Battery device sampling temperature processing method, device, electronic device and storage medium

Abstract

The present application provides a sampling temperature processing method, device, electronic device and storage medium for a battery device, and relates to the technical field of data processing of battery devices. The method includes: in response to virtual module configuration information, grouping the temperature sampling points corresponding to the target sampling chip to obtain at least one virtual module; verifying the target sampling chip according to the first state information to obtain the second state information, and the second state information is used to calculate the temperature value of the virtual module; wherein the first state information represents whether each temperature sampling point in at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip, and the fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip. The present application can improve the applicable scenarios of temperature sampling and the calculation accuracy of the temperature sampling value.

Description

Technical Field

[0001] The present application relates to the technical field of data processing of battery devices, and in particular to a method, device, electronic device and storage medium for processing sampled temperature of a battery device. Background Art

[0002] The temperature detection of battery devices usually relies on temperature sensors installed inside the battery devices, such as NTC (negative temperature coefficient) thermistors. These sensors can provide real-time data on battery temperature and provide decision support for the battery management system. Due to the uneven temperature distribution inside the battery device, as well as the error and aging of the temperature sensor itself, the accuracy of battery temperature monitoring data is crucial to the performance of the battery management system.

[0003] However, in the related art, when there is no sampling temperature failure, an outlier detection algorithm is used to identify and eliminate outliers to improve the accuracy of temperature sampling. However, the outlier detection algorithm has restrictions on the number of temperature sensors, and the types of sampling chips that can be applied are limited. It is also not suitable for scenarios where there is a sampling temperature failure. These problems lead to limitations in the applicable scenarios of the temperature sampling method of the battery device.

[0004] It should be noted that the above statements are only used to provide background technical information related to the present application and do not necessarily constitute prior art. Summary of the invention

[0005] In view of this, the purpose of the present application is to propose a sampling temperature processing method, device, electronic device and storage medium for a battery device. The present application can specifically solve the problem that the applicable scenarios of the existing temperature sampling method for battery devices are limited.

[0006] Based on the above purpose, in a first aspect, the present application proposes a sampling temperature processing method for a battery device, the method comprising: in response to virtual module configuration information, grouping temperature sampling points corresponding to a target sampling chip to obtain at least one virtual module; verifying the target sampling chip according to first state information to obtain second state information, the second state information being used to calculate the temperature value of the virtual module; wherein the first state information represents whether each temperature sampling point in the at least one virtual module satisfies a valid condition, the second state information represents a fault level of the target sampling chip, the fault level being obtained according to distribution information of the temperature sampling points that do not meet the valid condition in the temperature sampling points corresponding to the target sampling chip; the valid condition comprises that the deviation between the temperature value collected at the temperature sampling point and the preset temperature value is within a preset temperature difference range.

[0007] This embodiment divides the temperature sampling points corresponding to the target sampling chip into multiple groups according to the virtual module configuration information to obtain at least one virtual module. It is not limited by the number of temperature sampling points and can be adapted to any type of sampling chip, thereby improving the applicable scope of temperature sampling. It can also process each temperature sampling point and reasonably utilize the temperature sampling points in each sampling chip to determine the fault level of the target sampling chip. The second state information representing the fault level of the target sampling chip is used to calculate the temperature value of the virtual module, so that temperature collection can be performed regardless of whether the sampled temperature is faulty or not. This not only improves the applicable scenarios of temperature sampling, but also improves the calculation accuracy of the temperature sampling value.

[0008] In some embodiments, the virtual module configuration information includes the number of virtual modules and the number of temperature sampling points in each virtual module, wherein the number of temperature sampling points in each virtual module and the proportion of all temperature sampling points corresponding to the target sampling chip are within a preset range.

[0009] This embodiment can achieve uniform distribution of temperature sampling points within the virtual module, improve the calculation accuracy of the target sampling chip fault level, make the temperature data of the virtual module both representative and able to cover the overall temperature change of the sampling data, thereby improving the accuracy and reliability of temperature monitoring.

[0010] In some embodiments, the target sampling chip is verified according to the first state information to obtain the second state information, including: when all temperature sampling points corresponding to the target sampling chip meet the validity conditions, determining that the second state information is fault-free; when the target sampling chip has temperature sampling points that do not meet the validity conditions, the second state information is obtained according to the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and at least one of the first state information of the temperature sampling points.

[0011] In this embodiment, the temperature value collected at each temperature sampling point will be checked to see if it meets the valid conditions. By verifying the data of each sampling point, the collected temperature data can be reliable and accurate. When there are temperature sampling points that do not meet the valid conditions, the fault level of the target sampling chip is determined by multiple fault level evaluation factors, which can improve the accuracy of fault detection and provide real and reliable data support for the next step of determining the temperature value.

[0012] In some embodiments, the second state information is obtained based on at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points, including: obtaining a target proportion based on the ratio of the number of temperature sampling points that do not meet the validity condition in each virtual module to the total number of temperature sampling points in each virtual module, the distribution information including the target proportion; and obtaining the second state information based on a preset matching relationship between the target proportion and the fault level.

[0013] The method based on the preset matching relationship between the target proportion and the fault level in the above embodiment can effectively convert the invalid situation of the temperature sampling point into a specific fault level, providing strong support for the fault level classification of the chip.

[0014] In some embodiments, the number of virtual modules is greater than 1, and the second state information is obtained according to the preset matching relationship between the target proportion and the fault level, including: according to the target proportions of all virtual modules are not equal to 1, determining that the second state information is the first fault level; according to the number of virtual modules whose target proportions are equal to 1 is equal to 1, determining that the second state information is the second fault level; according to the number of virtual modules whose target proportions are equal to 1 is greater than 1, determining that the second state information is the third fault level, wherein the fault degrees of the first fault level, the second fault level, and the third fault level increase in sequence.

[0015] In the case of multiple virtual modules, this embodiment combines multiple factors such as the target proportion in each virtual module, the size of the target proportion, the number of virtual modules, and the distribution of the target proportions in different virtual modules to determine the fault level of the target sampling chip, thereby greatly improving the calculation accuracy of the fault level of the target sampling chip.

