Apparatus for manufacturing display device

Abstract

The invention relates to an apparatus for manufacturing a display device. An apparatus for manufacturing a display device includes: a substrate; a nozzle including a nozzle hole that ejects a deposition material on the substrate; a crucible connected to the nozzle, the crucible storing a deposition material; the reflector is arranged on the crucible, and the reflector comprises an opening area overlapped with the nozzle; and an angle control member connected to the reflector. The angle control member includes a first member disposed to face the nozzle, a third member disposed to face the substrate, and a second member disposed between the first member and the third member.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0093392 filed in the Korean Intellectual Property Office on July 18, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments relate to an apparatus for manufacturing a display device. Background Art

[0004] Recently, as interest in information display increases, research and development of display devices have been continuously conducted. Summary of the invention

[0005] Embodiments provide a manufacturing apparatus for depositing an organic material on a substrate of a display device.

[0006] However, the embodiments of the present disclosure are not limited to those described herein. The above and other embodiments will become more apparent to those skilled in the art to which the present disclosure belongs by referring to the detailed description of the present disclosure given below.

[0007] According to aspects of the present disclosure, an apparatus for manufacturing a display device may include: a substrate; a nozzle including a nozzle hole for spraying a deposition material on the substrate; a crucible connected to the nozzle, the crucible storing the deposition material; a reflector disposed on the crucible, the reflector including an opening area overlapping the nozzle; and an angle control member connected to the reflector. The angle control member may include a first member disposed to face the nozzle, a third member disposed to face the substrate, and a second member disposed between the first member and the third member.

[0008] The second member may include a heater including a hot wire and applying heat to the first member.

[0009] The first member may include a heat dissipation member having a high emissivity.

[0010] The third member may include a plurality of heat dissipation members each having a low emissivity.

[0011] Each of the plurality of heat dissipating members may be mirror-finished to reflect radiant heat transferred from the heater.

[0012] The angle control member may have an inclination angle of about 40° to about 70°.

[0013] The angle control member may include a first angle control member and a second angle control member spaced apart from each other.

[0014] The first angle control member may have a first inclination angle of about 40° to about 70°, and the second angle control member may have a second inclination angle of about 40° to about 70°.

[0015] The first inclination angle and the second inclination angle may be identical to each other.

[0016] The first inclination angle and the second inclination angle may be different from each other.

[0017] Each of the first angle control member and the second angle control member may include a first portion connected to the reflector and a second portion extending from the first portion toward the substrate. The second portion may have an inclination angle of about 40° to about 70°.

[0018] Each of the first angle control member and the second angle control member may include a curve having a curvature.

[0019] An angle formed by a tangent line contacting an arbitrary point of the curve and a virtual line parallel to the major surface of the reflector may be in the range of about 40° to about 70°.

[0020] Each of the first and second angle control members may include a first portion connected to the reflector and a second portion extending from the first portion toward the nozzle. An angle formed by the first and second portions may be in the range of about 40° to about 70°.

[0021] The apparatus may further include a heater which heats the crucible and is disposed at an outer circumference of the crucible.

[0022] According to another aspect of the present disclosure, there is provided an apparatus for manufacturing a display device, the apparatus comprising: a crucible comprising a receiving portion storing a deposition material to be deposited on a substrate; a heater disposed at an exterior of the crucible, the heater heating the crucible and evaporating the deposition material; a nozzle communicating with the receiving portion, the nozzle comprising a nozzle hole for spraying the deposition material toward the substrate; a reflector disposed between the crucible and the substrate, the reflector preventing heat exchange between the crucible and the substrate; and an angle control member connected to the reflector. The angle control member may include a first member, a second member, and a third member. The second member may include a hot wire and apply heat to the first member.

[0023] The angle control member may have an inclination angle of about 40° to about 70°.

[0024] The first member may face the nozzle, the third member may face the substrate, and the second member may be disposed between the first member and the third member.

[0025] The first member may include a heat dissipation member having a high emissivity, and the third member may include a plurality of heat dissipation members each having a low emissivity.

[0026] Each of the plurality of heat dissipating members may be mirror-finished to reflect heat transferred from the second member. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Exemplary embodiments will now be described more fully below with reference to the accompanying drawings. However, they may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the exemplary embodiments to those skilled in the art.

[0028] In the accompanying drawings, dimensions may be exaggerated for clarity of illustration. It will be understood that when an element is referred to as being "between" two elements, it may be the only element between the two elements, or one or more intervening elements may also be present. The same reference numerals always represent the same elements.

[0029] Figure 1 is a schematic diagram illustrating an apparatus for manufacturing a display device according to an embodiment.

[0030] Figure 2 It is shown Figure 1 Schematic diagram of the method of moving the deposition source is shown in FIG.

[0031] Figure 3 It is shown Figure 2 Schematic perspective view of the deposition source shown in FIG.

[0032] Figure 4 It is shown Figure 3 Schematic plan view of the deposition source shown in .

[0033] Figure 5 It is along Figure 4 A schematic cross-sectional view taken along line II' shown in FIG.

[0034] Fig. 6A , Figure 6B and Figure 6C It is shown Figure 5 An enlarged schematic diagram of the portion EA shown in FIG.

[0035] Figure 7 It is shown Fig. 6A Schematic diagram of the second component shown in .

[0036] Figure 8 , Fig. 9 and Fig.10 Shows Figure 5 Various embodiments of the angle control member shown in and are related to Figure 5 The enlarged schematic diagram of the portion EA shown in FIG.

[0037] Fig.11 is a schematic plan view showing a display apparatus manufactured by using a device according to an embodiment.

[0038] Fig.12 It is shown Fig.11 A schematic cross-sectional view of a display panel shown in FIG.

[0039] Fig.13 It is shown Fig.11 Schematic cross-sectional view of a pixel shown in . DETAILED DESCRIPTION

[0040] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the devices or methods disclosed herein. However, it is apparent that various embodiments can be practiced without these specific details or with one or more equivalent arrangements. Here, various embodiments do not have to be exclusive or limit the present disclosure. For example, the specific shapes, configurations, and characteristics of an embodiment can be used or implemented in other embodiments.

[0041] Unless otherwise specified, the described embodiments should be understood to provide features of the present invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter, individually or collectively referred to as "elements") of various embodiments may be combined, separated, interchanged and / or rearranged in other ways without departing from the present invention.

[0042] The use of cross hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between the elements shown, and / or any other characteristic, attribute, property, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiment may be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described sequence. In addition, the same reference numerals represent the same elements.

