Vertically stacked LED chip structure and manufacturing method thereof

Abstract

The invention provides a vertically stacked LED chip structure and a manufacturing method thereof. The vertically stacked LED chip structure comprises a substrate, a first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only comprises the first epitaxial light-emitting structure, a third epitaxial light emitting structure; the third epitaxial light-emitting structure internally comprises a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially stacked on the substrate along a direction far away from the substrate; the first reflecting mirror layer is formed between the substrate and the color conversion layer and used for reflecting light emitted by the third epitaxial light-emitting structure to the light-emitting face of the vertically-stacked LED chip structure, and the problem that vertically-stacked LED chips are low in light-emitting rate is solved through the technical scheme.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a vertically stacked LED chip structure and a manufacturing method thereof. Background Art

[0002] At present, in consideration of chip size reduction and integration technology, a vertically stacked LED chip structure has been developed, which can realize two or three basic colors in one LED chip structure and can independently process a single LED pixel, so that the LED chip structure can selectively emit light of multiple colors. However, due to the connection of wiring or driving circuits, the display effect of the vertically stacked LED chip structure, especially the LED pixels at the bottom layer, is not ideal and the light output efficiency is low.

[0003] Therefore, how to fully stimulate the bottom layer of LED pixels in the vertical LED chip structure and improve the light extraction efficiency of the vertical LED chip structure has become a major problem that technicians in this field need to solve. Summary of the invention

[0004] The present invention provides a vertically stacked LED chip structure and a manufacturing method thereof, so as to solve the problem of low light extraction efficiency of vertically stacked LED chips.

[0005] According to a first aspect of the present invention, there is provided a vertically stacked LED chip structure, comprising:

[0006] substrate;

[0007] A first epitaxial light emitting structure and a second epitaxial light emitting structure, or only the first epitaxial light emitting structure;

[0008] A third epitaxial light-emitting structure; the third epitaxial light-emitting structure includes a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially stacked on the substrate in a direction away from the substrate;

[0009] The first reflector layer is formed between the substrate and the color conversion layer, and is used to reflect the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip structure.

[0010] Optionally, the first reflector layer is a DBR reflector or a metal reflector.

[0011] Optionally, the third epitaxial light-emitting structure further includes:

[0012] A third epitaxial light-emitting structure stack, a second reflector layer and a first bonding layer; the color conversion layer, the third epitaxial light-emitting structure stack, the second reflector layer and the first bonding layer are sequentially stacked on the substrate in a direction away from the substrate;

[0013] The second reflector layer and the first bonding layer are used to transmit light emitted by the third epitaxial light-emitting structure.

[0014] Optionally, the third epitaxial light-emitting structure stack includes:

[0015] A first N-type GaN layer, a blue light-emitting layer, a first P-type GaN layer, a first current spreading layer and a first passivation layer are sequentially stacked in a direction away from the substrate; wherein the first N-type GaN layer includes a first step structure;

[0016] a first N-electrode and a first P-electrode;

[0017] Among them, the first N electrode is formed on the first step structure; the first bonding layer and the second reflector layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; the first passivation layer covers the first step structure, and covers the blue light-emitting layer, the first P-type GaN layer, the side walls of the first current spreading layer and the second reflector layer, and the surface and side walls of the first bonding layer.

[0018] Optionally, when the vertically stacked LED chip structure includes only the first epitaxial light-emitting structure and the third epitaxial light-emitting structure, the first epitaxial light-emitting structure is formed on the first bonding layer;

[0019] The second reflector layer is also used to reflect the light emitted by the first epitaxial light-emitting structure.

[0020] Optionally, the color conversion layer is a red color conversion layer or a green color conversion layer.

[0021] Optionally, when the vertically stacked LED chip structure includes the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, the vertically stacked LED chip structure further includes:

[0022] A third reflector layer and a second bonding layer; the third reflector layer and the second bonding layer are sequentially formed on the second epitaxial light-emitting structure in a direction away from the substrate;

[0023] wherein the first epitaxial light-emitting structure is formed on the second bonding layer; the second epitaxial light-emitting structure is formed on the first bonding layer; wherein the third reflector layer and the second bonding layer are used to transmit light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure and reflect light emitted by the first epitaxial light-emitting structure; the second reflector layer is also used to reflect light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

[0024] Optionally, the second reflector layer and the third reflector layer are both DBR reflectors.

[0025] Optionally, the color conversion layer is a red color conversion layer.

[0026] According to a second aspect of the present invention, a method for manufacturing a vertically stacked LED chip structure is provided, which is used to manufacture the vertically stacked LED chip structure according to any one of the first aspects of the present invention, comprising:

[0027] Providing a substrate as described above;

[0028] forming the first reflector layer, wherein the first reflector layer is formed on the surface of the substrate;

[0029] forming the third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises the color conversion layer; wherein the color conversion layer is formed on the surface of the first reflector layer;

[0030] The second epitaxial light emitting structure and the first epitaxial light emitting structure are sequentially formed on the third epitaxial light emitting structure in a direction away from the substrate, or only the first epitaxial light emitting structure is formed.

[0031] Optionally, the first reflector layer is formed by sputtering or evaporation.

[0032] Optionally, forming the third epitaxial light-emitting structure specifically includes:

[0033] The color conversion layer, the third epitaxial light emitting structure stack, the second reflector layer and the first bonding layer are sequentially formed on the first reflector layer in a direction away from the substrate.

[0034] Optionally, forming the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate specifically includes:

[0035] Providing a first growth substrate; forming the first epitaxial light-emitting structure on the first growth substrate;

[0036] Providing a first temporary substrate with a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate is formed on the first temporary substrate;

[0037] The first growth substrate is peeled off, a surface of the first epitaxial light-emitting structure facing away from the first temporary substrate is bonded to the first bonding layer, and the first temporary substrate is removed; so as to form the first epitaxial light-emitting structure on the third epitaxial light-emitting structure.

