Lithography machine and light source array adjustment method

Abstract

The application discloses a photolithography machine and a light source array adjustment method. The method is used for obtaining a target photolithography pattern to be photolithographed, determining a parallel light distribution shape control algorithm according to the target photolithography pattern, controlling a UV parallel light source to generate UV parallel light, controlling an arrayed spatial light modulator to shape the distribution shape of the UV parallel light to form a target primary shaping light beam according to the parallel light distribution shape control algorithm, shaping the target primary shaping light beam entering the mask plate to form a target secondary shaping light beam, and controlling a focusing mirror to focus the target secondary shaping light beam to form a target exposure light beam corresponding to the target photolithography pattern. The application can make the photolithography machine accurately output the distribution shape of the target light.

Description

Technical Field

[0001] The present application relates to the technical field of photolithography machines, and in particular to a photolithography machine and a method for adjusting a light source array. Background Art

[0002] Traditional lithography machine compound eye lenses are divided into two types: single-body compound eye lenses and double-row separated compound eye lenses. According to the conservation of optical etendue, the light path after collimation of the single-body compound eye array has a certain divergence angle, which makes the divergence angle emitted from the compound eye lens much larger than the theoretical design field of view requirement of the focusing mirror. This is equivalent to the problem that the extra field of view light is stray light. The double-row separated compound eye lens has an assembly process that requires high alignment accuracy of the front and rear rows of compound eyes, which is prone to problems such as color deficiency and edge deficiency. In addition, most traditional compound eye lenses use a single lens glued together to form the entire compound eye. The gap between the lens units is large, and some light is lost after the light source passes through the front compound eye lens, which reduces the uniformity of the light and cannot accurately output the distribution shape of the target light. Summary of the Invention

[0003] The embodiments of the present application provide a method, device, storage medium and electronic device for adjusting a photolithography machine and a light source array, which can enable the photolithography machine to accurately output the distribution shape of the target light.

[0004] In a first aspect, an embodiment of the present application provides a lithography machine, comprising:

[0005] A UV parallel light source, wherein the UV parallel light source is used to generate UV parallel light;

[0006] An arrayed spatial light modulator, the arrayed spatial light modulator is used to shape the distribution shape of the incident UV parallel light to form a preliminary shaped light beam;

[0007] a mask plate, the mask plate being used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam;

[0008] A focusing mirror, used for focusing the secondary shaped light beam to form an exposure light beam;

[0009] A processor, wherein the processor is connected to the UV parallel light source, the arrayed spatial light modulator, and the focusing mirror, and the processor is configured to:

[0010] Obtaining a target photolithographic pattern to be photolithographically processed;

[0011] determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0012] Controlling the UV parallel light source to generate target UV parallel light;

[0013] Controlling the arrayed spatial light modulator according to the parallel light distribution shape control algorithm to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam;

[0014] shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam;

[0015] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0016] In a second aspect, an embodiment of the present application further provides a method for adjusting an arrayed light source of a lithography machine, which is applied to a lithography machine, wherein the lithography machine includes a UV parallel light source for generating UV parallel light, an arrayed spatial light modulator for shaping the distribution shape of the incident UV parallel light to form a primary shaped beam, a mask for shaping the distribution shape of the incident primary shaped beam to form a secondary shaped beam, and a focusing lens for focusing the secondary shaped beam to form an exposure beam. The method includes:

[0017] Obtaining a target photolithographic pattern to be photolithographically processed;

[0018] determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0019] Controlling the UV parallel light source to generate target UV parallel light;

[0020] Controlling the arrayed spatial light modulator according to the parallel light distribution shape control algorithm to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam;

[0021] shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam;

[0022] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0023] An embodiment of the present application provides an arrayed fly-eye lens composed of an arrayed spatial light modulator. By replacing the traditional fly-eye lens with the arrayed spatial light modulator and controlling the distribution shape of the incident UV parallel light through a parallel light distribution shape control algorithm determined according to the target photolithography pattern to be photolithographically processed, the photolithography machine can accurately output the target light, which is also the target exposure beam, thereby accurately generating a target exposure pattern corresponding to the target photolithography pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 Schematic diagram of an application scenario of the arrayed transmissive liquid crystal spatial light modulator provided in an embodiment of the present application.

