Liquid crystal element, lighting device, and vehicle lamp system

Abstract

The purpose of the present invention is to prevent generation of dark lines or the like in a liquid crystal element and decrease in light resistance. A liquid crystal element includes: a first substrate, a second substrate, and a liquid crystal layer; a plurality of pixel electrodes provided on the first substrate side using a transparent conductive film and including pixel electrodes having different shapes in plan view; a plurality of thin film switching elements which are provided on the first substrate side and are in one-to-one correspondence with the pixel electrodes; a plurality of first wirings which are provided on the first substrate side using a transparent conductive film and which connect the pixel electrodes and the thin-film switching elements to each other; and a counter electrode provided on the second substrate side and disposed so as to overlap each of the pixel electrodes in plan view, each of the pixel electrodes being all disposed in a first region irradiated with image-forming light, and each of the thin-film switching elements being disposed in a second region. The second region is adjacent to the first region in plan view and is not irradiated with the image forming light.

Description

Technical Field

[0001] The present disclosure relates to a liquid crystal element, a lighting device, and a vehicle lighting system. Background Art

[0002] Japanese Patent Publication No. 2006-58730 (Patent Document 1) describes an active matrix driven liquid crystal display device in which pixels including organic TFTs are arranged at the intersections of orthogonal gate lines and data lines, wherein source electrodes, drain electrodes, auxiliary capacitor electrodes, etc. are formed of transparent conductive materials.

[0003] However, in this liquid crystal display device, the aperture ratio is improved to a certain extent by making the auxiliary capacitor electrode transparent, but since the source electrode, drain electrode and other parts are parts that cannot contribute to image display even if they are made transparent, these parts can always be in a dark state. The parts that produce such a dark state significantly produce dark lines and dark spots in the use of using particularly strong light for image formation, so it is not preferred. In addition, each organic TFT is arranged adjacent to each pixel electrode, and these organic TFTs are also irradiated with light, so in the use of using particularly strong light for image formation, the light resistance may also be reduced.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2006-58730 Summary of the invention

[0007] Problems to be solved by the invention

[0008] One of the objects of a specific embodiment of the present disclosure is to provide a technology capable of preventing the generation of dark lines and the like in a liquid crystal element for use in image formation using strong light and preventing a decrease in light resistance.

[0009] Means for solving problems

[0010] [1] A liquid crystal element of one embodiment of the present invention includes: (a) a first substrate and a second substrate, which are arranged so that one side of the substrate faces each other; (b) a liquid crystal layer, which is arranged between the first substrate and the second substrate; (c) a plurality of pixel electrodes, which are arranged on the first substrate side using a transparent conductive film and include pixel electrodes with different shapes when viewed from above; (d) a plurality of thin film switching elements, which are arranged on the first substrate side and correspond to each of the pixel electrodes one by one; (e) a plurality of first wirings, which are arranged on the first substrate side using a transparent conductive film and connect each of the pixel electrodes to each of the thin film switching elements; and (f) a counter electrode, which is arranged on the second substrate side and is arranged to overlap with each of the pixel electrodes when viewed from above, (g) each of the pixel electrodes is arranged in a first area irradiated with image forming light, and (h) each of the thin film switching elements is arranged in a second area, which is adjacent to the first area when viewed from above and is not irradiated with the image forming light.

[0011] [2] A liquid crystal element according to one embodiment of the present disclosure comprises: (a) a first substrate and a second substrate, which are arranged so that one side of the substrate faces the other; (b) a liquid crystal layer, which is arranged between the first substrate and the second substrate; (c) a plurality of pixel electrodes, which are arranged on the first substrate side using a transparent conductive film and include pixel electrodes having different shapes when viewed from above; (d) a plurality of thin film switch elements, which are arranged on the first substrate side and correspond to each of the pixel electrodes one by one; (e) a plurality of first wirings, which are arranged on the first substrate side using a transparent conductive film and connect each of the pixel electrodes to each of the thin film switch elements; and (f) a counter electrode, which is arranged on the second substrate side and is arranged so as to overlap with each of the pixel electrodes when viewed from above; (g) each of the thin film switch elements has a plurality of first thin film switch elements and a plurality of second thin film switch elements, at least each of the first thin film switch elements being formed using an organic semiconductor; (h) each of the pixel electrodes and each of the first switch elements are all arranged in a first region irradiated with image forming light; and (i) each of the second thin film switch elements is arranged in a second region, which is adjacent to the first region when viewed from above and is not irradiated with the image forming light.

[0012] [3] An illumination device according to one embodiment of the present invention includes: (a) the liquid crystal element described in 1 or 2 above; (b) a light source; (c) a focusing portion that focuses light emitted from the light source as the image forming light and causes the image forming light to be incident on the liquid crystal element; (d) a pair of polarizing elements that are arranged opposite to each other with the liquid crystal element interposed therebetween; and (e) a lens that projects the light that has passed through the liquid crystal element.

[0013] [4] A vehicle lighting system according to one embodiment of the present invention includes: (a) a vehicle lighting device configured using the lighting device of claim 3; (b) a sensor configured to detect an object existing around the vehicle; and (c) a controller configured to control the operation of the liquid crystal element according to the condition of the object detected by the sensor.

[0014] According to the above configuration, it is possible to prevent the occurrence of dark lines and the reduction of light resistance in a liquid crystal element used for image formation using strong light or in a lighting device using the liquid crystal element. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 (A)~ Figure 1 (C) is a partial cross-sectional view showing the structure of the liquid crystal element according to the first embodiment.

[0016] Figure 2 It is a plan view showing the structure of electrodes and wirings of the liquid crystal element according to the first embodiment.

[0017] Figure 3 This is a plan view showing the structure of wiring of the liquid crystal element according to the first embodiment.

[0018] Figure 4 It is a plan view for explaining a region where light is irradiated to a liquid crystal element and a position where a sealing member is provided.

[0019] Figure 5 It is a plan view showing the structure of electrodes and wirings of a liquid crystal element according to the second embodiment.

[0020] Figure 6 (A)~ Figure 6 (F) is a diagram for explaining a manufacturing method for forming a thin film transistor using an inorganic semiconductor and a thin film transistor using an organic semiconductor in a mixed manner.

[0021] Figure 7 It is a plan view showing the structure of electrodes and wirings of a liquid crystal element according to the third embodiment.

[0022] Figure 8 (A)~ Figure 8 (B) is a partial cross-sectional view showing the structure of the first substrate of the liquid crystal element according to the third embodiment.

[0023] Fig. 9 (A) and Fig. 9 (B) is a diagram showing a configuration of a vehicle lighting system according to an embodiment that is configured using the liquid crystal element according to the above-described embodiment. DETAILED DESCRIPTION

[0024] (First Embodiment)

[0025] Figure 1 (A)~ Figure 1 (C) is a partial cross-sectional view showing the structure of the liquid crystal element according to the first embodiment. Figure 2 It is a plan view showing the structure of electrodes and wirings of the liquid crystal element according to the first embodiment. Figure 3 1 is a plan view showing the structure of the wiring of the liquid crystal element of the first embodiment. Figure 1 (A) corresponds to Figure 2 The aa line section shown, Figure 1 (B) corresponds to Figure 2 The bb line cross section shown, Figure 1 (C) corresponds to Figure 2 The cc line cross section is shown.

[0026] Figure 1 (A)~ Figure 1 The liquid crystal element 100 of the first embodiment shown in (C) has as main components: a first substrate 1 and a second substrate 2 arranged opposite to each other with a liquid crystal layer 5 between them; an insulating layer (insulating film) 3 arranged on a surface of the first substrate 1 on the liquid crystal layer 5 side; an opposing electrode 4 arranged on a surface of the second substrate 2 on the liquid crystal layer 5 side; and a liquid crystal layer 5 arranged between each surface of the first substrate 1 and the second substrate 2.

[0027] The first substrate 1 and the second substrate 2 are light-transmitting substrates that are rectangular in plan view, for example, and are arranged opposite to each other. Spherical spacers (not shown) composed of, for example, a resin film are dispersed between the first substrate 1 and the second substrate 2, and the substrate gap is maintained at a desired size (for example, several μm). In addition, instead of the spherical spacers, a columnar body composed of a resin or the like may be provided on the first substrate 1 side or the second substrate 2 side and used as a spacer.

