Optical proximity correction method and system and photomask manufacturing method

Abstract

The invention relates to an optical proximity correction method and system and a photomask manufacturing method. The optical proximity correction method comprises the following steps: acquiring a photomask design layout, and determining a one-dimensional region and a two-dimensional region in the photomask design layout; taking the pattern in the one-dimensional area as a first target pattern for optical proximity correction, and performing first optical proximity correction on the first target pattern by adopting a one-dimensional optical proximity correction model to obtain a first reference layout of the photomask; taking the pattern in the two-dimensional area as a second target pattern for optical proximity correction, and performing second optical proximity correction on the second target pattern by adopting the two-dimensional optical proximity correction model to obtain a second reference layout of the photomask; and combining the photomask first reference layout and the photomask second reference layout to obtain a photomask layout. The optical proximity correction method is beneficial to saving photomask cost and reducing research and development cost and process cost.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated circuits, and in particular to an optical proximity correction method and system thereof, and a mask manufacturing method. Background Art

[0002] Dynamic Random Access Memory (DRAM) is a semiconductor memory that can write and read data randomly at high speed and is widely used in data storage devices or apparatuses.

[0003] However, the one-dimensional and two-dimensional patterns in DRAM have different requirements for line edge roughness (LER), critical dimension uniformity (CDU), and process window (PW). Therefore, in order to improve the production feasibility of DRAM, it is often necessary to design mask patterns for one-dimensional patterns and two-dimensional patterns respectively for double exposure. This easily leads to increased mask costs, R&D costs, and process costs. Summary of the invention

[0004] Based on this, the embodiments of the present disclosure provide an optical proximity correction method and system thereof, and a mask production method, which are beneficial to saving mask costs and reducing R&D costs and process costs, while improving the efficiency of optical proximity correction (Manual Optical Proximity Correction, referred to as Manual OPC), so as to effectively improve DRAM production efficiency and production yield.

[0005] In order to achieve the above objectives, on the one hand, some embodiments of the present disclosure provide an optical proximity correction method, comprising the following steps.

[0006] A mask design layout is obtained, and a one-dimensional region and a two-dimensional region in the mask design layout are determined.

[0007] The pattern in the one-dimensional area is used as the first target pattern for optical proximity correction, and a one-dimensional optical proximity correction model is used to perform a first optical proximity correction on the first target pattern to obtain a first reference layout of the mask.

[0008] The pattern in the two-dimensional area is used as a second target pattern for optical proximity correction, and a two-dimensional optical proximity correction model is used to perform a second optical proximity correction on the second target pattern to obtain a second reference pattern of the mask.

[0009] The first reference layout of the mask and the second reference layout of the mask are combined to obtain a mask layout.

[0010] In some embodiments, determining the one-dimensional area and the two-dimensional area in the mask design layout includes: obtaining a one-dimensional pattern definition layer; aligning and overlapping the one-dimensional pattern definition layer and the mask design layout; wherein the area of ​​the mask design layout covered by the pattern in the one-dimensional pattern definition layer is the one-dimensional area, and the area of ​​the mask design layout not covered by the pattern in the one-dimensional pattern definition layer is the two-dimensional area.

[0011] In some embodiments, the merging of the first reference layout of the mask and the second reference layout of the mask to obtain the mask layout includes: performing optical manufacturability checks on the first reference layout of the mask and the second reference layout of the mask, respectively; after the optical manufacturability checks of the first reference layout of the mask and the second reference layout of the mask are qualified, merging the first reference layout of the mask and the second reference layout of the mask to obtain the mask layout.

[0012] In some embodiments, the optical proximity correction method further includes: taking the pattern in the one-dimensional area as the first target pattern for optical proximity correction and using the one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, taking the pattern in the two-dimensional area as the optical environment reference factor for the first optical proximity correction; taking the pattern in the two-dimensional area as the second target pattern for optical proximity correction and using the two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, taking the first reference pattern of the mask as the optical environment reference factor for the second optical proximity correction.