[0043] When an element (or layer) is referred to as being "on", "connected to" or "coupled to" another element or layer, it may be directly on, directly connected to or directly coupled to another element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly" "on", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection and / or a fluid connection with or without intervening elements. In addition, the DR1 axis, the DR2 axis and the DR3 axis are not limited to the three axes of a rectangular coordinate system, such as the X-axis, the Y-axis and the Z-axis, and may be interpreted in a broader sense. For example, the DR1 axis, the DR2 axis and the DR3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. In addition, the X-axis, the Y-axis and the Z-axis are not limited to the three axes of a rectangular coordinate system, such as the x-axis, the y-axis and the z-axis, and may be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of A and B" may be interpreted as meaning only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be understood as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0044] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element.

[0045] For the purpose of description, spatial relative terms such as "below", "below", "under", "down", "above", "up", "above", "higher", "side" (e.g., as in "sidewall"), etc. may be used herein, and thereby describe the relationship of one element to another element (or elements) as shown in the drawings. In addition to the orientation depicted in the drawings, spatial relative terms are intended to include different orientations of the device in use, operation and / or manufacture. For example, if the device in the drawings is flipped, the elements described as being "below" or "below" other elements or features will then be oriented "above" the other elements or features. Therefore, the term "below" can include both above and below orientations. In addition, the device can be oriented otherwise (e.g., rotated 90 degrees or in other orientations), and therefore, the spatial relative descriptors used herein should be interpreted accordingly.

[0046] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to also include plural forms, unless the context clearly indicates otherwise. In addition, when used in this specification, the terms "comprises", "comprising", "includes" and / or "including" specify the existence of the features, wholes, steps, operations, elements, components and / or groups thereof described, but do not exclude the existence or addition of one or more other features, wholes, steps, operations, elements, components and / or groups thereof. It is also noted that, as used herein, the terms "substantially", "about" and other similar terms are used as approximate terms rather than as degree terms, and are therefore used to allow for the inherent deviations in the measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0047] Various embodiments are described herein with reference to cross-sectional views and / or exploded views as schematic diagrams of embodiments and / or intermediate structures. As such, variations in the shapes in the figures, such as due to manufacturing techniques and / or tolerances, should be expected. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to the specific illustrated regional shapes, but should include deviations in shapes such as those caused by manufacturing. In this way, the regions shown in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and are therefore not necessarily intended to be limiting.

[0048] As is customary in the art, some embodiments are described and shown in the accompanying drawings for functional blocks, units and / or modules. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electrical circuits (or optical circuits) such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connectors, etc., which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where the blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled by software (e.g., microcode) to perform the various functions discussed herein, and they can be selectively driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or can be implemented as a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. In addition, without departing from the scope of the present invention, each block, unit and / or module in some embodiments can be physically separated into two or more interactive and discrete blocks, units and / or modules. Furthermore, the blocks, units and / or modules in some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the scope of the present invention.

[0049] Figure 1 is a schematic diagram showing an apparatus 1 for manufacturing a display device according to an embodiment.

[0050] refer to Figure 1 The deposition device (hereinafter, also referred to as the device) 1 can deposit a deposition material on a target substrate DS. For example, the target substrate DS can be a substrate of a display device. The deposition material can include an organic material. The deposition material can be deposited on the target substrate DS to form a light-emitting element including an organic light-emitting diode.

[0051] The deposition apparatus 1 may include a chamber CH, a moving plate MP, a mask assembly MK, and a deposition source 100 .

[0052] The chamber CH may have a space (or a closed space) inside it. The inside of the chamber CH may be maintained in a reduced pressure (or low pressure) atmosphere. The moving plate MP, the mask assembly MK, and the deposition source 100 may be disposed in the space inside the chamber CH. The chamber CH may have at least one gate valve GA. For example, the gate valve GA may be disposed at the side surface of the chamber CH. The gate valve GA may open or close the chamber CH. For example, the target substrate DS may enter (or leave) the chamber CH through the gate valve GA.

[0053] The moving plate MP may move in the chamber CH. For example, in a state where an upper portion of the moving plate MP is connected to the ceiling, the moving plate MP may move in the first direction DR1, the second direction DR2, and the third direction DR3. Figure 1 , each of the first direction DR1 and the second direction DR2 crossing the first direction DR1 is defined as a substantially horizontal direction, and the third direction DR3 is defined as a vertical direction.

[0054] The mask assembly MK may be disposed between the target substrate DS and the deposition source 100. The mask assembly MK may overlap the target substrate DS. The mask assembly MK may be supported by a support portion SU disposed inside the chamber CH. The support portion SU may include an electrostatic chuck, a vacuum chuck, or an adhesive chuck that fixes the mask assembly MK. For example, the support portion SU may include a shuttle, etc., which linearly moves the mask assembly MK in one direction by fixing the mask assembly MK.

[0055] Openings OPN may be defined in the mask member MK. The deposition material transferred in the deposition apparatus 1 may be deposited on the target substrate DS by passing through the openings OPN.

[0056] The deposition source 100 may be disposed under the mask assembly MK. The deposition source 100 may contain (or store) a deposition material therein. The deposition source 100 may evaporate or sublimate the deposition material stored in the deposition source 100 and may provide the evaporated or sublimated deposition material to the target substrate DS.

[0057] A cooling member for suppressing (or preventing) a temperature increase of the target substrate DS may be located inside the chamber CH. An alignment device for aligning the target substrate DS and at least one side of the mask assembly MK may be provided inside the chamber CH.

[0058] Figure 2 It is shown Figure 1 Schematic diagram of the method of moving the deposition source 100 shown in FIG. For ease of description, Figure 2 It is shown in Figure 1 The target substrate DS and the deposition source 100 are shown in FIG. 1 , and illustration of other components is omitted.

[0059] refer to Figure 1 and Figure 2 , the target substrate DS may be above the deposition source 100. A surface of the target substrate DS may face the deposition source 100. The target substrate DS may include two sides extending in the first direction DR1 and two sides extending in the second direction DR2.

[0060] When viewed on a plane, the target substrate DS may have a quadrilateral shape, but the embodiment is not limited thereto. In an embodiment, “when viewed on a plane” or “in a plan view” may mean when viewed in a third direction DR3 .

[0061] The deposition source 100 may be spaced apart from the target substrate DS. For example, the deposition source 100 may be spaced apart from the target substrate DS in the third direction DR3 by a distance d. The deposition source 100 may extend in the first direction DR1. The deposition source 100 may move in the second direction DR2.

[0062] In a state where the target substrate DS is fixed, the deposition source 100 may provide a deposition material on the surface of the target substrate DS by moving in the second direction DR2. However, embodiments are not limited thereto. In some embodiments, in a state where the deposition source 100 is fixed, the deposition source 100 may deposit a deposition material on the surface of the target substrate DS while the target substrate DS moves in the second direction DR2. The target substrate DS may be moved by Figure 1 The mobile plate MP shown in FIG. 1 moves.

