Method for determining and optimizing interface deformation degree of gallium oxide crystal grown by guiding mode method

Abstract

The present invention provides a method for determining and optimizing the degree of interface deformation of a gallium oxide crystal grown by the guiding mode method. In the embodiments of the present invention, a target crystallization interface is determined from a target calculation domain, and a steady-state calculation is performed on the target calculation domain to obtain the temperature field where the target crystallization interface is located; according to the temperature field, a target function corresponding to the target crystallization interface is determined; the directional derivative of the target function in the direction of the coordinate axes in a three-dimensional rectangular coordinate system is calculated; according to the three-dimensional coordinates and the directional derivative of the target grid surface in the three-dimensional rectangular coordinate system, the temperature change factor of the target grid surface is determined; according to the temperature change factors of each target grid surface, the degree of deformation of the target crystallization interface is determined. In the embodiments of the present invention, the temperature change factors of each target grid surface are used as the judgment basis to determine the degree of deformation of the target crystallization interface, which does not rely on the subjective judgment of observers and improves the accuracy and automation degree of determining the degree of deformation of the crystallization interface.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular to a method for determining and optimizing the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method. Background Art

[0002] Crystal growth is an important means to artificially obtain crystal materials with special functions required by various modern technologies such as semiconductor materials and artificial gemstones. The shape of the crystallization interface is crucial for the stability of crystal growth. A flat crystallization interface helps the crystal grow stably, while a severely deformed crystallization interface will affect the quality and stability of crystal growth, and even interrupt the crystal growth process.

[0003] Currently, in the numerical simulation process of the crystallization interface, the deformation degree of the crystallization interface is mainly judged by artificially observing the shape of the crystallization interface or observing the shape of the isothermal surface near the crystallization interface. This method relies on the subjective judgment of the observer and lacks an objective quantitative judgment basis, resulting in a reduction in the accuracy and automation degree of finally determining the deformation degree of the crystallization interface. Summary of the Invention

[0004] The embodiments of the present invention provide a method for determining and optimizing the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method, which can solve the problem that the accuracy and automation degree of finally determining the deformation degree of the crystallization interface are reduced due to the lack of an objective quantitative judgment basis in the process of determining the deformation degree of the crystallization interface in the related art.

[0005] In a first aspect, the embodiments of the present invention provide a method for determining the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method, and the method includes:

[0006] Determine a target crystallization interface from a target calculation domain, and perform a steady-state calculation on the target calculation domain to obtain the temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established according to a crystal growth furnace and a gallium oxide crystal grown by the guiding mode method using the crystal growth furnace in a three-dimensional rectangular coordinate system, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; at least two target grid surfaces constituting the target crystallization interface are included in the target calculation domain;

[0007] Determine a target function corresponding to the target crystallization interface according to the temperature field; the target function is used to establish the correlation between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface;

[0008] Calculate the directional derivative of the target function in the direction of the coordinate axes of the three-dimensional rectangular coordinate system;

[0009] Determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative.

[0010] Determine the degree of deformation of the target crystallization interface according to the temperature change factors of each of the target grid surfaces.

[0011] In a second aspect, an embodiment of the present invention provides a method for optimizing the interface of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method. The method includes:

[0012] Obtain the degree of deformation of the target crystallization interface determined by the method for determining the degree of deformation of the interface of a gallium oxide crystal grown by the EFG method as described in any one of the above; the target crystallization interface is the crystallization interface determined from the target calculation domain; the target calculation domain is obtained by meshing the target geometric model, and the target geometric model is a three-dimensional geometric model established according to the crystal growth furnace and the gallium oxide crystal grown by the EFG method using the crystal growth furnace in the three-dimensional rectangular coordinate system, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal;

[0013] Set a thermal resistance structure in the crystal growth furnace according to the degree of deformation of the target crystallization interface, so as to optimize the target crystallization interface by using the thermal resistance structure.

[0014] Wherein, the thermal resistance structure is arranged above the first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to the second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block heat transfer in the x-axis direction and / or the y-axis direction of the crystal growth furnace.

[0015] In a third aspect, an embodiment of the present invention provides a device for determining the degree of deformation of the interface of a gallium oxide crystal grown by the EFG method. The device includes:

[0016] A first determination module, configured to determine a target crystallization interface from a target calculation domain, and perform a steady-state calculation on the target calculation domain to obtain the temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing the target geometric model, and the target geometric model is a three-dimensional geometric model established according to the crystal growth furnace and the gallium oxide crystal grown by the EFG method using the crystal growth furnace in the three-dimensional rectangular coordinate system, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; at least two target grid surfaces constituting the target crystallization interface are included in the target calculation domain;

[0017] A second determination module, configured to determine a target function corresponding to the target crystal interface according to the temperature field; the target function is used to establish a correlation relationship between the temperature of a target grid surface in the target crystal interface and the three-dimensional coordinates of the target grid surface;

[0018] A calculation module, configured to calculate the directional derivative of the target function in the axial directions of the three-dimensional rectangular coordinate system;

[0019] A third determination module, configured to determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative;

[0020] A fourth determination module, configured to determine the deformation degree of the target crystal interface according to the temperature change factors of each target grid surface.

[0021] In a fourth aspect, an embodiment of the present invention provides an electronic device, including: a memory and a processor, where the memory is used to store a computer program, and the processor is configured to implement the method for determining the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method as described in any one of the above when executing the computer program.

[0022] In a fifth aspect, an embodiment of the present invention provides a readable storage medium, where the readable storage medium stores a computer program, and the computer program, when executed by a processor, implements the method for determining the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method as described in any one of the above.

[0023] The method for determining the deformation degree of the interface of a gallium oxide crystal grown by the guiding mode method provided by the embodiment of the present invention determines a target function for establishing a correlation relationship between the temperature of a target grid surface in the target crystal interface and the three-dimensional coordinates of the target grid surface according to the temperature field where the target crystal interface is located, and calculates the directional derivative of the target function in the axial directions of the three-dimensional rectangular coordinate system. The directional derivative quantifies the temperature gradient of the temperature of the target grid surface in the target crystal interface in the axial directions of the three-dimensional rectangular coordinate system; further, based on the directional derivative and the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system, the temperature change factors of each target grid surface in the target crystal interface are determined, and the thermal field uniformity of the target crystal interface is objectively and quantitatively reflected by the temperature change factors; and the temperature change factors of each target grid surface are used as a determination basis to determine the deformation degree of the target crystal interface, without relying on the subjective judgment of observers, improving the accuracy and automation degree of evaluating the deformation degree of the crystal interface, and providing an intuitive and reliable reference basis for the control direction of the crystal growth process. Description of the Drawings

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for the description of the embodiments of the present invention. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0025] Figure 1 is a flowchart of the steps of a method for determining the degree of interface deformation of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method provided by an embodiment of the present invention;

[0026] Figure 2 is a schematic structural diagram of a target geometric model provided by an embodiment of the present invention;

[0027] Figure 3 is a schematic structural diagram of a target crystallization interface provided by an embodiment of the present invention;

[0028] Figure 4 is a schematic diagram of the deformation situation of a two-dimensional crystallization interface provided by an embodiment of the present invention;

[0029] Figure 5 is a flowchart of the steps of a method for optimizing the interface of a gallium oxide crystal grown by the EFG method provided by an embodiment of the present invention;

[0030] Figure 6 is a schematic structural diagram of another target geometric model provided by an embodiment of the present invention;

[0031] Figure 7 is a schematic structural diagram of yet another target geometric model provided by an embodiment of the present invention;

[0032] Figure 8 is a schematic diagram of the distribution of the temperature change factor of the target crystallization interface before optimizing the interface of a gallium oxide crystal grown by the EFG method;

