An Optimization Method and System for Heat Management in the Crystal Growth Process

Abstract

This application relates to the field of crystal processing technology, and particularly to a method and system for optimizing heat management during crystal growth. It includes: constructing multiple heating sub-regions and multiple monitoring points according to crystal processing equipment parameters; generating an expected crystal growth curve based on the parameters of the crystal to be processed, and constructing a heating-up period, a growth period, and a cooling-down period according to the expected crystal growth curve; sequentially setting control strategies for the heating-up period, the growth period, and the cooling-down period; constructing multiple heating sub-regions inside the crystal processing equipment, and during the crystal growth process, performing temperature control in sub-regions to ensure that the solid-liquid interface of the crystal is in a stable temperature field, ensuring the growth efficiency and quality of the crystal, and at the same time, performing targeted adjustment on the remaining heating sub-regions to reduce the overall heat loss. By setting control strategies for each period according to the expected crystal growth curve, the temperature control inside the crystal processing equipment is improved, and the overall heat loss is reduced.

Description

Technical Field

[0001] This application relates to the technical field of crystal processing, and particularly to an optimization method and system for heat management during crystal growth. Background Art

[0002] In crystal growth, temperature control is crucial and affects important quality indicators such as the transparency, integrity, and color of the crystal. Currently, crystal growth furnaces generally use electric heating furnaces and graphite resistance heaters for heating according to different processes.

[0003] During the crystal growth process, affected by factors such as the lengthening of the crystal size, the reduction of silicon material, and the rise of the crucible during the growth process, the temperature field distribution and heat transfer in the single crystal furnace are always in a state of continuous change. If the adjustment is not timely and the internal temperature field cannot be in a stable state, a large amount of heat will be wasted, and at the same time, the growth efficiency and quality of the crystal will be interfered with. Summary of the Invention

[0004] The purpose of this application is: To solve the above technical problems, this application provides an optimization method and system for heat management during crystal growth, aiming to improve the temperature control efficiency during crystal production and reduce heat loss.

[0005] In some embodiments of this application, multiple heating sub-regions are constructed inside the crystal processing equipment. During the crystal growth process, according to the real-time state of the crystal, temperature control is carried out in sub-regions to ensure that the solid-liquid interface of the crystal is in a stable temperature field, ensuring the growth efficiency and quality of the crystal. At the same time, targeted adjustment is carried out on the remaining heating sub-regions to reduce the overall heat loss.

[0006] In some embodiments of this application, according to the crystal processing parameters, a heating-up period, a growth period, and a cooling-down period are constructed. Control strategies within each period are respectively set according to the expected growth curve of the crystal. At the same time, by real-time monitoring of the internal temperature, the control strategy is dynamically corrected in a timely manner to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss.

[0007] In some embodiments of this application, an optimization method for heat management during crystal growth is provided, including:

[0008] Construct multiple heating sub-regions and multiple monitoring points according to the crystal processing equipment parameters;

[0009] Generate an expected growth curve of the crystal according to the crystal parameters to be processed, and construct a heating-up period, a growth period, and a cooling-down period according to the expected growth curve of the crystal;

[0010] Set the control strategies for the heating-up period, the growth period, and the cooling-down period in sequence;

[0011] Among them, when establishing multiple heating sub-regions and multiple monitoring points, it includes:

[0012] Set the heating sub-region sequence A, A = (a1, a2…ai…an), where ai is the i-th heating sub-region; n is the number of heating sub-regions;

[0013] Set the monitoring point sequence B, B = (b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m > n.

[0014] In some embodiments of the present application, when setting the control strategy of the heating cycle, it includes:

[0015] Set the heating rate and growth temperature according to the parameters of the crystal to be processed;

[0016] Set the primary control strategy within the heating cycle according to the heating rate and growth temperature;

[0017] Generate a primary expected temperature curve according to the heating rate, and set multiple primary feedback time nodes within the heating cycle according to the primary expected temperature curve;

[0018] Obtain the temperature data of each monitoring point at the current primary feedback time node;

[0019] Generate a primary temperature sequence T at the current primary feedback time node, T = (t1, t2…ti…tm); where ti is the primary temperature value of the i-th monitoring point at the current primary feedback time node;

[0020] Generate the heating fluctuation value k at the current primary feedback time node according to the primary temperature sequence T;

[0021] Preset the heating fluctuation value threshold K1;

[0022] If k > K1, generate a primary regulation instruction at the current primary feedback time node, and correct the primary control strategy according to the primary regulation instruction.

