Two-dimensional material resistor and method for adjusting two-dimensional material resistor

Abstract

The invention relates to the technical field of two-dimensional material resistors, and discloses a two-dimensional material resistor and a method for adjusting the two-dimensional material resistor, the two-dimensional material resistor comprises a positive electrode, a negative electrode and a plurality of functional areas; the positive electrode and the negative electrode are oppositely arranged, the multiple functional areas are located between the positive electrode and the negative electrode, and the multiple functional areas are sequentially arranged in the length direction of the two-dimensional material resistor or the multiple functional areas are sequentially arranged in the width direction of the two-dimensional material resistor; the functional area comprises a plurality of cellular areas, the cellular area in at least one functional area is provided with at least one resistance adjusting hole, and the sizes of the resistance adjusting holes in different functional areas are different. According to the invention, the sheet resistance of each functional region can be differentiated, and the resistance differentiation function of different functional regions in the same two-dimensional material resistor is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of two-dimensional material resistors, and in particular to a two-dimensional material resistor and a method for adjusting the two-dimensional material resistor. Background Art

[0002] Two-dimensional materials are usually composed of atomic layers or a few atomic layers. They have good flexibility, lightness, and high sensitivity. They can adapt to surfaces of various shapes, such as wearable devices, curved electronic components, or wind turbine rotor surfaces. They are widely used in high-precision instrument circuit amplifiers, two-dimensional material capacitors, two-dimensional material resistors, heating and heat dissipation, etc. Two-dimensional material resistors generate heat when electricity is applied, and due to their lightness and thinness, they can quickly dissipate the heat or concentrate the heat in a specific area.

[0003] In some application scenarios, different areas of the same product may have different requirements for the speed or amount of heat generation. For example, in a low-temperature environment, only part of the fan rotor surface may be frosted and require a higher temperature, while the other part of the surface is not frosted and does not require a very high temperature. However, the square resistance of the same two-dimensional material resistor is uniform and constant, which makes it difficult to meet the requirements of different resistance conditions in the coverage area, such as the requirements of differentiated power density or differentiated heating areas. Summary of the invention

[0004] In view of this, the present invention provides a two-dimensional material resistor and a method for adjusting the two-dimensional material resistor to achieve the function of differentiating the resistance of different functional areas in the same two-dimensional material resistor.

[0005] In the first aspect, the present invention provides a two-dimensional material resistor, which includes a positive electrode, a negative electrode and multiple functional areas; the positive electrode and the negative electrode are arranged opposite to each other, the multiple functional areas are located between the positive electrode and the negative electrode, the multiple functional areas are arranged in sequence along the length direction of the two-dimensional material resistor, or the multiple functional areas are arranged in sequence along the width direction of the two-dimensional material resistor; the functional area includes multiple cell areas, and the cell area within at least one functional area is provided with at least one resistance adjustment hole, and the sizes of the resistance adjustment holes in different functional areas are different.

[0006] The two-dimensional material resistor provided by the present invention extends the adjustment of the unit cell form square resistance to the adjustment of the two-dimensional material resistor through the integration concept, and opens a resistance adjustment hole in the unit cell area of ​​at least one functional area, which can reduce the area of ​​the two-dimensional material film between the electrodes and increase the resistance value corresponding to the functional area. At the same time, by adjusting the size of the resistance adjustment hole, the square resistance of each functional area can be differentiated, realizing the function of different resistances of different functional areas in the same two-dimensional material resistor.

[0007] In an optional embodiment, in the length direction or width direction of the two-dimensional material resistor, the sizes of the resistance adjustment holes in the multiple functional areas increase gradually.

[0008] In this embodiment, the sizes of the resistance adjustment holes in multiple functional areas increase gradually in the length direction or width direction of the two-dimensional material resistor, which can change the resistance gradient corresponding to the multiple functional areas and improve the applicability of the two-dimensional material resistor in application scenarios that require resistance change.

[0009] In an optional implementation, the plurality of resistance adjustment holes in the functional area are arranged in a matrix form.

[0010] In an optional implementation, the shape of the cell region and the shape of the resistance adjustment hole are both square, the number of the resistance adjustment hole in the cell region is one, and the side length of the cell region and the spacing between two adjacent resistance adjustment holes are determined by the following formula:

[0011]

[0012] Among them, a represents the side length of the cell area, b represents the distance between two adjacent resistance adjustment holes, α represents the linear relationship between the square resistance before and after adjustment, R l0 Represents the initial square resistance of the functional area, R li represents the target resistance of the functional area, β represents the opening limit, and γ represents the test constant.