[0038] Optionally, sequentially forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate specifically includes:

[0039] Providing a second growth substrate; forming the second epitaxial light-emitting structure on the second growth substrate;

[0040] Providing a second temporary substrate with a bonding layer on its surface; and transferring the second epitaxial light-emitting structure to the second temporary substrate; wherein a side of the second epitaxial light-emitting structure facing away from the second growth substrate is formed on the second temporary substrate;

[0041] Peeling off the second growth substrate, bonding the second epitaxial light-emitting structure to the first bonding layer at a side facing away from the second temporary substrate, and removing the second temporary substrate;

[0042] Providing a first growth substrate; forming the first epitaxial light-emitting structure on the first growth substrate;

[0043] Providing a first temporary substrate with a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate is formed on the first temporary substrate;

[0044] The first growth substrate is peeled off, a side of the first epitaxial light-emitting structure facing away from the first temporary substrate is bonded to the second epitaxial light-emitting structure, and the first temporary substrate is removed; so as to sequentially form the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure.

[0045] Optionally, after bonding the second epitaxial light-emitting structure at a side facing away from the second temporary substrate to the first bonding layer and removing the second temporary substrate, the method further includes:

[0046] The third reflector layer and the second bonding layer are formed; the third reflector layer and the second bonding layer are sequentially formed between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is bonded to the third reflector layer through the second bonding layer.

[0047] Optionally, the color conversion layer is formed by immersion or spin coating.

[0048] Optionally, forming the third epitaxial light-emitting structure stack specifically includes:

[0049] The first N-type GaN layer, the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer and the first passivation layer are sequentially formed on the color conversion layer in a direction away from the substrate; wherein the first N-type GaN layer has the first step structure;

[0050] forming the first N electrode and the first P electrode;

[0051] Among them, the first N electrode is formed on the first step structure; the second reflector layer and the first bonding layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; the first passivation layer covers the first step structure, and covers the blue light-emitting layer, the first P-type GaN layer, the side walls of the first current spreading layer and the second reflector layer, and the surface and side walls of the first bonding layer.

[0052] According to a third aspect of the present invention, there is provided an electronic device comprising the vertically stacked LED chip structure as described in any one of the first aspects of the present invention.

[0053] According to a fourth aspect of the present invention, a method for manufacturing an electronic device is provided, characterized by comprising a method for manufacturing a vertically stacked LED chip structure according to any one of the second aspects of the present invention.

[0054] The present invention proposes a vertically stacked LED chip structure, which achieves the effect of color conversion of the third epitaxial light-emitting structure by setting a color conversion layer in the third epitaxial light-emitting structure, and further enables the vertically stacked LED chip to selectively emit light of multiple colors; at the same time, by setting a first reflector layer between the substrate and the color conversion layer, the light emitted by the third epitaxial light-emitting structure is reflected to the light-emitting surface of the vertically stacked LED chip, thereby improving the light extraction efficiency of the vertically stacked LED chip structure. It can be seen that the technical solution provided by the present invention solves the problem of low light extraction rate of vertically stacked LED chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0056] Figure 1 It is a schematic flow chart of a method for manufacturing a vertically stacked LED chip structure provided by one embodiment of the present invention;

[0057] Figure 2 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the first specific embodiment of the present invention Figure 1 ;

[0058] Figure 3 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the first specific embodiment of the present invention Figure 2 ;

[0059] Figure 4 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the first specific embodiment of the present invention Figure 3 ;

[0060] Figure 5 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the first specific embodiment of the present invention Figure 4 ;

[0061] Figure 6 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the first specific embodiment of the present invention Figure 5 ;

[0062] Figure 7 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the second specific embodiment of the present invention Figure 1 ;

[0063] Figure 8 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the second specific embodiment of the present invention Figure 2 ;

[0064] Fig. 9Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the second specific embodiment of the present invention Figure 3 ;

[0065] Fig.10 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the second specific embodiment of the present invention Figure 4 ;

[0066] Fig.11 Schematic diagram of the device structure at different process stages of the method for manufacturing a vertically stacked LED chip structure provided by the second specific embodiment of the present invention Figure 5 .

[0067] Description of reference numerals:

[0068] 1- substrate;

[0069] 2- first reflector layer;

[0070] 3-color conversion layer;

[0071] 4-first N-type GaN layer;

[0072] 5- blue light emitting layer;

[0073] 6-first P-type GaN layer;

[0074] 7- first current spreading layer;

[0075] 8- second reflector layer;

[0076] 9- first adhesive layer;

[0077] 10- first passivation layer;

[0078] 11- a first N electrode;

[0079] 12- first P electrode;

[0080] 13- a second N-type GaN layer;

[0081] 14- a first light-emitting layer;

[0082] 15- a second P-type GaN layer;

[0083] 16- second current spreading layer;

[0084] 17- second passivation layer;

[0085] 18- a second P electrode;

[0086] 19- a second N electrode;

[0087] 20-a first temporary substrate;

[0088] 21- a first growth substrate;

[0089] 22- a third N-type GaN layer;

[0090] 23- second light-emitting layer;

[0091] 24- a third P-type GaN layer;

[0092] 25-third current spreading layer;

[0093] 26- third reflector layer;

[0094] 27- second adhesive layer;

[0095] 28- a third passivation layer;

[0096] 29- a third N electrode;

[0097] 30- third P electrode;

[0098] 31- a second temporary substrate;

[0099] 32-Second growth substrate. DETAILED DESCRIPTION

[0100] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0101] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0102] At present, in consideration of chip size reduction and integration technology, a vertically stacked LED chip structure has been developed, which can realize two or three basic colors in one LED chip structure and can independently process a single LED pixel, so that the LED chip structure can selectively emit light of multiple colors. However, due to the connection of wiring or driving circuits, the vertically stacked LED chip structure has poor light output effect, especially the LED pixels at the bottom of the LED chip have low light output efficiency.