[0026] Figure 2 Schematic diagram of an application scenario of the arrayed reflective liquid crystal spatial light modulator provided in an embodiment of the present application.

[0027] Figure 3 Schematic diagram of an application scenario of the arrayed digital micromirror device spatial light modulator provided in an embodiment of the present application.

[0028] Figure 4 A first flow chart of the method for adjusting the array light source of a lithography machine provided in an embodiment of the present application. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0030] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] The present application provides a photolithography machine, which may include a UV parallel light source, and the UV parallel light source is used to generate UV parallel light.

[0032] The lithography machine may further include an arrayed spatial light modulator, which is used to adjust the distribution shape, especially the edge shape, of the incident UV parallel light to form a preliminary shaped light beam.

[0033] An arrayed fly-eye lens composed of an arrayed spatial light modulator proposed in an embodiment of the present application is formed by replacing a traditional fly-eye lens with an arrayed spatial light modulator. Unlike a traditional fly-eye lens, which is formed by pasting lens units together, the unit gap is large, and there are problems such as partial light loss after passing through the fly-eye lens, reduced light uniformity, and inability to accurately output the distribution shape of the target light.

[0034] Because the arrayed spatial light modulator provided in this application has a compact structure, each modulation unit is only micro-nano-sized, and the gaps between modulation units are much smaller than the size of the modulation units themselves, the light loss after passing through the arrayed spatial modulator is greatly reduced, the light uniformity is improved, and the distribution shape of the target light is precisely output by controlling the on-off, energy, phase, and power of the parallel light through an algorithm. Among them, the specific control principle for controlling the distribution shape of the parallel light is that the arrayed spatial light modulator controls each independent thin-film liquid crystal transistor array under the control of the parallel light distribution shape control algorithm, and the liquid crystal crystal is rotated under voltage to achieve the change of the parallel light path. It should be noted that the independent thin-film liquid crystal transistor array corresponds to the modulation unit of the arrayed spatial light modulator.

[0035] The photolithography machine may further include a mask plate, which is used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam.

[0036] The mask shaping the distribution shape of the incident secondary shaped light beam specifically refers to the mask shaping the optical path profile of the primary shaped light beam to form a secondary shaped light beam.

[0037] The lithography machine may further include a focusing mirror, which is used to focus the secondary shaped light beam to form an exposure light beam.

[0038] Among them, the fly-eye lens of the lithography machine provided in the embodiment of the present application includes the arrayed spatial light modulator and the focusing mirror.

[0039] It should be noted that the exposure beam can be received by a wafer. The surface of the wafer is coated with a photoresist for exposure, so that the desired pattern is formed on the photoresist surface. The wafer refers to the silicon wafer used in the manufacture of silicon semiconductor integrated circuits using a photolithography machine. The wafer is used to receive the exposure beam and generate the corresponding exposure pattern.

[0040] The lithography machine may also include devices such as a processor and a memory. The processor can be used to process various operations of the lithography machine. The processor and the memory are integrated on a circuit board. The processor is respectively connected to the UV parallel light source, the arrayed spatial light modulator and the focusing mirror.

[0041] The processor is the control center of the lithography machine. It uses interfaces and lines to connect the various parts of the entire lithography machine. By running or loading computer programs stored in the memory and calling data stored in the memory, it executes various functions of the lithography machine and processes data, thereby controlling the lithography machine as a whole.

[0042] Specifically, the processor can obtain a target photolithographic pattern to be lithographed, determine a parallel light distribution shape control algorithm based on the target photolithographic pattern, control the UV parallel light source to generate target UV parallel light, control the arrayed spatial light modulator to shape the incident UV parallel light according to the parallel light distribution shape control algorithm to form a target primary shaped beam, shape the incident target primary shaped beam according to the mask to form a target secondary shaped beam, and control the focusing mirror to focus the incident target secondary shaped beam to form a target exposure beam corresponding to the target photolithographic pattern. By receiving the target exposure beam on the wafer, a target exposure pattern corresponding to the target photolithographic pattern can be generated. The arrayed light source adjustment method for a photolithography machine provided in this application enables the photolithography machine to accurately output the target light, that is, the target exposure beam, thereby accurately generating a target exposure pattern corresponding to the target photolithographic pattern.