[0028] The insulating layer 3 is arranged on one side of the first substrate 1 to cover the plurality of lower wirings 13a to 13c, the lower wirings 14a to 14i, and the plurality of inter-pixel electrodes 15a to 15h provided on the one side. The insulating film 3 is a film for achieving electrical insulation between the lower wirings 13a and the like and the pixel electrodes 10a to 10j and the wirings 11a to 11p. As the insulating film 3, for example, an organic insulating film such as a siloxane insulating film, an acrylic film, or an inorganic insulating film such as a SiNx film or a SiOx film can be used.

[0029] The counter electrode 4 is provided on one side of the second substrate 2, at least in a range overlapping with each pixel electrode 10a when viewed from above. In addition, the counter electrode 4 may be divided into a plurality of parts. The counter electrode 4 is formed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). In the present embodiment, the pixel portions are respectively formed in the portions of each pixel electrode 10a and the like that are opposed to the counter electrode 4.

[0030] The liquid crystal layer 5 is provided between the first substrate 1 and the second substrate 2. The liquid crystal layer 5 is formed of, for example, a nematic liquid crystal material having fluidity. The liquid crystal layer 5 is formed of, for example, a liquid crystal material having negative dielectric constant anisotropy. The thickness of the liquid crystal layer 5 can be, for example, about 4 μm. The liquid crystal layer 5 is sealed by a sealant 6 (see Figure 4 ) is surrounded and protected from the outside. In addition, although not shown in the figure, alignment films are appropriately provided on the first substrate 1 and the second substrate 2, and the initial alignment state of the liquid crystal layer 5 is defined by these alignment films.

[0031] In the first embodiment, the layer including the plurality of lower wirings 13a to 13c, the lower wirings 14a to 14i, and the plurality of inter-pixel electrodes 15a to 15h and arranged on the side relatively close to the first substrate 1 corresponds to the "first layer", and the layer including the pixel electrodes 10a to 10j and the wirings 11a to 11p and arranged on the side relatively far from the first substrate 1 corresponds to the "second layer". The insulating layer 3 is provided between the first and second layers. In addition, the lower wirings 14a to 14i correspond to the "first wirings", the lower wirings 13a to 13c correspond to the "second wirings", and the wirings 11a to 11p correspond to the "third wirings".

[0032] The pixel electrodes 10a to 10j are provided on one side of the insulating layer 3 (the side close to the liquid crystal layer 5) on one side of the first substrate 1. Each pixel electrode 10a is formed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). Figure 2 As shown, the pixel electrodes 10 a to 10 j include pixel electrodes having mutually different planar shapes and are provided so as to be physically separated from each other.

[0033] The pixel electrode 10a has a rectangular shape that is long in the X direction (left-right direction) when viewed from above. Each pixel electrode 10b and 10c has a rectangular shape that is long in the X direction when viewed from above, and is arranged adjacent to each other in the X direction. The length of each pixel electrode 10b and 10c in the Y direction is substantially the same as the length of the pixel electrode 10a in the Y direction, and they have substantially the same shape when viewed from above.

[0034] The length of each pixel electrode 10d and 10e in the X direction is about 1 / 2 of the length of the pixel electrode 10a, and they are substantially the same shape when viewed from above. Each pixel electrode 10d and 10e is a rectangular shape that is longer in the Y direction when viewed from above, and is arranged at a position higher than each pixel electrode 10b and 10c in the figure, and is arranged with other pixel electrodes 10f, 10g, 10h, 10i, and 10j sandwiched between the two.

[0035] Each pixel electrode 10f, 10g is a right triangle shape that is longer in the X direction when viewed from above, and is arranged at a position higher than each pixel electrode 10b, 10c in the figure. The lengths in the X direction and the lengths in the Y direction of each pixel electrode 10f, 10g are equal to each other, and they are substantially the same shape when viewed from above, and are bilaterally symmetrical in the figure.

[0036] Each pixel electrode 10h, 10i is a pentagonal shape that is longer in the X direction when viewed from above, and is arranged at a position higher than each pixel electrode 10f, 10g in the figure. The length in the X direction and the length in the Y direction of each pixel electrode 10h, 10i are equal to each other, and they are substantially the same shape when viewed from above, and are bilaterally symmetrical in the figure.

[0037] The pixel electrode 10 j is in the shape of an isosceles triangle pointing downward in the figure when viewed from above, and is arranged to be surrounded by the pixel electrodes 10 f , 10 g , 10 h , and 10 i .

[0038] The wirings 11a to 11p are provided on one side of the insulating layer 3 (the side close to the liquid crystal layer 5) on one side of the first substrate 1. Each wiring 11a, etc. is formed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). Each wiring 11a, etc. is provided on the same layer as each pixel electrode 10a, etc.

[0039] Wiring 11a has a top view shape extending in the Y direction, and has a portion overlapping with semiconductor layers 12a, 12b, and 12c, respectively. Similarly, wiring 11e has a top view shape extending in the Y direction, and has a portion overlapping with semiconductor layers 12d, 12e, and 12f, respectively. Similarly, wiring 11i has a top view shape extending in the Y direction, and has a portion overlapping with semiconductor layers 12g, 12h, and 12i, respectively. Similarly, wiring 11n has a top view shape extending in the Y direction, and has a portion overlapping with semiconductor layer 12j. These portions are used as source / drain electrodes (input / output electrodes) in thin film transistors. Hereinafter, these portions are sometimes referred to as "source / drain electrodes".

[0040] The wiring 11b is connected to the pixel electrode 10a and has a portion overlapping with the semiconductor layer 12a. This portion functions as a source / drain electrode in the thin film transistor.

[0041] The semiconductor layer 12a is provided so as to overlap with the source / drain electrodes of the wiring 11a and the wiring 11b. A thin film transistor 7 is formed by including the source / drain electrodes and the semiconductor layer 12a, a portion of the lower wiring 13a described later that overlaps with the semiconductor layer 12a, i.e., a gate electrode, and an insulating layer 3 interposed between the wirings 11a and 11b and the lower wiring 13a. The cross-sectional structure of the thin film transistor 7 is similar to that of Figure 1 The same as shown in (A) (also the same in other thin film transistors 7 described below).

[0042] The semiconductor layer 12a has a relatively large channel width (the width of the region forming the channel region, the length in the Y direction in the figure) compared to other semiconductor layers 12b, etc. This is because the area of ​​the pixel electrode 10a connected to the thin film transistor 7 formed by including the semiconductor layer 12a is larger than that of other pixel electrodes 10b, etc., and therefore a higher driving capability needs to be ensured.

[0043] The semiconductor layer 12a and the other semiconductor layers 12b to 12j are preferably formed of organic semiconductors, for example. Organic semiconductors can be patterned by a simple method such as printing, and do not require a photolithography process using an expensive mask or a vacuum process, thereby reducing manufacturing costs.

[0044] The wiring 11c is connected to the pixel electrode 10b via the lower wiring 14a described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12b. The semiconductor layer 12b is arranged in a manner overlapping with the source / drain electrodes of the wiring 11a and the wiring 11c. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12b, a portion of the lower wiring 13b described later that overlaps with the semiconductor layer 12b, i.e., a gate electrode, and an insulating layer 3 between each of the wirings 11a, 11c and the lower wiring 13b.

[0045] The wiring 11d is connected to the pixel electrode 10d via the lower wiring 14b described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12c. The semiconductor layer 12c is provided so as to overlap with the source / drain electrodes of each of the wiring 11a and the wiring 11d. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12c, a portion of the lower wiring 13c described later that overlaps with the semiconductor layer 12c, i.e., a gate electrode, and an insulating layer 3 between each of the wirings 11a, 11d and the lower wiring 13c.

[0046] The wiring 11f is connected to the pixel electrode 10h via the lower wiring 14c described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12d. The semiconductor layer 12d is provided so as to overlap with the source / drain electrodes of the wiring 11e and the wiring 11f. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12d, the portion of the lower wiring 13a overlapping with the semiconductor layer 12d, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11e, 11f and the lower wiring 13a.

