High-performance broadband cross-coupling radio frequency GaAs filtering Balun chip for satellite communication phased array

Abstract

The invention discloses a high-performance broadband cross-coupling radio frequency GaAs filtering Balun chip for a satellite communication phased array, which is applied to the field of radio frequency chips, and comprises a GaAs substrate and an IPD phase shift filtering Balun circuit arranged on the GaAs substrate, the IPD filtering Balun circuit comprises an input port and two output ports, the circuit comprises an input port, an output port and a capacitance-inductance resonance coupling network connected between the input port and the output port, and the capacitance-inductance resonance coupling network comprises six resonators and coupling elements, so that coupling between the resonators and between the resonators and the ports is realized, and the function of a phase-shift filtering balun of the circuit is realized. A novel circuit coupling topological structure is adopted, a new reverse implementation technology is adopted, the integrated design of a reverse function and a filtering function is combined, and an IPD processing technology is adopted, so that miniaturized and high-performance broadband phase-shifting filtering Balun is realized.

Description

Technical Field

[0001] The present invention relates to the field of chip technology, and in particular to a high-performance broadband cross-coupled radio frequency GaAs filtering balun chip for a satellite communication phased array. Background Art

[0002] Satellite Internet is mainly composed of three parts: space segment, ground segment and application segment. Phased array terminal is an important part of satellite Internet application segment and the link between satellite network and users. It can provide users with global broadband access, mobile communication, Internet of Things communication, positioning and timing services. With the development of satellite Internet communication industry, phased array terminal needs to meet the requirements of mass production, high integration and miniaturization. With the rapid development of wireless communication technology, communication system is developing in the direction of high performance, high reliability and miniaturization, which puts forward higher requirements on the performance, reliability and size of filter. Phase shift filter unit is one of the important components of phased array. In order to achieve better communication quality, the filter unit in phased array is required to have lower in-band loss and higher stopband suppression, and have stable phase shift characteristics, so as to improve communication capacity and more flexible beam pointing. In order to obtain steep attenuation edge and better stopband characteristics, the order of filter needs to be increased, but this will further increase the circuit size and introduce more insertion loss in the passband.

[0003] However, with the development of system miniaturization, the phase-shift filter unit in the system needs to have a smaller size. At present, the miniaturization technology of the phase-shift filter unit mainly realizes the miniaturization of the overall device by adopting new process methods. The IPD technology set on the GaAs substrate adopts a variety of advanced semiconductor processing technologies, such as photolithography, thin film deposition and etching processes, so that the processed devices have higher process accuracy at the micron level, and while ensuring high circuit integration, there is still low mutual interference. Summary of the invention

[0004] Purpose of the invention: In view of the deficiencies in the prior art, the present invention provides a high-performance broadband cross-coupled RF GaAs filtering balun chip for satellite communication phased arrays.

[0005] Technical solution, in order to solve the above technical problems, the present invention discloses a high-performance broadband cross-coupled radio frequency GaAs filtering balun chip for satellite communication phased array, comprising a GaAs dielectric substrate (31), a grounding metal layer (32), wherein the grounding metal layer (32) is arranged on the lower layer of the GaAs dielectric substrate (31), and an IPD phase shift filtering balun circuit is arranged on the upper layer of the GaAs dielectric substrate (31), wherein the circuit comprises an input port (1), a first output port (2) and a second output port (3), and a first transmission path and a second transmission path located between the input and output ports;

[0006] The input port (1), the first output port (2) and the second output port (3) are all ground-signal-ground GSG structures, and are respectively arranged on both sides of a GaAs dielectric substrate (31), and the input port (1) is directly opposite to the first output port (2) and the second output port (3); the IPD phase-shift filter balun circuit penetrates the GaAs dielectric substrate (31) and is connected to the ground metal layer (32) via a grounding column (30); the first transmission path and the second transmission path are located on the other two sides of the GaAs dielectric substrate (31) and are directly opposite to each other;

[0007] The first transmission path is composed of a first resonant network, a first input external coupling network and a first output external coupling network; the second transmission path is composed of a second resonant network, a second input external coupling network and a second output external coupling network; the first resonant network is connected to the input port (1) through the first input external coupling network, and is connected to the first output port (2) through the first output external coupling network; the second resonant network is connected to the input port (1) through the second input external coupling network, and is connected to the second output port (3) through the second output external coupling network.

