Method for manufacturing thin wiring member, thin wiring member, and method for manufacturing wiring board

Abstract

A method of manufacturing a plurality of thin wiring members is disclosed. The method for manufacturing a thin wiring member includes the steps of: preparing a first carrier; producing a wiring layer on the first carrier, the wiring layer having a plurality of wiring portions corresponding to the plurality of thin wiring members and an insulating portion around the plurality of wiring portions; forming a support layer harder than the insulating portion of the wiring layer; and singulating the wiring body including the wiring layer and the support layer so as to have at least one of the plurality of wiring portions, respectively.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a thin wiring component, a method for manufacturing a thin wiring component and a wiring substrate. Background Art

[0002] An example of a fan-out type semiconductor device is disclosed in Patent Document 1. In this semiconductor device, a redistribution layer is provided between a semiconductor chip and external connection terminals, and the terminal interval of the semiconductor chip is enlarged by the redistribution layer to connect to the external connection terminals.

[0003] Previous technical literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-029557 Summary of the invention

[0006] Technical issues to be solved by the invention

[0007] In the conventional method, a redistribution layer may be formed on a substrate, but due to reasons such as large height deviation of the substrate, it is sometimes difficult to perform fine wiring of the redistribution layer. Therefore, a method of making a redistribution layer composed of fine wiring on a flat glass carrier by pattern formation and transferring it has been studied. However, the redistribution layer is thin, for example, 50 μm, and is a component with adhesiveness or elasticity and unstable shape, and it is not easy to operate during transfer. More specifically, when a large number of redistribution layers are made on a glass carrier at one time, the individual redistribution layers need to be monolithic, but it is difficult to cut them with high precision at this time.

[0008] An object of the present invention is to provide a method for manufacturing a thin wiring component capable of accurately singulating a thin wiring component with unstable shape, and a method for manufacturing a thin wiring component and a wiring board.

[0009] Means for solving technical problems

[0010] As one aspect of the present invention, a method for manufacturing a thin wiring component is provided. The manufacturing method is a method for manufacturing a plurality of thin wiring components, and includes the following steps: preparing a first carrier; making a wiring layer on the first carrier, the wiring layer having a plurality of wiring portions corresponding to the plurality of thin wiring components and an insulating portion existing around the plurality of wiring portions; forming a supporting layer harder than the insulating portion of the wiring layer; and singulating a wiring body including the wiring layer and the supporting layer in a manner that each of the wiring bodies has at least one wiring portion among the plurality of wiring portions.

[0011] In the manufacturing method of the above-mentioned thin wiring component, a support layer that is harder than the insulating portion of the wiring layer is formed, and the wiring body including the wiring layer and the support layer is singulated in a manner that each of the wiring layers has at least one wiring portion among a plurality of wiring portions. In this case, it is possible to singulate in a state where the hard support layer supports the wiring layer whose shape is unstable. Therefore, according to this manufacturing method, a thin and shape-unstable wiring component can be singulated with high precision. In addition, in the case where the wiring layer is thin, the wiring layer may curl up due to impact during singulation (for example, cutting), but according to this manufacturing method, the support layer supports the wiring layer, so such curling can be suppressed. In addition, in the manufacturing method of the above-mentioned thin wiring component, in the singulation process, the wiring body can be singulated in a state where the support layer is attached to one side of the wiring layer.

[0012] In the manufacturing method of the thin wiring component, the wiring body may be cut into pieces by a blade from the support layer toward the wiring layer in the singulation step. In this case, since the cutting is performed from the hard support layer side, the wiring layer with unstable shape that is cut after the support layer can be cut with high precision by the blade, which can improve the cutting performance.

[0013] In the manufacturing method of the thin wiring component, the wiring body can be cut into pieces in the singulation step while the wiring layer is sandwiched between the first carrier and the support layer. In this case, since the wiring layer, which is unstable in shape, is cut while being sandwiched between the first carrier and the hard support layer and its movement is fixed, it can be cut with higher precision.

[0014] The manufacturing method of the above-mentioned thin wiring component may further include the following steps: attaching the monolithic wiring body to the adhesive film; removing the first carrier from the wiring body after attaching it to the adhesive film; and dividing the adhesive film to which the monolithic wiring body is attached. Regarding the dividing method, for example, a method of burning with a laser, a method of dividing with a blade, a method of dividing by expansion, etc. can be applied. In this manufacturing method, in the attaching step, the adhesive film may be attached to the supporting layer of the wiring body, and in the dividing step, the adhesive film may be divided along the cutting area in the supporting layer. In this case, it is possible to suppress the wiring layer whose shape is unstable due to the breaking of the adhesive film during the division, such as being stretched and deteriorating the dimensional accuracy. Therefore, according to this manufacturing method, the dimensional accuracy of the thin wiring component can be maintained at a high level.

[0015] In the manufacturing method of the thin wiring component, in the step of forming the supporting layer, the supporting layer may be formed on the first carrier, and in the step of manufacturing the wiring layer, the wiring layer may be manufactured on the supporting layer. In this case, the wiring layer with unstable shape can be fixed more reliably by the hard supporting layer to be singulated. Therefore, according to this manufacturing method, it is possible to singulate with high precision.

[0016] In the manufacturing method of the above-mentioned thin wiring component, in the singulation process, the wiring body can be singulated by cutting it from the wiring layer toward the supporting layer with a blade. In this case, although cutting is performed from the wiring layer, the wiring layer is firmly supported by the hard supporting layer on the opposite side surface, so it can be cut in a state where the wiring layer is fixed to a certain extent. Therefore, according to this manufacturing method, thin and unstable wiring components can be cut with high precision. In addition, in the case where the wiring layer is thin, it is assumed that the wiring layer is rolled up due to the water pressure during cutting, but by providing a supporting layer under the wiring layer, such rolling up can be suppressed.

[0017] The manufacturing method of the above-mentioned thin wiring component may include the following steps: attaching a second carrier to the surface of the wiring layer and opposite to the surface to which the supporting layer is attached; removing the first carrier after attaching the second carrier; and attaching the wiring body to which the second carrier is attached to the adhesive film. In the singulation step, after being attached to the adhesive film, the wiring layer, the supporting layer and the adhesive film may be cut to singulate them. In this case, the first carrier to which the supporting layer is attached can be removed, so the supporting layer can be removed by etching or the like. In addition, since the adhesive film is cut, there is no need to expand it, and the deterioration of the dimensional accuracy of the wiring layer accompanying the breakage of the adhesive film when the adhesive film is expanded can be prevented.

[0018] The manufacturing method of the thin wiring component may further include a step of removing the second carrier, and in the singulation step, after the second carrier is removed, the wiring layer, the support layer and the adhesive film are cut to singulate. In this case, it is not necessary to cut the second carrier, so the material of the second carrier can be selected more freely. In addition, since it is not necessary to cut the second carrier, the cutting speed can be increased, and the manufacturing efficiency can be improved.

[0019] In the manufacturing method of the thin wiring component, the second carrier, the wiring layer, the support layer and the adhesive film may be cut into individual pieces in the singulation step. In this case, the wiring layer, which is unstable in shape, is sandwiched between the second carrier and the hard support layer to be cut in a fixed state, so that the cutting can be performed with high precision.

