Silicon wafer morphology adjusting method, device and equipment

Abstract

The invention provides a silicon wafer morphology adjusting method, device and equipment, and relates to the technical field of semiconductors, the silicon wafer morphology adjusting method comprises the following steps: obtaining a morphology graph of a first silicon wafer processed by silicon wafer grinding equipment, obtaining morphology parameters of the first silicon wafer according to the morphology graph, the morphology parameters are used for indicating micro-morphology characteristics of the surface of the first silicon wafer, and the machining parameters of the silicon wafer grinding equipment are adjusted according to the morphology parameters. According to the method, the microscopic geometrical characteristics of the silicon wafer are represented through the morphological parameters, whether the microscopic morphological characteristics of the silicon wafer are qualified or not can be visually, conveniently and accurately obtained, and under the condition that the morphological parameters indicate that the microscopic morphological characteristics are unqualified or do not meet the preset requirements, the processing parameters of the silicon wafer grinding equipment are adjusted; the microstructure characteristics of the silicon wafer processed by the adjusted silicon wafer grinding equipment are accurately adjusted, and then the silicon wafer is qualified or meets the preset requirements.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method, device and equipment for adjusting the morphology of a silicon wafer. Background Art

[0002] When processing silicon wafers through double-sided vertical grinding (DDSG) equipment, the silicon wafer and the grinding wheels on the left and right sides of the silicon wafer are all placed in the grinding chamber, and the silicon wafer is thinned by the rotation of the grinding wheels on the left and right sides of the silicon wafer. Since the diameter of the grinding wheel in the double-sided vertical grinding equipment is half of the diameter of the silicon wafer, it is difficult to control the microscopic morphological characteristics of the processed silicon wafer (including surface morphology, warpage, curvature, etc.).

[0003] The geometric features of silicon wafers processed by double-sided vertical grinding equipment mainly rely on the morphology map of the silicon wafer obtained by the detection equipment. On-site personnel judge whether the microscopic morphology features of the processed silicon wafer are qualified based on the morphology map and experience. However, this inspection method cannot accurately obtain the microscopic morphology features of the processed silicon wafer and cannot make precise adjustments to silicon wafers whose microscopic morphology features do not meet the requirements. Summary of the invention

[0004] The embodiments of the present invention provide a silicon wafer morphology adjustment method, device and equipment to solve the problem in the prior art of accurately obtaining the microscopic morphological characteristics of silicon wafers processed by double-sided vertical grinding equipment and being unable to accurately adjust silicon wafers whose microscopic morphological characteristics do not meet the requirements.

[0005] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0006] An embodiment of the present invention provides a method for adjusting silicon wafer morphology, the method comprising:

[0007] Acquire a topography image of the first silicon wafer after being processed by the silicon wafer grinding equipment;

[0008] According to the topography image, obtaining topography parameters of the first silicon wafer, wherein the topography parameters are used to indicate microscopic topography features of the surface of the first silicon wafer;

[0009] According to the morphology parameters, the processing parameters of the silicon wafer grinding equipment are adjusted.

[0010] Optionally, obtaining a topography image of the first silicon wafer after being processed by a silicon wafer grinding device includes:

[0011] Detecting the concavo-convex condition of a measuring point passing through a first diameter on the first silicon wafer to obtain a concavo-convex value of the measuring point on the first diameter;

[0012] Obtaining a topography image of the first silicon wafer according to the concavo-convex values ​​of the measuring points on the first diameter;

[0013] The first diameter is at least one diameter on the first silicon wafer.

[0014] Optionally, obtaining a topography image of the first silicon wafer according to the concavo-convex value of the measurement point of the first diameter includes:

[0015] The distance between the measuring point and the center of the first silicon wafer is used as the abscissa, and the concave-convex value of the measuring point is used as the ordinate to generate a topography image of the first silicon wafer.

[0016] Optionally, obtaining the morphology parameters of the first silicon wafer according to the morphology map includes:

[0017] generating a two-dimensional curve corresponding to each first diameter on the first silicon wafer according to the topography image;

[0018] For each measuring point on the first diameter, deriving each measuring point on the two-dimensional curve corresponding to the first diameter to obtain a curvature value corresponding to the measuring point;

[0019] According to the curvature value, the morphology parameter of the first silicon wafer is obtained.

[0020] Optionally, obtaining the topography parameter of the first silicon wafer according to the curvature value includes:

[0021] Obtain the absolute value of the curvature value corresponding to each measuring point;

[0022] The maximum value of the absolute value is used as the morphology parameter of the first silicon wafer.

[0023] Optionally, adjusting the processing parameters of the silicon wafer grinding equipment according to the morphology parameters includes:

[0024] When the morphology parameter is greater than the morphology threshold, the processing parameters of the silicon wafer grinding equipment are adjusted.

