Photoetching method, device and equipment of mask plate and storage medium

Abstract

The invention discloses a photoetching method, device and equipment of a mask plate and a storage medium, relates to the technical field of mask plate manufacturing, and discloses the photoetching method of the mask plate, which comprises the following steps: obtaining an exposure pattern of the mask plate; the exposure graph is input into a position deviation correction model, position correction data of the mask plate corrected by the position deviation model are obtained, and the position deviation correction model is built based on a load rate correction coefficient and a thermal diffusion algorithm corrected by a position correction coefficient; and correcting initial motion data of a photoetching machine for photoetching the mask plate based on the position correction data to obtain corrected motion data of the photoetching machine, and controlling the photoetching machine to photoetch the mask plate based on the corrected motion data. Namely, the position correction data of each pattern area on the mask plate are accurately output by using the position deviation correction model, so that the effect of correcting the position precision deviation of the mask plate is improved through the position correction data.

Description

Technical Field

[0001] The present application relates to the technical field of mask manufacturing, and in particular to a mask lithography method, device, equipment and storage medium. Background Art

[0002] Mask: Mask, also known as photomask, photolithography mask, mask plate, etc., is an indispensable core component in integrated circuit manufacturing. The quality of the mask directly determines the accuracy and performance of the integrated circuit.

[0003] In the photolithography process of mid-to-high-end masks, the thermal effect caused by high-energy electron beam bombarding the photoresist will cause local position accuracy deviation, especially in the high-load rate area. At present, the position accuracy deviation is reduced by improving the accuracy of ambient temperature control, increasing thermal conductivity, adjusting the exposure process or method to reduce the thermal effect. However, it may be constrained by physical limitations, cost and technical feasibility, resulting in low effect of reducing position accuracy deviation.

[0004] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0005] The main purpose of the present application is to provide a mask lithography method, which aims to solve the technical problem that the current method of reducing position accuracy deviation is subject to physical limitations, cost and technical feasibility, resulting in low effect of reducing position accuracy deviation.

[0006] To achieve the above object, the present application proposes a mask lithography method, the method comprising:

[0007] Obtaining an exposure pattern of a mask;

[0008] Inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient;

[0009] The initial motion data of the lithography machine for etching the mask is corrected based on the position correction data, the corrected motion data of the lithography machine is obtained, and the lithography machine is controlled to lithography the mask based on the corrected motion data.

[0010] In one embodiment, the step of obtaining the exposure pattern of the mask plate includes:

[0011] Obtaining the actual position deviation of each sample measurement mark on the sample mask and the theoretical position deviation obtained based on a preset thermal expansion algorithm;

[0012] Determining a load factor correction coefficient and a position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation;

[0013] Based on the load rate correction coefficient and the position correction coefficient, correcting the heat diffusion algorithm to obtain a heat diffusion correction algorithm;

[0014] A position deviation correction model is constructed according to the thermal diffusion correction algorithm and the thermal expansion algorithm.

[0015] In one embodiment, the step of determining the load rate correction coefficient and the position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation comprises:

[0016] Converting the deviation value between the actual position deviation and the theoretical position deviation into a heat deviation;

[0017] Determining a load factor correction coefficient during photolithography of the sample mask based on the thermal deviation;

[0018] Modifying the position difference between the auxiliary pattern marked on the sample mask and the measurement mark when the load rate is determined, obtaining the actual position deviation of each modification, and obtaining the corresponding theoretical position deviation;

[0019] Based on each modified actual position deviation and the corresponding theoretical position deviation, a position correction coefficient corresponding to each load factor is determined.

[0020] In one embodiment, the step of obtaining the actual position deviation of each sample measurement mark on the sample mask includes:

[0021] Obtaining the initial position accuracy of the sample measurement mark and the blank auxiliary pattern when exposed on the sample mask, and obtaining the deviation position accuracy between the sample measurement mark and the sample auxiliary pattern carrying the load rate;

[0022] The initial position accuracy is subtracted from the deviation position accuracy to obtain the actual position deviation of each sample measurement mark.

[0023] In one embodiment, the step of inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model comprises:

[0024] Inputting the exposure pattern into a position deviation correction model, and determining a temperature fluctuation map of each pattern area on the mask based on a heat diffusion correction algorithm in the position deviation correction model;

[0025] Based on the thermal expansion algorithm in the position deviation correction model, the temperature fluctuation is converted into a position deviation map, so that the position deviation model outputs the position correction data of the mask based on the position deviation map.

