Method for cleaning and drying silica gel adsorption film of semiconductor wafer

Abstract

The invention provides a method for cleaning and drying a silica gel adsorption film of a semiconductor wafer, which comprises the following steps of: (1) cleaning the silica gel adsorption film of the semiconductor wafer by using alcohol, and then cleaning by using a surfactant; (2) after ultrapure water is used for cleaning the semiconductor wafer silica gel adsorption film, isopropanol is used for fourth cleaning; and (3) sequentially carrying out preheating treatment, one-step drying treatment and two-step drying treatment on the semiconductor wafer silica gel adsorption film obtained in the step (2) to obtain the dried semiconductor wafer silica gel adsorption film. By means of the cleaning and drying method, impurities on the semiconductor wafer silica gel adsorption film can be effectively removed, moisture on the surface of a semiconductor wafer silica gel adsorption film product can be effectively removed in the drying process, the structure stability of the semiconductor wafer silica gel adsorption film is guaranteed, and meanwhile the service life of the semiconductor wafer silica gel adsorption film product is prolonged. And the surface dryness of a semiconductor wafer silica gel adsorption film product is well maintained.

Description

Technical Field

[0001] The invention belongs to the technical field of silica gel materials and relates to a method for cleaning and drying a semiconductor wafer silica gel adsorption film. Background Art

[0002] With the continuous advancement of integrated circuit chip process technology, the demand for multi-zone semiconductor wafer silicone adsorption film technology continues to increase. Multi-zone semiconductor wafer silicone adsorption film technology was first used in silicon oxide polishing, and it is used for the adsorption effect of global planarization of interlayer dielectric (ILD). After the integrated circuit chip entered the 0.35μm node, multi-zone semiconductor wafer silicone adsorption film technology was more widely used in the planarization process of metal tungsten, copper, polysilicon, etc. As the number of metal wiring layers increases, more steps are required for multi-zone semiconductor wafer silicone adsorption film polishing.

[0003] The wafer needs to be flattened after sputtering, and it needs to be flattened after each sputtering. During the flattening process, the multi-zone semiconductor wafer adsorption film acts to pressurize and absorb the wafer for chemical mechanical polishing and flattening treatment, and releases the wafer when the pressure is released. When entering 10nm or 7nm, the sputtering level needs to be sputtered many times, so the wafer needs the same number of flattening treatments. The higher the requirements for the use of the multi-zone semiconductor wafer adsorption film, the more clean and free of impurities and contamination the multi-zone semiconductor wafer adsorption film must be.

[0004] The multi-zone semiconductor wafer silica gel adsorption film itself has the advantages of high adsorption performance, good thermal stability, stable chemical properties, and high mechanical strength. However, the bottom and back surfaces of the multi-zone semiconductor wafer silica gel adsorption film product are very easy to adsorb particles, impurities, and fiber impurities.

[0005] CN105855212A discloses a cleaning method for a silica gel polymer material, comprising the following steps: spraying a wear-resistant layer on the surface of the product by spraying; placing the product sprayed with the wear-resistant layer in a steam environment with a steam temperature of 100°C for 5-10 minutes; placing the product in a cleaning machine, wherein the cleaning machine is provided with 4 water outlets, each of which has a water flow diameter of 0.5 cm, and the flow rate of the water to the product sprayed with the wear-resistant layer is 2 cm 3 / s, the product sprayed with the wear-resistant layer is located in the center of the four water outlets, and the product sprayed with the wear-resistant layer moves with the center of the product as the fulcrum; cleaning for 20-30 minutes; the water outlet is connected to the cleaning agent barrel, and the cleaning agent is a mixture of SDS, acetone and water. Using the above cleaning method, put it in the steam environment to loosen the impurities, and then clean it through the four water outlets, and make the product move as a lever to improve the cleaning efficiency.

[0006] CN106220877A discloses a cleaning method for a silica gel sheet, comprising the following steps: (1) soaking the silica gel sheet in distilled water for 10 minutes, then adding ethyl acetate and heating to evaporate the ethyl acetate; (2) taking out the silica gel sheet and cooling it at 4-10°C; (3) spraying the surface of the silica gel sheet with a spray faucet and drying it; (4) spraying an insulating coating on the surface of the silica gel sheet after drying, and cooling and curing it at 4-10°C. The oil stains on the surface of the silica gel sheet are removed by step (1), the expanded silica gel sheet is reset by step (2), further clarified by step (3), and the insulation is increased and the dried expanded silica gel sheet is reset by step (4).

