Temperature control method, semiconductor processing equipment and computer readable storage medium

Abstract

The invention provides a temperature control method, semiconductor processing equipment and a computer readable storage medium. The temperature control method comprises the following steps that the temperature deviation E between the actual temperature and the target temperature of the heating disc and the change rate EC of the temperature deviation are obtained; according to the temperature deviation E and the change rate EC of the temperature deviation, determining a proportionality coefficient, an integral coefficient and a differential coefficient which are used for performing fuzzy control on the temperature of the heating plate; establishing a transfer function of a temperature control system of the heating disc; and adjusting the actual temperature of the heating plate to the target temperature according to the proportionality coefficient, the integral coefficient, the differential coefficient and the transfer function. The method can be used for controlling the reaction temperature in the process chamber so as to reduce the temperature oscillation time in the temperature control process, thereby improving the quality of the thin film deposition process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a temperature control method, a semiconductor processing device, and a computer-readable storage medium. Background Art

[0002] During the deposition of semiconductor thin films, the heating disk in the semiconductor processing equipment often uses a proportional-integral-differential (PID) control algorithm to control the temperature in the reaction chamber. However, due to the complex process of the deposition process and the problems of time lag, nonlinearity, and slow response of the traditional PID control algorithm, the power fluctuation of the heating disk will be large and cannot be applied to the entire reaction process, thus affecting the quality of thin film deposition. Furthermore, traditional PID controllers often produce large overshoots, causing the power of the heating disk to drop to a very low level, even close to 0. In addition, some existing fuzzy self-tuning PID controllers are not effective, and it is often necessary to manually adjust the PID control parameters during the control process, which seriously affects the process efficiency.

[0003] In order to overcome the above-mentioned defects of the prior art, the art urgently needs an improved temperature control method for controlling the reaction temperature in the process chamber to reduce the temperature oscillation time during the temperature control process, thereby improving the quality of the thin film deposition process. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a temperature control method, a semiconductor processing equipment and a computer-readable storage medium, which can be used to control the reaction temperature in the process chamber by real-time correction of the proportional coefficient, integral coefficient and differential coefficient used for fuzzy control, so as to reduce the temperature oscillation time in the temperature control process, thereby improving the quality of the thin film deposition process.

[0006] Specifically, the temperature control method provided according to the first aspect of the present invention includes the following steps: obtaining a temperature deviation E between the actual temperature of the heating disk and the target temperature, and a rate of change EC of the temperature deviation; determining a proportional coefficient, an integral coefficient and a differential coefficient for fuzzy control of the temperature of the heating disk according to the temperature deviation E and the rate of change EC of the temperature deviation; establishing a transfer function of the temperature control system of the heating disk; and adjusting the actual temperature of the heating disk to the target temperature according to the proportional coefficient, the integral coefficient, the differential coefficient and the transfer function.

[0007] Furthermore, in some embodiments of the present invention, the step of establishing the transfer function includes: acquiring machine data of the temperature control system; and fitting the parameters of the transfer function according to the machine data:

[0008]

[0009] Wherein, K is the gain of the temperature control system, T is the time system constant, and s is the complex frequency variable.

[0010] Further, in some embodiments of the present invention, the step of determining the proportional coefficient, integral coefficient and differential coefficient for fuzzy control of the temperature of the heating plate according to the temperature deviation E and the rate of change of the temperature deviation EC includes: obtaining the target temperature of the heating plate; establishing the proportional coefficient change △KP, the integral coefficient change △KI and the differential coefficient change △KD, and a fuzzy rule table about the temperature deviation E and the temperature deviation change EC according to the target temperature; determining the proportional coefficient change △KP, the integral coefficient change △KI and the differential coefficient change △KD according to the temperature deviation E, the rate of change of the temperature deviation EC and the fuzzy control table; and adjusting the proportional coefficient K according to the proportional coefficient change △KP, the integral coefficient change △KI and the differential coefficient change △KD. P , the integral coefficient K I and the differential coefficient K D :

[0011] K P =K P0 +c1·ΔK P

[0012] K I =K I0 +c2·ΔK I

[0013] K D =K D0 +c3·ΔK D

[0014] Among them, K P0 is the initial value of the proportionality coefficient. K I0 is the initial value of the integral coefficient. K D0 is the initial value of the differential coefficient. c1, c2, and c3 are proportionality factors respectively.