[0063] Hereinafter, the structure of the deposition source 100 will be described in detail.

[0064] Figure 3 It is shown Figure 2 Schematic perspective view of the deposition source 100 shown in FIG. Figure 4 It is shown Figure 3 A schematic plan view of a deposition source 100 is shown in FIG. Figure 5 It is along Figure 4 A schematic cross-sectional view taken along line II' shown in FIG. Fig. 6A , Figure 6B and Figure 6C It is shown Figure 5 An enlarged schematic diagram of the portion EA shown in FIG. Figure 7 It is shown Fig. 6A Schematic diagram of the second component shown in .

[0065] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , FIG. 6A to FIG. 6C and Figure 7 , the deposition source 100 may include a housing HO, a nozzle NOZ, a crucible CB, and an angle control member AC. The housing HO may include a body BO and a cover CV.

[0066] The body BO may have an empty space therein. The crucible CB may be disposed inside the body BO. The cover CV may be coupled to the body BO. In another example, the cover CV may be separated from the body BO.

[0067] The nozzle NOZ may spray the deposition material into the chamber CH. The nozzle NOZ may be disposed on the housing HO. For example, the nozzle NOZ may be disposed on the cover CV of the housing HO. The nozzle NOZ may be manufactured separately from the housing HO to be coupled to the cover CV. However, the embodiment is not limited thereto. In some embodiments, the nozzle NOZ may be integrated with the cover CV.

[0068] The nozzles NOZ may be arranged along the first direction DR1. The nozzles NOZ adjacent to each other in the first direction DR1 may be spaced apart from each other. Figure 3 and Figure 4 , it is shown that 10 nozzles NOZ are provided on the housing HO. However, the number of nozzles NOZ is not limited thereto.

[0069] The nozzle hole NOH may be defined in each of the nozzles NOZ. The nozzle hole NOH may have a circular shape. However, the embodiment is not limited thereto, and the nozzle hole NOH may be modified into various shapes including a polygonal shape, an elliptical shape, and the like.

[0070] The crucible CB may be disposed inside the housing HO. The crucible CB may have a shape corresponding to the shape of the body BO. The crucible CB may include an internal space in which a deposition material DM is stored or accommodated. The crucible CB may be a component having a length perpendicular to the moving direction of the target substrate DS, and may be variously changed. Considering that high heat is applied to the crucible CB, the crucible CB may be made of a heat-resistant material such as a carbon material, tantalum or an alloy thereof, but embodiments are not limited thereto. In some embodiments, the crucible CB may include a high melting point metal such as tungsten, rhenium, molybdenum, niobium, vanadium, hafnium, zirconium or titanium, or an alloy including the metal.

[0071] The connection portion TU may be located between the crucible CB and the nozzle NOZ. The connection portion TU may have a tubular shape in which a hollow (or hole) is formed, but the embodiment is not limited thereto. The connection portion TU may pass through (or connect) an opening of the crucible CB and a nozzle hole NOH of the nozzle NOZ. The deposition material DM may be discharged from the nozzle NOZ through a flow path defined by the crucible CB, the connection portion TU, and the nozzle hole NOH.

[0072] The deposition source 100 may include a heater HE, an insulation wall IN, and a reflector RF.

[0073] The heater HE may be disposed between the inner wall of the housing HO and the crucible CB. The heater HE may apply heat to the crucible CB. The deposition material DM stored in the crucible CB may evaporate or sublime by the heat (or radiant heat) transferred from the heater HE. The heater HE may be disposed on the side surface of the crucible CB, but the embodiment is not limited thereto. In some embodiments, the heater HE may be disposed on the bottom of the crucible CB.

[0074] The heater HE may be provided with electric energy from the outside to convert the electric energy into heat energy. The heat energy transferred from the heater HE may heat the crucible CB, thereby evaporating the deposition material DM. For example, the heater HE may heat the deposition material DM stored in the crucible CB and discharge the steam of the deposition material DM through the opening of the crucible CB. The heater HE may include, for example, a sheath heating unit / portion or a resistance heating type heating unit / portion, such as a metal wiring line. However, the embodiment is not limited thereto, and various heating methods for evaporating the deposition material DM may be implemented. The heater HE may have various shapes, including a plate shape, a wire shape, a mesh shape, etc.

[0075] The insulating wall IN may surround the crucible CB. The insulating wall IN may prevent the heat within the housing HO from leaking to the outside. Therefore, the influence on the target substrate DS caused by the heat generated in the deposition source 100 may be minimized or prevented.

[0076] The reflector RF may be disposed on the top of the cover CV to expose the nozzle NOZ, and may be coupled to the housing HO. For example, the reflector RF may include an opening area OP corresponding to the nozzle NOZ. The reflector RF may extend along the first direction DR1, and may be formed as a plate through which the nozzle NOZ passes. The reflector RF may include a heat insulating material. The reflector RF may prevent the heat of the crucible CB from leaking upwardly of the housing HO. Therefore, the reflector RF may block the heat leaking toward the target substrate DS disposed above the deposition source 100.

[0077] The angle control member AC can control the deposition area of ​​the deposition material DM sprayed toward the target substrate DS through the nozzle NOZ. For example, in the process of depositing the deposition material DM on the target substrate DS, when the crucible CB or the target substrate DS moves along the second direction DR2, the angle control member AC can control the deposition area of ​​the deposition material DM relative to the second direction DR2. The emission angle of the deposition material DM discharged from the crucible CB can be controlled to be a specific angle or less than a specific angle. Therefore, in the case where deposition is performed in the device 1, the incident angle of the deposition material DM on the target substrate DS can be controlled to be a specific angle or less than a specific angle. Therefore, by limiting / controlling the incident angle of the deposition material DM, the patterning accuracy of the film formed by the mask assembly MK can be improved. The deposition material DM can be prevented from sticking to a portion not included in the target substrate DS and the mask assembly MK, such as the wall surface of the chamber CH.

[0078] The angle control member AC may include a first angle control member AC1 and a second angle control member AC2, which face each other in the second direction DR2 on the cover CV with the nozzle NOZ interposed therebetween and extend along the first direction DR1. The angle control member AC may be coupled to the reflector RF. For example, the first angle control member AC1 may be coupled to one side of the reflector RF, and the second angle control member AC2 may be coupled to the other side of the reflector RF.

[0079] In an embodiment, each of the first and second angle control members AC1 and AC2 may include a first member FM, a second member SM, and a third member THM.