[0033] Figure 9 is a schematic diagram of the distribution of the temperature change factor of the target crystallization interface after optimizing the interface of a gallium oxide crystal grown by the EFG method using a cover plate with a smaller thickness as a thermal resistance structure;

[0034] Figure 10 is a schematic diagram of the distribution of the temperature change factor of the target crystallization interface after optimizing the interface of a gallium oxide crystal grown by the EFG method using a thermal insulation layer with a larger thickness as a thermal resistance structure;

[0035] Figure 11 is a logic block diagram of a device for determining the degree of interface deformation of a gallium oxide crystal grown by the EFG method provided by an embodiment of the present invention. Detailed implementation manners

[0036] To make the above objects, features, and advantages of the present invention more apparent and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0037] Method Embodiment

[0038] Refer to Figure 1 , which shows a step flowchart of a method for determining the degree of interface deformation of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method of the present invention. The method may specifically include the following steps S101 to S105:

[0039] The method for determining the degree of interface deformation of a gallium oxide crystal grown by the EFG method provided by the embodiments of the present invention can be applied to any electronic device with data processing functions. Such an electronic device may include, but is not limited to, mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, in-vehicle devices, wearable devices, etc., and fixed terminals such as digital TVs, desktop computers, etc.

[0040] Step S101: Determine a target crystallization interface from a target computational domain, and perform a steady-state calculation on the target computational domain to obtain the temperature field where the target crystallization interface is located.

[0041] Among them, the target computational domain is obtained by meshing a target geometric model. The target geometric model is a three-dimensional geometric model established according to a crystal growth furnace and a gallium oxide crystal grown by the EFG method using the crystal growth furnace in a three-dimensional rectangular coordinate system. The target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; the target computational domain includes at least two target grid surfaces that make up the target crystallization interface.

[0042] It can be understood that the target crystallization interface is the solid-liquid interface between the melt corresponding to the gallium oxide crystal in the crystal growth furnace and the gallium oxide crystal during the growth of the gallium oxide crystal by the EFG method, that is, a three-dimensional non-axisymmetric crystallization interface. The degree of interface deformation of the gallium oxide crystal determined by the method for determining the degree of interface deformation of a gallium oxide crystal grown by the EFG method provided by the embodiments of the present invention is the degree of deformation of the target crystallization interface.

[0043] Refer to Figure 2, showing a schematic structural diagram of a target geometric model of the present invention; the target geometric model includes a crystal growth furnace, a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method using the crystal growth furnace, a melt corresponding to the gallium oxide crystal, and a target crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal. Among them, the crystal growth furnace includes a die and a heater; the heater is arranged around the crystal growth furnace, and the heater includes an upper heater and a lower heater. When an electric current is passed through the induction coil corresponding to the heater, the heater can heat the inside of the growth furnace; a capillary slit is provided in the die, so that the melt corresponding to the gallium oxide crystal contained in the lower crucible of the crystal growth furnace can rise to the top of the die by capillary action, form a thin film at the top of the die and spread around, and form a liquid bridge between the crystal growth furnace and the gallium oxide crystal. Among them, the upper surface of the liquid bridge is the solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and this solid-liquid interface is the target crystallization interface.

[0044] It should be noted that the target crystallization interface can be a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; the target crystallization interface can also be a preset horizontal plane as shown in Figure 2 It can be understood that in the case where the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal does not deform, the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal is also a plane as shown in Figure 2 shown.

[0045] In the case where the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the temperatures of each target grid surface in the target crystallization interface are uniform; the temperatures of each target grid surface in the target crystallization interface being uniform means that the temperatures of each target grid surface are the same or the temperature difference between each target grid surface is less than a first preset threshold. Exemplarily, the first preset threshold is 0.5 °C.

[0046] Among them, the crystal growth furnace is a growth furnace that can realize the growth of gallium oxide crystals by the EFG method, and the gallium oxide crystal is a plate-shaped crystal grown by the EFG method using the crystal growth furnace.

[0047] In the process of determining the target geometric model in the embodiment of the present invention, the electronic device can first obtain the position relationship and size information among the various components in the crystal growth furnace, the gallium oxide crystal, and the melt corresponding to the gallium oxide crystal; then, according to the position relationship and size information, establish a three-dimensional geometric model in a three-dimensional rectangular coordinate system to obtain the target geometric model. Among them, as shown in Figure 2As shown, the origin of the three-dimensional rectangular coordinate system is the center point at the bottom of the crystal growth furnace in the target geometric model. The direction of the z-axis in the three-dimensional rectangular coordinate system is the growth direction of the gallium oxide crystal. The direction of the x-axis in the three-dimensional rectangular coordinate system is the thickness direction of the gallium oxide crystal. The direction of the y-axis in the three-dimensional rectangular coordinate system is the width direction of the gallium oxide crystal.

[0048] After determining the target geometric model, the electronic device can perform mesh division on the target geometric model to obtain a target computational domain corresponding to the target geometric model. The target computational domain includes computational meshes obtained by performing mesh division on the target geometric model. Among them, the number of computational meshes in the target computational domain is at least 2.

[0049] Referring to Figure 3 , a schematic structural diagram of a target crystallization interface of the present invention is shown. As Figure 3 shown, since the target geometric model includes a target crystallization interface, the computational meshes in the target computational domain include the target computational meshes where the target crystallization interface is located, and the mesh plane where the target crystallization interface is located in the target computational mesh is the target mesh plane. Among them, the number of target computational meshes is at least 2, and the number of target mesh planes constituting the target crystallization interface is also at least 2.

[0050] In an embodiment of the present invention, when the electronic device executes step S101 to determine the target crystallization interface from the target computational domain, specifically: the electronic device determines the plane at the solid-liquid junction between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal in the target computational domain as the target crystallization interface, and the target crystallization interface is parallel to the second plane formed by the x-axis and the y-axis in the three-dimensional rectangular coordinate system.

[0051] As another alternative embodiment, the electronic device can also determine the crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal in the target computational domain as the target crystallization interface. In this scenario, the target crystallization interface is the crystallization interface determined through numerical simulation that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal.

[0052] It can be understood that after determining the target crystallization interface from the target computational domain, the target mesh planes constituting the target crystallization interface in the target computational domain are also determined.

[0053] After determining the target crystallization interface, the electronic device can first determine whether the current temperature field of the target computational domain has reached an equilibrium state; when the current temperature field of the target computational domain reaches the equilibrium state, the electronic device can directly determine the current temperature field as the temperature field where the target crystallization interface is located; when the current temperature field of the target computational domain does not reach the equilibrium state, the electronic device performs a steady-state calculation on the target computational domain to obtain the temperature field where the target crystallization interface is located.

[0054] Among them, when the electronic device performs a steady-state calculation on the target computational domain to obtain the temperature field where the target crystallization interface is located, specifically: first, obtain the steady-state calculation parameters required for performing a steady-state calculation on the target computational domain; then, based on the steady-state calculation parameters, perform a steady-state calculation on the target computational domain to obtain the temperature field where the target crystallization interface is located.

[0055] Among them, the steady-state calculation parameters may include but are not limited to the thermophysical property parameters of each component in the target geometric model, the control equations corresponding to each computational grid in the target computational domain, the boundary conditions of the target computational domain, and source terms, etc. The control equation is a physical model determined according to the physical processes involved in the crystal growth furnace and used to describe the physical processes involved in the crystal growth furnace. The control equation may include but is not limited to: the energy conservation equation, the momentum conservation equation, the radiation transfer equation, the electromagnetic induction control equation, the mass conservation equation, and the Young-Laplace equation.

[0056] Step S102: Determine the target function corresponding to the target crystallization interface according to the temperature field.

