Diamond semiconductor device and method of making same

Abstract

The application relates to a diamond semiconductor device and a manufacturing method thereof. The diamond semiconductor device comprises a device main body, a gold electrode arranged on the surface of the device main body, a dielectric layer arranged on the surface of the device main body, the dielectric layer surrounding the gold electrode, and an adhesive metal layer connecting the gold electrode and the dielectric layer respectively, the adhesive metal layer being used for leading out the electrode. The dielectric layer surrounding the gold electrode is arranged on the surface of the device main body, and the adhesive metal layer connecting the gold electrode and the dielectric layer is arranged, the electrode is led out through the adhesive metal layer and the gold electrode, the adhesive property between the dielectric layer and the device main body is strong, and the adhesive property between the adhesive metal layer and the dielectric layer is strong, so that the adhesive metal layer can play a role in reinforcing the gold electrode, and the situation that the gold electrode falls off during subsequent external packaging interconnection is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of diamond semiconductor, in particular to a diamond semiconductor device and a manufacturing method thereof. BACKGROUND

[0002] As the fourth-generation ultra-wide bandgap semiconductor material, diamond material exhibits unique advantages and application prospects in multiple fields. As a carbon allotrope, diamond has an extremely strong and stable crystal structure, with carbon atoms connected to each other in an SP3 hybridization manner. This makes diamond have a series of outstanding physical properties, such as high breakdown field strength, large carrier mobility, strong heat dissipation capacity, and high temperature resistance, corrosion resistance, etc., especially in the semiconductor field.

[0003] The advantages of diamond semiconductor mainly lie in its high electron mobility and high thermal stability. At room temperature, the electron and hole mobilities of diamond are much higher than those of the third-generation semiconductor materials GaN and SiC, which makes diamond semiconductor have great application potential in high-power electronic devices, high-frequency communication and microwave radar fields. In addition, the thermal conductivity of diamond semiconductor is extremely high, which is crucial for the preparation of high-performance semiconductor devices such as radio frequency power amplifiers and high-power lasers.

[0004] In related technologies, when making the lead-out electrode of the diamond semiconductor device, a gold electrode is generally used. Gold can form ohmic contact with the diamond surface treated by hydrogen surface, thereby forming an ohmic electrode. However, the adhesion between the gold electrode and the diamond is poor, and the gold electrode is easily detached during subsequent external packaging interconnection. SUMMARY

[0005] Therefore, it is necessary to provide a diamond semiconductor device and a manufacturing method thereof capable of reducing the detachment of the gold electrode to solve the above technical problems.

[0006] In a first aspect, the present application provides a diamond semiconductor device, comprising: a device body; a gold electrode, the gold electrode being arranged on the surface of the device body; a dielectric layer, the dielectric layer being arranged on the surface of the device body, the dielectric layer surrounding the gold electrode; and an adhesion metal layer, the adhesion metal layer being connected to the gold electrode and the dielectric layer respectively, the adhesion metal layer being used for the lead-out electrode.

[0007] In one of the embodiments, the thickness of the dielectric layer is greater than the thickness of the gold electrode, and the dielectric layer covers a part of the top surface of the gold electrode.

[0008] In one of the embodiments, the interface between the adhesion metal layer and the dielectric layer completely surrounds the interface between the adhesion metal layer and the gold electrode.

[0009] In one of the embodiments, the material of the medium layer is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0010] In one of the embodiments, the material of the adhesion metal layer is at least one of titanium and nickel.

[0011] In one of the embodiments, further comprising: a reinforcing metal layer, the reinforcing metal layer is arranged on the adhesion metal layer, and the reinforcing metal layer is used for leading out the electrode.

[0012] In one of the embodiments, the material of the reinforcing metal layer is at least one of aluminum and gold.

[0013] In one of the embodiments, the thickness of the medium layer is 10 nanometers to 100 nanometers, the thickness of the adhesion metal layer is 10 nanometers to 50 nanometers, and the thickness of the reinforcing metal layer is greater than 1 micrometer.

[0014] In a second aspect, the application further provides a method for manufacturing a diamond semiconductor device, the method comprising: providing a device main body; wherein a gold electrode is arranged on the surface of the device main body; forming a medium layer on the surface of the device main body; wherein the medium layer surrounds the gold electrode; opening a hole in the medium layer to expose the gold electrode; forming an adhesion metal layer on the medium layer and the gold electrode; wherein the adhesion metal layer is connected to the gold electrode and the medium layer respectively, and the adhesion metal layer is used for leading out the electrode.

