Semiconductor device, display device, photoelectric conversion device, and electronic device
By adjusting the spacing of the semiconductor chip terminal groups, the problem of poor resin fluidity in traditional flip chip installation is solved, the reliability and uniformity of electrical connection are improved, and the effective connection between the semiconductor chip and the substrate is ensured.
Patent Information
- Application Number
- CN202410893603.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-03-25
- Filing Date
- 2024-07-04
- Publication Date
- 2025-01-14
AI Technical Summary
In semiconductor devices, the traditional flip chip installation method is prone to defects in the electrical connection between the electrode and the terminal due to the poor fluidity of the thermosetting resin. Especially in the case of multiple rows of terminal groups, it is difficult for the resin to flow and roll out evenly. Impacts the reliability of the connection.
By adjusting the terminal spacing in the terminal group of the semiconductor chip, the spacing of the central portion of the terminal group is wider than the spacing of the end portion of the terminal group, thereby improving the flowability of the resin in the column direction, ensuring uniform thickness and good electrical power of the resin connect.
The fluidity of the resin and the reliability of the electrical connection are effectively improved, ensuring that the semiconductor chip terminals can be satisfactorily connected to the electrodes of the semiconductor substrate, and reducing the occurrence of electrical connection defects.
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Figure CN119317288A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor device, a display device, a photoelectric conversion device and an electronic device. Background Art
[0002] Electronic device products need to become miniaturized, lightweight and provide higher performance, whereby the number of external output terminals of such devices is rapidly increasing. The adaptation to this increase in the number of external output terminals may translate into larger electronic device sizes, because conventional wire bonding connections are limited in narrowing the pitch of the connection terminals. Therefore, the technology of flip-chip mounting semiconductor chips to each other has attracted much attention. In flip-chip mounting, pads of reduced size are connected to each other via connecting portions such as bumps in a semiconductor process; thus, the pitch of the external output terminals can be made narrower than conventional wire bonding connections. The bonding methods of flip-chip mounting include ultrasonic bonding and solder bonding. In order to produce display devices such as organic EL, for the purpose of suppressing component degradation caused by heat during the bonding process, the bonding method generally adopts a method using ACF (anisotropic conductive film), which allows bonding at a lower temperature.
[0003] In a display device, for example, semiconductor chip terminals are mounted on electrodes of a semiconductor substrate by flip-chip mounting; however, electrical connection failure (disconnection or high resistance) may occur between the electrodes of the semiconductor substrate and the terminals of the semiconductor chip.
[0004] The ACF film is a film in which conductive particles are dispersed in a thermosetting resin. In a bonding method using ACF as a bonding member, heat and pressure are applied to a member between an electrode and a terminal on which the ACF is arranged, thereby inducing thermal hardening of the thermosetting resin while the conductive particles are sandwiched between the electrode and the terminal. Thus, an electrical connection between the electrode and the terminal is completed. In more detail, the thermosetting resin flattened by heat and pressure is pushed out of the semiconductor chip; therefore, the thermosetting resin is thinned and the conductive particles are sandwiched between the electrode and the terminal. Thus, an electrical connection between the electrode and the terminal is completed.
[0005] In the case of a terminal array (or an electrode array corresponding to the terminal array) having a plurality of rows of terminal groups (arranged with short spacing between the terminals), the fluidity of the thermosetting resin in the column direction is poor due to the narrow spacing between the terminals. Therefore, the thermosetting resin tends to be retained in the central portion of the semiconductor chip, so it is difficult to reduce the thickness of the thermosetting resin even when heat and pressure are applied, and electrical connection defects are likely to occur between the electrodes and the terminals. Because the fluidity of the thermosetting resin in the column direction is poor, the thermosetting resin must be pushed out in the row direction; however, in the case where the semiconductor chip is long in the row direction, it is difficult to push the thermosetting resin in the row direction, and electrical connection defects between the electrodes and the terminals are particularly likely to occur.
[0006] In ultrasonic bonding, adhesives such as epoxy resins or acrylic resins and thermosetting films such as NCF (non-conductive adhesive film) can be used for the purpose of enhancing bonding strength and reliability. As with the bonding using ACF above, in this case, the resin fluidity is poor in the central part of the semiconductor chip, and there is a possibility that electrical connections between electrodes and terminals may be defective.
[0007] In the technology disclosed in Japanese Patent Application Laid-Open No. 2016-127259, dummy bumps are arranged between two separate bump groups. In the technology disclosed in Japanese Patent Application Laid-Open No. 2004-356566, a plurality of bumps are arranged in a manner surrounding the central portion of a semiconductor chip.
[0008] In the structure disclosed in Japanese Patent Publication No. 2016-127259, the resin fluidity cannot be improved, and the electrical connection between the electrode and the terminal may be defective. In the structure disclosed in Japanese Patent Publication No. 2004-356566, the resin has nowhere to escape, so the resin fluidity is very poor, and the electrical connection between the electrode and the terminal is very likely to be defective. Summary of the invention
[0009] The present invention has been made in view of the above problems, and provides a semiconductor device in which terminals of a semiconductor chip are satisfactorily mounted on electrodes of a semiconductor substrate in a flip-chip mounting manner.
[0010] A semiconductor device according to the present invention includes: a semiconductor chip, in which a plurality of terminal groups including a plurality of terminals arranged along a first direction are arranged along a second direction intersecting the first direction, wherein at least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on the opposite side of the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on the opposite side of the second terminal in the first direction; a spacing between the first terminal and the second terminal in the first direction is wider than a spacing between the second terminal and the third terminal in the first direction; and a spacing between the second terminal and the third terminal in the first direction is wider than a spacing between the third terminal and the fourth terminal in the first direction.
[0011] Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1A is a schematic diagram of a semiconductor device according to Embodiments 1 to 7;
[0013] Figure 1B is a cross-sectional view of a semiconductor device according to Embodiments 1 to 7;
[0014] Figure 2 It is a plan view of a traditional semiconductor chip;
[0015] FIG. 3A to FIG. 3F is an explanatory diagram of a method for producing a semiconductor device according to Embodiments 1 to 7;
[0016] Figure 4A , Figure 4C and Figure 4D is a plan view of a semiconductor chip according to Embodiment 1;
[0017] Figure 4B is a cross-sectional view of a semiconductor chip according to Embodiment 1;
[0018] Figure 5A , Figure 5C and Figure 5D is a plan view of a semiconductor chip according to Embodiment 2;
[0019] Figure 5B is a cross-sectional view of a semiconductor chip according to Embodiment 2;
[0020] FIG. 6A to FIG. 6C is a plan view of a semiconductor chip according to Embodiment 3;
[0021] 7A to 7C is a plan view of a semiconductor chip according to Embodiment 4;
[0022] FIG. 8A to FIG. 8C is a plan view of a semiconductor chip according to Embodiment 5;
[0023] 9A to 9C is a plan view of a semiconductor chip according to Embodiment 6;
[0024] FIG. 10A to FIG. 10C is a plan view of a semiconductor chip according to Embodiment 7;
[0025] Fig.11 is a schematic diagram illustrating a display device according to Embodiment 8;
[0026] Fig. 12A is a schematic diagram illustrating an imaging device according to Embodiment 8;
[0027] Fig. 12B is a schematic diagram illustrating an electronic device according to Embodiment 8;
[0028] Fig.13A and Fig. 13B is a schematic diagram illustrating a display device according to Embodiment 8;
[0029] Fig.14A is a schematic diagram illustrating a lighting device according to Embodiment 8;
[0030] Fig. 14B is a schematic diagram illustrating a moving object according to Embodiment 8; and
[0031] Fig.15A and Fig. 15B is a schematic diagram illustrating a wearable device according to embodiment 8. DETAILED DESCRIPTION
[0032] Embodiments for implementing the present invention will be described below with reference to the accompanying drawings. In the following description and drawings, structures shared between the drawings are represented by shared reference numerals. Therefore, shared structures will be described while alternately citing multiple drawings; and descriptions related to structures represented by shared reference numerals may be omitted as appropriate.
