Etching and photoresist removing integrated cavity

Abstract

The invention discloses an etching and degumming integrated cavity, which comprises a working chamber, a turnover mechanism, an etching mechanism and a degumming mechanism, and is characterized in that the turnover mechanism is rotatably suspended in the working chamber and divides an inner cavity of the working chamber into an etching cavity and a degumming cavity, the etching mechanism is used for realizing etching of a wafer in the etching cavity, and the degumming mechanism is used for realizing degumming of the wafer in the degumming cavity; the turnover mechanism comprises a spherical shell, a first carrying table, a second carrying table, a turnover driver and a jacking mechanism, the first carrying table and the second carrying table are symmetrically arranged at the two ends of the spherical shell, the jacking mechanism can be matched with the wafer feeding equipment to transfer wafers for the first carrying table and the second carrying table, and the turnover driver is used for driving the spherical shell to rotate; the position of the first carrying table and the position of the second carrying table are exchanged, and the wafer can be sequentially subjected to etching and photoresist removing treatment in the working chamber; according to the invention, the etching function and the photoresist removing function are integrated in one cavity, so that the transfer frequency and the waiting time of the wafer between different devices are reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of wafer surface treatment, and in particular to an integrated etching and degumming chamber. Background Art

[0002] In semiconductor chip manufacturing, micro-electromechanical systems (MEMS) processing and other precision micro-nano processing industries, etching and stripping are indispensable and critical steps that require extremely high process accuracy and efficiency.

[0003] In the traditional production process, etching and stripping processes rely on different independent equipment to complete. In the etching process, the material in a specific area of ​​the wafer surface is removed by chemical or physical methods to form the required circuit pattern or microstructure; and the stripping step is to remove the photoresist on the wafer surface for protection and auxiliary etching after the etching is completed. However, there is a lack of effective integration and coordination between these independent equipment. When preparing wafers, wafers need to be frequently transferred between equipment, which not only requires the use of complex transmission systems, which is easy to consume a lot of time, but also inevitably increases the risk of wafers being contaminated by particles and mechanically damaged, thereby affecting the yield of the product and leading to increased production costs.

[0004] In addition, with the rapid development of the semiconductor industry and the continuous expansion of production scale, the use of a large number of independent equipment has made the production space extremely tight. The increase in equipment floor space not only means that companies need to invest more funds in site leasing and construction, but also increases the difficulty of equipment management and maintenance, further increasing operating costs. Summary of the invention

[0005] The purpose of the present application is to overcome the deficiencies in the prior art and provide an integrated etching and degumming chamber.

[0006] The present application provides an integrated etching and degumming chamber, comprising: a studio for providing space for wafer processing; a flip mechanism, which is rotatably suspended in the studio and divides the inner cavity of the studio into an etching chamber and a degumming chamber: an etching mechanism, which is used to realize etching of the wafer in the etching chamber; a degumming mechanism, which is used to realize degumming of the wafer in the degumming chamber; wherein the flip mechanism comprises: a spherical shell, the top and bottom surfaces of the spherical shell are arranged in a plane, and the peripheral surface connecting the top and bottom surfaces is arranged in a spherical surface; a first carrier, which is arranged on the top surface; a second carrier, which is arranged on the bottom surface, the first carrier and the second carrier are symmetrically arranged, when one of the first carrier and the second carrier is in the etching chamber, the other is in the degumming chamber, and the first carrier and the second carrier both adopt electrostatic suction cups; a flip driver, which is used to drive the spherical shell to rotate to exchange the positions of the first carrier and the second carrier; a lifting mechanism, which is arranged in the spherical shell, and the lifting mechanism comprises: a first ejector pin, a first The carrier is provided with a first through hole, through which the first ejector pin can pass; the second carrier is provided with a second through hole, through which the second ejector pin can pass; a lifting driver is used to drive the first ejector pin to approach or move away from the first through hole, and the second ejector pin to approach or move away from the second through hole; when the first carrier is located in the etching chamber, the lifting driver drives the first ejector pin to rise, through which the first ejector pin can pass to receive the wafer; after obtaining the wafer, the lifting driver drives the first ejector pin to descend, so that the wafer falls onto the first carrier, and the first carrier can fix the wafer by electrostatic adsorption; after completing the etching of the wafer, the flip driver drives the spherical shell to rotate, so that the first carrier carries the wafer into the degumming chamber, and the second carrier enters the etching chamber; the lifting driver drives the second ejector pin to rise, through which the second ejector pin can pass to receive the wafer; at the same time, the wafer on the first carrier can be degummed in the degumming chamber.

[0007] Furthermore, the integrated etching and degumming chamber also includes a sealing mechanism, which is arranged between the spherical shell and the working room, and is used to prevent the gases in the etching chamber and the degumming chamber from communicating with each other; a circle of annular grooves is provided on the inner wall of the working room; the sealing mechanism includes: a magnetic fluid filled in the annular groove, and the magnetic fluid can form a sealing liquid film under the action of a magnetic field; an elastic sealing lip, which is arranged on the circumferential surface of the spherical shell; under normal working conditions, the spherical shell is stationary, the elastic sealing lip is tightly attached to the sealing liquid film, and the magnetic fluid and the elastic sealing lip work together to achieve sealing between the spherical shell and the working room.

[0008] Furthermore, a first film inlet is provided at the upper part of the studio and a second film inlet is provided at the lower part, the first film inlet is connected to the etching chamber, and the second film inlet is connected to the degumming chamber; the wafer to be etched can enter the studio through the first film inlet; the wafer that has completed etching and degumming can leave the studio through the second film inlet.

[0009] Furthermore, a first air inlet and a first air outlet are provided at the upper portion of the working room, and the etching reaction gas can enter the etching chamber through the first air inlet and can be discharged from the etching chamber through the first air outlet; a second air inlet and a second air outlet are provided at the lower portion of the working room, and the degumming reaction gas can enter the degumming chamber through the second air inlet and can be discharged from the degumming chamber through the second air outlet; the first air outlet and the second air outlet are adjacent to the connection position between the spherical shell and the working room.

[0010] Furthermore, the integrated etching and degumming chamber also includes a temperature control mechanism, which is used to adjust the temperature of the first carrier and the second carrier; the temperature control mechanism can cool down the first carrier or the second carrier in the etching chamber, and can heat up the second carrier or the first carrier in the degumming chamber.

[0011] Furthermore, temperature control channels are provided in both the first platform and the second platform; the temperature control mechanism includes a heating pipe and a cooling pipe; when the first platform or the second platform is in the etching chamber, the cooling pipe is connected to the temperature control channel, and the coolant can enter the temperature control channel through the cooling pipe to cool the first platform or the second platform; when the first platform or the second platform is in the degumming chamber, the heating pipe is connected to the temperature control channel, and the heating agent can enter the temperature control channel through the heating pipe to heat the first platform or the second platform.

[0012] Furthermore, the lifting driver includes: a gear and a rack, the rack is arranged between the first ejector and the second ejector, when the gear is meshed with the rack, the gear rotates, and the rack can lift the first ejector or the second ejector under the transmission of the gear; a first mounting plate, a plurality of first ejectors are arranged on the first mounting plate; a second mounting plate, a plurality of second ejectors are arranged on the second mounting plate; a first elastic member, one end of the first elastic member is connected to the first mounting plate, and the other end is connected to the inner top surface of the spherical shell; a second elastic member, one end of the second elastic member is connected to the second mounting plate, and the other end is connected to the inner bottom surface of the spherical shell; when the rack lifts the first mounting plate or the second mounting plate, the first elastic member or the second elastic member can both perform adaptive deformation and keep the first mounting plate and the second mounting plate stable after the rack is separated from the first mounting plate or the second mounting plate.

[0013] Furthermore, the flip driver can drive the spherical shell to rotate and the gear to rotate; the flip driver includes a flip motor, and a first driving wheel and a second driving wheel are arranged at intervals on the output shaft of the flip motor; the flip mechanism also includes: a rotating joint, the spherical shell is rotatably connected to the studio through the rotating joint, and the rotating joint is a tubular hollow structure; a rotating shaft, which is passed through the rotating joint, and the gear is arranged on the rotating shaft; a first driven wheel, which is sleeved on the rotating joint and linked to the first driving wheel through a first belt; a second driven wheel, which is sleeved on the rotating shaft and linked to the second driving wheel through a second belt; a first tensioning wheel, which can cooperate with the first driving wheel and the first driven wheel to tension the first belt; and a second tensioning wheel, which can cooperate with the first driving wheel and the first driven wheel to tension the first belt. The second driving wheel and the second driven wheel tension the second belt; the first driving member is used to drive the first tensioning wheel to approach or move away from the first belt to change the tensioning state of the first belt; the second driving member is used to drive the second tensioning wheel to approach or move away from the second belt to change the tensioning state of the second belt; the second belt is in a slipping state and the first belt is in a tensioned state, and the flipping motor drives the first driving wheel to rotate, and the first driven wheel and the rotating joint can be driven to rotate through the first belt, thereby realizing the rotation of the spherical shell; the first belt is in a slipping state and the second belt is in a tensioned state, and the flipping motor drives the second driving wheel to rotate, and the second driven wheel and the rotating shaft can be driven to rotate through the second belt, thereby realizing the rotation of the gear.

[0014] Furthermore, the lifting mechanism also includes a position avoidance driving member, which is used to drive the rack to approach or move away from the gear; when the spherical shell rotates, the rack moves away from the gear, which can avoid the gear and the rack from damaging each other.

[0015] Furthermore, the first carrier and the second carrier both include: a receiving table for receiving the wafer; an annular pressure ring that can press against the edge of the wafer from top to bottom to fix the wafer on the receiving table; wherein the annular pressure ring is linked to the first ejector pin or the second ejector pin and can rise and fall with the first ejector pin or the second ejector pin; when the annular pressure ring rises, the wafer to be etched can enter between the receiving table and the annular pressure ring and be received by the first ejector pin or the second ejector pin; after the annular pressure ring descends, it can press the wafer against the receiving table and expose the surface of the wafer to the inner ring of the annular pressure ring, so that the surface of the wafer can be etched and de-glued.