[0023] In some embodiments of the present application, when generating the heating fluctuation value k at the current primary feedback time node, it includes:

[0024] ;

[0025] Among them, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the primary temperature sequence T; is the expected temperature at the current primary feedback time node generated according to the primary expected temperature curve.

[0026] In some embodiments of the present application, when setting the control strategy for the growth cycle, it includes:

[0027] Set multiple time intervals within the growth cycle according to the expected crystal growth curve;

[0028] Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval within the growth cycle; r is the number of time intervals within the growth cycle;

[0029] Set the sub-control strategies for each time interval according to the expected crystal growth curve;

[0030] Set the secondary control strategy within the growth cycle according to all the sub-control strategies;

[0031] Set multiple monitoring time nodes within the growth cycle, and determine whether to correct the secondary control strategy according to the preset monitoring time nodes.

[0032] In some embodiments of the present application, when setting the sub-control strategies for each time interval, it includes:

[0033] Set hi as the target time interval in sequence according to the time interval sequence H;

[0034] Set the primary heating sub-region of the target time interval according to the expected crystal growth curve;

[0035] Obtain the primary associated sub-region of the primary heating sub-region according to the preset association model;

[0036] Set the expected temperature value d 1 ';

[0037] Set the expected temperature value d 2 ' of the primary associated sub-region of the primary heating sub-region;

[0038] Set the expected temperature value d 3 ' of the non-primary associated sub-region of the primary heating sub-region;

[0039] According to the expected temperature value d 1 ', the expected temperature value d 2 ' and the expected temperature value d 3 ' generate the sub-control strategy for the target time interval;

[0040] Generate the sub-control strategies for each time interval in sequence.

[0041] In some embodiments of the present application, when determining whether to correct the secondary control strategy according to the preset monitoring time nodes, it includes:

[0042] Obtain the temperature data and the actual crystal growth rate at each monitoring point at the current monitoring time node;

[0043] Determine the target primary heating sub-region of the current monitoring time according to the time interval where the current monitoring time node is located;

[0044] Establish the secondary temperature sequence D1 of the target primary heating sub-region, D1=(d 11 , d 12 …d 1i …d 1m1 ); where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-region at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-region;

[0045] Establish the secondary temperature sequence D2 of the primary associated sub-region of the target primary heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the primary associated sub-region of the target primary heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the primary associated sub-region of the target primary heating sub-region;

[0046] Establish the secondary temperature sequence D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-primary associated sub-region of the target primary heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-primary associated sub-region of the target primary heating sub-region;

[0047] Among them, m1 + m2 + m3 = m;

[0048] Generate the corrected evaluation value p of the current monitoring time node according to the secondary temperature values of each monitoring point;

[0049] Preset the first corrected evaluation value threshold P1;

[0050] If p > P1, generate a primary correction instruction at the current monitoring time node, and correct the secondary control strategy within the growth cycle according to the primary correction instruction.

[0051] In some embodiments of the present application, when generating the corrected evaluation value p of the current monitoring time node, it includes:

[0052] J1 = (d 1i - d 1 )2 ;

[0053] J2 = (d 2i -d 2 ) 2 ;

[0054] J3 = (d 3i -d 3 ) 2 ;

[0055] p = β * [e3 * Q3 * J1 + e4 * Q4 * J2 + e5 * Q5 * J3];

[0056] Among them, e3 is a preset third weight coefficient; e4 is a preset fourth weight coefficient; e5 is a preset fifth weight coefficient; Q3 is a preset third fixed coefficient; Q4 is a preset fourth fixed coefficient; Q5 is a preset fifth fixed coefficient; J1 is a first reference value; J2 is a second reference value; J3 is a third reference value; β is a compensation coefficient set based on the difference between the actual crystal growth rate and the expected crystal growth rate at the current monitoring time node.