[0033] Figure 1A1 is a plan view of the semiconductor device 800 when viewed from above. The configuration in the plan view here represents a configuration having the semiconductor device 800 when viewed from a direction perpendicular to the main surface of the semiconductor substrate 100 (relative to the normal direction of the main surface). A given component overlapping another component can be seen through in the plan view here. The opposing substrate 200 overlaps with the semiconductor substrate 100 in a plan view of the main surface of the semiconductor substrate 100. The direction (facing direction) in which the opposing substrate 200 faces the semiconductor substrate 100 is a direction perpendicular to the main surface of the semiconductor substrate 100 (relative to the normal direction of the main surface). The semiconductor substrate 100 has an effective element area AA and a peripheral area PA positioned around the effective element area AA, in which an effective element is arranged on the first main surface of the substrate 10. The effective element area AA is a rectangle with a diagonal length of, for example, 5 mm to 50 mm. The peripheral area PA may include a peripheral loop area (not shown), in which a peripheral loop is arranged. In the case of a display device, for example, the peripheral circuit includes, for example, a driving circuit for driving effective pixels and a processing circuit (for example, a DAC (digital-to-analog conversion circuit)) for processing signals input to the effective pixels. The peripheral area PA is positioned outside the effective element area AA, and may include an ineffective element area (not shown) in which ineffective elements are provided. Ineffective elements are elements that do not function as effective elements here, and may be, for example, dummy elements, reference elements, test elements, or monitor elements. A resin layer 150 connecting the opposing substrate 200 and the semiconductor substrate 100 is provided in the peripheral area PA. The term connection may also be interpreted as bonding or combining. In the peripheral area PA, the wiring board 400 and the semiconductor chip 300 are electrically connected to the semiconductor substrate 100.
[0034] Figure 1B yes Figure 1AXX' cross-sectional view of a semiconductor device 800. The semiconductor device 800 includes a semiconductor substrate 100, an opposing substrate 200, a resin layer 150, a wiring board 400 and a semiconductor chip 300. The opposing substrate 200 is arranged to face the semiconductor substrate 100 across a gap G between the opposing substrate 200 and the semiconductor substrate 100. The resin layer 150 connects the opposing substrate 200 and the semiconductor substrate 100. The wiring board 400 is electrically connected to the semiconductor substrate 100 via the electrode portion 31 and the connecting member 600. The semiconductor chip 300 is electrically connected to the semiconductor substrate 100 via the electrode portions 32, 33 and the connecting member 500. The semiconductor element 20, the wiring layer 30, the interlayer insulating layer 40 and the functional element 50 are arranged in the effective element area AA of the semiconductor substrate 100. A peripheral loop (not shown) is arranged in the peripheral area PA of the semiconductor substrate 100. Conductive members such as ACF (anisotropic conductive adhesive film), NCF (non-conductive adhesive film), epoxy resin, acrylic resin, etc. are used in the connection members 500, 600. The counter substrate 200 is arranged to face the semiconductor substrate 100 in a manner covering the entirety of the effective element area AA and part of the peripheral area PA. The resin layer 150 provided in the peripheral area PA of the semiconductor substrate 100 connects the semiconductor substrate 100 and the counter substrate 200.
[0035] A gap G is provided between the semiconductor substrate 100 and the counter substrate 200. In the case where it is necessary to suppress the intrusion of moisture into the functional element 50, the gap G may be filled with a resin. The filling resin may be the same as or different from the resin of the resin layer 150. Any transparent resin such as an acrylic resin or an epoxy resin may be used as the filling resin.
[0036] The substrate 10 is made of a semiconductor such as single crystal silicon. The semiconductor element 20 is a transistor or a diode at least partially disposed in the substrate 10. The wiring layer 30 includes a multilayer wiring such as an aluminum layer or a copper layer and a plug such as a via plug or a contact plug. The electrode portions 31, 32, 33 may be formed in the same layer as the electrode portion of the wiring layer 30.
[0037] The interlayer insulating layer 40 includes a plurality of interlayer insulating layers and is composed of, for example, a silicon oxide layer, a silicon nitride layer, and a silicon carbide layer. Silicon oxynitride and silicon carbonitride contain nitrogen and silicon as main elements and can therefore be regarded as types of silicon nitride. The functional element 50 is disposed in the effective element area AA of the semiconductor substrate 100. The functional element 50 is a display element or a photoelectric conversion element; in the case of a display element, the functional element 50 is an EL element in an ELD (electroluminescent display), a liquid crystal element in an LCD (liquid crystal display), or a reflective element in a DMD (digital mirror device).
[0038] The functional element 50 is connected to the wiring layer 30 through a via (not shown) provided in the interlayer insulating layer 40, and is electrically connected to the semiconductor element 20 via the wiring layer 30. For example, a passivation film, a color filter layer, and a lens structure for suppressing the intrusion of moisture, oxygen, etc. may be provided on the functional element 50.
[0039] Thus, as described above, the semiconductor substrate 100 is constructed so that the resin layer 150 is arranged in the peripheral area PA of the semiconductor substrate 100, and the counter substrate 200 is attached to the semiconductor substrate 100 via the resin layer 150. Any light-transmitting material such as glass or acrylic can be used in the counter substrate 200; alkali-free glass is appropriately used here. The thickness of the counter substrate 200 is, for example, 0.7 mm. Preferably, an anti-reflection film (AR film for short) is formed on either or both main surfaces of the counter substrate 200. In the case where the functional element 50 is a photoelectric conversion element, the formation of the AR film causes the incident efficiency of light on the functional element 50 to be enhanced; in the case where the functional element 50 is a display element, the formation of the AR film causes the efficiency of extracting light from the functional element 50 to be enhanced.
