A method of fabricating short channel transistors by mechanical stacking of electrodes

Abstract

The application discloses a kind of by mechanical electrode preparation short channel transistor of stacking, belong to transistor processing technical field, for solving the economicization of short channel electrode preparation method in prior art and the technical problem that traditional transparent polypropylene resin performance needs to be further improved;The application comprises the following steps: preparing several electrodes on the surface of substrate layer after cleaning treatment, is by preparing a modified polypropylene resin and the method for preparing short channel transistor of stacking of electrode provided in the application by mechanical, the high transparency and scratch resistance of modified polypropylene resin guarantee the accuracy of mechanical stacking, its excellent leveling performance, high temperature resistance and adhesion performance guarantee the stability of electrode structure in transfer process, the preparation cost of short channel transistor is reduced, and its accuracy is improved again by cooperation.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of transistor processing technology, in particular to a method for preparing a short channel transistor by mechanically stacking electrodes. BACKGROUND

[0002] With the continuous exploration of new materials and new structures, short channel devices become important in laboratory research, which not only promotes the in-depth study of basic science, but also is an important means to build high-performance integrated devices. By reducing the channel length, short channel devices reduce the transmission time of charge carriers, effectively reducing the power consumption of the device. At present, extreme ultraviolet lithography and electron beam lithography technology are the mainstream preparation methods. By using an extreme ultraviolet source or a focused electron beam to define the required electrode pattern on a silicon wafer coated with a sensitive material, among them, electron beam lithography technology has become the first choice for short channel device preparation due to its high resolution and flexibility.

[0003] In the prior art, when EBL technology is applied to the preparation process of short channel devices, the following steps are included: first, a substrate with a flat surface is selected for cleaning to eliminate surface impurities; then, a layer of electron beam resist is uniformly spin-coated on the substrate surface and pre-baked to improve the adhesion of the resist and remove the solvent; then, the electron beam lithography machine is used to accurately expose the resist according to the preset pattern, which changes its solubility. The exposure dose and the focusing accuracy of the electron beam directly affect the fineness of the short channel. Then, the exposed substrate is placed in a developing solution to remove the exposed part of the resist and form the required pattern. Then, the electrode material is deposited on the patterned resist by physical vapor deposition technology. Finally, the remaining resist and the electrode material on the upper layer are removed, leaving only the required electrode pattern.

[0004] In the production of short channel devices, ultraviolet lithography and electron beam lithography technology are common manufacturing processes. Although EBL technology is very important in pushing the limits of micro-nano size, high equipment and operating costs limit its widespread application. EBL technology is a key link in micro-nano manufacturing, but its high equipment cost and the requirement for environmental control and precise adjustment of the equipment increase the operating cost. In addition to the cost of the equipment itself, there are also high reservation machine time fees and machine maintenance fees, which limit its popularity in short channel device manufacturing. The time period of the prior art is long, and EBL process involves complex reservation waiting and processing time.

[0005] In the lithography process, complicated vacuum treatment, focusing, calibration and positioning steps are required, which significantly prolongs the manufacturing cycle and increases the time cost. The material damage risk of the prior art is high. The direct interaction between the electron beam and the material in the EBL technology may cause charge accumulation and radiation damage, which affects the performance and reliability of the device.

[0006] Traditional transparent polypropylene resin, such as polymethyl methacrylate, has excellent optical performance, which can reach more than 92.0%, but it is very easy to be scratched, and the scratch produced after scratching will significantly affect its transparency, so that it cannot provide clear visual effect, and polymethyl methacrylate is extremely unstable in a heated state, resulting in unstable performance as an adhesive material.

[0007] In view of the technical defects in this aspect, a solution is proposed. SUMMARY

[0008] The purpose of the present application is to provide a method for preparing a short channel transistor by mechanically stacking electrodes, which is used to solve the technical problems of the economicization of the preparation method of the short channel electrode in the prior art and the further improvement of the performance of the traditional transparent polypropylene resin.

[0009] The purpose of the present application can be achieved by the following technical solution: a method for preparing a short channel transistor by mechanically stacking electrodes, comprising the following steps:

[0010] S1, preparing a plurality of electrodes on the surface of the substrate layer after cleaning treatment;

[0011] S2, setting an adhesive layer and a support layer on the substrate layer and the electrodes to obtain a substrate layer modified by a composite architecture layer;

[0012] S3, peeling off the composite architecture from the substrate layer to obtain a plurality of electrode materials after post-processing;

[0013] S4, selecting the required electrode material to be transferred to the surface of the target carrier to obtain a transistor material after post-processing;

[0014] S5, continuing to select the required electrode material prepared in steps S1-S3 to be transferred to the surface of the target carrier to obtain a short channel transistor.

[0015] Further, the substrate layer includes a single silicon wafer, mica, a flexible substrate, silicon nitride, silicon oxide and graphene, etc.

[0016] Further, in step S1, the cleaning treatment includes: sequentially cleaning the substrate layer with acetone, isopropyl alcohol and deionized water for 3-5 times in sequence.

[0017] Further, the operation of preparing the electrode includes the determination of the electrode shape and the formation of the electrode entity, the method for determining the electrode shape includes ultraviolet lithography, electron beam lithography, hard mask and nanosphere lithography, and the method for forming the electrode entity includes electron beam evaporation plating, thermal evaporation plating, magnetron sputtering plating and electrochemical deposition.