[0008] Furthermore, the first resonant network comprises a first resonator, a second resonator and a third resonator, wherein one end of the first inductor (4) is connected to one end of the first capacitor (5) via a microstrip connecting line, and the other ends of the first inductor (4) and the first capacitor (5) are grounded via a grounding column (30) to form a first resonator in parallel; one end of the second inductor (6) is connected to one end of the second capacitor (7) via a microstrip connecting line, and the other ends of the second inductor (6) and the second capacitor (7) are grounded via a grounding column (30) to form a second resonator in parallel; one end of the third inductor (8) is connected to one end of the third capacitor (9) via a microstrip connecting line, and the other ends of the third inductor (8) and the third capacitor (9) are grounded via a grounding column (30) to form a third resonator in parallel;

[0009] The first resonator and the second resonator are connected and coupled by a first internal coupling inductor (10), the second resonator and the third resonator are connected and coupled by a second internal coupling inductor (11), and the first resonator and the third resonator are connected and coupled by a third internal coupling inductor (12). The first resonator, the second resonator, and the third resonator are internally coupled elements arranged in a triangle to form a first resonant network, and the left end of the third internal coupling inductor (12) is the input end of the first resonant network, and the right end is the output end of the first resonant network.

[0010] Furthermore, the first input external coupling network is composed of a first input external coupling inductor (13) and a first input external coupling capacitor (14); one end of the first input external coupling inductor (13) is connected to the input port (1), and the other end is connected to the input end of the first resonant network via a microstrip connecting line; one end of the first input external coupling capacitor (14) is connected to the first input external coupling inductor (13), and the other end is grounded via a grounding column (30); the first input external coupling network realizes coupling between the input port (1) and the first resonant network.

[0011] Furthermore, the first output external coupling network is composed of a first output external coupling inductor (15) and a first output external coupling capacitor (16); one end of the first output external coupling inductor (15) is connected to the first output port (2), and the other end is connected to the output end of the first resonant network via a microstrip connecting line; one end of the first output external coupling capacitor (16) is connected to the first output external coupling inductor (15), and the other end is grounded via a grounding column (30); the first output external coupling network realizes coupling between the first output port (2) and the first resonant network.

[0012] Furthermore, the second resonant network comprises a fourth resonator, a fifth resonator and a sixth resonator, one end of the fourth inductor (17) is connected to one end of the fourth capacitor (18) via a microstrip connecting line, and the other ends of the fourth inductor (17) and the fourth capacitor (18) are both grounded via a grounding column (30) to form a fourth resonator in parallel; one end of the fifth inductor (21) is connected to one end of the fifth capacitor (22) via a microstrip connecting line, and the other ends of the fifth inductor (21) and the fifth capacitor (22) are both grounded via a grounding column (30) to form a fifth resonator in parallel; one end of the sixth inductor (19) is connected to one end of the third capacitor (20) via a microstrip connecting line, and the other ends of the sixth inductor (19) and the third capacitor (20) are both grounded via a grounding column (30) to form a sixth resonator in parallel;

[0013] The fourth resonator and the fifth resonator are connected and coupled via a first internal coupling capacitor (24), the fifth resonator and the sixth resonator are connected and coupled via a fourth internal coupling inductor (23), and the fourth resonator and the sixth resonator are connected and coupled via a second internal coupling capacitor (25). The fourth resonator, the fifth resonator, and the sixth resonator, i.e., their internal coupling elements, are arranged in a triangle to form a second resonant network, and the left end of the second internal coupling capacitor (25) is the input end of the second resonant network, and the right end is the output end of the second resonant network.

