Semiconductor optical integrated device and manufacturing method

Abstract

The semiconductor optical integrated element on one side generates laser light and outputs the laser light. The semiconductor optical integrated element includes a laser active layer, an optical modulation active layer, an optical amplification active layer, a first upper cladding layer, and a second upper cladding layer. The laser active layer generates laser light. The light modulation active layer and the laser active layer are arranged side by side, and the light modulation active layer outputs modulated laser light obtained by performing light modulation on laser light generated by the laser active layer. The light amplification active layer and the light modulation active layer are arranged side by side, and the light amplification active layer outputs amplified laser light obtained by amplifying the intensity of the modulated laser light output by the light modulation active layer. The first upper cladding layer has a first refractive index and is disposed on an upper surface of the laser active layer and an upper surface of the light modulation active layer. The second upper cladding layer has a second refractive index different from the first refractive index, is disposed side by side with the first upper cladding layer, and is disposed on the upper surface of the light amplification active layer. The amplified laser light output by the optical amplification active layer is shifted upward than the modulated laser light output by the optical modulation active layer and is output.

Description

Technical Field

[0001] The present invention relates to a semiconductor optical integrated element and a method for manufacturing the same, and more particularly to a semiconductor optical integrated element that uses a semiconductor to generate and output laser light and a method for manufacturing the same. Background Art

[0002] As one of the devices for optical communication, a semiconductor optical integrated device that generates laser light using a semiconductor and outputs the laser light is known. For example, a semiconductor optical integrated device that integrates a laser unit, an electric field absorption (EA: Electro Absorption) optical modulator, and a semiconductor optical amplifier (SOA: Semiconductor Optical Amplifier) ​​is known (for example, Patent Document 1, Patent Document 2).

[0003] In such a conventional semiconductor optical integrated device, the laser unit generates laser light according to the injected current. The EA modulator has a function of modulating by using the effect of changing the light absorption spectrum of the semiconductor layer according to the applied voltage, and generates modulated laser light obtained by modulating the laser light generated by the laser unit. The semiconductor optical amplifier has a function of increasing the light intensity by generating stimulated emission corresponding to the injected current, and generates amplified laser light obtained by amplifying the modulated laser light modulated by the EA modulator.

[0004] In such a conventional semiconductor optical integrated device, the laser part has, for example, the following structure: on an InP substrate also serving as a lower cladding layer, a lower SCH (Separate Confinement Heterostructure) layer, a multiple quantum well layer (MQW: Multiple Quantum Well), an upper SCH layer, a diffraction grating layer, and a semiconductor layer serving as an upper cladding layer are sequentially formed. In addition, in such a conventional semiconductor optical integrated device, the SOA part has, for example, the following structure: on an InP substrate also serving as a lower cladding layer, a lower SCH layer, a multiple quantum well layer, an upper SCH layer, and a semiconductor layer serving as an upper cladding layer are sequentially formed.

[0005] Prior art literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 6-53596

[0007] Patent document 2: WO2021 / 059447 Summary of the invention

[0008] However, with the popularization of optical communication technology, the output of semiconductor optical integrated devices is expected to be further increased.

[0009] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor optical integrated device capable of further increasing output.

[0010] The semiconductor optical integrated element involved in one aspect of the present invention generates and outputs laser light, and comprises a laser active layer, an optical modulation active layer, an optical amplification active layer, a first upper cladding layer, and a second upper cladding layer. The laser active layer generates laser light. The optical modulation active layer is arranged side by side with the laser active layer, and outputs modulated laser light obtained by optically modulating the laser light generated by the laser active layer. The optical amplification active layer is arranged side by side with the optical modulation active layer, and outputs amplified laser light obtained by amplifying the intensity of the modulated laser light output by the optical modulation active layer. The first upper cladding layer has a first refractive index, and is arranged on the upper surface of the laser active layer and the upper surface of the optical modulation active layer. The second upper cladding layer has a second refractive index different from the first refractive index, and is arranged side by side with the first upper cladding layer, and is arranged on the upper surface of the optical amplification active layer. The amplified laser light output by the optical amplification active layer is output while being shifted upward compared to the modulated laser light output by the optical modulation active layer.