[0015] Further, in some embodiments of the present invention, the step of determining the proportionality coefficient change amount ΔKP, the integral coefficient change amount ΔKI, and the differential coefficient change amount ΔKD according to the temperature deviation E, the change rate EC of the temperature deviation, and the fuzzy control table includes: determining the temperature deviation E and the change rate EC of the temperature deviation according to a preset membership function, the target cell corresponding to the proportionality coefficient change amount ΔKP in the first fuzzy rule table, and determining the proportionality coefficient change amount ΔKP according to the value of the target cell to calculate the adjusted proportionality coefficient K P ; and / or determining the temperature deviation E and the change rate EC of the temperature deviation according to a preset membership function, the target cell corresponding to the integral coefficient change amount ΔKI in the second fuzzy rule table, and determining the integral coefficient change amount ΔKI according to the value of the target cell to calculate the adjusted integral coefficient K I ; and / or determining the temperature deviation E and the change rate EC of the temperature deviation according to a preset membership function, the target cell corresponding to the differential coefficient change amount ΔKD in the third fuzzy rule table, and determining the differential coefficient change amount ΔKD according to the value of the target cell to calculate the adjusted differential coefficient K D .

[0016] Further, in some embodiments of the present invention, the membership function is a triangular membership function, which is expressed as:

[0017]

[0018] Among them, A(x) is the triangular membership function. x is the value of the temperature deviation E or the change rate EC of the temperature deviation. a and c are the coordinate values corresponding to the two slanted waists of the triangular membership function respectively. a < c. b is the coordinate value corresponding to the peak of the triangular membership function.

[0019] Further, in some embodiments of the present invention, the initial value K of the proportionality coefficient P0 , the initial value K of the integral coefficient I0 and the initial value K of the differential coefficient D0 are obtained by fitting the machine data of the temperature control system.

[0020] Further, in some embodiments of the present invention, the step of adjusting the actual temperature of the heating disk to the target temperature according to the proportional coefficient, the integral coefficient, the differential coefficient and the transfer function includes: determining a first temperature difference e(k) of the heating disk according to the actual temperature y(k) and the target temperature r(k):

[0021] e(k)=y(k)-r(k)

[0022] Wherein, y(k) is the actual temperature at the kth moment. r(k) is the target temperature at the kth moment. According to the proportional coefficient, the integral coefficient and the differential coefficient, the first temperature change u(k) of the heating plate is calculated:

[0023]

[0024] Wherein, e(j) is the temperature deviation of the jth sample measured at the kth moment. e(k) and e(k-1) are the temperature deviations at the kth moment and the k-1th moment respectively; and the temperature of the heating plate is adjusted according to the first temperature change.

[0025] Furthermore, in some embodiments of the present invention, the temperature control method further comprises the following steps: obtaining machine data of the temperature control system; fitting the hysteresis time of the transfer function according to the machine data. The hysteresis time is used to indicate the control accuracy of the temperature control system; determining the hysteresis temperature y′(k) of the heating plate according to the hysteresis time and the actual temperature y(k); determining the second temperature difference e′(k) of the heating plate according to the hysteresis temperature y′(k) and the target temperature r(k):

[0026] e′(k)=y′(k)-r(k)

[0027] Wherein, r(k) is the target temperature at the kth moment; and the second temperature change u′(k) of the heating plate is calculated according to the proportional coefficient, the integral coefficient and the differential coefficient:

[0028]

[0029] Wherein, e′(j) is the temperature deviation of the hth sample measured at the kth moment. e′(k) and e′(k-1) are the temperature deviations at the kth moment and the k-1th moment respectively; and according to the second temperature variation, the temperature of the heating plate is adjusted.

[0030] In addition, the semiconductor processing equipment provided according to the second aspect of the present invention includes: a heating plate, a temperature control system, a memory and a controller. The heating plate is used to heat the wafer to be processed. The temperature control system is connected to the heating plate and is used to control the temperature of the heating plate. The memory stores computer instructions. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the temperature control method provided by the first aspect of the present invention.

