Machining system

Abstract

A processing system according to the present invention is provided with: a processing device capable of performing a removal process for removing a portion of an object by irradiating the object with an energy beam; and a control device that controls the processing device so as to remove the target processing portion in the removal processing. The control device controls the processing device to execute a first operation for removing at least a portion of a first portion of the target processing portion by irradiating the first portion with an energy beam of a first flux, and a second operation for removing at least a portion of the first portion by irradiating the first portion with an energy beam of a second flux. A second operation of removing at least a portion of a second portion of the target processing portion by irradiating the second portion with an energy beam of a second flux lower than the first flux; the first portion is adjacent to the second portion in a first direction intersecting a traveling direction of the energy beam.

Description

Technical Field

[0001] The present invention relates to the technical field of a processing system and a processing method capable of processing an object using an energy beam. Background Art

[0002] Patent Document 1 describes a processing system for processing an object by irradiating the object with laser light, which is an example of an energy beam. This processing system is required to process the object appropriately.

[0003] Background Art Literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application No. 4,427,872 Summary of the invention

[0006] According to a first aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of an object by irradiating an energy beam to the object; and a control device, which controls the processing device to remove a target processing portion in the removal processing; and the control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of a first portion in the target processing portion by irradiating the energy beam with a first flux to the first portion, and the second action is to remove at least a portion of the second portion in the target processing portion by irradiating the energy beam with a second flux lower than the first flux to the second portion; the first portion is adjacent to the second portion along a first direction intersecting the direction of travel of the energy beam.

[0007] According to a second aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of the object by irradiating an energy beam to the object; and a control device, which controls the processing device to remove a target processing portion in the removal processing; and the control device is capable of switching between a first mode and a second mode, the first mode being performed in a state where the removal processing of a portion of the target processing portion adjacent to the non-target processing portion is performed with the center of the beam spot of the energy beam located on the surface of the object at the boundary between the target processing portion and the non-target processing portion, the non-target processing portion being adjacent to the target processing portion, and the second mode being performed in a state where the removal processing of a portion of the target processing portion adjacent to the non-target processing portion is performed with the center of the beam spot of the energy beam located on the surface of the object away from the boundary and on the inner side of the target processing portion.

[0008] According to a third aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of the object by irradiating the object with an energy beam; and a control device, which controls the processing device to remove a target processing portion in the removal processing; and the control device performs the removal processing in a state in which the center of the beam spot of the energy beam is located on the surface of the object only on the inner side of the target processing portion away from the boundary between the target processing portion and the non-target processing portion.

[0009] According to a fourth aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of the object by irradiating the object with an energy beam; an acquisition unit, which acquires processing data related to a target processing portion in the removal processing, and information related to the energy beam; a calculation unit, which changes the processing data based on the information related to the energy beam and outputs the changed processing data; and a control device, which controls the processing device to remove a portion of the object based on the changed processing data; and the removal processing is performed in a state where the center of the beam spot of the energy beam is located only on the inner side of the target processing portion.

[0010] According to the fifth aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of the object by irradiating an energy beam to the object; and a control device, which controls the processing device to remove a target processing portion in the removal processing; and the control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of a first portion of the target processing portion by irradiating the energy beam to the first portion under a first condition, and the second action is to remove at least a portion of the second portion of the target processing portion by irradiating the energy beam to the second portion under a second condition different from the first condition; the first portion is adjacent to the second portion.

[0011] According to the sixth aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein a portion of an object is removed by irradiating an energy beam to the object; and a control device, which controls the processing device to remove a target processing portion in the removal processing; and the center of the energy beam is located only on the inner side of the target processing portion.

[0012] According to the seventh aspect, a processing system is provided, comprising: a processing device capable of performing removal processing, wherein the removal processing removes a portion of the object by irradiating an energy beam to the object; an acquisition unit, which acquires changed processing data obtained by changing processing data related to a target processing portion in the removal processing; and a control device, which controls the processing device to remove a portion of the object based on the changed processing data; and the center of the energy beam is located only on the inner side of the target processing portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a perspective view schematically showing the appearance of the processing system according to the present embodiment.

[0014] Figure 2 It is a block diagram showing the configuration of the processing system according to the present embodiment.

[0015] Figure 3 It is a cross-sectional view showing the structure of the irradiation optical system.

[0016] Figure 4 (a) to Figure 4 (d) are cross-sectional views showing the removal process performed on the workpiece.

[0017] Figure 5 (a) is a cross-sectional view showing a workpiece where the target processing portion has not been removed and a workpiece where the target processing portion has been removed. Figure 5 (b) is a plan view showing a workpiece from which the target processing portion has not been removed and a workpiece from which the target processing portion has been removed.

[0018] Figure 6 It is a cross-sectional view showing an enlarged wall portion (wall surface).

[0019] Figure 7 It is a cross-sectional view showing an enlarged wall portion (wall surface).

[0020] Figure 8 (a) is a cross-sectional view showing an example of a first portion and a second portion of a target processing portion, Figure 8 (b) is a plan view showing an example of the first part and the second part of the target processing part.

[0021] Fig. 9 It is a graph showing the flux of processing light.

[0022] Fig.10 (a) is a cross-sectional view showing the processing light incident on the surface of the workpiece at a first incident angle, Fig.10 (b) is a cross-sectional view showing the processing light incident on the surface of the workpiece at a second incident angle larger than the first incident angle.

[0023] Fig.11 This is a graph showing the intensity of the processing light emitted from the processing light source.

[0024] Fig.12 This is a graph showing the size of the beam spot of the processing light.

[0025] Fig.13 It is a cross-sectional view showing the workpiece after the first removing processing operation is performed.

[0026] Fig.14 It means to continue Fig.13 A cross-sectional view of a workpiece after a second removal machining action has been performed following the first removal machining action shown.

[0027] Fig.15 It means to continue Fig.14 A cross-sectional view of a workpiece after a first removal machining action has been performed is shown, following a second removal machining action.

[0028] Fig.16 It means to continue Fig.15 A cross-sectional view of a workpiece after a second removal machining action has been performed following the first removal machining action shown.

[0029] Fig.17 It is a plan view showing the movement trajectory of the irradiation position of the processing light formed by the first removal processing operation.

[0030] Fig.18 (a) and Fig.18 (b) are cross-sectional views showing the workpiece after the removal process has been performed.

[0031] Fig.19 It is a cross-sectional view showing an example of a first portion, a second portion, and a third portion of a target processing portion.

[0032] Fig. 20 (a) and Fig. 20 (b) are cross-sectional views showing the workpiece after the removal process has been performed.

[0033] Fig.21 This is a cross-sectional view of a workpiece with excess material attached to the exposed surface.

[0034] Fig. 22 is a cross-sectional view showing an example of the positional relationship between the boundary and the beam spot in the first mode.

[0035] Fig.23 is a cross-sectional view showing an example of the positional relationship between the boundary and the beam spot in the second mode.

[0036] Fig.24This is a block diagram showing an example of the configuration of a processing system in a third variation.

[0037] Fig.25 (a) is a cross-sectional view showing a workpiece processed by the processing system of the first mode, Fig.25 (b) is a cross-sectional view showing the workpiece after being processed by the processing system of the second mode. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of a processing system and a processing method will be described with reference to the accompanying drawings. Hereinafter, embodiments of a processing system and a processing method will be described using a processing system SYS that uses processing light EL as a specific example of an energy beam to process a workpiece W as a specific example of an object. However, the present invention is not limited to the embodiments described below.

[0039] In addition, in the following description, an XYZ orthogonal coordinate system defined by mutually orthogonal X-axis, Y-axis and Z-axis is used to explain the positional relationship of various components constituting the processing system SYS. In addition, in the following description, for the convenience of explanation, the X-axis direction and the Y-axis direction are respectively set as horizontal directions (i.e., predetermined directions in the horizontal plane), and the Z-axis direction is set as a vertical direction (i.e., a direction orthogonal to the horizontal plane, which is actually an up-and-down direction). In addition, the rotation directions (in other words, the tilting directions) around the X-axis, Y-axis and Z-axis are respectively referred to as the θX direction, the θY direction and the θZ direction. Here, the Z-axis direction can also be set as the gravity direction. In addition, the XY plane can also be set as the horizontal direction.

[0040] (1) Configuration of the machining system SYS

[0041] First, refer to Figure 1 and Figure 2 The configuration of the machining system SYS according to the present embodiment will be described. Figure 1 It is a perspective view schematically showing the appearance of the processing system SYS according to the present embodiment. Figure 2 It is a block diagram showing the configuration of the machining system SYS according to the present embodiment.

[0042] like Figure 1 and Figure 2 As shown, the machining system SYS includes a machining unit 1, a measuring unit 2, a platform unit 3, and a control unit 4. In addition, the machining unit 1 can also be called a machining device. The measuring unit 2 can also be called a measuring device. The platform unit 3 can also be called a platform device. The control unit 4 can also be called a control device.

[0043] The processing unit 1, the measuring unit 2 and the platform unit 3 are accommodated in the internal space of the shell 5. The internal space of the shell 5 may be flushed with a flushing gas (i.e., gas) such as nitrogen, or may not be flushed with a flushing gas. The flushing gas may be an inert gas. The internal space of the shell 5 may be evacuated or not. However, at least a part of the processing unit 1, the measuring unit 2 and the platform unit 3 may not be accommodated in the shell 5. The processing system SYS may not have the shell 5 that accommodates the processing unit 1, the measuring unit 2 and the platform unit 3. In addition, only the environment around the workpiece W or the environment around the platform unit 3 may be flushed with a flushing gas.

[0044] The processing unit 1 can process the workpiece W under the control of the control unit 4. The workpiece W can be, for example, metal, alloy (such as duralumin, etc.), semiconductor (such as silicon), resin, composite materials such as CFRP (Carbon Fiber Reinforced Plastic, carbon fiber reinforced composite material), coating (such as a coating layer applied to a substrate), ceramic or glass, or other objects made of any material.

[0045] The machining unit 1 irradiates the workpiece W with machining light EL in order to machine the workpiece W. The machining light EL may be any type of light as long as it can machine the workpiece W after being irradiated thereon. In the present embodiment, an example in which the machining light EL is a laser is used for illustration, but the machining light EL may be a type of light different from the laser. Furthermore, the wavelength of the machining light EL may be any wavelength as long as it can machine the workpiece W after being irradiated thereon. For example, the machining light EL may be visible light or invisible light (for example, at least one of infrared light, ultraviolet light, and extreme ultraviolet light). The machining light EL may include pulsed light. Alternatively, the machining light EL may not include pulsed light. In other words, the machining light EL may also be continuous light.

[0046] The processing unit 1 performs a removal process on the workpiece W. That is, the processing unit 1 performs a removal process to remove a part of the workpiece W. In addition, the processing unit 1 may also perform a process different from the removal process on the workpiece W. For example, the processing unit 1 may perform an additional process on the workpiece W. That is, the processing unit 1 may perform an additional process to form a shape on the workpiece W. The processing unit 1 may also perform a marking process to form a desired mark on the surface of the workpiece W. The processing unit 1 may also perform a shot peening process to change the surface characteristics of the workpiece W. The processing unit 1 may also perform a stripping process to strip the surface of the workpiece W. The processing unit 1 may also perform a welding process to join one workpiece W to another workpiece W. The processing unit 1 may also perform a cutting process to cut the workpiece W. The processing unit 1 may also perform a plane process (in other words, a remelting process) to make the surface of the workpiece W close to a plane by melting the surface of the workpiece W and solidifying the molten surface.

[0047] In order to perform a removal process on the workpiece W, the machining unit 1 includes a machining light source 11 , a machining head 12 , and a head driving system 13 .

[0048] The processing light source 11 generates processing light EL. When the processing light EL is a laser, the processing light source 11 may include, for example, a laser diode. Furthermore, the processing light source 11 may be a light source capable of pulse oscillation. In this case, the processing light source 11 may generate pulse light as the processing light EL. In addition, the processing light source 11 may also be a CW (Continuous Wave) light source that generates CW.

[0049] Under the control of the control unit 4, the processing head 12 irradiates the processing light EL emitted by the processing light source 11 onto the workpiece W, thereby processing the workpiece W. The processing head 12 performs removal processing on the workpiece W placed on the platform 32 described below. In this case, the processing head 12 can be arranged above the platform 32 for placing the workpiece W. For example, the processing head 12 can be installed on a grid-shaped support frame 6 arranged on a fixed plate 31 provided in the platform unit 3. The support frame 6 can include a pair of support leg parts 61 protruding from the fixed plate 31 along the Z-axis direction, and a beam part 62 connecting the pair of support leg parts 61 via the upper ends of the pair of support leg parts 61. The beam part 62 can be arranged above the platform 32. The processing head 12 can also be installed on the beam part 62. In addition, Figure 1In the example shown, the processing head 12 is mounted on the beam member 62 via the head driving system 13 described below. When the processing head 12 is arranged above the platform 32, the processing head 12 can emit the processing light EL downward from the processing head 12, thereby irradiating the processing light EL to the workpiece W. That is, the processing head 12 can emit the processing light EL traveling along the Z-axis direction, thereby irradiating the processing light EL traveling along the Z-axis direction to the workpiece W. The processing head 12 can also emit the processing light EL with the Z-axis direction as the traveling direction, thereby irradiating the processing light EL with the Z-axis direction as the traveling direction to the workpiece W.

[0050] The machining head 12 includes an irradiation optical system 121 in order to irradiate the workpiece W with the machining light EL. Figure 3 The irradiation optical system 121 will be described. Figure 3 It is a perspective view showing the structure of the irradiation optical system 121 .

[0051] like Figure 3 As shown, the irradiation optical system 121 may include, for example, a focus changing optical system 1211 , a galvanometer mirror 1212 , and an fθ lens 1213 .

[0052] The focus changing optical system 1211 is an optical component capable of changing the focus position of the processing light EL (i.e., the convergence position of the processing light EL) along the traveling direction of the processing light EL. The focus changing optical system 1211 may include, for example, a plurality of lenses arranged along the traveling direction of the processing light EL. In this case, the focus position of the processing light EL can be changed by moving at least one of the plurality of lenses along its optical axis direction.

[0053] The focus changing optical system 1211 may also change the size (e.g., diameter) of the beam spot BS formed by the processing light EL on the surface of the workpiece W by changing the focus position of the processing light EL on the surface of the workpiece W. In this case, it can be considered that the focus changing optical system 1211 functions as an optical system capable of changing the size of the beam spot BS of the processing light EL.

[0054] The processing light EL passing through the focus changing optical system 1211 is incident on the galvanometer mirror 1212. The galvanometer mirror 1212 changes the emission direction of the processing light EL from the galvanometer mirror 1212 by deflecting the processing light EL (that is, changing the emission angle of the processing light EL). If the emission direction of the processing light EL from the galvanometer mirror 1212 is changed, the position where the processing light EL is emitted from the processing head 12 is changed. If the position where the processing light EL is emitted from the processing head 12 is changed, the position of the target irradiation area EA irradiated by the processing light EL on the surface of the workpiece W is changed. That is, the irradiation position of the processing light EL on the surface of the workpiece W is changed.

[0055] The galvanometer mirror 1212 includes, for example, an X scanning mirror 1212X and a Y scanning mirror 1212Y. Both the X scanning mirror 1212X and the Y scanning mirror 1212Y are variable inclination mirrors whose angles with respect to the optical path of the processing light EL incident on each mirror can be changed. The X scanning mirror 1212X reflects the processing light EL toward the Y scanning mirror 1212Y. The X scanning mirror 1212X can swing or rotate around a rotation axis along the Y axis. By swinging or rotating the X scanning mirror 1212X, the processing light EL scans the surface of the workpiece W along the X axis direction. By swinging or rotating the X scanning mirror 1212X, the target irradiation area EA moves along the X axis direction on the surface of the workpiece W. The Y scanning mirror 1212Y reflects the processing light EL toward the fθ lens 1213. The Y scanning mirror 1212Y can swing or rotate around a rotation axis along the X axis. By swinging or rotating the Y scanning mirror 1212Y, the processing light EL scans the surface of the workpiece W along the Y axis direction. The target irradiation area EA moves on the surface of the workpiece W along the Y-axis direction through the swing or rotation of the Y scanning mirror 1212Y.

[0056] Through the galvanometer mirror 1212, the processing light EL can scan or sweep the processing area PSA determined based on the processing head 12. That is, through the galvanometer mirror 1212, the target irradiation area EA can move within the processing area PSA determined based on the processing head 12. In addition, the processing area PSA represents the area (in other words, the range) where the processing head 12 performs removal processing in a state where the positional relationship between the processing head 12 and the workpiece W is fixed (i.e., does not change). Typically, the processing area PSA is set to an area that is consistent with the scanning range of the processing light EL deflected by the galvanometer mirror 1212 in a state where the positional relationship between the processing head 12 and the workpiece W is fixed, or a smaller area than the scanning range. Furthermore, by moving the processing head 12 using the head drive system 13 described below, and / or by moving the stage 32 using the stage drive system 33 described below, the processing area PSA (target irradiation area EA) can be relatively moved on the surface of the workpiece W.

[0057] Furthermore, the operation of changing the irradiation position of the processing light EL on the surface of the workpiece W using the galvanometer mirror 1212 can be regarded as the operation of changing the positional relationship between the irradiation position of the processing light EL on the surface of the workpiece W and the workpiece W. In this case, the galvanometer mirror 1212 can also be called a position changing device.

[0058] The fθ lens 1213 is an optical system for emitting the processing light EL from the galvanometer mirror 1212 toward the workpiece W. In particular, the fθ lens 1213 is an optical element for focusing the processing light EL from the galvanometer mirror 1212 on a focusing surface. Therefore, the fθ lens 1213 may also be referred to as a focusing optical system or an object optical system. The focusing surface of the fθ lens 1213 may be set to, for example, the surface of the workpiece W. In addition, the focusing surface of the fθ lens 1213 may also be set to a surface separated from the surface of the workpiece W in the direction along the optical axis EX of the fθ lens 1213.

[0059] In addition, at least one of the X scanning mirror 1212X and the Y scanning mirror 1212Y constituting the galvanometer mirror 1212 may be arranged at the entrance pupil position of the fθ lens 1213 as a condensing optical system (object optical system). At least one of the X scanning mirror 1212X and the Y scanning mirror 1212Y may be arranged at a conjugate position of the entrance pupil position of the fθ lens 1213 as a condensing optical system (object optical system). When there are a plurality of scanning mirrors constituting the galvanometer mirror 1212, a relay optical system for making the scanning mirrors optically conjugate with each other may be arranged between the scanning mirrors.

