Multiport Microcavity Chaotic Laser and Its Control Method

By designing a multi-port microcavity chaotic laser, and utilizing a combination of arc-edge polygonal whispering cavities and ohmic contact windows, efficient output and stability of multiple chaotic signals were achieved, overcoming the limitations of single-port output in existing technologies and reducing system complexity and cost.

CN119315380BActive Publication Date: 2025-12-02INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202310849076.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-07-11
Publication Date
2025-12-02
Estimated Expiration
2043-07-11

AI Technical Summary

Technical Problem

Existing integrated or on-chip chaotic lasers are mostly single-port outputs, which are difficult to meet the application requirements of multi-channel chaotic signals. The systems are complex and costly. Traditional methods require external optical injection or optical feedback, which results in poor stability and low quality of chaotic signals.

Method used

A multi-port microcavity chaotic laser is designed, employing N whispering cavities arranged diagonally and coupled together. An arc-edge polygonal structure forms total internal reflection, an ohmic contact window is used for non-uniform current injection, and a waveguide provides directional output, thereby controlling the chaotic laser mode and power.

Benefits of technology

It enables simultaneous output of multiple chaotic signals, improves laser output power and stability, reduces system complexity and cost, and is suitable for on-chip random number generation and optical computing.

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Abstract

This disclosure provides a multi-port microcavity chaotic laser, comprising: N whispering cavities (1) arranged sequentially along a diagonal, wherein adjacent whispering cavities (1) are intersected and coupled by N≥2; an ohmic contact window (2) located at the upper end of the N whispering cavities (1) for non-uniform current injection to generate chaotic laser; and M waveguides (3) connected to the outer wall of at least one of the N whispering cavities (1) and parallel to one of the diagonals of the whispering cavities (1), forming a symmetrical structure with the N whispering cavities (1) for directional output of chaotic laser, wherein M is a multiple of 1 or 2. This disclosure also provides a method for controlling the multi-port microcavity chaotic laser, which can improve the output power and chaotic bandwidth of the multi-port microcavity chaotic laser, solving the problem of simultaneously obtaining multiple chaotic optical signals in the field of photonic integration.
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Description

Technical Field

[0001] This disclosure relates to the fields of semiconductor optoelectronics, optical computing and random number generation, and in particular to a multi-port microcavity chaotic laser and its control method. Background Technology

[0002] Optical chaotic signals possess characteristics such as randomness and large spectral bandwidth, making them valuable for applications in physical random number generation, secure communication, sensing and detection, and photonic computing. Traditional semiconductor lasers require external optical injection, optical feedback, or photoelectric feedback to introduce perturbations and achieve chaotic output, resulting in complex system structures and poor operational stability. On-chip photonic integrated chaotic lasers based on optical feedback achieve size reduction, but secondary epitaxy requires complex processes, leading to high mass production costs. Furthermore, the weak periodicity introduced by optical feedback is unavoidable, degrading the quality of the chaotic signal.

[0003] Currently developed integrated or on-chip chaotic lasers are all single-port outputs. In applications requiring multiple chaotic signals simultaneously, discrete components must be used for beam splitting or multiple chaotic lasers must be employed, leading to system complexity and hindering integrated applications. For example, current random number generators based on chaotic signals require post-processing, and many post-processing methods often require splitting the original chaotic signal into two; many parallel random number generators can improve the random number generation rate by processing multiple chaotic signals; and many optical computations require multiple signal inputs. Therefore, it is necessary to propose a multi-port semiconductor chaotic laser for integrated applications. Summary of the Invention

[0004] In view of the above problems, the present invention provides a multi-port microcavity chaotic laser and its control method to solve at least one of the above technical problems.

