Novel semiconductor structure and device and manufacturing method

Abstract

The invention discloses a novel semiconductor structure and device and a manufacturing method, and relates to the technical field of semiconductor device production, the novel semiconductor structure and device comprises a substrate, and the top surface of the substrate is provided with a diamond epitaxial layer; the top surface of the diamond epitaxial layer is divided into an N-type device region and a P-type device region, an aluminum nitride film is arranged on the diamond epitaxial layer in the N-type device region, and boron doping is carried out on the diamond epitaxial layer in the P-type device region in an ion implantation manner; the semiconductor structure and the semiconductor device provided by the invention, especially a CMOS (Complementary Metal Oxide Semiconductor) inverter and an integrated circuit, have larger forbidden bandwidth, higher working frequency, higher working voltage, higher power, higher temperature and wide application prospect; compared with an existing semiconductor device with a diamond substrate and a CMOS integrated circuit, the P-type device region is manufactured in a boron ion implantation mode, the P-type device region has higher hole mobility, and the semiconductor performance of a diamond material is brought into full play.

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