Wafer etching method and etching device thereof

Abstract

The invention discloses a wafer etching method and an etching device thereof, and relates to the technical field of wafer etching; the method comprises an etching mounting part, on which a wafer sealing mounting part is mounted; the wafer sealing mounting part is used to seal the edge of the wafer; the etching mounting part is mounted with a leakage-proof pressurizing part; the leakage-proof pressurizing part is used to apply air pressure below the etching surface; the etching mounting part is mounted with a rotating switching part; the rotating switching part is used to switch different etching liquids; the edge of the wafer can be clamped and fixed to ensure stable etching, and the method of simultaneously shrinking the shrinking ring inwards can improve the safety of wafer clamping and prevent wafer breakage caused by local clamping, and the leakage-proof pressurizing part can be used for leakage-proof pressurization work; the method solves the problem that the processing technology of the current wafer etching device proposed in the above background technology is not convenient for air pressure leakage prevention and etching liquid isolation and pre-mixing.

Description

Technical Field

[0001] The invention relates to the technical field of wafer etching, in particular to a wafer etching method and an etching device thereof. Background Art

[0002] In actual semiconductor processing and manufacturing work, wafer etching is an important processing step. Its main principle is to etch the wafer through a solution. The method of etching with an etching solution is also called wet etching. The etching solutions mainly include phosphoric acid, hydrofluoric acid, etc. Different etching solutions have different etching speeds and precision. Different etching solutions need to be selected according to actual conditions. Due to its high efficiency and low cost, it is widely used in semiconductor chip processing with low precision requirements. When etching the wafer, it is necessary to avoid the non-specified surface on the back being corroded by the etching solution. If the non-specified surface of the wafer is contaminated by the etching solution, it will affect the wafer. The overall functionality may even cause part of the wafer to be unusable and must be abandoned; the current processing technology of the wafer etching device is not convenient for sealed etching of the wafer, which can easily cause the etching solution to leak to the back, increase the defective rate, and is not convenient for air pressure leakage prevention. It is also not convenient for rapid switching of etching solutions. Switching between different etching solutions requires tedious wafer cleaning, and multiple wafer transfers can easily reduce the yield. At the same time, the wafer etching work requires frequent adjustment of the etching solution concentration. The traditional method of directly adding high-concentration etching solution and mixing is likely to cause excessive local concentration of the wafer, resulting in excessive etching, and is not convenient for etching solution isolation and pre-mixing.

[0003] To this end, we propose a wafer etching method and an etching device thereof. Summary of the invention

[0004] The object of the present invention is to provide a wafer etching method and an etching device thereof to solve the problem that the processing technology of the current wafer etching device mentioned in the above background technology is not convenient for air pressure leakage prevention and etching liquid isolation and pre-mixing.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a wafer etching method, which comprises the following steps: a. cleaning the wafer to be etched, and drying the wafer to be etched after cleaning, and the cleaning environment is carried out in a dust-free workshop; b. etching the dried wafer with a wafer etching device, adjusting the etching solution concentration and etching time according to the etching requirements, keeping the back of the wafer sealed during the etching process to prevent the etching solution from corroding the non-etching surface of the wafer; after the etching surface of the wafer is etched by the etching solution, the wafer surface is cleaned and dried again.

[0006] A wafer etching device comprises an etching mounting part, on which a wafer sealing mounting part is mounted; the wafer sealing mounting part is used to seal the edge of the wafer; the etching mounting part is mounted with a leak-proof boosting part; the leak-proof boosting part is used to apply air pressure below the etching surface; the etching mounting part is mounted with a rotating switching part; the rotating switching part is used to switch between different etching liquids; the rotating switching part is mounted with a lifting and closing control part; the lifting and closing control part is used to isolate the wafer when adjusting the concentration of the etching liquid; three cleaning and drying parts are mounted on the rotating switching part; the etching mounting part comprises: a sealing mounting plate and a shrinking ring, on which a shrinking ring is fixedly mounted; the outer ring of the shrinking ring is a raised structure; and three supporting legs are mounted at the bottom of the sealing mounting plate.

[0007] Preferably, the lifting and closing control component includes: a lifting hydraulic cylinder, a lifting frame, a lifting shaft, a sleeve and a fitting spring, the lifting hydraulic cylinder is fixedly mounted on a rotating mounting seat; the lifting frame is fixedly mounted on the output shaft of the lifting hydraulic cylinder; three lifting shafts are fixedly mounted on the bottom of the lifting frame, and the three lifting shafts are respectively slidably inserted on the rotating mounting seat; sleeves are respectively slidably sleeved under the three lifting shafts, and fitting springs are respectively sleeved inside the three sleeves.

