Bridge arm, half bridge, power module and vehicle

Abstract

The invention provides a bridge arm, a half bridge, a power module and a vehicle, and the bridge arm comprises a plurality of first semiconductor switches; a plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along the symmetric axis; the first end and the second end of the metal sheet are symmetrically distributed along the symmetry axis, the third end of the metal sheet is located on the symmetry axis, the first end of the metal sheet is connected with the transmitting ends of the multiple first semiconductor switches, and the second end of the metal sheet is connected with the transmitting ends of the multiple second semiconductor switches. According to the bridge arm, the half bridge, the power module and the vehicle disclosed by the invention, current sharing between the first semiconductor switch and the second semiconductor switch which are symmetrically distributed along the symmetric axis is realized; therefore, loss difference, current and voltage stress difference and switching speed difference between the first semiconductor switch and the second semiconductor switch are reduced.

Description

Technical Field

[0001] The present disclosure relates to the technical field of power modules, and in particular to a bridge arm, a half bridge, a power module and a vehicle. Background Art

[0002] A power module, also called an inverter module, is a device that converts direct current into alternating current. It is widely used in the industrial field. In order to achieve high output power, the power module needs to utilize multiple semiconductor switches in parallel to accommodate larger currents. Multiple semiconductor switches are usually connected in parallel using bonding wires, but it is difficult to achieve current sharing between semiconductor switches by adjusting the wire length using bonding wires. Uneven current sharing between semiconductor switches will lead to differences in losses, current and voltage stresses, and switching speeds. Such differences may cause a single semiconductor switch to be damaged due to excessive stress for a long time or the current capacity of the semiconductor switch may not be fully utilized. Summary of the invention

[0003] The present disclosure aims to solve one of the technical problems in the related art at least to some extent.

[0004] To this end, an object of the present disclosure is to provide a bridge arm, a half bridge, a power module and a vehicle.

[0005] To achieve the above-mentioned purpose, the first aspect of the present disclosure provides a bridge arm, comprising: a plurality of first semiconductor switches; a plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a symmetry axis; a metal sheet, wherein the first end and the second end of the metal sheet are symmetrically distributed along the symmetry axis, and the third end of the metal sheet is located on the symmetry axis, the first end of the metal sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, and the second end of the metal sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches.

[0006] Optionally, the bridge arm also includes: a first metal layer, which is symmetrically distributed along the symmetry axis; a second metal layer, which is symmetrically distributed along the symmetry axis, and the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer; wherein the second metal layer is provided with a first avoidance opening at the symmetry axis, one end of the first metal layer extends into the first avoidance opening and is connected to the third end of the metal sheet, and a first gap is provided between the first metal layer and the second metal layer.

[0007] Optionally, the second metal layer includes: a first part, the first semiconductor switch is arranged on the first part, and the collector end of the first semiconductor switch is connected to the first part; a second part, the second semiconductor switch is arranged on the second part, and the collector end of the second semiconductor switch is connected to the second part; wherein the first part and the second part are symmetrically distributed along the symmetry axis, and the first avoidance is formed between the first part and the second part.

[0008] Optionally, the first metal layer includes: a third part, which is symmetrically distributed along the symmetry axis, the third part is arranged in the first avoidance and connected to the third end of the metal sheet; and a fourth part, which is symmetrically distributed along the symmetry axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

[0009] Optionally, a second avoidance opening is provided at one end of the second metal layer away from the second semiconductor switch, and a third avoidance opening is provided at one end of the second metal layer away from the first semiconductor switch; the bridge arm also includes: a third metal layer and a fourth metal layer, the third metal layer is provided in the second avoidance opening, and a second gap is provided between the third metal layer and the second metal layer, the third metal layer is respectively connected to the control ends of multiple first semiconductor switches, the fourth metal layer is provided in the third avoidance opening, and a third gap is provided between the fourth metal layer and the second metal layer, and the fourth metal layer is respectively connected to the control ends of multiple second semiconductor switches.

[0010] Optionally, the bridge arm also includes: a first pin, which is arranged at an end of the third metal layer away from the second metal layer, and the first pin is connected to the third metal layer; a second pin, which is arranged at an end of the fourth metal layer away from the second metal layer, and the second pin is connected to the fourth metal layer; wherein the first pin and the second pin are symmetrically distributed along the symmetry axis.

[0011] Optionally, the bridge arm also includes: a plurality of first binding wires, the first binding wires are arranged along a direction perpendicular to the axis of symmetry, the first end of the first binding wires is connected to the third metal layer, and the second end of the first binding wires is connected to the control end of the first semiconductor switch; a plurality of second binding wires, the second binding wires are arranged along a direction perpendicular to the axis of symmetry, the first end of the second binding wires is connected to the fourth metal layer, and the second end of the second binding wires is connected to the control end of the second semiconductor switch; a third wire, the third wire is arranged along a direction perpendicular to the axis of symmetry, the first end of the third wire is connected to the third metal layer, and the second end of the third wire is connected to the first pin; a fourth wire, the fourth wire is arranged along a direction perpendicular to the axis of symmetry, the first end of the fourth wire is connected to the fourth metal layer, and the second end of the fourth wire is connected to the second pin.

[0012] Optionally, the bridge arm further includes: an insulating substrate, the insulating substrate is symmetrically distributed along the symmetry axis, and the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are respectively arranged on the insulating substrate.

[0013] Optionally, the bridge arm also includes: a third pin, which is arranged at an end of the second metal layer away from the second semiconductor switch, and the third pin is connected to the transmitting end of the first semiconductor switch; a fourth pin, which is arranged at an end of the second metal layer away from the first semiconductor switch, and the fourth pin is connected to the transmitting end of the second semiconductor switch; wherein the third pin and the fourth pin are symmetrically distributed along the symmetry axis.

[0014] Optionally, the bridge arm also includes: a fifth wire, which is arranged in a direction perpendicular to the symmetry axis, the first end of the fifth wire is connected to the emitter end of the first semiconductor switch, and the second end of the fifth wire is connected to the third pin; a sixth wire, which is arranged in a direction perpendicular to the symmetry axis, the first end of the sixth wire is connected to the emitter end of the second semiconductor switch, and the second end of the sixth wire is connected to the fourth pin.

[0015] Optionally, the multiple first semiconductor switches include: a first switch, which is arranged on the second metal layer, and the collector end of the first switch is connected to the second metal layer, and the emitter end of the first switch is connected to the first end of the metal sheet; a second switch, which is arranged on the second metal layer, and the collector end of the second switch is connected to the second metal layer, and the emitter end of the second switch is connected to the first end of the metal sheet; a third switch, which is arranged on the second metal layer, and the collector end of the third switch is connected to the second metal layer, and the emitter end of the third switch is connected to the first end of the metal sheet; wherein the first switch, the second switch and the third switch are not aligned axially along the symmetry axis.

[0016] Optionally, the first end of the metal sheet includes: a first connecting sheet, which is connected to the transmitting end of the first switch; a second connecting sheet, which is connected to the transmitting end of the second switch; and a third connecting sheet, which is connected to the transmitting end of the third switch; wherein a first notch is formed between the first connecting sheet and the second connecting sheet, and a second notch is formed between the second connecting sheet and the third connecting sheet.

[0017] Optionally, the distance between the first switch and the axis of symmetry is greater than the distance between the second switch and the axis of symmetry, and the distance between the second switch and the axis of symmetry is greater than the distance between the third switch and the axis of symmetry; a third notch is provided on a side of the metal sheet close to the first switch, a fourth notch is provided in the third notch, and the third notch and the fourth notch are symmetrically distributed along the axis of symmetry; the distance between the first notch and the axis of symmetry is greater than the distance between the second notch and the axis of symmetry.

[0018] Optionally, the bridge arm also includes: a first metal row, the first metal row is arranged axially along the symmetry axis, and the first end of the first metal row is connected to the first metal layer; a second metal row, the second metal row is arranged axially along the symmetry axis, and the first end of the second metal row is connected to the second metal layer.

[0019] Optionally, the metal sheet has a positive projection on the first metal row and / or the second metal row; the distance between the first switch and the axis of symmetry is smaller than the distance between the third switch and the axis of symmetry, and the distance between the third switch and the axis of symmetry is smaller than the distance between the second switch and the axis of symmetry; a fifth notch is provided on a side of the metal sheet close to the first switch, a sixth notch is provided on a side of the metal sheet close to the third switch, a seventh notch is provided in the sixth notch, and the fifth notch, the sixth notch and the seventh notch are symmetrically distributed along the axis of symmetry; the distance between the first notch and the axis of symmetry is equal to the distance between the second notch and the axis of symmetry.

[0020] Optionally, the metal sheet includes: a first planar sheet, a second planar sheet, a third planar sheet, a first arc-shaped sheet and a second arc-shaped sheet, the first planar sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, the second planar sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches, the first planar sheet and the second planar sheet are symmetrically distributed along the symmetry axis, the third planar sheet is located on the symmetry axis, the first arc-shaped sheet is arranged between the third planar sheet and the first planar sheet, the second arc-shaped sheet is arranged between the third planar sheet and the second planar sheet, and the first arc-shaped sheet and the second arc-shaped sheet are symmetrically distributed along the symmetry axis.