[0015] In one of the embodiments, the method further comprises: forming a reinforcing metal layer on the adhesion metal layer; wherein the reinforcing metal layer is used for leading out the electrode.

[0016] The above-mentioned diamond semiconductor device and the manufacturing method thereof, by arranging the medium layer surrounding the gold electrode on the surface of the device main body, and arranging the adhesion metal layer connected to the gold electrode and the medium layer respectively, the electrode is led out through the adhesion metal layer and the gold electrode, since the adhesion between the medium layer and the device main body is strong, and the adhesion between the adhesion metal layer and the medium layer is strong, therefore, the adhesion metal layer can play a role of reinforcing the gold electrode, and reduce the situation of the gold electrode falling off when performing external packaging interconnection subsequently. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort based on these drawings.

[0018] Figure 1 A schematic diagram of a structure of a diamond semiconductor device in one embodiment;

[0019] Figure 2 A schematic diagram of a structure of a dielectric layer and a gold electrode in one embodiment;

[0020] Figure 3 A schematic diagram of a structure of a dielectric layer and an adhesion metal layer in one embodiment;

[0021] Figure 4 A schematic diagram of a structure of a diamond semiconductor device in another embodiment;

[0022] Figure 5 A schematic diagram of a structure of a diamond semiconductor device in yet another embodiment;

[0023] Figure 6 A schematic diagram of a structure of a diamond semiconductor device in still another embodiment;

[0024] Figure 7 A flow chart of a method of fabricating a diamond semiconductor device in one embodiment;

[0025] Figure 8 A flow chart of a method of fabricating a diamond semiconductor device in another embodiment;

[0026] Figure 9 A block diagram of an apparatus for fabricating a diamond semiconductor device in one embodiment;

[0027] BRIEF DESCRIPTION OF DRAWINGS

[0028] Device body 110, gold electrode 120, dielectric layer 130, adhesion metal layer 140, reinforcing metal layer 150, device providing module 310, dielectric layer forming module 320, dielectric layer opening module 330, metal layer forming module 340. DETAILED DESCRIPTION

[0029] In order to facilitate the understanding of the present application, a more complete and thorough description of the present application will be presented with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0031] It can be understood that the terms "first", "second", etc. used in the present application can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0032] Spatial relationship terms such as "under", "below", "lower", "underneath", "on", "upper", etc. can be used herein to describe the relationship of one element or feature shown in the figure with other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the figure is turned over, the element or feature described as "under" or "below" or "under" the other element or feature will be oriented "on" the other element or feature. Therefore, the example terms "under" and "below" can include both the upper and lower orientations. In addition, the device can also include other orientations (such as 90 degrees or other orientations), and the spatial descriptions used herein are interpreted accordingly.

[0033] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to another element, or connected to another element through a central element. In addition, "connected" in the following embodiments should be understood as "electrically connected", "communicatively connected", etc. if there is transmission of electrical signals or data between the connected objects.

[0034] As used herein, the singular forms "a", "an" and "the" can also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms "comprise / contain" or "have" or the like specify the presence of stated features, integers, steps, operations, components, parts or combinations thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in the specification includes any and all combinations of the related listed items.

[0035] As described in the background, in the prior art diamond semiconductor device, when using gold electrodes as lead-out electrodes, the gold electrodes are prone to falling off during subsequent external packaging interconnection processes, resulting in a problem of reduced reliability of the diamond semiconductor device. Research has found that the reason for this problem is that the adhesion of the gold electrode is poor when it comes into contact with the hydrogen surface treated diamond surface.

[0036] Based on the above reasons, the present application provides a diamond semiconductor device and a manufacturing method thereof, which can reduce the occurrence of gold electrode falling off during subsequent external packaging interconnection.

[0037] In one embodiment, such as Figure 1 As shown, a diamond semiconductor device is provided, including: a device body 110, a gold electrode 120, a dielectric layer 130, and an adhesive metal layer 140. The gold electrode 120 is disposed on the surface of the device body 110; the dielectric layer 130 is disposed on the surface of the device body 110 and surrounds the gold electrode 120; the adhesive metal layer 140 connects the gold electrode 120 and the dielectric layer 130 respectively, and the adhesive metal layer 140 is used to lead out electrodes.