[0031] In addition, the above-mentioned computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions thereon, and is characterized in that when the computer instructions are executed by a processor, the temperature control method provided by the first aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0033] Figure 1 A schematic flow chart of a temperature control method provided according to some embodiments of the present invention is shown.

[0034] Figure 2 A schematic diagram showing the principles of a temperature control method provided according to some embodiments of the present invention is shown.

[0035] Figure 3 A line graph showing the value changes of each symbol with respect to E in the fuzzy rule table provided according to some embodiments of the present invention is shown.

[0036] Figure 4 A line graph showing the value changes of each symbol in the fuzzy rule table with respect to EC according to some embodiments of the present invention is shown.

[0037] Figure 5 A three-dimensional schematic diagram of the change in the proportional coefficient ΔKP with respect to E and EC according to some embodiments of the present invention is shown.

[0038] Figure 6 A three-dimensional schematic diagram of the integral coefficient change △KI with respect to E and EC according to some embodiments of the present invention is shown.

[0039] Figure 7 A three-dimensional schematic diagram of the differential coefficient change ΔKD with respect to E and EC according to some embodiments of the present invention is shown.

[0040] Figure 8A simulation framework diagram of a traditional PID control algorithm provided according to some embodiments of the present invention and a temperature control method provided according to the first aspect of the present invention is shown.

[0041] Fig. 9 A curve diagram showing the change in heating plate temperature versus time of a conventional PID control algorithm provided according to some embodiments of the present invention and a temperature control method provided according to the first aspect of the present invention is shown. DETAILED DESCRIPTION

[0042] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0043] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0045] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0046] As mentioned above, due to the complex process of deposition and the time lag, nonlinearity, slow response and other problems of the traditional PID control algorithm, the power fluctuation of the heating plate will be large and cannot be applied to the entire reaction process, thus affecting the quality of thin film deposition. Furthermore, the traditional PID controller often produces a large overshoot, causing the power of the heating plate to drop to a very low level, even close to 0. In addition, some existing fuzzy self-tuning PID controllers are not effective, and it is often necessary to manually adjust the PID control parameters during the control process, which seriously affects the process efficiency.

[0047] In order to overcome the above-mentioned defects of the prior art, the present invention provides a temperature control method, a semiconductor processing equipment and a computer-readable storage medium, which can be used to control the reaction temperature in the process chamber by real-time correction of the proportional coefficient, integral coefficient and differential coefficient used for fuzzy control, so as to reduce the temperature oscillation time in the temperature control process, thereby improving the quality of the thin film deposition process.

[0048] In some non-limiting embodiments, the semiconductor processing equipment provided in the second aspect of the present invention includes a heating plate, a temperature control system, a memory and a controller. Here, the heating plate is used to heat the wafer to be processed. The temperature control system is connected to the heating plate and is used to control the temperature of the heating plate. The memory includes but is not limited to the computer-readable storage medium provided in the third aspect, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the temperature control method provided in the first aspect of the present invention.

[0049] The working principle of the above-mentioned semiconductor processing equipment will be described below in conjunction with some embodiments of the temperature control method. Those skilled in the art will understand that the embodiments of these control methods are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the semiconductor processing equipment. Similarly, the semiconductor processing equipment is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in these temperature control methods.

[0050] Please refer to Figure 1 and Figure 2 . Figure 1 A schematic flow chart of a temperature control method provided according to some embodiments of the present invention is shown. Figure 2 A schematic diagram showing the principles of a temperature control method provided according to some embodiments of the present invention is shown.

[0051] like Figure 1 and Figure 2As shown, the controller can first obtain the temperature deviation E between the actual temperature of the heating plate and the target temperature (for example, 200°C), and calculate the change rate EC of the temperature deviation:

[0052]

[0053] Afterwards, the controller can determine the proportional coefficient K for fuzzy control of the temperature of the heating plate according to the temperature deviation E and the rate of change of the temperature deviation EC. P , integral coefficient K I and differential coefficient K D .