[0016] In some embodiments, the number of virtual modules is equal to 1, and the second state information is obtained according to the preset matching relationship between the target proportion and the fault level, including: according to the target proportion of the virtual modules being less than or equal to the first proportion, determining that the second state information is the first fault level; according to the target proportion of the virtual modules being greater than the first proportion and less than or equal to the second proportion, determining that the second state information is the second fault level; according to the target proportion of the virtual modules being greater than the second proportion, determining that the second state information is the third fault level; wherein, the first proportion and the second proportion increase in magnitude in sequence, and the degree of failure of the first fault level, the second fault level, and the third fault level increases in sequence.

[0017] In this embodiment, when there is one virtual module, the fault level of the target sampling chip is determined according to the size of the target proportion and the preset proportion in the virtual module, so that the fault level of the target sampling chip can be determined quickly.

[0018] In some embodiments, after obtaining the second state information, the method also includes: for each target sampling chip, determining the temperature value of each virtual module according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module; determining the output temperature value of the target sampling chip according to the temperature value of each virtual module.

[0019] This embodiment takes the fault level of the target sampling chip into consideration during the calculation of the temperature value of the virtual module. On the one hand, it can achieve sampling even when the temperature sampling point is faulty, thereby improving the applicable scenarios of temperature sampling. On the other hand, different temperature value processing strategies can be adopted according to different fault levels, thereby improving the accuracy of temperature value calculation.

[0020] In some embodiments, the temperature value of each virtual module is determined according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module, including: when the fault level is lower than the target level, the maximum value of the temperature sampling point in the virtual module and the minimum value of the temperature sampling point in the virtual module are used as the temperature value of the virtual module; when the fault level is higher than the target level, the maximum value and the minimum value of the virtual module at the previous sampling moment are obtained as the temperature value of the virtual module, and the target level is less than the second fault level.

[0021] The above embodiment determines whether to use current data or historical data according to the fault level, which can improve the accuracy of temperature monitoring.

[0022] In some embodiments, the output temperature value of the target sampling chip is determined according to the temperature value of each virtual module, including: taking the maximum value of each virtual module in the target sampling chip as the maximum output temperature of the target sampling chip; taking the minimum value of each virtual module in the target sampling chip as the minimum output temperature of the target sampling chip.

[0023] The above embodiment helps to improve the data reliability of the sampling chip by determining the temperature value of each virtual module and extracting the highest temperature and the lowest temperature of the entire target sampling chip.

[0024] In some embodiments, after determining the output temperature value of the target sampling chip, the method further includes: obtaining the output temperature value of each sampling chip in the target electrical cabinet; and taking the maximum and minimum output temperature values ​​of each sampling chip in the target electrical cabinet as the temperature value of the target electrical cabinet.

[0025] Through the above embodiment, the temperature data of all target sampling chips in the electric cabinet can be integrated, and the temperature condition of the entire electric cabinet can be fully understood, so that the temperature data output by the target electric cabinet is accurate and reliable.

[0026] In a second aspect, a sampling temperature processing device for a battery device is also provided, comprising: a grouping module, used to group the temperature sampling points corresponding to the target sampling chip in response to the virtual module configuration information to obtain at least one virtual module; a data processing module, used to verify the target sampling chip according to the first state information to obtain the second state information, and the second state information is used to calculate the temperature value of the virtual module; the first state information represents whether each temperature sampling point in the at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip, and the fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip; the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within a preset temperature difference range.

[0027] According to a third aspect, an electronic device is provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method described in the first aspect.

[0028] According to a fourth aspect, a computer-readable storage medium is provided, on which a computer program is stored, and the program is executed by a processor to implement any method described in the first aspect.

[0029] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application. In addition, the same reference numerals are used to represent the same parts in all the drawings.

[0031] Figure 1 A flowchart showing a method for processing a temperature sample of a battery device provided in an embodiment of the present application is shown;

[0032] Figure 2 A flowchart showing the steps of fault level classification in one embodiment of the present application is shown;

[0033] Figure 3 Another flowchart showing the steps of fault level classification in a specific example of the present application;

[0034] Figure 4 A schematic diagram showing the structure of a sampling temperature processing device for a battery device provided in an embodiment of the present application is shown;

[0035] Figure 5 A schematic diagram of the structure of an electronic device provided by an embodiment of the present application is shown;

[0036] Figure 6 A schematic diagram of a storage medium provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0037] The following embodiments of the technical solution of the present application will be described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0039] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0042] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0043] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0044] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0045] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0046] The battery apparatus mentioned in the embodiments of the present application may include one or more battery cell assemblies for providing voltage and capacity. The battery cell assembly may include one or more battery cells, and the multiple battery cells are connected in series, in parallel or in mixed connection through a busbar.

[0047] In some embodiments, a battery cell assembly is generally formed by arranging a plurality of battery cells; as an example, a battery cell assembly may be a battery module, and a battery module is formed by arranging and fixing a plurality of battery cells to form an independent module. As an example, a battery module may be formed by bundling a plurality of battery cells by a cable tie.

[0048] In some embodiments, the battery device may be a battery pack, which includes a case and one or more battery cell assemblies, wherein the battery cell assemblies are accommodated in the case.

[0049] As an example, the battery cell assembly may be a battery module, and the battery cell assembly may be accommodated in the box by fixing the battery module in the box.

[0050] As an example, the battery cell assembly may also be housed in the case by directly fixing a plurality of battery cells to the case.

[0051] As an example, the box may include a first box and a second box. The first box and the second box are buckled together to form a closed space inside the box to accommodate the battery cell assembly. The closed here means covered or closed, which can be sealed or unsealed. The first box can be a top cover or a bottom plate.

[0052] As an example, the box body may include a top cover, a frame and a bottom plate. The top cover and the bottom plate are respectively connected to the frame, so that a closed space is formed inside the box body to accommodate the battery cell assembly.

[0053] As an example, the box body can be used as a part of the chassis structure of the vehicle. For example, the top cover of the box body can become at least a part of the floor of the vehicle, or the frame of the box body can become at least a part of the cross beam and longitudinal beam of the vehicle.

[0054] In some embodiments, the battery device refers to an energy storage device, which includes a box body, at least one side of which is provided with a door. The energy storage device includes an energy storage container, an energy storage cabinet, and the like.

[0055] The technical solutions described in the embodiments of the present application are applicable to various electrical devices using battery cells and battery devices, such as mobile phones, portable devices, laptop computers, electric vehicles, electric toys, electric tools, vehicles, ships and spacecraft, for example, spacecraft include airplanes, rockets, space shuttles and spacecraft, etc.