[0047] The wiring 11g is connected to the pixel electrode 10f via the lower wiring 14d described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12e. The semiconductor layer 12e is provided so as to overlap with the source / drain electrodes of each of the wiring 11e and the wiring 11g. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12e, the portion of the lower wiring 13b overlapping with the semiconductor layer 12e, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11e, 11g and the lower wiring 13b.

[0048] The wiring 11h is connected to the pixel electrode 10j via the lower wiring 14e described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12f. The semiconductor layer 12f is provided so as to overlap with the source / drain electrodes of each of the wiring 11e and the wiring 11h. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12f, the portion of the lower wiring 13c overlapping with the semiconductor layer 12f, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11e, 11h and the lower wiring 13c.

[0049] The wiring 11j is connected to the pixel electrode 10c via the lower wiring 14f described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12g. The semiconductor layer 12g is provided so as to overlap with the source / drain electrodes of each of the wiring 11i and the wiring 11j. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12g, the portion of the lower wiring 13a overlapping with the semiconductor layer 12g, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11i, 11j and the lower wiring 13a.

[0050] The wiring 11k is connected to the pixel electrode 10g via the lower wiring 14g described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12h. The semiconductor layer 12h is provided so as to overlap with the source / drain electrodes of each of the wiring 11i and the wiring 11k. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12h, the portion of the lower wiring 13b overlapping with the semiconductor layer 12h, i.e., the gate electrode, and the insulating layer 3 interposed between each of the wirings 11i, 11k and the lower wiring 13b.

[0051] The wiring 11m is connected to the pixel electrode 10i via the lower wiring 14h described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12i. The semiconductor layer 12i is provided so as to overlap with the source / drain electrodes of the wiring 11i and the wiring 11m. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12i, the portion of the lower wiring 13c overlapping with the semiconductor layer 12i, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11i, 11m and the lower wiring 13c.

[0052] The wiring 11p is connected to the pixel electrode 10e via the lower wiring 14i described later, and has a portion (source / drain electrode) overlapping with the semiconductor layer 12j. The semiconductor layer 12j is provided so as to overlap with the source / drain electrodes of each of the wiring 11n and the wiring 11p. A thin film transistor 7 is formed by including these source / drain electrodes and the semiconductor layer 12j, the portion of the lower wiring 13a overlapping with the semiconductor layer 12j, i.e., the gate electrode, and the insulating layer 3 between each of the wirings 11n, 11p and the lower wiring 13a.

[0053] The lower wiring 13a has a plan view shape extending in the X direction and has four portions extending in the Y direction. These four portions are respectively arranged to overlap with the semiconductor layers 12a, 12d, 12g, and 12j in a plan view, and function as gate electrodes (control electrodes) in each thin film transistor 7 composed of each semiconductor layer 12a and the like.

[0054] The lower layer wiring 13b has a plan view shape extending in the X direction and has three portions extending in the Y direction. These three portions are respectively arranged to overlap with the semiconductor layers 12b, 12e, and 12h in a plan view and function as gate electrodes in each thin film transistor 7 including each semiconductor layer 12b and the like.

[0055] The lower layer wiring 13c has a plan view shape extending in the X direction and has three portions extending in the Y direction. These three portions are respectively arranged to overlap with the semiconductor layers 12c, 12f, and 12i in a plan view and function as gate electrodes in each thin film transistor 7 composed of each semiconductor layer 12c and the like.

[0056] The lower wiring 14a has a top view shape extending along the Y direction in the figure, and electrically connects the wiring 11c to the pixel electrode 10b. The lower wiring 14a is physically and electrically connected to the wiring 11c and the pixel electrode 10b respectively via contact holes (schematically represented by circles in the figure, and the same applies hereinafter) provided in the insulating layer 3. In addition, the lower wiring 14a of the present embodiment is configured in a manner overlapping with the gap between the pixel electrode 10b and the pixel electrode 10d, and has a portion 114a that functions as an inter-pixel electrode. The "inter-pixel electrode" mentioned here refers to an electrode that has the same potential as the pixel electrode 10b and can apply a voltage to the liquid crystal layer 5, and essentially functions as an extended pixel portion (the same applies hereinafter).

[0057] The lower wiring 14b has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11d and the pixel electrode 10d. The lower wiring 14b is physically and electrically connected to the wiring 11d and the pixel electrode 10d through contact holes provided in the insulating layer 3. In addition, the lower wiring 14b of the present embodiment has a portion 114b that is arranged in a manner overlapping the gap between the pixel electrode 10d and the pixel electrode 10h and functions as an inter-pixel electrode.

[0058] The lower wiring 14c has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11f to the pixel electrode 10h. The lower wiring 14c is physically and electrically connected to the wiring 11f and the pixel electrode 10h via contact holes provided in the insulating layer 3. In addition, the lower wiring 14c of the present embodiment has a portion 114c that is arranged to overlap the gap between the pixel electrode 10h and the pixel electrodes 10f, 10i, and 10j and functions as an inter-pixel electrode.

[0059] The lower wiring 14d has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11g to the pixel electrode 10f. The lower wiring 14d is physically and electrically connected to the wiring 11g and the pixel electrode 10f through contact holes provided in the insulating layer 3. In addition, the lower wiring 14d of the present embodiment has a portion 114d that is arranged to overlap the gap between the pixel electrode 10f and the pixel electrode 10j and functions as an inter-pixel electrode.

[0060] The lower wiring 14e has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11h to the pixel electrode 10j. The lower wiring 14e is physically and electrically connected to the wiring 11h and the pixel electrode 10j respectively via contact holes provided in the insulating layer 3. In addition, the lower wiring 14e of the present embodiment has a portion 114e that is arranged in a manner overlapping the gap between the pixel electrode 10j and the pixel electrodes 10f and 10g and functions as an inter-pixel electrode.

[0061] The lower wiring 14f has a planar shape extending in the Y direction in the figure, and electrically connects the wiring 11j and the pixel electrode 10c. The lower wiring 14f is physically and electrically connected to the wiring 11j and the pixel electrode 10c through contact holes provided in the insulating layer 3, respectively.

[0062] The lower wiring 14g has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11k to the pixel electrode 10g. The lower wiring 14g is physically and electrically connected to the wiring 11k and the pixel electrode 10g respectively through contact holes provided in the insulating layer 3. In addition, the lower wiring 14g of the present embodiment has a portion 114g that is arranged so as to overlap the gap between the pixel electrode 10g and the pixel electrode 10c and functions as an inter-pixel electrode.

[0063] The lower wiring 14h has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11m to the pixel electrode 10i. The lower wiring 14g is physically and electrically connected to the wiring 11m and the pixel electrode 10i via contact holes provided in the insulating layer 3. In addition, the lower wiring 14h of the present embodiment has a portion 114h that is arranged in a manner overlapping the gap between the pixel electrode 10i and the pixel electrodes 10g and 10j and functions as an inter-pixel electrode.

[0064] The lower wiring 14i has a top view shape extending in the Y direction in the figure, and electrically connects the wiring 11p to the pixel electrode 10e. The lower wiring 14g is physically and electrically connected to the wiring 11p and the pixel electrode 10e respectively through contact holes provided in the insulating layer 3. In addition, the lower wiring 14i of this embodiment has a portion 114i that is arranged in a manner overlapping the gap between the pixel electrode 10c and the pixel electrode 10e and functions as an inter-pixel electrode.

[0065] The inter-pixel electrode 15a is physically and electrically connected to the pixel electrode 10e via the contact hole of the insulating layer 3, and is provided so as to overlap the gap between the pixel electrode 10e and the pixel electrodes 10g and 10i. The inter-pixel electrode 15a becomes the same potential as the pixel electrode 10e as a voltage is applied to the pixel electrode 10e, thereby substantially expanding the pixel portion (the same is true for other inter-pixel electrodes described below).

[0066] The inter-pixel electrode 15 b is physically and electrically connected to the pixel electrode 10 a via a contact hole of the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 a and the pixel electrode 10 c .

