a first mask layer located on one side of the to-be-etched layer, the first mask layer having a plurality of spaced-apart mandrel structures formed therein, the mandrel structure having a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along an extension direction of the mandrel structure;

[0008] forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the to-be-etched layer;

[0009] removing the first material layer on a side of the first sub-portion away from the to-be-etched layer, and removing the first material layer located between adjacent first sub-portions and covering the to-be-etched layer on a side close to the first mask layer along a direction parallel to the to-be-etched layer, so as to form a first sidewall group at opposite sidewalls of the first sub-portion, the first sidewall group including two first sub-walls located on sidewalls of the first sub-portion;

[0010] removing the first sub portion to form a first trench between two first sub walls in the first sidewall group and a second trench between two adjacent first sidewall groups, and a length of the second trench is greater than a length of the first trench;

[0011] forming a first mask pattern and a second mask pattern in the to-be-etched layer through the first trench and the second trench respectively;

[0012] etching the to-be-etched layer by using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure, and a length of the second patterned structure is greater than a length of the first patterned structure.

[0013] In an embodiment of the present application, the step of forming the to-be-etched layer and the first mask layer on a side of the to-be-etched layer further comprises:

[0014] forming a second mask layer on a side of the to-be-etched layer and a first antireflection layer on a side of the second mask layer away from the to-be-etched layer;

[0015] forming the first mask layer on a side of the first antireflection layer away from the second mask layer, and performing a patterning process on the first mask layer to form a plurality of spaced-apart spindle structures.

[0016] In an embodiment of the present application, the step of forming the first material layer covering the plurality of spindle structures on a side of the first mask layer away from the to-be-etched layer further comprises:

[0017] forming the first material layer covering the plurality of spindle structures on a side of the first mask layer away from the first antireflection layer;

[0018] forming a first photoresist layer on a side of the first material layer away from the first mask layer, and the first sub portion is located outside a coverage range of the first photoresist layer, and the second sub portion is located within the coverage range of the first photoresist layer.

[0019] In an embodiment of the present application, the step of removing the first sub portion further comprises:

[0020] removing the first photoresist layer;

[0021] removing the first sub portion, and the first antireflection layer is left at a bottom of the first trench and the first antireflection layer is left at a bottom of the second trench;

[0022] removing the first material layer away from the second sub-portion side of the layer to be etched, and removing the first material layer covering the layer to be etched close to the first mask layer side in a direction parallel to the layer to be etched between adjacent second sub-portion sides to form a second sidewall group at opposite sidewalls of the second sub-portion, the second sidewall group including two second sub-walls at the sidewalls of the second sub-portion, and the second trench is between adjacent second sidewall groups.

[0023] In one embodiment of the present application, the step of removing the first material layer away from the second sub-portion side of the layer to be etched, and removing the first material layer covering the layer to be etched close to the first mask layer side in a direction parallel to the layer to be etched between adjacent second sub-portion sides to form a second sidewall group at opposite sidewalls of the second sub-portion, the second sidewall group including two second sub-walls at the sidewalls of the second sub-portion, and the second trench is between adjacent second sidewall groups further comprises:

[0024] removing the first anti-reflective layer at the bottom of the first trench and the second trench, and leaving the first anti-reflective layer at the second mask layer side away from the layer to be etched between the two second sub-walls in the second sidewall group.

[0025] In one embodiment of the present application, the step of forming a first mask pattern and a second mask pattern on the layer to be etched side of the first mask layer through the first trench and the second trench further comprises:

[0026] removing the second mask layer opposite to the first trench to form the first mask trench in the second mask layer, and removing the second mask layer opposite to the second trench to form the second mask trench in the second mask layer, and the length of the second mask trench is greater than the length of the first mask trench;

[0027] wherein the first mask pattern includes the first mask trench, and the second mask pattern includes the second mask trench.

[0028] In one embodiment of the present application, the step of etching the layer to be etched using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure further comprises:

[0029] removing at least part of the layer to be etched opposite to the first mask trench to form a first trench body in the layer to be etched, and removing at least part of the layer to be etched opposite to the second mask trench to form a second trench body in the layer to be etched, and the length of the second trench body is greater than the length of the first trench body;

[0030] The first patterned structure includes the first groove, and the second patterned structure includes the second groove.

[0031] In an embodiment of the present application, the step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched further comprises:

[0032] A second photoresist layer is formed on a side of the first material layer away from the first mask layer, and the first sub-portion is located outside a coverage range of the second photoresist layer, and the second sub-portion is located within the coverage range of the second photoresist layer.

[0033] In an embodiment of the present application, the step of removing the first sub-portion comprises:

[0034] The second photoresist layer is removed to form a third side wall group at opposite sidewalls of the second sub-portion, the third side wall group includes two third sub-walls located at sidewalls of the second sub-portion, and the second groove is formed between adjacent two third side wall groups, and the first material layer further comprises a spacer portion located at a bottom of the second groove and between adjacent third side wall groups;

[0035] The first sub-portion is removed to form the first groove between two first sub-walls in the first side wall group, and the second groove is further located between adjacent two first side wall groups.

[0036] In an embodiment of the present application, the step of forming a first mask pattern and a second mask pattern on a side of the layer to be etched provided with the first mask layer through the first groove and the second groove further comprises:

[0037] A first mask side wall is formed in the first groove, and a second mask side wall is formed in the second groove, and the second mask side wall covers a side of the spacer portion away from the layer to be etched between adjacent third side wall groups.

[0038] The first material layer except the spacer portion is removed.