[0025] Optionally, the method further comprises:

[0026] Acquire historical morphological parameters of a second silicon wafer that was historically processed and a historical nano-morphology NT value of the second silicon wafer;

[0027] Generating a linear relationship between the historical morphology parameter and the historical nano-morphology NT value according to the historical morphology parameter and the historical nano-morphology NT value;

[0028] The morphology threshold is obtained according to the preset morphology nanometer value qualified rate and the linear relationship.

[0029] Optionally, the silicon wafer grinding device includes a first grinding wheel and a second grinding wheel;

[0030] The first grinding wheel is used to grind the first surface of the first silicon wafer, and the second grinding wheel is used to grind the second surface of the first silicon wafer; the first surface and the second surface are two opposite surfaces of the first silicon wafer;

[0031] When the first grinding wheel grinds the first surface, the second diameter on the first grinding wheel covers the radius of the first surface; the second diameter is any diameter on the first grinding wheel;

[0032] When the second grinding wheel grinds the second surface, the third diameter on the second grinding wheel covers the radius of the second surface; the third diameter is any diameter on the second grinding wheel;

[0033] The processing parameters include at least one of the following:

[0034] An angle between the first grinding wheel and a horizontal plane;

[0035] An angle between the second grinding wheel and the horizontal plane;

[0036] a distance between a first end of the second diameter and a first end of the third diameter;

[0037] a distance between a second end of the second diameter and a second end of the third diameter;

[0038] Wherein, the first end of the second diameter is an end of the second diameter covering the center of the first surface, and the first end of the third diameter is an end of the third diameter covering the center of the second surface;

[0039] The second end of the second diameter is the other end of the edge of the second diameter covering the first surface, and the second end of the third diameter is the other end of the edge of the third diameter covering the second surface.

[0040] The embodiment of the present invention further provides a silicon wafer morphology adjustment device, the device comprising:

[0041] A first acquisition module, used to acquire a topography image of a first silicon wafer after being processed by a silicon wafer grinding device;

[0042] A first processing module, configured to obtain morphological parameters of the first silicon wafer according to the morphological image, wherein the morphological parameters are used to indicate the microscopic morphological quality of the surface of the first silicon wafer;

[0043] The second processing module is used to adjust the processing parameters of the silicon wafer grinding equipment according to the morphology parameters.

[0044] An embodiment of the present invention also provides a silicon wafer morphology adjustment device, comprising: a processor, a memory, and a program stored in the memory and executable on the processor, wherein the program, when executed by the processor, implements the steps in the silicon wafer morphology adjustment method described above.

[0045] The embodiments of the present invention have the following beneficial effects:

[0046] The silicon wafer morphology adjustment method provided in the embodiment of the present invention utilizes a silicon wafer grinding device to process a first silicon wafer, obtains a morphology image of the first silicon wafer after processing, and obtains morphology parameters for indicating microscopic geometric features of the surface of the first silicon wafer based on the morphology image, that is, by generating a morphology parameter to characterize the microscopic geometric features of the silicon wafer, through the morphology parameter, it can be intuitively, conveniently and accurately determined whether the microscopic morphology features of the silicon wafer are qualified, and then, according to the morphology parameter, the processing parameters of the silicon wafer grinding device are adjusted, that is, when the morphology parameters indicate that the microscopic morphology features are unqualified or do not meet the preset requirements, by adjusting the processing parameters of the silicon wafer grinding device, the microscopic morphology features of the silicon wafer processed by the adjusted silicon wafer grinding device are accurately adjusted, and thus qualified or meet the preset requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 A flow chart showing a method for adjusting silicon wafer morphology provided by an embodiment of the present invention;

[0048] Figure 2 One of the 3D topographic images of the first silicon wafer provided by an embodiment of the present invention is shown;

[0049] Figure 3 One of the schematic diagrams showing a two-dimensional curve corresponding to a diameter at which a vertical coordinate is provided in an embodiment of the present invention;

[0050] Figure 4 One of the schematic diagrams showing a two-dimensional curve corresponding to a diameter at which a vertical coordinate is provided in an embodiment of the present invention;

[0051] Figure 5 One of the schematic diagrams showing the two-dimensional curve corresponding to the diameter at positive 45 degrees provided by an embodiment of the present invention;

[0052] Figure 6 One of the schematic diagrams showing the two-dimensional curve corresponding to the diameter at minus 45 degrees provided by an embodiment of the present invention;

[0053] Figure 7 The second 3D topography image drawn by the first silicon wafer provided by the embodiment of the present invention is shown;

[0054] Figure 8 A second schematic diagram showing a two-dimensional curve corresponding to a diameter at a longitudinal coordinate provided by an embodiment of the present invention;

[0055] Fig. 9 A second schematic diagram showing a two-dimensional curve corresponding to a diameter at a longitudinal coordinate provided by an embodiment of the present invention;

[0056] Fig.10 A second schematic diagram showing a two-dimensional curve corresponding to a diameter at a positive angle of 45 degrees provided by an embodiment of the present invention;

[0057] Fig.11 A second schematic diagram showing a two-dimensional curve corresponding to a diameter at a negative 45 degree angle provided by an embodiment of the present invention;

[0058] Fig.12 A linear relationship diagram between PV value and NT value provided by an embodiment of the present invention;

[0059] Fig.13 A specific flow chart showing a method for adjusting silicon wafer morphology provided by an embodiment of the present invention;

[0060] Fig.14 A schematic diagram showing the structure of a silicon wafer profile adjustment device provided by an embodiment of the present invention;

[0061] Fig.15 A schematic diagram showing the structure of a silicon wafer profile adjustment device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0062] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention more clear, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.