[0007] Although the above-mentioned silica gel cleaning method is complicated to operate, it cannot effectively clean the impurities inside the various partitions of the semiconductor wafer silica gel adsorption film. Moreover, in the prior art, the semiconductor wafer silica gel adsorption film is generally dried by blowing it with an air gun and then left to stand after cleaning. This method is not only time-consuming, but also has a poor drying effect. Summary of the invention

[0008] The object of the present invention is to provide a method for cleaning and drying a semiconductor wafer silica gel adsorption film. The cleaning and drying method of the present invention can not only effectively remove impurities on the semiconductor wafer silica gel adsorption film, but also effectively remove moisture on the surface of the semiconductor wafer silica gel adsorption film product during the drying process. While ensuring the structural stability of the semiconductor wafer silica gel adsorption film, the surface dryness of the semiconductor wafer silica gel adsorption film product is maintained very well.

[0009] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0010] In a first aspect, the present invention provides a method for cleaning and drying a semiconductor wafer silica gel adsorption film, the method comprising the following steps:

[0011] (1) using alcohol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, and using a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film;

[0012] (2) using ultrapure water to perform a third cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning;

[0013] (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film to obtain a preliminarily dried semiconductor wafer silica gel adsorption film;

[0014] (4) The initially dried semiconductor wafer silica gel adsorption film is subjected to a two-step drying process to obtain a dried semiconductor wafer silica gel adsorption film.

[0015] In the drying process of the semiconductor wafer silica gel adsorption film of the present invention, multiple semiconductor wafer silica gel adsorption films can be dried simultaneously, which greatly improves the drying efficiency of the semiconductor wafer silica gel adsorption film.

[0016] The semiconductor wafer silica gel adsorption film itself is prone to hiding impurities at its bottom and ribs due to the particularity of its structure, and it is difficult to remove them by general cleaning methods. The present invention uses suitable cleaning agents to clean the semiconductor wafer silica gel adsorption film at different stages, which can effectively remove impurities hidden at the bottom and ribs of the semiconductor wafer silica gel adsorption film. After enhanced cleaning, the semiconductor wafer silica gel adsorption film product is very easy to hide moisture at the bottom and back ribs. The present invention adopts a multi-stage drying method to fully seal and dust-free dry the semiconductor wafer silica gel adsorption film obtained after cleaning, eliminate moisture on the surface of the semiconductor wafer silica gel adsorption film, and will not damage the structure of the semiconductor wafer silica gel adsorption film. It is better, faster, safer and more convenient to remove moisture adsorbed on the surface of the semiconductor wafer silica gel adsorption film. Compared with the natural evaporation of moisture in an exposed environment, it is more efficient, scientific and standardized, so that it can form large-scale production to provide quality and output guarantees, and improve product quality and product processing efficiency.

[0017] Preferably, the semiconductor wafer silica gel adsorption film in step (1) comprises a multi-zone semiconductor wafer silica gel adsorption film.

[0018] The multi-zone semiconductor wafer silicone adsorption film described in the present invention is divided into: 5-zone semiconductor wafer silicone adsorption film, 7-zone semiconductor wafer silicone adsorption film, and 8-zone semiconductor wafer silicone adsorption film; the present invention is mainly aimed at 5-zone semiconductor wafer silicone adsorption film and 7-zone semiconductor wafer silicone adsorption film.

[0019] Preferably, the alcohol in step (1) comprises ethanol.

[0020] Preferably, the cleaning carrier used for the alcohol in step (1) comprises an ultra-fine purification cloth.

[0021] Preferably, in step (1), water shower treatment is performed after the first cleaning.

[0022] Preferably, the surfactant in step (1) comprises sodium dodecylbenzene sulfonate.

[0023] Preferably, the cleaning carrier used for the surfactant in step (1) comprises a sponge.

[0024] Preferably, the third cleaning in step (2) includes heated ultrasonic cleaning.

[0025] Preferably, the temperature of the heated ultrasonic cleaning in step (2) is 35°C to 45°C, for example, 35°C, 38°C, 40°C, 42°C or 45°C, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0026] Preferably, the cleaning carrier used for the isopropyl alcohol in step (2) comprises an ultra-fine purification cloth.

[0027] Preferably, the cleaning parts of the first cleaning, the second cleaning and the fourth cleaning all include the front side, the back side and the ribs of the semiconductor wafer silica gel adsorption film.

