Two-wire system pressure sensor and integration method thereof

Abstract

The invention discloses a two-wire system pressure sensor and an integration method thereof, and aims to solve the technical problems that a traditional two-wire system pressure sensor is large in size, low in reliability, easy to interfere and low in integration level. A two-wire system pressure sensor comprises a metal shell tube seat and a metal cover plate, and the metal shell tube seat is fixedly provided with a lead column, a multilayer ceramic substrate, a pressure core body and a heat conduction substrate; a triode is arranged on the heat conduction substrate; a conditioning chip, a surface-mounted capacitor and a surface-mounted resistor are fixed on the multilayer ceramic substrate, and a power supply chip is fixed on the conditioning chip. The invention discloses a two-wire system pressure sensor integration method. The method comprises the steps of fixing components, assembling a multilayer ceramic plate and a metal shell tube socket, connecting the components, and packaging the structure. The integration method and the pressure sensor are high in integration, stable in signal transmission and easy to manufacture and maintain.

Description

Technical Field

[0001] The present invention relates to the technical field of pressure sensors, and in particular to a two-wire pressure sensor and an integration method thereof. Background Art

[0002] The two-wire pressure sensor is a universal pressure sensor that can transmit 4mA to 20mA standard current. It is simple to use, highly reliable, and can meet long-distance signal transmission requirements. It is widely used in aero engines, anti-icing systems, altitude detection systems, missile hydraulic detection systems, underwater braking systems and other fields, and has broad application prospects.

[0003] From the perspective of circuit principle, the two-wire pressure sensor consists of two parts. The first part is the pressure core, which directly senses the pressure and outputs a weak voltage signal. The second part is the signal conditioning circuit, which mainly provides excitation for the pressure core, compensates for the weak voltage signal, amplifies it and converts it into a current signal.

[0004] The traditional two-wire pressure sensor is designed in two parts from a structural point of view, and the two parts are connected together. The current mainstream manufacturing process of two-wire pressure sensors is that the pressure core is encapsulated in a cylindrical metal body, a long cavity extends from the outside of the metal body, and the conditioning circuit is welded on the printed circuit board in the form of a discrete device, and the printed circuit board is fixed in the long cavity outside the metal body. The conditioning circuit is connected to the pressure core through welding leads. The traditional two-wire pressure sensor is large in size and cannot meet the overall needs of the new generation of aircraft engines, cabin air pressure detection systems, miniaturized missile-borne pressure control systems, etc. Since the conditioning circuit and the pressure core are connected by manual welding wires, there is a risk of breakage at the solder joints, the reliability will be reduced in complex environments, and the pressure signal transmission path is long and easily interfered.

[0005] In summary, the traditional two-wire pressure sensor has the problems of large size, susceptibility to interference, low reliability and low integration. Therefore, it is necessary to design a two-wire pressure sensor that innovates in structural design to improve integration, reduce size, and enhance reliability and anti-interference ability. Summary of the invention

[0006] The object of the present invention is to provide a two-wire pressure sensor and an integration method thereof, so as to overcome the shortcomings of the traditional two-wire pressure sensor, such as large volume, low reliability, susceptibility to interference and low integration.

[0007] In order to achieve the above object, the present invention adopts the following technical solution: A two-wire pressure sensor includes a metal shell tube seat, a metal cover plate is placed on the metal shell tube seat, a plurality of lead posts are arranged in the metal shell tube seat, and the lead posts are evenly distributed at the outer side of the metal shell tube seat; the bottom surface of the metal shell tube seat is circular, and the distance from each lead post to the center of the bottom surface of the metal shell tube seat is equal.

[0008] A multilayer ceramic substrate, a pressure core, and a heat-conducting substrate are arranged in the metal shell tube seat. A transistor is arranged on the heat-conducting substrate. A conditioning chip is fixed on the multilayer ceramic substrate. A power chip is fixed on the conditioning chip. A plurality of surface-mounted capacitors and a plurality of surface-mounted resistors are also fixed on the multilayer ceramic substrate.

[0009] Furthermore, the multilayer ceramic substrate is provided with two through cavities, namely a first through cavity and a second through cavity; and the multilayer ceramic substrate is also provided with a plurality of through holes.

