Semiconductor process chambers and semiconductor process equipment

Abstract

The present application provides a semiconductor process chamber and semiconductor process equipment, the semiconductor process chamber includes a chamber and a gas injector; the chamber wall forms an inner cavity, the chamber wall is provided with a first channel, the first channel has a first opening, the first channel is connected to the inner cavity through the first opening, the surface of the first channel includes a first surface, the first surface faces the first opening; the gas injector includes a connecting part, the connecting part is connected to the chamber and is located in the first channel; the gas injector has a gas flow channel, the gas flow channel passes through the surface of the connecting part and forms a gas outlet, the gas flow channel is connected to the first channel through the gas outlet, and the gas outlet is opposite to the first surface and has a spacing. The semiconductor process equipment includes a gas source and the semiconductor process chamber, and the gas source is connected to one end of the gas injector away from the chamber. The present application can fully premix the process gas by setting a premixing channel on the chamber wall, thereby improving the material processing accuracy.

Description

Technical Field

[0001] The present application relates to the field of process manufacturing technology, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] Some semiconductor process equipment includes a semiconductor process chamber, which is used to process wafers. During the process, process gases need to be introduced into the semiconductor process chamber. In order to ensure the wafer processing accuracy, the process gases need to be pre-mixed before entering the semiconductor process chamber. However, conventional semiconductor process chambers cannot fully pre-mix the process gases, resulting in low wafer processing accuracy. Summary of the invention

[0003] The embodiments of the present application provide a semiconductor process chamber and a semiconductor process equipment. By setting a premixing channel on the chamber wall, the process gas can be fully premixed, thereby improving the wafer processing accuracy.

[0004] In the first aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber and a gas injector; the chamber wall of the chamber forms an inner cavity, the chamber wall is provided with a first channel, the first channel has a first opening, the first channel is connected to the inner cavity through the first opening, the surface of the first channel includes a first surface, the first surface faces the first opening; the gas injector includes a connecting part, the connecting part is connected to the chamber and is located in the first channel; the gas injector has a gas flow channel, the gas flow channel passes through the surface of the connecting part and forms a gas outlet, the gas flow channel is connected to the first channel through the gas outlet, and the gas outlet is opposite to the first surface and has a distance.

[0005] In this solution, by forming a first channel on the wall of the chamber, through the special structure of the first channel and the assembly design of the first channel and the gas injector, the first channel can be used as a premixed gas channel, which can fully and evenly mix the process gas before entering the chamber, which is beneficial to improving the wafer processing accuracy and ensuring the process quality. In addition, since the process gas is guided and diverted by the surface of the first channel to achieve mixing, the mixing is a barrier-free mixing, which can ensure the pressure of the process gas, so that the process gas flows in place, can reduce vortices, ensure the stability of the flow field, and have lower requirements for the sealing of the chamber.

[0006] In an implementation of the first aspect, the surface of the first channel includes a second surface, the second surface includes a first edge and a second edge, the first edge is opposite to the second edge, the first edge serves as a part of the first opening, and the second edge is a common edge of the second surface and the first surface; the second surface extends obliquely toward the outside of the chamber along the direction from the first edge to the second edge.

[0007] In this solution, by adding a second surface between the first surface and the upper cover of the semiconductor process chamber, the first surface and the upper cover can maintain an appropriate axial distance, which can avoid the defect that a large amount of process gas may impact the upper cover and increase the probability of gas leakage due to the first surface being too close to the upper cover. In addition, through the guiding and diversion effect of the second surface, more process gas can flow roughly radially to the wafer surface, ensuring the flow rate of process gas participating in the process reaction and ensuring the effective utilization rate of process gas.

[0008] In an implementation of the first aspect, the first channel is in a strip shape, and first trumpet structures are formed at opposite ends of the first channel in a length direction, and an expansion end of the first trumpet structure faces the inner cavity. By making the first channel expand, the process gas can fully enter the first channel, so that the gas flow in the first channel is large.

[0009] In an implementation of the first aspect, the first surface is a curved surface, and the first opening and the air outlet are both located on the concave side of the curved surface. The curved surface design is conducive to ensuring the stability of the flow field, avoiding vortexes, and reducing pressure loss.

[0010] In an implementation of the first aspect, the first channel has a second opening, the first channel is connected to the external space of the chamber through the second opening, and the first channel is expanding along the direction from the second opening to the first opening; the connecting portion is connected to the second opening. By making the first channel expand, the process gas can fully enter the first channel, so that the gas flow in the first channel is large.

[0011] In an implementation of the first aspect, the cavity wall includes a first wall and a second wall, the first wall is connected to the second wall, a portion of the first wall is located on a side of the second wall facing away from the inner cavity, and the first wall and the second wall participate in forming the first channel. This solution can construct a premixed airflow channel that meets the requirements through a reasonable cavity wall structure, and makes the structure of the chamber simple, reliable, and easy to mass produce.

[0012] In one implementation of the first aspect, the semiconductor process chamber includes a plurality of the gas injectors, each of which is detachably connected to the chamber. By providing a plurality of independent and detachable gas injectors, this solution can independently supply gas to each gas injector, can flexibly and finely adjust process parameters, and expand the control range of process parameters to meet process needs. In addition, risk zoning control can also be achieved. When a problem occurs, only the faulty gas injector needs to be replaced, and other gas injectors can continue to be used, so that the process can proceed as usual.

[0013] In an implementation of the first aspect, the material of at least one of the gas injectors is different from the material of the other gas injectors. This solution can realize the introduction of multiple process gases into the first channel. By setting up multiple gas injectors independently, it is convenient to select materials for each gas injector separately, so that multiple gas injectors can be manufactured using multiple materials, avoiding the defect that a single gas injector in the conventional solution needs to adapt to the characteristics of multiple process gases at the same time, which is conducive to broadening the range of material selection. In this solution, since the range of material selection for gas injectors is large, the heat exchange process can be adjusted by selecting different materials to meet product needs.

[0014] In an implementation of the first aspect, the gas injector further comprises a plurality of gas inlet pipes, each of which is connected to the connecting portion; the connecting portion is provided with a plurality of gas holes, one of which is connected to one of the gas inlet pipes to form a gas flow channel, and each of the gas holes penetrates the surface of the connecting portion to form the gas outlet. The gas injector of this solution can integrate a plurality of gas inlet pipes together, so that a single injector can input a plurality of process gases.