[0080] In each of the first and second angle control members AC1 and AC2, a first member FM may be provided at a surface facing the reflector RF or the nozzle NOZ. The first member FM may be coupled to the reflector RF to control a deposition area of ​​the deposition material DM.

[0081] The first member FM may be formed in a plate shape. The first member FM may include a heat dissipation coating having a high emissivity, thereby improving the emissivity of heat (or radiant heat) generated in the second member SM. For example, the first member FM may be formed as a heat dissipation member on which a heat dissipation coating agent including an infrared emitting powder and a binder is coated, but the embodiment is not limited thereto. In some embodiments, the first member FM may also include a protective layer for protecting and smoothing the surface on which the heat dissipation coating agent is coated. The protective layer may include at least one of silane, an organic resin, a silicon compound, an inorganic binder, an organic / inorganic hybrid binder, and glass material, but the embodiment is not limited thereto.

[0082] The first member FM of the first angle control member AC1 may be tilted relative to a direction perpendicular to the main surface of the reflector RF (e.g., the third direction DR3). The tilt angle θ1 (hereinafter, referred to as the "first tilt angle") of the first member FM relative to the main surface of the reflector RF (e.g., the upper surface parallel to the second direction DR2) may be in the range of about 40° to about 70°. The first member FM of the second angle control member AC2 may be tilted relative to a direction perpendicular to the main surface of the reflector RF (e.g., the third direction DR3). The tilt angle θ2 (hereinafter, referred to as the "second tilt angle") of the first member FM relative to the main surface of the reflector RF may be in the range of about 40° to about 70°.

[0083] The first tilt angle θ1 and the second tilt angle θ2 may be angles set to minimize heat dissipation caused by heat transferred from the opening area OP of the reflector RF to the target substrate DS (or the mask assembly MK). The first tilt angle θ1 and the second tilt angle θ2 may be substantially equal to each other or different from each other. For example, Fig. 6A As shown in , the first inclination angle θ1 and the second inclination angle θ2 may be substantially the same as each other and may have a range of about 40° to about 70°. In some embodiments, the first inclination angle θ1 and the second inclination angle θ2 may be different from each other and may have a range of about 40° to about 70°. For example, Figure 6B As shown in , the first inclination angle θ1 may be greater than the second inclination angle θ2. Figure 6C As shown in , the second inclination angle θ2 may be greater than the first inclination angle θ1.

[0084] In each of the first angle control member AC1 and the second angle control member AC2, the second member SM may be disposed on the first member FM. The second member SM may have a shape corresponding to the shape of the first member FM. For example, the second member SM and the first member FM may have the same inclination angle inclined relative to the third direction DR3. The second member SM may apply heat to the first member FM. The second member SM may be formed in which the heat wire HEW (see Figure 7 ) is inserted into the base layer BSL (see Figure 7 ), but the embodiment is not limited thereto. The base layer BSL may be formed in a plate shape and may be made of at least one of boron, nitride, aluminum oxide, tantalum, and graphite, but the embodiment is not limited thereto.

[0085] The second member SM may apply heat to the first member FM by using a hot wire HEW. Therefore, the surface temperature of the first member FM may be increased by the heat (or radiant heat) transferred from the second member SM, and the first member FM may have a high emissivity to evenly distribute heat. The deposition material DM ejected through the nozzle hole NOH of each nozzle NOZ to be transferred upward therefrom may contact the first member FM of each of the first angle control member AC1 and the second angle control member AC2. When the surface temperature of the first member FM is high, although the deposition material DM is in contact with the first member FM, the deposition material DM may not be stacked on the first member FM and may sublimate (or evaporate) to be transferred toward the target substrate DS through the separation space between the first angle control member AC1 and the second angle control member AC2.

[0086] In an apparatus (or deposition apparatus) for manufacturing a display device having an existing angle control member that does not include the above-mentioned first member FM and second member SM, in the case where a deposition material ejected through a nozzle hole to be transferred upward therefrom contacts the angle control member, a phase change of the deposition material occurs due to the low surface temperature of the angle control member, and the phase of the deposition material changes from a gas phase to a solid phase. Therefore, the deposition material may be deposited on the angle control member. Therefore, the deposition material may be wasted.

[0087] In the above embodiment, the first member FM and the second member SM may be provided to increase the surface temperature of the first member FM so that the deposition material DM may be prevented from being deposited on the first member FM. Therefore, the utilization rate of the deposition material DM and the deposition efficiency of the deposition source 100 may be improved without wasting the deposition material DM.

[0088] In each of the first angle control member AC1 and the second angle control member AC2, the third member THM may be disposed on the second member SM. The second member SM may be disposed between the first member FM and the third member THM. In each of the first angle control member AC1 and the second angle control member AC2, the third member THM may be disposed on a surface facing the target substrate DS (or the mask assembly MK). The third member THM and the first member FM may have the same inclination angle inclined relative to the third direction DR3.

[0089] The third member THM may be formed as a double layer including a first sub-member SUM1 and a second sub-member SUM2 sequentially stacked.

[0090] The first sub-component SUM1 and the second sub-component SUM2 may include a material for blocking the radiant heat generated in the second component SM from being transferred upward therefrom to, for example, the target substrate DS and the mask assembly MK. For example, each of the first sub-component SUM1 and the second sub-component SUM2 may be formed as a heat dissipation component including a material having a low emissivity (e.g., 0.1 or less). When the emissivity of the first sub-component SUM1 and the second sub-component SUM2 is reduced, the heat conduction (or thermal conductivity) caused by the radiation may be reduced, and the amount of radiant heat transferred to the target substrate DS and the mask assembly MK may be reduced. The first sub-component SUM1 and the second sub-component SUM2 may include a material having a low thermal conductivity (e.g., 10 W / mk or less).

[0091] The first sub-component SUM1 and the second sub-component SUM2 may include a metal having low emissivity and low thermal conductivity, such as tantalum, molybdenum, tungsten, nickel, cobalt, or stainless steel. For example, the first sub-component SUM1 and the second sub-component SUM2 may include Al 2 O 3 , boron nitride (BN), pyrolytic boron nitride (PBN) formed by chemical vapor deposition (CVD), such as SiO 2 Inorganic materials, inorganic fiber insulators, etc. In an embodiment, in order to reduce the emissivity of the first sub-component SUM1 and the second sub-component SUM2, each of the first sub-component SUM1 and the second sub-component SUM2 may be mirror-polished so that the roughness of its surface may be reduced. The mirror-polished first sub-component SUM1 and the second sub-component SUM2 may reflect the radiant heat transferred from the second component SM upward thereunder, thereby preventing the radiant heat from being transferred toward the target substrate DS and the mask assembly MK located above the angle control member AC.