[0020] In the above-mentioned method for manufacturing a thin wiring component, the thickness of the wiring layer can be 200 μm or less. In this case, the thickness of the thin wiring component can be thinned more reliably. Moreover, even if the thickness of the wiring layer is 200 μm or less, according to any of the above-mentioned manufacturing methods, a wiring body having a wiring layer with unstable shape can be singulated with high precision.

[0021] In the above-mentioned method for manufacturing a thin wiring component, the thickness of the support layer may be greater than 25% and less than 3000% of the thickness of the wiring layer. When the thickness of the support layer is greater than 25% of the thickness of the wiring layer, the wiring layer having an unstable shape can be firmly supported by the support layer and can be singulated with high precision. Furthermore, when the thickness of the support layer is less than 3000% of the thickness of the wiring layer, the thickness of the thin wiring component can be kept thin without increasing.

[0022] In the manufacturing method of the thin wiring component, the support layer can be formed of a material having a bending elastic modulus of 3 GPa or more (or a bending strength of 700 MPa or more). In this case, the wiring layer having an unstable shape can be reliably supported by the hard support layer during the monolithicization. Therefore, according to the manufacturing method, the monolithicization can be performed with high precision.

[0023] In the manufacturing method of the above-mentioned thin wiring component, the supporting layer may include a thermosetting resin layer containing an inorganic filler. In this case, the self-sharpening effect of the blade can be exerted by the inorganic filler. In this case, the content of the inorganic filler in the thermosetting resin layer is preferably 40% by mass or more and 90% by mass or less. Thus, the supporting property and cutting property of the wiring layer can be combined. In addition, the average particle size of the inorganic filler is preferably 0.05 μm or more, and more preferably 0.1 μm or more.

[0024] In the method for manufacturing the thin wiring member, the first carrier may be a glass carrier having an arithmetic mean roughness of 50 nm or less. In this case, the wiring layer formed on the first carrier can be micronized with high precision.

[0025] In the method for manufacturing the thin wiring member, the wiring layer may include wirings having a line width of 5 μm or less. In this case, a thin wiring member having fine wirings can be obtained.

[0026] Another aspect of the present invention is a thin wiring component. The thin wiring component comprises: a wiring layer having wiring and a resin composition or a cured product thereof around the wiring; and a support layer provided on one surface of the wiring layer. In the thin wiring component, the support layer is formed of a material harder than the resin composition or the cured product thereof of the wiring layer.

[0027] The thin wiring component has a support layer formed of a material harder than the resin composition or cured product thereof of the wiring layer. In this case, the thin wiring component can be prevented from warping or curling when the thin wiring component is used to make a wiring substrate or a semiconductor device, and the shape can be stabilized.

[0028] In the thin wiring component, the wiring layer may have a thickness of 200 μm or less, the support layer may have a thickness of 50 μm or more and 1200 μm or less, and the wiring layer may have wiring with a line width of 5 μm. In this case, a thin wiring component having fine wiring can be obtained.

[0029] In the thin wiring member, the support layer may be formed of a material having a bending modulus of 3 GPa or more (or a bending strength of 700 MPa or more). In this case, the thin wiring member can be more reliably prevented from warping or curling, and the shape can be stabilized.

[0030] In the above-mentioned thin wiring component, the support layer may include a thermosetting resin layer containing an inorganic filler. In this case, the content of the inorganic filler in the thermosetting resin layer may be 40% by mass or more and 90% by mass or less. In this case, the support property and the cutting property of the wiring layer can be combined.

[0031] In addition, as another aspect of the present invention, there is provided a method for manufacturing a wiring substrate, comprising the steps of: preparing a thin wiring component manufactured by any of the above-mentioned methods for manufacturing a thin wiring component; arranging the thin wiring component on or in a substrate; and connecting the wiring of the thin wiring component to a connection terminal.

[0032] Effects of the Invention

[0033] According to the present invention, a wiring component that is thin and unstable in shape can be individually formed with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a cross-sectional view showing an example of a thin wiring component.

[0035] Figure 2 middle, Figure 2 (a) to (c) represent Figure 1 A diagram showing a method for manufacturing a thin wiring component.

[0036] Figure 3 middle, Figure 3 (a) to (c) represent Figure 1 The method of manufacturing the thin wiring component is shown in FIG. Figure 2 The process performed after the process.

[0037] Figure 4 middle, Figure 4 (a) to (c) represent Figure 1 The method of manufacturing the thin wiring component is shown in FIG. Figure 3 The process performed after the process.

[0038] Figure 5 middle, Figure 5 (a) to (c) are diagrams sequentially showing a method of manufacturing a wiring board using a thin wiring member.

[0039] Figure 6 middle, Figure 6 (a) to (c) represent Figure 1 FIG. 2 is a diagram showing another method of manufacturing a thin wiring component.

[0040] Figure 7 middle, Figure 7 (a) to (c) represent Figure 1 Another method of manufacturing a thin wiring component is shown in FIG. Figure 6 The process performed after the process.

[0041] Figure 8 middle, Figure 8 (a) to (c) represent Figure 1 Another method of manufacturing a thin wiring component is shown in FIG. Figure 7 The process performed after the process.

[0042] Fig. 9 middle, Fig. 9 (a) to (c) represent Figure 1 FIG. 1 is a diagram of another method for manufacturing a thin wiring component shown in FIG. Figure 7 The process performed after the process.

[0043] Fig.10 middle, Fig.10 (a) to (d) are diagrams sequentially showing another method of manufacturing a wiring board using a thin wiring component. DETAILED DESCRIPTION

[0044] Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. In the following description, the same or equivalent parts are marked with the same symbols, and repeated descriptions are omitted. In addition, unless otherwise specified, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the accompanying drawings. Furthermore, the dimensional ratios of the accompanying drawings are not limited to the ratios shown in the drawings.

[0045] In the present specification and claims, when the terms "left", "right", "front", "back", "up", "down", "above", "below", "first", "second" and the like are used, these are intended for explanation and do not necessarily mean that they are permanently in this relative position. Furthermore, the term "layer" includes not only structures of shapes formed on the entire surface when viewed from above, but also structures of shapes formed locally. Furthermore, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes as long as the desired purpose of the process is achieved. Furthermore, the numerical range expressed by "to" indicates a range that includes the numerical values ​​recorded before and after the "to" as the minimum and maximum values, respectively. Furthermore, within the numerical range recorded in stages in the present specification, the upper limit or lower limit of the numerical range of a certain stage can be replaced by the upper limit or lower limit of the numerical range of other stages.

[0046] [Structure of thin wiring components]

[0047] Figure 1 FIG. 2 is a cross-sectional view showing an example of a thin wiring component. Figure 1 As shown, the thin wiring component 1 is, for example, a component used for constituting a redistribution layer (RDL) of a wiring portion of a wiring substrate 200 described later (see FIG. 2 ). Figure 5 ). However, the thin wiring component 1 can be used for wiring or its connection in semiconductor devices, etc. The thin wiring component 1 includes a fine wiring layer 10, a supporting layer 20 and an adhesive layer 30. The thin wiring component 1 is a tiny wiring component that can be built into various wiring substrates or semiconductor devices, etc., and can have a rectangular shape of 50 mm in length × 50 mm in width when viewed from above, or a rectangular shape of 20 mm in length × 20 mm in width. Furthermore, the thin wiring component 1 is a thin wiring component, including a fine wiring layer 10 having a thickness of about 50 μm, and the overall thickness is thin, for example, 30 μm to 1 mm. In addition, the thickness of the fine wiring layer 10 is, for example, less than 200 μm. Since the thin wiring component 1 has such a thickness, it has characteristics such as easy curling and difficult handling.

