Wafer surface film growth inspection method and chemical vapor deposition equipment

Abstract

According to the wafer surface film growth inspection method and the chemical vapor deposition equipment provided by the invention, the to-be-processed wafers are placed on the conveying system, and the to-be-processed wafers are sequentially placed into the chemical reaction chambers through the conveying system; independently opening a nozzle of each chemical reaction chamber to inject process gas required by film growth into the chamber so as to deposit and form a film on the surface of the wafer to be processed; the film growing in each chemical reaction chamber is checked, if the film does not meet the preset process standard requirement, the operation of the chemical vapor deposition equipment is stopped, and troubleshooting is performed on the chemical reaction chamber where the film grows; and after the troubleshooting is finished, the to-be-processed wafer is continuously put into the next chemical reaction chamber for thin film growth and thin film inspection. According to the invention, the film growing in each chemical reaction chamber is individually inspected, the fault point can be rapidly and accurately positioned, maintenance personnel can conveniently carry out rapid troubleshooting and repairing, and the manpower and material resource cost is saved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer surface thin film growth inspection method and chemical vapor deposition equipment. Background Art

[0002] In the wafer manufacturing process, the Chemical Vapor Deposition (CVD) process is used to grow various thin films on the wafer surface, such as metal films, non-metallic films, multi-component alloy films, and ceramic or compound layers. These films play a vital role in semiconductor devices, such as protective passivation layers, conductive layers, insulating layers, etc. By precisely controlling the reaction conditions (such as temperature, pressure, gas flow rate and time), the growth rate, thickness and properties of the film can be precisely controlled to meet different application requirements.

[0003] Chemical vapor deposition equipment is mainly composed of chemical reaction chambers, conveyor belts (Muffle) and loading / unloading robotic arms (Handler). The chemical reaction chamber is mainly composed of process gas flow meters, process gas nozzles, exhaust and cooling systems, etc. This equipment has an impact on film thickness, film thickness uniformity, and film density.

[0004] In the prior art, when film thickness, film thickness uniformity, film density, etc. deteriorate, it is difficult to determine which chemical reaction chamber has a problem, and each possible fault point needs to be checked one by one, which leads to low troubleshooting efficiency and waste of manpower and material resources. Summary of the invention

[0005] The present invention provides a wafer surface thin film growth inspection method and chemical vapor deposition equipment, aiming to inspect the thin film growth status in real time, improve the inspection efficiency when the thin film growth is abnormal, and save manpower and material costs.

[0006] In order to achieve the above purpose and other advantages, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a method for inspecting thin film growth on a wafer surface, comprising:

[0008] Placing the wafer to be processed on a conveying system, and sequentially placing the wafer to be processed into each chemical reaction chamber through the conveying system;

[0009] Opening the nozzle of each chemical reaction chamber individually and injecting process gas required for thin film growth into the chamber to deposit and form a thin film on the surface of the wafer to be processed;

[0010] The thin film grown in each chemical reaction chamber is inspected. If the thin film does not meet the preset process standard requirements, the operation of the chemical vapor deposition equipment is suspended, and the chemical reaction chamber growing the thin film is troubleshooted. After the troubleshooting is completed, the wafer to be processed is placed in the next chemical reaction chamber for thin film growth and thin film inspection.

[0011] According to a method for inspecting thin film growth on a wafer surface provided by the present invention, the step of troubleshooting a chemical reaction chamber for growing the thin film comprises:

[0012] Use professional testing equipment to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities;

[0013] If any abnormality occurs, the nozzle and / or the exhaust pipe and / or the flow meter are repaired or replaced.

[0014] According to a method for inspecting thin film growth on a wafer surface provided by the present invention, the step of inspecting the thin film grown in each chemical reaction chamber comprises:

[0015] Measuring the film to obtain a measurement value, wherein the index for evaluating the film includes at least one of film thickness, film thickness uniformity, and film density;

[0016] The measured values ​​are analyzed and compared to evaluate whether the measured values ​​meet the expected process standard requirements.