[0013] In an optional implementation, the side length of the cell region ranges from 1.5 mm to 5 mm.

[0014] In this embodiment, the side length of the cell region is limited to a range of 1.5 mm to 5 mm. The square cells are arranged relatively regularly on the plane, which can better ensure the heating uniformity of the two-dimensional material resistor. Moreover, this range makes it easier to ensure the shape and size accuracy of the cells during the manufacturing process, reduce manufacturing defects, and improve production efficiency and product quality.

[0015] In an optional implementation, the shape of the cell region is triangular or hexagonal, and the shape of the resistance adjustment hole is triangular or hexagonal.

[0016] In an optional implementation, when the shape of the resistance adjustment hole is triangular, the number of the resistance adjustment holes in the cell region is at least two.

[0017] In an optional embodiment, the material of the two-dimensional material resistor includes one or more of nickel, chromium, copper, graphene, graphite and carbon conductive ink.

[0018] In a second aspect, the present invention provides a method for adjusting the resistance of a two-dimensional material, the method comprising: obtaining an initial square resistance of an original two-dimensional material resistor and a target square resistance of each functional area, wherein the original two-dimensional material resistor includes multiple functional areas; based on the initial square resistance and the target square resistance of the target functional area, determining the size of a cell area within the target functional area, the spacing between resistance adjustment holes in two adjacent cell areas, and the size of the resistance adjustment holes, wherein the target functional area is a functional area with different target resistance and initial square resistance among multiple functional areas; based on the size of the cell area, the spacing between resistance adjustment holes in two adjacent cell areas, and the size of the resistance adjustment holes, determining a processing layout, wherein the processing layout is used to characterize the positions of multiple resistance adjustment holes in the target functional area; based on the processing layout, controlling a laser cutting device to form multiple resistance adjustment holes on the target functional area to obtain the two-dimensional material resistor of the above-mentioned first aspect or any corresponding embodiment thereof.

[0019] In an optional implementation, before obtaining the initial sheet resistance of the original two-dimensional material resistor and the target sheet resistance of each functional area, the method further includes: determining the initial sheet resistance of the original two-dimensional material resistor by a sheet resistance tester. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the related technologies, the drawings required for use in the specific embodiments or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 is a schematic structural diagram of a two-dimensional material resistor according to an embodiment of the present invention;

[0022] Figure 2 is a schematic structural diagram of another two-dimensional material resistor according to an embodiment of the present invention;

[0023] Figure 3 is a schematic structural diagram of another two-dimensional material resistor according to an embodiment of the present invention;

[0024] Figure 4 is a schematic structural diagram of another two-dimensional material resistor according to an embodiment of the present invention;

[0025] Figure 5 is a schematic diagram of a cell region and a resistance adjustment hole according to an embodiment of the present invention;

[0026] Figure 6 is a schematic diagram of another cell region and a resistance adjustment hole according to an embodiment of the present invention;

[0027] Figure 7 is a schematic diagram of another cell region and a resistance adjustment hole according to an embodiment of the present invention;

[0028] Figure 8 is a schematic structural diagram of an original two-dimensional material resistor according to an embodiment of the present invention;

[0029] Fig. 9 is a schematic diagram of the positional relationship between a cell region and a functional region according to an embodiment of the present invention;

[0030] Fig.10 It is a flow chart of a method for adjusting the resistance of a two-dimensional material according to an embodiment of the present invention.

[0031] 110, positive electrode; 120, negative electrode; 131, first functional area; 132, second functional area; 133, third functional area; 134, cell area; 135, resistance adjustment hole. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0033] Two-dimensional materials refer to materials in which electrons can only move freely in two dimensions at a non-nanoscale (1nm to 100nm). Two-dimensional materials can be graphene, graphite, or sputtered nickel-chromium materials. Due to their special two-dimensional structure, resistors prepared based on two-dimensional materials have the advantages of good flexibility, lightness, and high sensitivity. They can be widely used in various fields such as high-precision instrument circuit amplifiers, two-dimensional material capacitors, two-dimensional material heating, and heat dissipation.

[0034] In some application scenarios, different areas of the same product may have different requirements for the speed or amount of heat generation, that is, the resistance in different areas of the same two-dimensional resistor needs to be differentiated to meet the needs of different resistance working conditions.