[0048] The fine wiring layer 10 is formed by arranging a copper wiring 14 (wiring) having a three-dimensional wiring structure in an insulating layer 12 (insulating portion). The copper wiring 14 is, for example, a wiring having a fine line width of 0.5 to 5 μm. The copper wiring 14 preferably has a fine line width of 0.7 to 4 μm, and more preferably has a fine line width of 1 to 3 μm. The connection end 14a of the copper wiring 14 is exposed to the outside from the first surface 10a of the fine wiring layer 10. The connection end 14a of the copper wiring 14 is electrically and mechanically connected to the connection terminal. The second surface 10b of the fine wiring layer 10 is bonded and fixed to the first surface 20a of the supporting layer 20. The copper wiring 14 forms a three-dimensional wiring layer by stacking each wiring layer in sequence from the second surface 10b toward the first surface 10a as described later.

[0049] The insulating layer 12 is formed by stacking a plurality of layers, and each layer may have a thickness of 10 μm or less, or 5 μm or less, for example, in terms of forming fine via holes and grooves. The insulating layer 12 is formed in a manner that fills the periphery of the copper wiring 14 and exists around the copper wiring 14. On the other hand, from the perspective of electrical reliability, each layer of the insulating layer 12 may have a thickness of 1 μm or more. The thickness of the insulating layer 12 as a whole may be 10 to 200 μm, or 10 to 100 μm. In addition, from the perspective of suppressing warpage, the insulating layer 12 may have a thermal expansion coefficient of, for example, 80 ppm / °C or less (after curing). From the perspective of suppressing peeling or cracking in the reflow process and the temperature cycle test, the insulating layer 12 may have a thermal expansion coefficient of, for example, 70 ppm / °C or less (after curing). On the other hand, from the perspective of improving stress relaxation to form fine via holes or grooves, the insulating layer 12 may have a linear expansion coefficient of 20 ppm / °C or more (after curing). In addition, the linear expansion coefficient of the insulating layer 12 may be the same as the linear expansion coefficient of the supporting layer 20 , or may be smaller or larger than the linear expansion coefficient of the supporting layer 20 .

[0050] Such an insulating layer 12 is composed of materials such as polyimide resin, maleimide resin, epoxy resin, phenoxy resin, polybenzoxazole resin, acrylic resin, acrylate resin, etc. In addition, the insulating layer 12 may contain fillers. From the perspective of being able to form fine details, the average particle size of the fillers contained may be 500nm or less. The insulating layer 12 may contain fillers in a manner such that the content of the fillers is less than 1% by mass relative to the total amount of the insulating material. The insulating layer 12 may not contain fillers. In addition, the insulating layer 12 is formed of the above-mentioned materials, becomes a layer having adhesiveness and elasticity, and is formed as a shape-unstable component.

[0051] The support layer 20 is a layer that supports the fine wiring layer 10 including such an unstable component, namely the insulating layer 12, and is composed of a material harder than the resin composition of the insulating layer 12 or its cured product. More specifically, the support layer 20 is formed of a material having a bending elastic modulus of 3 GPa or more (or a bending strength of 700 MPa or more). The thickness of the support layer 20 may be thinner than the fine wiring layer 10, or conversely, thicker than the fine wiring layer 10. For example, the thickness of the support layer 20 relative to the fine wiring layer 10 may be 25 to 3000%. In addition, the support layer 20 may be formed of a resin molded body filled with a filler, and the filling rate of the filler may be 50 to 55% by mass, or may be 80% or more by mass. The filler cross-sectional diameter of the filled filler may be 20 μm or more. Furthermore, the support layer 20 may be a resin sheet having glass cloth, or a resin sheet having a hard layer (a layer containing silicon, carbon, or copper) on the surface. In addition, the thermal expansion coefficient of the support layer 20 may be 5 to 50 ppm / °C. Since the supporting layer 20 has such a thermal expansion coefficient, warping and the like can be suppressed.

[0052] The support layer 20 can be more specifically formed by a thermosetting resin layer containing an inorganic filler. The content of the inorganic filler in the thermosetting resin layer constituting the support layer 20 can be 40 to 90% by mass. The average particle size of the inorganic filler can be, for example, 0.05 μm or more. The average particle size described herein is, for example, a value calculated by SEM. The thermosetting resin layer is a layer formed by a thermosetting resin composition containing a thermosetting resin and an inorganic filler, and the thermosetting resin contained in the thermosetting resin composition can be one or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives. One or more selected from the group consisting of maleimide resins having one or more N-substituted maleimide groups and their derivatives can be a resin comprising a structure derived from a maleimide resin having two or more N-substituted maleimide groups and a structure derived from a silicone compound having a primary amino group.

[0053] The support layer 20 may also include a second thermosetting resin layer containing a rubber component in addition to the above-mentioned thermosetting resin layer. The second thermosetting resin layer is a layer formed by a second thermosetting resin composition containing a thermosetting resin and a rubber component, and the thermosetting resin contained in the second thermosetting resin composition may be an epoxy resin. In addition, the second thermosetting resin composition may also contain a phenolic resin-based curing agent. In addition, the rubber component may be cross-linked rubber particles. The content of the inorganic filler in the second thermosetting resin layer may be 0 to 20% by mass, or 0 to 5% by mass.

[0054] The adhesive layer 30 is a layer used to mount the thin wiring component 1 on a predetermined location such as a wiring substrate. The adhesive layer 30 is formed of epoxy resin or the like, for example, a mixed resin such as epoxy resin and acrylic rubber and a filler. The thickness of the adhesive layer 30 is, for example, 5 to 40 μm. The adhesive layer 30 is, for example, composed of a die attach film (DAF) or the like. The adhesive layer can be integrally formed on a dicing tape having an adhesive layer. The adhesive layer can, for example, contain an ultraviolet curable resin.

[0055] [Method for manufacturing thin wiring component]

[0056] Next, refer to Figure 2 to Figure 4 , a method for manufacturing the thin wiring component 1 will be described. Figure 2 to Figure 4 It means in sequence Figure 1 FIG. 1 is a diagram showing a method for manufacturing a thin wiring component. Figure 2 As shown in (a), first, prepare a glass carrier 100 (first carrier). The glass carrier 100 is, for example, a carrier substrate with a thickness of 0.7 mm and a flatness with an arithmetic mean roughness of less than 50 nm. The glass carrier 100 is, for example, in the shape of a wafer or a panel, and is not particularly limited. For example, it can be a circular wafer with a diameter of 200 mm, a diameter of 300 mm, or a diameter of 450 mm, or a rectangular panel with a side of less than 200 to 700 mm. A temporary fixing material 101 is attached to such a glass carrier 100. The temporary fixing material 101 is a resin layer used to temporarily fix an object on the glass carrier 100, and is configured to be able to peel off the object temporarily fixed by heating or laser in a subsequent process.