[0039] The first mask pattern includes the first mask side wall, and the second mask pattern includes the second mask side wall.

[0040] In an embodiment of the present application, the step of etching the layer to be etched by using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure further comprises:

[0041] remove the to-be-etched layer not covered by the first mask sidewall and remove the to-be-etched layer not covered by the second mask sidewall to form a first trace and a second trace respectively, and a length of the second trace is greater than a length of the first trace;

[0042] The first patterned structure includes the first trace, and the second patterned structure includes the second trace.

[0043] In an embodiment of the present application, in the step of forming the first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the to-be-etched layer, the first material layer is formed by:

[0044] The second sub-portion is connected to the first sub-portion along an extension direction of the mandrel structure, and the second sub-portion is connected to one side of the first sub-portion or opposite sides of the first sub-portion.

[0045] In an embodiment of the present application, the material of the first mask layer includes an oxide material or a nitride material, and the material of the first material layer includes an oxide material or a nitride material.

[0046] According to the above-mentioned purposes of the present application, the embodiments of the present application further provide a semiconductor structure, wherein a first groove body and a second groove body are arranged in the semiconductor structure, a length of the second groove body is greater than a length of the first groove body, and the first groove body and the second groove body are formed by the first patterned structure and the second patterned structure formed by the patterning method.

[0047] According to the above-mentioned purposes of the present application, the embodiments of the present application further provide a semiconductor structure, wherein a first trace and a second trace are arranged in the semiconductor structure, a length of the second trace is greater than a length of the first trace, and the first trace and the second trace are formed by the first patterned structure and the second patterned structure formed by the patterning method.

[0048] According to the above-mentioned purposes of the present application, the embodiments of the present application further provide a memory including the semiconductor structure.

[0049] The present application provides a patterning method, a semiconductor structure and a memory. After forming a first material layer, a first groove with a smaller length and a second groove with a larger length are formed by removing part of the mandrel structure. The first groove and the second groove are used to form a first mask pattern and a second mask pattern, so as to form a first patterned structure and a second patterned structure with different lengths. The applicability of the patterning method is improved, and the process difficulty and cost of the fine patterning process for forming patterns with different sizes are reduced. The patterning method provided by the present application can meet more process requirements. BRIEF DESCRIPTION OF DRAWINGS

[0050] The technical solutions and other advantages of the present application will be readily understood from the following detailed description of specific embodiments of the application when considered in conjunction with the accompanying drawings.

[0051] Figures 1 to 7 Process flow diagrams of the patterning method provided for some embodiments;

[0052] Figure 8 Process flow diagrams of the patterning method provided for some embodiments of the present application;

[0053] Figure 9 , Figure 11 , Figure 13 , Figure 15 , Figure 17 , Figure 19 , Figure 21 , Figure 23 , Figure 25 , Figure 27 and Figure 29 Top views of a process of the patterning method shown in Figure 8

[0054] Figure 10 , Figure 12 , Figure 14 , Figure 16 , Figure 18 , Figure 20 , Figure 22 , Figure 24 , Figure 26 , Figure 28 and Figure 30 Front views of a process of the patterning method shown in Figure 8

[0055] Figure 31 , Figure 33 , Figure 35 , Figure 37 , Figure 39 , Figure 41 , Figure 43 and Figure 45 Top views of another process of the patterning method shown in Figure 8

[0056] Figure 32 , Figure 34 , Figure 36 , Figure 38 , Figure 40 , Figure 42 , Figure 44 and Figure 46 ​​​A plurality of front views in another process of the patterning method provided for some embodiments of the present application. Figure 8 A plurality of front views in another process of the patterning method provided for some embodiments of the present application.

[0057] Figure 47 A structural schematic diagram of the first and second patterning structures provided for some embodiments of the present application.

[0058] Figure 48 Another structural schematic diagram of the first and second patterning structures provided for some embodiments of the present application.

[0059] Figure 49 A structural schematic diagram of the storage system provided for some embodiments of the present application. DETAILED DESCRIPTION

[0060] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0061] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplifying the present application, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples. Such repetition is for the purpose of simplification and clarity, and does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0062] The process of the SADP fabrication process is to first fabricate the mandrel structure by the first patterning, then form the spacer on both sides of the mandrel structure, and then remove the mandrel structure and leave the spacer as a mask to etch the underlying material layer not covered by the spacer; or to first fabricate the mandrel structure by the first patterning, then form the spacer on both sides of the mandrel structure, and then form another material layer to fill the remaining gap between the mandrels, and then etch the underlying material layer exposed from the gap by removing the spacer as an etching channel. This process is the SARP fabrication process.

[0063] Please refer to Figures 1 to 7 A patterning method provided for some embodiments of the present application, and specifically comprising the following steps:

[0064] The substrate layer 1, the target layer 2, the transfer layer 3, the first mask layer 4, the anti-reflection layer 5 and the second mask layer 6 are formed in sequence, as shown in Figure 1 . .

[0065] The first mask layer 4 and the transfer layer 3 are patterned according to the pattern of the second mask layer 6 to form a transfer layer pattern and remove the second mask layer 6 and the anti-reflection layer 5, as shown in Figure 2 .

[0066] The remaining transfer layer pattern is trimmed and the first mask layer 4 is removed to form a pattern transfer pattern, i.e. a mandrel 7, as shown in Figure 3 .

[0067] Then, a barrier material layer 8 covering the plurality of mandrels 7 is formed on the target layer 2, as shown in Figure 4 .