[0056] In the related art, a method for improving the accuracy of battery temperature monitoring data is to use an outlier detection algorithm to identify and eliminate outliers to improve the accuracy of temperature sampling. However, the outlier detection algorithm has restrictions on the number of temperature sensors, requiring that the number of NTCs on the chip can only be a multiple of 3, and the scope of use is limited. This leads to a limited number of applicable sampling chip types, and the existing method needs to be performed in the absence of a sampling temperature failure, which is not suitable for scenarios with a sampling temperature failure. These problems lead to limitations in the applicable scenarios of the temperature sampling method for battery devices.

[0057] In order to solve the above problems, this embodiment provides a sampling temperature processing method for a battery device, which divides the temperature sampling points corresponding to the target sampling chip into multiple groups according to the virtual module configuration information to obtain at least one virtual module. The number of temperature sampling points in the virtual module is determined by the configuration information. In this way, regardless of the number of NTCs (temperature sampling points) of the target sampling chip, the battery temperature can be monitored, which improves the applicable scope of temperature sampling. In addition, this embodiment also verifies the target sampling chip according to the first state information that characterizes whether each temperature sampling point in the virtual module meets the valid conditions, and obtains the second state information that characterizes the fault level of the target sampling chip. Then, the temperature value of the virtual module can be calculated using the second state information, which can realize temperature value detection in the case of NTC failure, further improving the applicable scope of temperature monitoring.

[0058] For the convenience of description, the following embodiments are described by taking the battery device of one embodiment of the present application as a battery monomer assembly, such as a battery cell, as an example.

[0059] Figure 1 A flow chart showing a method for processing a temperature sample of a battery device according to an embodiment of the present application is shown. Figure 1 The sampling temperature processing method of the battery device comprises the following steps:

[0060] S101 . In response to virtual module configuration information, group temperature sampling points corresponding to a target sampling chip to obtain at least one virtual module.

[0061] Virtual module configuration information refers to the information setting for configuring physical hardware modules (such as temperature sampling points) at the virtual level. The configuration basis can be that the user divides the temperature sampling points corresponding to the sampling chip into several groups according to project needs. For example, the sampling chip of a certain project has 6 temperature points, and the virtual module configuration information can be to divide these 6 temperature points into 3 virtual modules, each virtual module has 2 temperature sampling points, or to divide these 6 temperature sampling points into 2 virtual modules, each virtual module has 3 temperature sampling points. Of course, it can also be to divide these 6 temperature sampling points into 1 virtual module, and this virtual module has 6 temperature sampling points. The specific number of groups and the number of temperature sampling points in each group can be set by the user according to needs, and are not specifically limited here. It can be seen that the embodiments of the present application can be adapted to different projects and chips with different temperature sampling points.

[0062] The temperature sampling points in this embodiment refer to specific locations or sensors on a hardware device for measuring temperature. These points can be physical sensors or logical points defined in software for reading temperature data. For example, the temperature sampling points in this embodiment are NTC (negative temperature coefficient) thermistors.

[0063] S102: Verify the target sampling chip according to the first state information to obtain second state information, where the second state information is used to calculate the temperature value of the virtual module.

[0064] Among them, the first state information represents whether each temperature sampling point in at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip. The fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip.

[0065] In one example, the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within a preset temperature difference range. The preset temperature difference range can be determined based on the upper and lower limits of the NTC sampling value, or can be manually set based on the actual temperature value of the battery device. For example, when the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within the preset temperature difference range, the first state information is that the temperature sampling point is valid; when the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is not within the preset temperature difference range, the first state information is that the temperature sampling point is invalid, that is, the first state information includes that the temperature sampling point is valid or the temperature sampling point is invalid. Determining whether each temperature sampling point meets the validity condition can be used to determine the rationality and accuracy of the data collected by the temperature sampling point.

[0066] In one example, the fault level is obtained based on the distribution information of the temperature sampling points that do not meet the valid conditions in the temperature sampling points corresponding to the target sampling chip. For example, if the temperature sampling points that do not meet the valid conditions are 0, that is, all the temperature sampling points corresponding to the target sampling chip are valid, then the fault level is 0, that is, the second state information is that the target sampling chip has no fault. If there are temperature sampling points corresponding to the target sampling chip that do not meet the valid conditions, the fault level is determined based on the distribution information of the temperature sampling points that do not meet the valid conditions in the temperature sampling points corresponding to the target sampling chip. The fault level can include a first fault level, a second fault level, a third fault level, etc., divided according to the degree of fault.

[0067] The distribution information refers to the distribution of the temperature sampling points that do not meet the valid conditions in the whole, such as the location, quantity, proportion, etc. of the temperature sampling points that do not meet the conditions. For example, the distribution information includes the ratio of the number of temperature sampling points that do not meet the valid conditions in each virtual module to the total number of temperature sampling points in each virtual module.

[0068] By obtaining the second state information, the fault condition of the temperature sampling point corresponding to the target sampling chip can be determined, and then the corresponding temperature value determination strategy is selected according to the second state information to obtain a temperature value with higher accuracy, thereby improving the accuracy of the sampling temperature.

[0069] This embodiment divides the temperature sampling points corresponding to the target sampling chip into multiple groups according to the virtual module configuration information to obtain at least one virtual module. It is not limited by the number of temperature sampling points and can be adapted to any type of sampling chip, thereby improving the applicable scope of temperature sampling. It can also process each temperature sampling point and reasonably utilize the temperature sampling points in each sampling chip to determine the fault level of the target sampling chip. The second state information representing the fault level of the target sampling chip is used to calculate the temperature value of the virtual module, so that temperature collection can be performed regardless of whether the sampled temperature is faulty or not. This not only improves the applicable scenarios of temperature sampling, but also improves the calculation accuracy of the temperature sampling value.

[0070] In an embodiment of the present application, the virtual module configuration information includes the number of virtual modules and the number of temperature sampling points in each virtual module, wherein the number of temperature sampling points in each virtual module and the proportion of all temperature sampling points corresponding to the target sampling chip are within a preset range.

[0071] The virtual module configuration information includes the number of virtual modules and the number of temperature sampling points in each virtual module. For example, a chip is configured with 7 NTC sampling points. These 7 NTC sampling points can be distributed on different battery cells or in different positions of the same battery cell. The virtual module configuration information includes that the number of virtual modules is 3, and each virtual module includes 3 NTCs, 2 NTCs, and 2 NTCs respectively.