[0016] The present application provides an integrated etching and degumming chamber, comprising a studio, a flipping mechanism, an etching mechanism and a degumming mechanism. The flipping mechanism can be rotatably suspended in the studio and divides the inner cavity of the studio into an etching chamber and a degumming chamber. The flipping mechanism comprises a spherical shell, a first carrier, a second carrier, a flipping driver and a lifting mechanism. The first carrier and the second carrier are symmetrically arranged at both ends of the spherical shell. The flipping driver is used to drive the spherical shell to rotate to exchange the positions of the first carrier and the second carrier. The lifting mechanism can cooperate with a wafer loading device to transfer wafers to the first carrier and the second carrier. The present application reduces the number of transfers and waiting time of wafers between different devices by integrating etching and degumming functions in one chamber, thereby solving the problem of The problem of low efficiency of step-by-step operation is solved; etching and degumming are carried out continuously in the same chamber, and there is no need to transfer the wafer from one device to another, which greatly shortens the overall processing time and improves production efficiency; at the same time, the integrated etching and degumming chamber provided by the present application has a compact structure, which can reduce the equipment footprint, reduce site rental, equipment procurement and maintenance costs, and is conducive to reducing production costs; in addition, the integrated etching and degumming chamber provided by the present application no longer requires frequent transfer of wafers, and the two surface treatments of the wafer can be completed in one chamber. The reduction in the number of transfers reduces the risk of damage to the wafer, and can reduce the possibility of the wafer being damaged by collision, contamination, etc. during the transfer process, which helps to improve product quality and yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of an integrated etching and degumming chamber provided in this application; Figure 2 for Figure 1 An enlarged view of a portion of the structure in the etching and degumming integrated cavity shown; Figure 3 for Figure 1 A schematic diagram of the structure of the first carrier and the related lifting mechanism in the etching and degumming integrated chamber shown; Figure 4 A schematic diagram of the structure of another integrated etching and degumming chamber provided in the present application; Figure 5 A schematic diagram of the structure of another integrated etching and degumming chamber provided in the present application. DETAILED DESCRIPTION

[0018] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0019] The present application provides an integrated etching and degumming chamber, including: a studio 100, used to provide space for wafer processing; a flip mechanism 200, which is rotatably suspended in the studio 100 and divides the inner cavity of the studio 100 into an etching chamber 101 and a degumming chamber 102: an etching mechanism 310, used to realize etching of the wafer in the etching chamber 101; a degumming mechanism 320, used to realize degumming of the wafer in the degumming chamber 102.

[0020] For details, please refer to Figure 1 In the illustrated embodiment, the inner cavity of the studio 100 is roughly cylindrical, the main body of the flip mechanism 200 is roughly spherical, and the flip mechanism 200 is rotatably suspended in the middle of the studio 100 in a tangential manner to the spherical surface, and divides the inner cavity of the studio 100 into an etching chamber 101 disposed on the upper side and a degumming chamber 102 disposed on the lower side.

[0021] The etching mechanism 310 is composed of a coil disposed on the top of the etching chamber 101. The etching chamber 101 is provided with an air inlet and an air outlet, the air inlet is connected to the etching reaction gas supply device, and the air outlet is connected to the vacuum pumping device.

[0022] During the etching process, the wafer is supported and fixed by the carrier in the etching chamber 101, the coil is energized to generate an electromagnetic field, and the etching reaction gas enters the etching chamber 101 through the air inlet. Under the action of the electromagnetic field, it is excited to form an active plasma, which can react chemically with the material on the surface of the wafer, thereby achieving etching of the wafer. At the same time, the vacuum equipment can remove the gas that does not participate in the reaction and the waste generated by the etching, so as to control the rate and stability of the etching reaction and avoid the etching effect being affected by too high or too low gas pressure; the waste generated by the reaction is discharged to ensure the relative stability of the gas composition in the chamber, providing a continuous and stable environment for the etching reaction.

[0023] The debonding mechanism 320 adopts an RPS mechanism, which is composed of a radio frequency power supply, a matching network, a plasma generator, etc. The radio frequency power supply is used to provide energy, the matching network is used to optimize power transmission, and the plasma generator is used to generate plasma in the debonding chamber 102. The debonding chamber 102 is also provided with an air inlet and an air outlet, the air inlet is connected to the debonding reaction gas supply device, and the air outlet is connected to the vacuum pumping device.

[0024] The inlet and outlet of the etching chamber 101 and the inlet and outlet of the debonding chamber 102 are independent of each other and do not affect each other.

[0025] After etching is completed, the flip mechanism 200 flips 180° and sends the wafer into the degumming chamber 102, and the degumming reaction gas enters the degumming chamber 102 through the air inlet. The RF power supply in the RPS mechanism generates a high-frequency current, which is transmitted to the plasma generator through the matching network. The plasma generator ionizes the degumming reaction gas under the action of the high-frequency electric field to generate plasma. These plasmas are highly active and can react chemically with substances such as photoresist on the surface of the wafer, decomposing or gasifying them, thereby achieving the purpose of degumming. At the same time, the vacuum equipment can remove gases that do not participate in the reaction and waste generated by degumming, avoid the accumulation of waste gas affecting the degumming effect, and maintain the air pressure in the degumming chamber stable, ensuring that the degumming reaction is carried out under appropriate pressure conditions.

[0026] The flip mechanism 200 includes: a spherical shell 210, the top and bottom surfaces of the spherical shell 210 are arranged in a plane, and the peripheral surface connecting the top and bottom surfaces is arranged in a spherical surface; a first carrier 220, which is arranged on the top surface; a second carrier 230, which is arranged on the bottom surface, and the first carrier 220 and the second carrier 230 are arranged symmetrically. When one of the first carrier 220 and the second carrier 230 is in the etching chamber 101, the other is in the degumming chamber 102. The first carrier 220 The first carrier 220 and the second carrier 230 both adopt an electrostatic suction cup; a flip driver is used to drive the spherical shell 210 to rotate so as to exchange the positions of the first carrier 220 and the second carrier 230; a lifting mechanism is arranged in the spherical shell 210, and the lifting mechanism includes: a first ejector pin 241, a first through hole is arranged on the first carrier 220, and the first ejector pin 241 can pass through the first through hole; a second ejector pin 242, a second through hole is arranged on the second carrier 230, and the second ejector pin 242 can pass through the second through hole through the second through-hole; a lifting driver, used to drive the first ejector pin 241 to approach or move away from the first through-hole, and the second ejector pin 242 to approach or move away from the second through-hole; when the first carrier 220 is located in the etching chamber 101, the lifting driver drives the first ejector pin 241 to rise, and the first ejector pin 241 can pass through the first through-hole and receive the wafer; after obtaining the wafer, the lifting driver drives the first ejector pin 241 to descend, so that the wafer falls on the first carrier 220, and the first carrier 220 can fix the wafer by electrostatic adsorption; after completing the etching of the wafer, the flip driver drives the spherical shell 210 to rotate, so that the first carrier 220 carries the wafer into the debonding chamber 102, and the second carrier 230 enters the etching chamber 101; the lifting driver drives the second ejector pin 242 to rise, and the second ejector pin 242 can pass through the second through-hole and receive the wafer; at the same time, the wafer on the first carrier 220 can be debonded in the debonding chamber 102.

[0027] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the top and bottom surfaces of the spherical shell 210 are planes, and the peripheral surface is a spherical surface, which is tangent to the inner wall of the working room 100; the spherical design of the peripheral surface helps the spherical shell 210 to rotate in the working room 100, and the planar design of the top and bottom surfaces is convenient for installing the carrier, and can avoid directly adding the carrier, increasing the outer diameter, and affecting the rotation.

[0028] Continue to refer to Figure 1 and Figure 2 The first carrier 220 and the second carrier 230 are symmetrically arranged and respectively located on the top and bottom surfaces of the spherical shell 210. The first carrier 220 and the second carrier 230 both use electrostatic chucks, which can fix the wafer by electrostatic adsorption to ensure the stable position of the wafer during the processing.

[0029] Specifically, an electrode is provided inside the electrostatic chuck. When the electrode is energized, an electrostatic field is generated on the surface of the chuck. Wafers are usually made of semiconductor materials and have a certain conductivity or polarizability. Under the action of the electrostatic field, the surface of the wafer will induce a charge opposite to that of the electrostatic chuck electrode, thereby generating an electrostatic attraction between the wafer and the electrostatic chuck, tightly adsorbing the wafer to the surface of the carrier. Even when it is flipped and inverted, the electrostatic chuck can still reliably and firmly adsorb the wafer.

[0030] The flip driver can be any driving member capable of providing rotational power, such as a rotary cylinder and a motor. Figure 5 In the illustrated embodiment, the fixed end of the flip actuator is disposed outside the working room 100 for ease of installation and maintenance, and the output end of the flip actuator extends into the working room 100 through a rotating shaft and is connected to the spherical shell 210, and can drive the spherical shell 210 to rotate and flip over while keeping the vertical position unchanged, thereby exchanging the positions of the first carrier 220 and the second carrier 230.

[0031] Combined with reference Figure 4 or Figure 5 In the illustrated embodiment, the first carrier 220 is on the top and is located in the etching chamber 101, and the second carrier 230 is inverted and located in the debonding chamber 102. The first carrier 220 is provided with three first through holes extending longitudinally, and a first ejector pin 241 is inserted into any of the first through holes, and the three first through holes are distributed along the three corners of an equilateral triangle. The second carrier 230 is provided with three second through holes extending longitudinally, and a second ejector pin 242 is inserted into any of the second through holes, and the three second through holes are also distributed along the three corners of an equilateral triangle.

[0032] The lifting driver may be any driving structure such as a pneumatic cylinder or an electric cylinder that can drive the first ejector pin 241 and the second ejector pin 242 to move vertically.