[0010] Furthermore, the pressure core is located in the first through cavity, the heat conductive substrate is located in the second through cavity, the number and position of the through holes correspond to the number and position of the lead posts, and the lead posts are respectively located in the through holes.

[0011] Furthermore, the pressure core, power chip, conditioning chip and transistor are all electrically connected to the multilayer ceramic substrate via bonding wires.

[0012] Furthermore, a lead is arranged in the lead column on the metal shell tube seat, the lead is gold-plated, and the lead is electrically connected to the multilayer ceramic substrate through gold wire bonding, and the power supply, control signal, communication signal and output current signal are led out through the lead.

[0013] Furthermore, the surface and interior of the multilayer ceramic substrate are wired. The pressure core is bonded to the metal shell tube socket with insulating glue, the thermal conductive substrate is welded to the metal shell tube socket, and the transistor is welded to the thermal conductive substrate, and the thermal conductive substrate is used to dissipate heat for the transistor. The pressure core is used to sense external pressure and output a weak voltage signal under the stimulation of the conditioning chip. The conditioning chip amplifies and compensates the weak voltage signal and then outputs a voltage signal, which is converted into a current signal output through the transistor. The power chip converts the external power supply voltage into a +5V voltage to power the conditioning chip.

[0014] A two-wire pressure sensor integration method, the integration method is used to integrate the above-mentioned two-wire pressure sensor, the two-wire pressure sensor integration method comprises the following steps: S1, solder the surface mount capacitors and the surface mount resistors on the multilayer ceramic substrate, bond the conditioning chip on the multilayer ceramic substrate, and bond the power chip stack on the conditioning chip; solder the transistor on the thermal conductive substrate, and then fix the thermal conductive substrate and the pressure core on the corresponding positions of the metal shell tube socket respectively; S2, bonding and mounting the multilayer ceramic substrate in the metal housing socket; S3, connecting the pressure core, the conditioning chip, the power chip, the transistor, the thermal conductive substrate and the multilayer ceramic substrate; S4, filling the interior of the metal shell tube seat with liquid medium; S5, sealing and welding the metal cover plate and the metal shell tube seat to form a sealed body.

[0015] Furthermore, when the surface mount capacitors and the surface mount resistors are welded on the multilayer ceramic substrate, welding is performed using a low-temperature solder paste, and the multilayer ceramic substrate is cleaned after welding. The multilayer ceramic substrate uses an LTCC (Low Temperature Co-fired Ceramics) substrate. The multilayer ceramic substrate has a total of 8 layers of wiring, and the line width and line spacing are both set to 120μm.

[0016] Furthermore, the pads on the multilayer ceramic substrate are platinum pads, and the pads at the bonding position of the conditioning chip and near the through hole are gold pads. After the surface mount capacitors and surface mount resistors are welded and cleaned, when the conditioning chip and the power chip are stacked and bonded, insulating glue is used for bonding, and the curing condition of the insulating glue used is 150° C. and the curing time is 2 hours.

[0017] Furthermore, before bonding the multilayer ceramic substrate to the inside of the metal shell tube seat, the through holes on the multilayer ceramic substrate are aligned with the lead posts in the metal shell tube seat, the first through cavity on the multilayer ceramic substrate is aligned with the pressure core in the metal shell tube seat, and the second through cavity on the multilayer ceramic substrate is aligned with the thermal conductive substrate in the metal shell tube seat.

[0018] Furthermore, when the transistor is welded on the thermally conductive substrate, high-temperature solder paste is used for welding, and the thermally conductive substrate is selected as an AMB (Active Metal Brazing, active metal brazing ceramic substrate) substrate. The transistor is welded on the thermally conductive substrate using high-temperature solder paste, and the collector electrode of the back electrode of the transistor is led out through the conductive tape on the thermally conductive substrate. Then, the thermally conductive substrate is welded on the metal shell tube socket with low-temperature solder paste, and then cleaned.

[0019] Furthermore, when the multilayer ceramic substrate is bonded to the metal shell tube seat, a heat-insulating adhesive is used for bonding. When the pressure core is fixed to the metal shell tube seat, an insulating adhesive is used for bonding.

