Vertical stacked LED chip structure and method of manufacturing the same

Abstract

The application provides a vertical stacked LED chip structure and a manufacturing method thereof, and the vertical stacked LED chip structure comprises: a substrate, a first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only the first epitaxial light-emitting structure; a third epitaxial light-emitting structure; a color conversion layer in the third epitaxial light-emitting structure; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure, are sequentially stacked on the substrate in a direction away from the substrate; and a first mirror layer is formed between the substrate and the color conversion layer, and is used for reflecting light emitted by the third epitaxial light-emitting structure to a light-emitting surface of the vertical stacked LED chip structure, so that the problem of low light-emitting efficiency of the vertical stacked LED chip is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor, in particular to a vertical stacked LED chip structure and a manufacturing method thereof. BACKGROUND

[0002] At present, for the purpose of reducing the size of chip and considering the integration technology, a vertical stacked LED chip structure is developed, which can realize two or three basic colors in one LED chip structure and can independently process single LED pixel, so that the LED chip structure can selectively emit light of multiple colors. However, due to the connection of wiring or driving circuit, the display effect of the vertical stacked LED chip structure, especially the LED pixel in the bottom layer, is not ideal, and the light emission efficiency is low.

[0003] Therefore, how to fully stimulate the LED pixel in the bottom layer of the vertical LED chip structure and improve the light emission efficiency of the vertical LED chip structure has become a big problem to be solved by the technical personnel in the field. SUMMARY

[0004] The present application provides a vertical stacked LED chip structure and a manufacturing method thereof, to solve the problem of low light emission efficiency of the vertical stacked LED chip.

[0005] According to a first aspect of the present application, a vertical stacked LED chip structure is provided, comprising:

[0006] a substrate;

[0007] a first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only comprising a first epitaxial light-emitting structure;

[0008] a third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure, are stacked on the substrate in turn in the direction away from the substrate;

[0009] a first mirror layer formed between the substrate and the color conversion layer, for reflecting the light emitted by the third epitaxial light-emitting structure to the light emitting surface of the vertical stacked LED chip structure.

[0010] Optionally, the first mirror layer is a DBR mirror or a metal mirror.

[0011] Optionally, the third epitaxial light-emitting structure further comprises:

[0012] a third epitaxial light-emitting structure stack, a second mirror layer and a first bonding layer; the color conversion layer, the third epitaxial light-emitting structure stack, the second mirror layer and the first bonding layer are sequentially stacked on the substrate in a direction away from the substrate;

[0013] The second mirror layer and the first bonding layer are configured to transmit light emitted by the third epitaxial light-emitting structure.

[0014] Optionally, the third epitaxial light-emitting structure stack comprises:

[0015] a first N-type GaN layer, a blue light-emitting layer, a first P-type GaN layer, a first current spreading layer and a first passivation layer, which are sequentially stacked in a direction away from the substrate; the first N-type GaN layer comprises a first step structure.

[0016] a first N electrode and a first P electrode.

[0017] The first N electrode is formed on the first step structure; the first bonding layer and the second mirror layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; and the first passivation layer covers the first step structure, and covers the side walls of the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer and the second mirror layer, and the surface and side walls of the first bonding layer.

[0018] Optionally, when the vertically-stacked LED chip structure comprises only the first epitaxial light-emitting structure and the third epitaxial light-emitting structure, the first epitaxial light-emitting structure is formed on the first bonding layer.

[0019] The second mirror layer is further configured to reflect light emitted by the first epitaxial light-emitting structure.

[0020] Optionally, the color conversion layer is a red color conversion layer or a green color conversion layer.

[0021] Optionally, when the vertically-stacked LED chip structure comprises the third epitaxial light-emitting structure, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, the vertically-stacked LED chip structure further comprises:

[0022] a third mirror layer and a second bonding layer; the third mirror layer and the second bonding layer are sequentially formed on the second epitaxial light-emitting structure in a direction away from the substrate.

[0023] In which, the first epitaxial light-emitting structure is formed on the second bonding layer; the second epitaxial light-emitting structure is formed on the first bonding layer; in which, the third reflector layer and the second bonding layer are used to transmit the light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure and reflect the light emitted by the first epitaxial light-emitting structure; the second reflector layer is also used to reflect the light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

[0024] Optionally, the second reflector layer and the third reflector layer are both DBR reflectors.

[0025] Optionally, the color conversion layer is a red color conversion layer.

[0026] According to a second aspect of the present invention, a method for manufacturing a vertically stacked LED chip structure is provided, for manufacturing the vertically stacked LED chip structure according to any one of the first aspects of the present invention, comprising:

[0027] providing the substrate;

[0028] forming the first reflector layer, wherein the first reflector layer is formed on the surface of the substrate;

[0029] forming the third epitaxial light-emitting structure; the third epitaxial light-emitting structure includes the color conversion layer; wherein the color conversion layer is formed on the surface of the first reflector layer;

[0030] The second epitaxial light emitting structure and the first epitaxial light emitting structure are sequentially formed on the third epitaxial light emitting structure in a direction away from the substrate, or only the first epitaxial light emitting structure is formed.

[0031] Optionally, the first reflector layer is formed by sputtering or evaporation.

[0032] Optionally, forming the third epitaxial light-emitting structure specifically includes:

[0033] The color conversion layer, the third epitaxial light-emitting structure stack, the second reflector layer and the first bonding layer are sequentially formed on the first reflector layer in a direction away from the substrate.

[0034] Optionally, forming the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate specifically includes:

[0035] Providing a first growth substrate; forming the first epitaxial light-emitting structure on the first growth substrate;

[0036] providing a first temporary substrate with a bonding layer on a surface thereof; and transferring the first epitaxial light emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light emitting structure, which is away from the first growth substrate, is formed on the first temporary substrate;

[0037] peeling off the first growth substrate, bonding a surface of the first epitaxial light emitting structure, which is away from the first temporary substrate, on the first bonding layer, and removing the first temporary substrate; so as to form the first epitaxial light emitting structure on the third epitaxial light emitting structure.