[0021] The second aspect of the present disclosure provides a half bridge, comprising: an upper bridge arm, which is the bridge arm provided in the first aspect of the present disclosure; and a lower bridge arm, which is the bridge arm provided in the first aspect of the present disclosure; wherein the metal sheet of the upper bridge arm is respectively connected to the first semiconductor switch collector terminal and the second semiconductor switch collector terminal of the lower bridge arm.

[0022] Optionally, the second metal row of the upper bridge arm and the first metal row of the lower bridge arm are arranged close to and in parallel with each other, and a current direction of the second metal row of the upper bridge arm is opposite to a current direction of the first metal row of the lower bridge arm.

[0023] Optionally, the fourth notch of the upper bridge arm and the seventh notch of the lower bridge arm are arranged opposite to each other, and a size of the fourth notch of the upper bridge arm is different from a size of the seventh notch of the lower bridge arm.

[0024] Optionally, the insulating substrate of the upper bridge arm is connected to the insulating substrate of the lower bridge arm, and the first metal layer of the upper bridge arm is connected to the second metal layer of the lower bridge arm.

[0025] A third aspect of the present disclosure provides a power module, comprising: a half bridge as provided in the second aspect of the present disclosure.

[0026] A fourth aspect of the present disclosure provides a vehicle, comprising: a power module as provided in the third aspect of the present disclosure.

[0027] The present disclosure provides a bridge arm. The bridge arm includes a plurality of first semiconductor switches, a plurality of second semiconductor switches and a metal sheet; the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a symmetric axis; the first end and the second end of the metal sheet are symmetrically distributed along the symmetric axis, and the third end of the metal sheet is located on the symmetric axis, the first end of the metal sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, and the second end of the metal sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches. Since the first end and the second end of the metal sheet are symmetrically distributed along the symmetric axis, and the third end of the metal sheet is located on the symmetric axis, the current path length between the first semiconductor switch and the third end of the metal sheet and the current path length between the second semiconductor switch and the third end of the metal sheet are equal to the current path length between the first semiconductor switch and the second semiconductor switch symmetrically distributed along the symmetric axis. Thus, current sharing between the first semiconductor switch and the second semiconductor switch symmetrically distributed along the symmetric axis is achieved, thereby reducing the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the first semiconductor switch and the second semiconductor switch, thereby reducing the problem of damage of the first semiconductor switch or the second semiconductor switch due to excessive stress for a long time and the problem that the current capacity of the first semiconductor switch or the second semiconductor switch cannot be fully utilized.

[0028] Additional aspects and advantages of the present disclosure will be given in part in the following description and in part will be obvious from the following description or learned through practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and / or additional aspects and advantages of the present disclosure will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0030] Figure 1 is a top view of a half bridge proposed in one embodiment of the present disclosure;

[0031] Figure 2 is a top view of a half bridge proposed in one embodiment of the present disclosure;

[0032] Figure 3 is a top view of a half bridge proposed in one embodiment of the present disclosure;

[0033] Figure 4 is a top view of a metal sheet in a bridge arm according to an embodiment of the present disclosure;

[0034] Figure 5 is a top view of a metal sheet in a bridge arm according to an embodiment of the present disclosure;

[0035] Figure 6 is a right side view of a half bridge proposed in one embodiment of the present disclosure;

[0036] As shown in the figure: 1, insulating substrate, 101, symmetry axis, 102, first metal layer, 103, second metal layer, 104, third metal layer, 105, fourth metal layer, 106, first gap, 107, second gap, 108, third gap;

[0037] 1021, Part III, 1022, Part IV;

[0038] 1031, first part, 1032, second part, 1033, first avoidance, 1034, second avoidance, 1035, third avoidance;

[0039] 2. First semiconductor switch, 201. First switch, 202. Second switch, 203. Third switch;

[0040] 3. A second semiconductor switch;

[0041] 4. Metal sheet, 401. First connecting sheet, 402. Second connecting sheet, 403. Third connecting sheet, 404. First notch, 405. Second notch, 406. Third notch, 407. Fourth notch, 408. Fifth notch, 409. Sixth notch, 410. Seventh notch, 411. First planar sheet, 412. Second planar sheet, 413. Third planar sheet, 414. First arc-shaped sheet, 415. Second arc-shaped sheet;

[0042] 5. first pin, 6. second pin, 7. first metal row, 8. second metal row, 9. first binding wire, 10. second binding wire, 11. third wire, 12. fourth wire, 13. third pin, 14. fifth wire, 15. fourth pin, 16. sixth wire;

[0043] 17. Upper bridge arm, 18. Lower bridge arm. DETAILED DESCRIPTION

[0044] In order to more clearly understand the above-mentioned objectives, features and advantages of the present disclosure, the scheme of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0045] In the following description, many specific details are set forth to facilitate a full understanding of the present disclosure, but the present disclosure may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0046] like Figure 1 , Figure 2 , Figure 3 and Figure 6As shown, an embodiment of the present disclosure proposes a bridge arm, comprising a plurality of first semiconductor switches 2, a plurality of second semiconductor switches 3 and a metal sheet 4, wherein the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 are symmetrically distributed along a symmetry axis 101, the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, and the third end of the metal sheet 4 is located on the symmetry axis 101, the first end of the metal sheet 4 is respectively connected to the transmitting ends of the plurality of first semiconductor switches 2, and the second end of the metal sheet 4 is respectively connected to the transmitting ends of the plurality of second semiconductor switches 3.

[0047] It can be understood that since the first end of the metal sheet 4 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second end of the metal sheet 4 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, when the third end of the metal sheet 4 is used as a current output, parallel connection can be achieved between multiple first semiconductor switches 2, between multiple second semiconductor switches 3, and between the first semiconductor switch 2 and the second semiconductor switch 3. Therefore, based on the principle of parallel shunt, the bridge arm can utilize a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving a high output power of the bridge arm.

[0048] Moreover, since the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, and the third end of the metal sheet 4 is located on the symmetry axis 101, the current path length between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, and between the first semiconductor switch 2 and the third end of the metal sheet 4 are equal to the current path length between the second semiconductor switch 3 and the third end of the metal sheet 4. Thus, current sharing between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101 is achieved, thereby reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage of the first semiconductor switch 2 or the second semiconductor switch 3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0049] Among them, the sheet-like metal sheet 4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage, thereby eliminating the need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can fully exert its advantage of high switching speed.

[0050] Moreover, the sheet-like metal sheet 4 has higher structural stability than the linear bonding wire, so that the metal sheet 4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the metal sheet 4, thereby achieving current balancing.

[0051] It should be noted that the parasitic inductance of the bridge arm is related to the length of the current path therein and the cross-sectional area of ​​the conductor. The longer the current path is, the larger the parasitic inductance of the bridge arm is. Conversely, the shorter the current path is, the smaller the parasitic inductance of the bridge arm is. At the same time, the larger the cross-sectional area of ​​the conductor is, the smaller the parasitic inductance of the bridge arm is. Conversely, the smaller the cross-sectional area of ​​the conductor is, the larger the parasitic inductance of the bridge arm is. Therefore, after the relative positions of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 are determined, the length of the current path between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 is also determined. At the same time, since the cross-section of the metal sheet 4 is a long strip structure and the cross-section of the bonding wire is a circular structure, considering the overall volume of the bridge arm, the cross-sectional area of ​​the metal sheet 4 can be set larger. Therefore, the method of using the metal sheet 4 to realize the parallel connection of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can reduce the parasitic inductance of the bridge arm.

[0052] The first semiconductor switch 2 and the second semiconductor switch 3 are both semiconductor switches. The specific types of the first semiconductor switch 2 and the second semiconductor switch 3 can be set according to actual needs, and there is no limitation on this. For example, the first semiconductor switch 2 and the second semiconductor switch 3 can both be silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFET), also known as SiCMOSFET, wherein the emitter of the first semiconductor switch 2 and the second semiconductor switch 3 is the source, the collector of the first semiconductor switch 2 and the second semiconductor switch 3 is the drain, and the control of the first semiconductor switch 2 and the second semiconductor switch 3 is the gate. The first semiconductor switch 2 and the second semiconductor switch 3 can both be insulated gate bipolar transistors (IGBT), wherein the emitter of the first semiconductor switch 2 and the second semiconductor switch 3 is the emitter, the collector of the first semiconductor switch 2 and the second semiconductor switch 3 is the collector, and the control of the first semiconductor switch 2 and the second semiconductor switch 3 is the gate.

[0053] Since the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 are symmetrically distributed along the symmetry axis 101, the numbers of the first semiconductor switches 2 and the second semiconductor switches 3 correspond one to one, wherein the specific numbers of the first semiconductor switches 2 and the second semiconductor switches 3 can be set according to actual needs and are not limited to this. For example, the numbers of the first semiconductor switches 2 and the second semiconductor switches 3 can be two, three, four, five, etc.

[0054] The metal sheet 4 is used for parallel connection between multiple first semiconductor switches 2, between multiple second semiconductor switches 3, and between the first semiconductor switch 2 and the second semiconductor switch 3. The specific type of the metal sheet 4 can be set according to actual needs and is not limited to this. For example, the metal sheet 4 can be a copper sheet.