[0057] In some embodiments of the present application, when setting the control strategy for the cooling cycle, it includes:

[0058] Set the cooling rate according to the crystal parameters to be processed;

[0059] Set the three - level control strategy within the cooling cycle according to the cooling rate;

[0060] Generate a three - level expected temperature curve according to the cooling rate, and set multiple secondary feedback time nodes according to the three - level expected temperature curve;

[0061] Obtain the temperature data of each monitoring point according to the preset secondary feedback time node, and determine whether to generate a secondary regulation instruction.

[0062] In some embodiments of the present application, a heat management optimization system for the crystal growth process is provided, including:

[0063] A central control unit for constructing multiple heating sub - regions and multiple monitoring points according to the crystal processing equipment parameters;

[0064] A monitoring unit includes multiple monitoring sub - modules, the monitoring sub - modules are arranged at the monitoring points, and the monitoring sub - modules are used to collect the temperature data of the monitoring points;

[0065] A heating unit includes multiple heating sub - modules, and a single heating sub - module is used to control the real - time temperature within a single heating sub - region;

[0066] The central control unit includes:

[0067] The first processing module is used to generate an expected crystal growth curve according to the crystal parameters to be processed, and construct a heating-up period, a growth period, and a cooling-down period according to the expected crystal growth curve;

[0068] The second processing module is used to set the control strategies of the heating unit during the heating-up period, the growth period, and the cooling-down period;

[0069] The third processing module is used to set a sequence of heating sub-regions A, A = (a1, a2…ai…an), where ai is the i-th heating sub-region; n is the number of heating sub-regions;

[0070] The third processing module is further used to set a sequence of monitoring points B, B = (b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m > n.

[0071] Compared with the prior art, the beneficial effects of a heat management optimization method and system during the crystal growth process in the embodiments of the present application are as follows:

[0072] Construct multiple heating sub-regions inside the crystal processing equipment. During the crystal growth process, according to the real-time state of the crystal, perform temperature control in sub-regions to ensure that the solid-liquid interface of the crystal is in a stable temperature field, ensure the growth efficiency and quality of the crystal, and at the same time perform targeted adjustment on the remaining heating sub-regions to reduce the overall heat loss.

[0073] According to the crystal parameters to be processed, construct a heating-up period, a growth period, and a cooling-down period, set the control strategies within each period according to the expected crystal growth curve, and at the same time, through real-time monitoring of the internal temperature, dynamically correct the control strategies in a timely manner to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss. Description of the Drawings

[0074] Figure 1 It is a schematic flowchart of a heat management optimization method and system during the crystal growth process in the embodiments of the present application. Detailed Embodiments

[0075] The following combines the drawings and embodiments to further describe in detail the specific embodiments of the present application. The following embodiments are used to illustrate the present application, but are not used to limit the scope of the present application.

[0076] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0077] The terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0078] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection", and "coupling" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0079] As Figure 1 shown, a method for optimizing heat management in the crystal growth process of an embodiment of the present application includes:

[0080] S101: Construct a plurality of heating sub-regions and a plurality of monitoring points according to the crystal processing equipment parameters;

[0081] S102: Generate an expected crystal growth curve according to the crystal parameters to be processed, and construct a heating-up period, a growth period, and a cooling-down period according to the expected crystal growth curve;

[0082] S103: Set the control strategies for the heating-up period, the growth period, and the cooling-down period in sequence;

[0083] Among them, when constructing a plurality of heating sub-regions and a plurality of monitoring points, it includes:

[0084] Set a sequence of heating sub-regions A, A = (a1, a2... ai... an), where ai is the i-th heating sub-region; n is the number of heating sub-regions;

[0085] Set a sequence of monitoring points B, B = (b1, b2... bi... bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m > n.

[0086] Specifically, according to the internal structure parameters of the crystal processing equipment, its internal space is divided to construct multiple heating sub-regions, and multiple monitoring points are arranged. Temperature monitoring devices such as thermocouples and infrared thermometers are set at the monitoring points to collect the real-time temperature of each monitoring point, so as to monitor the temperature field inside the crystal processing equipment in real time.