[0018] Preferably, the method for determining the electrode shape selects electron beam lithography, and the method for forming the electrode entity selects thermal evaporation plating.

[0019] Further, in step S1, the electrode is processed by the following steps:

[0020] A1, after spin-coating a negative photoresist on the substrate layer, the substrate layer is transferred to a drying box with a temperature of 80°C for vacuum drying, to obtain a substrate layer with a negative photoresist attached to the surface;

[0021] A2, after adjusting the shape of the radiation area of the photoetching machine, the photoresist is subjected to radiation exposure treatment, to obtain a patterned photoresist surface with a desired shape;

[0022] A3, the patterned photoresist surface is subjected to surface deposition using electron beam evaporation technology, and after deposition, the residual photoresist is stripped, to obtain an electrode.

[0023] Further, the shape of the electrode to be transferred can be arbitrarily selected according to requirements, and the material of the electrode to be transferred includes gold, silver, copper, aluminum, bismuth, target, and platinum.

[0024] Further, in step S2, the forming method of the adhesion layer and the support layer includes the following steps:

[0025] B1, spin-coat an adhesion solution on the surface of the substrate layer, coat all the electrodes, and then transfer the material to a drying box with a temperature of 80°C for vacuum drying, with heat preservation for 20-40 min, to obtain a substrate layer with an adhesion layer attached to the surface;

[0026] B2, use a thin plate as the support layer to adhere to the adhesion layer, and then transfer the material to a drying box, with the temperature of the drying box increased to 50°C, and heat preservation for 10-15 min, to further obtain a composite architecture layer composed of an electrode / adhesion layer / support layer.

[0027] Further, in step B1, the adhesion solution is an acetone solution of 15-30 wt% modified polypropylene resin; in step B2, the thin plate includes a polydimethylsiloxane thin plate and a polydimethylsiloxane / polyvinyl chloride thin plate, and the thickness of the thin plate is 200-250 μm.

[0028] Further, the preparation method of the modified polypropylene resin is as follows: 3-5 parts of 3-isocyanate propyl trimethoxysilane, 8-10 parts of modified polypropylene resin precursor, 0.3-0.5 parts of triethylamine, and 30-40 parts of dimethyl sulfoxide are weighed according to the weight ratio, and then added to a reaction kettle, and reacted at room temperature for 2-4 h, and then post-treated to obtain the modified polypropylene resin.

[0029] The reaction equation for preparing the modified polypropylene resin is as follows:

[0030]

[0031] In the formula:

[0032] The reaction principle for preparing the modified polypropylene resin is that the ethoxyl group of 3-isocyanate propyl trimethoxysilane is hydrolyzed under weak alkaline conditions to generate a silanol group, which reacts with the hydroxyl group of the modified polypropylene resin precursor to form a silicon-oxygen bond, so that the modified polypropylene resin is prepared.

[0033] Further, the post-treatment includes that after the reaction kettle is cooled to room temperature, the reaction liquid is added into a rotary evaporator with a water bath temperature of 80-100°C, and vacuum distillation is performed until no liquid is collected, so that the modified polypropylene resin is obtained.

[0034] Further, the preparation method of the modified polypropylene resin precursor is that 3-5 parts of methyl methacrylate, 5-8 parts of 2-hydroxypropyl-1,2-benzenedicarboxylic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester, 0.3-0.5 parts of azobisisobutyronitrile and 30-40 parts of dimethyl sulfoxide are weighed according to the weight parts and added into a reaction kettle, the temperature of the reaction kettle is increased to 50-70°C, and heat preservation reaction is performed for 2-4 hours, and post-treatment is performed to obtain the modified polypropylene resin precursor.

[0035] The reaction equation for preparing the modified polypropylene resin precursor is as follows:

[0036]

[0037] In the formula, R represents a methyl group, and n represents an integer of 1-100.

[0038] The reaction principle for preparing the modified polypropylene resin precursor is that, under the action of the free radical initiator azobisisobutyronitrile, methyl methacrylate and 5-8 parts of 2-hydroxypropyl-1,2-benzenedicarboxylic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester undergo a free radical polymerization reaction, and finally the modified polypropylene resin precursor is generated.

[0039] Further, the post-treatment includes that after the reaction kettle is cooled to room temperature, the reaction liquid is added into a rotary evaporator with a water bath temperature of 80-100°C, and vacuum distillation is performed until no liquid is collected, so that the modified polypropylene resin precursor is obtained.

[0040] Further, in step S3, the peeling method of the composite architecture layer is that a chemical reagent is used to flush the connection between the adhesion layer and the substrate layer, a forceps is used to clamp the composite architecture layer and the substrate layer respectively, and the composite architecture layer is slowly lifted until it is completely peeled off from the substrate layer.

[0041] Further, in step C2, the chemical reagent includes an acetone solution, an isopropyl alcohol solution, a saturated hydrogen peroxide solution and a saturated sodium hydroxide solution.

[0042] Further, in step S3, the post-processing operation includes: using a cutting machine to cut the composite structure into the required shape, separating the electrodes, and obtaining electrode materials composed of the required electrodes / adhesion layer / support layer.

[0043] Further, in step S4, the electrode material transfer method is: attaching the support layer side of the required electrode material to a glass sheet, using a transfer table to attach the layered structure to the target carrier, applying a pressure of 200-400 Pa in the attached state, and heating to 120-150°C, maintaining for 5-10 min, to obtain an electrode material modified target carrier.