[0033] It is easy to understand that the wafer is delivered into the studio 100 by a wafer loading device (such as a robot). To facilitate the handover, the carrier needs to be in an upright state. Therefore, the etching chamber 101 is set on the top to facilitate the etching process first. A wafer inlet is provided on one side of the etching chamber 101. After the wafer loading device delivers the wafer to be processed into the etching chamber 101, the corresponding ejector pin rises, which can push the wafer away from the robot. When the robot is withdrawn, the ejector pin is lowered, and the wafer can fall onto the carrier, and the carrier adsorbs and fixes the wafer.

[0034] In one embodiment, the lifting mechanism includes two groups of lifting drivers, which are respectively connected to the first ejector pin 241 and the second ejector pin 242. At this time, the two groups of ejector pins can independently perform lifting movements as needed.

[0035] In another embodiment, the lifting mechanism includes only one set of lifting drivers. When the first stage 220 is located in the etching chamber 101, the lifting driver can drive the first ejector pin 241 to perform lifting and lowering movements. When the second stage 230 is located in the etching chamber 101, the lifting driver can drive the second ejector pin 242 to perform lifting and lowering movements. For example, the lifting driver includes a motor, a gear and a rack. The rack extends vertically. The first ejector pin 241 and the second ejector pin 242 are respectively arranged at both ends of the rack. The gear is meshed with the rack. The motor drives the gear to rotate. The gear can drive the rack to move closer to the first stage 220 and away from the second stage 230, or closer to the second stage 230 and away from the first stage 220. Since it is not necessary for the two sets of ejectors to work at the same time, one set of lifting drivers can meet the working needs of the two sets of ejectors, thereby simplifying the driving structure, simplifying the operation control, and reducing the equipment cost.

[0036] The present application does not limit the specific configuration of the lifting mechanism, as long as it can cooperate with the wafer loading equipment for the carrier to receive the wafer.

[0037] Taking the first carrier 220 being located in the etching chamber 101 as an example, in a specific implementation, before etching, the lifting driver drives the first ejector pin 241 to rise, and the first ejector pin 241 passes through the first through hole and receives the wafer; after receiving the wafer, the lifting driver drives the first ejector pin 241 to descend, and the wafer falls onto the first carrier 220, and the first carrier 220 fixes the wafer by electrostatic adsorption; etching starts, and the etching reaction gas enters the etching chamber 101, the coil is energized, the etching reaction gas is ionized, and plasma is generated, and the plasma bombards the wafer. circle, and etching is realized; after etching is completed, the flip driver drives the spherical shell 210 to rotate, so that the first stage 220 and the second stage 230 exchange positions; the first stage 220 carries the etched wafer into the degumming chamber 102, and the second stage 230 enters the etching chamber 101; the second stage 230 can receive a new wafer and repeat the above etching process; the degumming mechanism 320 is started, and the photoresist and other substances on the surface of the wafer are removed by using the degumming reaction gas; in this way, the wafer can be subjected to etching and degumming treatment in the studio 100.

[0038] In the traditional wafer manufacturing process, etching and degumming are usually carried out in steps in different equipment or at different times and places, resulting in low production efficiency. The present application integrates the etching and degumming functions in one chamber, reduces the number of transfers and waiting time of wafers between different equipment, and solves the problem of low efficiency of step-by-step operation. Etching and degumming are carried out continuously in the same chamber, without the need to transfer the wafer from one device to another, which greatly shortens the overall processing time and improves production efficiency. At the same time, the integrated etching and degumming chamber provided by the present application has a compact structure, which can reduce the equipment footprint, reduce site rental, equipment procurement and maintenance costs, and is conducive to reducing production costs. In addition, the integrated etching and degumming chamber provided by the present application no longer needs to frequently transfer wafers, and the wafer can complete two surface treatments in one chamber. The reduction in the number of transfers reduces the risk of damage to the wafer, and can reduce the possibility of the wafer being damaged by collision, contamination, etc. during the transfer process, which helps to improve product quality and yield.

[0039] Since different processes are carried out in the etching chamber 101 and the desizing chamber 102, different reaction gases are required. If the gases in the two chambers are interconnected, the reaction gas for etching and the reaction gas for desizing are mixed, which will interfere with the normal progress of their respective processes and make it difficult to maintain stable gas pressure in the two chambers. Fluctuations in gas pressure may lead to unstable reaction rate, which can easily affect product quality.

[0040] To this end, the integrated etching and degumming chamber provided in the present application also includes a sealing mechanism, which is arranged between the spherical shell 210 and the working room 100 to prevent the gases in the etching chamber 101 and the degumming chamber 102 from communicating with each other.

[0041] In one embodiment, the circumference of the spherical shell 210 is tangent to the inner wall of the working room 100, and the tangent position is the connection position between the two; above and below the connection position, two sets of sealing rings are embedded on the circumference of the spherical shell 210, and the sealing rings are close to the tangent line.

[0042] Under normal working conditions, the spherical shell 210 is stationary, and the sealing ring is compressed between the spherical shell 210 and the working chamber 100. The sealing ring is deformed and can compensate for the gap between the two, thereby playing a sealing role.

[0043] Specifically, the sealing ring is made of a material with elasticity and chemical corrosion resistance, such as fluororubber, silicone rubber, etc. The sealing ring is annular, and a circle of grooves for installing the sealing ring is provided on the outer peripheral surface of the spherical shell 210. The size and shape of the grooves are adapted to the sealing ring and can stably accommodate the sealing ring. When the spherical shell 210 rotates, the sealing ring will follow its movement until the spherical shell 210 rotates 180° and the sealing ring is fully compressed between the spherical shell 210 and the working room 100 again. After the sealing ring is deformed by force, it can fit tightly between the spherical shell 210 and the working room 100, effectively blocking the flow of gas.

[0044] In another embodiment, a circle of annular mounting holes is provided on the outer surface of the spherical shell 210 and / or the inner wall of the working room 100; the mounting holes are located close to the tangent position of the spherical shell 210 and the working room 100; the sealing mechanism includes an airbag and an air pump, the airbag is provided in the mounting hole, and the air pump is used to inflate the airbag; before the spherical shell 210 rotates, the airbag is deflated; after the rotation of the spherical shell 210 is completed, the airbag is inflated and bulged, which can not only fasten the spherical shell 210 and the inner wall of the working room 100, but also fill the gap and improve the sealing of the connection between the spherical shell 210 and the working room 100.

[0045] In another embodiment, a circle of annular grooves is provided on the inner wall of the working room 100; the sealing mechanism includes: a magnetic fluid 110 filled in the annular groove, and the magnetic fluid 110 can form a sealing liquid film under the action of a magnetic field; an elastic sealing lip 120, which is arranged on the circumferential surface of the spherical shell 210; under normal working conditions, the spherical shell 210 is stationary, the elastic sealing lip 120 is in close contact with the sealing liquid film, and the magnetic fluid 110 and the elastic sealing lip 120 work together to achieve sealing between the spherical shell 210 and the working room 100.

[0046] For details, please refer to Figure 4 In the illustrated embodiment, a circle of annular grooves is provided in the middle of the inner wall of the working room 100, and the annular grooves are filled with magnetic fluid 110; the position of the magnetic fluid 110 is the position where the spherical shell 210 is tangent to the inner wall of the working room 100. Therefore, under normal working conditions, the magnetic fluid 110 can wrap the circumference of the spherical shell 210 for the part tangent to the working room 100.

[0047] Magnetic fluid 110 is a new type of functional material, which is formed by nano-scale magnetic particles evenly dispersed in a base liquid. It has both the fluidity of liquid and the characteristics of magnetic materials. When there is no external magnetic field, it presents the state of ordinary liquid; under the action of a magnetic field (such as setting a coil outside the annular groove to generate a magnetic field), the magnetic particles will gather and arrange under the action of the magnetic field force, thereby forming a sealed liquid film with a certain strength and stability.

[0048] Optionally, the output shaft of the flip actuator passes through the magnetic fluid 110 and is connected to the spherical housing 210 . In this case, the magnetic fluid 110 can also seal the connection portion between the flip actuator and the working chamber 100 .

[0049] Continue to refer to Figure 4 The elastic sealing lip 120 is disposed around the circumference of the spherical housing 210 and is tangential to the working chamber 100. Under normal working conditions, the elastic sealing lip 120 faces and is in close contact with the magnetic fluid 110.

[0050] The elastic sealing lip 120 is usually made of a material that is elastic, wear-resistant and chemically resistant, such as fluororubber. The lip portion of the elastic sealing lip 120 is set to be smooth and rounded. This design can reduce the friction and scraping between it and the magnetic fluid 110. When the spherical shell 210 rotates, the lip of the elastic sealing lip 120 can scrape the surface of the magnetic fluid 110 relatively smoothly, reducing the disturbance to the magnetic fluid 110. At the same time, the elasticity of the lip allows it to have a certain buffer when it contacts the magnetic fluid 110, avoiding too harsh contact and disturbing the magnetic fluid 110.

[0051] Specifically, when an external magnetic field is applied to the annular groove filled with magnetic fluid 110, the magnetic particles in the magnetic fluid are affected by the magnetic field force and are arranged along the direction of the magnetic field lines, forming a sealing liquid film similar to a "liquid barrier". Since the magnetic fluid 110 has fluidity, this sealing liquid film can adapt to the surface shape of the spherical shell 210 and the elastic sealing lip 120. Even if there are certain processing errors in the spherical shell 210 or the elastic sealing lip 120 or there is a slight shake during the working process, the sealing liquid film can always be in close contact with the spherical shell 210 and the elastic sealing lip 120, effectively blocking the gas in the etching chamber 101 and the degumming chamber 102 from communicating with each other.

[0052] The elastic sealing lip 120 can achieve auxiliary sealing by relying on its own elastic properties. Under normal working conditions, the spherical shell 210 is stationary, and the elastic sealing lip 120 is tightly attached to the sealing liquid film formed by the magnetic fluid 110. The sealing liquid film provides a basic sealing interface for the elastic sealing lip 120. When the sealing liquid film is affected by external factors, such as changes in gas pressure, slight displacements of the spherical shell 210, etc., the elastic sealing lip 120 can adapt to these changes through its own elastic deformation, thereby maintaining the integrity of the seal. The elasticity of the elastic sealing lip 120 enables it to fill in the tiny gaps or unevenness that may exist in the sealing liquid film. During the operation of the equipment, even if the sealing liquid film is subject to some slight disturbances, the elastic sealing lip 120 can maintain a close fit with the sealing liquid film through its own elastic deformation, further improving the reliability of the seal and preventing gas leakage.

