Display panel, light sensing driving method thereof and display device

Abstract

The application provides a display panel and a light sensing driving method thereof, and a display device. The display panel comprises a display area and a non-display area surrounding or partially surrounding the display area; the display area comprises pixel units arranged in an array, transistor structures corresponding to sub-pixels in the pixel units, and a plurality of signal lines; wherein the transistor structure comprises a first electrode, a second electrode and a third electrode; the first ends of the plurality of signal lines are connected to the third electrodes of the transistor structures corresponding to at least one row of sub-pixels of the same color; the second ends of the plurality of signal lines extend to the non-display area; the non-display area comprises a driving unit connected to the second ends of the plurality of signal lines; the driving unit is used for detecting a first voltage value at a starting moment and a second voltage value at an ending moment of a non-display state of any frame of a sub-pixel in the pixel unit, and determining an ambient light type and / or an ambient light intensity according to the first voltage value and the second voltage value.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display and photosensitive technology, and in particular to a display panel, a photosensitive driving method thereof and a display device. BACKGROUND

[0002] With the continuous development of liquid crystal display technology, various intelligent display devices have higher and higher requirements for display screens. The existence of a photosensitive module can detect the intensity of external ambient light to adjust the display brightness of the display device. To meet market requirements and reduce costs, the current photosensitive LCD screen can replace the conventional silicon-based photosensitive module currently used in the whole machine. The current photosensitive module and its corresponding thin film transistor (TFT) need to be additionally set up, and are generally set up on the upper side of the display panel, i.e. between the display area and the non-display area.

[0003] However, the above setting requires an additional photosensitive module, which increases the width of the display panel frame and cannot achieve the expected detection of ambient light. Therefore, a design scheme is needed that can improve the accuracy of ambient light detection and effectively reduce the width of the display panel frame. SUMMARY

[0004] Therefore, the purpose of the present application is to provide a display panel, a photosensitive driving method thereof and a display device that overcome the above problems or at least partially solve the above problems.

[0005] To achieve the above purpose, the first aspect of the present application provides a display panel, comprising: a display area and a non-display area surrounding or partially surrounding the display area;

[0006] The display area comprises pixel units arranged in an array and first transistor structures corresponding to sub-pixels in the pixel units and a plurality of signal lines; wherein the first transistor structure comprises a first electrode, a second electrode and a third electrode; the first ends of the plurality of signal lines are respectively connected to the third electrodes of the first transistor structures corresponding to at least one row of sub-pixels of the same color, and the second ends of the plurality of signal lines extend to the non-display area.

[0007] The non-display area comprises a driving unit connected to the second ends of the plurality of signal lines.

[0008] Optionally, the sub-pixels in the pixel units comprise first sub-pixels, second sub-pixels and third sub-pixels.

[0009] The plurality of signal lines comprises a first signal line, a second signal line and a third signal line.

[0010] The first end of the first signal line is connected with the third electrode of the first transistor structure corresponding to at least one row of the first sub-pixel, and the second end is connected with the driving unit.

[0011] The first end of the second signal line is connected with the third electrode of the first transistor structure corresponding to at least one row of the second sub-pixel, and the second end is connected with the driving unit.

[0012] The first end of the third signal line is connected with the third electrode of the first transistor structure corresponding to at least one row of the third sub-pixel, and the second end is connected with the driving unit.

[0013] Optionally, the first sub-pixel, the second sub-pixel and the third sub-pixel connected with the driving unit are respectively located in different rows of pixel units.

[0014] Optionally, the display further comprises a second transistor structure and a fourth signal line arranged in the non-display area, wherein the second transistor structure comprises a first electrode, a second electrode and a third electrode.

[0015] The first end of the fourth signal line is connected with the third electrode of the second transistor structure, and the second end is connected with the driving unit.

[0016] The second transistor structure is provided with at least one shielding layer on the side facing the light-emitting direction.

[0017] Optionally, the display further comprises a fourth sub-pixel arranged in the display area, and the first transistor structure, the fourth signal line corresponding to the fourth sub-pixel, wherein the fourth sub-pixel is arranged in the sub-pixel array in the pixel unit, and the first end of the fourth signal line is connected with the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and the second end extends to the non-display area and is connected with the driving unit.

[0018] The fourth sub-pixel is black.

[0019] Optionally, the display further comprises a fourth sub-pixel, a fifth sub-pixel arranged in the display area, and the first transistor structure, the fourth signal line and the fifth signal line corresponding to the fourth sub-pixel and the fifth sub-pixel, respectively, wherein the fourth sub-pixel and the fifth sub-pixel are arranged in the sub-pixel interval array in the pixel unit,

[0020] The fourth sub-pixel and the fifth sub-pixel are arranged in the column of pixel units, and the fourth sub-pixel and the fifth sub-pixel are arranged in the row direction of the pixel unit.

[0021] The first end of the fourth signal line is connected with the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and the second end extends to the non-display area and is connected with the driving unit.

[0022] The first end of the fifth signal line is connected with the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and the second end extends to the non-display area and is connected with the driving unit.

[0023] The fourth sub-pixel is black, and the fifth sub-pixel is transparent.

[0024] Optionally, a fifth sub-pixel, a first transistor structure corresponding to the fifth sub-pixel, and a fifth signal line are arranged in the display area, and the fifth sub-pixel is arranged in the array of sub-pixels in the pixel unit; the first end of the fifth signal line is connected with the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and the second end extends to the non-display area and is connected with the driving unit.

[0025] The fifth sub-pixel is transparent.

[0026] Optionally, the second transistor structure is arranged on the side of the non-display area close to the driving unit.

[0027] Optionally, the first electrode of the first transistor structure is connected with a signal scanning line, and the second transistor structure and the sub-pixels in the pixel unit are simultaneously driven by the driving unit through the signal scanning line.

[0028] Optionally, the first electrode of the first transistor structure is connected with a signal scanning line, and the first transistor structure corresponding to the fourth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit in the same row.

[0029] Optionally, the first electrode of the first transistor structure is connected with a signal scanning line, and the first transistor structure corresponding to the fifth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit in the same row.

[0030] Optionally, the non-display area includes opposite first and second sides, the first signal line and the second signal line extend to the first side, and the third signal line extends to the second side.

[0031] Or the first signal line extends to the first side, and the second signal line and the third signal line extend to the second side.

[0032] In a second aspect, a display panel light sensing driving method is provided, which is suitable for the display panel of the first aspect, and the method comprises:

[0033] The driving unit is used to detect the first voltage value at the start time and the second voltage value at the end time of the non-display state of any frame of the sub-pixels in the pixel unit.

[0034] determine a first voltage difference according to the first voltage value and the second voltage value;

[0035] determine the ambient light intensity by using the first relationship curve of the voltage difference and the ambient light intensity and the first voltage difference;

[0036] determine the ambient light type by using the corresponding relationship between the voltage difference ratio of each sub-pixel in the pixel unit and the ambient light type and the first voltage difference.