[0063] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0064] In order to solve the problem in the prior art of accurately obtaining the microscopic morphology characteristics of silicon wafers processed by double-sided vertical grinding equipment and being unable to accurately adjust silicon wafers whose microscopic morphology characteristics do not meet the requirements, the embodiments of the present invention provide a silicon wafer morphology adjustment method, device and equipment.

[0065] like Figure 1 As shown, an embodiment of the present invention provides a method for adjusting silicon wafer morphology, the method comprising:

[0066] Step 101: Obtain a topography image of a first silicon wafer processed by a silicon wafer grinding device.

[0067] The silicon wafer grinding device may be a double-disc grinder, a single-side grinder, etc. In this embodiment, the silicon wafer grinding device is a double-disc grinder as an example for description.

[0068] In this step, a first silicon wafer is ground using a silicon wafer grinding device to obtain a processed first silicon wafer, and a topography image of the processed first silicon wafer is obtained.

[0069] The topography image may be a 2D topography image or a 3D topography image.

[0070] The first silicon wafer may be any silicon wafer, or may be the first few silicon wafers in a batch of silicon wafers or a box of silicon wafers, or the first silicon wafer may be a trial-processed silicon wafer.

[0071] Step 102: Obtaining morphological parameters of the first silicon wafer according to the morphological image, wherein the morphological parameters are used to indicate microscopic morphological features of the surface of the first silicon wafer.

[0072] In this step, after the topography image is generated, the topography image is processed to obtain topography parameters for characterizing microscopic topography features of the surface of the first silicon wafer.

[0073] Through this morphological parameter, it is possible to intuitively, conveniently and accurately determine whether the microscopic morphological characteristics of the silicon wafer are qualified or meet the preset requirements.

[0074] Step 103: adjusting the processing parameters of the silicon wafer grinding equipment according to the morphology parameters.

[0075] In this step, when it is determined according to the morphological parameters that the microscopic morphological features of the first silicon wafer do not meet the requirements or are unqualified, the processing parameters of the silicon wafer grinding equipment for processing the silicon wafer are adjusted. The silicon wafer is processed again using the adjusted silicon wafer grinding equipment, so that the microscopic morphological features of the silicon wafer are accurately adjusted, and the microscopic morphological features of the silicon wafer after the reprocessing are qualified or meet the preset requirements.

[0076] In an optional embodiment, obtaining a topography image of a first silicon wafer processed by a silicon wafer grinding device includes:

[0077] The concavo-convex condition of a measuring point passing through a first diameter on the first silicon wafer is detected to obtain a concavo-convex value of the measuring point on the first diameter, wherein the first diameter is at least one diameter on the first silicon wafer.

[0078] That is, in this optional embodiment, at least one first diameter on the first silicon wafer is obtained, and for each first diameter, a plurality of measuring points are respectively set on the first diameter, and for each measuring point on each diameter, the concave-convex value of the measuring point is detected.

[0079] Specifically, a wafer flatness measurement system is used to detect the concave-convex value of the measurement point.

[0080] Optionally, the number of the first diameters is four, a cross coordinate axis is divided on the surface of the first silicon wafer, and the diameter at the horizontal coordinate, the diameter at the vertical coordinate, the diameter at positive 45 degrees, and the diameter at negative 45 degrees are selected as the first diameters.

[0081] A topography image of the first silicon wafer is obtained according to the concavo-convex values ​​of the measuring points on the first diameter.

[0082] After the LBW device is used to detect the concave-convex values ​​of all the measuring points on the first diameter, a 2D or 3D topography image of the first silicon wafer is drawn according to the concave-convex values ​​of the measuring points on all the diameters.

[0083] In this embodiment, taking the drawing of the 3D topography of the first silicon wafer as an example, the 3D topography of the first silicon wafer drawn according to the concave-convex values ​​of all the measuring points on the first diameter is as follows: Figure 2 shown.

[0084] Optionally, obtaining a topography image of the first silicon wafer according to the concavo-convex value of the measurement point of the first diameter includes:

[0085] The distance between the measuring point and the center of the first silicon wafer is used as the abscissa, and the concave-convex value of the measuring point is used as the ordinate to generate a topography image of the first silicon wafer.