[0043] In some embodiments, the arrayed spatial light modulator may be an arrayed transmissive liquid crystal spatial light modulator (SLM), see Figure 1 , Figure 1 Schematic diagram of the application scenario of the arrayed transmissive liquid crystal spatial light modulator provided in an embodiment of the present application, wherein a UV parallel light source 10, a mask plate 20 and an arrayed transmissive liquid crystal spatial light modulator 30 are placed in parallel, and the arrayed transmissive liquid crystal spatial light modulator 30 is arranged between the UV parallel light source 10 and the mask plate 20. The processor controls the arrayed transmissive liquid crystal spatial light modulator 30 to shape the distribution shape of the incident UV parallel light to form a primary shaped beam. The primary shaped beam is directly incident on the mask plate 30 to form a secondary shaped beam. The secondary shaped beam is directly incident on the focusing mirror 40. The focusing mirror 40 focuses the incident beam to form an exposure beam. The exposure beam is incident on the wafer 50. The wafer 50 receives the exposure beam to generate a corresponding exposure pattern.

[0044] For details, please refer to Figure 1The arrayed compound eye lens is composed of an arrayed transmissive liquid crystal spatial light modulator 30. The arrayed transmissive liquid crystal spatial light modulator 30 uses transparent liquid crystal. The arrayed transmissive liquid crystal spatial light modulator 30 is adjusted according to the parallel light distribution shape control algorithm. The arrayed transmissive liquid crystal spatial light modulator 30 corresponding to the part that needs to be exposed is in the open state, allowing the parallel light to pass through the arrayed transmissive liquid crystal spatial light modulator 30 freely and adjusting the emission energy of the parallel light according to the exposure requirements; the arrayed transmissive liquid crystal spatial light modulator 30 corresponding to the part that does not need to be exposed is in the off state, so that the parallel light cannot pass through the arrayed transmissive liquid crystal spatial light modulator 30; at the edge position of the photolithography pattern, the arrayed transmissive liquid crystal spatial light modulator 30 not only adjusts the energy passing through the arrayed transmissive liquid crystal spatial light modulator 30 according to the parallel light distribution shape control algorithm, but also adjusts the phase of the parallel light so that the phase of the edge part is superimposed or subtracted, thereby improving the clarity of the edge of the photolithography pattern and finally inducing the photoresist to complete a more refined photochemical reaction.

[0045] In some embodiments, the arrayed spatial light modulator may be an arrayed reflective liquid crystal spatial light modulator (SLM), see Figure 2 , Figure 2 Schematic diagram of the application scenario of the arrayed reflective liquid crystal spatial light modulator provided in an embodiment of the present application, wherein the UV parallel light source 10 is placed at a 90-degree angle to the mask plate 20, the mask plate 20 and the focusing lens 40 are placed in parallel, and the arrayed reflective liquid crystal spatial light modulator 31 is arranged at a 45-degree angle between the UV parallel light source and the mask plate 20. The processor controls the arrayed reflective liquid crystal spatial light modulator 31 to adjust the distribution shape of the incident UV parallel light to form a primary shaped beam. The primary shaped beam is rotated 90 degrees and reflected into the mask plate 20 to form a secondary shaped beam. The secondary shaped beam is directly incident on the focusing lens 40, and the focusing lens 40 focuses the incident beam to form an exposure beam. The exposure beam is incident on the wafer 50, and the wafer 50 receives the exposure beam to generate a corresponding exposure pattern.

[0046] Please continue reading Figure 2 The lithography machine may further include a first heat sink 60, which is arranged on the back of the arrayed reflective liquid crystal spatial light modulator 31. The first heat sink 60 converts the target UV parallel light that is not reflected by the arrayed reflective liquid crystal spatial light modulator 31 into heat energy and dissipates it.