[0011] A method for manufacturing a semiconductor optical integrated device that generates and outputs laser light according to one aspect of the present invention comprises a laser active layer configuration step, a light modulation active layer configuration step, a light amplification active layer configuration step, a first upper cladding layer configuration step, a material selection step, and a second upper cladding layer configuration step. In the laser active layer configuration step, a laser active layer that generates laser light is configured. In the light modulation active layer configuration step, a light modulation active layer that outputs modulated laser light obtained by optically modulating laser light generated by the laser active layer configured in the laser active layer configuration step is configured in parallel with the laser active layer. In the light amplification active layer configuration step, a light amplification active layer that outputs amplified laser light obtained by amplifying the intensity of modulated laser light output by the light modulation active layer configured in the light modulation active layer configuration step is configured in parallel with the light modulation active layer. In the first upper cladding layer configuration step, a first upper cladding layer having a first refractive index is configured on the upper surface of the laser active layer configured in the laser active layer configuration step and the upper surface of the light modulation active layer configured in the light modulation active layer configuration step. In the material selection step, a material having a second refractive index different from the first refractive index is selected. In the second upper cladding layer configuration step, a second upper cladding layer having a second refractive index is configured on an upper surface of the light amplifying active layer configured in the light amplifying active layer configuration step using the material selected in the material selection step.

[0012] According to one aspect of the present invention, a semiconductor optical integrated device capable of further increasing output can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a cross-sectional view schematically showing the semiconductor optical integrated device according to the first embodiment. DETAILED DESCRIPTION

[0014] Hereinafter, with reference to the accompanying drawings, embodiments of the semiconductor optical integrated device disclosed in the present application will be described in detail. Specifically, a semiconductor optical integrated device that generates and outputs laser light will be described. In addition, the embodiments shown below are only examples, and the present invention is not limited by these embodiments.

[0015] Implementation method 1.

[0016] Figure 1 FIG. 1 is a cross-sectional view schematically showing a semiconductor optical integrated device 1 according to Embodiment 1. The semiconductor optical integrated device 1 is a device that generates and outputs laser light. Figure 1 As shown, the semiconductor optical integrated element 1 includes a lower electrode 11, a semiconductor substrate 10, a lower cladding layer 100, a laser active layer 101, a light modulation active layer 111, a light amplification active layer 121, a first upper cladding layer 103, a second upper cladding layer 123, a laser active electrode 105, a light modulation electrode 115, a light amplification electrode 125, etc.

[0017] The lower electrode 11 is a plate-shaped electrode for supplying current between the laser active electrode 105, the light modulation electrode 115, and the light amplification electrode 125 described later. The lower electrode 11 is arranged so that the laser active layer 101, the light modulation active layer 111, and the light amplification active layer 121 described later are located between the lower electrode 11 and the laser active electrode 105, the light modulation electrode 115, and the light amplification electrode 125.

[0018] The semiconductor substrate 10 is a plate-shaped portion that functions as a substrate for arranging various elements. The semiconductor substrate 10 is arranged on the upper surface of the lower electrode 11. The semiconductor substrate 10 is made of, for example, indium phosphide (InP).

[0019] The lower cladding layer 100 is a semiconductor layer for making the laser active layer 101, the light modulation active layer 111, and the light amplification active layer 121 active. The lower cladding layer 100 is arranged on the upper surface of the semiconductor substrate 10. The lower cladding layer 100 is arranged to sandwich the laser active layer 101, the light modulation active layer 111, and the light amplification active layer 121 together with the first upper cladding layer 103 and the second upper cladding layer 123 described later. The lower cladding layer 100 has a lower cladding layer refractive index as a predetermined refractive index, and the lower cladding layer 100 is composed of, for example, InP.

[0020] The laser active layer 101 is a plate-shaped portion that generates laser light by oscillating at a predetermined wavelength by injecting a current supplied from the lower electrode 11 and the laser active electrode 105. The laser active layer 101 is disposed between the lower electrode 11 and the laser active electrode 105. The laser active layer 101 outputs the generated laser light to the light modulation active layer 111 described later. The laser active layer 101 is disposed on a portion of the upper surface of the lower cladding layer 100. The laser active layer 101 has a laser active layer refractive index that is a predetermined refractive index, and the laser active layer 101 is, for example, a semiconductor layer composed of AlGaInAs or InGaAsP of a quantum well structure (MQW), and is composed of a structure in which layers of different material ratios are stacked.