[0035] For example, in a low-temperature environment, only a portion of the fan rotor surface may be frosted. At this time, the frosted area needs to be heated with high intensity and the unfrosted area needs to be heated with low intensity. The corresponding two-dimensional material resistor has a smaller resistance in the frosted area and a larger resistance in the unfrosted area.

[0036] For another example, in a pressure sensor, if different regions of a two-dimensional material resistor have different resistances, when pressure is applied, the resistances of different regions change to different degrees. By detecting the changes in resistances of these different regions, the magnitude and distribution of pressure can be measured more accurately. For gas sensors, the differentiated resistance values ​​of two-dimensional material resistors can produce different resistance responses to gases of different concentrations, thereby achieving more accurate detection of gas concentrations.

[0037] For another example, in some special electronic circuits, such as signal conditioning circuits or power distribution circuits in analog circuits, the input power can be distributed to different branches in a certain proportion according to the resistance values ​​of differentiated two-dimensional material resistors in different areas, thereby achieving a more flexible power distribution function.

[0038] However, for the area covered by the two-dimensional material resistor, the square resistance in the same piece of two-dimensional material resistor is uniform, that is, the resistance is constant, which is difficult to meet the requirements under different resistance conditions in the coverage area.

[0039] In view of this, the present invention provides a two-dimensional material resistor, which divides the two-dimensional material resistor into multiple functional areas, and opens resistance adjustment holes in each functional area based on the cell area, which can reduce the area of ​​the two-dimensional material film between the electrodes corresponding to each functional area, thereby changing the initial square resistance of each functional area. At the same time, by adjusting the size of the resistance adjustment hole, the square resistance of each functional area can be differentiated, realizing the function of different resistances of different functional areas in the same two-dimensional material resistor.

[0040] The resistance of the two-dimensional material provided by the present invention is described in detail below with reference to the accompanying drawings.

[0041] For example, Figures 1 to 4 As shown, the two-dimensional material resistor includes a positive electrode 110, a negative electrode 120 and multiple functional regions.

[0042] The positive electrode 110 and the negative electrode 120 are arranged opposite to each other, and the multiple functional areas are located between the positive electrode 110 and the negative electrode 120. The multiple functional areas can be as follows: Figure 1 and Figure 3 As shown in FIG. 1 , the two-dimensional material resistor is arranged in sequence along the length direction (the direction of the X axis in the figure), and multiple functional areas can also be arranged as shown in FIG. Figure 2 and Figure 4 As shown, they are arranged in sequence along the width direction of the two-dimensional material resistor (the direction of the Y axis in the figure).

[0043] Specifically, when multiple functional areas are arranged in sequence along the length direction of the two-dimensional material resistor, the multiple functional areas are in a parallel relationship; when multiple functional areas are arranged in sequence along the width direction of the two-dimensional material resistor, the multiple functional areas are in a series relationship. The arrangement of the multiple functional areas can be determined according to the working conditions.

[0044] It should be noted that Figures 1 to 4 Taking the number of functional areas as 3 as an example, the multiple functional areas are specifically the first functional area 131, the second functional area 132 and the third functional area 133, but not limited thereto. For example, the number of functional areas can be 2, 5 or 6, etc., and the number of functional areas can be adjusted by the designer according to the actual needs of the application scenario.

[0045] Specifically, Figure 3 and Figure 4 As shown, the functional area includes a plurality of cell areas 134 , at least one cell area 134 in at least one functional area is provided with at least one resistance adjustment hole 135 , and the sizes of the resistance adjustment holes 135 in different functional areas are different.

[0046] That is, among the multiple functional areas, resistance adjustment holes 135 may be set in the cell area 134 of only one functional area (for example, the first functional area 131), or resistance adjustment holes 135 may be set in the cell areas 134 of any two functional areas (for example, the first functional area 131 and the third functional area 133), or resistance adjustment holes 135 may be set in the cell areas 134 of each functional area.

[0047] During operation, the positive electrode 110, the negative electrode 120 and multiple functional areas form a closed loop, and the multiple functional areas have a heating effect after current is passed through them. The present invention can adjust the square resistance of each functional area by opening holes, and by differentiating the size of the holes in each functional area, the square resistance of the functional area can be differentiated, thereby differentiating the resistance of different functional areas in the same two-dimensional material resistor.

[0048] Specifically, the cell region 134 is a basic unit for constructing a two-dimensional material resistor structure, and is arranged and combined on the plane of the functional area according to a preset rule to form a surface structure of the functional area. Figure 3 and Figure 4 As shown, the multiple cellular regions 134 of each functional area are distributed in a matrix form, and two adjacent cellular regions 134 are connected to each other, that is, there is no gap between two adjacent cellular regions 134 .

