Optical amplification integrated chip for pumping coupling at any position

Abstract

The invention relates to an optical amplification integrated chip for pumping coupling at any position. The optical amplification integrated chip comprises an end face coupling input waveguide structure; the mode multiplexing structure is used for converting the fundamental mode pump light into first-order mode pump light and combining the fundamental mode signal light and the first-order mode pump light; the gain amplification waveguide structure is used for amplifying the fundamental mode signal light; the at least one pump light coupling structure is used for coupling and introducing fundamental mode pump light into any position of the gain amplification waveguide structure; the mode demultiplexing structure is used for demultiplexing the first-order mode pump light and the amplified fundamental mode signal light; and the end face coupling output structure is used for coupling output of the fundamental mode pump light and the amplified fundamental mode signal light. The mode multiplexing structure on the optical amplification integrated chip is used for carrying out cross-band beam combination, the problem of low coupling efficiency is solved, and the flexibility of pumping coupling at any position is realized.

Description

Technical Field

[0001] The present application relates to the field of silicon photonic integrated devices and optical waveguide amplification, and in particular to an optical amplification integrated chip with arbitrary position pump coupling. Background Art

[0002] Optical amplifier integrated chips play an indispensable role in the detection of tiny signals in communication systems and sensing fields. Optical amplifier integrated chips have a wide range of applications, especially in communication systems and sensing fields, where their role is particularly significant. In the field of communications, optical amplifier integrated chips convert optical signals into electrical signals through photoelectric conversion to achieve high-speed, large-capacity data transmission. This conversion process is crucial to ensure stable signal transmission, especially in optical fiber communications, by enhancing the intensity of optical signals to ensure signal transmission quality and distance. In addition, optical amplifier integrated chips can also analyze and process optical signals of different wavelengths, which is crucial for realizing the transmission and processing of multi-wavelength optical signals.

[0003] In the related technology, the wavelength division multiplexing structure on the optical amplifier integrated chip is used for cross-band beam combining, but its coupling efficiency is low. Therefore, efficient cross-band on-chip coupling is a difficult problem that needs to be solved urgently. Summary of the invention

[0004] The present application provides an optical amplifier integrated chip with arbitrary position pump coupling, which utilizes the mode multiplexing structure on the optical amplifier integrated chip to perform cross-band beam combining, thereby solving the technical problem of low coupling efficiency and achieving the flexibility of arbitrary position pump coupling.

[0005] The embodiment of the present application provides an optical amplification integrated chip with arbitrary position pump coupling, which includes:

[0006] An end-face coupled input waveguide structure, which is used for coupling input of fundamental mode signal light and fundamental mode pump light;

[0007] A mode multiplexing structure, which is used to convert the fundamental mode pump light into the first-order mode pump light, and combine the fundamental mode signal light and the first-order mode pump light;

[0008] A gain amplification waveguide structure, which is used to amplify fundamental mode signal light;

[0009] at least one coupled pump light structure, which is used to couple the fundamental mode pump light into any position of the gain amplification waveguide structure;

[0010] A mode demultiplexing structure, which is used to demultiplex the first-order mode pump light and the amplified fundamental mode signal light;

[0011] An end-face coupling output structure, which is used for coupling output of fundamental mode pump light and amplified fundamental mode signal light;

[0012] The end-face coupled input waveguide structure, the mode multiplexing structure, the gain amplifying waveguide structure, the mode demultiplexing structure and the end-face coupled output structure are connected in sequence, and the coupled pump light structure is arranged in the transmission path of the gain amplifying waveguide structure.

[0013] In one embodiment, the mode multiplexing structure includes:

[0014] A first input waveguide, which is used for inputting fundamental mode pump light;

[0015] A second input waveguide, which is used for inputting fundamental mode signal light;

[0016] A first coupling waveguide and a second coupling waveguide, which are used to convert input fundamental mode pump light into first-order mode pump light;

[0017] An output waveguide, which is used for outputting fundamental mode signal light and first-order mode pump light;

[0018] The first input waveguide is connected to the first coupling waveguide, the second input waveguide, the second coupling waveguide and the output waveguide are connected in sequence, and the first coupling waveguide is arranged in parallel to the second coupling waveguide.

