Electronic component, semiconductor device, and method for manufacturing semiconductor device

Abstract

The invention provides an electronic component, a semiconductor device and a method for manufacturing the semiconductor device, wherein the service life of a resistor is not easy to shorten. The electronic component includes: an insulator; the first resistor is arranged on the insulator; a first insulating film provided on the first resistor and in contact with the first resistor; and a first metal adhesive material provided on the first insulating film, in contact with the first insulating film, and in contact with the heat sink.

Description

Technical Field The present disclosure relates to an electronic component, a semiconductor device, and a method for manufacturing a semiconductor device. Background Art Patent document 1 discloses a technology related to a field effect transistor. The field effect transistor includes: a plurality of power field effect transistor chips; capacitors for impedance matching, which are arranged corresponding to the power field effect transistor chips; an input matching circuit substrate; and an output matching circuit substrate in a housing. The field effect transistor is characterized in that at least one of the plurality of power field effect transistor chips or the power field effect transistor chip and the impedance matching capacitor is connected by a resistor film. Prior art literature Patent Literature Patent Document 1: Japanese Patent Application Laid-Open No. 63-86904 For example, a circuit using a resistor is formed in an electronic component such as a semiconductor device. In this circuit, since power is consumed in the resistor, heat is generated in the resistor. Therefore, in order to dissipate heat, a base material composed of, for example, aluminum oxide is used. However, when the power consumption in the resistor is large, the heat is not sufficiently dissipated at the thermal conductivity of aluminum oxide. When the heat dissipation is insufficient, the life of the resistor is easily shortened due to heat. Summary of the invention An object of the present disclosure is to provide an electronic component, a semiconductor device, and a method for manufacturing a semiconductor device in which the life of a resistor is less likely to be shortened.

[0001] An electronic component according to one embodiment of the present disclosure includes: an insulator; a first resistor provided on the insulator; a first insulating film provided on and in contact with the first resistor; and a first metal adhesive provided on and in contact with the first insulating film and in contact with a heat sink. The first insulating film is sandwiched between the first resistor and the first metal adhesive material. Even if the first metal adhesive material is set on the first insulating film, the insulation between the first resistor and the first metal adhesive material is maintained. The heat generated in the first resistor reaches the first metal adhesive material in contact with the first insulating film after being transmitted to the first insulating film in contact with the first resistor. The first metal adhesive material is also in contact with the radiator. As a result, the heat generated in the first resistor is not only dissipated to the insulator, but also dissipated to the radiator via the first metal adhesive material. Therefore, an electronic component with improved heat dissipation efficiency and less likely to shorten the life of the resistor can be achieved.

[0002] In the electronic component of the above-mentioned [1], the insulator may also be provided on the radiator. When the insulator is provided on the radiator, the heat dissipated from the resistor to the insulator is transferred to the radiator. As a result, the heat dissipated from the resistor is not easily accumulated in the insulator and is easily dissipated to the radiator. Therefore, the heat dissipation efficiency via the insulator is improved.

[0003] In the electronic component of [1] or [2] above, the first insulating film may also include at least one of glass and ceramic. The first insulating film is glass or ceramic, so that the first insulating film can be partially applied. Therefore, it is easy to apply the first insulating film on the first resistor. In addition, glass or ceramic generally has high heat resistance and can withstand the heat of the molten first metal adhesive material.

[0004] According to one embodiment of the present disclosure, a semiconductor device may also be a semiconductor device in which the electronic component of the above-mentioned [1] is mounted on a heat sink, and comprises: a semiconductor chip disposed on the heat sink; and a capacitor disposed on the heat sink. The semiconductor chip may also be electrically connected to the capacitor and the first resistor via a wire. A portion of the current passing through the semiconductor chip and the capacitor is consumed in the first resistor, and the first resistor generates heat. Therefore, heat can be efficiently dissipated by disposing the first metal adhesive material on the first resistor.

[0005] In the semiconductor device of [4] above, the semiconductor chip may also be a transistor. The first resistor may also be a resistor for a low-frequency path or a resistor for preventing oscillation. Generally, in an amplifier such as a transistor, the power consumption in the resistor is relatively large. Therefore, a first metal adhesive material is provided on the first resistor of the semiconductor device. In addition to being dissipated to the insulator, the heat generated in the first resistor is also dissipated to the heat sink via the first metal adhesive material. Therefore, the heat dissipation efficiency of the semiconductor device is improved.

[0006] In the semiconductor device of the above-mentioned [4] or [5], the semiconductor chip may include a silicon carbide substrate. The first metal adhesive material may be a silver paste.

[0007] The semiconductor device of any one of [4] to [6] above may also further include: a second resistor provided on the insulator; a second insulating film provided on the second resistor and in contact with the second resistor; and a second metal adhesive provided on the second insulating film and in contact with the second insulating film. The second resistor may also have a resistance value different from that of the first resistor. By pre-setting a second resistor having a resistance value different from that of the first resistor and changing the connection of the resistors in the semiconductor device, the circuit configuration can be easily changed.

[0008] In the semiconductor device of any one of [4] to [7] above, the insulator may be a frame having an opening inside and disposed on a heat sink. The semiconductor chip and the capacitor may be disposed inside the opening. The frame and the heat sink may be components constituting a package of the semiconductor device. In order to dissipate heat, the insulator is disposed in contact with the first resistor. The insulator is disposed on the heat sink as a frame of a package in the semiconductor device. In this way, the number of components mounted on the semiconductor device is reduced by having the frame also serve as an insulator.