[0103] In view of this, the inventor of the present application proposes: by setting a color conversion layer on the bottom-level LED pixels, the effect of color conversion of the bottom-level LED pixels can be achieved, and then introducing a first reflector layer so that the color conversion layer is formed on the first reflector layer, so that the first reflector layer can be used to reflect the light emitted by the bottom-level LED pixels to the light-emitting surface of the vertically stacked LED chips, thereby improving the light-emitting efficiency of the bottom-level LED pixels, and further, enabling the vertically stacked LED chips to achieve better light-emitting effects.

[0104] It can be seen that the technical solution provided by the present invention can solve the problem of low light output efficiency of LED pixels at the bottom layer of LED chips in vertically stacked LED chips.

[0105] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0106] Please refer to Figure 1-Figure 11 According to one embodiment of the present invention, there is provided a vertically stacked LED chip structure, comprising:

[0107] Substrate 1;

[0108] A first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only the first epitaxial light-emitting structure (the naming of the epitaxial light-emitting structure in the first epitaxial light-emitting structure and the second epitaxial light-emitting structure, and only the first epitaxial light-emitting structure, is only for the convenience of description, and the specific meaning can refer to the description of the two specific embodiments later in the specification of the present invention.);

[0109] A third epitaxial light-emitting structure; the third epitaxial light-emitting structure includes a color conversion layer 3; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially stacked on the substrate 1 in a direction away from the substrate 1;

[0110] The first reflector layer 2 is formed between the substrate 1 and the color conversion layer 3 and is used to reflect the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip structure.

[0111] Among them, the light-emitting surface of the vertically stacked LED chip refers to the side of the first epitaxial light-emitting structure that is away from the substrate; the first reflector layer is arranged between the third epitaxial light-emitting structure and the substrate, and is used to reflect the light beam in the vertically stacked LED chip to the light-emitting surface of the vertically stacked LED chip, so as to improve the light-emitting efficiency of the vertically stacked LED chip.

[0112] In a preferred embodiment, the first reflector layer is used to totally reflect the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip structure.

[0113] In another embodiment, the first reflector layer may also be used to reflect at least part of the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip structure.

[0114] The present invention proposes a vertically stacked LED chip structure, which realizes the effect of the third epitaxial light-emitting structure emitting a light beam of corresponding color by setting a color conversion layer in the third epitaxial light-emitting structure, and introduces a first reflector layer between the substrate and the color conversion layer, so that the first reflector layer can reflect the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip.

[0115] It can be seen that the technical solution provided by the present invention, on the one hand, achieves the effect of the third epitaxial light-emitting structure emitting a light beam of corresponding color through color conversion; on the other hand, by setting a first reflector layer on the opposite side of the light-emitting surface of the vertically stacked LED chips, the light-emitting efficiency of the third epitaxial light-emitting structure is improved, thereby achieving a better light-emitting effect and also improving the light-emitting efficiency of the vertically stacked LED chips.

[0116] In addition, by sequentially forming a second epitaxial light-emitting structure and a first epitaxial light-emitting structure on a third epitaxial light-emitting structure, or forming only the first epitaxial light-emitting structure, a three-layer stacked or two-layer stacked vertical LED chip structure can be formed, so that the vertically stacked LED chips can selectively emit light in two or three colors.

[0117] In one embodiment, the color conversion layer 3 has a thickness of 1 um-4 um.

[0118] In one embodiment, the first reflector layer 2 is a DBR reflector or a metal reflector.

[0119] In one embodiment, the third epitaxial light-emitting structure further includes:

[0120] A third epitaxial light-emitting structure stack, a second reflector layer 8 and a first bonding layer 9; the color conversion layer 3, the third epitaxial light-emitting structure stack, the second reflector layer 8 and the first bonding layer 9 are sequentially stacked on the substrate 1 in a direction away from the substrate 1;

[0121] The second reflector layer 8 and the first bonding layer 9 are used to transmit the light emitted by the third epitaxial light-emitting structure.

[0122] In a preferred embodiment, the second reflector layer 8 and the first bonding layer 9 fully transmit the light emitted by the third epitaxial light-emitting structure.

[0123] In other embodiments, the second reflector layer 8 and the first bonding layer 9 at least partially transmit the light emitted by the third epitaxial light-emitting structure.

[0124] In a specific embodiment, the third epitaxial light-emitting structure stack includes:

[0125] A first N-type GaN layer 4, a blue light-emitting layer 5, a first P-type GaN layer 6, a first current spreading layer 7 and a first passivation layer 10 are sequentially stacked in a direction away from the substrate 1; wherein the first N-type GaN layer 4 includes a first step structure;

[0126] A first N-electrode 11 and a first P-electrode 12;

[0127] The first N electrode 11 is formed on the first step structure; the first bonding layer 9 and the second reflector layer 8 are formed on part of the first current spreading layer 7 to form a second step structure; the first P electrode 12 is formed on the second step structure; the first passivation layer 10 covers the first step structure, and covers the side walls of the blue light emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the second reflector layer 8, and the surface and side walls of the first bonding layer 9, as shown in FIG. Figure 2 shown.

[0128] The vertically stacked LED chip structure proposed in the present invention has the following two specific embodiments:

[0129] In a first specific embodiment, when the vertically stacked LED chip structure includes only the first epitaxial light-emitting structure and the third epitaxial light-emitting structure, the first epitaxial light-emitting structure is formed on the first bonding layer 9;

[0130] The second reflector layer 8 is also used to reflect the light emitted by the first epitaxial light-emitting structure.