[0044] Further, in step S4, the post-processing operation includes: transferring the electrode material modified target carrier to a solvent solution for 5-10 min, peeling off the adhesion layer and support layer, and obtaining a layered structure composed of electrodes / target carriers, and placing the layered structure in an annealing machine, setting the annealing machine temperature to 150-170°C, and setting the annealing time to 1-3h, to obtain a short channel transistor precursor.

[0045] Further, in step S4, the dissolving solution is acetone.

[0046] Further, the target carrier includes a rigid carrier and a flexible carrier, the rigid carrier includes silicon oxide, single crystal silicon and diamond, and the flexible carrier includes polydimethylsiloxane.

[0047] Optionally, the target carrier surface has a pre-prepared thin layer structure, and the thin layer structure includes a metal electrode, a metal antenna and a two-dimensional material.

[0048] Further, in step S5, the short channel transistor is processed by the following steps:

[0049] D1. Select a required electrode material from the remaining electrode materials prepared in steps S1-S3, attach the support layer side of the required electrode material to a glass sheet, position it directly above the short channel transistor precursor, and adjust the Z-axis height of the transfer table to ensure the consistency of the distance between the short channel transistor precursor and the required electrode material;

[0050] D2. Adjust the position of the transfer table in the x and y axis directions to control the distance between the required electrode material and the short channel transistor precursor, and when the distance meets the requirements, use the transfer table to accurately attach the required electrode material to the target carrier, apply a pressure of 300-500 Pa to the new composite structure layer in the attached state, and heat to 100-150°C, maintaining for 5-10 min, and use a laser interferometer to measure the distance and angle between the required electrode material and the short channel transistor precursor during the process, to obtain a modified short channel transistor precursor.

[0051] D3, soak the modified short channel transistor precursor in the dissolving solution for 5-10 min, after peeling off the adhesion layer and the support layer, place the material in the annealing machine, set the annealing machine temperature to 150-170 DEG C, and set the annealing time to 1-3 h, to obtain a short channel transistor.

[0052] Further, in step D3, the dissolving solution is acetone.

[0053] Optionally, the short channel transistor is cleaned with a chemical reagent or an acid-base solution to remove the adhesion layer residue.

[0054] Optionally, the chemical reagent includes acetone, isopropyl alcohol, and ethanol.

[0055] Optionally, the short channel transistor is cleaned with a chemical reagent or an acid-base solution to remove the adhesion layer residue.

[0056] Optionally, steps S1-S3 can be prepared according to the needs of several electrode materials, and after cutting, the materials are collected for standby.

[0057] Optionally, steps S4-S5 are repeatedly performed on the same target carrier, and a plurality of combined short channel structures can be obtained on the same target carrier.

[0058] The present application has the following advantages:

[0059] 1. The present application provides a method for preparing a short channel transistor by mechanically stacking electrodes, which significantly reduces the preparation cost compared with the traditional EBL technology. The EBL equipment not only has high cost in equipment investment and maintenance, but also has high operation cost due to its complex operation and special consumables (such as electron beam resist). The present method provides a more cost-effective solution by simplifying the process and reducing the demand for special materials, and weakly depending on high-precision instruments, significantly reducing the preparation cost compared with electron beam lithography, including equipment investment and maintenance cost, and operation cost. The simplified preparation process and reduced special material demand further reduce the marginal cost of experiments, so that laboratories with limited budget can also conduct high-precision device preparation research.

[0060] 2、The application provides a method for preparing a short channel transistor by mechanically stacking electrodes, compared with the traditional EBL technology, the application effectively avoids the direct contact of the target carrier with potential pollution sources such as photoresist and developing solution by transferring the substrate layer to the target carrier after the electrode is pre-prepared, thereby reducing the risk of pollution of the target carrier; the traditional EBL technology directly acts on the target carrier to prepare a short channel electrode by a high-energy electron beam, the high-energy electron beam may cause charge accumulation of the sample when interacting with the sample, and the high-energy electron beam may also cause radiation damage to the material, thereby affecting the performance of the device, and the secondary stacking preparation method avoids the radiation damage of the high-energy electron beam to the material, thereby protecting the original properties of the material, and the reduction of the damage to the material not only helps to protect valuable or sensitive research samples, but also reduces the dependence of the laboratory on special treatment facilities; meanwhile, on the same target carrier, according to the requirements, the stacking is repeatedly performed, and a combined structure of multiple short channel electrodes can be obtained, and the high process flexibility not only makes various device configurations possible, but also further enhances the customization and adaptability of production, thereby meeting diversified application requirements.

[0061] 3、The application is a modified polypropylene resin precursor with a large number of ester bonds and benzene rings synthesized by using a free radical polymerization reaction, the large number of ester groups in the modified polypropylene resin precursor enhance the transparency of the modified polypropylene resin precursor, the presence of benzene rings enhances the rigidity of the modified polypropylene resin precursor, further enhances the wear resistance, reduces scratches caused by wear of the device, and makes the transparency more stable; the modified polypropylene resin is obtained by introducing siloxane through silane coupling agent crosslinking, which enhances the crosslinking ability with inorganic materials, significantly enhances the flow leveling performance and high temperature resistance, enhances the adhesion with organic films, and the smooth surface keeps the organic film in a smooth state, enhances the adhesion with the support layer, and ensures the stability of the composite architecture layer; the high-transparency modified polypropylene resin prepared by the application cooperates with a high-precision transfer table, the high transparency ensures the accurate regulation of the transfer table between the electrode channels, ensures the accuracy of the relative positions between the electrode materials, controls the device size, avoids the direct contact of the electrode with potential pollution sources such as the support layer, and effectively reduces the pollution risk in the preparation process. BRIEF DESCRIPTION OF DRAWINGS

[0062] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description, and obviously, the drawings in the following description are only some embodiments of the application, and those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0063] Figure 1 The preparation flow chart of the short channel electrode of the application.