[0015] In an implementation of the first aspect, the material of at least one of the air inlet pipes is different from the materials of the other air inlet pipes. In this solution, the material of at least one of the air inlet pipes of the gas injector can be different from the materials of the other air inlet pipes, so as to allow a variety of process gases to be introduced into the gas injector, which is conducive to expanding the material selection range of the gas injector.

[0016] In an implementation of the first aspect, the connecting portion has a first matching groove, and the cavity wall is inserted into the first matching groove. In this solution, the cavity wall can form a "mosaic fit" with the first matching groove, and this "mosaic fit" is conducive to improving air tightness, reducing the risk of air leakage, and reducing the probability of external impurities entering the chamber and causing contamination.

[0017] In an implementation of the first aspect, the chamber wall is further provided with a second channel, the second channel being connected to the inner chamber; the semiconductor process chamber further comprises a feeding pipe, a portion of the feeding pipe being inserted into the second channel. By designing the second channel and the feeding pipe, the wafer can be fed into the chamber.

[0018] In an implementation of the first aspect, the feed tube has a boss, the boss extends into the first channel, and the top surface of the boss is connected to the connecting portion. By making the boss on the feed tube contact the connecting portion of the gas injector, the feed tube can be used to assemble, position and support the gas injector, without the need to design an additional positioning support structure, thereby saving structural space.

[0019] In an implementation of the first aspect, the feeding tube has a second matching groove, and the cavity wall is inserted into the second matching groove. In this solution, the cavity wall can form a "mosaic fit" with the second matching groove, and this "mosaic fit" is conducive to improving air tightness, reducing the risk of air leakage, and preventing external impurities from entering the chamber and causing contamination.

[0020] In an implementation of the first aspect, the chamber wall is further provided with a third channel, the third channel is connected to the inner chamber, and the third channel and the first channel are respectively located on opposite sides of the chamber wall; the semiconductor process chamber further includes an exhaust pipe, the exhaust pipe is connected to the chamber wall and is connected to the third channel. By designing the third channel and the exhaust pipe, the exhaust of process waste gas can be achieved.

[0021] In an implementation of the first aspect, one end of the third channel connected to the inner cavity forms a second trumpet structure, and the expansion end of the second trumpet structure faces the inner cavity. By making the third channel have an expansion structure, it is convenient to fully discharge the process exhaust gas from the chamber, and it can also prevent the process exhaust gas from flowing back.

[0022] In an implementation of the first aspect, the semiconductor process chamber includes a plurality of exhaust pipes. Under the premise that the size of the chamber is limited, by providing a plurality of exhaust pipes, the size of a single exhaust pipe can be made smaller, which is not only conducive to ensuring the dimensional accuracy and structural strength of the single exhaust pipe, but also allows the single exhaust pipe to be matched with an exhaust device of lower power.

[0023] In an implementation of the first aspect, the semiconductor process chamber includes a plurality of chambers and a plurality of gas injectors; the plurality of chambers are arranged in sequence, the inner cavities of the plurality of chambers are interconnected, and each chamber is connected to at least one gas injector; the plurality of gas injectors are arranged in sequence along the arrangement direction of the plurality of chambers. In this solution, by connecting a plurality of chambers in series in sequence and arranging a plurality of gas injectors in parallel, the process gas injected by each gas injector can flow into a plurality of chambers in parallel, so that the process gas can participate in the process reactions in a plurality of chambers at the same time, so as to process a plurality of wafers in a plurality of chambers at the same time. The design of parallel flow of multiple process gases can ensure that each chamber can use a process gas with uniform mixing and consistent process parameters for process processing.

[0024] In an implementation of the first aspect, the chamber comprises an upper cover, a main body and a lower cover, the upper cover and the lower cover are respectively connected to opposite sides of the main body, and the gas injector is connected to the main body. The chamber structure of this solution is simple and reliable, with good sealing and good mass production.

[0025] In the second aspect, the embodiment of the present application provides a semiconductor process equipment, including a gas source and the semiconductor process chamber, wherein the gas source is connected to an end of the gas injector away from the chamber. The semiconductor process equipment of this solution can premix gas through the chamber wall of the semiconductor process chamber, so that the process gas is fully mixed and then enters the chamber to participate in the process reaction, which can improve the wafer processing accuracy and ensure the process quality.

[0026] In an implementation of the second aspect, the semiconductor process chamber includes an exhaust pipe, and the semiconductor process equipment further includes an exhaust device, and the exhaust device is connected to an end of the exhaust pipe away from the chamber. By connecting the exhaust device, the waste gas generated in the process can be fully discharged from the semiconductor process chamber to meet the process requirements and ensure the process quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic diagram of a three-dimensional assembly structure of a semiconductor process chamber in an embodiment of the present application;

[0028] Figure 2 yes Figure 1 Schematic diagram of the exploded structure of a semiconductor process chamber;

[0029] Figure 3 yes Figure 2 AA cross-sectional structural schematic diagram of a semiconductor process chamber;

[0030] Figure 4 yes Figure 2A schematic diagram of the exploded structure of the chamber in FIG.

[0031] Figure 5 yes Figure 4 A schematic diagram of a three-dimensional structure of the first main body portion 112 of the chamber in a viewing angle;

[0032] Figure 6 yes Figure 4 A schematic diagram of a three-dimensional structure of the first main body portion 112 of the chamber in another viewing angle;

[0033] Figure 7 yes Figure 5 A schematic BB cross-sectional structure diagram of the first main body portion 112;

[0034] Figure 8 yes Figure 7 A schematic diagram of the local enlarged structure at C in the middle;

[0035] Fig. 9 yes Figure 5 Another BB cross-sectional structural schematic diagram of the first main body portion 112;

[0036] Fig.10 yes Figure 4 A schematic diagram of the three-dimensional structure of the second main body part 113 of the chamber;

[0037] Fig.11 yes Figure 4 A schematic diagram of a three-dimensional assembly structure of the main body part 11a of the chamber;

[0038] Fig.12 yes Fig.11 A schematic DD cross-sectional structure diagram of the main body portion 11a;

[0039] Fig.13 yes Figure 2 A schematic diagram of the structure of a feeding pipe of a semiconductor process chamber;

[0040] Fig.14 yes Figure 2 A schematic diagram of the structure of a gas injector in a semiconductor process chamber;

[0041] Fig.15 yes Fig.14 EE cross-sectional structural diagram of the gas injector in FIG.