[0014] Furthermore, the second input external coupling network is composed of a second input external coupling inductor (26) and a second input external coupling capacitor (27); one end of the second input external coupling inductor (26) is connected to the input port (1), and the other end is connected to the input end of the second resonant network via a microstrip connecting line; one end of the second input external coupling capacitor (27) is connected to the second input external coupling inductor (26), and the other end is grounded via a grounding column (30); the second input external coupling network realizes the coupling between the input port (1) and the second resonant network.

[0015] Furthermore, the second output external coupling network is composed of a second output external coupling inductor (28) and a second output external coupling capacitor (29); one end of the second output external coupling inductor (28) is connected to the second output port (3), and the other end is connected to the output end of the second resonant network via a microstrip connecting line; one end of the second output external coupling capacitor (29) is connected to the other end of the second output external coupling inductor (28), and the other end is grounded via a grounding column (30); the second output external coupling network realizes coupling between the second output port (3) and the second resonant network.

[0016] Beneficial effects: Compared with the prior art, the technical solution of the present invention has the following beneficial technical effects:

[0017] (1) The present invention provides a filtering balun chip using IPD technology, wherein the capacitors are all MIM planar capacitors, and the inductors are spiral inductors obtained by processing using thin-film IPD technology, both of which have high integration, reducing the volume of the inductor and capacitor, and also reducing the volume of the overall circuit, thereby realizing miniaturization of the circuit.

[0018] (2) This circuit is a chip designed using a comprehensive design method, which has high reproducibility and can more easily use the comprehensive design method to obtain circuits with other values. In addition, the circuit chip size is small, the thickness is thin, and the circuit performance is good. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods, so as to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, and the advantages and implementation methods of the present invention will be more obvious. The contents of the accompanying drawings are only used to illustrate and explain the present invention, but will not constitute any limitation to the present invention in any sense. In the accompanying drawings:

[0020] Figure 1 It is a schematic diagram of the three-dimensional structure of a high-performance radio frequency balun filter based on the IPD processing technology of the present invention.

[0021] Figure 2 It is an equivalent circuit diagram of a high-performance radio frequency balun filter based on the IPD processing technology of the present invention.

[0022] Figure 3 It is an S parameter curve diagram of a high-performance radio frequency balun filter based on the IPD processing technology of the present invention.

[0023] Figure 4 It is a phase response curve diagram of a high-performance radio frequency balun filter based on the IPD processing technology of the present invention. DETAILED DESCRIPTION

[0024] The embodiments of the present invention will be described below in conjunction with the accompanying drawings. The implementation modes shown in the accompanying drawings are only exemplary and are intended to explain the principles of the present invention, but are not intended to limit the scope of the present invention.

[0025] like Figure 1 As shown, the present invention discloses a high-performance broadband cross-coupled radio frequency GaAs filtering balun chip for satellite communication phased array, comprising a GaAs dielectric substrate (31), a grounding metal layer (32), wherein the grounding metal layer (32) is arranged on the lower layer of the GaAs dielectric substrate (31), and an IPD phase shift filtering balun circuit is arranged on the upper layer of the GaAs dielectric substrate (31), wherein the circuit comprises an input port (1), a first output port (2) and a second output port (3), and a first transmission path and a second transmission path located between the input and output ports;

[0026] The input port (1), the first output port (2) and the second output port (3) are all ground-signal-ground GSG structures, and are respectively arranged on both sides of a GaAs dielectric substrate (31), and the input port (1) is directly opposite to the first output port (2) and the second output port (3); the IPD phase-shift filter balun circuit penetrates the GaAs dielectric substrate (31) and is connected to the ground metal layer (32) via a grounding column (30); the first transmission path and the second transmission path are located on the other two sides of the GaAs dielectric substrate (31) and are directly opposite to each other;

[0027] The first transmission path is composed of a first resonant network, a first input external coupling network and a first output external coupling network; the second transmission path is composed of a second resonant network, a second input external coupling network and a second output external coupling network; the first resonant network is connected to the input port (1) through the first input external coupling network, and is connected to the first output port (2) through the first output external coupling network; the second resonant network is connected to the input port (1) through the second input external coupling network, and is connected to the second output port (3) through the second output external coupling network.