[0017] According to a method for inspecting thin film growth on a wafer surface provided by the present invention, the step of measuring the thin film to obtain a measurement value comprises:

[0018] For film thickness and film thickness uniformity, a film thickness measuring instrument is used to measure and obtain measurement values;

[0019] For film compactness, the sample wafer is etched using hydrofluoric acid solution or buffered oxide etchant, and the etching rates are compared to obtain the measured values.

[0020] According to a method for inspecting thin film growth on a wafer surface provided by the present invention, the thin film includes: an LTO thin film, a PSG thin film or a BPSG thin film.

[0021] According to a wafer surface thin film growth inspection method provided by the present invention, when the grown thin film is an LTO thin film, the film growth time is set to 1.5 minutes.

[0022] A method for inspecting thin film growth on a wafer surface provided by the present invention further includes: recording process data of thin film growth by each nozzle, wherein the process data includes: at least one of thin film growth rate, temperature, pressure, and gas flow rate.

[0023] In a second aspect, the present invention provides a chemical vapor deposition device for performing any of the above-mentioned wafer surface thin film growth inspection methods, comprising:

[0024] at least one chemical reaction chamber, each of the chemical reaction chambers being provided with an independent nozzle;

[0025] A conveying system, used for conveying the wafers to be processed into each of the chemical reaction chambers in sequence;

[0026] A control system for controlling the opening and closing of the conveying system and the nozzle;

[0027] A detection system, used for inspecting the thin film grown on the surface of the wafer to be processed in each of the chemical reaction chambers;

[0028] The troubleshooting system is used to troubleshoot the chemical reaction chamber for growing the thin film when it is detected that the thin film growth result does not meet the preset process standard requirements.

[0029] According to a chemical vapor deposition device provided by the present invention, the detection system comprises:

[0030] A first detection module is used to measure the film thickness and the uniformity of the film thickness;

[0031] The second detection module is used to measure the density of the film.

[0032] According to a chemical vapor deposition device provided by the present invention, the fault troubleshooting system comprises:

[0033] Performance test module, used to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities;

[0034] The maintenance module is used to repair or replace the nozzle and / or the exhaust pipe and / or the flow meter when an abnormality occurs.

[0035] The present invention provides a wafer surface thin film growth inspection method and chemical vapor deposition equipment, which are as follows: by placing the wafer to be processed on a conveying system, the wafer to be processed is sequentially placed into each chemical reaction chamber through the conveying system; the nozzle of each chemical reaction chamber is opened separately to inject the process gas required for thin film growth into the chamber, so as to deposit and form a thin film on the surface of the wafer to be processed; the thin film grown in each chemical reaction chamber is inspected, and if the thin film does not meet the preset process standard requirements, the operation of the chemical vapor deposition equipment is suspended, the chemical reaction chamber for growing the thin film is troubleshooted, and after the troubleshooting is completed, the wafer to be processed is continued to be placed in the next chemical reaction chamber for thin film growth and thin film inspection. The present invention inspects the thin film grown in each chemical reaction chamber separately, can quickly and accurately locate the fault point, facilitates maintenance personnel to quickly troubleshoot and repair, saves manpower and material costs, and prevents unqualified wafers from flowing into the next process, thereby improving the quality of thin film growth. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other implementation methods can be obtained based on these drawings without paying any creative work.

[0037] Figure 1 It is a schematic flow chart of a method for inspecting thin film growth on a wafer surface provided by an embodiment of the present invention;

[0038] Figure 2 It is a schematic diagram of the working principle of the chemical vapor deposition equipment provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following specifically cites a preferred embodiment and describes it in detail with the accompanying drawings as follows.

[0040] It should be noted that it is explicitly and implicitly understood by those of ordinary skill in the art that the embodiments described in the present invention can be combined with other embodiments without conflict. Unless otherwise defined, the technical terms or scientific terms involved in the present invention should be the usual meanings understood by people with ordinary skills in the technical field to which the present invention belongs. The words "one", "a", "a", "the" and the like involved in the present invention do not indicate a quantitative limitation and may represent the singular or plural. The terms "including", "comprising", "having" and any of their variations involved in the present invention are intended to cover non-exclusive inclusions; the terms "first", "second", "third", etc. involved in the present invention are merely to distinguish similar objects and do not represent a specific ordering of objects.