[0086] It should be noted that the center point of the first silicon wafer can be used as a reference, and the thickness values ​​of different measurement points relative to the reference can be detected as the concave-convex values ​​of the reference.

[0087] The midpoint of the line between the center of the upper surface of the first silicon wafer and the center of the lower surface of the first silicon wafer may be selected as the center point of the first silicon wafer.

[0088] In an optional embodiment, obtaining the morphology parameters of the first silicon wafer according to the morphology map includes:

[0089] A two-dimensional curve corresponding to each first diameter on the first silicon wafer is generated according to the topography image.

[0090] When generating a two-dimensional curve according to the topography image, a two-dimensional curve is generated for one first diameter. When the number of first diameters is four, four two-dimensional curves are generated.

[0091] The two-dimensional curve is reflected in a cross coordinate system. For each first diameter, when generating the two-dimensional curve, the distance from the measuring point on the first diameter to one end of the first diameter is used as the horizontal coordinate, and the concave and convex value of the measuring point is used as the vertical coordinate to obtain the coordinate point in the cross coordinate system. The coordinate points are connected and smoothed to generate the two-dimensional curve corresponding to the first diameter.

[0092] For example, according to Figure 2 The 3D topography of the first silicon wafer shown in FIG. 1 is shown in FIG. 1 , and the schematic diagrams of the four first diameters on the first silicon wafer generated are respectively as shown in FIG. Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, Figure 3 It is a schematic diagram of the two-dimensional curve corresponding to the diameter where the ordinate is located. Figure 4 It is a schematic diagram of the two-dimensional curve corresponding to the diameter where the ordinate is located. Figure 5 This is a schematic diagram of the two-dimensional curve corresponding to the diameter at positive 45 degrees. Figure 6 This is a schematic diagram of the two-dimensional curve corresponding to the diameter at negative 45 degrees.

[0093] For each measuring point on the first diameter, a derivative is taken for each measuring point on the two-dimensional curve corresponding to the first diameter to obtain a curvature value corresponding to the measuring point.

[0094] After the above processing flow, the two-dimensional curve is a smooth curve. The first-order inverse of the smooth curve is calculated for each measuring point along the corresponding first diameter direction, and the concave-convex value of the topography of the first silicon wafer reflected at each measuring point is converted into the curvature value corresponding to the measuring point.

[0095] The larger the absolute value of the curvature is, the more dramatic the change in the microscopic morphology of the silicon wafer at the measuring point is, and it also reflects that the difference in the concave-convex values ​​of the silicon wafer at adjacent measuring points is large.

[0096] In this embodiment, the curvature value is a parameter reflecting the morphology of the silicon wafer, and the curvature value is defined as Profile Value (PV).

[0097] The 3D topography of the first silicon wafer drawn according to the curvature value corresponding to the measurement point on the first diameter is as follows: Figure 7 As shown. Figure 7 The 3D topography of the first silicon wafer shown in FIG. 1 is shown in FIG. 1 , and the schematic diagrams of the four first diameters on the first silicon wafer generated are respectively as shown in FIG. Figure 8 , Fig. 9 , Fig.10 and Fig.11 As shown, Figure 8 It is a schematic diagram of the two-dimensional curve corresponding to the diameter where the ordinate is located. Fig. 9 It is a schematic diagram of the two-dimensional curve corresponding to the diameter where the ordinate is located. Fig.10 This is a schematic diagram of the two-dimensional curve corresponding to the diameter at positive 45 degrees. Fig.11 This is a schematic diagram of the two-dimensional curve corresponding to the diameter at negative 45 degrees.

[0098] According to the curvature value, the morphology parameter of the first silicon wafer is obtained.

[0099] That is, the topography parameters of the first silicon wafer are obtained according to the curvature value corresponding to each measuring point on the first silicon wafer.

[0100] Specifically, obtaining the morphology parameters of the first silicon wafer according to the curvature value includes:

[0101] The absolute value of the curvature value corresponding to each measuring point is obtained, that is, for a first silicon wafer, the curvature value of each measuring point on the first silicon wafer is obtained, and the absolute value is calculated to obtain the PV that summarizes all measuring points of the first silicon wafer.

[0102] The maximum value of the absolute value is used as the morphological parameter of the first silicon wafer, that is, the microscopic morphological characteristics of the silicon wafer are characterized by the maximum value of the curvature value corresponding to all measurement points on a silicon wafer as the only value. Through the maximum value of the absolute value of the curvature value, it can be clearly and intuitively indicated whether the microscopic morphological characteristics of the first silicon wafer are qualified or meet the preset requirements.

[0103] In an optional embodiment, adjusting the processing parameters of the silicon wafer grinding equipment according to the morphology parameters includes:

[0104] When the morphology parameter is greater than the morphology threshold, the processing parameters of the silicon wafer grinding equipment are adjusted.

[0105] Optionally, the morphology threshold is 0.4.