[0028] Taking the 7-zone semiconductor wafer silicone adsorption film as an example, the 7-zone semiconductor wafer silicone adsorption film on the chemical mechanical grinding 12-inch polishing head has the main function of adsorbing and pressurizing the silicon wafer when the polishing head polishes the silicon wafer. The front side of the semiconductor wafer silicone adsorption film of the present invention is the side where the semiconductor wafer silicone adsorption film contacts the silicon wafer. The ribs of the semiconductor wafer silicone adsorption film of the present invention are the interval isolation fascias of the multi-zone semiconductor wafer silicone adsorption film. The 5-zone semiconductor wafer silicone adsorption film has 5 ribs, the 7-zone semiconductor wafer silicone adsorption film has 7 ribs, and the 8-zone semiconductor wafer silicone adsorption film has 8 ribs.

[0029] Preferably, the first cleaning, the second cleaning and the fourth cleaning are all performed in a clockwise direction from the center to the outside.

[0030] Preferably, the temperature of the preheat treatment in step (3) is 55°C to 65°C, for example, 55°C, 58°C, 60°C, 62°C or 65°C, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0031] Preferably, the preheating time in step (3) is 5 min to 15 min, for example, 5 min, 8 min, 10 min, 12 min or 15 min, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0032] Preferably, the temperature of the one-step drying treatment in step (3) is 95°C to 105°C, for example, 95°C, 98°C, 100°C, 102°C or 105°C, etc., not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0033] Preferably, the time for the one-step drying treatment in step (3) is 35 min to 45 min, for example, 35 min, 38 min, 40 min, 42 min or 45 min, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0034] Preferably, the temperature of the second-step drying treatment in step (4) is 45°C to 55°C, for example, 45°C, 48°C, 50°C, 52°C or 55°C, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0035] Preferably, the time for the two-step drying treatment in step (4) is 5 min to 15 min, for example, 5 min, 8 min, 10 min, 12 min or 15 min, etc., not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0036] As a preferred embodiment of the present invention, the method comprises the following steps:

[0037] (1) using an ultra-fine clean cloth dipped in ethanol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, after the first-washed semiconductor wafer silica gel adsorption film is rinsed with water, using a sponge dipped in a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film;

[0038] (2) using ultrapure water at 35° C. to 45° C. to perform a heated ultrasonic cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using an ultra-fine purification cloth dipped in isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning;

[0039] (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) at 55° C. to 65° C. for 5 min to 15 min to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film at 95° C. to 105° C. for 35 min to 45 min to obtain a preliminarily dried semiconductor wafer silica gel adsorption film;

[0040] (4) performing a second-step drying treatment on the preliminarily dried semiconductor wafer silica gel adsorption film at 45° C. to 55° C. for 5 min to 15 min to obtain a dry semiconductor wafer silica gel adsorption film.

[0041] Compared with the prior art, the present invention has the following beneficial effects:

[0042] (1) The method of the present invention is based on the material characteristics of the semiconductor wafer silica gel adsorption film silica gel, and adopts a method of multi-stage oven drying after enhanced cleaning. After effectively removing impurities on the semiconductor wafer silica gel adsorption film, the moisture adsorbed on the surface of the semiconductor wafer silica gel adsorption film is effectively removed, thereby avoiding changes in the structure of the semiconductor wafer silica gel adsorption film and maintaining the overall dryness of the semiconductor wafer silica gel adsorption film.

[0043] (2) The method of the present invention can gently heat the semiconductor wafer silica gel adsorption film to reduce the large temperature difference stimulation to the semiconductor wafer silica gel adsorption film; the first step of drying is to quickly evaporate the water of the product at 90-100°C to achieve the surface drying of the semiconductor wafer silica gel adsorption film product; the second step of slowly cooling is to avoid the impact caused by the sudden cooling of the product when it is taken out of the high-temperature drying oven. DETAILED DESCRIPTION

[0044] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0045] The semiconductor wafer silica gel adsorption film used in the embodiment of the present invention is a 7-zone semiconductor wafer silica gel adsorption film, and the sponge is a Scrap Clean, the brand is Cleanlay, which is a high-density nano sponge with strong decontamination magic eraser, which can effectively perform physical decontamination;

[0046] The full name of the ultra-fine purification cloth is ultra-fine fiber dust-free cloth (5009), and the manufacturer is Yuyao Shunyi Protective Products Co., Ltd.