[0040] The semiconductor chip 300 is connected to the electrode portions 32 , 33 arranged in the peripheral area PA of the semiconductor substrate 100 via the connection member 500 , and the wiring board 400 is connected to the electrode portion 31 via the connection member 600 .
[0041] The semiconductor chip 300 is a semiconductor chip provided with a driving circuit, and the semiconductor chip 300 is connected to terminals 451 and 452 such as Au bumps or Cu bumps provided on the surface of the semiconductor substrate 100 . Figure 2 is a plan view of the semiconductor chip 300 when viewed from above. Figure 2The conventional configuration (basic configuration) is illustrated; the configuration according to the embodiment of the present invention is described next. Terminal 451 is an output terminal, and terminal 452 is an input terminal. There are usually many output terminals; here, the desired number of output terminals is configured by reducing the size of the output terminal or by increasing the number of rows of the output terminal (the number of output terminal groups arranged along the row direction, each group including a plurality of output terminals). In a configuration of about 2000 to 10000 output terminals, the length of one side of each output terminal is usually about 10μm to 100μm, and the height of the output terminal is about 3μm to 50μm. The spacing between the output terminals is about 10μm to 100μm, and the number of rows of the output terminals (the number of output terminal groups) is about 3 to 20 rows. The electrode portion 33 includes a plurality of electrodes to which the output terminal 451 is respectively connected via a connecting member 500. The number of input terminals is usually smaller than the number of output terminals, so the input terminals are required to have low resistance; therefore, the size of the input terminals is preferably large. In a configuration of about 300 to 2000 input terminals, generally, the length of one side of the input terminal is about 10 μm to 200 μm, and the height of the input terminal is about 3 μm to 50 μm. The spacing between the input terminals is about 10 μm to 50 μm, and the number of rows of input terminals (the number of input terminal groups including a plurality of input terminals at different positions in the row direction) is about 1 to 5 rows. The electrode portion 32 includes a plurality of electrodes to which the plurality of input terminals 452 are respectively connected via the connecting member 500.
[0042] The wiring board 400 is a flexible circuit board such as a glass epoxy board or a polyimide film on which a wiring pattern is provided, and terminals 453 in the form of Au bumps or Cu bumps are provided on the surface of the wiring board 400 connected to the semiconductor substrate 100 .
[0043] The connecting member 500 of the semiconductor substrate 100 and the semiconductor chip 300 and the connecting member 600 of the semiconductor substrate 100 and the wiring board 400 are both composed of ACF, NCF, epoxy resin, acrylic resin, etc. For example, by thermal compression or ultrasonic compression, the electrodes of the semiconductor substrate 100 and the terminals of the semiconductor chip 300 are electrically connected to each other, and the electrodes of the semiconductor substrate 100 and the terminals of the wiring board 400 are electrically connected to each other. ACF here is a film in which conductive particles are dispersed in a thermosetting resin, and can therefore be interpreted as an anisotropic conductive resin. Epoxy resin or acrylic resin is used as a thermosetting resin. The size and number of the conductive particles are selected according to the size of the terminal; for example, in a general ACF, the size (diameter) of the conductive particles is about 1 μm to 50 μm, and the number (area density) of the conductive particles is, for example, about 10,000 to 100,000 particles / mm 2The connection strength and reliability between electrodes and terminals can be improved by using NCF, epoxy resin, or acrylic resin.
[0044] Next, we will refer to Figures 3A to 3F A method for producing an organic EL display device as an example of the semiconductor device 800 is described.
[0045] Figure 3A 1 is a cross-sectional view at a time point when the production process of the semiconductor substrate 100 is completed. The semiconductor substrate 100 has a substrate 10. For example, silicon can be used in the substrate 10. A semiconductor element 20 such as a transistor is formed on the main surface of the substrate 10. An interlayer insulating layer 40 is formed on the main surface of the substrate 10 on which the semiconductor element 20 is formed. Silicon oxide, silicon nitride, silicon carbide, etc. are used in the interlayer insulating layer 40. A contact plug (not shown) electrically connected to the semiconductor element 20 is arranged in the interlayer insulating layer 40. The contact plug is filled with a conductive member such as tungsten. A wiring layer 30 electrically connected to the semiconductor element 20 via the contact plug is arranged inside the interlayer insulating layer 40. Metal materials such as aluminum or copper are used in the wiring layer 30. For the purpose of suppressing the diffusion of metal into the interlayer insulating layer 40, a barrier metal such as Ti, Ta, TiN or TaN can be provided at the interface between the interlayer insulating layer 40 and the wiring layer 30. In the peripheral area PA of the substrate 10, the electrode portions 31, 32, 33 are formed in the same layer as any wiring layer 30. Openings (not shown) are provided above the electrode portions 31, 32, 33 (the interlayer insulating layer 40 has been removed from the openings) so that the electrode portions 31, 32, 33 are exposed through the openings.
[0046] In the effective element area AA, an organic EL element as a functional element 50 is arranged on the interlayer insulating layer 40. The functional element 50 is electrically connected to the wiring layer 30 through a through hole (not shown). The functional element 50 includes a pixel electrode, an opposing electrode, and an organic light-emitting layer (all not shown) arranged between the pixel electrode and the opposing electrode. For the purpose of facilitating the injection and transportation of holes from the pixel electrode, a hole injection layer and a hole transport layer can be formed between the organic light-emitting layer and the pixel electrode. For the purpose of facilitating the injection and transportation of electrons from the opposing electrode, an electron transport layer and an electron injection layer can be formed between the organic light-emitting layer and the opposing electrode. A sealed passivation film (not shown) for suppressing moisture penetration can be formed on the functional element 50. A color filter layer and a lens structure for increasing light extraction efficiency can be provided on the passivation film.
[0047] Figure 3B 3 is a cross-sectional view of the semiconductor chip 300. For example, by a semiconductor process, electric wiring is formed on a semiconductor substrate, and open pads for electrical connection are formed, and Au or Cu terminals 451 and 452 are formed on the open pads, for example, by electroplating.
[0048] like Figure 3C As shown, the connecting member 500 is attached to the electrode portions 32, 33 of the semiconductor substrate 100 in the following manner: so that the terminals 451, 452 (multiple terminals) of the semiconductor chip 300 are thermally pressed to the electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100 through the connecting member 500. The terminals 451, 452 (multiple terminals) of the semiconductor chip 300 thus become electrically connected to the electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100. The thermal pressing temperature is preferably a temperature of, for example, 100°C, at which the functional element 50 does not deteriorate due to heat. For example, the connecting member is ACF, and conductive particles are contained in the epoxy resin adhesive. The terminals 451, 452 (multiple terminals) of the semiconductor chip 300 are electrically connected to the electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100 through the conductive particles. The connection method involved is not particularly limited, and may be ultrasonic pressing. Here, NCF, epoxy resin, or acrylic resin may be used as the connecting member 500; this allows the connection strength and reliability between the electrode and the terminal to be improved.