[0049] The cell region 134 is the basis for realizing surface resistance adjustment. The surface resistance is related to the electrical characteristics of the cell region 134. By setting the resistance adjustment hole 135 in the cell region 134, the conductive path in the cell region 134 can be changed, which is equivalent to changing the effective cross-sectional area of ​​the conductive material. The change in the cross-sectional area will cause the change in resistance, thereby realizing the adjustment of the resistance and achieving the purpose of changing the resistance value of the two-dimensional material resistor.

[0050] Furthermore, in the process of changing the resistance value, the sizes of the resistance adjustment holes 135 in different functional areas are made different, so that the effective cross-sectional areas of each functional area can be made different, thereby differentiating the resistance of different functional areas in the same two-dimensional material resistor.

[0051] Specifically, according to the basic theoretical formula of resistors, the resistance of a resistor is proportional to the distance between the electrodes and inversely proportional to the cross-sectional area of ​​the resistor. In other words, when other factors such as the cross-sectional area remain unchanged, the larger the distance between the electrodes, the larger the resistance of the resistor; when other factors such as the distance between the electrodes remain unchanged, the smaller the cross-sectional area, the larger the resistance of the resistor. Therefore, graphical processing (opening holes) of the two-dimensional material resistor can reduce the area of ​​the two-dimensional material film between the electrodes, thereby increasing the resistance of the two-dimensional material resistor. At the same time, the larger the size of the opening, the smaller the cross-sectional area of ​​the functional area, and the larger the resistance corresponding to the functional area.

[0052] by Figure 1 and Figure 2 For example, resistance adjusting holes 135 are provided in the three functional areas, and the size of the resistance adjusting hole 135 in the first functional area 131 is larger than the size of the resistance adjusting hole 135 in the second functional area 132, and the size of the resistance adjusting hole 135 in the second functional area 132 is larger than the size of the resistance adjusting hole 135 in the third functional area 133. At this time, the resistance R1 corresponding to the first functional area is larger than the resistance R2 corresponding to the second functional area, and the resistance R2 corresponding to the second functional area is larger than the resistance R3 corresponding to the third functional area, that is, R1>R2>R3.

[0053] Moreover, since each functional area of ​​the two-dimensional material resistor has a resistance adjustment hole 135, the resistance corresponding to each functional area is greater than the initial resistance R0 of the two-dimensional material resistor, that is, R1>R2>R3>R0. The initial resistance is the resistance value of the two-dimensional material resistor before the hole is opened.

[0054] The two-dimensional material resistor provided by the present invention extends the adjustment of the unit cell form square resistance to the adjustment of the two-dimensional material resistor through the integration concept, and opens a resistance adjustment hole in the unit cell area of ​​at least one functional area, which can reduce the area of ​​the two-dimensional material film between the electrodes and increase the resistance value corresponding to the functional area. At the same time, by adjusting the size of the resistance adjustment hole, the square resistance of each functional area can be differentiated, realizing the function of different resistances of different functional areas in the same two-dimensional material resistor.

[0055] The present embodiment does not limit the shape of the cell region 134 and the shape of the resistance adjustment hole 135. For example, the shape of the cell region 134 can be as follows: Figure 5 As shown, it is a square, but it can also be Figure 6 As shown in the figure, it is a triangle, and it can also be Figure 7 Correspondingly, the resistance adjustment hole 135 can also be as shown in FIG. Figure 5 As shown in square Figure 6 As shown in triangle or Figure 7 Shown as a hexagon.

[0056] When resistance adjustment holes 135 of different shapes or sizes are opened in cell regions 134 of different shapes and sizes, factors such as the internal current path length and cross-sectional area are different, and the degree of influence on the adjustment resistance is different. Designers can select the shape of the cell region 134 and the resistance adjustment hole 135 in each functional area, as well as the size of the cell region 134 and the resistance adjustment hole 135 in each functional area according to needs.

[0057] Specifically, when the shape of the resistance adjustment hole is triangular, the number of resistance adjustment holes in the cell region is at least two. A single triangular resistance adjustment hole may cause a great change in the local current density in the cell region, resulting in uneven resistance distribution. When there are at least two triangular resistance adjustment holes, these resistance adjustment holes can be reasonably arranged (such as symmetrically arranged) to make the current distribution in the cell region more uniform, thereby improving the resistance uniformity of the two-dimensional material resistance after adjustment.