[0037] Optionally, the method further comprises: detecting, by using the driving unit, a third voltage value at a start moment and a fourth voltage value at an end moment of a non-display state of the sub-pixel corresponding to the second transistor structure in the pixel unit in a corresponding frame;

[0038] determine a second voltage difference according to the third voltage value and the fourth voltage value;

[0039] determine the temperature interference by using a second relationship curve of the second voltage difference and the temperature;

[0040] determine a third voltage difference by using a difference between the first voltage difference and the second voltage difference;

[0041] determine the final ambient light intensity by using the first relationship curve of the voltage difference and the ambient light intensity and the third voltage difference;

[0042] determine the final ambient light type by using the corresponding relationship between the voltage difference ratio of each sub-pixel and the ambient light type and the third voltage difference;

[0043] determine the brightness of the display panel according to the final ambient light type and the final ambient light intensity.

[0044] In a third aspect, the present application provides a display device, characterized in that the display device comprises the display panel of the first aspect.

[0045] As can be seen from the above, the display panel and the light sensing driving method thereof and the display device provided by the present application first use the sub-pixel in the pixel unit of the display area and the corresponding transistor structure thereof as a light sensing TFT module, without the need to additionally design a light sensing TFT module at the frame of the display panel, thereby saving the process.

[0046] Secondly, directly using the sub-pixel in the pixel unit of the display area and the corresponding transistor structure thereof as a light sensing TFT module reduces the space occupation of the additional design of the light sensing TFT module, reduces the frame width, and realizes narrow frame.

[0047] Third, the sub-pixel in the pixel unit of the display area and its corresponding transistor structure are used as a light-sensing TFT module. The transistor structure corresponding to the sub-pixel is not blocked by the ink layer, and can also receive the irradiation of ambient light at a large viewing angle, so as to determine the ambient light intensity at a large viewing angle.

[0048] Fourth, the fourth sub-pixel and its corresponding transistor structure are used as a reference group, and are arranged in a non-display area. An optical shielding layer is arranged on the side of the display panel in the light-emitting direction. The relationship between the temperature and the leakage current value is determined, the influence of ambient light is eliminated, and the relationship between the ambient light and the leakage current value after the influence of temperature is eliminated is determined by subtracting the leakage current value of the transistor corresponding to the fourth sub-pixel from the leakage current value of the transistor corresponding to the sub-pixel in the pixel unit.

[0049] The above description is only a summary of the technical solutions of the present application. In order to more clearly understand the technical means of the present application, the contents of the specification can be implemented, and in order to make the above and other purposes, characteristics and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described below. BRIEF DESCRIPTION OF DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the present application or related technical solutions, the drawings needed in the embodiments or related technical description will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0051] Figure 1 It is a side view of the light-sensing TFT module in the related art;

[0052] Figure 2 It is a top view of the light-sensing TFT module in the related art;

[0053] Figure 3 It is a front view of the light-sensing TFT module in the related art;

[0054] Figure 4 It is a schematic diagram of the circuit connection of the light-sensing TFT module in the related art;

[0055] Figure 5a It is a data graph of the relationship between the leakage current value and the ambient light intensity detected by the black light-sensing TFT module in the related art;

[0056] Figure 5b It is a curve graph of the relationship between the leakage current value and the ambient light intensity detected by the black light-sensing TFT module in the related art;

[0057] Figure 6 It is a viewing angle blocking schematic diagram of the light-sensing TFT module in the related art;

[0058] Figure 7 A schematic diagram of the amount of ambient light received by the light-sensing TFT module in the related art changes with the viewing angle;

[0059] Figure 8 A schematic diagram of the upper frame wiring of the light-sensing TFT module in the related art;

[0060] Figure 9 A schematic diagram of the left and right frame wiring of the light-sensing TFT module in the related art;

[0061] Figure 10 A front view of the display panel of the embodiment of the present application;

[0062] Figure 11 A cross-sectional view of the display panel of the embodiment of the present application;

[0063] Figure 12 A waveform diagram of the switching signal of a certain sub-pixel and the corresponding transistor structure of the embodiment of the present application;

[0064] Figure 13a A schematic diagram of the position of the second transistor structure in the non-display area of the embodiment of the present application;

[0065] Figure 13b A schematic diagram of the position of the corresponding second transistor structure; Figure 13a A schematic diagram of the position of the corresponding second transistor structure;

[0066] Figure 14a A data graph between the size of the leakage current detected by the corresponding transistor structure of the second transistor structure in the non-display area and the intensity of the ambient light in the embodiment of the present application;

[0067] Figure 14b A curve graph between the size of the leakage current detected by the corresponding transistor structure of the second transistor structure in the non-display area and the intensity of the ambient light in the embodiment of the present application;

[0068] Figure 15 A cross-sectional view of a second display panel of the embodiment of the present application;

[0069] Figure 16 A cross-sectional view of a third display panel of the embodiment of the present application;

[0070] Figure 17 A cross-sectional view of a fourth display panel of the embodiment of the present application;

[0071] Figure 18 A flowchart of the light-sensing driving method of the display panel of the embodiment of the present application;

[0072] Figure 19 A schematic diagram of the display device of the embodiment of the present application. DETAILED DESCRIPTION

[0073] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0074] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0075] As described in the background section above, in related technologies, a photosensitive TFT module 100 is disposed on the upper side of the display panel, between the display area and the non-display area. Specifically, refer to... Figures 1-4 As shown, four light-sensitive TFT modules 100 are designed on the thin film transistor substrate 8 (TFT glass), namely four groups of transistors 6: red (R), green (G), blue (B), and black (D). Among them, in the R, G, and B groups, the light-shielding layer 5 (Black matrix, BM) on the light-emitting side of the three groups of TFTs is hollowed out and then filled with red color film 71, green color film 72, and blue color film 73 respectively. The BM on the black group transistor 6 is not hollowed out. The rest is the same as the current TFT-LCD (Thin Film Transistor Liquid Crystal Display) panel. A lower polarizer 9 is provided on the side of the TFT facing the backlight module 10, and a color film substrate 4, an upper polarizer 3, an ink layer 2, and a cover plate 1 are stacked in sequence on the side away from the backlight module.

[0076] The specific principle of the light sensing function is as follows: when the external environment light passes through the light-emitting side of the display panel and irradiates the light sensing TFT, different proportions of red light, green light and blue light in a light source irradiate the R, G and B light sensing TFTs, the R light sensing TFT receives the red light of the light source, the G light sensing TFT receives the green light of the light source, and the B light sensing TFT receives the blue light of the light source. When any light sensing TFT switch is in the off state (i.e., the gate of the light sensing TFT switch circuit is not powered), the drain of the light sensing TFT will generate a certain leakage current when the source of the light sensing TFT switch provides a certain voltage. The relationship between the external environment light and the drain current is determined by testing the size of the drain current. However, the light sensing TFT itself does not know the relationship between the external environment and the drain current value, and needs the light sensing module to collect the size of the drain current of a certain light source under different intensities in advance to generate a relationship curve of the light source under different light intensities and the size of the drain current. However, in actual application scenarios, there are many types of external environment light, and the R, G and B color proportions of the light source collected in advance are different, so the actual external environment light needs to be corrected to the light source of the light intensity and drain current relationship curve collected in advance. The current correction algorithm is as follows: 1. Collect the size of the drain current of a certain light source under different intensities in advance to generate a relationship curve of the light source under different light intensities and the size of the drain current; 2. Collect the size of the drain current of the red R light sensing TFT and the blue B light sensing TFT of different light sources in advance. By collecting the drain current of the R light sensing TFT or the drain current of the B light sensing TFT, the type of light source (and the color temperature of the external environment light) can be determined; 3. Collect the size of the drain current of the green G light sensing TFT of different light sources under a certain light intensity in advance. Combine the light intensity and drain current relationship curve collected in step 1 with different light sources to determine the light intensity coefficient of different light sources, i.e., the relationship coefficient of different light sources and the light source collected in advance under a certain light intensity. The above three values collected in advance can correct the external environment light to the light intensity and drain current relationship curve of the light source collected in advance, and realize the detection of the light intensity and type of the actual external environment light by the light sensing TFT.