[0068] Next, the barrier material layer 8 is etched to form a sidewall 9 on both sides of the mandrel 7, as shown in Figure 5 .

[0069] The mandrel 7 is removed, and a plurality of spaced sidewalls 9 are formed, and a groove is formed between adjacent sidewalls 9, as shown in Figure 6 .

[0070] Finally, the target layer 2 and the substrate layer 1 are etched using the plurality of sidewalls 9 as a mask to form a corresponding pattern, as shown in Figure 7 ; the above is a process method for forming a small-size, high-precision periodic pattern, but the pattern size, e.g. length, obtained by using the process method cannot meet the preparation of lines or grooves of different lengths.

[0071] The embodiment of the present application provides a patterning method, which comprises the following steps:

[0072] A first mask layer is formed on one side of a to-be-etched layer, and a plurality of spaced mandrel structures are formed in the first mask layer, each mandrel structure comprising a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along an extension direction of the mandrel structure.

[0073] A first material layer covering the plurality of mandrel structures is formed on a side of the first mask layer away from the to-be-etched layer.

[0074] The first material layer on the side of the first sub-portion away from the to-be-etched layer is removed, and the first material layer covering the to-be-etched layer on the side close to the first mask layer and located between adjacent first sub-portions along a direction parallel to the to-be-etched layer is removed, so as to form a first sidewall group at opposite two sidewalls of the first sub-portion, and the first sidewall group comprises two first sidewalls located at the sidewalls of the first sub-portion.

[0075] The first sub part is removed to form a first trench between two first sub walls in a first side wall group and a second trench between two adjacent first side wall groups, and the length of the second trench is greater than the length of the first trench.

[0076] A first mask pattern and a second mask pattern are formed on the side of the first mask layer in the first trench and the second trench.

[0077] The first mask pattern and the second mask pattern are used to etch the to-be-etched layer to obtain a first patterned structure and a second patterned structure, and the length of the second patterned structure is greater than the length of the first patterned structure.

[0078] In the embodiment of the present application, after the first material layer is formed, part of the spindle structure is removed to form a first trench with a smaller length and a second trench with a larger length, and the first mask pattern and the second mask pattern are formed by the first trench and the second trench, so as to form the first patterned structure and the second patterned structure with different lengths. Thus, the applicability of the patterning method is improved, and the process difficulty and cost of the fine patterning process for forming patterns with different sizes are reduced, so that the patterning method provided by the present application can meet more process requirements.

[0079] Specifically, please refer to Figure 8 , Figures 9 to 30 In an embodiment of the present application, the patterning method comprises the following steps:

[0080] S10, a to-be-etched layer 10 and a first mask layer 20 located on one side of the to-be-etched layer 10 are formed, and a plurality of spaced spindle structures 21 are formed in the first mask layer 20, and the spindle structure 21 is formed with a first sub part 211 and a second sub part 212 located on at least one side of the first sub part 211 along the extension direction of the spindle structure 21.

[0081] In step S10, first, a second mask layer 40 and a first mask layer 20 are formed on one side of the to-be-etched layer 10, wherein the second mask layer 40 is located between the to-be-etched layer 10 and the first mask layer 20.

[0082] In some embodiments, step S10 further comprises forming an auxiliary mask layer 53 between the to-be-etched layer 10 and the second mask layer 40, forming a first anti-reflection layer 51 between the second mask layer 40 and the first mask layer 20, and forming a second anti-reflection layer 52 on the side of the first mask layer 20 away from the second mask layer 40, as shown in Figure 9 and Figure 10 When the above-mentioned stack structure is in the subsequent etching process, the first anti-reflection layer 51 and the second anti-reflection layer 52 can improve the standing wave effect and the recess effect of the photoresist, and the auxiliary mask layer 53 can improve the film layer topography in the etching process of the to-be-etched layer 10.

[0083] In some embodiments, the material of the layer to be etched 10 can include a metallic material, a semiconductor material or other etchable material; the material of the first mask layer 20, the second mask layer 40 and the auxiliary mask layer 53 can each independently include an oxide material or a nitride material, such as one of plasma enhanced oxide (PEOX), thermal oxide, chemical vapor deposition (CVD) oxide, undoped silicate glass (USG) or high-density plasma (HDP) oxide, or silicon oxynitride (SiON), silicon nitride (SiN), silicon boron nitride (SiBN) or boron nitride (BN); the first anti-reflective layer 51 and the second anti-reflective layer 52 can be composed of a bottom anti-reflective coating (BARC) film.

[0084] Then, a third photoresist layer 63 is formed on the side of the second anti-reflective layer 52 away from the first mask layer 20, and a predetermined pattern is formed in the third photoresist layer 63, such as a plurality of spaced photoresist side walls 631, as shown in Figure 11 and Figure 12 .

[0085] Next, the second anti-reflective layer 52 and the first mask layer 20 are patterned by the third photoresist layer 63 to etch and remove the second anti-reflective layer 52 and the first mask layer 20 not covered by the third photoresist layer 63; and a plurality of spaced mandrel structures 21 can be formed in the first mask layer 20. It can be understood that each mandrel structure 21 has a portion of the second anti-reflective layer 52 covering the side of the mandrel structure 21 away from the first anti-reflective layer 51, as shown in Figure 13 and Figure 14 .

[0086] It should be noted that the plurality of mandrel structures 21 includes a first sub-portion 211 and a second sub-portion 212 connected to at least one side of the mandrel structure 21 along the extension direction of the mandrel structure 21, and the extension direction of the mandrel structure 21 is the direction X.

