Non-switching composite dual-mode large dynamic reconfigurable power amplifier and electronic equipment

Abstract

The invention relates to a non-switching composite dual-mode large dynamic reconfigurable power amplifier and electronic equipment. The amplifier comprises an input end dual-mode reconfigurable switching unit, an output end dual-mode reconfigurable switching unit, a high-power amplifier and a low-power amplifier, wherein the target states of the input end dual-mode reconfigurable switching unit and the output end dual-mode reconfigurable switching unit are equivalently simulated by controlling the grid voltage and the drain voltage of the high-power amplifier and the low-power amplifier, the power of the radio frequency input is amplified to obtain the radio frequency output, and the target states comprise the opening state and the closing state. Under the condition that a switch structure is not adopted, composite dual-mode reconfiguration of frequency reconfiguration and power reconfiguration is achieved, and insertion loss and parasitic effect caused by introduction of a switch in the prior art are avoided.

Description

Technical Field

[0001] The invention relates to the technical field of power amplifier monolithic microwave integrated circuits, in particular to a non-switching composite dual-mode large dynamic reconfigurable power amplifier and electronic equipment. Background Art

[0002] Functional integration is one of the important trends in system development. By sharing a set of systems to achieve multiple functions, it has the advantages of simplifying system complexity and saving resources. This usually requires the power amplifier to be able to work in a variety of different states such as different output powers or different frequencies, that is, the power amplifier must have reconfigurable characteristics.

[0003] In traditional technology, some reconfigurable power amplifiers need to introduce multiple PINs (positive-intrinsic-negative, diode switches) and multiple PIN diode switches to control the voltage. Insertion loss and parasitic effects will deteriorate the performance after reconstruction to a certain extent, while increasing the complexity and cost of the circuit. The transistor size remains unchanged in different modes, so it only supports frequency reconfiguration and cannot support power reconfiguration. In traditional technology, some reconfigurable power amplifiers use active load modulation technology to achieve reconfigurable power reconfiguration range of 2~10 times, that is, within 3dB~10dB. When the power reconfiguration range is required to reach 100 times or even larger, power reconfiguration cannot be achieved. Summary of the invention

[0004] Based on this, it is necessary to provide a non-switching composite dual-mode large dynamic reconfigurable power amplifier and electronic device that can equivalently simulate the "on" and "off" states and achieve composite dual-mode reconfigurability of power and frequency without adopting a switching structure.

[0005] In a first aspect, the present application provides a non-switching composite dual-mode large dynamic reconfigurable power amplifier, comprising: an input-end dual-mode reconfigurable switching unit, an output-end dual-mode reconfigurable switching unit, a high-power amplifier, and a low-power amplifier; Among them, the input end of the input end dual-mode reconfigurable switching unit is connected to the RF input; the output end of the input end dual-mode reconfigurable switching unit is connected to the input end of the high-power amplifier and the input end of the low-power amplifier; the input end of the output end dual-mode reconfigurable switching unit is connected to the output end of the high-power amplifier and the output end of the low-power amplifier; the output end of the output end dual-mode reconfigurable switching unit is connected to the RF output; The target states of the input dual-mode reconfigurable switching unit and the output dual-mode reconfigurable switching unit are equivalently simulated by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier, and the power of the RF input is amplified to obtain the RF output. The target states include the on state and the off state.

[0006] In one of the embodiments, the input end of the input-end dual-mode reconfigurable switching unit is connected to the RF input; the first output end of the input-end dual-mode reconfigurable switching unit is connected to the first input end of the high-power amplifier; the second output end of the input-end dual-mode reconfigurable switching unit is connected to the second input end of the high-power amplifier; the third output end of the input-end dual-mode reconfigurable switching unit is connected to the input end of the low-power amplifier; the first output end of the high-power amplifier is connected to the first input end of the output-end dual-mode reconfigurable switching unit; the second output end of the high-power amplifier is connected to the second input end of the output-end dual-mode reconfigurable switching unit; the output end of the low-power amplifier is connected to the third input end of the output-end dual-mode reconfigurable switching unit; and the output end of the output-end dual-mode reconfigurable switching unit is connected to the RF output.

[0007] In one of the embodiments, the target states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit are equivalently simulated by controlling the gate voltage and the drain voltage of the high-power amplifier and the low-power amplifier, wherein the target states include an on state and a off state; When the target state is the on state, the high power amplifier and the low power amplifier operate in normal gate voltage and drain voltage states; the first output end of the input end dual-mode reconfigurable switching unit is impedance matched with the first input end of the high power amplifier, which is equivalent to the first output end of the input end dual-mode reconfigurable switching unit being in the on state; the second output end of the input end dual-mode reconfigurable switching unit is impedance matched with the second input end of the high power amplifier, which is equivalent to the second output end of the input end dual-mode reconfigurable switching unit being in the on state; the third output end of the input end dual-mode reconfigurable switching unit is impedance matched with the input end of the low power amplifier, which is equivalent to the third output end of the input end dual-mode reconfigurable switching unit being in the on state. The first input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the first output end of the high-power amplifier, which is equivalent to the first input end of the dual-mode reconfigurable switching unit at the output end being in the on state; the second input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the second output end of the high-power amplifier, which is equivalent to the second input end of the dual-mode reconfigurable switching unit at the output end being in the on state; the third input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the output end of the low-power amplifier, which is equivalent to the third input end of the dual-mode reconfigurable switching unit at the output end being in the on state; at this time, the RF output power is the sum of the output powers of the high-power amplifier and the low-power amplifier; When the target state is the off state, the high-power amplifier operates in a gate voltage deep pinch-off state, the low-power amplifier operates in a normal gate voltage and drain voltage state, the first output end of the input dual-mode reconfigurable switching unit has a serious impedance mismatch with the first input end of the high-power amplifier, which is equivalent to the first output end of the input dual-mode reconfigurable switching unit being in the off state; the second output end of the input dual-mode reconfigurable switching unit has a serious impedance mismatch with the second input end of the high-power amplifier, which is equivalent to the second output end of the input dual-mode reconfigurable switching unit being in the off state; the third output end of the input dual-mode reconfigurable switching unit has an impedance match with the input end of the low-power amplifier, which is equivalent to the input dual-mode reconfigurable switching unit. The third output end of the switching unit is in an on state; the impedance of the first input end of the output end dual-mode reconfigurable switching unit is seriously mismatched with the first output end of the high-power amplifier, which is equivalent to the first input end of the output end dual-mode reconfigurable switching unit being in a off state; the impedance of the second input end of the output end dual-mode reconfigurable switching unit is seriously mismatched with the second output end of the high-power amplifier, which is equivalent to the second input end of the output end dual-mode reconfigurable switching unit being in a off state; the third input end of the output end dual-mode reconfigurable switching unit is impedance matched with the output end of the low-power amplifier, which is equivalent to the third input end of the output end dual-mode reconfigurable switching unit being in an on state; at this time, the RF output power is the output power of the low-power amplifier.

[0008] In one embodiment, the input-end dual-mode reconfigurable switching unit includes a first orthogonal Lange coupler Lange1, a second orthogonal Lange coupler Lange2, a first resistor R1, and a second resistor R2; The second port of the first orthogonal Lange coupler Lange1 is connected to one end of the first resistor R1, the other end of the first resistor R1 is grounded, the fourth port of the first orthogonal Lange coupler Lange1 serves as the third output end of the input-end dual-mode reconfigurable switching unit, the third port of the first orthogonal Lange coupler Lange1 is connected to the second port of the second orthogonal Lange coupler Lange2, the first port of the second orthogonal Lange coupler Lange2 is connected to one end of the second resistor R2, the other end of the second resistor R2 is grounded, the third port of the second orthogonal Lange coupler Lange2 serves as the first output end of the input-end dual-mode reconfigurable switching unit, and the fourth port of the second orthogonal Lange coupler Lange2 serves as the second output end of the input-end dual-mode reconfigurable switching unit.

[0009] In one embodiment, the output-end dual-mode reconfigurable switching unit includes a third orthogonal Lange coupler Lange3; the first port of the third orthogonal Lange coupler Lange3 serves as the first input end of the output-end dual-mode reconfigurable switching unit, the second port of the third orthogonal Lange coupler Lange3 serves as the second input end of the output-end dual-mode reconfigurable switching unit, the fourth port of the third orthogonal Lange coupler Lange3 serves as the third input end of the output-end dual-mode reconfigurable switching unit, and the third port of the third orthogonal Lange coupler Lange3 serves as the output end of the output-end dual-mode reconfigurable switching unit.