[0060] Refer again Figure 1 and Figure 2 Under the control of the control unit 4, the head driving system 13 moves the processing head 12 along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. Figure 1 An example is shown in which the head driving system 13 moves the processing head 12 along the Z-axis direction. In this case, the head driving system 13 may include, for example, a Z sliding member 131 extending along the Z-axis direction. The Z sliding member 131 is disposed on the support frame 6 disposed on the fixed plate 31 via an anti-vibration device. The Z sliding member 131 is disposed on the beam member 62 via, for example, a support member 63 extending along the Z-axis direction. The processing head 12 is connected to the Z sliding member 131, and the processing head 12 can move along the Z sliding member 131.

[0061] If the machining head 12 moves, the positional relationship between the machining head 12 and the platform 32 described below changes. Furthermore, if the machining head 12 moves, the positional relationship between the machining head 12 and the workpiece W placed on the platform 32 changes. Therefore, moving the machining head 12 can also be regarded as changing the positional relationship between the machining head 12, the platform 32, and the workpiece W. In addition, if the machining head 12 moves, the target irradiation area EA and the processing area PSA irradiated by the machining light EL on the surface of the workpiece W move relative to the surface of the workpiece W. That is, the irradiation position of the machining light EL on the surface of the workpiece W changes.

[0062] Furthermore, the operation of changing the irradiation position of the processing light EL on the surface of the workpiece W using the head driving system 13 can be regarded as the operation of changing the positional relationship between the irradiation position of the processing light EL on the surface of the workpiece W and the workpiece W. In this case, the head driving system 13 can also be called a position changing device.

[0063] The measuring unit 2 can measure the measured object under the control of the control unit 4. The measured object can include a workpiece W. Specifically, the measured object can include at least one of a workpiece W that has not been removed by the processing unit 1, a workpiece W that is being removed by the processing unit 1, and a workpiece W that has been removed by the processing unit 1. The measured object can also include a platform 32 that can carry the workpiece W. The measured object can also include any object carried on the platform 32.

[0064] The measurement unit 2 includes a measurement head 21 and a head driving system 22 in order to measure a measurement object.

[0065] The measuring head 21 can measure (in other words, measure) the object to be measured under the control of the control unit 4. Specifically, the measuring head 21 can measure any characteristic of the object to be measured. As an example of the characteristic of the object to be measured, the position of the object to be measured can be cited. As another example of the characteristic of the object to be measured, the shape of the object to be measured (e.g., a two-dimensional shape or a three-dimensional shape) can be cited. As yet another example of the characteristic of the object to be measured, at least one of the reflectivity of the object to be measured, the transmittance of the object to be measured, and the surface roughness of the object to be measured can be cited.

[0066] The measuring head 21 can measure the object to be measured by any measuring method. For example, the measuring head 21 can measure the object to be measured optically, electrically, magnetically, physically, chemically or thermally. The measuring head 21 can measure the object to be measured without contacting the object to be measured. The measuring head 21 can also measure the object to be measured by contacting the object to be measured.

[0067] In this embodiment, an example is described in which the measuring head 21 optically measures the measuring object by irradiating the measuring light ML onto the measuring object without contacting the measuring object. For example, the measuring head 21 can measure the measuring object by using the light sectioning method, which is to project the measuring light ML as slit light onto the surface of the measuring object and measure the shape of the projected slit light. For example, the measuring head 21 can also measure the measuring object by using the white interference method, which is to measure the interference pattern between the white light that has passed through the measuring object, that is, the measuring light ML, and the white light that has not passed through the measuring object. For example, the measuring head 21 can also measure the measuring object by using the pattern projection method, which is to project the measuring light ML that draws a light pattern onto the surface of the measuring object and measure the shape of the projected pattern, or the time of flight method, which is to perform the action of projecting the measuring light ML onto the surface of the measuring object at multiple positions on the measuring object and measuring the distance from the measuring object based on the time taken for the projected measuring light ML to return. The measuring head 21 can also use at least one of the Moire topography method (specifically grating irradiation method or grating projection method), holography interference method, autocollimation method, stereo method, astigmatism method, critical angle method, knife-edge method, interferometry method and confocal method to measure the measurement object.

[0068] The measuring head 21 may be arranged above the platform 32 on which the workpiece W is placed. Specifically, the measuring head 21 may be mounted on the beam member 62 similarly to the machining head 12. Figure 1 In the example shown, the measuring head 21 is mounted on the beam member 62 via the head driving system 22. However, the measuring head 21 may be mounted on a beam member different from the beam member 62 on which the processing head 12 is mounted. When the measuring head 21 is arranged above the platform 32, the measuring head 21 can measure the workpiece W from above the workpiece W. The measuring head 21 can also measure the platform 32 from above the platform 32. When the measuring head 21 is arranged above the platform 32, the measuring head 21 can emit the measuring light ML downward from the measuring head 21, thereby irradiating the measuring light ML to the workpiece W. That is, the measuring head 21 can emit the measuring light ML traveling along the Z-axis direction, thereby irradiating the measuring light ML traveling along the Z-axis direction to the workpiece W. The measuring head 21 can also emit the measuring light ML traveling in the Z-axis direction, thereby irradiating the measuring light ML traveling in the Z-axis direction to the workpiece W.

[0069] In addition, the measuring head 21 may include a plurality of measuring instruments, each of which can measure the measuring object. The plurality of measuring instruments may include at least two measuring instruments with different measurement resolutions (in other words, different measurement accuracies). The plurality of measuring instruments may also include at least two measuring instruments with different measurement areas. In addition, the plurality of measuring instruments may also include two measuring instruments with different measurement principles.

[0070] The head driving system 22 moves the measuring head 21 in at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction under the control of the control unit 4 . Figure 1 An example is shown in which the head driving system 22 moves the measuring head 21 along the Z-axis direction. In this case, the head driving system 22 may include, for example, a Z sliding member 221 extending along the Z-axis direction. The Z sliding member 221 is disposed on the support frame 6 disposed on the fixed plate 31 via an anti-vibration device. The Z sliding member 221 is disposed on the beam member 62 via, for example, a support member 64 extending along the Z-axis direction. The measuring head 21 is connected to the Z sliding member 221, and the measuring head 21 can move along the Z sliding member 221.

[0071] If the measuring head 21 moves, the positional relationship between the measuring head 21 and the platform 32 described below changes. Furthermore, if the measuring head 21 moves, the positional relationship between the measuring head 21 and the workpiece W placed on the platform 32 changes. Therefore, moving the measuring head 21 can also be regarded as changing the positional relationship between the measuring head 21, the platform 32, and the workpiece W.

[0072] Furthermore, the machining head 12 may include a measuring device capable of measuring the measurement object in addition to or instead of the measuring head 21 .

[0073] The platform unit 3 includes a base plate 31 , a platform 32 , and a platform driving system 33 .

[0074] The fixed plate 31 is arranged on the bottom surface of the shell 5 (or on a supporting surface such as the ground on which the shell 5 is placed). The platform 32 is arranged on the fixed plate 31. An anti-vibration device (not shown) for reducing the transmission of vibration of the fixed plate 31 to the platform 32 may be provided between the bottom surface of the shell 5 or the supporting surface such as the ground on which the shell 5 is placed and the fixed plate 31. Furthermore, the supporting frame 6 may be arranged on the fixed plate 31. In addition, a support leg member may be provided between the fixed plate 31 and the bottom surface of the shell 5 (or on a supporting surface such as the ground on which the shell 5 is placed). In this case, an anti-vibration device may be provided between the support leg member and the fixed plate 31, and / or between the support leg member and the bottom surface (or the supporting surface).

[0075] The platform 32 is a loading device for loading the workpiece W. The platform 32 may be capable of holding the workpiece W loaded on the platform 32. In this case, the platform 32 may include at least one of a mechanical chuck, an electrostatic chuck, and a vacuum adsorption chuck in order to hold the workpiece W. Alternatively, the platform 32 may not be capable of holding the workpiece W loaded on the platform 32. In this case, the workpiece W may be loaded on the platform 32 without a fixture.

[0076] The platform driving system 33 moves the platform 32 under the control of the control unit 4. For example, the platform driving system 33 can move the platform 32 along at least one of the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction under the control of the control unit 4.

[0077] Figure 1 In the example shown, the platform drive system 33 moves the platform 32 along the X-axis and the Y-axis respectively. Figure 1 In the example shown, the stage driving system 33 moves the stage 32 in the direction along the XY plane intersecting the traveling directions of the processing light EL and the measuring light ML. In this case, the stage driving system 33 may include, for example, an X slide member 331 extending in the X-axis direction ( Figure 1 In the example shown, two X slide members 331 are arranged parallel to each other, and a Y slide member 332 ( Figure 1 In the example shown, there is one Y sliding member 332. Two X sliding members 331 are arranged on the fixed plate 31 in a manner of being arranged along the Y axis direction. The Y sliding member 332 is connected to the two X sliding members 331 in a manner of being movable along the two X sliding members 331. The platform 32 is connected to the Y sliding member 332 in a manner of being movable along the Y sliding member 332. In addition, the platform 32 can also be suspended and supported on the fixed plate 31 using an air bearing.

[0078] When the stage driving system 33 moves the stage 32, the positional relationships between the machining head 12 and the measuring head 21 and the stage 32 and the workpiece W change. Furthermore, when the stage driving system 33 moves the stage 32, the stage 32 and the workpiece W move relative to the machining area PSA for the machining head 12 to perform the removal machining and the measuring area for the measuring head 21 to perform the measurement, respectively.

[0079] The control unit 4 controls the operation of the machining system SYS. As an example, the control unit 4 may control the machining unit 1 and the platform unit 3 based on machining control data used to control the machining system SYS to machine the workpiece W. The machining control data may include machining path data. The machining path data may represent the relative movement trajectory of the target irradiation area EA of the machining light EL on the surface of the workpiece W relative to the surface of the workpiece W. That is, the machining path data may represent the relative movement trajectory (the so-called machining path) of the irradiation position of the machining light EL on the surface of the workpiece W relative to the surface of the workpiece W. As another example, the control unit 4 may also control the measuring unit 2 and the platform unit 3 based on the measurement control data used to control the machining system SYS to measure the measurement object.

[0080] The control unit 4 may include, for example, a computing device and a storage device. The computing device may include, for example, at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage device may include, for example, a memory. The control unit 4 functions as a device for controlling the actions of the machining system SYS by executing a computer program by the computing device. The computer program is a computer program for enabling the control unit 4 (e.g., computing device) to perform (i.e., execute) the following actions that the control unit 4 should perform. That is, the computer program is a computer program for enabling the control unit 4 to function so that the machining system SYS performs the following actions. The computer program executed by the computing device may be recorded in a storage device (i.e., a recording medium) possessed by the control unit 4, or may be recorded in any storage medium (e.g., a hard disk or a semiconductor memory) that is built into the control unit 4 or can be externally mounted on the control unit 4. Alternatively, the computing device may also download the computer program to be executed from an external device of the control unit 4 via a network interface.

[0081] The control unit 4 may not be arranged inside the processing system SYS. For example, the control unit 4 may also be arranged outside the processing system SYS as a server or the like. For example, the control unit 4 may be arranged as a computer (such as a laptop) that can be connected to the processing system SYS. For example, the control unit 4 may also be arranged as a computer (such as a laptop) that is arranged near the processing system SYS. In this case, the control unit 4 and the processing system SYS may be connected via a wired and / or wireless network (or a data bus and / or a communication line). As a wired network, for example, a network using a serial bus interface represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485 and USB may be used. As a wired network, a network using a parallel bus interface may also be used. As a wired network, a network using an Ethernet (registered trademark) standard interface represented by at least one of 10BASE-T, 100BASE-TX and 1000BASE-T may also be used. As a wireless network, a network using radio waves may be used. As an example of a network using radio waves, a network of the IEEE802.1x standard (such as at least one of a wireless LAN and Bluetooth (registered trademark)) can be cited. As a wireless network, a network using infrared rays can also be used. As a wireless network, a network using optical communication can also be used. In this case, the control unit 4 and the processing system SYS can be configured in a manner that can send and receive various information via the network. In addition, the control unit 4 can also be able to send information such as instructions and control parameters to the processing system SYS via the network. The processing system SYS can have a receiving device that receives information such as instructions and control parameters from the control unit 4 via the network. Alternatively, a first control unit that executes a part of the processing performed by the control unit 4 may be arranged inside the processing system SYS, and a second control unit that executes another part of the processing performed by the control unit 4 may be arranged outside the processing system SYS.

[0082] The control unit 4 may be installed with a computing model that can be built by machine learning by executing a computer program through a computing device. As an example of a computing model that can be built by machine learning, for example, a computing model including a neural network (so-called artificial intelligence (AI)) can be cited. In this case, the learning of the computing model may include the learning of neural network parameters (for example, at least one of weights and biases). The control unit 4 may use the computing model to control the action of the processing system SYS. That is, the action of controlling the action of the processing system SYS may include the action of controlling the action of the processing system SYS using the computing model. In addition, the control unit 4 may also be installed with a computing model built by online machine learning using teaching data. In addition, the computing model installed in the control unit 4 can be updated on the control unit 4 by online machine learning. Alternatively, the control unit 4 may also use a computing model installed in a device outside the control unit 4 (i.e., a device provided outside the processing system SYS) in addition to or instead of the computing model installed in the control unit 4 to control the action of the processing system SYS.

[0083] In addition, as a recording medium for recording the computer program executed by the computing device, at least one of CD-ROM, CD-R, CD-RW, floppy disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW and Blu-ray (registered trademark) and other optical disks, magnetic media such as magnetic tapes, magneto-optical disks, semiconductor memories such as USB memories, and other arbitrary media capable of storing programs can be used. The recording medium may also include a device capable of recording a computer program (for example, a general-purpose device or a special-purpose device in which the computer program is installed so that it can be executed in the form of at least one of software and firmware, etc.). Furthermore, each process and function included in the computer program can be achieved by a logic processing block implemented in the control unit 4 by executing the computer program by the control unit 4 (i.e., the computer), or by a predetermined gate array (FPGA (Field Programmable Gate Array, Field Programmable Gate Array, ASIC (Application Specific Integrated Circuit)) and other hardware possessed by the control unit 4, or by a mixed existence of a logic processing block and a part of the hardware modules that implement some elements of the hardware.

[0084] (2) Processing of workpiece W by processing system SYS

[0085] Next, processing of the workpiece W by the processing system SYS will be described.

[0086] (2-1) Overview of removal processing

[0087] As described above, the machining system SYS performs a removal machining process of removing a portion of the workpiece W by irradiating the machining light EL to the workpiece W. Therefore, first, referring to Figure 4 (a) to Figure 4 (c) describes an overview of removal processing using processing light EL. Figure 4 (a) to Figure 4 (c) are cross-sectional views showing the removal process performed on the workpiece W.

[0088] like Figure 4 As shown in (a), the processing system SYS irradiates the processing light EL to the target irradiation area EA set (or formed) on the surface of the workpiece W. If the processing light EL is irradiated to the target irradiation area EA, the energy of the processing light EL is transferred to the energy transfer portion, and the energy transfer portion includes the portion of the workpiece W that overlaps with the target irradiation area EA and the portion of the workpiece W that is close to the target irradiation area EA. In this embodiment, the processing system SYS can process the workpiece W using the principle of non-thermal processing (such as ablation processing). That is, the processing system SYS can perform non-thermal processing (such as ablation processing) on ​​the workpiece W. For example, if light with a high photon density (in other words, flux) is used as the processing light EL, the material constituting the energy transfer portion in the workpiece W will evaporate and scatter instantly. That is, the material constituting the energy transfer portion in the workpiece W will evaporate and scatter in a time that is much shorter than the heat dissipation time of the workpiece W. In this case, the material constituting the energy transfer portion in the workpiece W can be released from the workpiece W as at least one of ions, atoms, free radicals, molecules, clusters, and solid sheets.

[0089] In the case of non-thermal processing, the processing light EL may include pulse light with a light emission time of picoseconds or less or femtoseconds or less. That is, the processing light EL may include pulse light with a pulse width of picoseconds or less or femtoseconds or less. When pulse light with a light emission time of picoseconds or less or femtoseconds or less is used as the processing light EL, the material constituting the energy transfer portion in the workpiece W may also be sublimated directly without going through a molten state.

[0090] As a result, the target irradiation area EA in the workpiece W and the portion adjacent to the target irradiation area EA are removed. Figure 4 As shown in (b), a concave portion (in other words, a groove portion) having a depth equivalent to the unit processing amount Δz generated by the processing light EL is formed on the surface of the workpiece W. When the workpiece W is processed using the non-thermal processing principle in this way, the processing system SYS can process the workpiece W while minimizing the influence of the heat generated by the energy of the processing light EL on the workpiece W.

[0091] Here, when the processing light EL is pulse light, the unit processing amount Δz may be the depth of the workpiece W removed when the processing light EL of a unit pulse number is irradiated on the workpiece W. The unit pulse number may be 1 or a number greater than 1. When the processing light EL is continuous light, the unit processing amount Δz may be the amount of the workpiece W processed (the depth removed) when the processing light EL of a unit energy is irradiated on the workpiece W per unit time.

[0092] Alternatively, the processing system SYS may perform removal processing of the workpiece W using the so-called thermal processing principle in addition to or instead of the non-thermal processing principle. When performing removal processing of the workpiece W using the thermal processing principle, the processing light EL may include pulse light or continuous light having a light emission time of more than milliseconds or more than nanoseconds. That is, the processing light EL may include pulse light or continuous light having a pulse width of more than milliseconds or more than nanoseconds. In this case, if the heat generated by the energy of the processing light EL is transferred to the energy transfer part, the material constituting the energy transfer part in the workpiece W will be melted by the heat generated by the energy of the processing light EL. The molten material will turn into droplets and fly. Alternatively, the molten material will evaporate by the heat generated by the energy of the processing light EL. As a result, the target irradiation area EA in the workpiece W and the portion close to the target irradiation area EA will be removed. That is, as Figure 4 As shown in (b) of FIG. 1 , a concave portion (in other words, a groove portion) having a depth corresponding to a unit processing amount Δz generated by the processing light EL is formed on the surface of the workpiece W.

[0093] The processing system SYS uses the galvanometer mirror 1212 to move the target irradiation area EA on the surface of the workpiece W along the processing path indicated by the processing path data. That is, the processing system SYS uses the processing light EL to scan the surface of the workpiece W. The processing system SYS uses the processing light EL to scan the surface of the workpiece W along a scanning direction that intersects with the traveling direction of the processing light EL. Furthermore, as needed, the processing system SYS may also use the head driving system 13 to move the processing head 12, and / or use the stage driving system 33 to move the stage 32, thereby moving the target irradiation area EA on the surface of the workpiece W along the processing path indicated by the processing path data. As a result, as shown in FIG. Figure 4As shown in (c), along the scanning trajectory of the processing light EL (i.e., the moving trajectory of the target irradiation area EA), the surface of the workpiece W is at least partially removed. Therefore, the processing system SYS can appropriately remove the portion of the workpiece W that is desired to be processed for removal by causing the processing light EL to scan on the surface of the workpiece W along the desired scanning trajectory corresponding to the area that is desired to be processed for removal. The processing system SYS can appropriately remove the portion of the workpiece W that is desired to be processed for removal by causing the processing light EL to scan on the surface of the workpiece W along the desired scanning trajectory corresponding to the area that is desired to be processed for removal (i.e., the processing path shown in the processing path data). The processing system SYS can remove the portion that is desired to be processed for removal and has a thickness equivalent to the unit processing amount Δz, i.e., the removal layer SL, from the workpiece W by causing the processing light EL to scan on the surface of the workpiece W along the desired scanning trajectory corresponding to the area that is desired to be processed for removal.