[0009] In the semiconductor device of [8] above, the frame may also have a side surface inside the opening. A half via may also be provided on the side surface. A portion of the first metal adhesive material between a portion in contact with the first insulating film and a portion in contact with the heat sink may also be accommodated in the half via. The first metal adhesive material can be more reliably guided to a desired position on the heat sink through the half via. Therefore, the first metal adhesive material can be applied to a desired position with high precision.

[0010] According to one embodiment of the present disclosure, a method for manufacturing a semiconductor device comprises the following steps: preparing a frame formed of an insulator, the frame being bonded to a heat sink and having an opening inside; forming a resistor on the frame; forming an insulating film on the resistor in contact with the resistor; and dripping a metal adhesive material in contact with the insulating film and the heat sink. The insulating film is arranged in contact with the resistor, and even if a metal adhesive material in contact with the insulating film is arranged, the insulation of the resistor is maintained. The heat generated in the resistor reaches the metal adhesive material in contact with the insulating film after being transferred to the insulating film in contact with the resistor. The metal adhesive material is also in contact with the radiator. Thus, the heat generated in the resistor is not only dissipated to the insulator, but also dissipated to the radiator via the metal adhesive material. Therefore, a method for manufacturing an electronic component can be achieved in which the heat dissipation efficiency is improved and the life of the resistor is not easily shortened.

[0011] The method for manufacturing a semiconductor device of the above-mentioned