[0026] In one embodiment, the step of inputting the exposure pattern into a position deviation correction model and determining the temperature fluctuation map of each pattern area on the mask based on a heat diffusion correction algorithm in the position deviation correction model comprises:

[0027] Inputting the exposure pattern into a position deviation correction model to identify the pattern structure of each pattern area in the exposure pattern;

[0028] Determining the temperature fluctuation of each of the graphic regions based on a heat diffusion correction algorithm corresponding to the graphic structure;

[0029] According to each of the temperature fluctuations, a temperature fluctuation diagram of each graphic area on the mask is determined.

[0030] In addition, to achieve the above-mentioned purpose, the present application also proposes a mask lithography device, the mask lithography device comprising:

[0031] An acquisition module, used for acquiring an exposure pattern of a mask;

[0032] A data determination module, used for inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient;

[0033] The correction module is used to correct the initial motion data of the lithography machine for etching the mask based on the position correction data, obtain the corrected motion data of the lithography machine, and control the lithography machine to lithography the mask based on the corrected motion data.

[0034] In addition, to achieve the above-mentioned purpose, the present application also proposes a mask lithography device, which includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask lithography method as described above.

[0035] In addition, to achieve the above objectives, the present application also proposes a storage medium, which is a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the mask lithography method described above are implemented.

[0036] In addition, to achieve the above-mentioned purpose, the present application also provides a computer program product, which includes a computer program, and when the computer program is executed by a processor, the steps of the mask lithography method as described above are implemented.

[0037] One or more technical solutions proposed in this application have at least the following technical effects:

[0038] The present application can determine the position accuracy deviation of each area according to the graphic structure of the load conditions (load rate) of each local area of ​​the mask through the exposure pattern of the mask before lithography. Since the temperature of the mask will be affected by various factors during the lithography process, in order to make the heat diffusion algorithm more in line with the actual situation, the exposure pattern is input into the position deviation correction model constructed after the heat diffusion algorithm is repaired by the load rate correction coefficient and the position correction coefficient, and the influence of the thermal effect generated by the graphic structure on the position accuracy is determined, and the position correction data that needs to be corrected is obtained, so that the position deviation correction model can more accurately output the position correction data of each graphic structure on the mask, and then the initial motion data set at the beginning of the lithography machine is corrected by the position correction data to obtain the corrected motion data of the lithography machine, and the corrected motion data is used to control the lithography mask of the lithography machine to improve the effect of correcting the position accuracy deviation of the mask. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0040] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0041] Figure 1 A schematic diagram of a process flow provided for the first embodiment of the photolithography method of the mask of the present application;

[0042] Figure 2 A schematic diagram of a process flow provided for the second embodiment of the photolithography method of the mask of the present application;

[0043] Figure 3 A schematic diagram showing an initial position exposure pattern provided in Example 2 of the present application;

[0044] Figure 4 A schematic diagram of a process flow provided for the third embodiment of the photolithography method for a mask of the present application;

[0045] Figure 5 A schematic diagram of a position deviation correction vector provided in Embodiment 3 of the present application;

[0046] Figure 6 A schematic diagram of the module structure of a photolithography device for a mask according to an embodiment of the present application;

[0047] Figure 7 Schematic diagram of the equipment structure of the hardware operating environment involved in the mask lithography method in the embodiment of the present application.

[0048] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0049] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0050] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0051] The main solution of the embodiment of the present application is: the lithography control platform obtains the exposure pattern of the mask; the exposure pattern is input into the position deviation correction model to obtain the position correction data of the mask after being corrected by the position deviation model, and the position deviation correction model is constructed based on the thermal diffusion algorithm corrected by the load rate correction coefficient and the position correction coefficient; based on the position correction data, the initial motion data of the lithography machine for etching the mask is corrected to obtain the corrected motion data of the lithography machine, and based on the corrected motion data, the lithography machine is controlled to lithography the mask.

[0052] In this embodiment, for the convenience of description, the following description is made by taking the lithography control platform as the execution subject.

[0053] In the photolithography process of mid-to-high-end masks in the existing technology, the thermal effect caused by the high-energy electron beam bombarding the photoresist will cause local position accuracy deviation, especially in the high-load rate area. At present, the position accuracy deviation is reduced by improving the accuracy of ambient temperature control, increasing the thermal conductivity, and adjusting the exposure process or method to reduce the thermal effect. However, it may be constrained by physical limitations, cost and technical feasibility, resulting in low effect of reducing position accuracy deviation.