[0106] That is, when the morphology parameter is greater than 0.4, it is determined that the morphology of the first silicon wafer is abnormal (does not meet the preset requirements or is unqualified), and the processing parameters of the silicon wafer grinding equipment for processing the first silicon wafer need to be adjusted to ensure that the microscopic morphology of the silicon wafer subsequently processed by the adjusted silicon wafer grinding equipment meets the preset requirements or is qualified.

[0107] Optionally, the method further comprises:

[0108] Acquiring historical morphological parameters of a second silicon wafer that was historically processed and historical nano-topography (NT) values ​​of the second silicon wafer;

[0109] Here, the second silicon wafer is a historical silicon wafer processed by silicon wafer grinding equipment, and the number of the second silicon wafers is multiple.

[0110] According to the above-mentioned process of obtaining the morphological parameters of the first silicon wafer, the morphological parameters of the second silicon wafer (i.e., the historical morphological parameters) are obtained, and the NT value of the second silicon wafer is measured after double-sided polishing of the second silicon wafer, and the morphological parameter (PV) value and NT value corresponding to each second silicon wafer are obtained.

[0111] Among them, the NT value is a measurement value that characterizes the tiny ups and downs of the surface profile of the silicon wafer.

[0112] According to the historical morphology parameters and the historical nano-morphology NT value, a linear relationship between the historical morphology parameters and the historical morphology nano-value is generated.

[0113] Specifically, after accumulating a large amount of data on the morphological parameter (PV) value and the NT (THA10*10) value of the second silicon wafer, a linear correlation analysis is performed on the PV value and the corresponding NT value to obtain a linear relationship between the PV value and the corresponding NT value. The linear relationship between the PV value and the NT value of the second silicon wafer is shown in FIG. Fig.12 shown.

[0114] The morphology threshold is obtained according to the preset nano-morphology NT value qualified rate and the linear relationship.

[0115] Specifically, setting the NT value to be less than or equal to 23 nm (THA10*10≤23 nm) indicates that the second silicon wafer is qualified or meets the preset requirements, and setting the qualified rate of the NT value of a nanometer morphology to be 99%. Fig.12 The linear relationship shown in FIG. 1 shows that when the PV value is less than or equal to 0.4, the NT (THA10*10≤23nm) qualified rate of the second silicon wafer after polishing is 99.8%. Therefore, in this embodiment, 0.4 is defined as the morphology threshold. The morphology threshold is used to determine whether the microscopic morphology characteristics of the silicon wafer are qualified or meet the requirements, and whether it is necessary to adjust the processing parameters of the silicon wafer grinding equipment.

[0116] In an optional embodiment, the silicon wafer grinding device is a double-disc grinder, and the silicon wafer grinding device includes a first grinding wheel and a second grinding wheel; wherein the first grinding wheel and the second grinding wheel are respectively disposed on two sides of the silicon wafer for processing;

[0117] The first grinding wheel is used to grind the first surface of the first silicon wafer, and the second grinding wheel is used to grind the second surface of the first silicon wafer; the first surface and the second surface are two opposite surfaces of the first silicon wafer;

[0118] When the first grinding wheel grinds the first surface, the second diameter on the first grinding wheel covers the radius of the first surface; the second diameter is any diameter on the first grinding wheel;

[0119] When the second grinding wheel grinds the second surface, the third diameter on the second grinding wheel covers the radius of the second surface; the third diameter is any diameter on the second grinding wheel.

[0120] That is, when grinding the silicon wafer with a grinding wheel, for each surface of the silicon wafer, after the corresponding grinding wheel covers any radius of its surface, the silicon wafer is controlled to rotate relative to the grinding wheel to achieve grinding of the silicon wafer surface.

[0121] The processing parameters include at least one of the following:

[0122] An angle between the first grinding wheel and a horizontal plane;

[0123] An angle between the second grinding wheel and the horizontal plane;

[0124] The distance between the first end of the second diameter and the first end of the third diameter, wherein the first end of the second diameter is the end of the second diameter covering the center of the first surface, and the first end of the third diameter is the end of the third diameter covering the center of the second surface;

[0125] The distance between the second end of the second diameter and the second end of the third diameter, wherein the second end of the second diameter is the other end of the edge of the second diameter covering the first surface, and the second end of the third diameter is the other end of the edge of the third diameter covering the second surface.

[0126] Combine the following Fig.13 , specifically describes the specific process of the silicon wafer morphology adjustment method provided by an embodiment of the present invention.

[0127] Obtain the first silicon wafer after processing (or trial processing) by the silicon wafer grinding equipment, detect the topography of the silicon wafer through the detection equipment, and calculate the PV value of the measuring point according to the topography. If the PV is less than or equal to 0.4, it is judged as qualified and the silicon wafer grinding equipment can formally process the silicon wafer. If the PV is greater than 0.4, it is judged as unqualified, and the processing parameters of the silicon wafer grinding equipment are adjusted to continue trial processing the silicon wafer until the measured PV is less than or equal to 0.4. After being judged as qualified, the silicon wafer can be formally processed.