[10] may also include a step of mounting a semiconductor chip and a capacitor on a heat sink after the dripping step. The method for manufacturing an electronic component may also include applying a metal adhesive material to the area on the heat sink where the semiconductor chip and the capacitor are mounted during the dripping step. In the same step, the metal adhesive material is applied and dripped on the portion on the heat sink where the semiconductor chip and the capacitor are mounted and on the insulating film. As a result, the number of steps is reduced and the operating efficiency is improved. Effects of the Invention According to the present disclosure, it is possible to provide an electronic component, a semiconductor device, and a method for manufacturing a semiconductor device in which the life of a resistor is less likely to be shortened. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 It is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. Figure 2 is along Figure 1 A cross-sectional view taken along line II-II is shown. Figure 3 is along Figure 1 A cross-sectional view taken along line III-III is shown. Figure 4 It is a diagram showing the manufacturing process of the semiconductor device according to the first embodiment. Figure 5 It is a top view showing the lead frame. Figure 6 It is a diagram showing the manufacturing process of the semiconductor device according to the first embodiment. Figure 7 It is a diagram showing the manufacturing process of the semiconductor device according to the first embodiment. Figure 8 1 is a plan view showing a semiconductor device according to a first modification. Fig. 9 It is a perspective view showing a part of a semiconductor device according to a first modification. Fig.10 FIG. 1 is a plan view showing a semiconductor device according to a second modification. Fig.11 It is a diagram showing the manufacturing process of the semiconductor device according to the second modification. Fig.12 1 is a plan view showing a semiconductor device according to a third modification example. Fig.13 is along Fig.12 A cross-sectional view taken along line XIII-XIII is shown. Fig.14 1 is a plan view showing a semiconductor device according to a fourth modification. Fig.15 1 is a plan view showing a semiconductor device according to a fifth modification. Fig.16 It is a diagram showing the manufacturing process of the semiconductor device according to the fifth modification. Fig.17 It is a diagram showing the manufacturing process of the semiconductor device according to the fifth modification. Fig.18 It is a diagram showing the manufacturing process of the semiconductor device according to the fifth modification. Fig.19 1 is a plan view showing a semiconductor device according to a sixth modification. Fig. 20 is along Fig.19 A cross-sectional view taken along line XX-XX is shown. Description of reference numerals: 10: Ceramic coating; 11, 11BC: frame; 11a~11e, 12a: surface; 11f: half via; 11g: green tablets; 11h: Open mouth; 12: base; 13-16, 15E, 16E: pattern; 17: Lead frame; 18a, 18b: connecting rod; 19: Cover; 21, 22: resistance; 23: Substrate; 30, 30c, 32: insulating film; 31: Insulator; 40, 41, 42: metal bonding materials; 61, 62: terminal; 71~76: capacitor; 71a~74a: metal film; 71b~74b: ceramic block; 77~99: wire; 100: semiconductor chips; 201, 202: resistance components; A~G: semiconductor devices; L1~L3: interval; P, R: Package. DETAILED DESCRIPTION Hereinafter, specific examples of the electronic component, semiconductor device, and method for manufacturing the semiconductor device disclosed in the present invention will be described with reference to the accompanying drawings. It should be noted that the present invention is not limited to these examples, but is indicated by the claims, and is intended to include all changes within the meaning and scope equivalent to the claims. In the following description, the same reference numerals are used for the same elements in the description of the drawings, and repeated descriptions are omitted. (First Embodiment) Figure 1 It is a plan view showing a semiconductor device A according to the first embodiment of the present disclosure. Figure 2 is along Figure 1 A cross-sectional view taken along line II-II is shown. Figure 3 is along Figure 1 The sectional view along the line III-III is shown in FIG. The xyz orthogonal coordinate system is shown in FIG. The semiconductor device A is an example of an electronic component disclosed in the present invention. The semiconductor device A includes a package P. The package P includes a base 12, a frame 11, and a cover 19 (see FIG. Figure 7). In other words, the base 12, the frame 11 and the cover 19 are components that constitute the package P. The base 12 is a plate-like body and has a rectangular shape when viewed from above. The cross section perpendicular to the extension direction of the base 12 has a rectangular shape. The base 12 has a surface 12a. The surface 12a is the surface of the base 12 facing the direction perpendicular to the extension direction of the base 12. The material of the base 12 is, for example, a metal such as copper (Cu). The base 12 functions as a heat sink. The base 12 is set to a reference potential (ground potential). The frame 11 is an insulator fixed to the surface 12a of the base 12. The frame 11 is in a rectangular frame shape when viewed from above, and has an opening 11h in a rectangular shape when viewed from the normal direction of the surface 12a. The frame 11 includes surfaces 11a to 11e. The surfaces 11a to 11d are surfaces of the frame 11 that face the direction perpendicular to the extension direction of the frame 11 and are opposite to the base 12. The surfaces 11a and 11c are along the y direction (the short dimension direction of the frame 11). The surfaces 11b and 11d are along the x direction (the long dimension direction of the frame 11). The interval L1 in the x direction between the outer edge and the inner edge of the frame 11 on the surface 11a is larger than the interval L2 in the y direction between the outer edge and the inner edge of the frame 11 on the surface 11b. In addition, the interval L1 is larger than the interval L3 in the y direction between the outer edge and the inner edge of the frame 11 on the surface 11d. The surface 11e is a side surface inside the opening 11h of the frame 11, and is a surface continuous with the surface 11a along the y direction. The cross section of the frame 11 perpendicular to the extending direction has a rectangular shape. The material of the frame 11 is, for example, ceramics such as alumina (Al2O3). The thermal conductivity of alumina is, for example, about 32W / (m·K). The frame 11 is, for example, composed of a single layer of alumina. In addition, the semiconductor device A includes: a terminal 61, a terminal 62, a resistor 21 (first resistor), a pattern 15, and a pattern 16. The terminal 61 is provided at the central portion of the surface 11b. The terminal 62 is provided at the central portion of the surface 11d. The terminal 61 and the terminal 62 have a rectangular shape when viewed from above. The terminal 61 and the terminal 62 are conductive and are plated with gold (Au). The terminal 61 is, for example, an input terminal. The terminal 62 is, for example, an output terminal. The resistor 21 is provided at a position in the central portion of the surface 11a that is close to the inner edge of the frame body 11 relative to the outer edge of the frame body 11, and is provided in contact with the surface 11a. The resistor 21 is in the shape of a rectangular