[0020] Furthermore, the pressure core, the conditioning chip, the power chip, the transistor, the thermal conductive substrate and the multilayer ceramic substrate are bonded to each other respectively by thermal ultrasonic bonding to form electrical connections, and the bonding wire used is a gold wire with a diameter of 25 μm.

[0021] Furthermore, using silicone oil with a small viscosity coefficient as a liquid sealing medium can ensure that the pressure loss of the piezoresistive sensitive chip caused by the external environment is as small as possible, and can also help reduce the impact of temperature changes on the core resistance value. It plays a role in transmitting pressure, protecting the internal structure, improving sensitivity and stability inside the sensor, and preventing external substances such as liquids and gases from entering the sensor, thereby avoiding the impact of these external substances on the electrical characteristics of the sensor.

[0022] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention discloses a two-wire pressure sensor, which integrates the pressure core and the conditioning circuit structure through innovative structural design. The two-wire pressure sensor of the present invention integrates components such as a multilayer ceramic substrate, a pressure core, a thermally conductive substrate, a conditioning chip, a power chip, a transistor, a surface-mount capacitor, and a surface-mount resistor in a metal shell tube socket, thereby realizing a high degree of integration of the sensor. This design not only reduces the volume of the sensor, but also improves its overall performance and reliability. Compared with traditional pressure sensors, the present invention has the characteristics of high integration, greatly reduces the overall volume, is conducive to the miniaturization and lightweight of the sensor control system in the equipment, realizes the electrical connection between the pressure core and the conditioning circuit through an automatic bonding process, greatly enhances the anti-interference ability of the sensor, and improves reliability and environmental adaptability.

[0023] The present invention discloses a two-wire pressure sensor integration method. The pressure core, power chip, conditioning chip, surface mount resistor, and surface mount capacitor are assembled on a multilayer ceramic substrate by a three-dimensional assembly process, and the transistor is assembled on a thermally conductive substrate, thereby realizing a highly integrated pressure sensor. During the integration process, the precise connection and positioning between the components are ensured, and bonding technology is used to realize the connection between the components, forming a stable and reliable electrical connection. This connection method has the characteristics of low resistance, high reliability, and long life. The pressure sensor integration method described in the present invention not only meets the miniaturization of the two-wire pressure sensor, but also avoids the manual wire welding operation, greatly shortens the transmission path of the pressure signal, improves the anti-interference ability, and improves the reliability in complex environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The figure is a schematic diagram of the overall structure of a two-wire pressure sensor in an embodiment of the present invention.

[0025] Figure 2The figure is a schematic diagram of assembling a multilayer ceramic substrate of a two-wire pressure sensor in an embodiment of the present invention.

[0026] Figure 3 The figure is a schematic diagram of the structure of a multilayer ceramic substrate of a two-wire pressure sensor in an embodiment of the present invention.

[0027] Figure 4 The figure is a schematic diagram of a metal housing tube socket of a two-wire pressure sensor in an embodiment of the present invention.

[0028] Figure 5 The figure is a schematic diagram of a two-wire pressure sensor package in an embodiment of the present invention.

[0029] Figure 6 The figure is a flow chart of a two-wire pressure sensor integration method in an embodiment of the present invention.

[0030] In the figure, 1 is a metal cover plate; 2 is a multilayer ceramic substrate; 3 is a metal shell socket; 4 is a surface-mount capacitor; 5 is a power chip; 6 is a surface-mount resistor; 7 is a conditioning chip; 8 is a thermal conductive substrate; 9 is a transistor; 10 is a pressure core; 11 is a bonding wire; 12 is a through hole; 13 is a first through cavity; 14 is a second through cavity; 15 is a lead column. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] Embodiment 1: like Figures 1 to 5 FIG. 2 is a two-wire pressure sensor according to an embodiment of the present invention. Figure 1 FIG. 1 is a schematic diagram of the overall structure of a two-wire pressure sensor in an embodiment of the present invention. The pressure sensor comprises a metal shell tube seat 3, and a metal cover plate 1 is covered on the metal shell tube seat 3. Figure 4 The figure shows a schematic diagram of the structure of the metal shell tube seat 3. A plurality of lead posts 15 are arranged in the metal shell tube seat 3. The number of lead posts 15 is preferably 5 and they are evenly distributed at the outer side of the metal shell tube seat 3. The bottom surface of the metal shell tube seat 3 is circular, and the distance between each lead post 15 and the center of the bottom surface of the metal shell tube seat 3 is equal. Preferably, in this embodiment, the metal cover plate 1 and the metal shell tube seat 3 are made of high-quality carbon structural steel 10# steel with an average carbon content of 0.07% to 0.13%.