[0005] This disclosure provides a multi-port microcavity chaotic laser, comprising: N whispering cavities arranged sequentially along a diagonal, wherein adjacent whispering cavities are intersected and coupled, the cross-section of each whispering cavity is an arc-sided polygon, adjacent vertices of the arc-sided polygon are connected to form a regular polygon with sides of equal radian, for forming total internal reflection of light, where N≥2; an ohmic contact window, in which a P-electrode layer is deposited to form a metal layer, located at the upper end of the N whispering cavities, for non-uniform current injection to achieve nonlinear interaction of modes to generate chaotic laser; and M waveguides, which are contacted and connected to the outer wall of at least one of the N whispering cavities and are parallel to one of the diagonals of the whispering cavities, forming a symmetrical structure with the N whispering cavities, for directional output of chaotic laser, where M is a multiple of 1 or 2.

[0006] According to embodiments of this disclosure, the center distance between two adjacent whispering cavities is associated with the number of chaotic laser modes.

[0007] According to an embodiment of this disclosure, a groove is formed inward at the intersection of two adjacent sounding wall cavities to control the number of chaotic laser modes.

[0008] According to an embodiment of this disclosure, the arc-side shape variable of the arc-side polygon is:

[0009]

[0010] Where a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the radius of the arc edge of the arc-edge polygon, and δ is the amount of arc edge deformation.

[0011] According to embodiments of this disclosure, the whispering cavity and the waveguide have the same structure, comprising, from bottom to top: a first confinement layer for confining the optical field of the chaotic laser; an active region layer for providing a gain medium for the chaotic laser; a second confinement layer for confining the optical field of the chaotic laser; and an ohmic contact layer for reducing contact resistance.

[0012] According to embodiments of this disclosure, the device further includes: an N-type substrate disposed at the bottom of the first confinement layer for supporting the multi-port microcavity chaotic laser; and an N-electrode layer disposed below the N-type substrate for cooperating with the P-electrode layer to realize current injection into the multi-port microcavity chaotic laser.

[0013] According to embodiments of this disclosure, the sounding-gallery cavity is an active cavity, and its material structure is a quantum well or a quantum dot structure.

[0014] According to embodiments of this disclosure, the sounding wall cavity is a square, hexagonal, octagonal, arc-edged quadrilateral, arc-edged hexagonal, or arc-edged octagonal structure.

[0015] According to embodiments of this disclosure, the light exit port of the waveguide is a cleaved surface or an end-face coated structure.

[0016] Another aspect of this disclosure provides a method for controlling a multi-port microcavity chaotic laser, applied to a multi-port microcavity chaotic laser as described in any one of the first aspects, comprising: adjusting the output power of the chaotic laser by setting the number of whispering cavities, wherein the more whispering cavities there are, the higher the output power of the laser; and adjusting the center distance between adjacent whispering cavities to control the number of chaotic laser modes generated by the multi-port microcavity chaotic laser.

[0017] The above-described at least one technical solution adopted in the embodiments of this disclosure can achieve the following beneficial effects:

[0018] (1) The multi-port microcavity chaotic laser can form a single cavity with a larger cavity area by overlapping multiple whispering cavities, thereby increasing the output power of the monolithic microcavity chaotic laser; the number of modes can be effectively controlled by controlling the depth of the concave corner, and the chaotic bandwidth can be increased by utilizing the optical-optical resonance effect.

[0019] (2) The multi-port microcavity chaotic laser can have multiple output ports and can output multiple chaotic signals simultaneously, which facilitates on-chip integration of random number application post-processing and realizes on-chip random number generator; facilitates the implementation of parallel random numbers; and solves the multi-input requirement in optical computing applications.

[0020] (3) Compared with traditional chaotic laser schemes, this multi-port microcavity chaotic laser does not require external light injection, external light feedback or photoelectric feedback. The system is simple, has high stability, no feedback delay peak in the chaotic signal, large bandwidth of the on-chip chaotic signal, and high quality of the chaotic signal.

[0021] (4) The fabrication process of this multi-port microcavity chaotic laser is simple, requiring no secondary epitaxy, no complex active or passive integration technology, and no hybrid integration technology. It is low in cost and has important application value in physical random number generation, secure communication, chaotic detection and photonic computing. Attached Figure Description

[0022] To gain a more complete understanding of this disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, wherein:

[0023] Figure 1A and 1B The three-dimensional structural diagram and the planar structural diagram of a polygonal microcavity chaotic laser provided in the embodiments of this disclosure are shown respectively.