[0028] Furthermore, the first resonant network comprises a first resonator, a second resonator and a third resonator, wherein one end of the first inductor (4) is connected to one end of the first capacitor (5) via a microstrip connecting line, and the other ends of the first inductor (4) and the first capacitor (5) are grounded via a grounding column (30) to form a first resonator in parallel; one end of the second inductor (6) is connected to one end of the second capacitor (7) via a microstrip connecting line, and the other ends of the second inductor (6) and the second capacitor (7) are grounded via a grounding column (30) to form a second resonator in parallel; one end of the third inductor (8) is connected to one end of the third capacitor (9) via a microstrip connecting line, and the other ends of the third inductor (8) and the third capacitor (9) are grounded via a grounding column (30) to form a third resonator in parallel;

[0029] The first resonator and the second resonator are connected and coupled by a first internal coupling inductor (10), the second resonator and the third resonator are connected and coupled by a second internal coupling inductor (11), and the first resonator and the third resonator are connected and coupled by a third internal coupling inductor (12). The first resonator, the second resonator, and the third resonator are internally coupled elements arranged in a triangle to form a first resonant network, and the left end of the third internal coupling inductor (12) is the input end of the first resonant network, and the right end is the output end of the first resonant network.

[0030] Furthermore, the first input external coupling network is composed of a first input external coupling inductor (13) and a first input external coupling capacitor (14); one end of the first input external coupling inductor (13) is connected to the input port (1), and the other end is connected to the input end of the first resonant network via a microstrip connecting line; one end of the first input external coupling capacitor (14) is connected to the first input external coupling inductor (13), and the other end is grounded via a grounding column (30); the first input external coupling network realizes coupling between the input port (1) and the first resonant network.

[0031] Furthermore, the first output external coupling network is composed of a first output external coupling inductor (15) and a first output external coupling capacitor (16); one end of the first output external coupling inductor (15) is connected to the first output port (2), and the other end is connected to the output end of the first resonant network via a microstrip connecting line; one end of the first output external coupling capacitor (16) is connected to the first output external coupling inductor (15), and the other end is grounded via a grounding column (30); the first output external coupling network realizes coupling between the first output port (2) and the first resonant network.

[0032] Furthermore, the second resonant network comprises a fourth resonator, a fifth resonator and a sixth resonator, one end of the fourth inductor (17) is connected to one end of the fourth capacitor (18) via a microstrip connecting line, and the other ends of the fourth inductor (17) and the fourth capacitor (18) are both grounded via a grounding column (30) to form a fourth resonator in parallel; one end of the fifth inductor (21) is connected to one end of the fifth capacitor (22) via a microstrip connecting line, and the other ends of the fifth inductor (21) and the fifth capacitor (22) are both grounded via a grounding column (30) to form a fifth resonator in parallel; one end of the sixth inductor (19) is connected to one end of the third capacitor (20) via a microstrip connecting line, and the other ends of the sixth inductor (19) and the third capacitor (20) are both grounded via a grounding column (30) to form a sixth resonator in parallel;

[0033] The fourth resonator and the fifth resonator are connected and coupled via a first internal coupling capacitor (24), the fifth resonator and the sixth resonator are connected and coupled via a fourth internal coupling inductor (23), and the fourth resonator and the sixth resonator are connected and coupled via a second internal coupling capacitor (25). The fourth resonator, the fifth resonator, and the sixth resonator, i.e., their internal coupling elements, are arranged in a triangle to form a second resonant network, and the left end of the second internal coupling capacitor (25) is the input end of the second resonant network, and the right end is the output end of the second resonant network.

[0034] Furthermore, the second input external coupling network is composed of a second input external coupling inductor (26) and a second input external coupling capacitor (27); one end of the second input external coupling inductor (26) is connected to the input port (1), and the other end is connected to the input end of the second resonant network via a microstrip connecting line; one end of the second input external coupling capacitor (27) is connected to the second input external coupling inductor (26), and the other end is grounded via a grounding column (30); the second input external coupling network realizes the coupling between the input port (1) and the second resonant network.