[0077] But in the above detection mode, the relationship between the light intensity of the ambient light and the drain current is determined at a certain fixed temperature. The light sensing TFT drain current is affected by the temperature in addition to the ambient light. Therefore, the temperature effect on the light sensing TFT is removed, only the ambient light effect is retained, so as to realize the adjustment of the display panel brightness. In this design, a black D light sensing TFT module is designed. The TFT corresponding position is not hollowed out on the BM, but the TFT is arranged on the BM. The relationship between the difference between the external temperature and a certain fixed ambient temperature is determined by shielding the ambient light by the BM and collecting the corresponding TFT drain current. The drain current of the RGB three groups of light sensing TFTs is subtracted from the drain current of the D group of light sensing TFTs. The final drain current obtained theoretically completely avoids the influence of the ambient temperature on the RGB three groups of light sensing TFTs. Therefore, the function of the black light sensing TFT module is to remove the correction parameters of the environmental temperature effect.

[0078] In the related art, although the above setting can minimize the space occupation of the light sensing TFT module and reduce the width of the upper frame of the display panel, the ink located in the non-display area of the display panel can not block the light sensing TFT from receiving the external ambient light, and also will not affect the design of the existing display panel, but there are still problems.

[0079] First, reference Figure 1 , Figure 3 , Figure 4 , Figure 8 and Figure 9 As shown, compared with the display panel without the light sensing module, the frame width of the display panel is increased due to the existence of the light sensing TFT module. Due to the existence of the wire, the four transistors in the four groups of light sensing TFT modules share a gate wire 11, a source wire 12, a drain wire 13 of the R, G and B three groups of TFTs, a drain wire 14 of the D group of transistors and a common electrode layer wire 15 between the display area and the non-display area, which increases the upper frame of the display panel. The specific distance is shown in Figure 8 A, the left and right side frames are also increased. Due to the corresponding gate wire, source wire and drain wire, the frame is also increased. The specific distance is shown in Figure 9The distance between the display panel display area and the non-display area without light sensing function is 0.2 mm, the process part of ink does not block the light sensing TFT, and the light sensing TFT is arranged in the part, so the upper frame of the display panel needs to be extended by at least 0.13 mm, the silk screen tolerance is ±0.1 mm (single side ±0.05 mm), the cover plate bonding precision is ±0.1 mm, the ink windowing to the non-display area has a tolerance of ±0.07 mm, and therefore the cumulative tolerance C=sqrt(0.05*0.05+0.1*0.1+0.07*0.07)=0.132, so in the light sensing TFT module design in the related art, compared with the light sensing module, the upper frame width is increased, for example, Figure 1 The size of A in Figure 8 is 0.37 mm, and the gate, source and drain lines of the light sensing TFT are also increased on the left and right sides, and the size of B in Figure 10 is increased by a width of about 45 um on the left and right frames.

[0080] Second, since the light sensing TFT module is arranged between the display area and the non-display area, according to the spacing requirement between the display area and the non-display area, when the ambient light from the non-display area side close to the light sensing TFT module 100 and the light sensing TFT module in the vertical direction of the display panel has an angle greater than 30°, the ink layer 2 in the non-display area will block the ambient light from shining on the light sensing TFT module, resulting in a serious attenuation of the light intensity detected by the thin film transistor 6 of the light sensing TFT module, which cannot meet the effective light sensing detection; for example, as shown in Figure 6 and Figure 7 , when the ambient light along the vertical angle of the display panel increases, that is, the angle α increases to a certain angle (30°-40°), due to the blocking of the non-display area ink layer 2 to the light, the light directly shining on the thin film transistor 6 under a larger viewing angle is insufficient, and the light sensing TFT receives a sudden decrease in light intensity, that is, the FOV test does not meet the specification requirement of greater than 50°, and the change of the light sensing TFT test angle and the light intensity curve is not a smooth transition, but a sudden decrease in light sensing performance after a certain angle, as shown in Figure 7 , the ambient light received by the screen vertically downward.

[0081] Third, referring to Figure 2 , Figure 3As shown, the current light sensing TFT module has four groups, i.e., red, green, blue and black groups. The black matrix (BM) on the color film of the black group is not hollowed out, and the BM of the other three groups is hollowed out and filled with color film of the corresponding color. The BM in the black group blocks the ambient light from shining on the light sensing TFT in the black group, so that the light sensing TFT in the black group is not affected by the ambient light and is only affected by the temperature. However, the BM cannot completely block the ambient light due to the material characteristics, which causes the black light sensing TFT module to be affected by both the ambient light and the temperature, and cannot accurately provide a reference for the temperature effect for the RGB three groups of light sensing TFT modules, resulting in a decrease in the accuracy of the ambient light detected by the RGB three groups of light sensing TFT modules. For example, in Figure 5a and Figure 5b , the drain current of the black light sensing TFT module is detected by using three groups of ambient light. As the light intensity increases, the drain current increases accordingly.

[0082] Fourthly, additional TFT light sensing module settings are required, which increases the process.

[0083] Therefore, the purpose of the present application is to overcome or at least partially overcome the above problems, and to provide a display panel scheme capable of reducing additional light sensing TFT settings, improving the detection accuracy of external light intensity, and reducing the frame.

[0084] Reference Figure 10 , Figure 11 and Figure 12 As shown, the display panel 200 provided by the embodiments of the present application includes a display area and a non-display area 32 surrounding or partially surrounding the display area. The display area includes an array of pixel units 33 and a first transistor structure 34 corresponding to the sub-pixels in the pixel units 33, as well as a plurality of signal lines. The first transistor structure 34 includes a first electrode, a second electrode and a third electrode. The first ends of the plurality of signal lines are connected to the third electrodes of the first transistor structures 34 corresponding to at least one row of sub-pixels of the same color, and the second ends of the plurality of signal lines extend to the non-display area 32. The non-display area 32 includes a driving unit 35 connected to the second ends of the plurality of signal lines. The driving unit 35 is used to detect a first voltage value at the start time and a second voltage value at the end time of the non-display state of any frame of the sub-pixels in the pixel units 33, and determine the type and / or intensity of the ambient light according to the first voltage value and the second voltage value.

[0085] With the above settings, the sub-pixels in the pixel unit 33 and their corresponding first transistor structures 34 are directly used as the photosensitive TFT module. As the first transistor structure 34 corresponding to the sub-pixel, each first transistor structure 34 includes a first electrode, a second electrode and a third electrode. For example, the first electrode can be the gate, the second electrode can be the source, and the third electrode can be the drain. The first electrode can also be the source, the second electrode can also be the drain, and the third electrode can also be the gate. This application does not make specific limitations here.

[0086] In some exemplary embodiments, the first electrode is the gate, the second electrode is the source, and the third electrode is the drain.