[0128] like Fig.14 As shown, an embodiment of the present invention further provides a silicon wafer morphology adjustment device, the device comprising:

[0129] A first acquisition module 1401 is used to acquire a topography image of a first silicon wafer after being processed by a silicon wafer grinding device;

[0130] A first processing module 1402 is used to obtain the topography parameters of the first silicon wafer according to the topography image, wherein the topography parameters are used to indicate the microscopic topography quality of the surface of the first silicon wafer;

[0131] The second processing module 1403 is used to adjust the processing parameters of the silicon wafer grinding equipment according to the morphology parameters.

[0132] Optionally, the first acquisition module 1401 includes:

[0133] A first processing unit is used to detect the concave-convex condition of a measuring point passing through a first diameter on the first silicon wafer, and obtain a concave-convex value of the measuring point on the first diameter;

[0134] A second processing unit, configured to obtain a topography image of the first silicon wafer according to the concave-convex values ​​of the measuring points on the first diameter;

[0135] The first diameter is at least one diameter on the first silicon wafer.

[0136] Optionally, the second processing unit is specifically configured to:

[0137] The distance between the measuring point and the center of the first silicon wafer is used as the abscissa, and the concave-convex value of the measuring point is used as the ordinate to generate a topography image of the first silicon wafer.

[0138] Optionally, the first processing module 1402 includes:

[0139] A third processing unit, configured to generate a two-dimensional curve corresponding to each first diameter on the first silicon wafer according to the topography image;

[0140] a fourth processing unit, configured to, for each measuring point on the first diameter, derive each measuring point on the two-dimensional curve corresponding to the first diameter to obtain a curvature value corresponding to the measuring point;

[0141] The fifth processing unit is used to obtain the morphology parameter of the first silicon wafer according to the curvature value.

[0142] Optionally, the fifth processing unit is specifically configured to:

[0143] Obtain the absolute value of the curvature value corresponding to each measuring point;

[0144] The maximum value of the absolute value is used as the morphology parameter of the first silicon wafer.

[0145] Optionally, the second processing module 1403 includes:

[0146] The sixth processing unit is used to adjust the processing parameters of the silicon wafer grinding equipment when the morphology parameter is greater than the morphology threshold.

[0147] Optionally, the transposition further includes:

[0148] A second acquisition module is used to acquire historical morphological parameters of a second silicon wafer processed historically and a historical nano-morphology NT value of the second silicon wafer;

[0149] A third processing module is used to generate a linear relationship between the historical morphology parameter and the historical nano-morphology value according to the historical morphology parameter and the historical nano-morphology NT value;

[0150] The fourth processing module is used to obtain the morphology threshold value according to the preset morphology nano value qualified rate and the linear relationship.

[0151] Optionally, the silicon wafer grinding device includes a first grinding wheel and a second grinding wheel;

[0152] The first grinding wheel is used to grind the first surface of the first silicon wafer, and the second grinding wheel is used to grind the second surface of the first silicon wafer; the first surface and the second surface are two opposite surfaces of the first silicon wafer;

[0153] When the first grinding wheel grinds the first surface, the second diameter on the first grinding wheel covers the radius of the first surface; the second diameter is any diameter on the first grinding wheel;

[0154] When the second grinding wheel grinds the second surface, the third diameter on the second grinding wheel covers the radius of the second surface; the third diameter is any diameter on the second grinding wheel;

[0155] The processing parameters include at least one of the following:

[0156] An angle between the first grinding wheel and a horizontal plane;

[0157] An angle between the second grinding wheel and the horizontal plane;

[0158] a distance between a first end of the second diameter and a first end of the third diameter;

[0159] a distance between a second end of the second diameter and a second end of the third diameter;

[0160] Wherein, the first end of the second diameter is an end of the second diameter covering the center of the first surface, and the first end of the third diameter is an end of the third diameter covering the center of the second surface;

[0161] The second end of the second diameter is the other end of the edge of the second diameter covering the first surface, and the second end of the third diameter is the other end of the edge of the third diameter covering the second surface.

[0162] It should be noted that the silicon wafer morphology adjustment device provided in the embodiment of the present invention is a device capable of executing the above-mentioned silicon wafer morphology adjustment method. All embodiments of the above-mentioned silicon wafer morphology adjustment method are applicable to the device and can achieve the same or similar technical effects.

[0163] like Fig.15 As shown, an embodiment of the present invention also provides a silicon wafer morphology adjustment device, including: a processor 1501; and a memory 1503 connected to the processor 1501 through a bus interface 1502, the memory 1503 is used to store programs and data used by the processor 1501 when performing operations, and the processor 1501 calls and executes the programs and data stored in the memory 1503.