[0049] like Figure 3D As shown, the terminal 453 (multiple terminals) of the wiring board 400 is thermally pressed or ultrasonically pressed to the electrode portion 31 (multiple electrodes) of the semiconductor substrate 100 via the connecting member 600. The terminal 453 (multiple terminals) of the wiring board 400 thus becomes electrically connected to the electrode portion 31 (multiple electrodes) of the semiconductor substrate 100. The wiring board 400 is, for example, a flexible circuit board in which a copper wiring pattern is formed on a polyimide substrate. The connecting member 600 (bottom filling resin) can be omitted; however, by providing the connecting member 600, the reliability and connection strength between the electrode and the terminal can be improved.
[0050] like Figure 3E As shown, the resin layer 150 is formed by coating on the peripheral area PA of the semiconductor substrate 100. The resin layer 150 is applied in a manner that surrounds the effective element area AA. The resin layer 150 needs to be formed to a thickness that prevents the semiconductor substrate 100 and the opposing substrate 200 from contacting each other; the resin layer 150 is preferably formed of a resin with a viscosity of 10000 mPa·s or more. A resin obtained by kneading spacers in the form of glass beads or resin beads of a predetermined size can be used in the resin layer 150. In this way, the thickness of the resin layer 150 can be easily controlled. Any resin material such as epoxy resin or acrylic resin is used in the resin layer 150. For example, the resin layer 150 is formed by applying an epoxy resin mixed with 10μm to 100μm resin beads, preferably 30μm resin beads, according to a dispensing method.
[0051] like Figure 3FAs shown, an opposing substrate 200 is arranged on the resin layer 150 in a manner facing the main surface of the semiconductor substrate 100, thereby curing the resin layer 150. When the opposing substrate 200 is arranged on the resin layer 150, the resin layer 150 spreads horizontally (left and right in the figure) due to the load of the opposing substrate 200. Therefore, the load of the opposing substrate 200 is controlled so that the resin layer 150 does not wet and spread on the effective element area AA of the semiconductor substrate 100. For example, the resin layer 150 is cured by ultraviolet rays. Any transparent substrate such as glass or acrylic can be used as the opposing substrate 200; for example, alkali-free glass can be used here. The thickness of the cured resin layer 150 is, for example, 10μm to 100μm. As a result of the above steps, the organic EL display device is completed.
[0052] Implementation Method 1
[0053] Next, embodiment 1 will be described. In embodiment 1, the terminal group of the semiconductor chip 300 includes one or more specific terminal groups. In the specific terminal group, one terminal is defined as a first terminal, the terminal adjacent to the first terminal from the right side is defined as a second terminal, and the terminal adjacent to the second terminal from the right side is defined as a third terminal. The spacing between the first terminal and the second terminal in the row direction is set to be wider than the spacing between the second terminal and the third terminal in the row direction. Specifically, the spacing between the terminals at the central portion in the row direction of the specific terminal group is set to be wider than the spacing between the terminals at the end portions in the row direction of the specific terminal group. Therefore, the fluidity of the resin flowing from the central portion of the semiconductor chip 300 in the column direction (direction perpendicular to the row direction) is improved. Therefore, the thickness of the resin can be easily made uniform in the plane of the semiconductor chip 300 having a plurality of terminals, and similarly, the terminals of the semiconductor chip 300 can be satisfactorily connected to the electrodes of the semiconductor substrate 100. Preferably, the spacing between the terminals at the central portion of the specific terminal group is, for example, 50 μm to 200 μm.
[0054] Figure 4A , Figure 4C and Figure 4D is a plan view of the semiconductor chip 300 according to Embodiment 1 when viewed from above. Figure 4B is the semiconductor substrate 100 and the output terminal 451 when viewed from the side. Figure 4A 8 is a cross-sectional view of a semiconductor device 800 in which semiconductor chips 300 are connected to each other.
[0055] exist Figure 4AIn the figure, the spacing between the output terminals 451 at the center of the output terminal group in the row direction (left-right direction in the figure) is wider than the spacing between the output terminals 451 at the ends of the output terminal group in the row direction. The spacing between the output terminals 451 at the center of the output terminal group is equal spacing, and the spacing between the output terminals 451 at the ends of the output terminal group is also equal spacing. Figure 4C , the spacing between the input terminals 452 at the center of the input terminal group in the row direction is wider than the spacing between the input terminals 452 at the ends of the input terminal group in the row direction. The spacing between the input terminals 452 at the center of the input terminal group is equal spacing, and the spacing between the input terminals 452 at the ends of the input terminal group is also equal spacing.
[0056] exist Figure 4D In the embodiment, the spacing between the output terminals 451 at the center of the output terminal group is wider than the spacing between the output terminals 451 at the ends of the output terminal group. The spacing between the output terminals 451 at the center of the output terminal group is equal spacing, and the spacing between the output terminals 451 at the ends of the output terminal group is also equal spacing. Figure 4D In the embodiment, the spacing between the input terminals 452 at the center of the input terminal group is wider than the spacing between the input terminals 452 at the ends of the input terminal group. The spacing between the input terminals 452 at the center of the input terminal group is equal, and the spacing between the input terminals 452 at the ends of the input terminal group is also equal. By adjusting both the spacing between the output terminals 451 of the output terminal group and the spacing between the input terminals 452 of the input terminal group, it is expected that the ratio Figure 4A and Figure 4C The spacing between the output terminals 451 at the central portion of the output terminal group may be equal to or different from the spacing between the input terminals 452 at the central portion of the input terminal group. The spacing between the output terminals 451 at the ends of the output terminal group may be equal to or different from the spacing between the input terminals 452 at the ends of the input terminal group.
[0057] Implementation Method 2
[0058] Next, embodiment 2 will be described. In the specific terminal group in embodiment 2, one terminal is defined as a first terminal, a terminal adjacent to the first terminal from the right is defined as a second terminal, and a terminal adjacent to the second terminal from the right is defined as a third terminal. The terminal adjacent to the third terminal from the right is defined as a fourth terminal. The spacing between the first terminal and the second terminal in the row direction is wider than the spacing between the second terminal and the third terminal in the row direction, and the spacing between the second terminal and the third terminal in the row direction is wider than the spacing between the third terminal and the fourth terminal in the row direction. For example, the spacing between the terminals of the specific terminal group (the spacing between two mutually adjacent terminals in the row direction) gradually widens as it gradually approaches the center of the row direction of the specific terminal group. Therefore, relative to embodiment 1, the fluidity of the resin flowing from the central part of the semiconductor chip 300 in the column direction is improved. Preferably, the spacing between the terminals of the specific terminal group gradually widens, for example, in the range of 1 μm to 200 μm as it gradually approaches the center of the specific terminal group. In the entire specific terminal group, the spacing between the terminals of the specific terminal group can be set to widen or not widen as it gradually approaches the center of the specific terminal group. Alternatively, only for the central portion of the specific terminal group, the intervals between the terminals of the specific terminal group may be set to become wider as approaching the center of the specific terminal group.