[0087] S20, forming a first material layer 30 covering the plurality of mandrel structures 21 on the side of the first mask layer 20 away from the layer to be etched 10.

[0088] In step S20, the first material layer 30 is formed on the side of the second anti-reflective layer 52 away from the first anti-reflective layer 51, and the first material layer 30 covers the surface of the second anti-reflective layer 52 away from the first anti-reflective layer 51, the side walls of the plurality of mandrel structures 21 and the adjacent mandrel structures 21, as shown in Figure 15 and Figure 16 .

[0089] In some embodiments, the material of the first material layer 30 comprises an oxide material or a nitride material; and the material of the first material layer 30 can be different from the material of the first mask layer 20 and the second mask layer 40, for example, when the material of the first mask layer 20 and the second mask layer 40 is an oxide material, the material of the first material layer 30 is a nitride material; when the material of the first mask layer 20 and the second mask layer 40 is a nitride material, the material of the first material layer 30 is an oxide material.

[0090] Then, a first photoresist layer 61 is formed on the side of the first material layer 30 away from the second anti-reflective layer 52, and a predetermined pattern is formed in the first photoresist layer 61 to cover part of the underlying film layer. Specifically, the first sub-portion 211 is located outside the coverage range of the first photoresist layer 61, and the second sub-portion 212 and other portions of the first mask layer 20 are located within the coverage range of the first photoresist layer 61, in combination with Figure 14 、 Figure 17 and Figure 18 as shown.

[0091] S30, the first material layer 30 on the side of the first sub-portion 211 away from the to-be-etched layer 10 is removed, and the first material layer 30 located between adjacent first sub-portions 211 and covering the to-be-etched layer 10 on the side close to the first mask layer 20 in a direction parallel to the to-be-etched layer 10 is removed, so as to form a first side wall group 31 at the opposite two side walls of the first sub-portion 211, and the first side wall group 31 comprises two first sub-walls 311 located at the side walls of the first sub-portion 211.

[0092] In step S30, the first material layer 30 is etched by using an anisotropic etching process, i.e., the first material layer 30 extending and covering in a direction parallel to the to-be-etched layer 10 and located outside the coverage range of the first photoresist layer 61 is removed, and the direction parallel to the to-be-etched layer 10 is the direction Y. Specifically, the first material layer 30 on the side of the first sub-portion 211 away from the to-be-etched layer 10 is removed, and the first material layer 30 located between adjacent first sub-portions 211 and covering the to-be-etched layer 10 on the side close to the first mask layer 20 in a direction parallel to the to-be-etched layer 10 is removed, so as to form a first side wall group 31 at the opposite two side walls of the first sub-portion 211, and the first side wall group 31 comprises two first sub-walls 311 located at the side walls of the first sub-portion 211, as shown in Figure 19 and Figure 20 .

[0093] S40, the first sub-portion 211 is removed to form a first groove 310 between the two first sub-walls 311 in the first side wall group 31, and a second groove 320 between adjacent two first side wall groups 31, and the length of the second groove 320 is greater than the length of the first groove 310.

[0094] In step S40, the first photoresist layer 61 is removed first, and then the first sub-part 211 is removed, as follows. Figure 21 and Figure 22 As shown.

[0095] Next, anisotropic etching is performed on the remaining first material layer 30, i.e., the first material layer 30 extending and covering the layer 10 to be etched is removed in a direction parallel to the layer 10 to be etched. Specifically, the first material layer 30 on the side of the second sub-part 212 away from the layer 10 to be etched is removed, as well as the first material layer 30 located between adjacent second sub-parts 212 and covering the side of the layer 10 to be etched near the first mask layer 20 in a direction parallel to the layer 10 to be etched is removed. This allows the formation of a second sidewall group 32 at the opposite sidewalls of the second sub-parts 212, and the second sidewall group 32 includes two second sub-walls 321 located on the sidewalls of the second sub-parts 212, such as... Figure 23 and Figure 24 .

[0096] Then, the second sub-part 212 is removed to form a second trench 320 between adjacent second sidewall assemblies 32, and a first trench 310 between two first sub-walls 311 within the first sidewall assembly 31; and a first anti-reflective layer 51 located on the side of the first mask layer 20 away from the etched layer 10 is retained between the two second sub-walls 321 within the second sidewall assembly 32, such as Figure 24 , Figure 25 and Figure 26 As shown.

[0097] The length of the second groove 320 is greater than the length of the first groove 310. In some embodiments, the length of the second groove 320 may be equal to the length of the mandrel structure 21 along its extension direction, while the length of the first groove 310 may be equal to the length of the first sub-part 211 along the extension direction of the mandrel structure 21.

[0098] It should be noted that the first trench 310 forms between the two first sub-walls 311 within the first sidewall assembly 31, and in Figure 22 and Figure 24 In the corresponding structure, the bottom of the first trench 310 retains the first anti-reflective layer 51; and the second trench 320 is formed between adjacent second sidewall groups 32, and in Figure 22 and Figure 24 In the corresponding structure, the bottom of the second trench 320 also retains the first anti-reflective layer 51.

[0099] Furthermore in Figure 24 The structure shown is to Figure 26In the step of the structure shown, the second sub-portion 212, the first anti-reflective layer 51 at the bottom of the first trench 310, and the first anti-reflective layer 51 at the bottom of the second trench 320 need to be removed; while the first anti-reflective layer 51 at the side of the first mask layer 20 away from the to-be-etched layer 10 is retained between the two second sub-walls 321 in the second side wall group 32, and the first anti-reflective layer 51 is arranged between the first sub-wall 311, the second sub-wall 321, and the second mask layer 40, and the first anti-reflective layer 51 covers the areas other than the first trench 310 and the second trench 320, that is, Figure 26 In the structure shown, only at the first trench 310 and the second trench 320, the surface of the second mask layer 40 away from the to-be-etched layer 10 is exposed.