[0057] Next, a fine wiring layer 102 is formed corresponding to the fine wiring layer 10. The method for forming the fine wiring layer 102 is not particularly limited, and a semi-additive process (SAP) or a trench method can be used. When forming a seed layer, there is no particular limitation as long as it is a method that can form a metal layer on the surface of the glass carrier 100 (temporary fixing material 101), and an electroless plating method or a sputtering method can be used.

[0058] In one example of a method for forming a fine wiring layer 102, first, a metal layer (seed layer) is formed on a temporary fixing material 101. As a method for forming a metal layer by electroless plating, there is no particular limitation. The resin surface of the temporary fixing material 101 is roughened by desmearing or plasma, and a metal layer is formed on the roughened surface. As a method for forming fine wiring with a good yield, it is preferred to form a metal layer by irradiating ultraviolet rays below 200nm to suppress the roughening of the resin surface and increase the surface energy of the resin surface. As a method for irradiating ultraviolet rays below 200nm, for example, a low-pressure mercury lamp can be used. As a method for suppressing the roughening of the surface, a metal layer can also be formed by sputtering. By suppressing the roughening of the resin surface, the seed layer can be easily removed. From the viewpoint of improving the yield when fine wiring is formed, the thickness of the formed metal layer can be less than 200nm.

[0059] Next, a resist pattern is formed on the metal layer formed on the temporary fixing material 101. The spacing width of the groove portion of the resist pattern is, for example, 0.5 to 5 μm. The resist used in the resist pattern can be any of a liquid or film resist. The resist pattern can be formed by exposure based on a stepper exposure machine and development based on an alkaline aqueous solution.

[0060] The method for forming the through hole or groove in the resist pattern can use laser ablation, photolithography, imprinting, etc., but from the perspective of miniaturization and cost, a photolithography process can be used. In this case, a photosensitive resin material can be used as an insulating material. As an exposure method for the photosensitive resin material, a known projection exposure method, a contact exposure method, a direct exposure method, etc. can be used, and as a developing method, an alkaline aqueous solution such as sodium carbonate and TMAH can be used. After forming the through hole and the groove, the insulating layer can be further heated and cured. It can be implemented at a heating temperature of 100 to 200°C and a heating time of 30 minutes to 3 hours.

[0061] Next, a copper-based wiring portion is formed on the metal layer and in the groove of the resist pattern by electrolytic plating. From the viewpoint of improving the yield rate when fine wiring is formed, the thickness of the metal layer can be 10 μm or less. In addition, when the spacing width of the resist pattern is 0.5 to 5 μm, the line width of the copper wiring portion in the resist pattern formed by electrolytic plating also becomes 0.5 to 5 μm. After forming the copper-based wiring portion, the resist pattern is peeled off and the metal layer is removed. The peeling of the resist pattern is performed by a known method. In addition, the removal of the metal layer is performed using a commercially available etching solution.

[0062] By repeating such formation of wiring layers, Figure 2The wiring body 103 shown in (b) is provided with a fine wiring layer 102 on the temporary fixing material 101. Figure 2 In (b), an example of stacking 4 wiring layers 102a is shown, but it is not limited to this. The insulating part 102b other than the wiring of the fine wiring layer 102 is composed of a resin material such as polyimide resin, maleimide resin, epoxy resin, phenoxy resin, polybenzoxazole resin, acrylic resin, acrylate resin, etc. The insulating part 102b is formed in a manner of filling the periphery of the wiring layer 102a and existing around the wiring layer 102a. Such an insulating part 102b has adhesiveness and elasticity, and has a structure that is easy to become unstable in shape. In addition, a plurality of fine wiring layers 102c (wiring parts) corresponding to the fine wiring layers 10 of the plurality of thin wiring components 1 are provided on the fine wiring layer 102. Each fine wiring layer 102c is composed of a part of the wiring layer 102a and a part of the insulating part 102b. In addition, since the surface irregularities are planarized after the fine wiring layer 102 is formed, chemical mechanical polishing (CMP) can be performed.

[0063] Then, if Figure 2 As shown in (c), a support layer 104 corresponding to the support layer 20 is formed on the fine wiring layer 102. The support layer 104 is a film-like member, for example, attached to the upper surface 102d of the fine wiring layer 102 by lamination. The support layer 104 is formed of a material harder than the resin portion 102b of the fine wiring layer 102, and supports the fine wiring layer 102. As the support layer 104, a resin molded body filled with a filler of about 50 to 55% by mass, a resin sheet having a glass cloth, and a resin sheet having a hard layer on the surface can be used. From the viewpoint of the self-sharpening of the blade, the support layer 104 is preferably a resin molded body with a filler filling rate of 80% or more, and in this case, the cross-sectional diameter of the filler is more preferably 20μm or more. In addition, as the support layer 104, from the viewpoint of the self-sharpening of the blade, a resin sheet having a layer containing silicon, carbon, copper, etc. as a hard layer on the surface is also preferred. The support layer 104 is preferably formed of a material with a low thermal expansion coefficient, for example, preferably 50 ppm / ° C. or less. Also, the outer surface (the surface on the cutting side) of the support layer 104 is preferably smooth, for example, preferably the arithmetic mean roughness Ra is 50 nm or less.

[0064] The support layer 104 is made of a material harder than the resin composition or cured product of the insulating portion 102b of the fine wiring layer 102. More specifically, the support layer 104 is made of a material having a bending elastic modulus of 3 GPa or more (or a bending strength of 700 MPa or more). The thickness of the support layer 104 may be thinner than the fine wiring layer 102, for example, 20 to 80% relative to the thickness of the fine wiring layer 102. Furthermore, the thickness of the support layer 104 may be 25 to 3000% relative to the thickness of the fine wiring layer 102.

[0065] A thermosetting resin layer containing an inorganic filler can be used as an example of such a support layer 104. The content of the inorganic filler in the thermosetting resin layer is, for example, 40 to 90% by mass.

[0066] The thermosetting resin layer constituting the support layer 104 is a thermosetting resin layer containing an inorganic filler. The thermosetting resin layer is a layer of a solidified material layer formed by heating to melt and solidify. The content of the inorganic filler in the thermosetting resin layer is 40 to 90% by mass. If the content of the inorganic filler in the thermosetting resin layer is above the above lower limit, excellent low thermal expansion and heat resistance can be obtained. In addition, if the content of the inorganic filler in the thermosetting resin layer is below the above upper limit, excellent formability and conductor adhesion can be obtained. From the same point of view, the content of the inorganic filler in the thermosetting resin layer is not particularly limited, preferably 55 to 80% by mass, more preferably 60 to 75% by mass, and further preferably 65 to 70% by mass. The thickness of the thermosetting resin layer is not particularly limited, preferably 4 to 100 μm, more preferably 6 to 60 μm, and further preferably 8 to 40 μm. In addition, the thickness of the thermosetting resin layer can also be 50 μm to 1200 μm.

[0067] As the thermosetting resin contained in the thermosetting resin layer, for example, epoxy resin, phenolic resin, maleimide resin, cyanate resin (cyanate resin), isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin etc. can be enumerated. Among these, from the viewpoint of heat resistance, preferably maleimide resin, epoxy resin, cyanate resin, more preferably maleimide resin, epoxy resin, further preferably maleimide resin. Such thermosetting resin can use single 1 kind, also can use 2 or more kinds simultaneously.