[0042] Fig.16 It is a schematic diagram showing a structure in which a plurality of gas injectors are arranged in a row;

[0043] Fig.17 yes Figure 2 A schematic diagram of the structure of an exhaust pipe of a semiconductor process chamber;

[0044] Fig.18 yes Figure 1 FF cross-sectional structure schematic diagram of a semiconductor process chamber;

[0045] Fig.19 yes Fig.18 A schematic diagram of the local enlarged structure at G in the middle;

[0046] Fig. 20 yes Fig.19 A schematic diagram of the local enlarged structure at position I in the middle;

[0047] Fig.21 yes Fig.18 Schematic diagram of the local enlarged structure at H in the middle;

[0048] Fig. 22 It is a schematic diagram of the framework structure of another semiconductor process chamber in an embodiment of the present application. DETAILED DESCRIPTION

[0049] In the description of the embodiments of the present application, unless otherwise specified, "multiple" refers to two or more. The terms "first", "second", etc. are only used for the purpose of distinguishing descriptions, and cannot be understood as implying or suggesting relative importance or implicitly indicating the number of technical features indicated. Features defined as "first" and "second" may explicitly or implicitly include one or more of the features. The term "connection" should be understood in a broad sense, for example, "connection" can be detachably connected or non-detachably connected; it can be directly connected or indirectly connected through an intermediate medium. "Fixed" should also be understood in a broad sense, for example, "fixed" can be directly fixed or indirectly fixed through an intermediate medium. Terms such as "upper", "lower", "front", "front", "back", and "rear" are defined relative to the placement of the structure in the accompanying drawings. It should be understood that these directional terms are relative concepts. They are a relative description and clarification, not a limitation on the absolute position of the structure.

[0050] The present application provides a semiconductor process equipment, which includes but is not limited to chemical equipment, semiconductor equipment, etc. The semiconductor process equipment can be used to process wafers, which include but are not limited to silicon wafers or other parts to be processed. The process includes but is not limited to chemical vapor deposition, selective epitaxial deposition, ion implantation, film growth, etc.

[0051] The semiconductor process equipment may include a gas source, a semiconductor process chamber, an exhaust device and other devices. Among them, the gas source and the exhaust device are both connected to the semiconductor process chamber. The gas source is used to input process gas into the semiconductor process chamber, and the process gas is a gas substance used to participate in the process in the semiconductor process chamber. The gas source can provide one or more process gases, and this embodiment does not limit the specific structure of the gas source and the type of process gas. The exhaust device is used to discharge the waste gas generated in the process from the semiconductor process chamber, and any suitable exhaust device can be used as needed, for example, the exhaust device can include a pump.

[0052] The structure of the semiconductor process chamber of this embodiment will be described in detail below.

[0053] Figure 1 and Figure 2 The basic structure of the semiconductor process chamber 1 of this embodiment is shown in FIG. Figure 1 and Figure 2 As shown, the semiconductor process chamber 1 may include a chamber 11, a plurality of gas injectors 12, a feed pipe 13 and a plurality of exhaust pipes 14. Among them, the shape of the chamber 11 may be roughly a body of revolution, and its axial and circumferential directions may be defined. The gas injector 12 and the feed pipe 13 may be connected to the same side of the chamber 11, and the exhaust pipe 14 may be connected to the other side of the chamber 11. The gas injector 12 (or the feed pipe 13) and the exhaust pipe 14 may be roughly located at opposite ends of a diameter of the chamber 11. The semiconductor process chamber 1 may include a carrier (not shown) disposed in the chamber 11, and the carrier is used to carry a wafer. The various components of the semiconductor process chamber 1 will be described one by one below.

[0054] Figure 3 for Figure 2 AA cross-sectional structural diagram of the chamber 11, Figure 4 for Figure 2 Schematic diagram of the exploded structure of the chamber 11. Figure 3 and Figure 4 As shown, schematically, the chamber 11 may include an upper cover 111, a first main body portion 112, a second main body portion 113 and a lower cover 114. The upper cover 111, the first main body portion 112, the second main body portion 113 and the lower cover 114 may be arranged in sequence, and the two adjacent ones may be assembled together. In this embodiment, the first main body portion 112 and the second main body portion 113 may be collectively referred to as the main body portion 11a. The upper cover 111, the first main body portion 112, the second main body portion 113 and the lower cover 114 may enclose an inner cavity 11b of the chamber 11, and the upper cover 111, the first main body portion 112, the second main body portion 113 and the lower cover 114 may all be the cavity wall of the chamber 11.

[0055] like Figure 3 and Figure 4As shown, the upper cover 111 may be a generally circular plate-shaped structure, and its edge region may be a skirt structure, which is matched with the first main body portion 112. The inner region of the upper cover 111 may have an arched curved surface structure, similar to a dome. In this embodiment, the upper cover 111 may also be referred to as an upper dome.

[0056] like Figure 3 and Figure 4 As shown, the first main body portion 112 and the second main body portion 113 can be roughly annular structures, and the two can be assembled and matched. In this embodiment, the first main body portion 112 and the second main body portion 113 can also be called a gasket. It can be understood that the scheme of assembling the first main body portion 112 and the second main body portion 113 into a gasket is only an example, and in fact, this embodiment does not limit the structural form of the gasket. For example, the gasket can be an integrated structure, or assembled from at least three gaskets.

[0057] Figure 5 and Figure 6 The three-dimensional structural schematic diagrams of the first main body part 112 at different viewing angles are shown respectively. Figure 7 for Figure 5 A schematic BB cross-sectional structure diagram of the first main body portion 112, Figure 8 for Figure 7 Schematic diagram of the local enlarged structure at point C in the middle.