[0047] For details, please refer to Figure 2, an arrayed compound eye lens composed of an arrayed reflective liquid crystal spatial light modulator 31 is adopted. The arrayed reflective liquid crystal spatial light modulator 31 is adjusted according to the parallel light distribution shape control algorithm. The arrayed reflective liquid crystal spatial light modulator 31 corresponding to the part that needs to be exposed is in the on state, so that the parallel light is reflected into the focusing mirror 40 and the emission energy of the parallel light is adjusted according to the exposure requirements; the arrayed reflective liquid crystal spatial light modulator 31 corresponding to the part that does not need to be exposed is in the off state, so that the light energy of the parallel light is converted into heat energy and dissipated through the first heat sink 60, so that the parallel light cannot be reflected into the focusing mirror 40; at the edge position of the photolithography pattern, the arrayed reflective liquid crystal spatial light modulator 31 not only adjusts the energy reflected into the focusing mirror 40 according to the parallel light distribution shape control algorithm, but also adjusts the phase of the parallel light so that the phase of the edge part is superimposed or subtracted, thereby improving the clarity of the edge of the photolithography pattern and ultimately achieving a finer exposure pattern.

[0048] In some embodiments, the arrayed spatial light modulator may be an arrayed digital micromirror device spatial light modulator (DMD), see Figure 3 , Figure 3 Schematic diagram of an application scenario of the arrayed digital micromirror device spatial light modulator provided in an embodiment of the present application, wherein the UV parallel light source 10 is placed at a 90-degree angle to the mask plate 20, the mask plate 20 and the focusing mirror 40 are placed in parallel, and the arrayed digital micromirror device spatial light modulator 32 is arranged at a 45-degree angle between the UV parallel light source 10 and the mask plate 20. The processor controls the arrayed digital micromirror device spatial light modulator 32 to adjust the distribution shape of the incident UV parallel light to form a primary shaped beam. The primary shaped beam is rotated 90 degrees and reflected into the mask plate 20 to form a secondary shaped beam. The secondary shaped beam is directly incident on the focusing mirror 40, and the focusing mirror 40 focuses the incident beam to form an exposure beam. The exposure beam is incident on the wafer 50, and the wafer 50 receives the exposure beam to generate a corresponding exposure pattern.

[0049] Please continue reading Figure 3 The lithography machine may further include a second heat sink 61, which is arranged opposite the arrayed digital micromirror device spatial light modulator 32. The second heat sink 61 converts the parallel light that does not enter the focusing mirror 40 into heat energy for dissipation.

[0050] For details, please refer to Figure 3, an arrayed compound eye lens composed of an arrayed digital micromirror device spatial light modulator 32 is used. The arrayed digital micromirror device spatial light modulator 32 is adjusted according to the parallel light distribution shape control algorithm. The arrayed digital micromirror device spatial light modulator 32 corresponding to the part that needs to be exposed reflects the parallel light into the focusing lens 40 and adjusts the emission energy of the parallel light according to the exposure requirement; the arrayed digital micromirror device spatial light modulator 32 corresponding to the part that does not need to be exposed reflects the parallel light to the surface of the second heat sink 61 opposite the arrayed digital micromirror device spatial light modulator 32, so as to convert the parallel light incident on the second heat sink 61 into heat energy and dissipate it, so that the parallel light cannot be reflected into the focusing lens 40; at the edge of the photolithography pattern, the parallel light distribution shape control algorithm controls the liquid crystal state of the arrayed digital micromirror device spatial light modulator 32 to adjust the phase of the parallel light. At the same time, power adjustment is achieved through the superposition or offset of the phases and the clarity of the edge of the photolithography pattern is improved, ultimately achieving a finer exposure pattern.

[0051] The present application provides an arrayed fly-eye lens composed of an arrayed spatial light modulator, which has a certain divergence angle compared to the light path after collimation of a single fly-eye lens, so that the divergence angle of the light emitted from the fly-eye lens is much larger than the theoretical design field of view requirement of the focusing lens. Each modulation unit of the arrayed spatial light modulator shapes the emitted parallel light, thereby limiting the divergence angle of the light path, avoiding the problem that the divergence angle of the light emitted is much larger than the theoretical design field of view requirement of the focusing lens, and making the exposure pattern more refined.

