Infrared laser light intensity detection card and preparation method and application thereof
By using the energy transfer upconversion light luminescence mechanism of NaYF4 doped rare earth ion upconverting materials in infrared laser detection cards, the accuracy and cost problems of infrared laser light intensity judgment are solved, and low-cost, visual infrared laser light intensity detection is achieved , suitable for infrared lasers in the wavelength range of 850 to 1550nm.
Patent Information
- Application Number
- CN202411300039.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-01-10
AI Technical Summary
Existing infrared laser detection cards cannot accurately judge the laser power characteristics of infrared lasers, and the cost is high. Infrared detection cards on the market are prone to luminous wavelength widening problems, and the light intensity of infrared lasers cannot be visually judged.
Using upconversion materials including NaYF4 and its doped rare earth ions (Yb3+ and Er3+), through the energy transfer upconversion luminescence mechanism, different colors of visible light are generated according to the number and wavelength of absorbed photons, thereby visualizing the intensity of infrared laser light. Combining the colorimetric card and packaging layer ensures detection accuracy and stability.
The visual judgment of the light intensity of infrared lasers at specific wavelengths is achieved, the problem of luminescence wavelength widening is avoided, production costs are reduced, and power is not required, which is easy to use and large-scale promotion.
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Figure CN119290155A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of infrared detection technology, and in particular to an infrared laser light intensity detection card and a preparation method and application thereof. Background Art
[0002] Infrared light is light with a wavelength greater than 750nm and is invisible to the naked eye. Infrared lasers play an important role in medical diagnosis and material analysis. For example, they can assist in measuring blood sugar and blood oxygen, assist in detecting the hardness and light transmittance of materials, assist in detecting the functional groups contained in organic matter, and monitor the progress of reactions.
[0003] With the widespread popularity of infrared lasers, a quick infrared laser detection device has become an urgent need in the market. At present, infrared laser detection devices can be roughly divided into two types. One is an infrared photoelectric detector made of materials sensitive to infrared wavelengths. The principle of this type of device is to convert the original optical signal into an electrical signal, and then obtain the detection result after a series of processing. Although this type of detector can accurately feedback the wavelength, light intensity, laser power, phase and other information of the infrared laser signal, it is expensive. The other is an infrared detection card that is sensitive to a specific infrared band and is manufactured using the principle of visible light upconversion.
[0004] The principle of visible light upconversion is to use the electrons of the upconversion material to absorb two or more photons in the infrared band for transition. When the electrons transition back to the original energy layer, only a single photon is released. If the number of absorbed photons and their wavelengths are appropriate, photons in the visible light band will be emitted. Infrared detection cards on the market are prone to wavelength broadening problems, so they can only determine whether infrared lasers are emitted by whether they emit light, but cannot determine the laser power characteristics of infrared lasers. However, in actual production and life, the power of infrared lasers is also very important.
[0005] Therefore, it is necessary to provide an infrared laser detection card that can visually determine the intensity of lasers of a specific wavelength, and to reduce the detection accuracy and production cost of the infrared laser detection card as much as possible. Summary of the invention
[0006] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes an infrared laser light intensity detection card, which can visually determine the light intensity of infrared lasers of a specific wavelength and has a low cost.
[0007] The invention also provides a method for preparing the infrared laser light intensity detection card.
[0008] The present invention also provides application of the infrared laser light intensity detection card.
[0009] According to an embodiment of the first aspect of the present invention, there is provided an infrared laser light intensity detection card, the infrared laser light intensity detection card comprising:
[0010] basal layer;
[0011] A colorimetric card, the colorimetric card being arranged on the surface of the base layer;
[0012] An up-conversion material, wherein the up-conversion material is disposed on the surface of the substrate layer;
[0013] The up-conversion material includes NaYF 4 And rare earth ions doped therein; the rare earth ions include Yb 3+ and Er 3+ At least one of .