[0058] The following takes the case where the shape of the cell region and the shape of the resistance adjustment hole are both square as an example to explain the size of the cell region and the size of the resistance adjustment hole in the functional area.

[0059] Specifically, Figures 1 to 4 As shown, the shape of the cell region 134 and the shape of the resistance adjustment hole 135 in each functional area are both square, the number of the resistance adjustment hole 135 in the cell region 134 is one, and the multiple resistance adjustment holes 135 are arranged in a matrix form. The side length of the cell region 134 in each functional area and the distance between two adjacent resistance adjustment holes can be adjusted based on formula (1).

[0060]

[0061] Wherein, a represents the side length of the cell region 134, b represents the spacing between two adjacent resistance adjustment holes, and α represents the linear relationship between the square resistance before and after adjustment. α can be determined by testing. l0 Represents the initial square resistance of the functional area, R li It represents the target square resistance of the functional area, β represents the opening limit, which can be determined by testing, and γ represents the test constant, which can be determined by fitting the test data.

[0062] Specifically, the initial square resistance R l0 It refers to the actual sheet resistance of the two-dimensional material resistor before the functional area is opened. It can be determined by a sheet resistance tester. liIt refers to the sheet resistance that needs to be achieved after the functional area of ​​the two-dimensional material resistor is opened. The target sheet resistance can be determined by the designer according to actual needs. The functional area is any one of the multiple functional areas. For example, the functional area can be the first functional area 131, the second functional area 132 or the third functional area 133.

[0063] Exemplarily, the target square resistance may range from 1 times to 10 times the initial square resistance. For example, the target square resistance may be 1 times, 2.5 times, 4 times, 6 times, 8 times, or 10 times the initial square resistance.

[0064] Exemplarily, in the length direction or width direction of the two-dimensional material resistor, the sizes of the resistance adjustment holes 135 in multiple functional areas are increased. That is, the sizes of the resistance adjustment holes 135 in each functional area are different, and the difference between the resistance adjustment holes 135 in two adjacent functional areas is a preset difference. The preset difference can be determined by the designer according to the requirements.

[0065] In this embodiment, the sizes of the resistance adjustment holes 135 in multiple functional areas increase gradually in the length direction or width direction of the two-dimensional material resistor, which can change the resistance gradient corresponding to the multiple functional areas and improve the applicability of the two-dimensional material resistor in application scenarios that require resistance change.

[0066] In some embodiments, the side length of the cellular region 134 can range from 1.5 mm to 5 mm, that is, the side length of the cellular region 134 can be any value between 1.5 mm and 5 mm, for example, the side length of the cellular region 134 is 1.5 mm, 2 mm, 2.5 mm, 4 mm or 5 mm.

[0067] In this embodiment, the side length of the cell region 134 is limited to a range of 1.5 mm to 5 mm. The square cells are arranged relatively regularly on the plane, which can better ensure the heating uniformity of the two-dimensional material resistor. Moreover, this range makes it easier to ensure the shape and size accuracy of the cells during the manufacturing process, reduce manufacturing defects, and improve production efficiency and product quality.

[0068] For example, the side length of the cell region 134 may be Figure 5 As shown in a, the spacing between two adjacent resistance adjustment holes can be Figure 5 As shown in b, if the center of the resistance adjustment hole 135 coincides with the center of the cell region, the side length of the resistance adjustment hole 135 is (ab). a in different functional areas can be the same or different, and b in different functional areas is different, so that the resistance corresponding to each functional area is differentiated.

[0069] Specifically, after determining the side length of the cell region 134, the number of the cell regions 134 in the length direction of the functional area, that is, the number of the cell regions in each row in the functional area, can be determined according to formula (2).

[0070]

[0071] Among them, S L represents the number of cell regions 134 distributed in the length direction of the functional area, L i Indicates the length of the functional area. The length of the functional area can be Figure 8 L shown i When the functional area is the first functional area 131, L i L1 represents the length of the first functional area; when the functional area is the second functional area 132, L i L2 represents the length of the second functional area; when the functional area is the third functional area 133, L i L3, L3 represents the length of the third functional area.

[0072] Specifically, if the length L i If it cannot be divided by the side length a of the cell region 134, the quotient is determined as the number of cell regions 134 distributed in the length direction, and the length obtained by dividing the remainder into two is set on both sides of the two cell regions 134 at the edge in the length direction. Fig. 9 As shown, the sum of the first length L4 and the second length L5 is the remainder of (L1÷a).