[0013] In some embodiments, a minimum distance between the pattern within the one-dimensional area and the pattern within the two-dimensional area is smaller than the optical influence range of the optical proximity correction.

[0014] In some other embodiments, the minimum distance between the pattern in the one-dimensional region and the pattern in the two-dimensional region is greater than the optical influence range of the optical proximity correction. A first optical proximity correction is performed on the first target pattern using the one-dimensional optical proximity correction model, and a second optical proximity correction is performed on the second target pattern using the two-dimensional optical proximity correction model, simultaneously.

[0015] In some embodiments, the first target pattern and the second target pattern are located in the same layer. The one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are established based on the same process parameters and are debugged based on the same reference standard measurement point.

[0016] On the other hand, the disclosed embodiment also provides an optical proximity correction system, including: a pattern recognition unit, a pattern correction unit and a pattern processing unit. The pattern recognition unit is configured to: obtain a mask design layout, and determine a one-dimensional area and a two-dimensional area in the mask design layout. The pattern correction unit is connected to the pattern recognition unit, and is configured to: use the pattern in the one-dimensional area as the first target pattern for optical proximity correction, use a one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, and obtain a first reference layout of the mask; use the pattern in the two-dimensional area as the second target pattern for optical proximity correction, use a two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, and obtain a second reference layout of the mask. The pattern processing unit is connected to the pattern correction unit, and is configured to: merge the first reference layout of the mask and the second reference layout of the mask to obtain the mask layout.

[0017] In some embodiments, the optical proximity correction system further includes: a pattern detection unit. The pattern detection unit is connected to the pattern correction unit and the pattern processing unit respectively, and is configured to: perform optical manufacturability inspection on the first reference layout of the mask and the second reference layout of the mask respectively, so as to send a layout merging instruction to the pattern processing unit after the optical manufacturability inspection of the first reference layout of the mask and the second reference layout of the mask is qualified.

[0018] On the other hand, the embodiments of the present disclosure further provide a method for manufacturing a mask, so as to manufacture a mask according to the mask pattern obtained in the optical proximity correction method described in some of the aforementioned embodiments, so as to form the mask pattern in the mask.

[0019] The optical proximity correction method and system thereof, and the mask manufacturing method provided by the embodiments of the present disclosure are as described above. In the embodiments of the present disclosure, the one-dimensional area and the two-dimensional area in the mask design layout can be distinguished, so that the one-dimensional optical proximity correction model is corrected for the pattern in the one-dimensional area to obtain the first reference layout of the mask, and the two-dimensional optical proximity correction model is corrected for the pattern in the two-dimensional area to obtain the second reference layout of the mask, and then the corrected first reference layout of the mask and the second reference layout of the mask are merged to obtain the mask layout. In this way, the embodiments of the present disclosure can correct and merge the different optical proximity correction models applied to the patterns in the one-dimensional area and the two-dimensional area to obtain the mask layout, so that there is no need to provide independent mask design layouts and masks for the one-dimensional graphics and the two-dimensional graphics respectively and perform corresponding processes. Therefore, the embodiments of the present disclosure can effectively save the mask cost and reduce the R&D cost and process cost, etc., while improving the efficiency of the manual optical proximity correction (Manual Optical Proximity Correction, referred to as Manual OPC), thereby effectively improving the production efficiency and production yield of DRAM. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 is a flow chart of an optical proximity correction method provided in some embodiments;

[0022] Figure 2 A schematic diagram of the structure of a Block and a Chip in a DRAM provided in some embodiments;

[0023] Figure 3 for Figure 1 A schematic diagram of an execution process of step S100 in the optical proximity correction method is shown;

[0024] Figure 4 Figure (a) is a schematic diagram of the distribution of patterns in a one-dimensional region provided in some embodiments;

[0025] Figure 4 Figure (b) is a schematic diagram of the distribution of patterns in a two-dimensional area provided in some embodiments;

[0026] Figure 5 for Figure 1 A schematic diagram of another execution process of step S100 in the optical proximity correction method is shown;

[0027] Figure 6 is a flow chart of an optical proximity correction method provided in some other embodiments;

[0028] Figure 7 is a flow chart of an optical proximity correction method provided in yet other embodiments;

[0029] Figure 8 is a structural example diagram of an optical proximity correction system provided in some embodiments;

[0030] Fig. 9 FIG. 4 is a diagram showing an example structure of another optical proximity correction system provided in some embodiments.