[0008] Preferably, the cleaning and drying part includes: a distance-adjustable hydraulic cylinder, a lifting plate, a drying mounting cylinder, an electric heating fan and a liquid guiding tube, the distance-adjustable hydraulic cylinder is fixedly mounted on a rotating mounting seat through a bracket; a lifting plate is fixedly mounted on the output shaft of the distance-adjustable hydraulic cylinder, and the lifting plate is plugged into the rotating mounting seat; the lifting plate is located at the interval of the etching groove; a drying mounting cylinder is fixedly mounted on the lifting plate; a valve is provided on the drying mounting cylinder; the electric heating fan is fixedly mounted on the drying mounting cylinder; two liquid guiding tubes are fixedly mounted on the lifting plate, and valves are respectively provided on the two liquid guiding tubes; the two liquid guiding tubes are respectively used for liquid inlet and liquid discharge, and the liquid guiding tube for liquid inlet is externally connected to a cleaning liquid pump.

[0009] Preferably, the leak-proof pressurizing part includes: a leak-proof suction pipe, a pressurizing pipe, a piston and an electric push rod, the leak-proof suction pipe is fixedly mounted on a fixed partition; the end of the leak-proof suction pipe is located on the inner side of a sealing ring; a pressurizing pipe is fixedly mounted on the leak-proof suction pipe; a piston is slidably mounted on the pressurizing pipe; an electric push rod is mounted on the pressurizing pipe, and a piston is fixedly mounted on the output shaft of the electric push rod; the pressurizing pipe is used to exhaust and apply air pressure at the bottom of the wafer; the leak-proof suction pipe passes through a sealing mounting plate and a pull-down plate.

[0010] Preferably, the rotation switching part includes: a rotation mounting seat, an etching groove and a limit ring, the rotation mounting seat is attached to the sealing mounting plate; three etching grooves are opened on the rotation mounting seat, and electric heating wires are respectively embedded in the inner walls of the three etching grooves; the etching groove is used to align the shrinkage ring; the limit ring is fixedly installed inside the etching groove; the inside of the etching groove is used to fill the etching liquid.

[0011] Preferably, the lifting and closing control component also includes: a closing disk, a V-shaped spring clip, a current limiting ring and an elastic baffle, the three closing disks are fixedly installed on the bottom of the three sleeves, and the outer circles of the three closing disks are spaced from the inner wall of the etched groove; the three closing disks are respectively attached to the three limiting rings; the closing disk is provided with a through hole, and a circle of V-shaped spring clips are fixedly installed on both sides of the through hole provided on the closing disk; the intervals of each circle of V-shaped spring clips are the same; a current limiting ring is fixedly installed inside the through hole provided on the closing disk, and the two sides of the current limiting ring are inclined structures; an elastic baffle is fitted on the current limiting ring; the two sides of the elastic baffle are respectively fixedly installed on the ends of two circles of V-shaped spring clips.

[0012] Preferably, the etching mounting part also includes: a fixed partition and a sealing ring, the fixed partition is fixedly mounted on the sealing mounting plate; a rubber protrusion structure is provided in the middle of the fixed partition; a sealing ring is fixedly mounted on the outer ring of the fixed partition, and a shrinkage ring is fixedly mounted on the top of the sealing ring; the sealing ring is at the same height as the rubber protrusion structure provided in the middle of the fixed partition.

[0013] Preferably, the rotary switching part also includes: a starting switching motor and a closing cover, the starting switching motor is fixedly mounted on a sealing mounting plate; a rotary mounting seat is fixedly mounted on the output shaft of the starting switching motor, and three closing covers are threadedly connected to the rotary mounting seat; the three closing covers are used to close the etching groove.

[0014] Preferably, the wafer sealing mounting part includes: a wafer sealing sliding shaft, a downward pressure auxiliary ring, a pull-down plate, a magnetic suction mounting plate and an electromagnet, the wafer sealing sliding shaft is provided with a circle and a circle of wafer sealing sliding shafts; a circle of wafer sealing sliding shafts are respectively slidably inserted on the fixed partition plate; a circle of the wafer sealing sliding shaft is fixedly installed with a downward pressure auxiliary ring on the top, and the inner side of the downward pressure auxiliary ring is a slope structure; the sealing ring is attached to the rubber protrusion structure of the outer ring of the shrinking ring; a circle of the wafer sealing sliding shaft is fixedly installed with a pull-down plate on the bottom; the bottom of the pull-down plate is an iron structure; the magnetic suction mounting plate is fixedly installed on the inner side of the sealing mounting plate; the magnetic suction mounting plate is aligned with the pull-down plate; an electromagnet is fixedly installed on the magnetic suction mounting plate; the electromagnet is used to magnetically attract the pull-down plate; a spring is sleeved on the outside of the electromagnet, and the spring on the outside of the electromagnet is connected between the pull-down plate and the magnetic suction mounting plate.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] The present invention adopts a wafer sealing installation part, which can control the shrinkage ring to shrink inward at the same time, shrink inward in a perfect circle to position the wafer, so as to achieve sealing of the wafer, and clamp and fix the edge of the wafer to ensure stable etching. The shrinkage ring shrinks inward at the same time, which can improve the safety of wafer clamping and prevent wafer breakage caused by local clamping. The structure is more reasonable, and the leakage-proof boosting part can be used for leakage-proof pressurization work. The structure uses air pressure to supply below the wafer processing surface. Even if the shrinkage ring is used for a long time and there are problems such as aging, when leakage occurs, air pressure can be applied outward from the inside of the pressurized tube to prevent the etching solution from leaking and corroding the bottom of the wafer.