[0054] Please refer to Table 1 to Table 3 for details. Figure 3 and Figure 4 Table 1 shows a fuzzy rule table of the proportional coefficient variation △KP with respect to E and EC according to some embodiments of the present invention. Table 2 shows a fuzzy rule table of the integral coefficient variation △KI with respect to E and EC according to some embodiments of the present invention. Table 3 shows a fuzzy rule table of the proportional coefficient variation △KP with respect to E and EC according to some embodiments of the present invention. Figure 3 A line graph showing the value changes of each symbol with respect to E in the fuzzy rule table provided according to some embodiments of the present invention is shown. Figure 4 A line graph showing the value changes of each symbol in the fuzzy rule table with respect to EC according to some embodiments of the present invention is shown.

[0055] Table 1 Fuzzy rules table of proportional coefficient change △KP with respect to E and EC

[0056]

[0057] Table 2 Fuzzy rules table of integral coefficient change △KI with respect to E and EC

[0058]

[0059] Table 3 Fuzzy rules table of differential coefficient change △KD about E and EC

[0060]

[0061] Specifically, the controller can first obtain the target temperature of the heating plate. Then, as shown in Tables 1 to 3, the controller can establish the proportional coefficient change △KP, the integral coefficient change △KI and the differential coefficient change △KD, the fuzzy rule table about the temperature deviation E and the temperature deviation change EC according to the target temperature.

[0062] Here, the rows of the above fuzzy rule table represent the value range of the temperature deviation E, and the columns represent the value range of the temperature deviation change EC. The cells in this fuzzy rule table are composed of elements from the set {NB, NM, NS, ZO, PS, PM, PB}, where NB < NM < NS < ZO < PS < PM < PB and ZO = 0. NB, NM, NS, ZO, PS, PM, PB represent negative large, negative medium, negative small, 0, positive small, positive medium, and positive large, respectively.

[0063] Please refer further to Figure 5 to Figure 7 。 Figure 5 FIG. shows a three-dimensional schematic diagram of the change in the proportionality coefficient change ΔKP with respect to changes in E and EC according to some embodiments of the present invention. Figure 6 FIG. shows a three-dimensional schematic diagram of the change in the integral coefficient change ΔKI with respect to changes in E and EC according to some embodiments of the present invention. Figure 7 FIG. shows a three-dimensional schematic diagram of the change in the derivative coefficient change ΔKD with respect to changes in E and EC according to some embodiments of the present invention.

[0064] After that, as Figure 5 to Figure 7 shown, the controller can determine the proportionality coefficient change ΔKP, the integral coefficient change ΔKI, and the derivative coefficient change ΔKD according to the temperature deviation E, the temperature deviation change rate EC, and the fuzzy control table.

[0065] Specifically, the controller can determine the temperature deviation E and the change rate EC of the temperature deviation according to a preset membership function, the target cell corresponding to the first fuzzy rule table of the proportionality coefficient change ΔKP, and determine the proportionality coefficient change ΔKP according to the value of the target cell to calculate the adjusted proportionality coefficient K P :

[0066] K P =K P0 +c1·ΔK P

[0067] where K P0 is the initial value of the proportionality coefficient, and c1 is the proportionality factor.

[0068] For example, as shown in Table 1, when both the temperature deviation E and the temperature deviation change EC are NB, ΔKP takes PB. Another example, as shown in Table 1, when the temperature deviation E is NB and the temperature deviation change EC is NM, ΔKP takes PB.

[0069] Similarly, the controller can also determine the temperature deviation E and the change rate EC of the temperature deviation according to a preset membership function, the target cell corresponding to the second fuzzy rule table of the integral coefficient change ΔKI, and determine the integral coefficient change ΔKI according to the value of the target cell to calculate the adjusted integral coefficient KI :

[0070] K I = K I0 + c2·ΔK I

[0071] Wherein, K I0 is the initial value of the integral coefficient, and c2 is the proportionality factor.

[0072] For example, as shown in Table 2, when both the temperature deviation E and the temperature deviation change amount EC are NB, ΔKI takes NB. Another example, as shown in Table 2, when the temperature deviation E is NB and the temperature deviation change amount EC is NM, ΔKI takes NB.