[0094] The machining system SYS may also repeatedly remove the removal layer SL having a thickness corresponding to the unit machining amount Δz as needed, thereby machining the workpiece W in such a way that the shape of the workpiece W becomes a desired shape. That is, the machining system SYS may also machine the workpiece W in such a way that the shape of the workpiece W becomes a desired shape by removing a plurality of removal layers SL. Specifically, Figure 4 As shown in (d), the machining system SYS, under the control of the control unit 4, machines the workpiece W in such a manner that the target machining portion TP that should be removed by the removal machining in the workpiece W is removed. On the other hand, the machining system SYS, under the control of the control unit 4, machines the workpiece W in such a manner that the non-target machining portion NP that should not be removed by the removal machining in the workpiece W is not removed.

[0095] Results, such as Figure 4 As shown in (d), the target processing portion TP is removed from the workpiece W, and the non-target processing portion NP remains in the workpiece W. In this case, the processing system SYS can also process the workpiece W under the control of the control unit 4 in such a way that the shape (for example, a three-dimensional shape) of the remaining non-target processing portion NP becomes the target shape.

[0096] (2-2) Wall forming action using removal processing

[0097] In the present embodiment, the machining system SYS can execute a wall forming operation of forming a wall portion WP having a wall shape on a part of the workpiece W by performing the above-described removal machining.

[0098] (2-2-1) Overview of Wall WP

[0099] First, refer to Figure 5 (a) to Figure 5 (b) will now explain the wall portion WP. Figure 5 (a) is a cross-sectional view showing a workpiece W from which the target processing portion TP has not been removed and a workpiece W from which the target processing portion TP has been removed. Figure 5 (b) is a plan view showing the workpiece W from which the target processing portion TP has not been removed and the workpiece W from which the target processing portion TP has been removed.

[0100] like Figure 5 (a) and Figure 5 As shown in (b) of FIG. 1 , the machining system SYS can machine the workpiece W so that at least a portion of the non-target machining portion NP remaining after the target machining portion TP is removed forms the wall portion WP. Figure 5 (a) to Figure 5 In the example shown in (b), the machining system SYS machines the workpiece W so that at least a portion of the non-target machining portion NP forms a wall portion WP surrounding a recess formed in the workpiece W by removing the target machining portion TP.

[0101] The wall portion WP may extend along the traveling direction of the processing light EL. That is, the wall portion WP may include a structure extending along the traveling direction of the processing light EL. As described above, in the present embodiment, the traveling direction of the processing light EL is the Z-axis direction. In this case, the wall portion WP may extend along the Z-axis direction. That is, the wall portion WP may include a structure extending along the Z-axis direction.

[0102] The wall portion WP (for example, at least a portion of the wall portion WP) may also be approximately parallel to the traveling direction of the processing light EL. That is, the wall portion WP may also include a structure that is approximately parallel to the traveling direction of the processing light EL. The state of "the wall portion WP is approximately parallel to the traveling direction of the processing light EL" may include the state of "the wall portion WP is completely parallel to the traveling direction of the processing light EL in the literal sense". In addition, the state of "the wall portion WP is approximately parallel to the traveling direction of the processing light EL" may also include the state of "although the wall portion WP is not completely parallel to the traveling direction of the processing light EL, it can be regarded as the wall portion WP is parallel to the traveling direction of the processing light EL". The state of "the wall portion WP can be regarded as parallel to the traveling direction of the processing light EL" is shown in the enlarged cross-sectional view of the wall portion WP, that is Figure 6 As shown, the state in which "the angle θ1 formed by the wall portion WP and the traveling direction of the processing light EL is less than or smaller than the first predetermined angle" may be included. The first predetermined angle may be an angle less than 12 degrees. The first predetermined angle may also be an angle less than 8 degrees. In addition, the state in which "the wall portion WP is completely parallel to the traveling direction of the processing light EL" may represent the state in which "the angle θ1 formed by the wall portion WP and the traveling direction of the processing light EL is 0 degrees". The angle θ1 formed by the wall portion WP and the traveling direction of the processing light EL may represent the angle formed by the wall portion WP and the axis along the traveling direction of the processing light EL.

[0103] The wall portion WP may include a wall surface WS extending along the traveling direction of the processing light EL. That is, the wall portion WP may include a structure having a wall surface WS extending along the traveling direction of the processing light EL. As described above, in this embodiment, the traveling direction of the processing light EL is the Z-axis direction. In this case, the wall portion WP may include a wall surface WS extending along the Z-axis direction. That is, the wall portion WP may include a structure having a wall surface WS extending along the Z-axis direction.

[0104] At least a portion of the wall surface WS may be an exposed surface Se exposed by removing the target processing portion TP from the workpiece W. That is, at least a portion of the wall surface WS may be an exposed surface Se that cannot be seen from the outside of the workpiece W before the target processing portion TP is removed from the workpiece W. At least a portion of the wall surface WS may be an exposed surface Se that can be seen from the outside of the workpiece W after the target processing portion TP is removed from the workpiece W.

[0105] The wall surface WS (for example, at least a portion of the wall surface WS) may also be approximately parallel to the traveling direction of the processing light EL. That is, the wall surface WS may also include a surface that is approximately parallel to the traveling direction of the processing light EL. In addition, the state of "the wall surface WS is approximately parallel to the traveling direction of the processing light EL" mentioned here may include the state of "the wall surface WS is completely parallel to the traveling direction of the processing light EL in the literal sense". In addition, the state of "the wall surface WS is approximately parallel to the traveling direction of the processing light EL" may also include the state of "although the wall surface WS is not completely parallel to the traveling direction of the processing light EL, it can be regarded as the wall surface WS is parallel to the traveling direction of the processing light EL". The state of "the wall surface WS can be regarded as parallel to the traveling direction of the processing light EL" is shown in the enlarged cross-sectional view of the wall portion WP, that is Figure 6 As shown, the state in which "the angle θ2 formed by the wall surface WS and the traveling direction of the processing light EL is less than or smaller than the second predetermined angle" can be included. The second predetermined angle can be an angle less than 12 degrees. The second predetermined angle can also be an angle less than 8 degrees. In addition, the state in which "the wall surface WS is completely parallel to the traveling direction of the processing light EL" can represent the state in which "the angle θ2 formed by the wall surface WS and the traveling direction of the processing light EL is 0 degrees".

[0106] In addition, if Figure 6 As shown, the "angle θ2 formed by the wall surface WS and the traveling direction of the processing light EL" can also be regarded as the "angle θ1 formed by the wall portion WP and the traveling direction of the processing light EL". In this case, the state of "the wall portion WP is roughly parallel to the traveling direction of the processing light EL" can be regarded as the state of "the wall surface WS is roughly parallel to the traveling direction of the processing light EL". The state of "the wall portion WP extends along the traveling direction of the processing light EL" can also be regarded as the state of "the wall surface WS is roughly parallel to the traveling direction of the processing light EL".

[0107] When the wall surface WS extends along the traveling direction of the processing light EL, as shown in the cross-sectional view of the wall surface WS enlarged, that is, Figure 6 As shown in FIG. 1 , the normal line NL of the wall surface WS may intersect the traveling direction of the processing light EL. For example, the normal line NL of the wall surface WS may intersect the Z-axis direction. In this case, Figure 6 As shown, the angle θz formed by the normal line of the wall surface WS and the axis AXz extending along the Z-axis direction can be larger than the angle formed by the normal line of the wall surface WS and the axis extending along the X-axis direction, and the angle θy formed by the normal line of the wall surface WS and the axis AXy extending along the Y-axis direction. Figure 6 In order to simplify the drawings, the indication of the axis extending along the X-axis direction and the indication of the angle formed by the normal line of the wall surface WS and the axis extending along the X-axis direction are omitted.

[0108] As shown in the cross-sectional view of the enlarged wall portion WP, Figure 7 As shown, the wall portion WP can satisfy the condition that the angle θ3 formed by the upper surface Su of the non-target processing part NP and the wall portion WP is approximately 90 degrees. The state of "angle θ3 is approximately 90 degrees" may include the state of "angle θ3 is completely consistent with 90 degrees in the literal sense". The state of "angle θ3 is approximately 90 degrees" may also include the state of "although angle θ3 is smaller than 90 degrees, angle θ3 can be regarded as 90 degrees". The state of "angle θ3 smaller than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ3 is larger than the third predetermined angle". The third predetermined angle may be an angle of 78 degrees or more. The third predetermined angle may also be an angle of 82 degrees or more. Furthermore, the state of "angle θ3 is approximately 90 degrees" may also include the state of "although angle θ3 is larger than 90 degrees, angle θ3 can be regarded as 90 degrees". The state of "angle θ3 larger than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ3 is smaller than the fourth predetermined angle". The fourth predetermined angle may be an angle of 102 degrees or less. The fourth predetermined angle may be an angle equal to or smaller than 98 degrees.

[0109] In addition, the upper surface Su of the non-target processing part NP may be a surface facing upward (e.g., the +Z side). The upper surface Su of the non-target processing part NP may also be an upper surface of the non-target processing part NP. The upper surface of the non-target processing part NP may be a surface located higher than other surfaces on the surface of the non-target processing part NP. In particular, the upper surface Su of the non-target processing part NP may be a surface connected to the upper end of the wall part WP (e.g., the end on the +Z side). The upper surface Su of the non-target processing part NP may include a surface that has been exposed before the target processing part TP is removed from the workpiece W.

[0110] As shown in the cross-sectional view of the enlarged wall portion WP, Figure 7As shown, the wall portion WP may also satisfy the condition that the angle θ4 formed by the bottom surface Sb of the non-target processing portion NP and the wall portion WP is approximately 90 degrees. The state of "angle θ4 is approximately 90 degrees" may include the state of "angle θ4 is completely consistent with 90 degrees in the literal sense". The state of "angle θ4 is approximately 90 degrees" may also include the state of "although angle θ4 is smaller than 90 degrees, angle θ4 can be regarded as 90 degrees". The state of "angle θ4 can be regarded as 90 degrees" may include the state of "angle θ4 is larger than the fifth predetermined angle". The fifth predetermined angle may be an angle of 78 degrees or more. The fifth predetermined angle may also be an angle of 82 degrees or more. Furthermore, the state of "angle θ4 is approximately 90 degrees" may also include the state of "although angle θ4 is larger than 90 degrees, angle θ4 can be regarded as 90 degrees". The state of "angle θ4 larger than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ4 is smaller than the sixth predetermined angle". The sixth predetermined angle may be an angle of less than 102 degrees. The sixth predetermined angle may also be an angle of less than 98 degrees.

[0111] In addition, the bottom surface Sb of the non-target processing part NP may be a surface facing upward (e.g., the +Z side). In particular, the bottom surface Sb of the non-target processing part NP may be a surface connected to the lower end of the wall part WP (e.g., the end on the -Z side). The bottom surface Sb of the non-target processing part NP may include an exposed surface Se exposed by removing the target processing part TP from the workpiece W. The bottom surface Sb of the non-target processing part NP may also include a surface forming the bottom of a pit formed by removing the target processing part TP from the workpiece W.

[0112] As shown in the cross-sectional view of the enlarged wall surface WS, Figure 7As shown, the wall surface WS of the wall portion WP can satisfy the condition that the angle θ5 formed by the upper surface Su of the non-target processing part NP and the wall surface WS is approximately 90 degrees. The state of "angle θ5 is approximately 90 degrees" may include the state of "angle θ5 is completely consistent with 90 degrees in the literal sense". The state of "angle θ5 is approximately 90 degrees" may also include the state of "although angle θ5 is smaller than 90 degrees, angle θ5 can be regarded as 90 degrees". The state of "angle θ5 smaller than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ5 is larger than the seventh predetermined angle". The seventh predetermined angle may be an angle of 78 degrees or more. The seventh predetermined angle may also be an angle of 82 degrees or more. Furthermore, the state of "angle θ5 is approximately 90 degrees" may also include the state of "although angle θ5 is larger than 90 degrees, angle θ5 can be regarded as 90 degrees". The state of "angle θ5 larger than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ5 is smaller than the eighth predetermined angle". The eighth predetermined angle may be an angle of 102 degrees or less. The eighth predetermined angle may also be an angle less than 98 degrees. In addition, the state of "the angle θ3 formed by the upper surface Su of the non-target processing part NP and the wall WP is approximately 90 degrees" may also be regarded as the state of "the angle θ5 formed by the upper surface Su of the non-target processing part NP and the wall WS is approximately 90 degrees".

[0113] As shown in the cross-sectional view of the enlarged wall surface WS, Figure 7 As shown, the wall surface WS may also satisfy the condition that the angle θ6 formed by the bottom surface Sb of the non-target processing part NP and the wall surface WS is approximately 90 degrees. The state of "angle θ6 is approximately 90 degrees" may include the state of "angle θ6 is completely consistent with 90 degrees in the literal sense". The state of "angle θ6 is approximately 90 degrees" may also include the state of "although angle θ6 is smaller than 90 degrees, angle θ6 can be regarded as 90 degrees". The state of "angle θ6 can be regarded as 90 degrees" may include the state of "angle θ6 is larger than the ninth predetermined angle". The ninth predetermined angle may be an angle of 78 degrees or more. The ninth predetermined angle may also be an angle of 82 degrees or more. Furthermore, the state of "angle θ6 is approximately 90 degrees" may also include the state of "although angle θ6 is larger than 90 degrees, angle θ6 can be regarded as 90 degrees". The state of "angle θ6 larger than 90 degrees can be regarded as 90 degrees" may include the state of "angle θ6 is smaller than the tenth predetermined angle". The tenth predetermined angle may be an angle of less than 102 degrees. The tenth predetermined angle may also be an angle of less than 98 degrees. Furthermore, the state in which "the angle θ4 formed by the bottom surface Sb of the non-target processing portion NP and the wall portion WP is approximately 90 degrees" can also be regarded as the state in which "the angle θ6 formed by the bottom surface Sb of the non-target processing portion NP and the wall surface WS is approximately 90 degrees".

[0114] (2-2-1) Details of the wall forming operation for forming the wall portion WP

[0115] In order to form the wall portion WP, the processing system SYS can divide the target processing portion TP into a first portion WTP1 and a second portion WTP2 under the control of the control unit 4. That is, the processing system SYS can set a part of the target processing portion TP as the first portion WTP1 and set the remaining part of the target processing portion TP as the second portion WTP2 under the control of the control unit 4. On this basis, the processing system SYS can perform a first removal processing action and a second removal processing action under the control of the control unit 4, thereby removing the target processing portion TP, wherein the first removal processing action is to irradiate processing light EL on at least a part of the first portion WTP1 to remove at least a part of the first portion WTP1, and the second removal processing action is to irradiate processing light EL on at least a part of the second portion WTP2 to remove at least a part of the second portion WTP2. That is, the processing system SYS can form the wall portion WP by performing the first removal processing action and the second removal processing action.

[0116] In order to form Figure 5 An example of the first part WTP1 and the second part WTP2 set according to the wall WP shown in FIG. Figure 8 (a) and Figure 8 as shown in (b). Figure 8 (a) is a cross-sectional view showing an example of a first portion WTP1 and a second portion WTP2 of the target processing portion TP, Figure 8 (b) is a plan view showing an example of the first portion WTP1 and the second portion WTP2 of the target process portion TP.

[0117] like Figure 8 As shown in (a), the first part WTP1 can be adjacent to the second part WTP2. In particular, the first part WTP1 can be adjacent to the second part WTP2 along the adjacent direction that intersects with the traveling direction of the processing light EL. As described above, in the present embodiment, the traveling direction of the processing light EL is the Z-axis direction. In this case, the first part WTP1 can be adjacent to the second part WTP2 along the direction that intersects with the Z direction, that is, the adjacent direction. That is, the first part WTP1 can be adjacent to the second part WTP2 along the adjacent direction, that is, the direction along the XY plane. In other words, the first part WTP1 can be adjacent to the second part WTP2 along the adjacent direction that includes a directional component along at least one of the X-axis direction and the Y-axis direction.

[0118] The first part WTP1 may also be adjacent to the non-target processing part NP along the adjacent direction. In this case, the boundary between the first part WTP1 and the non-target processing part NP may form a boundary BD between the target processing part TP and the non-target processing part NP. In particular, the first part WTP1 may be adjacent to a portion of the non-target processing part NP that will become the wall portion WP along the adjacent direction. In this case, the boundary between the first part WTP1 and the non-target processing part NP (especially the wall portion WP) may form a boundary BD between the target processing part TP and the non-target processing part NP (especially the wall portion WP).

[0119] On the other hand, the second part WTP2 may not be adjacent to the non-target processing part NP along the adjacent direction. In particular, the second part WTP2 may not be adjacent to the portion of the non-target processing part NP that will become the wall portion WP along the adjacent direction. In this case, the second part WTP2 may be located at a position farther from the non-target processing part NP along the adjacent direction than the first part WTP1. That is, the distance between the second part WTP2 and the non-target processing part NP along the adjacent direction may be longer than the distance between the first part WTP1 and the non-target processing part NP along the adjacent direction. In particular, the second part WTP2 may be located at a position farther from the portion of the non-target processing part NP that will become the wall portion WP along the adjacent direction than the first part WTP1. That is, the distance between the second part WTP2 and the portion of the non-target processing part NP that will become the wall portion WP along the adjacent direction may be longer than the distance between the first part WTP1 and the portion of the non-target processing part NP that will become the wall portion WP along the adjacent direction. In addition, a part of the second part WTP2 may also be adjacent to the non-target processing part NP.

[0120] The control unit 4 may identify the characteristics (e.g., at least one of the position and the shape) of the wall portion WP of the workpiece W based on shape data (e.g., three-dimensional model data) representing the three-dimensional shape of the processed workpiece W, and determine the first portion WTP1 based on the identified characteristics of the wall portion WP. For example, the control unit 4 may determine the portion of the workpiece W that is less than a predetermined distance away from the position of the identified wall portion WP in at least one of the X-axis direction and the Y-axis direction as the first portion WTP1.