film. The material of the resistor 21 is, for example, an alloy containing at least one conductive body selected from silver (Ag), palladium (Pd), and platinum (Pt). The resistor 21 is a resistor for a low-frequency path. The patterns 15 and 16 are arranged along the y direction on the surface 11a and provided in contact with the surface 11a. The patterns 15 and 16 are arranged on both sides of the resistor 21 in the y direction, and are in contact with the resistor 21. The pattern 15 is arranged on the terminal 61 side relative to the resistor 21. The pattern 16 is arranged on the terminal 62 side relative to the resistor 21. The patterns 15 and 16 are formed by the ceramic coating 10 (see Figure 4) covers the central part. Only the ends of pattern 15 and pattern 16 are exposed from the ceramic coating 10. Pattern 15 and pattern 16 are in the form of rectangular films. The material of pattern 15 and pattern 16 is, for example, tungsten (W), platinum (Pt), silver (Ag), copper (Cu) or other metals or their alloys. Pattern 15 and pattern 16 are plated with gold (Au). Furthermore, the semiconductor device A includes: a semiconductor chip 100, capacitors 71 to 74, and wires 81 to 91. The semiconductor chip 100 is provided at the central portion of the surface 12a inside the opening 11h of the frame 11. The back surface of the semiconductor chip 100 is conductively bonded to the surface 12a of the base 12 via a metal adhesive 41. The semiconductor chip 100 is, for example, a transistor. When the semiconductor chip 100 is, for example, a nitride semiconductor, the substrate is, for example, a silicon carbide (SiC) substrate, a silicon (Si) substrate, a gallium nitride (GaN) substrate, or a sapphire (Al2O3) substrate. The semiconductor layer on the substrate includes, for example, a nitride semiconductor layer such as a gallium nitride layer, an aluminum gallium nitride (AlGaN) layer, and / or an indium gallium nitride (InGaN) layer. When the transistor is a GaN HEMT (Gallium Nitride High Electron Mobility Transistor), the semiconductor layer includes: a gallium nitride channel layer, which is provided on a substrate; and an aluminum gallium nitride barrier layer, which is provided on the channel layer. When the semiconductor chip 100 is, for example, a gallium arsenide (GaAs)-based semiconductor, the substrate is, for example, a gallium arsenide substrate. The semiconductor layer provided on the substrate includes, for example, an arsenide semiconductor layer such as a gallium arsenide layer, an aluminum gallium arsenide (AlGaAs) layer, and / or an indium gallium arsenide (InGaAs) layer. The semiconductor chip 100 may also be a silicon semiconductor such as an LDMOS (Laterally Diffused Metal Oxide Semiconductor). Capacitors 71 to 74 are provided on the surface 12a inside the opening 11h of the frame 11. Capacitors 71 and 72 are provided on both sides of the semiconductor chip 100 in the y direction across the semiconductor chip 100. Capacitor 71 is provided at a position close to the terminal 61 relative to the semiconductor chip 100. The capacitor 72 is provided at a position close to the terminal 62 relative to the semiconductor chip 100. The capacitor 73 and the capacitor 74 are provided at a position close to the resistor 21 relative to the semiconductor chip 100. In addition, the capacitor 73 is provided at a position close to the terminal 62 relative to the semiconductor chip 100. The capacitor 74 is provided at a position close to the terminal 61 relative to the semiconductor chip 100. The capacitor 71 is composed of a metal film 71a, a ceramic block 71b and a base 12. The capacitor 72 is composed of a metal film 72a, a ceramic block 72b and a base 12. The capacitor 73 is composed of a metal film 73a, a ceramic block 73b and a base 12. The capacitor 74 is composed of a metal film 74a, a ceramic block 74b and a base 12. The capacitor 71 and the capacitor 72 function as a part of the matching circuit in the semiconductor device A. The back surfaces of the ceramic blocks 71b to 74b are bonded to the surface 12a of the base 12 via the metal adhesive 41. The wire 81 connects the pattern 15 to the metal film 74a of the capacitor 74.The wire 82 connects the pattern 16 to the metal film 73a of the capacitor 73. The wire 83 connects the metal film 73a of the capacitor 73 to the terminal 62. The wire 84 and the wire 88 connect the terminal 61 to the metal film 71a of the capacitor 71. The wire 85 and the wire 89 electrically connect the metal film 71a of the capacitor 71 to the semiconductor chip 100. The wire 86 and the wire 90 electrically connect the semiconductor chip 100 to the metal film 72a of the capacitor 72. The wire 87 and the wire 91 connect the metal film 72a of the capacitor 72 to the terminal 62. The wires 81 to 91 are, for example, bonding wires. The semiconductor device A functions as a high-frequency amplifier device, for example. An input signal input to the terminal 61 is input to the semiconductor chip 100 through a matching circuit including a capacitor 71. The signal amplified in the semiconductor chip 100 is output from the terminal 62 through a matching circuit including a capacitor 72. In the circuit including the resistor 21, the capacitor 73, and the capacitor 74, low-frequency components are suppressed. At this time, power is consumed in the resistor 21. Semiconductor device A includes an insulating film 30 (first insulating film) and a metal adhesive material 40 (first metal adhesive material). The insulating film 30 covers the resistor 21. The insulating film 30 covers the entire resistor 21. The insulating film 30 is in contact with the resistor 21. The insulating film 30 has an elliptical shape when viewed from above. The inner diameter of the insulating film 30 in the x direction is shorter than the inner diameter of the insulating film 30 in the y direction. The insulating film 30 is formed by solidifying a paste material. The material of the insulating film 30 is, for example, glass containing silicon (Si). The thermal conductivity of glass is, for example, approximately 1 W / (m·K). The metal adhesive material 40 is provided on the insulating film 30 and is in contact with the entire insulating film 30. In addition, the metal adhesive material 40 is also in contact with the surface 11a. As Figure 3 As shown, the portion of the metal adhesive material 40 in contact with the insulating film 30 and the surface 11a extends in the x direction. The metal adhesive material 40 is also in contact with the surface 11e, and the portion of the metal adhesive material 40 in contact with the surface 11e extends in the z direction. The metal adhesive material 40 is also in contact with the surface 12a of the base 12, and the portion of the metal adhesive material 40 in contact with the base 12 extends in the x direction and the y direction. The metal adhesive material 40 is in continuous contact with the insulating film 30, the frame 11, and the base 12. The metal adhesive material 40 extends in a semicircular shape from the inner edge of the frame 11 in the x direction on the surface 11a. The metal adhesive material 40 extends in an elliptical shape from the inner edge of the frame 11 in the x direction on the surface 12a. The metal adhesive material 40 is, for example, composed of a metal that melts at a temperature of 180°C or more and 350°C or less. The material of the metal adhesive material 40 is, for example, silver paste or solder. The thermal conductivity of silver (Ag) is, for example, approximately 427 W / (m·K). The thermal conductivity of Sn—Ag—Cu solder is, for