[0055] like Figure 1 , Figure 2 , Figure 3 and Figure 6 As shown, in some embodiments, the bridge arm also includes a first metal layer 102 and a second metal layer 103, the first metal layer 102 is symmetrically distributed along the symmetry axis 101, the second metal layer 103 is symmetrically distributed along the symmetry axis 101, the first semiconductor switch 2 and the second semiconductor switch 3 are respectively arranged on the second metal layer 103, and the collector end of the first semiconductor switch 2 and the collector end of the first semiconductor switch 2 are respectively connected to the second metal layer 103, wherein the second metal layer 103 is provided with a first avoidance opening 1033 at the symmetry axis 101, one end of the first metal layer 102 extends into the first avoidance opening 1033 and is connected to the third end of the metal sheet 4, and a first gap 106 is provided between the first metal layer 102 and the second metal layer 103.

[0056] It can be understood that, since the first end of the metal sheet 4 is respectively connected to the transmitting ends of the multiple first semiconductor switches 2, the second end of the metal sheet 4 is respectively connected to the transmitting ends of the multiple second semiconductor switches 3, and the third end of the metal sheet 4 is connected to the first metal layer 102, the transmitting ends of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can use the first metal layer 102 to output current after being connected in parallel. At the same time, since the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 are respectively connected to the second metal layer 103, the collector end of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can use the second metal layer 103 to input current after being connected in parallel. As a result, the first metal layer 102 and the second metal layer 103 can be used as the output end and the input end of the bridge arm respectively, ensuring that the unidirectional conduction or bidirectional conduction function of the bridge arm is realized.

[0057] Among them, since the first metal layer 102 is symmetrically distributed along the symmetry axis 101, and the second metal layer 103 is symmetrically distributed along the symmetry axis 101, when the emitters of the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 use the first metal layer 102 to output current, and when the collectors of the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 use the second metal layer 103 to input current, the current path lengths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby achieving current sharing between the first semiconductor switches 2 and the second semiconductor switches 3, thereby further reducing the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage of the first semiconductor switch 2 or the second semiconductor switch 3 due to excessive stress for a long time and the problem of the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 not being able to be fully utilized.

[0058] In addition, the setting of the first avoidance opening 1033 facilitates the connection between the first metal layer 102 and the third end of the metal sheet 4, and the setting of the first gap 106 ensures the independence between the first metal layer 102 and the second metal layer 103, thereby reducing the interference problem between the first metal layer 102 and the second metal layer 103, thereby ensuring the stable operation of the bridge arm.

[0059] It should be noted that since the first avoidance opening 1033 is arranged on the second metal layer 103 at the symmetry axis 101, and the first metal layer 102 is symmetrically distributed along the symmetry axis 101, and the second metal layer 103 is symmetrically distributed along the symmetry axis 101, the first metal layer 102 is located on the inner side of the second metal layer 103. At the same time, since the third end of the metal sheet 4 is located on the symmetry axis 101, and the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, the middle part of the metal sheet 4 is connected to the first metal layer 102, and the two ends of the metal sheet 4 are respectively connected to the first semiconductor switch 2 and the second semiconductor switch 3.

[0060] When the emitter ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 use the first metal layer 102 to output current, and the collector ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 use the second metal layer 103 to input current, the second metal layer 103, the first semiconductor switches 2, and the first metal layer 102 constitute a first current path, the second metal layer 103, the second semiconductor switches 3, and the first metal layer 102 constitute a second current path, and the first current loop and the second current loop are connected in parallel.

[0061] The specific types of the first metal layer 102 and the second metal layer 103 can be set according to actual needs and are not limited thereto.

[0062] like Figure 2 As shown, in some embodiments, the second metal layer 103 includes a first part 1031 and a second part 1032, the first semiconductor switch 2 is arranged on the first part 1031, and the collector end of the first semiconductor switch 2 is connected to the first part 1031, the second semiconductor switch 3 is arranged on the second part 1032, and the collector end of the second semiconductor switch 3 is connected to the second part 1032, wherein the first part 1031 and the second part 1032 are symmetrically distributed along the symmetry axis 101, and a first avoidance opening 1033 is formed between the first part 1031 and the second part 1032.

[0063] It can be understood that, since the collector end of the first semiconductor switch 2 is connected to the first part 1031, the collector ends of multiple first semiconductor switches 2 can use the first part 1031 for current input after being connected in parallel. At the same time, since the collector end of the second semiconductor switch 3 is connected to the second part 1032, the collector ends of multiple second semiconductor switches 3 can use the second part 1032 for current input after being connected in parallel. Therefore, the first part 1031 and the second part 1032 of the second metal layer 103 can simultaneously serve as the input ends of the bridge arm, ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0064] Among them, since the first part 1031 and the second part 1032 are symmetrically distributed along the symmetry axis 101, when the collector ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 use the second metal layer 103 to input current, the current path lengths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby achieving current sharing between the first semiconductor switches 2 and the second semiconductor switches 3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage to the first semiconductor switch 2 or the second semiconductor switch 3 due to excessive stress for a long time and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0065] The second metal layer 103 is arranged separately by the first part 1031 and the second part 1032, which can reserve a first avoidance opening 1033 for the first metal layer 102, thereby facilitating the connection between the first metal layer 102 and the metal sheet 4. In this way, while ensuring the current sharing between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, the structure of the bridge arm is more compact and reasonable, ensuring that the bridge arm has a smaller size to meet the use requirements.

[0066] It should be noted that the specific types of the first portion 1031 and the second portion 1032 can be set according to actual needs and are not limited thereto. For example, the first portion 1031 and the second portion 1032 can both be layered metals that are approximately rectangular.

[0067] When the bridge arm is used in a power module, the first part 1031 and the second part 1032 can be used for current input at the same time.

[0068] like Figure 2 As shown, in some embodiments, the first metal layer 102 includes a third part 1021 and a fourth part 1022, the third part 1021 is symmetrically distributed along the symmetry axis 101, the third part 1021 is arranged in the first avoidance opening 1033 and is connected to the third end of the metal sheet 4, the fourth part 1022 is symmetrically distributed along the symmetry axis 101, the fourth part 1022 is connected to the third part 1021, and the fourth part 1022 is located on one side of the second metal layer 103.

[0069] It can be understood that since the first end of the metal sheet 4 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, the second end of the metal sheet 4 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, and the third end of the metal sheet 4 is connected to the third part 1021, and the fourth part 1022 is connected to the third part 1021, the transmitting ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 can use the fourth part 1022 to output current after being connected in parallel, thereby ensuring the realization of the unidirectional conduction or bidirectional conduction function of the bridge arm.

[0070] Among them, since the third part 1021 is symmetrically arranged along the symmetry axis 101, and the fourth part 1022 is symmetrically distributed along the symmetry axis 101, when the transmitting ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 use the fourth part 1022 to output current, the current path lengths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby achieving current sharing between the first semiconductor switch 2 and the second semiconductor switch 3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage to the first semiconductor switch 2 or the second semiconductor switch 3 due to excessive stress for a long time and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0071] Since the third part 1021 is arranged in the first avoidance 1033 between the first part 1031 and the second part 1032, and the fourth part 1022 is located on one side of the second metal layer 103, the structure of the bridge arm is more compact and reasonable while ensuring the current equalization between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, thereby ensuring that the bridge arm has a smaller size to meet the usage requirements.

[0072] It should be noted that the specific types of the third part 1021 and the fourth part 1022 can be set according to actual needs and are not limited to this. For example, the third part 1021 and the fourth part 1022 can both be layered metals that are nearly rectangular, and the sizes of the third part 1021 and the fourth part 1022 are much smaller than the sizes of the first part 1031 and the second part 1032. At the same time, the length direction of the fourth part 1022 can be perpendicular to the axial direction of the symmetry axis 101.

[0073] When the bridge arm is used in a power module, the fourth portion 1022 can be used for outputting a DC current and can also be used for outputting an AC current at the same time.

[0074] like Figure 1 and Figure 2 As shown, in some embodiments, a second avoidance opening 1034 is provided at one end of the second metal layer 103 away from the second semiconductor switch 3, a third avoidance opening 1035 is provided at one end of the second metal layer 103 away from the first semiconductor switch 2, the bridge arm also includes a third metal layer 104 and a fourth metal layer 105, the third metal layer 104 is provided in the second avoidance opening 1034, and a second gap 107 is provided between the third metal layer 104 and the second metal layer 103, the third metal layer 104 is respectively connected to the control ends of multiple first semiconductor switches 2, the fourth metal layer 105 is provided in the third avoidance opening 1035, and a third gap 108 is provided between the fourth metal layer 105 and the second metal layer 103, and the fourth metal layer 105 is respectively connected to the control ends of multiple second semiconductor switches 3.

[0075] It can be understood that since the third metal layer 104 is respectively connected to the control ends of multiple first semiconductor switches 2, the control ends of multiple first semiconductor switches 2 can use the third metal layer 104 to input control signals after being connected in parallel. At the same time, since the fourth metal layer 105 is respectively connected to the control ends of multiple second semiconductor switches 3, the control ends of multiple second semiconductor switches 3 can use the fourth metal layer 105 to input control signals after being connected in parallel. Therefore, the function of unidirectional conduction or bidirectional conduction of the bridge arm is guaranteed.

[0076] Among them, since the fourth metal layer 105 and the third metal layer 104 are symmetrically distributed along the symmetry axis 101, when the control signals are input to the control ends of the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3, the control current path lengths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby realizing synchronous control between the first semiconductor switches 2 and the second semiconductor switches 3, thereby further reducing the difference in loss, the difference in current and voltage stress, and the difference in switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of the first semiconductor switch 2 or the second semiconductor switch 3 being damaged due to excessive stress for a long time and the problem of the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 not being able to be fully utilized.