[0087] When the sub-pixels in the display area are displayed normally, a frame consists of two parts: the display time (n rows of sub-pixels turn on sequentially for display) and the non-display time (such as the touch time, when all the first transistor structures 34 corresponding to the sub-pixels are in the off state). The gate signal of the first transistor structure 34 corresponding to each row of sub-pixels is pulled high sequentially. Since the sub-pixels in the same column are connected through the same source signal line, the source signal output of the first transistor structure 34 of each column of sub-pixels is synchronized to output the voltage (positive or negative voltage) required by the corresponding sub-pixel. For any sub-pixel, when the gate signal controlling the switching of the first transistor structure 34 of the sub-pixel is turned on, the source signal voltage is charged to the sub-pixel. When the gate signal of the next row of the sub-pixel is turned on, the gate signal of the corresponding row of the sub-pixel is turned off, and the source signal voltage of the corresponding column will not be charged to the sub-pixel. The voltage of the sub-pixel is locked to the charged voltage, that is, the drain of the first transistor structure 34 corresponding to the sub-pixel.

[0088] In some embodiments, in order to achieve effective voltage acquisition, this application acquires the drain voltage of at least one row of sub-pixels of the same color, so as to avoid the voltage of the third electrode of the first transistor structure 34 corresponding to a single sub-pixel being too small to effectively detect the voltage value.

[0089] In some embodiments, reference Figure 11 As shown, the sub-pixels within pixel unit 33 include a first sub-pixel 331, a second sub-pixel 332, and a third sub-pixel 333. Multiple signal lines include a first signal line 341, a second signal line 342, and a third signal line 343.

[0090] The first end of the first signal line 341 is connected to the third electrode of the first transistor structure 34 corresponding to at least one row of first sub-pixels 331, and the second end is connected to the driving unit 35.

[0091] The first end of the second signal line 342 is connected to the third electrode of the first transistor structure 34 corresponding to at least one row of second sub-pixels 332, and the second end is connected to the driving unit 35.

[0092] The first end of the third signal line 343 is connected with the third electrode of the first transistor structure 34 corresponding to at least one row of the third sub-pixels 333, and the second end is connected with the driving unit 35.

[0093] Optionally, the first sub-pixel 331 can be a red sub-pixel, the second sub-pixel 332 can be a green sub-pixel, and the third sub-pixel 333 can be a blue sub-pixel. Similarly, the first sub-pixel 331 can be a green sub-pixel, the second sub-pixel 332 can be a blue sub-pixel, and the third sub-pixel 333 can be a red sub-pixel. The embodiments of the present application are not limited specifically.

[0094] In some exemplary embodiments, the first sub-pixel 331 is a red sub-pixel (R), the second sub-pixel 332 is a green sub-pixel (G), and the third sub-pixel 333 is a blue sub-pixel (B).

[0095] After the above-mentioned locking of the corresponding sub-pixel to the charged voltage, at the starting moment of the non-display state within any frame, the driving unit 35 detects the first voltage value V1 of the third electrode of the first transistor structure 34 corresponding to R, G and B once again, and at the ending moment, the driving unit 35 detects the second voltage value V2 of the third electrode of the first transistor structure 34 corresponding to R, G and B once again. The first voltage difference AV1 of the first voltage value and the second voltage value is the leakage size of the third electrode of the first transistor structure 34 corresponding to the sub-pixel (at least one row of R pixels or B pixels or G pixels) from the starting moment to the ending moment within any frame in the non-display state. When the ambient light intensity changes, the size of the two voltage differences changes correspondingly. By determining the relationship curve between the voltage difference and the ambient light intensity in advance, the current ambient light intensity can be determined by using the first voltage difference, so as to adjust the display brightness of the display panel 200.

[0096] It can be understood that there are three first voltage values, which are the voltage values of the third electrodes of the first transistor structures 34 of the R, G and B groups of sub-pixels at the starting moment of the non-display state. Similarly, there are also three second voltage values, which are the voltage values of the third electrodes of the first transistor structures 34 of the R, G and B groups of sub-pixels at the ending moment of the non-display state. Correspondingly, there are also three first voltage differences, and the proportion of the three first low voltage differences can determine the type of ambient light.

[0097] It should be noted that a backlight module also exists in the display panel 200. The light emitted by the backlight module will also illuminate the sub-pixels. However, since the current of the backlight module of the display panel 200 is determined, the backlight brightness is also determined. It is determined in advance that there is no ambient light and only the light from the backlight module illuminates the sub-pixels. The voltage values ​​of the third electrode of the corresponding first transistor structure 34 at the beginning and end of the non-display state are used to determine the leakage current value when only the backlight illuminates the sub-pixels. The leakage current value is obtained by subtracting the first voltage difference from the leakage current value. The difference is the leakage current value caused by only ambient light under the condition of eliminating the influence of backlight.

[0098] Meanwhile, in this embodiment, the sub-pixels of pixel unit 33 and the corresponding first transistor structure 34 are directly used as the photosensitive TFT module, avoiding the need for an additional photosensitive TFT module, reducing space occupation, and reducing bezel width. With ambient light illuminating one side of the display panel 200 in the light-emitting direction, effective ambient light can be collected from any viewing angle, avoiding the inability to effectively determine the ambient light intensity at large viewing angles. Furthermore, compared to related technologies, no additional gate lines and source lines are required for the left and right bezels, similarly reducing the width of the left and right bezels.

[0099] In some embodiments, reference Figure 11 As shown, the first sub-pixel 331, the second sub-pixel 332, and the third sub-pixel 333, which are connected to the driving unit 35, are located in pixel units 33 in different rows.

[0100] The pixel unit 33 configured for the array includes three types of sub-pixels: R, G, and B. Correspondingly, the sub-pixels are also arrayed, utilizing first sub-pixels 331, second sub-pixels 332, and third sub-pixels 333 distributed in different rows. For example, first sub-pixel 331 is selected from the first sub-pixel 331 in the first row, second sub-pixel 332 is selected from the second sub-pixel 332 in the second row, and third sub-pixel 333 is selected from the third sub-pixel 333 in the third row. When routing the first signal line 341, second signal line 342, and third signal line 343, the inter-row routing of sub-pixels in different rows only requires one additional signal line (either the first signal line 341, the second signal line 342, or the third signal line 343), which does not significantly affect the number of sub-pixels and therefore does not affect the display uniformity and resolution of the display panel 200.

[0101] For example, if the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 connected with the driving unit 35 are all the first transistor structures 34 corresponding to the second row of sub-pixels, the first signal line 341, the second signal line 342 and the third signal line 343 need to be arranged between the second row of sub-pixels and the third row of sub-pixels or between the second row of sub-pixels and the first row of sub-pixels, which affects the uniformity of the arrangement between the row of sub-pixels and other rows of sub-pixels and affects the display quality.