[0010] In one embodiment, the high power amplifier includes a third resistor R3 to a sixteenth resistor R 16 , the first microstrip line TL1 to the forty-sixth microstrip line TL 46 , the first capacitor C1 to the fifty-fourth capacitor C 54 , a first high electron mobility transistor HEMT1 to an eighth high electron mobility transistor HEMT8; One end of the third resistor R3 serves as the first input end of the high power amplifier; the other end of the third resistor R3 is respectively connected to the fourth resistor R4 and one end of the first capacitor C1; the other end of the fourth resistor R4 is connected to one end of the first microstrip line TL1; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is respectively connected to the second capacitor C2, the third capacitor C3 and one end of the fifth resistor R5; the other end of the second capacitor C2 is grounded; the other end of the third capacitor C3 is respectively connected to the other end of the fifth resistor R5 and one end of the second microstrip line TL2; the other end of the second microstrip line TL2 is respectively connected to one end of the third microstrip line TL3 and the gate of the first high electron mobility transistor HEMT1; the other end of the third microstrip line TL3 is respectively connected to one end of the fourth capacitor C4 and the first gate voltage V g1 The other end of the fourth capacitor C4 is grounded; the source of the first high electron mobility transistor HEMT1 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is respectively connected to the fifth microstrip line TL5 and one end of the sixth capacitor C6; the other end of the fifth microstrip line TL5 is respectively connected to one end of the fifth capacitor C5 and the first drain voltage V d1The other end of the fifth capacitor C5 is connected to the ground; the other end of the sixth capacitor C6 is respectively connected to the sixth microstrip line TL6, the seventh capacitor C7 and one end of the sixth resistor R6; the other end of the sixth microstrip line TL6 is grounded; the other end of the seventh capacitor C7 is respectively connected to the other end of the sixth resistor R6, the eighth capacitor C8 and one end of the seventh microstrip line TL7; the other end of the eighth capacitor C8 is grounded; the other end of the seventh microstrip line TL7 is respectively connected to one end of the eighth microstrip line TL8 and the gate of the second high electron mobility transistor HEMT2; the other end of the eighth microstrip line TL8 is respectively connected to one end of the ninth capacitor C9 and the first gate voltage V g1 The other end of the ninth capacitor C9 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the second high electron mobility transistor HEMT2 is connected to one end of the ninth microstrip line TL9; the other end of the ninth microstrip line TL9 is respectively connected to the tenth microstrip line TL 10 and the eleventh microstrip line TL 11 One end of the tenth microstrip line TL 10 The other end is connected to the tenth capacitor C 10 One end and the first drain voltage V d1 Connection: Tenth capacitor C 10 The other end of the eleventh microstrip line TL is grounded; 11 The other end is connected to the eleventh capacitor C 11 and the seventeenth capacitor C 17 One end of the eleventh capacitor C 11 The other end is connected to the twelfth capacitor C 12 and the thirteenth capacitor C 13 One end of the twelfth capacitor C 12 The other end of the capacitor C 13 The other end is connected to the twelfth microstrip line TL 12 , Fourteenth capacitor C 14 Connected to one end of the seventh resistor R7; the twelfth microstrip line TL 12 The other end of the fourteenth capacitor C 14 The other end of the seventh resistor R7 and the fifteenth capacitor C 15 and the thirteenth microstrip line TL 13 One end of the fifteenth capacitor C 15 The other end of the thirteenth microstrip line TL 13 The other end is connected to the fourteenth microstrip line TL 14 One end of the microstrip line TL is connected to the gate of the third high electron mobility transistor HEMT3; 14 The other end is connected to the sixteenth capacitor C 16 One end and the first gate voltage V g1 Connection: 16th capacitor C16 The other end of the seventeenth capacitor C 17 The other end is connected to the eighteenth capacitor C 18 and the nineteenth capacitor C 19 One end of the eighteenth capacitor C 18 The other end of the nineteenth capacitor C 19 The other end is connected to the fifteenth microstrip line TL 15 、20th capacitor C 20 and connected to one end of the eighth resistor R8; the fifteenth microstrip line TL 15 The other end of the twentieth capacitor C 20 The other end of the eighth resistor R8 and the twenty-first capacitor C 21 and the sixteenth microstrip line TL 16 One end of the twenty-first capacitor C 21 The other end of the sixteenth microstrip line TL 16 The other end is connected to the seventeenth microstrip line TL 17 One end of the microstrip line TL is connected to the gate of the fourth high electron mobility transistor HEMT4; 17 The other end of the 22nd capacitor C 22 One end of the 22nd capacitor C 22 The other end of the third high electron mobility transistor HEMT3 is grounded; the gate of the third high electron mobility transistor HEMT3 is connected to the gate of the fourth high electron mobility transistor HEMT4 through the ninth resistor R9; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the eighteenth microstrip line TL 18 The drain of the fourth high electron mobility transistor HEMT4 is connected to the nineteenth microstrip line TL 19 One end of the eighteenth microstrip line TL 18 The other end of the nineteenth microstrip line TL 19 The other end of the twentieth microstrip line TL 20 、The twenty-first microstrip line TL 21 and the twenty-second microstrip line TL 22 One end of the twentieth microstrip line TL 20 The other end is connected to the twenty-third capacitor C 23 One end and the first drain voltage V d1 Connection: Capacitor C 23 The other end of the twenty-first microstrip line TL 21 The other end of the 24th capacitor C 24 One end of the twenty-fourth capacitor C 24 The other end of the twenty-second microstrip line TL22 The other end is connected to the 25th capacitor C 25 and the twenty-third microstrip line TL 23 One end of the twenty-fifth capacitor C 25 The other end of the twenty-third microstrip line TL 23 The other end is connected to the twenty-sixth capacitor C 26 and the twenty-seventh capacitor C 27 One end of the twenty-sixth capacitor C 26 The other end of the capacitor C 27 The other end is used as the first output end of the high power amplifier; The tenth resistor R 10 One end of the resistor R 10 The other end is connected to the eleventh resistor R 11 and the twenty-eighth capacitor C 28 One end of the eleventh resistor R 11 The other end of the twenty-fourth microstrip line TL 24 One end of the twenty-fourth microstrip line TL 24 The other end of the capacitor C 28 The other end is connected to the 29th capacitor C 29 、Thirtieth capacitor C 30 and the twelfth resistor R 12 One end of the twenty-ninth capacitor C 29 The other end of the capacitor C 30 The other end is connected to the twelfth resistor R 12 The other end of the twenty-fifth microstrip line TL 25 One end of the twenty-fifth microstrip line TL 25 The other end is connected to the twenty-sixth microstrip line TL 26 One end of the 26th microstrip line TL is connected to the gate of the fifth high electron mobility transistor HEMT5; 26 The other end is connected to the thirty-first capacitor C 31 One end and the second gate voltage V g2 Connection: Thirty-first capacitor C 31 The other end is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the twenty-seventh microstrip line TL 27 One end of the twenty-seventh microstrip line TL 27 The other end is connected to the twenty-eighth microstrip line TL 28 and the thirty-third capacitor C 33 One end of the twenty-eighth microstrip line TL 28 The other end is connected to the thirty-second capacitor C32 One end and the second drain voltage V d2 Connection: 32nd capacitor C 32 The other end of the capacitor C 33 The other end is connected to the twenty-ninth microstrip line TL 29 、34th capacitor C 34 and the thirteenth resistor R 13 One end of the twenty-ninth microstrip line TL 29 The other end of the capacitor C 34 The other end is connected to the thirteenth resistor R 13 The other end of the thirty-fifth capacitor C 35 and the 30th microstrip line TL 30 One end of the thirty-fifth capacitor C 35 The other end of the 30th microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL 31 One end of the 31st microstrip line TL is connected to the gate of the sixth high electron mobility transistor HEMT6; 31 The other end is connected to the thirty-sixth capacitor C 36 One end and the second gate voltage V g2 Connection: Thirty-sixth capacitor C 36 The other end is grounded; the source of the sixth high electron mobility transistor HEMT6 is grounded; the drain of the sixth high electron mobility transistor HEMT6 is connected to the thirty-second microstrip line TL 32 One end of the thirty-second microstrip line TL 32 The other end is connected to the thirty-third microstrip line TL 33 and the thirty-fourth microstrip line TL 34 The thirty-third microstrip line TL 33 The other end is connected to the thirty-seventh capacitor C 37 One end and the second drain voltage V d2 Connection: Capacitor C 37 The other end of the thirty-fourth microstrip line TL 34 The other end is connected to the thirty-eighth capacitor C 38 and the forty-fourth capacitor C 44 One end of the thirty-eighth capacitor C 38 The other end is connected to the thirty-ninth capacitor C 39 and the fortieth capacitor C 40 One end of the thirty-ninth capacitor C 39 The other end of the capacitor C 40 The other end is connected to the thirty-fifth microstrip line TL 35 、41st capacitor C 41 and the fourteenth resistor R14 One end of the thirty-fifth microstrip line TL 35 The other end of the forty-first capacitor C 41 The other end is connected to the fourteenth resistor R 14 The other end of the 42nd capacitor C 42 and the thirty-sixth microstrip line TL 36 One end of the 42nd capacitor C 42 The other end of the thirty-sixth microstrip line TL 36 The other end is connected to the thirty-seventh microstrip line TL 37 One end of the 37th microstrip line TL is connected to the gate of the seventh high electron mobility transistor HEMT7; 37 The other end is connected to the forty-third capacitor C 43 One end and the seventeenth microstrip line TL 17 The other end of the forty-third capacitor C 43 The other end of the capacitor C 44 The other end is connected to the 45th capacitor C 45 and the forty-sixth capacitor C 46 One end of the forty-fifth capacitor C 45 The other end of the forty-sixth capacitor C 46 The other end is connected to the thirty-eighth microstrip line TL 38 、47th capacitor C 47 and the fifteenth resistor R 15 One end of the thirty-eighth microstrip line TL 38 The other end of the capacitor C 47 The other end is connected to the fifteenth resistor R 15 The other end of the forty-eighth capacitor C 48 and the thirty-ninth microstrip line TL 39 One end of the forty-eighth capacitor C 48 The other end is grounded; the thirty-ninth microstrip line TL 39 The other end is connected to the fortieth microstrip line TL 40 One end of the 40th microstrip line TL is connected to the gate of the eighth high electron mobility transistor HEMT8; 40 The other end is connected to the forty-ninth capacitor C 49 One end and the second gate voltage V g2 Connection: Capacitor C 49 The other end of the seventh high electron mobility transistor HEMT7 is connected to the ground through the sixteenth resistor R 16The gate of the eighth high electron mobility transistor HEMT8 is connected; the source of the seventh high electron mobility transistor HEMT7 is grounded; the source of the eighth high electron mobility transistor HEMT8 is grounded; the drain of the seventh high electron mobility transistor HEMT7 is connected to the forty-first microstrip line TL 41 The drain of the eighth high electron mobility transistor HEMT8 is connected to the forty-second microstrip line TL 42 One end of the forty-first microstrip line TL 41 The other end of the forty-second microstrip line TL 42 The other end of the forty-third microstrip line TL 43 、Forty-fourth microstrip line TL 44 and the forty-fifth microstrip line TL 45 One end of the forty-third microstrip line TL 43 The other end is connected to the 50th capacitor C 50 One end of the twenty-first microstrip line TL 21 The other end of the 50th capacitor C 50 The other end of the forty-fourth microstrip line TL 44 The other end is connected to the 51st capacitor C 51 One end and the second drain voltage V d2 Connection: 51st capacitor C 51 The other end is grounded; the forty-fifth microstrip line TL 45 The other end is connected to the fifty-second capacitor C 52 and the forty-sixth microstrip line TL 46 One end of the 52nd capacitor C 52 The other end of the forty-sixth microstrip line TL 46 The other end is connected to the fifty-third capacitor C 53 and the fifty-fourth capacitor C 54 One end of the fifty-third capacitor C 53 The other end of the capacitor C 54 The other end serves as the second output end of the high power amplifier.