[0068] As maleimide resin, it is preferably selected from the group consisting of maleimide resins and derivatives thereof having more than one N-substituted maleimide groups. That is, preferably, the thermosetting resin layer is a layer formed by a thermosetting resin composition containing a thermosetting resin and an inorganic filler, and the thermosetting resin contained in the thermosetting resin composition is selected from the group consisting of maleimide resins and derivatives thereof having more than one N-substituted maleimide groups. One or more. As one or more selected from the group consisting of maleimide resins and derivatives thereof having more than one N-substituted maleimide groups, it is preferably a resin comprising a maleimide resin having more than two N-substituted maleimide groups, a structure derived from a maleimide resin having more than two N-substituted maleimide groups, and a structure derived from a silicone compound having a primary amino group, from the viewpoint of heat resistance and low thermal expansion, more preferably a silicone-modified maleimide resin. In addition, in the present embodiment, the silicone-modified maleimide resin is one aspect of the maleimide resin.

[0069] Examples of the inorganic filler contained in the thermosetting resin layer constituting the support layer 104 include silica, alumina, titanium oxide, mica, beryllium oxide, barium titanate, potassium titanate, strontium titanate, calcium titanate, aluminum carbonate, magnesium hydroxide, aluminum hydroxide, aluminum silicate, calcium carbonate, calcium silicate, magnesium silicate, silicon nitride, boron nitride, clay, talc, aluminum borate, and silicon carbide. Among these, from the viewpoint of low thermal expansion, heat resistance, and flame retardancy, silica, alumina, mica, and talc are preferred, silica and alumina are more preferred, and silica is further preferred.

[0070] Examples of silica include precipitated silica produced by a wet process and having a high water content, and dry-process silica produced by a dry process and containing almost no bound water, etc. Dry-process silica, further including ground silica, fumed silica, fused silica, etc., depending on the production method, may be used.

[0071] The average particle size of the inorganic filler is not particularly limited. From the perspective of the dispersibility and fine distribution of the inorganic filler, it is 0.01 to 20 μm, preferably 0.05 to 20 μm, more preferably 0.1 to 10 μm, further preferably 0.2 to 1 μm, and particularly preferably 0.3 to 0.8 μm. In addition, in this specification, the average particle size refers to the particle size of the point equivalent to 50% of the volume when the cumulative frequency distribution curve based on the particle size is obtained with the total volume of the particles as 100%. The average particle size of the inorganic filler can be measured, for example, by using a particle size distribution measuring device using a laser diffraction scattering method. As the shape of the inorganic filler, for example, spherical, crushed, etc. can be cited, preferably spherical.

[0072] For the purpose of improving the dispersibility with inorganic fillers and the adhesion of organic components, a coupling agent can be used in the thermosetting resin composition. As a coupling agent, for example, a silane coupling agent, a titanate coupling agent, etc. can be mentioned. Among these, a silane coupling agent is preferably used. As a silane coupling agent, for example, an aminosilane coupling agent, a vinyl silane coupling agent, an epoxy silane coupling agent, etc. can be mentioned.

[0073] When a coupling agent is used in a thermosetting resin composition, the surface treatment method of the inorganic filler material may be a whole blending treatment method in which the coupling agent is added after the inorganic filler material is prepared in the resin composition, and preferably a method in which the coupling agent is surface treated in advance in the inorganic filler material by dry or wet methods. In order to improve dispersibility, the inorganic filler material may be mixed with other components after being made into a paste pre-dispersed in an organic solvent.

[0074] Furthermore, the supporting layer 104 may also include a second thermosetting resin layer containing a rubber component as an arbitrary layer. The content of the inorganic filler in the second thermosetting resin layer is, for example, 0 to 20% by mass. By providing the second thermosetting resin layer, the generation of cracks in the resin layer can be suppressed. In addition, in this specification, "rubber component" refers to a cross-linked elastomer or a cross-linkable elastomer. The rubber component contained in the second thermosetting resin layer may exist in a form that reacts with other components. The content of the inorganic filler in the second thermosetting resin layer is 0 to 20% by mass. If the content of the inorganic filler in the second thermosetting resin layer is below the above-mentioned upper limit, the cracks in the resin layer can be fully suppressed.

[0075] From the same viewpoint as above, the content of the inorganic filler in the second thermosetting resin layer is not particularly limited, and is preferably 0 to 10% by mass, more preferably 0 to 5% by mass, and further preferably 0 to 1% by mass. As the inorganic filler in the second thermosetting resin layer, the same inorganic filler as that in the above-mentioned thermosetting resin layer can be used.

[0076] The second thermosetting resin layer is a layer formed by the second thermosetting resin composition containing a thermosetting resin and a rubber component. As the thermosetting resin used in the second thermosetting resin layer, for example, epoxy resin, phenolic resin, maleimide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazine resin, melamine resin, etc. can be cited. Among these, from the viewpoint of heat resistance, preferably maleimide resin, epoxy resin, cyanate resin, more preferably maleimide resin, epoxy resin, further preferably epoxy resin. Thermosetting resin (a) can use a single one, and can also use more than two kinds simultaneously.

[0077] As the rubber component used in the second thermosetting resin layer, for example, cross-linked rubber particles, liquid rubber, etc. can be cited. Among these, from the viewpoint of suppressing the cracking of the resin layer, cross-linked rubber particles are preferred. As cross-linked rubber particles, for example, butadiene rubber particles, isoprene rubber particles, chloroprene rubber particles, styrene rubber particles, acrylic rubber particles, silicone rubber particles, natural rubber particles, styrene-butadiene rubber particles, acrylonitrile butadiene rubber particles, carboxylic acid-modified acrylonitrile butadiene rubber particles, core-shell rubber particles, etc. can be cited. Among these, acrylonitrile butadiene rubber particles and carboxylic acid-modified acrylonitrile butadiene rubber particles are preferred, and carboxylic acid-modified acrylonitrile butadiene rubber particles are more preferred. Rubber component (b) can be used alone or in combination of two or more.

[0078] Then, if Figure 3 As shown in (a), the wiring body 105 including the fine wiring layer 102 and the supporting layer 104 is singulated in such a manner that each of the fine wiring layers 102c has at least one of the fine wiring layers 102c. In this singulation process, the fine wiring layer 102 is cut from the supporting layer 104 side by a blade D by using Dicer cutting to singulate it. The singulated supporting layer 104 becomes a plurality of supporting layers 104a. And, a cutting region 104b is formed between each supporting layer 104a. In addition, during this cutting, the temporary fixing material 101 may not be cut, or a part of it may be cut.

[0079] Then, if Figure 3 As shown in (b), the cut wiring body 105A is attached to the dicing tape 107 via the adhesive film 106. Figure 3 As shown in (c) , the temporary fixing material 101 is irradiated with laser light L, so that the glass carrier 100 and the temporary fixing material 101 are peeled off from the wiring body 105A.