[0102] In some exemplary embodiments, if the leakage current of only one row of sub-pixels of the same color cannot be effectively collected, the leakage current of multiple rows of sub-pixels of the same color can be collected. For example, the leakage current of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first row and the second row is detected by using the first signal line 341, the leakage current of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the third row and the fourth row is detected by using the second signal line 342, and the leakage current of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the fifth row and the sixth row is detected by using the third signal line 343. Alternatively, the leakage current of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first row and the fourth row is detected by using the first signal line 341, the leakage current of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the second row and the fifth row is detected by using the second signal line 342, and the leakage current of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the third row and the sixth row is detected by using the third signal line 343. Alternatively, the leakage current of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first row and the N-2th row is detected by using the first signal line 341, the leakage current of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the second row and the N-1th row is detected by using the second signal line 342, and the leakage current of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the third row and the Nth row is detected by using the third signal line 343, where N is the total number of rows of sub-pixels, i.e., the resolution number of the display panel 200. The connection mode of the multiple rows of sub-pixels of the same color and the driving unit 35 is not specifically limited herein as long as the above-described effects can be achieved.

[0103] In some embodiments, with reference to Figure 13a , Figure 13bAs shown, the display panel further comprises a second transistor structure 36 disposed in the non-display area 32, and a fourth signal line 345, a first end of the fourth signal line 345 being connected to a third electrode of the second transistor structure 36 corresponding to the fourth sub-pixel 334, and a second end of the fourth signal line 345 being connected to the driving unit 35, the driving unit 35 being configured to detect a third voltage value at a start time and a fourth voltage value at an end time in a non-display state in a frame corresponding to the sub-pixel in the pixel unit 33, and determine a temperature disturbance according to the third voltage value and the fourth voltage value; and the second transistor structure 34 is provided with at least one shielding layer on a side facing the light emitting direction.

[0104] In the embodiment, the second transistor structure 36 is used as a control group to eliminate the influence of temperature on the light-sensing TFT module. The second transistor structure 36 is disposed in the non-display area 32, and in the non-display area 32, the second transistor structure 36 is free of a backlight module on a side facing the backlight direction, thereby avoiding the influence of the backlight module on the leakage of the light-sensing TFT module. As shown in Figure 14a and Figure 14b In the embodiment, the influence of ambient light on the leakage of the second transistor structure 36 is almost negligible. At least one light shielding layer is disposed on a side of the fourth sub-pixel 334 facing the light emitting direction, thereby completely eliminating the influence of ambient light on the second transistor structure 36, and only using the second transistor structure 36 to detect the leakage of the second transistor structure 36 caused by temperature.

[0105] The temperature threshold of the second transistor structure 36 is determined in advance, i.e., at the temperature, the second transistor structure 36 does not leak. Then, the third voltage value V3 at the start time and the fourth voltage value V4 at the end time in a non-display state in a frame corresponding to the sub-pixel in the pixel unit 33 are used to determine the relationship between the difference between the current ambient temperature and the temperature threshold and the leakage size by calculating a second voltage difference AV2 between the third voltage value and the fourth voltage value. The first difference AV1 between the first voltage difference AV1 and AV2 is used to accurately determine the relationship between the ambient light intensity and the leakage size, thereby eliminating the influence of ambient temperature on the leakage of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 in a non-display state from the start time to the end time.

[0106] In some embodiments, the at least one light shielding layer comprises an ink layer.

[0107] In some embodiments, the second transistor structure 36 is disposed on a side of the non-display area 32 close to the driving unit 35. For example, as shown in Figure 13a , Figure 13bAs shown, the second transistor structure 36 is arranged at the silver paste point 350 on the lower side of the display panel 200 and the blank area of the ID code of the display panel 200, so that the common electrode layer, the protective glue 51, the silicone glue 52, and the black ink 53 as the light shielding layer are arranged above the second transistor structure 36, thereby effectively shielding the ambient light and reducing the influence of the ambient light on the light-sensing TFT module of the reference group. Meanwhile, the position is located on the side of the non-display area 32 close to the driving unit 35, and the wiring of the fourth signal line 345 and the wiring of the gate line and the source line of the second transistor structure 36 occupy less space.

[0108] In some optional embodiments, the reference Figure 15 As shown, the display panel 200 further includes the fourth sub-pixel 334 arranged in the display area, the first transistor structure 34 corresponding to the fourth sub-pixel 334, and the fourth signal line 345. The fourth sub-pixel 334 is arranged in the sub-pixel array in the pixel unit 33. The first end of the fourth signal line 345 is connected to the third electrode of the first transistor structure 34 corresponding to the fourth sub-pixel 334, and the second end extends to the non-display area 32 and is connected to the driving unit 35. The fourth sub-pixel 334 is black.

[0109] In order to simplify the process, the fourth sub-pixel 334 is also arranged as a pixel in the array with the first sub-pixel 331, the second sub-pixel 332, and the third sub-pixel 333. During the process of the first sub-pixel 331, the second sub-pixel 332, and the third sub-pixel 333, the light shielding layer at the positions corresponding to the first sub-pixel 331, the second sub-pixel 332, and the third sub-pixel 333 is hollowed out. During the deposition of different color filter films, the light shielding layer at the position corresponding to the fourth sub-pixel 334 is reserved. The light shielding layer is used as the fourth sub-pixel 334, and the position corresponding to the first transistor structure 34 of the fourth sub-pixel 334 is reserved. The first signal line 341, the second signal line 342, the third signal line 343, and the fourth signal line 345 are used to realize the connection between the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333, and the fourth sub-pixel 334 and the driving unit 35. Meanwhile, the fourth sub-pixel 334 and the first transistor structure 34 corresponding thereto are used as the reference group to determine the relationship between the ambient light and the leakage current. The specific principle is the same as that of the above-mentioned embodiments, which will not be described here.

[0110] Although the shading layer as the fourth sub-pixel 334 cannot shield all the ambient light, the leakage of the corresponding transistor structure 34 is affected by the ambient light, but the degree of influence is small. At the same time, compared with the related art, the fourth sub-pixel 334 and the corresponding first transistor structure 34 do not need to be additionally arranged, and the frame width is saved. The first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are not shielded at a large viewing angle, and can all realize the collection of the ambient light by using the leakage size of the third electrode of the corresponding first transistor structure 34 to determine the ambient light intensity, and respectively use the leakage current size of the third electrode of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 corresponding to the first transistor structure 34 to determine the proportion of red light, green light and blue light in the ambient light, so as to determine the type of the ambient light.

[0111] In some optional embodiments, referring to FIG. 1, the display panel 30 further includes a fifth sub-pixel 335 and a fifth signal line 346 corresponding to the fifth sub-pixel 335, and the fifth sub-pixel 335 is arranged in the display area 31. Figure 17 The first end of the fifth signal line 346 is connected with the third electrode of the first transistor structure 34 corresponding to the fifth sub-pixel 335, and the second end extends to the non-display area 32 and is connected with the driving unit 35.

[0112] In this embodiment, in order to simplify the process, the fifth sub-pixel 335 is also directly arranged as a pixel with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 in an array. During the process of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the light shielding layer corresponding to the positions of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is hollowed out. During the deposition of different color filter films, the light shielding layer corresponding to the position of the fifth sub-pixel 335 is hollowed out, and no deposition of any filter film is performed. The transparent area of the hollowed-out light shielding layer is directly used as the fifth sub-pixel 335. At the same time, the position retains the first transistor structure 34 corresponding to the fifth sub-pixel 335. The first signal line 341, the second signal line 342, the third signal line 343 and the fifth signal line 346 are used to realize the connection between the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fifth sub-pixel 335 and the driving unit 35. The transparent state of the fifth sub-pixel 335 determines the relationship between the ambient light intensity and the leakage size of the third electrode of the corresponding first transistor structure 34, that is, the ambient light intensity is determined by the leakage size. At the same time, the leakage size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is used to determine the proportion of red light, green light and blue light in the ambient light, so as to determine the type of ambient light.