[0052] The arrayed fly-eye lens provided by the present application, which is composed of an arrayed spatial light modulator, has high requirements for the alignment accuracy of the front and rear fly-eyes during the assembly process and is prone to problems such as color deficiency and edge deficiency. The arrayed spatial light modulator does not require front and rear row alignment during the assembly process, thereby reducing the assembly process requirements.

[0053] Because the parallel light distribution shape control algorithm generated by artificial intelligence not only adjusts the on-off of the parallel light at the edge of the lithography pattern, but also adjusts the energy, phase and power of the parallel light at the edge of the pattern, it avoids problems such as color loss and edge loss.

[0054] In addition, the arrayed compound eye lens composed of an arrayed spatial light modulator provided by the present application is different from the traditional lithography machine light path, in which the uniform light obtained by collimating the compound eye lens is used to expose the mask pattern micro-scaled onto the device through a focusing mirror. The arrayed compound eye lens composed of an arrayed spatial light modulator proposed by the present application directly controls the on-off, energy, phase and power of the parallel light through the pre-input digital mask pattern during the light uniformity process through the artificial intelligence configuration parallel light distribution shape control algorithm.

[0055] In addition, in some embodiments, the processor can also divide the target photolithography pattern into a target basic mask pattern group, determine the control-specific algorithm of the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence, and generate the parallel light distribution shape control algorithm according to each of the control-specific algorithms.

[0056] It should be noted that the target photolithography pattern is composed of the corresponding target basic mask pattern. When generating the target photolithography pattern, the target basic mask pattern can be generated separately to obtain the target photolithography pattern. Therefore, the control-specific algorithms corresponding to the target basic mask pattern are spliced ​​and combined to obtain a parallel light distribution shape control algorithm that can generate the target exposure pattern corresponding to the target photolithography pattern.

[0057] In some embodiments, the processor can also obtain a basic mask pattern, obtain the lithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of the arrayed spatial light modulator, establish the relationship between the exposure and development results and the modulation parameters based on artificial intelligence, and generate the control-specific algorithm.

[0058] Specifically, the specific generation process of the control-specific algorithm is as follows:

[0059] The first step is to obtain a basic photolithographic pattern, which is a basic photolithographic pattern commonly used in the photolithography process, such as a simple pattern such as a circle, a quadrilateral, a polygon, a five-pointed star, etc.

[0060] The second step is to form a basic lithographic pattern database by collecting information such as the lithography algorithm, exposure and development results under different spatial light modulator modulation parameters. The spatial light modulator modulation parameters include the on-off, light intensity, light phase and light power of each independent thin-film liquid crystal transistor array.

[0061] In the third step, AI uses a mechanical deep loop learning method to establish the relationship between the exposure and development results of the basic lithography pattern and the modulation parameters of the spatial light modulator to form a dedicated control algorithm. Specifically:

[0062] 1. If the spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, an iterative calculation is performed on the relationship between the on / off, energy, and phase parameters of the light passing through the arrayed transmissive liquid crystal spatial light modulator and entering the focusing lens and the exposure and development results of the photolithography pattern to ultimately form a dedicated control algorithm.

[0063] 2. If the spatial light modulator is an arrayed reflective liquid crystal spatial light modulator, the relationship between the reflection, energy and phase parameters of the light reflected from the arrayed reflective liquid crystal spatial light modulator and entering the focusing lens and the exposure and development results of the photolithography pattern is iteratively calculated to ultimately form a dedicated control algorithm.

[0064] 3. If the spatial light modulator is an arrayed digital micromirror device spatial light modulator, an iterative calculation is performed on the relationship between the reflection, energy and power parameters of the light reflected from the arrayed digital micromirror device spatial light modulator and entering the focusing mirror and the exposure and development results of the photolithography pattern to ultimately form a dedicated control algorithm.

[0065] Among them, mechanical deep recurrent learning is a method that combines deep learning and recurrent neural networks, that is, a method that combines deep learning and repeated iterations.

[0066] The present application also provides a method for adjusting the array light source of a lithography machine. Figure 4 , Figure 4 The first flow diagram of the parallel light adjustment method of the lithography machine provided in the embodiment of the present application is provided. The arrayed light source adjustment method of the lithography machine can be applied to the lithography machine as described in the embodiment of the application above. The arrayed light source adjustment method of the lithography machine can include the following steps:

[0067] S110 , obtaining a target photolithography pattern to be photolithographically processed.

