Thermal neutron shielding structure and manufacturing method thereof, and thermal neutron failure protection method

Abstract

The invention relates to a thermal neutron shielding structure, a manufacturing method thereof and a thermal neutron failure protection method. The manufacturing method of the thermal neutron shielding structure comprises the steps that a semiconductor device is provided, and the semiconductor device is sensitive to thermal neutron failure; setting an element with a thermal neutron absorption cross section in the semiconductor device as a target absorption element; simulating thermal neutron shielding effects of a thermal neutron shielding structure with the target absorption element under different parameters, and determining protection parameters of the thermal neutron shielding structure according to a simulation result; and manufacturing the thermal neutron shielding structure according to the protection parameters. The influence of thermal neutron radiation on the semiconductor device is reduced or eliminated, and the reliability of the semiconductor device in the atmosphere neutron radiation environment is improved.

Description

Technical Field

[0001] The present application relates to the technical field of thermal neutron failure protection of semiconductor devices, and in particular to a thermal neutron shielding structure and a manufacturing method thereof, and a thermal neutron failure protection method. Background Art

[0002] The flux of low-energy thermal neutrons (neutrons with an average energy of 0.026 eV) in the natural atmospheric environment is comparable to the flux of high-energy neutrons (i.e., neutrons with an energy greater than 10 MeV), and they are the two main sources of atmospheric neutron single-particle effects. Semiconductor devices naturally contain boron isotopes 10B, such as boro-phospho-silicate glass (BPSG), which has a very large capture cross-section for low-energy thermal neutrons and will react with low-energy thermal neutrons to produce charged alpha particles and lithium (Li) ions. These secondary ions may cause soft errors in integrated circuits or single-particle burnout of power semiconductor devices.

[0003] As semiconductor process nodes continue to shrink, some special polishing and etching processes introduce boron-containing gases, such as diborane (B2H6) used in the etching gas used in the metal and via processes below the 65nm process node, and boron trichloride gas (BCl3) used in the plasma etching process of the ultra-fine metal wiring process, which leads to the presence of a large amount of 10B isotopes in the metal layer of advanced process devices and re-emerges the problem of thermal neutron failure of semiconductor devices. In particular, for aviation applications, the atmospheric high-energy neutrons generated inside the aircraft through the mitigation of fuel, crew members, or carbon-based materials widely used in the fuselage structure are more than the thermal neutrons generated in the natural atmosphere, making the flux of thermal neutrons inside the cabin (especially the engine position) much higher than the flux of high-energy neutrons. When the thermal neutron flux inside the cabin is too high, soft errors of semiconductor devices caused by single-particle effects may cause fatal hazards. Summary of the invention

[0004] Based on this, it is necessary to provide a thermal neutron shielding structure and a manufacturing method thereof, and a thermal neutron failure protection method to reduce or eliminate the negative impact of thermal neutron radiation on semiconductor devices.

[0005] In a first aspect, the present application provides a method for manufacturing a thermal neutron shielding structure, comprising:

[0006] Providing a semiconductor device, the semiconductor device being sensitive to thermal neutron failure;

[0007] Setting an element having a thermal neutron absorption cross section in the semiconductor device as a target absorption element;

[0008] Simulating the thermal neutron shielding effect of a thermal neutron shielding structure having the target absorption element under different parameters, and determining the protection parameters of the thermal neutron shielding structure according to the simulation results;

[0009] The thermal neutron shielding structure is manufactured according to the protection parameters.

[0010] In one embodiment, the simulation simulates the thermal neutron shielding effect of a thermal neutron shielding structure having the target absorption element under different parameters, and determines the protection parameters of the thermal neutron shielding structure according to the simulation results, including:

[0011] Selecting the type of shielding material of the thermal neutron shielding structure, wherein the shielding material at least includes the target absorbing element;

[0012] Setting the thermal neutron shielding structure with different parameters, and simulating the shielding effect of the thermal neutron shielding structure relative to a thermal neutron source when the parameters are different;

[0013] When the proportion of thermal neutrons emitted by the thermal neutron source that can penetrate the thermal neutron shielding structure is less than a target value, determining the parameter of the thermal neutron shielding structure as a protection parameter;

[0014] Wherein, the parameters at least include the content of the target absorbing element in the shielding material and the thickness of the thermal neutron shielding structure.

[0015] In one of the embodiments, the shielding material includes one of boron carbide polyethylene and silver indium chromium alloy.