[0072] In this embodiment, the number of temperature sampling points in each virtual module and the proportion of all temperature sampling points corresponding to the target sampling chip are controlled within a preset range. The number of temperature sampling points in each virtual module and the total number of all temperature sampling points on the entire target sampling chip can be kept within a reasonable ratio. The preset range can be determined based on factors such as the design, performance requirements, and safety standards of the sampling chip.

[0073] In one example, the ratio of the number of temperature sampling points in each virtual module to all temperature sampling points corresponding to the target sampling chip can be determined according to the number of virtual modules. For example, if the number of all temperature sampling points corresponding to the target sampling chip is M and the number of virtual modules in the virtual module configuration information is N, then the ratio of the number of temperature sampling points in each virtual module to all temperature sampling points corresponding to the target sampling chip can be controlled within N / M. For example, if M is 7 and N is 3, then the ratio of the number of temperature sampling points in each virtual module to all temperature sampling points corresponding to the target sampling chip is controlled within 3 / 7.

[0074] This embodiment can achieve uniform distribution of temperature sampling points within the virtual module, improve the calculation accuracy of the target sampling chip fault level, make the temperature data of the virtual module both representative and able to cover the overall temperature change of the sampling data, thereby improving the accuracy and reliability of temperature monitoring.

[0075] In an embodiment of the present application, the target sampling chip is verified according to the first state information to obtain the second state information, including: when all temperature sampling points corresponding to the target sampling chip meet the validity conditions, determining that the second state information is fault-free; when there are temperature sampling points in the target sampling chip that do not meet the validity conditions, the second state information is obtained based on the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and at least one of the first state information of the temperature sampling points.

[0076] Wherein, the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within the preset temperature difference range. The preset temperature difference range can be determined according to the upper and lower limits of the NTC sampling value, or can be manually set according to the actual temperature value of the battery device. For example, when the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within the preset temperature difference range, the first state information is that the temperature sampling point is valid; when the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is not within the preset temperature difference range, the first state information is that the temperature sampling point is invalid, that is, the first state information includes that the temperature sampling point is valid or the temperature sampling point is invalid.

[0077] When all temperature sampling points corresponding to the target sampling chip meet the validity condition, that is, all temperature sampling points corresponding to the target sampling chip are valid, the fault level is 0, and the second state information is determined to be fault-free.

[0078] When the target sampling chip has temperature sampling points that do not meet the validity conditions, it is necessary to calculate the fault level of the target sampling chip based on the distribution information of the temperature sampling points that do not meet the validity conditions in the temperature sampling points corresponding to the target sampling chip, and then obtain the second state information.

[0079] Among them, the distribution information of the temperature sampling points that do not meet the valid conditions in the temperature sampling points corresponding to the target sampling chip can be calculated based on at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points. Therefore, in the case that there are temperature sampling points that do not meet the valid conditions in the target sampling chip, the second state information is obtained based on at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points.

[0080] In this embodiment, the temperature value collected at each temperature sampling point will be checked to see if it meets the valid conditions. By verifying the data of each sampling point, the collected temperature data can be reliable and accurate. When there are temperature sampling points that do not meet the valid conditions, the fault level of the target sampling chip is determined by multiple fault level evaluation factors, which can improve the accuracy of fault detection and provide real and reliable data support for the next step of determining the temperature value.

[0081] In an embodiment of the present application, second state information is obtained based on at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points, including: obtaining a target proportion based on the ratio of the number of temperature sampling points that do not meet the validity conditions in each virtual module to the total number of temperature sampling points in each virtual module; and obtaining the second state information based on a preset matching relationship between the target proportion and the fault level.

[0082] In this embodiment, the number of temperature sampling points that do not meet the validity condition in each virtual module can be obtained according to the first state information.

[0083] The distribution information of the temperature sampling points that do not meet the validity conditions in the temperature sampling points corresponding to the target sampling chip includes the above-mentioned target proportion, that is, the fault level is obtained according to the ratio of the number of temperature sampling points that do not meet the validity conditions in each virtual module to the total number of temperature sampling points in each virtual module.

[0084] In one example, the preset matching relationship between the target proportion and the fault level can be a table or a function, which defines the fault levels corresponding to different target proportions. For example: if the target proportion is less than 5%, the fault level can be a minor fault, if the target proportion is between 5% and 10%, the fault level can be a moderate fault, and if the target proportion exceeds 10%, the fault level can be a severe fault. That is, the second state information can include a minor fault, a moderate fault, and a severe fault.

[0085] In another example, the target proportion represents the distribution of invalid temperature sampling points in each virtual module. Therefore, when there are multiple virtual modules, this embodiment can also combine the number of virtual modules and the target proportions in different virtual modules to obtain the second state information.

[0086] The method based on the preset matching relationship between the target proportion and the fault level in the above embodiment can effectively convert the invalid situation of the temperature sampling point into a specific fault level, providing strong support for the fault level classification of the chip.

[0087] In an embodiment of the present application, the number of virtual modules is greater than 1, and the second state information is obtained according to the preset matching relationship between the target ratio and the fault level, including: according to the target ratios of all virtual modules are not equal to 1, determining that the second state information is the first fault level; according to the number of virtual modules whose target ratios are equal to 1 is equal to 1, determining that the second state information is the second fault level; according to the number of virtual modules whose target ratios are equal to 1 is greater than 1, determining that the second state information is the third fault level.

[0088] The fault degrees of the first fault level, the second fault level, and the third fault level increase in sequence. For example, the first fault level, the second fault level, and the third fault level correspond to a slight fault, a medium fault, and a severe fault, respectively.

[0089] In one example, the target ratio of the virtual modules is equal to 1, that is, the ratio of the number of temperature sampling points that do not meet the validity conditions in the virtual modules to the total number of temperature sampling points is equal to 1, that is, all temperature sampling points in the virtual modules are invalid. It can be seen that the target ratio of all virtual modules is not equal to 1, that is, the number of invalid temperature sampling points in the virtual modules of the target sampling chip is less than the total number of temperature sampling points in the chip, that is, each virtual module has at least one temperature sampling point that meets the validity conditions, then the second state information is determined as the first fault level. This means that although there are some temperature sampling points that do not meet the validity conditions, some temperature sampling points in each module are normal, and the fault level is low.