[0024] Figure 2A-2D The illustrations schematically depict various polygonal multi-port microcavity chaotic lasers provided in embodiments of this disclosure;

[0025] Figure 3A and 3B The diagrams illustrate a planar structure and a three-dimensional structure of a dual-port microcavity chaotic laser according to embodiments of the present disclosure.

[0026] Figure 4A and 4B The diagrams schematically illustrate the fundamental mode and first-order mode field distributions of a chaotic laser generated by a dual-port microcavity chaotic laser according to an embodiment of the present disclosure.

[0027] Figure 5 The diagram schematically illustrates the power-current plots of two output ports of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure.

[0028] Figure 6A and 6B The diagram schematically illustrates the chaotic signal spectra of the two output ports of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure, measured at an injection current of 29 mA.

[0029] Figure 7A and 7B The diagram schematically illustrates the chaotic signal spectra of the two output ports of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure, measured at an injection current of 29 mA.

[0030] Figure 8A and 8B The diagram schematically illustrates the autocorrelation function of the timing signals of the two output ports of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure, measured at an injection current of 29 mA.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1-Speaking galvanic cavity; 2-Ohmic contact window; 3-Waveguide;

[0033] 101 - N-electrode layer, 102 - N-type substrate, 103 - lower confinement layer, 104 - active region layer, 105 - upper confinement layer, 106 - ohmic contact layer, 107 - P-electrode layer. Detailed Implementation

[0034] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0036] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0037] To address the issues of low output power and limited chaotic operating current range in existing microcavity chaotic lasers, this disclosure proposes a multi-port microcavity chaotic laser. While meeting the requirements for chaotic laser generation, it can effectively increase the size of the whispering cavity, suppress higher-order transverse modes, improve the waveguide coupling output efficiency of the laser, increase the output power of the chaotic laser, and expand the chaotic operating current range.

[0038] This disclosure provides a multi-port microcavity chaotic laser, comprising: N whispering cavities 1 arranged sequentially along a diagonal, wherein adjacent whispering cavities 1 are intersected and coupled, the cross-section of each whispering cavity 1 is an arc-sided polygon, adjacent vertices of the arc-sided polygon are connected to form a regular polygon, and the sides are arc edges of the same radian, for forming total internal reflection of light, N≥2; Ohmic contact windows 2, forming P-electrode layers 107 by depositing metal in the windows, all located at the upper ends of the N whispering cavities 1, for non-uniform current injection to achieve nonlinear interaction of modes to generate chaotic laser; M waveguides 3, at least one of the N whispering cavities 1 is contacted and connected to the outer wall of the whispering cavities 1, and parallel to one of the diagonals of the whispering cavities 1, forming a symmetrical structure with the N whispering cavities 1, for directional output of chaotic laser, M being a multiple of 1 or 2.

[0039] According to the present disclosure, a multi-port microcavity chaotic laser can effectively increase the size of the whispering cavity, suppress higher-order transverse modes, improve the output power of the chaotic laser, expand the range of chaotic operating current, and realize the simultaneous output of multiple chaotic channels while meeting the requirements for chaotic laser generation. This solves the problems of low output power and small range of chaotic operating current in existing microcavity chaotic lasers.

[0040] Figure 1A and 1B The diagrams illustrate, respectively, a three-dimensional structural schematic and a planar structural schematic of a polygonal microcavity chaotic laser provided in an embodiment of the present disclosure.