[0017] By adopting the lifting and closing control parts, the wafer can be isolated by using the closing plate when preparing the etching liquid. The preparation work can be carried out during the wafer etching process, which can be more suitable for actual wafer production test work. This structure adopts an isolation method. When adding high-concentration or low-concentration etching liquid, it will not be directly mixed into the wafer surface. It can avoid the internal etching liquid being uneven when adding high-concentration etching liquid during the preparation process, causing the etching depth of the wafer to change and the uniformity to be poor.

[0018] A rotary switching part is adopted, and three etching grooves are filled with different etching liquids, which can realize rotary switching. Switching can be achieved without taking the wafer, which can reduce the number of wafer transfers and improve the wafer yield. The cleaning and drying part can be used to clean and dry the residual etching liquid on the wafer surface during switching, which can improve the actual wafer etching efficiency of this structure. There is no need for multiple workstations to transfer back and forth. Cleaning and drying are efficient and fast, thereby improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall structure of the wafer etching device of the present invention;

[0020] Figure 2 It is a schematic diagram of the bottom structure of the wafer etching device of the present invention;

[0021] Figure 3 It is a cross-sectional view of the internal structure of the wafer etching device of the present invention;

[0022] Figure 4 This is a schematic diagram of the structure of the etching mounting member of the present invention;

[0023] Figure 5 For the present invention Figure 3 A magnified view of the structure of the middle B area;

[0024] Figure 6 For the present invention Figure 3 A magnified view of the structure of the middle C region;

[0025] Figure 7This is a cross-sectional view of the wafer sealing and mounting structure of the present invention;

[0026] Figure 8 It is a structural schematic diagram of the rotation switching part of the present invention;

[0027] Fig. 9 This is a schematic diagram of the structure of the lifting and closing control member of the present invention;

[0028] Fig.10 This is a cross-sectional view of the lifting and closing control member structure of the present invention;

[0029] Fig.11 For the present invention Fig.10 A magnified view of the structure of the middle J region;

[0030] Fig.12 It is a schematic diagram of the structure of the cleaning and drying part of the present invention.

[0031] In the figure: 1. Etching mounting part; 101. Sealing mounting plate; 102. Shrinking ring; 103. Fixed partition; 104. Sealing ring; 2. Wafer sealing mounting part; 201. Wafer sealing sliding shaft; 202. Down-pressing auxiliary ring; 203. Down-pull plate; 204. Magnetic suction mounting plate; 205. Electromagnet; 3. Anti-leakage pressurization part; 301. Anti-leakage suction pipe; 302. Pressurization pipe; 303. Piston; 304. Electric push rod; 305. Pressurization tension spring; 4. Rotation switching part; 401. Rotation mounting seat; 4011. Etching groove; 402. Limiting ring; 403. Start switching motor; 404. Closing cover; 5. Lifting and closing control part; 501. Lifting hydraulic cylinder; 502. Lifting frame; 503. Lifting shaft; 504. Sleeve; 505. Fitting spring; 506. Closing disk; 507. V-shaped spring piece; 508, current limiting ring; 509, elastic baffle plate; 6, cleaning and drying part; 601, distance-adjusting hydraulic cylinder; 602, lifting plate; 603, drying installation cylinder; 604, electric heating fan; 605, liquid guide tube. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] Example 1: Please refer to Figure 1-Figure 12 As shown:

[0034] The present invention provides a technical solution: a wafer etching method, which comprises the following steps: a. cleaning a wafer to be etched, and drying the wafer to be etched after cleaning, wherein the cleaning environment is carried out in a dust-free workshop; b. etching the dried wafer using a wafer etching device, adjusting the etching solution concentration and the etching time according to etching requirements, and keeping the reverse side of the wafer sealed during the etching process to prevent the etching solution from corroding the non-etching surface of the wafer; after the etching surface of the wafer is etched by the etching solution, the surface of the wafer is cleaned and dried again.