[0031] Description of reference numerals:

[0032] Chip-chip; Cell-array cell, Peri-edge region, R-functional region; SA-sensing amplifier circuit, SWD-word line driving circuit; L-one-dimensional pattern definition layer; F0-one-dimensional pattern definition pattern, F1-one-dimensional pattern, F2-two-dimensional pattern;

[0033] 1- pattern recognition unit, 2- pattern correction unit, 3- pattern processing unit, 4- pattern detection unit;

[0034] 21 - one-dimensional pattern correction module, 22 - two-dimensional pattern correction module. DETAILED DESCRIPTION

[0035] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0037] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0038] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0039] See also Figure 1 Some embodiments of the present disclosure provide an optical proximity correction method, including steps S100 to S400.

[0040] S100, obtaining a mask design layout, and determining a one-dimensional region and a two-dimensional region in the mask design layout.

[0041] S200, taking a pattern in a one-dimensional region as a first target pattern for optical proximity correction, performing a first optical proximity correction on the first target pattern using a one-dimensional optical proximity correction model, and obtaining a first reference pattern of the mask.

[0042] S300, taking the pattern in the two-dimensional area as a second target pattern for optical proximity correction, performing a second optical proximity correction on the second target pattern using a two-dimensional optical proximity correction model, and obtaining a second reference pattern of the mask.

[0043] S400, merging the first reference layout of the mask and the second reference layout of the mask to obtain a mask layout.

[0044] In the disclosed embodiment, the one-dimensional area and the two-dimensional area in the mask design layout can be distinguished, so that the one-dimensional optical proximity correction model is used to correct the pattern in the one-dimensional area to obtain the first reference layout of the mask, and the two-dimensional optical proximity correction model is used to correct the pattern in the two-dimensional area to obtain the second reference layout of the mask, and then the corrected first reference layout of the mask and the second reference layout of the mask are merged to obtain the mask layout. In this way, the disclosed embodiment can correct and merge the different optical proximity correction models applied to the patterns in the one-dimensional area and the two-dimensional area to obtain the mask layout, thereby eliminating the need to provide independent mask design layouts and masks for the one-dimensional graphics and the two-dimensional graphics and perform corresponding processes. Therefore, the disclosed embodiment can effectively save the mask cost and reduce the R&D cost and process cost, etc., while improving the efficiency of the manual optical proximity correction (Manual OPC), thereby effectively improving the production efficiency and production yield of DRAM.

[0045] It should be added that the above-mentioned one-dimensional area and two-dimensional area are divided according to the regular arrangement degree of the pattern; wherein, a pattern arranged according to a fixed period in both the first direction and the second direction is a one-dimensional pattern, and the area where the one-dimensional pattern is located is a one-dimensional area; a pattern arranged irregularly in the first direction and / or the second direction is a two-dimensional pattern, and the area where the two-dimensional pattern is located is a two-dimensional area. The first direction and the second direction intersect, for example, are orthogonal.

[0046] In some embodiments, determining the one-dimensional area and the two-dimensional area in the mask design layout in step S100 includes: obtaining a one-dimensional pattern definition layer; aligning and overlapping the one-dimensional pattern definition layer and the mask design layout; wherein the area of ​​the mask design layout covered by the pattern in the one-dimensional pattern definition layer is the one-dimensional area, and the area of ​​the mask design layout not covered by the pattern in the one-dimensional pattern definition layer is the two-dimensional area.

[0047] Here, the pattern in the one-dimensional pattern definition layer is a one-dimensional pattern definition pattern, which can be obtained by matching according to requirements.

