Image sensor irradiation test device and test method

Abstract

The present invention provides an irradiation test device for an image sensor, which can be applied to the technical field of radiation effects and radiation damage assessment of electronic devices. The test device includes: an irradiation room, an irradiation plate, a cooling plate, a heat sink, a programmable power supply, a cable, a vacuum oven, a test board, a computer, and a rubber plug, wherein the position between the irradiation plate and the cooling plate is used to place the image sensor to be tested; the programmable power supply is used to control the power on and off of the cooling plate and the heat sink; the irradiated image sensor is placed in the vacuum oven and connected to the test board outside the vacuum oven via a cable; and the computer is connected to the test board to control the test conditions and obtain the test results. The arrangement of the cooling plate and the heat sink can achieve a good temperature control effect, and at the same time, the device can be quickly transferred to the vacuum oven after irradiation to avoid contact with room temperature and cause defect annealing. The present invention also provides an irradiation test method for an image sensor.

Description

Technical Field

[0001] The present invention relates to the technical field of radiation effects and radiation damage assessment of electronic devices, and in particular to an image sensor irradiation test device and a test method. Background Art

[0002] Due to their numerous advantages, CMOS image sensors are widely used in imaging systems in the nuclear industry, aerospace, particle detection, and consumer electronics. However, when used in radiation environments such as nuclear radiation, space radiation, or particle detection, CMOS image sensors are susceptible to radiation damage from the space environment. With the increasing demand for high-precision photometry in my country's space missions, image sensors are required to possess characteristics such as low noise, low dark current, high quantum efficiency, and high photoelectric gain. To achieve optimal parameters and performance, CMOS image sensors require longer exposure times to detect information when operating at low temperatures, resulting in a significant increase in dark current.

[0003] Key optoelectronic parameters in CMOS image sensors include dark current and dark signal non-uniformity. Dark current refers to the electrons generated by thermal excitation and other factors in the sensor in the absence of light. Dark signal non-uniformity indicates the uneven response of each pixel under dark field conditions. Optoelectronic imaging devices used in space cameras are inevitably affected by high-energy particles (such as protons and electrons) and low temperatures in the space radiation environment during space imaging missions, inducing various radiation effects such as total ionization dose and displacement damage. Dark current is closely related to temperature. Displacement damage and total ionization dose effects increase the dark current and dark signal non-uniformity of the image sensor, resulting in a decrease in the effective resolution of the device and affecting the imaging performance of the optoelectronic imaging device. The defect properties induced by low-temperature radiation damage differ from those at room temperature. Therefore, research on radiation damage and testing at low temperatures is necessary. In recent years, researchers both domestically and internationally have conducted extensive experimental studies on radiation effects on CMOS image sensors. However, these studies mainly focus on CMOS image sensors irradiated at room temperature, and there are few methods for low-temperature irradiation experiments and tests. As a result, the evaluation of irradiation damage to image sensors working at low temperatures is insufficient, especially the lack of research on the parameter degradation laws of low-temperature working devices.

[0004] Studying the mechanisms and patterns of parameter degradation after low-temperature irradiation can assess the impact of low-temperature radiation damage on device performance, ultimately providing theoretical support for the application of CMOS image sensors at low temperatures. However, the difficulty lies in how to perform low-temperature irradiation and temperature control. Currently, studies on low-temperature radiation damage mainly use liquid nitrogen and dry ice to control temperature, but this method has large temperature control errors and is difficult to operate. Therefore, further research on low-temperature irradiation is needed to improve temperature control accuracy and reduce operational difficulty. Summary of the Invention

[0005] (1) Technical issues to be resolved

[0006] In order to solve at least one of the above-mentioned technical problems arising from the low-temperature irradiation damage test of CMOS image sensors in the prior art, an embodiment of the present invention provides an image sensor low-temperature irradiation test device and a test method. By setting up a heat dissipation device and a refrigeration plate, it can be ensured that the device can be irradiated at low temperatures and has a good temperature control effect, solving the problem of temperature fluctuation during traditional dry ice and liquid nitrogen irradiation. It has a wide range of applications, a simple method, and strong operability. At the same time, the refrigeration plate has a working mode of cooling on one side and dissipating heat on the other side. Good heat dissipation can ensure the refrigeration efficiency and effect of the refrigeration plate. The test device and method can quickly transfer the device to a vacuum temperature chamber for testing after irradiation, avoiding defect annealing caused by the device contacting room temperature.