[0038] Specifically, the device body 110 is a semiconductor device with a diamond material as its main structure. Its surface is made of diamond material. The device body 110 may include a diamond substrate and a diamond epitaxial layer. After fabrication using semiconductor processes, it can form semiconductor devices with different functions. Gold electrodes 120 are provided at the locations on the surface of the device body 110 where electrodes are needed. The gold electrodes 120 contact the surface of the hydrogen-treated device body 110 to form ohmic contacts, thus forming ohmic electrodes. The number, shape, and other parameters of the gold electrodes 120 can be arbitrarily set according to the needs of the semiconductor device and are not limited here.

[0039] A dielectric layer 130 is also disposed on the surface of the device body 110. The dielectric layer 130 surrounds the gold electrode 120, meaning that the side of the gold electrode 120 contacts the dielectric layer 130, and the gold electrode 120 is located in the pores formed by the dielectric layer 130. An adhesive metal layer 140 is disposed on the dielectric layer 130 and the gold electrode 120, connecting the gold electrode 120 and the dielectric layer 130 respectively. The adhesive metal layer 140 is used to lead out the electrodes of the semiconductor device. Because the dielectric layer 130 has strong adhesion to the device body 110, and the adhesive metal layer 140 has strong adhesion to the dielectric layer 130, the adhesive metal layer 140 can reinforce the gold electrode 120, reducing the possibility of the gold electrode 120 detaching during subsequent external packaging interconnection.

[0040] In one embodiment, such as Figure 2As shown, the thickness of the medium layer 130 is greater than the thickness of the gold electrode 120, and the medium layer 130 covers part of the top surface of the gold electrode 120. Specifically, in this embodiment, the thickness of the medium layer 130 is set to be greater than the thickness of the gold electrode 120, and at this time, the part of the medium layer 130 that exceeds the gold electrode 120 in the thickness direction can extend to the top surface of the gold electrode 120, thereby covering part of the top surface of the gold electrode 120. In this case, the part of the medium layer 130 that covers the top surface of the gold electrode 120 forms a mechanical limiting structure, thereby further playing a role in reinforcing the gold electrode 120. It can be understood that the shape of the contact surface between the medium layer 130 and the top surface of the gold electrode 120 can be various, and in general, for the convenience of process manufacturing, the gold electrode 120 is cylindrical, and the shape of the contact surface is annular, so as to fix the position around the top surface of the gold electrode 120. In some other embodiments, the thickness of the medium layer 130 can also be equal to or less than the thickness of the gold electrode 120, and at this time, the adhesion between the adhesion metal layer 140 and the medium layer 130 can also complete the reinforcement of the gold electrode 120 and reduce the situation of the gold electrode 120 falling off.

[0041] In one embodiment, as shown in FIG. 1, Figure 3 Specifically, in this embodiment, the interface between the adhesion metal layer 140 and the medium layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120, and in this case, the adhesion metal layer 140 completely covers the gold electrode 120 and covers the medium layer 130 after exceeding the top surface of the gold electrode 120, and at this time, the adhesion metal layer 140 covers the top surface of the gold electrode 120 around, which further enhances the reinforcing effect of the adhesion metal layer 140 on the gold electrode 120 by increasing the connection area between the adhesion metal layer 140 and the medium layer 130. In some other embodiments, the adhesion metal layer 140 can also cover part of the top surface of the gold electrode 120.

[0042] In one embodiment, as shown in FIG. 1, Figure 4 Specifically, in this embodiment, the thickness of the medium layer 130 is greater than the thickness of the gold electrode 120, and the medium layer 130 covers part of the top surface of the gold electrode 120, and the interface between the adhesion metal layer 140 and the medium layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120. Through such a setting, in the case of reinforcing the gold electrode 120 by the limiting structure of the medium layer 130, the adhesion area between the adhesion metal layer 140 and the medium layer 130 can be further increased to further improve the reinforcing ability of the gold electrode 120 and further reduce the situation of the gold electrode 120 falling off.