[0068] The target photolithographic pattern is a photolithographic pattern that needs to be photolithographically processed, and can be obtained by inputting a digital file of the photolithographic pattern into a photolithography machine.

[0069] S120 , determining a parallel light distribution shape control algorithm according to the target photolithography pattern.

[0070] In some embodiments, the step of “determining a parallel light distribution shape control algorithm according to the target lithography pattern” may include the following steps:

[0071] dividing the target photolithographic pattern into target basic mask pattern groups;

[0072] Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence;

[0073] The parallel light distribution shape control algorithm is generated according to each of the control-specific algorithms.

[0074] In this embodiment, the dedicated control algorithm corresponding to each target basic mask pattern in the target basic mask pattern group is spliced ​​and combined to obtain the parallel light distribution shape control algorithm.

[0075] It should be noted that the target photolithography pattern is composed of the corresponding target basic mask pattern. When generating the target photolithography pattern, the target basic mask pattern can be generated separately to obtain the target photolithography pattern. Therefore, the control-specific algorithms corresponding to the target basic mask pattern are spliced ​​and combined to obtain a parallel light distribution shape control algorithm that can generate the target exposure pattern corresponding to the target photolithography pattern.

[0076] Specifically, when determining the target basic mask pattern in the target photolithography pattern, the basic mask pattern in the basic mask pattern database contained in the target photolithography pattern can be identified by image recognition technology based on the basic mask pattern database, and the identified basic mask pattern can be used as the target basic mask pattern corresponding to the target photolithography pattern.

[0077] In some embodiments, the step of “determining, by artificial intelligence, a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group” may include the following steps:

[0078] Obtaining a basic mask pattern;

[0079] Obtaining a photolithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator;

[0080] The relationship between the exposure and development results and the modulation parameters is established based on artificial intelligence to generate the control-specific algorithm.

[0081] Specifically, the specific generation process of the control-specific algorithm is as follows:

[0082] The first step is to obtain a basic photolithographic pattern, which is a basic photolithographic pattern commonly used in the photolithography process, such as a simple pattern such as a circle, a quadrilateral, a polygon, a five-pointed star, etc.

[0083] The second step is to form a basic lithographic pattern database by collecting information such as the lithography algorithm, exposure and development results under different spatial light modulator modulation parameters. The spatial light modulator modulation parameters include the on-off, light intensity, light phase and light power of each independent thin-film liquid crystal transistor array.

[0084] In the third step, AI uses a mechanical deep loop learning method to establish the relationship between the exposure and development results of the basic lithography pattern and the modulation parameters of the spatial light modulator to form a dedicated control algorithm. Specifically:

[0085] 1. If the spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, an iterative calculation is performed on the relationship between the on / off, energy, and phase parameters of the light passing through the arrayed transmissive liquid crystal spatial light modulator and entering the focusing lens and the exposure and development results of the photolithography pattern to ultimately form a dedicated control algorithm.

[0086] 2. If the spatial light modulator is an arrayed reflective liquid crystal spatial light modulator, the relationship between the reflection, energy and phase parameters of the light reflected from the arrayed reflective liquid crystal spatial light modulator and entering the focusing lens and the exposure and development results of the photolithography pattern is iteratively calculated to ultimately form a dedicated control algorithm.

[0087] 3. If the spatial light modulator is an arrayed digital micromirror device spatial light modulator, an iterative calculation is performed on the relationship between the reflection, energy and power parameters of the light reflected from the arrayed digital micromirror device spatial light modulator and entering the focusing mirror and the exposure and development results of the photolithography pattern to ultimately form a dedicated control algorithm.

[0088] Among them, mechanical deep recurrent learning is a method that combines deep learning and recurrent neural networks, that is, a method that combines deep learning and repeated iterations.

[0089] The independent thin film liquid crystal transistor array corresponds to the modulation unit of the arrayed spatial light modulator.