[0054] The present application provides a solution. Through the exposure pattern of the mask before lithography, the position accuracy deviation of each area can be determined according to the graphic structure of each local area of ​​the mask containing the load condition (load rate). Since the temperature of the mask during the lithography process will be affected by various factors, in order to make the heat diffusion algorithm more in line with the actual situation, the exposure pattern is input into a position deviation correction model constructed after the heat diffusion algorithm is repaired by the load rate correction coefficient and the position correction coefficient, the influence of the thermal effect generated by the graphic structure on the position accuracy is determined, and the position correction data that needs to be corrected is obtained, so that the position deviation correction model can more accurately output the position correction data of each graphic structure on the mask, and then the initial motion data set at the beginning of the lithography machine is corrected by the position correction data to obtain the corrected motion data of the lithography machine, and the corrected motion data is used to control the lithography mask of the lithography machine to improve the effect of correcting the position accuracy deviation of the mask.

[0055] It should be noted that the execution subject of this embodiment may be a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or an electronic device capable of realizing the above functions, a lithography control platform, etc. The following takes the lithography control platform as an example to illustrate this embodiment and the following embodiments.

[0056] Based on this, the present application embodiment provides a mask lithography method, referring to Figure 1 , Figure 1 This is a schematic diagram of the process of the first embodiment of the mask lithography method of the present application.

[0057] In this embodiment, the mask lithography method includes steps S10 to S40:

[0058] Step S10, obtaining the exposure pattern of the mask;

[0059] It should be noted that the exposure pattern can be that the light emitted by the illumination light source is irradiated onto the mask through a converging lens, and diffraction light beams are generated through the mask. These diffraction light beams carry the graphic information on the mask. The light beams are focused onto the wafer surface through a projection lens, forming an image of the mask pattern on the wafer surface.

[0060] It can be understood that since the exposure pattern includes a graphic area carrying a load rate, where the load rate can be the ratio of the graphic area in a certain area to the total area, the mask template position deviation can be accurately determined subsequently through the graphic area in the exposure pattern.

[0061] Step S20, inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient;

[0062] It should be noted that the position deviation correction model may be a model for determining the position accuracy deviation on the mask due to temperature change. In order to accurately reflect the relationship between heat and position, the position deviation correction model includes a heat diffusion algorithm. The position correction data may be the position deviation of each graphic area affected by heat in the exposure graphic. The load rate correction coefficient may be a coefficient required to repair the load rate. The position correction coefficient may be a correction coefficient of the position deviation corresponding to the corrected load rate.

[0063] Among them, since the position deviation of each graphic area may be different, when the position deviation correction model performs position deviation correction on the graphic area in the exposure graphic, it is necessary to determine the corresponding position correction coefficient based on the graphic area, and correct the thermal diffusion algorithm through the load rate correction coefficient and position correction coefficient corresponding to the graphic area.

[0064] It can be understood that since the position deviation correction model is built based on the thermal diffusion algorithm corrected by the load rate correction coefficient and the position correction coefficient, the relationship between temperature and position can be determined through the thermal diffusion algorithm. Since there are many factors that affect the load rate and the formation of the exposure pattern of the mask during the lithography process, the thermal diffusion algorithm is corrected by the load rate correction coefficient and the position correction coefficient, so that the corrected thermal diffusion algorithm is more in line with the actual situation, thereby improving the accuracy of position deviation correction.

[0065] Step S30, correcting the initial motion data of the lithography machine for etching the mask based on the position correction data, obtaining the corrected motion data of the lithography machine, and controlling the lithography machine for etching the mask based on the corrected motion data.

[0066] It should be noted that the initial motion data may be motion data of the photolithography machine set by the user of the photolithography mask, or uncorrected motion data formed according to the pattern area in the diffraction exposure pattern of the mask, etc. The corrected motion data may be motion data of the photolithography machine corresponding to each pattern area after the position accuracy deviation of the pattern area in the exposure pattern is corrected.

[0067] It can be understood that since the lithography machine performs photolithography on the mask, it is necessary to determine the motion trajectory of the lithography machine, that is, the initial motion trajectory, and since the motion trajectory of the lithography machine corresponds to the position of the graphic area, after correcting the position accuracy deviation of the graphic area, the correction data of the position accuracy deviation of the graphic area is also adapted to the correction of the motion trajectory of the lithography machine. Therefore, the initial motion data of the lithography machine is corrected according to the position correction data to obtain the corrected motion data of the lithography machine, so that the lithography machine can correct the accuracy of the movement of the lithography machine according to the local high temperature of the mask, so as to improve the effect of correcting the position accuracy deviation of the mask.