[0019] In one embodiment, the mode multiplexing structure includes:

[0020] Substrate layer one;

[0021] an oxide layer 1, which covers the top surface of the substrate layer 1;

[0022] A ridge-type transmission layer 1, which covers the top surface of the ridge-type transmission layer 1;

[0023] The waveguide cladding layer 1 covers the top surface of the ridge type transmission layer 1.

[0024] In one embodiment, the material of the substrate layer 1 includes silicon, the material of the ridge transmission layer 1 includes silicon nitride, and the materials of the oxide layer 1 and the waveguide cladding layer 1 include silicon dioxide.

[0025] In one embodiment, the gain amplification waveguide structure comprises:

[0026] Substrate layer 2;

[0027] A second oxide layer covering the top surface of the second substrate layer;

[0028] A ridge waveguide gain layer, which covers the top surface of the second oxide layer;

[0029] The second waveguide cladding layer covers the top surface of the ridge waveguide gain layer.

[0030] In one embodiment, the material of the second substrate layer includes silicon, the material of the ridge waveguide gain layer includes erbium-doped silicon nitride, and the material of the second oxide layer and the second waveguide cladding layer includes silicon dioxide.

[0031] In one embodiment, the end-face coupling input waveguide structure and the end-face coupling output structure include a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, or an array coupling structure.

[0032] In one embodiment, the waveguide upper cladding material of the end-face coupled input waveguide structure, the mode multiplexing structure, the gain amplification waveguide structure, the mode demultiplexing structure and the end-face coupled output structure comprises silicon dioxide or polymethyl methacrylate.

[0033] In one embodiment, the gain waveguide of the gain amplification waveguide structure includes an Euler-bent straight waveguide or a spiral structure.

[0034] In one embodiment, the mode multiplexing structure and the mode demultiplexing structure include an asymmetric directional coupler or a symmetric directional coupler structure.

[0035] The beneficial effects brought by the technical solution provided in the embodiments of the present application include:

[0036] The mode multiplexing structure is used to achieve efficient coupling between pump light and signal light. The phase mismatch between the fundamental mode of the signal light and other modes can prevent the signal light from leaking into the upper coupling waveguide of the mode multiplexing structure, thereby achieving low loss and low crosstalk coupling of the fundamental mode signal light, and thus achieving efficient transmission. At least one coupled pump light structure can be placed at any position of the gain amplification waveguide structure for pump light coupling to achieve transmission and amplification of light energy. It has the characteristics of convenience, good performance, and compactness. Among them, the gain amplification waveguide structure can compensate for the loss in the optical fiber transmission process, and the gain amplification waveguide structure is used to form a population inversion under the action of the pump light, thereby providing optical gain to the incident light signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0038] Figure 1 A schematic diagram of the structure of an optical amplification integrated chip with arbitrary position pump coupling provided in an embodiment of the present application;

[0039] Figure 2Schematic diagram of distribution of mode fields of pump light and signal light in different modes in a waveguide provided in an embodiment of the present application;

[0040] Figure 3 A side cross-sectional schematic diagram of a mode multiplexing waveguide structure provided in an embodiment of the present application.

[0041] Figure 4 A schematic top view of a mode multiplexing waveguide structure provided in an embodiment of the present application;

[0042] Figure 5 A side cross-sectional schematic diagram of an enlarged structure provided in an embodiment of the present application.

[0043] In the figure: 1. end-face coupled input waveguide structure; 2. mode multiplexing structure; 201. substrate layer one; 202. oxide layer one; 203. ridge transmission layer one; 204. waveguide cladding one; 205. first input waveguide; 206. second input waveguide; 207. first coupling waveguide; 208. second coupling waveguide; 209. output waveguide; 3. gain amplification waveguide structure; 301. substrate layer two; 302. oxide layer two; 303. ridge waveguide gain layer; 304. waveguide cladding two; 4. coupled pump light structure; 5. mode demultiplexing structure; 6. end-face coupled output structure. DETAILED DESCRIPTION

[0044] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] The embodiment of the present application provides an optical amplifier integrated chip with arbitrary position pump coupling, which uses the mode multiplexing structure on the optical amplifier integrated chip to perform cross-band beam combining, thereby solving the technical problem of low coupling efficiency and achieving the flexibility of arbitrary position pump coupling.