[0090] If the number of virtual modules whose target ratio in the target sampling chip is equal to 1 is equal to 1, it means that all the temperature sampling points in at least one virtual module are invalid temperature sampling points, then the second state information is the second fault level, which means that at least one virtual module of the target sampling chip has completely failed and the fault level is medium.

[0091] If the number of virtual modules whose target proportions are all equal to 1 is greater than 1, it means that all temperature sampling points in the multiple virtual modules of the target sampling chip do not meet the validity condition, and the second state information is determined to be the third fault level. This means that the temperature sampling points of the multiple virtual modules are completely invalid and the fault level is high.

[0092] In the case of multiple virtual modules, this embodiment combines multiple factors such as the target proportion in each virtual module, the size of the target proportion, the number of virtual modules, and the distribution of the target proportions in different virtual modules to determine the fault level of the target sampling chip, thereby greatly improving the calculation accuracy of the fault level of the target sampling chip.

[0093] In the embodiment of the present application, the number of virtual modules is equal to 1, and the second state information is obtained according to the preset matching relationship between the target proportion and the fault level, including: according to the target proportion of the virtual module being less than or equal to the first proportion, the second state information is determined to be the first fault level; according to the target proportion of the virtual module being greater than the first proportion and less than or equal to the second proportion, the second state information is determined to be the second fault level; according to the target proportion of the virtual module being greater than the second proportion, the second state information is determined to be the third fault level. When the number of virtual modules is equal to 1, there is no target proportion distribution in different virtual modules. Therefore, when the number of virtual modules is equal to 1, only the ratio of the number of temperature sampling points that do not meet the effective conditions to the total number of temperature sampling points in the virtual module needs to be considered, and the calculated target proportion is compared with the preset first proportion and second proportion.

[0094] Among them, the size of the first proportion and the second proportion increases in sequence, and the degree of failure of the first fault level, the second fault level, and the third fault level increases in sequence. Among them, the size of the first proportion and the second proportion can be customized according to the actual sampling accuracy requirements. For example, there are 3 temperature sampling points in the virtual module of the target sampling chip, the first proportion is 1 / 3, and the second proportion is 2 / 3. When there is 1 invalid temperature sampling point, the target proportion is equal to 1 / 3, and the second state information is determined to be the first fault level, that is, a minor fault. When there are 2 invalid temperature sampling points, the target proportion is equal to 2 / 3, and the second state information is determined to be the second fault level, that is, a moderate fault. When there are 3 invalid temperature sampling points, the target proportion is equal to 1. If it is greater than 2 / 3, the second state information is determined to be the third fault level, that is, a serious fault.

[0095] It should be noted that, in addition to the first proportion and the second proportion, the present embodiment may also set other values ​​such as the third proportion and the fourth proportion to divide the fault level into more fourth fault levels, fifth fault levels and other gradients. The specific division rules are the same as those in the above embodiment.

[0096] In this embodiment, when there is one virtual module, the fault level of the target sampling chip is determined according to the size of the target proportion and the preset proportion in the virtual module, so that the fault level of the target sampling chip can be determined quickly.

[0097] In an embodiment of the present application, after obtaining the second state information, the method of this embodiment also includes: for each target sampling chip, determining the temperature value of each virtual module according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module; determining the output temperature value of the target sampling chip according to the temperature value of each virtual module.

[0098] The maximum values ​​of the temperature sampling points in each virtual module are the highest temperature and the lowest temperature, and the maximum values ​​can represent the temperature condition of each virtual module.

[0099] This embodiment obtains the temperature value of the virtual module through the fault level and the maximum value of the temperature sampling point in each virtual module, and then determines the output temperature value of the target sampling chip through the temperature value of the virtual module, so that the step-by-step temperature determination can be achieved, so that the output temperature value of the target sampling chip finally output has higher accuracy.

[0100] This embodiment takes the fault level of the target sampling chip into consideration during the calculation of the temperature value of the virtual module. On the one hand, it can achieve sampling even when the temperature sampling point is faulty, thereby improving the applicable scenarios of temperature sampling. On the other hand, different temperature value processing strategies can be adopted according to different fault levels, thereby improving the accuracy of temperature value calculation.

[0101] In an embodiment of the present application, the temperature value of each virtual module is determined according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module, including: when the fault level is lower than the target level, the maximum value of the temperature sampling point in the virtual module and the minimum value of the temperature sampling point in the virtual module are used as the temperature value of the virtual module; when the fault level is higher than the target level, the maximum value and the minimum value of the virtual module at the previous sampling moment are obtained as the temperature value of the virtual module.

[0102] The target level is smaller than the second fault level, for example, the target level is the first fault level.

[0103] When the fault level is lower than the target level, it means that the fault degree of the chip is relatively light and the temperature data collected at the current moment can be trusted. The maximum value of the temperature sampling point in the virtual module and the minimum value of the temperature sampling point in the virtual module are used as the temperature value of the virtual module.

[0104] When the fault level is higher than the target level, it means that the fault degree of the chip is serious, which will affect the accuracy of the temperature data collected at the current moment. The maximum and minimum values ​​of the virtual module at the last sampling moment are obtained as the temperature value of the virtual module.

[0105] The above embodiment determines whether to use current data or historical data according to the fault level, which can improve the accuracy of temperature monitoring.

[0106] In an embodiment of the present application, the output temperature value of the target sampling chip is determined according to the temperature value of each virtual module, including: taking the maximum value of each virtual module in the target sampling chip as the maximum output temperature of the target sampling chip; taking the minimum value of each virtual module in the target sampling chip as the minimum output temperature of the target sampling chip.

[0107] The temperature value of each virtual module can be obtained through the above embodiment, and then the temperature value of the target sampling chip can be obtained according to the temperature value of each virtual module in the target sampling chip.

[0108] For example, if the target sampling chip has three virtual modules, the maximum temperature of the three virtual modules is used as the maximum output temperature of the target sampling chip, and the minimum temperature of the three virtual modules is used as the minimum output temperature of the target sampling chip.

[0109] The above embodiment helps to improve the data reliability of the sampling chip by determining the temperature value of each virtual module and extracting the highest temperature and the lowest temperature of the entire target sampling chip.

[0110] In an embodiment of the present application, after determining the output temperature value of the target sampling chip, the method of this embodiment also includes: obtaining the output temperature value of each sampling chip in the target electrical cabinet; and taking the maximum and minimum values ​​of the output temperature values ​​of each sampling chip in the target electrical cabinet as the temperature value of the target electrical cabinet.