[0077] Moreover, by setting the second avoidance opening 1034 and the third avoidance opening 1035, the structure of the bridge arm is made more compact and reasonable while facilitating the connection of the third metal layer 104 with the control end of the first semiconductor switch 2 and the fourth metal layer 105 with the control end of the second semiconductor switch 3, thereby ensuring that the bridge arm has a smaller size to meet the usage requirements.

[0078] It should be noted that the specific types of the third metal layer 104 and the fourth metal layer 105 can be set according to actual needs and are not limited to this. For example, the third metal layer 104 and the fourth metal layer 105 can be layered metals that are nearly rectangular, and the sizes of the third metal layer 104 and the fourth metal layer 105 are much smaller than the sizes of the third part 1021 and the fourth part 1022. At the same time, the length direction of the third metal layer 104 and the fourth metal layer 105 is parallel to the axial direction of the symmetry axis 101.

[0079] like Figure 2 and Figure 3 As shown, in some embodiments, the bridge arm also includes a first pin 5 and a second pin 6, the first pin 5 is arranged at an end of the third metal layer 104 away from the second metal layer 103, the first pin 5 is connected to the third metal layer 104, the second pin 6 is arranged at an end of the fourth metal layer 105 away from the second metal layer 103, the second pin 6 is connected to the fourth metal layer 105, wherein the first pin 5 and the second pin 6 are symmetrically distributed along the symmetry axis 101.

[0080] It can be understood that, since the third metal layer 104 is respectively connected to the control ends of multiple first semiconductor switches 2, and the first pin 5 is connected to the third metal layer 104, the control ends of multiple first semiconductor switches 2 can use the first pin 5 to input control signals after being connected in parallel. At the same time, since the fourth metal layer 105 is respectively connected to the control ends of multiple second semiconductor switches 3, and the second pin 6 is connected to the fourth metal layer 105, the control ends of multiple second semiconductor switches 3 can use the second pin 6 to input control signals after being connected in parallel, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0081] Among them, since the second pin 6 and the first pin 5 are symmetrically distributed along the symmetry axis 101, when the control ends of multiple first semiconductor switches 2 use the first pin 5 for signal input and the control ends of multiple second semiconductor switches 3 use the second pin 6 for signal input, the control current path lengths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby achieving synchronous control between the first semiconductor switch 2 and the second semiconductor switch 3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage to the first semiconductor switch 2 or the second semiconductor switch 3 due to excessive stress for a long time and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0082] It should be noted that when the bridge arm is used in a power module, the first pin 5 and the second pin 6 can be connected to the control chip at the same time.

[0083] like Figure 2 As shown, in some embodiments, the bridge arm also includes multiple first binding wires 9, multiple second binding wires 10, a third wire 11 and a fourth wire 12, the first binding wire 9 is arranged along a direction perpendicular to the symmetry axis 101, the first end of the first binding wire 9 is connected to the third metal layer 104, the second end of the first binding wire 9 is connected to the control end of the first semiconductor switch 2, the second binding wire 10 is arranged along a direction perpendicular to the symmetry axis 101, the first end of the second binding wire 10 is connected to the fourth metal layer 105, the second end of the second binding wire 10 is connected to the control end of the second semiconductor switch 3, the third wire 11 is arranged along a direction perpendicular to the symmetry axis 101, the first end of the third wire 11 is connected to the third metal layer 104, the second end of the third wire 11 is connected to the first pin 5, the fourth wire 12 is arranged along a direction perpendicular to the symmetry axis 101, the first end of the fourth wire 12 is connected to the fourth metal layer 105, and the second end of the fourth wire 12 is connected to the second pin 6.

[0084] It can be understood that, by setting up multiple first binding wires 9, the third metal layer 104 is connected to the control ends of multiple first semiconductor switches 2, and by setting up the third binding wire, the third metal layer 104 is connected to the first pin 5, thereby, the control ends of multiple first semiconductor switches 2 can use the first pin 5 to input control signals after being connected in parallel. At the same time, by setting up multiple second binding wires 10, the fourth metal layer 105 is connected to the control ends of multiple second semiconductor switches 3, and by setting up the fourth binding wire, the fourth metal layer 105 is connected to the second pin 6, thereby, the control ends of multiple second semiconductor switches 3 can use the second pin 6 to input control signals after being connected in parallel, thereby ensuring the realization of the function of unidirectional conduction or bidirectional conduction of the bridge arm.

[0085] Among them, since the first binding wire 9 is set along a direction perpendicular to the symmetry axis 101, the second binding wire 10 is set along a direction perpendicular to the symmetry axis 101, the third wire 11 is set along a direction perpendicular to the symmetry axis 101, and the fourth wire 12 is set along a direction perpendicular to the symmetry axis 101, when there is a current axially conducted along the symmetry axis 101 on the bridge arm, the direction of the current can be perpendicular to the current conduction direction of the first binding wire 9, the second binding wire 10, the third wire 11 and the fourth wire 12 respectively, thereby effectively reducing the coupling mutual inductance between the first binding wire 9, the second binding wire 10, the third wire 11 and the fourth wire 12 and other devices on the bridge arm, thereby effectively reducing the parasitic inductance of the bridge arm, avoiding the generation of a large spike voltage, and thus there is no need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can give full play to its advantage of high switching speed.

[0086] It should be noted that the specific types of the first binding wire 9, the second binding wire 10, the third wire 11 and the fourth wire 12 can be set according to actual needs and are not limited to this. For example, the first binding wire 9, the second binding wire 10, the third wire 11 and the fourth wire 12 can all be linear metal.

[0087] The number of the first binding wires 9 corresponds one-to-one to the number of the first semiconductor switches 2 , and the number of the second binding wires 10 corresponds one-to-one to the number of the second semiconductor switches 3 .

[0088] like Figure 1 , Figure 2 , Figure 3 and Figure 6 As shown, in some embodiments, the bridge arm further includes an insulating substrate 1, which is symmetrically distributed along a symmetry axis 101, and a first metal layer 102, a second metal layer 103, a third metal layer 104 and a fourth metal layer 105 are respectively arranged on the insulating substrate 1.

[0089] It can be understood that, by setting up the insulating substrate 1, while carrying the first metal layer 102, the second metal layer 103, the third metal layer 104 and the fourth metal layer 105, the first metal layer 102, the second metal layer 103, the third metal layer 104 and the fourth metal layer 105 can also be insulated and protected, thereby reducing the interference of the bridge arm by external devices to cause short circuit, open circuit and other problems, thereby ensuring the stable operation of the bridge arm.

[0090] It should be noted that the specific type of the insulating substrate 1 can be set according to actual needs and is not limited to this. The first metal layer 102, the second metal layer 103, the third metal layer 104 and the fourth metal layer 105 are arranged on the same surface of the insulating substrate 1, and a grounding layer can also be arranged on the surface of the insulating substrate 1 away from the first metal layer 102, the second metal layer 103, the third metal layer 104 and the fourth metal layer 105.

[0091] like Figure 2 and Figure 3 As shown, in some embodiments, the bridge arm further includes a third pin 13 and a fourth pin 15, the third pin 13 is arranged at an end of the second metal layer 102 away from the second semiconductor switch 3, the third pin 13 is connected to the emitter end of the first semiconductor switch 2, the fourth pin 15 is arranged at an end of the second metal layer 102 away from the first semiconductor switch 2, the fourth pin 15 is connected to the emitter end of the second semiconductor switch 2, wherein the third pin 13 and the fourth pin 15 are symmetrically distributed along the symmetry axis 101.

[0092] It can be understood that, since the third pin 13 is connected to the transmitting end of the first semiconductor switch 2, the transmitting ends of multiple first semiconductor switches 2 can be connected in parallel to input control signals using the third pin 13. At the same time, since the fourth pin 15 is connected to the transmitting end of the second semiconductor switch 2, the transmitting ends of multiple second semiconductor switches 3 can be connected in parallel to input control signals using the fourth pin 15, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0093] Among them, since the fourth pin 15 and the third pin 13 are symmetrically distributed along the symmetry axis 101, when the transmitting ends of multiple first semiconductor switches 2 and multiple second semiconductor switches 3 use the third pin 13 and the fourth pin 15 to input control signals, the lengths of the control current paths between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be equal, thereby achieving synchronous control between the first semiconductor switch 2 and the second semiconductor switch 3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage to the first semiconductor switch 2 or the second semiconductor switch 3 due to excessive stress for a long time and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0094] like Figure 2 As shown, in some embodiments, the bridge arm also includes a fifth wire 14 and a sixth wire 16, the fifth wire 14 is arranged in a direction perpendicular to the symmetry axis 101, the first end of the fifth wire 14 is connected to the emitter end of the first semiconductor switch 2, the second end of the fifth wire 14 is connected to the third pin 13, the sixth wire 16 is arranged in a direction perpendicular to the symmetry axis 101, the first end of the sixth wire 16 is connected to the emitter end of the second semiconductor switch 3, and the second end of the sixth wire 16 is connected to the fourth pin 15.