[0058] like Figure 5-Figure 7 As shown, the first main body portion 112 may include a first wall 112d and a second wall 112e, etc. The first wall 112d and the second wall 112e may be local structures of the first main body portion 112 (in Figure 6 The first wall 112d and the second wall 112e are schematically shown in the figure), and the two walls can be connected. Schematically, the first wall 112d can include a first sub-wall 112g and a second sub-wall 112f, and the two sub-walls can be bent and connected. The first sub-wall 112g can be located outside the second wall 112e, combined with Figure 7 and Figure 3 As shown, it can also be considered that the first sub-wall 112g is located on the side of the second wall 112e away from the inner cavity 11b. Figure 7 and Figure 3 As shown, the second sub-wall 112f can be inclined toward the inner cavity 11b, so that the second sub-wall 112f can be located on one side of the second wall 112e along the axial direction. The above structural description of the first main body portion 112 is only an example, and the present embodiment is not limited thereto.

[0059] like Figure 5-Figure 7As shown, the first wall 112d and the second wall 112e can participate in forming the first channel 112a, and the first channel 112a can be located between the first wall 112d and the second wall 112e. The above-mentioned "participate in forming" means that the first wall 112d and the second wall 112e are part of the cavity wall that surrounds the first channel 112a, rather than the entire cavity wall. The first channel 112a can be roughly distributed in a band shape, and it can extend circumferentially (or the first channel 112a can be an annular structure), and the circumference is its length direction. The first channel 112a has a first opening 112b and a second opening 112c, and the first opening 112b and the second opening 112c are both contour boundaries of the first channel 112a. The first opening 112b can be an opening at one end of the first channel 112a extending radially, and the second opening 112c can be an opening at one end of the first channel 112a extending axially. Combined Figure 7 and Figure 3 As shown, the first channel 112a is connected to the inner cavity 11b of the chamber 11 through the first opening 112b, and the first channel 112a is connected to the outer space of the chamber 11 through the second opening 112c. That is, the first channel 112a is connected to the inner and outer spaces of the chamber 11. Along the direction from the second opening 112c to the first opening 112b, the first channel 112a can generally show an expansion trend, that is, the width of the first channel 112a can show an increasing trend.

[0060] like Figure 8 As shown, the surface of the first channel 112a may include a first surface 112h and a second surface 112i (in order to highlight the two surfaces, Figure 8 In the figure, the two surfaces are shaded and are not actually cross-sections. The first surface 112h and the second surface 112i may be connected.

[0061] The first surface 112h may be an arcuate surface extending in the circumferential direction, which may be arched toward the outside of the first main body portion 112 (or arched toward the outside of the chamber 11). The first surface 112h may face the first opening 112b, or the first surface 112h may be opposite to the first opening 112b, so that the process gas "reflected" by the first surface 112h may flow out from the first opening 112b and enter the inner cavity 11b. The first surface 112h may also face the second opening 112c, or the first surface 112h may be opposite to the second opening 112c, so that the process gas input from the second opening 112c may hit the first surface 112h to achieve premixed gas (i.e., premixing the process gas). The above-mentioned function of the first surface 112h will be further described below.

[0062] The second surface 112i may be an inclined surface extending in the circumferential direction, and may have a first side 112j and a second side 112k opposite to each other. From the first side 112j and the second side 112k, the second surface 112i may gradually extend toward the outside of the first main body portion 112 (or incline toward the outside of the chamber 11). The first side 112j may serve as a part of the first opening 112b, and the second side 112k is a common side between the second surface 112i and the first surface 112h.

[0063] like Figure 8 As shown, schematically, the second sub-wall 112f may have an inner surface 112m, and the inner surface 112m may extend in the axial direction and may be connected to the second surface 112i.

[0064] like Figure 7 As shown, schematically, the end of the first channel 112a in the length direction (i.e., circumferential direction) can form a first speaker structure 112n, and the expansion end of the first speaker structure 112n is close to the inner cavity 11b, and the expansion end refers to the large end of the first speaker structure 112n. Correspondingly, the small end of the first speaker structure 112n is far away from the inner cavity 11b. Due to the limitation of the view expression method, Figure 7 Only one first speaker structure 112n is shown in the figure, but in fact, the first speaker structures 112n can be formed at both opposite ends in the length direction of the first channel 112a.

[0065] The structural description of the first channel 112a is merely an example, and the embodiments of the present application are not actually limited thereto. For example, in some embodiments, there may be a plurality of first channels 112a, and the first channels 112a are separated by cavity walls.

[0066] In this embodiment, the first channel 112a is used to connect the gas injector 12 and serves as a channel for the process gas to enter the inner cavity 11b. In addition, the first channel 112a has the functions of premixing, guiding, and diverting the process gas, which will be further described below.

[0067] like Fig. 9 As shown, a third channel 112p may also be formed in the first main body portion 112. The formation method and internal structure of the third channel 112p may be substantially the same as those of the first channel 112a, and thus will not be described in detail here. Schematically, the end of the third channel 112p in the length direction (i.e., circumferential direction) may form a second speaker structure 112q, and the expansion end of the second speaker structure 112q is close to the inner cavity 11b, and the expansion end refers to the large end of the second speaker structure 112q. Correspondingly, the small end of the second speaker structure 112q is away from the inner cavity 11b. Due to the limitation of the view expression method, Fig. 9Only one second speaker structure 112q is shown in the figure, but in fact, the second speaker structures 112q can be formed at both opposite ends in the length direction of the third channel 112p.

[0068] The above structural description of the third channel 112p is merely an example, and the present embodiment is not actually limited thereto.

[0069] like Fig. 9 As shown, the third channel 112p and the first channel 112a can be roughly located on opposite sides of the first main body portion 112 in the radial direction. In this embodiment, the third channel 112p is used to connect to the exhaust pipe 14 as a channel for the process exhaust gas to be discharged from the inner cavity 11b, which will be further described below.

[0070] like Fig.10 As shown, a first groove 113a and a second groove 113b may be formed on the second main body portion 113, and the first groove 113a and the second groove 113b may be respectively located at opposite ends in the radial direction. The first groove 113a may penetrate the second main body portion 113 in the radial direction, and the second groove 113b does not penetrate the second main body portion 113 in the radial direction. The second main body portion 113 may cooperate with the first main body portion 112, so that the first groove 113a may participate in forming the second channel, and the second groove 113b may communicate with the third channel 112p. The cooperation between the second main body portion 113 and the first main body portion 112 will be further described below.