[0059] Figure 5A , Figure 5C and Figure 5D is a plan view of the semiconductor chip 300 according to Embodiment 2 when viewed from above. Figure 5B is the semiconductor substrate 100 and the output terminal 451 when viewed from the side. Figure 5A 8 is a cross-sectional view of a semiconductor device 800 in which semiconductor chips 300 are connected to each other.
[0060] exist Figure 5A , the spacing between the output terminals 451 gradually widens as they gradually approach the center of the corresponding output terminal group. Now focus on the first output terminal 451-1, the second output terminal 451-2, the third output terminal 451-3 and the fourth output terminal 451-4. The second output terminal 451-2 is adjacent to the first output terminal 451-1 from the right side, the third output terminal 451-3 is adjacent to the second output terminal 451-2 from the right side, and the fourth output terminal 451-4 is adjacent to the third output terminal 451-3 from the right side. The spacing d11 between the first output terminal 451-1 and the second output terminal 451-2 is wider than the spacing d12 between the second output terminal 451-2 and the third output terminal 451-3, and the spacing d12 is wider than the spacing d13 between the third output terminal 451-3 and the fourth output terminal 451-4.
[0061] exist Figure 5C , the spacing between the input terminals 452 gradually widens as they gradually approach the center of the corresponding input terminal group. Now focus on the first input terminal 452-1, the second input terminal 452-2, the third input terminal 452-3 and the fourth input terminal 452-4. The second input terminal 452-2 is adjacent to the first input terminal 452-1 from the right side, the third input terminal 452-3 is adjacent to the second input terminal 452-2 from the right side, and the fourth input terminal 452-4 is adjacent to the third input terminal 452-3 from the right side. The spacing d21 between the first input terminal 452-1 and the second input terminal 452-2 is wider than the spacing d22 between the second input terminal 452-2 and the third input terminal 452-3, and the spacing d22 is wider than the spacing d23 between the third input terminal 452-3 and the fourth input terminal 452-4.
[0062] exist Figure 5D In the example, the spacing between the output terminals 451 gradually widens as the distance approaches the center of the output terminal group. Figure 5D In the embodiment, the spacing between the input terminals 452 gradually widens as it approaches the center of the input terminal group. By adjusting both the spacing between the output terminals 451 of the output terminal group and the spacing between the input terminals 452 of the input terminal group, it is expected that the ratio Figure 5A and Figure 5C A more obvious liquidity improvement effect.
[0063] Implementation 3
[0064] Next, embodiment 3 will be described. In embodiment 3, the plurality of terminal groups of the semiconductor chip 300 include a first terminal group and a second terminal group. The spacing between the central portion in the row direction of the first terminal group and the central portion in the row direction of the second terminal group is set to be narrower than the spacing between the end portion in the row direction of the first terminal group and the end portion in the row direction of the second terminal group. Therefore, the amount of resin defined between the central portion of the first terminal group and the central portion of the second terminal group can be reduced. Therefore, the thickness of the resin can be easily made uniform within the plane of the semiconductor chip 300 provided with a plurality of terminals, and similarly, the terminals of the semiconductor chip 300 can be satisfactorily connected to the electrodes of the semiconductor substrate 100.
[0065] Fig. 6A , Figure 6B and Figure 6C is a plan view of the semiconductor chip 300 according to Embodiment 3 when viewed from above.
[0066] exist Fig. 6AIn the embodiment, the position of the output terminal 451 in the column direction is different between the end and the center of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. Figure 6B In the embodiment, the position of the input terminal 452 in the column direction is different between the end and the center of the input terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.
[0067] exist Figure 6C In the embodiment, the position of the output terminal 451 in the column direction is different between the end and the center of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. Figure 6C In the embodiment, the position of the input terminal 452 in the column direction is different between the end and the center of the input terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.
[0068] Implementation 4
[0069] Next, embodiment 4 will be described. In embodiment 4, the middle portion is defined as a portion between the end portion and the central portion in the row direction of the first terminal group (or the second terminal group). The spacing between the central portion in the row direction of the first terminal group and the central portion in the row direction of the second terminal group is set to be narrower than the spacing between the middle portion in the row direction of the first terminal group and the middle portion in the row direction of the second terminal group. The spacing between the middle portion in the row direction of the first terminal group and the middle portion in the row direction of the second terminal group is set to be narrower than the spacing between the end portion in the row direction of the first terminal group and the end portion in the row direction of the second terminal group. For example, the spacing between the first terminal group and the second terminal group is set to gradually decrease as it gradually approaches the center of the first terminal group (or the second terminal group) in the row direction. Therefore, the amount of resin defined between the central portion of the first terminal group and the central portion of the second terminal group can be reduced.
[0070] Fig. 7A , Figure 7B and Figure 7C is a plan view of the semiconductor chip 300 according to Embodiment 4 when viewed from above.
[0071] exist Fig. 7A In the embodiment, the position of the output terminal 451 in the column direction is changed in such a way that the distance between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). Figure 7BIn the embodiment, the position of the input terminal 452 in the column direction changes in such a manner that the interval between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group).
[0072] exist Figure 7C In the embodiment, the position of the output terminal 451 in the column direction is changed in such a way that the distance between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). Figure 7C In , the position of the input terminal 452 in the column direction also changes in such a way that the distance between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). 7A to 7C In the embodiment, the spacing d31 between the center of the output terminal group in the row direction and the center of the input terminal group in the row direction is narrower than the spacing d32 between the middle of the output terminal group in the row direction and the middle of the input terminal group in the row direction. The spacing d32 is narrower than the spacing d33 between the end of the output terminal group in the row direction and the end of the input terminal group in the row direction.
[0073] Implementation method 5
[0074] Next, Embodiment 5 will be described. As in Embodiment 3, in Embodiment 5, the spacing between the center of the first terminal group in the row direction and the center of the second terminal group in the row direction is set to be narrower than the spacing between the end of the first terminal group in the row direction and the end of the second terminal group in the row direction.
[0075] Fig. 8A , Figure 8B and Figure 8C is a plan view of the semiconductor chip 300 according to Embodiment 5 when viewed from above.
[0076] exist Fig. 8A In the embodiment, the size of the output terminal 451 in the column direction is set to be larger at the center of the output terminal group than at the end of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. Figure 8B In the embodiment, the size of the input terminal 452 in the column direction is larger at the center of the input terminal group than at the end of the input terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.
[0077] exist Figure 8CIn the embodiment, the size of the output terminal 451 in the column direction is larger at the center of the output terminal group than at the end of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. Figure 8C In the embodiment, the size of the input terminal 452 in the column direction is larger at the center of the input terminal group than at the end of the input terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.