[0057] Among them, the target function is used to establish the correlation between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface. Specifically, when the target crystallization interface is a preset horizontal plane and / or a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the target function may be the temperature field function of the temperature field where the target crystallization interface is located; when the target crystallization interface is a crystallization interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, since the temperatures of each target grid surface in the target crystallization interface are uniform, the temperature parameter in the temperature field function of the temperature field where the target crystallization interface is located can also be used as a constant, and the temperature field function can be simplified to a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate.

[0058] In the embodiments of the present invention, the temperature of the target grid surface refers to the temperature of the center point of the target grid surface, and the three-dimensional coordinates of the target grid surface refer to the coordinates of the center point of the target grid surface in the three-dimensional rectangular coordinate system.

[0059] It can be understood that when the target crystallization interface is a preset horizontal plane, if the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal does not deform, the target crystallization interface is the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and the temperatures of the respective target grid surfaces in the target crystallization interface are uniform; if the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal deforms, the target crystallization interface is not the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and the temperatures of the respective target grid surfaces in the target crystallization interface are non-uniform. In the embodiments of the present invention, regardless of whether the target crystallization interface is the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the deformation degree of the target crystallization interface can be determined by the method for determining the deformation degree of the gallium oxide crystal growth interface by the guided mode method provided in the embodiments of the present invention; when the target crystallization interface is not the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the deformation degree of the target crystallization interface reflects the deformation degree of the crystallization interface when the target crystallization interface is deformed by numerical simulation to be infinitely close to the crystallization interface of the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal.

[0060] Step S103: Calculate the directional derivative of the objective function in the direction of the coordinate axes of the three-dimensional rectangular coordinate system.

[0061] Among them, the coordinate axes of the three-dimensional rectangular coordinate system include the x-axis, the y-axis, and the z-axis. The directional derivative of the objective function in the direction of the coordinate axes of the three-dimensional rectangular coordinate system may include: the first directional derivative of the objective function in the x-axis direction, the second directional derivative of the objective function in the y-axis direction, and the third directional derivative of the objective function in the z-axis direction.

[0062] In the embodiments of the present invention, since the objective function establishes the correlation between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface, by calculating the directional derivative of the objective function in the direction of the coordinate axes of the three-dimensional rectangular coordinate system in step 103, the directional derivative is used to reflect the temperature gradient of the temperature of the target grid surface in the target crystallization interface in the direction of the coordinate axes of the three-dimensional rectangular coordinate system.

[0063] Specifically, the first directional derivative of the objective function in the x-axis direction reflects the temperature gradient of the temperature of the target grid surface in the x-axis direction; the second directional derivative of the objective function in the y-axis direction reflects the temperature gradient of the temperature of the target grid surface in the y-axis direction; the third directional derivative of the objective function in the z-axis direction reflects the temperature gradient of the temperature of the target grid surface in the z-axis direction.

[0064] When the temperature gradient of a target grid surface in a certain target crystal interface in a certain coordinate axis direction is relatively large, it indicates that the heat transfer of the target grid in this direction is serious. Correspondingly, the deformation degree of the target crystal interface here is also relatively large.

[0065] Step S104: Determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative.

[0066] In the embodiment of the present invention, when the directional derivative of the objective function in the coordinate axis direction of the three-dimensional rectangular coordinate system is obtained through step S103, the electronic device can determine the temperature change factor of the target grid surface through step S104.

[0067] Specifically, when the directional derivative of the objective function in the coordinate axis direction of the three-dimensional rectangular coordinate system includes the first directional derivative of the objective function in the x-axis direction, the second directional derivative of the objective function in the y-axis direction, and the third directional derivative of the objective function in the z-axis direction, the electronic device can calculate the temperature change factor of any target grid surface in the target crystal interface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative through the following formula:

[0068] (1)

[0069] Wherein, represents the temperature change factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; represents the third directional derivative.

[0070] It should be noted that, represents the magnitude of the temperature gradient of the center point of the target grid surface on the second plane formed by the x-axis and the y-axis, and since the temperature gradient is proportional to the heat flux density, therefore can also represent the magnitude of the heat flux density of the center point of the target grid surface in the temperature gradient direction parallel to the second plane. It can be understood that according to formula (1), when has a relatively large value, it indicates that the temperature gradient of the target grid surface in the x-axis direction is relatively large; correspondingly, when has a relatively large value, it indicates that the temperature gradient of the target grid surface in the y-axis direction is relatively large.

[0071] As an example, referring to Figure 4 , a schematic diagram of the deformation of a two-dimensional crystal interface provided by the present invention is shown; as Figure 4As shown, the degree of deformation of the two-dimensional crystal interface 2 is significantly greater than that of the two-dimensional crystal interface 1, but the heat flux density q in the x-axis direction of the two-dimensional crystal interface 2 x2 is less than the heat flux density q in the x-axis direction of the two-dimensional crystal interface 1 x1 ; when the two-dimensional crystal interface coincides with the isothermal surface, the direction of the heat flux density is perpendicular to the isothermal surface, that is, the direction of the heat flux density is perpendicular to the two-dimensional crystal interface. Therefore, the degree of deformation of the two-dimensional crystal interface is directly related to the ratio of the heat flux density in the x-axis direction to the heat flux density in the z-axis direction. The greater the ratio of the heat flux density in the x-axis direction to the heat flux density in the z-axis direction, the more severe the deformation of the two-dimensional crystal interface. Correspondingly, for the target crystal interface in the three-dimensional coordinate system, the greater the ratio of the heat flux density of the center point of the target grid surface in the temperature gradient direction parallel to the second plane to the heat flux density of the center point of the target grid surface in the z-axis direction, the more severe the deformation of the target crystal interface at this target grid surface.

[0072] The electronic device can respectively determine the temperature change factors of each target grid surface in the target crystal interface through step S104.

[0073] Step S105, determine the degree of deformation of the target crystal interface according to the temperature change factors of each of the target grid surfaces.

[0074] In the embodiment of the present invention, since the degree of deformation of the target crystal interface is related to the ratio of the heat flux density of the center point of the target grid surface in the temperature gradient direction parallel to the second plane to the heat flux density of the center point of the target grid surface in the z-axis direction, the temperature change factors of the target grid surfaces determined by the electronic device through step S104 reflect the change degree of the heat flux density of the target grid surface in the temperature gradient direction parallel to the second plane relative to the heat flux density of the target grid surface in the z-axis direction, that is, the temperature change factors of the target grid surfaces reflect the thermal field uniformity of the target grid surfaces in the thickness direction and width direction of the gallium oxide crystal.

[0075] After the electronic device determines the temperature change factors of each target grid surface in the target crystal interface through step S104, it can determine the degree of deformation of the target crystal interface according to the temperature change factors of each target grid surface in the target crystal interface.

[0076] Specifically, the temperature change factor of the target grid surface is positively correlated with the degree of deformation of the target crystal interface at this target grid surface. The greater the temperature change factor of the target grid surface, the greater the degree of deformation of the target crystal interface at this target grid surface.

[0077] In the embodiment of the present invention, the electronic device can first determine the maximum value of the temperature change factors of the target grid in the target crystal interface; then, determine the degree of deformation of the first target grid surface according to the maximum value of the temperature change factors.

[0078] Specifically, before step S105, the fluctuation range corresponding to the temperature change factor can be determined first according to experience or experimental data, and the fluctuation range can be divided into different sub-ranges; then, the degree of deformation corresponding to each sub-range is determined. Among them, the degree of deformation corresponding to the sub-range can be a text evaluation result such as "very serious deformation", "serious deformation", "general deformation", "slight deformation", "undeformed", etc.; it can also be a specific deformation degree value such as "0", "1", "2", "3", etc.