[0087] Specifically, through the modular design of the heating unit, the temperature in each processing sub-region can be targeted regulated, and the accurate regulation of the temperature is achieved by adjusting the load current of each heating sub-module.

[0088] Specifically, multiple monitoring points correspond to each heating sub-region. By collecting the temperature data of the monitoring points in the heating sub-region, the temperature field in a single heating sub-region can be constructed.

[0089] Specifically, according to the parameters of the crystal to be processed, the corresponding heating duration, growth duration and cooling duration are set, so as to construct a heating cycle, a growth cycle and a cooling cycle. The crystal to be processed is heated and melted during the heating cycle, cooled and crystallized during the growth cycle, and the temperature inside the crystal processing equipment drops to room temperature during the cooling cycle.

[0090] In the embodiment of the present application, when setting the control strategy of the heating cycle, it includes:

[0091] Set the heating rate and growth temperature according to the parameters of the crystal to be processed;

[0092] Set the primary control strategy during the heating cycle according to the heating rate and growth temperature;

[0093] Generate a primary expected temperature curve according to the heating rate, and set multiple primary feedback time nodes during the heating cycle according to the primary expected temperature curve;

[0094] Obtain the temperature data of each monitoring point at the current primary feedback time node;

[0095] Generate a primary temperature sequence T at the current primary feedback time node, T=(t1,t2…ti…tm); where ti is the primary temperature value of the i-th monitoring point at the current primary feedback time node;

[0096] Generate the heating fluctuation value k at the current primary feedback time node according to the primary temperature sequence T;

[0097] Preset the heating fluctuation value threshold K1;

[0098] If k>K1, a primary regulation instruction is generated at the current primary feedback time node, and the primary control strategy is corrected according to the primary regulation instruction.

[0099] Specifically, when generating the heating fluctuation value k of the current first-level feedback time node, it includes:

[0100] ;

[0101] wherein, e1 is a preset first weight coefficient; e2 is a preset second weight coefficient; Q1 is a preset first fixed coefficient; Q2 is a preset second fixed coefficient; is the average value of all data in the first-level temperature sequence T; is the expected temperature of the current first-level feedback time node generated according to the first-level expected temperature curve.

[0102] Specifically, through the preset first fixed coefficient and second fixed coefficient, each parameter in the model is normalized, so that each parameter is in the same value range.

[0103] Specifically, according to the crystal parameters to be processed, the optimal heating rate and growth temperature are set, so as to set the corresponding first-level control strategy, and the temperature inside the crystal processing equipment is raised to the growth temperature within the heating cycle. The growth temperature refers to the optimal temperature required to melt the crystal.

[0104] Specifically, by periodically collecting the temperature data of each monitoring point, it is judged whether the temperature inside the crystal processing equipment is in a stable state. The larger the heating fluctuation value, the more unstable the current heating process. When the heating fluctuation value exceeds the threshold, the first-level control strategy is corrected according to the first-level regulation instruction, and the working parameters of the corresponding heating unit are adjusted to ensure the stability of the temperature field inside the crystal processing equipment and improve the crystal production and processing efficiency.

[0105] It can be understood that in the above embodiments, according to the crystal parameters to be processed, a heating cycle, a growth cycle and a cooling cycle are constructed, the control strategies within each cycle are set respectively according to the expected growth curve of the crystal, and at the same time, by real-time monitoring the internal temperature, the control strategy is dynamically corrected in time to improve the temperature control of the inside of the crystal processing equipment and reduce the overall heat loss.

[0106] In the embodiments of the present application, when setting the control strategy of the growth cycle, it includes:

[0107] Set multiple time intervals within the growth cycle according to the crystal expected growth curve;

[0108] Establish a time interval sequence H, H = (h1, h2... hi... hr), wherein, hi is the i-th time interval within the growth cycle; r is the number of time intervals within the growth cycle;

[0109] Set the sub-control strategies for each time interval according to the crystal expected growth curve;

[0110] Set the secondary control strategy during the growth cycle according to all sub-control strategies;

[0111] Set multiple monitoring time nodes during the growth cycle, and determine whether to correct the secondary control strategy according to the preset monitoring time nodes.