[0080] Then, if Figure 4 As shown in (a), the cutting tape 107 is extended radially outward, and the adhesive film 106 is singulated and divided into separate adhesive films 106a in the same manner as the wiring body 105. During this extension, the adhesive film 106 can be singulated by cooling and expanding. When the adhesive film 106 is singulated by expansion, its tearing force is transmitted to the surrounding films, etc., but in this manufacturing method, a hard supporting layer 104a is provided thereon. Therefore, no force is transmitted to the fine wiring layer 102c, and the dimensional accuracy of the singulated fine wiring layer 102c is not affected. As a result, the adhesive film 106 is directly cut along the cutting area 104b of the supporting layer 104a to form a layer corresponding to the above-mentioned adhesive layer 30. Thereafter, as Figure 4 As shown in (b), the individual thin wiring components 1 are picked up to obtain Figure 4 The thin wiring component 1 shown in (c).

[0081] [Method for manufacturing wiring board]

[0082] Next, refer to Figure 5 , a method for manufacturing a wiring board using the above-mentioned thin wiring component 1 is described. Figure 5 1 is a diagram sequentially showing a method for manufacturing a wiring substrate using a thin wiring component. In the wiring substrate manufacturing method, first, a thin wiring component 1 is prepared, and a substrate body 201 is prepared. Figure 5 As shown in (a), the substrate body 201 is a component formed into a substrate shape by alternately stacking insulating layers 202 and wiring layers 203. In addition, an opening 204 for arranging the thin wiring component 1 is provided on the substrate body 201. When the preparation of the thin wiring component 1 is completed, the thin wiring component 1 is set in the opening 204 of the substrate body 201. At this time, the adhesive layer 30 of the thin wiring component 1 is attached to the bottom surface of the opening 204.

[0083] Then, if Figure 5 As shown in (b), an insulating resin portion 205 is formed on the remaining portion of the opening 204 where the thin wiring component 1 is provided and on the surface 201a of the substrate body 201. The insulating resin portion 205 can be formed using an insulating resin film, or can be formed by coating or filling a liquid resin composition. Then, the insulating resin portion 205 is patterned to form the wiring 206. Then, as shown in FIG. Figure 5 As shown in (c) of FIG. 1 , a connection terminal 208 is provided to electrically connect the copper wiring 14 of the thin wiring member 1 and the connection terminal 208. In the above manner, the wiring board 200 can be obtained.

[0084] As described above, in the manufacturing method of the thin wiring component involved in the present embodiment, the support layer 104 is formed to be harder than the insulating portion 102b of the fine wiring layer 102, and the wiring body 105 including the fine wiring layer 102 and the support layer 104 is singulated in a manner that each has at least one fine wiring layer 102c. As a result, the wiring body 105 can be singulated in a state where the fine wiring layer 102, which is unstable in shape, is supported by the hard support layer 104. Therefore, according to this manufacturing method, the thin and unstable thin wiring component 1 can be singulated with high precision. In addition, when the fine wiring layer 102 is thin, the fine wiring layer 102 may be rolled up due to the impact (for example, water pressure) during singulation (for example, cutting), but according to this manufacturing method, the support layer 104 supports the fine wiring layer 102, so such rolling up can be suppressed. In this manufacturing method, the wiring body 105 is separated into pieces in a state where the supporting layer 104 which is harder than other parts is attached to one surface of the fine wiring layer 102 , so that the separation can be performed more reliably.

[0085] Furthermore, in the method for manufacturing a thin wiring component according to the present embodiment, the wiring body 105 is singulated by cutting it from the support layer 104 toward the fine wiring layer 102 with a blade D. Therefore, since the cutting is performed from the hard support layer 104 side, the fine wiring layer 102, which is cut after the support layer 104 and has an unstable shape, can be cut with high precision, and the cutting performance can be improved.

[0086] Furthermore, in the manufacturing method of the thin wiring component according to the present embodiment, when singulating, the wiring body 105 is singulated by cutting with the blade D in a state where the fine wiring layer 102 is sandwiched between the glass carrier 100 and the support layer 104. In this case, the fine wiring layer 102, whose shape is unstable, is sandwiched between the glass carrier 100 and the hard support layer 104 to be cut in a state where the movement is fixed, so that it is possible to cut with higher precision.

[0087] Furthermore, the manufacturing method of the thin wiring component involved in the present embodiment may further include the following steps: attaching the monolithic wiring body 105 to the adhesive film 106; removing the glass carrier 100 from the wiring body 105 after attaching to the adhesive film 106; and expanding the adhesive film 106 to which the monolithic wiring body 105 is attached. In this manufacturing method, in the attaching step, the adhesive film 106 is attached to the supporting layer 104 of the wiring body 105, and in the expanding step, the adhesive film 106 is cut along the cutting area 104b in the supporting layer 104. In this case, the fine wiring layer 102 whose shape is unstable due to the breaking of the adhesive film 106 during expansion can be suppressed from being stretched and deteriorating in dimensional accuracy. Therefore, according to this manufacturing method, the dimensional accuracy of the thin wiring component can be maintained at a high level.

[0088] Furthermore, in the manufacturing method of the thin wiring component according to the present embodiment, the thickness of the fine wiring layer 102 can be 200 μm or less. In this case, the thickness of the thin wiring component 1 can be thinned more reliably. Furthermore, even if the thickness of the fine wiring layer 10 is 200 μm or less, according to any of the above-mentioned manufacturing methods, a wiring body having a wiring layer with unstable shape can be singulated with high precision.

[0089] Furthermore, in the method for manufacturing a thin wiring component according to the present embodiment, the thickness of the support layer 104 may be 25 to 3000% or less of the thickness of the fine wiring layer 102. When the thickness of the support layer 104 is 25% or more of the thickness of the fine wiring layer 102, the wiring layer whose shape is unstable can be firmly supported by the support layer 104 and can be singulated with high precision. Furthermore, when the thickness of the support layer 104 is 3000% or less of the thickness of the fine wiring layer 102, the thin wiring component can be kept thin without increasing its thickness.

[0090] Furthermore, in the manufacturing method of the thin wiring component according to the present embodiment, the support layer 104 may be formed of a material having a bending elastic modulus of 3 GPa or more (or a bending strength of 700 MPa or more). In this case, during singulation, the shape-unstable fine wiring layer 102 can be reliably supported by the hard support layer 104. Therefore, according to this manufacturing method, singulation can be performed with high precision.

[0091] Furthermore, in the manufacturing method of the thin wiring component involved in the present embodiment, the support layer 104 may include a thermosetting resin layer containing an inorganic filler. In this case, the self-sharpening effect of the blade can be exerted by the inorganic filler. In this case, the content of the inorganic filler in the thermosetting resin layer is preferably 40 to 90% by mass. In addition, the average particle size of the inorganic filler is preferably 0.05 μm or more, and more preferably 0.1 μm or more.

[0092] Furthermore, in the method for manufacturing a thin wiring member according to the present embodiment, the glass carrier 100 may have an arithmetic mean roughness Ra of 50 nm or less. In this case, the wiring layer produced on the glass carrier 100 can be finely miniaturized with high precision.

[0093] Furthermore, in the method for manufacturing a thin wiring member according to the present embodiment, the fine wiring layer 102 may include wirings having a line width of 5 μm or less. In this case, a thin wiring member having fine wirings can be obtained.