[0068] The present embodiment provides a photolithography method for a mask. Through the exposure pattern of the mask before photolithography, the position accuracy deviation of each area can be determined according to the graphic structure of each graphic area of ​​the mask. Since the temperature of the mask during the photolithography process will be affected by various factors, in order to make the heat diffusion algorithm more in line with the actual situation, the exposure pattern is input into a position deviation correction model constructed after the heat diffusion algorithm is repaired by the load rate correction coefficient and the position correction coefficient, and the influence of the thermal effect generated by the graphic structure on the position accuracy is determined, and the position correction data that needs to be corrected is obtained, so that the position deviation correction model can more accurately output the position correction data of each graphic structure on the mask, and then the initial motion data set by the photolithography machine is corrected by the position correction data to obtain the corrected motion data of the photolithography machine, and the corrected motion data is used to control the photolithography mask of the photolithography machine to improve the effect of correcting the position accuracy deviation of the mask.

[0069] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as those in the above-mentioned embodiment 1 can refer to the above introduction, and will not be repeated later. Figure 2 Before step S10, the mask lithography method further includes steps S01 to S04:

[0070] Step S01, obtaining the actual position deviation of each sample measurement mark on the sample mask and the theoretical position deviation obtained based on a preset thermal expansion algorithm;

[0071] It should be noted that the measurement mark can be a point on the mask that needs to be measured due to a position change caused by a temperature change. The actual position deviation can be the position accuracy deviation obtained after actual measurement due to a deviation in the position accuracy of the measurement mark caused by the high temperature part of the mask. The thermal expansion algorithm can be an algorithm used to calculate the amount of expansion or contraction of a material under temperature changes. The theoretical position deviation can be an ideal position deviation calculated based on the parameters required by the thermal expansion algorithm, and the theoretical position deviation ignores the influence of actual factors. Among them, the position accuracy can be the difference between the exposure pattern position coordinates produced by the mask and the design coordinates, which indicates the accuracy of the mask pattern position. The smaller the difference, the better.

[0072] It is understandable that since the position deviation directly calculated according to the thermal expansion algorithm will not conform to the actual situation and thus produce an error with the actual position deviation, it is possible to obtain the actual position deviation measured by a position measuring instrument and the theoretical position deviation calculated according to the thermal expansion algorithm, so as to facilitate the correction of the thermal expansion algorithm through the actual position deviation, so as to make the thermal expansion algorithm more consistent with the actual situation.

[0073] Step S02, determining a load factor correction coefficient and a position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation;

[0074] It is understandable that due to the presence of various uncontrollable factors that affect the theoretical heat during actual photolithography of the mask, and thus affect the position deviation of the mask measurement, it is necessary to determine the load rate correction coefficient and position correction coefficient of the sample mask based on the difference between the actual position deviation and the theoretical position deviation, so that the corrected thermal expansion algorithm can reduce the impact of the photolithography environment and obtain a position deviation that is closer to the actual one.

[0075] Step S03, based on the load rate correction coefficient and the position correction coefficient, correcting the heat diffusion algorithm to obtain a heat diffusion correction algorithm;

[0076] Step S04: constructing a position deviation correction model according to the thermal diffusion correction algorithm and the thermal expansion algorithm.

[0077] It can be understood that by using the thermal diffusion algorithm and the thermal expansion algorithm to build a position deviation correction model, the influence of heat on the position deviation of the mask after deformation can be corrected. Therefore, the position deviation of the mask affected by temperature can be corrected more accurately based on the position correction model built using the thermal diffusion correction algorithm and the thermal expansion algorithm.

[0078] Furthermore, step S02 may also include:

[0079] Converting the deviation value between the actual position deviation and the theoretical position deviation into a heat deviation;

[0080] Determining a load factor correction coefficient during photolithography of the sample mask based on the thermal deviation;

[0081] Modifying the position difference between the auxiliary pattern marked on the sample mask and the measurement mark when the load rate is determined, obtaining the actual position deviation of each modification, and obtaining the corresponding theoretical position deviation;

[0082] Based on each modified actual position deviation and the corresponding theoretical position deviation, a position correction coefficient corresponding to each load factor is determined.

[0083] It should be noted that the deviation value may be the difference between the actual position deviation and the theoretical position deviation.