[0095] It can be understood that, since the first end of the fifth wire 14 is connected to the emitter end of the first semiconductor switch 2, and the second end of the fifth wire 14 is connected to the third pin 13, the emitters of multiple first semiconductor switches 2 can be connected to the third pin 13 using the fifth wire 14 after being connected in parallel, and then the control signal can be input using the third pin 13. At the same time, since the first end of the sixth wire 16 is connected to the emitter end of the second semiconductor switch 3, and the second end of the sixth wire 16 is connected to the fourth pin 15, the emitters of multiple second semiconductor switches 3 can be connected to the fourth pin 15 using the sixth wire 16 after being connected in parallel, and then the control signal can be input using the fourth pin 15, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0096] Since the fifth conductor 14 is arranged in a direction perpendicular to the axis of symmetry 101, and the sixth conductor 16 is arranged in a direction perpendicular to the axis of symmetry 101, when there is a current axially conducted along the axis of symmetry 101 on the bridge arm, the direction of the current can be perpendicular to the current conduction direction of the fifth conductor 14 and the sixth conductor 16, respectively, thereby effectively reducing the coupling mutual inductance between the fifth conductor 14 and the sixth conductor 16 and other devices on the bridge arm, thereby effectively reducing the parasitic inductance of the bridge arm, avoiding the generation of a large peak voltage, and further, there is no need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can give full play to its advantage of high switching speed.

[0097] It should be noted that the specific types of the fifth conductive wire 14 and the sixth conductive wire 16 can be set according to actual needs, and there is no limitation to this. For example, the fifth conductive wire 14 and the sixth conductive wire 16 can both be linear metal.

[0098] Since the emitters of multiple first semiconductor switches 2 are connected in parallel through the metal sheet 4, only one fifth binding wire needs to be set, and the fifth binding wire can be connected to the emitter of any first semiconductor switch 2. Similarly, since the emitters of multiple second semiconductor switches 3 are connected in parallel through the metal sheet 4, only one sixth binding wire needs to be set, and the sixth binding wire can be connected to the emitter of any second semiconductor switch 3.

[0099] Since the first binding wire 9, the second binding wire 10, the third wire 11, the fourth wire 12, the fifth wire 14 and the sixth wire 16 are all arranged in a direction perpendicular to the axis of symmetry 101, interference is generated between the fifth wire 14 and the first binding wire 9, the second binding wire 10, and between the sixth wire 16 and the third binding wire and the fourth binding wire. Therefore, the fifth binding wire and the sixth binding wire can be arranged in a direction close to perpendicular to the axis of symmetry 101.

[0100] like Figure 2 , Figure 4 and Figure 5As shown, in some embodiments, the plurality of first semiconductor switches 2 include a first switch 201, a second switch 202 and a third switch 203, the first switch 201 is arranged on the second metal layer 103, and the collector end of the first switch 201 is connected to the second metal layer 103, the emitter end of the first switch 201 is connected to the first end of the metal sheet 4, the second switch 202 is arranged on the second metal layer 103, and the collector end of the second switch 202 is connected to the second metal layer 103, the emitter end of the second switch 202 is connected to the first end of the metal sheet 4, the third switch 203 is arranged on the second metal layer 103, and the collector end of the third switch 203 is connected to the second metal layer 103, and the emitter end of the third switch 203 is connected to the first end of the metal sheet 4, wherein the first switch 201, the second switch 202 and the third switch 203 are not aligned along the axial direction of the symmetry axis 101.

[0101] It can be understood that since the transmitting ends of the first switch 201, the second switch 202 and the third switch 203 are simultaneously connected to the first end of the metal sheet 4, and the collector ends of the first switch 201, the second switch 202 and the third switch 203 are simultaneously connected to the second metal layer 103, three parallel paths are formed on the bridge arm, namely, the path formed by the second metal layer 103, the first switch 201 and the metal sheet 4, the path formed by the second metal layer 103, the second switch 202 and the metal sheet 4, and the path formed by the second metal layer 103, the third switch 203 and the metal sheet 4. As a result, the bridge arm can utilize the parallel connection of the first switch 201, the second switch 202 and the third switch 203 to carry a larger current, thereby achieving high output power.

[0102] Among them, since the third end of the metal sheet 4 is connected to the first metal layer 102, the second metal layer 102 can simultaneously output the current of the first switch 201, the second switch 202 and the third switch 203, and since the current will choose the route with the smallest impedance, the end of the first metal layer 102 close to the first switch 201 or the end of the first metal layer 102 close to the third switch 203 is used as a current collection point to output the current, which results in the first switch 201, the second switch 202 and the third switch 203 along the symmetry axis. 101 is aligned axially, the current path lengths of the first switch 201, the second switch 202 and the third switch 203 to the first metal layer 102 will be unequal. Therefore, by setting the first switch 201, the second switch 202 and the third switch 203 to be unequal along the axial direction of the symmetry axis 101, it is possible to ensure that the first switch 201, the second switch 202 and the third switch 203 have appropriate relative positions on the metal sheet 4, thereby making it easy to achieve current sharing of the first switch 201, the second switch 202 and the third switch 203.

[0103] It should be noted that, since the plurality of first semiconductor switches 2 and the plurality of second semiconductor switches 3 are symmetrically arranged, the plurality of second semiconductor switches 3 also include three switches corresponding to the first switch 201 , the second switch 202 and the third switch 203 .

[0104] The distance between the first switch 201 and the symmetry axis 101 , the distance between the second switch 202 and the symmetry axis 101 , and the distance between the third switch 203 and the symmetry axis 101 can be set according to actual needs and are not limited thereto.

[0105] like Figure 4 and Figure 5 As shown, in some embodiments, the first end of the metal sheet 4 includes a first connecting sheet 401, a second connecting sheet 402 and a third connecting sheet 403, the first connecting sheet 401 is connected to the transmitting end of the first switch 201, the second connecting sheet 402 is connected to the transmitting end of the second switch 202, and the third connecting sheet 403 is connected to the transmitting end of the third switch 203, wherein a first notch 404 is formed between the first connecting sheet 401 and the second connecting sheet 402, and a second notch 405 is formed between the second connecting sheet 402 and the third connecting sheet 403.

[0106] It can be understood that, by setting the first connecting piece 401, the connection between the first end of the metal sheet 4 and the transmitting end of the first switch 201 is achieved, by setting the second connecting piece 402, the connection between the first end of the metal sheet 4 and the transmitting end of the second switch 202 is achieved, and by setting the third connecting piece 403, the connection between the first end of the metal sheet 4 and the transmitting end of the third switch 203 is achieved, thereby ensuring the stable parallel connection between the first switch 201, the second switch 202 and the third switch 203. At the same time, due to the setting of the first notch 404 and the second notch 405, there is a certain interval between the transmitting end of the first switch 201, the transmitting end of the second switch 202 and the transmitting end of the third switch 203, thereby reducing the mutual interference between the first switch 201, the second switch 202 and the third switch 203, and ensuring the stable operation of the first switch 201, the second switch 202 and the third switch 203.

[0107] It should be noted that the first connecting piece 401 , the second connecting piece 402 and the third connecting piece 403 may have the same size and shape, or may have different sizes and shapes, and there is no limitation on this.

[0108] The distance between the first notch 404 and the symmetry axis 101 and the distance between the second notch 405 and the symmetry axis 101 may be the same or different, and there is no limitation to this.

[0109] The size and shape of the first connecting plate 401, the second connecting plate 402 and the third connecting plate 403, as well as the distance from the first notch 404 to the symmetry axis 101 and the distance from the second notch 405 to the symmetry axis 101 will affect the distance from the first switch 201, the second switch 202 and the third switch 203 to the current collection point of the first metal layer 102.

[0110] On the one hand, the current balancing between the first semiconductor switches 2 and the second semiconductor switches 3 symmetrically distributed along the symmetry axis 101 can be achieved through the symmetry between the first semiconductor switches 2 and the second semiconductor switches 3 and the symmetry of the metal sheet 4, the symmetry between the first part 1031 and the second part 1032, and the symmetry between the third part 1021 and the fourth part 1022, or can be achieved in other ways, which are not limited to this. On the other hand, the current paths between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 can be adjusted to achieve the current balance between the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3 by controlling the length of the current path. Among them, the adjustment method of the current path can be set according to actual needs, which is not limited to this.

[0111] like Figure 4 As shown, in some embodiments, the distance between the first switch 201 and the symmetry axis 101 is greater than the distance between the second switch 202 and the symmetry axis 101, the distance between the second switch 202 and the symmetry axis 101 is greater than the distance between the third switch 203 and the symmetry axis 101, a third notch 406 is provided on the side of the metal sheet 4 close to the first switch 201, a fourth notch 407 is provided in the third notch 406, and the third notch 406 and the fourth notch 407 are symmetrically distributed along the symmetry axis 101, and the distance between the first notch 404 and the symmetry axis 101 is greater than the distance between the second notch 405 and the symmetry axis 101.

[0112] It can be understood that, since the distance between the first switch 201 and the symmetry axis 101 is greater than the distance between the second switch 202 and the symmetry axis 101, and the distance between the second switch 202 and the symmetry axis 101 is greater than the distance between the third switch 203 and the symmetry axis 101, the distances between the first switch 201, the second switch 202 and the third switch 203 and the symmetry axis 101 increase successively, so that when one end of the first metal layer 102 close to the first switch 201 is used as a current collection point to output current, the current path length from the first switch 201 to the current collection point is smaller than the current path length from the second switch 202 to the current collection point, and the current path length from the third switch 203 to the current collection point is larger than the current path length from the second switch 202 to the current collection point.