[0046] like Figure 1As shown, the embodiment of the present application provides an optical amplifier integrated chip with arbitrary position pump coupling, which includes: an end-face coupled input waveguide structure 1, which is used for coupling input of fundamental mode signal light and fundamental mode pump light; a mode multiplexing structure 2, which is used to convert the fundamental mode pump light into a first-order mode pump light, and combine the fundamental mode signal light and the first-order mode pump light; a gain amplification waveguide structure 3, which is used to amplify the fundamental mode signal light; at least one coupled pump light structure 4, which is used to couple the fundamental mode pump light into the gain amplification waveguide structure 3; a mode demultiplexing structure 5, which is used to demultiplex the first-order mode pump light and the amplified fundamental mode signal light; an end-face coupled output structure 6, which is used for coupling output of the amplified fundamental mode signal light; the end-face coupled input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupled output structure 6 are connected in sequence, and the coupled pump light structure 4 is arranged in the transmission path of the gain amplification waveguide structure 3.

[0047] For example, refer to Figure 1 Three coupled pump light structures 4 are arranged in sequence and at intervals on the transmission path of the gain amplification waveguide structure 3. Their function is to couple the light emitted by the high-power fundamental mode pump laser into the chip to improve the pumping efficiency and the gain performance of the optical amplifier integrated chip.

[0048] The optical amplifier integrated chip integrates an end-face coupled input waveguide structure 1, a mode multiplexing structure 2, a gain amplification waveguide structure 3, at least one coupled pump light structure 4, a mode demultiplexing structure 5 and an end-face coupled output structure 6.

[0049] Reference Figure 2 As can be seen from the figure, in this embodiment, 1530nm signal light and 980nm pump light are used to realize fiber-chip coupling by end-face coupling input waveguide structure 1 through two-channel optical fiber array. Then, the pump light realizes mode conversion through mode multiplexing structure 2 and combines with the signal light, and inputs into the gain amplification waveguide structure 3 together. At any position of the gain amplification waveguide structure 3, three coupling pump light structures 4 are used to efficiently introduce the fundamental mode pump light into the gain amplification waveguide structure 3. The amplified fundamental mode signal light and the first-order mode pump light are separated from the amplified fundamental mode signal light through the mode demultiplexing structure 5, and the fundamental mode pump light and the amplified fundamental mode signal light are coupled and output respectively through the end-face coupling output structure 6.

[0050] Among them, refer to the attached Figure 2 , Figure 2The mode field distribution diagram of the pump light and signal light provided in this embodiment in different modes in the waveguide includes the TE0 fundamental mode of the 980nm pump light, the TE1 first-order mode of the 980nm pump light, and the TE0 fundamental mode of the 1550nm signal light. The mode multiplexing structure 2 is used to perform mode conversion on the TE0 fundamental mode pump light to obtain the TE1 mode high-order mode pump light. The TE0 mode is the fundamental mode of the transverse electric field, and the TE1 mode is the first-order mode of the transverse electric field.

[0051] Specifically, the mode multiplexing structure 2 is used to achieve efficient coupling between the pump light and the signal light. The phase mismatch between the fundamental mode of the signal light and other modes can prevent the signal light from leaking into the upper coupling waveguide of the mode multiplexing structure 2, thereby achieving low loss and low crosstalk coupling of the fundamental mode signal light, and thus achieving efficient transmission. At least one coupled pump light structure 4 can be placed at any position of the gain amplification waveguide structure 3 to perform pump light coupling to achieve transmission and amplification of light energy. It has the characteristics of convenience, good performance, and compactness. Among them, the gain amplification waveguide structure 3 can compensate for the loss in the optical fiber transmission process, and the gain amplification waveguide structure 3 is used to form a population inversion under the action of the pump light, thereby providing optical gain to the incident light signal.