[0035] A wafer etching device is used for etching the dried wafer in step b of a wafer etching method, comprising an etching mounting member 1, on which a wafer sealing mounting portion 2 is mounted; the wafer sealing mounting portion 2 is used to seal the edge of the wafer; the etching mounting member 1 is mounted with a leak-proof pressurizing portion 3; the leak-proof pressurizing portion 3 is used to apply air pressure below the etching surface; the etching mounting member 1 is mounted with a rotating switching portion 4; the rotating switching portion 4 is used to switch between different etching solutions; the rotating switching portion 4 is mounted with a lifting and closing control member 5; the lifting and closing control member 5 is used to isolate the wafer when adjusting the concentration of the etching solution; the rotating switching portion 4 is mounted with three cleaning and drying portions 6; the etching mounting member 1 comprises: a sealing mounting plate 101 and a shrinking ring 102, on which the shrinking ring 102 is fixedly mounted; the outer ring of the shrinking ring 102 is a convex structure; and three supporting legs are mounted at the bottom of the sealing mounting plate 101.

[0036] The etching mounting part 1 further comprises: a fixed partition 103 and a sealing ring 104, wherein the fixed partition 103 is fixedly mounted on the sealing mounting plate 101; a rubber protrusion structure is provided in the middle of the fixed partition 103; a sealing ring 104 is fixedly mounted on the outer ring of the fixed partition 103, and a shrink ring 102 is fixedly mounted on the top of the sealing ring 104; the sealing ring 104 and the rubber protrusion structure provided in the middle of the fixed partition 103 are at the same height; the wafer sealing mounting part 2 comprises: a wafer sealing sliding shaft 201, a pressing auxiliary ring 202, and a sealing ring 104. 02, a pull-down plate 203, a magnetic mounting plate 204 and an electromagnet 205, a wafer sealing slide shaft 201 is provided with a circle, a circle of wafer sealing slide shafts 201; a circle of wafer sealing slide shafts 201 are respectively slidably plugged on the fixed partition 103; a downward pressing auxiliary ring 202 is fixedly installed on the top of a circle of wafer sealing slide shafts 201, and the inner side of the downward pressing auxiliary ring 202 is a slope structure; the sealing ring 104 is attached to the rubber protrusion structure of the outer ring of the shrink ring 102; a pull-down plate is fixedly installed at the bottom of a circle of wafer sealing slide shafts 201 203; the bottom of the pull-down plate 203 is an iron structure; the magnetic mounting plate 204 is fixedly mounted on the inner side of the sealing mounting plate 101; the magnetic mounting plate 204 is aligned with the pull-down plate 203; an electromagnet 205 is fixedly mounted on the magnetic mounting plate 204; the electromagnet 205 is used to magnetically attract the pull-down plate 203; a spring is sleeved on the outer side of the electromagnet 205, and the spring on the outer side of the electromagnet 205 is connected between the pull-down plate 203 and the magnetic mounting plate 204; the anti-leakage booster part 3 includes: an anti-leakage suction pipe 301, a booster The anti-leakage suction pipe 301 is fixedly mounted on the fixed partition 103; the end of the anti-leakage suction pipe 301 is located inside the sealing ring 104; the anti-leakage suction pipe 301 is fixedly mounted with a pressurizing pipe 302; the piston 303 is slidably mounted on the pressurizing pipe 302; the electric push rod 304 is mounted on the pressurizing pipe 302, and the piston 303 is fixedly mounted on the output shaft of the electric push rod 304; the pressurizing pipe 302 is used to exhaust and apply air pressure at the bottom of the wafer;The anti-leakage suction pipe 301 passes through the sealing mounting plate 101 and the pull-down plate 203, and adopts the wafer sealing mounting part 2, which can control the shrinking ring 102 to shrink inward at the same time, shrink inward in a perfect circle to position the wafer, and can achieve sealing of the wafer. At the same time, the edge of the wafer can be clamped and fixed to ensure stable etching. The shrinking ring 102 is used to shrink inward at the same time, which can improve the safety of wafer clamping and prevent wafer breakage caused by local clamping. This structure is more reasonable. At the same time, the anti-leakage pressurization part 3 can be used for anti-leakage pressurization work. This structure By using air pressure, the etching liquid can be supplied below the processing surface of the wafer. Even if the shrink ring 102 has been used for a long time and has problems such as aging, when leakage occurs, the pressurized tube 302 can apply air pressure to the outside to prevent the etching liquid from leaking and corroding the bottom of the wafer, resulting in a decrease in the wafer yield. This structure is more reasonable. Once the shrink ring 102 is not sealed tightly, the air pressure will prevent the etching liquid from leaking to the back of the wafer. When the staff finds that the shrink ring 102 has bubbles, they can stop etching the wafer in time and take the wafer out to prevent greater losses. ;