[0084] It is understandable that when the mask is photolithographed, the thermal effect caused by the high-energy light beam hitting the photoresist causes local position accuracy deviation, that is, after the exposure pattern is affected by high temperature, the substrate of the mask will undergo thermal expansion, causing the position of the circuit diagram on the mask to have accuracy deviation. In order to avoid repeated corrections to the heat diffusion algorithm, the temperature-related load rate can be determined first to correct the error coefficient between the actual temperature and the theoretical temperature during design, that is, the load rate correction coefficient. By first determining the load rate correction coefficient of the mask, the range of position deviation correction can be determined, thereby improving the efficiency of position accuracy correction during mask photolithography.

[0085] In a specific implementation, the heat diffusion equation may be: Q = (K) (T1-T2) / r, and the heat diffusion equation may be corrected specifically by: subtracting the actual position deviation value from the measured theoretical position deviation value to determine the error between the theory and the actual, and converting the deviation value into heat through the thermal expansion coefficient of the mask substrate, thereby obtaining the Q correction coefficient A under this condition, that is, obtaining the preliminary heat diffusion algorithm: AQ = (K) (T1-T2) / r, and determining the load rate correction coefficient corresponding to the load rate by changing different load rates. Then, according to the thermal expansion coefficient, determine the range of variation of the position accuracy corresponding to each load rate, and after determining the load rate, determine the position deviation correction coefficient B corresponding to different positions of each load rate by changing the distance between the measuring mark and the auxiliary pattern, and obtain the final heat diffusion correction algorithm: AQ = B (K) (T1-T2) / r. Among them, Q is heat, K is thermal conductivity, T1 and T2 are the temperatures of the starting point and the end point, and r is the distance between the two points. The starting point is the midpoint of the measurement target or the midpoint of the auxiliary image, and the end point is the midpoint of the auxiliary graphic or the midpoint of the measurement target.

[0086] Furthermore, step S01 further includes:

[0087] Obtaining the initial position accuracy of the sample measurement mark and the blank auxiliary pattern when exposed on the sample mask, and obtaining the deviation position accuracy between the sample measurement mark and the sample auxiliary pattern carrying the load rate;

[0088] The initial position accuracy is subtracted from the deviation position accuracy to obtain the actual position deviation of each sample measurement mark.

[0089] It should be noted that the blank auxiliary figure can be an auxiliary figure with a certain distance from the measurement mark in a certain direction. Figure 3The blank auxiliary pattern represents an auxiliary pattern without a load rate, that is, the temperature within the auxiliary pattern is close to the temperature at the measurement mark, and no local expansion of the mask occurs. The sample auxiliary pattern can be an auxiliary pattern with a certain load rate, in which the direction of the arrow represents the correction direction of the position deviation, and the length of the line segment represents the correction amount of the position offset.

[0090] It is understandable that, since the temperature of each graphic area on the mask may be different, in order to determine the influence of temperature on the position accuracy of the measuring mark, when building the position deviation correction model, it is necessary to first expose the exposure pattern of the measuring mark and the blank auxiliary pattern, so as to determine the position accuracy when the mask is not affected by high temperature based on the exposure pattern, and then expose the measuring mark and the sample auxiliary pattern carrying the load rate, so as to determine the position accuracy when the mask is affected by temperature based on the exposure pattern, and determine the actual position deviation of each sample measurement mark based on the position accuracy difference between the two, so as to determine the actual position offset of the mask after being affected by temperature.

[0091] Based on the first and second embodiments of the present application, in the third embodiment of the present application, the same or similar contents as those in the above embodiments can be referred to the above introduction, and will not be described in detail later. Figure 4 , step S20 also includes steps S1 to S2:

[0092] Step S1, inputting the exposure pattern into a position deviation correction model, and determining a temperature fluctuation diagram of each pattern area on the mask based on a heat diffusion correction algorithm in the position deviation correction model;

[0093] Step S2, based on the thermal expansion algorithm in the position deviation correction model, converting the temperature fluctuation into a position deviation map, so that the position deviation model outputs the position correction data of the mask based on the position deviation map.

[0094] It should be noted that the temperature fluctuation diagram can be a diagram representing the temperature fluctuation of each graphic area on the mask. The position deviation diagram can be a vector diagram representing each auxiliary graphic caused by temperature (refer to Figure 5 ).

[0095] It can be understood that the thermal diffusion correction algorithm in the position deviation correction model is used to determine the temperature fluctuation of each graphic area on the mask. Since the thermal diffusion correction algorithm in the position deviation correction model is an algorithm that has been corrected for load rate and position accuracy, it can be more in line with the actual situation. Therefore, the thermal diffusion correction algorithm in the position deviation correction model is used to accurately determine the temperature fluctuation diagram of each graphic area, so as to improve the reference accuracy for the subsequent correction of the motion data of the lithography machine, thereby improving the efficiency of correcting the position accuracy deviation of the mask.