[0038] Optionally, sequentially forming the second epitaxial light emitting structure and the first epitaxial light emitting structure on the third epitaxial light emitting structure in a direction away from the substrate comprises:

[0039] providing a second growth substrate; and forming the second epitaxial light emitting structure on the second growth substrate;

[0040] providing a second temporary substrate with a bonding layer on a surface thereof; and transferring the second epitaxial light emitting structure to the second temporary substrate; wherein a surface of the second epitaxial light emitting structure, which is away from the second growth substrate, is formed on the second temporary substrate;

[0041] peeling off the second growth substrate, bonding a surface of the second epitaxial light emitting structure, which is away from the second temporary substrate, on the first bonding layer, and removing the second temporary substrate;

[0042] providing a first growth substrate; and forming the first epitaxial light emitting structure on the first growth substrate;

[0043] providing a first temporary substrate with a bonding layer on a surface thereof; and transferring the first epitaxial light emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light emitting structure, which is away from the first growth substrate, is formed on the first temporary substrate;

[0044] peeling off the first growth substrate, bonding a surface of the first epitaxial light emitting structure, which is away from the first temporary substrate, on the second epitaxial light emitting structure, and removing the first temporary substrate; so as to sequentially form the second epitaxial light emitting structure and the first epitaxial light emitting structure on the third epitaxial light emitting structure.

[0045] Optionally, after bonding a surface of the second epitaxial light emitting structure, which is away from the second temporary substrate, on the first bonding layer, and removing the second temporary substrate, the method further comprises:

[0046] forming the third mirror layer and the second bonding layer; the third mirror layer and the second bonding layer are formed in sequence between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is bonded to the third mirror layer through the second bonding layer.

[0047] Optionally, the color conversion layer is formed by soaking or spin coating.

[0048] Optionally, forming the third epitaxial light-emitting structure stack specifically comprises:

[0049] forming the first N-type GaN layer, the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer and the first passivation layer in sequence on the color conversion layer and away from the substrate; wherein the first N-type GaN layer has the first step structure;

[0050] forming the first N electrode and the first P electrode;

[0051] wherein the first N electrode is formed on the first step structure; the second mirror layer and the first bonding layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; the first passivation layer covers the first step structure, and covers the side walls of the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer and the second mirror layer, and the surface and side walls of the first bonding layer.

[0052] According to a third aspect of the present application, there is provided an electronic device comprising the vertically stacked LED chip structure according to any one of the first aspect of the present application.

[0053] According to a fourth aspect of the present application, there is provided a manufacturing method of an electronic device, comprising the manufacturing method of the vertically stacked LED chip structure according to any one of the second aspect of the present application.

[0054] The vertically stacked LED chip structure provided by the present application achieves the color conversion effect of the third epitaxial light-emitting structure by arranging the color conversion layer in the third epitaxial light-emitting structure, further enables the vertically stacked LED chip to selectively emit light of multiple colors; meanwhile, the light emitted by the third epitaxial light-emitting structure is reflected to the light emitting surface of the vertically stacked LED chip by arranging the first mirror layer between the substrate and the color conversion layer, thereby improving the light emitting efficiency of the vertically stacked LED chip structure. It can be seen that the technical solution provided by the present application solves the problem of low light emitting rate of the vertically stacked LED chip. BRIEF DESCRIPTION OF DRAWINGS

[0055] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced as follows. Obviously, the accompanying drawings in the following description only only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0056] Figure 1 is a flowchart of a manufacturing method of a vertical stacked LED chip structure provided by an embodiment of the present application;

[0057] Figure 2 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a first specific embodiment of the present application Figure One ;

[0058] Figure 3 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a first specific embodiment of the present application Figure Two ;

[0059] Figure 4 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a first specific embodiment of the present application Figure Three ;

[0060] Figure 5 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a first specific embodiment of the present application Figure Four ;

[0061] Figure 6 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a first specific embodiment of the present application Figure Five ;

[0062] Figure 7 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a second specific embodiment of the present application Figure One ;

[0063] Figure 8 is a device structure schematic of different process stages of a manufacturing method of a vertical stacked LED chip structure provided by a second specific embodiment of the present application Figure Two ;

[0064] Figure 9is the device structure schematic of different process stages of the manufacturing method of the vertical stacked LED chip structure provided by the second embodiment of the present application Figure Three ;

[0065] Figure 10 is the device structure schematic of different process stages of the manufacturing method of the vertical stacked LED chip structure provided by the second embodiment of the present application Figure Four ;

[0066] Figure 11 is the device structure schematic of different process stages of the manufacturing method of the vertical stacked LED chip structure provided by the second embodiment of the present application Figure Five .

[0067] BRIEF DESCRIPTION OF DRAWINGS

[0068] Substrate

[0069] First mirror layer

[0070] Color conversion layer

[0071] First N-type GaN layer

[0072] Blue light-emitting layer

[0073] First P-type GaN layer

[0074] First current spreading layer

[0075] Second mirror layer

[0076] First bonding layer

[0077] First passivation layer

[0078] First N electrode

[0079] First P electrode

[0080] Second N-type GaN layer

[0081] First light-emitting layer

[0082] Second P-type GaN layer

[0083] Second current spreading layer

[0084] Second passivation layer

[0085] Second P electrode

[0086] Second N electrode

[0087] First temporary substrate

[0088] First growth substrate

[0089] a third N-type GaN layer;

[0090] a second light emitting layer;

[0091] a third P-type GaN layer;

[0092] a third current spreading layer;

[0093] a third mirror layer;

[0094] a second bonding layer;

[0095] a third passivation layer;

[0096] a third N-electrode;

[0097] a third P-electrode;

[0098] a second temporary substrate;

[0099] a second growth substrate. DETAILED DESCRIPTION

[0100] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work are within the protection scope of the present application.

[0101] The terms "first", "second", "third", "fourth" and the like in the description and claims of the present application and above-mentioned drawings (if any) are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in other than the order illustrated or described herein. In addition, the terms "comprise" and "have" and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a list of steps or units is not necessarily limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to such processes, methods, products or devices.