[0041] like Figure 1A and 1BAs shown in the embodiment of this disclosure, in a multi-port microcavity chaotic laser, the whispering-gallery cavity 1 and the waveguide 3 have identical structures, comprising, from bottom to top, an N-electrode layer 101, an N-type substrate layer 102, a lower limiting layer 103, an active region layer 104, an upper limiting layer 105, and an ohmic contact layer 106. The first limiting layer 103 is used to confine the optical field of the chaotic laser; the active region layer 104 is used to provide a gain medium for the chaotic laser; the second limiting layer 105 is used to confine the optical field of the chaotic laser; and the ohmic contact layer 106 is used to reduce contact resistance. The N-type substrate 102 is disposed at the bottom of the first limiting layer 103 to support the multi-port microcavity chaotic laser; the N-electrode layer 101 is disposed below the N-type substrate 102 to cooperate with the ohmic contact window 2 to achieve current injection into the multi-port microcavity chaotic laser. The ohmic contact window 2 is located at the upper end of the whispering-gallery cavity 1 and is used for non-uniform current injection to achieve nonlinear interaction of modes, thereby generating chaotic laser light. Optionally, the ohmic contact window 2 can be multiple windows, evenly distributed at the upper ends of the N whispering cavities; the ohmic contact window 2 can also be a ring structure, symmetrically arranged at the upper ends of the N whispering cavities. The figure schematically shows a waveguide 3 connected to the outer wall of the whispering cavity 1 for directional output of chaotic laser.

[0042] Optionally, the waveguide 3 and the whispering cavity 1 in the multi-port microcavity chaotic laser provided in this embodiment can be made of the same material and using the same process, or they can be made of different materials. The active region of the whispering cavity 1 has a quantum well structure or a quantum dot structure, and injecting current into it can provide optical gain and can form total internal reflection of light.

[0043] like Figure 1B As shown, the cross-section of the sounding wall cavity 1 is a curved-edge polygon. Adjacent vertices of this curved-edge polygon are connected to form a regular polygon, and all sides are curved edges with the same radius. The curvature of this curved-edge polygon is:

[0044]

[0045] Where a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the radius of the arc edge of the arc-edge polygon, and δ is the amount of arc edge deformation.

[0046] Optionally, the sounding wall cavity 1 can be a square, hexagon, octagon, quadrilateral with curved edges, hexagon with curved edges, or octagon with curved edges, with no specific limitation.

[0047] In this embodiment, the center distance between two adjacent whispering cavities 1 is associated with the number of chaotic laser modes. Furthermore, the depth of the angle formed at the intersection of two adjacent whispering cavities 1 can also control the number of chaotic laser modes. Based on this, this disclosure also provides a method for controlling a multi-port microcavity chaotic laser.

[0048] This disclosure also provides a method for controlling a multi-port microcavity chaotic laser. One aspect includes adjusting the output power of the chaotic laser by setting the number of whispering cavities 1; the more whispering cavities 1, the higher the laser output power. Another aspect includes controlling the center distance between two overlapping cavities, controlling the depth of the angle formed, and thus controlling the number of modes. Furthermore, the method also includes creating inward grooves at the intersection of two adjacent whispering cavities 1, which can also adjust the number of chaotic laser modes.

[0049] In this embodiment, each waveguide 3 is parallel to each other and has the same output direction, or the output directions of each waveguide 3 are different, forming a symmetrical structure together with N sounding wall cavities 1. Figures 2A-2D The schematic diagram illustrates a planar structure of a multi-port microcavity chaotic laser provided in an embodiment of this disclosure.