[0164] The transceiver 1504 is connected to the bus interface 1502 and is used to receive and send data under the control of the processor 1501. Specifically, the processor 1501 is used to read the program in the memory 1503, and the processor 1501 is used to perform the following process:

[0165] Acquire a topography image of the first silicon wafer after being processed by the silicon wafer grinding equipment;

[0166] According to the topography image, obtaining topography parameters of the first silicon wafer, wherein the topography parameters are used to indicate microscopic topography features of the surface of the first silicon wafer;

[0167] According to the morphology parameters, the processing parameters of the silicon wafer grinding equipment are adjusted.

[0168] Optionally, the processor 1501 is configured to:

[0169] Detecting the concavo-convex condition of a measuring point passing through a first diameter on the first silicon wafer to obtain a concavo-convex value of the measuring point on the first diameter;

[0170] Obtaining a topography image of the first silicon wafer according to the concavo-convex values ​​of the measuring points on the first diameter;

[0171] The first diameter is at least one diameter on the first silicon wafer.

[0172] Optionally, the processor 1501 is specifically configured to:

[0173] The distance between the measuring point and the center of the first silicon wafer is used as the abscissa, and the concave-convex value of the measuring point is used as the ordinate to generate a topography image of the first silicon wafer.

[0174] Optionally, the processor 1501 is configured to:

[0175] generating a two-dimensional curve corresponding to each first diameter on the first silicon wafer according to the topography image;

[0176] For each measuring point on the first diameter, deriving each measuring point on the two-dimensional curve corresponding to the first diameter to obtain a curvature value corresponding to the measuring point;

[0177] According to the curvature value, the morphology parameter of the first silicon wafer is obtained.

[0178] Optionally, the processor 1501 is specifically configured to:

[0179] Obtain the absolute value of the curvature value corresponding to each measuring point;

[0180] The maximum value of the absolute value is used as the morphology parameter of the first silicon wafer.

[0181] Optionally, the processor 1501 is configured to:

[0182] When the morphology parameter is greater than the morphology threshold, the processing parameters of the silicon wafer grinding equipment are adjusted.

[0183] Optionally, the processor 1501 is further configured to:

[0184] Acquire historical morphological parameters of a second silicon wafer that was historically processed and a historical nano-morphology NT value of the second silicon wafer;

[0185] Generating a linear relationship between the historical morphology parameter and the historical nano-morphology NT value according to the historical morphology parameter and the historical nano-morphology NT value;

[0186] The morphology threshold is obtained according to the preset morphology nanometer value qualified rate and the linear relationship.

[0187] Optionally, the silicon wafer grinding device includes a first grinding wheel and a second grinding wheel;

[0188] The first grinding wheel is used to grind the first surface of the first silicon wafer, and the second grinding wheel is used to grind the second surface of the first silicon wafer; the first surface and the second surface are two opposite surfaces of the first silicon wafer;

[0189] When the first grinding wheel grinds the first surface, the second diameter on the first grinding wheel covers the radius of the first surface; the second diameter is any diameter on the first grinding wheel;

[0190] When the second grinding wheel grinds the second surface, the third diameter on the second grinding wheel covers the radius of the second surface; the third diameter is any diameter on the second grinding wheel;

[0191] The processing parameters include at least one of the following:

[0192] An angle between the first grinding wheel and a horizontal plane;

[0193] An angle between the second grinding wheel and the horizontal plane;

[0194] a distance between a first end of the second diameter and a first end of the third diameter;

[0195] a distance between a second end of the second diameter and a second end of the third diameter;

[0196] Wherein, the first end of the second diameter is an end of the second diameter covering the center of the first surface, and the first end of the third diameter is an end of the third diameter covering the center of the second surface;

[0197] The second end of the second diameter is the other end of the edge of the second diameter covering the first surface, and the second end of the third diameter is the other end of the edge of the third diameter covering the second surface.

[0198] Among them, Fig.15 1501 and 1503. The bus architecture may include any number of interconnected buses and bridges, specifically linking together various circuits of one or more processors represented by processor 1501 and memory represented by memory 1503. The bus architecture may also link together various other circuits such as peripherals, voltage regulators, and power management circuits, which are well known in the art and are therefore not further described herein. The bus interface provides a user interface 1505. The transceiver 1504 may be a plurality of components, i.e., including a transmitter and a receiver, providing a unit for communicating with various other devices on a transmission medium. The processor 1501 is responsible for managing the bus architecture and general processing, and the memory 1503 may store data used by the processor 1501 when performing operations.

[0199] In addition, a specific embodiment of the present invention further provides a readable storage medium having a computer program stored thereon, wherein the program, when executed by a processor, implements the steps in the silicon wafer morphology adjustment method as described above.

[0200] In the several embodiments provided in the present application, it should be understood that the disclosed methods and devices can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0201] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may be physically included separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0202] The above-mentioned integrated unit implemented in the form of a software functional unit can be stored in a computer-readable storage medium. The above-mentioned software functional unit is stored in a storage medium, including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform some steps of the resource selection method described in each embodiment of the present invention, or to perform some steps of the information sending method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory, referred to as ROM), random access memory (Random Access Memory, referred to as RAM), disk or optical disk and other media that can store program codes.