[0113] At the same time, since the third notch 406 is provided on the side of the metal sheet 4 close to the first switch 201, and the fourth notch 407 is provided in the third notch 406, the current path from the first switch 201 to the current collection point is bent in the direction close to the second switch 202, so that the length of the current path from the first switch 201 to the current collection point can be further extended and equal to the length of the current path from the second switch 202 to the current collection point. Since the distance between the first notch 404 and the symmetry axis 101 is greater than the distance between the second notch 405 and the symmetry axis 101, the length of the current path from the third switch 203 to the current collection point can be extended. The current path length from the second switch 202 to the current collection point can be further shortened and made equal to the current path length from the second switch 202 to the current collection point, thereby achieving current sharing among the first switch 201, the second switch 202 and the third switch 203, reducing the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the first switch 201, the second switch 202 and the third switch 203, thereby reducing the problem of the first switch 201, the second switch 202 or the third switch 203 being damaged due to excessive stress for a long time and the problem of the current capacity of the first switch 201, the second switch 202 or the third switch 203 not being able to be fully utilized.

[0114] It should be noted that the distances between the first switch 201, the second switch 202 and the third switch 203 and the symmetry axis 101, the distances between the first notch 404 and the second notch 405 and the symmetry axis 101, and the sizes of the third notch 406 and the fourth notch 407 can be set according to actual needs and are not limited thereto.

[0115] like Figure 3 As shown, in some embodiments, the bridge arm also includes a first metal row 7 and a second metal row 8, the first metal row 7 is arranged axially along the symmetry axis 101, and the first end of the first metal row 7 is connected to the first metal layer 102, and the second metal row 8 is arranged axially along the symmetry axis 101, and the first end of the second metal row 8 is connected to the second metal layer 103.

[0116] It can be understood that, since the first end of the first metal row 7 is connected to the first metal layer 102, the emitter ends of the first switch 201, the second switch 202 and the third switch 203 can be connected in parallel to output current using the first metal row 7. At the same time, since the first end of the second metal row 8 is connected to the second metal layer 103, the collector ends of the first switch 201, the second switch 202 and the third switch 203 can be connected in parallel to input current using the second metal row 8, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0117] It should be noted that the specific types of the first metal bar 7 and the second metal bar 8 can be set according to actual needs, and there is no limitation on this. For example, the first metal bar 7 and the second metal bar 8 can both be copper bars. Among them, the three switches symmetrically distributed along the symmetry axis 101 with the first switch 201, the second switch 202 and the third switch 203 also use the first metal bar 7 to output current and use the second metal bar 8 to input current.

[0118] Among them, the first metal row 7 is arranged axially along the symmetry axis 101, and the second metal row 8 is arranged axially along the symmetry axis 101, so that the current conduction directions of the first metal row 7 and the second metal row 8 are respectively perpendicular to the current conduction directions of the first binding wire 9, the second binding wire 10, the third wire 11, the fourth wire 12, the fifth wire 14 and the sixth wire 16, thereby reducing the current coupling between the first metal row 7 and the second metal row 8 and the first binding wire 9, the second binding wire 10, the third wire 11, the fourth wire 12, the fifth wire 14 and the sixth wire 16.

[0119] like Figure 5 As shown, in some embodiments, the metal sheet 4 has a positive projection on the first metal row 7 and / or the second metal row 8, the spacing between the first switch 201 and the symmetry axis 101 is smaller than the spacing between the third switch 203 and the symmetry axis 101, the spacing between the third switch 203 and the symmetry axis 101 is smaller than the spacing between the second switch 202 and the symmetry axis 101, a fifth notch 408 is provided on the side of the metal sheet 4 close to the first switch 201, a sixth notch 409 is provided on the side of the metal sheet 4 close to the third switch 203, a seventh notch 410 is provided in the sixth notch 409, and the fifth notch 408, the sixth notch 409 and the seventh notch 410 are symmetrically distributed along the symmetry axis 101, and the spacing between the first notch 404 and the symmetry axis 101 is equal to the spacing between the second notch 405 and the symmetry axis 101.

[0120] It can be understood that, since the distance between the first switch 201 and the symmetry axis 101 is smaller than the distance between the third switch 203 and the symmetry axis 101, and the distance between the third switch 203 and the symmetry axis 101 is smaller than the distance between the second switch 202 and the symmetry axis 101, the distance between the second switch 202 and the symmetry axis 101 is the largest, and the distance between the first switch 201 and the symmetry axis 101 is the smallest, so that when one end of the first metal layer 102 close to the first switch 201 is used as a current collection point to output current, the current path length from the first switch 201 to the current collection point is smaller than the current path length from the second switch 202 to the current collection point, and the current path length from the third switch 203 to the current collection point is larger than the current path length from the second switch 202 to the current collection point.

[0121] At the same time, since the fifth notch 408 is provided on the side of the metal sheet 4 close to the first switch 201, the current path from the first switch 201 to the current collection point is bent in the direction close to the second switch 202, thereby the length of the current path from the first switch 201 to the current collection point can be further extended. Since the sixth notch 409 is provided on the side of the metal sheet 4 close to the third switch 203, and the seventh notch 410 is provided in the sixth notch 409, the current path from the third switch 203 to the current collection point is bent in the direction close to the second switch 202, thereby the length of the current path from the third switch 203 to the current collection point can be further shortened.

[0122] Moreover, since the metal sheet 4 has a positive projection on the first metal row 7 and / or the second metal row 8, mutual inductance is generated between the first metal row 7 and / or the second metal row 8 and the metal sheet 4, thereby affecting the equivalent inductance from the first switch 201, the second switch 202 and the third switch 203 to the current collection point, respectively. Therefore, by utilizing the mutual inductance caused by the first metal row 7 and / or the second metal row 8, the current path length from the first switch 201 to the current collection point can be further extended and equal to the current path length from the second switch 202 to the current collection point, and the current path length from the third switch 203 to the current collection point can be further shortened and equal to the current path length from the second switch 202 to the current collection point.

[0123] Therefore, when the metal sheet 4 is affected by the mutual inductance of the first metal row 7 and / or the second metal row 8, current sharing among the first switch 201, the second switch 202 and the third switch 203 can be achieved, thereby reducing the difference in loss, the difference in current and voltage stress, and the difference in switching speed among the first switch 201, the second switch 202 and the third switch 203, thereby reducing the problem of the first switch 201, the second switch 202 or the third switch 203 being damaged due to excessive stress for a long time and the problem of the current capacity of the first switch 201, the second switch 202 or the third switch 203 not being able to be fully utilized.

[0124] It should be noted that the distances between the first switch 201, the second switch 202 and the third switch 203 and the axis of symmetry 101, the distances between the first notch 404 and the second notch 405 and the axis of symmetry 101, and the sizes of the fifth notch 408, the sixth notch 409 and the seventh notch 410 can be set according to actual needs and are not limited thereto.

[0125] The metal sheet 4 may have an orthographic projection only on the first metal row 7 , or only on the second metal row 8 , or on both the first metal row 7 and the second metal row 8 , and there is no limitation to this.

[0126] like Figure 6As shown, in some embodiments, the metal sheet 4 includes a first planar sheet 411, a second planar sheet 412, a third planar sheet 413, a first arc-shaped sheet 414, and a second arc-shaped sheet 415. The first planar sheet 411 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second planar sheet 412 is respectively connected to the transmitting ends of multiple second semiconductor switches 3. The first planar sheet 411 and the second plane are symmetrically distributed along the symmetry axis 101, the third planar sheet 413 is located on the symmetry axis 101, the first arc-shaped sheet 414 is arranged between the third planar sheet 413 and the first planar sheet 411, the second arc-shaped sheet 415 is arranged between the third planar sheet 413 and the second planar sheet 412, and the first arc-shaped sheet 414 and the second arc-shaped sheet 415 are symmetrically distributed along the symmetry axis 101.

[0127] It can be understood that, by using the first planar piece 411 as the first end of the metal sheet 4, the connection between the metal sheet 4 and the transmitting ends of multiple first semiconductor switches 2 is achieved, by using the second planar piece 412 as the second end of the metal sheet 4, the connection between the metal sheet 4 and the transmitting ends of multiple second semiconductor switches 3 is achieved, and by using the third planar piece 413 as the third end of the metal sheet 4, the current output of the metal sheet 4 is achieved, thereby ensuring the stable parallel connection of multiple first semiconductor switches 2 and multiple second semiconductor switches 3, thereby ensuring the realization of the function of unidirectional conduction or bidirectional conduction of the bridge arm.

[0128] Among them, through the arrangement of the first arc-shaped piece 414 and the second arc-shaped piece 415, not only the first planar piece 411, the second planar piece 412 and the third planar piece 413 are stably connected, but also the metal piece 4 is ensured to have a longer current conduction path, thereby facilitating the current sharing between multiple first semiconductor switches 2 and multiple second semiconductor switches 3.

[0129] It should be noted that the specific types of the first planar sheet 411, the second planar sheet 412, the third planar sheet 413, the first arc-shaped sheet 414 and the second arc-shaped sheet 415 can be set according to actual needs, and there is no limitation on this. Among them, strip holes can be set on the first arc-shaped sheet 414 and the second arc-shaped sheet 415 so that the glue can pass through when the bridge arm is plastic-sealed and form an effective support for the metal sheet 4.

[0130] like Figure 1 , Figure 2 and Figure 3 As shown, the embodiment of the present disclosure also proposes a half bridge, including an upper bridge arm 17 and a lower bridge arm 18, the upper bridge arm 17 is a bridge arm as in the embodiment of the present disclosure, and the lower bridge arm 18 is a bridge arm as in the embodiment of the present disclosure, wherein the metal sheet 4 of the upper bridge arm 17 is respectively connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18.