[0131] In a preferred embodiment, the second reflector layer 8 totally reflects the light emitted by the first epitaxial light-emitting structure.

[0132] In one embodiment, the first epitaxial light-emitting structure includes:

[0133] A second N-type GaN layer 13, a first light-emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16 and a second passivation layer 17 are sequentially stacked in a direction away from the substrate 1; wherein the second N-type GaN layer 13 includes a third step structure;

[0134] a second N electrode 19 and a second P electrode 18;

[0135] Among them, the second N electrode 19 is formed on the third step structure; the second P electrode 18 is formed on a portion of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the first light-emitting layer 14, the side walls of the second P-type GaN layer 15 and the surface and side walls of the second current spreading layer 16.

[0136] In one embodiment, the first N electrode 11 and the second N electrode 19 constitute an N-type electrode of a vertically stacked LED chip; the first P electrode 12 and the second P electrode 18 constitute a P-type electrode of a vertically stacked LED chip; the vertically stacked LED chip structure is as follows Figure 5 shown.

[0137] In another embodiment, the first N electrode 11 and the second N electrode 19 are interconnected to form the N electrode of the vertically stacked LED chip structure. Figure 6 shown.

[0138] In a specific embodiment, the color conversion layer 3 is a red color conversion layer or a green color conversion layer; the first light-emitting layer 14 is a blue light-emitting layer or a green light-emitting layer; then the second reflector layer 8 is used to transmit red light and reflect blue light or green light; or to transmit green light and reflect blue light.

[0139] In one embodiment, the first epitaxial light emitting structure and the third epitaxial light emitting structure are respectively: a blue epitaxial light emitting structure and a red epitaxial light emitting structure;

[0140] In another embodiment, the first epitaxial light emitting structure and the third epitaxial light emitting structure are respectively: a blue epitaxial light emitting structure and a green epitaxial light emitting structure;

[0141] In other implementations, the first epitaxial light-emitting structure and the third epitaxial light-emitting structure are respectively: a green epitaxial light-emitting structure and a red epitaxial light-emitting structure.

[0142] The present invention provides a structure in which two light-emitting structures are vertically stacked. On the one hand, the third epitaxial light-emitting structure emits a light beam of corresponding color by color conversion. On the other hand, the light-emitting efficiency of the third epitaxial light-emitting structure is improved by arranging a first reflector layer on the opposite side of the light-emitting surface of the vertically stacked LED chips, thereby achieving a better light-emitting effect and also improving the light-emitting efficiency of the LED chips with two layers of light-emitting structures vertically stacked.

[0143] In addition, the solution provided in this specific embodiment can achieve the effect of covering two basic colors in a vertically stacked LED chip by forming a first epitaxial light-emitting structure on a third epitaxial light-emitting structure, thereby achieving higher resolution and selective light emission effects.

[0144] In a second specific embodiment, when the vertically stacked LED chip structure includes the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, the vertically stacked LED chip structure further includes:

[0145] A third reflector layer 26 and a second bonding layer 27; the third reflector layer 26 and the second bonding layer 27 are sequentially formed on the second epitaxial light-emitting structure in a direction away from the substrate 1;

[0146] Wherein, the first epitaxial light-emitting structure is formed on the second bonding layer 27; the second epitaxial light-emitting structure is formed on the first bonding layer 9; wherein the third reflector layer 26 and the second bonding layer 27 are used to transmit the light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure and reflect the light emitted by the first epitaxial light-emitting structure; the second reflector layer 8 is also used to reflect the light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

[0147] In a preferred embodiment, the third reflector layer 26 and the second bonding layer 27 fully transmit the light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure; the third reflector layer 26 fully reflects the light emitted by the first epitaxial light-emitting structure; and the second reflector layer 8 fully reflects the light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

[0148] In one embodiment, the first bonding layer 9 and the second bonding layer 27 are respectively bonded to the second reflector layer 8 and the third reflector layer 26 by wafer bonding technology.

[0149] In one embodiment, the second reflector layer 8 and the third reflector layer 26 are both DBR reflectors.

[0150] In one embodiment, the first adhesive layer 9 and the second adhesive layer 27 are both transparent glue layers.

[0151] In a specific embodiment, the second epitaxial light-emitting structure includes:

[0152] A third N-type GaN layer 22, a second light-emitting layer 23, a third P-type GaN layer 24, a third current spreading layer 25 and a third passivation layer 28 are sequentially stacked in a direction away from the substrate 1; wherein the third N-type GaN layer 22 includes a fourth step structure;

[0153] A third N electrode 29 and a third P electrode 30;

[0154] Among them, the third N electrode 29 is formed on the fourth step structure; the second bonding layer 27 and the third reflector layer 26 are formed on part of the third current spreading layer 25 to form a fifth step structure; the third P electrode 30 is formed on the fifth step structure; the third passivation layer 28 covers the fourth step structure, and covers the second light-emitting layer 23, the third P-type GaN layer 24, the side walls of the third current spreading layer 25 and the third reflector layer 26, and the surface and side walls of the second bonding layer 27.

[0155] In another specific embodiment, the first epitaxial light-emitting structure includes:

[0156] A second N-type GaN layer 13, a first light-emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16 and a second passivation layer 17 are sequentially stacked in a direction away from the substrate 1; wherein the second N-type GaN layer 13 includes a third step structure;

[0157] a second N electrode 19 and a second P electrode 18;

[0158] Among them, the second N electrode 19 is formed on the third step structure; the second P electrode 18 is formed on a portion of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the first light-emitting layer 14, the side walls of the second P-type GaN layer 15 and the surface and side walls of the second current spreading layer 16.

[0159] In one embodiment, the first N electrode 11, the second N electrode 19 and the third N electrode 29 constitute the N-type electrode of the vertically stacked LED chip; the first P electrode 12, the second P electrode 18 and the third P electrode 30 constitute the P-type electrode of the vertically stacked LED chip; the vertically stacked LED chip structure is as follows Fig.10 shown.