[0053] In practical applications, on the one hand, mechanical vibration, external forces generated by equipment operation, or a large pressure difference on both sides of the seal may cause the magnetic fluid 110 to overflow the groove, resulting in seal failure. On the other hand, when the spherical shell 210 rotates, it may drive the surrounding fluid to flow and cause disturbances to the magnetic fluid 110.

[0054] To this end, a baffle with densely distributed small holes can be set at the opening of the annular groove near the spherical shell 210. The baffle can not only limit the excessive flow of the magnetic fluid 110 and prevent it from overflowing out of the groove, but also allow the magnetic fluid 110 to maintain communication with the spherical shell 210 through the small holes under the action of the magnetic field, thereby maintaining the sealing function.

[0055] Alternatively, a stronger electromagnetic coil may be provided outside the annular groove, which can generate a stronger and more uniform magnetic field, so that the magnetic particles in the magnetic fluid 110 are bound by a greater magnetic force, thereby reducing the possibility that the magnetic fluid 110 rotates with the spherical shell 210. At the same time, a patch made of a material with high magnetic permeability may be arranged in the annular groove to enhance the gathering effect of the magnetic field.

[0056] Alternatively, the annular groove may be designed into a special shape, such as a trapezoid, so that the magnetic fluid 110 forms a wedge-like shape in the groove to increase the resistance to its outflow. Some protrusions or separation structures may also be provided in the annular groove to limit the flow path of the magnetic fluid 110 and prevent it from moving freely while following the rotation of the spherical shell 210.

[0057] Optionally, the spherical shell 210 is made of non-magnetic materials, such as stainless steel, ceramics, etc., which can avoid interfering with the magnetic field and facilitate the normal operation of the magnetic fluid 110 under the action of the magnetic field.

[0058] Optionally, the elastic sealing lip 120 is made of perfluororubber (FFKM).

[0059] Perfluororubber has excellent chemical corrosion resistance and can effectively resist the erosion of chemical substances on the seals, ensuring the long-term stable operation of the seals. Perfluororubber can maintain good performance in a wide temperature range, can withstand high temperature environments without obvious performance degradation, and can also maintain a certain elasticity at low temperatures to adapt to temperature changes in the working room caused by different processes. Due to its stable chemical properties, perfluororubber has good compatibility with the magnetic fluid 110, and will not chemically react with the magnetic fluid 110 or cause undesirable phenomena such as swelling, which is conducive to ensuring that the overall performance of the sealing mechanism is not affected. Perfluororubber also has good elasticity, can fit tightly to the inner wall of the studio 100 and the surface of the spherical shell 210, and has a certain wear resistance, which can meet the use requirements of the seal during the rotation of the spherical shell 210.

[0060] Optionally, the width of the elastic sealing lip 120 is greater than the width of the sealing liquid film, and under normal working conditions, the elastic sealing lip 120 can completely cover the sealing liquid film.

[0061] In this way, the elastic sealing lip 120 can not only cover the area where the magnetic fluid 110 is located, but also extend to the upper and lower sides of the annular groove opening and abut against the inner wall of part of the working room 100. At this time, the elastic sealing lip 120 can block the leakage path of the magnetic fluid 110 and form a more reliable sealing barrier. Even if the sealing liquid film fails or becomes weak in some cases, the elastic sealing lip 120 can still play an effective sealing role.

[0062] This application does not limit the specific configuration of the sealing mechanism.

[0063] A reliable sealing mechanism can avoid gas cross contamination and maintain stable air pressure in the chamber, so that the etching and degumming processes can be carried out more accurately and stably, thereby reducing product defects caused by gas interference and air pressure fluctuations and improving the processing quality and yield rate of wafers. Stable gas environment and air pressure conditions can also help reduce corrosion and damage to equipment components, extend the service life of equipment components such as the etching mechanism 310, the degumming mechanism 320, and the studio 100, and reduce equipment maintenance costs.

[0064] In one embodiment, only one film inlet is provided on the working room 100 , and the film inlet is connected to the etching chamber 101 .

[0065] In this embodiment, the wafer to be processed enters the etching chamber 101 through the wafer inlet. After etching is completed, the wafer is flipped over and enters the debonding chamber 102. After debonding is completed, it is flipped over again, so that the wafer returns to the etching chamber 101, and then returns to the original route through the wafer inlet and leaves the studio 100.

[0066] In another embodiment, a first film inlet is provided at the upper portion of the studio 100 and a second film inlet is provided at the lower portion, the first film inlet is connected to the etching chamber 101, and the second film inlet is connected to the degumming chamber 102; the wafer to be etched can enter the studio 100 through the first film inlet; the wafer that has completed etching and degumming can leave the studio 100 through the second film inlet.

[0067] In this embodiment, two wafer inlets are provided on the studio 100, wherein the first wafer inlet is used as the wafer inlet, and the second wafer inlet is used as the wafer outlet. When processing wafers, the wafer loading device delivers the wafer to be processed into the etching chamber 101 through the first wafer inlet, and the lifting mechanism works so that the wafer falls on the stage so that the wafer can be etched; after the etching is completed, the flip drive is started, and the position of the stage is exchanged so that the etched wafer enters the debonding chamber 102 so that the wafer can be debonded; after the debonding is completed, the wafer unloading device can enter the debonding chamber 102 through the second wafer inlet and take away the processed wafer.

[0068] It should be added that the wafer loading equipment and the wafer unloading equipment can be the same set of structures that facilitate the placement and removal of wafers, or they can be two different sets of structures, used to deliver wafers and take away wafers respectively.

[0069] Two independent wafer inlets are set up, one for wafer entry and one for exit, which clarifies the wafer entry and exit paths and avoids transmission confusion; clear wafer entry and exit channels, as well as the effective coordination of external loading and unloading equipment and internal mechanisms, can reduce the waiting time and operational errors of wafers during transmission, so as to facilitate the efficient operation of the entire etching and degumming process, and also increase the number of wafers processed per unit time. The continuous operation of wafer loading, etching, degumming and discharging ensures the continuity of the processing flow; efficient production processes can also reduce the idle time of equipment, improve equipment utilization, and further reduce production costs.

[0070] Optionally, a first air inlet and a first air outlet are provided at the upper portion of the studio 100, and the etching reaction gas can enter the etching chamber 101 through the first air inlet and can be discharged from the etching chamber 101 through the first air outlet; a second air inlet and a second air outlet are provided at the lower portion of the studio 100, and the degumming reaction gas can enter the degumming chamber 102 through the second air inlet and can be discharged from the degumming chamber 102 through the second air outlet; the first air outlet and the second air outlet are adjacent to the connection position between the spherical shell 210 and the studio 100.

[0071] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the etching chamber 101 is provided with a first gas inlet and a first gas outlet, the first gas inlet is connected to the etching reaction gas supply device, and the first gas outlet is connected to the first vacuum pumping device 410. The first gas outlet and the first vacuum pumping device 410 are arranged on the left side of the working room 100, near the connection position of the spherical shell 210 and the working room 100, and are located to the upper left of the connection position.

[0072] The etching reaction gas will enter the etching chamber 101 from the first gas inlet and be ionized in the etching chamber 101, thereby achieving etching of the wafer. During the etching process, the first vacuum pumping device 410 works, and the unreacted gas, waste gas generated by the reaction, impurities, etc. can be discharged from the etching chamber 101 through the first gas outlet under the action of the pressure difference.

[0073] Continue to refer to Figure 1 and Figure 2 The debonding chamber 102 is provided with a second air inlet and a second air outlet, the second air inlet is connected to the debonding reaction gas supply device, and the second air outlet is connected to the second vacuum pumping device 420. The second air outlet and the second vacuum pumping device 420 are also arranged on the left side of the working room 100, near the connection position between the spherical shell 210 and the working room 100, and at the lower left of the connection position. The first air outlet is adjacent to the second air outlet.

[0074] The debonding reaction gas will enter the debonding chamber 102 from the second gas inlet, and react with the photoresist and other substances on the surface of the wafer that has been etched in the debonding chamber 102, thereby debonding the wafer. During the debonding process, the second vacuum pumping device 420 works, and the unreacted gas, volatile impurities generated by the reaction, etc. can be discharged from the debonding chamber 102 through the second gas outlet under the action of the pressure difference.

[0075] The two gas outlets are located close to the connection between the spherical shell 210 and the working room 100. On the one hand, the flow characteristics of the gas in the cavity can be used to promote the rapid discharge of reaction products such as waste gas and impurities, thereby avoiding interference with the etching or degumming process in the cavity; on the other hand, the different reaction gases in the two cavities can be prevented from communicating with each other.

[0076] It is easy to understand that the connection position between the spherical shell 210 and the working chamber 100 is prone to gas leakage due to relative movement (rotation of the spherical shell 210), resulting in the interconnection of the two chambers. The first gas outlet and the second gas outlet are arranged near this position, and the characteristics of gas flow can be used to make the gas in the chamber be discharged preferentially from the gas outlet.

[0077] For example, when the gas in the etching chamber 101 leaks downward toward the debonding chamber 102 , since the first gas outlet is close to the leakage position, the gas tends to be discharged from the first gas outlet instead of flowing into the debonding chamber 102 .

[0078] Therefore, placing the two gas outlets near the connection between the spherical shell 210 and the studio 100 is equivalent to setting a "gas drainage channel" at a location prone to gas leakage, which can effectively reduce the possibility of the two chambers' gases communicating with each other due to leakage. By avoiding gas communication, the independence and stability of the gas environments of the two chambers can be guaranteed, so that the etching and degumming processes can be carried out under stable conditions, which is beneficial to the stability of the process and thus ensures the processing quality of the wafer.