[0113] Compared with the related art, the light sensing TFT module does not need to be additionally arranged, the frame width is saved, and the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fifth sub-pixel 335 are not blocked at a large viewing angle. The leakage size of the third electrode of the corresponding first transistor structure 34 can be used to collect ambient light, determine the type and intensity of ambient light. Further, the fifth sub-pixel 335 is used as a transparent pixel, which improves the display brightness of the display panel 200.

[0114] In some optional embodiments, with reference to Figure 16The display region further includes a fourth sub-pixel 334, a fifth sub-pixel 335, and a first transistor structure 34 corresponding to the fourth sub-pixel 334 and the fifth sub-pixel 335, respectively, and a fourth signal line 345 and a fifth signal line 346. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in an array of sub-pixel intervals in the pixel unit 33. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in the column of the pixel unit 33. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in intervals along the row direction of the pixel unit 33. The first end of the fourth signal line 345 is connected to the third electrode of the first transistor structure 34 corresponding to the fourth sub-pixel 334. The second end of the fourth signal line 345 extends to the non-display region 32 and is connected to the driving unit 35. The first end of the fifth signal line 346 is connected to the third electrode of the first transistor structure 34 corresponding to the fifth sub-pixel 335. The second end of the fifth signal line 346 extends to the non-display region 32 and is connected to the driving unit 35. The fourth sub-pixel 334 is black, and the fifth sub-pixel 335 is transparent.

[0115] In this embodiment, in order to simplify the process, the fourth sub-pixel 334 and the fifth sub-pixel 335 are directly arranged as sub-pixels with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 in an array. In order to avoid too much impact on the resolution of the display panel 200, the fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in an array with the sub-pixels in the pixel unit 33. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in the column of the pixel unit 33 and in the row direction of the pixel unit 33. In the process of manufacturing the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the light shielding layer corresponding to the positions of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is hollowed out. Different color filter films are deposited respectively. In this process, the light shielding layer corresponding to the position of the fourth sub-pixel 334 is retained to serve as the fourth sub-pixel 334. At the same time, the first transistor structure 34 corresponding to the fourth sub-pixel 334 is retained at the position. The light shielding layer corresponding to the position of the fifth sub-pixel 335 is hollowed out, and no filter film is deposited. The transparent area of the hollowed-out light shielding layer is directly used as the fifth sub-pixel 335. At the same time, the first transistor structure 34 corresponding to the fifth sub-pixel 335 is retained at the position. The first signal line 341, the second signal line 342, the third signal line 343, the fourth signal line 345 and the fifth signal line 346 are used to realize the connection between the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333, the fourth sub-pixel 334 and the fifth sub-pixel 335 and the driving unit 35. The transparent state of the fifth sub-pixel 335 is used to determine the relationship between the ambient light intensity and the leakage size of the third electrode of the corresponding first transistor structure 34, that is, to determine the ambient light intensity by the leakage size. The fourth sub-pixel 334 and the corresponding first transistor structure 34 are used as a control group to determine the relationship between the ambient light and the leakage size. The specific principle is the same as that of the above-mentioned embodiment, which will not be described here. The leakage size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is used to determine the proportion of red light, green light and blue light in the ambient light, so as to determine the type of the ambient light.

[0116] Compared with the related art, the light sensing TFT module is not additionally arranged, the frame width is saved, and the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333, the fourth sub-pixel 334 and the fifth sub-pixel 335 are not blocked at a large viewing angle. The leakage size of the third electrode of the corresponding first transistor structure 34 is used to realize the collection of the ambient light and determine the type and intensity of the ambient light.

[0117] In some embodiments, the first electrode of the first transistor structure 34 is connected with a signal scanning line 347, and the second transistor structure 36 is driven by the driving unit 35 at the same time as the sub-pixels in the pixel unit 33 by using the signal scanning line 347. For example, the signal scanning line 347 is a signal line connected with the gate electrode.

[0118] In the present embodiment, when the second transistor structure 36 is separately arranged in the non-display area 32, the second transistor structure 36 can be simultaneously driven by the corresponding transistor structures of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, so that the intensity of the ambient light at the current time can be accurately detected, and the accuracy of collecting the intensity of the ambient light can be improved.

[0119] In some embodiments, the first electrode of the first transistor structure 34 is connected with a signal scanning line 347, and the fourth sub-pixel 334 shares the signal scanning line 347 with the sub-pixels in the same row of pixel units 33.

[0120] In the present embodiment, when the fourth sub-pixel 334 is arranged in an array with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the first electrode of the first transistor structure 34 corresponding to each row of the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fourth sub-pixel 334 is connected with the same signal scanning line 347, and the first electrode of the first transistor structure 34 corresponding to the fourth sub-pixel 334, the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is driven by the same scanning signal line. In the preparation of the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the corresponding first transistor structure 34, the preparation of the fourth sub-pixel 334 and the corresponding first transistor structure 34 is completed at the same time. The first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fourth sub-pixel 334 in the same row is directly driven by the same signal scanning line 347, and the process flow is saved.

[0121] In some embodiments, the first electrode of the first transistor structure 34 is connected with a signal scanning line 347, and the fifth sub-pixel 335 shares the signal scanning line 347 with the sub-pixels in the same row of pixel units 33.

[0122] As described in the above embodiment, the preparation of the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the corresponding first transistor structure 34 is completed at the same time as the preparation of the fifth sub-pixel 335 and the corresponding first transistor structure 34. The first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fifth sub-pixel 335 in the same row correspond to the first transistor structure 34 which is directly driven by the same signal scanning line 347, thereby saving the process flow.

[0123] In some embodiments, referring to Figure 11 As shown, the non-display area 32 includes opposite first and second sides, the first signal line 341 and the second signal line 342 extend to the first side, and the third signal line 343 extends to the second side.

[0124] Or the first signal line 341 extends to the first side, and the second signal line 342 and the third signal line 343 extend to the second side.

[0125] In this embodiment, the first side can be the left side frame of the display panel 200, and the second side can be the right side frame of the display panel 200, or the first side can be the right side frame of the display panel 200, and the second side can be the left side frame of the display panel 200.

[0126] The first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 and the corresponding first transistor structure 34 are all arranged in the display area. Correspondingly, the first signal line 341, the second signal line 342 and the third signal line 343 need to extend to the non-display area 32 to connect the driving unit 35. If the first signal line 341, the second signal line 342 and the third signal line 343 all extend to one side, the number of wirings on the side increases, causing the width of the side frame to increase. For example, if they all extend to the first side, the number of wirings on the first side increases, causing the width of the first side frame to increase. If the second side increases the width of the frame for symmetry, it causes waste of resources, and if it does not widen, the display panel 200 does not have symmetry. In the embodiment of the present application, the above arrangement is used to achieve uniform distribution of the first signal line 341, the second signal line 342 and the third signal line 343 on the first side and the second side, avoiding the width of the frame on one side being too wide due to too many wirings. Moreover, uniform wiring on the first side and the second side is conducive to the rational use of wiring space. At the same time, the fourth sub-pixel 334 and the corresponding transistor structure 34 are arranged in the non-display area 32, and their wiring arrangement is different from that of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333. Therefore, the wiring position of the fourth signal line 345 is not considered here.