[0096] It can be understood that after obtaining the temperature fluctuation map, the local temperature conditions of the mask can be determined. In order to convert the temperature fluctuation into position deviation, the thermal expansion algorithm in the position deviation correction model is used to convert the temperature fluctuation map into a position deviation map according to the thermal expansion coefficient of the mask substrate to determine the extent to which the position accuracy of each graphic area is affected by temperature.

[0097] It should be noted that the mask substrate can be quartz glass, which is usually used to make high-precision mask products because of its advantages such as high transmittance, high flatness, and low thermal expansion coefficient. The thermal expansion coefficient can be a physical quantity that describes the dimensional change of a substance under temperature changes, including the linear expansion coefficient α, which is the lateral expansion coefficient of quartz glass.

[0098] In the specific implementation, the temperature fluctuation value is converted into the position deviation value according to the thermal expansion coefficient of the substrate. Taking the quartz substrate as an example, the linear expansion coefficient of quartz is 0.53×10 -6 / ℃, that is, when the temperature rises by 1℃, 100mm of quartz glass will expand by 53nm.

[0099] α = ΔL / (L*ΔT);

[0100]

[0101] Among them, α represents the linear expansion coefficient of glass, ΔL represents the change value of glass substrate, L represents the value of original length, ΔT represents the change of temperature, Indicates the offset compensation of quartz glass in the x direction, represents the offset compensation amount of the quartz glass in the y direction, θ represents the direction of the position offset, x represents the position offset of the quartz glass in the x direction, and y represents the position offset of the quartz glass in the y direction.

[0102] Furthermore, step S1 further includes:

[0103] Inputting the exposure pattern into a position deviation correction model to identify the pattern structure of each pattern area in the exposure pattern;

[0104] Determining the temperature fluctuation of each of the graphic regions based on a heat diffusion correction algorithm corresponding to the graphic structure;

[0105] According to each of the temperature fluctuations, a temperature fluctuation diagram of each graphic area on the mask is determined.

[0106] It is understandable that since the load rate represents the load of the mask in the graphic area, different loads correspond to different heat. In order to accurately determine the temperature in each graphic area, a thermal diffusion correction algorithm is used to determine the temperature fluctuation of each graphic area more in line with the actual situation.

[0107] In the specific implementation, participating Figure 5 , combined with the actual exposure pattern, a temperature fluctuation MAP caused by the thermal effect in the entire plate is formed. According to the thermal expansion coefficient of the glass substrate, the temperature difference is converted into the linear expansion of the glass substrate, thereby obtaining the position deviation of the entire plate caused by the thermal effect (such as Figure 5 ), and then correct the position deviation to the lithography machine position accuracy MAP.

[0108] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the photolithography method of the mask of the present application. More simple transformations based on this technical concept are all within the protection scope of the present application.

[0109] The present application also provides a mask lithography device, please refer to Figure 6 , the mask lithography device comprises:

[0110] An acquisition module 10, used to acquire an exposure pattern of a mask;

[0111] A data determination module 20, for inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient;

[0112] The correction module 30 is used to correct the initial motion data of the lithography machine for etching the mask based on the position correction data, obtain the corrected motion data of the lithography machine, and control the lithography machine to lithography the mask based on the corrected motion data.

[0113] Optionally, the data determination module 20 is further used to obtain the actual position deviation of each sample measurement mark on the sample mask and the theoretical position deviation obtained based on a preset thermal expansion algorithm; determine the load rate correction coefficient and the position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation; correct the thermal diffusion algorithm based on the load rate correction coefficient and the position correction coefficient to obtain a thermal diffusion correction algorithm; and build a position deviation correction model based on the thermal diffusion correction algorithm and the thermal expansion algorithm.

[0114] Optionally, the data determination module 20 is also used to convert the deviation value between the actual position deviation and the theoretical position deviation into a thermal deviation; based on the thermal deviation, determine the load rate correction coefficient during photolithography of the sample mask; when the load rate is determined, modify the position difference between the auxiliary graphic marked on the sample mask and the measurement mark to obtain each modified actual position deviation, and obtain the corresponding theoretical position deviation; based on each modified actual position deviation and the corresponding theoretical position deviation, determine the position correction coefficient corresponding to each load rate.