[0100] S50, forming a first mask pattern 41 and a second mask pattern 42 on the side of the to-be-etched layer 10 where the first mask layer 20 is arranged through the first trench 310 and the second trench 320.

[0101] In step S50, the second mask layer 40 is etched with the first side wall group 31, the second side wall group 32, and the first anti-reflective layer 51 as masks to remove the second mask layer 40 corresponding to the first trench 310 and the second mask layer 40 corresponding to the second trench 320; and then the first mask pattern 41 and the second mask pattern 42 are formed in the second mask layer 40, as shown in Figure 27 and Figure 28

[0102] The first mask pattern 41 can be a first mask groove 411 formed in the second mask layer 40, and the second mask pattern 42 can be a second mask groove 421 formed in the second mask layer 40, and the length of the second mask groove 421 is greater than the length of the first mask groove 411.

[0103] S60, etching the to-be-etched layer 10 with the first mask pattern 41 and the second mask pattern 42 to obtain a first patterned structure 11 and a second patterned structure 12, and the length of the second patterned structure 12 is greater than the length of the first patterned structure 11.

[0104] In step S60, the to-be-etched layer 10 and the auxiliary mask layer 53 are etched with the first mask pattern 41 and the second mask pattern 42 to form the first patterned structure 11 and the second patterned structure 12 in the to-be-etched layer 10, respectively.

[0105] The first patterned structure 11 can be a first groove body 111 formed in the to-be-etched layer 10, and the second patterned structure 12 can be a second groove body 121 formed in the to-be-etched layer 10, as shown in Figure 29 and Figure 30 ​​

[0106] It should be noted that, since the first groove body 111 is formed corresponding to the first mask pattern 41, i.e. corresponding to the first groove 310, and the second groove body 121 is formed corresponding to the second mask pattern 42, i.e. corresponding to the second groove 320, the length of the second groove body 121 is greater than the length of the first groove body 111.

[0107] In some embodiments, the length of the second groove body 121 can be equal to the length of the mandrel structure 21 along its extension direction, and the length of the first groove body 111 can be equal to the length of the first sub-portion 211 along the extension direction of the mandrel structure 21.

[0108] In some embodiments of the present application, the mandrel structure 21 can be partially shielded by setting the first photoresist layer 61, and the first groove 310 with a smaller length and the second groove 320 with a larger length can be formed by removing part of the mandrel structure 21, and the first mask pattern 41 and the second mask pattern 42 can be formed with the first groove 310 and the second groove 320, so as to form the first patterned structure 11 and the second patterned structure 12 with different lengths; thereby the applicability of the patterning method can be improved, and the process difficulty and cost of the fine patterning process for forming different size patterns can be reduced, so that the patterning method provided by the present application can meet more process requirements.

[0109] In addition, please refer to Figure 8 , Figures 31 to 46 In another embodiment of the present application, the patterning method comprises the following steps:

[0110] S10, forming a to-be-etched layer 10 and a first mask layer 20 located on one side of the to-be-etched layer 10, the first mask layer 20 being formed with a plurality of spaced mandrel structures 21, the mandrel structure 21 being formed with a first sub-portion 211 and a second sub-portion 212 located on at least one side of the first sub-portion 211 along the extension direction of the mandrel structure 21.

[0111] In step S10, the to-be-etched layer 10 is first formed, and then the first mask layer 20 is formed on one side of the to-be-etched layer 10, as shown in Figure 31 and Figure 32 .

[0112] In some embodiments, the material of the to-be-etched layer 10 can include a metal material, a semiconductor material or other etchable material; the material of the first mask layer 20 can each independently include an oxide material or a nitride material, for example, one of plasma enhanced oxide (PEOX), thermal oxide, chemical vapor deposition (CVD) oxide, undoped silicate glass (USG) or high-density plasma (HDP) oxide, or silicon oxynitride (SiON), silicon nitride (SiN), silicon boron nitride (SiBN) or boron nitride (BN).

[0113] Then, the first mask layer 20 is etched to form a plurality of spaced mandrel structures 21, the mandrel structure 21 is formed with a first sub-part 211 and a second sub-part 212 located at least one side of the first sub-part 211 along the extension direction of the mandrel structure 21, and the extension direction of the mandrel structure 21 is the direction M, as shown in Figure 33 and Figure 34 .

[0114] S20, forming a first material layer 30 covering the plurality of mandrel structures 21 on the side of the first mask layer 20 away from the layer to be etched 10.

[0115] In step S20, the first material layer 30 is formed on the side of the first mask layer 20 away from the layer to be etched 10, and the first material layer 30 covers the plurality of mandrel structures 21, and can specifically cover the top surface and the side wall of the mandrel structure 21, and cover the area between adjacent mandrel structures 21, as shown in Figure 35 and Figure 36 .

[0116] In some embodiments, the material of the first material layer 30 includes an oxide material or a nitride material; and the material of the first material layer 30 can be different from the material of the first mask layer 20, for example, when the material of the first mask layer 20 is an oxide material, the material of the first material layer 30 is a nitride material, and when the material of the first mask layer 20 is a nitride material, the material of the first material layer 30 is an oxide material.