[0079] In step S105, after determining the maximum value of the temperature change factor of the target grid in the target crystal interface, the degree of deformation corresponding to the sub-range where the maximum value of the temperature change factor of the target grid in the target crystal interface is located can be determined as the degree of deformation of the target crystal interface.

[0080] As an example, the fluctuation range corresponding to the temperature change factor is 0 to 0.5; the different sub-ranges into which this fluctuation range is divided are: [0, 0.1), [0.1, 0.2), [0.2, 0.3), [0.3, 0.4), [0.4, 0.5]; among them, the degree of deformation corresponding to the sub-range [0, 0.1) is "undeformed", the degree of deformation corresponding to the sub-range [0.1, 0.2) is "slight deformation", the degree of deformation corresponding to the sub-range [0.2, 0.3) is "general deformation", the degree of deformation corresponding to the sub-range [0.3, 0.4) is "serious deformation", and the degree of deformation corresponding to the sub-range [0.4, 0.5] is "very serious deformation". In step S105, first determine that the maximum value of the temperature change factor of the target grid in the target crystal interface is 0.05; then determine that the sub-range where the maximum value of the temperature change factor of the target grid in the target crystal interface is located is [0, 0.1), and the degree of deformation corresponding to the sub-range [0, 0.1) is "undeformed", then determine that the degree of deformation of the target crystal interface is "undeformed".

[0081] In the embodiment of the present invention, the electronic device may include a display component and / or a voice component, and the electronic device can output the degree of deformation of the target crystal interface determined in step S105 in the form of text display and / or voice broadcast. Specifically, when the electronic device determines the degree of deformation of the target crystal interface through step S105, it can display the determined degree of deformation of the target crystal interface through the display component, and / or broadcast the determined degree of deformation of the target crystal interface through the voice component.

[0082] Related personnel can control the growth process of gallium oxide crystals and / or optimize the structure of the crystal growth furnace according to the deformation degree of the target crystal interface output by the electronic device, so as to improve the flatness of the three-dimensional non-axisymmetric crystal interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, and improve the crystal quality and stability of the gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method.

[0083] The method for determining the deformation degree of the crystal interface in the edge-defined film-fed growth (EFG) method of gallium oxide crystals provided by the embodiments of the present invention uses the temperature change factor of each target grid surface in the target crystal interface as the determination basis to determine the deformation degree of the target crystal interface, without relying on the subjective judgment of the observer, improving the accuracy and automation degree of the deformation degree of the crystal interface, and providing an intuitive and reliable reference basis for the control direction of the crystal growth process.

[0084] In an alternative embodiment, the objective function is the temperature field function corresponding to the target crystal interface; the calculating the directional derivative of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system in step S103 includes steps S1031 to S1034:

[0085] Step S1031: Calculate the first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system.

[0086] Step S1032: Calculate the second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system.

[0087] Step S1033: Calculate the third directional derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system.

[0088] Step S1034: Determine the first directional derivative, the second directional derivative, and the third directional derivative as the directional derivative of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system.

[0089] In the embodiments of the present invention, the objective function corresponding to the target crystal interface determined in step S102 is the temperature field function corresponding to the target crystal interface; the temperature field function can be expressed as T(x, y, z), where T represents the temperature of the target grid surface in the target crystal interface, x represents the x-axis coordinate of the target grid surface, y represents the y-axis coordinate of the target grid surface, and z represents the z-axis coordinate of the target grid surface.

[0090] During the process of the electronic device calculating the directional derivative of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system, it can first calculate the first directional derivative of the temperature field function in the x-axis direction ( ), the second directional derivative of the temperature field function in the y-axis direction ( ) and the third directional derivative of the temperature field function in the z-axis direction ( ); then determine the first directional derivative, the second directional derivative, and the third directional derivative as the directional derivatives of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system.

[0091] It can be understood that steps S1031 to S1033 can be executed simultaneously or sequentially, and the embodiment of the present invention does not limit the execution order of steps S1031 to S1033.

[0092] In an optional embodiment, when the objective function is the temperature field function corresponding to the objective crystal grain boundary, step S104 of determining the temperature change factor of the objective grid surface according to the three-dimensional coordinates of the objective grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes step S1041:

[0093] Step S1041: Determine the temperature change factor of the objective grid surface according to the three-dimensional coordinates of the objective grid surface in the three-dimensional rectangular coordinate system and the directional derivative. The temperature change factor of the objective grid surface is:

[0094] (2)

[0095] Wherein, represents the temperature change factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; represents the third directional derivative. represents substituting the three-dimensional coordinates of the objective grid surface in the three-dimensional rectangular coordinate system into to obtain a numerical value.

[0096] In an embodiment of the present invention, in a scenario where the objective function is the temperature field function corresponding to the target crystal interface, regardless of whether the target crystal interface is a preset horizontal plane or a crystal interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the electronic device can calculate the directional derivative of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system through steps S1031 to S1034, and determine the temperature change factor of the target grid surface through step S1041. By objectively and quantitatively reflecting the thermal field uniformity of the target crystal interface through the temperature change factor, and using the temperature change factors of each target grid surface as the judgment basis to determine the deformation degree of the target crystal interface, while improving the accuracy and automation of the deformation degree of the crystal interface, regardless of whether the target crystal interface is a preset horizontal plane or a crystal interface infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the determination of the temperature change factor of the target grid surface in the target crystal interface can be realized, expanding the application scope of the embodiment of the present invention.

[0097] In an alternative embodiment, step S102 of determining the objective function corresponding to the target crystal interface according to the temperature field includes steps S1021 to S1023:

[0098] Step S1021: Obtain the temperature of the target grid surface according to the temperature field.

[0099] Step S1022: When the temperatures of the target grid surfaces in the target crystal interface are uniform, determine the function of the z-axis coordinate of the target crystal interface relative to the x-axis coordinate and the y-axis coordinate in the three-dimensional rectangular coordinate system according to the temperature field.

[0100] Step S1023: Determine the function of the z-axis coordinate of the target crystal interface relative to the x-axis coordinate and the y-axis coordinate in the three-dimensional rectangular coordinate system as the objective function corresponding to the target crystal interface.

[0101] In an embodiment of the present invention, when the target crystallization interface is a crystallization interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, since the temperature of each target grid surface in the target crystallization interface is uniform, the temperature parameter in the temperature field function of the temperature field where the target crystallization interface is located can be regarded as a constant, and the temperature field function can be simplified to a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate, and the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate is determined as the target function corresponding to the target crystallization interface. In this scenario, the target function can be expressed as z(x, y), where z represents the z-axis coordinate of the target grid surface in the three-dimensional rectangular coordinate system, x represents the x-axis coordinate of the target grid surface, and y represents the y-axis coordinate of the target grid surface.

[0102] Specifically, when the target function corresponding to the target crystallization interface is a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate, the electronic device can first obtain the temperature of the target grid surface according to the temperature field where the target crystallization interface is located, and then, when the temperature of each target crystallization interface in the target crystallization interface is uniform, by defaulting that the temperatures of each target grid surface in the target crystallization interface are equal, taking the average value of the temperatures of each target grid surface as the temperature of the target crystallization interface. Thus, regarding the temperature of the target crystallization interface as a constant, the temperature field function corresponding to the temperature field where the target crystallization interface is located can be simplified to a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate; finally, the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate is determined as the target function corresponding to the target crystallization interface.

[0103] Among them, the temperature of the target grid surface obtained by the electronic device according to the temperature field where the target crystallization interface is located is the temperature of the center point of each target grid surface in the target crystallization interface.