[0037] The rotary switching part 4 comprises: a rotary mounting seat 401, an etching groove 4011 and a limiting ring 402, wherein the rotary mounting seat 401 is attached to the sealing mounting plate 101; three etching grooves 4011 are provided on the rotary mounting seat 401, and electric heating wires are embedded in the inner walls of the three etching grooves 4011 respectively; the etching grooves 4011 are used to align the shrink ring 102; the limiting ring 402 is fixedly installed inside the etching grooves 4011; the inside of the etching grooves 4011 is used to fill the etching liquid; the rotary switching part 4 also comprises: a starting switching motor 403 and a closing cover 404, wherein the starting switching motor 403 is fixedly installed on the sealing mounting plate 101; a rotary mounting is fixedly installed on the output shaft of the starting switching motor 403 The rotary mounting seat 401 is provided with three closing covers 404 which are threadedly connected thereto; the three closing covers 404 are used to close the etching groove 4011; the cleaning and drying section 6 comprises: a distance-adjusting hydraulic cylinder 601, a lifting plate 602, a drying mounting cylinder 603, an electric heating fan 604 and a liquid guide tube 605; the distance-adjusting hydraulic cylinder 601 is fixedly mounted on the rotary mounting seat 401 through a bracket; a lifting plate 602 is fixedly mounted on the output shaft of the distance-adjusting hydraulic cylinder 601, and the lifting plate 602 is plugged into the rotary mounting seat 401; the lifting plate 602 is located at the interval of the etching groove 4011; a drying mounting cylinder 603 is fixedly mounted on the lifting plate 602; a valve is provided on the drying mounting cylinder 603; the electric heating fan 604 and the liquid guide tube 605 are provided with a valve ... 04 is fixedly mounted on the drying mounting cylinder 603; two liquid guide tubes 605 are fixedly mounted on the lifting plate 602, and valves are respectively arranged on the two liquid guide tubes 605; the two liquid guide tubes 605 are respectively used for liquid inlet and liquid discharge, the liquid guide tube 605 for liquid inlet is externally connected to a cleaning liquid pump, and the liquid guide tube 605 for liquid inlet is externally connected to a cleaning liquid pump, and a rotating switching part 4 is adopted, and three etching grooves 4011 are provided with different etching liquids inside, and rotation switching can be realized, and switching can be realized without taking the wafer, which can reduce the number of wafer transportation times and improve the wafer yield. During the rotation switching process of the etching groove 4011, the rotating mounting seat 401 is attached to the sealing mounting plate 101, which can maintain sealing and avoid To avoid leakage of etching liquid, the residual etching liquid on the surface of the wafer during switching can be cleaned and dried in cooperation with the cleaning and drying part 6, which can improve the actual wafer etching efficiency of the structure, and there is no need for multiple workstations to transport back and forth. Cleaning and drying are efficient and fast, which improves production efficiency. When the etching liquid needs to be replaced for more precise etching, the rotating mounting seat 401 is driven to rotate by starting the switching motor 403. At this time, the lifting plate 602 adjacent to the etching groove 4011 is aligned with the wafer, and the valves on the two liquid guide tubes 605 are opened, and the cleaning liquid pump connected to the liquid guide tube 605 responsible for liquid inlet is opened to supply cleaning liquid. At this time, the cleaning liquid can clean the surface of the wafer, and the residual etching liquid is discharged through the liquid guide tube 605 responsible for discharging liquid.