[0160] In another embodiment, the first N electrode 11, the second N electrode 19 and the third N electrode 29 are interconnected to form the N electrode of the vertically stacked LED chip structure. Fig.11 shown.

[0161] In a specific embodiment, the color conversion layer 3 is a red color conversion layer; the first light-emitting layer 14 is a blue light-emitting layer; the second light-emitting layer 23 is a green light-emitting layer; the second reflector layer 8 is used to transmit red light, and also to reflect blue light and green light; the third reflector layer 26 is used to transmit red light and green light, and also to reflect blue light.

[0162] In one embodiment, the first epitaxial light-emitting structure, the second epitaxial light-emitting structure and the third epitaxial light-emitting structure are respectively a blue epitaxial light-emitting structure, a green epitaxial light-emitting structure and a red epitaxial light-emitting structure.

[0163] The specific embodiment provides a vertically stacked structure of three light-emitting structures. On the one hand, through color conversion, the effect of the third epitaxial light-emitting structure emitting a light beam of corresponding color is achieved. On the other hand, by setting a first reflector layer on the opposite side of the light-emitting surface of the vertically stacked LED chip, the light-emitting efficiency of the third epitaxial light-emitting structure is improved, thereby achieving a better light-emitting effect and also improving the light-emitting efficiency of the LED chip with three-layer light-emitting structures vertically stacked.

[0164] In addition, the solution provided in this embodiment can achieve the effect of covering full colors in a vertically stacked LED chip by sequentially forming a second epitaxial light-emitting structure and a first epitaxial light-emitting structure on a third epitaxial light-emitting structure, so that the vertically stacked LED chips can selectively emit light of multiple colors.

[0165] Secondly, according to an embodiment of the present invention, a method for manufacturing a vertically stacked LED chip structure is also provided, which is used to manufacture the vertically stacked LED chip structure described in any of the aforementioned embodiments of the present invention. The flowchart of the method for manufacturing a vertically stacked LED chip structure is as follows: Figure 1 As shown; the production method comprises:

[0166] S1: providing a substrate 1;

[0167] S2: forming the first reflector layer 2, wherein the first reflector layer 2 is formed on the surface of the substrate 1;

[0168] S3: forming the third epitaxial light-emitting structure; the third epitaxial light-emitting structure includes the color conversion layer 3; wherein the color conversion layer 3 is formed on the surface of the first reflector layer 2;

[0169] S4: sequentially forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate 1, or only forming the first epitaxial light-emitting structure; respectively as follows Figure 5 or as shown in 10, or as Figure 6 Or as shown in 11.

[0170] The present invention provides a method for manufacturing a vertically stacked LED chip structure, which achieves the effect of color conversion of the third epitaxial light-emitting structure by forming a color conversion layer in the third epitaxial light-emitting structure, and forms a first reflector layer for reflecting the light emitted by the third epitaxial light-emitting structure, thereby improving the light extraction efficiency of the third epitaxial light-emitting structure. Further, the vertically stacked LED chip structure can present a better light extraction effect.

[0171] In one embodiment, in step S2, the first reflector layer 2 is formed by sputtering or evaporation.

[0172] In a specific embodiment, in step S3, forming the third epitaxial light-emitting structure specifically includes:

[0173] Step S31 : forming the color conversion layer 3 , the third epitaxial light-emitting structure stack, the second reflector layer 8 and the first bonding layer 9 in sequence on the first reflector layer 2 in a direction away from the substrate 1 .

[0174] In one embodiment, in step S31, the color conversion layer 3 is formed by immersion or spin coating.

[0175] In one embodiment, in step S31, forming the third epitaxial light-emitting structure stack specifically includes: step S311-step S312:

[0176] Step S311: forming the first N-type GaN layer 4, the blue light-emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the first passivation layer 10 in sequence on the color conversion layer 3 in a direction away from the substrate 1; wherein the first N-type GaN layer 4 has a first step structure;

[0177] Step S312: forming the first N electrode 11 and the first P electrode 12;

[0178] The first N electrode 11 is formed on the first step structure; the second reflector layer 8 and the first bonding layer 9 are formed on part of the first current spreading layer 7 to form a second step structure; the first P electrode 12 is formed on the second step structure; the first passivation layer 10 covers the first step structure, and covers the side walls of the blue light emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the second reflector layer 8, and the surface and side walls of the first bonding layer 9, as shown in FIG. Figure 2 shown.

[0179] In one embodiment, in step S312, forming the first N electrode 11 and the first P electrode 12 specifically includes:

[0180] S3121: etching a portion of the first passivation layer 10 on the surface of the first step structure to form a first N-electrode cavity; and etching a portion of the first passivation layer 10 on the surface of the second step structure to form a first P-electrode cavity;

[0181] S3122: depositing a metal material in the first N-electrode cavity and the first P-electrode cavity to form the first N-electrode 11 in the first N-electrode cavity; and forming the first P-electrode 12 in the first P-electrode cavity.

[0182] The method for manufacturing the vertically stacked LED chip structure proposed in the present invention corresponds to the following two specific embodiments:

[0183] In a first specific embodiment, in step S4, forming the first epitaxial light-emitting structure on the third epitaxial light-emitting structure specifically includes: step S41-step S43:

[0184] Step S41: providing a first growth substrate 21; forming the first epitaxial light-emitting structure on the first growth substrate 21;

[0185] Step S42: providing a first temporary substrate 20 with a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate 20; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate 21 is formed on the first temporary substrate 20;

[0186] Step S43: peel off the first growth substrate 21, bond the first epitaxial light-emitting structure to the first bonding layer 9 on the side facing away from the first temporary substrate 20, and remove the first temporary substrate 20; so as to form the first epitaxial light-emitting structure on the third epitaxial light-emitting structure, as shown in FIG. Figure 4 shown.