[0035] Furthermore, the second output external coupling network is composed of a second output external coupling inductor (28) and a second output external coupling capacitor (29); one end of the second output external coupling inductor (28) is connected to the second output port (3), and the other end is connected to the output end of the second resonant network via a microstrip connecting line; one end of the second output external coupling capacitor (29) is connected to the other end of the second output external coupling inductor (28), and the other end is grounded via a grounding column (30); the second output external coupling network realizes coupling between the second output port (3) and the second resonant network.

[0036] like Figure 2 As shown, the capacitors in the embodiments of the present invention are all MIM capacitors in the IPD process, and the specific parameter settings of each capacitor are shown in Table 1.

[0037] Table 1

[0038]

[0039]

[0040] The spiral inductors in the embodiments of the present invention are formed by spirally winding multiple turns of transmission lines, and are all spiral transmission line inductors designed by IPD process. The spiral inductors in the embodiments of the present invention include L1-L14, and the specific parameter settings of each spiral inductor are shown in Table 2.

[0041] Table 2

[0042]

[0043] Furthermore, if Figure 3 and Figure 4 As shown, the simulation results of the example of the present invention are that its center frequency is 9.9Ghz, bandwidth is 2.3Ghz, passband is 8.75Ghz-11.05Ghz, insertion loss is ≤15dB in its passband, a zero point is added outside the band to increase frequency selectivity, and its first output port and second output port have a phase deviation of 180°, achieving the filtering balun effect of the entire circuit. The physical circuit size is 1.8mm*1.4mm, the passband range is 8.35GHz-11.02GHz, the center frequency is 9.68GHz, the return loss is better than 15dB, and the phase deviation is 180°±7°.

[0044] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, chip, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, chip, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, chip, article or device including the elements. The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are included in the scope of protection of the present invention.

Claims

1. A high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array, characterized in that: The invention comprises a GaAs dielectric substrate (31) and a grounding metal layer (32), wherein the grounding metal layer (32) is arranged on the lower layer of the GaAs dielectric substrate (31), and an IPD phase shift filter balun circuit is arranged on the upper layer of the GaAs dielectric substrate (31), wherein the circuit comprises an input port (1), a first output port (2) and a second output port (3), and a first transmission path and a second transmission path located between the input and output ports; The input port (1), the first output port (2), and the second output port (3) are all ground-signal-ground GSG structures, and are respectively arranged on both sides of the GaAs dielectric substrate (31), and the input port (1) is directly opposite to the first output port (2) and the second output port (3); the first transmission path and the second transmission path are located on the other two sides of the GaAs dielectric substrate (31) and are directly opposite to each other; The IPD phase-shift filter balun circuit is connected to a ground metal layer (32) through a grounding column (30) penetrating a GaAs dielectric substrate (31); The first transmission path is composed of a first resonant network, a first input external coupling network and a first output external coupling network; The second transmission path is composed of a second resonant network, a second input external coupling network and a second output external coupling network; the first resonant network is connected to the input port (1) through the first input external coupling network, and is connected to the first output port (2) through the first output external coupling network; the second resonant network is connected to the input port (1) through the second input external coupling network, and is connected to the second output port (3) through the second output external coupling network.

2. According to claim 1, a high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array, characterized in that: The first resonant network comprises a first resonator, a second resonator and a third resonator, wherein one end of the first inductor (4) is connected to one end of the first capacitor (5) via a microstrip connecting line, and the other ends of the first inductor (4) and the first capacitor (5) are grounded via a grounding column (30) to form a first resonator in parallel; one end of the second inductor (6) is connected to one end of the second capacitor (7) via a microstrip connecting line, and the other ends of the second inductor (6) and the second capacitor (7) are grounded via a grounding column (30) to form a second resonator in parallel; one end of the third inductor (8) is connected to one end of the third capacitor (9) via a microstrip connecting line, and the other ends of the third inductor (8) and the third capacitor (9) are grounded via a grounding column (30) to form a third resonator in parallel; The first resonator and the second resonator are connected and coupled by a first internal coupling inductor (10), the second resonator and the third resonator are connected and coupled by a second internal coupling inductor (11), and the first resonator and the third resonator are connected and coupled by a third internal coupling inductor (12). The first resonator, the second resonator, and the third resonator are internally coupled elements arranged in a triangle to form a first resonant network, and the left end of the third internal coupling inductor (12) is the input end of the first resonant network, and the right end is the output end of the first resonant network.