example, approximately 55 W / (m·K). The material of the metal adhesive 40 may be the same as or different from the material of the metal adhesive 41 . For the method for manufacturing the semiconductor device A according to the first embodiment of the present disclosure, refer to Figures 4 to 7 First, prepare a frame 11 having an opening 11h inside and made of an insulator. Figure 4 As shown in (a) of FIG. 1 , an opening 11h is provided in the center of a green sheet 11g made of ceramic before firing. Figure 4 As shown in (b), pattern 13, pattern 14, pattern 15 and pattern 16 are provided on raw sheet 11g by pattern printing. Pattern 13 is a metal pattern and is arranged in the center of surface 11b. Pattern 14 is a metal pattern and is arranged in the center of surface 11d. The material of pattern 13 and pattern 14 is tungsten (W), platinum (Pt), silver (Ag), copper (Cu) or other metal or alloy thereof. Then, as shown in FIG. Figure 4 As shown in (c), a ceramic coating 10 is applied to the central portion of the pattern 15 and the central portion of the pattern 16. At this time, only the ends of the pattern 15 and the pattern 16 are exposed. The ceramic coating 10 is a paste material containing ceramic. Then, the green sheet 11g and the ceramic coating 10 are fired to form the frame 11. Next, a metal pattern (not shown) is formed on the back surface of the frame 11. Then, the base 12 is bonded to the back surface of the frame 11. Figure 5 1 is a top view showing the lead frame 17. The lead frame 17 is arranged on the frame 11. The lead frame 17 is located on both sides of the frame 11 in the y direction. The lead frame 17 includes a connecting rod 18a and a connecting rod 18b. The connecting rod 18a and the connecting rod 18b are located on both sides of the frame 11 in the y direction. The connecting rod 18a is in contact with the pattern 13. The connecting rod 18b is in contact with the pattern 14. Figure 6 As shown in (a), the connecting rod 18a is bonded to the pattern 13 by a flux containing silver, copper or an alloy thereof. Similarly, the connecting rod 18b is bonded to the pattern 14 by a flux containing silver, copper or an alloy thereof. Then, the base 12, the pattern 15, the pattern 16, the connecting rod 18a and the connecting rod 18b are plated with gold (Au). Next, as shown in Figure 6 As shown in (b), a film of a resistor 21 for connecting to the patterns 15 and 16 is formed between the patterns 15 and 16 on the frame 11, and the film is fired together with the frame 11 to form the resistor 21. Then, as shown in FIG. Figure 6 As shown in (c), an insulating film 30 in contact with the resistor 21 is formed on the resistor 21. The insulating film 30 is provided on the resistor 21 by, for example, printing a glass coating to cover the entire resistor 21. Then, the glass coating is fired together with the frame 11 to form the insulating film 30. Then, the connecting rod 18a and the connecting rod 18b are cut off from the main body of the lead frame 17. Thus, the connecting rod 18a becomes the terminal 61, and the connecting rod 18b becomes the terminal 62. Next, the metal adhesive material 41 is applied to the region where the semiconductor chip 100 and the capacitors 71 to 74 are mounted. Figure 7 As shown in (a), the metal adhesive material 40 is dripped in a manner that contacts the insulating film 30 and the base 12. The melting temperature of the metal adhesive material 40 is, for example, 180° C. or higher and 350° C. or lower. Then, the semiconductor chip 100 and the capacitors 71 to 74 are fixedly mounted on the base 12. Next, as shown in Figure 7 As shown in (b), wires 81 to 91 are provided. Finally, as Figure 7 As shown in (c) of FIG. 1 , a cover 19 is mounted on the frame 11. The cover 19 is in the shape of a plate. The effects obtained by the semiconductor device A having the above configuration and the method for manufacturing the semiconductor device A are described. The semiconductor device A consumes power in the resistor 21, and thus generates heat in the resistor 21. Generally, in an amplifier such as a transistor, the power consumption in the resistor is relatively large. The resistor 21 is provided on the frame 11, and therefore, the heat generated in the resistor 21 is dissipated through the frame 11. However, in the case where the power consumption in the resistor 21 is large, the heat is not sufficiently dissipated at the thermal conductivity of the frame 11. Therefore, in the semiconductor device A according to the first embodiment, an insulating film 30 and a metal adhesive material 40 are provided. The insulating film 30 is sandwiched between the resistor 21 and the metal adhesive material 40. Thus, even if the metal adhesive material 40 is provided on the insulating film 30, the insulation between the resistor 21 and the metal adhesive material 40 is maintained. When the thickness of the insulating film 30 is sufficiently thin, the heat generated in the resistor 21 is transferred to the insulating film 30 in contact with the resistor 21, and then reaches the metal adhesive material 40 in contact with the insulating film 30. The metal adhesive material 40 is also in contact with the base 12. Thus, the heat generated in the resistor 21 is not only dissipated to the frame 11, but also dissipated to the base 12 via the metal adhesive 40. Therefore, a semiconductor device A and a method for manufacturing the semiconductor device A can be realized in which the heat dissipation efficiency is improved and the life of the resistor 21 is not easily shortened. In addition, in the same manufacturing process, the metal adhesive 41 is applied to the portion on the base 12 where the semiconductor chip 100, the capacitors 71 to 74, and the insulating film 30 are mounted. Thus, a method for manufacturing the semiconductor device A with a reduced number of processes and improved work efficiency can be realized. Since the frame 11 is disposed on the base 12, the heat dissipated from the resistor 21 to the frame 11 is transferred to the base 12. As a result, the heat dissipated from the resistor 21 is not easily accumulated in the frame 11, but is easily dissipated to the base 12. Therefore, the heat dissipation efficiency via the frame 11 is improved. The current passing through the capacitors 73 and 74 passes through the resistor 21, and the resistor 21 generates heat. Therefore, the metal adhesive material 40 can be provided on the resistor 21 to efficiently dissipate heat. In addition, an insulator is provided in contact with the resistor 21 to dissipate heat. The insulator is provided on the base 12 as the frame 11 of the package in the semiconductor device A. In this way, the number of components mounted on the semiconductor device A is reduced by the frame 11 also serving as an insulator for mounting the resistor 21. As shown in this embodiment, the insulating film 30 may also include at least one of glass and ceramics. The insulating film 30 is, for example, glass, so that the insulating film 30 can be partially applied. Thus, it is easy to apply the insulating film 30 on the resistor 21. In addition, glass generally has high heat resistance, and therefore can withstand the heat of the molten metal adhesive material 40. (First Modification) Figure 8 1 is a plan view showing a semiconductor device B according to a first modification. Fig. 9 FIG. 1 is a perspective view showing a portion of a semiconductor device B according to a first modification. Fig. 9 , the illustration of the insulating film 30 and the metal adhesive material 40 is omitted. The semiconductor device B is