[0021] The light modulation active layer 111 is a plate-shaped portion that modulates light by changing the light absorption rate of the laser light generated and outputted from the laser active layer 101 by applying a voltage from the lower electrode 11 and the light modulation electrode 115, in order to carry signal information on the intensity of light, as adopted in the intensity modulation-direct detection (IM-DD) method in the optical communication system. The light modulation active layer 111 is arranged between the lower electrode 11 and the light modulation electrode 115. The light modulation active layer 111 outputs the modulated laser light, i.e., the modulated laser light, to the optical amplification active layer 121 described later. The light modulation active layer 111 has a light modulation active layer refractive index as a predetermined refractive index, and the light modulation active layer 111 is, for example, a semiconductor layer composed of AlGaInAs or InGaAsP of a quantum well structure, and is composed of a structure in which layers of different material ratios are stacked.

[0022] The optical amplification active layer 121 is a plate-shaped portion that amplifies the intensity of the modulated laser light modulated and output by the optical modulation active layer 111 by injecting a current supplied from the lower electrode 11 and the optical amplification electrode 125 in order to compensate for the loss during the transmission of the optical signal in the optical communication system. The optical amplification active layer 121 is arranged between the lower electrode 11 and the optical amplification electrode 125. The optical amplification active layer 121 outputs the modulated laser light after the intensity is amplified, that is, the amplified laser light to the outside. The optical amplification active layer 121 has a predetermined refractive index of the optical amplification active layer, and is a semiconductor layer composed of, for example, AlGaInAs or InGaAsP of a quantum well structure, and has a structure in which layers of different material ratios are stacked.

[0023] The first upper cladding layer 103 is a semiconductor layer disposed at a position sandwiching the laser active layer 101 and the light modulating active layer 111 together with the lower cladding layer 100. Figure 1As described above, the first upper cladding layer 103 is arranged to cover the laser active layer 101 and the light modulation active layer 111. The first upper cladding layer 103 has the following functions: by being arranged together with the lower cladding layer 100, the laser active layer 101 has laser activity and the light modulation active layer 111 has light modulation activity. The first upper cladding layer 103 has a first refractive index as a predetermined refractive index, and the first upper cladding layer 103 is composed of, for example, InP.

[0024] The second upper cladding layer 123 is a semiconductor layer disposed at a position sandwiching the light amplifying active layer 121 together with the lower cladding layer 100. Figure 1 As described above, the second upper cladding layer 123 is disposed adjacent to the first upper cladding layer 103 so as to cover the light amplification active layer 121 without covering the laser active layer 101 and the light modulation active layer 111. The second upper cladding layer 123 has the following function: by being disposed together with the lower cladding layer 100, the light amplification active layer 121 has a light amplification activity, and the light amplification active layer 121 has a light amplification activity. The second upper cladding layer 123 has a second refractive index that is a predetermined refractive index, and is composed of, for example, InGaAsP or AlGaInAs.

[0025] The lower cladding layer refractive index of the lower cladding layer 100 and the first upper cladding layer 103 are both configured to be lower than the refractive index of the laser active layer 101, that is, the laser active layer refractive index. With such a configuration, it is possible to suppress the laser light output from the laser active layer 101 from diffusing to the lower cladding layer 100 or the first upper cladding layer 103. Therefore, the laser light output from the laser active layer 101 can be output to the light modulation active layer 111 more efficiently.

[0026] The lower cladding layer refractive index of the lower cladding layer 100 and the first upper cladding layer 103 are both configured to be lower than the refractive index of the optical modulator active layer 111, that is, the optical modulation refractive index. With this configuration, it is possible to suppress the modulated laser light modulated and output by the optical modulator active layer 111 from diffusing to the lower cladding layer 100 or the first upper cladding layer 103. Therefore, the modulated laser light output by the optical modulator active layer 111 can be output to the optical amplifier active layer 121 more efficiently.

[0027] In the semiconductor optical integrated device 1 involved in the present embodiment 1, the refractive index of the laser active layer is configured to be greater than the refractive index of the light modulating active layer in consideration of light absorption caused by the semiconductor, etc. With such a structure, it is possible to maintain a good balance between the light output and the light ON / OFF characteristics (extinction ratio) of the light in the light modulator.