[0050] Figures 2A-2D A multi-port microcavity chaotic laser with an arc-sided quadrilateral whispering-gallery cavity 1 is shown. Figure 2A In the diagram, there are two waveguides 3, and the two waveguides 3 (P1, P2) are symmetrically arranged with respect to a diagonal line (the diagonal line along the arrangement direction of the two sound-gallery cavities 1) of the sound-gallery cavity 1, and are both parallel to the diagonal line, forming a two-port waveguide 3 distribution with opposite laser emission directions; Figure 2B In the diagram, there are two waveguides 3, and the two waveguides 3 (P1, P2) are arranged parallel to each other along a diagonal line (the diagonal line along the arrangement direction of the two sound-gallery cavities 1) relative to the sound-gallery cavity 1, forming a two-port waveguide distribution with the same laser emission direction; Figure 2C In this configuration, there are two waveguides 3. The two waveguides 3 (P1, P2) are arranged parallel to each other along a diagonal line of the sound-gallery cavity 1 (perpendicular to the diagonal line of the arrangement direction of the two sound-gallery cavities 1), forming a waveguide distribution for two output ports. Figure 2D In the middle, there are 4 waveguides 3. Two waveguides 3 (P1, P2, P3, P4) are symmetrically arranged with respect to a diagonal line (the diagonal line perpendicular to the arrangement direction of the two sound-gallery cavities 1) of the sound-gallery cavity 1, and are arranged parallel to each other, forming a waveguide distribution with four output ports.

[0051] It should be noted that, Figures 2A-2D This is merely an illustrative example; technicians can select the specific number of waveguides 3 based on the shape of the sound-gallery cavity and specific requirements.

[0052] This multi-port microcavity chaotic laser has a simple manufacturing process, requires no secondary epitaxy, no complex active or passive integration technology, and no hybrid integration technology. It is low in cost and has important application value in on-chip random number generation and optical information processing.

[0053] refer to Figure 3A and 3B The diagram shows a planar structure and a three-dimensional structure of a multi-port microcavity chaotic laser. It should be noted that only one whispering cavity 1 is schematically shown in the figure.

[0054] like Figure 3A As shown, the entire laser material layer, from bottom to top, may include an N-electrode layer 101, an N-type substrate layer 102, a first confinement layer 103, an active region layer 104, a second confinement layer 105, an ohmic contact layer 106, and a P-electrode layer 107. A whispering cavity 1, an annular ohmic contact window 2, and a waveguide 3 are etched onto these material layers. The whispering cavity 1 has a cross-section of a closed polygon composed of edges and points. It is an active cavity with a quantum well or quantum dot structure, capable of total internal reflection of light. The annular ohmic contact window 2, located at the upper end of the whispering cavity 1 and coaxial with it, is used for non-uniform current injection to achieve nonlinear interaction of modes, thereby generating chaotic laser light. The waveguide 3 is connected to the outer wall of the whispering cavity 1 and is used for directional output of one or more chaotic laser beams.

[0055] Optionally, the sounding wall cavity 1 is a closed polygon composed of edges and points, without any specific limitation.

[0056] Optionally, the number of waveguides 3 can be one or more. Multiple waveguides can be distributed on the same side of the microcavity and emit light in the same direction, or they can be distributed on both sides of the microcavity and emit light in different directions.

[0057] This polygonal microcavity chaotic laser has a simple manufacturing process, requires no secondary epitaxy, no complex active or passive integration technology, and no hybrid integration technology. It is low in cost and has important application value in on-chip random number generation and optical information processing.

[0058] refer to Figure 3A The diagram shows a planar structure of a microcavity chaotic laser with an arc-edge regular polygon. 'a' represents the side length of the original regular polygon (the regular polygon inscribed within the arc-edge regular polygon), 'd' is the waveguide width, 'δ' is the arc-edge deformation (i.e., the furthest distance between the arc-edge and the adjacent square side), 'r' is the arc-edge radius, 'Rin' is the aperture inner diameter, 'h' is the waveguide translation distance, and 'w' is the width of the annular electrode window. When the cross-section of the semiconductor microcavity is an arc-edge regular polygon, the dimensions of the arc-edge regular polygon satisfy the following relationship:

[0059]

[0060] In this embodiment, to improve the chaotic light power, the size of the polygonal microcavity chaotic laser can be increased during the laser fabrication process to enhance the output chaotic laser power. By adjusting the shape and size of the aperture in the polygonal microcavity chaotic laser, suppression of different higher-order transverse modes can be achieved. Furthermore, by adjusting the connection position between waveguide 3 and whispering cavity 1, the coupling output efficiency can be optimized.