[0011] In one embodiment, the low power amplifier includes a fifty-fifth capacitor C 55 To the 64th capacitor C 64 、Forty-seventh microstrip line TL 47 To the fifty-seventh microstrip line TL 57 17th resistor R 17 To the 20th resistor R 20 , ninth high electron mobility transistor HEMT9 to tenth high electron mobility transistor HEMT 10 ; Capacitor C 55One end is used as the input end of the low power amplifier; the fifty-fifth capacitor C 55 The other end of the forty-seventh microstrip line TL 47 One end of the forty-seventh microstrip line TL 47 The other end of the resistor R 17 One end of the seventeenth resistor R 17 The other end is connected to the eighteenth resistor R 18 and the fifty-sixth capacitor C 56 One end of the eighteenth resistor R 18 The other end of the forty-eighth microstrip line TL 48 One end of the forty-eighth microstrip line TL 48 The other end of the capacitor C 56 The other end is connected to the forty-ninth microstrip line TL 49 One end of the 49th microstrip line TL is connected to the gate of the ninth high electron mobility transistor HEMT9; 49 The other end of the resistor R 19 One end of the nineteenth resistor R 19 The other end is connected to the fifty-seventh capacitor C 57 One end and the third gate voltage V g3 Connection: Capacitor C 57 The other end is grounded; the source of the ninth high electron mobility transistor HEMT9 is grounded; the drain of the ninth high electron mobility transistor HEMT9 is connected to the fiftieth microstrip line TL 50 One end of the 50th microstrip line TL 50 The other end is connected to the fifty-first microstrip line TL 51 and the fifty-ninth capacitor C 59 One end of the fifty-first microstrip line TL 51 The other end is connected to the fifty-eighth capacitor C 58 One end and the third drain voltage V d3 Connection: Capacitor C 58 The other end of the capacitor C 59 The other end is connected to the fifty-second microstrip line TL 52 and the sixtieth capacitor C 60 One end of the fifty-second microstrip line TL 52 The other end of the 60th capacitor C 60 The other end is connected to the sixty-first capacitor C 61 and the fifty-third microstrip line TL 53 One end of the sixty-first capacitor C 61 The other end is grounded; the fifty-third microstrip line TL 53 The other end is connected to the fifty-fourth microstrip line TL54 One end and the tenth high electron mobility transistor HEMT 10 The gate connection; the fifty-fourth microstrip line TL 54 The other end of the resistor R 20 One end of the 20th resistor R 20 The other end is connected to the 62nd capacitor C 62 One end and the third gate voltage V g3 Connection: 62nd capacitor C 62 The other end is grounded; the tenth high electron mobility transistor HEMT 10 The source of the tenth high electron mobility transistor HEMT 10 The drain and the 55th microstrip line TL 55 One end of the fifty-fifth microstrip line TL 55 The other end is connected to the fifty-sixth microstrip line TL 56 and the fifty-seventh microstrip line TL 57 One end of the fifty-sixth microstrip line TL 56 The other end is connected to the sixty-third capacitor C 63 One end and the third drain voltage V d3 Connection: Capacitor C 63 The other end is grounded; the fifty-seventh microstrip line TL 57 The other end of the capacitor C 64 One end of the sixty-fourth capacitor C 64 The other end serves as the output end of the low power amplifier.

[0012] In one embodiment, the output power of the high power amplifier is a target multiple of the output power of the low power amplifier.

[0013] In a second aspect, the present application provides an electronic device, comprising the non-switching composite dual-mode large dynamic reconfigurable power amplifier provided in the first aspect.

[0014] The above-mentioned non-switch composite dual-mode large dynamic reconfigurable power amplifier and electronic device, without adopting a switch structure, equivalently simulates the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier, thereby avoiding the insertion loss and parasitic effects caused by the introduction of switches in traditional technologies; in the present application, the operating frequency and output power of the high-power amplifier and the low-power amplifier are independent of each other, and the composite dual-mode reconfigurable frequency and power reconfigurable are realized by combining the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit; the output power of the high-power amplifier of the present application is 100 times or more of the output power of the small-power amplifier, and the large dynamic reconfigurable power with a power difference of 100 times or even greater is supported by combining the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 It is an overall structural block diagram of a non-switching composite dual-mode large dynamic reconfigurable power amplifier in one embodiment; Figure 2 This is a schematic diagram of a high power amplifier in one embodiment; Figure 3 This is a schematic diagram of a low power amplifier in one embodiment; Figure 4 It is a schematic diagram of test results of a non-switching composite dual-mode large dynamic reconfigurable power amplifier in one embodiment. DETAILED DESCRIPTION

[0017] The accompanying drawings show embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms "first", "second", etc. used in the present application may be used to describe various elements in this article, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. "Connection" in the embodiments of the present application should be understood as "electrical connection", "communication connection", etc. if the connected circuits, modules, units, etc. have transmission of electrical signals or data to each other.

[0019] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0020] In one embodiment, Figure 1 As shown, the non-switching composite dual-mode large dynamic reconfigurable power amplifier includes: an input dual-mode reconfigurable switching unit, an output dual-mode reconfigurable switching unit, a high-power amplifier, and a low-power amplifier; wherein, the input end of the input dual-mode reconfigurable switching unit is connected to the RF input; the output end of the input dual-mode reconfigurable switching unit is connected to the input end of the high-power amplifier and the input end of the low-power amplifier; the input end of the output dual-mode reconfigurable switching unit is connected to the output end of the high-power amplifier and the output end of the low-power amplifier; the output end of the output dual-mode reconfigurable switching unit is connected to the RF output; the target states of the input dual-mode reconfigurable switching unit and the output dual-mode reconfigurable switching unit are equivalently simulated by controlling the gate voltage and the drain voltage of the high-power amplifier and the low-power amplifier, and the RF input power is amplified to obtain the RF output, and the target state includes an on state and an off state.

[0021] In this embodiment, the present application simulates the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier without using a switch structure. The operating frequency and output power of the high-power amplifier and the low-power amplifier are independent of each other. Combined with the "on" and "off" states, a composite dual-mode reconfigurable frequency and power reconfigurable is achieved. The output power of the high-power amplifier is 100 times or more of the output power of the low-power amplifier. Combined with the "on" and "off" states, it supports large dynamic reconfiguration with a power difference of 100 times or even greater.

[0022] In one embodiment, the input end of the input dual-mode reconfigurable switching unit is connected to the radio frequency input RF in The first output end of the input-end dual-mode reconfigurable switching unit is connected to the first input end of the high-power amplifier; the second output end of the input-end dual-mode reconfigurable switching unit is connected to the second input end of the high-power amplifier; the third output end of the input-end dual-mode reconfigurable switching unit is connected to the input end of the low-power amplifier; the first output end of the high-power amplifier is connected to the first input end of the output-end dual-mode reconfigurable switching unit; the second output end of the high-power amplifier is connected to the second input end of the output-end dual-mode reconfigurable switching unit; the output end of the low-power amplifier is connected to the third input end of the output-end dual-mode reconfigurable switching unit; the output end of the output-end dual-mode reconfigurable switching unit is connected to the RF output RF out connect.