[0038] The lifting and closing control component 5 includes: a lifting hydraulic cylinder 501, a lifting frame 502, a lifting shaft 503, a sleeve 504 and a fitting spring 505. The lifting hydraulic cylinder 501 is fixedly installed on the rotating mounting seat 401; the lifting frame 502 is fixedly installed on the output shaft of the lifting hydraulic cylinder 501; three lifting shafts 503 are fixedly installed at the bottom of the lifting frame 502, and the three lifting shafts 503 are respectively slidably inserted on the rotating mounting seat 401; sleeves 504 are respectively slidably sleeved under the three lifting shafts 503, and the fitting springs 505 are respectively sleeved inside the three sleeves 504; the lifting and closing control component 5 also includes: a closing disk 506, a V-shaped spring 507, a current limiting ring 508 and an elastic baffle 5 09, the three sleeves 504 are respectively fixedly installed with closing disks 506 at the bottom, and the outer circles of the three closing disks 506 are spaced from the inner wall of the etching groove 4011; the three closing disks 506 are respectively attached to the three limiting rings 402; the closing disks 506 are provided with through holes, and a circle of V-shaped spring pieces 507 are respectively fixedly installed on both sides of the through holes provided on the closing disks 506; the intervals of each circle of V-shaped spring pieces 507 are the same; a limiting flow ring 508 is fixedly installed inside the through holes provided on the closing disks 506, and the two sides of the limiting flow ring 508 are inclined structures; an elastic baffle 509 is fitted and sleeved on the limiting flow ring 508; the two sides of the elastic baffle 509 are respectively fixedly installed on the ends of the two circles of V-shaped spring pieces 507, and a lifting and closing control member 5 is adopted, The closed disk 506 can be used to isolate the wafer when mixing the etching solution. The mixing work can be carried out during the wafer etching process, which can be more suitable for actual wafer production test work. The present structure adopts an isolation method. When adding high-concentration or low-concentration etching solution, it will not be directly mixed into the wafer surface. It can avoid the problem of uneven internal etching solution when adding high-concentration etching solution during the mixing process, which causes the etching depth of the wafer to change and poor uniformity. At the same time, if the wafer etching solution is mixed by high-speed stirring, the overall flow rate of the etching solution will be different, which will also cause a decrease in etching accuracy. By adopting an elastic baffle 509 that can be elastically movable, when the closed disk 506 moves, it will not be mixed due to the closed baffle. The distance between the disk 506 and the inner wall of the etching groove 4011 is narrow, and when the closed disk 506 moves, negative pressure is generated to damage the wafer, which can relieve pressure. At the same time, after the closed disk 506 stops moving and recovers to be stable, the elastic baffle 509 can automatically reset to the current limiting ring 508 under the pressure of the V-shaped spring 507. The inner inclined surface structure of the current limiting ring 508 is more convenient for inserting the closed disk 506; the slidable lifting shaft 503 and the sleeve 504 are elastically adapted with the internal fitting spring 505, and the limiting ring 402 can be tightly closed. At this time, the distance between the bottom of the closed disk 506 and the wafer is small, and the retained etching solution can be effectively mixed with the prepared etching solution to improve the etching uniformity without causing excessive local concentration.

[0039] The working principle of this embodiment is as follows: first, open the closing cover 404, then you can add etching solution into the etching groove 4011 and adjust the concentration of etching solution. The wafer can be taken by the robot arm and placed on the fixed partition 103. At this time, the electromagnet 205 starts the magnetic pull-down plate 203, driving the downward pressure auxiliary ring 202 to move down and squeeze the shrinking ring 102. At this time, the shrinking ring 102 uses the raised ring on the outside to shrink inward after being pressed. At this time, it can be limited to fit the surface of the wafer. The piston 303 is pushed inward by the electric push rod 304 to generate and maintain air pressure. Once the shrinking ring 102 is not sealed tightly, the air pressure will prevent the etching solution from leaking to the back of the wafer. When the staff finds bubbles on the shrinking ring 102, they can When the wafer is removed from the etching process, the lifting plate 602 is driven upward by the distance-adjusting hydraulic cylinder 601. After the wafer is installed, the lifting plate 602 is driven to be inserted into the rotating mounting seat 401 for sealing by the distance-adjusting hydraulic cylinder 601. When the etching liquid needs to be replaced for more precise etching, the rotating mounting seat 401 is driven to rotate by starting the switching motor 403. At this time, the lifting plates 602 adjacent to the etching groove 4011 are aligned with the wafer. By opening the valves on the two liquid guide tubes 605, the cleaning liquid pump connected to the liquid guide tube 605 responsible for liquid inlet is opened to supply cleaning liquid. At this time, the cleaning liquid can clean the surface of the wafer, and the residual etching liquid can be discharged through the liquid guide tube 605 responsible for discharging liquid, which can be discharged through The distance-adjusting hydraulic cylinder 601 drives the lifting plate 602 to appropriately adjust the height, and reduces the distance between the liquid guide tube 605 and the wafer to facilitate the discharge of more residual cleaning liquid. Then, the valve on the drying installation cylinder 603 is opened, and the electric heating fan 604 is turned on to blow the hot air to dry the residue on the surface of the wafer; when the concentration of the etching liquid needs to be adjusted, the lifting hydraulic cylinder 501 can be used to drive the closing plate 506 to move downward. At this time, the slidable lifting shaft 503 and the sleeve 504 are elastically adapted with the internal fitting spring 505, and can be tightly closed against the limit ring 402. At this time, the bottom of the closing plate 506 is relatively small with the wafer, and the remaining etching liquid can be mixed with the prepared etching liquid to effectively improve the etching uniformity without causing excessive local concentration. ; At this time, etching solutions of different concentrations can be added to the etching groove 4011 for preparation, and can be stirred by a stirring plate. At this time, the flow force generated by stirring is isolated by the closing plate 506 and will not affect the surface of the wafer. After the preparation is completed, the closing plate 506 can be driven to move up and reset by the lifting hydraulic cylinder 501, and the prepared uniform solution will participate in the etching of the wafer; when the closing plate 506 moves, the negative pressure generated when the closing plate 506 moves will not cause damage to the wafer due to the narrow interval between the closing plate 506 and the inner wall of the etching groove 4011, and the pressure relief function can be achieved. At the same time, after the closing plate 506 stops moving and returns to stability, the elastic baffle 509 can automatically reset itself to the current limiting ring 508 under the pressure of the V-shaped spring piece 507.