[0104] After obtaining the temperatures of each target grid surface in the target crystallization interface through step S1021, the electronic device can compare the temperatures of each target grid surface; when the temperatures of each target grid surface are the same or the temperature difference between each target grid surface is less than the first preset threshold, it is determined that the temperatures of each target grid surface in the target crystallization interface are uniform; when the temperatures of each target grid surface are different and the temperature difference between each target grid surface is greater than or equal to the first preset threshold, it is determined that the temperatures of each target grid surface in the target crystallization interface are non-uniform; when the temperatures of each target grid surface in the target crystallization interface are uniform, the electronic device continues to execute steps S1022 to S1023 to determine the target function corresponding to the target crystallization interface; when the temperatures of each target grid surface in the target crystallization interface are non-uniform, the electronic device can execute steps S1031 to S1034 to calculate the directional derivatives of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system, and execute step S1041 to determine the temperature change factor of the target grid surface.

[0105] In an alternative embodiment, step S103 of calculating the directional derivatives of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system includes steps S1035 to S1037:

[0106] Step S1035: Calculate the fourth directional derivative of the target function in the x-axis direction of the three-dimensional rectangular coordinate system.

[0107] Step S1036: Calculate the fifth directional derivative of the target function in the y-axis direction of the three-dimensional rectangular coordinate system.

[0108] Step S1037: Determine the fourth directional derivative and the fifth directional derivative as the directional derivatives of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system.

[0109] In the embodiment of the present invention, when the target function corresponding to the target crystallization interface is a function of the z-axis coordinate relative to the x-axis coordinate and the y-axis coordinate in the three-dimensional rectangular coordinate system, the electronic device can calculate the directional derivatives of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system through steps S1035 to S1037; in this scenario, the directional derivatives include: the fourth directional derivative of the target function in the x-axis direction of the three-dimensional rectangular coordinate system ( ), and the fifth directional derivative of the target function in the y-axis direction of the three-dimensional rectangular coordinate system ( ).

[0110] Specifically, the electronic device first calculates the fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system and the fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system through steps S1035 and S1036 respectively; then determines the directional derivatives of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system with the fourth directional derivative and the fifth directional derivative.

[0111] It can be understood that steps S1035 and S1036 can be executed simultaneously or sequentially, and the embodiment of the present invention does not limit the execution order of steps S1035 and S1036.

[0112] In an alternative embodiment, when the objective function corresponding to the target crystal interface is a function of the z-axis coordinate of the target crystal interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate, step S104 of determining the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes step S1042:

[0113] Step S1042: Determine the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, and the temperature change factor of the target grid surface is:

[0114] (3)

[0115] Wherein, represents the fourth directional derivative; represents the fifth directional derivative. represents substituting the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system into to obtain the numerical value.

[0116] It should be noted that in the scenario where the objective function corresponding to the target crystal interface is a function of the z-axis coordinate of the target crystal interface in the three-dimensional rectangular coordinate system with respect to the x-axis coordinate and the y-axis coordinate, that is, the target crystal interface is a crystal interface that is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal, the electronic device can also determine the objective function corresponding to the target crystal interface through steps S1021 to S1023, determine the directional derivatives of the objective function in the coordinate axis directions of the three-dimensional rectangular coordinate system through steps S1035 to S1037, and determine the temperature change factor of the target grid surface through step S1042, providing multiple optional implementation methods for different application scenarios and improving the feasibility of the embodiment of the present invention.

[0117] In an optional embodiment, the step S105 of determining the deformation degree of the target crystallization interface according to the temperature change factor of each target mesh surface includes steps S1051 to S1052:

[0118] Step S1051: Determine a thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor.

[0119] Step S1052: Determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0120] In an embodiment of the present invention, when the electronic device determines the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface, it can also first determine the thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor, and then determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0121] Among them, the thermal field uniformity evaluation result is used to reflect the uniformity of temperature distribution of each target grid surface in the target crystallization interface; the thermal field uniformity is negatively correlated with the temperature change factor. When the temperature change factor of the target grid surface is larger, the temperature change of the target grid surface is more drastic, and the temperature distribution of each target grid surface in the target crystallization interface is more uneven, that is, the thermal field uniformity of the target crystallization interface is worse.

[0122] In the embodiment of the present invention, an evaluation threshold corresponding to the temperature change factor may be preset, and the thermal field uniformity evaluation result of the target crystallization interface may be determined based on the magnitude relationship between the temperature change factor of the target grid surface and the evaluation threshold.

[0123] Specifically, the evaluation threshold corresponding to the temperature change factor includes a first evaluation threshold and a second evaluation threshold, and the first evaluation threshold is greater than the second evaluation threshold; when the electronic device obtains the temperature change factor of each target grid surface through step S104, the temperature change factor of the target grid surface can be compared with the first evaluation threshold and the second evaluation threshold. When the temperature change factor is greater than or equal to the first evaluation threshold, the thermal field uniformity evaluation result is determined to be poor thermal field uniformity of the target crystallization interface; when the temperature change factor is less than the first evaluation threshold and greater than or equal to the second evaluation threshold, the thermal field uniformity evaluation result is determined to be average thermal field uniformity of the target crystallization interface; when the temperature change factor is less than the second evaluation threshold, the thermal field uniformity evaluation result is determined to be good thermal field uniformity of the target crystallization interface. Exemplarily, the first evaluation threshold is 0.2 and the second evaluation threshold is 0.05.

[0124] It should be noted that the thermal field uniformity is related to the deformation degree of the target crystallization interface; the better the thermal field uniformity of the target crystallization interface, the smoother the temperature change of each target grid surface in the target crystallization interface, which means that the ratio of the temperature gradient in the x-axis or y-axis direction to the temperature gradient in the z-axis direction of the target grid surface is smaller, and the deformation degree of the target crystallization interface is smaller.

[0125] In an embodiment of the present invention, a mapping relationship between the evaluation result of the thermal field uniformity and the deformation degree of the crystallization interface can also be established and stored in a preset storage area accessible by the electronic device. In step S1052, the electronic device can obtain the mapping relationship between the evaluation result of the thermal field uniformity and the deformation degree of the crystallization interface from the preset storage area, and determine the deformation degree corresponding to the evaluation result of the thermal field uniformity of the target crystallization interface determined in step S1051 according to the mapping relationship between the evaluation result of the thermal field uniformity and the deformation degree of the crystallization interface, and determine this deformation degree as the deformation degree of the target crystallization interface.

[0126] Exemplarily, in the mapping relationship between the evaluation result of the thermal field uniformity and the deformation degree of the crystallization interface, the deformation degree corresponding to the evaluation result of "poor thermal field uniformity" of the thermal field uniformity is "serious deformation", the deformation degree corresponding to the evaluation result of "general thermal field uniformity" of the thermal field uniformity is "general deformation", and the deformation degree corresponding to the evaluation result of "good thermal field uniformity" of the thermal field uniformity is "slight deformation". When the evaluation result of the thermal field uniformity of the target crystallization interface determined in step S1051 is that the thermal field uniformity of the target crystallization interface is good, the electronic device can determine the deformation degree of the target crystallization interface as slight deformation of the target crystallization interface according to the mapping relationship between the evaluation result of the thermal field uniformity and the deformation degree of the crystallization interface.

[0127] The method for determining the deformation degree of the interface of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method provided by the embodiment of the present invention uses the temperature change factor of each target grid surface in the target crystallization interface as the judgment basis to determine the deformation degree of the target crystallization interface, does not rely on the subjective judgment of the observer, improves the accuracy and automation degree of the deformation degree of the crystallization interface, and provides an intuitive and reliable reference basis for the control direction of the crystal growth process.

[0128] Refer to Figure 5 , which shows a flowchart of the steps of a method for optimizing the interface of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method of the present invention. The method may specifically include the following steps S201 to step S202:

[0129] Step S201, obtain the deformation degree of the target crystallization interface.