[0073] Similarly, the controller can also determine the target cell corresponding to the temperature deviation E and the change rate EC of the temperature deviation in the third fuzzy rule table of the differential coefficient change amount ΔKD according to the preset membership function, and determine the differential coefficient change amount ΔKD according to the value of the target cell, so as to calculate the adjusted differential coefficient K D :

[0074] K D = K D0 + c3·ΔK D

[0075] Wherein, K D0 is the initial value of the differential coefficient, and c3 is the proportionality factor.

[0076] For example, as shown in Table 3, when both the temperature deviation E and the temperature deviation change amount EC are NB, ΔKP takes PB. Another example, as shown in Table 3, when the temperature deviation E is NB and the temperature deviation change amount EC is NM, ΔKP takes PM.

[0077] Furthermore, in some embodiments, the above-mentioned membership function is a triangular membership function, which is expressed as:

[0078]

[0079] Wherein, A(x) is the triangular membership function, x is the value of the temperature deviation E or the change rate EC of the temperature deviation, a and c are the coordinate values corresponding to the two slanting waists of the triangular membership function respectively, a < c, and b is the coordinate value corresponding to the peak of the triangular membership function.

[0080] In this way, the controller can calculate the values of each target cell according to this membership function to respectively determine the values of the proportional coefficient change amount ΔKP, the integral coefficient change amount ΔKI, and the differential coefficient change amount ΔKD.

[0081] Furthermore, in some preferred embodiments, the initial value K of the above-mentioned proportional coefficientP0 , initial value of integral coefficient K I0 and the initial value K of the differential coefficient D0 It is obtained by fitting the machine data of the temperature control system. Here, K P0 =0.01, K I0 =1, K D0 =0.05.

[0082] After that, the controller can establish the transfer function of the temperature control system of the heating plate. The controller can obtain the machine data of the temperature control system and fit the parameters of the transfer function according to the machine data:

[0083]

[0084] Where K is the gain of the temperature control system, T is the time system constant, and s is the complex frequency variable.

[0085] Please further refer to Table 4. Table 4 shows a machine data table of a temperature control system provided according to some embodiments of the present invention.

[0086] Table 4 Machine data table of temperature control system

[0087] Serial number minute temperature 1 1 35℃ 2 2 55℃ 3 3 109℃ 4 4 153℃ 5 5 225℃ 6 6 260℃ 7 7 272℃ 8 8 259℃ 9 9 251℃

[0088] Specifically, the controller can calculate based on the machine data shown in Table 4:

[0089] K=0.755

[0090] T=3.900

[0091] In this way, the controller can obtain the transfer function that meets the corresponding machine:

[0092]

[0093] After that, the controller can calculate the proportional coefficient K P , integral coefficient K I Differential coefficient K D and transfer function to adjust the actual temperature of the heating plate to the target temperature.

[0094] Specifically, the controller may first determine the first temperature difference e(k) of the heating plate according to the actual temperature y(k) at the kth moment and the target temperature r(k):

[0095] e(k)=y(k)-r(k)

[0096] Among them, y(k) is the actual temperature at the kth moment, and r(k) is the target temperature at the kth moment.

[0097] After that, the controller can be adjusted according to the proportional coefficient K P , integral coefficient K I and differential coefficient K D , calculate the first temperature change u(k) of the heating plate:

[0098]

[0099] Wherein, e(j) is the temperature deviation of the jth sample measured at the kth moment, and e(k) and e(k-1) are the temperature deviations at the kth moment and the k-1th moment, respectively. Afterwards, the controller may adjust the temperature of the heating plate according to the first temperature variation.

[0100] In addition, in some preferred embodiments, the controller can also obtain machine data of the temperature control system, and fit the hysteresis time of the transfer function according to the machine data. Here, the hysteresis time is used to indicate the control accuracy of the temperature control system.

[0101] Afterwards, the controller may determine the hysteresis temperature y′(k) of the heating plate according to the hysteresis time and the actual temperature y(k), and determine the second temperature difference e′(k) of the heating plate according to the hysteresis temperature y′(k) and the target temperature r(k):

[0102] e′(k)=y′(k)-r(k)

[0103] Wherein, r(k) is the target temperature at the kth moment.