[0071] Fig.11 A schematic diagram showing a three-dimensional assembly structure of the second main body portion 113 and the first main body portion 112, Fig.12 yes Fig.11 DD cross-sectional view of the structure shown. Fig.11 and Fig.12 As shown, the second main body portion 113 and the first main body portion 112 can be assembled together, and the first main body portion 112 and the second main body portion 113 can enclose a second channel 11c, and part of the inner surface of the second channel 11c is the inner surface of the first groove 113a, that is, the first groove 113a participates in forming the second channel 11c. The second channel 11c communicates with the inner and outer spaces of the second main body portion 113, and the second channel 11c is also communicated with the inner cavity 11b of the chamber 11. The second channel 11c and the first channel 112a can be located on the same side of the chamber 11 (for example, Fig.12 The second channel 11c and the first channel 112a can be arranged in a stacked manner approximately along the axial direction. The third channel 112p can be connected to the second groove 113b, and it can also be considered that the third channel 112p can be connected to the second groove 113b to form a large third channel, and the third channel can be located on opposite sides of the chamber 11 with the first channel 112a (or the second channel 11c).

[0072] like Figure 3 and Figure 4 As shown, the lower cover 114 may be substantially in a funnel structure, and its edge region near one end of the second main body portion 113 may be in a skirt structure, and the skirt structure cooperates with the second main body portion 113. In this embodiment, the lower cover 114 may also be referred to as a lower dome.

[0073] It can be understood that the above structural description of the chamber 11 is only an example, and in fact the structure of the chamber 11 is not limited thereto.

[0074] like Fig.13 As shown, the feed pipe 13 may be a flat tubular structure, one end of which (for example Fig.13 The right end in the perspective of the feeding tube 13 may be arc-shaped, and the end may be loaded into the second channel 11c. The surface of the end may form a boss 13a, and the boss 13a may contact the gas injector 12 and support the gas injector 12. The end may also be provided with a second matching groove 13b, and the second matching groove 13b may cooperate with the second wall 112e of the first main body part 112 to achieve sealing. The above-mentioned assembly and matching related to the feeding tube 13 will be further described below. The above description of the structure of the feeding tube 13 is only an example, and the present embodiment is actually not limited to this.

[0075] Fig.14 A schematic diagram showing the three-dimensional structure of the gas injector 12 is shown. Fig.15 for Fig.14 EE cross-sectional view of the structure shown. Fig.14 and Fig.15 As shown, the gas injector 12 may include a connecting portion 122 and a plurality of air inlet pipes 121. The connecting portion 122 may be substantially in the shape of an arc strip, and the plurality of air inlet pipes 121 are arranged at intervals and are all connected to the same side of the connecting portion 122, and the lengths of the air inlet pipes 121 may be inconsistent. It is understood that the number of air inlet pipes 121 shown in the figure is only an example, and the present embodiment is not limited thereto, for example, the number of air inlet pipes 121 may also be 1, 2, or more than 4.

[0076] like Fig.14 and Fig.15As shown, the connection part 122 is provided with air holes 122c, and the number of the air holes 122c can be consistent with the number of the air inlet pipe 121. The air holes 122c penetrate the surface of the connection part 122 and form the air outlet 122a. The axis of the air hole 122c can be roughly perpendicular to the axis of the internal pipe 121a of the air inlet pipe 121, and the air hole 122c can be connected with the internal pipe 121a, and the two can form the gas flow channel 12a of the gas injector 12. The connection part 122 can also have a boss 123, and the boss 123 and the air outlet 122a can be located on the same side of the connection part 122. The connection part 122 can also have a first matching groove 122b. In this embodiment, the connection part 122 can be detachably assembled to the chamber 11 and is located in the first channel 112a, and the air inlet pipe 121 can be located outside the chamber 11. The boss 123 can be inserted into the first channel 112a and cooperate with the inner surface of the first channel 112a. The boss 123 can play a limiting role to prevent the gas injector 12 from falling out of the first channel 112a. The first matching groove 122b can cooperate with the first wall 112d of the first main body part 112 to achieve sealing. The above-mentioned assembly and cooperation between the gas injector 12 and the chamber 11 will be further described below.

[0077] It can be understood that the above structural description of the gas injector 12 is only an example, and in fact the structure of the gas injector 12 is not limited thereto.

[0078] like Fig.16 As shown, in this embodiment, a plurality of gas injectors 12 can be closely arranged and detachably installed in the first channel 112a (to be described below). It can be understood that Fig.16 5 gas injectors 12 are shown in the figure, but the present embodiment is not limited thereto. In fact, the number of gas injectors 12 can be at least 1. In some embodiments, the difference is that the multiple gas injectors 12 can be dispersedly arranged, a part of the gas injectors 12 can be installed in one first channel 112a, and another part of the gas injectors 12 can be installed in another first channel 112a.

[0079] In this embodiment, the air inlet pipe 121 of the gas injector 12 can be connected to the gas source, and the gas source can inject the process gas into the inner cavity 11b through the gas injector 12. Each gas injector 12 can be independently connected to the gas source, so that the process parameters of the process gas input by at least one gas injector 12 can be different from the process parameters of the process gas input by other gas injectors 12. For example, in one embodiment, the process parameters of the process gas input by each gas injector 12 are different. Among them, the process parameters include but are not limited to the type, pressure, flow rate, etc. of the process gas. In this embodiment, by setting a plurality of independent gas injectors 12, it is convenient to independently supply gas to each gas injector 12, and the process parameters can be flexibly and finely adjusted to expand the control range of the process parameters, so as to meet the process needs. It can be understood that when there are multiple gas injectors 12, process gases with the same process parameters can also be input into multiple gas injectors 12.

[0080] In this embodiment, different air inlet pipes 121 of a single gas injector 12 can also be connected to different gas sources to input process gases with different process parameters. This can enhance the adjustment of process parameters and further expand the control range of process parameters. It is understandable that different air inlet pipes 121 of a single gas injector 12 can also input process gases with the same process parameters.