[0079] Optionally, the integrated etching and degumming chamber provided in the present application also includes a temperature control mechanism, which is used to adjust the temperature of the first carrier 220 and the second carrier 230; the temperature control mechanism can cool down the first carrier 220 or the second carrier 230 in the etching chamber 101, and can heat up the second carrier 230 or the first carrier 220 in the degumming chamber 102.

[0080] It needs to be explained that etching reactions are usually accompanied by the generation of heat, which will cause the temperature of the wafer and the carrier to rise. Excessive temperature will have an adverse effect on etching. On the one hand, the increase in temperature will accelerate the chemical reaction rate, making it difficult to accurately control the etching process, which may lead to excessive or uneven etching, affecting the processing accuracy and quality of the wafer; on the other hand, high temperature may affect the material properties of the wafer, such as changing the electrical properties of the semiconductor material and reducing the performance and reliability of the product.

[0081] Therefore, cooling the carrier in the etching chamber 101 can effectively control the rate of the etching reaction, ensure the stability and accuracy of the etching process, and improve the etching quality of the wafer.

[0082] During the degumming process, the degumming reaction gas will react chemically with the photoresist and other substances on the surface of the wafer. Heating can speed up the rate of these chemical reactions, making the degumming process more efficient. This is because within a certain temperature range, the higher the temperature of substances such as photoresist, the stronger the reactivity with the degumming agent, and the faster the degumming speed. In addition, appropriate heating can also improve the fluidity and permeability of the degumming agent, allowing it to better contact with the photoresist, further improving the degumming effect. In some degumming processes, heating can also promote the volatilization of reaction products, making it easier to discharge them, thereby improving the thoroughness of degumming.

[0083] Therefore, heating the carrier in the degumming chamber 102 can effectively improve the degumming efficiency and optimize the degumming effect.

[0084] In one embodiment, the temperature control mechanism adopts a semiconductor cooling and heating module.

[0085] Specifically, a plurality of semiconductor cooling and heating modules are provided in the first carrier 220 and the second carrier 230. These modules are composed of P-type semiconductors and N-type semiconductors, and are connected in series or in parallel to form a temperature control array. Each module is equipped with an independent power control circuit to accurately control its cooling or heating state. A temperature sensor is also provided on the carrier to monitor the temperature of the carrier in real time and feed the temperature data back to the control system.

[0086] According to the Peltier effect, when direct current passes through a module composed of a P-type semiconductor and an N-type semiconductor, a temperature difference will be generated at both ends of the module. During the etching stage, the control system passes a current of a suitable direction to the semiconductor cooling and heating module located on the stage in the etching chamber 101, so that the cold surface of the module contacts the stage, absorbs the heat of the stage and the wafer, and achieves cooling. During the degumming stage, the direction of the current is changed so that the hot surface of the module contacts the stage, transfers heat to the stage, and achieves heating. The temperature sensor monitors the stage temperature in real time and feeds the data back to the control system. The control system adjusts the current size and direction according to the set temperature value to accurately control the stage temperature.

[0087] The temperature control method of the semiconductor cooling and heating module has a fast response speed and high temperature control accuracy. It can quickly and accurately control the temperature of the carrier to improve the stability and reliability of the etching and degumming process. Due to the precise temperature control, it can also reduce the etching and degumming quality problems caused by temperature fluctuations to improve product yield. At the same time, the structure of the semiconductor cooling and heating module is compact and does not take up too much space, which is conducive to the miniaturization of the equipment.

[0088] This application does not limit the specific configuration of the temperature control mechanism.

[0089] In a specific embodiment, a temperature control channel 223 is provided in each of the first carrier 220 and the second carrier 230; the temperature control mechanism includes a heating pipe and a cooling pipe; when the first carrier 220 or the second carrier 230 is in the etching chamber 101, the cooling pipe is connected to the temperature control channel 223, and the coolant can enter the temperature control channel 223 through the cooling pipe to cool the first carrier 220 or the second carrier 230; when the first carrier 220 or the second carrier 230 is in the debonding chamber 102, the heating pipe is connected to the temperature control channel 223, and the heating agent can enter the temperature control channel 223 through the heating pipe to heat the first carrier 220 or the second carrier 230.

[0090] Optionally, the coolant is liquid gallium.

[0091] The cooling system is mainly composed of a temperature control channel 223, a cooling pipe, a liquid storage tank and a circulation pump. The liquid storage tank is used to store liquid gallium and is equipped with a temperature regulating device to maintain the liquid gallium at a suitable low temperature; the cooling pipe connects the liquid storage tank and the temperature control channel 223, and the circulation pump is used to drive the liquid gallium to circulate in the cooling system. During the etching process, the circulation pump works to input the low-temperature liquid gallium in the liquid storage tank into the temperature control channel 223 through the cooling pipe pump; liquid gallium has good thermal conductivity, and when flowing through the temperature control channel 223, it can quickly absorb the heat generated by the etching reaction of the carrier and increase its own temperature; the heated liquid gallium then flows back to the liquid storage tank through the cooling pipe, and after being cooled by the temperature regulating device in the liquid storage tank, it re-participates in the circulation; the low-temperature liquid gallium flows continuously to achieve continuous cooling of the carrier.

[0092] Optionally, the temperature control channel 223 is provided with a tortuous pipeline structure so as to increase the contact area and contact time between the coolant and the carrier, thereby improving the heat exchange efficiency.

[0093] When the coolant (such as the above-mentioned liquid gallium or other high-efficiency coolant) flows in the temperature control channel 223, the larger contact area means that the coolant can more fully absorb the heat generated by the etching reaction of the carrier; the extended flow path can make the coolant stay in the carrier longer, so as to enhance the heat exchange effect. The coolant enters one end of the temperature control channel 223 from the cooling pipe, flows slowly along the winding pipe, and continuously absorbs the heat of the carrier during the flow process until it flows out from the other end of the temperature control channel 223, and then flows back to the liquid storage tank through the cooling pipe for cooling and recycling. In this process, the temperature control channel 223 is similar to an efficient heat collector, which continuously transfers the excess heat of the carrier to the coolant, ensuring that the temperature of the carrier is always maintained at the lower level required by the etching process, thereby ensuring the stability and accuracy of the etching process to improve the etching quality.

[0094] Optionally, the heating agent is supercritical carbon dioxide.

[0095] The heating system consists of a heating pipe, a temperature control channel 223, a high-pressure storage tank, a compressor and a heat exchanger. The high-pressure storage tank is used to store supercritical carbon dioxide. The heating pipe connects the high-pressure storage tank and the temperature control channel 223. The compressor is installed on the heating pipe and is used to pressurize the supercritical carbon dioxide to keep it in a supercritical state. The heat exchanger can adjust its temperature as needed during the supercritical carbon dioxide circulation process. During the degumming process, the compressor is started to press the supercritical carbon dioxide in the high-pressure storage tank into the temperature control channel 223 through the heating pipe. Supercritical carbon dioxide has unique physical properties. Its density is close to that of liquid, and it can carry a large amount of heat. Its diffusion coefficient is close to that of gas, and its heat and mass transfer efficiency is high. In the temperature control channel 223, the supercritical carbon dioxide transfers the heat it carries to the carrier to achieve temperature increase. The supercritical carbon dioxide after cooling flows back to the heat exchanger through the heating pipe, absorbs heat in the heat exchanger to heat up again, and then returns to the high-pressure storage tank to prepare to participate in the cycle again. The supercritical carbon dioxide flows continuously to achieve continuous heating of the carrier.

[0096] Optionally, the temperature control channel 223 is distributed in a fine mesh inside the carrier, which can increase the contact area between the heating agent and the carrier.

[0097] When the heating agent (such as the supercritical carbon dioxide or other high-efficiency heating agent) flows in the temperature-controlled flow channel 223, the larger contact area and longer flow path enable the heat carried by the heating agent to be more evenly and fully transferred to the carrier, so that the carrier is quickly and evenly heated, thereby meeting the temperature requirements of the degumming process. Uniform heating is crucial to the degumming effect, which can make the degumming reaction gas react more fully with the photoresist and other substances on the wafer surface, accelerate the degumming speed, improve the thoroughness of degumming, and thus improve product quality.

[0098] In one embodiment, the flipping mechanism 200 also includes a rotating joint 251, and the spherical shell 210 is rotatably connected to the working room 100 through the rotating joint 251, and the rotating joint 251 is a tubular hollow structure; two groups of temperature control channels 223 are provided in the first carrier 220 and the second carrier 230, one group of temperature control channels 223 is used for the circulation of coolant, and the other group of temperature control channels 223 is used for the circulation of heating agent; the two groups of temperature control channels 223 are respectively connected to a set of heating pipes and cooling pipes; the heating pipes and cooling pipes are hoses, and the hoses can be extended into the spherical shell 210 through the rotating joint 251 to communicate with the corresponding temperature control channels 223.

[0099] In this embodiment, since the rotary joint 251 is the rotating axis of the spherical shell 210, the hose is relatively fixedly connected to the rotary joint 251. When the rotary joint 251 rotates synchronously with the spherical shell 210, the rotational motion will not affect the connection between the hose and the temperature control channel 223, and the coolant and the heating agent can flow smoothly as needed.