[0043] In one embodiment, the dielectric layer 130 is made of at least one of silicon dioxide, silicon nitride, and aluminum oxide. Specifically, silicon dioxide, silicon nitride, and aluminum oxide are all insulating materials with good adhesion to diamond, and when used as an insulating layer, they can also be used to adhere the metal layer 140. In some other embodiments, polycrystalline silicon, zinc oxide, or other insulating materials can also be selected as the dielectric layer 130.

[0044] In one embodiment, the material of the adhesive metal layer 140 is at least one of titanium and nickel. Specifically, the adhesive metal layer 140 needs to have good adhesion to the dielectric layer 130 and excellent conductivity. Titanium and nickel have high work functions, good adhesion, and can form good ohmic contacts with various materials, exhibiting low contact resistance when connected to the gold electrode 120. In some embodiments, gold can also be used as the material of the adhesive metal layer 140, as it also exhibits good adhesion when in contact with the dielectric layer 130.

[0045] In one embodiment, such as Figure 5 As shown, the diamond semiconductor device further includes a reinforcing metal layer 150, which is disposed on the adhesive metal layer 140 and serves as an electrode lead-out layer. Specifically, in this embodiment, a reinforcing metal layer 150 is further disposed on the adhesive metal layer 140 to thicken the overall metal layer. The reinforcing metal layer 150 serves as an electrode lead-out layer, which can improve the reliability of the lead-out electrode. In one embodiment, the material of the reinforcing metal layer 150 is at least one of aluminum and gold. It is understood that in the diamond semiconductor devices of the above embodiments, a reinforcing metal layer 150 can be disposed on the adhesive metal layer 140, which will not be described in detail here.

[0046] In one specific embodiment, such as Figure 6 As shown, in this embodiment of the diamond semiconductor device, the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120. The dielectric layer 130 covers a portion of the top surface of the gold electrode 120, and the interface between the adhesive metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesive metal layer 140 and the gold electrode 120. A reinforcing metal layer 150 is provided on the adhesive metal layer 140. With this arrangement, while the gold electrode 120 is reinforced by the limiting structure of the dielectric layer 130, the reinforcement capability of the gold electrode 120 can be further improved by increasing the contact area between the adhesive metal layer 140 and the dielectric layer 130 and by adding the reinforcing metal layer 150, thereby further reducing the occurrence of gold electrode 120 detachment.

[0047] In one embodiment, the thickness of the dielectric layer 130 is 10 nanometers to 100 nanometers, the thickness of the adhesive metal layer 140 is 10 nanometers to 50 nanometers, and the thickness of the reinforcing metal layer 150 is greater than 1 micrometer.

[0048] In one embodiment, the application also provides a method for manufacturing the diamond semiconductor device as described above.

[0049] In one embodiment, as shown, the method for manufacturing the diamond semiconductor device is applied to a semiconductor manufacturing system, which includes but is not limited to the following steps: Figure 7

[0050] Step S210, providing a device body.

[0051] Specifically, the semiconductor manufacturing system first provides a device body 110 which needs to be reinforced by the gold electrode 120. The device body 110 has completed the previous semiconductor manufacturing process and has already set the gold electrode 120 on the surface of the device body 110.

[0052] Step S220, forming a dielectric layer on the surface of the device body.

[0053] Specifically, the semiconductor manufacturing system can deposit a layer of dielectric on the surface of the device body 110 by chemical vapor deposition, and form a dielectric layer 130 with uniform thickness on the surface of the device body 110 by grinding and other processes. The formed dielectric layer 130 surrounds the gold electrode 120. In some embodiments, the material of the dielectric layer 130 is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0054] Step S230, opening a hole in the dielectric layer to expose the gold electrode.

[0055] Specifically, after forming the dielectric layer 130 on the surface of the device body 110, the semiconductor manufacturing system can open a hole in the dielectric layer 130 to expose the gold electrode 120 in the dielectric layer 130. For example, in the case where the thickness of the dielectric layer 130 needs to be greater than the thickness of the gold electrode 120, the semiconductor manufacturing system can open a hole in the dielectric layer 130 by photolithography, etching or etching to expose the gold electrode 120. It can be understood that by controlling the size of the opening, the top surface of the gold electrode 120 can be completely exposed, or only a part of the top surface of the gold electrode 120 is exposed. For example, in the case where the opening area is smaller than the top surface of the gold electrode 120, the dielectric layer 130 covers a part of the top surface of the gold electrode 120; in the case where the thickness of the dielectric layer 130 needs to be equal to the thickness of the gold electrode 120, the semiconductor manufacturing system can grind the dielectric layer 130 by mechanical grinding until the top surface of the gold electrode 120 is exposed.