[0041] The applicant found that in the wafer processing environment of the prior art, the wafer enters the multi-chamber of the chemical vapor deposition equipment in sequence for thin film growth. For example, when a LTO film with a film thickness of 9000A (angstroms) needs to be grown on the wafer, then in theory the wafer enters chambers 1, 2, and 3 in sequence to grow a film thickness of 3000A respectively. If the film thickness finally grown on the wafer is not 9000A, then it is necessary to confirm which chamber has grown a film thickness that does not meet the standard. At this time, it is necessary to confirm the single nozzle of each chamber, that is, to open the process gas of one of the chambers and close the process gases (silane, oxygen, nitrogen) of the other two chambers. The chamber with the process gas closed cannot grow a film. This means that each inspection must be checked separately for faults in each chamber, so it is difficult to quickly locate the problem chamber, which reduces the efficiency of troubleshooting. Therefore, the present invention provides a wafer surface thin film growth inspection method and chemical vapor deposition equipment, which can quickly and accurately locate the fault point, facilitate maintenance personnel to quickly troubleshoot and repair, and save manpower and material costs.

[0042] When it comes to method steps, the sequence illustrated in this document represents an exemplary solution, but does not mean a limitation on the sequence.

[0043] Reference Figure 1 As shown, an embodiment of the present invention provides a method for inspecting thin film growth on a wafer surface, comprising:

[0044] Step S1: placing the wafer to be processed on a conveying system, and sequentially placing the wafer to be processed into each chemical reaction chamber through the conveying system;

[0045] Step S2: opening the nozzle of each chemical reaction chamber separately to inject process gas required for thin film growth into the chamber, so as to deposit and form a thin film on the surface of the wafer to be processed;

[0046] Step S3: Inspect the thin film grown in each chemical reaction chamber. If the thin film does not meet the preset process standard requirements, suspend the operation of the chemical vapor deposition equipment, perform troubleshooting on the chemical reaction chamber where the thin film is grown, and after the troubleshooting is completed, continue to place the wafer to be processed into the next chemical reaction chamber for thin film growth and thin film inspection.

[0047] Specifically, refer to Figure 2 As shown, the wafer to be processed is placed on the Muffle of the conveying system, and the conveying system is turned on to transfer the wafer. When the wafer is transferred to the bottom of the chemical reaction chamber 1 (process chambers1), the wafer is placed in the chemical reaction chamber 1 by the robot arm (Handler). The nozzle of the chemical reaction chamber 1 is opened, and the process gas (silane, oxygen or nitrogen, etc.) required for film growth is injected. After a thin film is formed on the surface of the wafer at a preset gas flow rate, the nozzle is closed to stop injecting the process gas. The wafer is moved out of the chemical reaction chamber 1 by the robot arm, and the film grown by the nozzle is inspected. If the film meets the preset process standard requirements, the conveying system is turned on, and the track puts the wafer into the next chemical reaction chamber 2 (process chambers2) to continue film growth and film inspection. If the inspection finds that the film grown in the chemical reaction chamber 2 does not meet the preset process standard requirements, such as the wafer in the chemical reaction chamber 2 has no film attached, the operation of the chemical vapor deposition equipment is suspended, and the chemical reaction chamber 2 is troubleshooted, and after the troubleshooting is completed, the wafer to be processed is continued to be placed in the next chemical reaction chamber 3 (process chambers 3) for film growth and film inspection until chemical vapor deposition is completed in all chemical reaction chambers. In this way, the film grown in each chemical reaction chamber can be inspected separately, the fault point can be quickly and accurately located, and maintenance personnel can be convenient for rapid inspection and repair, saving manpower and material costs, while preventing unqualified wafers from flowing into the next process, and improving the quality of film growth.

[0048] In this embodiment, in step S3, the step of troubleshooting the chemical reaction chamber for growing the thin film includes:

[0049] Use professional testing equipment to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities;

[0050] If any abnormality occurs, repair or replace the nozzle and / or pipe and / or flow meter.