[0127] If the fourth sub-pixel 334 is arranged in the display area.

[0128] In some optional embodiments, referring toFigure 15 As shown, the non-display area 32 includes opposite first and second sides, and the first signal line 341, the second signal line 342, the third signal line 343 and the fourth signal line 345 extend to the first and second sides respectively.

[0129] For example, any one of the first signal line 341, the second signal line 342 and the third signal line 343 extends to the first side with the fourth signal line 345, and the remaining signal line extends to the second side; or the first signal line 341, the second signal line 342 and the third signal line 343 extend to the first side, and the fourth signal line 345 extends to the second side.

[0130] Through the above arrangement, the first signal line 341, the second signal line 342, the third signal line 343 and the fourth signal line 345 are evenly distributed on the first and second sides, avoiding that the frame on one side is too wide due to too much wiring. Moreover, the even wiring on the first and second sides is conducive to the rational use of wiring space.

[0131] If the fourth sub-pixel 334 and the fifth sub-pixel 335 are both arranged in the display area.

[0132] In some optional embodiments, referring to Figure 17 As shown, the non-display area 32 includes opposite first and second sides, and the first signal line 341, the second signal line 342, the third signal line 343 and the fifth signal line 346 extend to the first and second sides respectively.

[0133] For example, any one of the first signal line 341, the second signal line 342 and the third signal line 343 extends to the first side with the fifth signal line 346, and the remaining signal line extends to the second side; or the first signal line 341, the second signal line 342 and the third signal line 343 extend to the first side, and the fifth signal line 346 extends to the second side.

[0134] Through the above arrangement, the first signal line 341, the second signal line 342, the third signal line 343 and the fifth signal line 346 are evenly distributed on the first and second sides, avoiding that the frame on one side is too wide due to too much wiring. Moreover, the even wiring on the first and second sides is conducive to the rational use of wiring space.

[0135] If the fourth sub-pixel 334 and the fifth sub-pixel 335 are both arranged in the display area.

[0136] In some optional embodiments, referring to Figure 16 As shown, the non-display area 32 includes opposite first and second sides, and the first signal line 341, the second signal line 342, the third signal line 343, the fourth signal line 345 and the fifth signal line 346 extend to the first and second sides respectively.

[0137] For example, the first signal line 341, the second signal line 342 and the third signal line 343 extend to the first side, and the fourth signal line 345 and the fifth signal line 346 extend to the second side.

[0138] Through the above arrangement, the uniform distribution of the first signal line 341, the second signal line 342, the third signal line 343, the fourth signal line 345 and the fifth signal line 346 on the first side and the second side is realized, avoiding that the width of the side frame is too wide due to too much wiring. Moreover, the uniform wiring on the first side and the second side is conducive to the rational use of wiring space.

[0139] Based on the same inventive concept, referring to Figure 18 The display panel light sensing driving method provided by the embodiment of the present application comprises:

[0140] S10, detecting a first voltage value at a starting moment and a second voltage value at an ending moment of a non-display state of any frame of a sub-pixel in a pixel unit by using a driving unit;

[0141] S11, determining a first voltage difference according to the first voltage value and the second voltage value;

[0142] In the display state of any frame of the sub-pixel, the first electrode (gate) signal is turned on, at this time, the second electrode (source) signal voltage is applied to the sub-pixel, in the non-display state of the frame of the sub-pixel, the first electrode signal of the transistor structure corresponding to the sub-pixel is turned off, and after receiving the ambient light, the third electrode (drain) leaks, and the first voltage difference is obtained by subtracting the first voltage value and the second voltage value detected at the starting moment and the ending moment of the non-display state, so as to determine the leakage size value.

[0143] S12, determining the ambient light intensity by using a first relationship curve of the voltage difference and the ambient light intensity and the first voltage difference;

[0144] In this step, the third electrode leakage size value of a certain light source under different intensities is collected in advance, and a relationship curve of the leakage size under different light intensities of the light source is generated; the leakage current size of the first transistor structure corresponding to the third sub-pixel under a certain light intensity of different light sources is collected in advance, the light intensity coefficient under different light sources is determined by combining the relationship curve of the light intensity and the leakage size of the light source collected in advance, and the relationship coefficient of different light sources under a certain light intensity is recorded, so as to determine the ambient light intensity by the first voltage difference.

[0145] S13, determining the ambient light type by using a corresponding relationship between the voltage difference proportion of each sub-pixel and the ambient light type and the first voltage difference.

[0146] In this step, the leakage of the third electrode of the first transistor structure corresponding to the first sub-pixel and the leakage of the third electrode of the first transistor structure corresponding to the second sub-pixel in different light sources are collected in advance, so as to determine the proportion of red light, green light and blue light in different light sources, and the first voltage difference is used to obtain the type of ambient light.

[0147] In some embodiments, the method further comprises:

[0148] S21, using the driving unit to detect the third voltage value at the start time and the fourth voltage value at the end time of the non-display state of the second transistor structure in the non-display area and the sub-pixel in the pixel unit in the frame;

[0149] S22, determining the second voltage difference according to the third voltage value and the fourth voltage value;

[0150] The sub-pixel in the display area and the corresponding first transistor structure are used as a light sensing TFT module, wherein the first transistor structure will generate leakage current due to the influence of temperature in addition to the leakage current caused by ambient light, and the second voltage difference of the second transistor structure in the non-display state is used to determine the leakage current caused by temperature.

[0151] S23, determining the temperature interference by using the second relationship curve between the second voltage difference and temperature.

[0152] The relationship between the second voltage difference and the difference between the external temperature and a certain fixed ambient temperature is determined by collecting the leakage of the third electrode of the second transistor structure in advance.

[0153] S24, determining the third voltage difference by using the difference between the first voltage difference and the second voltage difference;

[0154] The third voltage difference is determined by using the difference between the first voltage difference and the second voltage difference, so as to eliminate the leakage caused by temperature.

[0155] S25, determining the final ambient light intensity by using the first relationship curve between the voltage difference and the ambient light intensity and the third voltage difference.

[0156] In this step, the final ambient light intensity is determined by using the third voltage difference in step S12, and the final ambient light intensity is the ambient light intensity after eliminating the influence of temperature.

[0157] S26, determining the final ambient light type by using the corresponding relationship between the voltage difference proportion of each sub-pixel and the ambient light type and the third voltage difference.

[0158] In this step, the final ambient light type is determined by using the third voltage difference in step S13, and the final ambient light type is the ambient light type after eliminating the influence of temperature.

[0159] S27, determining the brightness of the display panel according to the final ambient light category and the final ambient light intensity.

[0160] Based on the same inventive concept, referring to Figure 19 As shown in the display device 90 can be any product or component with display function such as mobile phone, tablet computer, television, display, notebook computer, digital photo frame or navigator. However, the present embodiment is not limited thereto.

[0161] It should be understood by those of ordinary skill in the art that the above discussion of any of the embodiments is merely exemplary and is not intended to suggest the scope of the present application (including the claims) is limited to these examples; the embodiments above or technical features among different embodiments can also be combined, and the steps can be implemented in any order, and there are many other changes of the aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of brevity.