[0102] At present, for the consideration of reducing the size of the chip and the integration technology, a vertical stacked LED chip structure is developed, which can realize that two or three basic colors are contained in one LED chip structure and can independently process a single LED pixel, so that the LED chip structure can selectively emit light of multiple colors, but due to the connection of wiring or driving circuit and the like, the light emitting effect of the vertical stacked LED chip structure is poor, especially the light emitting efficiency of the LED pixel at the bottom layer of the LED chip is low.

[0103] Therefore, the inventor of the present application proposes that by arranging a color conversion layer on the bottom layer LED pixel, the color conversion effect of the bottom layer LED pixel can be realized, and a first mirror layer is introduced, so that the color conversion layer is formed on the first mirror layer, so that the first mirror layer can reflect the light emitted by the bottom layer LED pixel to the light emitting surface of the vertical stacked LED chip, thereby improving the light emitting efficiency of the bottom layer LED pixel, and further enabling the vertical stacked LED chip to achieve better light emitting effect.

[0104] It can be seen that the technical scheme provided by the present application can solve the problem of low light emitting efficiency of the LED pixel at the bottom layer of the vertical stacked LED chip.

[0105] The technical scheme of the present application will be described in detail below with specific examples. The following specific examples can be combined with each other, and the same or similar concepts or processes may not be described in some examples.

[0106] Reference is made to Figures 1-11 According to an embodiment of the present application, a vertical stacked LED chip structure is provided, comprising:

[0107] a substrate 1;

[0108] a first epitaxial light emitting structure and a second epitaxial light emitting structure, or only a first epitaxial light emitting structure (here, the first epitaxial light emitting structure and the second epitaxial light emitting structure, and the first epitaxial light emitting structure only, the naming of the epitaxial light emitting structure is only for convenience of description, and the specific meaning can be referred to the description of the two specific embodiments in the subsequent description of the present application) ;

[0109] a third epitaxial light emitting structure; the third epitaxial light emitting structure comprises a color conversion layer 3; wherein the third epitaxial light emitting structure, the second epitaxial light emitting structure and the first epitaxial light emitting structure, or the third epitaxial light emitting structure and the first epitaxial light emitting structure are stacked on the substrate 1 in the direction away from the substrate 1;

[0110] A first mirror layer 2 is formed between the substrate 1 and the color conversion layer 3, and is used to reflect the light emitted by the third epitaxial light emitting structure to the light emitting surface of the vertically stacked LED chip structure.

[0111] The light emitting surface of the vertically stacked LED chip refers to the surface of the first epitaxial light emitting structure away from the substrate; the first mirror layer is arranged between the third epitaxial light emitting structure and the substrate, and is used to reflect the light beam in the vertically stacked LED chip to the light emitting surface of the vertically stacked LED chip, so as to improve the light emitting efficiency of the vertically stacked LED chip.

[0112] In a preferred embodiment, the first mirror layer is used to totally reflect the light emitted by the third epitaxial light emitting structure to the light emitting surface of the vertically stacked LED chip structure.

[0113] In another embodiment, the first mirror layer can also be used to at least partially reflect the light emitted by the third epitaxial light emitting structure to the light emitting surface of the vertically stacked LED chip structure.

[0114] The vertically stacked LED chip structure provided by the present application realizes the effect of emitting light beams of corresponding colors by the third epitaxial light emitting structure through the arrangement of the color conversion layer in the third epitaxial light emitting structure, and introduces the first mirror layer between the substrate and the color conversion layer, so that the first mirror layer can reflect the light emitted by the third epitaxial light emitting structure to the light emitting surface of the vertically stacked LED chip.

[0115] It can be seen that the technical scheme provided by the present application realizes the effect of emitting light beams of corresponding colors by the third epitaxial light emitting structure through color conversion, and improves the light emitting efficiency of the third epitaxial light emitting structure by arranging the first mirror layer on the opposite surface of the light emitting surface of the vertically stacked LED chip, so as to realize better light emitting effect and improve the light emitting efficiency of the vertically stacked LED chip.

[0116] In addition, by sequentially forming the second epitaxial light emitting structure and the first epitaxial light emitting structure on the third epitaxial light emitting structure, or only forming the first epitaxial light emitting structure, a three-layer stacked or two-layer stacked vertically LED chip structure can be formed, so that the vertically stacked LED chip can selectively emit light in two or three colors.

[0117] In an embodiment, the thickness of the color conversion layer 3 is 1um-4um.

[0118] In an embodiment, the first mirror layer 2 is a DBR mirror or a metal mirror.

[0119] In an embodiment, the third epitaxial light emitting structure further comprises:

[0120] a third epitaxial light-emitting structure stack, a second mirror layer 8 and a first adhesive layer 9; the color conversion layer 3, the third epitaxial light-emitting structure stack, the second mirror layer 8 and the first adhesive layer 9 are sequentially stacked on the substrate 1 in a direction away from the substrate 1;

[0121] The second mirror layer 8 and the first adhesive layer 9 are configured to transmit light emitted by the third epitaxial light-emitting structure.

[0122] In a preferred embodiment, the second mirror layer 8 and the first adhesive layer 9 are fully transmissive to light emitted by the third epitaxial light-emitting structure.

[0123] In another embodiment, the second mirror layer 8 and the first adhesive layer 9 are at least partially transmissive to light emitted by the third epitaxial light-emitting structure.

[0124] In a specific embodiment, the third epitaxial light-emitting structure stack comprises:

[0125] a first N-type GaN layer 4, a blue light-emitting layer 5, a first P-type GaN layer 6, a first current spreading layer 7 and a first passivation layer 10 sequentially stacked in a direction away from the substrate 1; wherein the first N-type GaN layer 4 comprises a first step structure;

[0126] a first N-electrode 11 and a first P-electrode 12;

[0127] The first N-electrode 11 is formed on the first step structure; the first adhesive layer 9 and the second mirror layer 8 are formed on part of the first current spreading layer 7 to form a second step structure; the first P-electrode 12 is formed on the second step structure; the first passivation layer 10 covers the first step structure, and covers the side walls of the blue light-emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the second mirror layer 8, and the surface and side walls of the first adhesive layer 9, as shown in Figure 2

[0128] The vertically stacked LED chip structure according to the present application has the following two specific embodiments:

[0129] In a first specific embodiment, when the vertically stacked LED chip structure comprises only a first epitaxial light-emitting structure and the third epitaxial light-emitting structure, the first epitaxial light-emitting structure is formed on the first adhesive layer 9;

[0130] The second mirror layer 8 is further configured to reflect light emitted by the first epitaxial light-emitting structure.