[0117] A second photoresist layer 62 is formed on the side of the first material layer 30 away from the first mask layer 20, wherein the first sub-part 211 is located outside the coverage range of the second photoresist layer 62, and the second sub-part 212 and other parts of the first material layer 30 are located within the coverage range of the second photoresist layer 62, as shown in Figure 37 and Figure 38 .

[0118] S30, removing the first material layer 30 on the side of the first sub-part 211 away from the layer to be etched 10, and removing the first material layer 30 located between adjacent first sub-parts 211 and covering the side of the layer to be etched 10 close to the first mask layer 20 along the direction parallel to the layer to be etched 10, to form a first side wall group 31 at the opposite two side walls of the first sub-part 211, the first side wall group 31 includes two first sub-walls 311 located on the side wall of the first sub-part 211.

[0119] In step S30, the first material layer 30 is etched by an anisotropic etching process to remove the first material layer 30 away from the side of the layer 10 to be etched of the first sub-section 211, and to remove the first material layer 30 covering the side of the layer 10 to be etched close to the first mask layer 20 between adjacent first sub-sections 211 in a direction parallel to the layer 10 to be etched, i.e. the direction N, and to form a first side wall group 31 at the opposite two side walls of the first sub-section 211, and the first side wall group 31 includes two first sub-walls 311 at the side walls of the first sub-section 211.

[0120] Then, the second photoresist layer 62 is removed.

[0121] S40, the first sub-section 211 is removed to form a first trench 310 between the two first sub-walls 311 in the first side wall group 31, and a second trench 320 between adjacent first side wall groups 31, and the length of the second trench 320 is greater than the length of the first trench 310.

[0122] In step S40, the first sub-section 211 is removed to form a first trench 310 between the two first sub-walls 311 in the first side wall group 31, and a second trench 320 between adjacent first side wall groups 31, as shown in Figure 39 and Figure 40 .

[0123] It can be understood that the length of the second trench 320 is greater than the length of the first trench 310, and in some embodiments, the length of the second trench 320 can be equal to the length of the mandrel structure 21 in the direction of its extension, and the length of the first trench 310 can be equal to the length of the first sub-section 211 in the direction of the extension of the mandrel structure 21.

[0124] It should be noted that the first material layer 30 covers the second sub-section 212 and forms a third side wall group 33 at the opposite two side walls of the second sub-section 212, and the third side wall group 33 includes two third sub-walls 331 at the side walls of the second sub-section 212, and the second trench 320 is also formed between adjacent third side wall groups 33; in addition, the first material layer 30 also forms a spacer 34 between adjacent third side wall groups 33 in the second trench 320.

[0125] S50, the first mask pattern 41 and the second mask pattern 42 are formed in the layer 10 to be etched on the side of the layer 10 to be etched provided with the first mask layer 20 through the first trench 310 and the second trench 320, respectively.

[0126] In step S50, a first mask pattern 41 and a second mask pattern 42 are formed in the first trench 310 and the second trench 320, respectively. Specifically, the first mask pattern 41 can be a first mask sidewall 412 formed in the first trench 310, and the second mask pattern 42 can be a second mask sidewall 422 formed in the second trench 320, and the length of the second mask sidewall 422 is greater than the length of the first mask sidewall 412, as shown in Figure 41 and Figure 42 .

[0127] It should be noted that in the second trench 320, the second mask sidewall 422 between adjacent first sidewall groups 31 covers the to-be-etched layer 10, and the second mask sidewall 422 between adjacent third sidewall groups 33 covers the spacer 34.

[0128] Then, the first material layer 30 except the spacer 34 is removed to form the first mask sidewall 412 and the second mask sidewall 422 arranged at intervals on the to-be-etched layer 10, as shown in Figure 43 and Figure 44 .

[0129] In step S60, the to-be-etched layer 10 is etched by using the first mask pattern 41 and the second mask pattern 42 to obtain a first patterned structure 11 and a second patterned structure 12, and the length of the second patterned structure 12 is greater than the length of the first patterned structure 11.

[0130] In step S60, the to-be-etched layer 10 not covered by the first mask sidewall 412 and the second mask sidewall 422 is removed to form the first patterned structure 11 and the second patterned structure 12, respectively. The first patterned structure 11 is a first wire 112 formed corresponding to the first mask sidewall 412, and the second patterned structure 12 is a second wire 122 formed corresponding to the second mask sidewall 422, as shown in Figure 45 and Figure 46 .

[0131] It should be noted that the length of the second wire 122 is greater than the length of the first wire 112. Since the first wire 112 is formed corresponding to the first mask sidewall 412, that is, the first wire 112 is formed corresponding to the first trench 310. The second wire 122 is formed corresponding to the second mask sidewall 422, that is, the second wire 122 is formed corresponding to the second trench 320. In some embodiments, the length of the second wire 122 can be equal to the length of the mandrel structure 21 along the extension direction thereof, and the length of the first wire 112 can be equal to the length of the first sub-portion 211 along the extension direction of the mandrel structure 21.

[0132] In some embodiments of the present application, the mandrel structure 21 can be partially shielded by setting the second photoresist layer 62, and by removing part of the mandrel structure 21 to form the first groove 310 with a smaller length and the second groove 320 with a larger length, and the first groove 310 and the second groove 320 can be used to form the first mask pattern 41 and the second mask pattern 42, so as to form the first patterned structure 11 and the second patterned structure 12 with different lengths. In this way, the applicability of the patterning method can be improved, and the process difficulty and cost of the fine patterning process for forming patterns with different sizes can be reduced, so that the patterning method provided by the present application can meet more process requirements.