[0100] In another embodiment, the flip mechanism 200 further includes a rotating joint 251, through which the spherical shell 210 is rotatably connected to the working room 100, and the rotating joint 251 is a tubular hollow structure; both the heating pipe and the cooling pipe extend into the spherical shell 210 through the rotating joint 251; only one set of temperature control channels 223 is provided in each of the first carrier 220 and the second carrier 230; a first sealing joint is provided at the inlet and outlet of the temperature control channel 223, and the first sealing joint is made of a corrosion-resistant and high-temperature resistant metal material (such as stainless steel); a magnetic sealing ring is provided on the inner wall of the first sealing joint, and the magnetic sealing ring is made of a magnetic material with certain elasticity and sealing performance, such as magnetic rubber or magnetic silicone; a second sealing joint is provided at the end of the cooling pipe and the heating pipe for connecting the temperature control channel 223, and a slidable magnetic outer sleeve is provided on the second sealing joint, and the magnetic outer sleeve is made of a magnetic material that can attract the magnetic sealing ring; the inner diameter of the magnetic outer sleeve is slightly larger than the outer diameter of the second sealing joint, and the magnetic outer sleeve can slide on the second sealing joint. A fixed mounting frame is provided inside the rotary joint 251, and the fixed mounting frame is rotatably arranged inside the rotary joint 251 through a bearing; the cooling pipe and the heating pipe are arranged on the fixed mounting frame, and when the rotary joint 251 drives the spherical shell 210 to rotate, the positions of the cooling pipe and the heating pipe remain unchanged, and the cooling pipe always points to the etching chamber 101, and the heating pipe always points to the debonding chamber 102. The cooling pipe and the heating pipe are connected to a displacement driver, and the displacement driver can adopt any driving structure such as a cylinder, an electric cylinder, etc. that can drive the cooling pipe and the heating pipe to approach or move away from the temperature control flow channel 223.

[0101] When the spherical shell 210 needs to rotate, the displacement driver drives the cooling pipe and the heating pipe away from the temperature control channel 223. During the movement, the magnetic outer ring gradually moves away from the magnetic sealing ring, and the magnetic force between the two gradually weakens until the first sealing joint and the second sealing joint are completely disengaged; at this time, the cooling pipe and the heating pipe are disconnected from the temperature control channel 223, which can prevent the pipes from being twisted or damaged during the rotation of the spherical shell 210.

[0102] After the spherical shell 210 rotates to its proper position, the displacement driver drives the cooling pipe and the heating pipe to approach the temperature control channel 223. As the first sealing joint and the second sealing joint gradually approach each other, the magnetic force between the magnetic outer ring and the magnetic sealing ring gradually increases, and finally the first sealing joint and the second sealing joint can be tightly adsorbed together to achieve a sealed connection. At this time, the coolant or heating agent can smoothly flow between the cooling pipe, the heating pipe and the temperature control channel 223 through the two sets of sealing joints to achieve cooling or heating of the carrier.

[0103] Optionally, the lifting driver includes: a gear 243 and a rack 244, wherein the rack 244 is disposed between the first ejector pin 241 and the second ejector pin 242, and when the gear 243 is meshed with the rack 244, the gear 243 rotates, and the rack 244 can lift the first ejector pin 241 or the second ejector pin 242 under the transmission of the gear 243; a first mounting plate 245, wherein the first mounting plate 245 is provided with a plurality of first ejector pins 241; a second mounting plate 246, wherein the second mounting plate 246 is provided with a plurality of second ejector pins 242; and a first elastic member 247, wherein the first elastic member 247 is provided with a plurality of first ejector pins 241 and a plurality of second ejector pins 242. One end is connected to the first mounting plate 245, and the other end is connected to the inner top surface of the spherical shell 210; the second elastic member 248, one end of the second elastic member 248 is connected to the second mounting plate 246, and the other end is connected to the inner bottom surface of the spherical shell 210; when the rack 244 lifts the first mounting plate 245 or the second mounting plate 246, the first elastic member 247 or the second elastic member 248 can both adaptively deform and keep the first mounting plate 245 and the second mounting plate 246 stable after the rack 244 is detached from the first mounting plate 245 or the second mounting plate 246.

[0104] Increasing the number of first ejector pins 241 and second ejector pins 242 is conducive to the two stably holding the wafer. To facilitate the installation of multiple first ejector pins 241, a first mounting plate 245 is provided; to facilitate the installation of multiple second ejector pins 242, a second mounting plate 246 is provided.

[0105] For details, please refer to Figure 2 or Figure 5 In the illustrated embodiment, the first mounting plate 245 is suspended on the inner top surface of the spherical housing 210 through the first elastic member 247, and the second mounting plate 246 is supported by the second elastic member 248 and suspended above the inner bottom surface of the spherical housing 210. The first elastic member 247 and the second elastic member 248 can be made of elastic materials (such as rubber, plastic, etc.), and can also be set in an elastic structure such as a spring or a shrapnel. Since the first elastic member 247 and the second elastic member 248 have elastic properties, when the carrier is on top, the mounting plate corresponding to the carrier can be suspended below it, and the rack 244 can rise to push the mounting plate and the ejector pins thereon to achieve the reception of the wafer; when the carrier is on the bottom, the mounting plate corresponding to the carrier can be kept above it, and if necessary, the rack 244 can descend to push the mounting plate and the ejector pins thereon to facilitate the ejector pins to push the wafer away, so as to facilitate wafer unloading; when the carrier rotates with the spherical shell 210, the elastic member can also drive the mounting plate connected thereto to ensure that the mounting plate can move with the carrier.

[0106] Continue to refer to Figure 2 or Figure 5, the rack 244 is arranged between the first mounting plate 245 and the second mounting plate 246. In order to limit the movement direction of the rack 244 and ensure that the rack 244 can accurately lift the ejector, a vertically extending guide is provided on one side of the rack 244. The guide is fixedly arranged on the first mounting plate 245 or the second mounting plate 246, and the rack 244 is slidably arranged on the guide. The movement direction of the rack 244 is limited by the guide. After the two sets of carriers rotate into place, the rack 24 can only move vertically upward or downward.

[0107] When the rack 244 lifts the mounting plate, the first elastic member 247 or the second elastic member 248 connected to the mounting plate will be compressed and deformed adaptively, and store elastic potential energy. This can not only buffer the impact force during the lifting process and protect the ejector pin and the mounting plate, but also use the stored elastic potential energy to keep the first mounting plate 245 and the second mounting plate 246 stable after the rack 244 is separated from the mounting plate, prevent the mounting plate from shaking due to inertia or other external forces, and ensure the position accuracy of the ejector pin.

[0108] Through meshing transmission, the rotational motion of the gear 243 can be accurately converted into the linear motion of the rack 244, thereby accurately controlling the lifting height of the first ejector pin 241 and the second ejector pin 242. By controlling the rotation angle and speed of the gear 243, the lifting height and speed of the ejector pins can be accurately adjusted to meet the requirements of different processes for wafer access and placement.

[0109] The coordinated transmission of the gear 243 and the rack 244 enables the lifting drive to meet the lifting needs of two sets of mounting plates in a single-drive form, with a simple structure, convenient control and low cost.

[0110] In one embodiment, the lifting driver further includes a rotating driving member (such as a rotating cylinder, a motor, etc.), which is fixedly disposed on one of the first mounting plate 245 and the second mounting plate 246, and is used to drive the gear 243 to rotate. When the gear 243 is engaged with the rack 244, the rotation of the gear 243 can drive the rack 244 to move along the guide member.

[0111] In another embodiment, the flip driver can drive the spherical shell 210 to rotate and the gear 243 to rotate; the flip driver includes a flip motor 261, and a first driving wheel 262 and a second driving wheel 263 are arranged on the output shaft of the flip motor 261 at intervals; the flip mechanism 200 also includes: a rotating joint 251, the spherical shell 210 is rotatably connected to the studio 100 through the rotating joint 251, and the rotating joint is a tubular hollow structure; a rotating shaft 252 is inserted into the rotating joint 251, and the gear 243 is arranged on the rotating shaft 252; a first driven wheel 253 is sleeved on the rotating joint 251 and linked to the first driving wheel 262 through a first belt; a second driven wheel 254 is sleeved on the rotating shaft 252 and linked to the second driving wheel 263 through a second belt; a first tensioning wheel can cooperate with the first driving wheel 262 and the first driven wheel 253 Tension the first belt; the second tensioning wheel can cooperate with the second driving wheel 263 and the second driven wheel 254 to tension the second belt; the first driving member is used to drive the first tensioning wheel close to or away from the first belt to change the tensioning state of the first belt; the second driving member is used to drive the second tensioning wheel close to or away from the second belt to change the tensioning state of the second belt; the second belt is in a slipping state and the first belt is in a tensioned state, the flipping motor 261 drives the first driving wheel 262 to rotate, and the first belt can drive the first driven wheel 253 and the rotating joint 251 to rotate, thereby realizing the rotation of the spherical shell 210; the first belt is in a slipping state and the second belt is in a tensioned state, the flipping motor 261 drives the second driving wheel 263 to rotate, and the second belt can drive the second driven wheel 254 and the rotating shaft 252 to rotate, thereby realizing the rotation of the gear 243.

[0112] For details, please refer to Figure 5 In the illustrated embodiment, the rotary joint 251 is configured in a hollow tube shape and is a key component for the spherical shell 210 to be rotatably connected to the working chamber 100. It not only provides support for the rotation of the spherical shell 210, but also prevents the cables, pipes, etc. passing through it from being affected by the rotation, so that the components in the spherical shell 210 can be stably and safely connected to the outside.

[0113] Continue to refer to Figure 5 The rotating shaft 252 is rotatably disposed in the rotating joint 251 through a bearing, and the gear 243 is mounted on the rotating shaft 252. The rotating shaft 252 can drive the gear 243 to rotate. If necessary, the rotating shaft 252 can also be configured in a hollow tube shape to facilitate the external connection of cables, pipes, etc. in the spherical housing 210.

[0114] Continue to refer to Figure 5The flip motor 261 is arranged outside the studio 100, and the first driving wheel 262 and the second driving wheel 263 are arranged on the output shaft of the flip motor 261 at intervals; the first driving wheel 262 is linked to the first driven wheel 253 through the first belt; the second driving wheel 263 is linked to the second driven wheel 254 through the second belt. The first driven wheel 253 is sleeved on the rotary joint 251, which can drive the rotary joint 251 to rotate, thereby driving the spherical shell 210 to rotate and exchange the positions of the first carrier 220 and the second carrier 230. The second driven wheel 254 is sleeved on the rotating shaft 252, and the left end of the rotating shaft 252 is inserted into the spherical shell 210 through the rotary joint 251 and connected to the gear 243, which can drive the gear 243 to rotate, thereby realizing the lifting of the mounting plate set on it by the rack 244.