[0028] In the semiconductor optical integrated element 1 involved in the present embodiment 1, an example is described in which the laser active layer refractive index is configured to be greater than the light modulating active layer refractive index in consideration of the absorption of light caused by the semiconductor. However, the present disclosure is not limited to this example. It is also possible to configure the laser active layer refractive index and the light modulating active layer refractive index to be substantially the same. In the case where the laser active layer refractive index and the light modulating active layer refractive index are configured to be substantially the same, light absorption occurs by applying a relatively small bias to the light modulator, and the driving voltage of the modulator can be reduced.

[0029] The lower cladding layer refractive index of the lower cladding layer 100 and the second refractive index of the second upper cladding layer 123 are both configured to be lower than the refractive index of the light amplification active layer 121, that is, the light amplification refractive index. With this configuration, it is possible to suppress the light amplification laser light output by the light amplification active layer 121 from diffusing toward the lower cladding layer 100 or the second upper cladding layer 123. Therefore, the light amplification laser light output by the light amplification active layer 121 can be output to the outside of the semiconductor optical integrated device 1 more efficiently.

[0030] The first refractive index of the first upper cladding layer 103 is configured to be lower than the second refractive index of the second upper cladding layer 123. Therefore, the optical amplification laser light propagating in the optical amplifier active layer 121 is also easily propagated into the second upper cladding layer 123, which is an upper layer, compared with the laser active layer 101 and the optical modulator active layer 111. Therefore, the semiconductor optical integrated device 1 can output the optical amplification laser light whose light intensity center position is further shifted to the side opposite to the lower cladding layer 100 compared with the laser light propagating in the laser active layer 101 and the modulated laser light propagating in the optical modulator active layer 111, in other words, the optical amplification laser light whose light intensity center position is further shifted to the second upper cladding layer 123 side, which is the side opposite to the lower cladding layer 100, to the outside of the semiconductor optical integrated device 1. Therefore, the semiconductor optical integrated device 1 capable of further increasing the output can be provided.

[0031] In the optical amplifier active layer 121, as light propagates, the light is amplified due to stimulated emission, and the total amount of light increases. Light has the property of propagating in a layer with a high refractive index. Since the refractive index of the second upper cladding layer 123 is higher than that of the first upper cladding layer 103, the distribution of light propagating in the optical amplifier spreads toward the second upper cladding layer 123 as it propagates. Stimulated emission occurring in the optical amplifier active layer 121 is caused by the light density in the optical amplifier active layer 121 and the amount of injected carriers. However, when the light density propagating in the active layer is too high relative to the amount of injected carriers, stimulated emission does not occur, and the amplification gain per unit length is saturated. Here, according to this embodiment, since part of the light propagates in the second upper cladding layer 123, the light density in the optical amplifier active layer 121 can be kept low. Therefore, stimulated emission continues to occur, light is continuously amplified, and thus the output of the semiconductor optical integrated device can be increased. Therefore, a semiconductor optical integrated device 1 capable of further increasing the output can be provided.

[0032] The laser active electrode 105 is a plate-shaped electrode for supplying current between the lower electrode 11. The laser active electrode 105 is arranged so that the lower cladding layer 100, the laser active layer 101 stacked on the lower cladding layer 100, and the first upper cladding layer 103 stacked on the laser active layer 101 are located between the laser active electrode 105 and the lower electrode 11.

[0033] The light modulating electrode 115 is a plate-shaped electrode for supplying current between the lower electrode 11. The light modulating electrode 115 is arranged so that the lower cladding layer 100, the light modulating active layer 111 stacked on the lower cladding layer 100, and the first upper cladding layer 103 stacked on the light modulating active layer 111 are located between the light modulating electrode 115 and the lower electrode 11.

[0034] The optical amplifier electrode 125 is a plate-shaped electrode for supplying current between the lower electrode 11. The optical amplifier electrode 125 is arranged such that the lower cladding layer 100, the optical amplifier active layer 121 stacked on the lower cladding layer 100, and the second upper cladding layer 123 stacked on the optical amplifier active layer 121 are located between the optical amplifier electrode 125 and the lower electrode 11. Figure 1 As described, the light modulation electrode 115 is arranged between the light amplification electrode 125 and the laser active electrode 105 .

[0035] In the semiconductor optical integrated device 1 according to the first embodiment, in order to prevent the mode of light from being associated with the laser active electrode 105 and the light modulating electrode 115 having a large light absorption coefficient, the first upper cladding layer 103 is formed of, for example, n-type InP having a thickness of 2.5 μm. On the other hand, in order to prevent the mode of light from being associated with the light amplifying electrode 125 having a large light absorption coefficient, the second upper cladding layer 123 is formed of, for example, n-type InGaAsP or AlGaInAs having a thickness of 2.5 μm. By using such a combination, the light absorption caused by the electrodes is suppressed, and a high light output can be generated.