[0073] After the side length of the cell region 134 is determined, the number of the cell regions 134 in the width direction of the functional area, that is, the number of the cell regions in each column in the functional area, can be determined according to formula (3).

[0074]

[0075] Among them, S W represents the number of cell regions 134 distributed in the width direction of the functional area, W i Indicates the width of the functional area. The width of the functional area can be Figure 8 W shown i When the functional area is the first functional area 131, W i is W1, W1 represents the width of the first functional area; when the functional area is the second functional area 132, W i is W2, W2 represents the width of the second functional area; when the functional area is the third functional area 133, W i W3, W3 represents the width of the third functional area.

[0076] Specifically, if the width dimension W iIf it cannot be divided by the side length a of the cell region 134, the quotient is determined as the number of cell regions 134 distributed in the width direction, and the width obtained by dividing the remainder into two is set on both sides of the two cell regions 134 at the edge in the width direction. Fig. 9 As shown, the sum of the fourth width W4 and the fifth width W5 is the remainder of (W1÷a).

[0077] After determining the target square resistance of the functional area, the resistance corresponding to the functional area can be determined according to formula (4).

[0078]

[0079] Where R represents the resistance of the functional area, R l Indicates the target square resistance of the functional area.

[0080] When the functional area is the first functional area 131, R is R1, R1 represents the resistance of the first functional area, R li For R l1 , R l1 represents the target square resistance of the first functional area; when the functional area is the second functional area 132, R is R2, R2 represents the resistance of the second functional area, R li For R l2 , R l2 represents the target square resistance of the second functional area; when the functional area is the third functional area 133, R is R3, R3 represents the resistance of the third functional area, R li For R l3 , R l3 Indicates the target square resistance of the third functional area.

[0081] Furthermore, after determining the resistance corresponding to each functional area, if multiple functional areas are connected in parallel, the reciprocal of the total resistance of the two-dimensional material is the sum of the reciprocals of the resistances corresponding to each functional area; if multiple functional areas are connected in series, the total resistance of the two-dimensional material is the sum of the resistances corresponding to each functional area.

[0082] Specifically, taking the number of functional areas as 3 as an example, when multiple functional areas are connected in parallel, the total resistance value of the two-dimensional material resistor can be determined by the following formula (5); when multiple functional areas are connected in series, the total resistance value of the two-dimensional material resistor can be determined by the following formula (6).

[0083]

[0084] Rtotal=R1+R2+R3(6)

[0085] Wherein, Rtotal represents the total resistance of the two-dimensional material resistor.

[0086] The present invention does not limit the type of two-dimensional material resistor. For example, the two-dimensional material resistor can be a metal resistor. In this case, the material of the two-dimensional material resistor includes one or more of nickel, chromium or copper. The two-dimensional material resistor can also be a carbon material system resistor. In this case, the material of the two-dimensional material resistor includes one or more of graphene, graphite and carbon conductive ink.

[0087] In this embodiment, a method for adjusting the resistance of a two-dimensional material is also provided, which can be used for an apparatus for adjusting the resistance of a two-dimensional material. The apparatus for adjusting the resistance of a two-dimensional material can be a computer or a tablet computer, etc. Fig.10 FIG. 1 is a flow chart of a method for adjusting the resistance of a two-dimensional material according to an embodiment of the present invention. Fig.10 As shown, the method comprises the following steps:

[0088] Step S1001, obtaining the initial sheet resistance of the original two-dimensional material resistor and the target sheet resistance of each functional area.

[0089] Among them, the original two-dimensional material resistor includes multiple functional areas.

[0090] Specifically, Figure 8 As shown, the original two-dimensional material resistor can be a two-dimensional material resistor without holes.

[0091] Exemplarily, the initial square resistance of the original two-dimensional material resistor can be determined by a square resistance tester, and the square resistance uniformity of the original two-dimensional material resistor is within ±5%.

[0092] Exemplarily, the target square resistance can be determined by the staff according to the needs, and the initial square resistance and the target square resistance can be input by the user into the device for adjusting the resistance of the two-dimensional material through a human-computer interaction device (such as a mouse, keyboard or touch screen, etc.), so that the device for adjusting the resistance of the two-dimensional material can obtain the initial square resistance and the target square resistance.

[0093] Step S1002 , based on the initial square resistance and the target square resistance of the target functional area, determine the size of the cell region in the target functional area, the spacing between the resistance adjustment holes in two adjacent cell regions, and the size of the resistance adjustment holes.