[0092] As described above, in each of the first angle control member AC1 and the second angle control member AC2, the third member THM including the first sub-member SUM1 and the second sub-member SUM2 may be disposed on the second member SM, thereby preventing radiant heat from advancing toward the mask assembly MK and the target substrate DS located thereover. Therefore, by preventing deformation of the mask assembly MK and the target substrate DS, the failure rate of the display device is reduced, thereby improving the productivity of the display device.

[0093] In the above embodiment, it has been described that the third member THM of each of the first angle control member AC1 and the second angle control member AC2 is formed as a double layer including the first sub-member SUM1 and the second sub-member SUM2. However, the embodiment is not limited thereto. The third member THM may be formed in the form of a multilayer including a heat dissipation member having a low emissivity.

[0094] As described above, each of the first angle control member AC1 and the second angle control member AC2 including the first member FM, the second member SM and the third member THM may have a shape corresponding to the shape of the first member FM. For example, each of the first angle control member AC1 and the second angle control member AC2 may have an inclination angle of about 40° to about 70° relative to the main surface of the reflector RF.

[0095] Figure 8 , Fig. 9 and Fig.10 Shows Figure 5 The various embodiments of the angle control member AC shown in FIG. Figure 5 The enlarged schematic diagram of the portion EA shown in FIG.

[0096] Figure 8 , Fig. 9 and Fig.10 The shape of the angle control member AC is shown. Fig. 6A Modifications.

[0097] about Figure 8 , Fig. 9 and Fig.10 With reference to the embodiment shown in FIG. 1 , parts different from those of the above-described embodiment will be described to avoid redundancy.

[0098] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 8 , each of the first angle control member AC1 and the second angle control member AC2 may include a first portion and a second portion. For example, the first angle control member AC1 may include a (1-1) portion (or first portion) AC1a and a (2-1) portion (or second portion) AC1b, and the second angle control member AC2 may include a (1-2) portion (or first portion) AC2a and a (2-2) portion (or second portion) AC2b.

[0099] The (1-1) portion AC1a may be connected (or coupled) to the surface of the reflector RF and extend in a direction perpendicular to the main surface of the reflector RF (e.g., the third direction DR3). The (2-1) portion AC1b may extend from the (1-1) portion AC1a toward the target substrate DS (or the mask assembly MK). The (2-1) portion AC1b may extend in a direction different from the extension direction of the (1-1) portion AC1a. For example, the (2-1) portion AC1b may extend from the (1-1) portion AC1a in a direction toward the nozzle NOZ to be inclined at a specific angle. In an embodiment, the inclination angle θ3 (hereinafter, referred to as the "third inclination angle") of the (2-1) portion AC1b may be in the range of about 40° to about 70°.

[0100] The (1-2) portion AC2a may be connected (or coupled) to the surface of the reflector RF and extend in a direction perpendicular to the main surface of the reflector RF (e.g., the third direction DR3). The (2-2) portion AC2b may extend from the (1-2) portion AC2a toward the target substrate DS. The (2-2) portion AC2b may extend in a direction different from the extension direction of the (1-2) portion AC2a. For example, the (2-2) portion AC2b may extend from the (1-2) portion AC2a in a direction toward the nozzle NOZ to be inclined at a specific angle. In an embodiment, the inclination angle θ4 (hereinafter, referred to as the "fourth inclination angle") of the (2-2) portion AC2b may be in the range of about 40° to about 70°.

[0101] The third inclination angle θ3 and the fourth inclination angle θ4 may be substantially equal to or different from each other within a range of about 40° to about 70°.

[0102] The (1-1) portion AC1a and the (1-2) portion AC2a may face each other and may be spaced apart from each other with the nozzle NOZ interposed therebetween. The first member FM of each of the (1-1) portion AC1a and the (1-2) portion AC2a may face the reflector RF or the nozzle NOZ. The third member THM of each of the (1-1) portion AC1a and the (1-2) portion AC2a may be disposed at the outermost portion. The second member SM of each of the (1-1) portion AC1a and the (1-2) portion AC2a may be disposed between the first member FM and the third member THM.

[0103] The (2-1) portion AC1b and the (2-2) portion AC2b may be spaced apart from each other. The first member FM of each of the (2-1) portion AC1b and the (2-2) portion AC2b may face the reflector RF or the nozzle NOZ. The third member THM of each of the (2-1) portion AC1b and the (2-2) portion AC2b may face the target substrate DS. The second member SM of each of the (2-1) portion AC1b and the (2-2) portion AC2b may be disposed between the first member FM and the third member THM.

[0104] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Fig. 9 , each of the first angle control member AC1 and the second angle control member AC2 may be formed to have a curved surface that is rounded from the reflector RF toward the target substrate DS. For example, each of the first angle control member AC1 and the second angle control member AC2 may include a curve having a specific curvature. The inclination angle θ5 (hereinafter referred to as the "fifth inclination angle") formed by the first tangent line TL1 in contact with an arbitrary point P1 of the curve of the first angle control member AC1 and the virtual line CL parallel to the main surface of the reflector RF may be in the range of about 40° to about 70°. The inclination angle θ6 (hereinafter referred to as the "sixth inclination angle") formed by the second tangent line TL2 in contact with an arbitrary point P2 of the curve of the second angle control member AC2 and the virtual line CL may be in the range of about 40° to about 70°. The fifth inclination angle θ5 and the sixth inclination angle θ6 may be substantially equal to or different from each other in the range of about 40° to about 70°.

[0105] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Fig.10 , the first angle control member AC1 may include a (1-1) portion AC1a and a (2-1) portion AC1b, and the second angle control member AC2 may include a (1-2) portion AC2a and a (2-2) portion AC2b.

[0106] The (1-1) portion AC1a may be connected to the reflector RF and may extend in the third direction DR3 (or a direction perpendicular to the main surface of the reflector RF). The (2-1) portion AC1b may be connected to the (1-1) portion AC1a and extend from the (1-1) portion AC1a in a direction toward the nozzle NOZ (or the reflector RF) to be inclined at a specific angle. In an embodiment, the inclination angle θ7 (hereinafter, referred to as the "seventh inclination angle") of the (2-1) portion AC1b relative to the (1-1) portion AC1a may be in the range of about 40° to about 70°. The (2-1) portion AC1b may be positioned closer to the nozzle NOZ in the second direction DR2 than the (1-1) portion AC1a.