[0048] In the embodiment of the present disclosure, the one-dimensional pattern definition layer can be pre-stored or obtained while obtaining the mask design layout. After obtaining the one-dimensional pattern definition layer, the embodiment of the present disclosure can easily and conveniently define a one-dimensional region (i.e., a one-dimensional pattern) and a two-dimensional region (i.e., a two-dimensional pattern) quickly when performing optical proximity correction by aligning and overlapping the one-dimensional pattern definition layer and the mask design layout, so as to improve the efficiency of optical proximity correction.

[0049] See also Figure 2 to Figure 4 In the following embodiments, a layout diagram in DRAM manufacturing is used as an example to illustrate the one-dimensional region, the two-dimensional region, and the one-dimensional pattern definition layer in detail. The first direction is the X direction, and the second direction is the Y direction.

[0050] See also Figure 2, multiple chips Chip can be arranged in an array to realize integrated manufacturing, and the area between adjacent chips Chip is a cutting path (Frame). The chip array and the area where the cutting path is located are, for example, the target exposure area corresponding to the optical proximity correction. After amplifying the area where any chip Chip is located, the chip Chip can have one or more array areas (Array) and corresponding edge areas Peri. Among them, the array area (Array) of any chip Chip can be provided with multiple array units Cell and a functional area R located next to the array unit Cell. Signal sensing circuits and control circuits can be set in the functional area R, for example, a sense amplifier circuit (sense amplifier) ​​SA, and a word line drive circuit (sub-word line) SWD, etc. can be provided. In this way, the above-mentioned areas can be divided into one-dimensional areas and two-dimensional areas according to the regular arrangement degree of the patterns therein, so as to correspond to one-dimensional patterns (1D pattern) and two-dimensional patterns (2D pattern).

[0051] See also Figure 3 , the one-dimensional pattern definition layer L is obtained based on the layout of the aforementioned chip Chip. After obtaining the one-dimensional pattern definition layer L, the one-dimensional pattern definition layer L and the mask design layout (such as the layout of the aforementioned chip Chip) can be aligned and overlapped; wherein, the area of ​​the mask design layout (such as the layout of the aforementioned chip Chip) covered by the pattern in the one-dimensional pattern definition layer L (i.e., the one-dimensional pattern definition pattern F0) is a one-dimensional area, and the area of ​​the mask design layout (such as the layout of the aforementioned chip Chip) not covered by the pattern in the one-dimensional pattern definition layer (i.e., the one-dimensional pattern definition pattern F0) is a two-dimensional area.

[0052] Therefore, if Figure 4 As shown in FIG. (a), the area where the array unit Cell is located is a one-dimensional area, and the pattern in the array unit Cell is a one-dimensional pattern F1, which can be arranged according to a fixed period in both the X direction and the Y direction. Figure 4 As shown in Figure (b), the area where the edge area Peri and the functional area R (for example, the area where the sensing amplifier circuit SA and the word line driving circuit SWD are located) are located is a two-dimensional area, and the pattern within the edge area Peri and the functional area R is a two-dimensional pattern F2, and the two-dimensional pattern F1 is irregularly arranged in the X direction and / or the Y direction.

[0053] It can be understood that the one-dimensional pattern definition pattern F0 in the one-dimensional pattern definition layer L may be different to match the different mask design layouts. Figure 5The one-dimensional pattern definition layer L is obtained based on the layout of the integrated distribution of the aforementioned chip Chip, and the one-dimensional pattern definition pattern F0 in the one-dimensional pattern definition layer L can also be distributed in the area where the cutting path is located. The embodiment of the present disclosure does not limit this.

[0054] It is worth mentioning that in some embodiments, see Figure 6 and Figure 7 In step S400, the first reference layout of the mask and the second reference layout of the mask are merged to obtain the mask layout, including: performing optical manufacturability (Lithography manufacturability check, referred to as LMC) checks on the first reference layout of the mask and the second reference layout of the mask respectively; after the optical manufacturability checks of the first reference layout of the mask and the second reference layout of the mask are qualified, the first reference layout of the mask and the second reference layout of the mask are merged to obtain the mask layout.