[0112] Specifically, according to the expected crystal growth curve, divide the whole process of crystal growth, construct multiple time intervals according to factors such as the increase in crystal size, the reduction of silicon material, and the rise of the crucible during the growth process, and adjust the temperature field inside the crystal processing equipment according to the actual parameters in different time intervals, so as to ensure the growth quality and growth efficiency of the crystal.

[0113] Specifically, when setting the sub-control strategies for each time interval, it includes:

[0114] Set hi as the target time interval in sequence according to the time interval sequence H;

[0115] Set the primary heating sub-region of the target time interval according to the expected crystal growth curve;

[0116] Obtain the primary associated sub-region of the primary heating sub-region according to the preset association model;

[0117] Set the expected temperature value d of the primary heating sub-region 1 ';

[0118] Set the expected temperature value d of the primary associated sub-region of the primary heating sub-region 2 ';

[0119] Set the expected temperature value d of the non-primary associated sub-region of the primary heating sub-region 3 ';

[0120] According to the expected temperature value d 1 ', the expected temperature value d 2 ', and the expected temperature value d 3 ' to generate the sub-control strategy of the target time interval;

[0121] Generate the sub-control strategies of each time interval in sequence.

[0122] Specifically, its primary heating sub-region refers to the heating sub-region where the solid-liquid interface is located in the current time interval, and set the expected temperature value d according to the best crystallization temperature 1 ', the primary associated sub-region refers to each primary heating sub-region adjacent to the primary heating sub-region, and the temperature in its region can have a small fluctuation. Set the corresponding primary safety temperature difference according to historical data, so as to generate the expected temperature value d 2'; The remaining area is a non-primary associated sub-region, and the corresponding secondary safety temperature difference is set according to historical data, so as to generate the expected temperature value d 3 '; Its primary safety temperature difference is less than the secondary safety temperature difference. By adjusting the gradient of the internal temperature field, heat loss is reduced while ensuring overall stability and crystal growth efficiency.

[0123] Specifically, when judging whether to correct the secondary control strategy according to the preset monitoring time node, it includes:

[0124] Obtain the temperature data and the actual crystal growth rate of each monitoring point at the current monitoring time node;

[0125] Determine the target primary heating sub-region of the current monitoring time according to the time interval where the current monitoring time node is located;

[0126] Establish the secondary temperature sequence D1 of the target primary heating sub-region, D1=(d 11 , d 12 …d 1i …d 1m1 ); where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-region at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-region;

[0127] Establish the secondary temperature sequence D2 of the primary associated sub-region of the target primary heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the primary associated sub-region of the target primary heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the primary associated sub-region of the target primary heating sub-region;

[0128] Establish the secondary temperature sequence D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-primary associated sub-region of the target primary heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-primary associated sub-region of the target primary heating sub-region;

[0129] Among them, m1 + m2 + m3 = m;

[0130] Generate the correction evaluation value p of the current monitoring time node according to the secondary temperature values of each monitoring point;

[0131] Preset a first corrected evaluation value threshold P1;

[0132] If p > P1, a first-level correction instruction is generated at the current monitoring time node, and the secondary control strategy within the growth cycle is corrected according to the first-level correction instruction.

[0133] Specifically, when generating the corrected evaluation value p at the current monitoring time node, it includes:

[0134] J1 = (d 1i -d 1 ') 2 ;

[0135] J2 = (d 2i -d 2 ') 2 ;

[0136] J3 = (d 3i -d 3 ') 2 ;

[0137] p = β * [e3 * Q3 * J1 + e4 * Q4 * J2 + e5 * Q5 * J3];

[0138] Wherein, e3 is a preset third weight coefficient; e4 is a preset fourth weight coefficient; e5 is a preset fifth weight coefficient; Q3 is a preset third fixed coefficient; Q4 is a preset fourth fixed coefficient; Q5 is a preset fifth fixed coefficient; J1 is a first reference value; J2 is a second reference value; J3 is a third reference value; β is a compensation coefficient set based on the difference between the actual crystal growth rate and the expected crystal growth rate at the current monitoring time node.