[0064] Figure 2 Schematic diagram for making several electrodes on the surface of the substrate layer.

[0065] Figure 3 Schematic diagram for setting the adhesive layer and the support layer on the surface of the substrate layer and the electrode;

[0066] Figure 4 Schematic diagram for peeling the composite architecture layer from the substrate layer;

[0067] Figure 5 Schematic diagram for cutting the composite architecture layer into the required electrode material;

[0068] Figure 6 Schematic diagram for transferring the required electrode material to the target carrier;

[0069] Figure 7 Schematic diagram for peeling the adhesive layer and the support layer;

[0070] Figure 8 Schematic diagram for transferring the required electrode material to the target carrier;

[0071] Figure 9 Schematic diagram for adjusting the parameters of the transfer station so that the composite architecture layer prepared repeatedly is aligned with the electrode transferred to obtain the required channel;

[0072] Figure 10 Schematic diagram of the side view and top view of the short channel electrode tube transferred.

[0073] In the figure: 1, substrate layer; 2, electrode; 3, adhesive layer; 4, support layer; 5, target carrier. DETAILED DESCRIPTION

[0074] The technical solutions of the present application will be described clearly and completely below in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0075] Embodiment 1

[0076] The present embodiment is used to provide a method for preparing a short channel transistor by mechanically stacking electrodes, comprising the following steps:

[0077] S1, preparing an adhesive solution

[0078] Take 9.0 g of methyl methacrylate, 18.0 g of 2-hydroxypropyl-1,2-benzene dicarboxylic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester, 1.2 g of azobisisobutyronitrile and 96.0 g of dimethyl sulfoxide into the reaction kettle, the temperature of the reaction kettle is raised to 50℃, and the reaction is kept for 2 h. After the reaction kettle is cooled to room temperature, the reaction solution is added to a rotary evaporator with a water bath temperature of 80℃, and distilled under reduced pressure until no liquid is collected, obtaining 26.6 g of modified polypropylene resin precursor;

[0079] Take 8.0 g of 3-isocyanate propyl trimethoxysilane, 24.0 g of modified polypropylene resin precursor, 1.1 g of triethylamine and 96.0 g of dimethyl sulfoxide into the reaction kettle, and react at room temperature for 2-4 h. After the reaction kettle is cooled to room temperature, the reaction solution is added to a rotary evaporator with a water bath temperature of 80℃, and distilled under reduced pressure until no liquid is collected, obtaining 31.2 g of modified polypropylene resin;

[0080] Take 15.0 g of modified polypropylene resin and 85.0 g of acetone into the reaction kettle and mix well, obtaining a 15.0 wt% modified polypropylene resin acetone solution.

[0081] S2, preparation of composite architecture layer

[0082] Rinse the silicon nitride 1 with acetone, isopropyl alcohol and deionized water in sequence, 3 times in order;

[0083] After spin coating the photoresist on the cleaned silicon nitride 1, place the silicon nitride 1 in a drying oven at a temperature of 80℃ for vacuum drying for 20 min, obtaining the silicon nitride 1 with surface modified photoresist;

[0084] After adjusting the shape of the radiation area of the photoetching machine, the photoresist is exposed to radiation to obtain a plurality of patterned photoresist surfaces with the desired shape;

[0085] After depositing a silver electrode on the patterned photoresist surface using thermal evaporation coating technology, the photoresist is peeled off to obtain a plurality of electrode 2 modified silicon nitride 1;

[0086] After spin coating the 15.0 wt% modified polypropylene resin acetone solution on the surface of the silicon nitride 1 to coat the electrode 2, place the silicon nitride 1 / electrode 2 in a drying oven at a temperature of 80℃ for vacuum drying for 20 min, obtaining the adhesion layer 3;

[0087] Use a 200 μm thick polydimethylsiloxane sheet as a support layer 4 to adhere to the adhesion layer 3, and transfer the material to a drying oven, which is heated to 50℃ for 10 min, obtaining the silicon nitride 1 modified by the composite architecture layer composed of electrode 2 / adhesion layer 3 / support layer 4;

[0088] Using acetone solution to flush the junction of the adhesion layer 3 and the silicon nitride 1, using tweezers to clamp the composite architecture layer and the silicon nitride 1 respectively, slowly lift the composite architecture layer until completely separated from the silicon nitride 1, and obtain the composite architecture layer.