[0104] After that, the controller can calculate the proportional coefficient K P , integral coefficient K I and differential coefficient K D , calculate the second temperature change u′(k) of the heating plate:

[0105]

[0106] Wherein, e′(j) is the temperature deviation of the jth sample measured at the kth moment, and e′(k) and e′(k-1) are the temperature deviations at the kth moment and the k-1th moment, respectively. Afterwards, the controller may adjust the temperature of the heating plate according to the second temperature variation.

[0107] Please refer to further Figure 8 and Fig. 9 . Figure 8 A simulation framework diagram of a traditional PID control algorithm provided according to some embodiments of the present invention and a temperature control method provided according to the first aspect of the present invention is shown. Fig. 9 A curve diagram showing the change in heating plate temperature versus time of a conventional PID control algorithm provided according to some embodiments of the present invention and a temperature control method provided according to the first aspect of the present invention is shown.

[0108] like Figure 8 and Fig. 9 As shown, the heating plate of the semiconductor processing equipment controlled by the traditional PID control algorithm reaches a relatively high temperature during the heating stage, reaching the target temperature in about 5 minutes, reaching the highest temperature in 7 minutes, and being much higher than the target temperature. In addition, the time of its oscillation stage is also relatively long, causing its temperature to stabilize in about 40 minutes. The temperature control method provided by the first aspect of the present invention reaches the set temperature in about 4 minutes during the heating stage, reaches the highest temperature in 7 minutes, and is close to the target temperature. In addition, the time of its oscillation stage is about 20 minutes, which is much shorter than the oscillation time required by the traditional PID control algorithm. In this way, the temperature control method provided by the first aspect of the present invention can reduce the temperature oscillation time during the temperature control process, thereby improving the quality of the thin film deposition process.

[0109] In summary, the above-mentioned temperature control method, semiconductor processing equipment and computer-readable storage medium provided by the present invention can control the reaction temperature in the process chamber by real-time correction of the proportional coefficient, integral coefficient and differential coefficient used for fuzzy control, so as to reduce the temperature oscillation time during the temperature control process, thereby improving the quality of the thin film deposition process.

[0110] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0111] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature control method, characterized in that: It includes the following steps: Obtain the temperature deviation E between the actual temperature and the target temperature of the heating plate, and the change rate EC of the temperature deviation; Determine the proportional coefficient, integral coefficient, and differential coefficient for fuzzy control of the temperature of the heating plate according to the temperature deviation E and the change rate EC of the temperature deviation; Establish the transfer function of the temperature control system of the heating plate; And Adjust the actual temperature of the heating plate to the target temperature according to the proportional coefficient, the integral coefficient, the differential coefficient, and the transfer function.

2. The temperature control method according to claim 1, characterized in that: The step of establishing the transfer function includes: Obtain the machine data of the temperature control system; and Fit the parameters of the transfer function according to the machine data: Where K is the gain of the temperature control system, T is the time system constant, and s is the complex frequency variable.

3. The temperature control method according to claim 1, characterized in that: The step of determining the proportional coefficient, integral coefficient, and differential coefficient for fuzzy control of the temperature of the heating plate according to the temperature deviation E and the change rate EC of the temperature deviation includes: Obtain the target temperature of the heating plate; According to the target temperature, respectively establish fuzzy rule tables of the proportional coefficient change amount △KP, the integral coefficient change amount △KI, and the differential coefficient change amount △KD with respect to the temperature deviation E and the change amount EC of the temperature deviation; Determine the proportional coefficient change amount △KP, the integral coefficient change amount △KI, and the differential coefficient change amount △KD according to the temperature deviation E, the change rate EC of the temperature deviation, and the fuzzy control table; and According to the proportional coefficient change ΔKP, the integral coefficient change ΔKI and the differential coefficient change ΔKD, the proportional coefficient K is adjusted. P , the integral coefficient K I and the differential coefficient K D : K P =K P0 +c1·ΔK P K I =K I0 +c2·ΔK I K D =K D0 +c3·ΔK D Among them, K P0 is the initial value of the proportionality coefficient, K I0 is the initial value of the integral coefficient, K D0 is the initial value of the differential coefficient, c1, c2, c3 are proportional factors respectively.