[0090] It should be noted that in this application, artificial intelligence picks up the pattern features of the target photolithography pattern and divides the target photolithography pattern into a basic mask pattern group in the basic mask pattern database according to the pattern features, and then calls the control-specific algorithm to iteratively generate the corresponding parallel light distribution shape control algorithm. The parallel light distribution shape control algorithm is used to control the on-off, energy, phase and power of the spatial light modulator according to the type of arrayed spatial light modulator and the photolithography pattern features to achieve the optimal photolithography result.

[0091] S130: Control the UV parallel light source to generate target UV parallel light.

[0092] S140 , controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light according to the parallel light distribution shape control algorithm to form a target preliminary shaped light beam.

[0093] The arrayed spatial light modulator is used to adjust the distribution shape, especially the edge shape, of the incident target UV parallel light to form the target preliminary shaped light beam.

[0094] S150 , shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam.

[0095] S160 , controlling the focusing mirror to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0096] It should be noted that the surface of the wafer is covered with photoresist. After the photoresist surface is exposed by the target exposure light beam, a target exposure pattern corresponding to the target photolithography pattern is generated.

[0097] From the above, it can be seen that the arrayed fly-eye lens composed of an arrayed spatial light modulator proposed in the embodiment of the present application replaces the traditional fly-eye lens with an arrayed spatial light modulator, and controls the on-off, energy, phase and power of the parallel light through artificial intelligence iterative generation of a parallel light distribution shape control algorithm, thereby achieving precise output of the distribution shape of the target light, avoiding the emission divergence angle being far greater than the theoretical design field of view requirement of the focusing mirror, reducing the assembly process requirements, and avoiding problems such as color deficiency and edge deficiency.

[0098] An embodiment of the present application further provides a storage medium storing a computer program. When the computer program runs on a computer, the computer is enabled to execute the method for adjusting the array light source of a lithography machine in any of the above embodiments.

[0099] For example, in some embodiments, when the above computer program is run on a computer, the computer performs the following steps:

[0100] Obtaining a target photolithographic pattern to be photolithographically processed;

[0101] determining a parallel light distribution shape control algorithm according to the target lithography pattern;

[0102] Controlling the UV parallel light source to generate target UV parallel light;

[0103] Controlling the arrayed spatial light modulator according to the parallel light distribution shape control algorithm to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped light beam;

[0104] shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam;

[0105] The focusing mirror is controlled to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern.

[0106] The specific implementation of the above operations can be found in the previous embodiments and will not be repeated here.

[0107] The storage medium may include a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0108] Since the instructions stored in the storage medium can execute the steps in any one of the photolithography machine light source array adjustment methods provided in the embodiments of the present application, the beneficial effects that can be achieved by any one of the photolithography machine light source array adjustment methods provided in the embodiments of the present application can be achieved. Please see the previous embodiments for details and will not be repeated here.

[0109] It should be noted that, for the arrayed adjustment method of the light source of the lithography machine according to the embodiment of the present application, ordinary testers in this field can understand that all or part of the process of implementing the arrayed adjustment method of the light source of the lithography machine according to the embodiment of the present application can be completed by controlling the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, such as in the memory of an electronic device, and executed by at least one processor in the electronic device. During the execution process, it may include the process of the embodiment of the arrayed adjustment method of the light source of the lithography machine.

[0110] The above is a detailed introduction to the lithography machine and parallel light control method provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photolithography machine, characterized in that: include: A UV parallel light source, wherein the UV parallel light source is used to generate UV parallel light; An arrayed spatial light modulator, the arrayed spatial light modulator is used to shape the distribution shape of the incident UV parallel light to form a preliminary shaped light beam; a mask plate, the mask plate being used to shape the distribution shape of the incident primary shaped light beam to form a secondary shaped light beam; A focusing mirror, used for focusing the secondary shaped light beam to form an exposure light beam; A processor, wherein the processor is connected to the UV parallel light source, the arrayed spatial light modulator, and the focusing mirror, and the processor is configured to: Obtaining a target photolithographic pattern to be photolithographically processed; determining a parallel light distribution shape control algorithm according to the target lithography pattern; Controlling the UV parallel light source to generate target UV parallel light; Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped beam according to the parallel light distribution shape control algorithm; shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam; Controlling the focusing mirror to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern; The processor is further configured to: dividing the target photolithographic pattern into target basic mask pattern groups; Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence; Generating the parallel light distribution shape control algorithm according to each of the control-specific algorithms; The processor is further configured to: Obtaining a basic mask pattern; Obtaining a photolithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator; The relationship between the exposure and development results and the modulation parameters is established based on artificial intelligence to generate the control-specific algorithm.