[0036] In another example of the semiconductor optical integrated element 1, the second upper cladding layer 123 may also be a laminated structure with a high refractive index semiconductor layer 151 using a mixed crystalline semiconductor such as n-type InP and n-type InGaAsP or n-type AlGaInAs having a higher refractive index than n-type InP. For example, the second upper cladding layer 123 may also be a structure in which n-type InP with a thickness of 0.4 μm, n-type InGaAsP with a thickness of 2.0 μm as a high refractive index semiconductor layer, and n-type InP with a thickness of 0.1 μm are laminated in this order from the semiconductor substrate side. By arranging an n-type InP layer with a thickness of 0.4 μm between the optical amplifier active layer 121 and the high refractive index semiconductor layer, when light in the waveguide is transferred from the region where the first upper cladding layer 103 is formed to the region where the second upper cladding layer 123 is formed, light loss due to a sudden change in the light mode can be suppressed. With such a structure, the refractive index of the second upper cladding layer 123 becomes higher than that of the first upper cladding layer 103, and the mode center of the light guided in the optical amplifier unit 40 is shifted upward compared to the mode center of the light guided in the laser unit 20. Therefore, a part of the light is transmitted in the second upper cladding layer 123, and the light density in the optical amplifier active layer 121 can be kept low, and stimulated emission can continue to occur and light amplification can continue. Therefore, a semiconductor optical integrated device 1 capable of further increasing output can be provided.

[0037] The semiconductor optical integrated device 1 according to one aspect of the present invention generates and outputs laser light as described above, and includes a laser active layer 101, a light modulation active layer 111, a light amplification active layer 121, a first upper cladding layer 103, and a second upper cladding layer 123. The laser active layer 101 generates laser light. The light modulation active layer 111 is as shown in FIG. Figure 1 As shown, the optical amplification active layer 121 is arranged side by side with the laser active layer 101, and outputs modulated laser light obtained by optically modulating the laser light generated by the laser active layer 101. Figure 1 As shown, the first upper cladding layer 103 is arranged side by side with the light modulation active layer 111, and outputs an amplified laser light obtained by amplifying the intensity of the modulated laser light output by the light modulation active layer 111. The first upper cladding layer 103 has a first refractive index, such as Figure 1 The second upper cladding layer 123 has a second refractive index different from the first refractive index. Figure 1 As shown, the second upper cladding layer 123 is arranged side by side with the first upper cladding layer 103 and is disposed on the upper surface of the optical amplification active layer 121. The amplified laser light outputted by the optical amplification active layer 121 is shifted upward compared to the modulated laser light outputted by the optical modulation active layer 111 and is outputted. Therefore, a part of the light is transmitted in the second upper cladding layer 123, and the light density in the optical amplifier active layer 121 can be kept low, and stimulated emission can continue to occur and light can be continuously amplified. Therefore, a semiconductor optical integrated device 1 capable of further increasing output can be provided.

[0038] In the semiconductor optical integrated element 1 according to one aspect of the present invention, the first refractive index is lower than the second refractive index as described above. The amplified laser light outputted from the optical amplification active layer 121 is shifted and outputted toward the second upper cladding layer 123 having a second refractive index higher than the first refractive index, compared to the modulated laser light outputted from the optical modulation active layer 111. Therefore, a part of the light is transmitted in the second upper cladding layer 123, and the light density in the optical amplifier active layer 121 can be kept low, so that stimulated emission can continue to occur and light can be continuously amplified. Therefore, a semiconductor optical integrated element 1 capable of further increasing output can be provided.

[0039] In the semiconductor optical integrated element 1 according to one aspect of the present invention, as described above, the laser active layer 101 has a laser active layer refractive index higher than the first refractive index. The light modulation active layer 111 has a light modulation active layer refractive index higher than the first refractive index. The light amplification active layer 121 has a light amplification active layer refractive index higher than the second refractive index. Therefore, the semiconductor optical integrated element 1 has a function of allowing light to efficiently propagate to the laser active layer 101, the light amplifier active layer 121, and the inside of the light amplification active layer 121. Therefore, a semiconductor optical integrated element 1 capable of further increasing output can be provided.