[0014] The infrared laser light intensity detection card according to the embodiment of the present invention has at least the following beneficial effects:
[0015] The up-conversion materials used in the present invention have a variety of luminescence mechanisms, such as excited state absorption (ESA), energy transfer up-conversion (ETU), cooperative sensitization up-conversion (CSU), photon avalanche (PA) and energy transfer-mediated up-conversion (EMU) luminescence mechanisms. Among them, ETU is a typical up-conversion luminescence process, in which a rare earth ion absorbs infrared photons, and its neighboring rare earth ions with matching energy levels are placed in a higher excited state energy level through energy transfer, cross relaxation and other processes to produce up-conversion luminescence. The photon up-conversion process involves two or more photons. Depending on the number of absorbed photons, the energy level heights of the excited electrons are different, and further, the colors of the visible light emitted by the electron de-excitation are different. Therefore, although the wavelength of the incident light is constant, the power (light intensity) is different, and the proportion (i.e., color) of the luminescence of the up-conversion material is also different. Therefore, the present invention can visualize the laser light intensity for infrared lasers of a specific wavelength (if the up-conversion material is fixed) by using suitable up-conversion materials.
[0016] Furthermore, in the up-conversion material provided by the present invention, at least two rare earth ions are doped, thereby forming a multi-component rare earth up-conversion material, each of which can emit light of a different wavelength when irradiated by an infrared laser; the multi-component rare earth up-conversion material emits light of multiple different wavelengths, which, after cross-blending, produce visible light of a specific color, making it easier to visually judge the light intensity of the infrared laser.
[0017] In the infrared laser light intensity detection card provided by the present invention, the problem of broadening the luminous wavelength is avoided by adopting a specific up-conversion material. At the same time, by adjusting the specific ratio of the up-conversion material, the infrared laser light intensity detection card can respond to infrared lasers with a wavelength of 850 to 1550 nm and / or a light intensity of 1 μW to 100 mW, and the luminous color can be adjusted from red (620 to 660 nm) to green (520 to 560 nm) to blue (440 to 480 nm). It has a wide range of applications and low cost.
[0018] The infrared laser intensity detection card provided by the present invention is more practical through structural adjustment. Specifically, the presence of the base layer makes it easy to take and the presence of the colorimetric card makes it easy to visually determine the intensity of the infrared laser. No power supply is required during use, which is more convenient.
[0019] According to some embodiments of the present invention, the base layer is a flexible base layer or a rigid base layer.
[0020] According to some embodiments of the present invention, the base layer comprises at least one of a paperboard, a plastic plate, a glass plate, a ceramic plate or a metal plate.
[0021] According to some embodiments of the present invention, the coating thickness of the up-conversion material on the surface of the substrate layer is 1-10 μm, for example, about 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm or about 9 μm.
[0022] According to some embodiments of the present invention, in the up-conversion material, the rare earth ion is Yb 3+ and Er 3+ Among them, Yb 3+ and Er 3+ The molar ratio is 1:1 to 2. For example, it can be about 1:1.5.
[0023] According to some embodiments of the present invention, in the up-conversion material, the molar percentage of the rare earth ions / (rare earth ions+Y) is 20-80%, for example, about 30%, 40%, 50%, 60% or about 70%.
[0024] According to some embodiments of the present invention, the up-conversion material is selected from NaY 1-x-y Yb x Er y F 4; Wherein, 0.01≤y≤0.2, the specific value of y can be about 0.05, 0.1 or about 0.15; 0.2≤x≤0.8, the specific value of x can be about 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7 or about 0.75. Thus, the infrared laser light intensity detection card can detect the presence of infrared laser with a wavelength of about 980nm and its light intensity; during the infrared laser detection process, Yb 3+ Absorbing near-infrared photons (minhua ions), the energy-matched rare earth ions (Er 3+ 、Tm 3+ 、Ho 3+ Wait, this is Er 3+ ) through energy transfer, cross relaxation and other processes to make it in a higher excited state energy level to produce upconversion luminescence (luminescent ions). More specifically, the electron transition orbit can have the following ways: 2 H 11 / 2 -> 4 I 3 / 2 , 4 S 3 / 2 -> 4 I 15 / 2 , 4 F 9 / 2 -> 4 I 15 / 2 They correspond to 524nm (green light), 564nm (green light) and 654nm (red light). That is, when the infrared laser with a wavelength of 980nm irradiates the infrared laser intensity detection card, when the light intensity is different, the up-conversion material will emit visible light of different colors.