[0081] The material of the gas injector needs to adapt to the characteristics of the process gas. For example, the material of the gas injector cannot react with the process gas, or needs to withstand the corrosion of the process gas. If multiple process gases need to be introduced, conventional gas injectors need to adapt to the characteristics of multiple process gases at the same time. Since only a few materials can meet this requirement, the range of material selection is greatly limited.

[0082] In some scenarios, the gas injector can also play a role in heat conduction, realizing heat exchange between the chamber 11 and the outside. The material of the gas injector has an impact on heat exchange.

[0083] In this embodiment, schematically, the material of at least one of the inlet pipes 121 of the gas injector 12 can be different from the material of the other inlet pipes 121, so as to allow multiple process gases to be introduced into the gas injector 12. Schematically, the inlet pipes 121 of the gas injector 12 can be made of different materials, so as to allow different process gases to flow through different inlet pipes 121. This is conducive to expanding the material selection range of the gas injector 12.

[0084] In this embodiment, schematically, the connecting portion 122 can be made of a single material, and the material of the connecting portion 122 can be compatible with multiple process gases introduced into each inlet pipe 121. Alternatively, different regions of the connecting portion 122 can be made of different materials, wherein one region refers to a portion connected to one inlet pipe 121 (i.e., the portion where the pore 122c is located), and multiple such regions are connected to multiple inlet pipes 121 in a one-to-one correspondence. The material of each region of the connecting portion 122 can be consistent with the material of the corresponding inlet pipe 121. This is conducive to expanding the material selection range of the gas injector 12.

[0085] It is understandable that the gas injector 12 may be entirely made of one material.

[0086] In this embodiment, schematically, the material of at least one gas injector 12 can be different from the material of other gas injectors 12, so as to allow multiple process gases to be introduced into the first channel 112a. Schematically, different gas injectors 12 can be made of different materials. By independently arranging multiple gas injectors 12, it is convenient to select a separate material for each gas injector 12, so that multiple gas injectors 12 can be made of multiple materials, avoiding the defect that a single gas injector in the conventional solution needs to adapt to the characteristics of multiple process gases at the same time, which is conducive to broadening the range of material selection. It is understandable that different gas injectors 12 can also be made of the same material.

[0087] In this embodiment, since the material selection range of the gas injector 12 is relatively large, the heat exchange process can be adjusted by selecting different materials to meet product requirements. For example, a material with faster heat conduction can be selected to manufacture the gas injector 12 so that the temperature in the chamber 11 can be quickly reduced; or a material with slower heat conduction can be selected to manufacture the gas injector 12 so that a certain process temperature can be maintained in the chamber 11.

[0088] like Fig.17 As shown, the exhaust pipe 14 may be substantially in the shape of a flat tube, one end of which may be in an arc shape, and the end may be connected to the main body 11a of the chamber 11, so that the exhaust pipe 14 may be connected to the third channel 112p and the second groove 113b (to be described below). The other end of the exhaust pipe 14 may be connected to an exhaust device. Schematically, there may be multiple exhaust pipes 14, for example Fig.17 Two exhaust pipes 14 are shown. The structures of the multiple exhaust pipes 14 may be basically the same or different, and this embodiment does not limit this. Under the premise that the size of the chamber 11 is limited, by providing multiple exhaust pipes 14, the size of a single exhaust pipe 14 can be made smaller, which is not only conducive to ensuring the dimensional accuracy and structural strength of the single exhaust pipe 14, but also can match the single exhaust pipe 14 with a smaller power exhaust device. In other embodiments, there may be only one exhaust pipe, and the size of the exhaust pipe may be larger.

[0089] The structures of the various components in the semiconductor process chamber 1 are described in detail above, and the coordination between the various components in the semiconductor process chamber 1 will be described below. Figure 18-Figure 21 The assembly structure of the chamber 11, the gas injector 12, the feed pipe 13 and the exhaust pipe 14 is shown. Fig.18 yes Figure 1 FF cross-sectional structural diagram of the structure shown, Fig.19 yes Fig.18 The schematic diagram of the local enlarged structure at G in the middle, Fig. 20 yes Fig.19 The local enlarged structural diagram at I in the middle, Fig.21 yes Fig.18 Schematic diagram of the local enlarged structure at H in the middle.

[0090] like Fig.18 As shown, the upper cover 111 , the first main body portion 112 , the second main body portion 113 and the lower cover 114 are connected in sequence and surround an inner cavity 11 b of the chamber 11 .

[0091] Combination Fig.18 and Fig.19 As shown, the connecting portion 122 of the gas injector 12 can be installed in the first channel 112a of the first main body portion 112, and the gas inlet pipe 121 of the gas injector 12 can be exposed outside the chamber 11. Fig.19 and Fig.15 As shown, the gas flow channel 12a of the gas injector 12 can be connected to the first channel 112a through the gas outlet 122a, and the gas flow channel 12a can be connected to the inner cavity 11b through the first channel 112a. In this embodiment, the relative position of the first channel 112a and the carrier in the inner cavity 11b can be reasonably designed to ensure that the process gas entering the inner cavity 11b through the first channel 112a can reach the side of the wafer to be processed so that the process can be performed on the side to be processed, and the process gas basically does not reach the back side of the wafer that does not require process treatment. For example, the height of the first channel 112a can be made greater than the height of the carrier in the axial direction to achieve the above purpose. It can be understood that Fig.18 and Fig.19 Only the cross-sectional assembly structure of a single gas injector 12 and the first body portion 112 is shown. In fact, the cross-sectional assembly structure of each gas injector 12 and the first body portion 112 may be the same.

[0092] In addition, if Fig. 20As shown, the first wall 112d can be inserted into the first matching groove 122b on the connecting portion 122, and the first wall 112d and the first matching groove 122b form a "mosaic fit", which is conducive to improving air tightness, reducing the risk of air leakage, and preventing foreign impurities from entering the inner cavity 11b and causing pollution. The boss 123 can form a fit with the inner surfaces of both sides of the first channel 112a ( Fig. 20 In the figure, the size of the gap between the boss 123 and the inner surface of the first channel 112a is a schematic diagram). The boss 123 can play a limiting role to prevent the gas injector 12 from escaping from the first channel 112a.