[0007] (2) Technical solution

[0008] In response to the above technical problems, embodiments of the present invention provide an image sensor irradiation test device and a test method.

[0009] According to a first aspect of the present invention, an irradiation test device for an image sensor is provided, comprising: an irradiation room, an irradiation plate, a cooling plate, a heat sink, a programmable power supply, a cable, a vacuum incubator, a test board, a computer and a rubber stopper, wherein the irradiation plate, the cooling plate, the heat sink and the programmable power supply are located inside the irradiation room; the position between the irradiation plate and the cooling plate is used to place the image sensor to be tested; the programmable power supply is connected to the cooling plate and the heat sink respectively through cables, and is used to control the power on and off of the cooling plate and the heat sink; the side wall of the vacuum incubator includes a cable hole, the cable hole is used to allow the cable to pass through to connect the irradiated image sensor placed inside the vacuum incubator and the test board outside the vacuum incubator; the rubber stopper is used to seal the cable hole to keep the vacuum incubator at a stable temperature; and the computer is connected to the test board, and is used to control the test conditions and obtain test results.

[0010] In some exemplary embodiments, the cooling plate includes a cooling surface and a heat dissipation surface, wherein the cooling surface and the heat dissipation surface are arranged opposite to each other; and the cooling surface is used to fix and cool the image sensor to be tested.

[0011] According to a second aspect of the present invention, a radiation test method for an image sensor based on the above-mentioned device is provided, comprising: fixing the image sensor to be tested on an irradiation plate and a cooling plate; irradiating the image sensor to be tested at a preset temperature for a preset time to obtain an irradiated image sensor; transferring the irradiated image sensor to a vacuum temperature chamber; and testing the irradiated image sensor according to preset test conditions to obtain test data.

[0012] In some exemplary embodiments, irradiating the image sensor to be tested at a preset temperature for a preset time includes: utilizing irradiation particles in an irradiation room to vertically impinge on the image sensor to be tested; supplying power to a heat sink through a programmable power supply to put the heat sink in a working state; supplying power to a cooling plate through a programmable power supply to regulate the temperature of the image sensor to be tested to a preset temperature; allowing the image sensor to be tested to stand until the temperature of the image sensor to be tested reaches a stable state; and continuing to irradiate the image sensor to be tested for a preset time, stopping the irradiation, and obtaining the irradiated image sensor.

[0013] In some exemplary embodiments, during the process of transferring the irradiated image sensor to the vacuum oven, the programmable power supply is kept in the start state until the irradiated image sensor is transferred to the vacuum oven.

[0014] In some exemplary embodiments, testing the irradiated image sensor according to preset test conditions includes: using a cable to pass through a cable hole of a vacuum incubator to connect the irradiated image sensor placed inside the vacuum incubator and a test board outside the vacuum incubator; using a rubber plug to seal the cable hole to keep the vacuum incubator at a stable temperature; turning on the computer, and when the temperature stabilizes to a preset temperature, leaving the irradiated image sensor to stand until the temperature at the position of the irradiated image sensor stabilizes; adjusting the test parameters through the computer, waiting for the irradiated image sensor to enter a test state, collecting test data; and storing the test data in the computer.

[0015] In some exemplary embodiments, the test data includes variable temperature test data, wherein a test temperature of the variable temperature test is not higher than a preset irradiation temperature.

[0016] In some exemplary embodiments, the method further includes: performing a temperature rise annealing and a temperature rise annealing test on the irradiated image sensor according to a preset temperature gradient to obtain temperature rise annealing test data, wherein the temperature rise annealing test includes: performing a low-temperature test on the image sensor during the annealing process according to a preset interval time during each temperature rise annealing process, wherein the temperature of the low-temperature test is -20°C; and performing a variable temperature test on the image sensor after the temperature rise annealing after each temperature rise annealing process, wherein the temperature of the variable temperature test is lower than the corresponding annealing temperature.

[0017] In some exemplary embodiments, the method further includes: performing high-temperature annealing and high-temperature annealing testing on the image sensor after the temperature-raising annealing at a preset annealing temperature to obtain high-temperature annealing test data, wherein the high-temperature annealing test includes: performing a low-temperature test on the image sensor during the annealing process at a preset interval during each high-temperature annealing process; performing a variable temperature test on the image sensor after the high-temperature annealing after each high-temperature annealing process; and the temperature of the high-temperature annealing is not lower than 100°C.