[0025] According to some embodiments of the present invention, in the up-conversion material, the value range of x+y is 1-50%, for example, about 10%, 20%, 30% or about 40%. By adjusting the doping ratio, the position of the luminescence peak of the up-conversion material can be adjusted.
[0026] According to some embodiments of the present invention, the luminescent color of the up-conversion material under the excitation of infrared light includes at least one of blue, green and red. The specific color is determined by the material of the up-conversion material and the light intensity of the infrared laser. In actual operation, blue light, cyan light (blue + green), green light, yellow light (green + red), red light, and even white light (red + green + blue) can be obtained.
[0027] According to some embodiments of the present invention, the infrared laser light intensity detection card further comprises a packaging layer, and the packaging layer covers the up-conversion material, thereby preventing the up-conversion material from contacting substances in the air, and improving the stability and service life of the infrared laser light intensity detection card.
[0028] According to some embodiments of the present invention, the material of the encapsulation layer includes UV curable resin.
[0029] According to some embodiments of the present invention, the thickness of the encapsulation layer is 80-120 μm, for example, about 90 μm, 100 μm or about 110 μm.
[0030] According to some embodiments of the present invention, the infrared laser light intensity detection card can respond to an infrared light intensity range of 1μW to 100mW, for example, about 1mW, 5mW, 10mW, 15mW, 20mW, 25mW, 30mW, 35mW, 40mW, 45mW, 50mW, 55mW, 60mW, 65mW, 70mW, 75mW, 80mW, 85mW, 90mW or about 95mW.
[0031] According to some embodiments of the present invention, the infrared laser light intensity detection card can respond to infrared light wavelengths ranging from 850 to 1550 nm, for example, about 900 nm, 950 nm, 1000 nm, 1050 nm, 1100 nm, 1150 nm, 1200 nm, 1250 nm, 1300 nm, 1350 nm, 1400 nm, 1450 nm or about 1500 nm.
[0032] According to an embodiment of the second aspect of the present invention, a method for preparing the infrared laser light intensity detection card is provided, and the preparation method comprises the following steps:
[0033] S1. Obtaining and printing the colorimetric card on the base layer;
[0034] S2. Coating the up-conversion material on the base layer.
[0035] Since the preparation method adopts all the technical solutions of the infrared laser light intensity detection card of the above embodiment, it has at least all the beneficial effects brought by the technical solutions of the above embodiment. Furthermore, the preparation method is simple to operate and easy to implement, which facilitates the large-scale promotion and use of the infrared laser light intensity detection card.
[0036] According to some embodiments of the present invention, in step S1, the method for obtaining the colorimetric card includes the following steps:
[0037] When the wavelength is constant, the up-conversion material is irradiated with infrared light of a specific light intensity, the luminescent color coordinates of the up-conversion material are obtained, and the comparison relationship between the color coordinates and the light intensity is obtained;
[0038] Repeat the above steps to obtain the luminescent color coordinates of the up-conversion material within a commonly used light intensity range, and arrange the obtained luminescent color coordinates in the order of light intensity.
[0039] According to some embodiments of the present invention, in step S2, the method for obtaining the up-conversion material comprises the following steps:
[0040] S2a. Mix NaYF in proportion 4 and rare earth ion sources;
[0041] S2b. Calcine the mixture obtained in step S2a under an inert atmosphere.
[0042] According to some embodiments of the present invention, in step S2a, the rare earth ion source is selected from YbCl 3 Yb(NO 3 ) 3 、ErCl 3 and Er(NO 3 ) 3 At least one of .
[0043] According to some embodiments of the present invention, in step S2b, the calcination time is 1 to 10 hours, for example, about 2 hours, 3 hours, 4 hours, 5 hours, 6 hours, 7 hours, 8 hours or about 9 hours.
[0044] According to some embodiments of the present invention, in step S2b, the calcination temperature is 300-600°C, for example, about 350°C, 400°C, 450°C, 500°C or about 550°C.
[0045] According to some embodiments of the present invention, the method for obtaining the upconversion material further comprises, after step S2b, washing and drying the obtained calcined product.
[0046] The detergent used for the washing includes at least one of water and ethanol.
[0047] The drying method includes vacuum drying.
[0048] According to some embodiments of the present invention, in step S2, the coating method includes at least one of spin coating and spray coating.