[0016] In one embodiment, the element having a thermal neutron absorption cross section includes at least one of boron, boron-10 isotope, silver, and cadmium.

[0017] In a second aspect, the present application provides a thermal neutron shielding structure, which is manufactured using the manufacturing method of the thermal neutron shielding structure.

[0018] In one of the embodiments, for an anisotropic thermal neutron source, the thermal neutron shielding structure is a plate-shaped structure, and the semiconductor device and the thermal neutron source are respectively disposed on two sides of the thermal neutron shielding structure.

[0019] In one of the embodiments, for an isotropic thermal neutron source, the thermal neutron shielding structure is a shell structure having a cavity inside, the semiconductor device is disposed in the cavity, and the thermal neutron source is located outside the thermal neutron shielding structure.

[0020] In one of the embodiments, the thickness of the thermal neutron shielding structure ranges from 1 mm to 5 mm.

[0021] In one of the embodiments, the content of the target absorbing element in the shielding material of the thermal neutron shielding structure is 5% to 15%.

[0022] In a third aspect, the present application also provides a method for protecting against thermal neutron failure, comprising:

[0023] Detect whether semiconductor devices are sensitive to thermal neutron failure;

[0024] In the case where the semiconductor device is sensitive to thermal neutron failure, manufacturing the thermal neutron shielding structure of the semiconductor device according to the manufacturing method of the thermal neutron shielding structure;

[0025] The thermal neutron shielding structure is arranged between the semiconductor device and a thermal neutron source.

[0026] In one embodiment, a method for detecting whether the semiconductor device is sensitive to thermal neutron failure includes:

[0027] Performing elemental composition analysis on the semiconductor device using secondary ion mass spectrometry;

[0028] In the case where the semiconductor device includes an element having a thermal neutron absorption cross section in its elemental composition, the semiconductor device is determined to be sensitive to thermal neutron failure.

[0029] In one embodiment, the process of performing elemental composition analysis on the semiconductor device using secondary ion mass spectrometry includes:

[0030] bombarding the surface of the semiconductor device with a secondary ion beam, so that atoms on the surface of the semiconductor device are sputtered out and become charged secondary ions;

[0031] The charge-to-mass ratio of the secondary ions is analyzed by a mass spectrometer to obtain the elemental composition contained in the semiconductor device.

[0032] In summary, the present application sets an element with a thermal neutron absorption cross section in a semiconductor device that is sensitive to thermal neutron failure as a target absorption element, and determines the protection parameters of the thermal neutron shielding structure by simulating the thermal neutron shielding effect of the thermal neutron shielding structure with the target absorption element under different parameters. The thermal neutron shielding structure is manufactured according to the protection parameters, thereby realizing thermal neutron protection for semiconductor devices, reducing or eliminating the influence of thermal neutron radiation on semiconductor devices, and improving the reliability of semiconductor devices in an atmospheric neutron radiation environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 A flow chart of a method for manufacturing a thermal neutron shielding structure provided in one embodiment of the present application.

[0035] Figure 2 A schematic diagram of a process for simulating the thermal neutron shielding effect of a thermal neutron shielding structure provided by an embodiment of the present application.

[0036] Figure 3 A schematic diagram of the change in energy spectrum of thermal neutrons after penetrating shielding materials under different parameters provided in one embodiment of the present application.

[0037] Figure 4 A schematic diagram of the thermal neutron shielding effect of a thermal neutron shielding structure provided in one embodiment of the present application under different parameters.

[0038] Figure 5 A schematic structural diagram of a thermal neutron shielding structure corresponding to an anisotropic thermal neutron source provided in one embodiment of the present application.

[0039] Figure 6 A schematic structural diagram of a thermal neutron shielding structure corresponding to an isotropic thermal neutron source provided in an embodiment of the present application.

[0040] Figure 7 A flow chart of a method for protecting against thermal neutron failure provided in one embodiment of the present application.

[0041] Figure 8 A schematic diagram of the secondary ion mass spectrometry analysis principle provided in one embodiment of the present application.

[0042] Explanation of the reference numerals: 10 - semiconductor device; 20 - thermal neutron shielding structure; 21 - cavity; A - secondary ion beam; B - secondary ion; C - thermal neutron. DETAILED DESCRIPTION

[0043] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0045] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0046] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0047] When used herein, the singular forms "a", "an" and " / the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0048] See also Figure 1 The present application provides a method for manufacturing a thermal neutron shielding structure, which is characterized by comprising:

[0049] Step S01: providing a semiconductor device, where the semiconductor device is sensitive to thermal neutron failure.