[0047] Example 1

[0048] This embodiment provides a method for cleaning and drying a semiconductor wafer silica gel adsorption film, the method comprising the following steps:

[0049] (1) using an ultra-fine clean cloth dipped in ethanol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, after the first-washed semiconductor wafer silica gel adsorption film is rinsed with water, using a sponge dipped in a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film;

[0050] (2) using ultrapure water at 40° C. to perform a heated ultrasonic cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using an ultra-fine purification cloth dipped in isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning;

[0051] (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) at 60° C. for 10 min to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film at 100° C. for 40 min to obtain a preliminarily dried semiconductor wafer silica gel adsorption film;

[0052] (4) The preliminarily dried semiconductor wafer silica gel adsorption film is subjected to a second-step drying treatment at 50° C. for 10 minutes to obtain a dry semiconductor wafer silica gel adsorption film.

[0053] Example 2

[0054] This embodiment provides a method for cleaning and drying a semiconductor wafer silica gel adsorption film, the method comprising the following steps:

[0055] (1) using an ultra-fine clean cloth dipped in ethanol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, after the first-washed semiconductor wafer silica gel adsorption film is rinsed with water, using a sponge dipped in a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film;

[0056] (2) using ultrapure water at 35° C. to perform a heated ultrasonic cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using an ultra-fine purification cloth dipped in isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning;

[0057] (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) at 55° C. for 15 min to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film at 95° C. for 45 min to obtain a preliminarily dried semiconductor wafer silica gel adsorption film;

[0058] (4) The preliminarily dried semiconductor wafer silica gel adsorption film is subjected to a second-step drying treatment at 45° C. for 15 minutes to obtain a dry semiconductor wafer silica gel adsorption film.

[0059] Example 3

[0060] This embodiment provides a method for cleaning and drying a semiconductor wafer silica gel adsorption film, the method comprising the following steps:

[0061] (1) using an ultra-fine clean cloth dipped in ethanol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, after the first-washed semiconductor wafer silica gel adsorption film is rinsed with water, using a sponge dipped in a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film;

[0062] (2) using ultrapure water at 45° C. to perform a heated ultrasonic cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using an ultra-fine purification cloth dipped in isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning;

[0063] (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) at 65° C. for 5 min to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film at 105° C. for 35 min to obtain a preliminarily dried semiconductor wafer silica gel adsorption film;

[0064] (4) The preliminarily dried semiconductor wafer silica gel adsorption film is subjected to a second-step drying treatment at 55° C. for 5 minutes to obtain a dry semiconductor wafer silica gel adsorption film.

[0065] Example 4

[0066] The only difference between this embodiment and embodiment 1 is that the temperature of the preheating treatment is 50° C., and the other conditions and parameters are exactly the same as those in embodiment 1.

[0067] Example 5

[0068] The only difference between this embodiment and embodiment 1 is that the temperature of the preheating treatment is 70° C., and the other conditions and parameters are exactly the same as those in embodiment 1.

[0069] Example 6

[0070] The only difference between this embodiment and embodiment 1 is that the temperature of the one-step drying process is 90° C., and the other conditions and parameters are exactly the same as those in embodiment 1.

[0071] Example 7

[0072] The only difference between this embodiment and embodiment 1 is that the temperature of the one-step drying process is 110° C., and the other conditions and parameters are exactly the same as those in embodiment 1.

[0073] Example 8

[0074] The only difference between this embodiment and embodiment 1 is that the temperature of the second-step drying process is 40° C., and the other conditions and parameters are exactly the same as those in embodiment 1.

[0075] Example 9

[0076] The only difference between this embodiment and embodiment 1 is that the temperature of the second-step drying process is 60° C., and the other conditions and parameters are exactly the same as those of embodiment 1.

[0077] Comparative Example 1

[0078] The only difference between this comparative example and Example 1 is that ethanol cleaning is not performed, and other conditions and parameters are exactly the same as those in Example 1.

[0079] Comparative Example 2

[0080] The only difference between this comparative example and Example 1 is that surfactant cleaning is not performed, and other conditions and parameters are exactly the same as those in Example 1.

[0081] Comparative Example 3

[0082] The only difference between this comparative example and Example 1 is that ultrapure water heating ultrasonic cleaning is not performed, and other conditions and parameters are exactly the same as those in Example 1.