[0115] Optionally, the data determination module 20 is further used to obtain the initial position accuracy of the sample measurement mark and the blank auxiliary pattern when exposed on the sample mask, and obtain the deviation position accuracy between the sample measurement mark and the sample auxiliary pattern carrying the load rate; and subtract the initial position accuracy from the deviation position accuracy to obtain the actual position deviation of each sample measurement mark.

[0116] Optionally, the data determination module 20 is also used to input the exposure pattern into a position deviation correction model, and determine the temperature fluctuation diagram of each graphic area on the mask based on the thermal diffusion correction algorithm in the position deviation correction model; based on the thermal expansion algorithm in the position deviation correction model, convert the temperature fluctuation into a position deviation diagram, so that the position deviation model outputs the position correction data of the mask based on the position deviation diagram.

[0117] Optionally, the data determination module 20 is also used to input the exposure pattern into a position deviation correction model to identify the graphic structure of each graphic area in the exposure pattern; determine the temperature fluctuation of each graphic area based on a thermal diffusion correction algorithm corresponding to the graphic structure; and determine the temperature fluctuation map of each graphic area on the mask according to each temperature fluctuation.

[0118] The lithography device of the mask provided in the present application adopts the lithography method of the mask in the above embodiment, which can solve the technical problem that the current method of reducing the position accuracy deviation is subject to physical limitations, cost and technical feasibility, resulting in low effect of reducing the position accuracy deviation. Compared with the prior art, the beneficial effects of the lithography device of the mask provided in the present application are the same as the beneficial effects of the lithography method of the mask provided in the above embodiment, and other technical features of the lithography device of the mask are the same as the features disclosed in the above embodiment method, which will not be repeated here.

[0119] The present application provides a mask lithography device, which includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the mask lithography method in the above-mentioned embodiment one.

[0120] Reference below Figure 7, which shows a schematic diagram of the structure of a lithography device suitable for implementing a mask in an embodiment of the present application. The lithography device for the mask in an embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 7 The mask lithography device shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0121] like Figure 7 As shown, the lithography apparatus for the mask may include a processing device 1001 (e.g., a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. Various programs and data required for the operation of the lithography apparatus for the mask are also stored in the RAM 1004. The processing device 1001, the ROM 1002, and the RAM 1004 are connected to each other via a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Typically, the following systems may be connected to the I / O interface 1006: input devices 1007 including, for example, a touch screen, a touchpad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; output devices 1008 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; storage devices 1003 including, for example, a magnetic tape, a hard disk, etc.; and communication devices 1009. The communication device 1009 may allow the lithography apparatus of the mask to communicate with other devices wirelessly or by wire to exchange data. Although the lithography apparatus of the mask with various systems is shown in the figure, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems may be implemented or have instead.

[0122] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0123] The lithography device of the mask provided in the present application adopts the lithography method of the mask in the above embodiment, which can solve the technical problem that the current method of reducing the position accuracy deviation is subject to physical limitations, cost and technical feasibility, resulting in low effect of reducing the position accuracy deviation. Compared with the prior art, the beneficial effects of the lithography device of the mask provided in the present application are the same as the beneficial effects of the lithography method of the mask provided in the above embodiment, and the other technical features of the lithography device of the mask are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0124] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0125] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0126] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer program) stored thereon, wherein the computer-readable program instructions are used to execute the mask lithography method in the above-mentioned embodiment.

[0127] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency), etc., or any suitable combination of the above.

[0128] The computer-readable storage medium may be included in the lithography equipment of the mask; or may exist independently without being assembled into the lithography equipment of the mask.

[0129] The computer-readable storage medium carries one or more programs. When the one or more programs are executed by the lithography equipment of the mask, the lithography equipment of the mask: obtains the exposure pattern of the mask; inputs the exposure pattern into the position deviation correction model to obtain the position correction data of the mask after being corrected by the position deviation model, wherein the position deviation correction model is constructed based on the thermal diffusion algorithm corrected by the load rate correction coefficient and the position correction coefficient; corrects the initial motion data of the lithography machine that lithographs the mask based on the position correction data, obtains the corrected motion data of the lithography machine, and controls the lithography machine to lithograph the mask based on the corrected motion data.

[0130] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0131] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present application. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0132] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.

[0133] The readable storage medium provided by the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned mask lithography method, and can solve the technical problem that the current method for reducing position accuracy deviation is subject to physical limitations, cost, and technical feasibility, resulting in low effect of reducing position accuracy deviation. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided by the present application are the same as the beneficial effects of the mask lithography method provided by the above-mentioned embodiment, and will not be repeated here.