[0094] [Another method for manufacturing a thin wiring component]

[0095] Next, refer to Figure 6 to Figure 8 , another method for manufacturing the thin wiring component 1 will be described. Figure 6 to Figure 8 It means in sequence Figure 1 Hereinafter, the differences from the above-mentioned method for manufacturing a thin wiring component will be mainly described, and the description of the same parts or components will be omitted.

[0096] like Figure 6As shown in (a), first, a glass carrier 100 is prepared. Then, a temporary fixing material 101 is attached to the glass carrier 100. In this other manufacturing method, a support layer 104 is further formed on the temporary fixing material 101. The support layer 104 is a layer made of a hard material as described above.

[0097] Then, if Figure 6 As shown in (b), the fine wiring layer 102 is formed on the support layer 104. The fine wiring layer 102 can be formed by the same process as the above-mentioned method, for example, by using a semi-additive process (SAP) or a trench method.

[0098] Then, if Figure 6 As shown in (c), another carrier 110 (second carrier) is attached to the fine wiring layer 102. An adhesive layer 111 may be provided on the carrier 110. The carrier 110 may be made of glass like the glass carrier 100, or may be made of other materials.

[0099] Next, if the carrier 110 is attached to the fine wiring layer 102, Figure 7 As shown in (a) of FIG. 1 , the glass carrier 100 used for producing the fine wiring layer 102 is peeled off. This peeling is performed by peeling off the temporary fixing material 101 by laser irradiation in the same manner as in the above-mentioned production method.

[0100] Next, if the glass carrier 100 is peeled off, Figure 7 The surface of the support layer 104 is wet-etched as shown in (b). Thus, the components of the temporary fixing material attached to the support layer are removed. Figure 7 As shown in (c) , the fine wiring layer 102 is attached to the dicing tape 107 via the adhesive film 106 .

[0101] Next, the fine wiring layer 102 is attached to the end of the dicing tape, as shown in FIG. Figure 8 The carrier 110 is peeled off by laser or the like as shown in (a) of FIG. Figure 8 As shown in (b), the fine wiring layer 102 and the supporting layer 104 are singulated by cutting using a blade D of a Dicer from the fine wiring layer 102 toward the supporting layer 104. During this cutting, the adhesive film 106 is also singulated. By such cutting, as Figure 8 As shown in (b) and (c) of FIG. 1 , a thin wiring component 1 including a fine wiring layer 102c, a supporting layer 104a, and an adhesive film 106a is formed.

[0102] As described above, in another method for manufacturing a thin wiring component according to the present embodiment, a support layer 104 that is harder than the insulating portion 102b of the fine wiring layer 102 is formed in the same manner as in the above-mentioned manufacturing method, and the wiring body including the fine wiring layer 102 and the support layer 104 is singulated in such a manner that each of the wiring bodies has at least one fine wiring layer 102c. Thus, the wiring body can be singulated in a state where the fine wiring layer 102, which is unstable in shape, is supported by the hard support layer 104. Therefore, according to this manufacturing method, the thin wiring component 1, which is thin and unstable in shape, can be singulated with high precision. In addition, when the fine wiring layer 102 is thin, the fine wiring layer 102 may be rolled up due to impact (e.g., water pressure) during singulation (e.g., cutting), but according to this manufacturing method, the fine wiring layer 102 is supported by the support layer 104, so such rolling up can be suppressed. In particular, the support layer 104 supports the bottom of the fine wiring layer 102, so such curling can be appropriately suppressed. In addition, in this manufacturing method, by singulating the wiring body with the hard support layer 104 attached to one surface of the fine wiring layer 102, such curling can be more reliably suppressed.

[0103] Furthermore, in another method for manufacturing a thin wiring component according to the present embodiment, during singulation, the wiring body is singulated by cutting from the fine wiring layer 102 toward the support layer 104 using a blade D. In this case, although the cutting is performed from the fine wiring layer 102, the fine wiring layer 102 is firmly supported on the opposite side surface by the hard support layer 104, so the cutting can be performed in a state where the fine wiring layer 102 is fixed to a certain extent. Therefore, according to this other manufacturing method, a thin wiring component with an unstable shape can be cut with high precision.

[0104] Furthermore, the manufacturing method of the thin wiring component according to the present embodiment includes the following steps: attaching a carrier 110 to the surface of the fine wiring layer 102 and the surface opposite to the surface to which the support layer 104 is attached; removing the glass carrier 100 after attaching the carrier 110; and attaching the wiring body to which the carrier 110 is attached to the adhesive film 106. In the singulation step, after being attached to the adhesive film 106, the fine wiring layer 102, the support layer 104, and the adhesive film 106 can be cut to be singulated. In this case, the glass carrier 100 to which the support layer 104 is attached can be removed, so that the component of the temporary fixing material attached to the support layer can be removed by etching or the like. In addition, by cutting to the adhesive film 106, it is possible to prevent the deterioration of the dimensional accuracy of the fine wiring layer 102 due to the breaking of the adhesive film 106 when the adhesive film 106 is expanded.

[0105] Furthermore, the manufacturing method of the thin wiring component involved in the present embodiment further includes a process of removing the carrier 110. In the singulation process, after removing the carrier 110, the fine wiring layer 102, the support layer 104 and the adhesive film 106 are cut to singulate them. As a result, there is no need to cut the carrier 110, so the material of the carrier 110 can be selected more freely. Furthermore, there is no need to cut the carrier 110, so the cutting speed can be increased, and the manufacturing efficiency can be improved. In addition, it can be seen that another manufacturing method involved in the present embodiment can also play the other effects in the above-mentioned manufacturing method, and the description is omitted.

[0106] [Another method for manufacturing a thin wiring component]

[0107] Next, refer to Fig. 9 , another method for manufacturing the thin wiring component 1 will be described. Fig. 9 It means in sequence Figure 1 Hereinafter, the differences from the above-mentioned method for manufacturing a thin wiring component and another method for manufacturing a thin wiring component will be mainly described, and the description of the same parts or components will be omitted.

[0108] In this further manufacturing method, first, the above-mentioned another manufacturing method is carried out in the same manner. Figure 6 (a)~ Figure 7 The process shown in (c). Fig. 9 (a) and Figure 7 In this further manufacturing method, if Fig. 9 As shown in (a) of FIG. 1 , if an adhesive film 106 is attached to the fine wiring layer 102 to which the carrier 110 is attached, Fig. 9 As shown in (b) of FIG. 1 , the wiring body is singulated by cutting using Dicer without peeling off the carrier 110. Fig. 9 As shown in (b) and (c) of FIG. 1 , a thin wiring component 1A including a fine wiring layer 102c (10), a supporting layer 104a (20), an adhesive film 106a (30) and a carrier 110a is formed.

[0109] As described above, in another manufacturing method of the thin wiring component involved in this embodiment, when singulating, the carrier 110, the fine wiring layer 102, the support layer 104 and the adhesive film 106 are cut to singulate. In this case, the fine wiring layer 102, which is unstable in shape, is sandwiched between the hard carrier 110 and the hard support layer 104 and cut in a state of fixed movement, so it can be cut with high precision. In addition, it can be known that another manufacturing method involved in this embodiment can also play the other effects in the above-mentioned manufacturing method and another manufacturing method, and the description is omitted.