[0093] Combination Fig.18 and Fig.19 As shown, the feeding tube 13 can be installed in the second channel 11c of the chamber 11. Fig.19 and Fig. 20 , the boss 13a on the feed tube 13 can contact the connection part 122, and the boss 13a supports the connection part 122. This design can use the feed tube 13 to assemble, position and support the gas injector 12, without the need to design an additional positioning support structure, which can save structural space. It is understandable that it is also possible not to use the feed tube 13 to assemble, position and support the gas injector 12, for example, the feed tube 13 and the gas injector 12 may not have a connection relationship. In addition, Fig. 20 As shown, the second wall 112e can be inserted into the second matching groove 13b on the feeding tube 13, and the second wall 112e and the second matching groove 13b form a "mosaic fit". This "mosaic fit" is conducive to improving air tightness, reducing the risk of air leakage, and preventing external impurities from entering the inner cavity 11b and causing contamination.

[0094] like Fig.21 As shown, the exhaust pipe 14 can be connected to the first main body portion 112 and the second main body portion 113, and the inner channel of the exhaust pipe 14 can be connected to the third channel 112p and the second groove 113b (the third channel 112p and the second groove 113b can form a large third channel), so that the exhaust pipe 14 can be connected to the inner cavity 11b. This embodiment does not limit the specific connection structure between the exhaust pipe 14 and the chamber 11.

[0095] The principle of a process performed in the semiconductor process chamber 1 will be described below.

[0096] refer to Fig.19 As shown, the wafer can be fed from the feeding tube 13 into the inner cavity 11 b by a robot arm and positioned on a stage in the inner cavity 11 b. The gas source can be connected to the gas inlet pipes 121 and deliver process gas to each gas inlet pipe 121 . Fig.19 The dashed lines with arrows are used to indicate the flow paths of process gases. Fig.19As shown, the process gas can enter the first channel 112a through the gas flow channel 12a. Figure 8 As shown, from the second opening 112c to the first opening 112b, the first channel 112a tends to expand, which enables the process gas to fully enter the first channel 112a, so that the gas flow in the first channel 112a is relatively large. When multiple process gases encounter the first surface 112h, the first surface 112h can mix the multiple process gases because the first surface 112h has the above-mentioned structure and position design. This mixing occurs before the process gases formally enter the inner cavity 11b, so it can be called pre-mixing. A portion of the pre-mixed process gas can be directly "reflected" by the first surface 112h, combined with Fig.19 and Fig. 9 As shown, the process gas L0 "reflected" by the first surface 112h can enter the inner cavity 11b through the first opening 112b and reach the wafer position. Another part of the premixed process gas can be divided into a first path L1 and a second path L2 roughly at the junction of the first surface 112h and the second surface 112i. The first path L1 can flow into the inner cavity 11b through the first opening 112b roughly in the radial direction and reach the wafer position. The second path L2 can flow upward along the second surface 112i, and can be divided into a third path L3 and a fourth path L4 roughly at the junction of the second surface 112i and the inner surface 112m, wherein the third path L3 can flow into the inner cavity 11b roughly in the radial direction through the first opening 112b, and the fourth path L4 can flow upward along the inner surface 112m to the upper cover 111. It can be seen from this that the second surface 112i has a guiding and diverting function, and the inner surface 112m has a guiding function.

[0097] In this embodiment, by forming a premixed gas channel (i.e., the first channel 112a) on the wall of the chamber 11, the process gas can be fully mixed and then enter the inner cavity 11b, which is beneficial to ensure the process quality. In addition, since the process gas is guided and diverted by the surface of the first channel 112a to achieve mixing, the mixing is a barrier-free mixing, which can ensure the pressure of the process gas, so that the process gas flows in place, can reduce vortices, ensure the stability of the flow field, and the sealing requirements for the chamber 11 are also low. On the contrary, the process gas in the conventional solution collides with obstacles (such as baffles) to achieve mixing. The conventional solution will cause a large pressure loss, require the gas source to have a large power, and is not conducive to the gas flowing in place, affecting the process quality. It may also cause vortices, resulting in poor flow field stability and high requirements for the sealing of the chamber.

[0098] In this embodiment, by adding a second surface 112i between the first surface 112h and the upper cover 111, the first surface 112h and the upper cover 111 can maintain an appropriate axial spacing, which can avoid the defect that a large amount of process gas may impact the upper cover 111 and increase the probability of leakage due to the first surface 112h being too close to the upper cover 111; and, through the guiding and diversion effect of the second surface 112i, more process gas can flow roughly radially to the wafer, ensuring the flow rate of process gas participating in the process reaction and ensuring the effective utilization rate of process gas. It is easy to understand from the above that the axial spacing between the first surface 112h and the carrier and the upper cover 111 can be comprehensively considered to ensure that sufficient process gas can reach the side of the wafer to be processed and avoid a large amount of process gas impacting the upper cover 111. It can be understood that the second surface 112i and the inner surface 112m are not necessary.

[0099] In this embodiment, by setting up a plurality of independent and detachable gas injectors 12, each gas injector 12 can be independently supplied with gas (for example, up to 20 lines of process gas can be simultaneously supplied), and the process parameters can be flexibly and finely adjusted, and the control range of the process parameters can be expanded to meet the process needs. In addition, risk zoning control can also be achieved. When a problem occurs, only the faulty gas injector 12 needs to be replaced, and other gas injectors 12 can continue to be used, so that the process can proceed as usual. On the contrary, the conventional solution only uses one fixed gas injector, resulting in a limited adjustment range of the process parameters, which is not only difficult to meet the flexible and fine process needs, but also causes the process to be stopped once the gas injector is replaced.

[0100] refer to Fig.21 As shown, the process waste gas generated by the process reaction can flow from the inner cavity 11b into the third channel 112p and the second groove 113b, and be discharged through the exhaust pipe 14. The exhaust pipe 14 can be connected to an exhaust device, and the exhaust device can extract the process waste gas. Due to the structure of the third channel 112p and the use of the exhaust device, the process waste gas can be fully discharged and the backflow of the process waste gas can be avoided.

[0101] Illustratively, the semiconductor process chamber 1 of the above embodiment can perform a process on a single wafer. The following embodiments can be derived based on the above embodiment to achieve the purpose of performing a process on multiple wafers at the same time.