[0131] ​In a preferred embodiment, the second mirror layer 8 is totally reflective to the light emitted by the first epitaxial light emitting structure.

[0132] In one embodiment, the first epitaxial light emitting structure comprises:

[0133] a second N-type GaN layer 13, a first light emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16 and a second passivation layer 17, which are stacked in sequence away from the substrate 1; wherein the second N-type GaN layer 13 comprises a third step structure;

[0134] a second N-electrode 19 and a second P-electrode 18;

[0135] wherein the second N-electrode 19 is formed on the third step structure; the second P-electrode 18 is formed on part of the second current spreading layer 16; and the second passivation layer 17 covers the third step structure, and covers the sidewalls of the first light emitting layer 14 and the second P-type GaN layer 15, and covers the surface and sidewalls of the second current spreading layer 16.

[0136] In one embodiment, the first N-electrode 11 and the second N-electrode 19 constitute the N-electrodes of the vertically stacked LED chip; the first P-electrode 12 and the second P-electrode 18 constitute the P-electrodes of the vertically stacked LED chip; and the vertically stacked LED chip structure is as shown in Figure 5 .

[0137] In another embodiment, the first N-electrode 11 and the second N-electrode 19 are interconnected to form the N-electrodes of the vertically stacked LED chip structure, as shown in Figure 6 .

[0138] In a specific embodiment, the color conversion layer 3 is a red color conversion layer or a green color conversion layer; the first light emitting layer 14 is a blue light emitting layer or a green light emitting layer; and the second mirror layer 8 is used for transmitting red light and reflecting blue light or green light, or for transmitting green light and reflecting blue light.

[0139] In one embodiment, the first epitaxial light emitting structure and the third epitaxial light emitting structure are respectively a blue epitaxial light emitting structure and a red epitaxial light emitting structure.

[0140] In another embodiment, the first epitaxial light emitting structure and the third epitaxial light emitting structure are respectively a blue epitaxial light emitting structure and a green epitaxial light emitting structure.

[0141] In other embodiments, the first epitaxial light emitting structure and the third epitaxial light emitting structure are respectively a green epitaxial light emitting structure and a red epitaxial light emitting structure.

[0142] The two light emitting structures are vertically stacked, on one hand, the third epitaxial light emitting structure emits light beams of corresponding colors through color conversion; on the other hand, the first mirror layer is arranged on the opposite surface of the light emitting surface of the vertically stacked LED chip, thereby improving the light emitting efficiency of the third epitaxial light emitting structure, achieving better light emitting effect, and improving the light emitting efficiency of the two light emitting structures vertically stacked in the LED chip.

[0143] In addition, in the scheme provided in the specific embodiment, the first epitaxial light emitting structure is formed on the third epitaxial light emitting structure, thereby covering two basic colors in one vertically stacked LED chip, achieving higher resolution, and selective light emitting effect.

[0144] In the second specific embodiment, when the vertically stacked LED chip structure includes the third epitaxial light emitting structure, the second epitaxial light emitting structure and the first epitaxial light emitting structure, the vertically stacked LED chip structure further includes:

[0145] The third mirror layer 26 and the second bonding layer 27 are sequentially formed on the second epitaxial light emitting structure in a direction away from the substrate 1.

[0146] The first epitaxial light emitting structure is formed on the second bonding layer 27; the second epitaxial light emitting structure is formed on the first bonding layer 9; the third mirror layer 26 and the second bonding layer 27 are used for transmitting light emitted by the second epitaxial light emitting structure and the third epitaxial light emitting structure and reflecting light emitted by the first epitaxial light emitting structure; and the second mirror layer 8 is further used for reflecting light emitted by the first epitaxial light emitting structure and the second epitaxial light emitting structure.

[0147] In a preferred embodiment, the third mirror layer 26 and the second bonding layer 27 are fully transmissive to light emitted by the second epitaxial light emitting structure and the third epitaxial light emitting structure; the third mirror layer 26 is fully reflective to light emitted by the first epitaxial light emitting structure; and the second mirror layer 8 is fully reflective to light emitted by the first epitaxial light emitting structure and the second epitaxial light emitting structure.

[0148] In an embodiment, the first bonding layer 9 and the second bonding layer 27 are respectively bonded to the second mirror layer 8 and the third mirror layer 26 by wafer bonding technology.

[0149] In an embodiment, the second mirror layer 8 and the third mirror layer 26 are DBR mirrors.

[0150] In one embodiment, the first bonding layer 9 and the second bonding layer 27 are both transparent glue layers.

[0151] In one specific embodiment, the second epitaxial light emitting structure comprises:

[0152] a third N-type GaN layer 22, a second light emitting layer 23, a third P-type GaN layer 24, a third current spreading layer 25 and a third passivation layer 28 stacked in sequence in a direction away from the substrate 1; wherein the third N-type GaN layer 22 comprises a fourth step structure;

[0153] a third N electrode 29 and a third P electrode 30;

[0154] wherein the third N electrode 29 is formed on the fourth step structure; the second bonding layer 27 and the third mirror layer 26 are formed on part of the third current spreading layer 25 to form a fifth step structure; the third P electrode 30 is formed on the fifth step structure; the third passivation layer 28 covers the fourth step structure, and covers the sidewalls of the second light emitting layer 23, the third P-type GaN layer 24, the third current spreading layer 25 and the third mirror layer 26, and the surface and sidewalls of the second bonding layer 27.

[0155] In another specific embodiment, the first epitaxial light emitting structure comprises:

[0156] a second N-type GaN layer 13, a first light emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16 and a second passivation layer 17 stacked in sequence in a direction away from the substrate 1; wherein the second N-type GaN layer 13 comprises a third step structure;

[0157] a second N electrode 19 and a second P electrode 18;

[0158] wherein the second N electrode 19 is formed on the third step structure; the second P electrode 18 is formed on part of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the sidewalls of the first light emitting layer 14 and the second P-type GaN layer 15, and the surface and sidewalls of the second current spreading layer 16.