[0049] According to some embodiments of the present invention, in step S2, the slurry used for coating includes the up-conversion material and a solvent. The solvent includes at least one of water and ethanol. The mass concentration of the slurry is 1 to 10%. For example, it can be about 2%, 3%, 4%, 5%, 6%, 7%, 8% or about 9%.
[0050] According to some embodiments of the present invention, the preparation method further comprises, after step S2, forming an encapsulation layer on the surface of the up-conversion material. Specifically,
[0051] The encapsulation layer can be formed by relying on a plastic packaging machine.
[0052] According to an embodiment of the third aspect of the present invention, a method for calibrating infrared laser intensity is provided, the calibration method comprising the following steps:
[0053] D1. Determine the required light intensity N;
[0054] Irradiating the infrared laser intensity detection card with an infrared laser of unknown light intensity X;
[0055] D2. Compare the luminescent color of the infrared laser intensity detection card on the conversion material and the color of the colorimetric card to determine the value of X;
[0056] D3. Compare the size of X and N; if they are equal, end;
[0057] If they are not equal, return to step D1, adjust X, and then repeat steps D1 to D2.
[0058] Since the calibration method adopts all the technical solutions of the infrared laser light intensity detection card of the above embodiment, it has at least all the beneficial effects brought by the technical solutions of the above embodiment.
[0059] There is a certain corresponding relationship between light intensity and power. The power adjustment of the infrared laser generator is easy to adjust the light intensity. In actual production, the corresponding light intensity can be expressed by power.
[0060] If there is no special explanation, the actual meaning of “about” in the present invention is that the error is allowed to be within the range of ±2%, for example, about 100 is actually 100±2%×100.
[0061] Unless otherwise specified, “between” in the present invention includes the number itself, for example, “between 2 and 3” includes the endpoint values 2 and 3.
[0062] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0063] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0064] Figure 1 It is a schematic diagram of the process of preparing up-conversion material in Example 1 of the present invention.
[0065] Figure 2 It is a schematic diagram of the process of preparing an infrared laser light intensity detection card in Example 1 of the present invention.
[0066] Figure 3 It is a schematic diagram of the structure of the infrared laser light intensity detection card obtained in Example 1 of the present invention.
[0067] Figure 4 It is a schematic diagram of the process of calibrating the infrared laser intensity in the application example of the present invention.
[0068] Figure 5 The luminescence spectrum of the upconversion material after the infrared laser intensity detection card obtained in Example 1 is irradiated with a 980nm 34.2mW infrared laser;
[0069] Figure 6 The luminescent color mark of the conversion material on the infrared laser intensity detection card obtained in Example 1 after being irradiated with a 980nm 34.2mW infrared laser;
[0070] Figure 7 The luminescence spectrum of the upconversion material after the infrared laser intensity detection card obtained in Example 1 is irradiated with a 980nm 7.5mW infrared laser;
[0071] Figure 8 This is the luminescent color mark of the conversion material on the infrared laser intensity detection card obtained in Example 1 after being irradiated with a 980nm 7.5mW infrared laser. DETAILED DESCRIPTION
[0072] The following will be combined with the embodiments to clearly and completely describe the concept of the present invention and the technical effects produced, so as to fully understand the purpose, characteristics and effects of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative work are all within the scope of protection of the present invention.
[0073] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0074] Example 1
[0075] In this example, an infrared laser intensity detection card is prepared. The specific structure is as follows Figure 3 As shown; the infrared laser light intensity detection card provided in this example has:
[0076] A base layer, the base layer is a glass plate;
[0077] Upconversion material: The upconversion material is coated on the surface of the substrate layer with a thickness of about 5 μm; the material is NaY 0.5 Yb 0.2 Er 0.3 F 4 ; NaYF 4 50% rare earth ions are doped in the quartz crystal (rare earth ions: (rare earth ions + Y) molar ratio); the rare earth ions are Yb and Er in a molar ratio of 2:3;
[0078] Colorimetric card: The colorimetric card is printed on the surface of the substrate layer. The colorimetric card shows the corresponding relationship between the color displayed by the up-conversion material and the infrared laser intensity when the up-conversion material is irradiated with an infrared laser having a wavelength of 980 nm. Among them, the infrared laser intensity point values displayed on the colorimetric card are 1mW, 10mW, 20mW, 30mW, 40mW, 50mW, 60mW, 70mW, 80mW and 90mW.