[0187] In one embodiment, in step S43, before bonding the surface of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 to the first bonding layer 9, the step further includes:

[0188] Etching the first passivation layer 10 on the surface of the first bonding layer 9 to form a first cavity; wherein the size of the first cavity is adapted to the size of the first epitaxial light-emitting structure;

[0189] The first epitaxial light-emitting structure has a surface facing away from the first temporary substrate 20 bonded to the first bonding layer 9 in the first cavity.

[0190] In a specific embodiment, in step S41, forming the first epitaxial light-emitting structure on the first growth substrate 21 specifically includes: step S411-step S42:

[0191] Step S411: forming the second N-type GaN layer 13, the first light-emitting layer 14, the second P-type GaN layer 15, the second current spreading layer 16 and the second passivation layer 17 in sequence in a direction away from the first growth substrate 21; wherein the second N-type GaN layer 13 includes the third stepped structure;

[0192] Step S412: forming the second N electrode 19 and the second P electrode 18;

[0193] The second N-electrode 19 is formed on the third step structure; the second P-electrode 18 is formed on a portion of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the first light-emitting layer 14, the sidewalls of the second P-type GaN layer 15, and the surface and sidewalls of the second current spreading layer 16, such as Figure 3 shown.

[0194] In one embodiment, in step S412, forming the second N-electrode 19 and the second P-electrode 18 specifically includes:

[0195] S4121: etching a portion of the second passivation layer 17 on the surface of the third step structure to form a second N-electrode cavity; and etching a portion of the second passivation layer 17 on the top of the second current spreading layer 16 to form a second P-electrode cavity;

[0196] S4122: depositing a metal material in the second N-electrode cavity and the second P-electrode cavity to form the second N-electrode 19 in the second N-electrode cavity; and forming the second P-electrode 18 in the second P-electrode cavity;

[0197] The first N electrode 11 and the second N electrode 19 constitute the N electrode of the vertically stacked LED chip structure; the first P electrode 12 and the second P electrode 18 constitute the P electrode of the vertically stacked LED chip structure.

[0198] In one embodiment, in step S412, after forming the second N-electrode 19 and the second P-electrode 18, the step further includes:

[0199] The first N-electrode 11 and the second N-electrode 19 are interconnected to form the N-electrode of the vertically stacked LED chip structure. Figure 6 shown.

[0200] The technical solution proposed in this embodiment of the present invention forms a third epitaxial light-emitting structure and a first epitaxial light-emitting structure stacked in sequence on a substrate, so that a vertically stacked LED chip structure can cover two basic colors, thereby achieving a selective light output effect, and the introduction of the first reflector achieves a higher light output rate.

[0201] In a second specific embodiment, in step S4, sequentially forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate 1 specifically includes: steps S41-S46:

[0202] S41: providing a second growth substrate 32; forming the second epitaxial light-emitting structure on the second growth substrate 32;

[0203] S42: providing a second temporary substrate 31 with a bonding layer on its surface; and transferring the second epitaxial light-emitting structure to the second temporary substrate 31; wherein a surface of the second epitaxial light-emitting structure facing away from the second growth substrate 32 is formed on the second temporary substrate 31;

[0204] S43: peeling off the second growth substrate 32, bonding the second epitaxial light-emitting structure to the first bonding layer 9 on a side facing away from the second temporary substrate 31, and removing the second temporary substrate 31; Figure 8 As shown;

[0205] S44: providing a first growth substrate 21; forming the first epitaxial light-emitting structure on the first growth substrate 21;

[0206] S45: providing a first temporary substrate 20 having a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate 20; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate 21 is formed on the first temporary substrate 20;

[0207] S46: peeling off the first growth substrate 21, bonding the first epitaxial light-emitting structure to the second epitaxial light-emitting structure on a side facing away from the first temporary substrate 20, and removing the first temporary substrate 20; forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure in sequence on the third epitaxial light-emitting structure, such as Fig. 9 shown.

[0208] In one embodiment, in step S43, before bonding the second epitaxial light-emitting structure on a side facing away from the second temporary substrate to the first bonding layer 9, the step further includes:

[0209] Etching the first passivation layer 10 on the surface of the first bonding layer 9 to form a first cavity; wherein the size of the first cavity is adapted to the size of the second epitaxial light-emitting structure;

[0210] The first epitaxial light-emitting structure has a surface facing away from the first temporary substrate 20 bonded to the first bonding layer 9 in the first cavity.

[0211] In one embodiment, in step S43, after bonding the second epitaxial light-emitting structure on a side facing away from the second temporary substrate to the first bonding layer 9 and removing the second temporary substrate 32, the method further includes:

[0212] The third reflector layer 26 and the second bonding layer 27 are formed; the third reflector layer 26 and the second bonding layer 27 are sequentially formed between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is bonded to the third reflector layer 26 through the second bonding layer 27.

[0213] In one embodiment, in step S46, before bonding the surface of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 to the second epitaxial light-emitting structure, the method further includes:

[0214] Etching the third passivation layer 28 on the surface of the second bonding layer 27 to form a second cavity; wherein the size of the second cavity is adapted to the size of the first epitaxial light-emitting structure;

[0215] The first epitaxial light-emitting structure has a surface facing away from the first temporary substrate 20 bonded to the second bonding layer 27 in the second cavity.