[0121] The control unit 4 may determine the first portion WTP1 based on the shape of the target processing portion TP. For example, the control unit 4 may determine (in other words, set) the range of the first portion WTP1 based on the shape of the target processing portion TP.

[0122] Furthermore, after the first part WTP1 is determined, the second part WTP2 is automatically determined. This is because the second part WTP2 is the part of the workpiece W other than the first part WTP1. Therefore, the action of determining the first part WTP1 can be substantially regarded as the action of determining the second part WTP2.

[0123] Conversely, the control unit 4 may determine the second portion WTP2 based on the shape of the target processing portion TP. In this case as well, after the second portion WTP2 is determined, the first portion WTP1 is automatically determined. That is, the control unit 4 may indirectly determine the first portion WTP1 by determining the second portion WTP2. Therefore, the action of determining the second portion WTP2 may be substantially included in the action of determining the first portion WTP1.

[0124] The shape of the target processing portion TP may include a distance (in other words, a length or a depth) Dis1 along the direction of the wall portion WP of the target processing portion TP (see Figure 8 (a)). In addition, the distance Dis1 along the direction of the wall WP of the target processing part TP can represent the distance (length or depth) along the direction of the wall surface WS of the target processing part TP. In this case, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 based on the distance Dis1 along the wall WP of the target processing part TP. For example, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 in such a manner that the longer the distance Dis1, the larger the width (specifically, the dimension along the adjacent direction) of the first part WTP1.

[0125] The shape of the target processing portion TP may include an angle θ3 formed between the upper surface Su of the non-target processing portion NP and the wall portion WP (see Figure 7 ). In this case, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 based on the angle θ3. For example, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 in such a manner that the smaller the angle θ3 is, the larger the width (specifically, the dimension along the adjacent direction) of the first part WTP1 is.

[0126] In addition, the shape of the target processing portion TP may include an angle θ1 (see FIG. 1 ) formed between the wall portion WP and the traveling direction of the processing light EL in addition to or instead of the angle θ3. Figure 6 ), the angle θ2 formed by the wall surface WS and the traveling direction of the processing light EL (refer to Figure 6 ), the angle θ4 formed between the bottom surface Sb of the non-target processing part NP and the wall part WP (refer to Figure 6), the angle θ5 between the upper surface Su of the non-target processing part NP and the wall surface WS (refer to Figure 7 ), and the angle θ6 between the bottom surface Sb of the non-target processing part NP and the wall surface WS (refer to Figure 7 ). For example, the control unit 4 may determine at least one of the first portion WTP1 and the second portion WTP2 in a manner that the smaller the angle θ5 is, the larger the width of the first portion WTP1 is. For example, the control unit 4 may also determine at least one of the first portion WTP1 and the second portion WTP2 in a manner that the larger at least one of the angles θ1, θ2, θ4, and θ6 is, the larger the width of the first portion WTP1 is.

[0127] The shape of the target processing portion TP may also include a distance Dis2 between the upper end of the wall portion WP and the lower end of the wall portion WP in the adjacent direction (see Figure 6 ). In this case, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 based on the distance Dis2. For example, the control unit 4 can determine at least one of the first part WTP1 and the second part WTP2 in such a manner that the larger the distance Dis2, the larger the width (specifically, the dimension along the adjacent direction) of the first part WTP1.

[0128] In addition, typically, the width of the first portion WTP1 is several tens of micrometers. As an example, the width of the first portion WTP1 is 20 micrometers to 30 micrometers. However, the width of the first portion WTP1 is not limited to the size exemplified here.

[0129] Afterwards, the control unit 4 may generate processing control data for controlling the processing system SYS (especially the processing unit 1 and the platform unit 3) to process the determined first part WTP1 and the second part WTP2. That is, the control unit 4 may generate processing control data for controlling the processing system SYS (especially the processing unit 1 and the platform unit 3) to process the target processing part TP including the determined first part WTP1 and the second part WTP2. Afterwards, the processing system SYS (especially the processing unit 1 and the platform unit 3) may remove the target processing part TP based on the processing control data.

[0130] As described above, the processing control data may include processing path data. The processing path data may indicate the relative movement trajectory of the target irradiation area EA of the processing light EL on the surface of the workpiece W relative to the surface of the workpiece W. That is, the processing path data may indicate the relative movement trajectory (i.e., the so-called processing path) of the irradiation position of the processing light EL on the surface of the workpiece W relative to the surface of the workpiece W. In this case, the control unit 4 may generate processing control data indicating the relative movement trajectory (i.e., the so-called processing path) of the irradiation position of the processing light EL irradiated to the workpiece W for processing the determined first part WTP1 and the second part WTP2 relative to the surface of the workpiece W.

[0131] The control unit 4 may also generate the processing control data in such a manner that the processing conditions used to remove the first part WTP1 are different from the processing conditions used to remove the second part WTP2. For example, the control unit 4 may generate the processing control data in such a manner that when removing the first part WTP1, the processing conditions are the first processing conditions, and when removing the second part WTP2, the processing conditions are the second processing conditions different from the first conditions.

[0132] The processing conditions may include light conditions related to the processing light EL irradiated to the workpiece W. In this case, the control unit 4 may generate processing control data in such a manner that the light conditions of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1 and the light conditions of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2 are different. For example, the control unit 4 may generate processing control data in such a manner that the light conditions are the first light conditions in the case of removing the first portion WTP1 and the light conditions are the second light conditions different from the first light conditions in the case of removing the second portion WTP2. As a result, the processing system SYS may perform a first removal processing action that removes at least a portion of the first portion WTP1 by irradiating the processing light EL of the first light condition to the first portion WTP1. On the other hand, the processing system SYS may also perform a second removal processing action that removes at least a portion of the second portion WTP2 by irradiating the processing light EL of the second light condition to the second portion WTP2.

[0133] The light condition related to the processing light EL may include a condition related to the flux of the processing light EL. In this case, the control unit 4 may generate the processing control data in such a manner that the flux of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1 is different from the flux of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the control unit 4 may generate the processing control data in such a manner that the processing light EL of a first flux is irradiated to the workpiece W in the case of removing the first portion WTP1, and the processing light EL of a second flux different from the first flux is irradiated to the workpiece W in the case of removing the second portion WTP2.

[0134] In this embodiment, in particular, as shown in the graph representing the flux of the processing light EL, Fig. 9 As shown, the control unit 4 can generate processing control data in such a manner that the workpiece W is irradiated with a first flux of processing light EL in the case of removing the first part WTP1, and in such a manner that the workpiece W is irradiated with a second flux of processing light EL lower than the first flux in the case of removing the second part WTP2. As an example, the control unit 4 can generate processing control data in such a manner that the first flux is several times to several tens of times (for example, twenty times) the second flux. As a result, the processing system SYS can perform a first removal processing action, which removes at least a portion of the first part WTP1 by irradiating the first flux of processing light EL to the first part WTP1. On the other hand, the processing system SYS can also perform a second removal processing action, which removes at least a portion of the second part WTP2 by irradiating the second part WTP2 with a second flux of processing light EL lower than the first flux.

[0135] Here, for the reason why the flux of the processing light EL irradiated to the first part WTP1 is made higher than the flux of the processing light EL irradiated to the second part WTP2, refer to Fig.10 (a) and Fig.10 (b) is used for explanation. Fig.10 (a) shows the processing light EL incident on the surface of the workpiece W at a first incident angle. Fig.10 (b) shows the processing light EL incident on the surface of the workpiece W at a second incident angle larger than the first incident angle. Fig.10 (a) and Fig.10As shown in (b), the larger the incident angle of the processing light EL, the larger the area actually irradiated by the processing light EL on the surface of the workpiece W. Therefore, if the flux of the processing light EL is fixed, the larger the incident angle of the processing light EL, the smaller the energy transferred from the processing light EL to the workpiece W per unit area or per unit time. Therefore, when the flux of the processing light EL is fixed, the larger the incident angle of the processing light EL, the higher the possibility that the energy transferred to the workpiece W is insufficient.

[0136] Here, when processing the first portion WTP1 adjacent to the wall WP, the possibility that the processing light EL is irradiated to the wall WP along the traveling direction of the processing light EL (i.e., the exposed surface Se to be exposed) is higher than when processing the second portion WTP2 not adjacent to the wall WP. Therefore, when processing the first portion WTP1 adjacent to the wall WP, the possibility that the incident angle of the processing light EL is larger is higher than when processing the second portion WTP2 not adjacent to the wall WP. As a result, when processing the first portion WTP1 adjacent to the wall WP, the processing light EL is incident at a larger angle than when processing the second portion WTP2 not adjacent to the wall WP. Fig.10 The possibility of irradiating the workpiece W in the state shown in (b) increases. Therefore, when the flux of the processing light EL is fixed, the energy transmitted to the first part WTP1 per unit area or per unit time may be less than the energy transmitted to the second part WTP2 per unit area or per unit time. As a result, the processing amount of the first part WTP1 may be insufficient, and a suitable wall portion WP may not be formed. For example, the processing amount of the first part WTP1 may be insufficient, and the angle θ3 formed between the upper surface Su of the non-target processing part NP and the wall portion WP may be accidentally formed (refer to Figure 7 ) is smaller than the desired angle of the wall portion WP. For example, the first portion WTP1 may be insufficiently processed, and a wall portion WP that is inclined relative to the Z-axis direction (that is, not vertically standing) may be accidentally formed when a wall portion WP extending along the Z-axis direction (that is, vertically standing) is to be formed.

[0137] Therefore, in the present embodiment, the processing system SYS makes the flux of the processing light EL irradiated to the first part WTP1 higher than the flux of the processing light EL irradiated to the second part WTP2. As a result, the possibility that the energy transferred to the first part WTP1 per unit area or per unit time is less than the energy transferred to the second part WTP2 per unit area or per unit time is reduced. As a result, the possibility that the processing amount of the first part WTP1 is insufficient is reduced. Therefore, the processing system SYS can process the workpiece W in a manner to form a suitable wall portion WP. For example, the processing system SYS can appropriately form a wall portion WP in which the angle θ3 formed by the upper surface Su of the non-target processing part NP and the wall portion WP is a desired angle. For example, the processing system SYS can appropriately form a wall portion WP extending in the Z-axis direction (i.e., standing vertically) under the condition that the wall portion WP extending in the Z-axis direction (i.e., standing vertically) is to be formed.

[0138] The processing system SYS can change the flux of the processing light EL by controlling the processing light source 11. Specifically, the processing system SYS can control the processing light source 11 in a manner to change the intensity of the processing light EL emitted from the processing light source 11, thereby changing the flux of the processing light EL. For example, as shown in the graph representing the intensity of the processing light EL emitted from the processing light source 11, Fig.11 As shown, the processing system SYS can control the processing light source 11 in such a way that the intensity of the processing light EL irradiated to the first part WTP1 is higher than the intensity of the processing light EL irradiated to the second part WTP2. As a result, the flux of the processing light EL irradiated to the first part WTP1 is higher than the flux of the processing light EL irradiated to the second part WTP2.

[0139] The processing system SYS can also change the flux of the processing light EL by controlling the focus changing optical system 1211. Specifically, the processing system SYS can also control the focus changing optical system 1211 in a manner that changes the size (e.g., diameter) of the beam spot BS formed by the processing light EL on the surface of the workpiece W, thereby changing the flux of the processing light EL. For example, as shown in the graph representing the size of the beam spot BS, Fig.12 As shown, the processing system SYS can control the focus changing optical system 1211 in such a manner that the size of the beam spot BS of the processing light EL irradiated to the first portion WTP1 is smaller than the size of the beam spot BS of the processing light EL irradiated to the second portion WTP2. As a result, the flux of the processing light EL irradiated to the first portion WTP1 is higher than the flux of the processing light EL irradiated to the second portion WTP2.

[0140] The processing system SYS may also change the flux of the processing light EL by controlling the head driving system 13 that moves the processing head 12. For example, if the processing head 12 moves along the Z-axis direction, the size of the beam spot BS formed by the processing light EL on the surface of the workpiece W changes. Therefore, the processing system SYS may also change the flux of the processing light EL by moving the processing head 12 along the Z-axis direction using the head driving system 13 to change the size of the beam spot BS.

[0141] also, Fig.12 In the example shown, it can be said that the size of the beam spot BS of the processing light EL irradiated on the second part WTP2 is larger than the size of the beam spot BS of the processing light EL irradiated on the first part WTP1. Here, the larger the size of the beam spot BS, the larger the size of the area irradiated by the processing light EL per unit time on the workpiece W. As a result, the throughput of the processing of the workpiece W is improved. Therefore, in the present embodiment, the processing system SYS can give priority to improving the throughput over forming a suitable wall portion WP in the second part WTP2 where the wall portion WP is not required to be formed by making the size of the beam spot BS of the processing light EL irradiated on the second part WTP2 where the wall portion WP is not required to be formed larger than the size of the beam spot BS of the processing light EL irradiated on the first part WTP1.

[0142] The light condition related to the processing light EL may also include a condition related to the overlap rate of the processing light EL. The overlap rate of the processing light EL may represent the repetition rate of the beam spot BS of the processing light EL irradiated to the workpiece W at a certain timing and the beam spot BS of the processing light EL irradiated to the workpiece W at another timing following the certain timing. In this case, the control unit 4 may generate the processing control data in such a manner that the overlap rate of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1 and the overlap rate of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2 are different. For example, the control unit 4 may generate the processing control data in such a manner that the processing light EL whose overlap rate is set to a first rate is irradiated to the workpiece W in the case of removing the first portion WTP1, and the processing light EL whose overlap rate is set to a second rate different from the first rate is irradiated to the workpiece W in the case of removing the second portion WTP2.

[0143] The light condition related to the processing light EL may also include a condition related to the number of irradiations of the processing light EL. The number of irradiations of the processing light EL may indicate the number of times the processing light EL is irradiated to a certain area on the workpiece W. In this case, the control unit 4 may generate processing control data in such a manner that the number of irradiations of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1 is different from the number of irradiations of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the control unit 4 may generate processing control data in such a manner that the number of irradiations of the processing light EL is a predetermined first number of times when the first portion WTP1 is removed, and the number of irradiations of the processing light EL is a predetermined second number of times different from the first number of times when the second portion WTP2 is removed.

[0144] The control unit 4 can generate processing control data based on the result of the test processing performed on the workpiece for testing (hereinafter referred to as the "test workpiece"). For example, the processing system SYS can perform the test processing in a state where the processing conditions are set to the established test conditions. As an example, the processing system SYS can perform the test processing in a state where the flux of the processing light EL is set to the established test flux. As another example, the processing system SYS can also perform the test processing in a state where the overlap rate of the processing light EL is set to the established test overlap rate. As another example, the processing system SYS can also perform the test processing in a state where the number of irradiations of the processing light EL is set to the established test number. Or, for example, the processing system SYS can also perform the test processing while changing the processing conditions. As an example, the processing system SYS can perform the test processing while changing the flux of the processing light EL. As another example, the processing system SYS can also perform the test processing while changing the overlap rate of the processing light EL. The processing system SYS can also perform the test processing while changing the number of irradiations of the processing light EL. Thereafter, the processing system SYS can use the measuring unit 2 to measure the processing marks (e.g., the depth of the processing marks) formed by the test processing. Then, the control unit 4 may generate processing control data based on the measurement results of the processing traces formed by the test processing. For example, the control unit 4 may generate processing control data in such a way that the flux of the processing light EL becomes the desired flux based on the measurement results of the processing traces formed by the test processing. For example, the control unit 4 may also generate processing control data in such a way that the overlap rate of the processing light EL becomes the desired overlap rate based on the measurement results of the processing traces formed by the test processing. For example, the control unit 4 may also generate processing control data in such a way that the number of irradiations of the processing light EL becomes the desired number of times based on the measurement results of the processing traces formed by the test processing.

[0145] The control unit 4 may also set the processing conditions of the processing light EL used to perform the second removal processing action (i.e., the processing light EL irradiated to the second part WTP2) based on the measurement results of the processing traces formed by the test processing. Furthermore, the control unit 4 may set the processing light EL used to perform the first removal processing action (i.e., the processing light EL irradiated to the first part WTP1) based on the processing conditions of the processing light EL used to perform the second removal processing action. For example, the control unit 4 may set the flux of the processing light EL used to perform the second removal processing action (i.e., the processing light EL irradiated to the second part WTP2) based on the measurement results of the processing traces formed by the test processing. Furthermore, the control unit 4 may automatically set a higher flux than the flux of the processing light EL used to perform the second removal processing action as the flux of the processing light EL used to perform the first removal processing action (i.e., the processing light EL irradiated to the first part WTP1).

[0146] The processing system SYS can remove at least a portion of the target processing portion TP by alternately repeating a first removal processing action of removing at least a portion of the first portion WTP1 and a second removal processing action of removing at least a portion of the second portion WTP2.

[0147] For example, Fig.13 As shown, the processing system SYS can remove a part of the first part WTP1 by performing a first removal processing action. Specifically, the processing system SYS can scan the surface of the first part WTP1 using the processing light EL, thereby removing a part of the first part WTP1. That is, the processing system SYS can remove the removal layer SL that is a part of the first part WTP1. In this case, the processing system SYS can remove a single removal layer SL through one first removal processing action. In this case, the processing system SYS can scan the first part WTP1 once using the processing light EL in a direction intersecting the traveling direction of the processing light EL, thereby removing a single removal layer SL. Alternatively, the processing system SYS can also remove multiple removal layers SL through one first removal processing action. In this case, the processing system SYS can scan the first part WTP1 multiple times using the processing light EL in a direction intersecting the traveling direction of the processing light EL, thereby removing multiple removal layers SL.

[0148] After removing a portion of the first portion WTP1, as Fig.14As shown, the processing system SYS can remove a part of the second part WTP2 by performing a second removal processing action. Specifically, the processing system SYS can scan the surface of the second part WTP2 using the processing light EL, thereby removing a part of the second part WTP2. That is, the processing system SYS can remove the removal layer SL that is a part of the second part WTP2. In this case, the processing system SYS can remove a single removal layer SL through one second removal processing action. In this case, the processing system SYS can scan the second part WTP2 once using the processing light EL in a direction intersecting the traveling direction of the processing light EL, thereby removing a single removal layer SL. Alternatively, the processing system SYS can also remove multiple removal layers SL through one second removal processing action. In this case, the processing system SYS can scan the second part WTP2 multiple times using the processing light EL in a direction intersecting the traveling direction of the processing light EL, thereby removing multiple removal layers SL.

[0149] The number of removal layers SL removed by one first removal processing action may be the same as the number of removal layers SL removed by one second removal processing action. For example, the processing system SYS may perform a first removal processing action for removing N (N is a variable representing an integer greater than 1) removal layers SL that are part of the first part WTP1, and perform a second removal processing action for removing N removal layers SL that are part of the second part WTP2. That is, the processing system SYS may perform a first removal processing action including an action of removing N times the removal layers SL that are part of the first part WTP1, and perform a second removal processing action including an action of removing N times the removal layers SL that are part of the second part WTP2.