[0052] Combined with the first aspect, Figure 4 As shown, in one embodiment, the mode multiplexing structure 2 includes: a first input waveguide 205, which is used for fundamental mode pump light input; a second input waveguide 206, which is used for fundamental mode signal light input; a first coupling waveguide 207 and a second coupling waveguide 208, which are used to convert the input fundamental mode pump light into first-order mode pump light; an output waveguide 209, which is used for fundamental mode signal light and first-order mode pump light output; the first input waveguide 205 is connected to the first coupling waveguide 207, the second input waveguide 206, the second coupling waveguide 208 and the output waveguide 209 are connected in sequence, and the first coupling waveguide 207 is arranged in parallel with the second coupling waveguide 208.

[0053] Exemplarily, the mode multiplexing structure 2 includes a first input waveguide 205, a second input waveguide 206, a first coupling waveguide 207, a second coupling waveguide 208 and an output waveguide 209. The TE0 fundamental mode pump light with a wavelength of 980 nm sequentially passes through the coupling input waveguide structure of the end face coupling input waveguide structure 1 and the first input waveguide 205 of the mode multiplexing structure 2. At the first coupling waveguide 207, since the phase matching condition is met, the TE0 fundamental mode of the pump light in the first coupling waveguide 207 is mode-converted in the second coupling waveguide 208, converted into the TE1 first-order mode and output to the output waveguide 209. The TE0 fundamental mode signal light with a wavelength of 1530nm passes through the coupling input waveguide structure of the end face coupling input waveguide structure 1, the second input waveguide 206 of the mode multiplexing structure 2, and when passing through the second coupling waveguide 208 in the coupling region, since there is a large phase mismatch between the fundamental mode of the signal light in the first coupling waveguide 207 (that is, the lower waveguide in the coupling region) and the other modes in the second coupling waveguide 208 (that is, the upper waveguide in the coupling region), no coupling will occur between them, and the fundamental mode is kept unchanged and transmitted along the transmission direction of the light beam, and the 1530nm TE0 fundamental mode signal light and the 980nm TE1 first-order mode pump light are obtained at the output waveguide 209 of the mode multiplexing structure 2.

[0054] Among them, by using the coupled mode principle, efficient coupling between the pump light and the signal light is achieved through the mode multiplexing structure 2. The phase mismatch between the fundamental mode of the signal light and other modes can prevent the signal light from leaking into the first coupling waveguide 207, thereby isolating the signal light from the first coupling waveguide 207. Furthermore, the mode division multiplexing pumping method can introduce the pump light into the gain amplification waveguide structure 3 at any position of the chip, solving the limitation of low pumping efficiency.

[0055] In one embodiment, Figure 3 As shown, the mode multiplexing structure 2 includes: a substrate layer 201; an oxide layer 202, which covers the top surface of the substrate layer 201; a ridge transmission layer 203, which covers the top surface of the ridge transmission layer 203; and a waveguide cladding layer 204, which covers the top surface of the ridge transmission layer 203.

[0056] For example, Figure 3 It is a cross-sectional schematic diagram of the mode multiplexing structure 2, which mainly includes a substrate layer 201, an oxide layer 202, a ridge transmission layer 203 and a waveguide cladding 204 covering the ridge transmission layer 203; wherein, the oxide layer 202 covers the substrate layer 201; the ridge transmission layer 203 is located on the oxide layer 202; and the waveguide cladding 204 covers the ridge transmission layer 203.

[0057] In one embodiment, the material of the substrate layer 201 includes silicon, the material of the ridge transmission layer 203 includes silicon nitride, and the material of the oxide layer 202 and the waveguide cladding layer 204 includes silicon dioxide.

[0058] For example, the substrate layer 201 may be made of silicon material, the oxide layer 202 may be made of silicon dioxide material, the ridge transmission layer 203 may be made of silicon nitride material, and the waveguide cladding layer 204 may be made of silicon dioxide material.

[0059] Specifically, the waveguide of the mode multiplexing structure 2 is arranged on the top surface of the ridge transmission layer 1 203. Specifically, the first input waveguide 205, the second input waveguide 206, the first coupling waveguide 207, the second coupling waveguide 208 and the output waveguide 209 are all located on the top surface of the ridge transmission layer 1 203, which is covered on the oxide layer 1 202, and the oxide layer 1 202 is covered on the top surface of the substrate layer 1 201. Finally, the waveguide cladding layer 1 204 covers the ridge transmission layer 1 203 and the waveguide structure thereon, forming a complete waveguide arrangement.