[0216] In a specific embodiment, step S41: forming the second epitaxial light-emitting structure on the second growth substrate 32 specifically includes: steps S411-S412:

[0217] S411: stacking the third N-type GaN layer 22, the second light-emitting layer 23, the third P-type GaN layer 24, the third current spreading layer 25 and the third passivation layer 28 in sequence in a direction away from the substrate 1; wherein the third N-type GaN layer 22 includes the fourth step structure;

[0218] S412: forming the third N electrode 29 and the third P electrode 30;

[0219] Wherein, the third N electrode 29 is formed on the fourth step structure; the second bonding layer 27 and the third reflector layer 26 are formed on part of the third current spreading layer 25 to form a fifth step structure; the third P electrode 30 is formed on the fifth step structure; the third passivation layer 28 covers the fourth step structure, and covers the second light-emitting layer 23, the third P-type GaN layer 24, the side walls of the third current spreading layer 25 and the third reflector layer 26, and the surface and side walls of the second bonding layer 27, as shown in FIG. Figure 7 shown.

[0220] In one embodiment, in step S412, forming the third N electrode 29 and the third P electrode 30 specifically includes: steps S4121-S4122:

[0221] S4121: etching a portion of the third passivation layer 28 on the surface of the fourth step structure to form a third N-electrode cavity; and etching the third passivation layer 28 on the surface of the fifth step structure to form a third P-electrode cavity;

[0222] S4122: depositing metal material in the third N-electrode cavity and the third P-electrode cavity to form the third N-electrode 29 in the third N-electrode cavity; and forming the third P-electrode 30 in the third P-electrode cavity.

[0223] In another specific embodiment, step S44: forming the first epitaxial light-emitting structure on the first growth substrate 21 specifically includes: steps S441-S442:

[0224] S441: stacking a second N-type GaN layer 13, a first light-emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16, and a second passivation layer 17 in sequence in a direction away from the substrate 1; wherein the second N-type GaN layer 13 includes a third step structure;

[0225] S442: forming a second N electrode 19 and a second P electrode 18;

[0226] The second N-electrode 19 is formed on the third step structure; the second P-electrode 18 is formed on a portion of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the first light-emitting layer 14, the sidewalls of the second P-type GaN layer 15, and the surface and sidewalls of the second current spreading layer 16, such as Figure 3 shown.

[0227] In one embodiment, in step S442, forming the second N electrode 19 and the second P electrode 18 specifically includes: steps S4421-S4422:

[0228] S4421: etching a portion of the second passivation layer 17 in the third step structure to form a second N-electrode cavity; and etching a portion of the second passivation layer 17 on the top of the second current spreading layer 16 to form a second P-electrode cavity;

[0229] S4422: depositing a metal material in the second N-electrode cavity and the second P-electrode cavity to form the second N-electrode 19 in the second N-electrode cavity; and forming the second P-electrode 18 in the second P-electrode cavity;

[0230] The first N electrode 11, the second N electrode 19 and the third N electrode 29 constitute the N electrode of the vertically stacked LED chip structure; the first P electrode 12, the second P electrode 18 and the third P electrode 30 constitute the P electrode of the vertically stacked LED chip structure. Fig.10 shown.

[0231] In one embodiment, in step S412, a third N electrode 29 and a third P electrode 30 are formed; in step S442, after the second N electrode 19 and the second P electrode 18 are formed, the method further includes:

[0232] The first N electrode 11, the second N electrode 19 and the third N electrode 29 are interconnected to form the N electrode of the vertically stacked LED chip. Fig.11 shown.

[0233] The technical solution proposed in this embodiment of the present invention realizes the effect that a vertically stacked LED chip structure can cover all colors by forming a third epitaxial light-emitting structure, a second epitaxial light-emitting structure and a first epitaxial light-emitting structure stacked in sequence on a substrate, so that the vertically stacked LED chips can selectively emit light of multiple colors; and the third epitaxial light-emitting structure adopts a color conversion method to achieve the effect of color conversion of the third epitaxial light-emitting structure; at the same time, a first reflector layer is formed on the opposite side of the light-emitting surface of the vertically stacked LED chips to achieve the effect of improving the light-emitting efficiency and the light-emitting brightness.

[0234] In addition, according to an embodiment of the present invention, an electronic device is provided, comprising the vertically stacked LED chip structure described in the foregoing embodiment of the present invention.

[0235] Finally, according to an embodiment of the present invention, a method for manufacturing an electronic device is also provided, characterized in that it includes a method for manufacturing the vertically stacked LED chip structure according to the aforementioned embodiment of the present invention.

[0236] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vertically stacked LED chip structure, characterized in that: include: substrate; A first epitaxial light emitting structure and a second epitaxial light emitting structure, or only the first epitaxial light emitting structure; a third epitaxial light emitting structure; The third epitaxial light-emitting structure includes a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially stacked on the substrate in a direction away from the substrate; The first reflector layer is formed between the substrate and the color conversion layer, and is used to reflect the light emitted by the third epitaxial light-emitting structure to the light-emitting surface of the vertically stacked LED chip structure.

2. The vertically stacked LED chip structure according to claim 1, characterized in that: The first reflector layer is a DBR reflector or a metal reflector.

3. The vertically stacked LED chip structure according to claim 2, characterized in that: The third epitaxial light-emitting structure further includes: A third epitaxial light-emitting structure stack, a second reflector layer and a first bonding layer; the color conversion layer, the third epitaxial light-emitting structure stack, the second reflector layer and the first bonding layer are sequentially stacked on the substrate in a direction away from the substrate; The second reflector layer and the first bonding layer are used to transmit light emitted by the third epitaxial light-emitting structure.

4. The vertically stacked LED chip structure according to claim 3, characterized in that: The third epitaxial light-emitting structure stack comprises: A first N-type GaN layer, a blue light-emitting layer, a first P-type GaN layer, a first current spreading layer and a first passivation layer are sequentially stacked in a direction away from the substrate; wherein the first N-type GaN layer includes a first step structure; a first N-electrode and a first P-electrode; Among them, the first N electrode is formed on the first step structure; the first bonding layer and the second reflector layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; the first passivation layer covers the first step structure, and covers the blue light-emitting layer, the first P-type GaN layer, the side walls of the first current spreading layer and the second reflector layer, and the surface and side walls of the first bonding layer.