[0056] Step S240, forming an adhesion metal layer on the dielectric layer and the gold electrode.

[0057] ​Specifically, after exposing the gold electrode 120 on the dielectric layer 130, the semiconductor manufacturing system can deposit an adhesive metal layer 140 on the dielectric layer 130 and the gold electrode 120 using thin film deposition processes such as chemical vapor deposition and physical vapor deposition. The resulting adhesive metal layer 140 connects the gold electrode 120 and the dielectric layer 130, and is used to lead out electrodes. It is understood that before depositing the adhesive metal layer 140, an auxiliary layer can be deposited to cover areas where the adhesive metal layer 140 does not need to be deposited, thereby controlling the shape of the deposited adhesive metal layer 140. In some embodiments, the interface between the adhesive metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesive metal layer 140 and the gold electrode 120. In some embodiments, the material of the adhesive metal layer 140 is at least one of titanium and nickel.

[0058] The above-described method for fabricating a diamond semiconductor device involves forming a dielectric layer 130 around a gold electrode 120 on the surface of the device body 110, and forming an adhesive metal layer 140 to connect the gold electrode 120 and the dielectric layer 130. The electrode is led out through the adhesive metal layer 140 and the gold electrode 120. Since the adhesion between the dielectric layer 130 and the device body 110 is strong, and the adhesion between the adhesive metal layer 140 and the dielectric layer 130 is also strong, the adhesive metal layer 140 can reinforce the gold electrode 120, reducing the possibility of the gold electrode 120 detaching during subsequent external packaging and interconnection.

[0059] In one embodiment, such as Figure 8 As shown, the fabrication method of diamond semiconductor devices also includes:

[0060] Step S250: A reinforcing metal layer is formed on the adhesive metal layer.

[0061] Specifically, in this embodiment, after forming the adhesive metal layer 140, a reinforcing metal layer 150 is formed on the adhesive metal layer 140. The reinforcing metal layer 150 is used to thicken the entire metal layer and is used for the lead-out electrode, which can improve the reliability of the lead-out electrode. In one embodiment, the material of the reinforcing metal layer 150 is at least one of aluminum and gold.

[0062] In one embodiment, the dielectric layer 130 formed by the method of fabricating a diamond semiconductor device has a thickness of 10 nanometers to 100 nanometers, the adhesive metal layer 140 has a thickness of 10 nanometers to 50 nanometers, and the reinforcing metal layer 150 has a thickness greater than 1 micrometer.

[0063] It should be understood that although the steps in the flowcharts involved in the embodiments described above are shown in sequence according to the arrows, the steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, the execution of the steps is not strictly limited in sequence, and the steps can be executed in other sequences. Moreover, at least some of the steps in the flowcharts involved in the embodiments described above can include multiple steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of the steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least part of other steps or steps or stages in other steps.

[0064] Based on the same inventive concept, the embodiments of the present application also provide a device for manufacturing a diamond semiconductor device. The device provides a solution to the problem similar to the implementation scheme described in the above method, so the specific limitations in one or more device for manufacturing a diamond semiconductor device embodiments provided below can refer to the limitations of the device for manufacturing a diamond semiconductor device described above, and will not be repeated here.

[0065] In one embodiment, as shown in Figure 9 A device for manufacturing a diamond semiconductor device is provided, comprising: a device providing module 310, a medium layer forming module 320, a medium layer opening module 330 and a metal layer forming module 340, wherein:

[0066] The device providing module 310 is configured to provide a device body 110, wherein the surface of the device body 110 is provided with a gold electrode 120;

[0067] The medium layer forming module 320 is configured to form a medium layer 130 on the surface of the device body 110, wherein the medium layer 130 surrounds the gold electrode 120;

[0068] The medium layer opening module 330 is configured to open a hole in the medium layer 130 to expose the gold electrode 120;

[0069] The metal layer forming module 340 is configured to form an adhesion metal layer 140 on the medium layer 130 and the gold electrode 120, wherein the adhesion metal layer 140 is connected to the gold electrode 120 and the medium layer 130 respectively, and the adhesion metal layer 140 is used to lead out the electrode.