[0018] In some exemplary embodiments, the method further includes: processing the test data using software in a computer to obtain parameter values ​​of the image sensor to be tested.

[0019] (3) Beneficial effects

[0020] It can be seen from the above technical solutions that the image sensor irradiation test device and test method provided by the embodiments of the present invention have at least the following beneficial effects:

[0021] (1) Through the setting of heat dissipation device and refrigeration plate, it can ensure that the device can perform low-temperature irradiation and have a good temperature control effect, which solves the problem of temperature fluctuation during traditional dry ice and liquid nitrogen irradiation. It has a wide range of applications, simple methods and strong operability.

[0022] (2) The refrigeration plate works in a cooling and heat dissipation mode. Good heat dissipation can ensure the cooling efficiency and effect of the refrigeration plate.

[0023] (3) This testing method can quickly transfer the device to a vacuum oven for testing after irradiation, avoiding defect annealing caused by the device being exposed to room temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above contents and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0025] Figure 1 The following schematically shows a structural diagram of an image sensor irradiation test device according to an embodiment of the present invention;

[0026] Figure 2 The following schematically shows a flow chart of an image sensor irradiation test method according to an embodiment of the present invention;

[0027] Figure 3 A schematic diagram of a process of irradiating an image sensor to be tested at a preset temperature for a preset time according to an embodiment of the present invention is shown;

[0028] Figure 4 A schematic diagram of a process for testing an irradiated image sensor according to preset test conditions according to an embodiment of the present invention is shown;

[0029] Figure 5 A schematic diagram illustrating a flow chart of a second image sensor irradiation test method according to an embodiment of the present invention is shown;

[0030] Figure 6 A schematic diagram illustrating a flow chart of a third image sensor irradiation test method according to an embodiment of the present invention is shown;

[0031] Figure 7 Schematically shows a low-temperature irradiation test and an overall test flow chart according to an embodiment of the present invention;

[0032] Figure 8 A schematic diagram showing a comparison of dark current distribution of an image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention is shown;

[0033] Figure 9 A schematic diagram showing a comparison of dark signal distribution of an image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention is shown; and

[0034] Figure 10 The following schematically shows the activation energy of the image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention, wherein: Figure 10 (a) schematically shows an activation energy diagram of an image sensor to be tested at room temperature according to an embodiment of the present invention; and Figure 10 (b) schematically shows the activation energy of the image sensor to be tested after low-temperature irradiation according to an embodiment of the present invention.

[0035] Reference numerals:

[0036] 1- irradiation room; 2- irradiation board; 3- refrigeration plate; 4- heat dissipation device; 5- programmable power supply; 6- cable; 7- vacuum oven; 71- cable hole; 8- test board; 9- computer; 10- rubber plug. DETAILED DESCRIPTION

[0037] To make the objectives, technical solutions, and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to specific embodiments and the accompanying drawings. It is apparent that the embodiments described are only a portion of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0038] Figure 1 The structure diagram of an image sensor irradiation test device according to an embodiment of the present invention is schematically shown.

[0039] like Figure 1As shown, an image sensor irradiation test device according to an embodiment of the present invention includes: an irradiation room 1, an irradiation plate 2, a cooling plate 3, a heat sink 4, a programmable power supply 5, a cable 6, a vacuum temperature chamber 7, a test board 8, a computer 9 and a rubber stopper 10, wherein the irradiation plate 2, the cooling plate 3, the heat sink 4 and the programmable power supply 5 are located inside the irradiation room 1; the position between the irradiation plate 2 and the cooling plate 3 is used to place the image sensor to be tested; the programmable power supply 5 is connected to the cooling plate 3 and the heat sink 4 respectively through the cable 6, and is used to control the power on and off of the cooling plate 3 and the heat sink 4; the side wall of the vacuum temperature chamber 7 includes a cable hole 71, the cable hole 71 is used to allow the cable 6 to pass through to connect the irradiated image sensor placed inside the vacuum temperature chamber 7 and the test board 8 outside the vacuum temperature chamber 7; the rubber stopper 10 is used to seal the cable hole 71 to keep the vacuum temperature chamber 7 at a stable temperature; and the computer 9 is connected to the test board 8 for controlling the test conditions and obtaining the test results.