[0067] The inter-pixel electrode 15 c is physically and electrically connected to the pixel electrode 10 c via a contact hole in the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 c and the pixel electrodes 10 e and 10 g .

[0068] The inter-pixel electrode 15 d is physically and electrically connected to the pixel electrode 10 b via a contact hole in the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 b and the pixel electrodes 10 f and 10 j .

[0069] The inter-pixel electrode 15 e is physically and electrically connected to the pixel electrode 10 a via a contact hole in the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 a and the pixel electrodes 10 b and 10 c .

[0070] The inter-pixel electrode 15 f is physically and electrically connected to the pixel electrode 10 b via a contact hole in the insulating layer 3 , and is provided so as to overlap a gap between the pixel electrode 10 b and the pixel electrode 10 f .

[0071] The inter-pixel electrode 15 g is physically and electrically connected to the pixel electrode 10 a via a contact hole of the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 a and the pixel electrode 10 b .

[0072] The inter-pixel electrode 15 h is physically and electrically connected to the pixel electrode 10 a via a contact hole of the insulating layer 3 , and is provided so as to overlap with a gap between the pixel electrode 10 a and the pixel electrode 10 b .

[0073] The above-mentioned lower layer wirings 14f, 14g, and 14h are arranged between the inter-pixel electrodes 15b and 15c and the inter-pixel electrodes 15d and 15e. The above-mentioned lower layer wirings 14d and 14e are arranged between the inter-pixel electrodes 15d and 15e and the inter-pixel electrodes 15f and 15g. The above-mentioned lower layer wirings 14a, 14b, and 14c are arranged between the inter-pixel electrodes 15f and 15g and the inter-pixel electrode 15h.

[0074] In the liquid crystal element 100 of the first embodiment, a voltage (scanning signal) is applied to each thin film transistor 7 via each lower layer wiring 13a to 13c, and a voltage (data signal) is provided via each wiring 11a, 11e, 11i, 11n, thereby independently providing a driving voltage to each pixel electrode 10a, etc. Thus, the transmission state of light in the pixel portion defined corresponding to each pixel electrode 10a, etc. can be individually controlled to form an image based on the transmitted light.

[0075] In the liquid crystal element 100 of the first embodiment, by using the lower wiring 13a, etc., it is not necessary to set wiring between each pixel electrode 10a, etc., so the gap between each pixel electrode 10a when viewed from above can be made narrower. As a result, the light utilization efficiency is also improved, and the problem of dark grids between pixels can be suppressed. This is particularly useful in situations where strong light is incident on the liquid crystal element 100, such as when the liquid crystal element 100 is assembled into a vehicle lamp for use. In addition, by providing an inter-pixel electrode, the problem of the above-mentioned dark grid can be further suppressed, and the light utilization efficiency is also improved.

[0076] Figure 4 It is a top view for explaining the area where the liquid crystal element is irradiated with light and the position where the seal is set. When the liquid crystal element 100 of the first embodiment is assembled in the lighting device described later, the area (indicated by a single dotted line in the figure) including the pixel electrodes 10a to 10j and not including the thin film transistors 7 when viewed from above is set as the area irradiated with light, that is, the irradiated area 8. Therefore, the irradiated area 8 only includes transparent (light-transmitting) wirings, lower wirings and pixel electrodes. In addition, the irradiated area 8 corresponds to the "first area", and the area within the area surrounded by the seal 6 and outside the irradiated area 8 corresponds to the "second area".

[0077] In the conventional liquid crystal element, each thin film transistor is arranged one-to-one correspondingly adjacent to each pixel electrode. Therefore, a light shielding film for preventing light from entering each thin film transistor, a metal film for constituting the gate electrode of each thin film transistor, etc. are mostly required. In contrast, in the liquid crystal element 100 of the present embodiment, such a light shielding film, etc., does not need to be provided in the irradiated area 8. Therefore, even in a situation where strong light enters the liquid crystal element 100, such as when the liquid crystal element 100 is assembled in a vehicle lamp as a kind of lighting device, it is possible to prevent the liquid crystal layer 5 in the irradiated area 8 from becoming hot and causing malfunction due to exceeding the phase change temperature. This is because there is no part such as a light shielding film or a metal film in the irradiated area 8 that generates heat due to light irradiation. In addition, by arranging each thin film transistor 7 outside the irradiated area 8, it is possible to prevent the degradation of each thin film transistor 7 due to irradiation with strong light.

[0078] In the liquid crystal element 100 of the first embodiment, each lower wiring 13a and the like are arranged so as to overlap substantially all of each pixel electrode 10a at least in the illuminated region 8 in plan view. This can substantially prevent malfunction caused by voltage of each lower wiring 13a applied to the liquid crystal layer 5.

[0079] In addition, the seal 6 is provided in a manner that includes each pixel electrode 10a to 10j and each thin film transistor 7 when viewed from above. In other words, the seal 6 is provided in a manner that includes the irradiated area 8 (first area) and the area adjacent thereto (second area). As a result, each thin film transistor 7 is covered by the liquid crystal layer 5, so the liquid crystal layer 5 functions as a protective layer, thereby suppressing the degradation of each thin film transistor 7. In particular, when an organic semiconductor is used to form each semiconductor layer 12a, etc., degradation caused by contact between each semiconductor layer 12a, etc. and air occurs, but such degradation is suppressed by the protective effect of the liquid crystal layer 5. In addition, the thin film transistor 7 does not have to use an organic semiconductor. In this case, it is also possible to configure each thin film transistor 7 to be arranged on the outside of the seal 6 without being covered by the liquid crystal layer 7.

[0080] (Second Embodiment)

[0081] Figure 5 1 is a top view showing the structure of electrodes and wiring of the liquid crystal element of the second embodiment. In addition, the basic structure of the liquid crystal element 100a of the second embodiment is the same as that of the liquid crystal element 100 of the first embodiment, so the following mainly describes the different structures. In addition, the inter-pixel electrodes are omitted here, but the inter-pixel electrodes can also be provided in the liquid crystal element 100a of the second embodiment in the same manner as the liquid crystal element 100 of the first embodiment.

[0082] like Figure 5 As shown, the liquid crystal element 100a of the second embodiment has pixel electrodes 20a to 20j. The structure and function of these pixel electrodes 20a to 20j are the same as those of the pixel electrodes 10a to 10j in the liquid crystal element 100 of the first embodiment. Each pixel electrode 20a, 20c, 20e, and 20h corresponds to a thin film transistor 7a. As in the liquid crystal element 100 of the first embodiment, each thin film transistor 7a is electrically connected to each pixel electrode 20a, 20c, 20e, and 20h using wiring and lower layer wiring. Similarly, each pixel electrode 20b, 20d, 20f, 20g, 20i, and 20j corresponds to a thin film transistor 7b. As in the liquid crystal element 100 of the first embodiment, each thin film transistor 7b is electrically connected to each pixel electrode 20b, 20d, 20f, 20g, 20i, and 20j using wiring and lower layer wiring.

[0083] In the liquid crystal element 100a of the second embodiment, three cutouts are provided on the lower side of the pixel electrode 20a in the figure when viewed from above, and one or two thin film transistors 7a are arranged at each cutout. Moreover, the irradiated area 8 includes the pixel electrodes 20a to 20j and the thin film transistors 7a, and is set to a range that does not include the thin film transistors 7b. Therefore, as the thin film transistors 7a included in the irradiated area 8, thin film transistors using organic semiconductors that are not easily affected by light irradiation are used. On the other hand, as for the thin film transistors 7b not included in the irradiated area 8, since there is no influence of light irradiation, either organic semiconductors or inorganic semiconductors can be used.