[0055] In the disclosed embodiment, by first performing an optical manufacturability check on the corrected first reference mask layout and the second reference mask layout, the manufacturability of the first reference mask layout and the second reference mask layout can be ensured, so as to ensure that the mask layout obtained after merging the first reference mask layout and the second reference mask layout has better manufacturability, thereby facilitating improving the production efficiency and production yield of DRAM.

[0056] In some embodiments, see Figure 6 The optical proximity correction method further includes: in the process of using the pattern in the one-dimensional region as a first target pattern for optical proximity correction and using the one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, using the pattern in the two-dimensional region as an optical environment reference factor for the first optical proximity correction. In the process of using the pattern in the two-dimensional region as a second target pattern for optical proximity correction and using the two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, using the first reference pattern of the mask as an optical environment reference factor for the second optical proximity correction.

[0057] For example, Figure 6 As shown in , step S200 may include steps S210 to S240.

[0058] S210: Taking a pattern in a one-dimensional region as a first target pattern for optical proximity correction.

[0059] S220: Using the pattern in the two-dimensional area as an optical environment reference factor for a first optical proximity correction.

[0060] S230: Perform a first optical proximity correction on the first target pattern using a one-dimensional optical proximity correction model.

[0061] S240, obtaining a first reference layout of the mask.

[0062] Here, there is no order restriction between step S210 and step S220, that is, one can be performed first, or they can be performed simultaneously.

[0063] For example, Figure 6 As shown in , step S300 may include steps S310 to S340.

[0064] S310, using the first reference pattern of the mask as an optical environment reference factor for a second optical proximity correction.

[0065] S320, taking the pattern in the two-dimensional area as a second target pattern for optical proximity correction.

[0066] S330: Perform a second optical proximity correction on the second target pattern using a two-dimensional optical proximity correction model.

[0067] S340, obtaining a second reference layout of the mask.

[0068] Here, there is no order restriction between step S310 and step S320, that is, one can be performed first, or they can be performed simultaneously.

[0069] It should be added that, in some of the above embodiments, the first optical proximity correction is performed on the first target pattern using a one-dimensional optical proximity correction model, and the second optical proximity correction is performed on the second target pattern using a two-dimensional optical proximity correction model, both of which are model-based optical proximity corrections. In addition, the aforementioned use of the pattern in the two-dimensional region as an optical environment reference factor for the first optical proximity correction, and the use of the first reference layout of the mask as an optical environment reference factor for the second optical proximity correction, means that the pattern in the two-dimensional region and the first reference layout of the mask can be used as reference layers for optical environment calculation during the corresponding optical proximity correction.

[0070] In some embodiments, after performing a first optical proximity correction on a first target pattern using a one-dimensional optical proximity correction model and obtaining a first reference layout of a photomask, an OPC repair script may be used on a two-dimensional optical proximity correction model to use the first reference layout of the photomask as an optical environment reference factor for a second optical proximity correction. In addition, in this step, it is necessary not only to maintain the pattern stability of the first reference layout of the photomask, but also to satisfy the OPC convergence of the one-dimensional region and the two-dimensional region at the same time. The convergence condition of the OPC convergence may be set to match the requirements.

[0071] In addition, in some embodiments, the first target pattern and the second target pattern are located in the same layer. The one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are established based on the same process parameters and are debugged based on the same reference standard measurement point.

[0072] It can be understood that the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are two independent models. If the two are applied to the optical proximity correction of the pattern in the same layer (for example, the same photolithography pattern layer), there will be certain differences in the process optimal energy and optimal focus value in the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model. Therefore, in the embodiment of the present disclosure, the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are established based on the same process parameters (for example, the data obtained by exposure using the same set of process parameters are used for simulation), and are debugged based on the same reference standard measurement point (anchor gauge), which can effectively avoid the difference between the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model, so as to facilitate the subsequent merging of the first reference layout of the mask and the second reference layout of the mask after correction.

[0073] Here, the reference standard measurement point is used to define the energy threshold (intensity threshold) of the photoresist surface in the corresponding optical proximity correction model, which corresponds to the exposure condition of the model data in the process. If the reference standard measurement points of the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are the same, it means that the exposure conditions of the two are the same in the process. Therefore, the key to whether the same mask design layout can be corrected by the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model respectively lies in whether the one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are established with the same process parameters and whether they are calibrated with the same reference standard measurement point.