[0034] The metal shell tube base 3 is provided with Figure 2 The multilayer ceramic substrate 2, the pressure core 10, and the heat-conducting substrate 8 shown in the figure, in this embodiment, the multilayer ceramic substrate 2 preferably uses an LTCC (Low Temperature Co-fired Ceramics) substrate with extremely high wiring density and fast signal transmission capability, and the thickness is less than 1mm; the heat-conducting substrate 8 preferably uses an AMB (Active Metal Brazing) substrate with high bonding strength, high reliability and excellent thermal conductivity. A transistor 9 is arranged on the heat-conducting substrate 8. In this embodiment, the transistor 9 preferably uses a 3DG182 model with a power PCM of 700 milliwatts, a current ICM of 300 milliamperes, a junction temperature Tjm of 175 degrees Celsius, and an operating temperature range Tatg[clammilk2] of -55 to 150 degrees Celsius. A conditioning chip 7 is fixed on the multilayer ceramic substrate 2. In this embodiment, a chip with a size less than or equal to 2.8mm×2.3mm and a thickness less than or equal to 0.38mm is preferably used as the conditioning chip 7. A power chip 5 is fixed on the conditioning chip 7, and a plurality of surface-mount capacitors 4 and a plurality of surface-mount resistors 6 are also fixed on the multilayer ceramic substrate 2. In this embodiment, three surface-mount capacitors 4 and seven surface-mount resistors 6 are preferably used.

[0035] Preferably, the multilayer ceramic substrate 2 in this embodiment has two through cavities, namely a first through cavity 13 and a second through cavity 14 ; the multilayer ceramic substrate 2 also has a plurality of through holes 12 , preferably five in number.

[0036] Preferably, in this embodiment, the pressure core 10 is located in the first through cavity 13, the thermal conductive substrate 8 is located in the second through cavity 14, the number and position of the through holes 12 correspond to the number and position of the lead posts 15, and the lead posts 15 are respectively located in the through holes 12.

[0037] Preferably, in this embodiment, the pressure core 10 , the power chip 5 , the conditioning chip 7 and the transistor 9 are all electrically connected to the multilayer ceramic substrate 2 via bonding wires 11 .

[0038] Preferably, in this embodiment, a lead is arranged in the lead column 15 on the metal shell tube seat 3, the lead is gold-plated, and the lead is electrically connected to the multilayer ceramic substrate 2 through gold wire bonding, and the power supply, control signal, communication signal and output current signal are led out through the lead.

[0039] Preferably, in this embodiment, the surface and the interior of the multilayer ceramic substrate 2 are wired. The pressure core 10 is bonded to the metal shell tube socket 3 with insulating glue, the thermal conductive substrate 8 is welded to the metal shell tube socket 3, and the transistor 9 is welded to the thermal conductive substrate 8, and the thermal conductive substrate 8 is used to dissipate heat for the transistor 9. The pressure core 10 is used to sense external pressure and output a weak voltage signal under the excitation of the conditioning chip 7. The conditioning chip 7 amplifies and compensates the weak voltage signal and outputs a voltage signal, which is converted into a current signal output through the transistor 9. The power chip 5 converts the external power supply voltage into a +5V voltage to power the conditioning chip 7.

[0040] The two-wire pressure sensor described in this embodiment realizes a high degree of integration of the sensor by integrating a multilayer ceramic substrate 2, a pressure core 10, a heat-conducting substrate 8, a conditioning chip 7, a power chip 5, a transistor 9, a surface-mounted capacitor 4 and a surface-mounted resistor 6 in a metal shell tube seat 3. At the same time, the problems of heat dissipation, connection stability and reliability, and signal quality are taken into consideration, and a heat-conducting substrate 8 is provided to dissipate heat from the transistor 9 to prevent the performance of the pressure sensor from being damaged due to overheating of the transistor 9; bonding technology is used to achieve electrical connection, and this connection method has the characteristics of low resistance, high reliability and long life, which improves the measurement accuracy and stability of the pressure sensor described in this embodiment. The high reliability, high precision and easy installation characteristics of the two-wire pressure sensor described in this embodiment make it suitable for a variety of occasions and fields.