[0040] In some exemplary embodiments, the cooling plate 3 includes a cooling surface and a heat dissipation surface, wherein the cooling surface and the heat dissipation surface are arranged opposite to each other, and good heat dissipation can ensure the cooling efficiency and effect of the cooling plate 3; and the cooling surface is used to fix and cool the image sensor to be tested.

[0041] Figure 2 The flowchart of an image sensor irradiation test method according to an embodiment of the present invention is schematically shown.

[0042] like Figure 1 As shown, an image sensor irradiation test method according to an embodiment of the present invention includes steps S110 to S140.

[0043] In step S110 , the image sensor to be tested is fixed on the irradiation plate 2 and the cooling plate 3 .

[0044] In step S120 , the image sensor to be tested is irradiated at a preset temperature for a preset time to obtain an irradiated image sensor.

[0045] In some exemplary embodiments, step S120 includes steps S121-S125, see Figure 3 .

[0046] In step S121 , irradiation particles in the irradiation room 1 are vertically incident on the image sensor to be tested.

[0047] In step S122 , power is supplied to the heat dissipation device 4 via the programmable power supply 5 so that the heat dissipation device 4 is in a working state.

[0048] In step S123 , the programmable power supply 5 supplies power to the cooling plate 3 to regulate the temperature of the image sensor to be tested to a preset temperature.

[0049] In step S124 , the image sensor to be tested is left to stand until the temperature of the image sensor to be tested reaches a stable state.

[0050] In step S125 , the image sensor to be tested is continuously irradiated for a preset time period, and then the irradiation is stopped to obtain the irradiated image sensor.

[0051] In step S130 , the irradiated image sensor is transferred to a vacuum oven 7 .

[0052] In some exemplary embodiments, during the process of transferring the irradiated image sensor to the vacuum oven 7 , the programmable power supply 5 is kept in the start state until the irradiated image sensor is transferred to the vacuum oven 7 .

[0053] In step S140 , the irradiated image sensor is tested according to preset test conditions to obtain test data.

[0054] In some exemplary embodiments, step S140 includes steps S141-S145, see Figure 4 .

[0055] In step S141 , the cable 6 is passed through the cable hole 71 of the vacuum oven 7 to connect the irradiated image sensor placed inside the vacuum oven 7 and the test board 8 outside the vacuum oven 7 .

[0056] In step S142 , the cable hole 71 is sealed with the rubber plug 10 to maintain the vacuum oven 7 at a stable temperature.

[0057] In step S143 , the computer 9 is turned on, and when the temperature stabilizes to a preset temperature, the irradiated image sensor is left to stand until the temperature at the position of the irradiated image sensor stabilizes.

[0058] In step S144, the computer 9 adjusts test parameters, such as an appropriate integration time, and the image sensor, after irradiation, enters a test state and collects test data. Optionally, the test data includes variable temperature test data, wherein the test temperature of the variable temperature test is not higher than the preset irradiation temperature.

[0059] In step S145 , the test data is stored in the computer 9 .

[0060] Figure 5 The flowchart of the second image sensor irradiation test method according to an embodiment of the present invention is schematically shown.

[0061] like Figure 5 As shown, the second image sensor irradiation test method according to the embodiment of the present invention is Figure 2 Based on the test method shown, step S150 is also included.

[0062] In step S150, the irradiated image sensor is subjected to a temperature ramp annealing and a temperature ramp annealing test according to a preset temperature gradient to obtain temperature ramp annealing test data, wherein the temperature ramp annealing test includes: performing a low-temperature test on the image sensor during the annealing process at a preset interval during each temperature ramp annealing process, wherein the temperature of the low-temperature test is -20°C; and performing a variable temperature test on the image sensor after the temperature ramp annealing after each temperature ramp annealing process, wherein the temperature of the variable temperature test is lower than the corresponding annealing temperature.

[0063] Figure 6 The flowchart of the third image sensor irradiation test method according to an embodiment of the present invention is schematically shown.

[0064] like Figure 6 As shown, the third image sensor irradiation test method according to the embodiment of the present invention is Figure 2 or Figure 5 Based on the test method shown, step S160 is also included.