[0040] In the semiconductor optical integrated device 1 according to one aspect of the present invention, as described above, the refractive index of the laser active layer is equal to or higher than the refractive index of the light modulation active layer. Therefore, a semiconductor optical integrated device 1 capable of further increasing output can be provided.

[0041] The semiconductor optical integrated element 1 can be manufactured by the following method. The lower electrode 11 is arranged. The semiconductor substrate 10 is arranged on the upper surface of the arranged lower electrode 11. The laser active layer 101, the light modulation active layer 111, and the light amplification active layer 121 are arranged side by side on the upper surface of the arranged semiconductor substrate 10. The first upper cladding layer 103 to be arranged on the upper surface of the laser active layer 101 and the light modulation active layer 111 is arranged. A material having a higher refractive index than the arranged first upper cladding layer 103 is selected. The second upper cladding layer 123 using the selected material is arranged on the upper surface of the light amplification active layer 121. The laser active electrode 105 and the light modulation electrode 115 are arranged side by side on the upper surface of the arranged first upper cladding layer 103. The light amplification electrode 125 is arranged on the upper surface of the second upper cladding layer 123 using a material selected to have a higher refractive index than the first upper cladding layer 103. With such a structure, the refractive index of the second upper cladding layer 123 becomes higher than that of the first upper cladding layer 103, and the mode center of the light guided in the optical amplifier unit 40 is shifted upward compared to the mode center of the light guided in the laser unit 20. Therefore, a part of the light is transmitted in the second upper cladding layer 123, and the light density in the optical amplifier active layer 121 can be kept low, so that stimulated emission can continue to occur and light can be continuously amplified. Therefore, a semiconductor optical integrated device 1 capable of further increasing output can be provided.

[0042] A manufacturing method according to one aspect of the present invention manufactures Figure 1The semiconductor optical integrated element 1 shown generates and outputs laser light. The manufacturing method of the semiconductor optical integrated element 1 comprises: a laser active layer configuration step of configuring the laser active layer 101 that generates laser light; a light modulation active layer configuration step of configuring the light modulation active layer 121 that outputs modulated laser light obtained by optically modulating the laser light generated by the laser active layer 101 configured in the laser active layer configuration step in parallel with the laser active layer 101; and a light amplification active layer configuration step of configuring the light amplification active layer 121 that outputs amplified laser light obtained by amplifying the intensity of the modulated laser light output by the light modulation active layer 121 configured in the light modulation active layer configuration step in parallel with the light modulation active layer 121. The invention relates to a semiconductor optical integrated device 1, wherein the semiconductor optical integrated device 1 comprises a first upper cladding layer 103 having a first refractive index, a first upper cladding layer 103 having a first refractive index, and a first upper cladding layer 103 having a first refractive index. The first upper cladding layer 103 has a first refractive index, and a second upper cladding layer 103 has a second refractive index. The first upper cladding layer 103 has a first refractive index, and a second upper cladding layer 103 has a second refractive index. The second upper cladding layer 103 has a second ...

[0043] In the manufacturing method according to one aspect of the present invention, the second refractive index of the material selected in the material selection step is higher than the first refractive index, and the semiconductor optical integrated device 1 is manufactured in such a manner that the amplified laser light outputted from the optical amplification active layer 125 is shifted and outputted in the direction of the second upper cladding layer 123 having a second refractive index higher than the first refractive index compared with the modulated laser light outputted from the optical modulation active layer 121. Therefore, in the manufactured semiconductor optical integrated device 1, part of the light is transmitted in the second upper cladding layer 123, the light density in the optical amplifier active layer 121 can be kept low, and stimulated emission can continue to occur and light can continue to be amplified. Therefore, a semiconductor optical integrated device 1 capable of further increasing the output can be provided.

[0044] In the manufacturing method according to one aspect of the present invention, a material having a laser active layer refractive index higher than the first refractive index is selected as the laser active layer 101, a material having a light modulation active layer refractive index higher than the first refractive index is selected as the light modulation active layer 121, and a material having a light amplification active layer refractive index higher than the second refractive index is selected as the light amplification active layer 125. Therefore, the manufactured semiconductor optical integrated device 1 has a function of efficiently propagating light into the laser active layer 101, the light amplifier active layer 121, and the inside of the light amplification active layer 125. Therefore, a semiconductor optical integrated device 1 capable of further increasing output can be provided.