4. The temperature control method according to claim 3, characterized in that: The step of determining the proportional coefficient change amount △KP, the integral coefficient change amount △KI, and the differential coefficient change amount △KD according to the temperature deviation E, the change rate EC of the temperature deviation, and the fuzzy control table includes: According to the preset membership function, the temperature deviation E and the change rate EC of the temperature deviation are determined, and the corresponding target cells in the first fuzzy rule table of the proportional coefficient change ΔKP are determined, and according to the value of the target cell, the proportional coefficient change ΔKP is determined to calculate the adjusted proportional coefficient K P ; and / or According to the preset membership function, the temperature deviation E and the rate of change of the temperature deviation EC are determined, and the corresponding target cells in the second fuzzy rule table of the integral coefficient change ΔKI are determined, and according to the value of the target cell, the integral coefficient change ΔKI is determined to calculate the adjusted integral coefficient K I ; and / or According to the preset membership function, the temperature deviation E and the rate of change of the temperature deviation EC are determined, and the corresponding target cells in the third fuzzy rule table of the differential coefficient change ΔKD are determined, and according to the value of the target cell, the differential coefficient change ΔKD is determined to calculate the adjusted differential coefficient K D .

5. The temperature control method according to claim 4, characterized in that: The membership function is a triangular membership function, which is expressed as: Where A(x) is the triangular membership function, x is the value of the temperature deviation E or the change rate EC of the temperature deviation, a and c are the coordinate values corresponding to the two oblique waists of the triangular membership function respectively, a < c, and b is the coordinate value corresponding to the peak of the triangular membership function.

6. The temperature control method according to claim 5, characterized in that: The initial value K of the proportionality coefficient P0 , the initial value K of the integral coefficient I0 and the initial value K of the differential coefficient D0 It is obtained by fitting the machine data of the temperature control system.

7. The temperature control method according to claim 1, characterized in that: The step of adjusting the actual temperature of the heating plate to the target temperature according to the proportional coefficient, the integral coefficient, the differential coefficient, and the transfer function includes: Determine the first temperature difference e(k) of the heating plate according to the actual temperature y(k) and the target temperature r(k): e(k) = y(k) - r(k) Where y(k) is the actual temperature at the k-th moment, and r(k) is the target temperature at the k-th moment; Calculate the first temperature change amount u(k) of the heating plate according to the proportional coefficient, the integral coefficient, and the differential coefficient: Where e(j) is the temperature deviation of the j-th sample measured at the k-th moment, and e(k) and e(k - 1) are the temperature deviations at the k-th moment and the (k - 1)-th moment respectively; and Adjust the temperature of the heating plate according to the first temperature change amount.

8. The temperature control method according to claim 1, characterized in that: It further includes the following steps: Obtain the machine data of the temperature control system; Fitting the hysteresis time of the transfer function according to the machine data, wherein the hysteresis time is used to indicate the control accuracy of the temperature control system; According to the hysteresis time and the actual temperature y(k), the hysteresis temperature y of the heating plate is determined ′ (k); According to the hysteresis temperature y ′ (k) and the target temperature r(k), determine the second temperature difference e of the heating plate ′ (k): e ′ (k)=y ′ (k)-r(k) Where r(k) is the target temperature at the kth moment; According to the proportional coefficient, the integral coefficient and the differential coefficient, the second temperature change u of the heating plate is calculated. ′ (k): Among them, e ′ (j) is the temperature deviation of the jth sample measured at the kth time, e ′ (k) and e ′ (k-1) are the temperature deviations at the kth moment and the k-1th moment respectively; and The temperature of the heating plate is adjusted according to the second temperature change.

9. A semiconductor processing equipment, characterized in that: include: A heating plate for heating the wafer to be processed; A temperature control system, connected to the heating plate, for controlling the temperature of the heating plate; a memory having computer instructions stored thereon; and A controller is connected to the memory and is configured to execute computer instructions stored in the memory to implement the temperature control method according to any one of claims 1 to 8.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the temperature control method according to any one of claims 1 to 8 is implemented.

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