[0139] Specifically, in the above embodiment, each parameter in the model is normalized by presetting the third fixed coefficient, the fourth fixed coefficient, and the fifth fixed coefficient, so that each parameter is within the same value range.

[0140] Specifically, the larger the corrected evaluation value p is, the more unstable the internal temperature field of the current crystal processing equipment is, and timely adjustment is required to avoid problems in crystal growth.

[0141] It can be understood that in the above embodiment, multiple heating sub-regions are constructed inside the crystal processing equipment. During the crystal growth process, according to the real-time state of the crystal, temperature control is performed in a sub-region manner to ensure that the solid-liquid interface of the crystal is in a stable temperature field, ensure the growth efficiency and quality of the crystal, and at the same time perform targeted adjustment on the remaining heating sub-regions to reduce the overall heat loss.

[0142] In the embodiments of the present application, when setting the control strategy for the cooling cycle, it includes:

[0143] Set the cooling rate according to the parameters of the crystal to be processed;

[0144] Set the three-level control strategy within the cooling cycle according to the cooling rate;

[0145] Generate a three-level expected temperature curve according to the cooling rate, and set multiple secondary feedback time nodes according to the three-level expected temperature curve;

[0146] Obtain the temperature data of each monitoring point according to the preset secondary feedback time node, and determine whether to generate a secondary regulation instruction.

[0147] Specifically, generate a three-level control strategy according to the cooling rate, and cool the temperature inside the crystal processing equipment to room temperature within the cooling cycle to complete the production of the crystal.

[0148] Based on another embodiment of the heat management optimization method for crystal growth process in any of the above embodiments, in this embodiment, a heat management optimization system for crystal growth process is provided, including:

[0149] A central control unit for constructing multiple heating sub-regions and multiple monitoring points according to the parameters of the crystal processing equipment;

[0150] A monitoring unit includes multiple monitoring sub-modules, the monitoring sub-modules are arranged at the monitoring points, and the monitoring sub-modules are used to collect the temperature data of the monitoring points;

[0151] A heating unit includes multiple heating sub-modules, and a single heating sub-module is used to control the real-time temperature within a single heating sub-region;

[0152] Specifically, the monitoring unit is preferably temperature monitoring devices such as thermocouples and infrared thermometers, and the heating sub-module is preferably a DC electronic load temperature control device. Each heating sub-module can be controlled separately, and the temperature control of the inside of the crystal processing equipment is completed through all the heating sub-modules.

[0153] The central control unit includes:

[0154] A first processing module for generating an expected crystal growth curve according to the parameters of the crystal to be processed, and constructing a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve;

[0155] A second processing module for setting the control strategy of the heating unit within the heating cycle, the growth cycle and the cooling cycle;

[0156] A third processing module for setting the heating sub-region sequence A, A = (a1, a2…ai…an), where ai is the i-th heating sub-region; n is the number of heating sub-regions;

[0157] The third processing module is further configured to set a sequence of monitoring points B, B = (b1, b2... bi... bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m > n.

[0158] According to the first concept of the present application, a plurality of heating sub-regions are constructed inside the crystal processing equipment. During the crystal growth process, according to the real-time state of the crystal, temperature control is carried out in a sub-region manner to ensure that the solid-liquid interface of the crystal is in a stable temperature field, ensure the growth efficiency and quality of the crystal, and at the same time, targeted adjustment is performed on the remaining heating sub-regions to reduce the overall heat loss.

[0159] According to the second concept of the present application, a heating-up period, a growth period, and a cooling-down period are constructed according to the crystal processing parameters. The control strategies within each period are respectively set according to the expected growth curve of the crystal. At the same time, by monitoring the internal temperature in real time, the control strategies are dynamically corrected in a timely manner to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss.

[0160] The above are only the preferred embodiments of the present application. It should be noted that for those of ordinary skill in the art in the technical field, without departing from the technical principle of the present application, several improvements and substitutions can be made, and these improvements and substitutions should also be regarded as the protection scope of the present application.