5. The vertically stacked LED chip structure according to claim 4, characterized in that: When the vertically stacked LED chip structure includes only the first epitaxial light emitting structure and the third epitaxial light emitting structure, the first epitaxial light emitting structure is formed on the first bonding layer; The second reflector layer is also used to reflect the light emitted by the first epitaxial light-emitting structure.

6. The vertically stacked LED chip structure according to claim 5, characterized in that: The color conversion layer is a red color conversion layer or a green color conversion layer.

7. The vertically stacked LED chip structure according to claim 4, characterized in that: When the vertically stacked LED chip structure includes the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, the vertically stacked LED chip structure further includes: A third reflector layer and a second bonding layer; the third reflector layer and the second bonding layer are sequentially formed on the second epitaxial light-emitting structure in a direction away from the substrate; wherein the first epitaxial light-emitting structure is formed on the second bonding layer; the second epitaxial light-emitting structure is formed on the first bonding layer; wherein the third reflector layer and the second bonding layer are used to transmit light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure and reflect light emitted by the first epitaxial light-emitting structure; the second reflector layer is also used to reflect light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

8. The vertically stacked LED chip structure according to claim 7, characterized in that: The second reflector layer and the third reflector layer are both DBR reflectors.

9. The vertically stacked LED chip structure according to claim 8, characterized in that: The color conversion layer is a red color conversion layer.

10. A method for manufacturing a vertically stacked LED chip structure, characterized in that: A method for manufacturing a vertically stacked LED chip structure according to any one of claims 1 to 9, comprising: Providing a substrate as described above; forming the first reflector layer, wherein the first reflector layer is formed on the surface of the substrate; forming the third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises the color conversion layer; wherein the color conversion layer is formed on the surface of the first reflector layer; The second epitaxial light emitting structure and the first epitaxial light emitting structure are sequentially formed on the third epitaxial light emitting structure in a direction away from the substrate, or only the first epitaxial light emitting structure is formed.

11. The method for manufacturing a vertically stacked LED chip structure according to claim 10, characterized in that: The first reflector layer is formed by sputtering or evaporation.

12. The method for manufacturing a vertically stacked LED chip structure according to claim 11, characterized in that: Forming the third epitaxial light-emitting structure specifically includes: The color conversion layer, the third epitaxial light emitting structure stack, the second reflector layer and the first bonding layer are sequentially formed on the first reflector layer in a direction away from the substrate.

13. The method for manufacturing a vertically stacked LED chip structure according to claim 12, characterized in that: Forming the first epitaxial light-emitting structure on the third epitaxial light-emitting structure specifically includes: Providing a first growth substrate; forming the first epitaxial light-emitting structure on the first growth substrate; Providing a first temporary substrate with a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate is formed on the first temporary substrate; The first growth substrate is peeled off, a surface of the first epitaxial light-emitting structure facing away from the first temporary substrate is bonded to the first bonding layer, and the first temporary substrate is removed; so as to form the first epitaxial light-emitting structure on the third epitaxial light-emitting structure.

14. The method for manufacturing a vertically stacked LED chip structure according to claim 12, characterized in that: Sequentially forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate specifically includes: Providing a second growth substrate; forming the second epitaxial light-emitting structure on the second growth substrate; Providing a second temporary substrate with a bonding layer on its surface; and transferring the second epitaxial light-emitting structure to the second temporary substrate; wherein a side of the second epitaxial light-emitting structure facing away from the second growth substrate is formed on the second temporary substrate; Peeling off the second growth substrate, bonding the second epitaxial light-emitting structure to the first bonding layer at a side facing away from the second temporary substrate, and removing the second temporary substrate; Providing a first growth substrate; forming the first epitaxial light-emitting structure on the first growth substrate; Providing a first temporary substrate with a bonding layer on its surface; and transferring the first epitaxial light-emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light-emitting structure facing away from the first growth substrate is formed on the first temporary substrate; The first growth substrate is peeled off, a side of the first epitaxial light-emitting structure facing away from the first temporary substrate is bonded to the second epitaxial light-emitting structure, and the first temporary substrate is removed; so as to sequentially form the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure.

15. The method for manufacturing a vertically stacked LED chip structure according to claim 14, characterized in that: After bonding the second epitaxial light-emitting structure at a side facing away from the second temporary substrate to the first bonding layer and removing the second temporary substrate, the method further includes: The third reflector layer and the second bonding layer are formed; the third reflector layer and the second bonding layer are sequentially formed between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is bonded to the third reflector layer through the second bonding layer.

16. The method for manufacturing a vertically stacked LED chip structure according to any one of claims 13 or 15, characterized in that: The color conversion layer is formed by dipping or spin coating.

17. The method for manufacturing a vertically stacked LED chip structure according to claim 16, characterized in that: Forming the third epitaxial light-emitting structure stack specifically includes: The first N-type GaN layer, the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer and the first passivation layer are sequentially formed on the color conversion layer in a direction away from the substrate; wherein the first N-type GaN layer has the first step structure; forming the first N electrode and the first P electrode; Among them, the first N electrode is formed on the first step structure; the second reflector layer and the first bonding layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; the first passivation layer covers the first step structure, and covers the blue light-emitting layer, the first P-type GaN layer, the side walls of the first current spreading layer and the second reflector layer, and the surface and side walls of the first bonding layer.

18. An electronic device, characterized in that: A vertically stacked LED chip structure comprising any one of claims 1-9.

19. A method for manufacturing an electronic device, characterized in that: A method for manufacturing a vertically stacked LED chip structure comprising the steps of any one of claims 10 to 17.

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