[0084] Here, the irradiated area 8 includes a high illuminance area 8a irradiated with light of relatively high illuminance (light for image formation) and a low illuminance area 8b irradiated with light of relatively low illuminance. Figure 5 As shown, the high illumination area 8a in the liquid crystal element 100a of the second embodiment is an area including pixel electrodes 20b to 20i, and the low illumination area 8b is an area including the pixel electrode 20a. In addition, a thin film transistor 7a using an organic semiconductor is formed in the low illumination area 8b. The thin film transistor 7a connected to the pixel electrodes 20c, 20e, and 20h arranged in the high illumination area 8a is formed in the low illumination area 8b. For example, if the liquid crystal element 100a is assembled in a vehicle lamp as a kind of lighting device (refer to the fourth embodiment), the high illumination area 8a can be used to form a high beam that requires a relatively high illumination, and the low illumination area 8b can be used to form a low beam that only requires a relatively low illumination. In addition, the thin film transistor 7a included in the irradiated area 8 can also be a thin film transistor using an organic semiconductor, and the thin film transistor 7b arranged outside the irradiated area 8 can also be a transistor using an inorganic semiconductor.

[0085] In the liquid crystal element 100a of the second embodiment, the wiring 23d having a portion functioning as a gate electrode of each thin film transistor 7a is formed using a transparent conductive film such as ITO because it is included in the irradiated area 8. On the other hand, the wiring 23a that is not included in the irradiated area 8 and is connected to the wiring 23d, and the wirings 23b and 23c that are not included in the irradiated area 8 are formed using a metal film. Thus, for the wiring included in the irradiated area 8, heating of the wiring due to light irradiation can be prevented, and for the wiring not included in the irradiated area 8, low resistance can be achieved by using a metal film.

[0086] Furthermore, in the liquid crystal element 100a of the second embodiment, with respect to each wiring 21a, 21e, 21i, 21n having a portion functioning as a source / drain electrode of each thin film transistor 7a, 7b, lower layer wirings 24a to 24j made of a metal film are provided on the lower layer side of each wiring 21a, etc. via the insulating film 3. These lower layer wirings 24a, etc. can be formed simultaneously when the wirings 23a to 23c are formed.

[0087] The lower wiring 24a is provided between the wiring 23d and the wiring 23b and at a position overlapping with the wiring 21a when viewed from above, and is physically and electrically connected to the wiring 21a via two contact holes provided in the insulating film 3. Similarly, the lower wiring 24b is provided between the wiring 23b and the wiring 23c and at a position overlapping with the wiring 21a when viewed from above, and is physically and electrically connected to the wiring 21a via two contact holes provided in the insulating film 3. Similarly, the lower wiring 24c is provided at a position lower than the wiring 23c in the figure and overlapping with the wiring 21a when viewed from above, and is physically and electrically connected to the wiring 21a via one contact hole provided in the insulating film 3. Through these lower wirings 24a to 24c, the resistance of the wiring 21a is reduced.

[0088] Lower layer wirings 24d, 24e, and 24f are respectively arranged on the lower layer side of wiring 21e. Lower layer wirings 24g, 24h, and 24i are respectively arranged on the lower layer side of wiring 21i. Lower layer wiring 24j is arranged on the lower layer side of wiring 21n. The specific arrangement method of these lower layer wirings 24d and the like is the same as that of the lower layer sides 24a to 24c, so the description is omitted.

[0089] Although not shown in the figure, the seal 6 may be provided over the entire range including the pixel electrodes 20 a and the thin film transistors 7 a and 7 b. In addition, when the thin film transistors 7 b are formed using inorganic semiconductors, they may be arranged outside the seal 6 .

[0090] Figure 6 (A)~ Figure 6 (F) is a diagram for explaining a manufacturing method for mixing a thin film transistor using an inorganic semiconductor and a thin film transistor using an organic semiconductor. Here, as an example, a method for forming an anti-coplanar thin film transistor as a thin film transistor 7b using an inorganic semiconductor and forming an anti-staggered thin film transistor as a thin film transistor 7a using an organic semiconductor is explained.

[0091] On one side of the substrate 200, wiring ( Figure 6(A)). Specifically, for example, a metal film such as Ta, Mo, Cr, Al, Cu, or a conductive film such as ITO is formed and patterned. As a film forming method, a known sputtering method, a plasma CVD method, etc. can be used. For patterning, for example, a known dry etching method or a wet etching method can be used.

[0092] Next, an insulating film 202 ( 202b ) is formed on one side of the substrate 200 so as to cover the wiring having a portion functioning as the gate electrodes 201a and 201b. Figure 6 (B)). For example, an inorganic insulating film such as a SiOx film or a SiNx film is formed by a sputtering method or a plasma CVD method.

[0093] Next, a semiconductor layer 203 and a carrier injection layer 204 are formed on the upper surface of the insulating film 202 ( Figure 6 (C)). For example, an amorphous Si film is formed as the semiconductor layer 203. As shown in the figure, the semiconductor layer 203 and the carrier injection layer 204 are formed at a position overlapping with the gate electrode 201b in a plan view.

[0094] Next, wiring ( Figure 6 (D)). The source / drain electrode 205b is formed in such a way that the carrier injection layer 204 is partially removed and the semiconductor layer 203 is exposed. Specifically, for example, a metal film of Cu, Al, Mo, etc. or a conductive film of ITO, etc. is formed and patterned. As a film forming method, a known sputtering method, a plasma CVD method, etc. can be used. For patterning, for example, a known dry etching method or a wet etching method can be used.

[0095] Next, a wiring ( Figure 6 Here, a wiring having a source / drain electrode 205a is formed using a transparent conductive film such as ITO. The film forming method and the patterning method can use the above-mentioned known methods. In addition, the source / drain electrode 205b can also be formed using ITO. In this case, the source / drain electrode 205a and the source / drain electrode 205b can be formed simultaneously in this process.

[0096] Next, a passivation film 206 is formed so as to cover the semiconductor layer 203 and the source / drain electrodes 205b. Figure 6 (E)). For example, an inorganic insulating film such as a SiOx film or a SiNx film is formed as the passivation film 206 by a known method such as a mask sputtering method. Furthermore, a light shielding film 207 composed of a Cr film or carbon black or the like may be provided on the upper side of the passivation film 206 and at a position overlapping with the semiconductor layer 203 when viewed from above.

[0097] Next, an organic semiconductor layer 208 ( Figure 6 (E)). For example, a material to be the semiconductor layer 208 is applied using a droplet discharge method such as an inkjet method. In addition, an alignment film may be pattern-formed on one surface of the substrate 200 before this step.

[0098] Through the above steps, the thin film transistor 7 a using an organic semiconductor and the thin film transistor 7 b using an inorganic semiconductor can be formed on one substrate 200 .

[0099] (Third Embodiment)

[0100] Figure 7 It is a plan view showing the structure of electrodes and wirings of a liquid crystal element according to the third embodiment. Figure 8 (A)~ Figure 8 (B) is a partial cross-sectional view showing the structure of the first substrate of the liquid crystal element of the third embodiment. Figure 8 (A) corresponds to Figure 7 The dd line cross section shown, Figure 8 (B) corresponds to Figure 7 The basic structure of the liquid crystal element 100b of the third embodiment is the same as that of the liquid crystal element 100 of the first embodiment and the liquid crystal element 100a of the second embodiment, and the main difference is that Figure 8 As shown in (A) and the like, each pixel electrode 30a and the like are provided on the upper layer side of the wiring and the lower wiring via the insulating layer 9. Hereinafter, detailed description of the common components is omitted. In addition, the layer provided with each pixel electrode 30a and the like corresponds to the "third layer".

[0101] like Figure 7 As shown, the liquid crystal element 100b of the third embodiment has pixel electrodes 30a to 30j. The structure and function of these pixel electrodes 30a to 30j are the same as those of the pixel electrodes 10a to 10j in the liquid crystal element 100 of the first embodiment. In addition, similarly to the second embodiment, in the illuminated area 8 of the liquid crystal element 100b of the third embodiment, an illumination area 8a is set in the area including the pixel electrodes 30b to 30i, and a low illumination area 8b is set in the area including the pixel electrode 30a.