[0094] The target functional area is a functional area with different target resistance and initial square resistance among the multiple functional areas. That is, the target functional area is a functional area to be opened among the multiple functional areas.

[0095] Specifically, when the shape of the cell area and the shape of the resistance adjustment hole are square, after determining the initial square resistance and the target square resistance, the size of the cell area in the target functional area and the spacing between the resistance adjustment holes in two adjacent cell areas can be determined by the above formula (1). The side length of the cell area ranges from 1.5 mm to 5 mm.

[0096] If the shape of the cellular region in the target functional area and the shape of the resistance adjustment hole are square, and the center of the cellular region coincides with the center of the resistance adjustment hole, then the size of the resistance adjustment hole is (ab).

[0097] Step S1003 , determining a processing layout based on the size of the cell region, the spacing between the resistance adjustment holes in two adjacent cell regions, and the size of the resistance adjustment holes.

[0098] The processing layout is used to characterize the positions of multiple resistance adjustment holes in the target functional area.

[0099] Specifically, after determining the size of the cell area, the spacing between the resistance adjustment holes in two adjacent cell areas, and the size of the resistance adjustment holes, the number of cell areas in each row of the target functional area can be determined based on formula (2), and the number of cell areas in each column of the target functional area can be determined based on formula (3). Then, based on the spacing between the resistance adjustment holes in two adjacent cell areas and the size of the resistance adjustment holes, the positions of multiple resistance adjustment holes can be set to obtain a processing layout.

[0100] For example, the processing layout can be determined by two-dimensional drawing software (such as CAD, etc.), and the processing layout can be as follows: Figure 1 Specifically, in CAD, the processing layout can be obtained by taking the functional area as the boundary and performing operations such as offset and array according to the size of the cell area.

[0101] Step S1004, based on the processing layout, controlling the laser cutting device to form a plurality of resistance adjustment holes on the target functional area to obtain a two-dimensional material resistor.

[0102] The two-dimensional material resistor is the two-dimensional material resistor provided by any of the above embodiments.

[0103] Specifically, after determining the processing layout, a laser processing path can be generated, and then the laser cutting device can be controlled to move along the laser processing path to cut holes in the target functional area. Figure 1 or Figure 2 The two-dimensional material resistance shown is the conversion of the original two-dimensional material resistance into the two-dimensional material resistance.

[0104] During the cutting process, the product shape remains consistent with the designed shape, and the size difference between the processing layout and the actual product during the cutting process does not exceed the tolerance range of 0.5×b.

[0105] The method for adjusting the resistance of a two-dimensional material provided in this embodiment is based on the idea of ​​integration, and applies the unit cell square resistance adjustment to the two-dimensional material square resistance adjustment. By opening holes in the unit cell area, not only can the square resistance of the two-dimensional material be fine-tuned, but also the resistance of a two-dimensional material with low square resistance can be adjusted to the resistance of a two-dimensional material with high square resistance. The resistance adjustment range can reach 1000% of the original square resistance, or even higher. At the same time, by adjusting the size of the resistance adjustment hole, the square resistance of each functional area can be differentiated, realizing the function of differentiating the resistance of different functional areas in the same two-dimensional material resistor.

[0106] In this embodiment, the resistance of the same square two-dimensional material resistor is adjusted in different regions, which can achieve different current density distribution adjustment in the same resistor and different power density distribution adjustment in the same square two-dimensional material resistor.

[0107] After the sheet resistance of the two-dimensional material is adjusted in the present invention, the data is more accurate. Under ideal manufacturing process and cutting environment, the error between the adjusted sheet resistance and the theoretical value is within 5%.

[0108] The embodiment of the present invention also provides a computer device, which includes: one or more processors, a memory, and an interface for connecting various components, including a high-speed interface and a low-speed interface. The various components are connected to each other using different buses for communication, and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the computer device, including instructions stored in or on the memory to display graphical information of a GUI on an external input / output device (such as a display device coupled to the interface). In some optional embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple computer devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system).

[0109] The processor may be a central processing unit, a network processor or a combination thereof. The processor may further include a hardware chip. The hardware chip may be a dedicated integrated circuit, a programmable logic device or a combination thereof. The programmable logic device may be a complex programmable logic device, a field programmable gate array, a general purpose array logic or any combination thereof.

[0110] The memory stores instructions executable by at least one processor, so that the at least one processor executes the method shown in the above embodiment.