[0089] S3, preparing a short channel electrode tube

[0090] After cutting the composite architecture layer into several required electrode materials, collect for standby, select a required electrode material and paste the support layer 4 side to the glass sheet, use the transfer table to paste the required electrode material to the single crystal silicon 5, apply a pressure of 200 Pa in the pasting state, and heat to 120℃ at the same time, maintain for 5 min, and obtain the electrode material modified target carrier;

[0091] Transfer the electrode material modified target carrier 5 to the solvent solution and soak for 5 min, after peeling off the adhesion layer 3 and the support layer 4, obtain the laminated structure composed of the electrode 2 / target carrier 5, place the laminated structure into the annealing machine, set the annealing machine temperature to 150℃, and set the annealing time to 1 h, and obtain the short channel transistor precursor;

[0092] Select a required electrode material from the remaining electrode materials prepared in steps S1-S2;

[0093] Paste the support layer 4 side of the required electrode material to the glass sheet, position it directly above the short channel transistor precursor, and adjust the Z-axis height of the transfer table to ensure the consistency of the distance between the required electrode material and the short channel transistor precursor;

[0094] Adjust the position of the transfer table in the x and y axis directions to control the distance between the two electrodes of the required electrode material and the short channel transistor precursor, when the distance reaches the requirement, use the transfer table to accurately paste the required electrode material to the single crystal silicon 5, apply a pressure of 300 Pa to the new composite architecture layer in the pasting state, and heat to 100℃ at the same time, maintain for 5 min, and use the laser interferometer to measure and adjust the distance and angle between the required electrode material and the short channel transistor precursor during the process, and obtain the modified short channel transistor precursor;

[0095] Place the modified short channel transistor precursor into the dissolving solution and soak for 5-10 min, after peeling off the adhesion layer 3 and the support layer 4, place the material into the annealing machine, set the annealing machine temperature to 150℃, and set the annealing time to 1 h, and obtain the short channel transistor.

[0096] Example 2

[0097] The embodiment is used to provide a method for preparing a short channel transistor by mechanically stacking electrodes, comprising the following steps:

[0098] S1, preparation of an adhesive solution

[0099] Take 7.5 g of methyl methacrylate, 17.5 g of 2-hydroxypropyl-1,2-benzenedicarboxylic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester, 1.2 g of azobisisobutyronitrile and 80.0 g of dimethyl sulfoxide by weight, and add them to the reaction kettle. The temperature of the reaction kettle is raised to 70°C, and the reaction is kept for 4 h. After the reaction kettle is cooled to room temperature, the reaction liquid is added to the rotary evaporator with a water bath temperature of 100°C. Distillation is carried out under reduced pressure until no liquid is collected, and 24.3 g of modified polypropylene resin precursor is obtained.

[0100] Take 10.6 g of 3-isocyanate propyl trimethoxysilane, 21.4 g of modified polypropylene resin precursor, 1.2 g of triethylamine and 96.0 g of dimethyl sulfoxide by weight, and add them to the reaction kettle. The reaction is carried out at room temperature for 2-4 h. After the reaction kettle is cooled to room temperature, the reaction liquid is added to the rotary evaporator with a water bath temperature of 100°C. Distillation is carried out under reduced pressure until no liquid is collected, and 31.5 g of modified polypropylene resin is obtained.

[0101] Take 30.0 g of modified polypropylene resin and 70.0 g of acetone by weight, and add them to the reaction kettle. Mix them uniformly to obtain a 30.0 wt% modified polypropylene resin acetone solution.

[0102] S2, preparation of a composite architecture layer

[0103] Rinse the silicon nitride 1 with acetone, isopropyl alcohol and deionized water in sequence, 5 times in order;

[0104] After spin coating the photoresist on the cleaned silicon nitride 1, place the silicon nitride 1 in a drying oven at a temperature of 80°C for vacuum drying for 40 min to obtain the silicon nitride 1 with a surface modified photoresist;

[0105] After adjusting the shape of the radiation area of the photoetching machine, perform radiation exposure treatment on the photoresist to obtain a plurality of patterned photoresist surfaces with the desired shape;

[0106] Use thermal evaporation plating technology to deposit a silver electrode on the patterned photoresist surface to obtain a plurality of patterned electrodes 2, and then peel off the photoresist to obtain a plurality of electrodes 2 modified silicon nitride 1;

[0107] After spin coating the 30.0 wt% modified polypropylene resin acetone solution on the surface of the silicon nitride 1 to coat the electrodes 2, place the silicon nitride 1 / electrodes 2 in a drying oven at a temperature of 80°C for vacuum drying for 40 min to obtain the adhesive layer 3;

[0108] The adhesion layer 3 is attached to the support layer 4 using a polydimethylsiloxane sheet with a thickness of 250 μm, and the material is transferred to a drying oven, the temperature of which is raised to 50°C, and maintained for 15 min, to obtain a composite architecture layer modified silicon nitride 1 composed of the electrode 2 / adhesion layer 3 / support layer 4;

[0109] The adhesion layer 3 and the junction of the silicon nitride 1 are flushed with an acetone solution, the composite architecture layer and the silicon nitride 1 are respectively clamped with tweezers, and the composite architecture layer is slowly lifted until it is completely separated from the silicon nitride 1, to obtain the composite architecture layer.