[0102] Each pixel electrode 30a, 30c, 30e, and 30h corresponds to a thin film transistor 7a. As in the liquid crystal element 100 of the first embodiment, each thin film transistor 7a is electrically connected to each pixel electrode 30a, 30c, 30e, and 30h using wiring and lower wiring. Similarly, each pixel electrode 30b, 30d, 30f, 30g, 30i, and 30j corresponds to a thin film transistor 7b. As in the liquid crystal element 100 of the first embodiment, each thin film transistor 7b is electrically connected to each pixel electrode 30b, 30d, 30f, 30g, 30i, and 30j using wiring and lower wiring. In addition, in the present embodiment, each thin film transistor 7a is arranged at a position overlapping with the pixel electrode 30a. Therefore, each thin film transistor 7a is composed of an organic semiconductor. On the other hand, each thin film transistor 7b located at a position not overlapping with the pixel electrode can be composed of an organic semiconductor or an inorganic semiconductor.

[0103] like Figure 8 As shown in (A), each pixel electrode 30a, 30c, and 30e is provided on the upper side of the insulating layer 9 provided to cover the insulating layer 3. The same is true for other pixel electrodes 30b, etc., not shown in the figure. The semiconductor layer 12p is provided at a portion where a portion of the pixel electrode 30a is opened. A thin film transistor 7a is formed by including the semiconductor layer 12p, a portion that functions as a gate electrode of the wiring 23d provided on one side of the first substrate 1, and the wirings 21j and 21k on the upper layer of the insulating layer 3. The thin film transistor 7a is connected to the pixel electrode 30e via the lower wiring 24m on one side of the first substrate 1 and the wiring 21m on one side of the insulating layer 3. The lower wiring 24m and the wiring 21m are connected via a contact hole provided in the insulating layer 3. The pixel electrode 30e and the wiring 21m are connected via a contact hole provided in the insulating layer 9. In addition, a portion of the wiring 21m is arranged in a manner overlapping the gap between the pixel electrode 30c and the pixel electrode 30e, and functions as an inter-pixel electrode.

[0104] In addition, the pixel electrode 30d is also connected to the thin film transistor 7b through the wirings 21d and 21n and the lower layer wiring 24n by the same structure (see Figure 8 (B)). A portion of the wiring 21n is arranged to overlap the gap between the pixel electrodes 30d and 30f, and functions as an inter-pixel electrode. In addition, although detailed description is omitted, the pixel electrodes 30f, 30g, 30h, 30i, and 30j are also connected to any thin film transistor 7a or 7b through the same structure. On the other hand, the pixel electrodes 30a, 30b, and 30c are connected to any thin film transistor 7a or 7b through each wiring provided on the upper layer of the insulating layer 3, not through the lower layer wiring.

[0105] like Figure 8 As shown in (B), each pixel electrode 30a, 30b, 30d, and 30f is arranged on the upper side of the insulating layer 9 provided to cover the insulating layer 3. The same applies to other pixel electrodes not shown. The semiconductor layer 12q is arranged in a manner connected to the wiring 21a and the wiring 21d. A thin film transistor 7b is formed by including the semiconductor layer 12q, a portion that functions as a gate electrode of the lower wiring 23c provided on one side of the first substrate 1, and the wirings 21a and 21d on the upper layer of the insulating layer 3. The lower wirings 23a and 23b are arranged to cross the wiring 21d in a manner that they partially overlap with the wiring 21d when viewed from above. In addition, the configuration relationship between these lower wirings 23a and 23b and the wirings 21h and 21i is also the same. In addition, the insulating layer 9 is not provided in the portion that constitutes the thin film transistor 7b.

[0106] In this way, by arranging a part of the pixel electrode and the thin film transistor in a manner overlapping when viewed from above, the size of the entire liquid crystal element 100b can be made more compact while ensuring the area of ​​the pixel electrode. Furthermore, for example, an auxiliary electrode electrically connected to either the pixel electrode 30a or 30c may be formed on the insulating film 3 on the lower wiring 24m as the routing line of the gate electrode in a manner overlapping the gap between the pixel electrodes 30a and 30c arranged between the pixel electrode 30e and the connected thin film transistor 7a. In addition, for example, an auxiliary electrode electrically connected to either the pixel electrode 30a or 30b may be formed on the insulating film 3 on the lower wiring 24n as the routing line of the drain electrode in a manner overlapping the gap between the pixel electrodes 30a and 30b arranged between the pixel electrode 30d and the connected thin film transistor 7b, and the gap between the pixel electrodes 30b and 30f. The lower wiring 24m is a drain electrode connected to the pixel electrode 30e. In the gap between the pixel electrodes 30a and 30c, the voltage applied to the lower wiring 24m is applied to the liquid crystal layer via the insulating film 3 and the insulating film 9, so it can be observed as a malfunction between the electrodes. Similarly, the lower wiring 24n is a drain electrode connected to the pixel electrode 30d. In the gap between the pixel electrodes 30a and 30c, the voltage applied to the lower wiring 24n is applied to the liquid crystal layer via the insulating film 3 and the insulating film 9, so it can be observed as a malfunction between the electrodes. In order to prevent this malfunction, it is preferred to form the above-mentioned auxiliary electrode in the gap between the pixel electrodes. Here, as the lower wiring that is routed in the gap between the pixel electrodes, the case of the drain electrode is described, but in the present invention, as the lower wiring that is routed in the gap between the pixel electrodes, the case of the gate electrode or the source electrode can also be adopted. In this case, it is also possible to prevent malfunction by forming an auxiliary electrode in the gap between the pixel electrodes.

[0107] (Fourth Embodiment)

[0108] Fig. 9(A) is a diagram showing a configuration of a vehicle lighting system according to an embodiment that uses the liquid crystal element of the above-described embodiment. Fig. 9 The vehicle lamp system shown in (A) is configured to include a vehicle lamp (lighting device) 301, a controller 302, and a camera 303. The vehicle headlamp system detects the positions of the front vehicle, the faces of pedestrians, etc., which exist around the vehicle based on the image of the vehicle surroundings captured by the camera 303, sets a certain range including the position of the front vehicle, etc. as a dimming range (or non-irradiation range), sets the range other than this as a light irradiation range to perform selective light irradiation, and irradiates light in various shapes onto the road surface.

[0109] The vehicle lamp 301 is disposed, for example, at a predetermined position in front of the vehicle to form irradiation light for illuminating the front of the vehicle. In addition, the vehicle lamp 301 is provided one on each side of the vehicle, but only one is shown here.

[0110] The controller 302 controls the operation of the light source 310 and the liquid crystal element 315 of the vehicle lamp 301. The controller 302 is implemented by executing a predetermined operation program in a computer system having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), etc., for example. The controller 302 of this embodiment turns on the light source 310 according to the operation state of a light switch (not shown) provided at the driver's seat, and sets a light distribution pattern corresponding to an object such as a front vehicle (oncoming vehicle, preceding vehicle), a pedestrian, a road sign, a white line on the road, etc. detected by the camera 303, and supplies a control signal for forming an image corresponding to the light distribution pattern to the liquid crystal element 315.

[0111] The camera 303 captures the space in front of the vehicle to generate an image, and performs a predetermined image recognition process on the image to detect the position, range, size, category, etc. of the object such as the vehicle in front. The detection result of the image recognition process is provided to the controller 302 connected to the camera 303. The camera 303 is set at a predetermined position in the vehicle compartment (for example, the upper part of the front windshield), or at a predetermined position outside the vehicle compartment (for example, inside the front bumper). In the case where the vehicle is equipped with a camera for other purposes (for example, an automatic braking system, etc.), the camera can also be shared.

[0112] In addition, the image recognition processing function in the camera 303 may be replaced by the controller 302. In this case, the camera 303 outputs the generated image to the controller 302, and the controller 302 performs image recognition processing based on the image. Alternatively, both the image and the result of the image recognition processing based on the image may be supplied from the camera 303 to the controller 302. In this case, the controller 302 may further perform its own image recognition processing using the image obtained from the camera 303.

[0113] Fig. 9 The vehicle lamp 301 shown in (A) is composed of a light source 310, a reflector (reflection component) 311, 313, a polarization beam splitter (first polarization element) 312, a 1 / 4 wavelength plate 314, a liquid crystal element 315, an optical compensation plate 316, a polarization plate (second polarization element) 317, and a projection lens 318. These elements are integrated into a housing (frame), for example. In addition, the light source 310 and the liquid crystal element 315 are connected to the controller 302 respectively.