[0045] In the manufacturing method according to one aspect of the present invention, materials having a refractive index of the laser active layer greater than that of the light modulation active layer are selected as the laser active layer 101 and the light modulation active layer 121. Therefore, a semiconductor optical integrated device 1 having a further increased output can be provided.

[0046] Explanation of symbols

[0047] 1: semiconductor optical integrated element; 10: semiconductor substrate; 100: lower cladding layer; 101: laser active layer; 103: first upper cladding layer; 105: laser active electrode; 111: optical modulation active layer; 115: optical modulation electrode; 121: optical amplification active layer; 123: second upper cladding layer; 125: optical amplification electrode.

Claims

1. A semiconductor optical integrated component that generates and outputs laser light, characterized in that: have: A laser active layer for generating the laser; A light modulating active layer, arranged side by side with the laser active layer, outputs modulated laser light obtained by light modulating the laser light generated by the laser active layer; an optical amplification active layer, arranged side by side with the optical modulation active layer, and outputting an amplified laser light obtained by amplifying the intensity of the modulated laser light output by the optical modulation active layer; a first upper cladding layer having a first refractive index and disposed on the upper surface of the laser active layer and the upper surface of the light modulating active layer; as well as a second upper cladding layer having a second refractive index different from the first refractive index, arranged in parallel with the first upper cladding layer and disposed on the upper surface of the optical amplification active layer; The amplified laser light outputted from the optical amplification active layer is outputted while being shifted upward compared to the modulated laser light outputted from the optical modulation active layer.

2. The semiconductor optical integrated component according to claim 1, characterized in that: The first refractive index is lower than the second refractive index, The amplified laser light outputted from the optical amplification active layer is outputted while being shifted toward the second upper cladding layer having the second refractive index higher than the first refractive index, compared to the modulated laser light outputted from the optical modulation active layer.

3. The semiconductor optical integrated component according to claim 1 or 2, characterized in that: The laser active layer has a laser active layer refractive index higher than the first refractive index, The light modulating active layer has a light modulating active layer refractive index higher than the first refractive index, The light-amplifying active layer has a light-amplifying active layer refractive index higher than the second refractive index.

4. The semiconductor optical integrated component according to claim 3, characterized in that: The refractive index of the laser active layer is greater than or equal to the refractive index of the light modulation active layer.

5. A method for manufacturing a semiconductor optical integrated element that generates and outputs laser light, characterized in that: have: a laser active layer configuration step, configuring a laser active layer for generating the laser; a light modulation active layer configuration step of configuring a light modulation active layer which is arranged side by side with the laser active layer and outputs modulated laser light obtained by optically modulating the laser light generated by the laser active layer configured in the laser active layer configuration step; a light amplification active layer configuration step of configuring, in parallel with the light modulation active layer, a light amplification active layer for outputting amplified laser light obtained by amplifying the intensity of the modulated laser light outputted by the light modulation active layer configured in the light modulation active layer configuration step; a first upper cladding layer configuration step of configuring a first upper cladding layer having a first refractive index on an upper surface of the laser active layer configured in the laser active layer configuration step and an upper surface of the light modulating active layer configured in the light modulating active layer configuration step; A material selection step of selecting a material having a second refractive index different from the first refractive index; as well as The second upper cladding layer disposing step is to dispose a second upper cladding layer having the second refractive index on the upper surface of the light amplifying active layer disposed in the light amplifying active layer disposing step, using the material selected in the material selecting step.

6. The manufacturing method according to claim 5, characterized in that: The second refractive index of the material selected in the material selection step is higher than the first refractive index, The semiconductor optical integrated device is manufactured so that the amplified laser light outputted from the optical amplification active layer is shifted and outputted toward the second upper cladding layer having the second refractive index higher than the first refractive index, compared with the modulated laser light outputted from the optical modulation active layer.

7. The manufacturing method according to claim 5 or 6, characterized in that: As the laser active layer, a material having a laser active layer refractive index higher than the first refractive index is selected. As the light modulating active layer, a material having a light modulating active layer refractive index higher than the first refractive index is selected. As the light-amplifying active layer, a material having a refractive index higher than the second refractive index is selected.

8. The semiconductor optical integrated component according to claim 7, characterized in that: As the laser active layer and the light modulation active layer, a material is selected whose refractive index of the laser active layer is equal to or higher than that of the light modulation active layer.

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