[0102] Fig. 22 FIG. 2 is a block diagram showing a structure of a semiconductor process chamber 2 in another embodiment. Fig. 22 As shown, the semiconductor process chamber 2 may include a chamber 211, a chamber 212, a feed pipe 23, a plurality of gas injectors 122 and an exhaust pipe 24. Schematically, the chamber 211 and the chamber 212 may be arranged along Fig. 22The arrangement direction shown in the figure can be, for example, the radial direction mentioned above. The first channel of chamber 211 can be connected to the first channel of chamber 212, and the inner cavity of chamber 211 can be connected to the inner cavity of chamber 212. A carrier can be set in both chamber 211 and chamber 212. Wafers can be fed into chamber 211 and chamber 212 through feeding pipe 23. Both chamber 211 and chamber 212 can be connected to at least one gas injector 122, and each gas injector 122 can be arranged along the arrangement direction, so that the process gas injected by each gas injector 122 can flow into the inner cavity of chamber 211 and the inner cavity of chamber 212 in parallel, so that the process gas can participate in the process reaction in chamber 211 and chamber 212 at the same time, so as to process the wafers in chamber 211 and chamber 212 at the same time. The design of parallel flow of multiple process gases can ensure that each chamber can use process gases with uniform mixing and consistent process parameters for process processing. After the process is completed, the exhaust gas can be discharged from the exhaust pipe 24. It can be understood that the above description is based on the example that the semiconductor process chamber 2 is provided with two chambers, and in fact the number of chambers can be at least two.

[0103] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A semiconductor process chamber, characterized in that: comprising a chamber and a gas injector, the chamber having a circumference; The cavity wall of the chamber forms an inner cavity, the cavity wall is provided with a first channel, the first channel extends along the circumferential direction and is distributed in a band shape, the first channel has a first opening, the first channel is connected with the inner cavity through the first opening, the surface of the first channel includes a first surface and a second surface, the first surface is an arc surface and faces the first opening; the second surface includes a first edge and a second edge, the first edge is opposite to the second edge, the first edge is a part of the first opening, the second edge is a common edge of the second surface and the first surface, and the second surface extends obliquely toward the outside of the cavity along the direction from the first edge to the second edge; The gas injector includes a connecting part, which is connected to the chamber and is located in the first channel; the gas injector has multiple gas flow channels, one of which runs through the surface of the connecting part and forms a gas outlet, and the multiple gas flow channels are connected to the first channel through the multiple gas outlets, and the gas outlets are opposite to the first surface and have a distance therebetween.

2. The semiconductor process chamber according to claim 1, characterized in that: Two opposite ends of the first channel in the length direction form a first horn structure, and the expansion end of the first horn structure faces the inner cavity.

3. The semiconductor process chamber according to claim 1, wherein: The first opening and the air outlet are both located on the concave side of the arc surface.

4. The semiconductor process chamber according to claim 1, wherein: The first channel has a second opening, the first channel is connected to the external space of the chamber through the second opening, and the first channel has an expansion trend along the direction from the second opening to the first opening; The connecting portion is connected to the second opening.

5. The semiconductor process chamber according to claim 1, wherein: The cavity wall includes a first wall and a second wall, the first wall is connected to the second wall, a portion of the first wall is located on a side of the second wall facing away from the inner cavity, and the first wall and the second wall participate in forming the first channel.

6. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber comprises a plurality of the gas injectors, each of which is detachably connected to the chamber.

7. The semiconductor process chamber according to claim 6, characterized in that: The material of at least one of the gas injectors is different from that of the other gas injectors.

8. The semiconductor process chamber according to claim 1, wherein: The gas injector also includes a plurality of air inlet pipes, which are all connected to the connecting part; the connecting part is provided with a plurality of air holes, one of which is connected to one of the air inlet pipes to form a gas flow channel, and each of the air holes penetrates the surface of the connecting part to form the air outlet.

9. The semiconductor process chamber according to claim 8, characterized in that: The material of at least one of the air intake pipes is different from that of the other air intake pipes.

10. The semiconductor process chamber according to claim 1, wherein: The connecting portion has a first matching groove, and the cavity wall is inserted into the first matching groove.

11. The semiconductor process chamber according to claim 1, wherein: The cavity wall is further provided with a second channel, and the second channel is connected to the inner cavity; the semiconductor process chamber also includes a feeding pipe, and a part of the feeding pipe is installed in the second channel.

12. The semiconductor process chamber according to claim 11, characterized in that: The feeding tube has a boss, the boss extends into the first channel, and the top surface of the boss is connected to the connecting part.

13. The semiconductor process chamber according to claim 11 or 12, characterized in that: The feeding tube has a second matching groove, and the cavity wall is inserted into the second matching groove.

14. The semiconductor process chamber according to claim 1, wherein: The cavity wall is also provided with a third channel, the third channel is connected to the inner cavity, and the third channel and the first channel are respectively located on opposite sides of the cavity wall; the semiconductor process chamber also includes an exhaust pipe, the exhaust pipe is connected to the cavity wall and connected to the third channel.

15. The semiconductor process chamber according to claim 14, wherein: One end of the third channel communicating with the inner cavity forms a second horn structure, and the expansion end of the second horn structure faces the inner cavity.

16. The semiconductor process chamber according to claim 14 or 15, characterized in that: The semiconductor process chamber includes a plurality of exhaust pipes.

17. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber includes a plurality of chambers and a plurality of gas injectors; the plurality of chambers are arranged in sequence, the inner cavities of the plurality of chambers are interconnected, and each chamber is connected to at least one gas injector; the plurality of gas injectors are arranged in sequence along the arrangement direction of the plurality of chambers.

18. The semiconductor process chamber according to claim 1, wherein: The chamber comprises an upper cover, a main body and a lower cover, wherein the upper cover and the lower cover are respectively connected to opposite sides of the main body, and the gas injector is connected to the main body.

19. A semiconductor process equipment, characterized in that: It comprises a gas source and the semiconductor process chamber according to any one of claims 1 to 18, wherein the gas source is connected to an end of the gas injector facing away from the chamber.

20. The semiconductor process equipment according to claim 19, characterized in that: The semiconductor process chamber comprises an exhaust pipe, and the semiconductor process equipment further comprises an exhaust device, wherein the exhaust device is connected to an end of the exhaust pipe away from the chamber.

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