[0131] It can be understood that since the first end of the metal sheet 4 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second end of the metal sheet 4 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, when the third end of the metal sheet 4 is used as a current output, multiple first semiconductor switches 2, multiple second semiconductor switches 3, and first semiconductor switches 2 and second semiconductor switches 3 can be connected in parallel. Therefore, based on the principle of parallel shunt, the bridge arm can use a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving a high output power of the half bridge.

[0132] Moreover, since the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, and the third end of the metal sheet 4 is located on the symmetry axis 101, the current path length between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, and between the first semiconductor switch 2 and the third end of the metal sheet 4 are equal to the current path length between the second semiconductor switch 3 and the third end of the metal sheet 4. Thus, current sharing between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101 is achieved, thereby reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage of the first semiconductor switch 2 or the second semiconductor switch 3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0133] Among them, the sheet-like metal sheet 4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage, thereby eliminating the need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can fully exert its advantage of high switching speed.

[0134] Moreover, the sheet-like metal sheet 4 has higher structural stability than the linear bonding wire, so that the metal sheet 4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the metal sheet 4, thereby achieving current balancing.

[0135] It should be noted that the specific arrangement between the upper bridge arm 17 and the lower bridge arm 18 can be arranged according to actual needs and is not limited thereto.

[0136] like Figure 3 As shown, in some embodiments, the second metal row 8 of the upper bridge arm 17 and the first metal row 7 of the lower bridge arm 18 are arranged close to each other and in parallel, and the current direction of the second metal row 8 of the upper bridge arm 17 is opposite to the current direction of the first metal row 7 of the lower bridge arm 18.

[0137] It can be understood that since the current direction of the second metal row 8 of the upper bridge arm 17 is opposite to the current direction of the first metal row 7 of the lower bridge arm 18, the second metal row 8 and the first metal row 7 can be mutually inductive, and then the mutual inductance is used to offset the parasitic inductance between the second metal row 8 and the first metal row 7, thereby effectively reducing the parasitic inductance of the half bridge and avoiding the generation of a large spike voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the upper bridge arm 17 and the lower bridge arm 18 can give full play to their advantages of high switching speed.

[0138] It should be noted that the distance between the second metal row 8 of the upper bridge arm 17 and the first metal row 7 of the lower bridge arm 18 can be set according to actual needs and is not limited thereto.

[0139] The first metal row 7 of the upper bridge arm 17 and the second metal row 8 of the lower bridge arm 18 can be set separately or can be the same metal row, without limitation. Among them, the first metal layer 102 of the upper bridge arm 17 and the second metal layer 103 of the lower bridge arm 18 share a metal row to reduce the material and volume of the half bridge.

[0140] The second metal row 8 of the upper bridge arm 17 can be connected to the positive pole of direct current, the first metal row 7 of the lower bridge arm 18 can be used to input the negative pole of direct current, and the first metal row 7 of the upper bridge arm 17 and the second metal row 8 of the lower bridge arm 18 can be used to output single-phase alternating current.

[0141] In some embodiments, the fourth notch 407 of the upper bridge arm 17 and the seventh notch 410 of the lower bridge arm 18 are disposed opposite to each other, and the size of the fourth notch 407 of the upper bridge arm 17 is different from the size of the seventh notch 410 of the lower bridge arm 18 .

[0142] It can be understood that, by setting the fourth notch 407 of the upper bridge arm 17, the current path of the metal sheet 4 in the upper bridge arm 17 can be adjusted, so that the current path lengths of the multiple semiconductor switches of the upper bridge arm 17 on the metal sheet 4 can be kept equal, thereby achieving current sharing between the semiconductor switches in the upper bridge arm 17. At the same time, by setting the seventh notch 410 of the lower bridge arm 18, the current path of the metal sheet 4 in the lower bridge arm 18 can be adjusted, so that the current path lengths of the multiple semiconductor switches of the lower bridge arm 18 on the metal sheet 4 can be kept equal, thereby achieving current sharing between the semiconductor switches in the lower bridge arm 18, thereby further reducing the differences in losses, current and voltage stresses, and switching speeds between the semiconductor switches, thereby reducing the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0143] like Figure 1 and Figure 2As shown, in some embodiments, the insulating substrate 1 of the upper bridge arm 17 is connected to the insulating substrate 1 of the lower bridge arm 18 , and the first metal layer 102 of the upper bridge arm 17 is connected to the second metal layer 103 of the lower bridge arm 18 .

[0144] It can be understood that since the insulating substrate 1 of the upper bridge arm 17 is connected to the insulating substrate 1 of the lower bridge arm 18, the first metal layer 102 of the upper bridge arm 17 is connected to the second metal layer 103 of the lower bridge arm 18, so that the upper bridge arm 17 and the lower bridge arm 18 can share an insulating substrate 1 and form an integral structure, and the first metal layer 102 of the upper bridge arm 17 and the second metal layer 103 of the lower bridge arm 18 can share a metal layer and form an integral structure, thereby not only realizing the connection between the metal sheet 4 of the upper bridge arm 17 and the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18, but also ensuring the structural stability of the half bridge, while reducing the material and volume of the half bridge, making the cost of the half bridge lower and more convenient to use.

[0145] The embodiment of the present disclosure further provides a power module, comprising a half bridge as described in the embodiment of the present disclosure.

[0146] It can be understood that since the first end of the metal sheet 4 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second end of the metal sheet 4 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, when the third end of the metal sheet 4 is used as a current output, parallel connection can be achieved between multiple first semiconductor switches 2, between multiple second semiconductor switches 3, and between the first semiconductor switch 2 and the second semiconductor switch 3. Therefore, based on the principle of parallel shunt, the bridge arm can use a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving a high output power of the power module.

[0147] Moreover, since the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, and the third end of the metal sheet 4 is located on the symmetry axis 101, the current path length between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, and between the first semiconductor switch 2 and the third end of the metal sheet 4 are equal to the current path length between the second semiconductor switch 3 and the third end of the metal sheet 4. Thus, current sharing between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101 is achieved, thereby reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage of the first semiconductor switch 2 or the second semiconductor switch 3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0148] Among them, the sheet-like metal sheet 4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage, thereby eliminating the need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can fully exert its advantage of high switching speed.

[0149] Moreover, the sheet-like metal sheet 4 has higher structural stability than the linear bonding wire, so that the metal sheet 4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the metal sheet 4, thereby achieving current balancing.

[0150] Since the metal sheet 4 of the upper bridge arm 17 is connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18, the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 17 can be connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18, thereby making the first semiconductor switch 2 and the second semiconductor switch 3 of the upper bridge arm 17 and the first semiconductor switch 2 and the second semiconductor switch 3 of the lower bridge arm 18 form a half-bridge circuit, and then the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0151] It should be noted that the specific type of the power module can be set according to actual needs and is not limited to this. For example, the power module may include three half bridges, and the power output by the three half bridges constitutes a three-phase alternating current.

[0152] The embodiment of the present disclosure also provides a vehicle, comprising a power module according to the embodiment of the present disclosure.

[0153] It can be understood that since the first end of the metal sheet 4 is respectively connected to the transmitting ends of multiple first semiconductor switches 2, and the second end of the metal sheet 4 is respectively connected to the transmitting ends of multiple second semiconductor switches 3, when the third end of the metal sheet 4 is used as a current output, parallel connection can be achieved between multiple first semiconductor switches 2, between multiple second semiconductor switches 3, and between the first semiconductor switch 2 and the second semiconductor switch 3. Therefore, based on the principle of parallel shunt, the bridge arm can use a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving a high output power of the power module.

[0154] Moreover, since the first end and the second end of the metal sheet 4 are symmetrically distributed along the symmetry axis 101, and the third end of the metal sheet 4 is located on the symmetry axis 101, the current path length between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101, and between the first semiconductor switch 2 and the third end of the metal sheet 4 are equal to the current path length between the second semiconductor switch 3 and the third end of the metal sheet 4. Thus, current sharing between the first semiconductor switch 2 and the second semiconductor switch 3 symmetrically distributed along the symmetry axis 101 is achieved, thereby reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch 2 and the second semiconductor switch 3, thereby reducing the problem of damage of the first semiconductor switch 2 or the second semiconductor switch 3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch 2 or the second semiconductor switch 3 cannot be fully utilized.

[0155] Among them, the sheet-like metal sheet 4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage, thereby eliminating the need to reduce the switching speed of the multiple first semiconductor switches 2 and the multiple second semiconductor switches 3, thereby ensuring that the bridge arm can fully exert its advantage of high switching speed.

[0156] Moreover, the sheet-like metal sheet 4 has higher structural stability than the linear bonding wire, so that the metal sheet 4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the metal sheet 4, thereby achieving current balancing.

[0157] Since the metal sheet 4 of the upper bridge arm 17 is connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18, the emitter end of the first semiconductor switch 2 and the emitter end of the second semiconductor switch 3 of the upper bridge arm 17 can be connected to the collector end of the first semiconductor switch 2 and the collector end of the second semiconductor switch 3 of the lower bridge arm 18, thereby making the first semiconductor switch 2 and the second semiconductor switch 3 of the upper bridge arm 17 and the first semiconductor switch 2 and the second semiconductor switch 3 of the lower bridge arm 18 form a half-bridge circuit, and then the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0158] It should be noted that the specific type of vehicle can be set according to actual needs and is not limited to this. For example, the vehicle can be an electric vehicle, a fuel vehicle, etc.