[0110] S3, preparation of a short-channel electrode tube

[0111] After the composite architecture layer is cut into several required electrode materials, it is collected for standby use, one required electrode material is selected and attached to a glass sheet on the side of the support layer 4, and the required electrode material is attached to the single-crystal silicon 5 using a transfer stage, a pressure of 400 Pa is applied in the attached state, and the temperature is raised to 150°C, which is maintained for 10 min, to obtain an electrode material modified target carrier;

[0112] The electrode material modified target carrier 5 is transferred to a solvent solution and soaked for 10 min, and after the adhesion layer 3 and the support layer 4 are peeled off, a laminated structure composed of the electrode 2 / target carrier 5 is obtained, which is placed in an annealing machine, the temperature of which is set to 170°C, and the annealing time is set to 3 h, to obtain a short-channel transistor precursor;

[0113] One required electrode material is selected from the remaining electrode materials prepared in steps S1-S2;

[0114] The side of the support layer 4 of the required electrode material is attached to a glass sheet, which is positioned directly above the short-channel transistor precursor, and the consistency of the distance between the required electrode material and the short-channel transistor precursor is ensured by precisely adjusting the Z-axis height of the transfer stage;

[0115] The positions of the x and y axes of the transfer stage are adjusted to control the distance between the two electrodes of the required electrode material and the short-channel transistor precursor, and when the distance reaches the required value, the required electrode material is accurately attached to the single-crystal silicon 5 using the transfer stage, a pressure of 300 Pa is applied to the new composite architecture layer in the attached state, and the temperature is raised to 100°C, which is maintained for 5 min, and the distance and angle between the required electrode material and the short-channel transistor precursor are measured and adjusted using a laser interferometer during the process, to obtain a modified short-channel transistor precursor;

[0116] The modified short-channel transistor precursor is placed in a dissolving solution and soaked for 10 min, and after the adhesion layer 3 and the support layer 4 are peeled off, the material is placed in an annealing machine, the temperature of which is set to 170°C, and the annealing time is set to 3 h, to obtain a short-channel transistor.

[0117] Example 3

[0118] The present embodiment is used to provide a method for preparing a short channel transistor by mechanically stacking electrodes, comprising the following steps:

[0119] S1, preparing an adhesive solution

[0120] 10.0 g of methyl methacrylate, 14.0 g of 2-hydroxypropyl-1,2-benzenedicarboxylic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester, 1.0 g of azobisisobutyronitrile and 70.0 g of dimethyl sulfoxide are weighed in parts by weight into a reaction kettle, the temperature of the reaction kettle is raised to 60°C, and the reaction is kept for 3 h. After the reaction kettle is cooled to room temperature, the reaction liquid is added to a rotary evaporator with a water bath temperature of 90°C, and distilled under reduced pressure until no liquid is collected, obtaining 23.5 g of modified polypropylene resin precursor;

[0121] 11.4 g of 3-isocyanate propyl trimethoxysilane, 20.6 g of modified polypropylene resin precursor, 1.0 g of triethylamine and 84.0 g of dimethyl sulfoxide are weighed in parts by weight into a reaction kettle, and reacted at room temperature for 2-4 h. After the reaction kettle is cooled to room temperature, the reaction liquid is added to a rotary evaporator with a water bath temperature of 90°C, and distilled under reduced pressure until no liquid is collected, obtaining 31.5 g of modified polypropylene resin;

[0122] 20.0 g of modified polypropylene resin and 80.0 g of acetone are weighed into a reaction kettle and mixed uniformly to obtain a 20.0 wt% modified polypropylene resin acetone solution.

[0123] S2, preparing a composite architecture layer

[0124] The silicon nitride 1 is sequentially rinsed with acetone, isopropyl alcohol and deionized water, and cleaned 4 times in sequence;

[0125] After the photoresist is spin-coated on the cleaned silicon nitride 1, the silicon nitride 1 is placed in a drying oven at a temperature of 80°C for vacuum drying for 30 min, obtaining the silicon nitride 1 with a surface modified photoresist;

[0126] After adjusting the radiation area shape of the photoetching machine, the photoresist is subjected to radiation exposure treatment, obtaining a plurality of patterned photoresist surfaces with desired shapes;

[0127] The patterned photoresist surfaces are subjected to surface silver electrode deposition using a thermal evaporation plating film technology, obtaining a plurality of patterned electrodes 2. The photoresist is then stripped, obtaining a plurality of electrodes 2 modified silicon nitride 1;

[0128] After coating the electrode 2 with the 20.0wt% modified polypropylene resin acetone solution on the surface of the silicon nitride 1, the silicon nitride 1 / electrode 2 was placed in a drying oven at a temperature of 80℃ for vacuum drying for 30min, to obtain a modified polypropylene resin layer;

[0129] A polycarbonate film with a thickness of 125μm was attached to the modified polypropylene resin layer to form an adhesion layer 3;

[0130] A polydimethylsiloxane sheet with a thickness of 225μm was used as a support layer 4 to adhere to the adhesion layer 3, and the material was transferred to a drying oven, the temperature of which was increased to 50℃, and the temperature was maintained for 12min, to obtain a silicon nitride 1 modified with a composite architecture layer composed of the electrode 2 / adhesion layer 3 / support layer 4;

[0131] The connection between the adhesion layer 3 and the silicon nitride 1 was flushed with an acetone solution, and the composite architecture layer and the silicon nitride 1 were respectively clamped with tweezers, and the composite architecture layer was slowly lifted until it was completely separated from the silicon nitride 1, to obtain the composite architecture layer.