[0061] Figure 4A and 4B The diagrams schematically illustrate the fundamental and first-order mode field distributions of a two-port microcavity chaotic laser with a side length a = 20 μm, a deformation δ = 2.17 μm, a waveguide width d = 2 μm, an aperture inner diameter Rin = 6.5 μm, and a waveguide translation distance h = 4√2 μm, obtained using finite element numerical calculations according to an embodiment of this disclosure. The simulated fundamental mode has a wavelength of 1550.119 nm, and the mode field is mainly distributed in... Figure 4A The white single-ring region shown has a first-order mode wavelength of 1550.092 nm, and the mode field is mainly distributed in... Figure 4B The white double-ring region shown has a 3.4 GHz frequency interval between the simulated fundamental mode and the first-order mode, which is conducive to the generation of chaotic nonlinearity.

[0062] The waveguide and whispering cavity in the dual-port microcavity chaotic laser of this embodiment can be made of the same material and using the same process, or they can be made of different materials. The active region of the whispering cavity has a quantum well structure or a quantum dot structure, and injecting current into it can provide optical gain.

[0063] In one example, a dual-port microcavity laser was designed based on an AlGaInAs / InP compressive strained multi-quantum-well epitaxial wafer. The whispering-gallery cavity is a 20 μm side-length, 2.17 μm deformable arc-edged quadrilateral cavity with a waveguide width of 2 μm. The aperture is a 6.5 μm inner diameter circular aperture located within the arc-edged quadrilateral cavity and can be fabricated using standard semiconductor photolithography and etching processes, or other processes. The waveguide and the arc-edged quadrilateral cavity are made of the same material and using the same process, and the light output directions of the upper and lower waveguides are the same. In this example, the waveguide output surface uses a natural cleavage surface, but end-face coating is not excluded. To achieve non-uniform current injection, an annular ohmic contact window structure was designed on top of the arc-edged quadrilateral cavity, with an annular window width of 4 μm.

[0064] Performance tests were conducted using the dual-port microcavity chaotic laser shown in this example.

[0065] Figure 5The power-current curves of the P1 and P2 ports of a dual-port microcavity chaotic laser according to an embodiment of this disclosure are shown respectively, measured at a current of 29mA. The dashed line corresponds to the P1 port, and the solid line corresponds to the P2 port. It can be seen that as the current increases, the power of the two ports alternately remains at a higher level, proving that under the same current, the two ports can collect light of different properties.

[0066] Figure 6A and 6B The chaotic signal spectra of the P1 port and P2 port of a dual-port microcavity chaotic laser according to an embodiment of the present disclosure are given respectively under a current of 29mA. It can be seen from the spectra that the spectrum is broadened near 1557nm, which is a broadened chaotic spectrum.

[0067] Figure 7A and 7B The chaotic signal spectra of ports P1 and P2 of a dual-port microcavity chaotic laser according to an embodiment of this disclosure are shown respectively, measured at a current of 29mA. The curves connected to the gray areas represent the noise floor of the spectrum analyzer, while the black curves represent the signal curves. Careful comparison is needed. Figure 7A and Figure 7B It can be observed that the chaotic spectrum of port P1 has a gentle envelope peak shape near 3 GHz and 12 GHz, while the spectrum of port P2 has more continuous fluctuations. The calculated bandwidths of the chaotic signals of ports P1 and P2 are 11.8 GHz and 11.2 GHz, respectively.

[0068] Figure 8A and 8B Autocorrelation function curves of the chaotic timing signals of ports P1 and P2 of a dual-port microcavity chaotic laser according to an embodiment of this disclosure, measured at a current of 29 mA, are presented respectively. Figure 8B Compared to the autocorrelation curve where there is only a weak oscillation peak at the zero-delay position, Figure 8A There are two correlated oscillation peaks at zero delay, which is consistent with... Figure 7A The spectrum provides more detailed spectral information. Comparative experiments show that the two ports of the dual-port microcavity laser can simultaneously achieve chaotic output, but the chaotic characteristics are deviated.