[0159] In one embodiment, the first N electrode 11, the second N electrode 19 and the third N electrode 29 constitute N electrodes of a vertically stacked LED chip; the first P electrode 12, the second P electrode 18 and the third P electrode 30 constitute P electrodes of the vertically stacked LED chip; the vertically stacked LED chip structure is as shown in Figure 10 .

[0160] In another embodiment, the first N-electrode 11, the second N-electrode 19 and the third N-electrode 29 are interconnected to form an N-electrode of the vertically-stacked LED chip structure, as shown in Figure 11

[0161] In a specific embodiment, the color conversion layer 3 is a red color conversion layer; the first light-emitting layer 14 is a blue light-emitting layer; the second light-emitting layer 23 is a green light-emitting layer; the second mirror layer 8 is configured to transmit red light and reflect blue light and green light; and the third mirror layer 26 is configured to transmit red light and green light and reflect blue light.

[0162] In an embodiment, the first epitaxial light-emitting structure, the second epitaxial light-emitting structure and the third epitaxial light-emitting structure are a blue epitaxial light-emitting structure, a green epitaxial light-emitting structure and a red epitaxial light-emitting structure, respectively.

[0163] The vertically-stacked structure of the three light-emitting structures provided by the specific embodiment, on the one hand, realizes the effect of the third epitaxial light-emitting structure emitting a light beam of a corresponding color through color conversion; on the other hand, improves the light-emitting efficiency of the third epitaxial light-emitting structure by arranging the first mirror layer on the opposite side of the light-emitting surface of the vertically-stacked LED chip, realizes better light-emitting effect, and improves the light-emitting efficiency of the three-layer light-emitting structure of the vertically-stacked LED chip.

[0164] In addition, in the scheme provided by the embodiment, the second epitaxial light-emitting structure and the first epitaxial light-emitting structure are formed on the third epitaxial light-emitting structure in sequence, which can realize the effect of covering full color in one vertically-stacked LED chip, so that the vertically-stacked LED chip can selectively emit light of multiple colors.

[0165] Secondly, according to an embodiment of the present application, a manufacturing method of a vertically-stacked LED chip structure is also provided, which is used to manufacture the vertically-stacked LED chip structure of any one of the preceding embodiments of the present application. The flow chart of the manufacturing method of the vertically-stacked LED chip structure is shown in Figure 1 The manufacturing method comprises the following steps:

[0166] S1: providing a substrate 1;

[0167] S2: forming a first mirror layer 2 on the surface of the substrate 1;

[0168] S3: forming a third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises a color conversion layer 3; wherein the color conversion layer 3 is formed on the surface of the first mirror layer 2;

[0169] ​S4: forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure in sequence or only forming the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate 1, respectively as shown in Figure 5 or 10, or as shown in Figure 6 or 11.

[0170] The application provides a manufacturing method of a vertical stacked LED chip structure. The color conversion layer is formed in the third epitaxial light-emitting structure, so that the color conversion effect of the third epitaxial light-emitting structure is realized, and the first mirror layer is formed to reflect the light emitted by the third epitaxial light-emitting structure, thereby improving the light emission efficiency of the third epitaxial light-emitting structure, and further, the vertical stacked LED chip structure can have better light emission effect.

[0171] In an embodiment, in step S2, the first mirror layer 2 is formed by sputtering or evaporation.

[0172] In a specific embodiment, in step S3, the third epitaxial light-emitting structure comprises the following steps:

[0173] S31: forming the color conversion layer 3, the third epitaxial light-emitting structure stack, the second mirror layer 8 and the first bonding layer 9 in sequence on the first mirror layer 2 in a direction away from the substrate 1.

[0174] In an embodiment, in step S31, the color conversion layer 3 is formed by soaking or spin coating.

[0175] In an embodiment, in step S31, the third epitaxial light-emitting structure stack comprises the following steps:

[0176] S311: forming the first N-type GaN layer 4, the blue light-emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the first passivation layer 10 in sequence on the color conversion layer 3 in a direction away from the substrate 1; wherein the first N-type GaN layer 4 has a first step structure.

[0177] S312: forming the first N electrode 11 and the first P electrode 12.

[0178] The first N electrode 11 is formed on the first step structure; the second mirror layer 8 and the first adhesive layer 9 are formed on part of the first current spreading layer 7 to form a second step structure; the first P electrode 12 is formed on the second step structure; and the first passivation layer 10 covers the first step structure, and covers the sidewalls of the blue light emitting layer 5, the first P-type GaN layer 6, the first current spreading layer 7 and the second mirror layer 8, and covers the surface and sidewalls of the first adhesive layer 9, as shown in Figure 2

[0179] In one embodiment, the forming of the first N electrode 11 and the first P electrode 12 in step S312 specifically includes:

[0180] S3121: etching the first passivation layer 10 on part of the surface of the first step structure to form a first N electrode cavity, and etching the first passivation layer 10 on part of the surface of the second step structure to form a first P electrode cavity;

[0181] S3122: depositing a metal material in the first N electrode cavity and the first P electrode cavity to form the first N electrode 11 in the first N electrode cavity, and to form the first P electrode 12 in the first P electrode cavity.

[0182] The manufacturing method of the vertically stacked LED chip structure provided by the present application corresponds to the following two specific embodiments:

[0183] In the first specific embodiment, the forming of the first epitaxial light emitting structure on the third epitaxial light emitting structure in step S4 specifically includes steps S41-S43:

[0184] Step S41: providing a first growth substrate 21; and forming the first epitaxial light emitting structure on the first growth substrate 21;

[0185] Step S42: providing a first temporary substrate 20 with a bonding layer on the surface; and transferring the first epitaxial light emitting structure to the first temporary substrate 20; wherein one side of the first epitaxial light emitting structure, which is away from the first growth substrate 21, is formed on the first temporary substrate 20;

[0186] Step S43: peeling off the first growth substrate 21; bonding one side of the first epitaxial light emitting structure, which is away from the first temporary substrate 20, to the first adhesive layer 9; and removing the first temporary substrate 20; so as to form the first epitaxial light emitting structure on the third epitaxial light emitting structure, as shown in Figure 4

[0187] ​​In one embodiment, before the one side of the first epitaxial light-emitting structure, which is away from the first temporary substrate 20, is bonded on the first adhesive layer 9 in step S43, the method further comprises:

[0188] etching the first passivation layer 10 on the surface of the first adhesive layer 9 to form a first cavity; wherein the size of the first cavity is adapted to the size of the first epitaxial light-emitting structure;

[0189] wherein the one side of the first epitaxial light-emitting structure, which is away from the first temporary substrate 20, is bonded on the first adhesive layer 9 in the first cavity.