[0060] In one embodiment, Figure 3 As shown, the gain amplification waveguide structure 3 includes: a substrate layer 301; an oxide layer 302 covering the top surface of the substrate layer 301; a ridge waveguide gain layer 303 covering the top surface of the oxide layer 302; and a waveguide cladding layer 304 covering the top surface of the ridge waveguide gain layer 303.

[0061] In one embodiment, the material of the second substrate layer 301 includes silicon, the material of the ridge waveguide gain layer 303 includes erbium-doped silicon nitride, and the material of the second oxide layer 302 and the second waveguide cladding layer 304 includes silicon dioxide.

[0062] Exemplarily, the gain amplification waveguide structure 3 includes a substrate layer 301, a low-refractive index oxide layer 302, a ridge waveguide gain layer 303, and a waveguide cladding layer 304 covering the ridge waveguide gain layer 303. In the embodiment, the substrate layer 301 can be made of silicon material, the low-refractive index oxide layer 302 can be made of silicon dioxide material, the ridge waveguide gain layer 303 can be made of erbium-doped silicon nitride waveguide, and the waveguide cladding layer 304 can be made of silicon dioxide material.

[0063] Specifically, the waveguide of the gain amplification waveguide structure 3 is located on the top surface of the ridge waveguide gain layer 303, which is covered on the second oxide layer 302, and the second oxide layer 302 is covered on the top surface of the second substrate layer 301. Finally, the second waveguide cladding layer 304 covers the ridge waveguide gain layer 303 and the waveguide structure thereon, forming a complete waveguide setting.

[0064] Furthermore, the substrate layer 2 301 of the gain amplifying waveguide structure 3 and the substrate layer 1 201 of the mode multiplexing structure 2 are located on the same layer, the oxide layer 2 302 of the gain amplifying waveguide structure 3 and the oxide layer 1 202 of the mode multiplexing structure 2 are located on the same layer, and so on, completing the one-to-one correspondence between the stratification of the gain amplifying waveguide structure 3 and the stratification of the mode multiplexing structure 2.

[0065] In one embodiment, the end-face coupling input waveguide structure 1 and the end-face coupling output structure 6 include a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, or an array coupling structure.

[0066] Exemplarily, the end-face coupled input waveguide structure 1 and the end-face coupled output structure 6 can select one of a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, and an array coupling structure, for coupling the off-chip optical fiber with the on-chip waveguide fiber-chip.

[0067] In one embodiment, the waveguide upper cladding material of the end-face coupling input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupling output structure 6 includes silicon dioxide or polymethyl methacrylate.

[0068] Exemplarily, the waveguide upper cladding material (the waveguide upper cladding material refers to the material layer located above the waveguide core layer in the waveguide structure) of the end-face coupled input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupled output structure 6 includes one or more of silicon dioxide and polymethyl methacrylate (PMMA).

[0069] In one embodiment, the material of the waveguide cladding layer 2 304 of the gain amplification waveguide structure 3 includes silicon dioxide.

[0070] In one embodiment, the rare earth element in the ridge waveguide gain layer 303 (ie, the rare earth doped gain layer) of the gain amplification waveguide structure 3 may include one or more of erbium, ytterbium, and thulium to obtain gain, so as to provide the required amplification function.

[0071] In one embodiment, the gain waveguide of the gain amplification waveguide structure 3 includes an Euler-bent straight waveguide or a spiral structure.

[0072] Exemplarily, the gain waveguide of the gain amplification waveguide structure 3 may be a straight waveguide or a spiral structure with Euler bending to achieve low loss and compact structure.

[0073] In one embodiment, the mode multiplexing structure 2 and the mode demultiplexing structure 5 include an asymmetric directional coupler or a symmetric directional coupler structure. The mode multiplexing structure 2 and the mode demultiplexing structure 5 have the same structure and size, and their input and output ends are oppositely arranged.