Claims

1. A method for optimizing thermal management during crystal growth, characterized in that: include: Constructing multiple heating sub-areas and multiple monitoring points according to crystal processing equipment parameters; Generate an expected crystal growth curve according to the parameters of the crystal to be processed, and construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; Set the control strategies of heating cycle, growth cycle and cooling cycle in sequence; Among them, when establishing multiple heating sub-areas and multiple monitoring points, it includes: Set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; Set the monitoring point sequence B, B=(b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n; When setting the control strategy for the heating cycle, include: Set the heating rate and growth temperature according to the parameters of the crystal to be processed; The primary control strategy within the heating cycle is set according to the heating rate and the growth temperature; Generate a first-level expected temperature curve according to the heating rate, and set multiple first-level feedback time nodes within the heating cycle according to the first-level expected temperature curve; Obtain the temperature data of each monitoring point at the current first-level feedback time node; Generate the first-level temperature sequence T of the current first-level feedback time node, T=(t1, t2…ti…tm); where ti is the first-level temperature value of the i-th monitoring point at the current first-level feedback time node; Generate the temperature fluctuation value k of the current first-level feedback time node according to the first-level temperature series T; Preset temperature fluctuation value threshold K1; If k>K1, the current first-level feedback time node generates a first-level control instruction, and the first-level control strategy is corrected according to the first-level control instruction; When generating the temperature rise fluctuation value k of the current first-level feedback time node, it includes: ； Wherein, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the first-level temperature series T; is the expected temperature at the current first-level feedback time node generated according to the first-level expected temperature curve; When setting a control strategy for the growth cycle, include: Set multiple time intervals within the growth cycle according to the expected growth curve of the crystal; Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval in the growth cycle; r is the number of time intervals in the growth cycle; Set sub-control strategies for each time interval according to the expected crystal growth curve; Set secondary control strategies within the growth cycle based on all sub-control strategies; Set multiple monitoring time nodes during the growth cycle, and determine whether to modify the secondary control strategy based on the preset monitoring time nodes; When setting the sub-control strategy for each time interval, include: According to the time interval sequence H, hi is set as the target time interval in sequence; The primary heating sub-region of the target time interval is set according to the expected growth curve of the crystal; Obtaining a first-level associated sub-region of a first-level heating sub-region according to a preset associated model; Set the expected temperature value d1' of the first-level heating sub-area; Set the expected temperature value d2' of the first-level associated sub-region of the first-level heating sub-region; Set the expected temperature value d3' of the non-first-level associated sub-region of the first-level heating sub-region; Generate a sub-control strategy for a target time interval according to the expected temperature value d1', the expected temperature value d2' and the expected temperature value d3'; Generate sub-control strategies for each time interval in turn.

2. The method for optimizing thermal management during crystal growth according to claim 1, characterized in that: When judging whether to modify the secondary control strategy according to the preset monitoring time node, it includes: Obtain the temperature data of each monitoring point at the current monitoring time node and the actual crystal growth rate; Determine the target primary heating sub-area of ​​the current monitoring time according to the time interval of the current monitoring time node; Establish the secondary temperature series D1 of the target primary heating sub-area, D1=(d 11 , d 12 …d 1i …d 1m1 ), where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-area at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-area; Establish the secondary temperature series D2 of the first-level associated sub-region of the target first-level heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the first-level associated sub-region of the target first-level heating sub-region; Establish the secondary temperature series D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-first-level associated sub-region of the target first-level heating sub-region; Among them, m1+m2+m3=m; Generate a corrected evaluation value p of the current monitoring time node according to the secondary temperature value of each monitoring point; Preset the first modified evaluation value threshold P1; If p>P1, the current monitoring time node generates a first-level correction instruction, and the second-level control strategy within the growth cycle is corrected according to the first-level correction instruction.