[0130] Among them, the target crystallization interface is the crystallization interface determined from the target calculation domain; the target calculation domain is obtained by meshing the target geometric model, and the target geometric model is a three-dimensional geometric model established according to the crystal growth furnace and the gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method using the crystal growth furnace in a three-dimensional rectangular coordinate system. The target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal.

[0131] Step S202: Set a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface, so as to optimize the target crystallization interface by using the thermal resistance structure.

[0132] Among them, the thermal resistance structure is arranged above the first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to the second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block heat transfer of the crystal growth furnace in the x-axis direction and / or the y-axis direction.

[0133] In the embodiment of the present invention, the deformation degree of the target crystallization interface obtained in step S201 is the deformation degree of the target crystallization interface determined by the electronic device through the method for determining the deformation degree of the gallium oxide crystal growth interface by the edge-defined film-fed growth (EFG) method described in any one of the above.

[0134] After the electronic device determines and outputs the deformation degree of the target crystallization interface through the method for determining the deformation degree of the gallium oxide crystal growth interface by the edge-defined film-fed growth (EFG) method described in any one of the above, relevant personnel can obtain the deformation degree of the target crystallization interface output by the electronic device, and perform step S202 to optimize the structure of the crystal growth furnace according to the deformation degree of the target crystallization interface.

[0135] It can be understood that the greater the deformation degree of the target crystallization interface, the greater the ratio of the temperature gradient of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction to the temperature gradient in the z-axis direction, that is, the greater the ratio of the heat flux density of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction to the heat flux density in the z-axis direction, that is, the heat transfer of the target grid surface in the target crystallization interface in the x-axis direction and / or the y-axis direction is serious, which also means that the gradient of the target crystallization interface in the z-axis direction is greater or the deformation is greater. In the embodiment of the present invention, a thermal resistance structure is set in the crystal growth furnace according to the deformation degree of the target crystallization interface, so as to use the thermal resistance structure to block heat transfer of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system, thereby reducing the heat flux density of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system, and further achieving the purpose of reducing the deformation degree of the target crystallization interface and optimizing the target crystallization interface.

[0136] It should be noted that in the embodiments of the present invention, optimizing the target crystallization interface refers to reducing the deformation degree of the target crystallization interface and improving the flatness of the target crystallization interface.

[0137] Referring to Figure 6 , a schematic structural diagram of another target geometric model of the present invention is shown. The thermal resistance structure is a plate-like structure disposed above the first plane where the lowest point of the gallium oxide crystal is located and parallel to the first plane, and the first plane is parallel to the second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system.

[0138] It should be noted that as Figure 6 shown, since heaters are provided around the crystal growth furnace, the heat fluxes of the target crystallization interface in the x-axis direction and the y-axis direction cannot dissipate along the x-axis direction and the y-axis direction, and finally can only dissipate from the z-axis direction. In the embodiments of the present invention, a plate-like structure parallel to the first plane is disposed above the first plane where the lowest point of the gallium oxide crystal is located to block the heat transfer in the z-axis direction in the crystal growth furnace, so as to achieve the purpose of reducing the heat flux density of the crystal growth furnace in the x-axis direction and / or the y-axis direction of the three-dimensional rectangular coordinate system and reducing the deformation degree of the target crystallization interface.

[0139] It should be noted that the thermal resistance structure can be disposed at any position above the first plane where the lowest point of the gallium oxide crystal in the crystal growth furnace is located, that is, the distance between the thermal resistance structure and the first plane is greater than 0.

[0140] In the embodiments of the present invention, the thickness of the thermal resistance structure and / or the distance between the thermal resistance structure and the first plane can be adjusted according to the deformation degree of the target crystallization interface to obtain a relatively flat crystallization interface. Specifically, when the deformation degree of the target crystallization interface is large, the thickness of the thermal resistance structure can be increased and / or the distance between the thermal resistance structure and the first plane can be reduced; when the deformation degree of the target crystallization interface is small, the thickness of the thermal resistance structure can be reduced and / or the distance between the thermal resistance structure and the first plane can be increased.

[0141] Exemplarily, when the deformation degree of the target crystallization interface is small, referring to Figure 6 , a cover plate with a small thickness can be disposed in the crystal growth furnace as the thermal resistance structure; when the deformation degree of the target crystallization interface is large, referring to Figure 7 , a schematic structural diagram of still another target geometric model of the present invention is shown, and a heat insulation layer with a large thickness can be disposed in the crystal growth furnace as the thermal resistance structure.

[0142] It should be noted that when the deformation degree of the target crystallization interface is relatively large, while setting a relatively thick heat insulation layer in the crystal growth furnace as the thermal resistance structure, the upper heater in the crystal growth furnace can also be removed.

[0143] Referring to Figure 8 , a schematic diagram of the temperature change factor distribution of the target crystallization interface before optimizing the interface for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method according to the present invention is shown; referring to Figure 9 , a schematic diagram of the temperature change factor distribution of the target crystallization interface after optimizing the interface for growing gallium oxide crystals by the EFG method using a cover plate with a relatively small thickness as the thermal resistance structure according to the present invention is shown; referring to Figure 10 , a schematic diagram of the temperature change factor distribution of the target crystallization interface after optimizing the interface for growing gallium oxide crystals by the EFG method using a heat insulation layer with a relatively large thickness as the thermal resistance structure according to the present invention is shown; as Figures 8 to 10 shown, by increasing the thickness of the thermal resistance structure, the value of the temperature change factor in the target crystallization interface can be reduced, the thermal field uniformity of the target crystallization interface can be improved, and further the deformation degree of the target crystallization interface can be reduced.

[0144] The method for optimizing the interface for growing gallium oxide crystals by the EFG method provided by the embodiments of the present invention sets a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface, so as to optimize the target crystallization interface by using the thermal resistance structure, which is beneficial to accurately controlling the shape of the crystallization interface between the melt corresponding to the gallium oxide crystal and the gallium oxide crystal during the growth process of the gallium oxide crystal, so as to obtain a relatively flat crystallization interface, and further is beneficial to the stable growth of the gallium oxide crystal, and improves the crystal quality of the gallium oxide crystal grown by the EFG method using the crystal growth furnace.

[0145] In an optional embodiment, step S202 of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface includes steps S2021 to S2023:

[0146] Step S2021, when the deformation degree of the target crystallization interface is greater than the first deformation threshold, obtain a first difference between the deformation degree of the target crystallization interface and the first deformation threshold.

[0147] Step S2022, determine the target thickness of the thermal resistance structure according to the first difference.

[0148] Step S2023, set the thermal resistance structure with the target thickness in the crystal growth furnace.

[0149] In an embodiment of the present invention, in the process of setting a thermal resistance structure in a crystal growth furnace according to the deformation degree of a target crystal interface, the thickness of the thermal resistance structure can be adjusted according to the deformation degree of the target crystal interface to obtain a relatively flat crystal interface.

[0150] Specifically, the deformation degree of the target crystal interface obtained in step S201 is the deformation degree value of the target crystal interface. When the deformation degree of the target crystal interface is greater than the first deformation threshold, the first difference between the deformation degree of the target crystal interface and the first deformation threshold can be calculated, and the target thickness of the thermal resistance structure set in the crystal growth furnace can be determined according to the first difference.

[0151] Among them, the first deformation threshold is the deformation degree of the crystal interface that needs to adjust the shape of the target crystal interface; for example, the first deformation threshold can be 0.

[0152] Before step S2022, the thickness of the thermal resistance structure corresponding to different differences between the deformation degree of the crystal interface and the first deformation threshold can be determined in advance through a large number of experiments, and a thermal resistance structure thickness comparison table can be constructed according to the thickness of the thermal resistance structure corresponding to different differences between the deformation degree of the crystal interface and the first deformation threshold. In step S2022, relevant personnel can determine the thickness of the thermal resistance structure corresponding to the first difference obtained in step S2021 according to the thermal resistance structure thickness comparison table, and determine the thickness of the thermal resistance structure corresponding to the first difference as the target thickness of the thermal resistance structure.