[0159] In this article, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A bridge arm, characterized in that: include: a plurality of first semiconductor switches; A plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a symmetry axis; A metal sheet, wherein the first end and the second end of the metal sheet are symmetrically distributed along the symmetry axis, and the third end of the metal sheet is located on the symmetry axis, the first end of the metal sheet is respectively connected to the emission ends of the plurality of the first semiconductor switches, and the second end of the metal sheet is respectively connected to the emission ends of the plurality of the second semiconductor switches.

2. The bridge arm according to claim 1, characterized in that: The bridge arm also includes: A first metal layer, wherein the first metal layer is symmetrically distributed along the symmetry axis; a second metal layer, wherein the second metal layer is symmetrically distributed along the symmetry axis, the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer; The second metal layer is provided with a first avoidance opening at the symmetry axis, one end of the first metal layer extends into the first avoidance opening and is connected to the third end of the metal sheet, and a first gap is provided between the first metal layer and the second metal layer.

3. The bridge arm according to claim 2, characterized in that: The second metal layer comprises: a first part, the first semiconductor switch is arranged on the first part, and a collector end of the first semiconductor switch is connected to the first part; a second part, wherein the second semiconductor switch is arranged on the second part, and a collector end of the second semiconductor switch is connected to the second part; The first part and the second part are symmetrically distributed along the symmetry axis, and the first avoidance opening is formed between the first part and the second part.

4. The bridge arm according to claim 3, characterized in that: The first metal layer comprises: a third part, the third part is symmetrically distributed along the symmetry axis, the third part is arranged in the first avoidance opening and connected to the third end of the metal sheet; The fourth part is symmetrically distributed along the symmetry axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

5. The bridge arm according to claim 2, characterized in that: A second avoidance opening is provided at one end of the second metal layer away from the second semiconductor switch, and a third avoidance opening is provided at one end of the second metal layer away from the first semiconductor switch; The bridge arm also includes: a third metal layer and a fourth metal layer, the third metal layer is arranged in the second avoidance, and a second gap is arranged between the third metal layer and the second metal layer, the third metal layer is respectively connected to the control ends of multiple first semiconductor switches, the fourth metal layer is arranged in the third avoidance, and a third gap is arranged between the fourth metal layer and the second metal layer, and the fourth metal layer is respectively connected to the control ends of multiple second semiconductor switches.

6. The bridge arm according to claim 5, characterized in that: The bridge arm also includes: A first pin, the first pin is arranged at an end of the third metal layer away from the second metal layer, and the first pin is connected to the third metal layer; A second pin, the second pin is arranged at an end of the fourth metal layer away from the second metal layer, and the second pin is connected to the fourth metal layer; Wherein, the first pin and the second pin are symmetrically distributed along the symmetry axis.

7. The bridge arm according to claim 6, characterized in that: The bridge arm also includes: a plurality of first binding wires, wherein the first binding wires are arranged in a direction perpendicular to the symmetry axis, a first end of the first binding wire is connected to the third metal layer, and a second end of the first binding wire is connected to a control end of the first semiconductor switch; a plurality of second binding wires, wherein the second binding wires are arranged in a direction perpendicular to the symmetry axis, a first end of the second binding wire is connected to the fourth metal layer, and a second end of the second binding wire is connected to a control end of the second semiconductor switch; A third wire, the third wire is arranged in a direction perpendicular to the symmetry axis, a first end of the third wire is connected to the third metal layer, and a second end of the third wire is connected to the first pin; A fourth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the fourth wire is connected to the fourth metal layer, and a second end of the fourth wire is connected to the second pin.

8. The bridge arm according to claim 5, characterized in that: The bridge arm also includes: An insulating substrate is symmetrically distributed along the symmetry axis, and the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are respectively arranged on the insulating substrate.

9. The bridge arm according to claim 2, characterized in that: The bridge arm also includes: A third pin, the third pin is arranged at an end of the second metal layer away from the second semiconductor switch, and the third pin is connected to the transmitting end of the first semiconductor switch; a fourth pin, the fourth pin being arranged at an end of the second metal layer away from the first semiconductor switch, and the fourth pin being connected to a transmitting end of the second semiconductor switch; Wherein, the third pin and the fourth pin are symmetrically distributed along the symmetry axis.

10. The bridge arm according to claim 9, characterized in that: The bridge arm also includes: a fifth wire, wherein the fifth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the fifth wire is connected to the emitter end of the first semiconductor switch, and a second end of the fifth wire is connected to the third pin; A sixth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the sixth wire is connected to the emitter end of the second semiconductor switch, and a second end of the sixth wire is connected to the fourth pin.

11. The bridge arm according to claim 2, characterized in that: The plurality of first semiconductor switches include: a first switch, wherein the first switch is disposed on the second metal layer, a collector end of the first switch is connected to the second metal layer, and a transmitter end of the first switch is connected to a first end of the metal sheet; a second switch, wherein the second switch is disposed on the second metal layer, a collector end of the second switch is connected to the second metal layer, and a transmitter end of the second switch is connected to the first end of the metal sheet; a third switch, wherein the third switch is disposed on the second metal layer, a collector end of the third switch is connected to the second metal layer, and a transmitter end of the third switch is connected to the first end of the metal sheet; The first switch, the second switch and the third switch are not aligned along the axial direction of the symmetry axis.

12. The bridge arm according to claim 11, characterized in that: The first end of the metal sheet comprises: A first connecting piece, wherein the first connecting piece is connected to a transmitting end of the first switch; a second connecting piece, wherein the second connecting piece is connected to a transmitting end of the second switch; a third connecting piece connected to a transmitting end of the third switch; Wherein, a first gap is formed between the first connecting piece and the second connecting piece, and a second gap is formed between the second connecting piece and the third connecting piece.

13. The bridge arm according to claim 12, characterized in that: The distance between the first switch and the axis of symmetry is greater than the distance between the second switch and the axis of symmetry, and the distance between the second switch and the axis of symmetry is greater than the distance between the third switch and the axis of symmetry; A third notch is provided on a side of the metal sheet close to the first switch, a fourth notch is provided inside the third notch, and the third notch and the fourth notch are symmetrically distributed along the symmetry axis; The distance between the first notch and the symmetry axis is greater than the distance between the second notch and the symmetry axis.

14. The bridge arm according to claim 12, characterized in that: The bridge arm also includes: A first metal row, the first metal row is arranged along the axial direction of the symmetry axis, and a first end of the first metal row is connected to the first metal layer; A second metal row, wherein the second metal row is arranged along the axial direction of the symmetry axis, and a first end of the second metal row is connected to the second metal layer.

15. The bridge arm according to claim 14, characterized in that: The metal sheet has an orthographic projection on the first metal row and / or the second metal row; The distance between the first switch and the axis of symmetry is smaller than the distance between the third switch and the axis of symmetry, and the distance between the third switch and the axis of symmetry is smaller than the distance between the second switch and the axis of symmetry; A fifth notch is provided on a side of the metal sheet close to the first switch, a sixth notch is provided on a side of the metal sheet close to the third switch, a seventh notch is provided inside the sixth notch, and the fifth notch, the sixth notch and the seventh notch are symmetrically distributed along the symmetry axis; The distance between the first notch and the axis of symmetry is equal to the distance between the second notch and the axis of symmetry.

16. The bridge arm according to claim 1, characterized in that: The metal sheet comprises: A first planar sheet, a second planar sheet, a third planar sheet, a first arc-shaped sheet and a second arc-shaped sheet, the first planar sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, the second planar sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches, the first planar sheet and the second planar sheet are symmetrically distributed along the symmetry axis, the third planar sheet is located on the symmetry axis, the first arc-shaped sheet is arranged between the third planar sheet and the first planar sheet, the second arc-shaped sheet is arranged between the third planar sheet and the second planar sheet, and the first arc-shaped sheet and the second arc-shaped sheet are symmetrically distributed along the symmetry axis.

17. A half bridge, characterized in that: include: An upper bridge arm, wherein the upper bridge arm is a bridge arm as claimed in any one of claims 1 to 16; A lower bridge arm, wherein the lower bridge arm is a bridge arm as claimed in any one of claims 1 to 16; Wherein, the metal sheet of the upper bridge arm is connected to the first semiconductor switch collector terminal and the second semiconductor switch collector terminal of the lower bridge arm respectively.

18. The half bridge according to claim 17, characterized in that The second metal row of the upper bridge arm and the first metal row of the lower bridge arm are arranged close to each other and in parallel, and the current direction of the second metal row of the upper bridge arm is opposite to the current direction of the first metal row of the lower bridge arm.

19. The half bridge according to claim 17, characterized in that The fourth notch of the upper bridge arm is arranged opposite to the seventh notch of the lower bridge arm, and the size of the fourth notch of the upper bridge arm is different from the size of the seventh notch of the lower bridge arm.

20. The half bridge according to claim 17, characterized in that The insulating substrate of the upper bridge arm is connected to the insulating substrate of the lower bridge arm, and the first metal layer of the upper bridge arm is connected to the second metal layer of the lower bridge arm.

21. A power module, characterized in that: include: A half-bridge as claimed in any one of claims 17 to 20.

22. A vehicle, characterized in that: include: The power module as claimed in claim 21.

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