High-thermal-conductivity Ni-W-P chemical deposition layer for electronic packaging and preparation method thereof
By adding modified carbon fiber particles to the Ni-W-P chemical deposition layer and performing microwave electronic rotation resonance plasma treatment, the problem of insufficient heat dissipation performance of existing electronic packaging materials has been solved. , Meet the heat dissipation needs of high -power chips.
CN119352002APending Publication Date: 2025-01-24SUZHOU UNIV
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Patent Information
- Application Number
- CN202211076479.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-09-05
- Publication Date
- 2025-01-24
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Figure CN119352002A_ABST
Abstract
The invention discloses a high-thermal-conductivity Ni-W-P chemical deposition layer for electronic packaging and a preparation method thereof.The preparation method comprises the steps that carbon fiber particles are subjected to modification treatment in modification liquid, and a Ni-W-P alloy deposition layer is prepared in a Ni-W-P solution added with the modified carbon fiber particles through a chemical deposition technology; and the Ni-W-P alloy deposition layer is subjected to microwave electron cyclotron resonance plasma treatment, and finally the high-thermal-conductivity Ni-W-P chemical deposition layer is obtained. The Ni-W-P chemical deposition layer prepared by the method not only shows the advantages of high hardness, high compactness and high corrosion resistance of the alloy, but also greatly improves the heat conductivity of the Ni-W-P alloy, is an ideal heat dissipation material for the electronic packaging industry, and has a better development prospect.
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