[0132] S3, preparation of a short channel electrode tube

[0133] After cutting the composite architecture layer into several required electrode materials, the electrode materials were collected for standby, and one required electrode material was selected and attached to a glass sheet with the support layer 4 side, and the required electrode material was adhered to a single crystal silicon 5 using a transfer table, and a pressure of 200Pa was applied in the adhered state, and the temperature was heated to 120℃, and maintained for 5min, to obtain an electrode material modified target carrier;

[0134] The electrode material modified target carrier 5 was transferred to a solvent solution and soaked for 8min, and after peeling off the adhesion layer 3 and the support layer 4, a laminated structure composed of the electrode 2 / target carrier 5 was obtained, and the laminated structure was placed in an annealing machine, the temperature of which was set to 160℃, and the annealing time was set to 3h, to obtain a short channel transistor precursor;

[0135] One required electrode material was selected from the remaining electrode materials prepared in steps S1-S2;

[0136] The support layer 4 side of the required electrode material was attached to a glass sheet, positioned directly above the short channel transistor precursor, and the consistency of the distance between the required electrode material and the short channel transistor precursor was ensured by precisely adjusting the Z-axis height of the transfer table;

[0137] The position of the transfer table x, y axis direction is adjusted, the distance between the required electrode material and the short channel transistor precursor is controlled, when the distance reaches the requirement, the required electrode material is precisely attached to the single crystal silicon 5 by the transfer table, in the attached state, 300 Pa pressure is applied to the new composite architecture layer, and heated to 100 ℃, maintained for 5 min, the distance and angle between the required electrode material and the short channel transistor precursor are measured and adjusted by using a laser interferometer during the process, to obtain a modified short channel transistor precursor;

[0138] The modified short channel transistor precursor is soaked in a dissolving solution for 8 min, after the adhesive layer 3 and the support layer 4 are peeled off, the material is placed in an annealing machine, the annealing machine temperature is set to 170 ℃, and the annealing time is set to 2 h, to obtain a short channel transistor.

[0139] Comparative Example 1

[0140] The difference between the present comparative example and Example 3 is that step S1 is cancelled, and in step S2, an equal amount of 20.0wt% polymethyl methacrylate acetone solution is used instead of 20.0wt% modified polypropylene resin acetone solution.

[0141] Comparative Example 2

[0142] The difference between the present comparative example and Example 3 is that in step S1, the modification step of the modified polypropylene resin precursor is cancelled, and in step S2, an equal amount of 20.0wt% modified polypropylene resin precursor acetone solution is used instead of 20.0wt% modified polypropylene resin acetone solution.

[0143] Performance test:

[0144] The width difference of the short channel in the short channel electrode prepared in Examples 1-3 and Comparative Examples 1-2, the average linear thermal expansion coefficient of the adhesive layer, the transparency, the leveling ability, the adhesion grade and the scratch resistance of the adhesive layer are tested.

[0145] The width difference of the short channel bottom is calculated according to the maximum width and the minimum width of the short channel bottom measured according to the standard GB / T 42158-2023 "Description and measurement method of micro-groove and pyramid needle structure of micro-electro-mechanical system (MEMS) technology";

[0146] The average linear thermal expansion coefficient of the adhesive layer is measured according to the standard GB / T 36800.2-2018 "Plastics - Thermomechanical analysis (TMA) - Part 2: Determination of linear thermal expansion coefficient and glass transition temperature";

[0147] The transparency of the cured adhesive layer is measured according to the standard GB / T 2410-2008 "Determination of light transmittance and haze of transparent plastics";

[0148] The leveling ability was determined according to the standard GB / T 33403-2016 "Test method for self-leveling performance of adhesives".

[0149] The adhesion grade was determined according to the standard GB / T 33049-2016 "Method for determining the adhesion of optical film coatings for polarizing plates".

[0150] The scratch resistance was determined according to the standard GB / T 17657-2022 "Test methods for physical and chemical properties of wood-based panels and veneered wood-based panels", and the specific structure is shown in Table 1.

[0151] Table 1 - Performance test data table of each sample

[0152]

[0153] Data analysis:

[0154] Comparative analysis of the data in Table 1 shows that the short channel width difference of the short channel electrode prepared by the present application is 0.2 μm, the average linear thermal expansion coefficient (20-150°C) of the modified polypropylene resin prepared by the present application is 42.4 x 10 -6 K -1 , the layer height difference after curing is 0.4 mm, the adhesion grade is 0, the light transmittance is 96.4%, and the scratch resistance grade is 5. The performance is better than that of the comparative example. The high transparency and scratch resistance of the modified polypropylene resin ensure the accuracy of the mechanical stacking, the excellent leveling performance, high temperature resistance and adhesion performance of the modified polypropylene resin ensure the stability of the electrode structure during the transfer process, and the combination of the two reduces the preparation cost of the short channel transistor and improves its accuracy.

[0155] The above content is only an example and description of the structure of the present application, and those skilled in the art can make various modifications or supplements or use similar ways to replace the described specific embodiments, as long as they do not deviate from the structure of the present application or exceed the scope defined by the present claims.

[0156] In the description of the present specification, the description of the terms "one embodiment", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0157] The preferred embodiments of the application disclosed above are only to facilitate the elucidation of the application. The preferred embodiments do not describe all the details of the application and limit the application to the specific embodiments. Obviously, many modifications and variations can be made in light of the teachings above. The description is chosen and described in order to provide the best illustration of the application principles and their practical application, so that those skilled in the art can well understand and utilize the application. The application is limited only by the claims and their full scope and equivalents.