[0040] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0041] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A wafer etching device, comprising an etching mounting member (1), wherein a wafer sealing mounting portion (2) is mounted on the etching mounting member (1); characterized in that: The wafer sealing installation part (2) is used to seal the edge of the wafer; the etching installation part (1) is provided with a leak-proof pressurizing part (3); the leak-proof pressurizing part (3) is used to apply air pressure below the etching surface; the etching installation part (1) is provided with a rotation switching part (4); the rotation switching part (4) is used to switch between different etching solutions; The rotation switching part (4) is provided with a lifting and closing control part (5); the lifting and closing control part (5) is used to isolate the wafer when adjusting the concentration of the etching solution; the rotation switching part (4) is provided with three cleaning and drying parts (6); The etching mounting component (1) comprises: a sealing mounting plate (101) and a shrinking ring (102); the shrinking ring (102) is fixedly mounted on the sealing mounting plate (101); the outer ring of the shrinking ring (102) is a raised structure; and three supporting legs are mounted on the bottom of the sealing mounting plate (101).

2. A wafer etching device according to claim 1, characterized in that: The etching mounting member (1) further comprises: a fixed baffle (103) and a sealing ring (104); the fixed baffle (103) is fixedly mounted on the sealing mounting plate (101); a rubber protrusion structure is provided in the middle of the fixed baffle (103); a sealing ring (104) is fixedly mounted on the outer ring of the fixed baffle (103), and a shrink ring (102) is fixedly mounted on the top of the sealing ring (104); the sealing ring (104) and the rubber protrusion structure provided in the middle of the fixed baffle (103) are at the same height.

3. A wafer etching device according to claim 2, characterized in that: The wafer sealing installation part (2) comprises: a wafer sealing sliding shaft (201), a downward pressing auxiliary ring (202), a downward pulling plate (203), a magnetic suction installation plate (204) and an electromagnet (205); the wafer sealing sliding shaft (201) is provided with a circle, a circle of wafer sealing sliding shaft (201); a circle of wafer sealing sliding shafts (201) are respectively slidably plugged on the fixed partition (103); a circle of wafer sealing sliding shafts (201) is fixedly installed on the top of the circle of wafer sealing sliding shafts (201), and the inner side of the downward pressing auxiliary ring (202) is a slope structure; the sealing ring (104) is attached to the rubber protrusion structure of the outer ring of the shrink ring (102); ; A pull-down plate (203) is fixedly mounted on the bottom of a circle of the wafer sealing sliding shaft (201); the bottom of the pull-down plate (203) is an iron structure; the magnetic attraction mounting plate (204) is fixedly mounted on the inner side of the sealing mounting plate (101); the magnetic attraction mounting plate (204) is aligned with the pull-down plate (203); an electromagnet (205) is fixedly mounted on the magnetic attraction mounting plate (204); the electromagnet (205) is used to magnetically attract the pull-down plate (203); a spring is sleeved on the outer side of the electromagnet (205), and the spring on the outer side of the electromagnet (205) is connected between the pull-down plate (203) and the magnetic attraction mounting plate (204).

4. A wafer etching device according to claim 3, characterized in that: The anti-leakage and pressurizing part (3) comprises: an anti-leakage suction pipe (301), a pressurizing pipe (302), a piston (303) and an electric push rod (304); the anti-leakage suction pipe (301) is fixedly mounted on the fixed partition (103); the end of the anti-leakage suction pipe (301) is located on the inner side of the sealing ring (104); the pressurizing pipe (302) is fixedly mounted on the anti-leakage suction pipe (301); the piston (303) is slidably mounted on the pressurizing pipe (302); the electric push rod (304) is mounted on the pressurizing pipe (302), and the piston (303) is fixedly mounted on the output shaft of the electric push rod (304); the pressurizing pipe (302) is used to exhaust and apply air pressure at the bottom of the wafer; the anti-leakage suction pipe (301) passes through the sealing mounting plate (101) and the pull-down plate (203).