[0078] Implementation 6
[0079] Next, Embodiment 6 will be described. As in Embodiment 4, in Embodiment 6 as well, the distance between the first terminal group and the second terminal group is set to gradually decrease as approaching the center of the first terminal group (or the second terminal group) in the row direction.
[0080] Fig. 9A , Fig. 9B and Fig. 9C is a plan view of the semiconductor chip 300 according to Embodiment 6 when viewed from above.
[0081] exist Fig. 9A In the embodiment, the size of the output terminal 451 in the column direction changes in such a way that the distance between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). Fig. 9B In the embodiment, the size of the input terminal 452 in the column direction changes in such a manner that the interval between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group).
[0082] exist Fig. 9C In the embodiment, the size of the output terminal 451 in the column direction changes in such a way that the distance between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). Fig. 9C In the embodiment, the size of the input terminal 452 in the column direction also changes in such a manner that the interval between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group).
[0083] In embodiments 3 to 6, one of the output terminal group and the input terminal group is defined as a first terminal group, the other of the output terminal group and the input terminal group is defined as a second terminal group, and the spacing between the output terminal group and the input terminal group is adjusted, but the embodiments are not limited thereto. For example, both the first terminal group and the second terminal group may be output terminal groups, and the spacing between the two output terminal groups is adjusted.
[0084] Implementation 7
[0085] Next, Embodiment Mode 7 will be described. Embodiment Mode 7 is a combination of Embodiment Mode 1 and Embodiment Mode 3. Moreover, Embodiment Mode 7 may be a combination of Embodiment Mode 1 and Embodiment Mode 4, or a combination of Embodiment Mode 1 and Embodiment Mode 5, or a combination of Embodiment Mode 1 and Embodiment Mode 6. In addition, Embodiment Mode 7 may be a combination of Embodiment Mode 2 and Embodiment Mode 3, or a combination of Embodiment Mode 2 and Embodiment Mode 4, or a combination of Embodiment Mode 2 and Embodiment Mode 5, or a combination of Embodiment Mode 2 and Embodiment Mode 6.
[0086] Fig. 10A , Fig. 10B and Fig. 10C is a plan view of the semiconductor chip 300 according to Embodiment 7 when viewed from above.
[0087] and Figure 4A Likewise, in Fig. 10A In the embodiment, the spacing between the output terminals 451 at the center of the output terminal group is wider than the spacing between the output terminals 451 at the end of the output terminal group. Fig. 6A Similarly, the position of the output terminal 451 in the column direction is different between the end and the center of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.
[0088] exist Fig. 10B In, with Figure 4C As in FIG. 1 , the pitch between the input terminals 452 at the center of the input terminal group is wider than the pitch between the input terminals 452 at the end of the input terminal group. Figure 6B As in the embodiment of the present invention, the position of the input terminal 452 in the column direction is different between the end and the center of the input terminal group, so that the spacing between the center of the output terminal group and the center of the input terminal group is narrower than the spacing between the end of the output terminal group and the end of the input terminal group.
[0089] exist Fig. 10C In, with Figure 4D As in the example, both the spacing between the output terminals 451 of the output terminal group and the spacing between the input terminals 452 of the input terminal group are adjusted. Fig. 10C In, with Figure 6C As in FIG. 4 , both the position of the output terminal 451 and the position of the input terminal 452 are adjusted.
[0090] In embodiments 1 to 7, examples of arranging a plurality of terminal groups (each terminal group includes a plurality of terminals exhibiting different positions in the row direction) along the column direction have been described, but the array direction is not limited to the row direction and / or the column direction. For example, the terminal group may include a plurality of terminals arranged along the column direction, and the plurality of terminal groups may be arranged along the row direction. Two other mutually intersecting directions may be adopted here; at least one of the row direction and the column direction may be an oblique direction.
[0091] Implementation 8
[0092] In Embodiment 8, examples in which the semiconductor device 800 according to Embodiments 1 to 7 is applied to various devices will be described. When the semiconductor device 800 is used for a display device, the semiconductor substrate 100 is a display element substrate in which a light emitting element is arranged in the effective element area AA. When the semiconductor device 800 is used as an imaging device, the semiconductor substrate 100 is an imaging element substrate in which an imaging element is arranged in the effective element area AA.
[0093] Fig.11 is a schematic diagram illustrating a display device 1000 as an example of a display device according to Embodiment 8. The display device 1000 may have a touch panel 1003 , a display panel 1005 , a frame 1006 , a circuit board 1007 , and a battery 1008 between an upper cover 1001 and a lower cover 1009 .
[0094] The display panel 1005 is a display unit that includes the semiconductor device 800 according to embodiments 1 to 7, and performs display using light emitted from the semiconductor device 800. Flexible printed circuits FPC 1002, 1004 are connected to the touch panel 1003 and the display panel 1005. A control circuit including a transistor is printed on the circuit board 1007, and performs various control tasks such as controlling the display panel 1005. If the display device is not a portable device, the battery 1008 can be omitted; even if the display device is a portable device, the battery 1008 can be set in a different position. The display device 1000 can have three types of color filters corresponding to red, green, and blue, respectively. The color filters can be arranged in a delta arrangement.
[0095] The display device 1000 may be used as a display unit of a mobile terminal. In this case, the display device 1000 may have both a display function and an operation function. The mobile terminal includes a mobile phone such as a smartphone, a tablet computer, and a head-mounted display.
[0096] The display device 1000 may be used as a display unit of a camera device, the camera device having an optical unit having a plurality of lenses, and the display unit also having an image pickup element that receives light that has passed through the optical unit. The camera device may have a display unit that displays information acquired by the image pickup element (i.e., displays, for example, an image captured by the image pickup element). The display unit may be a display unit that is exposed to the outside of the camera device, or may be a display unit that is arranged in a viewfinder. The camera device may be, for example, a digital camera or a digital video camera.
[0097] Fig. 12A 1 is a schematic diagram illustrating an imaging device 1100 as an example of an imaging device according to Embodiment 8. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to Embodiment 8 (a display device having a semiconductor device 800 according to Embodiments 1 to 7 and performing display using light emitted from the semiconductor device 800). In this case, the display device may display not only an image to be captured but also, for example, environmental information and imaging instructions. The environmental information may include, for example, external light intensity, external light direction, moving speed of a subject, and the possibility that a subject is blocked by an obstacle. The rear display 1102 may also have a display device according to Embodiment 8.
[0098] The time suitable for video recording is short, so information should be displayed as quickly as possible. Therefore, it is preferable to use a display device that further utilizes an organic light-emitting element with a high response speed. For a device that requires a high display speed, a display device with an organic light-emitting element may be more suitable than a liquid crystal display device.
[0099] The camera device 1100 has an optical unit not shown. The optical unit has a plurality of lenses and forms an image of light on an image pickup element housed in the housing 1104. The lenses can be adjusted by adjusting the relative positions of the lenses. This operation can also be performed automatically. The camera device 1100 can be referred to as a photoelectric conversion device. As a camera method other than sequential camera, the photoelectric conversion device can include a method involving detecting a difference relative to a previous image and a method involving cutting out a portion of a recorded image.