[0070] In one embodiment, the metal layer forming module 340 is further configured to form a reinforcing metal layer 150 on the adhesion metal layer 140, wherein the reinforcing metal layer 150 is used to lead out the electrode.

[0071] In one embodiment, the thickness of the dielectric layer 130 is greater than the thickness of the gold electrode 120, and the dielectric layer 130 covers a portion of the top surface of the gold electrode 120.

[0072] In one embodiment, the interface between the adhesion metal layer 140 and the dielectric layer 130 completely surrounds the interface between the adhesion metal layer 140 and the gold electrode 120.

[0073] In one embodiment, the material of the dielectric layer 130 is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0074] In one embodiment, the material of the adhesion metal layer 140 is at least one of titanium and nickel.

[0075] In one embodiment, the reinforcement metal layer 150 is disposed on the adhesion metal layer 140, and the reinforcement metal layer 150 is used for a lead electrode.

[0076] In one embodiment, the material of the reinforcement metal layer 150 is at least one of aluminum and gold.

[0077] In one embodiment, the thickness of the dielectric layer 130 is 10 nanometers to 100 nanometers, the thickness of the adhesion metal layer 140 is 10 nanometers to 50 nanometers, and the thickness of the reinforcement metal layer 150 is greater than 1 micrometer.

[0078] The above-mentioned modules in the device for manufacturing the diamond semiconductor device can be realized by software, hardware, and combinations thereof, in whole or in part. The above-mentioned modules can be embedded in or independent of a processor in a computer device in hardware form, or stored in a memory in a computer device in software form, so as to be called and executed by a processor to perform operations corresponding to the above-mentioned modules.

[0079] In the description of the present specification, the description of the terms “one embodiment”, “some embodiments”, “a specific embodiment”, and the like means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above-mentioned terms does not necessarily mean the same embodiment or example.

[0080] The technical features of the above-mentioned embodiments can be combined in any manner. In order to make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described, however, as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present specification.

[0081] The above embodiments only express several implementation ways of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation to the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A diamond semiconductor device, characterized in that, include: Device body; Gold electrodes are disposed on the surface of the device body; A dielectric layer is disposed on the surface of the device body and surrounds the gold electrode; the thickness of the dielectric layer is greater than the thickness of the gold electrode, and the dielectric layer covers a portion of the top surface of the gold electrode; An adhesive metal layer is provided, which connects the gold electrode and the dielectric layer respectively, and is used to lead out the electrode; the material of the adhesive metal layer is at least one of titanium and nickel; A reinforcing metal layer is disposed on the adhesive metal layer and is used to lead out electrodes; the material of the reinforcing metal layer is at least one of aluminum and gold.

2. The diamond semiconductor device according to claim 1, characterized in that, The interface between the adhesive metal layer and the dielectric layer completely surrounds the interface between the adhesive metal layer and the gold electrode.

3. The diamond semiconductor device according to claim 1, characterized in that, The material of the dielectric layer is at least one of silicon dioxide, silicon nitride, and aluminum oxide.

4. The diamond semiconductor device according to claim 1, characterized in that, The thickness of the dielectric layer is 10 nanometers to 100 nanometers, the thickness of the adhesive metal layer is 10 nanometers to 50 nanometers, and the thickness of the reinforcing metal layer is greater than 1 micrometer.

5. A method for fabricating a diamond semiconductor device, characterized in that, The method for preparing the diamond semiconductor device according to any one of claims 1 to 4 comprises: A device body is provided; wherein, gold electrodes are disposed on the surface of the device body; A dielectric layer is formed on the surface of the device body; wherein the dielectric layer surrounds the gold electrode; An opening is made in the dielectric layer to expose the gold electrode; An adhesive metal layer is formed on the dielectric layer and the gold electrode; wherein the adhesive metal layer connects the gold electrode and the dielectric layer respectively, and the adhesive metal layer is used to lead out the electrode.

6. The method for fabricating a diamond semiconductor device according to claim 5, characterized in that, The method further includes: A reinforcing metal layer is formed on the adhesive metal layer; wherein the reinforcing metal layer is used to lead out electrodes.

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