[0023] In one of the embodiments, without using a switch structure, by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier, the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit are equivalently simulated.

[0024] Specifically, the equivalent simulation situations of the "on" and "off" states include: In mode one, that is, by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier to equivalently simulate the target state of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit to be "on", the high-power amplifier and the low-power amplifier operate in normal gate voltage and drain voltage states; the first output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the first input end of the high-power amplifier; equivalent to the first output end of the input-end dual-mode reconfigurable switching unit being in the "on" state; the second output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the second input end of the high-power amplifier; equivalent to the second output end of the input-end dual-mode reconfigurable switching unit being in the "on" state; the third output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the second input end of the high-power amplifier; equivalent to the second output end of the input-end dual-mode reconfigurable switching unit being in the "on" state; The output end is impedance matched with the input end of the low-power amplifier; which is equivalent to the third output end of the dual-mode reconfigurable switching unit at the input end being in the "on" state; the first input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the first output end of the high-power amplifier; which is equivalent to the first input end of the dual-mode reconfigurable switching unit at the output end being in the "on" state; the second input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the second output end of the high-power amplifier; which is equivalent to the second input end of the dual-mode reconfigurable switching unit at the output end being in the "on" state; the third input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the output end of the low-power amplifier; which is equivalent to the third input end of the dual-mode reconfigurable switching unit at the output end being in the "on" state; at this time, the RF output RF outThe power is the sum of the output powers of the high-power amplifier and the low-power amplifier; In mode two, that is, by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier to equivalently simulate the target state of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit to be "off", the high-power amplifier operates in a gate voltage deep pinch-off state, the low-power amplifier operates in a normal gate voltage and drain voltage state, the first output end of the input-end dual-mode reconfigurable switching unit and the first input end of the high-power amplifier have a serious impedance mismatch; equivalent to the first output end of the input-end dual-mode reconfigurable switching unit being in a "off" state; the second output end of the input-end dual-mode reconfigurable switching unit and the second input end of the high-power amplifier have a serious impedance mismatch; equivalent to the second output end of the input-end dual-mode reconfigurable switching unit being in a "off" state; the input-end dual-mode reconfigurable The third output end of the switching unit is impedance matched with the input end of the low-power amplifier; which is equivalent to the third output end of the dual-mode reconfigurable switching unit at the input end being in the "on" state; the first input end of the dual-mode reconfigurable switching unit at the output end is seriously mismatched in impedance with the first output end of the high-power amplifier; which is equivalent to the first input end of the dual-mode reconfigurable switching unit at the output end being in the "off" state; the second input end of the dual-mode reconfigurable switching unit at the output end is seriously mismatched in impedance with the second output end of the high-power amplifier; which is equivalent to the second input end of the dual-mode reconfigurable switching unit at the output end being in the "off" state; the third input end of the dual-mode reconfigurable switching unit at the output end is impedance matched with the output end of the low-power amplifier; which is equivalent to the third input end of the dual-mode reconfigurable switching unit at the output end being in the "on" state; at this time, the RF output RF out Power is the output power of the low power amplifier.

[0025] Exemplarily, the output power of the high power amplifier is 100 times the output power of the low power amplifier.

[0026] In this embodiment, the operating frequency and output power of the high-power amplifier and the low-power amplifier are independent of each other. Combined with the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit, a composite dual-mode reconfigurable frequency and power is achieved; the output power of the high-power amplifier is 100 times or more of the output power of the small-power amplifier. Combined with the "on" and "off" states of the input-end dual-mode reconfigurable switching unit and the output-end dual-mode reconfigurable switching unit, large dynamic reconfiguration with a power difference of 100 times or even greater is supported.

[0027] In one embodiment, Figure 1As shown, the input-end dual-mode reconfigurable switching unit includes a first orthogonal Lange coupler Lange1, a second orthogonal Lange coupler Lange2, a first resistor R1, and a second resistor R2; wherein the ① port of the first orthogonal Lange coupler Lange1 is the first port of the first orthogonal Lange coupler Lange1, the ② port of the first orthogonal Lange coupler Lange1 is the second port of the first orthogonal Lange coupler Lange1, the ③ port of the first orthogonal Lange coupler Lange1 is the third port of the first orthogonal Lange coupler Lange1, and the first orthogonal Lange coupler The fourth port of Lange1 is the fourth port of the first orthogonal Lange coupler Lange1, the first port of the second orthogonal Lange coupler Lange2 is the first port of the second orthogonal Lange coupler Lange2, the second port of the second orthogonal Lange coupler Lange2 is the second port of the second orthogonal Lange coupler Lange2, the third port of the second orthogonal Lange coupler Lange2 is the third port of the second orthogonal Lange coupler Lange2, and the fourth port of the second orthogonal Lange coupler Lange2 is the fourth port of the second orthogonal Lange coupler Lange2; The ① port of the first orthogonal Lange coupler Lange1 serves as the input end of the input-end dual-mode reconfigurable switching unit, the ② port of the first orthogonal Lange coupler Lange1 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is grounded, the ④ port of the first orthogonal Lange coupler Lange1 serves as the third output end of the input-end dual-mode reconfigurable switching unit, the ③ port of the first orthogonal Lange coupler Lange1 is connected to the ② port of the second orthogonal Lange coupler Lange2, the ① port of the second orthogonal Lange coupler Lange2 is connected to one end of the second resistor R2, and the other end of the second resistor R2 is grounded, the ③ port of the second orthogonal Lange coupler Lange2 serves as the first output end of the input-end dual-mode reconfigurable switching unit, and the ④ port of the second orthogonal Lange coupler Lange2 serves as the second output end of the input-end dual-mode reconfigurable switching unit.

[0028] In one embodiment, Figure 1 As shown, the output-end dual-mode reconfigurable switching unit includes a third orthogonal Lange coupler Lange3; wherein the ① port of the third orthogonal Lange coupler Lange3 is the first port of the third orthogonal Lange coupler Lange3, the ② port of the third orthogonal Lange coupler Lange3 is the second port of the third orthogonal Lange coupler Lange3, the ③ port of the third orthogonal Lange coupler Lange3 is the third port of the third orthogonal Lange coupler Lange3, and the ④ port of the third orthogonal Lange coupler Lange3 is the fourth port of the third orthogonal Lange coupler Lange3; The ① port of the third orthogonal Lange coupler Lange3 serves as the first input terminal of the dual-mode reconfigurable switching unit at the output end, the ② port of the third orthogonal Lange coupler Lange3 serves as the second input terminal of the dual-mode reconfigurable switching unit at the output end, the ④ port of the third orthogonal Lange coupler Lange3 serves as the third input terminal of the dual-mode reconfigurable switching unit at the output end, and the ③ port of the third orthogonal Lange coupler Lange3 serves as the output terminal of the dual-mode reconfigurable switching unit at the output end.