[0100] Fig. 12B1 is a schematic diagram illustrating an electronic device 1200 as an example of an electronic device according to Embodiment 8. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The display unit 1201 has the semiconductor device 800 according to Embodiments 1 to 7, and performs display using light emitted from the semiconductor device 800. The electronic device 1200 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit for communicating with the outside in the housing 1203. The operation unit 1202 may be a button, or a touch panel type reaction unit. The operation unit may be, for example, a biometric unit that performs unlocking when a fingerprint is recognized. An electronic device having a communication unit may also be referred to as a communication device. The electronic device may further have a camera function by being provided with a lens and an imaging element. An image captured by the camera function is displayed on the display unit. Examples of electronic devices include smartphones and notebook computers.
[0101] Fig.13A 1 is a schematic diagram illustrating a display device 1300 as an example of a display device according to Embodiment 8. The display device 1300 is a display device such as a TV monitor or a PC monitor. The display device 1300 has a frame 1301, a display unit 1302, and a base 1303 supporting the frame 1301 and the display unit 1302. The display unit 1302 has the semiconductor device 800 according to Embodiments 1 to 7, and performs display using light emitted from the semiconductor device 800. The form of the base 1303 is not limited to Fig.13A The lower side of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The aforementioned radius of curvature may be at least 5000 mm and not more than 6000 mm.
[0102] Fig. 13B 1 is a schematic diagram illustrating a display device 1310 as an example of another display device according to Embodiment 8. The display device 1310 is a so-called foldable display device configured to be foldable. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a folding point 1314. The first display unit 1311 and the second display unit 1312 each have a semiconductor device 800 according to Embodiments 1 to 7, and perform display using light emitted from the semiconductor device 800. The first display unit 1311 and the second display unit 1312 may be one seamless display device. The first display unit 1311 and the second display unit 1312 may be separated at a folding point. The first display unit 1311 and the second display unit 1312 may display different images; alternatively, the first display unit 1311 and the second display unit 1312 may display one image.
[0103] Fig.14A 1 is a schematic diagram illustrating a lighting device 1400 as an example of a lighting device according to Embodiment 8. The lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion portion 1405. The light source 1402 has the semiconductor device 800 according to Embodiments 1 to 7. The optical film 1404 may be a filter (optical filter) that improves the color rendering of the light source 1402. The light diffusion portion 1405 allows light from the light source 1402 to be effectively diffused, and allows light to be transmitted over a wide area, for example, in exterior decorative lighting. The optical film 1404 and the light diffusion portion 1405 may be provided on the light exit side of the lighting device 1400. A cover may be provided on the outermost side as the situation requires.
[0104] The lighting device 1400 is, for example, a device for indoor lighting. The lighting device 1400 can emit white, daylight white, or other colors (any color from blue to red). White here means a color with a color temperature of 4200K, and daylight white means a color with a color temperature of 5000K. The lighting device 1400 can have a light control circuit for controlling the luminous color of the lighting device 1400. The lighting device 1400 can have a power supply circuit connected to the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. The lighting device 1400 can have a color filter. The lighting device 1400 can have a heat sink. The heat sink discharges heat from the inside of the device to the outside of the device; the heat sink can be composed of a metal or liquid silicon that exhibits a high specific heat.
[0105] Fig. 14B is a schematic diagram illustrating a car 1500 as an example of a moving object according to Embodiment 8. The car 1500 may have a tail light 1501 as an example of a lamp. The tail light 1501 lights up in response to a brake operation, for example.
[0106] The taillight 1501 has the semiconductor device 800 according to Embodiments 1 to 7. The taillight 1501 may have a protective member for protecting the semiconductor device 800. The protective member may be made of any material as long as the material has a certain degree of high strength and is transparent; the protective member is preferably made of polycarbonate or the like. For example, a furandicarboxylic acid derivative or an acrylonitrile derivative may be mixed with polycarbonate.
[0107] The car 1500 may have a body 1503 and a window 1502 attached to the body 1503. Unless the purpose of the window is to view the front and rear of the car 1500, the window 1502 may be a transparent display. The transparent display may have the semiconductor device 800 according to Embodiments 1 to 7. In this case, constituent materials such as electrodes of the semiconductor device 800 are composed of a transparent member.
[0108] The mobile object according to Embodiment 8 may be, for example, a ship, an airplane, or a drone. The mobile object may have a main frame and a lamp provided on the main frame. The lamp may emit light to indicate the position of the main frame. The lamp includes the semiconductor device 800 according to Embodiments 1 to 7.
[0109] The display device according to Embodiment 8 (a display device having the semiconductor device 800 according to Embodiments 1 to 7 and performing display using light emitted from the semiconductor device 800) can be used in a wearable device such as smart glasses, HMD, or smart contact lenses. The display device according to Embodiment 8 can also be used in a system having a wearable device or the like. For example, an imaging display device used as a wearable device has an imaging device capable of photoelectrically converting visible light and a display device capable of emitting visible light.
[0110] Fig.15A 1 is a schematic diagram illustrating glasses 1600 (smart glasses) as an example of a wearable device according to Embodiment 8. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. A display device according to Embodiment 8 (a display device having the semiconductor device 800 according to Embodiments 1 to 7 and performing display using light emitted from the semiconductor device 800) is provided on the back side of the lens 1601.
[0111] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source for supplying power to the camera 1602 and the display device. The control device 1603 controls the operation of the camera 1602 and the display device. An optical system for converging light onto the camera 1602 is formed in the lens 1601.
[0112] Fig. 15B 1 is a schematic diagram illustrating glasses 1610 (smart glasses) as an example of a wearable device according to Embodiment 8. The glasses 1610 have a control device 1612 in such a manner that an imaging device corresponding to the imaging device 1602 and a display device according to Embodiment 8 are mounted on the control device 1612. In the lens 1611, an optical system for projecting light emitted from the imaging device and a display device in the control device 1612 are formed so that an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the display device, and controls the operations of the imaging device and the display device.
[0113] The control device may have a sight line detection unit for detecting the sight line of the wearer of the glasses 1610. Infrared rays may be used for sight line detection here. The infrared light emitting unit emits infrared light toward one eyeball of the user who is looking at the displayed image. The emitted infrared light is reflected by the eyeball and detected by a camera unit having a light receiving element, thereby obtaining a captured image of the eyeball. Here, the damage to the image quality projected from the display device to the lens 1611 is reduced by providing a reduction unit for reducing the light from the infrared light emitting unit to the display unit in the plan view. The control device detects the sight line of the user relative to the displayed image based on the captured image of the eyeball obtained by infrared light shooting. Any known method may be used to perform sight line detection using the captured image of the eyeball. As an example, a sight line detection method using a Purkinje image obtained by reflection of the irradiated light on the cornea may be used. More specifically, a sight line detection process based on the pupil-cornea reflection method is implemented here. The user's line of sight is detected by calculating a line of sight vector representing the orientation (rotation angle) of the eyeball according to the pupil-cornea reflection method based on the Purkinje image and the pupil image included in the captured image of the eyeball.