[0074] It is worth mentioning that in some of the above embodiments, Figure 6 In these embodiments, optionally, the minimum distance between the pattern in the one-dimensional area and the pattern in the two-dimensional area is smaller than the optical proximity correction optical range (OPC model ambit).

[0075] For example, the optical influence range of the optical proximity correction is Where λ is the wavelength of the exposure beam, NA is the numerical aperture of the imaging objective lens, and Pixel Count is the number of pixels.

[0076] In some other embodiments, see Figure 7, the minimum distance between the pattern in the one-dimensional region and the pattern in the two-dimensional region is greater than the optical influence range of the optical proximity correction. In this way, the optical diffraction and refraction based on the pattern in the one-dimensional region and the pattern in the two-dimensional region do not interfere with each other. The first optical proximity correction of the first target pattern using the one-dimensional optical proximity correction model and the second optical proximity correction of the second target pattern using the two-dimensional optical proximity correction model can be performed simultaneously. Therefore, the running time of the optical proximity correction can be effectively saved to improve the efficiency of the optical proximity correction.

[0077] On the other hand, the embodiments of the present disclosure also provide an optical proximity correction system for implementing the optical proximity correction method described in some of the above embodiments. The optical proximity correction system also has the technical advantages of the above optical proximity correction method, which will not be described in detail here.

[0078] See also Figure 8 In some embodiments of the present disclosure, the optical proximity correction system includes: a pattern recognition unit 1, a pattern correction unit 2 and a pattern processing unit 3. The pattern recognition unit 1 is configured to: obtain a mask design layout, and determine a one-dimensional area and a two-dimensional area in the mask design layout. The pattern correction unit 2 is connected to the pattern recognition unit 1, and is configured to: use the pattern in the one-dimensional area as the first target pattern for optical proximity correction, use a one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, and obtain a first reference layout of the mask; use the pattern in the two-dimensional area as the second target pattern for optical proximity correction, use a two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, and obtain a second reference layout of the mask. The pattern processing unit 3 is connected to the pattern correction unit 2, and is configured to: merge the first reference layout of the mask and the second reference layout of the mask to obtain the mask layout.

[0079] In some embodiments, the pattern recognition unit 1 pre-stores a one-dimensional pattern definition layer, and the pattern recognition unit 1 is further configured to align and overlap the one-dimensional pattern definition layer and the mask design layout to identify the area of ​​the mask design layout covered by the pattern in the one-dimensional pattern definition layer as a one-dimensional area, and identify the area of ​​the mask design layout not covered by the pattern in the one-dimensional pattern definition layer as a two-dimensional area.

[0080] Here, the meanings of the one-dimensional region and the two-dimensional region can be found in the relevant records in some of the aforementioned embodiments and will not be described in detail here.

[0081] In some embodiments, see Fig. 9The optical proximity correction system further includes: a pattern detection unit 4. The pattern detection unit 4 is connected to the pattern correction unit 2 and the pattern processing unit 3 respectively, and is configured to: perform optical manufacturability inspection on the first reference layout of the mask and the second reference layout of the mask respectively, so as to send a layout merging instruction to the pattern processing unit 3 after the optical manufacturability inspection of the first reference layout of the mask and the second reference layout of the mask is qualified.

[0082] In some embodiments, please refer to Fig. 9 The pattern correction unit 2 includes a one-dimensional pattern correction module 21 and a two-dimensional pattern correction module 22. The one-dimensional pattern correction module 21 is connected to the pattern recognition unit 1 and the pattern detection unit 4, and is configured to: use the pattern in the one-dimensional area as the first target pattern for optical proximity correction, use the one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, and obtain a first reference layout of the mask. The two-dimensional pattern correction module 22 is connected to the pattern recognition unit 1 and the pattern detection unit 4, and is configured to: use the pattern in the two-dimensional area as the second target pattern for optical proximity correction, use the two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, and obtain a second reference layout of the mask.