[0029] In one embodiment, Figure 2 As shown, the high power amplifier includes a third resistor R3 to a sixteenth resistor R 16 , the first microstrip line TL1 to the forty-sixth microstrip line TL 46 , the first capacitor C1 to the fifty-fourth capacitor C 54 , a first high electron mobility transistor HEMT1 to an eighth high electron mobility transistor HEMT8; One end of the third resistor R3 serves as the first input end of the high power amplifier; the other end of the third resistor R3 is respectively connected to the fourth resistor R4 and one end of the first capacitor C1; the other end of the fourth resistor R4 is connected to one end of the first microstrip line TL1; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is respectively connected to the second capacitor C2, the third capacitor C3 and one end of the fifth resistor R5; the other end of the second capacitor C2 is grounded; the other end of the third capacitor C3 is respectively connected to the other end of the fifth resistor R5 and one end of the second microstrip line TL2; the other end of the second microstrip line TL2 is respectively connected to one end of the third microstrip line TL3 and the gate of the first high electron mobility transistor HEMT1; the other end of the third microstrip line TL3 is respectively connected to one end of the fourth capacitor C4 and the first gate voltage V g1 The other end of the fourth capacitor C4 is grounded; the source of the first high electron mobility transistor HEMT1 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is respectively connected to the fifth microstrip line TL5 and one end of the sixth capacitor C6; the other end of the fifth microstrip line TL5 is respectively connected to one end of the fifth capacitor C5 and the first drain voltage V d1 The other end of the fifth capacitor C5 is connected to the ground; the other end of the sixth capacitor C6 is respectively connected to the sixth microstrip line TL6, the seventh capacitor C7 and one end of the sixth resistor R6; the other end of the sixth microstrip line TL6 is grounded; the other end of the seventh capacitor C7 is respectively connected to the other end of the sixth resistor R6, the eighth capacitor C8 and one end of the seventh microstrip line TL7; the other end of the eighth capacitor C8 is grounded; the other end of the seventh microstrip line TL7 is respectively connected to one end of the eighth microstrip line TL8 and the gate of the second high electron mobility transistor HEMT2; the other end of the eighth microstrip line TL8 is respectively connected to one end of the ninth capacitor C9 and the first gate voltage Vg1 The other end of the ninth capacitor C9 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the second high electron mobility transistor HEMT2 is connected to one end of the ninth microstrip line TL9; the other end of the ninth microstrip line TL9 is respectively connected to the tenth microstrip line TL 10 and the eleventh microstrip line TL 11 One end of the tenth microstrip line TL 10 The other end is connected to the tenth capacitor C 10 One end and the first drain voltage V d1 Connection: Tenth capacitor C 10 The other end of the eleventh microstrip line TL is grounded; 11 The other end is connected to the eleventh capacitor C 11 and the seventeenth capacitor C 17 One end of the eleventh capacitor C 11 The other end is connected to the twelfth capacitor C 12 and the thirteenth capacitor C 13 One end of the twelfth capacitor C 12 The other end of the capacitor C 13 The other end is connected to the twelfth microstrip line TL 12 , Fourteenth capacitor C 14 Connected to one end of the seventh resistor R7; the twelfth microstrip line TL 12 The other end of the fourteenth capacitor C 14 The other end of the seventh resistor R7 and the fifteenth capacitor C 15 and the thirteenth microstrip line TL 13 One end of the fifteenth capacitor C 15 The other end of the thirteenth microstrip line TL 13 The other end is connected to the fourteenth microstrip line TL 14 One end of the microstrip line TL is connected to the gate of the third high electron mobility transistor HEMT3; 14 The other end is connected to the sixteenth capacitor C 16 One end and the first gate voltage V g1 Connection: 16th capacitor C 16 The other end of the seventeenth capacitor C 17 The other end is connected to the eighteenth capacitor C 18 and the nineteenth capacitor C 19 One end of the eighteenth capacitor C 18 The other end of the nineteenth capacitor C 19 The other end is connected to the fifteenth microstrip line TL 15 、20th capacitor C 20 and connected to one end of the eighth resistor R8; the fifteenth microstrip line TL15 The other end of the twentieth capacitor C 20 The other end of the eighth resistor R8 and the twenty-first capacitor C 21 and the sixteenth microstrip line TL 16 One end of the twenty-first capacitor C 21 The other end of the sixteenth microstrip line TL 16 The other end is connected to the seventeenth microstrip line TL 17 One end of the microstrip line TL is connected to the gate of the fourth high electron mobility transistor HEMT4; 17 The other end of the 22nd capacitor C 22 One end of the 22nd capacitor C 22 The other end of the third high electron mobility transistor HEMT3 is grounded; the gate of the third high electron mobility transistor HEMT3 is connected to the gate of the fourth high electron mobility transistor HEMT4 through the ninth resistor R9; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the eighteenth microstrip line TL 18 The drain of the fourth high electron mobility transistor HEMT4 is connected to the nineteenth microstrip line TL 19 One end of the eighteenth microstrip line TL 18 The other end of the nineteenth microstrip line TL 19 The other end of the twentieth microstrip line TL 20 、The twenty-first microstrip line TL 21 and the twenty-second microstrip line TL 22 One end of the twentieth microstrip line TL 20 The other end is connected to the twenty-third capacitor C 23 One end and the first drain voltage V d1 Connection: Capacitor C 23 The other end of the twenty-first microstrip line TL 21 The other end of the 24th capacitor C 24 One end of the twenty-fourth capacitor C 24 The other end of the twenty-second microstrip line TL 22 The other end is connected to the 25th capacitor C 25 and the twenty-third microstrip line TL 23 One end of the twenty-fifth capacitor C 25 The other end of the twenty-third microstrip line TL 23 The other end is connected to the twenty-sixth capacitor C 26 and the twenty-seventh capacitor C 27 One end of the twenty-sixth capacitor C 26 The other end of the capacitor C27 The other end is used as the first output end of the high power amplifier; The tenth resistor R 10 One end of the resistor R 10 The other end is connected to the eleventh resistor R 11 and the twenty-eighth capacitor C 28 One end of the eleventh resistor R 11 The other end of the twenty-fourth microstrip line TL 24 One end of the twenty-fourth microstrip line TL 24 The other end of the capacitor C 28 The other end is connected to the 29th capacitor C 29 、Thirtieth capacitor C 30 and the twelfth resistor R 12 One end of the twenty-ninth capacitor C 29 The other end of the capacitor C 30 The other end is connected to the twelfth resistor R 12 The other end of the twenty-fifth microstrip line TL 25 One end of the twenty-fifth microstrip line TL 25 The other end is connected to the twenty-sixth microstrip line TL 26 One end of the 26th microstrip line TL is connected to the gate of the fifth high electron mobility transistor HEMT5; 26 The other end is connected to the thirty-first capacitor C 31 One end and the second gate voltage V g2 Connection: Thirty-first capacitor C 31 The other end is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the twenty-seventh microstrip line TL 27 One end of the twenty-seventh microstrip line TL 27 The other end is connected to the twenty-eighth microstrip line TL 28 and the thirty-third capacitor C 33 One end of the twenty-eighth microstrip line TL 28 The other end is connected to the thirty-second capacitor C 32 One end and the second drain voltage V d2 Connection: 32nd capacitor C 32 The other end of the capacitor C 33 The other end is connected to the twenty-ninth microstrip line TL 29 、34th capacitor C 34 and the thirteenth resistor R 13 One end of the twenty-ninth microstrip line TL 29 The other end of the capacitor C34 The other end is connected to the thirteenth resistor R 13 The other end of the thirty-fifth capacitor C 35 and the 30th microstrip line TL 30 One end of the thirty-fifth capacitor C 35 The other end of the 30th microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL 31 One end of the 31st microstrip line TL is connected to the gate of the sixth high electron mobility transistor HEMT6; 31 The other end is connected to the thirty-sixth capacitor C 36 One end and the second gate voltage V g2 Connection: Thirty-sixth capacitor C 36 The other end is grounded; the source of the sixth high electron mobility transistor HEMT6 is grounded; the drain of the sixth high electron mobility transistor HEMT6 is connected to the thirty-second microstrip line TL 32 One end of the thirty-second microstrip line TL 32 The other end is connected to the thirty-third microstrip line TL 33 and the thirty-fourth microstrip line TL 34 The thirty-third microstrip line TL 33 The other end is connected to the thirty-seventh capacitor C 37 One end and the second drain voltage V d2 Connection: Capacitor C 37 The other end of the thirty-fourth microstrip line TL 34 The other end is connected to the thirty-eighth capacitor C 38 and the forty-fourth capacitor C 44 One end of the thirty-eighth capacitor C 38 The other end is connected to the thirty-ninth capacitor C 39 and the fortieth capacitor C 40 One end of the thirty-ninth capacitor C 39 The other end of the capacitor C 40 The other end is connected to the thirty-fifth microstrip line TL 35 、41st capacitor C 41 and the fourteenth resistor R 14 One end of the thirty-fifth microstrip line TL 35 The other end of the forty-first capacitor C 41 The other end is connected to the fourteenth resistor R 14 The other end of the 42nd capacitor C 42 and the thirty-sixth microstrip line TL 36 One end of the 42nd capacitor C 42 The other end of the thirty-sixth microstrip line TL 36The other end is connected to the thirty-seventh microstrip line TL 37 One end of the 37th microstrip line TL is connected to the gate of the seventh high electron mobility transistor HEMT7; 37 The other end is connected to the forty-third capacitor C 43 One end and the seventeenth microstrip line TL 17 The other end of the forty-third capacitor C 43 The other end of the capacitor C 44 The other end is connected to the 45th capacitor C 45 and the forty-sixth capacitor C 46 One end of the forty-fifth capacitor C 45 The other end of the forty-sixth capacitor C 46 The other end is connected to the thirty-eighth microstrip line TL 38 、47th capacitor C 47 and the fifteenth resistor R 15 One end of the thirty-eighth microstrip line TL 38 The other end of the capacitor C 47 The other end is connected to the fifteenth resistor R 15 The other end of the forty-eighth capacitor C 48 and the thirty-ninth microstrip line TL 39 One end of the forty-eighth capacitor C 48 The other end is grounded; the thirty-ninth microstrip line TL 39 The other end is connected to the fortieth microstrip line TL 40 One end of the 40th microstrip line TL is connected to the gate of the eighth high electron mobility transistor HEMT8; 40 The other end is connected to the forty-ninth capacitor C 49 One end and the second gate voltage V g2 Connection: Capacitor C 49 The other end of the seventh high electron mobility transistor HEMT7 is connected to the ground through the sixteenth resistor R 16 The gate of the eighth high electron mobility transistor HEMT8 is connected; the source of the seventh high electron mobility transistor HEMT7 is grounded; the source of the eighth high electron mobility transistor HEMT8 is grounded; the drain of the seventh high electron mobility transistor HEMT7 is connected to the forty-first microstrip line TL 41 The drain of the eighth high electron mobility transistor HEMT8 is connected to the forty-second microstrip line TL 42 One end of the forty-first microstrip line TL 41 The other end of the forty-second microstrip line TL 42 The other end of the forty-third microstrip line TL 43 、Forty-fourth microstrip line TL 44and the forty-fifth microstrip line TL 45 One end of the forty-third microstrip line TL 43 The other end is connected to the 50th capacitor C 50 One end of the twenty-first microstrip line TL 21 The other end of the 50th capacitor C 50 The other end of the forty-fourth microstrip line TL 44 The other end is connected to the 51st capacitor C 51 One end and the second drain voltage V d2 Connection: 51st capacitor C 51 The other end is grounded; the forty-fifth microstrip line TL 45 The other end is connected to the fifty-second capacitor C 52 and the forty-sixth microstrip line TL 46 One end of the 52nd capacitor C 52 The other end of the forty-sixth microstrip line TL 46 The other end is connected to the fifty-third capacitor C 53 and the fifty-fourth capacitor C 54 One end of the fifty-third capacitor C 53 The other end of the capacitor C 54 The other end serves as the second output end of the high power amplifier.