[0107] The (1-2) portion AC2a may be connected to the reflector RF and extend in a third direction DR3 (or a direction perpendicular to the main surface of the reflector RF). The (2-2) portion AC2b may be connected to the (1-2) portion AC2a and may extend from the (1-2) portion AC2a in a direction toward the nozzle NOZ (or the reflector RF) to be inclined at a specific angle. In an embodiment, the inclination angle θ8 (hereinafter referred to as the "eighth inclination angle") of the (2-2) portion AC2b relative to the (1-2) portion AC2a may be in a range of about 40° to about 70°. The (2-2) portion AC2b may be positioned closer to the nozzle NOZ in the second direction DR2 than the (1-2) portion AC2a.

[0108] The seventh inclination angle θ7 and the eighth inclination angle θ8 may be substantially equal to or different from each other within a range of about 40° to about 70°.

[0109] Fig.11 is a schematic plan view showing a display device DD manufactured by using an apparatus according to an embodiment. Fig.12 It is shown Fig.11 Schematic cross-sectional view of the display panel DP shown in FIG.

[0110] exist Fig.11 and Fig.12 , for convenience of description, the structure of the display panel DP of the display device DD is briefly illustrated based on the display area DA in which an image is displayed.

[0111] refer to Fig.11 and Fig.12 The display panel DP (or display device DD) according to the embodiment may be formed in various shapes. For example, the display panel DP may be formed in a rectangular plate shape having two pairs of sides parallel to each other, but the embodiment is not limited thereto. In the case where the display panel DP is formed in a rectangular plate shape, any one of the two pairs of sides may be longer than the other pair of sides.

[0112] At least a portion of the display panel DP may have flexibility, and may be folded at the portion having flexibility. However, the embodiment is not limited thereto.

[0113] The display panel DP may display an image. A self-luminous display panel or a non-self-luminous display panel may be used as the display panel DP.

[0114] The display panel DP may include a substrate SUB and pixels PXL disposed on the substrate SUB.

[0115] The substrate SUB may include a transparent insulating material so that light can be transmitted through the substrate SUB, but the embodiment is not limited thereto. The substrate SUB may be a rigid substrate or a flexible substrate.

[0116] The rigid substrate may be one of a glass substrate, a quartz substrate, a glass ceramic substrate, and a crystalline glass substrate.

[0117] The flexible substrate may be one of a film substrate and a plastic substrate including a polymer organic material. For example, the flexible substrate may include at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyether sulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate.

[0118] One area of ​​the substrate SUB may be set as the display area DA so that the pixel PXL is disposed in the display area DA, and another area of ​​the substrate SUB may be set as the non-display area NDA. For example, the substrate SUB may include the display area DA including the pixel area PXA in which the corresponding pixel PXL is disposed, and the non-display area NDA is disposed at the periphery of the display area DA (or disposed adjacent to the display area DA).

[0119] The non-display area NDA may be adjacent to the display area DA. The non-display area NDA may be disposed at least one side of the display area DA. For example, the non-display area NDA may surround the periphery (or edge portion) of the display area DA. A line portion connected to each pixel PXL and a driver connected to the line portion and driving the pixel PXL may be formed in the non-display area NDA.

[0120] Each of the pixels PXL may be arranged in a plurality to be arranged in a matrix form along rows extending in a first direction DR1 and columns extending in a second direction DR2 intersecting the first direction DR1. However, the arrangement form of the pixels PXL is not limited, and the pixels PXL may be arranged in various forms. In some embodiments, in the case where the pixels PXL are arranged in a plurality, the pixels PXL may be arranged in different areas (or sizes). For example, in the case where the pixels PXL have different colors of light emitted therefrom, the pixels PXL may be arranged to have different areas (or sizes) or different shapes with respect to different colors.

[0121] The driver may provide a specific signal and a specific voltage to each pixel PXL through the line portion, thereby controlling the driving of the pixel PXL.

[0122] The display panel DP (or each of the pixels PXL) may include a pixel circuit layer PCL, a display element layer DPL, and an encapsulation layer TFE on a substrate SUB.

[0123] The pixel circuit layer PCL may be disposed on a substrate SUB and include a transistor and a signal line connected to the transistor. For example, the transistor may have a form in which an active pattern layer (or semiconductor pattern layer), a gate electrode, a source electrode, and a drain electrode are sequentially stacked and an insulating layer is interposed therebetween. The semiconductor pattern layer may include amorphous silicon, polycrystalline silicon, low-temperature polycrystalline silicon, an organic semiconductor, and / or an oxide semiconductor. The gate electrode, the source electrode, and the drain electrode may include at least one of aluminum (Al), copper (Cu), titanium (Ti), and molybdenum (Mo), but the embodiment is not limited thereto. For example, the pixel circuit layer PCL may include at least one insulating layer.

[0124] The display element layer DPL may be disposed on the pixel circuit layer PCL. The display element layer DPL may include a light emitting element that emits light. The light emitting element may be, for example, an organic light emitting diode.

[0125] The encapsulation layer TFE may be selectively disposed on the display element layer DPL. The encapsulation layer TFE may be an encapsulation substrate or may have the form of an encapsulation film formed into multiple layers. In the case where the encapsulation layer TFE has the form of an encapsulation film, the encapsulation layer TFE may include an inorganic layer and / or an organic layer. For example, the encapsulation layer TFE may have a form in which an inorganic layer, an organic layer, and an inorganic layer are sequentially stacked. The encapsulation layer TFE may prevent external air and moisture from penetrating (or permeating) into the display element layer DPL and the pixel circuit layer PCL.

[0126] Fig.13 It is shown Fig.11 A schematic cross-sectional view of a pixel PXL shown in FIG.

[0127] exist Fig.13In the present invention, parts different from those of the above-described embodiment will be described to avoid redundancy.

[0128] refer to Fig.11 , Fig.12 and Fig.13 , the pixel PXL may be located in a pixel area PXA of the display area DA. The pixel area PXA may include an emission area EMA and a non-emission area NEA.

[0129] The pixel PXL (or the display panel DP) may include a substrate SUB, a pixel circuit layer PCL, a display element layer DPL, and an encapsulation layer TFE.

[0130] The pixel circuit layer PCL and the display element layer DPL may be disposed on the surface of the substrate SUB to overlap each other. For example, the pixel area PXA of the substrate SUB may include a pixel circuit layer PCL disposed on the surface of the substrate SUB and a display element layer DPL disposed on the pixel circuit layer PCL. However, in some embodiments, the mutual positions of the pixel circuit layer PCL and the display element layer DPL on the substrate SUB may vary.

[0131] The substrate SUB may include a transparent insulating material so that light can be transmitted through the substrate SUB. The substrate SUB may be a rigid substrate or a flexible substrate.