[0083] In some embodiments, the one-dimensional pattern correction module 21 is further configured to: use the pattern in the one-dimensional area as the first target pattern for optical proximity correction, use the pattern in the two-dimensional area as the optical environment reference factor for the first optical proximity correction, use the one-dimensional optical proximity correction model to perform the first optical proximity correction on the first target pattern, and obtain the first reference layout of the mask.

[0084] In some embodiments, please refer to Fig. 9 The two-dimensional pattern correction module 22 is also connected to the one-dimensional pattern correction module 21. The two-dimensional pattern correction module 22 is also configured to: use the pattern in the two-dimensional area as the second target pattern for optical proximity correction, use the first reference layout of the mask as the optical environment reference factor for the second optical proximity correction, use the two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, and obtain the second reference layout of the mask.

[0085] In addition, in the optical proximity correction system provided by some of the above embodiments, the terms "module" and "unit" used in this specification can be used to represent computer-related entities, hardware, firmware, a combination of hardware and software, software, or software in execution. For example, a "module" or "unit" can be, but is not limited to: a process running on a processor, a processor, an object, an executable file, an execution thread, a program and / or a computer. For example, a "module" or "unit" can be executed from various computer-readable media having various data structures stored thereon.

[0086] In the above embodiments provided in the present disclosure, it should be understood that the disclosed "modules" or "units" can be implemented in other ways. For example, the devices described above are only schematic. For example, the division of modules or units is only a division of logical functions, and there may be other division methods in actual implementation, such as multiple modules or units can be combined or integrated into another device, or some features can be ignored or not executed. In addition, the connection between each other described can be through some interfaces, indirect coupling or communication connection of modules or units, which can be electrical, mechanical or other forms. The units or modules described separately may or may not be physically separated. Some or all of the units or modules can be selected according to actual needs to achieve the purpose of the embodiment scheme of the present disclosure.

[0087] The embodiments of the present disclosure also provide a method for manufacturing a mask, which can manufacture a mask according to the mask layout obtained in the optical proximity correction method described in some of the aforementioned embodiments to form a mask layout in the mask.

[0088] In the embodiment of the present disclosure, the mask manufacturing method is as described above. The technical effect achieved by the mask manufacturing method is the same as the technical effect achieved by the optical proximity correction method in the above embodiment, and will not be described in detail here.

[0089] The present disclosure also provides an electronic device, including a memory and a processor. The memory stores computer instructions. When the computer instructions are executed by the processor, the optical proximity correction method described in any of the above embodiments is implemented.

[0090] The embodiments of the present disclosure further provide a storage medium, which stores computer instructions that are suitable for execution by a processor, and when the computer instructions are executed by the processor, the optical proximity correction method as described in any of the aforementioned embodiments is implemented.

[0091] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a readable storage medium. When the computer program is executed, the process of the embodiments of the above-mentioned methods can be implemented. Among them, any reference to the memory or other medium used in the embodiments provided by the present disclosure can include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), floppy disk, flash memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), etc. Volatile memory may include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The processor involved in the embodiments provided by the present disclosure may be a general-purpose processor, a central processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but is not limited thereto.

[0092] In the above storage medium and electronic device, when the computer instructions are executed by the processor, the optical proximity correction method described in any of the above embodiments is adopted. In this way, the above storage medium and electronic device are used for optical proximity correction, which is beneficial to saving mask costs and reducing research and development costs and process costs, while improving the efficiency of optical proximity correction (Manual Optical Proximity Correction, referred to as Manual OPC), so as to effectively improve the production efficiency and production yield of DRAM.

[0093] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0094] The above-described embodiments only express several implementation methods of the present disclosure, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present disclosure, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure shall be subject to the attached claims.