[0150] Alternatively, the number of removal layers SL removed by a first removal processing action may be different from the number of removal layers SL removed by a second removal processing action. For example, the processing system SYS may also execute a first removal processing action for removing N removal layers SL that are part of the first part WTP1, and execute a second removal processing action for removing M (M is a variable that is different from the variable N and represents an integer greater than 1) removal layers SL that are part of the second part WTP2. That is, the processing system SYS may also execute a first removal processing action including an action of removing N times the removal layer SL that is part of the first part WTP1, and execute a second removal processing action including an action of removing M times the removal layer SL that is part of the second part WTP2.

[0151] Here, as described above, the flux of the processing light EL irradiated to the first part WTP1 may be different from the flux of the processing light EL irradiated to the second part WTP2. That is, the flux of the processing light EL used in the first removal processing operation may be different from the flux used in the second removal processing operation. In this case, the thickness of the removal layer SL removed by the first removal processing operation (i.e., Figure 4 The unit processing amount Δz) shown in FIG. 1 is different from the thickness of the removal layer SL removed by the second removal processing action. In this case, the number of removal layers SL removed by one first removal processing action may be different from the number of removal layers SL removed by one second removal processing action. For example, the processing system SYS may perform the first and second removal processing actions in such a way that the sum of the thicknesses of the N removal layers SL removed by one first removal processing action is the same as the sum of the thicknesses of the M removal layers SL removed by one second removal processing action.

[0152] As an example, the flux of the processing light EL irradiated to the first part WTP1 may be higher than the flux of the processing light EL irradiated to the second part WTP2. That is, the flux of the processing light EL used in the first removal processing operation may be higher than the flux used in the second removal processing operation. In this case, the thickness of the removal layer SL removed by the first removal processing operation (i.e. Figure 4 The unit processing amount Δz) shown is thicker than the thickness of the removal layer SL removed by the second removal processing operation. In this case, the amount of removal layer SL removed by one first removal processing operation may be less than the amount of removal layer SL removed by one second removal processing operation.

[0153] After removing a portion of the second portion WTP2, the processing system SYS can perform the first removal processing action again. Fig.15 As shown, the processing system SYS can remove at least a portion of the remaining first portion WTP1 by performing a first removal processing action. Specifically, the processing system SYS can scan the surface of the remaining first portion WTP1 with the processing light EL, thereby removing at least a portion of the first portion WTP1. That is, the processing system SYS can remove the removal layer SL that is at least a portion of the remaining first portion WTP1.

[0154] After removing at least a portion of the first portion WTP1, the processing system SYS may perform a second removal processing action again. Fig.16As shown, the processing system SYS can remove at least a portion of the remaining second portion WTP2 by performing a second removal processing action. Specifically, the processing system SYS can scan the surface of the remaining second portion WTP2 with the processing light EL, thereby removing at least a portion of the remaining second portion WTP2. That is, the processing system SYS can remove the removal layer SL that is a portion of the remaining second portion WTP2.

[0155] Thereafter, the processing system SYS repeats the same operation until the first part WTP1 and the second part WTP2 are removed. That is, the processing system SYS repeats the same operation until the target processing part TP is removed.

[0156] During at least a portion of the time during which the first removal operation for removing the first portion WTP1 is performed, Fig.17 As shown, the processing system SYS can use the processing light EL to scan the first part WTP1 in a manner that makes the scanning direction of the processing light EL on the surface of the workpiece W and the extension direction of the boundary BD between the target processing part TP and the non-target processing part NP on the surface of the workpiece W consistent. That is, the processing system SYS can use the processing light EL to scan the first part WTP1 in a manner that changes the positional relationship between the workpiece W and the irradiation position of the processing light EL in the extension direction of the boundary BD. In this case, compared with the case where the first part WTP1 is scanned by the processing light EL in a direction different from the extension direction of the boundary BD, the processing system SYS can process the workpiece W in a manner that forms a suitable wall portion wp. For example, the processing system SYS can appropriately form the angle θ3 (refer to Figure 7 ) is a wall portion WP of a desired angle. For example, the processing system SYS can appropriately form a wall portion WP extending along the Z-axis direction (ie, standing vertically) when a wall portion WP extending along the Z-axis direction (ie, standing vertically) is to be formed.

[0157] Furthermore, the processing system SYS may control (e.g., change) the aperture angle of the processing light EL in such a manner that the aperture angle of the processing light EL when irradiating the processing light EL to the first portion WTP1 is different from the aperture angle of the processing light EL when irradiating the processing light EL to the second portion WTP2. Furthermore, the processing system SYS may control (e.g., change) the overlap rate of the processing light EL in such a manner that the overlap rate of the processing light EL when processing the first portion WTP1 is different from the overlap rate of the processing light EL when processing the second portion WTP2. The processing system SYS may control (e.g., change) the size of the beam spot BS of the processing light EL in such a manner that the size of the beam spot BS of the processing light EL when processing the first portion WTP1 is different from the size of the beam spot BS of the processing light EL when processing the second portion WTP2. The processing system SYS may control (e.g., change) the scanning direction of the processing light EL in such a manner that the scanning direction of the processing light EL when processing the first portion WTP1 is different from the scanning direction of the processing light EL when processing the second portion WTP2.

[0158] (3) Technical effects of the processing system SYS

[0159] As described above, the machining system SYS of the present embodiment performs a first removal machining action of removing at least a portion of the first portion WTP1 in the target machining portion TP and a second removal machining action of removing at least a portion of the second portion WTP2 in the target machining portion TP in order to form the wall portion WP by removing the target machining portion TP. Therefore, compared with the machining system of the first comparative example in which the target machining portion TP is removed without being divided into the first portion WTP1 and the second portion WTP2, the machining system SYS can machine the workpiece W in a manner that forms a suitable wall portion WP. For example, the machining system SYS can appropriately form an angle θ3 (see FIG. 1 ) between the upper surface Su of the non-target machining portion NP and the wall portion WP. Figure 7 ) is a wall portion WP of a desired angle. As an example, the processing system SYS can form a wall portion WP of a desired angle. Fig.18 In the case where the wall portion WP extends in the Z-axis direction (ie, stands vertically) as shown in (a), it is appropriate to form the wall portion WP as shown in Fig.18 The wall portion WP shown in (a) of FIG. 1 extends in the Z-axis direction (i.e., stands vertically). The processing system SYS is to form the wall portion WP shown in FIG. Fig.18 In the case where the wall portion WP extends in the Z-axis direction (ie, stands vertically) as shown in (a), the Fig.18 The possibility of the wall portion WP being inclined (i.e., not vertically erected) relative to the Z-axis direction as shown in (b) is reduced. In this way, the machining system SYS can machine the workpiece W in a manner to form a suitable wall portion WP. That is, the machining system SYS can remove the target machining portion TP from the workpiece W in a manner that leaves the non-target machining portion NP that can properly function as the wall portion WP.

[0160] In particular, the processing system SYS can set the flux (i.e., processing conditions) of the processing light EL used in the first removal processing action to be different from the flux (i.e., processing conditions) used in the second removal processing action. In particular, the processing system SYS can set the flux of the processing light EL used in the first removal processing action to be higher than the flux used in the second removal processing action. Therefore, as described in detail above, the processing system SYS can process the workpiece W in a manner that forms a suitable wall portion WP.

[0161] (4) Variations

[0162] Next, a modification example of the machining system SYS will be described.

[0163] (4-1) First Variation

[0164] In the above description, the processing system SYS divides the target processing part TP into the first part WTP1 and the second part WTP2 under the control of the control unit 4. However, in the first variation, the processing system SYS may also divide the target processing part TP into the first part WTP1, the second part WTP2 and the third part WTP3 under the control of the control unit 4. That is, the processing system SYS may also set a part of the target processing part TP as the first part WTP1, set another part of the target processing part TP as the second part WTP2, and set the remaining part of the target processing part TP as the third part WTP3 under the control of the control unit 4.

[0165] In order to form Figure 5 An example of the first part WTP1, the second part WTP2 and the third part WTP3 set according to the wall portion WP shown in FIG. Fig.19 shown. Fig.19 It is a cross-sectional view showing an example of a first portion WTP1, a second portion WTP2, and a third portion WTP3 of the target process portion TP.

[0166] like Fig.19 As shown, the third portion WTP3 may be adjacent to both the first portion WTP1 and the second portion WTP2. Specifically, the third portion WTP3 may be adjacent to the first portion WTP1 and the second portion WTP2 along the traveling direction of the processing light EL. In particular, the third portion WTP3 may be located below the first portion WTP1 and the second portion WTP2.

[0167] The control unit 4 may set the third portion WTP3 so that the size of the third portion WTP3 in the traveling direction of the processing light EL (in this case, the height and thickness in the z-axis direction) becomes a predetermined size. For example, the control unit 4 may set the third portion WTP3 having a predetermined size so that the target processing portion TP of the predetermined size remains at the time point when the removal of the first portion WTP1 and the second portion WTP2 is completed.

[0168] The control unit 4 may set a predetermined size based on the size of the target processing portion TP. The size of the target processing portion TP may include a distance (in other words, a length or a depth) Dis1 along the direction of the wall portion WP of the target processing portion TP (see Figure 8 (a)). For example, the control unit 4 may set the predetermined size in such a manner that a predetermined ratio of the size of the target processing part TP becomes the predetermined size. For example, the control unit 4 may set the predetermined size in such a manner that a size equivalent to 20% of the size of the target processing part TP, or a size equivalent to more than 20% of the size of the target processing part TP, becomes the predetermined size. In this case, the processing system SYS may process the workpiece W in such a manner that a target processing part TP having a size equivalent to more than 20% of the original size remains at the time point when the removal of the first part WTP1 and the second part WTP2 is completed. For example, the control unit 4 may also set the predetermined size in such a manner that a size equivalent to 10% of the size of the target processing part TP, or a size equivalent to more than 10% of the size of the target processing part TP, becomes the predetermined size. In this case, the processing system SYS may process the workpiece W in such a manner that a target processing part TP having a size equivalent to more than 10% of the original size remains at the time point when the removal of the first part WTP1 and the second part WTP2 is completed. For example, the control unit 4 may set the predetermined size so that a size equivalent to 5% of the size of the target processed portion TP or a size equivalent to 5% or more of the size of the target processed portion TP becomes the predetermined size. In this case, the machining system SYS may machine the workpiece W so that the target processed portion TP having a size equivalent to 5% or more of the original size remains at the time point when the removal of the first portion WTP1 and the second portion WTP2 is completed.

[0169] On this basis, the processing system SYS can, under the control of the control unit 4, perform a first removal processing action of irradiating at least a portion of the first portion WTP1 with the processing light EL to remove at least a portion of the first portion WTP1, and a second removal processing action of irradiating at least a portion of the second portion WTP2 with the processing light EL to remove at least a portion of the second portion WTP2, thereby removing the first portion WTP1 and the second portion WTP2 in the target processing portion TP. In particular, the processing system SYS can remove the first portion WTP1 and the second portion WTP2 in the target processing portion TP by alternately repeating the first removal processing action and the second removal processing action. Then, after the removal of the first portion WTP1 and the second portion WTP2 is completed, the processing system SYS can perform a third removal processing action of irradiating at least a portion of the third portion WTP3 with the processing light EL to remove at least a portion of the third portion WTP3, thereby removing the third portion WTP3 in the target processing portion TP. In particular, the processing system SYS can remove the third portion WTP3 in the target processing portion TP by repeating the third removal processing action. Thus, in the first variation, the processing system SYS can remove the target processing portion TP by first removing the first portion WTP1 and the second portion WTP2 and then removing the third portion WTP3.

[0170] In the case where the first portion WTP1 and the second portion WTP2 are removed first and then the third portion WTP3 is removed, the possibility of the non-target processing portion NP being accidentally processed is reduced compared to the case where the first portion WTP1 and the second portion WTP2 are removed without setting the third portion WTP3. Fig. 20 (a) and Fig. 20 (b) Explain the reasons.

[0171] Fig. 20 (a) is a cross-sectional view of the workpiece W without setting the third portion WTP3 and removing the first portion WTP1 and the second portion WTP2. When the wall portion WP is formed, at least one of the first portion WTP1 and the second portion WTP2 may be accidentally processed at a timing different from the timing at which at least one of the first portion WTP1 and the second portion WTP2 is originally processed. As an example, Fig. 20As shown in (a), if the processing light irradiated to the first part WTP1 adjacent to the wall part WP is reflected by the exposed wall surface WS, the processing light EL that should be irradiated to a part of the first part WTP1 may irradiate the second part WTP2 (or other parts of the first part WTP1, and the same is true in the first variation below). As a result, the second part WTP2 may be processed at a time different from the time when the second part WTP2 was originally to be processed. In this case, the second part WTP2 will be further processed at the time when the second part WTP2 was originally to be processed, so the processing amount of the second part WTP2 may be greater than the originally expected processing amount. As a result, there will be a technical problem that the non-target processing part NP located below the second part WTP2 may be accidentally processed.

[0172] In particular, the smaller the thickness of the remaining first portion WTP1 and the second portion WTP2, the higher the possibility that the non-target processing portion NP is accidentally processed. That is, if the thickness of the remaining first portion WTP1 and the second portion WTP2 is lower than the fixed size, the non-target processing portion NP may be accidentally processed. On the contrary, if the thickness of the remaining first portion WTP1 and the second portion WTP2 is higher than the fixed size, even if the first portion WTP1 or the second portion WTP2 is processed at a different timing from the timing when the first portion WTP1 or the second portion WTP2 is originally to be processed, the non-target processing portion NP located below the first portion WTP1 or the second portion WTP2 is less likely to be accidentally processed.

[0173] In the first variation, in consideration of this technical problem, a third portion WTP3 is set in addition to the first portion WTP1 and the second portion WTP2. Therefore, a cross-sectional view of the workpiece W having the first portion WTP1, the second portion WTP2, and the third portion WTP3 is shown. Fig. 20 As shown in (b) of FIG. 1 , even if the first portion WTP1 or the second portion WTP2 is processed at a timing different from the timing at which the first portion WTP1 or the second portion WTP2 is originally to be processed, the possibility that the non-target processing portion NP is accidentally processed is low. The reason for this is that Fig. 20 As shown in (b), there is a third part WTP3 as a part of the target processing part TP below the first part WTP1 or the second part WTP2. Taking this technical effect into consideration, the control unit 4 may also set the size of the third part WTP3 in the traveling direction of the processing light EL (in this case, the height and thickness in the z-axis direction) in such a way that the third part WTP3 has a size that can achieve the following situation: even if the first part WTP1 or the second part WTP2 is processed at a timing different from the timing when the first part WTP1 or the second part WTP2 is originally to be processed, the non-target processing part NP will not be processed.

[0174] The processing conditions for removing the third portion WTP3 may be the same as the processing conditions for removing the second portion WTP2 described above. For example, the light conditions of the processing light EL irradiated to the third portion WTP3 for removing the third portion WTP3 may be the same as the light conditions of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the flux of the processing light EL irradiated to the third portion WTP3 for removing the third portion WTP3 may also be the same as the flux of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the flux of the processing light EL irradiated to the third portion WTP3 for removing the third portion WTP3 may also be lower than the flux of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1. In this case, compared with the case where the flux of the processing light EL irradiated to the third portion WTP3 is higher than the flux of the processing light EL irradiated to the second portion WTP2, the possibility of the non-target processing portion NP being accidentally processed by the processing light EL reflected by the wall surface WS of the wall portion WP is reduced.

[0175] The processing conditions for removing a part of the third part WTP and the processing conditions for removing another part of the third part WTP may be different. For example, the processing conditions for processing the part of the third part WTP adjacent to the non-target processing part NP and the processing conditions for processing the remaining part of the third part WTP may be different. As an example, the processing conditions for processing the part of the third part WTP adjacent to the non-target processing part NP may be the same as the processing conditions for removing the first part WTP1 described above. The processing conditions for processing the remaining part of the third part WTP may be the same as the processing conditions for removing the second part WTP2 described above. In this case, compared with the case where the processing conditions for processing the part of the third part WTP adjacent to the non-target processing part NP and the processing conditions for processing the remaining part of the third part WTP are the same, the processing system SYS can more appropriately form the wall portion WP extending along the Z-axis direction (i.e., vertically standing). However, the processing conditions for processing the part of the third part WTP adjacent to the non-target processing part NP and the processing conditions for processing the remaining part of the third part WTP may also be the same. In this case, the processing system SYS can more appropriately form the bottom surface Sb having the desired flatness than the case where the processing conditions for processing the portion of the third portion WTP adjacent to the non-target processing portion NP and the processing conditions for processing the remaining portion of the third portion WTP are different. Therefore, in the case where forming the bottom surface Sb having the desired flatness is given priority over forming the wall portion WP extending in the Z-axis direction (i.e., vertically rising), the same processing conditions can be used to process the portion of the third portion WTP adjacent to the non-target processing portion NP and the processing conditions for processing the remaining portion of the third portion WTP. In the case where forming the wall portion WP extending in the Z-axis direction (i.e., vertically rising) is given priority over forming the bottom surface Sb having the desired flatness, the same processing conditions can be used to process the portion of the third portion WTP adjacent to the non-target processing portion NP and the processing conditions for processing the remaining portion of the third portion WTP. In the case where forming the wall portion WP extending in the Z-axis direction (i.e., vertically rising) is given priority over forming the bottom surface Sb having the desired flatness, different processing conditions can be used to process the portion of the third portion WTP adjacent to the non-target processing portion NP and the processing conditions for processing the remaining portion of the third portion WTP.

[0176] The processing system SYS can measure the third part WTP3 (i.e., a part of the remaining target processing part TP) using the measuring unit 2 after the removal of the first part WTP1 and the second part WTP2 is completed. For example, the processing system SYS can measure the shape of the third part WTP3 (i.e., the remaining target processing part TP). Thereafter, the processing system SYS can perform a third removal processing action of removing at least a part of the third part WTP3 based on the measurement result of the third part WTP3 (i.e., the remaining target processing part TP). As a result, the processing system SYS can perform the third removal processing action with high precision.

[0177] For example, the machining system SYS can measure the shape of the third portion WTP3 (i.e., the remaining target machining portion TP) even after starting the third removal machining action of removing at least a portion of the third portion WTP3. Thereafter, the machining system SYS can continue the third removal machining action based on the measurement result of the third portion WTP3 (i.e., the remaining target machining portion TP). As a result, the machining system SYS can perform the third removal machining action with high accuracy.