[0132] A circuit element (e.g., transistor T) disposed on the substrate SUB and electrically connected to the light emitting element LD may be disposed in the pixel circuit layer PCL. At least one insulating layer may be disposed in the pixel circuit layer PCL. The insulating layer may include a buffer layer BFL, a gate insulating layer GI, an interlayer insulating layer ILD, a passivation layer PSV, and a via layer VIA sequentially stacked on the substrate SUB along a third direction DR3.

[0133] The buffer layer BFL may be disposed (eg, completely disposed) on the substrate SUB. The buffer layer BFL may prevent impurities from diffusing (or penetrating) into the transistor T. The buffer layer BFL may be an inorganic insulating layer including an inorganic material. For example, the buffer layer BFL may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) or includes at least one of aluminum oxide (AlO x ) of the metal oxide. The buffer layer BFL may be formed as a single layer. In another example, the buffer layer BFL may be formed as a multilayer including at least two layers. In the case where the buffer layer BFL is provided as a multilayer, the multilayer may be formed of the same material or of different materials. Depending on the material of the substrate SUB, process conditions, etc., the buffer layer BFL may be omitted.

[0134] The transistor T may be disposed on the buffer layer BFL. The transistor T may include a semiconductor pattern layer SCP, a gate electrode GE, a first terminal TE1, and a second terminal TE2.

[0135] The semiconductor pattern layer SCP may be a semiconductor pattern layer made of polysilicon, amorphous silicon, an oxide semiconductor, etc. The semiconductor pattern layer SCP may include a first contact region (or source region) in contact with the first terminal TE1 and a second contact region (or drain region) in contact with the second terminal TE2. For example, the semiconductor pattern layer SCP may include a channel region, the channel region being located between the first contact region and the second contact region and overlapping with the gate electrode GE. The channel region may be an intrinsic semiconductor pattern layer not doped with impurities, and each of the first contact region and the second contact region may be a semiconductor pattern layer doped with impurities.

[0136] The gate insulating layer GI may be disposed and / or formed (eg, completely disposed and / or formed) on the semiconductor pattern layer SCP and the buffer layer BFL.

[0137] The gate electrode GE may be disposed on the channel region of the semiconductor pattern layer SCP, with the gate insulating layer GI interposed therebetween. The gate electrode GE may include a low resistance material. For example, the gate electrode GE may include a conductive material including molybdenum, aluminum, copper, titanium, etc., and may be formed as a multilayer or single layer including the above materials.

[0138] The gate insulating layer GI located between the semiconductor pattern layer SCP and the gate electrode GE may include the same material as the above-mentioned buffer layer BFL, or include (or selected from) materials such as the material of the buffer layer BFL. For example, the gate insulating layer GI may be an inorganic insulating layer including an inorganic material. In some embodiments, in the manufacturing process of the gate electrode GE, the gate insulating layer GI may be etched together with the base conductive material of the gate electrode GE to be disposed only on the bottom of the gate electrode GE. The gate insulating layer GI may have the same width as the gate electrode GE located on top thereof, but the embodiment is not limited thereto.

[0139] An interlayer insulating layer ILD may be disposed on the gate electrode GE and the gate insulating layer GI.

[0140] The interlayer insulating layer ILD may include the same material as the above-described buffer layer BFL, or include (or selected from) materials such as the material of the buffer layer BFL. For example, the interlayer insulating layer ILD may be an inorganic insulating layer including an inorganic material.

[0141] The first terminal TE1 and the second terminal TE2 may be arranged and / or formed on the interlayer insulating layer ILD. The first terminal TE1 (or source electrode) may contact the first contact area of ​​the semiconductor pattern layer SCP through a contact hole that passes through the interlayer insulating layer ILD and the gate insulating layer GI in sequence. The second terminal TE2 (or drain electrode) may contact the second contact area of ​​the semiconductor pattern layer SCP through a contact hole that passes through the interlayer insulating layer ILD and the gate insulating layer GI in sequence. The first terminal TE1 and the second terminal TE2 may include a material having excellent electrical conductivity. For example, the first terminal TE1 and the second terminal TE2 may include a conductive material including molybdenum, aluminum, copper, titanium, etc., and may be formed as a multilayer or a single layer including the above-mentioned materials.

[0142] The bottom metal pattern layer BML may be disposed under the transistor T. The bottom metal pattern layer BML may be a conductive layer disposed between the substrate SUB and the buffer layer BFL, and may include the same material as the gate electrode GE, or include (or selected from) the material (such as the material of the gate electrode GE). The bottom metal pattern layer BML may include a material (such as the material of the first terminal TE1 and the second terminal TE2). The bottom metal pattern layer BML may overlap with the transistor T. In some embodiments, the bottom metal pattern layer BML may be electrically connected to the transistor T to stabilize the channel region of the transistor T.

[0143] A passivation layer PSV may be disposed and / or formed on the transistor T and the interlayer insulating layer ILD. A portion of the passivation layer PSV may be removed to expose a portion of the first terminal TE1. The passivation layer PSV may include the same material as the buffer layer BFL, or include (or selected from) a material such as the material of the buffer layer BFL.

[0144] The via layer VIA may be disposed and / or formed on the passivation layer PSV. The via layer VIA may be an inorganic insulating layer including an inorganic material or an organic insulating layer including an organic material. The inorganic insulating layer may include, for example, silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ) and aluminum oxide (AlO x ). The organic insulating layer may include, for example, at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene resin. In an embodiment, the through-hole layer VIA may be an organic insulating layer including an organic material (or substance). The through-hole layer VIA may be partially opened to expose the first terminal TE1 exposed by the passivation layer PSV.

[0145] The display element layer DPL may be disposed and / or formed on the via layer VIA.

[0146] The display element layer DPL may include a light emitting element LD and a pixel defining layer PDL. The light emitting element LD may include a first electrode AE, a light emitting layer EML, and a second electrode CE. For example, the light emitting element LD may further include a common layer disposed between the first electrode AE ​​and the light emitting layer EML or between the light emitting layer EML and the second electrode CE.

[0147] In an embodiment, the substrate SUB, the pixel circuit layer PCL, the pixel defining layer PDL, and the first electrode AE ​​may include a reference Figures 1 to 5 The target substrate DS is described.

[0148] The first electrode AE ​​(or pixel electrode) may be disposed and / or formed on the through-hole layer VIA. The first electrode AE ​​may be an anode of the light-emitting element LD. The first electrode AE ​​may be connected (e.g., electrically connected) to the first terminal TE1 of the transistor T. The first electrode AE ​​may include a conductive material (or substance). The conductive material may include an opaque metal. The opaque metal may include, for example, metals such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti) and alloys thereof. However, the material of the first electrode AE ​​is not limited to the above-mentioned embodiments. In some embodiments, the first electrode AE ​​may include a transparent conductive material (or substance). The transparent conductive material (or substance) may include conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium zinc oxide (IGZO) or indium tin zinc oxide (ITZO), conductive polymers such as poly (3,4-ethylenedioxythiophene) (PEDOT), and the like. In the case where the first electrode AE ​​includes a transparent conductive material (or substance), a separate conductive layer made of an opaque metal may be added for reflecting light emitted from the light emitting layer EML in an image display direction of the display device DD (or an upper direction of the encapsulation layer TFE).