Claims

1. An optical proximity correction method, characterized in that: include: Acquire a mask design layout, and determine a one-dimensional region and a two-dimensional region in the mask design layout; Taking the pattern in the one-dimensional region as a first target pattern for optical proximity correction, performing a first optical proximity correction on the first target pattern using a one-dimensional optical proximity correction model, and obtaining a first reference pattern of the mask; Taking the pattern in the two-dimensional area as a second target pattern for optical proximity correction, performing a second optical proximity correction on the second target pattern using a two-dimensional optical proximity correction model, and obtaining a second reference pattern of the mask; The first reference layout of the photomask and the second reference layout of the photomask are combined to obtain a photomask layout.

2. The optical proximity correction method according to claim 1, characterized in that: Determining the one-dimensional area and the two-dimensional area in the mask design layout includes: Get the one-dimensional pattern definition layer; Aligning and overlapping the one-dimensional pattern definition layer and the mask design layout; The area of ​​the mask design layout covered by the pattern in the one-dimensional pattern definition layer is the one-dimensional area, and the area of ​​the mask design layout not covered by the pattern in the one-dimensional pattern definition layer is the two-dimensional area.

3. The optical proximity correction method according to claim 1, characterized in that: The step of merging the first reference layout of the photomask and the second reference layout of the photomask to obtain a photomask layout comprises: Performing optical manufacturability inspection on the first reference pattern of the photomask and the second reference pattern of the photomask respectively; After the optical manufacturability inspection of the first reference mask layout and the second reference mask layout is qualified, the first reference mask layout and the second reference mask layout are combined to obtain the mask layout.

4. The optical proximity correction method according to claim 1, characterized in that: Also includes: In the process of taking the pattern in the one-dimensional area as a first target pattern for optical proximity correction and using a one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, taking the pattern in the two-dimensional area as an optical environment reference factor for the first optical proximity correction; In the process of taking the pattern in the two-dimensional area as the second target pattern for optical proximity correction and using a two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, the first reference pattern of the mask is used as an optical environment reference factor for the second optical proximity correction.

5. The optical proximity correction method according to claim 4, characterized in that: A minimum distance between the pattern in the one-dimensional area and the pattern in the two-dimensional area is smaller than an optical influence range of optical proximity correction.

6. The optical proximity correction method according to claim 1, characterized in that: The minimum distance between the pattern in the one-dimensional area and the pattern in the two-dimensional area is greater than the optical influence range of the optical proximity correction; The performing of a first optical proximity correction on the first target pattern by using a one-dimensional optical proximity correction model, and the performing of a second optical proximity correction on the second target pattern by using a two-dimensional optical proximity correction model are performed simultaneously.

7. The optical proximity correction method according to any one of claims 1 to 6, characterized in that: The first target pattern and the second target pattern are located in the same layer; The one-dimensional optical proximity correction model and the two-dimensional optical proximity correction model are established based on the same process parameters and are debugged based on the same reference standard measurement point.

8. An optical proximity correction system, characterized in that: include: The pattern recognition unit is configured to: obtain a mask design layout, and determine a one-dimensional region and a two-dimensional region in the mask design layout; The pattern correction unit is connected to the pattern recognition unit and is configured to: use the pattern in the one-dimensional area as a first target pattern for optical proximity correction, use a one-dimensional optical proximity correction model to perform a first optical proximity correction on the first target pattern, and obtain a first reference layout of the mask; use the pattern in the two-dimensional area as a second target pattern for optical proximity correction, use a two-dimensional optical proximity correction model to perform a second optical proximity correction on the second target pattern, and obtain a second reference layout of the mask; The pattern processing unit is connected to the pattern correction unit and is configured to merge the first reference layout of the mask and the second reference layout of the mask to obtain a mask layout.

9. The optical proximity correction system according to claim 8, characterized in that: Also includes: The pattern detection unit is connected to the pattern correction unit and the pattern processing unit respectively, and is configured to: perform optical manufacturability inspection on the first reference layout of the mask and the second reference layout of the mask respectively, so as to send a layout merging instruction to the pattern processing unit after the optical manufacturability inspection of the first reference layout of the mask and the second reference layout of the mask is qualified.

10. A method for producing a photomask, characterized in that: include: A mask is manufactured using the mask pattern obtained in the optical proximity correction method according to any one of claims 1 to 7, so as to form the mask pattern in the mask.

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