[0133] It should be noted that the patterning scheme described in the above embodiments can be used to manufacture patterned structures with different lengths, such as groove bodies or traces. In the groove bodies or traces with different lengths, they can be a plurality of groove bodies or a plurality of traces with one end aligned or one end misaligned, or a plurality of groove bodies or a plurality of traces with both ends misaligned. When the second sub-portion 212 is connected to one side of the first sub-portion 211 along the extension direction of the mandrel structure 21, the above patterning method can form a plurality of groove bodies or a plurality of traces with one end aligned or one end misaligned. When the second sub-portion 212 is connected to opposite sides of the first sub-portion 211 along the extension direction of the mandrel structure 21, the above patterning method can form a plurality of groove bodies or a plurality of traces with both ends misaligned.

[0134] In addition, the present application also provides a semiconductor structure manufactured by the patterning method described in the above embodiments.

[0135] In some embodiments, referring to Figure 47 the semiconductor structure is provided with the first groove body 111 and the second groove body 121, and the length of the second groove body 121 is greater than the length of the first groove body 111. The first groove body 111 and the second groove body 121 can be manufactured by the patterning method described in the above embodiments to form the first patterned structure 11 and the second patterned structure 12, respectively.

[0136] In some embodiments, referring to Figure 48 the semiconductor structure is provided with the first trace 112 and the second trace 122, and the length of the second trace 122 is greater than the length of the first trace 112. The first trace 112 and the second trace 122 can be manufactured by the patterning method described in the above embodiments to form the first patterned structure 11 and the second patterned structure 12, respectively.

[0137] Further, the present application also provides a memory and a storage system, and the memory includes the semiconductor structure described in the above embodiments.

[0138] The storage system includes the semiconductor structure described above, please refer to Figure 49 The storage system includes a memory 72 and a controller 71 coupled to the memory 72 and configured to control the memory 72 to store data, and the memory 72 is a memory manufactured by the manufacturing method of the memory described in the above embodiments or the memory described in the above embodiments.

[0139] Specifically, the controller 71 can control the memory 72 through a channel CH, and the memory 72 can perform operations based on the control of the controller 71 in response to a request from a host 80. The memory 72 can receive a command CMD and an address ADDR from the controller 71 through the channel CH and access a region selected from a storage array in response to the address. In other words, the memory 72 can perform an internal operation corresponding to the command on the region selected by the address.

[0140] In some embodiments, the storage system can be implemented as a storage device including but not limited to a universal flash storage (UFS) device, a solid state drive (SSD), a multimedia card in the form of an MMC, an eMMC, an RS-MMC, and a micro- MMC, a secure digital card in the form of an SD, a mini-SD, and a micro-SD, a personal computer memory card international association (PCMCIA) card type storage device, a peripheral component interconnect (PCI) type storage device, a high-speed PCI (PCI-E) type storage device, a compact flash (CF) card, a smart media card, or a memory stick, etc.

[0141] Specifically, the storage system described above can be used in terminal products such as computers, televisions, set-top boxes, vehicles, etc.

[0142] Further, some embodiments of the present application also provide an electronic device including the storage system provided by the embodiments of the present application. Specifically, the electronic device can include but is not limited to any device that can store data, such as a mobile phone, a desktop computer, a tablet computer, a notebook computer, a server, a vehicle-mounted device, a wearable device, a mobile power supply, etc.

[0143] The electronic device provided by some embodiments of the present application has the same beneficial effects as the storage system described above due to the storage system provided by some embodiments of the present application.

[0144] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0145] The above describes in detail the patterned method, the semiconductor structure and the memory provided by the embodiments of the present application. The principles and implementation manners of the present application are described by using specific examples. The above embodiment description is only used to help understand the technical solutions of the present application and the core ideas thereof. Those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features thereof can be replaced equivalently, and the modification or replacement does not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method of patterning, characterized by, The method comprises the following steps: forming a to-be-etched layer and a first mask layer on one side of the to-be-etched layer, the first mask layer comprising a plurality of spaced mandrel structures, each mandrel structure comprising a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along the extension direction of the mandrel structure; forming a first material layer covering the plurality of mandrel structures on the side of the first mask layer away from the to-be-etched layer; removing the first material layer on the side of the first sub-portion away from the to-be-etched layer, and removing the first material layer located between adjacent first sub-portions and covering the to-be-etched layer on the side close to the first mask layer along a direction parallel to the to-be-etched layer, so as to form a first sidewall group on the opposite sidewalls of the first sub-portion, the first sidewall group comprising two first sub-walls located on the sidewalls of the first sub-portion; removing the first sub-portion to form a first trench between the two first sub-walls in the first sidewall group, and a second trench between two adjacent first sidewall groups, the length of the second trench being greater than the length of the first trench; forming a first mask pattern and a second mask pattern on the to-be-etched layer through the first trench and the second trench respectively; etching the to-be-etched layer using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure, the length of the second patterned structure being greater than the length of the first patterned structure.

2. The patterning process of claim 1, wherein, The step of forming the to-be-etched layer and the first mask layer on one side of the to-be-etched layer further comprises: forming a second mask layer on one side of the to-be-etched layer and a first antireflection layer on the side of the first antireflection layer away from the second mask layer; forming the first mask layer on the side of the first antireflection layer away from the second mask layer, and performing a patterning process on the first mask layer to form a plurality of spaced mandrel structures.