Claims

1. A method for fabricating a short-channel transistor by mechanically stacking electrodes, characterized in that, Includes the following steps: S1. Several electrodes (2) are prepared on the surface of the cleaned substrate (1). S2. An adhesion layer (3) and a support layer (4) are sequentially disposed on the substrate (1) and the electrode (2) from bottom to top to obtain a substrate (1) modified with a composite architecture layer. S3. Peel the composite architecture layer from the substrate layer (1) and cut the composite architecture layer to several required electrode materials; S4. Select a desired electrode material and transfer it to the surface of the target carrier (5) to obtain the target carrier modified with the electrode material. Peel off the adhesion layer (3) and the support layer (4) to obtain the short-channel transistor precursor. S5. Continue to select the required electrode materials prepared in steps S1-S3 and transfer them to the surface of the target carrier (5) to obtain a short-channel transistor. In step S2, the method for forming the adhesive layer (3) and the support layer (4) includes the following steps: B1. Spin-coat an adhesive solution onto the surface of the substrate (1) to cover all the electrodes (2), then transfer it to a drying oven at 80°C for vacuum drying and keep it at that temperature for 20-40 minutes to obtain a substrate (1) with an adhesive layer (3) attached to its surface. The adhesive solution is an acetone solution of 15-30 wt% modified polypropylene resin. B2. Using a thin plate as a support layer (4) to bond the adhesive layer (3), transfer it to a drying oven, raise the temperature of the drying oven to 50°C, keep it warm for 10-15 min, and further obtain a composite structure layer composed of electrode (2) / adhesive layer (3) / support layer (4). The modified polypropylene resin is prepared by weighing 3-5 parts of 3-isocyanate-propyltrimethoxysilane, 8-10 parts of modified polypropylene resin precursor, 0.3-0.5 parts of triethylamine and 30-40 parts of dimethyl sulfoxide into a reaction vessel, reacting at room temperature for 2-4 h, and then post-processing to obtain the modified polypropylene resin. The modified polypropylene resin precursor is prepared by weighing 3-5 parts by weight of methyl methacrylate, 5-8 parts by weight of 2-hydroxypropyl-1,2-phthalic acid-2-[(2-methyl-1-oxo-2-propenyl)oxy]ethyl ester, 0.3-0.5 parts by weight of azobisisobutyronitrile and 30-40 parts by weight of dimethyl sulfoxide and adding them to a reaction vessel. The temperature of the reaction vessel is raised to 50-70℃ and the reaction is maintained for 2-4 hours. The modified polypropylene resin precursor is then obtained after post-treatment. In step S5, the short-channel transistor is obtained by the following steps: D1. Select a desired electrode material from the remaining electrode materials prepared in steps S1-S3, attach one side of the support layer (4) of the desired electrode material to the glass plate, position it directly above the short-channel transistor precursor, and ensure the consistency of the distance between the short-channel transistor precursor and the desired electrode material by precisely adjusting the Z-axis height of the transfer stage. D2. Adjust the position of the transfer stage in the x and y directions to control the distance between the two electrodes between the required electrode material and the short-channel transistor precursor. When the distance meets the requirements, use the transfer stage to accurately attach the required electrode material to the target carrier (5). Apply a pressure of 300-500Pa to the new composite architecture layer while it is attached, and heat it to 100-150℃ and maintain it for 5-10 minutes. During the process, use a laser interferometer to measure and adjust the distance and angle between the required electrode material and the short-channel transistor precursor to obtain the modified short-channel transistor precursor. D3. Immerse the modified short-channel transistor precursor in the solution for 5-10 minutes. After peeling off the adhesion layer (3) and the support layer (4), place the material in an annealing machine. Set the annealing machine temperature to 150-170℃ and the annealing time to 1-3 hours to obtain the short-channel transistor.

2. The method for fabricating a short-channel transistor by mechanically stacking electrodes according to claim 1, characterized in that, In step S1, the cleaning process includes: cleaning the substrate layer with acetone, isopropanol and deionized water in sequence (1) 3-5 times.

3. The method for fabricating a short-channel transistor by mechanically stacking electrodes according to claim 1, characterized in that, In step S1, electrode (2) is obtained by the following steps: A1. After spin coating the negative photoresist onto the substrate layer (1), the substrate layer (1) is transferred to a drying oven at 80°C for vacuum drying to obtain a substrate layer (1) with negative photoresist attached to its surface. A2. After adjusting the shape of the radiation area of ​​the lithography machine, the photoresist is subjected to radiation exposure treatment to obtain several patterned photoresist surfaces of the desired shape. A3. Electron beam evaporation technology is used to deposit the patterned photoresist on the surface. After deposition, the residual photoresist is stripped off to obtain the electrode (2).

4. The method for fabricating a short-channel transistor by mechanically stacking electrodes according to claim 1, characterized in that, In step S3, the method for peeling off the composite structure layer is as follows: use chemical reagents to rinse the connection between the adhesive layer (3) and the substrate layer (1), use tweezers to hold the composite structure layer and the substrate layer (1) respectively, and slowly lift the composite structure layer until it is completely peeled off from the substrate layer (1).

5. The method for fabricating a short-channel transistor by mechanically stacking electrodes according to claim 1, characterized in that, In step S4, the method for transferring the electrode material is as follows: attach one side of the support layer (4) of the required electrode material to the glass plate, use the transfer stage to attach the electrode material to the target carrier (5), apply a pressure of 200-400 Pa in the attached state, and heat to 120-150℃ at the same time, maintain for 5-10 min, and obtain the target carrier (5) modified with electrode material.

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