[0178] In addition, the smaller the size ratio of the third portion WTP3 to the target processing portion TP before removal (for example, the ratio of 20%, 10% or 5% as an example), the smaller the size of the third portion WTP3 to be removed by the third removal processing action. The smaller the size of the third portion WTP3 to be removed by the third removal processing action, the less frequent the measurement of the shape of the third portion WTP3 after the start of the third removal processing action. Therefore, the productivity of the processing system SYS is improved.

[0179] On the contrary, the larger the size ratio of the third portion WTP3 to the target processing portion TP before removal (for example, the ratio of 20%, 10% or 5% as an example), the more likely the productivity of the processing system SYS will deteriorate. However, the larger the size ratio of the third portion WTP3 to the target processing portion TP before removal, the lower the possibility that the non-target processing portion NP is accidentally processed by the processing light EL reflected by the wall surface WS of the wall portion WP.

[0180] Therefore, the size of the third part WTP3 (e.g., the size ratio of the third part WTP3 to the target processing part TP before removal) can be automatically set by the control unit 4 based on the balance between the two effects of improving the production capacity of the processing system SYS and reducing the possibility of the non-target processing part NP being accidentally processed. Alternatively, the size of the third part WTP3 (e.g., the size ratio of the third part WTP3 to the target processing part TP before removal) can also be manually set by the operator of the processing system SYS.

[0181] On the other hand, during the execution of the first and second removal processing operations for removing the first and second portions WTP1 and WTP2, the processing system SYS may measure the remaining target processing portion TP (e.g., at least a portion of the first and second portions WTP2) without using the measurement unit 2. Therefore, the productivity associated with the processing of the workpiece W is improved.

[0182] However, during at least a portion of the period in which the first and second removal processing actions are performed to remove the first portion WTP1 and the second portion WTP2, the processing system SYS may measure the remaining target processing portion TP (e.g., at least a portion of the first portion WTP1 and the second portion WTP2) using the measuring unit 2. In this case, the processing system SYS may remove at least a portion of the first portion WTP1 and the second portion WTP2 based on the measurement result of at least a portion of the first portion WTP1 and the second portion WTP2 (i.e., the remaining target processing portion TP).

[0183] In addition, the processing system SYS may also perform the action described in the first variation example for a purpose different from the purpose of preventing the non-target processing part NP from being processed beyond the preset range as the first part WTP1 is processed. For example, the processing system SYS may perform the action described in the first variation example for the purpose of improving the aesthetics of the bottom surface Sb of the non-target processing part NP. As an example, the processing system SYS may perform the action described in the first variation example for the purpose of reducing the color unevenness of the bottom surface Sb. As another example, the processing system SYS may also perform the action described in the first variation example for the purpose of reducing the surface roughness of the bottom surface Sb.

[0184] (4-2) Second Variation

[0185] During the first and second removal operations for forming the wall portion WP, the exposed surface Se exposed by removing a portion of the target processing portion TP may be adhered to the excess material generated from the workpiece W (particularly the target processing portion TP) by the first and second removal operations. The excess material may include a material (so-called debris) generated by melting, evaporation, or sublimation of a portion of the workpiece W (particularly the target processing portion TP).

[0186] In this case, if Fig.21 As shown, the processing system SYS can irradiate the exposed surface Se with the processing light EL in order to remove the excess material attached to the exposed surface Se from the exposed surface Se. For example, the processing system SYS can irradiate the exposed surface Se with the processing light EL. As a result, the excess material attached to the exposed surface Se is melted, evaporated, or sublimated by the processing light EL, and thus the excess material is removed from the exposed surface Se.

[0187] The processing system SYS may irradiate the exposed surface Se with the processing light EL after the target processing portion TP is removed. Alternatively, the processing system SYS may irradiate the exposed surface Se with the processing light EL before the target processing portion TP is removed. In this case, the processing system SYS may irradiate the exposed surface Se with the processing light EL at the stage where the target processing portion TP is removed by a predetermined amount.

[0188] The processing conditions for removing the excess material from the exposed surface Se may be the same as the processing conditions for removing the second portion WTP2 described above. For example, the light conditions of the processing light EL irradiated to the exposed surface Se for removing the excess material may be the same as the light conditions of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the flux of the processing light EL irradiated to the exposed surface Se for removing the excess material may be the same as the flux of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the flux of the processing light EL irradiated to the exposed surface Se for removing the excess material may be lower than the flux of the processing light EL irradiated to the first portion WTP1 for removing the first portion WTP1. In this case, the possibility of the exposed surface Se being accidentally processed by the processing light EL used to remove the excess material is reduced compared to the case where the flux of the processing light EL irradiated to the exposed surface Se is higher than the flux of the processing light EL irradiated to the second portion WTP2.

[0189] Alternatively, the processing conditions for removing the excess material from the exposed surface Se may also be different from the processing conditions for removing the second portion WTP2 described above. For example, the flux of the processing light EL irradiated to the exposed surface Se for removing the excess material may be lower than the flux of the processing light EL irradiated to the second portion WTP2 for removing the second portion WTP2. For example, the intensity of the processing light EL irradiated to the exposed surface Se may also be lower than the intensity of the processing light EL irradiated to the second portion WTP2. In this case as well, the possibility of the exposed surface Se being accidentally processed by the processing light EL used to remove the excess material is reduced compared to the case where the flux of the processing light EL irradiated to the exposed surface Se is higher than the flux of the processing light EL irradiated to the second portion WTP2.

[0190] The processing system SYS can remove the excess material from the exposed surface Se using the non-thermal processing principle. For example, the processing system SYS can irradiate the exposed surface Se with processing light EL including pulse light having a light emission time of less than picoseconds or less than femtoseconds, thereby removing the excess material from the exposed surface Se. In this case, compared with the case where the excess material is removed from the exposed surface Se using the thermal processing principle, the heat generated by the energy of the processing light EL has less influence on the exposed surface Se. Therefore, the processing system SYS can remove the excess material from the exposed surface Se while reducing the influence of the heat generated by the energy of the processing light EL on the exposed surface Se.

[0191] The processing system SYS can measure the exposed surface Se using the measuring unit 2 before irradiating the processing light EL to the exposed surface Se. Afterwards, the control unit 4 can calculate the position where the excess material is attached to the exposed surface Se based on the measurement result of the exposed surface Se. As an example, the control unit 4 can calculate the difference between the actual shape of the exposed surface Se shown by the measurement result of the measuring unit 2 and the designed shape of the exposed surface Se, thereby calculating the position where the excess material is attached to the exposed surface Se. Alternatively, the user of the processing system SYS can input information related to the position where the excess material is attached to the exposed surface Se into the processing system SYS. Afterwards, the control unit 4 can control the processing unit 1 and the platform unit 3 to irradiate the processing light EL to the position where the excess material is attached to the exposed surface Se. That is, the control unit 4 can control the processing unit 1 and the platform unit 3 to irradiate the processing light EL to the position calculated as the position where the excess material is attached to the exposed surface Se. As a result, the processing system SYS can appropriately remove the excess material attached to the exposed surface Se.

[0192] The processing system SYS can rotate the stage 32 around a rotation axis extending in a direction intersecting the traveling direction of the processing light EL by the stage driving system 33 before or after irradiating the exposed surface Se with the processing light EL. Fig.21 In the example shown, since the traveling direction of the processing light EL is the Z-axis direction, the processing system SYS can rotate the platform 32 around at least one of the rotation axis along the X-axis and the rotation axis along the Y-axis using the platform driving system 33. In particular, the processing system SYS can rotate the platform 33 so that the exposed surface Se becomes a surface intersecting the traveling direction of the processing light EL. Thereafter, the processing system SYS can irradiate the exposed surface Se with the processing light EL. As a result, the processing system SYS can easily irradiate the exposed surface Se with the processing light EL compared to the case where the exposed surface Se is a surface along the traveling direction of the processing light EL. Therefore, the processing system SYS can appropriately remove the excess material from the exposed surface Se.

[0193] The processing system SYS may also use the head driving system 13 to rotate the processing head 12 around a rotation axis extending in a direction intersecting the traveling direction of the processing light EL before irradiating the exposed surface Se with the processing light EL or after starting to irradiate the exposed surface Se with the processing light EL. Fig.21 In the example shown, since the traveling direction of the processing light EL is the Z-axis direction, the processing system SYS can rotate the processing head 12 around at least one of the rotation axis along the X-axis and the rotation axis along the Y-axis using the head driving system 13. In particular, the processing system SYS can rotate the processing head 12 so that the exposed surface Se becomes a surface intersecting the traveling direction of the processing light EL. Thereafter, the processing system SYS can irradiate the exposed surface Se with the processing light EL. As a result, the processing system SYS can easily irradiate the exposed surface Se with the processing light EL compared to the case where the exposed surface Se is a surface along the traveling direction of the processing light EL. Therefore, the processing system SYS can appropriately remove the excess material from the exposed surface Se.

[0194] The processing system SYS can irradiate the exposed surface Se with the processing light EL while supplying gas to the exposed surface Se using a gas supply device (not shown). In this case, the excess material removed from the exposed surface Se by the processing light EL is blown away from the exposed surface Se by the gas. Therefore, the possibility of the excess material removed from the exposed surface Se by the processing light EL adhering to the exposed surface Se again is reduced. Thus, the processing system SYS can appropriately remove the excess material adhering to the exposed surface Se.

[0195] (4-3) Third Modification Example

[0196] In the third variation, when the processing system SYS is to remove the adjacent portion AP adjacent to the non-target processing portion NP in the target processing portion TP under the control of the control unit 4, the operation mode of the processing system SYS can also be set to the desired mode. In addition, the first portion WTP1 of the target processing portion TP is adjacent to the non-target processing portion NP. Therefore, the first portion WTP1 of the target processing portion TP is a specific example of the adjacent portion AP.

[0197] Specifically, the machining system SYS may set the operation mode of the machining system SYS to the first mode. Alternatively, the machining system SYS may set the operation mode of the machining system SYS to the second mode different from the first mode. The machining system SYS may switch the operation mode of the machining system SYS between the first mode and the second mode.

[0198] The first mode and the second mode can be distinguished based on the position of the beam spot BS formed by the processing light EL on the surface of the workpiece W relative to the boundary BD between the target processing part TP and the non-target processing part NP. That is, the first mode and the second mode can be distinguished based on the positional relationship between the boundary BD and the beam spot BS. The first mode and the second mode can be different in that the positional relationship between the boundary BD and the beam spot BS in the first mode is different from the positional relationship between the boundary BD and the beam spot BS in the second mode.

[0199] In addition, the beam spot BS formed by the processing light EL on the surface of the workpiece W may represent an area determined based on the intensity distribution of the processing light EL on the surface of the workpiece W. For example, the beam spot BS may represent an area irradiated by a light component having a predetermined intensity or more in the processing light EL. That is, the beam spot BS may represent an area that is at least a portion of the area irradiated by the processing light EL and is irradiated by a light component having a predetermined intensity or more in the processing light EL. In other words, the beam spot BS may represent an area in the beam spot BS that satisfies the condition that the intensity of the light component of the processing light EL is greater than the predetermined intensity.

[0200] The predetermined intensity may be set based on the intensity of the processing light EL that can perform the removal processing of the workpiece W. For example, the predetermined intensity may be set by the control unit 4 based on the intensity of the processing light EL that can perform the removal processing of the workpiece W. Alternatively, the predetermined intensity may be set by the user of the processing system SYS based on the intensity of the processing light EL that can perform the removal processing of the workpiece W. Alternatively, the predetermined intensity may be set in advance as a fixed value based on the intensity of the processing light EL that can perform the removal processing of the workpiece W.

[0201] The predetermined intensity may also be set to the intensity of the processing light EL that can perform the removal process on the workpiece W. For example, the predetermined intensity may be set to a threshold value that can distinguish, based on the intensity of the processing light EL, the intensity of the processing light EL that is strong enough to perform the removal process on the workpiece W and the intensity of the processing light EL that is not strong enough to perform the removal process on the workpiece W. That is, the predetermined intensity may be set to a threshold value that can distinguish, based on the intensity of the processing light EL, the intensity of the processing light EL that is strong enough to perform the removal process on the workpiece W and the intensity of the processing light EL that is too weak to perform the removal process on the workpiece W. Alternatively, the predetermined intensity may also be set based on the peak intensity in the intensity distribution of the processing light EL. For example, the predetermined intensity may be set to an intensity obtained by multiplying the peak intensity by K (in addition, K is a variable representing a real number greater than 0 and less than 1). As an example of the variable K, in the case where the processing EL is a Gaussian beam, 1 / e 2 (In addition, e represents a natural base) or 0.135. As another example of the variable K, when the processing EL is a Gaussian beam, 0.135 can be cited.

[0202] An example of the positional relationship between the boundary BD and the beam spot BS in the first mode is shown in FIG. Fig. 22 As shown. Fig. 22 As shown, the first mode may be an operation mode in which the workpiece W is processed in a state in which the center of the beam spot BS is located on the boundary BD on the surface of the workpiece W.

[0203] In order to set the operation mode of the machining system SYS to the first mode, the control unit 4 may generate first machining control data for machining the workpiece W in a state where the center of the beam spot BS is located on the boundary BD. For example, the control unit 4 may generate first machining control data for controlling the center position of the beam spot BS so that the center of the beam spot BS moves along the boundary BD on the surface of the workpiece W. Specifically, the control unit 4 may generate first machining control data including first machining path data for controlling the center position of the beam spot BS so that the center of the beam spot BS moves along the first machining path on the boundary BD on the surface of the workpiece W. As a result, the machining system SYS can machine the workpiece W in the first mode based on the first machining control data generated by the control unit 4.

[0204] On the other hand, an example of the positional relationship between the boundary BD and the beam spot BS in the second mode is shown in FIG. Fig.23 As shown. Fig.23 As shown, the second mode may be an operation mode for processing the workpiece W with the center of the beam spot BS on the surface of the workpiece W away from the boundary BD. Specifically, the second mode may be an operation mode for processing the workpiece W with the center of the beam spot BS on the surface of the workpiece W away from the boundary BD by a predetermined distance.

[0205] In particular, the second mode may be an operation mode in which the workpiece W is processed in a state in which the center of the beam spot BS is moved away from the boundary BD toward the inner side of the target processing portion TP on the surface of the workpiece W. In this case, Fig.23 As shown, the second mode may be an operation mode in which the workpiece W is processed in a state where the center of the beam spot BS is only located inside the target processing portion TP away from the boundary BD. The second mode may also be an operation mode in which the workpiece W is processed in a state where the center of the beam spot BS is only located inside the boundary BD. That is, the second mode may also be an operation mode in which the workpiece W is processed in a state where the center of the beam spot BS is not located on the boundary BD. The second mode may also be an operation mode in which the workpiece W is processed in a state where the center of the beam spot BS is not located on the non-target processing portion NP outside the boundary BD.

[0206] The predetermined distance may be set based on the size of the beam spot BS. For example, the predetermined distance may be set by the control unit 4 based on the size of the beam spot BS. Alternatively, the predetermined distance may be set by a user of the processing system SYS based on the size of the beam spot BS. Alternatively, the predetermined distance may be set in advance as a fixed value based on the size of the beam spot BS.

[0207] The “size of the beam spot BS” may refer to the size of the beam spot BS in the plane intersecting the traveling direction of the processing light EL. The “size of the beam spot BS” may refer to the size of the beam spot BS in the surface of the workpiece W intersecting the traveling direction of the processing light EL. When the beam spot BS is circular, the size of the beam spot BS may be typically the diameter or radius of the beam spot BS. When the beam spot BS is elliptical, the size of the beam spot BS may be typically the length of the major axis or minor axis of the beam spot BS.

[0208] In addition, the “size of beam spot BS” may also mean the distance between two points where the intensity of the processing light EL is the predetermined intensity. The “size of beam spot BS” may also mean the distance between two points where the intensity of the processing light EL is half of the peak intensity. The “size of beam spot BS” may also mean the diameter of a circle centered at the center of gravity of the intensity distribution of the processing light EL and containing a predetermined ratio of beam energy.

[0209] As an example, Fig.23 As shown in FIG. 1 , the predetermined distance may be a distance equivalent to the radius of the beam spot BS. That is, the predetermined distance may be a distance equivalent to half the diameter of the beam spot BS. In this case, Fig.23 As shown, the second mode may be an operation mode in which the workpiece W is processed in a state where the beam spot BS itself is only located inside the target processing portion TP away from the boundary BD. The second mode may also be an operation mode in which the workpiece W is processed in a state where the beam spot BS itself is only located inside the boundary BD. That is, the second mode may also be an operation mode in which the workpiece W is processed in a state where the beam spot BS itself is not located on the boundary BD. The second mode may also be an operation mode in which the workpiece W is processed in a state where the beam spot BS itself is not located on the non-target processing portion NP outside the boundary BD.

[0210] In addition, as described above, the beam spot BS can represent an area irradiated by light components of the processing light EL having an intensity greater than or equal to a predetermined intensity. Therefore, the state of "the beam spot BS is located only on the inner side of the target processing portion TP away from the boundary BD" can represent a state in which the area irradiated by light components of the processing light EL having an intensity greater than or equal to a predetermined intensity is located only on the inner side of the target processing portion TP away from the boundary BD. In this case, light components of the processing light EL that do not reach the predetermined intensity can be irradiated to the boundary BD. Light components of the processing light EL that do not reach the predetermined intensity can also be irradiated to the non-target processing portion NP outside the boundary BD. Regardless of which case it is, it remains unchanged that light components of the processing light EL having an intensity greater than or equal to a predetermined intensity are irradiated only to the inner side of the target processing portion TP away from the boundary BD, so it can be said that the beam spot BS is located only on the inner side of the target processing portion TP away from the boundary BD.

[0211] In order to set the operation mode of the processing system SYS to the second mode, the control unit 4 may generate second processing control data for processing the workpiece W in a state where the center of the beam spot BS is away from the boundary BD. For example, the control unit 4 may generate second processing control data for controlling the center position of the beam spot BS so that the center of the beam spot BS moves on the surface of the workpiece W through a position away from the boundary BD. Specifically, the control unit 4 may generate second processing control data including second processing path data for controlling the center position of the beam spot BS so that the center of the beam spot BS moves on the surface of the workpiece W along a second processing path away from the boundary BD. For example, the control unit 4 may also generate second processing control data including second processing path data for controlling the center position of the beam spot BS so that the center of the beam spot BS is located only inside the target processing portion TP away from the boundary BD. For example, the control unit 4 may also generate second processing control data including second processing path data for controlling the center position of the beam spot BS so that the center of the beam spot BS is located only inside the target processing portion TP away from the boundary BD. In other words, the control unit 4 may also generate second processing control data including second processing path data for controlling the center position of the beam spot BS so that the center of the beam spot BS is located outside the boundary BD (i.e., the non-target processing portion NP). As a result, the machining system SYS can machine the workpiece W in the second mode based on the second machining control data generated by the control unit 4 .