3. The method for optimizing thermal management during crystal growth according to claim 2, characterized in that: The generating of the corrected evaluation value p of the current monitoring time node includes: J1= (d 1i -d1') 2 ; J2= (d 2i -d2') 2 ; J3= (d 3i -d3') 2 4 p=β*[e3*Q3*J1+e4*Q4*J2+e5*Q5*J3]; Among them, e3 is the preset third weight coefficient; e4 is the preset fourth weight coefficient; e5 is the preset fifth weight coefficient; Q3 is the preset third fixed coefficient; Q4 is the preset fourth fixed coefficient; Q5 is the preset fifth fixed coefficient; J1 is the first reference value; J2 is the second reference value; J3 is the third reference value; β is the compensation coefficient set based on the difference between the actual growth rate of the crystal at the current monitoring time node and the expected growth rate of the crystal.

4. The method for optimizing thermal management during crystal growth according to claim 3, characterized in that: When setting the control strategy for the cooling cycle, include: Set the cooling rate according to the parameters of the crystal to be processed; Set the three-level control strategy within the cooling cycle according to the cooling rate; Generate a three-level expected temperature curve according to the cooling rate, and set multiple second-level feedback time nodes according to the three-level expected temperature curve; The temperature data of each monitoring point is obtained according to the preset secondary feedback time node, and it is determined whether to generate a secondary control instruction.

5. A crystal growth process heat management optimization system, using the crystal growth process heat management optimization method according to any one of claims 1 to 4, characterized in that: include: A central control unit, used to construct multiple heating sub-areas and multiple monitoring points according to the parameters of the crystal processing equipment; A monitoring unit, comprising a plurality of monitoring submodules, wherein the monitoring submodules are arranged at monitoring points and are used to collect temperature data of the monitoring points; A heating unit, comprising a plurality of heating submodules, wherein a single heating submodule is used to control the real-time temperature in a single heating subregion; The central control unit comprises: A first processing module is used to generate an expected crystal growth curve according to the parameters of the crystal to be processed, and to construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; The second processing module is used to set the control strategy of the heating unit in the heating cycle, the growth cycle and the cooling cycle; The third processing module is used to set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; The third processing module is further used to set a monitoring point sequence B, B=(b1, b2...bi...bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n; When setting the control strategy for the heating cycle, include: Set the heating rate and growth temperature according to the parameters of the crystal to be processed; The primary control strategy within the heating cycle is set according to the heating rate and the growth temperature; Generate a first-level expected temperature curve according to the heating rate, and set multiple first-level feedback time nodes within the heating cycle according to the first-level expected temperature curve; Obtain the temperature data of each monitoring point at the current first-level feedback time node; Generate the first-level temperature sequence T of the current first-level feedback time node, T=(t1, t2…ti…tm); where ti is the first-level temperature value of the i-th monitoring point at the current first-level feedback time node; Generate the temperature fluctuation value k of the current first-level feedback time node according to the first-level temperature series T; Preset temperature fluctuation value threshold K1; If k>K1, the current first-level feedback time node generates a first-level control instruction, and the first-level control strategy is corrected according to the first-level control instruction; When generating the temperature rise fluctuation value k of the current first-level feedback time node, it includes: ； Wherein, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the first-level temperature series T; is the expected temperature at the current first-level feedback time node generated according to the first-level expected temperature curve; When setting a control strategy for the growth cycle, include: Set multiple time intervals within the growth cycle according to the expected growth curve of the crystal; Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval in the growth cycle; r is the number of time intervals in the growth cycle; Set sub-control strategies for each time interval according to the expected crystal growth curve; Set secondary control strategies within the growth cycle based on all sub-control strategies; Set multiple monitoring time nodes during the growth cycle, and determine whether to modify the secondary control strategy based on the preset monitoring time nodes; When setting the sub-control strategy for each time interval, include: According to the time interval sequence H, hi is set as the target time interval in sequence; The primary heating sub-region of the target time interval is set according to the expected growth curve of the crystal; Obtaining a first-level associated sub-region of a first-level heating sub-region according to a preset associated model; Set the expected temperature value d1' of the first-level heating sub-area; Set the expected temperature value d2' of the first-level associated sub-region of the first-level heating sub-region; Set the expected temperature value d3' of the non-first-level associated sub-region of the first-level heating sub-region; Generate a sub-control strategy for a target time interval according to the expected temperature value d1', the expected temperature value d2' and the expected temperature value d3'; Generate sub-control strategies for each time interval in turn.

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