[0030] In one embodiment, Figure 3 As shown, the low power amplifier includes a fifty-fifth capacitor C 55 To the 64th capacitor C 64 、Forty-seventh microstrip line TL 47 To the fifty-seventh microstrip line TL 57 17th resistor R 17 To the 20th resistor R 20 , ninth high electron mobility transistor HEMT9 to tenth high electron mobility transistor HEMT 10 ; Capacitor C 55 One end is used as the input end of the low power amplifier; the fifty-fifth capacitor C 55 The other end of the forty-seventh microstrip line TL 47 One end of the forty-seventh microstrip line TL 47 The other end of the resistor R 17 One end of the seventeenth resistor R 17 The other end is connected to the eighteenth resistor R 18 and the fifty-sixth capacitor C 56 One end of the eighteenth resistor R 18 The other end of the forty-eighth microstrip line TL 48One end of the forty-eighth microstrip line TL 48 The other end of the capacitor C 56 The other end is connected to the forty-ninth microstrip line TL 49 One end of the 49th microstrip line TL is connected to the gate of the ninth high electron mobility transistor HEMT9; 49 The other end of the resistor R 19 One end of the nineteenth resistor R 19 The other end is connected to the fifty-seventh capacitor C 57 One end and the third gate voltage V g3 Connection: Capacitor C 57 The other end is grounded; the source of the ninth high electron mobility transistor HEMT9 is grounded; the drain of the ninth high electron mobility transistor HEMT9 is connected to the fiftieth microstrip line TL 50 One end of the 50th microstrip line TL 50 The other end is connected to the fifty-first microstrip line TL 51 and the fifty-ninth capacitor C 59 One end of the fifty-first microstrip line TL 51 The other end is connected to the fifty-eighth capacitor C 58 One end and the third drain voltage V d3 Connection: Capacitor C 58 The other end of the capacitor C 59 The other end is connected to the fifty-second microstrip line TL 52 and the 60th capacitor C 60 One end of the fifty-second microstrip line TL 52 The other end of the 60th capacitor C 60 The other end is connected to the sixty-first capacitor C 61 and the fifty-third microstrip line TL 53 One end of the sixty-first capacitor C 61 The other end is grounded; the fifty-third microstrip line TL 53 The other end is connected to the fifty-fourth microstrip line TL 54 One end and the tenth high electron mobility transistor HEMT 10 The gate connection; the fifty-fourth microstrip line TL 54 The other end of the resistor R 20 One end of the 20th resistor R 20 The other end is connected to the 62nd capacitor C 62 One end and the third gate voltage V g3 Connection: 62nd capacitor C 62 The other end is grounded; the tenth high electron mobility transistor HEMT 10The source of the tenth high electron mobility transistor HEMT 10 The drain and the 55th microstrip line TL 55 One end of the fifty-fifth microstrip line TL 55 The other end is connected to the fifty-sixth microstrip line TL 56 and the fifty-seventh microstrip line TL 57 One end of the fifty-sixth microstrip line TL 56 The other end is connected to the sixty-third capacitor C 63 One end and the third drain voltage V d3 Connection: Capacitor C 63 The other end is grounded; the fifty-seventh microstrip line TL 57 The other end of the capacitor C 64 One end of the sixty-fourth capacitor C 64 The other end serves as the output end of the low power amplifier.

[0031] In one embodiment, the test results of a non-switching composite dual-mode large dynamic reconfigurable power amplifier are as follows: Figure 4 As shown, composite dual-mode reconfiguration with frequency reconfiguration (5-13GHz and 6-12GHz) and power reconfiguration (49dBm and 27dBm) is achieved; the power reconfiguration values ​​are 49dBm (80W) and 27dBm (0.5W), achieving large dynamic reconfiguration with a power magnitude difference of 160 times.

[0032] In one embodiment, the present application also provides an electronic device, including the non-switching composite dual-mode large dynamic reconfigurable power amplifier provided in the above embodiment. Among them, the structure of the non-switching composite dual-mode large dynamic reconfigurable power amplifier can refer to the description of the above embodiment, and will not be repeated here. Since the electronic device provided by the embodiment of the present invention adopts the structure of the non-switching composite dual-mode large dynamic reconfigurable power amplifier in the above embodiment, the electronic device provided by the embodiment of the present invention can achieve all the beneficial effects of the non-switching composite dual-mode large dynamic reconfigurable power amplifier in the above embodiment.

[0033] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. For those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A non-switching composite dual-mode large dynamic reconfigurable power amplifier, characterized in that: include: An input-end dual-mode reconfigurable switching unit, an output-end dual-mode reconfigurable switching unit, a high-power amplifier, and a low-power amplifier; Among them, the input end of the input-end dual-mode reconfigurable switching unit is connected to the RF input; the output end of the input-end dual-mode reconfigurable switching unit is connected to the input end of the high-power amplifier and the input end of the low-power amplifier; the input end of the output-end dual-mode reconfigurable switching unit is connected to the output end of the high-power amplifier and the output end of the low-power amplifier; the output end of the output-end dual-mode reconfigurable switching unit is connected to the RF output; The target states of the input dual-mode reconfigurable switching unit and the output dual-mode reconfigurable switching unit are equivalently simulated by controlling the gate voltage and drain voltage of the high-power amplifier and the low-power amplifier, and the power of the RF input is amplified to obtain the RF output, and the target state includes an on state and an off state.

2. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 1, characterized in that: The input end of the input-end dual-mode reconfigurable switching unit is connected to the RF input; the first output end of the input-end dual-mode reconfigurable switching unit is connected to the first input end of the high-power amplifier; The second output end of the input-end dual-mode reconfigurable switching unit is connected to the second input end of the high-power amplifier; The third output end of the input-end dual-mode reconfigurable switching unit is connected to the input end of the low-power amplifier; the first output end of the high-power amplifier is connected to the first input end of the output-end dual-mode reconfigurable switching unit; the second output end of the high-power amplifier is connected to the second input end of the output-end dual-mode reconfigurable switching unit; the output end of the low-power amplifier is connected to the third input end of the output-end dual-mode reconfigurable switching unit; and the output end of the output-end dual-mode reconfigurable switching unit is connected to the RF output.

3. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 2, characterized in that: When the target state is the on state, the high-power amplifier and the low-power amplifier operate in normal gate voltage and drain voltage states; the first output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the first input end of the high-power amplifier, which is equivalent to the first output end of the input-end dual-mode reconfigurable switching unit being in the on state; The second output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the second input end of the high-power amplifier, which is equivalent to the second output end of the input-end dual-mode reconfigurable switching unit being in an open state; The third output end of the input-end dual-mode reconfigurable switching unit is impedance matched with the input end of the low-power amplifier, which is equivalent to the third output end of the input-end dual-mode reconfigurable switching unit being in an on state; the first input end of the output-end dual-mode reconfigurable switching unit is impedance matched with the first output end of the high-power amplifier, which is equivalent to the first input end of the output-end dual-mode reconfigurable switching unit being in an on state; the second input end of the output-end dual-mode reconfigurable switching unit is impedance matched with the second output end of the high-power amplifier, which is equivalent to the second input end of the output-end dual-mode reconfigurable switching unit being in an on state; the third input end of the output-end dual-mode reconfigurable switching unit is impedance matched with the output end of the low-power amplifier, which is equivalent to the third input end of the output-end dual-mode reconfigurable switching unit being in an on state; at this time, the RF output power is the sum of the output powers of the high-power amplifier and the low-power amplifier; When the target state is the off state, the high-power amplifier operates in a gate voltage deep pinch-off state, the low-power amplifier operates in a normal gate voltage and drain voltage state, the first output end of the input-end dual-mode reconfigurable switching unit has a serious impedance mismatch with the first input end of the high-power amplifier, which is equivalent to the first output end of the input-end dual-mode reconfigurable switching unit being in the off state; the second output end of the input-end dual-mode reconfigurable switching unit has a serious impedance mismatch with the second input end of the high-power amplifier, which is equivalent to the second output end of the input-end dual-mode reconfigurable switching unit being in the off state; the third output end of the input-end dual-mode reconfigurable switching unit has an impedance match with the input end of the low-power amplifier, which is equivalent to the input-end dual-mode The third output end of the reconfigurable switching unit is in an open state; the first input end of the output end dual-mode reconfigurable switching unit has a serious impedance mismatch with the first output end of the high-power amplifier, which is equivalent to the first input end of the output end dual-mode reconfigurable switching unit being in a closed state; the second input end of the output end dual-mode reconfigurable switching unit has a serious impedance mismatch with the second output end of the high-power amplifier, which is equivalent to the second input end of the output end dual-mode reconfigurable switching unit being in a closed state; the third input end of the output end dual-mode reconfigurable switching unit has an impedance match with the output end of the low-power amplifier, which is equivalent to the third input end of the output end dual-mode reconfigurable switching unit being in an open state; at this time, the RF output power is the output power of the low-power amplifier.

4. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 3, characterized in that: The input-end dual-mode reconfigurable switching unit includes a first orthogonal Lange coupler Lange1, a second orthogonal Lange coupler Lange2, a first resistor R1, and a second resistor R2; The first port of the first orthogonal Lange coupler Lange1 serves as the input end of the input-end dual-mode reconfigurable switching unit, the second port of the first orthogonal Lange coupler Lange1 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is grounded, the fourth port of the first orthogonal Lange coupler Lange1 serves as the third output end of the input-end dual-mode reconfigurable switching unit, the third port of the first orthogonal Lange coupler Lange1 is connected to the second port of the second orthogonal Lange coupler Lange2, the first port of the second orthogonal Lange coupler Lange2 is connected to one end of the second resistor R2, and the other end of the second resistor R2 is grounded, the third port of the second orthogonal Lange coupler Lange2 serves as the first output end of the input-end dual-mode reconfigurable switching unit, and the fourth port of the second orthogonal Lange coupler Lange2 serves as the second output end of the input-end dual-mode reconfigurable switching unit.

5. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 4, characterized in that: The output-end dual-mode reconfigurable switching unit includes a third orthogonal Lange coupler Lange3; the first port of the third orthogonal Lange coupler Lange3 serves as the first input end of the output-end dual-mode reconfigurable switching unit, the second port of the third orthogonal Lange coupler Lange3 serves as the second input end of the output-end dual-mode reconfigurable switching unit, the fourth port of the third orthogonal Lange coupler Lange3 serves as the third input end of the output-end dual-mode reconfigurable switching unit, and the third port of the third orthogonal Lange coupler Lange3 serves as the output end of the output-end dual-mode reconfigurable switching unit.

6. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 5, characterized in that: The high power amplifier includes a third resistor R3 to a sixteenth resistor R 16 , the first microstrip line TL1 to the forty-sixth microstrip line TL 46 , the first capacitor C1 to the fifty-fourth capacitor C 54 , a first high electron mobility transistor HEMT1 to an eighth high electron mobility transistor HEMT8; One end of the third resistor R3 serves as the first input end of the high power amplifier; the other end of the third resistor R3 is respectively connected to the fourth resistor R4 and one end of the first capacitor C1; the other end of the fourth resistor R4 is connected to one end of the first microstrip line TL1; the other end of the first microstrip line TL1 is grounded; the other end of the first capacitor C1 is respectively connected to the second capacitor C2, the third capacitor C3 and one end of the fifth resistor R5; the other end of the second capacitor C2 is grounded; the other end of the third capacitor C3 is respectively connected to the other end of the fifth resistor R5 and one end of the second microstrip line TL2; the other end of the second microstrip line TL2 is respectively connected to one end of the third microstrip line TL3 and the gate of the first high electron mobility transistor HEMT1; the other end of the third microstrip line TL3 is respectively connected to one end of the fourth capacitor C4 and the first gate voltage V g1 The other end of the fourth capacitor C4 is grounded; the source of the first high electron mobility transistor HEMT1 is grounded; the drain of the first high electron mobility transistor HEMT1 is connected to one end of the fourth microstrip line TL4; the other end of the fourth microstrip line TL4 is respectively connected to the fifth microstrip line TL5 and one end of the sixth capacitor C6; the other end of the fifth microstrip line TL5 is respectively connected to one end of the fifth capacitor C5 and the first drain voltage V d1 The other end of the fifth capacitor C5 is connected to the ground; the other end of the sixth capacitor C6 is respectively connected to the sixth microstrip line TL6, the seventh capacitor C7 and one end of the sixth resistor R6; the other end of the sixth microstrip line TL6 is grounded; the other end of the seventh capacitor C7 is respectively connected to the other end of the sixth resistor R6, the eighth capacitor C8 and one end of the seventh microstrip line TL7; the other end of the eighth capacitor C8 is grounded; the other end of the seventh microstrip line TL7 is respectively connected to one end of the eighth microstrip line TL8 and the gate of the second high electron mobility transistor HEMT2; the other end of the eighth microstrip line TL8 is respectively connected to one end of the ninth capacitor C9 and the first gate voltage V g1 The other end of the ninth capacitor C9 is grounded; the source of the second high electron mobility transistor HEMT2 is grounded; the drain of the second high electron mobility transistor HEMT2 is connected to one end of the ninth microstrip line TL9; the other end of the ninth microstrip line TL9 is respectively connected to the tenth microstrip line TL 10 and the eleventh microstrip line TL 11 The tenth microstrip line TL 10 The other end is connected to the tenth capacitor C 10 One end and the first drain voltage V d1 Connection: the tenth capacitor C 10 The other end of the eleventh microstrip line TL is grounded; 11 The other end is connected to the eleventh capacitor C 11 and the seventeenth capacitor C 17 The eleventh capacitor C 11 The other end is connected to the twelfth capacitor C 12 and the thirteenth capacitor C 13 The twelfth capacitor C 12 The other end of the thirteenth capacitor C 13 The other end is connected to the twelfth microstrip line TL 12 , Fourteenth capacitor C 14 and one end of the seventh resistor R7; the twelfth microstrip line TL 12 The other end of the fourteenth capacitor C 14 The other end of the seventh resistor R7 and the fifteenth capacitor C 15 and the thirteenth microstrip line TL 13 The fifteenth capacitor C 15 The other end of the thirteenth microstrip line TL 13 The other end is connected to the fourteenth microstrip line TL 14 One end of the microstrip line TL is connected to the gate of the third high electron mobility transistor HEMT3; 14 The other end is connected to the sixteenth capacitor C 16 One end and the first gate voltage V g1 Connect; the sixteenth capacitor C 16 The other end of the seventeenth capacitor C 17 The other end is connected to the eighteenth capacitor C 18 and the nineteenth capacitor C 19 The eighteenth capacitor C 18 The other end of the nineteenth capacitor C 19 The other end is connected to the fifteenth microstrip line TL 15 、20th capacitor C 20 and connected to one end of the eighth resistor R8; the fifteenth microstrip line TL 15 The other end of the 20th capacitor C 20 The other end of the eighth resistor R8 and the twenty-first capacitor C 21 and the sixteenth microstrip line TL 16 One end of the twenty-first capacitor C 21 The other end of the sixteenth microstrip line TL 16 The other end is connected to the seventeenth microstrip line TL 17 One end of the microstrip line TL is connected to the gate of the fourth high electron mobility transistor HEMT4; 17 The other end of the 22nd capacitor C 22 The twenty-second capacitor C 22 The other end of the third high electron mobility transistor HEMT3 is grounded; the gate of the third high electron mobility transistor HEMT3 is connected to the gate of the fourth high electron mobility transistor HEMT4 through the ninth resistor R9; the source of the third high electron mobility transistor HEMT3 is grounded; the source of the fourth high electron mobility transistor HEMT4 is grounded; the drain of the third high electron mobility transistor HEMT3 is connected to the eighteenth microstrip line TL 18 The drain of the fourth high electron mobility transistor HEMT4 is connected to the nineteenth microstrip line TL 19 The eighteenth microstrip line TL 18 The other end of the nineteenth microstrip line TL 19 The other end of the twentieth microstrip line TL 20 、The twenty-first microstrip line TL 21 and the twenty-second microstrip line TL 22 The 20th microstrip line TL 20 The other end is connected to the twenty-third capacitor C 23 One end and the first drain voltage V d1 Connection: The twenty-third capacitor C 23 The other end of the twenty-first microstrip line TL 21 The other end of the 24th capacitor C 24 One end of the twenty-fourth capacitor C 24 The other end of the twenty-second microstrip line TL 22 The other end is connected to the 25th capacitor C 25 and the twenty-third microstrip line TL 23 One end of the twenty-fifth capacitor C 25 The other end of the twenty-third microstrip line TL 23 The other end is connected to the twenty-sixth capacitor C 26 and the twenty-seventh capacitor C 27 One end of the twenty-sixth capacitor C 26 The other end of the twenty-seventh capacitor C 27 The other end is used as the first output end of the high power amplifier; The tenth resistor R 10 One end of the tenth resistor R 10 The other end is connected to the eleventh resistor R 11 and the twenty-eighth capacitor C 28 The eleventh resistor R 11 The other end of the twenty-fourth microstrip line TL 24 The twenty-fourth microstrip line TL 24 The other end of the twenty-eighth capacitor C 28 The other end is connected to the 29th capacitor C 29 、Thirtieth capacitor C 30 and the twelfth resistor R 12 One end of the twenty-ninth capacitor C 29 The other end of the capacitor C 30 The other end is connected to the twelfth resistor R 12 The other end of the twenty-fifth microstrip line TL 25 The twenty-fifth microstrip line TL 25 The other end is connected to the twenty-sixth microstrip line TL 26 One end of the second microstrip line TL is connected to the gate of the fifth high electron mobility transistor HEMT5; 26 The other end is connected to the thirty-first capacitor C 31 One end and the second gate voltage V g2 Connect; the thirty-first capacitor C 31 The other end of the fifth high electron mobility transistor HEMT5 is grounded; the source of the fifth high electron mobility transistor HEMT5 is grounded; the drain of the fifth high electron mobility transistor HEMT5 is connected to the twenty-seventh microstrip line TL 27 The twenty-seventh microstrip line TL 27 The other end is connected to the twenty-eighth microstrip line TL 28 and the thirty-third capacitor C 33 The twenty-eighth microstrip line TL 28 The other end is connected to the thirty-second capacitor C 32 One end and the second drain voltage V d2 Connection: the thirty-second capacitor C 32 The other end of the thirty-third capacitor C 33 The other end is connected to the twenty-ninth microstrip line TL 29 、34th capacitor C 34 and the thirteenth resistor R 13 The twenty-ninth microstrip line TL 29 The other end of the thirty-fourth capacitor C 34 The other end is connected to the thirteenth resistor R 13 The other end of the thirty-fifth capacitor C 35 and the 30th microstrip line TL 30 The thirty-fifth capacitor C 35 The other end of the 30th microstrip line TL 30 The other end is connected to the thirty-first microstrip line TL 31 One end of the 31st microstrip line TL is connected to the gate of the sixth high electron mobility transistor HEMT6; 31 The other end is connected to the thirty-sixth capacitor C 36 One end and the second gate voltage V g2 Connection: the thirty-sixth capacitor C 36 The other end of the sixth high electron mobility transistor HEMT6 is grounded; the source of the sixth high electron mobility transistor HEMT6 is grounded; the drain of the sixth high electron mobility transistor HEMT6 is connected to the thirty-second microstrip line TL 32 The thirty-second microstrip line TL 32 The other end is connected to the thirty-third microstrip line TL 33 and the thirty-fourth microstrip line TL 34 The thirty-third microstrip line TL 33 The other end is connected to the thirty-seventh capacitor C 37 One end and the second drain voltage V d2 The thirty-seventh capacitor C 37 The other end of the thirty-fourth microstrip line TL 34 The other end is connected to the thirty-eighth capacitor C 38 and the forty-fourth capacitor C 44 The thirty-eighth capacitor C 38 The other end is connected to the thirty-ninth capacitor C 39 and the fortieth capacitor C 40 The thirty-ninth capacitor C 39 The other end of the capacitor C 40 The other end is connected to the thirty-fifth microstrip line TL 35 、41st capacitor C 41 and the fourteenth resistor R 14 The thirty-fifth microstrip line TL 35 The other end of the forty-first capacitor C 41 The other end is connected to the fourteenth resistor R 14 The other end of the 42nd capacitor C 42 and the thirty-sixth microstrip line TL 36 The forty-second capacitor C 42 The other end of the thirty-sixth microstrip line TL 36 The other end is connected to the thirty-seventh microstrip line TL 37 One end of the 37th microstrip line TL is connected to the gate of the seventh high electron mobility transistor HEMT7; 37 The other end is connected to the forty-third capacitor C 43 One end and the seventeenth microstrip line TL 17 The other end of the forty-third capacitor C 43 The other end of the forty-fourth capacitor C 44 The other end is connected to the 45th capacitor C 45 and the forty-sixth capacitor C 46 one end of the forty-fifth capacitor C 45 The other end of the forty-sixth capacitor C 46 The other end is connected to the thirty-eighth microstrip line TL 38 、47th capacitor C 47 and the fifteenth resistor R 15 The thirty-eighth microstrip line TL 38 The other end of the forty-seventh capacitor C 47 The other end is connected to the fifteenth resistor R 15 The other end of the forty-eighth capacitor C 48 and the thirty-ninth microstrip line TL 39 The forty-eighth capacitor C 48 The other end of the thirty-ninth microstrip line TL 39 The other end is connected to the fortieth microstrip line TL 40 One end of the 40th microstrip line TL is connected to the gate of the eighth high electron mobility transistor HEMT8; 40 The other end is connected to the forty-ninth capacitor C 49 One end and the second gate voltage V g2 Connection: the forty-ninth capacitor C 49 The other end of the seventh high electron mobility transistor HEMT7 is connected to the ground through the sixteenth resistor R 16 The gate of the eighth high electron mobility transistor HEMT8 is connected; the source of the seventh high electron mobility transistor HEMT7 is grounded; the source of the eighth high electron mobility transistor HEMT8 is grounded; the drain of the seventh high electron mobility transistor HEMT7 is connected to the forty-first microstrip line TL 41 The drain of the eighth high electron mobility transistor HEMT8 is connected to the forty-second microstrip line TL 42 The forty-first microstrip line TL 41 The other end of the 42nd microstrip line TL 42 The other end of the forty-third microstrip line TL 43 、Forty-fourth microstrip line TL 44 and the forty-fifth microstrip line TL 45 The forty-third microstrip line TL 43 The other end is connected to the 50th capacitor C 50 One end of the twenty-first microstrip line TL 21 The other end of the 50th capacitor C 50 The other end of the forty-fourth microstrip line TL 44 The other end is connected to the 51st capacitor C 51 One end and the second drain voltage V d2 Connect the fifty-first capacitor C 51 The other end of the forty-fifth microstrip line TL 45 The other end is connected to the fifty-second capacitor C 52 and the forty-sixth microstrip line TL 46 The fifty-second capacitor C 52 The other end of the forty-sixth microstrip line TL 46 The other end is connected to the fifty-third capacitor C 53 and the fifty-fourth capacitor C 54 The fifty-third capacitor C 53 The other end of the fifty-fourth capacitor C 54 The other end serves as the second output end of the high power amplifier.

7. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 6, characterized in that: The low power amplifier includes a fifty-fifth capacitor C 55 To the 64th capacitor C 64 、Forty-seventh microstrip line TL 47 To the fifty-seventh microstrip line TL 57 17th resistor R 17 To the 20th resistor R 20 , ninth high electron mobility transistor HEMT9 to tenth high electron mobility transistor HEMT 10 ; The fifty-fifth capacitor C 55 One end is used as the input end of the low power amplifier; the fifty-fifth capacitor C 55 The other end of the forty-seventh microstrip line TL 47 The forty-seventh microstrip line TL 47 The other end of the resistor R 17 The seventeenth resistor R 17 The other end is connected to the eighteenth resistor R 18 and the fifty-sixth capacitor C 56 The eighteenth resistor R 18 The other end of the forty-eighth microstrip line TL 48 The forty-eighth microstrip line TL 48 The other end of the fifty-sixth capacitor C 56 The other end is connected to the forty-ninth microstrip line TL 49 One end of the forty-ninth microstrip line TL is connected to the gate of the ninth high electron mobility transistor HEMT9; 49 The other end of the resistor R 19 The nineteenth resistor R 19 The other end is connected to the fifty-seventh capacitor C 57 One end and the third gate voltage V g3 Connection; the fifty-seventh capacitor C 57 The other end of the ninth high electron mobility transistor HEMT9 is grounded; the source of the ninth high electron mobility transistor HEMT9 is grounded; the drain of the ninth high electron mobility transistor HEMT9 is connected to the fiftieth microstrip line TL 50 The fiftieth microstrip line TL 50 The other end is connected to the fifty-first microstrip line TL 51 and the fifty-ninth capacitor C 59 The fifty-first microstrip line TL 51 The other end is connected to the fifty-eighth capacitor C 58 One end and the third drain voltage V d3 Connection; the fifty-eighth capacitor C 58 The other end of the fifty-ninth capacitor C 59 The other end is connected to the fifty-second microstrip line TL 52 and the 60th capacitor C 60 The fifty-second microstrip line TL 52 The other end of the sixtieth capacitor C 60 The other end is connected to the sixty-first capacitor C 61 and the fifty-third microstrip line TL 53 One end of the sixty-first capacitor C 61 The other end of the fifty-third microstrip line TL 53 The other end is connected to the fifty-fourth microstrip line TL 54 One end and the tenth high electron mobility transistor HEMT 10 The gate connection; the fifty-fourth microstrip line TL 54 The other end of the resistor R 20 The 20th resistor R 20 The other end is connected to the 62nd capacitor C 62 One end and the third gate voltage V g3 Connection: the sixty-second capacitor C 62 The other end of the tenth high electron mobility transistor HEMT is grounded; 10 The source of the tenth high electron mobility transistor HEMT 10 The drain and the 55th microstrip line TL 55 The fifty-fifth microstrip line TL 55 The other end is connected to the fifty-sixth microstrip line TL 56 and the fifty-seventh microstrip line TL 57 The fifty-sixth microstrip line TL 56 The other end is connected to the sixty-third capacitor C 63 One end and the third drain voltage V d3 Connection: the sixty-third capacitor C 63 The other end of the fifty-seventh microstrip line TL 57 The other end of the capacitor C 64 One end of the sixty-fourth capacitor C 64 The other end serves as the output end of the low power amplifier.

8. The non-switching composite dual-mode large dynamic reconfigurable power amplifier according to claim 7, characterized in that: The output power of the high power amplifier is a target multiple of the output power of the low power amplifier.

9. An electronic device, characterized in that: A non-switching composite dual-mode large dynamic reconfigurable power amplifier comprising any one of claims 1 to 8.

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