[0114] When display control is performed based on visual recognition detection (line of sight detection), the semiconductor device 800 according to Embodiments 1 to 7 can be preferably used in smart glasses having a camera that captures external images. The smart glasses can display captured external information in real time.
[0115] A display device according to embodiment 8 (a display device having a semiconductor device 800 according to embodiments 1 to 7 and performing display using light emitted by the semiconductor device 800) may have a camera having a light receiving element, and may control a display image based on information about a line of sight from the camera to the user. Specifically, a first field of view area that the user is looking at and a second field of view area other than the first field of view area are determined based on the line of sight information. The first field of view area and the second field of view area may be determined by a control device of the display device; alternatively, the display device may receive a field of view area determined by an external control device. In the display area of the display device, the display resolution in the first field of view area may be controlled to be higher than the display resolution in the second field of view area. That is, the resolution in the second field of view area may be set to be lower than the resolution of the first field of view area.
[0116] The display area may have a first display area and a second display area different from the first display area, and one of the first display area and the second display area may be determined as a higher priority area based on line of sight information. The first display area and the second display area may be determined by a control device of the display device; alternatively, the display device may receive a display area determined by an external control device. The resolution of the high priority area may be controlled to be higher than the resolution of areas other than the high priority area. That is, in a relatively low priority area, the resolution may be reduced.
[0117] Here, AI (artificial intelligence) can be used to determine the first field of view area and the high priority area. AI can be a model constructed to estimate the line of sight angle and the distance to the subject located in front of the line of sight from the eyeball image using training data in the form of an eyeball image and the direction in which the eyeball is actually looking in the image. The AI program can be provided in a display device, a camera device, or an external device. In the case where the external device has an AI program, the AI program is transmitted to the display device via communication.
[0118] As described above, by using the semiconductor device 800 according to Embodiments 1 to 7, various devices can stably display images with good image quality for a long time.
[0119] The functional units (configurations) of the various devices described in Implementation 8 may or may not be single hardware. The functions of two or more functional units may be implemented by shared hardware. Each of the multiple functions of a functional unit may be implemented by independent hardware. Two or more functions of a functional unit may be implemented by shared hardware. The functional unit may or may not be implemented by hardware such as ASIC, FPGA, and DSP. For example, the device may have a processor and a memory (storage medium) storing a control program. The reason why the functions of at least some of the functional units of the device can be implemented is that the processor reads out the control program from the memory and executes the control program.
[0120] The present invention successfully provides a semiconductor device in which terminals of a semiconductor chip are satisfactorily mounted on electrodes of a semiconductor substrate in a flip-chip mounting manner.
[0121] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
Claims
1. A semiconductor device comprising: A semiconductor chip in which a plurality of terminal groups including a plurality of terminals arranged along a first direction are arranged along a second direction intersecting the first direction, wherein at least one of the plurality of terminal groups comprises a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on the opposite side of the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on the opposite side of the second terminal in the first direction; A distance between the first terminal and the second terminal in the first direction is wider than a distance between the second terminal and the third terminal in the first direction; and A distance between the second terminal and the third terminal in the first direction is wider than a distance between the third terminal and the fourth terminal in the first direction.
2. The semiconductor device according to claim 1, in, In at least one terminal group among the plurality of terminal groups, a distance between two terminals adjacent to each other in the first direction gradually widens as approaching a center of the terminal group in the first direction.
3. The semiconductor device according to claim 1 or 2, in, The first direction is a row direction and the second direction is a column direction.
4. The semiconductor device according to claim 1 or 2, further comprising A semiconductor substrate is provided with a plurality of electrodes, and the plurality of electrodes are respectively connected to a plurality of terminals of the semiconductor chip via connection members.
5. The semiconductor device according to claim 4, in, The plurality of terminals of the semiconductor chip and the plurality of electrodes of the semiconductor substrate are connected to each other by thermocompression bonding or ultrasonic compression bonding using epoxy resin, acrylic resin, or anisotropic conductive resin as the connection member.
6. A semiconductor device comprising: a semiconductor chip in which a plurality of terminal groups including a plurality of terminals arranged along a first direction are arranged along a second direction intersecting the first direction; Wherein, the plurality of terminal groups include a first terminal group and a second terminal group; a spacing between a central portion of the first terminal group in the first direction and a central portion of the second terminal group in the first direction is narrower than a spacing between a middle portion arranged between a central portion and an end portion of the first terminal group in the first direction and a middle portion arranged between a central portion and an end portion of the second terminal group in the first direction; and A distance between a middle portion of the first terminal group in the first direction and a middle portion of the second terminal group in the first direction is narrower than a distance between an end portion of the first terminal group in the first direction and an end portion of the second terminal group in the first direction.
7. The semiconductor device according to claim 6, in, Positions of the terminals in the second direction are different between a central portion of the first terminal group and an end portion of the first terminal group.
8. The semiconductor device according to claim 7, in, Positions of the terminals in the second direction are different between a central portion of the second terminal group and an end portion of the second terminal group.
9. The semiconductor device according to claim 6, in, The size of the terminals at the center portion of the first terminal group in the second direction is larger than the size of the terminals at the end portions of the first terminal group in the second direction.
10. The semiconductor device according to claim 9, in, The size of the terminals at the center portion of the second terminal group in the second direction is larger than the size of the terminals at the end portions of the second terminal group in the second direction.
11. The semiconductor device according to any one of claims 6 to 10, in, The distance between the first terminal group and the second terminal group gradually narrows as approaching the center of the first terminal group in the first direction.
12. The semiconductor device according to any one of claims 6 to 10, in, One of the first terminal group and the second terminal group is an input terminal group, and The other of the first terminal group and the second terminal group is an output terminal group.
13. The semiconductor device according to any one of claims 6 to 10, wherein At least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, and a third terminal adjacent to the second terminal on an opposite side of the first terminal in the first direction, and A spacing between the first terminal and the second terminal in the first direction is wider than a spacing between the second terminal and the third terminal in the first direction.
14. A display device, comprising: A display unit having the semiconductor device according to any one of claims 1 to 13; and A control circuit is configured to control the display unit.
15. A photoelectric conversion device comprising: Optical unit; an imaging element configured to receive light having passed through the optical unit; and a display unit configured to display an image captured by the imaging element, The display unit includes the semiconductor device according to any one of claims 1 to 13.
16. An electronic device comprising: A display unit having the semiconductor device according to any one of claims 1 to 13; A housing of the display unit is provided therein; and A communication unit is provided in the housing and communicates with the outside.
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