[0190] In one specific embodiment, the forming of the first epitaxial light-emitting structure on the first growth substrate 21 in step S41 comprises steps S411-S42:

[0191] S411: sequentially forming the second N-type GaN layer 13, the first light-emitting layer 14, the second P-type GaN layer 15, the second current spreading layer 16 and the second passivation layer 17 in a direction away from the first growth substrate 21; wherein the second N-type GaN layer 13 comprises the third step structure;

[0192] S412: forming the second N-electrode 19 and the second P-electrode 18;

[0193] wherein the second N-electrode 19 is formed on the third step structure; the second P-electrode 18 is formed on part of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the sidewalls of the first light-emitting layer 14, the second P-type GaN layer 15 and the surface and sidewalls of the second current spreading layer 16, as shown in Figure 3 .

[0194] In one embodiment, the forming of the second N-electrode 19 and the second P-electrode 18 in step S412 comprises:

[0195] S4121: etching the second passivation layer 17 on part of the surface of the third step structure to form a second N-electrode cavity; and etching the second passivation layer 17 on part of the top of the second current spreading layer 16 to form a second P-electrode cavity;

[0196] S4122: depositing a metal material in the second N-electrode cavity and the second P-electrode cavity to form the second N-electrode 19 in the second N-electrode cavity; and form the second P-electrode 18 in the second P-electrode cavity;

[0197] The first N electrode 11 and the second N electrode 19 constitute N electrodes of the vertically stacked LED chip structure; and the first P electrode 12 and the second P electrode 18 constitute P electrodes of the vertically stacked LED chip structure

[0198] In one embodiment, after the second N electrode 19 and the second P electrode 18 are formed in step S412, the method further comprises:

[0199] interconnecting the first N electrode 11 and the second N electrode 19 to form N electrodes of the vertically stacked LED chip structure, as shown in Figure 6 .

[0200] The technical scheme provided in this embodiment of the present application forms the third epitaxial light-emitting structure and the first epitaxial light-emitting structure in sequence on the substrate, so that one vertically stacked LED chip structure can cover two basic colors, thereby realizing the effect of selective light emission, and the introduction of the first reflector realizes a higher light emission rate.

[0201] In the second specific embodiment, the step S4 of sequentially forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in a direction away from the substrate 1 specifically comprises steps S41-S46:

[0202] S41: providing a second growth substrate 32; and forming the second epitaxial light-emitting structure on the second growth substrate 32;

[0203] S42: providing a second temporary substrate 31 with a bonding layer on a surface thereof; and transferring the second epitaxial light-emitting structure to the second temporary substrate 31; wherein one side of the second epitaxial light-emitting structure away from the second growth substrate 32 is formed on the second temporary substrate 31;

[0204] S43: peeling off the second growth substrate 32; bonding one side of the second epitaxial light-emitting structure away from the second temporary substrate 31 to the first adhesive layer 9; and removing the second temporary substrate 31; as shown in Figure 8 .

[0205] S44: providing a first growth substrate 21; and forming the first epitaxial light-emitting structure on the first growth substrate 21;

[0206] S45: providing a first temporary substrate 20 with a bonding layer on a surface thereof; and transferring the first epitaxial light-emitting structure to the first temporary substrate 20; wherein one side of the first epitaxial light-emitting structure away from the first growth substrate 21 is formed on the first temporary substrate 20;

[0207] S46: peeling off the first growth substrate 21, bonding the side of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 to the second epitaxial light-emitting structure, and removing the first temporary substrate 20; to sequentially form the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure, as shown in Figure 9

[0208] In one embodiment, before the step S43 of bonding the side of the second epitaxial light-emitting structure facing away from the second temporary substrate to the first adhesive layer 9, and removing the second temporary substrate 31, the method further comprises:

[0209] etching the first passivation layer 10 on the surface of the first adhesive layer 9 to form a first cavity; wherein the size of the first cavity is adapted to the size of the second epitaxial light-emitting structure;

[0210] wherein the side of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 is bonded to the first adhesive layer 9 in the first cavity.

[0211] In one embodiment, after the step S43 of bonding the side of the second epitaxial light-emitting structure facing away from the second temporary substrate to the first adhesive layer 9, and removing the second temporary substrate 31, the method further comprises:

[0212] forming the third mirror layer 26 and the second adhesive layer 27; the third mirror layer 26 and the second adhesive layer 27 are sequentially formed between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is adhered to the third mirror layer 26 through the second adhesive layer 27.

[0213] In one embodiment, before the step S46 of bonding the side of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 to the second epitaxial light-emitting structure, the method further comprises:

[0214] etching the third passivation layer 28 on the surface of the second adhesive layer 27 to form a second cavity; wherein the size of the second cavity is adapted to the size of the first epitaxial light-emitting structure;

[0215] wherein the side of the first epitaxial light-emitting structure facing away from the first temporary substrate 20 is bonded to the second adhesive layer 27 in the second cavity.