[0162] In addition, in order to simplify the description and discussion, and so as not to make the embodiments of the present application difficult to understand, the well-known power / ground connections of integrated circuit (IC) chips and other components can or can not be shown in the provided drawings. In addition, the devices can be shown in the form of block diagrams in order to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented by the embodiments of the present application (i.e. these details should be fully within the understanding of those skilled in the art). Where specific details (e.g. circuits) are set forth in order to describe an exemplary embodiment of the present application, it will be apparent to those skilled in the art that the embodiments of the present application can be practiced without these specific details or with variations on these specific details. Therefore, these descriptions should be considered as illustrative rather than limiting.

[0163] Although the present application has been described in conjunction with the specific embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. For example, other memory architectures (e.g. dynamic RAM (DRAM)) can use the embodiments discussed.

[0164] The embodiments of the present application are intended to cover all such alternatives, modifications and variations as falling within the broad scope of the appended claims. Accordingly, any and all such modifications, variations or equivalents that fall within the spirit and scope of the embodiments of the present application are intended to be included within the scope of the present application.

Claims

1. A display panel, characterized in that, include: A display area and a non-display area surrounding or partially surrounding the display area; The display area includes an array of pixel units and a first transistor structure corresponding to the sub-pixels within the pixel units, and multiple signal lines; wherein the first transistor structure includes a first electrode, a second electrode, and a third electrode; the first ends of the multiple signal lines are respectively connected to the third electrode of the first transistor structure corresponding to at least one row of sub-pixels of the same color, and the second ends extend into the non-display area; the third electrode is a drain electrode; The non-display area includes a driving unit, which is connected to the second end of the plurality of signal lines. The driving unit is used to detect the first voltage value at the start time and the second voltage value at the end time of any frame of the sub-pixel in the pixel unit in the non-display state, and to determine the type of ambient light and / or the intensity of ambient light based on the first voltage value and the second voltage value.

2. The display panel according to claim 1, characterized in that, The sub-pixels within the pixel unit include a first sub-pixel, a second sub-pixel, and a third sub-pixel; The multiple signal lines include a first signal line, a second signal line, and a third signal line; The first end of the first signal line is connected to the third electrode of the first transistor structure corresponding to at least one row of the first sub-pixels, and the second end is connected to the driving unit. The first end of the second signal line is connected to the third electrode of the first transistor structure corresponding to at least one row of the second sub-pixels, and the second end is connected to the driving unit. The first end of the third signal line is connected to the third electrode of the first transistor structure corresponding to at least one row of the third sub-pixels, and the second end is connected to the driving unit.

3. The display panel according to claim 2, characterized in that, The first sub-pixel, the second sub-pixel, and the third sub-pixel connected to the driving unit are located in pixel units in different rows.

4. The display panel according to claim 2, characterized in that, It also includes a second transistor structure and a fourth signal line disposed in the non-display area, wherein the second transistor structure includes a first electrode, a second electrode and a third electrode; The first end of the fourth signal line is connected to the third electrode of the second transistor structure, and the second end is connected to the driving unit. The second transistor structure has at least one shielding layer on the side facing the light emission direction.

5. The display panel according to claim 2, characterized in that, It also includes a fourth sub-pixel disposed in the display area, a first transistor structure corresponding to the fourth sub-pixel, and a fourth signal line. The fourth sub-pixel is disposed with the sub-pixel array in the pixel unit. The first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and the second end extends toward the non-display area and is connected to the driving unit. The fourth sub-pixel is black.

6. The display panel according to claim 2, characterized in that, It also includes a fourth sub-pixel and a fifth sub-pixel disposed in the display area, as well as a first transistor structure, a fourth signal line, and a fifth signal line corresponding to the fourth sub-pixel and the fifth sub-pixel, respectively. The fourth sub-pixel and the fifth sub-pixel are respectively arranged in a sub-pixel spacing array within the pixel unit. The pixel unit is provided with a fourth sub-pixel and a fifth sub-pixel between columns, and the fourth sub-pixel and the fifth sub-pixel are spaced apart along the row direction of the pixel unit; The first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and the second end extends into the non-display area and is connected to the driving unit. The first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and the second end extends into the non-display area and is connected to the driving unit. The fourth sub-pixel is black, and the fifth sub-pixel is transparent.

7. The display panel according to claim 2, characterized in that, It also includes a fifth sub-pixel disposed in the display area, a first transistor structure corresponding to the fifth sub-pixel, and a fifth signal line. The fifth sub-pixel is disposed with the sub-pixel array in the pixel unit. The first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and the second end extends into the non-display area and is connected to the driving unit. The fifth sub-pixel is transparent.

8. The display panel according to claim 4, characterized in that, The second transistor structure is disposed on the side of the non-display area near the driving unit.

9. The display panel according to claim 4, characterized in that, The first electrode of the first transistor structure is connected to a signal scan line, and the second transistor structure and the sub-pixels in the pixel unit are simultaneously driven by the signal scan line through the driving unit.

10. The display panel according to any one of claims 5-6, characterized in that, The first electrode of the first transistor structure is connected to a signal scan line, and the first transistor structure corresponding to the fourth sub-pixel shares the signal scan line with the sub-pixels located in the same row of the pixel unit.

11. The display panel according to any one of claims 6-7, characterized in that, The first electrode of the first transistor structure is connected to a signal scan line, and the first transistor structure corresponding to the fifth sub-pixel shares the signal scan line with the sub-pixels located in the same row of the pixel unit.

12. The display panel according to claim 2, characterized in that, The non-display area includes a first side and a second side opposite to each other, the first signal line and the second signal line extend toward the first side, and the third signal line extends toward the second side; Alternatively, the first signal line may extend toward the first side, and the second and third signal lines may extend toward the second side.

13. A photosensitive driving method for a display panel, characterized in that, The method, applicable to the display panel according to any one of claims 1-12, comprises: The driving unit is used to detect the first voltage value at the start time and the second voltage value at the end time of any frame in the non-display state of the sub-pixel within the pixel unit; The first voltage difference is determined based on the first voltage value and the second voltage value; The ambient light intensity is determined using a predetermined first relationship curve between the voltage difference and the ambient light intensity, and the first voltage difference. The type of ambient light is determined by using the pre-determined correspondence between the voltage difference ratio of each sub-pixel within a pixel unit and the type of ambient light, as well as the first voltage difference.

14. The method according to claim 13, characterized in that, The method further includes: using the driving unit to detect the third voltage value at the start time and the fourth voltage value at the end time of the non-display state of the second transistor structure and the sub-pixel in the pixel unit within the frame; The second voltage difference is determined based on the third voltage value and the fourth voltage value; Temperature disturbances are determined using a pre-defined second relationship curve between the second voltage difference and temperature. The third voltage difference is determined by using the difference between the first voltage difference and the second voltage difference; The final ambient light intensity is determined using a first relationship curve between the predetermined voltage difference and the ambient light intensity, and a third voltage difference. The final ambient light type is determined by using the pre-determined correspondence between the voltage difference ratio of each sub-pixel and the ambient light type, as well as the third voltage difference. The brightness of the display panel is determined based on the type and intensity of the final ambient light.

15. A display device, characterized in that, Includes the display panel as described in any one of claims 1-12.

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