[0041] Embodiment 2: like Figure 6 The figure is a flow chart of a two-wire pressure sensor integration method in an embodiment of the present invention. The integration method is used to integrate the two-wire pressure sensor described in Embodiment 1. The two-wire pressure sensor integration method includes the following steps: S1, soldering the surface mount capacitors and the surface mount resistors on the multilayer ceramic substrate, bonding the conditioning chip on the multilayer ceramic substrate, and bonding the power chip stack on the conditioning chip; soldering the transistors on the thermal conductive substrate, and then fixing the thermal conductive substrate and the pressure core on the corresponding positions of the metal shell tube socket respectively; S2, bonding and mounting the multilayer ceramic substrate in the metal housing socket; S3, connecting the pressure core, the conditioning chip, the power chip, the transistor, the thermal conductive substrate and the multilayer ceramic substrate; S4, filling the interior of the metal shell tube seat with liquid sealing medium; S5, sealing and welding the metal cover plate and the metal shell tube seat to form a sealed body.

[0042] Preferably, when the surface mount capacitors and the surface mount resistors are welded on the multilayer ceramic substrate, welding is performed using low-temperature solder paste, and the multilayer ceramic substrate is cleaned after welding. The multilayer ceramic substrate is an LTCC (Low Temperature Co-fired Ceramics) substrate. The multilayer ceramic substrate has a total of 8 layers of wiring, and the line width and line spacing are both set to 120μm.

[0043] Preferably, the pads on the multilayer ceramic substrate in this embodiment are platinum pads, and the pads at the bonding position of the conditioning chip and near the through hole are gold pads. When the surface mount capacitors and surface mount resistors are welded and cleaned, the conditioning chip and the power chip are stacked and bonded using insulating glue, and the curing condition of the insulating glue used is 150°C and the curing time is 2h.

[0044] Preferably, in this embodiment, before the multilayer ceramic substrate is bonded to the inside of the metal shell tube socket, the through holes on the multilayer ceramic substrate are aligned with the lead posts in the metal shell tube socket, the first through cavity on the multilayer ceramic substrate is aligned with the pressure core in the metal shell tube socket, and the second through cavity on the multilayer ceramic substrate is aligned with the thermal conductive substrate in the metal shell tube socket.

[0045] Preferably, in this embodiment, high temperature solder paste is used for soldering when the transistor is soldered on the thermally conductive substrate, and the thermally conductive substrate is selected as an AMB (Active Metal Brazing, active metal brazing ceramic substrate) substrate. The transistor is soldered on the thermally conductive substrate using high temperature solder paste, the collector electrode of the back electrode of the transistor is led out through the conductive tape on the thermally conductive substrate, and then the thermally conductive substrate is soldered on the metal shell tube socket using low temperature solder paste, and then cleaned.

[0046] Preferably, in this embodiment, the multilayer ceramic substrate is bonded to the metal shell tube seat using heat-insulating adhesive, and the pressure core is fixed to the metal shell tube seat using insulating adhesive.

[0047] Preferably, in this embodiment, thermal ultrasonic bonding is used to bond the pressure core, the conditioning chip, the power chip, the transistor, the thermal conductive substrate and the multilayer ceramic substrate to form electrical connections, and the bonding wire used is a gold wire with a diameter of 25 μm.

[0048] Preferably, in this embodiment, silicone oil with a small viscosity coefficient is used as the liquid sealing medium, which can ensure that the pressure loss of the piezoresistive sensitive chip by the external environment is as small as possible, and can also help reduce the impact of temperature changes on the core resistance value. It plays a role in transmitting pressure, protecting the internal structure, improving sensitivity and stability inside the sensor, and preventing external substances such as liquid and gas from entering the sensor, thereby avoiding the impact of these external substances on the electrical characteristics of the sensor.