[0115] The first tensioning wheel is arranged in the loop of the first belt, and can cooperate with the first driving wheel 262 and the first driven wheel 253 to tension the first belt. The second tensioning wheel is arranged in the loop of the second belt, and can cooperate with the second driving wheel 263 and the second driven wheel 254 to tension the second belt.

[0116] The first driving member and the second driving member can be linear driving components such as cylinders and electric cylinders, which are respectively used to control the first tensioning wheel and the second tensioning wheel to approach or move away from the belt, thereby adjusting the tension state of the belt.

[0117] When the spherical shell 210 needs to rotate, the first driving member drives the first tensioning wheel against the first belt, so that the first belt is in a tensioned state. At the same time, the second driving member drives the second tensioning wheel away from the second belt, so that the second belt is in a slipping state; the flip motor 261 is started, driving the first driving wheel 262 to rotate (the first driving wheel 262 and the second driving wheel 263 are coaxially arranged, and the two will rotate synchronously, but because the second belt is in a slipping state, the rotation of the second driving wheel 263 will not be affected), the first driving wheel 262 drives the first driven wheel 253 to rotate through the tensioned first belt, and then the first driven wheel 253 drives the rotary joint 251 and the spherical shell 210 to rotate, and finally the positions of the first carrier 220 and the second carrier 230 are exchanged.

[0118] After the carrier is in place, the spherical shell 210 needs to be stationary and the gear 243 needs to rotate. The second driving member drives the second tensioning wheel to press against the second belt, so that the second belt is in a tensioned state. At the same time, the first driving member drives the first tensioning wheel away from the first belt, so that the first belt is in a slipping state; the flip motor 261 drives the second driving wheel 263 to rotate, and the second driving wheel 263 drives the second driven wheel 254 to rotate through the tensioned second belt, and then the second driven wheel 254 drives the rotating shaft 252 to rotate, finally realizing the rotation of the gear 243, and utilizing the linkage of the gear 243 and the rack 244 to realize the lifting and lowering of the ejector.

[0119] The traditional driving method requires different independent motors to realize the rotation of the spherical shell 210 and the gear 243 respectively, which requires a large space, a complex structure and high cost. The present application realizes the driving of two key components through a flip motor 261 and a clever transmission structure, simplifies the device structure, reduces the number of motors and the wiring and installation space inside the device, makes the device more compact, and is conducive to reducing production costs.

[0120] Optionally, the lifting mechanism further includes a position avoidance driving member 249, which is used to drive the rack 244 to approach or move away from the gear 243; when the spherical shell 210 rotates, the rack 244 moves away from the gear 243, thereby preventing the gear 243 and the rack 244 from damaging each other.

[0121] For details, please refer to Figure 2 In the illustrated embodiment, the avoidance driving member 249 can be a linear driving member such as a cylinder or an electric cylinder. The avoidance driving member 249 is fixedly arranged on the first mounting plate 245 or the second mounting plate 246 and is located on one side of the gear 243. The avoidance driving member 249 is connected to the rack 244 through a guide member, which can drive the rack 244 to approach or move away from the gear 243 without affecting the lifting movement of the rack 244.

[0122] Before the spherical housing 210 rotates, the avoidance driving member 249 drives the rack 244 away from the gear 243 so that the two are out of meshing state, thereby preventing the rack 244 from being displaced and damaging the gear 243.

[0123] When the lifting mechanism also has the avoidance driving member 249, the above-mentioned flipping driver can drive the spherical shell 210 to rotate and the gear 243 to rotate, and the second driving member can be omitted. At this time, the second belt is always in a tensioned state. The avoidance driving member 249 can be used to select whether to use the rotating gear 243 to brake the rack 244 as needed, without worrying about the rotation of the spherical shell 210 and the rotation of the gear 243 interfering with each other.

[0124] Optionally, the first carrier 220 and the second carrier 230 both include: a receiving table 221 for receiving wafers; an annular pressure ring 222, which can press against the edge of the wafer from top to bottom to fix the wafer on the receiving table 221; wherein the annular pressure ring 222 is linked with the first ejector pin 241 or the second ejector pin 242, and can rise and fall with the first ejector pin 241 or the second ejector pin 242; when the annular pressure ring 222 rises, the wafer to be etched can enter between the receiving table 221 and the annular pressure ring 222 and be received by the first ejector pin 241 or the second ejector pin 242; after the annular pressure ring 222 descends, it can press the wafer against the receiving table 221, and expose the surface of the wafer to the inner ring of the annular pressure ring 222, so that the surface of the wafer can be etched and de-glued.

[0125] For details, please refer to Figure 3 In the illustrated embodiment, the receiving table 221 is substantially in the shape of a flat cylinder, and a raised truncated table is provided at the center of the receiving table 221 for receiving the wafer. A temperature control flow channel 223 is provided in the receiving table 221 .

[0126] Continue to refer to Figure 3 The annular pressure ring 222 is roughly in the shape of a circular ring, and a circle of pressure blocks protruding toward the receiving table 221 is provided on the upper part of the inner ring of the circular ring; when the annular pressure ring 222 fixes the wafer, its main body will fall outside the central truncated cone of the receiving table 221 and be supported by the edge table of the receiving table 221, and the inner ring pressure blocks can generally rest against the edge of the wafer.

[0127] Taking the first carrier 220 as an example, a connecting rod is also provided on the first mounting plate 245 corresponding to the first carrier 220, and the connecting rod can pass through the material receiving table 221 to contact the annular pressure ring 222. When the lifting driver drives the first mounting plate 245 to lift the first ejector pin 241, the connecting rod rises together with the first ejector pin 241, and the connecting rod can lift the annular pressure ring 222 and make the annular pressure ring 222 away from the material receiving table 221. It should be noted that after the annular pressure ring 222 is lifted, it will be higher than the first ejector pin 241, so that the wafer loading equipment can pass the wafer to be processed between the annular pressure ring 222 and the first ejector pin 241, and then the first ejector pin 241 can take away the wafer through the lifting movement. After the wafer loading equipment is withdrawn, the lifting driver drives the first mounting plate 245 to lower with the first ejector pin 241 and the connecting rod. The first ejector pin 241 is at a low height and will first drop the wafer on the receiving table 221. The first mounting plate 245 continues to lower, and the annular pressure ring 222 can support the wafer. At the same time, the wafer surface will be exposed in the inner ring of the annular pressure ring 222, and the annular pressure ring 222 will not interfere with the normal operation of etching and degumming.

[0128] The annular pressure ring 222 presses the wafer against the receiving table 221. The dual effects of pressure and the adsorption force of the electrostatic chuck enable the wafer to be firmly placed on the carrier, improving the position stability of the wafer, and reducing the etching and degumming deviation caused by wafer displacement, thereby improving the accuracy of etching and degumming, and improving the quality and yield of the product. During the wafer loading and unloading process, the coordinated action of the annular pressure ring and the ejector pin can also reduce the risk of wafer damage and save production costs.

[0129] It is necessary to add that: It can be seen from the above that the functional parts such as the electrostatic suction cup and the avoidance drive 249 arranged in the spherical shell 210 that need an external power supply can pass the cables used for connecting to the power supply through the hollow tubular rotating joint 251 to achieve external connection.

[0130] It can be seen from the above that the cooling and heating pipes that need to be connected to the temperature control channel 223 can also be passed through and externally connected by setting a hollow tube-shaped rotating joint 251; further, the cooling and heating pipes are relatively fixedly connected to the rotating joint 251, or the rotating joint 251 is reversed, and the pipes inside the hollow tube and connected to the outside will not be disturbed by the rotation, and the temperature control agent in the tube can always flow normally.

[0131] When the cooling and heating pipes that the temperature control channel 223 needs to connect are disconnection-reconnection type magnetic suction structures, there is a more detailed external description above, which will not be repeated here.

[0132] In other words, the design of the flip mechanism 200 does not require any concerns about the external connection of the internal cables and pipes.

[0133] (III) The photoresist stripping chamber 120 uses plasma (RPS mechanism, using O2 and N2 as reaction gases) to decompose the photoresist (mainly hydrocarbons). The pollutants generated by the photoresist stripping include volatile gases CO2, CO, H2O, N2O (by-products of the reaction between oxygen and nitrogen), and a small amount of incompletely decomposed carbon particles that may exist.

[0134] The dry pump (second vacuum pumping device 420) can pump nitrogen, oxygen and volatile pollutants (such as CO2) at a speed of several hundred m³ / h, ensuring that the degassing pollutants stay in the chamber for a very short time (milliseconds).

[0135] Therefore, after debonding, the electrostatic chuck and part of the spherical shell 210 in the debonding chamber 120 will hardly be contaminated, and even if there are contaminants remaining on their surfaces, these contaminants will not react with the etching gas or the wafer surface material.

[0136] (IV) Pollutants generated by etching include: 1. Metal oxides: Metal elements (Al, Cu, Ti, etc.) react with residual oxygen at high temperatures to form Al2O3, CuO, TiO2, etc.; 2. Carbide / nitride: The carbon-hydrogen radicals in the plasma react with silicon to form SiC, and the nitrogen radicals react with metal to form TiN; 3. Carbon deposition: The carbon particles produced by the decomposition of the photoresist are not completely vaporized and are deposited as an amorphous carbon film; These pollutants often have high melting points (Al2O3 melting point 2072℃, SiC melting point 2700℃), stable chemical properties; and the particle size is mostly submicron (0.1~10μm) with high density (such as Al2O3 density 3.97g / cm³).

[0137] Therefore, on the one hand, in the etching chamber 101, the dry pump (the first vacuum pumping device 410) can effectively clean it, and on the other hand, these pollutants will not react with the stripping gas (O2, N2) and are non-volatile.

[0138] In other words, stripping and etching will hardly affect each other.

[0139] Therefore, the stripping and etching can be integrated in one chamber to achieve dual purposes.

[0140] The first vacuum pumping device 410 and the second vacuum pumping device 420 are disposed adjacent to the spherical shell 210 . During the process, most of the by-products can be directly pumped away by the dry pump and are hardly deposited on the electrostatic chuck or the spherical shell 210 .