[0212] In this case, typically, the volume of the portion removed from the workpiece W based on the second machining control data may be smaller than the volume of the portion removed from the workpiece W based on the first machining control data. That is, the volume of the portion removed from the workpiece W indicated by the second machining control data may be smaller than the volume of the portion removed from the workpiece W indicated by the first machining control data.

[0213] Alternatively, the machining system SYS may also machine the workpiece W in the second mode based on the first machining control data for setting the operation mode of the machining system SYS to the first mode. Specifically, as described above, the first machining control data is machining control data for moving the center of the beam spot BS along the first machining path on the boundary BD. In this case, the control unit 4 may change (in other words, correct) the first machining path so that the first machining path moves away from the boundary BD to the inside of the target machining portion TP, thereby generating the changed first machining path as the second machining path. The control unit 4 may also change the first machining control data so that the first machining path moves away from the boundary BD to the inside of the target machining portion TP, thereby generating the changed first machining control data as the second machining control data. As a result, the machining system SYS can machine the workpiece W in the second mode based on the first machining path changed by the control unit 4 (i.e., the second machining path generated by the control unit 4 from the first machining path). That is, the machining system SYS can machine the workpiece W in the second mode based on the first machining control data changed by the control unit 4 (i.e., the second machining control data generated by the control unit 4 from the first machining control data).

[0214] When the machining system SYS machines the workpiece W in the second mode based on the first machining control data, as shown in FIG. 1 which shows an example of the configuration of the machining system SYS in the third variation example. Fig.24 As shown, the machining system SYS may include an acquisition unit 41, an output unit 42, and a control unit 43 as part of the control unit 4. In addition, the machining system SYS may include at least one of the acquisition unit 41, the output unit 42, and the control unit 43 as a device different from the control unit 4.

[0215] The acquisition unit 41 can acquire the first processing control data. For example, the acquisition unit 41 can acquire the first processing control data by newly generating the first processing control data. For example, the acquisition unit 41 can also acquire the first processing control data by reading the first processing control data stored in the storage device of the control unit 4. For example, the acquisition unit 41 can also acquire the first processing control data from an external device that generates the first processing control data.

[0216] The acquisition unit 41 may further acquire information related to the processing light EL. For example, the acquisition unit 41 may acquire information related to the size of the beam spot BS as at least a part of the information related to the processing light EL.

[0217] The output unit 42 may change the first processing control data acquired by the acquisition unit 41 to generate the second processing control data. In this case, the output unit 42 may change the first processing control data based on the information related to the processing light EL acquired by the acquisition unit 41. For example, when the acquisition unit 41 acquires information related to the size of the beam spot BS as at least a part of the information related to the processing light EL, the output unit 42 may change the first processing control data in such a way that the first processing path indicated by the first processing control data is separated from the boundary BD by a predetermined distance based on the size of the beam spot BS. Thereafter, the output unit 42 may output the changed first processing control data to the control unit 43 as the second processing control data.

[0218] The control unit 43 may control at least one of the machining unit 1 and the stage unit 3 to machine the workpiece W based on the second machining control data (ie, the changed first machining control data) output from the output unit 42 .

[0219] The operation mode of the machining system SYS may be automatically selected (in other words, determined or set) by the control unit 4. For example, the control unit 4 may select either the first or second mode as the operation mode of the machining system SYS based on the characteristics (e.g., type) of the workpiece W to be machined by the machining system SYS. In this case, the control unit 4 may select either the first or second mode as the operation mode of the machining system SYS based on the characteristics (e.g., type) of the workpiece W using information that specifies the relationship between the characteristics of the workpiece W and the operation mode.

[0220] The operation mode of the machining system SYS may also be manually selected (in other words, determined or set) by a user of the machining system SYS. For example, the user may select either the first mode or the second mode as the operation mode of the machining system SYS based on the characteristics (e.g., type) of the workpiece W to be machined by the machining system SYS.

[0221] As described above, in the third variation, the processing system SYS can remove the adjacent portion AP (eg, the first portion WTP1 ) adjacent to the non-target processing portion NP in the target processing portion TP after setting the operation mode of the processing system SYS to the first mode or the second mode.

[0222] Here, if Fig. 22 As shown in FIG. 1 , the first mode is an operation mode in which the center of the beam spot BS is located on the boundary BD. Therefore, the beam spot BS may be formed on the non-target processing part NP outside the boundary BD. As a result, the non-target processing part NP that should not be processed may be accidentally processed. Specifically, as shown in FIG. 1 , the workpiece W processed by the processing system SYS in the first mode Fig.25As shown in (a), a part of the non-target processing portion NP that should not be processed and remains as the wall portion WP may be accidentally removed. As a result, the size of the remaining wall portion WP may become different from the designed size.

[0223] On the other hand, Fig.23 As shown in FIG. 1 , the second mode is an operation mode in which the center of the beam spot BS moves away from the boundary BD toward the inner side of the target processing part TP. Therefore, when the processing system SYS processes the workpiece W in the second mode, the area of ​​the light spot portion of the beam spot BS formed in the non-target processing part NP outside the boundary BD is reduced compared to when the processing system SYS processes the workpiece W in the first mode. Depending on the specific situation, the beam spot BS may not be formed in the non-target processing part NP outside the boundary BD. As a result, as shown in FIG. 1 , the workpiece W processed by the processing system SYS in the second mode is Fig.25 As shown in (b), when the machining system SYS processes the workpiece W in the second mode, the volume of the portion of the workpiece W that is removed by the removal machining is reduced compared to the case where the machining system SYS processes the workpiece W in the first mode. Therefore, the volume of the portion that is accidentally removed in the non-target machining portion NP that should not be machined is reduced. Depending on the specific circumstances, the non-target machining portion NP that should not be machined may not be removed. Therefore, when the machining system SYS processes the workpiece W in the second mode, the deviation between the size of the remaining wall portion WP and the design size is reduced compared to the case where the machining system SYS processes the workpiece W in the first mode. Depending on the specific circumstances, the size of the remaining wall portion WP may be consistent with the design size. Therefore, the machining system SYS can appropriately remove the target machining portion TP in such a way that the non-target machining portion NP that should not be machined remains as the wall portion WP.

[0224] However, when the machining system SYS processes the workpiece W in the second mode, the degree of overlap of the beam spots BS changes during the process of scanning the machining light EL along the boundary BD at the adjacent portion AP (especially near the boundary BD), compared to the case where the machining system SYS processes the workpiece W in the first mode. As a result, the energy transmitted from the machining light EL to the workpiece W may be insufficient during the process of scanning the machining light EL along the boundary BD at the adjacent portion AP (especially near the boundary BD). As a result, the angle θ3 (see FIG. 1 ) between the upper surface Su of the non-target machining portion NP and the wall portion WP may be accidentally formed. Figure 7) is smaller than the desired angle of the wall portion WP. For example, it is possible that when a wall portion WP extending along the Z-axis direction (i.e., standing vertically) is to be formed, a wall portion WP inclined relative to the Z-axis direction (i.e., not standing vertically) is accidentally formed. In this case as well, as described above, the target processing portion TP is divided into a first portion WTP1 and a second portion WTP2, and a first removal processing action of removing at least a portion of the first portion WTP1 and a second removal processing action of removing at least a portion of the second portion WTP2 are repeated alternately, whereby the processing system SYS can appropriately form an angle θ3 (refer to Figure 7 ) is a wall portion WP of a desired angle. For example, the processing system SYS can appropriately form a wall portion WP extending along the Z-axis direction (ie, standing vertically) when a wall portion WP extending along the Z-axis direction (ie, standing vertically) is to be formed.

[0225] (4-4) Other Variations

[0226] The processing system SYS may form the wall portion WP by rotating the processing head 12 around at least one of the rotation axis along the X-axis and the rotation axis along the Y-axis using the head driving system 13. The processing system SYS may form the wall portion WP by rotating the platform 32 around at least one of the rotation axis along the X-axis and the rotation axis along the Y-axis using the platform driving system 33. That is, the processing system SYS may form the wall portion WP by tilting the platform 32 relative to the processing head 12. In this case, the processing system SYS may form the wall portion WP without dividing the target processing portion TP into the first portion WTP1 and the second portion WTP2. However, when the processing system SYS tilts the platform 32 relative to the processing head 12, the wall portion WP may also be formed without dividing the target processing portion TP into the first portion WTP1 and the second portion WTP2.

[0227] In the above description, the processing system SYS processes the workpiece W by irradiating the processing light EL to the workpiece W. However, the processing system SYS may also process the workpiece W by irradiating the workpiece W with an arbitrary energy beam. In this case, the processing system SYS may have a beam source capable of irradiating an arbitrary energy beam in addition to or instead of the processing light source 11. As an example of the arbitrary energy beam, at least one of a charged particle beam and an electromagnetic wave may be cited. As an example of the charged particle beam, at least one of an electron beam and an ion beam may be cited.

[0228] (5) Notes

[0229] Regarding the above-described embodiment, the following additional notes will be disclosed.

[0230] [Note 1]

[0231] A processing system comprising:

[0232] A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and

[0233] A control device controls the processing device to remove the target processing portion in the removal processing; and

[0234] The control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of the first portion by irradiating the energy beam with a first flux to the first portion of the target processing portion, and the second action is to remove at least a portion of the second portion by irradiating the energy beam with a second flux lower than the first flux to the second portion of the target processing portion;

[0235] The first portion is adjacent to the second portion along a first direction intersecting a traveling direction of the energy beam.

[0236] [Note 2]

[0237] The processing system according to Supplement 1, wherein

[0238] The first portion is adjacent to a non-target processing portion of the object along the first direction,

[0239] The second portion is adjacent to the first portion along the first direction and is located farther from the non-target processing portion than the first portion.

[0240] [Note 3]

[0241] The processing system according to Supplement 2, wherein

[0242] The non-target processing portion includes a wall portion extending along the traveling direction.

[0243] [Note 4]

[0244] The processing system according to Supplement 2, wherein

[0245] The non-target processing portion includes at least the upper surface and the wall portion, and

[0246] An angle formed between the upper portion of the surface and the wall portion is greater than 82 degrees.

[0247] [Note 5]

[0248] The processing system according to Supplement 2, wherein

[0249] The non-target processing portion includes at least the upper surface and the wall portion, and

[0250] An angle formed between the upper portion of the surface and the wall portion is greater than 78 degrees.

[0251] [Note 6]

[0252] The processing system according to Supplement 2, wherein

[0253] The non-target processing portion includes at least the upper surface and the wall portion, and

[0254] The angle formed between the upper surface and the wall portion is approximately 90 degrees.

[0255] [Note 7]

[0256] The processing system according to Supplement 2, wherein

[0257] The non-target processing portion at least includes a wall portion, and

[0258] An angle formed between an axis along a traveling direction of the processing light and the wall portion is 8 degrees or less.

[0259] [Note 8]

[0260] The processing system according to Supplement 2, wherein

[0261] The non-target processing portion at least includes a wall portion, and

[0262] An angle formed by an axis along the traveling direction of the processing light and the wall portion is 12 degrees or less.

[0263] [Note 9]

[0264] The processing system according to Supplement 2, wherein

[0265] The non-target processing portion at least includes a wall portion, and

[0266] The angle formed between the upper surface and the wall portion is substantially 0 degrees.

[0267] [Note 10]

[0268] A processing system according to any one of Notes 3 to 9, wherein

[0269] The wall portion is substantially parallel to the direction of travel.

[0270] [Note 11]

[0271] A processing system according to any one of Notes 1 to 3 and 10, wherein

[0272] The control device determines the first portion based on the shape of the target processing portion.

[0273] [Note 12]

[0274] A processing system according to any one of Notes 4 to 6, wherein

[0275] The control device determines the first portion based on the shape of the target processing portion.

[0276] [Note 13]

[0277] The processing system according to Supplement 12, wherein

[0278] The shape of the target processing portion includes a distance along the wall portion of the target processing portion, or an angle between the upper portion of the surface and the wall portion.

[0279] [Note 14]

[0280] A processing system according to any one of Notes 1 to 13, wherein

[0281] A third action is performed to remove at least a portion of a third portion in the target processing portion by irradiating the energy beam with a third flux lower than the first flux to the third portion, the third portion being adjacent to the first portion along the traveling direction.

[0282] [Note 15]

[0283] A processing system according to any one of Notes 1 to 14, wherein

[0284] The first action includes removing a first removal portion that is a part of the first portion by scanning the energy beam a plurality of times in a direction intersecting the traveling direction.

[0285] The second action includes an action of removing a second removal portion that is a part of the second portion by scanning the energy beam a plurality of times in a direction intersecting the traveling direction.

[0286] [Note 16]

[0287] A processing system according to any one of Notes 1 to 15, wherein

[0288] The first action includes an action of removing a first removal portion that is a part of the first portion N times (N is a variable representing an integer greater than or equal to 1),

[0289] The second action includes an action of removing a second removal portion that is a part of the second portion N times.

[0290] [Note 17]

[0291] A processing system according to any one of Notes 1 to 16, wherein

[0292] The first action includes an action of removing a first removal portion that is a part of the first portion N times (N is a variable representing an integer greater than or equal to 1),

[0293] The second operation includes an operation of removing a second removal portion that is a part of the second portion M times (M is a variable representing an integer greater than or equal to 1).

[0294] [Note 18]

[0295] A processing system according to Supplement 17, wherein

[0296] The thickness of the first removed portion removed by scanning the energy beam once in a direction intersecting the traveling direction in the first action is different from the thickness of the second removed portion removed by scanning the energy beam once in a direction intersecting the traveling direction in the second action.

[0297] [Note 19]

[0298] A processing system according to any one of Supplementary Notes 1 to 18, further comprising a position changing device capable of changing the positional relationship between the irradiation position of the energy beam on the surface of the object and the object; and

[0299] The control device controls the position changing device to change the positional relationship along an extending direction of a boundary between the target processing portion and a non-target processing portion of the object on the surface of the first portion during at least a portion of a period in which the first action is executed.

[0300] [Note 20]

[0301] A processing system according to any one of Notes 1 to 19, wherein

[0302] The processing device includes a light source for emitting the energy beam, and

[0303] The control device can change the flux of the energy beam by controlling the light source.

[0304] [Note 21]

[0305] A processing system according to any one of Notes 1 to 20, wherein

[0306] The processing device includes an optical system capable of changing the spot size of the energy beam on the surface of the object; and

[0307] The control device can change the flux of the energy beam by controlling the optical system.

[0308] [Note 22]

[0309] A processing system according to any one of Notes 3 to 10, wherein

[0310] After the target processing portion is removed, a normal line of an exposed surface of the wall portion exposed by the removal of the target processing portion intersects with a traveling direction of the energy beam.

[0311] [Note 23]

[0312] A processing system according to any one of Notes 1 to 22, wherein

[0313] The control device removes at least a portion of the target processing portion by alternately repeating the first operation and the second operation.

[0314] [Note 24]

[0315] A processing system according to any one of Notes 1 to 23, wherein

[0316] The control device controls the processing device to repeat the second action to remove at least another part of the target processing portion after alternately repeating the first action and the second action.

[0317] [Note 25]

[0318] The processing system according to Supplement 23 or 24,

[0319] A measuring device is further provided, which measures another part of the target processing part after removing a part of the target processing part by alternately repeating the first action and the second action; and

[0320] The control device controls the processing device to repeat the second action and remove another part of the target processing portion based on the measurement result measured by the measuring device.

[0321] [Note 26]

[0322] A processing system according to any one of Notes 3 to 10, wherein

[0323] The control device controls the processing device so as to irradiate the energy beam to at least a portion of an exposed surface of the wall portion exposed by removing the target processing portion.

[0324] [Note 27]

[0325] A processing system according to Supplement 26, wherein

[0326] The intensity of the energy beam irradiated to at least a portion of the exposed surface is lower than the intensity of the energy beam irradiated to the target processing portion.

[0327] [Note 28]

[0328] A processing system according to Note 26 or 27, wherein

[0329] The processing device removes the deposited matter attached to the exposed surface from the exposed surface by irradiating at least a portion of the exposed surface with the energy beam.

[0330] [Note 29]

[0331] A processing system according to Supplement 28, wherein

[0332] The attached matter includes debris generated from the target processing portion by irradiating the energy beam to the target processing portion.

[0333] [Note 30]

[0334] A processing system comprising:

[0335] A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and

[0336] A control device controls the processing device to remove the target processing portion in the removal processing; and

[0337] The control device is capable of switching between a first mode and a second mode. The first mode is to perform removal processing of a portion of the target processing portion adjacent to a non-target processing portion of the object with the center of the beam spot of the energy beam located at a boundary between the target processing portion and the non-target processing portion on the surface of the object, and the second mode is to perform removal processing of a portion of the target processing portion adjacent to the non-target processing portion with the center of the beam spot of the energy beam located away from the boundary and inside the target processing portion on the surface of the object.

[0338] [Note 31]

[0339] A processing system according to Note 30, wherein

[0340] In the second mode, the control device performs the removal process of the portion adjacent to the non-target process portion in a state where the center of the beam spot is located a predetermined distance away from the boundary on the surface of the object.

[0341] [Note 32]

[0342] A processing system according to Note 30 or 31, wherein

[0343] The control device moves the center of the beam spot along a first path away from the boundary by a predetermined distance on the surface of the object in the removal process of the portion adjacent to the non-target process portion in the second mode.

[0344] [Note 33]

[0345] A processing system according to any one of Notes 30 to 32, wherein

[0346] The control device moves the center of the beam spot along a second path on the boundary on the surface of the object in the removal process of the portion adjacent to the non-target process portion in the first mode.

[0347] [Note 34]

[0348] A processing system according to any one of Notes 30 to 33, wherein

[0349] In the second mode, the control device controls the center position of the beam spot of the energy beam so that the beam spot is not located at the non-target processing portion.

[0350] [Note 35]

[0351] A processing system according to Note 31 or 32, wherein

[0352] The predetermined distance is set based on the size of the beam spot on the surface of the object.

[0353] [Note 36]

[0354] A processing system according to Note 35, wherein

[0355] The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

[0356] [Note 37]

[0357] A processing system according to Note 35 or 36, wherein

[0358] The predetermined distance is half of the diameter of the beam spot on the surface of the object.

[0359] [Note 38]

[0360] A processing system comprising:

[0361] A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and

[0362] A control device controls the processing device to remove the target processing portion in the removal processing; and

[0363] The control device performs the removal process in a state where the center of the beam spot of the energy beam is located only inside the target processing portion away from the boundary between the target processing portion and the non-target processing portion on the surface of the object.

[0364] [Note 39]

[0365] A processing system according to Supplement 38, wherein

[0366] The control device performs the removal process in a state where the center of the beam spot is located at a position away from the boundary by a predetermined distance on the surface of the object.