[0083] Comparative Example 4

[0084] The only difference between this comparative example and Example 1 is that isopropyl alcohol cleaning is not performed, and other conditions and parameters are exactly the same as those in Example 1.

[0085] Comparative Example 5

[0086] The only difference between this comparative example and Example 1 is that no preheating treatment is performed, and other conditions and parameters are exactly the same as those in Example 1.

[0087] Comparative Example 6

[0088] The only difference between this comparative example and Example 1 is that the second-step drying process is not performed, and the other conditions and parameters are exactly the same as those in Example 1.

[0089] Performance Test:

[0090] The impurity content of the semiconductor wafer silica gel adsorption film after cleaning, the water content after drying, and the structural stability of the semiconductor wafer silica gel adsorption film obtained in the test examples and comparative examples, wherein the definition standards of various impurity residues are shown in Table 1 below (various lateral conditions in the following table need to be met at the same time), and the number of oxide process wafers is divided into 10,000, 12,000, 15,000 and 18,000 grades. For example, if the number of oxide process wafers is more than 12,000 and less than 15,000, it is counted as 12,000 wafers:

[0091] Table 1

[0092]

[0093] The specific test results are shown in Table 2:

[0094] Table 2

[0095]

[0096]

[0097] As can be seen from Table 2, from Examples 1-3, the method of the present invention can obtain a low amount of impurity residues in the silica gel adsorption film of semiconductor wafers cleaned and dried, and the moisture can be completely removed, and the number of wafers used for oxide process can reach more than 18,000 pieces.

[0098] By comparing Example 1 with Examples 4-5, it can be seen that during the cleaning and drying process of the semiconductor wafer silica gel adsorption film of the present invention, the preheating temperature will affect the drying effect. When the preheating temperature is controlled at 55-65°C, the drying effect is better. The semiconductor wafer silica gel adsorption film product is mainly used in chip post-sputtering grinding processing, which requires very high stability. Too high preheating temperature will cause internal stress to product performance. If the internal stress is released at the client end at a later stage, the cause of the abnormality will be difficult to eliminate. Too low preheating temperature will result in poor initial moisture removal effect, affecting the subsequent drying effect, and will also affect the use effect of the silica gel adsorption film.

[0099] By comparing Example 1 with Examples 6-7, it can be seen that in the process of cleaning and drying the semiconductor wafer silica gel adsorption film described in the present invention, the temperature of the one-step drying treatment will affect the drying effect. When the temperature of the one-step drying treatment is controlled at 95-105°C, the drying effect is better. If the one-step drying temperature is too high, it will cause internal stress to the product performance and affect the subsequent use effect. If the one-step drying temperature is too low, the moisture is not removed cleanly, affecting the subsequent use.

[0100] By comparing Example 1 with Example 8-9, it can be seen that during the cleaning and drying process of the semiconductor wafer silica gel adsorption film of the present invention, the temperature of the two-step drying process will affect the drying effect. The temperature of the two-step drying process is controlled at 45-55°C, and the drying effect is better. The semiconductor wafer silica gel adsorption film product is mainly used for chip sputtering and grinding, which requires very high stability. If the temperature of the two-step drying is too low and the temperature difference with the one-step drying is too large, the structural stability of the silica gel adsorption film will deteriorate, and the drying effect will also decrease. If the temperature of the two-step drying is too high, the structure of the silica gel adsorption film will also be destroyed. The temperature of the present invention can avoid the impact of large temperature differences on the product.

[0101] By comparing Example 1 with Comparative Example 1, it can be seen that cleaning with ethanol can remove some impurities and static electricity on the surface of the semiconductor wafer silica gel adsorption film product, so as to facilitate subsequent surface activation treatment.

[0102] By comparing Example 1 and Comparative Example 2, it can be seen that the impurities brought by the strong adsorption capacity of the silica gel adsorption film of the semiconductor wafer can be effectively removed by surfactant cleaning.

[0103] By comparing Example 1 with Comparative Example 3, it can be seen that using heated ultrapure water for ultrasonic cleaning can enhance the surface activity of the silica gel adsorption film on the semiconductor wafer and accelerate the ultrasonic removal of surface impurities.

[0104] By comparing Example 1 and Comparative Example 4, it can be seen that the use of isopropyl alcohol for cleaning can enhance the surface activity of the silica gel adsorption film on the semiconductor wafer, remove impurities adsorbed on the surface, and can effectively remove the watermarks left by pure water ultrasonic cleaning.