[0134] The present application also provides a computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the steps of the mask lithography method as described above are implemented.

[0135] The computer program product provided by the present application can solve the technical problem that the current method for reducing the position accuracy deviation is subject to physical limitations, cost and technical feasibility, resulting in low effect of reducing the position accuracy deviation. Compared with the prior art, the beneficial effects of the computer program product provided by the present application are the same as the beneficial effects of the mask lithography method provided by the above embodiment, and will not be elaborated here.

[0136] The above descriptions are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A mask lithography method, characterized in that: The method includes: Obtaining an exposure pattern of a mask; Inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient; The initial motion data of the lithography machine for etching the mask is corrected based on the position correction data, the corrected motion data of the lithography machine is obtained, and the lithography machine is controlled to lithography the mask based on the corrected motion data.

2. The method according to claim 1, characterized in that The step of obtaining the exposure pattern of the mask plate includes: Obtaining the actual position deviation of each sample measurement mark on the sample mask and the theoretical position deviation obtained based on a preset thermal expansion algorithm; Determining a load factor correction coefficient and a position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation; Based on the load rate correction coefficient and the position correction coefficient, correcting the heat diffusion algorithm to obtain a heat diffusion correction algorithm; A position deviation correction model is constructed according to the thermal diffusion correction algorithm and the thermal expansion algorithm.

3. The method according to claim 2, characterized in that The step of determining the load rate correction coefficient and the position correction coefficient of the sample mask based on the actual position deviation and the theoretical position deviation comprises: Converting the deviation value between the actual position deviation and the theoretical position deviation into a heat deviation; Determining a load factor correction coefficient during photolithography of the sample mask based on the thermal deviation; Modifying the position difference between the auxiliary pattern marked on the sample mask and the measurement mark when the load rate is determined, obtaining the actual position deviation of each modification, and obtaining the corresponding theoretical position deviation; Based on each modified actual position deviation and the corresponding theoretical position deviation, a position correction coefficient corresponding to each load factor is determined.

4. The method according to claim 2, characterized in that The step of obtaining the actual position deviation of each sample measurement mark on the sample mask comprises: Obtaining the initial position accuracy of the sample measurement mark and the blank auxiliary pattern when exposed on the sample mask, and obtaining the deviation position accuracy between the sample measurement mark and the sample auxiliary pattern carrying the load rate; The initial position accuracy is subtracted from the deviation position accuracy to obtain the actual position deviation of each sample measurement mark.

5. The method according to claim 1, characterized in that The step of inputting the exposure pattern into the position deviation correction model to obtain the position correction data of the mask after being corrected by the position deviation model comprises: Inputting the exposure pattern into a position deviation correction model, and determining a temperature fluctuation map of each pattern area on the mask based on a heat diffusion correction algorithm in the position deviation correction model; Based on the thermal expansion algorithm in the position deviation correction model, the temperature fluctuation is converted into a position deviation map, so that the position deviation model outputs the position correction data of the mask based on the position deviation map.

6. The method according to claim 5, characterized in that The step of inputting the exposure pattern into a position deviation correction model and determining a temperature fluctuation diagram of each pattern area on the mask based on a heat diffusion correction algorithm in the position deviation correction model comprises: Inputting the exposure pattern into a position deviation correction model to identify the pattern structure of each pattern area in the exposure pattern; Determining the temperature fluctuation of each of the graphic regions based on a heat diffusion correction algorithm corresponding to the graphic structure; According to each of the temperature fluctuations, a temperature fluctuation diagram of each graphic area on the mask is determined.

7. A mask lithography device, characterized in that: The device comprises: An acquisition module, used for acquiring an exposure pattern of a mask; A data determination module, used for inputting the exposure pattern into a position deviation correction model to obtain position correction data of the mask after correction by the position deviation model, wherein the position deviation correction model is constructed based on a thermal diffusion algorithm corrected by a load rate correction coefficient and a position correction coefficient; The correction module is used to correct the initial motion data of the lithography machine for etching the mask based on the position correction data, obtain the corrected motion data of the lithography machine, and control the lithography machine to lithography the mask based on the corrected motion data.

8. A mask lithography device, characterized in that: The device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask lithography method according to any one of claims 1 to 6.

9. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the mask lithography method according to any one of claims 1 to 6 are implemented.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the steps of the mask lithography method according to any one of claims 1 to 6 are implemented.

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