[0074] Furthermore, the waveguide structures of the mode multiplexing structure 2 and the mode demultiplexing structure 5 need to satisfy the phase matching condition, which is:

[0075]

[0076] Among them, W i and W j They respectively refer to the width of the waveguide in the coupling region (the second coupling waveguide 208) and the waveguide in the coupling region (the first coupling waveguide 207) of the mode multiplexing structure 2, and They refer to the effective refractive indices of the TE0 fundamental mode and TE1 higher-order mode of the pump light in the upper waveguide and lower waveguide of the coupling region, respectively.

[0077] In the description of the present application, it should be noted that the terms "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0078] It should be noted that, in this application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0079] The above description is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest range consistent with the principles and novel features applied for herein.

Claims

1. An optical amplifier integrated chip with arbitrary position pump coupling, characterized in that: It includes: An end-face coupled input waveguide structure (1) is used for coupling input of fundamental mode signal light and fundamental mode pump light; A mode multiplexing structure (2) for converting fundamental mode pump light into first-order mode pump light and combining the fundamental mode signal light and the first-order mode pump light; A gain amplification waveguide structure (3), which is used to amplify fundamental mode signal light; at least one coupled pump light structure (4), which is used to couple fundamental mode pump light into any position of the gain amplification waveguide structure (3); A mode demultiplexing structure (5), which is used to demultiplex the first-order mode pump light and the amplified fundamental mode signal light; An end face coupling output structure (6) for coupling output of amplified fundamental mode signal light and fundamental mode pump light; The end-face coupled input waveguide structure (1), the mode multiplexing structure (2), the gain amplifying waveguide structure (3), the mode demultiplexing structure (5) and the end-face coupled output structure (6) are connected in sequence, and the coupled pump light structure (4) is arranged in the transmission path of the gain amplifying waveguide structure (3).

2. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The mode multiplexing structure (2) comprises: A first input waveguide (205) for inputting fundamental mode pump light; A second input waveguide (206) for inputting fundamental mode signal light; A first coupling waveguide (207) and a second coupling waveguide (208), which are used to convert input fundamental mode pump light into first-order mode pump light; An output waveguide (209) for outputting fundamental mode signal light and first-order mode pump light; The first input waveguide (205) is connected to the first coupling waveguide (207), the second input waveguide (206), the second coupling waveguide (208) and the output waveguide (209) are connected in sequence, and the first coupling waveguide (207) and the second coupling waveguide (208) are arranged in parallel.

3. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The mode multiplexing structure (2) comprises: Substrate layer one (201); An oxide layer 1 (202), which covers the top surface of the substrate layer 1 (201); A ridge-type transmission layer 1 (203), which covers the top surface of the ridge-type transmission layer 1 (203); A waveguide cladding layer 1 (204) covers the top surface of the ridge-type transmission layer 1 (203).

4. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 3, characterized in that: The material of the substrate layer 1 (201) includes silicon, the material of the ridge transmission layer 1 (203) includes silicon nitride, and the material of the oxide layer 1 (202) and the waveguide cladding layer 1 (204) include silicon dioxide.

5. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The gain amplification waveguide structure (3) comprises: Substrate layer 2 (301); A second oxide layer (302), which covers the top surface of the second substrate layer (301); A ridge waveguide gain layer (303) covering the top surface of the second oxide layer (302); The second waveguide cladding layer (304) covers the top surface of the ridge waveguide gain layer (303).

6. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 5, characterized in that: The material of the second substrate layer (301) includes silicon, the material of the ridge waveguide gain layer (303) includes erbium-doped silicon nitride, and the material of the second oxide layer (302) and the second waveguide cladding layer (304) includes silicon dioxide.

7. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The end-face coupling input waveguide structure (1) and the end-face coupling output structure (6) include a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, or an array coupling structure.

8. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The waveguide upper cladding material of the end-face coupled input waveguide structure (1), the mode multiplexing structure (2), the gain amplification waveguide structure (3), the mode demultiplexing structure (5) and the end-face coupled output structure (6) comprises silicon dioxide or polymethyl methacrylate.

9. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The gain waveguide of the gain amplification waveguide structure (3) comprises an Euler-bent straight waveguide or a spiral structure.

10. The optical amplifier integrated chip with arbitrary position pump coupling as claimed in claim 1, characterized in that: The mode multiplexing structure (2) and the mode demultiplexing structure (5) include an asymmetric directional coupler or a symmetric directional coupler structure.

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