[0149] The pixel defining layer PDL may be disposed and / or formed on the first electrode AE. The pixel defining layer PDL may include an opening exposing an area of ​​the first electrode AE ​​and covering an edge portion of the first electrode AE. The pixel defining layer PDL may define an emission area EMA of the pixel PXL. The pixel defining layer PDL may include an organic insulating layer made of an organic material. The organic material may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and the like. In some embodiments, the pixel defining layer PDL may include a light absorbing material or have a light absorber coated thereon to absorb light introduced (or incident) from the outside. For example, the pixel defining layer PDL may include a carbon-based black pigment. However, embodiments are not limited thereto.

[0150] The light emitting layer EML may be disposed on top of a region of the first electrode AE ​​exposed by the opening of the pixel defining layer PDL. The light emitting layer EML may include a light generating layer that generates specific light and includes a high molecular organic material or a low molecular organic material. The light emitting layer EML may be formed of at least one of materials that emit red light, green light, and blue light, and include a fluorescent material or a phosphorescent material. The light emitting layer EML may emit light in response to a potential difference between the first electrode AE ​​and the second electrode CE.

[0151] For example, the light emitting layer EML may further include a common layer in addition to the light generating layer. The common layer may include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0152] Figures 1 to 5 The device 1 shown in the figure can form various layers on the target substrate DS. The device 1 can form at least one layer of multiple layers including the light-emitting layer EML on the target substrate DS. For example, the device 1 can form at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0153] The second electrode CE may be disposed and / or formed on the light emitting layer EML.

[0154] The second electrode CE (or common electrode) may be commonly arranged and / or formed in the pixel PXL. The second electrode CE may be arranged and / or formed in a plate shape throughout the entire display area DA, but the embodiment is not limited thereto. The second electrode CE may be a thin metal layer having a thickness such that light emitted from the light-emitting layer EML may be transmitted through it. The second electrode CE may be formed of a metal material or of a transparent conductive material to have a relatively thin thickness. For example, the second electrode CE may include at least one of various transparent conductive materials, the transparent conductive material including indium tin oxide, indium zinc oxide, indium tin zinc oxide, aluminum zinc oxide, gallium zinc oxide, zinc tin oxide, and gallium tin oxide, and may be formed to be substantially transparent or translucent to meet a predetermined transmittance. Therefore, the light emitted from the light-emitting layer EML located on the bottom of the second electrode CE may be emitted upward from the encapsulation layer TFE by passing through the second electrode CE.

[0155] The encapsulation layer TFE may include a first encapsulation layer ENC1, a second encapsulation layer ENC2, and a third encapsulation layer ENC3 sequentially stacked on the second electrode CE. The first encapsulation layer ENC1 may be formed on the display element layer DPL (or the second electrode CE), and may be positioned throughout at least a portion of the display area DA and the non-display area NDA. The second encapsulation layer ENC2 may be formed on the first encapsulation layer ENC1, and may be positioned throughout at least a portion of the display area DA and the non-display area NDA. The third encapsulation layer ENC3 may be formed on the second encapsulation layer ENC2, and may be positioned throughout at least a portion of the display area DA and the non-display area NDA. In some embodiments, the third encapsulation layer ENC3 may be positioned throughout the entire display area DA and the non-display area NDA.

[0156] Each of the first encapsulation layer ENC1 and the third encapsulation layer ENC3 may be formed as an inorganic layer including an inorganic material, and the second encapsulation layer ENC2 may be formed as an organic layer including an organic material. The inorganic layer may include, for example, silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), etc. The organic layer may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, polyester resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0157] According to the present disclosure, the deposition material (or deposition substance) ejected from the nozzle may be prevented from being deposited on the angle control member, thereby reducing the loss of the deposition material, so that the deposition efficiency may be improved.

[0158] According to the present disclosure, a mirror-finished heat dissipation member may be disposed outside the angle control member, thereby reducing or minimizing the transfer of heat generated in the deposition source and the angle control member to the substrate and the mask. Therefore, deformation of the substrate and the mask may be reduced.

[0159] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications may be made to the embodiments without departing substantially from the principles, spirit and scope of the present disclosure. Therefore, the disclosed embodiments are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. An apparatus for manufacturing a display device, the apparatus comprising: substrate; a nozzle including a nozzle hole for spraying a deposition material onto the substrate; a crucible connected to the nozzle, the crucible storing the deposition material; a reflector disposed on the crucible, the reflector comprising an opening area overlapping the nozzle; as well as An angle control member connected to the reflector, wherein The angle control member comprises: a first member, arranged to face the nozzle, a third member disposed to face the substrate, and The second component is disposed between the first component and the third component.

2. The device according to claim 1, wherein: The second member includes a heater including a hot wire and applying heat to the first member.

3. The device according to claim 2, wherein: The first member includes a heat dissipation member having a high emissivity.

4. The device according to claim 2, wherein: The third member includes a plurality of heat dissipation members each having a low emissivity.

5. The device according to claim 4, wherein: Each of the plurality of heat dissipating members is mirror-finished to reflect radiant heat transferred from the heater.

6. The device according to claim 1, wherein: The angle control member has an inclination angle of 40° to 70°.

7. The device according to claim 6, wherein: The angle control member includes a first angle control member and a second angle control member that are spaced apart from each other.

8. The device according to claim 7, wherein: The first angle control member has a first inclination angle of 40° to 70°, and The second angle control member has a second inclination angle of 40° to 70°.

9. The apparatus according to claim 1, further comprising: A heater heats the crucible and is disposed at an outer circumference of the crucible.

10. An apparatus for manufacturing a display device, the apparatus comprising: a crucible including a receiving portion storing a deposition material to be deposited on a substrate; a heater disposed at an exterior of the crucible, the heater heating the crucible and evaporating the deposition material; a nozzle, connected to the receiving portion, the nozzle comprising a nozzle hole for spraying the deposition material toward the substrate; a reflector disposed between the crucible and the substrate, the reflector preventing heat exchange between the crucible and the substrate; as well as An angle control member connected to the reflector, wherein The angle control member includes a first member, a second member and a third member, and The second member includes a hot wire and applies heat to the first member.

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