[0216] In one specific embodiment, the step S41 of forming the second epitaxial light-emitting structure on the second growth substrate 32 specifically comprises steps S411-S412:

[0217] ​S411: sequentially stacking the third N-type GaN layer 22, the second light emitting layer 23, the third P-type GaN layer 24, the third current spreading layer 25 and the third passivation layer 28 in a direction away from the substrate 1; wherein the third N-type GaN layer 22 comprises the fourth step structure;

[0218] S412: forming the third N electrode 29 and the third P electrode 30;

[0219] wherein the third N electrode 29 is formed on the fourth step structure; the second bonding layer 27 and the third mirror layer 26 are formed on part of the third current spreading layer 25 to form a fifth step structure; the third P electrode 30 is formed on the fifth step structure; the third passivation layer 28 covers the fourth step structure, and covers the side walls of the second light emitting layer 23, the third P-type GaN layer 24, the third current spreading layer 25 and the third mirror layer 26, and the surface and side walls of the second bonding layer 27, as shown in Figure 7

[0220] In an embodiment, in step S412, forming the third N electrode 29 and the third P electrode 30 specifically comprises steps S4121-S4122:

[0221] S4121: etching the third passivation layer 28 on part of the surface of the fourth step structure to form a third N electrode cavity; and etching the third passivation layer 28 on the surface of the fifth step structure to form a third P electrode cavity;

[0222] S4122: depositing a metal material in the third N electrode cavity and the third P electrode cavity to form the third N electrode 29 in the third N electrode cavity; and form the third P electrode 30 in the third P electrode cavity.

[0223] In another specific embodiment, step S44: forming the first epitaxial light emitting structure on the first growth substrate 21 specifically comprises steps S441-S442:

[0224] S441: sequentially stacking a second N-type GaN layer 13, a first light emitting layer 14, a second P-type GaN layer 15, a second current spreading layer 16 and a second passivation layer 17 in a direction away from the substrate 1; wherein the second N-type GaN layer 13 comprises a third step structure;

[0225] S442: forming a second N electrode 19 and a second P electrode 18;

[0226] ​The second N electrode 19 is formed on the third step structure; the second P electrode 18 is formed on part of the second current spreading layer 16; the second passivation layer 17 covers the third step structure, and covers the sidewall of the first light emitting layer 14, the second P type GaN layer 15 and the surface and sidewall of the second current spreading layer 16, as shown in Figure 3 .

[0227] In an embodiment, the step S442 specifically comprises the following steps S4421-S4422:

[0228] S4421: etching the second passivation layer 17 in part of the third step structure to form a second N electrode cavity; and etching the second passivation layer 17 on part of the top of the second current spreading layer 16 to form a second P electrode cavity;

[0229] S4422: depositing a metal material in the second N electrode cavity and the second P electrode cavity to form the second N electrode 19 in the second N electrode cavity; and form the second P electrode 18 in the second P electrode cavity;

[0230] The first N electrode 11, the second N electrode 19 and the third N electrode 29 constitute the N electrode of the vertically stacked LED chip structure; the first P electrode 12, the second P electrode 18 and the third P electrode 30 constitute the P electrode of the vertically stacked LED chip structure, as shown in Figure 10 .

[0231] In an embodiment, after the step S412 of forming the third N electrode 29 and the third P electrode 30, and the step S442 of forming the second N electrode 19 and the second P electrode 18, the method further comprises:

[0232] Interconnecting the first N electrode 11, the second N electrode 19 and the third N electrode 29 to form the N electrode of the vertically stacked LED chip, as shown in Figure 11 .

[0233] The technical scheme provided in the embodiment of the present application forms the third epitaxial light emitting structure, the second epitaxial light emitting structure and the first epitaxial light emitting structure stacked in sequence on the substrate, so that a vertically stacked LED chip structure can cover full colors, and the vertically stacked LED chip can selectively emit light of multiple colors; the third epitaxial light emitting structure adopts color conversion, so that the color conversion effect of the third epitaxial light emitting structure is realized; meanwhile, the first reflector layer is formed on the opposite side of the light emitting surface of the vertically stacked LED chip, so that the light emitting efficiency and light emitting brightness are improved.

[0234] In addition, according to an embodiment of the present application, there is also provided an electronic device comprising the vertically stacked LED chip structure according to the aforementioned embodiments of the present application.

[0235] Finally, according to an embodiment of the present application, there is also provided a manufacturing method of an electronic device, characterized in that it comprises the manufacturing method of the vertically stacked LED chip structure according to the aforementioned embodiments of the present application.

[0236] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit the present application; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A vertically stacked LED chip structure, characterized by, The vertical stacked LED chip structure comprises: a substrate; a first epitaxial light-emitting structure and a second epitaxial light-emitting structure, or only a first epitaxial light-emitting structure, wherein the first epitaxial light-emitting structure and the second epitaxial light-emitting structure do not comprise a color conversion layer; a third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises a color conversion layer; wherein the third epitaxial light-emitting structure, the second epitaxial light-emitting structure, and the first epitaxial light-emitting structure, or the third epitaxial light-emitting structure and the first epitaxial light-emitting structure, are sequentially stacked on the substrate in a direction away from the substrate; a first mirror layer formed between the substrate and the color conversion layer, for reflecting light emitted by the third epitaxial light-emitting structure to a light-emitting surface of the vertical stacked LED chip structure.

2. The vertically stacked LED chip structure of claim 1, wherein, The first mirror layer is a DBR mirror or a metal mirror.

3. The vertically stacked LED chip structure of claim 2, wherein, The third epitaxial light-emitting structure further comprises: a third epitaxial light-emitting structure stack, a second mirror layer, and a first bonding layer; the color conversion layer, the third epitaxial light-emitting structure stack, the second mirror layer, and the first bonding layer are sequentially stacked on the substrate in a direction away from the substrate; wherein the second mirror layer and the first bonding layer are used for transmitting light emitted by the third epitaxial light-emitting structure.

4. The vertically stacked LED chip structure of claim 3, wherein, The third epitaxial light-emitting structure stack comprises: a first N-type GaN layer, a blue light-emitting layer, a first P-type GaN layer, a first current spreading layer, and a first passivation layer, which are sequentially stacked in a direction away from the substrate; wherein the first N-type GaN layer comprises a first step structure; a first N electrode and a first P electrode; wherein the first N electrode is formed on the first step structure; the first bonding layer and the second mirror layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; and the first passivation layer covers the first step structure, and covers the side walls of the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer, and the second mirror layer, and the surface and side walls of the first bonding layer.