[0051] It should be noted that the chemical reaction chamber is mainly composed of process gas flow meters (silane, oxygen, nitrogen), process gas nozzles (silane, oxygen, nitrogen), exhaust pipes, and cooling systems. The components that affect film growth include flow meters, nozzles, and exhaust pipes. Therefore, when film growth is abnormal, the abnormal chamber can be quickly and accurately located, and the components that affect film growth in the abnormal chamber can be checked one by one, such as using professional testing equipment to perform performance tests on nozzles, exhaust pipes, and flow meters to confirm which components are abnormal. If there are any abnormalities, the abnormal components will be maintained or replaced.

[0052] In this embodiment, in step S3, the step of inspecting the thin film grown in each chemical reaction chamber includes:

[0053] Measuring the film to obtain a measurement value, wherein the film evaluation index includes at least one of film thickness, film thickness uniformity, and film density;

[0054] The measured values ​​are analyzed and compared to evaluate whether they meet the expected process standard requirements.

[0055] In this embodiment, the step of measuring the film to obtain a measurement value includes:

[0056] For film thickness and film thickness uniformity, a film thickness measuring instrument is used to measure and obtain measurement values;

[0057] For film compactness, the sample wafer is etched using hydrofluoric acid solution or buffered oxide etchant, and the etching rates are compared to obtain the measured values.

[0058] According to different application requirements, chemical reaction chambers can be divided into many types, such as plasma enhanced chemical vapor deposition (PECVD) reaction chamber, atmospheric pressure chemical vapor deposition (APCVD) reaction chamber, sub-atmospheric pressure chemical vapor deposition (SACVD) reaction chamber, low pressure chemical vapor deposition (LPCVD) reaction chamber, etc. Atmospheric pressure chemical vapor deposition (APCVD) method is used for the growth of LTO (low-temperature CVD oxide) film. The quality of LTO film is mainly judged by three indicators: film thickness, film thickness uniformity, and film density.

[0059] Therefore, when one of the indicators of film thickness, film thickness uniformity, and film density deteriorates, it is necessary to find out which chemical reaction chamber has a problem, and then adjust and improve the flowmeter, nozzle, exhaust pipe and other components of the abnormal chamber. Among them, the film thickness and film thickness uniformity can be measured by the film thickness meter F50 on the sample wafer. To measure the film density, the sample wafer can be corroded with hydrofluoric acid solution (HF solution) or buffered oxide etching solution (BOE solution). By comparing the rate change (corrosion rate) of the film after corrosion, the density of the film can be evaluated. Compare each measured value with the corresponding standard value. If the deviation is large, it means that the indicator does not meet the standard, indicating that the film growth is abnormal.

[0060] In this embodiment, the grown thin film includes: an LTO thin film, a PSG thin film or a BPSG thin film.

[0061] LTO film growth can be achieved through APCVD process, PSG (phosphosilicate glass) film and BPSG (boron phosphosilicate glass) film can be achieved through PECVD process. PSG film and BPSG film can be used as insulating layer, reflow dielectric layer and surface passivation protection layer of semiconductor devices, providing strong guarantee for the stability and reliability of semiconductor devices.

[0062] According to a wafer surface thin film growth inspection method provided by the present invention, when the grown thin film is an LTO thin film, the film growth time is set to 1.5 minutes.

[0063] It should be noted that the time for LTO film growth in a single chamber is set to 1.5 minutes (min). If the time is set too short, less than 1.5 minutes, the film thickness is thin and it is difficult to judge the film growth status. If the time is set too long, more than 1.5 minutes, the film thickness is thick, exceeding the preset production requirements, and at the same time, it will cause more silica powder on the crawler of the conveyor system, causing pollution to the equipment.

[0064] In this embodiment, the inspection method further includes: recording process data of thin film growth of each nozzle, and the process data includes: at least one of the growth rate, temperature, pressure, and gas flow rate of the thin film.

[0065] By recording the process data of thin film growth of each nozzle, the performance of each nozzle in the process of thin film growth can be monitored in real time, and the recorded data can be analyzed to help optimize the parameters of the thin film growth process. In addition, the recorded data can be used as an important basis for troubleshooting and diagnosis. If abnormal film growth occurs, such as no film attached to the silicon wafer, the problem can be located by comparing normal and abnormal process data, which is convenient for troubleshooting.