[0114] The light source 310 includes a driving circuit and emits light under the control of the controller 302. The light source 310 is the same as the above-mentioned verification light source, and is a white LED having a blue LED and a yellow phosphor arranged at a position where the light emitted by the blue LED is incident. The yellow phosphor is excited by the blue LED, and white is obtained by mixing blue and yellow.

[0115] The reflector 311 is arranged corresponding to the light source 310, and the light emitted from the light source 310 is reflected and condensed in a manner focused at the position of the liquid crystal element 315 (as an example, the approximate center of the thickness direction of the liquid crystal element 315) and guided in the direction of the polarization beam splitter 12, and is incident on the liquid crystal element 315. The reflector 311 is, for example, a reflector having an elliptical reflecting surface. In this case, the light source 310 can be arranged near the focus of the reflecting surface of the reflector 311. In addition, a lens can be used as a focusing unit instead of the reflector 311.

[0116] The polarization beam splitter 12 is a transflective polarization element that transmits polarized light in a specific direction of incident light and reflects polarized light in an orthogonal direction to the incident light, and is arranged obliquely with respect to the light incident surface on the light incident surface side of the liquid crystal element 315. As such a polarization beam splitter 12, for example, a wire grid polarization element, a multilayer film polarization element, or the like can be used.

[0117] The reflector 313 is provided at a position where the light reflected by the polarization beam splitter 12 can be incident, and the incident light is reflected and condensed so as to be focused at the position of the liquid crystal element 315 and then enters the polarization beam splitter 12 .

[0118] The quarter wavelength plate 314 is disposed on the optical path between the polarization beam splitter 12 and the reflector 313, and provides a phase difference to the incident light. In the present embodiment, the light reflected by the polarization beam splitter 12 passes through the quarter wavelength plate 314, is reflected by the reflector 313, and passes through the quarter wavelength plate 314 again, whereby the polarization direction is rotated by 90° and is incident again on the polarization beam splitter 312. As a result, the re-incident light becomes more easily transmitted through the polarization beam splitter 312, and thus the light utilization efficiency is improved.

[0119] In addition, if Fig. 9 As in the vehicle lamp 301a of the modified embodiment shown in (B), a 1 / 2 wavelength plate 314a may be used instead of the 1 / 4 wavelength plate 314. In this case, the 1 / 2 wavelength plate 314a is arranged at a position where the light reflected by the polarization beam splitter 12 does not enter and the light reflected by the reflector 313 enters.

[0120] The liquid crystal element 315 is arranged at a position including the focal point of the light reflected and focused by the reflectors 311 and 313, respectively, and is arranged in a manner such that the light is incident. The liquid crystal element 315 has a plurality of pixel units (light modulation units) that can be controlled independently of each other. In the present embodiment, the liquid crystal element 315 has a driver (not shown) for providing a driving voltage to each pixel unit. The driver provides the liquid crystal element 315 with a driving voltage for driving each pixel unit individually based on a control signal supplied from the controller 302. As shown in the figure, the light incident on the liquid crystal element 315 is incident at a wide angle relative to the light incident surface of the liquid crystal element 315. Specifically, the light is incident at a wide angle of about 40° to 60° relative to the normal direction of the light incident surface.

[0121] The optical compensation plate 316 is used to compensate for the phase difference of light passing through the liquid crystal element 315 and improve the polarization degree, and is arranged on the light emitting surface side of the liquid crystal element 315. Specifically, the phase difference of the optical compensation plate 316 is set in such a way that the phase difference added to the phase difference of the liquid crystal layer 315 becomes 0 or a value close to 0. In addition, the optical compensation plate 316 can also be omitted.

[0122] The polarizing plate 317 is arranged on the light emitting surface side of the liquid crystal element 315. An image corresponding to the light distribution pattern of the light irradiated to the front of the vehicle is formed by the polarizing beam splitter 12, the polarizing plate 317 and the liquid crystal element 315 arranged therebetween. The transmission axis of the polarizing plate 317 is arranged in a direction substantially orthogonal to the transmission axis of the polarizing beam splitter 312. In addition, each transmission axis of the polarizing plate 317 and the polarizing beam splitter 312 is arranged to form an angle of approximately 45° with respect to the orientation direction of the liquid crystal layer of the liquid crystal element 315 when no voltage is applied at the approximate center of the layer thickness direction when viewed from above.

[0123] The projection lens 318 is arranged at a position where light reflected and focused by the reflectors 311 and 313 and transmitted through the liquid crystal element 315 can be incident, and projects the incident light to the front of the vehicle. The projection lens 318 is arranged so that its focus is focused on the liquid crystal layer of the liquid crystal element 315. The optical axis of the projection lens 318 is shown by the single-dot chain line in the figure and is along the left-right direction in the figure.

[0124] (Variation Example)

[0125] In addition, the present disclosure is not limited to the contents of the above-mentioned embodiments, and can be implemented in various ways within the scope of the main purpose of the present disclosure. For example, in the above-mentioned embodiment, a vehicle lamp is illustrated as an example of a lighting device composed of a liquid crystal element, but the lighting device is not limited to this. In addition, in the above-mentioned embodiment, a thin film transistor is described as an example of a thin film switch element, but a thin film switch element such as an MIM (Metal Insulator Metal; metal-insulating layer-metal) element can also be used instead of a thin film transistor. In addition, the operation mode (orientation mode) of the liquid crystal layer is not limited to the above-mentioned vertical orientation mode.

[0126] The present disclosure has the following additional features.

[0127] (Note 1)

[0128] A liquid crystal element, comprising:

[0129] A first substrate and a second substrate, which are arranged to face each other;

[0130] a liquid crystal layer disposed between the first substrate and the second substrate;

[0131] A plurality of pixel electrodes, which are provided on the first substrate side using a transparent conductive film and include pixel electrodes having different shapes in a plan view;

[0132] A plurality of thin film switch elements, which are arranged on the first substrate side and correspond one to one to each of the pixel electrodes;

[0133] a plurality of first wirings which are provided on the first substrate side using a transparent conductive film and connect each of the pixel electrodes to each of the thin film switch elements; and

[0134] a counter electrode provided on the second substrate side and configured to overlap with each of the pixel electrodes in a plan view,

[0135] All of the pixel electrodes are arranged in a first region irradiated with image forming light,

[0136] Each of the membrane switch elements is disposed in a second region that is adjacent to the first region in a plan view and is not irradiated with the image forming light.

[0137] (Note 2)

[0138] A liquid crystal element, comprising:

[0139] A first substrate and a second substrate, which are arranged to face each other;

[0140] a liquid crystal layer disposed between the first substrate and the second substrate;

[0141] A plurality of pixel electrodes, which are provided on the first substrate side using a transparent conductive film and include pixel electrodes having different shapes in a plan view;

[0142] A plurality of thin film switch elements, which are arranged on the first substrate side and correspond one to one to each of the pixel electrodes;

[0143] a plurality of first wirings which are provided on the first substrate side using a transparent conductive film and connect each of the pixel electrodes to each of the thin film switch elements; and

[0144] a counter electrode provided on the second substrate side and configured to overlap with each of the pixel electrodes in a plan view,

[0145] Each of the thin film switch elements comprises a plurality of first thin film switch elements and a plurality of second thin film switch elements, at least each of the first thin film switch elements is formed using an organic semiconductor,

[0146] All of the pixel electrodes and the first switching elements are arranged in a first region, and the first region is irradiated with image forming light.

[0147] Each of the second membrane switch elements is disposed in a second region that is adjacent to the first region in a plan view and is not irradiated with the image forming light.

[0148] (Note 3)

[0149] The liquid crystal element according to Supplementary Note 2, wherein

[0150] Each of the first thin film switching elements is disposed in a cutout portion provided in at least one of the pixel electrodes, and is disposed so as not to overlap with any of the pixel electrodes in a plan view.