[0049] The two-wire pressure sensor manufactured by the integration method described in this embodiment has the characteristics of high integration and realizes airtight packaging. Its overall size is less than or equal to Φ13.0mm×5.5mm, and its volume is reduced by more than 30% compared with the traditional two-wire pressure sensor. The two-wire pressure sensor using the process described in this embodiment realizes the electrical connection between the pressure core and the conditioning circuit through an automatic bonding process, which avoids manual operation and greatly enhances the anti-interference ability of the sensor, improves reliability and environmental adaptability, and can work in an environment of -55℃~125℃ for a long time.

Claims

1. A two-wire pressure sensor, characterized in that: The invention comprises a metal shell tube seat (3), wherein a metal cover plate (1) is covered on the top of the metal shell tube seat (3), a plurality of lead posts (15) are arranged in the metal shell tube seat (3), a multilayer ceramic substrate (2), a pressure core (10) and a heat-conducting substrate (8) are arranged in the metal shell tube seat (3), and a triode (9) is arranged on the heat-conducting substrate (8); a conditioning chip (7) is fixed on the multilayer ceramic substrate (2), a power chip (5) is fixed on the conditioning chip (7), and a plurality of surface-mounted capacitors (4) and a plurality of surface-mounted resistors (6) are also fixed on the multilayer ceramic substrate (2).

2. A two-wire pressure sensor according to claim 1, characterized in that: The multilayer ceramic substrate (2) is provided with a first through cavity (13), a second through cavity (14) and a plurality of through holes (12).

3. A two-wire pressure sensor according to claim 2, characterized in that: The pressure core (10) is located in the first through cavity (13), the heat-conducting substrate (8) is located in the second through cavity (14), the number and position of the through holes (12) correspond to the number and position of the lead posts (15), and the lead posts (15) are respectively located in the through holes (12).

4. A two-wire pressure sensor according to claim 2, characterized in that: The pressure core (10), the power chip (5), the conditioning chip (7) and the transistor (9) are all electrically connected to the multilayer ceramic substrate (2) via bonding wires (11).

5. A two-wire pressure sensor according to claim 1, characterized in that: A lead is arranged in the lead column (15) on the metal shell tube seat (3); the lead is gold-plated, and the lead is electrically connected to the multilayer ceramic substrate (2) through gold wire bonding.

6. A two-wire pressure sensor according to claim 1, characterized in that: The multilayer ceramic substrate (2) has wiring on its surface and inside.

7. A two-wire pressure sensor integration method, characterized in that: The integration method is used to integrate the two-wire pressure sensor according to any one of claims 1 to 6, and the two-wire pressure sensor integration method comprises the following steps: S1, soldering the surface mount capacitors and the surface mount resistors on the multilayer ceramic substrate, bonding the conditioning chip on the multilayer ceramic substrate, and bonding the power chip stack on the conditioning chip; soldering the transistors on the thermal conductive substrate, and then fixing the thermal conductive substrate and the pressure core on the corresponding positions of the metal shell tube socket respectively; S2, bonding and mounting the multilayer ceramic substrate in the metal housing socket; S3, connecting the pressure core, the conditioning chip, the power chip, the transistor, the thermal conductive substrate and the multilayer ceramic substrate; S4, filling the interior of the metal shell tube seat with liquid sealing medium; S5, sealing and welding the metal cover plate and the metal shell tube seat to form a sealed body.

8. A two-wire pressure sensor integration method according to claim 7, characterized in that: Before bonding the multilayer ceramic substrate to the inside of the metal shell tube seat, align the through holes on the multilayer ceramic substrate with the lead posts in the metal shell tube seat, align the first through cavity on the multilayer ceramic substrate with the pressure core in the metal shell tube seat, and align the second through cavity on the multilayer ceramic substrate with the heat conductive substrate in the metal shell tube seat.

9. A two-wire pressure sensor integration method according to claim 7, characterized in that: The pressure core, conditioning chip, power chip, transistor, thermal conductive substrate and multilayer ceramic substrate are bonded to form electrical connection.

10. A two-wire pressure sensor integration method according to claim 7, characterized in that: The pads on the multilayer ceramic substrate are platinum pads, and the pads at the bonding conditioning chip position and near the through hole are gold pads.

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