[0111] The memory may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the computer device, etc. In addition, the memory may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some optional embodiments, the memory may optionally include a memory remotely arranged relative to the processor, and these remote memories may be connected to the computer device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0112] The memory may include volatile memory, such as random access memory; the memory may also include non-volatile memory, such as flash memory, hard disk or solid state drive; the memory may also include a combination of the above types of memory.

[0113] The computer device also includes an input device and an output device. The processor, memory, input device and output device can be connected via a bus or other methods.

[0114] The input device can receive input digital or character information, and generate key signal input related to the user settings and function control of the computer device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick, etc. The output device may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The above-mentioned display device includes but is not limited to a liquid crystal display, a light emitting diode, a display and a plasma display. In some optional embodiments, the display device may be a touch screen.

[0115] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0116] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0117] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, a plurality of steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0118] In the description of this specification, the description with reference to the terms "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0119] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0120] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the present invention.

Claims

1. A two-dimensional material resistor, characterized in that: The two-dimensional material resistor includes a positive electrode, a negative electrode and multiple functional areas; The positive electrode and the negative electrode are arranged opposite to each other, the multiple functional areas are located between the positive electrode and the negative electrode, the multiple functional areas are arranged in sequence along the length direction of the two-dimensional material resistor, or the multiple functional areas are arranged in sequence along the width direction of the two-dimensional material resistor; The functional area includes a plurality of cellular areas, at least one cellular area in at least one of the functional areas is provided with at least one resistance adjustment hole, and sizes of the resistance adjustment holes in different functional areas are different.

2. The two-dimensional material resistor according to claim 1, characterized in that: In the length direction or the width direction of the two-dimensional material resistor, the sizes of the resistance adjustment holes in the multiple functional areas increase gradually.

3. The two-dimensional material resistor according to claim 1, characterized in that: The plurality of resistance adjustment holes in the functional area are arranged in a matrix form.

4. The two-dimensional material resistor according to claim 3, characterized in that: The shape of the cell region and the shape of the resistance adjustment hole are both square, the number of the resistance adjustment hole in the cell region is one, and the side length of the cell region and the spacing between two adjacent resistance adjustment holes are determined by the following formula: Wherein, a represents the side length of the cell area, b represents the distance between two adjacent resistance adjustment holes, α represents the linear relationship between the square resistance before and after adjustment, R l0 represents the initial square resistance of the functional area, R li represents the target resistance of the functional area, β represents the opening limit, and γ represents the test constant.

5. The two-dimensional material resistor according to any one of claims 1 to 4, characterized in that: The side length of the cell region ranges from 1.5 mm to 5 mm.

6. The two-dimensional material resistor according to any one of claims 1 or 3, characterized in that: The shape of the cell region is triangular or hexagonal, and the shape of the resistance adjustment hole is triangular or hexagonal.

7. The two-dimensional material resistor according to claim 6, characterized in that: When the shape of the resistance adjusting hole is triangular, the number of the resistance adjusting holes in the cell region is at least two.

8. The two-dimensional material resistor according to any one of claims 1 to 4, characterized in that: The material of the two-dimensional material resistor includes one or more of nickel, chromium, copper, graphene, graphite and carbon conductive ink.

9. A method for adjusting the resistance of a two-dimensional material, characterized in that: The method comprises: Obtaining an initial sheet resistance of an original two-dimensional material resistor and a target sheet resistance of each functional area, wherein the original two-dimensional material resistor includes a plurality of the functional areas; Based on the initial square resistance and the target square resistance of the target functional area, determining the size of the cell area in the target functional area, the spacing between the resistance adjustment holes in two adjacent cell areas, and the size of the resistance adjustment holes, wherein the target functional area is a functional area with different target resistance and initial square resistance among the multiple functional areas; Determine a processing layout based on the size of the cell region, the spacing between the resistance adjustment holes in two adjacent cell regions, and the size of the resistance adjustment holes, wherein the processing layout is used to characterize the positions of the plurality of resistance adjustment holes in the target functional area; Based on the processing layout, a laser cutting device is controlled to form a plurality of the resistance adjustment holes on the target functional area to obtain the two-dimensional material resistor according to any one of claims 1 to 8.

10. The method according to claim 9, characterized in that Before obtaining the initial sheet resistance of the original two-dimensional material resistor and the target sheet resistance of each functional area, the method further includes: The initial square resistance of the original two-dimensional material resistor is determined by a square resistance tester.

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