[0367] [Note 40]

[0368] A processing system according to Note 38 or 39, wherein

[0369] The control device moves the center of the beam spot on the surface of the object along a first path that is a predetermined distance away from the boundary.

[0370] [Note 41]

[0371] A processing system according to any one of Notes 38 to 40, wherein

[0372] The control device controls the center position of the beam spot of the energy beam so that the beam spot is not located at the non-target processing portion.

[0373] [Note 42]

[0374] A processing system according to Note 39 or 40, wherein

[0375] The predetermined distance is set based on the size of the beam spot on the surface of the object.

[0376] [Note 43]

[0377] A processing system according to Note 42, wherein

[0378] The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

[0379] [Note 44]

[0380] A processing system according to Note 42 or 43, wherein

[0381] The predetermined distance is half of the diameter of the beam spot on the surface of the object.

[0382] [Note 45]

[0383] A processing system comprising:

[0384] A processing device capable of performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object;

[0385] An acquisition unit, which acquires processing data related to a target processing portion in the removal processing and information related to the energy beam;

[0386] a calculation unit that changes the processing data based on the information related to the energy beam and outputs the changed processing data; and

[0387] a control device that controls the processing device to remove a portion of the object based on the changed processing data; and

[0388] The removal process is performed in a state where the center of the beam spot of the energy beam is located only inside the target process portion.

[0389] [Note 46]

[0390] The processing system according to any one of Supplementary Notes 38 to 45, further comprising:

[0391] an acquisition unit, which acquires processing data related to the target processing part in the removal processing and information related to the energy beam; and

[0392] a computing unit that changes the processing data based on the information related to the energy beam and outputs the changed processing data; and

[0393] The control device controls the processing device to remove a portion of the object based on the changed processing data.

[0394] [Note 47]

[0395] A processing system according to Note 45 or 46, wherein

[0396] The volume of the removed portion indicated by the changed processing data is smaller than the volume of the removed portion indicated by the processing data.

[0397] [Note 48]

[0398] A processing system according to any one of Notes 45 to 47, wherein

[0399] The calculation unit changes the processing data so that the removal processing is performed in a state where the center of the beam spot is located on the surface of the object at a predetermined distance away from the boundary between the target processing part and the non-target processing part, and the non-target processing part is adjacent to the target processing part.

[0400] [Note 49]

[0401] A processing system according to any one of Notes 45 to 48, wherein

[0402] The calculation unit changes the processing data so that the center of the beam spot moves on the surface of the object along a first path that is a predetermined distance away from a boundary between the target processing portion and a non-target processing portion adjacent to the target processing portion.

[0403] [Note 50]

[0404] A processing system according to any one of Notes 45 to 49, wherein

[0405] The calculation unit changes the processing data so that the beam spot of the energy beam is not located in a non-target processing portion adjacent to the target processing portion.

[0406] [Note 51]

[0407] A processing system according to Note 48 or 49, wherein

[0408] The predetermined distance is set based on the size of the beam spot on the surface of the object.

[0409] [Note 52]

[0410] A processing system according to Note 51, wherein

[0411] The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

[0412] [Note 53]

[0413] A processing system according to Note 51 or 52, wherein

[0414] The predetermined distance is half of the diameter of the beam spot on the surface of the object.

[0415] [Note 54]

[0416] A processing system comprising:

[0417] A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and

[0418] A control device controls the processing device to remove the target processing portion in the removal processing; and

[0419] The control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of the first portion by irradiating the energy beam to the first portion of the target processing portion under a first condition, and the second action is to remove at least a portion of the second portion by irradiating the energy beam to the second portion of the target processing portion under a second condition different from the first condition;

[0420] The first portion is adjacent to the second portion.

[0421] [Note 55]

[0422] A processing system comprising:

[0423] A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and

[0424] A control device controls the processing device to remove the target processing portion in the removal processing; and

[0425] The center of the energy beam is located only inside the target processing portion.

[0426] [Note 56]

[0427] A processing system comprising:

[0428] A processing device capable of performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object;

[0429] an acquiring unit, which acquires changed processing data obtained by changing processing data related to the target processing portion in the removal processing; and

[0430] a control device that controls the processing device to remove a portion of the object based on the changed processing data; and

[0431] The center of the energy beam is located only inside the target processing portion.

[0432] [Note 57]

[0433] A processing method for performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and comprising:

[0434] irradiating a first portion of a target processing portion within the removal process with the energy beam of a first flux, thereby removing at least a portion of the first portion; and

[0435] irradiating a second portion of the target processing portion with the energy beam having a second flux lower than the first flux, thereby removing at least a portion of the second portion;

[0436] The first portion is adjacent to the second portion along a direction intersecting a traveling direction of the energy beam, that is, a first direction.

[0437] [Note 58]

[0438] A processing method for performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and comprising:

[0439] irradiating the energy beam to a first portion of the target processing portion in the removal process under a first condition, thereby removing at least a portion of the first portion;

[0440] irradiating a second portion of the target processing portion with the energy beam under a second condition different from the first condition, thereby removing at least a portion of the second portion;

[0441] The first portion is adjacent to the second portion.

[0442] [Note 59]

[0443] A processing method, performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and

[0444] The method comprises the steps of switching the processing mode of the removal processing between a first mode and a second mode,

[0445] The first mode is a mode in which the removal process is performed in a state in which the center of the beam spot of the energy beam is located on the surface of the object at the boundary between a target process portion and a non-target process portion in the removal process, and the non-target process portion is adjacent to the target process portion;

[0446] The second mode is a mode in which the removal process is performed in a state in which the center of the beam spot of the energy beam is located inside the target process portion on the surface of the object.

[0447] [Note 60]

[0448] A processing method, performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and

[0449] The removal process is performed in a state where the center of the beam spot of the energy beam is located just inside a target processing portion in the removal process on the surface of the object.

[0450] [Note 61]

[0451] A processing method for performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and comprising:

[0452] Acquiring processing data related to the target processing part in the removal processing and information related to the energy beam;

[0453] Based on the processing data and the information related to the energy beam, the processing data is changed, and the changed processing data is output; and

[0454] removing a portion of the object based on the changed processing data;

[0455] The center of the beam spot of the energy beam is located only inside the target processing portion.

[0456] [Note 62]

[0457] A processing method for performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; and comprising:

[0458] Acquiring changed processing data obtained by changing processing data related to the target processing portion in the removal processing; and

[0459] removing a portion of the object based on the changed processing data;

[0460] The center of the energy beam is located only inside the target processing portion.

[0461] The elements of each embodiment described above may be appropriately combined. Some of the elements of each embodiment described above may not be used. The elements of each embodiment described above may be appropriately replaced with the elements of other embodiments. In addition, as long as the law permits, all public bulletins and U.S. patents related to the device, etc. cited in each embodiment described above may be cited as part of the content of this document.

[0462] The present invention can be appropriately modified within the scope of the gist or concept of the invention that can be read from the entire claims and the specification, and the processing system and processing method obtained by the above-mentioned modification are also included in the technical concept of the present invention.

[0463] Explanation of symbols

[0464] SYS: Processing system

[0465] 1: Processing unit

[0466] 12: Processing head

[0467] 2: Measurement unit

[0468] 3: Platform unit

[0469] 4: Control unit

[0470] EL: Processing light

[0471] W: Workpiece

[0472] TP: Target Processing Part

[0473] WTP1: Part 1

[0474] WTP2: Part 2

[0475] WTP3: Part 3

[0476] NP: Non-target processing part

[0477] BD: Junction

[0478] WP:Wall

[0479] WS: wall

[0480] Se: Show your face

Claims

1. A processing system comprising: A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and A control device controls the processing device to remove the target processing portion in the removal processing; and The control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of the first portion by irradiating the energy beam with a first flux to the first portion of the target processing portion, and the second action is to remove at least a portion of the second portion by irradiating the energy beam with a second flux lower than the first flux to the second portion of the target processing portion; The first portion is adjacent to the second portion along a first direction intersecting a traveling direction of the energy beam.

2. The processing system according to claim 1, wherein The first portion is adjacent to a non-target processing portion of the object along the first direction, The second portion is adjacent to the first portion along the first direction and is located farther from the non-target processing portion than the first portion.

3. The processing system according to claim 2, wherein The non-target processing portion includes a wall portion extending along the traveling direction.

4. The processing system according to claim 2, wherein The non-target processing portion includes at least the upper surface and the wall portion, and An angle formed between the upper portion of the surface and the wall portion is greater than 82 degrees.

5. The processing system according to claim 2, wherein The non-target processing portion includes at least the upper surface and the wall portion, and An angle formed between the upper portion of the surface and the wall portion is greater than 78 degrees.

6. The processing system according to claim 2, wherein The non-target processing portion includes at least the upper surface and the wall portion, and The angle formed between the upper surface and the wall portion is approximately 90 degrees.

7. The processing system according to claim 2, wherein The non-target processing portion at least includes a wall portion, and An angle formed by an axis along the traveling direction of the processing light and the wall portion is 8 degrees or less.

8. The processing system according to claim 2, wherein The non-target processing portion at least includes a wall portion, and An angle formed by an axis along the traveling direction of the processing light and the wall portion is 12 degrees or less.

9. The processing system according to claim 2, wherein The non-target processing portion at least includes a wall portion, and The angle formed between the upper surface and the wall portion is substantially 0 degrees.

10. The processing system according to any one of claims 3 to 9, wherein The wall portion is substantially parallel to the direction of travel.

11. The processing system according to any one of claims 1 to 3 and 10, wherein The control device determines the first portion based on the shape of the target processing portion.

12. The processing system according to any one of claims 4 to 6, wherein The control device determines the first portion based on the shape of the target processing portion.

13. The processing system according to claim 12, wherein The shape of the target processing portion includes a distance along the wall portion of the target processing portion, or an angle between the upper portion of the surface and the wall portion.

14. The processing system according to any one of claims 1 to 13, wherein A third action is performed, wherein the third action is to remove at least a portion of a third portion in the target processing portion by irradiating the energy beam with a third flux lower than the first flux to the third portion, the third portion being adjacent to the first portion in the traveling direction.

15. The processing system according to any one of claims 1 to 14, wherein The first action includes removing a first removal portion that is a part of the first portion by scanning the energy beam a plurality of times in a direction intersecting the traveling direction. The second action includes an action of removing a second removal portion that is a part of the second portion by scanning the energy beam a plurality of times in a direction intersecting the traveling direction.

16. The processing system according to any one of claims 1 to 15, wherein The first action includes an action of removing a first removal portion that is a part of the first portion N times (N is a variable representing an integer greater than or equal to 1), The second action includes an action of removing a second removal portion that is a part of the second portion N times.

17. A processing system according to any one of claims 1 to 16, wherein The first action includes an action of removing a first removal portion that is a part of the first portion N times (N is a variable representing an integer greater than or equal to 1), The second operation includes an operation of removing a second removal portion that is a part of the second portion M times (M is a variable representing an integer greater than or equal to 1).

18. The processing system according to claim 17, wherein The thickness of the first removal portion removed by scanning the energy beam once in a direction intersecting the traveling direction in the first action is different from the thickness of the second removal portion removed by scanning the energy beam once in a direction intersecting the traveling direction in the second action.

19. The processing system according to any one of claims 1 to 18, further comprising a position changing device capable of changing the positional relationship between the irradiation position of the energy beam on the surface of the object and the object; and The control device controls the position changing device to change the positional relationship along an extending direction of a boundary between the target processing portion and a non-target processing portion of the object on the surface of the first portion during at least a portion of a period in which the first action is executed.

20. The processing system according to any one of claims 1 to 19, wherein The processing device includes a light source for emitting the energy beam, and The control device can change the flux of the energy beam by controlling the light source.

21. A processing system according to any one of claims 1 to 20, wherein The processing device includes an optical system capable of changing the spot size of the energy beam on the surface of the object; and The control device can change the flux of the energy beam by controlling the optical system.

22. A processing system according to any one of claims 3 to 10, wherein After the target processing portion is removed, a normal line of an exposed surface of the wall portion exposed by the removal of the target processing portion intersects with a traveling direction of the energy beam.

23. A processing system according to any one of claims 1 to 22, wherein The control device removes at least a portion of the target processing portion by alternately repeating the first operation and the second operation.

24. A processing system according to any one of claims 1 to 23, wherein The control device controls the processing device to repeat the second action to remove at least another part of the target processing portion after alternately repeating the first action and the second action.

25. The processing system according to claim 23 or 24, further comprising a measuring device that measures another part of the target processing part after removing a part of the target processing part by alternately repeating the first action and the second action; and The control device controls the processing device to repeat the second action and remove another part of the target processing portion based on the measurement result measured by the measuring device.

26. A processing system according to any one of claims 3 to 10, wherein The control device controls the processing device so as to irradiate the energy beam to at least a portion of an exposed surface of the wall portion exposed by removing the target processing portion.

27. The processing system of claim 26, wherein The intensity of the energy beam irradiated to at least a portion of the exposed surface is lower than the intensity of the energy beam irradiated to the target processing portion.

28. A processing system according to claim 26 or 27, wherein The processing device removes the deposited matter attached to the exposed surface from the exposed surface by irradiating at least a portion of the exposed surface with the energy beam.

29. The processing system of claim 28, wherein The attached matter includes debris generated from the target processing portion by irradiating the energy beam to the target processing portion.

30. A processing system comprising: A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and A control device controls the processing device to remove the target processing portion in the removal processing; and The control device is capable of switching between a first mode and a second mode. In the first mode, removal processing of a portion of the target processing portion adjacent to a non-target processing portion of the object is performed in a state where the center of the beam spot of the energy beam is located at the boundary between the target processing portion and the non-target processing portion on the surface of the object, and in the second mode, removal processing of a portion of the target processing portion adjacent to the non-target processing portion is performed in a state where the center of the beam spot of the energy beam is located away from the boundary and inside the target processing portion on the surface of the object.

31. The processing system of claim 30, wherein In the second mode, the control device performs the removal process of the portion adjacent to the non-target process portion in a state where the center of the beam spot is located a predetermined distance away from the boundary on the surface of the object.

32. A processing system according to claim 30 or 31, wherein The control device moves the center of the beam spot along a first path away from the boundary by a predetermined distance on the surface of the object in the removal process of the portion adjacent to the non-target process portion in the second mode.

33. A processing system according to any one of claims 30 to 32, wherein The control device moves the center of the beam spot along a second path on the boundary on the surface of the object in the removal process of the portion adjacent to the non-target process portion in the first mode.

34. A processing system according to any one of claims 30 to 33, wherein In the second mode, the control device controls the center position of the beam spot of the energy beam so that the beam spot is not located at the non-target processing portion.

35. A processing system according to claim 31 or 32, wherein The predetermined distance is set based on the size of the beam spot on the surface of the object.

36. The processing system of claim 35, wherein The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

37. A processing system according to claim 35 or 36, wherein The predetermined distance is half of the diameter of the beam spot on the surface of the object.

38. A processing system comprising: A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and A control device controls the processing device to remove the target processing portion in the removal processing; and The control device performs the removal process in a state where the center of the beam spot of the energy beam is located only inside the target processing portion away from the boundary between the target processing portion and the non-target processing portion on the surface of the object.

39. The processing system of claim 38, wherein The control device performs the removal process in a state where the center of the beam spot is located at a position away from the boundary by a predetermined distance on the surface of the object.

40. A processing system according to claim 38 or 39, wherein The control device moves the center of the beam spot on the surface of the object along a first path that is a predetermined distance away from the boundary.

41. A processing system according to any one of claims 38 to 40, wherein The control device controls the center position of the beam spot of the energy beam so that the beam spot is not located at the non-target processing portion.

42. A processing system according to claim 39 or 40, wherein The predetermined distance is set based on the size of the beam spot on the surface of the object.

43. The processing system of claim 42, wherein The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

44. A processing system according to claim 42 or 43, wherein The predetermined distance is half of the diameter of the beam spot on the surface of the object.

45. A processing system comprising: A processing device capable of performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; An acquisition unit, which acquires processing data related to a target processing portion in the removal processing and information related to the energy beam; A calculation unit that changes the processing data based on the information related to the energy beam and outputs the changed processing data; and a control device that controls the processing device to remove a portion of the object based on the changed processing data; and The removal process is performed in a state where the center of the beam spot of the energy beam is located only inside the target process portion.

46. ​​The processing system according to any one of claims 38 to 45, further comprising: an acquisition unit, which acquires processing data related to the target processing part in the removal processing and information related to the energy beam; and a computing unit that changes the processing data based on the information related to the energy beam and outputs the changed processing data; and The control device controls the processing device to remove a portion of the object based on the changed processing data.

47. A processing system according to claim 45 or 46, wherein The volume of the removed portion indicated by the changed processing data is smaller than the volume of the removed portion indicated by the processing data.

48. A processing system according to any one of claims 45 to 47, wherein The calculation unit changes the processing data so that the removal processing is performed in a state where the center of the beam spot is located on the surface of the object at a predetermined distance away from the boundary between the target processing part and the non-target processing part, and the non-target processing part is adjacent to the target processing part.

49. A processing system according to any one of claims 45 to 48, wherein The calculation unit changes the processing data so that the center of the beam spot moves on the surface of the object along a first path that is a predetermined distance away from a boundary between the target processing portion and a non-target processing portion adjacent to the target processing portion.

50. A processing system according to any one of claims 45 to 49, wherein The calculation unit changes the processing data so that the beam spot of the energy beam is not located in a non-target processing portion adjacent to the target processing portion.

51. A processing system according to claim 48 or 49, wherein The predetermined distance is set based on the size of the beam spot on the surface of the object.

52. The processing system of claim 51, wherein The size of the beam spot is 1 / e the intensity of the beam from the center of the energy beam 2 is related to the location.

53. A processing system according to claim 51 or 52, wherein The predetermined distance is half of the diameter of the beam spot on the surface of the object.

54. A processing system comprising: A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and A control device controls the processing device to remove the target processing portion in the removal processing; and The control device controls the processing device to perform a first action and a second action, wherein the first action is to remove at least a portion of the first portion by irradiating the energy beam to the first portion of the target processing portion under a first condition, and the second action is to remove at least a portion of the second portion by irradiating the energy beam to the second portion of the target processing portion under a second condition different from the first condition; The first portion is adjacent to the second portion.

55. A processing system comprising: A processing device capable of performing a removal process in which a portion of an object is removed by irradiating an energy beam to the object; and A control device controls the processing device to remove the target processing portion in the removal processing; and The center of the energy beam is located only inside the target processing portion.

56. A processing system comprising: A processing device capable of performing a removal process, wherein a portion of an object is removed by irradiating an energy beam to the object; an acquiring unit, which acquires changed processing data obtained by changing processing data related to the target processing portion in the removal processing; and a control device that controls the processing device to remove a portion of the object based on the changed processing data; and The center of the energy beam is located only inside the target processing portion.

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