[0111] In this embodiment, the battery device may be an energy storage cabinet, and the temperature value of the entire cabinet may be determined according to the output temperature value of each target sampling chip in the energy storage cabinet.

[0112] In this embodiment, the output temperature value of each target sampling chip in the target cabinet can be obtained by the above method of determining the output temperature value of the target sampling chip, and then the maximum value Tmax and the minimum value Tmin of the output temperature value of each sampling chip in the target cabinet are used as the temperature value of the target cabinet. Therefore, the temperature data Tmax and Tmin output by the target cabinet to other thermal management modules, thermal runaway modules, overcurrent diagnosis modules, etc. are accurate and reliable.

[0113] Through the above embodiment, the temperature data of all target sampling chips in the electric cabinet can be integrated, and the temperature condition of the entire electric cabinet can be fully understood, so that the temperature data output by the target electric cabinet is accurate and reliable.

[0114] The sampling temperature processing method of the battery device according to the embodiment of the present application is described below with a specific example.

[0115] Receive virtual module configuration information input by the user, the virtual module configuration information corresponds to a target sampling chip, the target sampling chip corresponds to 7 NTCs, assuming that the virtual module configuration information includes 3 virtual modules, the number of temperature sampling points in each virtual module is 3 NTCs, 2 NTCs, and 2 NTCs, respectively, and 3 virtual modules are obtained.

[0116] In response to the virtual module configuration information, the temperature sampling points corresponding to the target sampling chip are grouped to obtain three virtual modules including 3 NTCs, 2 NTCs, and 2 NTCs respectively.

[0117] Then, the first state information of the target sampling chip is judged according to whether each temperature sampling point in the three virtual modules meets the validity conditions, and the second state information characterizing the fault level of the target sampling chip is obtained according to the distribution information of the temperature sampling points that do not meet the validity conditions in the temperature sampling points corresponding to the target sampling chip.

[0118] Among them, the method of judging the fault level is as follows: Figure 2 As shown, Figure 2 A flowchart of the fault level classification steps in one embodiment of the present application is shown as follows: Figure 2 As shown, it is determined whether all temperature sampling points (NTC) in the virtual module corresponding to the target sampling chip are valid, that is, all temperature sampling points meet the validity conditions. If so, the target sampling chip has no fault. If not, further judgment is made based on the number of virtual modules. When the number of virtual modules is greater than 1, it is determined whether there are virtual modules in which all NTCs are invalid. If not, it means that there is at least one normal NTC in each virtual module, and the target sampling chip is judged to have a slight fault. If there are virtual modules in which all NTCs are invalid, the fault level is determined based on the number of virtual modules in which all NTCs are invalid. When the number of virtual modules in which all NTCs are invalid is equal to 1, it means that there is a virtual module in the target sampling chip in which all NTC sampling data are unavailable. At this time, the fault level is determined to be a medium fault. When the number of virtual modules in which all NTCs are invalid is greater than 1, the fault level is determined to be a severe fault.

[0119] When the number of virtual modules is equal to 1, it means that the target sampling chip has only one virtual module. In this case, it is only necessary to consider the impact of the invalid NTC in the virtual module on the overall situation. The fault level of the target sampling chip is judged by the ratio of the invalid NTC to the total number of NTCs in the virtual module, that is, the target ratio. When the target ratio is less than or equal to the first ratio, it means that the number of invalid NTCs is small and the impact on the overall sampling result is not significant. The fault level is determined to be a minor fault. When the target ratio is greater than the first ratio and less than or equal to the second ratio, it means that the number of invalid NTCs is medium. The fault level is determined to be a medium fault. When the target ratio is greater than the second ratio, it means that the number of invalid NTCs is large. The fault level is determined to be a severe fault.

[0120] Figure 3 Another flowchart showing the steps of fault level classification in a specific example of the present application is shown as follows: Figure 3As shown, when the target sampling chip has only one virtual module and the number of NTCs in the virtual module is less than or equal to 3, if the number of NTCs is equal to 3 and 1 NTC is invalid, the target sampling chip is determined to have a slight fault. If the number of NTCs is equal to 3 and 2 NTCs are invalid, the target sampling chip is determined to have a moderate fault. If the number of NTCs is equal to 3 and 3 NTCs are invalid, the target sampling chip is determined to have a serious fault. If all 3 NTCs are valid, there is no fault. If the number of NTCs is equal to 2 and 1 NTC is invalid, the target sampling chip is determined to have a slight fault. If 2 NTCs are invalid, it means that all temperature sampling points are invalid. The target sampling chip is determined to have a serious fault. If both NTCs are valid, there is no fault.

[0121] The above method can be used to obtain the fault level of the target sampling chip, and then determine the temperature value of each virtual module according to the fault level and the maximum value of the temperature sampling point in each virtual module; when the fault level is lower than the target level, it means that the fault degree of the chip is relatively light, and the temperature data collected at the current moment can be trusted, and the maximum value of the temperature sampling point in the virtual module and the minimum value of the temperature sampling point in the virtual module are used as the temperature value of the virtual module. When the fault level is higher than the target level, it means that the fault degree of the chip is relatively heavy, which will affect the accuracy of the temperature data collected at the current moment, and the maximum and minimum values ​​of the virtual module at the previous sampling moment are obtained as the temperature value of the virtual module.

[0122] After obtaining the temperature value of the virtual module, the output temperature value of the target sampling chip is determined according to the temperature value of each virtual module, and the maximum value of each virtual module is used as the maximum output temperature value of the target sampling chip; the minimum value of each virtual module in the target sampling chip is used as the minimum output temperature value of the target sampling chip. Furthermore, the output temperature value of the target cabinet can be calculated according to the maximum and minimum output temperatures of all target sampling chips in the target cabinet.

[0123] This embodiment divides the temperature sampling points corresponding to the target sampling chip into multiple groups according to the virtual module configuration information to obtain at least one virtual module. The number of temperature sampling points in the virtual module is determined by the configuration information. In this way, battery temperature monitoring can be performed regardless of the number of NTCs (temperature sampling points) of the target sampling chip, thereby improving the applicable scope of temperature sampling. In addition, this embodiment also verifies the target sampling chip according to the first state information that characterizes whether each temperature sampling point in the virtual module meets the valid condition, and obtains the second state information that characterizes the fault level of the target sampling chip. The second state information can then be used to calculate the temperature value of the virtual module, so that temperature value detection can still be performed in the case of NTC failure, further improving the applicable scope of temperature monitoring.