[0079] The encapsulation layer covers the up-conversion material and is made of UV curable resin with a thickness of 100 μm.
[0080] The process of preparing the infrared laser intensity detection card in this example is as follows Figure 2 As shown, the specific steps are:
[0081] S1. Clean the substrate layer to facilitate the subsequent printing of the colorimetric card and the coating of the upconversion material;
[0082] Obtaining and printing a color chart on a substrate layer;
[0083] S2. coating an upconversion material on the substrate layer;
[0084] S3. Use a plastic packaging machine to package the components obtained in step S2 to form a packaging layer.
[0085] The method for obtaining the colorimetric card comprises the following steps:
[0086] The specific up-conversion material used in this example is irradiated with an infrared laser with a wavelength of 980nm and powers of 1mW, 10mW, 20mW, 30mW, 40mW, 50mW, 60mW, 70mW, 80mW and 90mW respectively to obtain the luminescent color coordinates of the up-conversion material and obtain a comparison relationship between the color coordinates and light intensity; the obtained luminescent color coordinates are arranged in the order of light intensity.
[0087] In step S2, the up-conversion material is obtained by referring to Figure 1 As shown, the specific steps are:
[0088] S2a. NaYF 4 Yb(NO 3 )3 and Er(NO 3 ) 3 mix;
[0089] S2b. The mixture obtained in step S2a was calcined at 500°C for 8h under an inert atmosphere (argon).
[0090] S2c. After the calcined product of step S2b is cooled, it is taken out, washed with water three times, and after solid-liquid separation, the obtained solid is vacuum dried; the vacuum drying temperature is 60°C.
[0091] In step S2, the upconversion material is coated by mixing the upconversion material obtained in step S2c with ethanol to prepare a slurry with a mass concentration of 5%, and spin-coating the slurry onto the surface of the substrate to form an upconversion material layer with a thickness of about 5 μm.
[0092] Application Examples
[0093] In this example, the infrared laser intensity detection card obtained in the embodiment is used to calibrate the unknown infrared laser intensity. The process is as follows: Figure 4 As shown, the specific steps are:
[0094] D1. Determine the required light intensity (power) N;
[0095] The infrared laser intensity detection card obtained by irradiating the embodiment with an infrared laser of unknown light intensity (power) X;
[0096] D2. Compare the luminescent color of the upconversion material on the infrared laser intensity detection card and the color of the colorimetric card to determine the value (or range) of X;
[0097] D3. Compare the size of X and N; if they are equal (or equivalent), then end;
[0098] If they are not equal, return to step D1, adjust X, and then repeat steps D1 to D2.
[0099] Test Case
[0100] In the first aspect of this example, the display accuracy of the infrared laser light intensity detection card obtained in the embodiment was tested. Specifically, the infrared laser light intensity detection card was irradiated with infrared lasers with a wavelength of 980nm and powers of 34.2mW and 7.5mW, respectively, and the luminescence spectrum and color coordinates of the upconversion material therein were recorded; and the obtained color coordinates were compared with the colorimetric card.
[0101] The results show that after irradiation with an infrared laser of 34.2mW power, the color coordinates of the light emitted by the up-conversion material are between 30 and 40mW on the colorimetric card; similarly, after irradiation with an infrared laser of 7.5mW power, the color coordinates of the light emitted by the up-conversion material are between 1 and 10mW on the colorimetric card. This shows that the infrared laser intensity detection card provided by the present invention can detect the intensity of the infrared laser by visual inspection; further, in actual production, the error of infrared laser intensity detection can be further reduced by optimizing the interval of standard light intensity in the colorimetric card.
[0102] Specifically, after irradiation with an infrared laser of 34.2 mW intensity, the luminescence spectrum and color coordinates of the upconversion material are as follows: Figures 5-6 As shown, the color displayed at this time is yellow-green.
[0103] Specifically, after irradiation with an infrared laser of 7.5 mW intensity, the luminescence spectrum and color coordinates of the upconversion material are as follows: Figures 7-8 As shown, at this time, the red light emission of the up-conversion material will be greatly weakened, and the overall displayed color is mainly green.