[0110] [Another method for manufacturing a wiring board]

[0111] Next, refer to Fig.10 Another method of manufacturing a wiring board using the above-mentioned thin wiring component 1 will be described. Fig.10 1 is a diagram sequentially showing another method of manufacturing a wiring substrate using a thin wiring component. In the manufacturing method of the wiring substrate, first, a thin wiring component 1 is prepared, and a substrate body 301 is prepared. Fig.10 As shown in (a) of FIG. 1 , the substrate body 301 is a member in which insulating layers 302 and wiring layers 303 are alternately stacked. In addition, a placement layer 304 for placing the thin wiring member 1 is provided on the substrate body 301 .

[0112] Next, when the thin wiring component 1 and the like are prepared, Fig.10 As shown in (b) of FIG. 1 , the thin wiring component 1 is placed on the placement layer 304 of the substrate body 301 . At this time, the adhesive layer 30 of the thin wiring component 1 is attached to the placement layer 304 .

[0113] Then, if Fig.10 As shown in (c), an insulating resin portion 305 is formed on the installation layer 304 of the substrate body 301 provided with the thin wiring component 1. Then, the insulating resin portion 305 is patterned to form wiring 306. After that, a connection terminal may be provided. Through the above, the wiring substrate 300 can be obtained.

[0114] The above is a description of a method for manufacturing a thin wiring component, a method for manufacturing a thin wiring component, and a wiring substrate according to an embodiment of the present invention, but the present invention is not limited to the above embodiment and can be appropriately changed without departing from the main purpose thereof. For example, in the above embodiment, the case of singulating the fine wiring layer 102 by cutting using a Dicer (blade D) is described, but the fine wiring layer 102 can be singulated by a laser or the like. Furthermore, the method for dividing the adhesive film 106 to which the singulated wiring body is attached is not limited to the above-mentioned extended method, and a method of burning off a specified portion of the adhesive film 106 by a laser or a method of dividing with a blade or the like can be used.

[0115] Explanation of symbols

[0116] 1, 1A-thin wiring component, 10-fine wiring layer, 20-supporting layer, 30-adhesive layer, 100-glass carrier (first carrier), 102-fine wiring layer, 102b-insulating portion (insulating portion), 102c-fine wiring layer (wiring portion), 104-supporting layer, 105, 105A-wiring body, 106-adhesive film, 110-carrier (second carrier), 201, 301-substrate body (substrate), 206, 208, 306-connecting terminals, 200, 300-wiring substrate.

Claims

1. A method for manufacturing a thin wiring component, which is a method for manufacturing a plurality of thin wiring components, the method comprising the following steps: Prepare the first vector; A wiring layer is formed on the first carrier, wherein the wiring layer has a plurality of wiring portions corresponding to the plurality of thin wiring components and an insulating portion existing around the plurality of wiring portions; forming a support layer harder than the insulating portion of the wiring layer; and The wiring body including the wiring layer and the supporting layer is divided into individual pieces so as to have at least one wiring portion among the plurality of wiring portions.

2. The method for manufacturing a thin wiring component according to claim 1, wherein: In the singulation process, the wiring body is cut from the support layer toward the wiring layer with a blade and singulated.

3. The method for manufacturing a thin wiring component according to claim 2, wherein: In the singulation step, the wiring body is cut and singulated in a state where the wiring layer is sandwiched between the first carrier and the supporting layer.

4. The method for manufacturing a thin wiring component according to claim 2 or 3, further comprising the following steps: attaching the singulated wiring body to an adhesive film; After being attached to the adhesive film, the first carrier is removed from the wiring body; and dividing the adhesive film to which the individualized wiring bodies are attached, In the attaching step, the adhesive film is attached to the support layer of the wiring body. In the dividing step, the adhesive film is divided along the cutting region in the support layer.

5. The method for manufacturing a thin wiring component according to claim 1, wherein: In the step of forming the supporting layer, the supporting layer is formed on the first carrier. In the step of forming the wiring layer, the wiring layer is formed on the supporting layer.

6. The method for manufacturing a thin wiring component according to claim 5, wherein: In the singulation process, the wiring body is cut from the wiring layer toward the support layer with a blade and singulated.

7. The method for manufacturing a thin wiring component according to claim 6, comprising the following steps: attaching a second carrier on a surface of the wiring layer and opposite to a surface to which the support layer is attached; After attaching the second carrier, the first carrier is removed; and affixing the wiring body to which the second carrier is attached to an adhesive film, In the singulation step, after being attached to the adhesive film, the wiring layer, the support layer, and the adhesive film are cut and singulated.

8. The method for manufacturing a thin wiring component according to claim 7, further comprising the step of removing the second carrier. In the singulation step, after the second carrier is detached, the wiring layer, the support layer, and the adhesive film are cut and singulated.

9. The method for manufacturing a thin wiring component according to claim 7, wherein: In the singulation step, the second carrier, the wiring layer, the support layer, and the adhesive film are cut and singulated.

10. The method for manufacturing a thin wiring component according to any one of claims 1 to 9, wherein: The wiring layer has a thickness of 200 μm or less.

11. The method for manufacturing a thin wiring component according to any one of claims 1 to 10, wherein: The thickness of the supporting layer is not less than 25% and not more than 3000% of the thickness of the wiring layer.

12. The method for manufacturing a thin wiring component according to any one of claims 1 to 11, wherein: The support layer is formed of a material having a bending elastic modulus of 3 GPa or more.

13. The method for manufacturing a thin wiring component according to any one of claims 1 to 12, wherein: The support layer includes a thermosetting resin layer containing an inorganic filler material.

14. The method for manufacturing a thin wiring component according to claim 13, wherein: The content of the inorganic filler in the thermosetting resin layer is 40 mass % or more and 90 mass % or less.

15. The method for manufacturing a thin wiring component according to claim 13 or 14, wherein: The average particle size of the inorganic filler is greater than 0.05 μm.

16. The method for manufacturing a thin wiring component according to any one of claims 1 to 15, wherein: The first carrier is a glass carrier having an arithmetic mean roughness Ra of 50 nm or less.

17. The method for manufacturing a thin wiring component according to any one of claims 1 to 16, wherein: The wiring layer includes wirings having a line width of 5 μm or less.

18. A thin wiring component comprising: A wiring layer having wiring and a resin composition or a cured product thereof present around the wiring; and A support layer is provided on one surface of the wiring layer, The support layer is formed of a material harder than the resin composition of the wiring layer or a cured product thereof.

19. The thin wiring component according to claim 18, wherein The wiring layer has a thickness of 200 μm or less, The thickness of the support layer is 50 μm or more and 1200 μm or less. The wiring layer has wirings having a line width of 5 μm.

20. The thin wiring component according to claim 18 or 19, wherein The support layer is formed of a material having a bending elastic modulus of 3 GPa or more.

21. The thin wiring component according to any one of claims 18 to 20, wherein The support layer includes a thermosetting resin layer containing an inorganic filler material.

22. The thin wiring component according to claim 21, wherein The content of the inorganic filler in the thermosetting resin layer is 40 mass % or more and 90 mass % or less.

23. A method for manufacturing a wiring substrate, comprising the following steps: A thin wiring component manufactured by the method for manufacturing a thin wiring component according to any one of claims 1 to 17 is prepared; placing the thin wiring component on or within a substrate; and The wiring of the thin wiring member is connected to a connection terminal.

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