[0066] Another embodiment of the present invention further provides a chemical vapor deposition device, which is used to perform the wafer surface thin film growth inspection method provided in the above embodiment, comprising:

[0067] at least one chemical reaction chamber, each of the chemical reaction chambers being provided with an independent nozzle;

[0068] A conveying system, used for conveying the wafers to be processed into each of the chemical reaction chambers in sequence;

[0069] A control system for controlling the opening and closing of the conveying system and the nozzle;

[0070] A detection system, used for inspecting the thin film grown on the surface of the wafer to be processed in each of the chemical reaction chambers;

[0071] The troubleshooting system is used to troubleshoot the chemical reaction chamber for growing the thin film when it is detected that the thin film growth result does not meet the preset process standard requirements.

[0072] First, place the wafer on the conveyor system's crawler (Muffle), and then the control system controls the crawler to start conveying the wafer. When the crawler conveys the wafer to the bottom of the chemical reaction chamber to be carried out, the control system turns off the crawler conveyance, and controls the robot arm to place the wafer into the first chemical reaction chamber, opens the nozzle of the chamber, and injects process gas, while the nozzles of other chemical reaction chambers remain closed. In a specific process gas environment, the LTO film is grown, and this process usually lasts 1.5 minutes. After the film growth is completed, the process gas of the chamber is turned off, and the control system controls the robot arm to move the wafer out of the chemical reaction chamber. The thin film grown on the surface of the wafer is inspected by the detection system. If the film meets the preset process standard requirements, the control system controls the wafer to be placed in the second chemical reaction chamber to continue film growth and film inspection. If the inspection finds that the film grown in the second chemical reaction chamber does not meet the preset process standard requirements, the control system will suspend the operation of the chemical vapor deposition equipment, control the fault detection system to perform fault detection on the second chemical reaction chamber, and after the fault detection is completed, resume the operation of the chemical vapor deposition equipment, and continue to put the wafer into the next chemical reaction chamber for film growth and film inspection until chemical vapor deposition is completed in all chemical reaction chambers. In this way, the film grown in each chemical reaction chamber can be inspected separately, the fault point can be quickly and accurately located, and maintenance personnel can quickly detect and repair it, saving manpower and material costs, while preventing unqualified wafers from flowing into the next process, improving the quality of film growth.

[0073] In this embodiment, the detection system includes:

[0074] A first detection module is used to measure the film thickness and the uniformity of the film thickness;

[0075] The second detection module is used to measure the density of the film.

[0076] In this embodiment, the fault detection system includes:

[0077] Performance test module, used to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities;

[0078] The maintenance module is used to repair or replace the nozzle and / or the exhaust pipe and / or the flow meter when an abnormality occurs.

[0079] There are three main indicators for judging the quality of LTO film: film thickness, film thickness uniformity, and film density. Therefore, when one of the indicators of film thickness, film thickness uniformity, and film density deteriorates, it is necessary to use the detection system to find out which chemical reaction chamber has a problem. Among them, the first detection module of the detection system measures the film thickness and film thickness uniformity through a film thickness meter, and the second detection module corrodes the sample wafer through a hydrofluoric acid solution (HF solution) or a buffered oxide etching solution (BOE solution), and then compares the rate change (corrosion rate) of the film after corrosion to evaluate the density of the film. Then the performance test module of the troubleshooting system uses professional equipment to perform performance tests on the flowmeter, nozzle, exhaust pipe and other components of the abnormal chamber. When it is confirmed that a component is abnormal, the maintenance module repairs or replaces the nozzle and / or exhaust pipe and / or flowmeter.