[0153] It should be noted that the thickness of the thermal resistance structure corresponding to the difference between the deformation degree of the crystal interface and the first deformation threshold in the thermal resistance structure thickness comparison table is specifically: when the distance between the thermal resistance structure and the first plane remains unchanged, the thickness of the thermal resistance structure when the crystal interface is adjusted to a plane or a near-plane.

[0154] After determining the target thickness of the thermal resistance structure, the thermal resistance structure with the target thickness can be set in the crystal growth furnace according to the target thickness.

[0155] In an optional embodiment, step S202 of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystal interface includes steps S2024 to S2026:

[0156] Step S2024, when the deformation degree of the target crystal interface is greater than the first deformation threshold, obtain the first difference between the deformation degree of the target crystal interface and the first deformation threshold.

[0157] Step S2025, determine the distance between the thermal resistance structure and the first plane according to the first difference.

[0158] Step S2026: Set a thermal resistance structure in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

[0159] In the embodiment of the present invention, in the process of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystallization interface, the distance between the thermal resistance structure and the first plane can be adjusted according to the deformation degree of the target crystallization interface to obtain a relatively flat crystallization interface.

[0160] Specifically, the deformation degree of the target crystallization interface obtained in step S201 is the deformation degree value of the target crystallization interface. When the deformation degree of the target crystallization interface is greater than the first deformation threshold, the first difference between the deformation degree of the target crystallization interface and the first deformation threshold can be calculated, and the distance between the thermal resistance structure and the first plane can be determined according to the first difference.

[0161] Before step S2025, the distances between the thermal resistance structure and the first plane corresponding to different differences between the deformation degree of the crystallization interface and the first deformation threshold can be determined in advance through a large number of experiments, and a thermal resistance structure setting height comparison table can be constructed according to the distances between the thermal resistance structure and the first plane corresponding to different differences between the deformation degree of the crystallization interface and the first deformation threshold. In step S2025, relevant personnel can determine the distance between the thermal resistance structure and the first plane corresponding to the first difference obtained in step S2024 according to the thermal resistance structure setting height comparison table.

[0162] It should be noted that the distance between the thermal resistance structure and the first plane corresponding to the difference between the deformation degree of the crystallization interface and the first deformation threshold in the thermal resistance structure setting height comparison table is specifically: the distance between the thermal resistance structure and the first plane when the crystallization interface is adjusted to a plane or a near-plane while the thickness of the thermal resistance structure remains unchanged.

[0163] After determining the distance between the thermal resistance structure and the first plane, the thermal resistance structure can be set in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

[0164] The method for optimizing the interface of growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the embodiment of the present invention adjusts the thickness of the thermal resistance structure set in the crystal growth furnace or adjusts the distance between the thermal resistance structure and the first plane according to the deformation degree of the target crystallization interface, which is beneficial to accurately controlling the crystallization interface between the melt corresponding to the gallium oxide crystal and the gallium oxide crystal during the growth process of the gallium oxide crystal, thereby obtaining a relatively flat crystallization interface, and further being beneficial to the stable growth of the gallium oxide crystal, improving the crystal quality of the gallium oxide crystal grown by the EFG method using the crystal growth furnace. Moreover, the optimization method of the crystal growth furnace in the embodiment of the present invention is simple and easy to operate, improving the feasibility of the embodiment of the present invention.

[0165] Device Embodiment

[0166] An embodiment of the present invention also provides a device for determining the degree of interface deformation of a gallium oxide crystal grown by the edge-defined film-fed growth (EFG) method. Figure 11 The logic block diagram of a device for determining the degree of interface deformation of a gallium oxide crystal grown by the EFG method provided by an embodiment of the present invention is shown, as Figure 11 shown, the device may include:

[0167] A first determination module 1101, configured to determine a target crystallization interface from a target calculation domain, and perform a steady-state calculation on the target calculation domain to obtain the temperature field where the target crystallization interface is located; the target calculation domain is obtained by performing mesh division on a target geometric model, and the target geometric model is a three-dimensional geometric model established according to a crystal growth furnace and a gallium oxide crystal grown by the EFG method using the crystal growth furnace in a three-dimensional rectangular coordinate system, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and the melt corresponding to the gallium oxide crystal; at least two target grid surfaces constituting the target crystallization interface are included in the target calculation domain;

[0168] A second determination module 1102, configured to determine a target function corresponding to the target crystallization interface according to the temperature field; the target function is used to establish an association relationship between the temperature of the target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface;

[0169] A calculation module 1103, configured to calculate the directional derivative of the target function in the coordinate axis directions of the three-dimensional rectangular coordinate system;

[0170] A third determination module 1104, configured to determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative;

[0171] A fourth determination module 1105, configured to determine the degree of deformation of the target crystallization interface according to the temperature change factors of each target grid surface.

[0172] Optionally, the target function is a temperature field function corresponding to the target crystallization interface; the calculation module includes:

[0173] A first calculation sub-module, configured to calculate a first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system;

[0174] A second calculation sub-module, configured to calculate a second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system;

[0175] A third calculation sub-module, configured to calculate a third directional derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system;

[0176] A first determination sub-module, configured to determine the first directional derivative, the second directional derivative, and the third directional derivative as the directional derivatives of the objective function in the axis directions of the three-dimensional rectangular coordinate system.

[0177] Optionally, the third determination module includes:

[0178] A second determination sub-module, configured to determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, where the temperature change factor of the target grid surface is:

[0179] ,

[0180] where, represents the temperature change factor; represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; represents the third directional derivative.

[0181] Optionally, the second determination module includes:

[0182] An acquisition sub-module, configured to acquire the temperature of the target grid surface according to the temperature field;

[0183] A third determination sub-module, configured to determine a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate according to the temperature field when the temperatures of the target grid surfaces in the target crystallization interface are uniform;

[0184] A fourth determination sub-module, configured to determine the function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate as the objective function corresponding to the target crystallization interface.

[0185] Optionally, the calculation module includes:

[0186] A fourth calculation sub-module, configured to calculate a fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system;

[0187] A fifth calculation sub-module, configured to calculate a fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system;

[0188] A fifth determination sub-module, configured to determine the fourth directional derivative and the fifth directional derivative as the directional derivatives of the objective function in the axial directions of the three-dimensional rectangular coordinate system.

[0189] Optionally, the third determination module includes:

[0190] A sixth determination sub-module, configured to determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, where the temperature change factor of the target grid surface is:

[0191] ,

[0192] where, represents the fourth directional derivative; represents the fifth directional derivative.

[0193] Optionally, the fourth determination module includes:

[0194] A seventh determination sub-module, configured to determine a thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor;

[0195] An eighth determination sub-module, configured to determine the deformation degree of the target crystallization interface according to the thermal field uniformity evaluation result.

[0196] For the apparatus embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and for the related parts, please refer to the partial description of the method embodiment.

[0197] Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts among the embodiments can be referred to each other.

[0198] An embodiment of the present invention further provides an electronic device, including a memory and a processor. The memory is used to store a computer program, and the processor is used to implement the method for determining the deformation degree of the growth interface of a gallium oxide crystal by the guiding mode method as described above when executing the computer program.

[0199] An embodiment of the present application further provides a readable storage medium storing a computer program, and the computer program, when executed by a processor, implements the method for determining the deformation degree of the growth interface of a gallium oxide crystal by the guiding mode method as described above.

[0200] Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts among the embodiments can be referred to each other.