[0069] In summary, this disclosure provides a multi-port microcavity chaotic laser. By designing a suitable whispering-gallery microcavity and arranging multiple output waveguides, it simultaneously achieves the output of multiple chaotic signals. This multi-port whispering-gallery cavity semiconductor spontaneously generated chaotic laser, which requires no external optical feedback and utilizes both external optical injection and photoelectric feedback, features simple fabrication, high reliability, and low mass production cost. It is beneficial for on-chip integration of post-processing in random number applications, as well as high-speed parallel random number generation. It also provides diverse chaotic sources for applications such as on-chip optical computing.

[0070] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0071] Although this disclosure has been shown and described with reference to specific exemplary embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made to this disclosure without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Therefore, the scope of this disclosure should not be limited to the above embodiments, but should be defined not only by the appended claims, but also by their equivalents.

Claims

1. A multi-port microcavity chaotic laser, characterized in that, include: N sound-gallery cavities (1) are arranged sequentially along a diagonal, and two adjacent sound-gallery cavities (1) are coupled together. The cross-section of the sound-gallery cavities (1) is an arc-sided polygon. The adjacent vertices of the arc-sided polygon are connected to each other to form a regular polygon, and the sides are arc sides with the same curvature, which are used to form total internal reflection of light. N≥2. Ohmic contact window (2), in which metal is deposited to form a P-electrode layer (107), located at the upper end of the N whispering cavities (1), for non-uniform current injection to realize nonlinear interaction of modes to generate chaotic laser; M waveguides (3) are connected to the outer wall of at least one of the N whispering cavities (1) and are parallel to one of the diagonals of the whispering cavities (1), forming a symmetrical structure together with the N whispering cavities (1) for directional output of chaotic laser, where M is a multiple of 1 or 2.

2. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The center distance between two adjacent whispering galvanic cavities (1) is associated with the number of chaotic laser modes.

3. The multi-port microcavity chaotic laser according to claim 1, characterized in that, A groove is formed at the intersection of two adjacent sounding wall cavities (1) to control the number of chaotic laser modes.

4. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The curvature of the curved edge polygon is: Where a is the side length of the regular polygon formed by the vertices of the arc-edge polygon, r is the radius of the arc edge of the arc-edge polygon, and δ is the amount of arc edge deformation.

5. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The echo-gallery cavity (1) and the waveguide (3) have the same structure, and from bottom to top, they include: The first confinement layer (103) is used to confine the optical field of the chaotic laser; The active region layer (104) is used to provide the gain medium for chaotic lasers; The second confinement layer (105) is used to confine the optical field of the chaotic laser; Ohmic contact layer (106) is used to reduce contact resistance.

6. The multi-port microcavity chaotic laser according to claim 5, characterized in that, Also includes: An N-type substrate (102) is disposed at the bottom of the first confinement layer (103) to support the multi-port microcavity chaotic laser; An N-electrode layer (101) is disposed below the N-type substrate (102) and is used in conjunction with the P-electrode layer (107) to realize current injection of the multi-port microcavity chaotic laser.

7. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The sounding wall cavity (1) is an active cavity, and its material structure is a quantum well or a quantum dot structure.

8. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The echo chamber (1) is a square, hexagonal, octagonal, arc-sided quadrilateral, arc-sided hexagonal, or arc-sided octagonal structure.

9. The multi-port microcavity chaotic laser according to claim 1, characterized in that, The light outlet of the waveguide (3) is a cleaved surface or an end face coated structure.

10. A method for controlling a multi-port microcavity chaotic laser, applied to the multi-port microcavity chaotic laser as described in any one of claims 1-9, characterized in that, include: The output power of the chaotic laser is adjusted by setting the number of whispering cavities (1). The more whispering cavities (1) there are, the higher the laser output power. Adjust the center distance between adjacent whispering cavities (1) to regulate the number of chaotic laser modes generated by the multi-port microcavity chaotic laser.