[0124] Figure 4 A schematic diagram of the structure of a sampling temperature processing device for a battery device provided in an embodiment of the present application is shown. Figure 4 As shown, the sampling temperature processing device 400 of the battery device includes:

[0125] The grouping module 401 is used to group the temperature sampling points corresponding to the target sampling chip in response to the virtual module configuration information to obtain at least one virtual module.

[0126] The data processing module 402 is used to verify the target sampling chip according to the first state information to obtain the second state information, wherein the second state information is used to calculate the temperature value of the virtual module, the first state information represents whether each temperature sampling point in the at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip, and the fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip.

[0127] In one example, the data processing module 402 is also used to determine that the second state information is fault-free when all temperature sampling points corresponding to the target sampling chip meet the validity condition; when there are temperature sampling points in the target sampling chip that do not meet the validity condition, the second state information is obtained according to the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and at least one of the first state information of the temperature sampling point; wherein the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within a preset temperature difference range.

[0128] In one example, the data processing module 402 is also used to obtain a target proportion based on the ratio of the number of temperature sampling points that do not meet the validity condition in each virtual module to the total number of temperature sampling points in each virtual module, and the distribution information includes the target proportion; and obtain the second state information based on a preset matching relationship between the target proportion and the fault level.

[0129] In one example, the number of virtual modules is greater than 1, and the data processing module 402 is further used to determine that the second state information is a first fault level based on the target proportions of all virtual modules being not equal to 1; determine that the second state information is a second fault level based on the number of virtual modules whose target proportions are equal to 1 being equal to 1; determine that the second state information is a third fault level based on the number of virtual modules whose target proportions are equal to 1 being greater than 1, wherein the fault degrees of the first fault level, the second fault level, and the third fault level increase in sequence.

[0130] In one example, the number of virtual modules is equal to 1, and the data processing module 402 is also used to determine that the second state information is a first fault level based on that the target proportion of the virtual modules is less than or equal to the first proportion; determine that the second state information is a second fault level based on that the target proportion of the virtual modules is greater than the first proportion and less than or equal to the second proportion; determine that the second state information is a third fault level based on that the target proportion of the virtual modules is greater than the second proportion; wherein the sizes of the first proportion and the second proportion increase successively, and the degree of faults of the first fault level, the second fault level, and the third fault level increase successively.

[0131] In one example, the data processing module 402 is also used to determine, after obtaining the second state information, for each target sampling chip, the temperature value of each virtual module according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module; and determine the output temperature value of the target sampling chip according to the temperature value of each virtual module.

[0132] In one example, the data processing module 402 is also used to, when the fault level is lower than the target level, use the maximum value of the temperature sampling points in the virtual module and the minimum value of the temperature sampling points in the virtual module as the temperature value of the virtual module; when the fault level is higher than the target level, obtain the maximum value and minimum value of the virtual module at the last sampling moment as the temperature value of the virtual module, and the target level is less than the second fault level.

[0133] In one example, the data processing module 402 is further configured to use the maximum value of each virtual module in the target sampling chip as the maximum output temperature of the target sampling chip; and use the minimum value of each virtual module in the target sampling chip as the minimum output temperature of the target sampling chip.

[0134] In one example, after determining the output temperature value of the target sampling chip, the data processing module 402 is further used to obtain the output temperature value of each sampling chip in the target electrical cabinet; and take the maximum and minimum output temperature values ​​of each sampling chip in the target electrical cabinet as the temperature value of the target electrical cabinet.

[0135] The sampling temperature processing device of the battery device provided in the above-mentioned embodiment of the present application and the sampling temperature processing method of the battery device provided in the embodiment of the present application are based on the same application concept and have the same beneficial effects as the methods adopted, run or implemented by the application programs stored therein.

[0136] The above description of various embodiments tends to emphasize the differences between the various embodiments. The same or similar aspects can be referenced to each other, and for the sake of brevity, they will not be repeated herein.

[0137] The embodiment of the present application further provides an electronic device corresponding to the sampling temperature processing method of the battery device provided in the above embodiment, so as to execute the sampling temperature processing method of the battery device.

[0138] Please refer to Figure 5 , which shows a schematic diagram of an electronic device provided by some embodiments of the present application. Figure 5 As shown, the electronic device 20 includes: a processor 200, a memory 201, a bus 202 and a communication interface 203, and the processor 200, the communication interface 203 and the memory 201 are connected via the bus 202; the memory 201 stores a computer program that can be run on the processor 200, and the processor 200 executes the method provided in any of the aforementioned embodiments of the present application when running the computer program.

[0139] The memory 201 may include a high-speed random access memory (RAM), and may also include a non-volatile memory, such as at least one disk memory. The communication connection between the system network element and at least one other network element is realized through at least one communication interface 203 (which may be wired or wireless), and the Internet, wide area network, local area network, metropolitan area network, etc. may be used.

[0140] The bus 202 may be an ISA bus, a PCI bus, or an EISA bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. The memory 201 is used to store programs, and the processor 200 executes the programs after receiving execution instructions. The sampling temperature processing method of the battery device disclosed in any implementation of the embodiment of the present application may be applied to the processor 200, or implemented by the processor 200.

[0141] The processor 200 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit or software instructions in the processor 200. The above processor 200 can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a readily available programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc. The steps of the method disclosed in the embodiments of the present application can be directly embodied as a hardware decoding processor to be executed, or the hardware and software modules in the decoding processor can be executed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory 201, and the processor 200 reads the information in the memory 201 and completes the steps of the above method in combination with its hardware.

[0142] The electronic device provided in the embodiment of the present application and the sampling temperature processing method of the battery device provided in the embodiment of the present application are based on the same application concept and have the same beneficial effects as the methods adopted, operated or implemented therein.

[0143] The present application also provides a computer-readable storage medium corresponding to the sampling temperature processing method of the battery device provided in the above embodiment. Figure 6 , which shows a computer-readable storage medium 30, which may be a CD, on which a program product is stored, which may be an operating system, application software, game, tool software, etc. The program product includes a computer program, which usually exists in source code or compiled binary form. When the computer program is run by a processor, it will execute the sampling temperature processing method of the battery device provided in any of the aforementioned embodiments.