different from the semiconductor device A in the following points, and is the same as the semiconductor device A in other points. The semiconductor device B has a package R instead of the package P. The package R has a frame 11BC instead of the frame 11. The other structures of the package R are the same as those of the package P. In this modified example, a half via 11f is provided in the central part of the surface 11e of the frame 11BC. The half via 11f is semicircular when viewed from above (viewed from the normal direction of the surface 12a). The surface of the half via 11f is plated with gold (Au). The portion between the portion in contact with the insulating film 30 and the portion in contact with the base 12 in the metal adhesive material 40 is accommodated in the half via 11f. In the semiconductor device B having the above configuration, the metal adhesive 40 can be more reliably guided to a desired position on the base 12 through the half via 11f. Therefore, the metal adhesive 40 can be applied to a desired position on the base 12 with high accuracy. (Second Modification) Fig.10 1 is a top view of a semiconductor device C according to a second variant. The semiconductor device C is different from the semiconductor device B in the following points, and is the same as the semiconductor device B in other points. In the semiconductor device C, an insulating film 30c (first insulating film) is provided on the frame 11BC instead of the insulating film 30. The insulating film 30c covers the entire resistor 21. The insulating film 30c is in contact with the resistor 21. The insulating film 30c has a rectangular shape when viewed from above. The insulating film 30c is formed by curing a paste material. The material of the insulating film 30c is, for example, ceramic. The metal adhesive material 40 is provided on the insulating film 30c and is in contact with the entire insulating film 30c. Reference Fig.11 A method for manufacturing a semiconductor device C according to a second variation of the present disclosure will be described. The method for manufacturing the semiconductor device C is the same as the method for manufacturing the semiconductor device A described above, up to the step of printing the resistor 21 pattern on the frame 11BC. Fig.11 As shown in (a), after setting the resistor 21 between the pattern 15 and the pattern 16, a paste-like ceramic coating is applied on the resistor 21 as an insulating film 30c. The ceramic coating covers the entire resistor 21. After applying the ceramic coating, the semiconductor device C is fired to solidify the ceramic coating to form the insulating film 30c. Then, the lead frame (not shown) is cut off from the connecting rod. Next, as shown in FIG. Fig.11 As shown in (b), the metal adhesive material 40 is dripped in a manner that contacts the insulating film 30c and the base 12. At the same time, the metal adhesive material 41 is applied to the mounting surface of the semiconductor chip 100 and the capacitors 71 to 74. Then, the semiconductor chip 100 and the capacitors 71 to 74 are mounted on the surface 12a. The subsequent manufacturing method of the semiconductor device C is the same as the manufacturing method of the semiconductor device A. In the semiconductor device C having the above structure, even if the insulating film 30 is replaced by the insulating film 30c, an insulating film can be partially formed. In addition, ceramics generally have high heat resistance, and thus can withstand the heat of the molten metal adhesive material 40. In addition, the insulating film 30c can be provided on the resistor 21 in the same process as the process of providing the ceramic coating 10 on the pattern 15 and the pattern 16. In this case, the number of processes can be reduced. Therefore, the work efficiency in the manufacture of the semiconductor device C is improved. (Third Modification) Fig.12 (a) is a top view of a semiconductor device D according to a third modification example. Fig.12 (b) is a diagram of the semiconductor device D in which the semiconductor chip 100 , the capacitors 71 to 74 , and the metal adhesive 40 are omitted. Fig.13 is along Fig.12 The semiconductor device D is different from the semiconductor device A in the following points, and is the same as the semiconductor device A in other points. In the semiconductor device D, the resistor 21, the pattern 15, and the pattern 16 are provided in a portion that is not on the frame 11. That is, the semiconductor device D includes a resistor component 201. The resistor component 201 includes a substrate 23, an insulator 31 (a first insulating film), a resistor 21, a pattern 15, and a pattern 16. Fig.12As shown in (a), the resistor component 201 is provided on the side opposite to the semiconductor chip 100 relative to the capacitor 73 and the capacitor 74. The resistor 21 is embedded in the center of the resistor component 201, and the pattern 15 and the pattern 16 are exposed from both ends of the resistor component 201. The resistor component 201 has a rectangular shape when viewed from above. The substrate 23 is provided on the surface 12a. The material of the substrate 23 is, for example, ceramics such as alumina. Fig.13 As shown, the resistor 21 is disposed on the substrate 23 and in contact with the substrate 23. The insulator 31 is disposed on the substrate 23 and on the resistor 21, in contact with the substrate 23 and the resistor 21, and covers the resistor 21. The material of the insulator 31 is, for example, ceramics such as alumina. Fig.12 As shown in (a) of FIG. 8 , a metal bonding material 40 is provided on the insulator 31 . In the semiconductor device D having the above configuration, the resistor 21 is insulated from the metal adhesive 40 by the insulator 31 instead of the insulating film 30. The resistor component 201 can be assembled in advance. Therefore, the step of insulating the resistor 21 can be omitted by assembling the resistor component 201 to the semiconductor device D. Therefore, the work efficiency in manufacturing the semiconductor device D is improved. (Fourth Modification) Fig.14 1 is a top view of a semiconductor device E according to a fourth variation. The semiconductor device E is different from the semiconductor device A in the following points, and is the same as the semiconductor device A in other points. The semiconductor device E further includes a resistor 22 (a second resistor), a pattern 15E, and a pattern 16E. The resistor 22 is provided in contact with the surface 11c at a position close to the inner edge of the frame body 11 relative to the outer edge of the frame body 11 in the center portion of the surface 11c. The resistor 22 is in the shape of a rectangular film. The material of the resistor 22 is, for example, an alloy containing at least one conductor selected from silver (Ag), palladium (Pd), and platinum (Pt). An insulating film 32 (a second insulating film) is provided on the resistor 22. A metal adhesive 42 (a second metal adhesive) is provided on the insulating film 32. The configurations of the insulating film 32 and the metal adhesive 42 are the same as those of the insulating film 30 and the metal adhesive 40, respectively. The resistor 22 has a resistance value different from that of the resistor 21. For example, the length of the resistor 22 in the y direction is different from the length of the resistor 21 in the y direction. The pattern 15E and the pattern 16E are arranged side by side in the y direction on the surface 11c. The pattern 15E and the pattern 16E are arranged on both sides of the resistor 22 in the y direction