[0065] In step S160, the image sensor after the temperature-raising annealing is subjected to high-temperature annealing and high-temperature annealing testing at a preset annealing temperature to obtain high-temperature annealing test data, wherein the high-temperature annealing test includes: performing a low-temperature test on the image sensor during the annealing process at a preset interval during each high-temperature annealing process; performing a variable temperature test on the image sensor after the high-temperature annealing after each high-temperature annealing process; and the temperature of the high-temperature annealing is not less than 100°C.

[0066] use Figure 2 、 Figure 5 or Figure 6 After the test data is obtained, the test method can also include

[0067] The test data is processed using the software in the computer 9 to obtain parameter values ​​of the image sensor to be tested.

[0068] For example, the low temperature irradiation test and testing of the Gense 400 back-illuminated CMOS image sensor is introduced as an example. The overall test flow chart is shown in Figure 7 , the specific steps are as follows:

[0069] Test preparation phase: Before starting cooling, power is supplied to the heat sink 4. The cooling plate 3 operates in a dual-mode cooling and heat dissipation mode. Good heat dissipation ensures the cooling efficiency and effectiveness of the cooling plate 3. The programmable power supply 5 is connected, the cooling plate 3 is turned on, and the photoelectric imaging device, which is in close contact with the cooling plate 3, begins to cool. The photoelectric imaging device is monitored in real time to ensure it is securely attached to the cooling plate 3, and a thermometer is used to measure its temperature in real time. The photoelectric imaging device is placed in the irradiation chamber, secured to the irradiation plate 2, and the programmable power supply 5 is connected to power the heat sink 4.

[0070] Cooling stage: turn on the programmable power supply 5 and turn on the refrigeration plate 3. When the temperature of the photoelectric imaging device is stable at -20°C, that is, the fluctuation range is less than ±0.1°C, let the photoelectric imaging device stand for 30 minutes to ensure that the temperature at the photoelectric imaging device is stable.

[0071] Irradiation: When the irradiation time reaches the specified time, the photoelectric imaging device is taken out and placed in the vacuum temperature box 7 before the refrigeration system is powered off to ensure that the photoelectric imaging device is kept at a low temperature after irradiation.

[0072] Testing phase: After irradiation, the photoelectric imaging device is placed in a vacuum oven 7 to maintain a low temperature. It is connected to a test board 8 via a cable 6, and the cable hole 71 is sealed with a rubber plug 10 to prevent air flow. Computer 9 is connected. When the temperature stabilizes to a preset level, the photoelectric imaging device is left to stand for 30 minutes to ensure temperature stability at the device location. The integration time and other configurations are adjusted using computer 9. Generally, a long exposure is used for low-temperature integration. This is because temperature suppresses dark signals. Short exposures do not easily produce images where grayscale values ​​increase with integration time. The specific exposure time should be determined based on the specific situation. Once the device enters the test state, continuous image acquisition is performed, and defect activation energy is determined through variable temperature testing. In principle, the variable temperature test temperature should not be higher than the irradiation temperature. Images captured by the test system are stored in computer 9. Software installed on computer 9 is used to rapidly process the captured images to obtain values ​​for key device parameters, such as dark current and dark signal non-uniformity, allowing for rapid assessment of the device's radiation damage. Figure 8 A schematic diagram showing a comparison of dark current distribution of an image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention is shown; Figure 9 A schematic diagram showing a comparison of dark signal distribution of an image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention is shown; and Figure 10 The following schematically shows the activation energy of the image sensor to be tested after irradiation at room temperature and low temperature according to an embodiment of the present invention, wherein: Figure 10 (a) schematically shows an activation energy diagram of an image sensor to be tested at room temperature according to an embodiment of the present invention; and Figure 10 (b) schematically shows the activation energy of the image sensor to be tested after low-temperature irradiation according to an embodiment of the present invention. Specific values ​​of the main test parameters of low-temperature irradiation and room-temperature irradiation are shown in Table 1.

[0073] Table 1 Main test parameters of low temperature irradiation and room temperature irradiation

[0074]

[0075] e. Annealing stage: Set the temperature gradient of 10°C according to the irradiation temperature, and then perform high-temperature annealing after room temperature annealing. After each annealing, perform low-temperature and variable-temperature tests to obtain the low-temperature radiation damage and annealing rules of the device.