3. The patterning process of claim 2, wherein, The step of forming the first material layer covering the plurality of mandrel structures on the side of the first mask layer away from the to-be-etched layer further comprises: forming the first material layer covering the plurality of mandrel structures on the side of the first mask layer away from the first antireflection layer; forming a first photoresist layer on the side of the first material layer away from the first mask layer, the first sub-portion being located outside the coverage range of the first photoresist layer, and the second sub-portion being located within the coverage range of the first photoresist layer.

4. The patterning process of claim 3, wherein, The step of removing the first sub-portion further comprises: removing the first photoresist layer; removing the first sub-portion, and the first antireflection layer remaining at the bottom of the first trench and the bottom of the second trench; The first material layer on the side of the second sub-part away from the layer to be etched is removed, and the first material layer located between adjacent second sub-parts and covering the side of the layer to be etched near the first mask layer in a direction parallel to the layer to be etched is removed, so as to form a second sidewall group at the opposite sidewalls of the second sub-parts, the second sidewall group including two second sub-walls located on the sidewalls of the second sub-parts, and the second trench is also located between adjacent second sidewall groups.

5. The method of claim 4, wherein, The steps of removing the first material layer on the side of the second sub-part away from the layer to be etched, and removing the first material layer located between adjacent second sub-parts and covering the side of the layer to be etched near the first mask layer in a direction parallel to the layer to be etched, further include: Remove the second sub-part, the first anti-reflective layer located at the bottom of the first trench, and the first anti-reflective layer located at the bottom of the second trench, and leave the first anti-reflective layer located on the side of the second mask layer away from the layer to be etched between the two second sub-walls in the second sidewall group.

6. The method of claim 5, wherein, The step of forming a first mask pattern and a second mask pattern on the side of the layer to be etched where the first mask layer is provided through the first trench and the second trench further includes: Remove the second mask layer that aligns with the first trench to form a first mask groove in the second mask layer; remove the second mask layer that aligns with the second trench to form a second mask groove in the second mask layer, and the length of the second mask groove is greater than the length of the first mask groove. The first mask pattern includes the first mask groove, and the second mask pattern includes the second mask groove.

7. The method of claim 6, wherein, The step of etching the layer to be etched using the first mask pattern and the second mask pattern to obtain the first patterned structure and the second patterned structure further includes: At least a portion of the layer to be etched that aligns with the first mask groove is removed to form a first groove in the layer to be etched; at least a portion of the layer to be etched that aligns with the second mask groove is removed to form a second groove in the layer to be etched, wherein the length of the second groove is greater than the length of the first groove. The first patterned structure includes the first groove, and the second patterned structure includes the second groove.

8. The method of claim 1, wherein, The step of forming a first material layer covering the plurality of mandrel structures on the side of the first mask layer away from the layer to be etched further includes: A second photoresist layer is formed on the side of the first material layer away from the first mask layer, and the first sub-part is located outside the coverage area of ​​the second photoresist layer, while the second sub-part is located within the coverage area of ​​the second photoresist layer.

9. The method of claim 8, wherein, The step of removing the first sub-part includes: removing the second photoresist layer to form third sidewall groups at opposite sidewalls of the second sub-portion, each of the third sidewall groups including two third sub-walls at the sidewalls of the second sub-portion, and the second trench being formed between adjacent two of the third sidewall groups, the first material layer further including a spacer portion at the bottom of the second trench and between the adjacent third sidewall groups; removing the first sub-portion to form the first trench between the two first sub-walls of the first sidewall group, and the second trench being formed between adjacent two of the first sidewall groups.

10. The patterning process of claim 9, wherein, The step of forming the first mask pattern and the second mask pattern in the first trench and the second trench, respectively, further includes: forming a first mask sidewall in the first trench and a second mask sidewall in the second trench, and the second mask sidewall covering the spacer portion away from the to-be-etched layer between the adjacent third sidewall groups; removing the first material layer except the spacer portion; wherein the first mask pattern includes the first mask sidewall, and the second mask pattern includes the second mask sidewall.

11. The method of claim 10, wherein, The step of etching the to-be-etched layer using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure further includes: removing the to-be-etched layer not covered by the first mask sidewall and removing the to-be-etched layer not covered by the second mask sidewall to form a first trace and a second trace, respectively, and the length of the second trace being greater than the length of the first trace; wherein the first patterned structure includes the first trace, and the second patterned structure includes the second trace.

12. The method of claim 1, wherein, In the step of forming the first material layer covering the plurality of the mandrel structures on the side of the first mask layer away from the to-be-etched layer: the second sub-portion is connected to the first sub-portion along the extension direction of the mandrel structures, and the second sub-portion is connected to one side of the first sub-portion, or the second sub-portion is connected to opposite sides of the first sub-portion.

13. The method of claim 1, wherein The material of the first mask layer includes an oxide material or a nitride material, and the material of the first material layer includes an oxide material or a nitride material.

14. A semiconductor structure, characterized by The semiconductor structure includes a first groove and a second groove, the length of the second groove being greater than the length of the first groove, and the first groove and the second groove being formed by the first patterned structure and the second patterned structure obtained by the patterning method of any one of claims 1 to 7, 12, and 13.

15. A semiconductor structure, characterized by The semiconductor structure includes a first trace and a second trace, the length of the second trace being greater than the length of the first trace, and the first trace and the second trace being formed by the first patterned structure and the second patterned structure obtained by the patterning method of any one of claims 1, 8 to 13.

16. A memory, comprising: The memory includes the semiconductor structure of claim 14 or 15.

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