[0105] From the comparison between Example 1 and Comparative Example 5, it can be seen that adding a preheating process can gently heat the semiconductor wafer silicone adsorption film and reduce the large temperature difference stimulation received by the semiconductor wafer silicone adsorption film.

[0106] From the comparison between Example 1 and Comparative Example 6, it can be seen that the present invention slowly evaporates the water from the product through the second drying step, thereby achieving surface drying of the semiconductor wafer silica gel adsorption film product.

[0107] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for cleaning and drying a semiconductor wafer silica gel adsorption film, characterized in that: The method comprises the following steps: (1) using alcohol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, and using a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film; (2) using ultrapure water to perform a third cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning; (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film to obtain a preliminarily dried semiconductor wafer silica gel adsorption film; (4) The initially dried semiconductor wafer silica gel adsorption film is subjected to a two-step drying process to obtain a dried semiconductor wafer silica gel adsorption film.

2. The method according to claim 1, characterized in that The semiconductor wafer silica gel adsorption film in step (1) comprises a multi-zone semiconductor wafer silica gel adsorption film; Preferably, the alcohol in step (1) comprises ethanol; Preferably, the cleaning carrier used for the alcohol in step (1) comprises an ultra-fine purification cloth; Preferably, in step (1), water shower treatment is performed after the first cleaning.

3. The method according to claim 1 or 2, characterized in that The surfactant in step (1) comprises sodium dodecylbenzene sulfonate; Preferably, the cleaning carrier used for the surfactant in step (1) comprises a sponge.

4. The method according to any one of claims 1 to 3, characterized in that: The third cleaning in step (2) includes heated ultrasonic cleaning; Preferably, the temperature of the heated ultrasonic cleaning in step (2) is 35°C to 45°C.

5. The method according to any one of claims 1 to 4, characterized in that: The cleaning carrier used for the isopropyl alcohol in step (2) includes an ultra-fine purification cloth.

6. The method according to any one of claims 1 to 5, characterized in that: The cleaning parts of the first cleaning, the second cleaning and the fourth cleaning all include the front side, the back side and each rib position of the semiconductor wafer silica gel adsorption film; Preferably, the first cleaning, the second cleaning and the fourth cleaning are all performed in a clockwise direction from the center to the outside.

7. The method according to any one of claims 1 to 6, characterized in that: The temperature of the preheating treatment in step (3) is 55°C to 65°C; Preferably, the preheating treatment time in step (3) is 5 min to 15 min.

8. The method according to any one of claims 1 to 7, characterized in that: The temperature of the one-step drying treatment in step (3) is 95°C to 105°C; Preferably, the drying time in step (3) is 35 to 45 minutes.

9. The method according to any one of claims 1 to 8, characterized in that: The temperature of the second-step drying treatment in step (4) is 45°C to 55°C; Preferably, the time for the two-step drying treatment in step (4) is 5 min to 15 min.

10. The method according to any one of claims 1 to 9, characterized in that: The method comprises the following steps: (1) using an ultra-fine clean cloth dipped in ethanol to perform a first cleaning on the semiconductor wafer silica gel adsorption film to obtain a first-washed semiconductor wafer silica gel adsorption film, after the first-washed semiconductor wafer silica gel adsorption film is rinsed with water, using a sponge dipped in a surfactant to perform a second cleaning on the first-washed semiconductor wafer silica gel adsorption film to obtain a second-washed semiconductor wafer silica gel adsorption film; (2) using ultrapure water at 35° C. to 45° C. to perform a heated ultrasonic cleaning on the second-washed semiconductor wafer silica gel adsorption film to obtain a third-washed semiconductor wafer silica gel adsorption film, and using an ultra-fine purification cloth dipped in isopropyl alcohol to perform a fourth cleaning on the third-washed semiconductor wafer silica gel adsorption film to complete the cleaning; (3) preheating the semiconductor wafer silica gel adsorption film obtained in step (2) at 55° C. to 65° C. for 5 min to 15 min to obtain a preheated semiconductor wafer silica gel adsorption film, and performing a one-step drying treatment on the preheated semiconductor wafer silica gel adsorption film at 95° C. to 105° C. for 35 min to 45 min to obtain a preliminarily dried semiconductor wafer silica gel adsorption film; (4) performing a second-step drying treatment on the preliminarily dried semiconductor wafer silica gel adsorption film at 45° C. to 55° C. for 5 min to 15 min to obtain a dry semiconductor wafer silica gel adsorption film.

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