[0201] Those skilled in the art should understand that the embodiments of the present invention can be provided as a method, a device, or a computer program product. Therefore, the embodiments of the present invention can take the form of an all-hardware embodiment, an all-software embodiment, or an embodiment combining software and hardware aspects. Moreover, the embodiments of the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0202] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each flow and / or block in the flowchart and / or block diagram can be implemented by computer program instructions, and the combination of the flows and / or blocks in the flowchart and / or block diagram can also be implemented. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal devices generate a device for implementing the functions specified in Figure 1 one or more of the flows Figure 1 or blocks.

[0203] These computer program instructions can also be stored in a computer-readable memory that can guide the computer or other programmable data processing terminal devices to work in a predictive manner, so that the instructions stored in the computer-readable memory generate a manufactured product including an instruction device, and the instruction device implements the functions specified in Figure 1 one or more of the flows Figure 1 or blocks.

[0204] These computer program instructions can also be loaded onto the computer or other programmable data processing terminal devices, so that a series of operation steps are executed on the computer or other programmable terminal devices to generate a computer-implemented process. Therefore, the instructions executed on the computer or other programmable terminal devices provide steps for implementing the functions specified in Figure 1 one or more of the flows Figure 1 or blocks.

[0205] Although the preferred embodiments of the embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications to these embodiments once they know the basic creative concepts. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0206] Finally, it should also be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or terminal device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or terminal device comprising said element.

[0207] The above has introduced in detail a method for determining and optimizing the interface deformation degree of a gallium oxide crystal grown by the guiding mode method provided by the present invention. Specific examples are used in this text to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A method for determining the degree of interface deformation of gallium oxide crystals grown by guided mode method, characterized in that: The method comprises: A target crystallization interface is determined from a target calculation domain, and a steady-state calculation is performed on the target calculation domain to obtain a temperature field where the target crystallization interface is located; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system according to a crystal growth furnace and a gallium oxide crystal grown by the crystal growth furnace through a guided mode method, the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; the target calculation domain includes at least two target mesh surfaces constituting the target crystallization interface; Determining an objective function corresponding to the target crystallization interface according to the temperature field; the objective function is used to establish an association relationship between the temperature of a target grid surface in the target crystallization interface and the three-dimensional coordinates of the target grid surface; Calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; the directional derivative is used to reflect the temperature gradient of the temperature of the target grid surface in the direction of the coordinate axis of the three-dimensional rectangular coordinate system; Determine a temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative; the temperature change factor is used to reflect the degree of change of the heat flux density of the target grid surface in the temperature gradient direction parallel to the second plane relative to the heat flux density of the target grid surface in the z-axis direction of the three-dimensional rectangular coordinate system, and the deformation degree of the target crystallization interface is positively correlated with the ratio of the heat flux density of the target grid surface in the temperature gradient direction parallel to the second plane to the heat flux density of the target grid surface in the z-axis direction; the second plane is a plane formed by the x-axis and y-axis of the three-dimensional rectangular coordinate system; The degree of deformation of the target crystallization interface is determined according to the temperature change factor of each target grid surface.

2. The method according to claim 1, characterized in that The objective function is a temperature field function corresponding to the target crystallization interface; and calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system includes: Calculating a first directional derivative of the temperature field function in the x-axis direction of the three-dimensional rectangular coordinate system; Calculating a second directional derivative of the temperature field function in the y-axis direction of the three-dimensional rectangular coordinate system; Calculating a third derivative of the temperature field function in the z-axis direction of the three-dimensional rectangular coordinate system; The first directional derivative, the second directional derivative, and the third directional derivative are determined as directional derivatives of the objective function in the directions of coordinate axes of the three-dimensional rectangular coordinate system.

3. The method according to claim 2, characterized in that Determining the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes: According to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, the temperature change factor of the target grid surface is determined, and the temperature change factor of the target grid surface is: Wherein, U represents the temperature change factor; (x0, y0, z0) represents the three-dimensional coordinates; represents the first directional derivative; represents the second directional derivative; Represents the number of third-party guides.

4. The method according to claim 1, characterized in that: Determining the objective function corresponding to the target crystallization interface according to the temperature field includes: According to the temperature field, obtaining the temperature of the target grid surface; In the case where the temperature of each target grid surface in the target crystallization interface is uniform, determining a function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate according to the temperature field; A function of the z-axis coordinate of the target crystallization interface in the three-dimensional rectangular coordinate system relative to the x-axis coordinate and the y-axis coordinate is determined as a target function corresponding to the target crystallization interface.

5. The method according to claim 4, characterized in that The calculating the directional derivative of the objective function in the direction of the coordinate axis of the three-dimensional rectangular coordinate system includes: Calculating a fourth directional derivative of the objective function in the x-axis direction of the three-dimensional rectangular coordinate system; Calculating a fifth directional derivative of the objective function in the y-axis direction of the three-dimensional rectangular coordinate system; The fourth directional derivative and the fifth directional derivative are determined as directional derivatives of the objective function in the directions of coordinate axes of the three-dimensional rectangular coordinate system.

6. The method according to claim 5, characterized in that Determining the temperature change factor of the target grid surface according to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative includes: According to the three-dimensional coordinates of the target grid surface in the three-dimensional rectangular coordinate system and the directional derivative, the temperature change factor of the target grid surface is determined, and the temperature change factor of the target grid surface is: in, represents the fourth directional derivative; represents the fifth directional derivative.

7. The method according to claim 1, characterized in that Determining the deformation degree of the target crystallization interface according to the temperature change factor of each target grid surface includes: Determining a thermal field uniformity evaluation result of the target crystallization interface according to the temperature change factor; The degree of deformation of the target crystallization interface is determined according to the thermal field uniformity evaluation result.

8. A method for optimizing the interface of gallium oxide crystal grown by guided mode method, characterized in that: The method comprises: Obtaining the degree of deformation of a target crystallization interface determined by the method for determining the degree of deformation of an interface of a gallium oxide crystal grown by a guided mode method according to any one of claims 1 to 7; the target crystallization interface is a crystallization interface determined from a target calculation domain; the target calculation domain is obtained by meshing a target geometric model, the target geometric model is a three-dimensional geometric model established in a three-dimensional rectangular coordinate system based on a crystal growth furnace and a gallium oxide crystal grown by a guided mode method using the crystal growth furnace, and the target crystallization interface is a three-dimensional non-axisymmetric crystallization interface between the gallium oxide crystal and a melt corresponding to the gallium oxide crystal; According to the deformation degree of the target crystallization interface, a thermal resistance structure is arranged in the crystal growth furnace, so as to optimize the target crystallization interface by using the thermal resistance structure; The thermal resistance structure is arranged above a first plane where the lowest point of the gallium oxide crystal is located, and the first plane is parallel to a second plane formed by the x-axis and the y-axis of the three-dimensional rectangular coordinate system; the thermal resistance structure is a plate-like structure parallel to the first plane, and is used to block the crystal growth furnace from transferring heat in the x-axis direction and / or the y-axis direction.

9. The method according to claim 8, characterized in that The step of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystal interface comprises: When the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtaining a first difference between the deformation degree of the target crystallization interface and the first deformation threshold; determining a target thickness of the thermal resistance structure according to the first difference; A heat resistance structure having the target thickness is arranged in the crystal growth furnace.

10. The method according to claim 8, characterized in that The step of setting a thermal resistance structure in the crystal growth furnace according to the deformation degree of the target crystal interface comprises: When the deformation degree of the target crystallization interface is greater than a first deformation threshold, obtaining a first difference between the deformation degree of the target crystallization interface and the first deformation threshold; determining a distance between the thermal resistance structure and the first plane according to the first difference; A thermal resistance structure is arranged in the crystal growth furnace according to the distance between the thermal resistance structure and the first plane.

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