5. The wafer etching device according to claim 1, characterized in that: The rotation switching part (4) comprises: a rotation mounting seat (401), an etching groove (4011) and a limiting ring (402); the rotation mounting seat (401) is attached to the sealing mounting plate (101); three etching grooves (4011) are opened on the rotation mounting seat (401), and electric heating wires are respectively embedded in the inner walls of the three etching grooves (4011); the etching grooves (4011) are used to align the shrink ring (102); the limiting ring (402) is fixedly mounted inside the etching grooves (4011); the inside of the etching grooves (4011) is used to fill the etching liquid.

6. A wafer etching device according to claim 5, characterized in that: The rotary switching part (4) further comprises: a starting switching motor (403) and a closing cover (404); the starting switching motor (403) is fixedly mounted on the sealing mounting plate (101); a rotary mounting seat (401) is fixedly mounted on the output shaft of the starting switching motor (403), and three closing covers (404) are threadedly connected to the rotary mounting seat (401); the three closing covers (404) are used to close the etching groove (4011).

7. The wafer etching device according to claim 5, characterized in that: The lifting and closing control component (5) comprises: a lifting hydraulic cylinder (501), a lifting frame (502), a lifting shaft (503), a sleeve (504) and a fitting spring (505); the lifting hydraulic cylinder (501) is fixedly mounted on a rotating mounting seat (401); the lifting frame (502) is fixedly mounted on the output shaft of the lifting hydraulic cylinder (501); three lifting shafts (503) are fixedly mounted on the bottom of the lifting frame (502), and the three lifting shafts (503) are respectively slidably inserted on the rotating mounting seat (401); sleeves (504) are respectively slidably sleeved below the three lifting shafts (503), and fitting springs (505) are respectively sleeved inside the three sleeves (504).

8. The wafer etching device according to claim 7, characterized in that: The lifting and closing control member (5) further comprises: a closing disk (506), a V-shaped spring sheet (507), a current limiting ring (508) and an elastic baffle (509); the three sleeves (504) are respectively fixedly mounted with closing disks (506) at the bottom, and the outer rings of the three closing disks (506) and the inner wall of the etching groove (4011) are spaced; the three closing disks (506) are respectively attached to the three limiting rings (402); the closing disks (506) are respectively provided with through holes, and the closing disks A circle of V-shaped spring sheets (507) is fixedly installed on both sides of the through hole provided on (506); the intervals between each circle of V-shaped spring sheets (507) are the same; a limiting flow ring (508) is fixedly installed inside the through hole provided on the closing disk (506), and both sides of the limiting flow ring (508) are inclined surface structures; an elastic baffle (509) is fitted and sleeved on the limiting flow ring (508); both sides of the elastic baffle (509) are fixedly installed on the ends of the two circles of V-shaped spring sheets (507).

9. The wafer etching device according to claim 5, characterized in that: The cleaning and drying section (6) comprises: a distance-adjusting hydraulic cylinder (601), a lifting plate (602), a drying mounting cylinder (603), an electric heating fan (604) and a liquid guide tube (605); the distance-adjusting hydraulic cylinder (601) is fixedly mounted on a rotating mounting seat (401) through a bracket; a lifting plate (602) is fixedly mounted on an output shaft of the distance-adjusting hydraulic cylinder (601), and the lifting plate (602) is plugged into the rotating mounting seat (401); the lifting plate (602) is located at the etching groove (401); 011) interval; a drying installation cylinder (603) is fixedly installed on the lifting plate (602); a valve is provided on the drying installation cylinder (603); the electric heating fan (604) is fixedly installed on the drying installation cylinder (603); two liquid guide tubes (605) are fixedly installed on the lifting plate (602), and valves are respectively provided on the two liquid guide tubes (605); the two liquid guide tubes (605) are respectively used for liquid inlet and liquid discharge, and the liquid guide tube (605) used for liquid inlet is externally connected to a cleaning liquid pump.

10. A wafer etching method, applied to a wafer etching device as claimed in any one of claims 1 to 9; characterized in that: The steps include: a. The wafer to be etched is cleaned, and after cleaning, the wafer to be etched is dried. The cleaning environment is carried out in a dust-free workshop; b. After drying, the wafer is etched using a wafer etching device. The etching solution concentration and etching time are adjusted according to the etching requirements. During the etching process, the back side of the wafer is kept sealed to prevent the etching solution from corroding the non-etching surface of the wafer. After the etching surface of the wafer is etched by the etching solution, the wafer surface is cleaned and dried again.

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