[0151] (Note 4)

[0152] The liquid crystal element according to Supplementary Note 2, wherein

[0153] Each of the first thin film switching elements is provided at a position overlapping with at least one of the pixel electrodes in a plan view.

[0154] (Note 5)

[0155] The liquid crystal element according to any one of Supplementary Notes 1 to 3, further comprising:

[0156] a plurality of second wirings including portions functioning as control electrodes of the respective thin film switch elements; and

[0157] a plurality of third wirings including portions functioning as input and output electrodes of each of the thin film switch elements,

[0158] Each of the first wirings and each of the second wirings are arranged on a first layer relatively close to one surface of the first substrate on the first substrate side,

[0159] Each of the third wirings and each of the pixel electrodes is arranged on the second layer on a surface relatively far from the first substrate on the first substrate side.

[0160] An insulating layer is disposed between the first layer and the second layer.

[0161] (Note 6)

[0162] The liquid crystal element according to Supplement 2 or Supplement 4, wherein:

[0163] The liquid crystal element further comprises:

[0164] a plurality of second wirings including portions functioning as control electrodes of the respective thin film switch elements; and

[0165] a plurality of third wirings including portions functioning as input and output terminal electrodes of each of the thin film switch elements;

[0166] Each of the first wirings and each of the second wirings are arranged on a first layer relatively close to one surface of the first substrate on the first substrate side,

[0167] Each of the third wirings is arranged on the first substrate side in a second layer which is relatively farther from a surface of the first substrate than the first layer.

[0168] Each of the pixel electrodes is arranged on a third layer on the first substrate side which is relatively farther from the first substrate than the second layer.

[0169] An insulating layer is disposed between the first layer and the second layer and between the first layer and the second layer, respectively.

[0170] (Note 7)

[0171] The liquid crystal element according to any one of Supplementary Notes 1 to 6, wherein

[0172] The liquid crystal element further includes a sealant, which is disposed between the first substrate and the second substrate so as to surround the liquid crystal layer.

[0173] The seal is configured to include the first region and the second region.

[0174] (Note 8)

[0175] The liquid crystal element according to Supplementary Note 2 to Supplementary Note 4 or Supplementary Note 6, wherein

[0176] The first region includes: a high illumination region irradiated with the image forming light of relatively high illumination; and a low illumination region irradiated with the image forming light of relatively low intensity,

[0177] All of the first switch elements are arranged in the low illumination area.

[0178] (Note 9)

[0179] A lighting device, comprising:

[0180] The liquid crystal element according to any one of Supplementary Notes 1 to 8;

[0181] light source;

[0182] a light-collecting section that collects the light emitted from the light source as the image-forming light and causes the image-forming light to enter the liquid crystal element;

[0183] a pair of polarizing elements disposed opposite to each other with the liquid crystal element interposed therebetween; and

[0184] A lens projects light transmitted through the liquid crystal element.

[0185] (Note 10)

[0186] A vehicle lighting system, comprising:

[0187] A vehicle lamp, which is formed by using the lighting device described in Supplementary Note 9;

[0188] a sensor that detects an object present around the vehicle; and

[0189] A controller controls the operation of the liquid crystal element according to the state of the object detected by the sensor.

[0190] [Explanation of Reference Numerals]

[0191] 1: first substrate, 2: second substrate, 3: insulating layer, 4: counter electrode, 5: liquid crystal layer, 6: sealing member, 7: thin film transistor, 8: irradiated area, 10a to 10j: pixel electrodes, 11a to 11p: wiring, 12a to 12j: semiconductor layer, 13a to 13c: lower wiring, 14a to 14i: lower wiring, 15a to 15h: inter-pixel electrodes, 100: liquid crystal element

Claims

1. A liquid crystal element, comprising: A first substrate and a second substrate, which are arranged to face each other; a liquid crystal layer disposed between the first substrate and the second substrate; A plurality of pixel electrodes, which are provided on the first substrate side using a transparent conductive film and include pixel electrodes having different shapes in a plan view; A plurality of thin film switch elements, which are arranged on the first substrate side and correspond one to one to each of the pixel electrodes; a plurality of first wirings, which are provided on the first substrate side using a transparent conductive film and connect each of the pixel electrodes with each of the thin film switch elements; as well as a counter electrode provided on the second substrate side and configured to overlap with each of the pixel electrodes in a plan view, All of the pixel electrodes are arranged in a first region irradiated with image forming light, Each of the membrane switch elements is disposed in a second region that is adjacent to the first region in a plan view and is not irradiated with the image forming light.

2. A liquid crystal element, comprising: A first substrate and a second substrate, which are arranged to face each other; a liquid crystal layer disposed between the first substrate and the second substrate; A plurality of pixel electrodes, which are provided on the first substrate side using a transparent conductive film and include pixel electrodes having different shapes in a plan view; A plurality of thin film switch elements, which are arranged on the first substrate side and correspond one to one to each of the pixel electrodes; a plurality of first wirings, which are provided on the first substrate side using a transparent conductive film and connect each of the pixel electrodes with each of the thin film switch elements; as well as a counter electrode provided on the second substrate side and configured to overlap with each of the pixel electrodes in a plan view, Each of the thin film switch elements comprises a plurality of first thin film switch elements and a plurality of second thin film switch elements, at least each of the first thin film switch elements is formed using an organic semiconductor, Each of the pixel electrodes and each of the first switching elements are all arranged in a first region irradiated with image forming light, Each of the second membrane switch elements is disposed in a second region that is adjacent to the first region in a plan view and is not irradiated with the image forming light.

3. The liquid crystal element according to claim 2, wherein Each of the first thin film switching elements is disposed in a cutout portion provided in at least one of the pixel electrodes, and is disposed so as not to overlap with any of the pixel electrodes in a plan view.

4. The liquid crystal element according to claim 2, wherein Each of the first thin film switching elements is provided at a position overlapping with at least one of the pixel electrodes in a plan view.

5. The liquid crystal element according to claim 1 or 2, wherein The liquid crystal element also comprises: a plurality of second wirings including portions functioning as control electrodes of the respective thin film switch elements; and a plurality of third wirings including portions functioning as input and output electrodes of each of the thin film switch elements, Each of the first wirings and each of the second wirings are arranged on a first layer relatively close to one surface of the first substrate on the first substrate side, Each of the third wirings and each of the pixel electrodes is arranged on the second layer on a surface relatively far from the first substrate on the first substrate side. An insulating layer is disposed between the first layer and the second layer.

6. The liquid crystal element according to claim 2, wherein The liquid crystal element further comprises: a plurality of second wirings including portions functioning as control electrodes of the respective thin film switch elements; and a plurality of third wirings including portions functioning as input and output terminal electrodes of each of the thin film switch elements; Each of the first wirings and each of the second wirings are arranged on a first layer relatively close to one surface of the first substrate on the first substrate side, Each of the third wirings is arranged on the first substrate side in a second layer which is relatively farther from a surface of the first substrate than the first layer. Each of the pixel electrodes is arranged on a third layer on the first substrate side which is relatively farther from the first substrate than the second layer. An insulating layer is disposed between the first layer and the second layer and between the first layer and the second layer, respectively.

7. The liquid crystal element according to claim 1 or 2, wherein The liquid crystal element further includes a sealant, which is disposed between the first substrate and the second substrate so as to surround the liquid crystal layer. The seal is configured to include the first region and the second region.

8. The liquid crystal element according to claim 2, wherein The first region includes: a high illumination region irradiated with the image forming light of relatively high illumination; and a low illumination region irradiated with the image forming light of relatively low intensity, All of the first switch elements are arranged in the low illumination area.

9. A lighting device, comprising: The liquid crystal element according to claim 1 or 2; light source; a light-collecting section that collects the light emitted from the light source as the image-forming light and causes the image-forming light to enter the liquid crystal element; a pair of polarizing elements disposed opposite to each other with the liquid crystal element interposed therebetween; and A lens projects light transmitted through the liquid crystal element.

10. A vehicle lighting system, comprising: A vehicle lamp, which is constructed using the lighting device according to claim 9; a sensor that detects an object present around the vehicle; and A controller controls the operation of the liquid crystal element according to the state of the object detected by the sensor.

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