[0076] The above specific embodiments further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An irradiation test device for an image sensor, characterized in that: include: Irradiation room, irradiation board, refrigeration plate, heat dissipation device, programmable power supply, cable, vacuum oven, test board, computer and rubber stopper, Wherein, the irradiation plate, the cooling plate, the heat dissipation device and the programmable power supply are located inside the irradiation room; The position between the irradiation plate and the cooling plate is used to place the image sensor to be tested; The programmable power supply is connected to the refrigeration plate and the heat dissipation device respectively through the cable, and is used to control the power on and off of the refrigeration plate and the heat dissipation device; The side wall of the vacuum oven includes a cable hole, wherein the cable hole is used to pass a cable to connect the irradiated image sensor placed inside the vacuum oven and the test board outside the vacuum oven; The rubber plug is used to seal the cable hole so that the vacuum oven maintains a stable temperature; as well as The computer is connected to the test board and is used to control test conditions and obtain test results.

2. The device according to claim 1, characterized in that The refrigeration plate includes a refrigeration surface and a heat dissipation surface. Wherein, the cooling surface and the heat dissipation surface are arranged opposite to each other; and The cooling surface is used to fix the image sensor to be tested.

3. A method for testing an image sensor under irradiation test based on the device according to any one of claims 1 or 2, characterized in that: include: Fixing the image sensor to be tested on the irradiation plate and the cooling plate; irradiating the image sensor to be tested at a preset temperature for a preset time to obtain an irradiated image sensor; transferring the irradiated image sensor to a vacuum oven; as well as The irradiated image sensor is tested according to preset test conditions to obtain test data.

4. The method according to claim 3, characterized in that The irradiating the image sensor to be tested at a preset temperature for a preset time comprises: Utilize the irradiation particles in the irradiation room to vertically impinge on the image sensor to be tested; Powering the heat dissipation device through a programmable power supply to put the heat dissipation device into working state; The programmable power supply supplies power to the cooling chip to regulate the temperature of the image sensor to be tested to a preset temperature; leaving the image sensor to be tested still until the temperature of the image sensor to be tested reaches a stable state; and The image sensor to be tested is continuously irradiated for a preset time period, and the irradiation is stopped to obtain an irradiated image sensor.

5. The method according to claim 3, characterized in that During the process of transferring the irradiated image sensor to the vacuum oven, the programmable power supply is kept in a start state until the irradiated image sensor is transferred to the vacuum oven.

6. The method according to claim 3, characterized in that The testing of the irradiated image sensor according to the preset test conditions includes: Using a cable to pass through the cable hole of the vacuum incubator to connect the irradiated image sensor placed inside the vacuum incubator and the test board outside the vacuum incubator; Using a rubber plug to seal the cable hole to keep the vacuum oven at a stable temperature; Turning on the computer, when the temperature stabilizes to a preset temperature, leaving the irradiated image sensor to stand until the temperature at the position of the irradiated image sensor stabilizes; Adjust the test parameters by computer, and the image sensor after irradiation enters the test state to collect test data; and The test data is stored in the computer.

7. The method according to claim 6, characterized in that The test data includes variable temperature test data, wherein the test temperature of the variable temperature test is not higher than the preset irradiation temperature.

8. The method according to claim 3, characterized in that Also includes: Performing a temperature-raising annealing and a temperature-raising annealing test on the irradiated image sensor according to a preset temperature gradient to obtain temperature-raising annealing test data, Wherein, the temperature rising annealing test includes: During each annealing process, a low-temperature test is performed on the image sensor during the annealing process at a preset interval, wherein the temperature of the low-temperature test is -20°C; and After each temperature-raising annealing, a variable temperature test is performed on the image sensor after the temperature-raising annealing, wherein the temperature of the variable temperature test is lower than the corresponding annealing temperature.

9. The method according to claim 8, characterized in that Also includes: The image sensor after the temperature rise annealing is subjected to high temperature annealing and high temperature annealing test according to the preset annealing temperature to obtain high temperature annealing test data. Wherein, the high temperature annealing test includes: During each high-temperature annealing process, a low-temperature test is performed on the image sensor during the annealing process at a preset interval; After each high temperature annealing, the image sensor after high temperature annealing is subjected to a variable temperature test; The temperature of the high temperature annealing is not less than 100°C.

10. The method according to any one of claims 3, 8 or 9, characterized in that: Also includes: The test data is processed using software in the computer to obtain parameter values ​​of the image sensor to be tested.

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