5. The vertically stacked LED chip structure of claim 4, wherein, When the vertical stacked LED chip structure only comprises a first epitaxial light-emitting structure and the third epitaxial light-emitting structure, the first epitaxial light-emitting structure is formed on the first bonding layer; wherein the second mirror layer is also used for reflecting light emitted by the first epitaxial light-emitting structure.

6. The vertically stacked LED chip structure of claim 5, wherein, The color conversion layer is a red color conversion layer or a green color conversion layer.

7. The vertically stacked LED chip structure of claim 4, wherein, When the vertical stacked LED chip structure comprises the third epitaxial light-emitting structure, the second epitaxial light-emitting structure, and the first epitaxial light-emitting structure, the vertical stacked LED chip structure further comprises: a third mirror layer and a second bonding layer; the third mirror layer and the second bonding layer are sequentially formed on the second epitaxial light-emitting structure in a direction away from the substrate; The first epitaxial light-emitting structure is formed on the second adhesive layer; the second epitaxial light-emitting structure is formed on the first adhesive layer; the third mirror layer and the second adhesive layer are used for transmitting light emitted by the second epitaxial light-emitting structure and the third epitaxial light-emitting structure and reflecting light emitted by the first epitaxial light-emitting structure; and the second mirror layer is further used for reflecting light emitted by the first epitaxial light-emitting structure and the second epitaxial light-emitting structure.

8. The vertically stacked LED chip structure of claim 7, wherein, The second mirror layer and the third mirror layer are DBR mirrors.

9. The vertically stacked LED chip structure of claim 8, wherein, The color conversion layer is a red color conversion layer.

10. A method of fabricating a vertically stacked LED chip structure, the method comprising: forming a first LED chip on a substrate; forming a second LED chip on the first LED chip; and forming a third LED chip on the second LED chip. A method for manufacturing the vertically-stacked LED chip structure of any one of claims 1-9 comprises: providing a substrate; forming the first mirror layer on a surface of the substrate; forming the third epitaxial light-emitting structure; the third epitaxial light-emitting structure comprises the color conversion layer; wherein the color conversion layer is formed on a surface of the first mirror layer; forming the second epitaxial light-emitting structure and the first epitaxial light-emitting structure on the third epitaxial light-emitting structure in sequence in a direction away from the substrate, or only forming the first epitaxial light-emitting structure.

11. The method of claim 10, wherein the method further comprises: The first mirror layer is formed by sputtering or evaporation.

12. The method of claim 11, wherein the method further comprises: The third epitaxial light-emitting structure is formed by: forming the color conversion layer, the third epitaxial light-emitting structure, the second mirror layer and the first adhesive layer on the first mirror layer in sequence in a direction away from the substrate.

13. The method of claim 12, wherein the method further comprises: The first epitaxial light-emitting structure is formed on the third epitaxial light-emitting structure by: providing a first growth substrate; and forming the first epitaxial light-emitting structure on the first growth substrate; providing a first temporary substrate with a bonding layer on a surface thereof; and transferring the first epitaxial light-emitting structure to the first temporary substrate; wherein a surface of the first epitaxial light-emitting structure away from the first growth substrate is formed on the first temporary substrate; peeling off the first growth substrate; bonding a surface of the first epitaxial light-emitting structure away from the first temporary substrate to the first adhesive layer; and removing the first temporary substrate; so as to form the first epitaxial light-emitting structure on the third epitaxial light-emitting structure.

14. The method of claim 12, wherein the method further comprises: The second epitaxial light-emitting structure and the first epitaxial light-emitting structure are formed on the third epitaxial light-emitting structure in sequence in a direction away from the substrate by: providing a second growth substrate; and forming the second epitaxial light-emitting structure on the second growth substrate; providing a second temporary substrate with a bonding layer on a surface thereof; and transferring the second epitaxial light-emitting structure to the second temporary substrate; wherein a surface of the second epitaxial light-emitting structure away from the second growth substrate is formed on the second temporary substrate; peeling off the second growth substrate; bonding a surface of the second epitaxial light-emitting structure away from the second temporary substrate to the first adhesive layer; and removing the second temporary substrate; providing a first growth substrate; and forming the first epitaxial light-emitting structure on the first growth substrate; A first temporary substrate with a bonding layer on a surface is provided; and the first epitaxial light-emitting structure is transferred onto the first temporary substrate; wherein a side of the first epitaxial light-emitting structure away from the first growth substrate is formed on the first temporary substrate; The first growth substrate is peeled off, a side of the first epitaxial light-emitting structure away from the first temporary substrate is bonded on the second epitaxial light-emitting structure, and the first temporary substrate is removed; so that the second epitaxial light-emitting structure and the first epitaxial light-emitting structure are sequentially formed on the third epitaxial light-emitting structure.

15. The method of claim 14, wherein the method further comprises: After bonding a side of the second epitaxial light-emitting structure away from the second temporary substrate on the first bonding layer and removing the second temporary substrate, the method further comprises: A third mirror layer and a second bonding layer are formed; the third mirror layer and the second bonding layer are sequentially formed between the second epitaxial light-emitting structure and the first epitaxial light-emitting structure, so that the first epitaxial light-emitting structure is bonded on the third mirror layer through the second bonding layer.

16. The method of claim 13 or 15, wherein the method further comprises: The color conversion layer is formed by immersion or spin coating.

17. The method of claim 16, wherein the method further comprises: The third epitaxial light-emitting structure stack is formed by sequentially forming a first N-type GaN layer, a blue light-emitting layer, a first P-type GaN layer, a first current spreading layer, and a first passivation layer on the color conversion layer in a direction away from the substrate; wherein the first N-type GaN layer has a first step structure. A first N electrode and a first P electrode are formed. The first N electrode is formed on the first step structure; the second mirror layer and the first bonding layer are formed on part of the first current spreading layer to form a second step structure; the first P electrode is formed on the second step structure; and the first passivation layer covers the first step structure, and covers the side walls of the blue light-emitting layer, the first P-type GaN layer, the first current spreading layer, and the second mirror layer, and the surface and side walls of the first bonding layer. The vertical stacked LED chip structure of any one of claims 1-9.

18. An electronic device, comprising: The method for manufacturing the vertical stacked LED chip structure of any one of claims 10-17.

19. A method of manufacturing an electronic device, comprising: ​

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