[0203] A specific embodiment of the present invention further provides a computer program product, including computer instructions, which, when executed by a processor, implement the above Figure 1 The various processes of the method embodiment shown can achieve the same technical effect, and will not be described again here to avoid repetition.

[0204] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for adjusting silicon wafer morphology, characterized in that: The method comprises: Acquire a topography image of the first silicon wafer after being processed by the silicon wafer grinding equipment; According to the topography image, obtaining topography parameters of the first silicon wafer, wherein the topography parameters are used to indicate microscopic topography features of the surface of the first silicon wafer; According to the morphology parameters, the processing parameters of the silicon wafer grinding equipment are adjusted.

2. The method according to claim 1, characterized in that Obtaining a topographic image of the first silicon wafer after being processed by the silicon wafer grinding equipment, including: Detecting the concavo-convex condition of a measuring point passing through a first diameter on the first silicon wafer to obtain a concavo-convex value of the measuring point on the first diameter; Obtaining a topography image of the first silicon wafer according to the concavo-convex values ​​of the measuring points on the first diameter; The first diameter is at least one diameter on the first silicon wafer.

3. The method according to claim 2, characterized in that Obtaining a topography image of the first silicon wafer according to the concavo-convex value of the measurement point of the first diameter, including: The distance between the measuring point and the center of the first silicon wafer is used as the abscissa, and the concave-convex value of the measuring point is used as the ordinate to generate a topography image of the first silicon wafer.

4. The method according to claim 1, characterized in that: Obtaining the morphological parameters of the first silicon wafer according to the morphological map includes: generating a two-dimensional curve corresponding to each first diameter on the first silicon wafer according to the topography image; For each measuring point on the first diameter, deriving each measuring point on the two-dimensional curve corresponding to the first diameter to obtain a curvature value corresponding to the measuring point; According to the curvature value, the morphology parameter of the first silicon wafer is obtained.

5. The method according to claim 4, characterized in that Obtaining the topographic parameters of the first silicon wafer according to the curvature value includes: Obtain the absolute value of the curvature value corresponding to each measuring point; The maximum value of the absolute value is used as the morphology parameter of the first silicon wafer.

6. The method according to claim 1, characterized in that According to the morphology parameters, adjusting the processing parameters of the silicon wafer grinding equipment includes: When the morphology parameter is greater than the morphology threshold, the processing parameters of the silicon wafer grinding equipment are adjusted.

7. The method according to claim 6, characterized in that The method further comprises: Acquire historical morphological parameters of a second silicon wafer that was historically processed and a historical nano-morphology NT value of the second silicon wafer; Generating a linear relationship between the historical morphology parameter and the historical nano-morphology NT value according to the historical morphology parameter and the historical nano-morphology NT value; The morphology threshold is obtained according to the preset morphology nanometer value qualified rate and the linear relationship.

8. The method according to claim 1, characterized in that The silicon wafer grinding equipment comprises a first grinding wheel and a second grinding wheel; The first grinding wheel is used to grind the first surface of the first silicon wafer, and the second grinding wheel is used to grind the second surface of the first silicon wafer; the first surface and the second surface are two opposite surfaces of the first silicon wafer; When the first grinding wheel grinds the first surface, the second diameter on the first grinding wheel covers the radius of the first surface; the second diameter is any diameter on the first grinding wheel; When the second grinding wheel grinds the second surface, the third diameter on the second grinding wheel covers the radius of the second surface; the third diameter is any diameter on the second grinding wheel; The processing parameters include at least one of the following: An angle between the first grinding wheel and a horizontal plane; An angle between the second grinding wheel and the horizontal plane; a distance between a first end of the second diameter and a first end of the third diameter; a distance between a second end of the second diameter and a second end of the third diameter; Wherein, the first end of the second diameter is an end of the second diameter covering the center of the first surface, and the first end of the third diameter is an end of the third diameter covering the center of the second surface; The second end of the second diameter is the other end of the edge of the second diameter covering the first surface, and the second end of the third diameter is the other end of the edge of the third diameter covering the second surface.

9. A silicon wafer morphology adjustment device, characterized in that: The device comprises: A first acquisition module, used to acquire a topography image of a first silicon wafer after being processed by a silicon wafer grinding device; A first processing module, configured to obtain morphological parameters of the first silicon wafer according to the morphological image, wherein the morphological parameters are used to indicate the microscopic morphological quality of the surface of the first silicon wafer; The second processing module is used to adjust the processing parameters of the silicon wafer grinding equipment according to the morphology parameters.

10. A silicon wafer morphology adjustment device, characterized in that: include: A processor, a memory, and a program stored in the memory and executable on the processor, wherein when the program is executed by the processor, the steps in the method for adjusting the silicon wafer morphology as claimed in any one of claims 1 to 8 are implemented.

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