to contact the resistor 22 with the resistor 22 interposed therebetween. In the semiconductor device E having the above configuration, the resistor 22 has a resistance value different from that of the resistor 21. By providing the resistor 22 having a resistance value different from that of the resistor 21 and changing the connection of the resistors in the semiconductor device E, the circuit configuration can be easily changed. (Fifth Modification) Fig.151 is a top view of a semiconductor device F according to a fifth variation. The semiconductor device F differs from the semiconductor device A in the following points, and is the same as the semiconductor device A in other points. The resistor 21, the pattern 15, and the pattern 16 of the semiconductor device F are located between the terminal 61 and the inner edge of the frame 11 (i.e., between the terminals 61 and 11). Figure 1 The semiconductor device F is arranged along the x direction on the surface 11b shown in the figure. The pattern 16, the resistor 21, and the pattern 15 are arranged in this order. The resistor 21 of this modified example is a resistor for preventing oscillation. In addition, the semiconductor device F has capacitors 75 and 76 instead of capacitor 71. The semiconductor device F does not have capacitors 73 and 74. The capacitors 75 and 76 are arranged along the x direction. The capacitors 75 and 76 are arranged on the surface 12a between the semiconductor chip 100 and the terminal 61. In addition, the semiconductor device F has wires 77 to 80, wires 92 to 99 instead of wires 81 to 85, wire 88, and wire 89. Wire 92 connects the terminal 61 to the pattern 15. Wire 93 connects the terminal 61 to the pattern 16. Wire 80 and wire 94 connect the pattern 15 to the capacitor 75. Wire 79 and wire 95 connect the pattern 16 to the capacitor 76. The wires 78 , 96 , and 97 connect the capacitor 75 and the semiconductor chip 100 . The wires 77 , 98 , and 99 connect the capacitor 76 and the semiconductor chip 100 . For the method for manufacturing the semiconductor device F according to the fifth modification of the present disclosure, refer to Figure 16 to Figure 18 First, prepare a frame 11 having an opening 11h inside and made of an insulator. Fig.16 As shown in (a) of FIG. 1 , an opening 11h is provided in the center of a green sheet 11g made of ceramic before firing. Fig.16 As shown in (b), patterns 13 to 16 are provided on the green sheet 11g by pattern printing. The pattern 13 is arranged at a position close to the outer edge of the green sheet 11g relative to the opening 11h in the center of the surface 11b. Then, as shown in FIG. Fig.16 As shown in (c), the ceramic coating 10 is applied to the center of the pattern 15 and the center of the pattern 16. At this time, only the ends of the pattern 15 and the pattern 16 are exposed. Then, the green sheet 11g and the ceramic coating 10 are fired to form the frame 11. Next, a metal pattern (not shown) is formed on the back of the frame 11. Then, the base 12 is bonded to the back of the frame 11. Fig.17 As shown in (a), the lead frame including the connecting rod 18a and the connecting rod 18b is arranged on the frame 11. Then, the base 12, the pattern 15, the pattern 16, the connecting rod 18a and the connecting rod 18b are plated with gold (Au). Fig.17As shown in (b), a film of a resistor 21 for connecting to the patterns 15 and 16 is formed between the patterns 15 and 16 on the frame 11, and the film is fired together with the frame 11 to form the resistor 21. Then, as shown in FIG. Fig.17 As shown in (c), an insulating film 30 in contact with the resistor 21 is formed on the resistor 21. The insulating film 30 is provided on the resistor 21 by, for example, printing a glass coating to cover the entire resistor 21. Then, the glass coating is fired together with the frame 11 to form the insulating film 30. Then, the connecting rod 18a and the connecting rod 18b are cut off from the main body of the lead frame. Thus, the connecting rod 18a becomes the terminal 61, and the connecting rod 18b becomes the terminal 62. Next, the metal adhesive material 41 is applied to the region where the semiconductor chip 100, the capacitor 72, the capacitor 75, and the capacitor 76 are mounted. Fig.18 As shown in (a), the metal adhesive material 40 is dripped in a manner that contacts the insulating film 30 and the base 12. Then, the semiconductor chip 100, the capacitor 72, the capacitor 75, and the capacitor 76 are fixedly mounted on the base 12. Next, as shown in Fig.18 As shown in (b), wires 77 to 80, wires 86, wires 87, and wires 90 to 99 are provided. Finally, as Fig.18 As shown in (c) of FIG. 1 , a cover 19 is assembled on the frame body 11 . The semiconductor device F having the above configuration also achieves the same effects as the semiconductor device A. The resistor 21 can be disposed at various locations. The arrangement of the resistor 21 and the connection of the wires can realize semiconductor devices for various purposes. (Sixth Modification) Fig.19 (a) is a top view of a semiconductor device G according to a sixth modification. Fig.19 (b) is a diagram in which the metal adhesive 40 and the wire material are omitted from the semiconductor device G. Fig. 20 is along Fig.19 The semiconductor device G is different from the semiconductor device D in the following points, and is the same as the semiconductor device D in other points. The semiconductor device G includes a resistor component 202 instead of the resistor component 201. The resistor component 202 includes a substrate 23, an insulating film 30, a resistor 21, a pattern 15, and a pattern 16. Fig.19As shown in (a), the resistor component 202 is provided on the side opposite to the semiconductor chip 100 relative to the capacitor 73 and the capacitor 74. The resistor 21 is embedded in the central portion of the resistor component 202, and the pattern 15 and the pattern 16 are exposed from both ends of the resistor component 202. The resistor component 202 has a rectangular shape when viewed from above. The resistor 21 is provided on the substrate 23 and is in contact with the substrate 23. The insulating film 30 is provided on the substrate 23 and on the resistor 21, covering the entire resistor 21. The insulating film 30 is in contact with the substrate 23 and the resistor 21. As shown in FIG. Fig.19 As shown in FIG. 2 ( a ), a metal adhesive material 40 is provided on the insulating film 30 . The semiconductor device G having the above configuration also achieves the same effects as those of the semiconductor device D. The present invention has been specifically described above based on the embodiments and variations, but the present invention is not limited to the above-mentioned embodiments and variations, and can be modified without departing from the main purpose thereof. For example, the metal adhesive material 40 is not limited to the above-mentioned embodiments and variations, and may cover the entire insulating film 30. In addition, the insulating film 30 is not limited to the above-mentioned embodiments and variations, and may cover only a portion of the resistor 21. In addition, in the above-mentioned embodiments and variations, an example of providing a half via 11f on the surface 11e is shown, but a plurality of half vias 11f may also be provided on the surface 11e. In addition, in the above-mentioned embodiments and variations, an example of the resistor 21 being a resistor for a low-frequency path and a resistor for preventing oscillation is shown, but the resistor 21 may also be a resistor for an attenuator.