[0080] In summary, the embodiment of the present invention provides a wafer surface thin film growth inspection method and chemical vapor deposition equipment, by placing the wafer to be processed on a conveying system, and placing the wafer to be processed into each chemical reaction chamber in turn through the conveying system; opening the nozzle of each chemical reaction chamber separately to inject the process gas required for thin film growth into the chamber, so as to deposit and form a thin film on the surface of the wafer to be processed; inspecting the thin film grown in each chemical reaction chamber, if the thin film does not meet the preset process standard requirements, suspending the operation of the chemical vapor deposition equipment, troubleshooting the chemical reaction chamber for growing the thin film, and continuing to place the wafer to be processed into the next chemical reaction chamber for thin film growth and thin film inspection after the troubleshooting is completed. The present invention inspects the thin film grown in each chemical reaction chamber separately, can quickly and accurately locate the fault point, facilitates maintenance personnel to quickly troubleshoot and repair, saves manpower and material costs, and at the same time avoids unqualified wafers from flowing into the next process, thereby improving the quality of thin film growth.

[0081] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.

Claims

1. A method for inspecting thin film growth on a wafer surface, characterized in that: include: Placing the wafer to be processed on a conveying system, and sequentially placing the wafer to be processed into each chemical reaction chamber through the conveying system; Opening the nozzle of each chemical reaction chamber individually and injecting process gas required for thin film growth into the chamber to deposit and form a thin film on the surface of the wafer to be processed; The thin film grown in each chemical reaction chamber is inspected. If the thin film does not meet the preset process standard requirements, the operation of the chemical vapor deposition equipment is suspended, and the chemical reaction chamber growing the thin film is troubleshooted. After the troubleshooting is completed, the wafer to be processed is placed in the next chemical reaction chamber for thin film growth and thin film inspection.

2. The method for inspecting wafer surface thin film growth according to claim 1, characterized in that: The step of troubleshooting the chemical reaction chamber for growing the thin film comprises: Use professional testing equipment to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities; If any abnormality occurs, the nozzle and / or the exhaust pipe and / or the flow meter are repaired or replaced.

3. The method for inspecting wafer surface thin film growth according to claim 1, characterized in that: The step of inspecting the thin film grown in each of the chemical reaction chambers comprises: Measuring the film to obtain a measurement value, wherein the index for evaluating the film includes at least one of film thickness, film thickness uniformity, and film density; The measured values ​​are analyzed and compared to evaluate whether the measured values ​​meet the expected process standard requirements.

4. The method for inspecting wafer surface thin film growth according to claim 3, characterized in that: The step of measuring the film to obtain a measurement value comprises: For film thickness and film thickness uniformity, a film thickness measuring instrument is used to measure and obtain measurement values; For film compactness, the sample wafer is etched using hydrofluoric acid solution or buffered oxide etchant, and the etching rates are compared to obtain the measured values.

5. The method for inspecting wafer surface thin film growth according to claim 1, characterized in that: The film includes: LTO film, PSG film or BPSG film.

6. The method for inspecting wafer surface thin film growth according to claim 1, characterized in that: When the grown thin film is an LTO thin film, the film growth time is set to 1.5 minutes.

7. The method for inspecting wafer surface thin film growth according to claim 1, characterized in that: Also includes: The process data of the thin film grown by each nozzle is recorded, wherein the process data includes at least one of the growth rate, temperature, pressure and gas flow rate of the thin film.

8. A chemical vapor deposition device for performing the wafer surface thin film growth inspection method according to any one of claims 1 to 7, characterized in that: include: at least one chemical reaction chamber, each of the chemical reaction chambers being provided with an independent nozzle; A conveying system, used for conveying the wafers to be processed into each of the chemical reaction chambers in sequence; A control system for controlling the opening and closing of the conveying system and the nozzle; A detection system, used for inspecting the thin film grown on the surface of the wafer to be processed in each of the chemical reaction chambers; The troubleshooting system is used to troubleshoot the chemical reaction chamber for growing the thin film when it is detected that the thin film growth result does not meet the preset process standard requirements.

9. The chemical vapor deposition equipment according to claim 8, characterized in that: The detection system comprises: A first detection module is used to measure the film thickness and the uniformity of the film thickness; The second detection module is used to measure the density of the film.

10. The chemical vapor deposition equipment according to claim 8, characterized in that: The troubleshooting system comprises: Performance test module, used to perform performance tests on the nozzle, exhaust pipe and flow meter to confirm whether there are any abnormalities; The maintenance module is used to repair or replace the nozzle and / or the exhaust pipe and / or the flow meter when an abnormality occurs.

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