[0141] In the studio 100, after the etching and / or descaling process is carried out for 100 to 150 hours, a comprehensive cleaning of the cavity will be performed (open cavity cleaning or introduction of clean gas) to further prevent the residual pollutants from affecting the gas environment required for the process.

[0142] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. An integrated etching and degumming chamber, characterized in that: include: A workroom (100) for providing a space for wafer processing; The flip mechanism (200) is rotatably suspended in the working room (100), and divides the inner cavity of the working room (100) into an etching cavity (101) and a degumming cavity (102): An etching mechanism (310) used to implement etching of the wafer in the etching chamber (101); A debonding mechanism (320) for debonding the wafer in the debonding chamber (102); Wherein, the flipping mechanism (200) comprises: A spherical shell (210), wherein the top surface and the bottom surface of the spherical shell (210) are arranged to be planes, and the peripheral surface connecting the top surface and the bottom surface is arranged to be a spherical surface; A first carrier (220) is disposed on the top surface; a second carrier (230) disposed on the bottom surface; the first carrier (220) and the second carrier (230) are symmetrically arranged; when one of the first carrier (220) and the second carrier (230) is in the etching chamber (101), the other is in the degumming chamber (102); and both the first carrier (220) and the second carrier (230) use electrostatic chucks; A flip driver, used for driving the spherical shell (210) to rotate, so as to exchange the positions of the first carrier (220) and the second carrier (230); A lifting mechanism is arranged in the spherical shell (210), and the lifting mechanism comprises: A first ejector pin (241), wherein the first carrier (220) is provided with a first through hole, and the first ejector pin (241) is capable of passing through the first through hole; A second ejector pin (242), wherein the second carrier (230) is provided with a second through hole, and the second ejector pin (242) is capable of passing through the second through hole; A lifting driver, used for driving the first ejector pin (241) to move closer to or farther from the first through hole, and the second ejector pin (242) to move closer to or farther from the second through hole; When the first carrier (220) is located in the etching chamber (101), the lifting driver drives the first ejector pin (241) to rise, and the first ejector pin (241) is able to pass through the first through hole and receive the wafer; After obtaining the wafer, the lifting driver drives the first ejector pin (241) to descend so that the wafer falls onto the first carrier (220), and the first carrier (220) can fix the wafer by electrostatic adsorption; After etching of the wafer is completed, the flip driver drives the spherical shell (210) to rotate, so that the first carrier (220) carries the wafer into the degumming chamber (102), and the second carrier (230) enters the etching chamber (101); The lifting driver drives the second ejector pin (242) to rise, and the second ejector pin (242) can pass through the second through hole and receive the wafer; At the same time, the wafer on the first carrier (220) can undergo a debonding process in the debonding chamber (102).

2. The integrated etching and degumming chamber according to claim 1, characterized in that: It also includes a sealing mechanism, which is arranged between the spherical shell (210) and the working chamber (100) and is used to prevent the gases in the etching chamber (101) and the degumming chamber (102) from communicating with each other; The inner wall of the working chamber (100) is provided with a circle of annular grooves; The sealing mechanism comprises: A magnetic fluid (110) is filled in the annular groove, and the magnetic fluid (110) can form a sealing liquid film under the action of a magnetic field; An elastic sealing lip (120) is arranged in an annular manner on the circumferential surface of the spherical shell (210); In a normal working state, the spherical shell (210) is stationary, the elastic sealing lip (120) is in close contact with the sealing liquid film, and the magnetic fluid (110) and the elastic sealing lip (120) work together to achieve sealing between the spherical shell (210) and the working chamber (100).

3. The integrated etching and degumming chamber according to claim 1, characterized in that: The working room (100) is provided with a first film inlet at the top and a second film inlet at the bottom, the first film inlet is connected to the etching chamber (101), and the second film inlet is connected to the debonding chamber (102); The wafer to be etched can enter the working chamber (100) through the first wafer entry port; The wafer that has completed etching and de-bonding can leave the working room (100) through the second wafer entry port.

4. The integrated etching and degumming chamber according to claim 1, characterized in that: A first gas inlet and a first gas outlet are provided at the upper portion of the working chamber (100); etching reaction gas can enter the etching chamber (101) through the first gas inlet and can be discharged from the etching chamber (101) through the first gas outlet; A second air inlet and a second air outlet are provided at the lower part of the working chamber (100); the debonding reaction gas can enter the debonding chamber (102) through the second air inlet and can be discharged from the debonding chamber (102) through the second air outlet; The first air outlet and the second air outlet are adjacent to the connection position between the spherical shell (210) and the working chamber (100).

5. The integrated etching and degumming chamber according to claim 1, characterized in that: It also includes a temperature control mechanism, wherein the temperature control mechanism is used to adjust the temperature of the first carrier (220) and the second carrier (230); The temperature control mechanism is capable of cooling down the first carrier (220) or the second carrier (230) in the etching chamber (101), and is capable of heating up the second carrier (230) or the first carrier (220) in the degumming chamber (102).

6. The integrated etching and degumming chamber according to claim 5, characterized in that: The first carrier (220) and the second carrier (230) are both provided with temperature-controlled flow channels (223); The temperature control mechanism includes a heating pipe and a cooling pipe; When the first carrier (220) or the second carrier (230) is in the etching chamber (101), the cooling pipe is connected to the temperature control channel (223), and the coolant can enter the temperature control channel (223) through the cooling pipe to reduce the temperature of the first carrier (220) or the second carrier (230); When the first carrier (220) or the second carrier (230) is in the degumming chamber (102), the heat supply pipe is connected to the temperature control channel (223), and the heating agent can enter the temperature control channel (223) through the heat supply pipe, thereby increasing the temperature of the first carrier (220) or the second carrier (230).

7. The integrated etching and degumming chamber according to claim 1, characterized in that: The lifting drive comprises: a gear (243) and a rack (244), wherein the rack (244) is disposed between the first ejector pin (241) and the second ejector pin (242); when the gear (243) is meshed with the rack (244), the gear (243) rotates, and the rack (244) can lift the first ejector pin (241) or the second ejector pin (242) under the transmission of the gear (243); A first mounting plate (245), wherein a plurality of first ejector pins (241) are provided on the first mounting plate (245); A second mounting plate (246), wherein a plurality of second ejector pins (242) are provided on the second mounting plate (246); a first elastic member (247), one end of the first elastic member (247) being connected to the first mounting plate (245) and the other end of the first elastic member (247) being connected to the inner top surface of the spherical shell (210); a second elastic member (248), wherein one end of the second elastic member (248) is connected to the second mounting plate (246) and the other end is connected to the inner bottom surface of the spherical shell (210); When the rack (244) lifts the first mounting plate (245) or the second mounting plate (246), the first elastic member (247) or the second elastic member (248) can both adaptively deform and keep the first mounting plate (245) and the second mounting plate (246) stable after the rack (244) is detached from the first mounting plate (245) or the second mounting plate (246).

8. The integrated etching and degumming chamber according to claim 7, characterized in that: The flip driver can drive the spherical shell (210) to rotate, and can also drive the gear (243) to rotate; The flip driver comprises a flip motor (261), and a first driving wheel (262) and a second driving wheel (263) are arranged on the output shaft of the flip motor (261) at intervals; The turning mechanism (200) further comprises: A rotating joint (251), wherein the spherical shell (210) is rotationally connected to the working chamber (100) via the rotating joint (251), and the rotating joint (251) is a tubular hollow structure; A rotating shaft (252) is inserted into the rotating joint (251), and the gear (243) is arranged on the rotating shaft (252); A first driven wheel (253) is sleeved on the rotary joint (251) and is linked to the first driving wheel (262) via a first belt; A second driven wheel (254) is sleeved on the rotating shaft (252) and is linked to the second driving wheel (263) via a second belt; A first tensioning wheel capable of cooperating with the first driving wheel (262) and the first driven wheel (253) to tension the first belt; A second tensioning wheel capable of cooperating with the second driving wheel (263) and the second driven wheel (254) to tension the second belt; A first driving member, used for driving the first tensioning wheel to move closer to or away from the first belt, so as to change the tensioning state of the first belt; A second driving member, used for driving the second tensioning wheel to move closer to or away from the second belt, so as to change the tensioning state of the second belt; The second belt is in a slipping state and the first belt is in a tensioned state, the flip motor (261) drives the first driving wheel (262) to rotate, and the first belt can drive the first driven wheel (253) and the rotary joint (251) to rotate, thereby realizing the rotation of the spherical shell (210); The first belt is in a slipping state, the second belt is in a tensioned state, the flip motor (261) drives the second driving wheel (263) to rotate, and the second belt can drive the second driven wheel (254) and the rotating shaft (252) to rotate, thereby realizing the rotation of the gear (243).

9. The integrated etching and degumming chamber according to claim 8, characterized in that: The lifting mechanism further comprises a position-avoiding driving member (249), wherein the position-avoiding driving member (249) is used to drive the rack (244) to approach or move away from the gear (243); When the spherical housing (210) rotates, the rack (244) moves away from the gear (243), thereby preventing the gear (243) and the rack (244) from damaging each other.

10. The integrated etching and degumming chamber according to claim 1, characterized in that: The first carrier (220) and the second carrier (230) both include: A receiving table (221) for receiving wafers; An annular pressure ring (222) capable of pressing against the edge of the wafer from top to bottom to fix the wafer on the receiving table (221); The annular pressure ring (222) is linked with the first ejector pin (241) or the second ejector pin (242) and can be raised and lowered along with the first ejector pin (241) or the second ejector pin (242); When the annular pressure ring (222) rises, the wafer to be etched can enter between the receiving table (221) and the annular pressure ring (222) and be received by the first ejector pin (241) or the second ejector pin (242); After the annular pressure ring (222) descends, it can press the wafer against the material receiving table (221) and expose the surface of the wafer in the inner ring of the annular pressure ring (222), so that the surface of the wafer can be etched and debonded.

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