3. According to claim 1, a high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array, characterized in that: The first input external coupling network is composed of a first input external coupling inductor (13) and a first input external coupling capacitor (14); one end of the first input external coupling inductor (13) is connected to the input port (1), and the other end is connected to the input end of the first resonant network via a microstrip connection line; one end of the first input external coupling capacitor (14) is connected to the first input external coupling inductor (13), and the other end is grounded via a grounding column (30); the first input external coupling network realizes coupling between the input port (1) and the first resonant network.

4. The high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array according to claim 1, characterized in that: The first output external coupling network is composed of a first output external coupling inductor (15) and a first output external coupling capacitor (16); one end of the first output external coupling inductor (15) is connected to the first output port (2), and the other end is connected to the output end of the first resonant network via a microstrip connection line; one end of the first output external coupling capacitor (16) is connected to the first output external coupling inductor (15), and the other end is grounded via a grounding column (30); the first output external coupling network realizes coupling between the first output port (2) and the first resonant network.

5. The high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array according to claim 1, characterized in that: The second resonant network comprises a fourth resonator, a fifth resonator and a sixth resonator; one end of the fourth inductor (17) is connected to one end of the fourth capacitor (18) via a microstrip connecting line, and the other ends of the fourth inductor (17) and the fourth capacitor (18) are both grounded via a grounding column (30) to form a fourth resonator in parallel; one end of the fifth inductor (21) is connected to one end of the fifth capacitor (22) via a microstrip connecting line, and the other ends of the fifth inductor (21) and the fifth capacitor (22) are both grounded via a grounding column (30) to form a fifth resonator in parallel; one end of the sixth inductor (19) is connected to one end of the third capacitor (20) via a microstrip connecting line, and the other ends of the sixth inductor (19) and the third capacitor (20) are both grounded via a grounding column (30) to form a sixth resonator in parallel; The fourth resonator and the fifth resonator are connected and coupled via a first internal coupling capacitor (24), the fifth resonator and the sixth resonator are connected and coupled via a fourth internal coupling inductor (23), and the fourth resonator and the sixth resonator are connected and coupled via a second internal coupling capacitor (25). The fourth resonator, the fifth resonator, and the sixth resonator, i.e., their internal coupling elements, are arranged in a triangle to form a second resonant network, and the left end of the second internal coupling capacitor (25) is the input end of the second resonant network, and the right end is the output end of the second resonant network.

6. The high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array according to claim 1, characterized in that: The second input external coupling network is composed of a second input external coupling inductor (26) and a second input external coupling capacitor (27); one end of the second input external coupling inductor (26) is connected to the input port (1), and the other end is connected to the input end of the second resonant network via a microstrip connecting line; one end of the second input external coupling capacitor (27) is connected to the second input external coupling inductor (26), and the other end is grounded via a grounding column (30); the second input external coupling network realizes coupling between the input port (1) and the second resonant network.

7. The high-performance broadband cross-coupled RF GaAs filter balun chip for satellite communication phased array according to claim 1, characterized in that: The second output external coupling network is composed of a second output external coupling inductor (28) and a second output external coupling capacitor (29); one end of the second output external coupling inductor (28) is connected to the second output port (3), and the other end is connected to the output end of the second resonant network via a microstrip connecting line; one end of the second output external coupling capacitor (29) is connected to the other end of the second output external coupling inductor (28), and the other end is grounded via a grounding column (30); the second output external coupling network realizes coupling between the second output port (3) and the second resonant network.

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