2. The lithography machine according to claim 1, characterized in that: The arrayed spatial light modulator is an arrayed transmissive liquid crystal spatial light modulator, which is arranged between the UV parallel light source and the mask plate. The UV parallel light source, the arrayed transmissive liquid crystal spatial light modulator and the mask plate are placed parallel to each other. The processor controls the arrayed transmissive liquid crystal spatial light modulator to directly inject the incident target preliminary shaped light beam into the mask plate.

3. The lithography machine according to claim 1, wherein: The arrayed spatial light modulator is an arrayed reflective liquid crystal spatial light modulator. The UV parallel light source is placed at a 90-degree angle to the mask plate. The arrayed reflective liquid crystal spatial light modulator is arranged between the UV parallel light source and the mask plate at a 45-degree angle. The processor controls the arrayed reflective liquid crystal spatial light modulator to rotate the incident target preliminary shaped light beam by 90 degrees and reflect it into the mask plate.

4. The photolithography machine according to claim 3, characterized in that: The lithography machine also includes a first heat sink, which is arranged on the back of the arrayed reflective liquid crystal spatial light modulator. The first heat sink converts the target preliminary shaped light beam that has not been reflected by the arrayed reflective liquid crystal spatial light modulator into heat energy and dissipates it.

5. The photolithography machine according to claim 1, characterized in that: The arrayed spatial light modulator is an arrayed digital micromirror device spatial light modulator. The UV parallel light source is placed at a 90-degree angle to the mask plate. The arrayed digital micromirror device spatial light modulator is arranged between the UV parallel light source and the mask plate at a 45-degree angle. The arrayed digital micromirror device spatial light modulator rotates the incident target preliminary shaped light beam by 90 degrees and reflects it into the mask plate.

6. The photolithography machine according to claim 5, characterized in that: The lithography machine also includes a second heat sink, which is arranged opposite to the arrayed digital micromirror device spatial light modulator. The second heat sink converts the target preliminary shaped light beam that does not enter the mask into heat energy and dissipates it.

7. A method for adjusting the array light source of a lithography machine, characterized in that: The photolithography machine includes a UV parallel light source for generating UV parallel light, an arrayed spatial light modulator for shaping the distribution shape of the incident UV parallel light to form a primary shaped beam, a mask for shaping the distribution shape of the incident primary shaped beam to form a secondary shaped beam, and a focusing lens for focusing the secondary shaped beam to form an exposure beam. The method includes: Obtaining a target photolithographic pattern to be photolithographically processed; determining a parallel light distribution shape control algorithm according to the target lithography pattern; Controlling the UV parallel light source to generate target UV parallel light; Controlling the arrayed spatial light modulator to shape the distribution shape of the incident target UV parallel light to form a target preliminary shaped beam according to the parallel light distribution shape control algorithm; shaping the incident target primary shaped beam according to the mask plate to form a target secondary shaped beam; Controlling the focusing mirror to focus the incident target secondary shaped light beam to form a target exposure light beam corresponding to the target photolithography pattern; Wherein, the method of determining a parallel light distribution shape control algorithm according to the target lithography pattern includes: dividing the target photolithographic pattern into target basic mask pattern groups; Determining a dedicated control algorithm for the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group through artificial intelligence; Generating the parallel light distribution shape control algorithm according to each of the control-specific algorithms; The control-specific algorithm for determining, by artificial intelligence, the arrayed spatial light modulator corresponding to each target basic mask pattern in the target basic mask pattern group includes: Obtaining a basic mask pattern; Obtaining a photolithography algorithm and exposure and development results of the basic mask pattern under different modulation parameters of an arrayed spatial light modulator; The relationship between the exposure and development results and the modulation parameters is established based on artificial intelligence to generate the control-specific algorithm.

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