Claims

1. An electronic component comprising: Insulator; A first resistor is disposed on the insulator; a first insulating film, provided on the first resistor and in contact with the first resistor; and The first metal adhesive material is disposed on the first insulating film, in contact with the first insulating film, and in contact with the heat sink.

2. The electronic component according to claim 1, wherein The insulator is arranged on the heat sink.

3. The electronic component according to claim 1 or 2, wherein: The first insulating film includes at least one of glass and ceramics.

4. A semiconductor device, wherein the electronic component according to claim 1 is mounted on the heat sink, comprising: a semiconductor chip disposed on the heat sink; and A capacitor is disposed on the heat sink, The semiconductor chip is electrically connected to the capacitor and the first resistor through wires.

5. The semiconductor device according to claim 4, wherein: The semiconductor chip is a transistor, The first resistor is a resistor for a low-frequency path or a resistor for preventing oscillation.

6. The semiconductor device according to claim 4, wherein: The semiconductor chip has a silicon carbide substrate. The first metal bonding material is silver paste.

7. The semiconductor device according to any one of claims 4 to 6, wherein: The semiconductor device further comprises: A second resistor is disposed on the insulator; a second insulating film, provided on the second resistor and in contact with the second resistor; and A second metal bonding material is disposed on the second insulating film and contacts the second insulating film. The second resistor has a resistance value different from that of the first resistor.

8. The semiconductor device according to any one of claims 4 to 6, wherein The insulator is a frame body provided on the heat sink and having an opening inside. The semiconductor chip and the capacitor are arranged inside the opening, The frame and the heat sink are components constituting a package of the semiconductor device.

9. The semiconductor device according to claim 8, wherein: The frame has a side surface inside the opening, A half via is provided on the side surface, A portion of the first metal adhesive material between a portion in contact with the first insulating film and a portion in contact with the heat sink is accommodated in the half via.

10. A method for manufacturing a semiconductor device, comprising the following steps: Preparing a frame body made of an insulator, the frame body being bonded to the heat sink and having an opening inside; forming a resistor on the frame; forming an insulating film on the resistor so as to be in contact with the resistor; and A metal adhesive material is dropped in contact with the insulating film and the heat sink.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: After the dripping step, there is also a step of mounting a semiconductor chip and a capacitor on the heat sink. In the dropping step, the metal adhesive is applied to a region on the heat sink where the semiconductor chip and the capacitor are mounted.

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