[0144] It should be noted that examples of the computer-readable storage medium may also include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other optical or magnetic storage media, which are not listed here one by one.

[0145] The computer-readable storage medium provided in the above-mentioned embodiment of the present application and the sampling temperature processing method of the battery device provided in the embodiment of the present application are based on the same application concept and have the same beneficial effects as the method adopted, run or implemented by the application program stored therein.

[0146] It should be noted that:

[0147] In the above text, the term "comprises", "includes" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be noted that the scope of the method and device in the embodiment of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0148] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, a magnetic disk, or an optical disk), and includes a number of instructions for a terminal (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in each embodiment of the present application.

[0149] The embodiments of the present application are described above in conjunction with the accompanying drawings, which are only specific implementation modes of the present application. However, the present application is not limited to the above-mentioned specific implementation modes. The above-mentioned specific implementation modes are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A method for processing sampling temperature of a battery device, characterized in that: The method comprises: In response to the virtual module configuration information, the temperature sampling points corresponding to the target sampling chip are grouped to obtain at least one virtual module, and the proportion of the number of temperature sampling points in each virtual module to all temperature sampling points corresponding to the target sampling chip is determined according to the number of the virtual modules; Verify the target sampling chip according to the first state information to obtain second state information, where the second state information is used to calculate the temperature value of the virtual module; The first state information represents whether each temperature sampling point in the at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip, and the fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip; the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within the preset temperature difference range; Among them, when there are temperature sampling points in the target sampling chip that do not meet the validity conditions, the second state information is obtained according to at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points.

2. The method according to claim 1, characterized in that The virtual module configuration information includes the number of virtual modules and the number of temperature sampling points in each virtual module, wherein the number of temperature sampling points in each virtual module and the ratio of all temperature sampling points corresponding to the target sampling chip are within a preset range.

3. The method according to claim 1, characterized in that The step of verifying the target sampling chip according to the first state information to obtain the second state information includes: When all temperature sampling points corresponding to the target sampling chip meet the validity condition, it is determined that the second state information is fault-free.

4. The method according to claim 1, characterized in that The second state information is obtained according to at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling points, including: Obtaining a target proportion according to a ratio of the number of temperature sampling points that do not meet the validity condition in each virtual module to the total number of temperature sampling points in each virtual module, wherein the distribution information includes the target proportion; The second state information is obtained according to a preset matching relationship between the target proportion and the fault level.

5. The method according to claim 4, characterized in that The number of the virtual modules is greater than 1, and the second state information is obtained according to a preset matching relationship between the target proportion and the fault level, including: According to the target proportions of all virtual modules being not equal to 1, determining that the second state information is a first fault level; According to the number of virtual modules whose target proportion is equal to 1 being equal to 1, determining that the second state information is a second fault level; According to the number of virtual modules whose target proportion is equal to 1 being greater than 1, it is determined that the second state information is a third fault level, wherein the fault degrees of the first fault level, the second fault level, and the third fault level increase in sequence.

6. The method according to claim 4, characterized in that The number of the virtual modules is equal to 1, and the second state information is obtained according to the preset matching relationship between the target proportion and the fault level, including: According to the target proportion of the virtual modules being less than or equal to the first proportion, determining that the second state information is a first fault level; According to the target proportion of the virtual module being greater than the first proportion and less than or equal to the second proportion, determining that the second state information is a second fault level; According to the target proportion of the virtual module being greater than the second proportion, the second state information is determined to be the third fault level; wherein the first proportion and the second proportion increase in sequence, and the degree of faults of the first fault level, the second fault level, and the third fault level increase in sequence.

7. The method according to claim 1, characterized in that After obtaining the second state information, the method further includes: For each target sampling chip, according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module, determine the temperature value of each virtual module; According to the temperature value of each virtual module, the output temperature value of the target sampling chip is determined.

8. The method according to claim 7, characterized in that Determining the temperature value of each virtual module according to the fault level of the target sampling chip and the maximum value of the temperature sampling point in each virtual module includes: When the fault level is lower than the target level, taking the maximum value of the temperature sampling points in the virtual module and the minimum value of the temperature sampling points in the virtual module as the temperature value of the virtual module; When the fault level is higher than the target level, the maximum and minimum values ​​of the virtual module at the last sampling moment are obtained as the temperature value of the virtual module, and the target level is lower than the second fault level.

9. The method according to claim 7, characterized in that: According to the temperature value of each virtual module, the output temperature value of the target sampling chip is determined, including: Taking the maximum value of each virtual module in the target sampling chip as the maximum output temperature of the target sampling chip; The minimum value of each virtual module in the target sampling chip is used as the minimum output temperature of the target sampling chip.

10. The method according to claim 1, characterized in that After determining the output temperature value of the target sampling chip, the method further includes: Obtain the output temperature value of each sampling chip in the target electrical cabinet; The maximum and minimum values ​​of the output temperature values ​​of the sampling chips in the target electric cabinet are used as the temperature value of the target electric cabinet.

11. A sampling temperature processing device for a battery device, characterized in that: include: A grouping module, configured to group the temperature sampling points corresponding to the target sampling chip in response to the virtual module configuration information to obtain at least one virtual module, wherein the number of temperature sampling points in each virtual module and the proportion of all temperature sampling points corresponding to the target sampling chip are determined according to the number of the virtual modules; A data processing module, used to verify the target sampling chip according to the first state information to obtain second state information, wherein the second state information is used to calculate the temperature value of the virtual module; The first state information represents whether each temperature sampling point in the at least one virtual module meets the validity condition, and the second state information represents the fault level of the target sampling chip, and the fault level is obtained according to the distribution information of the temperature sampling points that do not meet the validity condition in the temperature sampling points corresponding to the target sampling chip; the validity condition includes that the deviation between the temperature value collected by the temperature sampling point and the preset temperature value is within a preset temperature difference range; wherein, when there are temperature sampling points in the target sampling chip that do not meet the validity condition, the second state information is obtained according to at least one of the number of virtual modules in the target sampling chip, the number of temperature sampling points in each virtual module, and the first state information of the temperature sampling point.

12. An electronic device, characterized in that: The method comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method according to any one of claims 1 to 10.

13. A computer-readable storage medium having a computer program stored thereon, characterized in that: The program is executed by a processor to implement the method according to any one of claims 1 to 10.

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