[0104] The second aspect of this example tests the consistency of the infrared laser light intensity detection card obtained in the embodiment. The specific steps are: using an infrared laser of the same wavelength and light intensity to repeatedly irradiate the infrared laser light intensity detection card, obtaining the color value of the light emitted by the upconversion material after each irradiation; and comparing the consistency of the color value after multiple irradiations. The results show that the infrared laser light intensity detection card provided by the present invention has excellent consistency and can work stably.
[0105] The third aspect of this example tests the service life of the infrared laser light intensity detection card obtained in the embodiment, specifically by subjecting it to high temperature and high humidity accelerated aging, measuring its luminous intensity attenuation and luminous color coordinate change under the same infrared laser irradiation, and determining its service life. The results show that the infrared laser light intensity detection card provided by the present invention has relatively stable weather resistance and service life.
[0106] In summary, the infrared laser intensity detection card provided by the present invention has the function of visually detecting laser intensity by selecting appropriate up-conversion materials and structural settings, and at the same time has many advantages such as low cost, high accuracy, excellent consistency and stability. It is precisely because of the above advantages that the infrared laser intensity detection card provided by the present invention is expected to be widely used in laser intensity calibration.
[0107] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.
Claims
1. An infrared laser light intensity detection card, characterized in that: The infrared laser light intensity detection card comprises: basal layer; A colorimetric card, the colorimetric card being arranged on the surface of the base layer; An up-conversion material, wherein the up-conversion material is disposed on the surface of the substrate layer; The up-conversion material includes NaYF4 and rare earth ions doped therein; the rare earth ions include Yb 3+ and Er 3+ At least one of .
2. The infrared laser light intensity detection card according to claim 1, characterized in that: The up-conversion material is selected from NaY 1-x-y Yb x Er y F4; where 0.01≤y≤0.2, 0.2≤x≤0.
8.
3. The infrared laser light intensity detection card according to claim 2, characterized in that: In the up-conversion material, the value range of x+y is 1-50%.
4. The infrared laser light intensity detection card according to claim 1, characterized in that: The luminescent color of the up-conversion material under the excitation of infrared light includes at least one of blue, green and red; and / or, the infrared laser light intensity detection card can respond to an infrared light intensity range of 1 μW to 100 mW.
5. A method for preparing an infrared laser intensity detection card as claimed in any one of claims 1 to 4, characterized in that: The preparation method comprises the following steps: S1. Obtaining and printing the colorimetric card on the base layer; S2. Coating the up-conversion material on the base layer.
6. The preparation method according to claim 5, characterized in that: In step S1, the method for obtaining the colorimetric card includes the following steps: When the wavelength is constant, the up-conversion material is irradiated with infrared light of a specific light intensity, the luminescent color coordinates of the up-conversion material are obtained, and the comparison relationship between the color coordinates and the light intensity is obtained; Repeat the above steps to obtain the luminescent color coordinates of the up-conversion material within a commonly used light intensity range, and arrange the obtained luminescent color coordinates in the order of light intensity.
7. The preparation method according to claim 5, characterized in that: In step S2, the method for obtaining the up-conversion material comprises the following steps: S2a. Mix NaYF4 and rare earth ion source in proportion; S2b. Calcine the mixture obtained in step S2a under an inert atmosphere.
8. The preparation method according to claim 7, characterized in that: In step S2b, the calcination time is 1 to 10 hours; and / or, in step S2b, the calcination temperature is 300 to 600°C.
9. The preparation method according to claim 7, characterized in that: The rare earth ion source is selected from at least one of YbCl3, Yb(NO3)3, ErCl3 and Er(NO3)3.
10. A method for calibrating infrared laser intensity, characterized in that: The calibration method comprises the following steps: D1. Determine the required light intensity N; Irradiating the infrared laser intensity detection card as claimed in any one of claims 1 to 4 with an infrared laser of unknown light intensity X; D2. Compare the luminescent color of the infrared laser intensity detection card on the conversion material and the color of the colorimetric card to determine the value of X; D3. Compare the size of X and N; if they are equal, end; If they are not equal, return to step D1, adjust X, and then repeat steps D1 to D2.
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