[0050] Step S02: setting an element having a thermal neutron absorption cross section in the semiconductor device as a target absorption element.

[0051] Step S03: simulating the thermal neutron shielding effect of a thermal neutron shielding structure having a target absorbing element under different parameters, and determining the protection parameters of the thermal neutron shielding structure according to the simulation results.

[0052] Step S04: manufacturing a thermal neutron shielding structure according to the protection parameters.

[0053] It can be seen that by setting the elements with thermal neutron absorption cross-sections in semiconductor devices as target absorption elements, screening out the protection parameters of the thermal neutron shielding structure with the target absorption elements through simulation, and manufacturing the corresponding thermal neutron shielding structure, thermal neutron protection for semiconductor devices is achieved, the influence of thermal neutron radiation on semiconductor devices is reduced or eliminated, and the reliability of semiconductor devices in atmospheric neutron radiation environment is improved.

[0054] In one of the embodiments, a process of simulating the thermal neutron shielding effect of a thermal neutron shielding structure having a target absorption element under different parameters and determining the protection parameters of the thermal neutron shielding structure according to the simulation results includes: selecting the type of shielding material of the thermal neutron shielding structure, the shielding material at least including the target absorption element; setting a thermal neutron shielding structure with different parameters, and simulating the shielding effect of the thermal neutron shielding structure relative to a thermal neutron source under different parameters; when the proportion of thermal neutrons emitted by the thermal neutron source that can penetrate the thermal neutron shielding structure is less than a target value, the parameters of the thermal neutron shielding structure are protection parameters; wherein the parameters of the thermal neutron shielding structure at least include the content of the target absorption element in the shielding material and the thickness of the thermal neutron shielding structure.

[0055] In one embodiment, the element with the thermal neutron absorption cross section includes at least one of boron (B), boron-10 isotope, silver (Ag), and cadmium (Cd). These elements are mixed with other materials to make a composite shielding material of a thermal neutron shielding structure to improve the thermal neutron absorption capacity of the thermal neutron shielding structure.

[0056] In one embodiment, the optional shielding material includes one of boron carbide polyethylene and silver indium chromium alloy. Exemplarily, boron carbide polyethylene material (also called boron-containing polyethylene) is a high-performance composite material, mainly made of polyethylene (PE) and boron carbide (B4C) powder mixed and pressed through a series of processes. It contains a large amount of boron-10 isotope, has a high thermal neutron absorption cross section, can effectively absorb thermal neutron radiation, and can be used as the first choice for thermal neutron shielding materials.

[0057] See also Figure 2 , the type, material composition (including the content of the target absorption element in the shielding material) and thickness of the shielding material of the thermal neutron shielding structure 20 are set in the simulation to simulate the effect of thermal neutrons C penetrating the thermal neutron shielding structure. At this time, by adjusting the parameters of the thermal neutron shielding structure in the simulation (including at least the material composition and thickness of the shielding material) for optimization, the expected thermal neutron shielding effect can be achieved.

[0058] For example, when the shielding material is boron carbide polyethylene material and the energy range of thermal neutrons is 0.01eV~1eV, the shielding effect of the thermal neutron shielding structure with different thicknesses and different material compositions is as follows: Figure 3 As shown. It can be seen that, at the same thickness, compared with the thermal neutron shielding structure made of polyethylene containing 5% boron carbide, the flux attenuation of thermal neutrons after passing through the thermal neutron shielding structure made of polyethylene containing 15% boron carbide is more obvious. This means that the thermal neutron shielding structure made of polyethylene containing 15% boron carbide has a better shielding effect on thermal neutrons. Similarly, when the shielding material has the same type and the same material composition, compared with the thermal neutron shielding structure with a thickness of 1mm, the flux attenuation of thermal neutrons after passing through the thermal neutron shielding structure with a thickness of 5mm or 10mm is more obvious. This means that the thicker the thermal neutron shielding structure, the more obvious the shielding effect on thermal neutrons.

[0059] At the same time, it should be emphasized that the thickness setting of the thermal neutron shielding structure needs to be comprehensively considered based on the combined cost, portability and actual application scenarios, and the preferred thickness range is between 1mm and 5mm. In the case of a thickness range of 1mm to 5mm, the shielding effect of the thermal neutron shielding structure can be adjusted by adjusting the type of shielding material of the thermal neutron shielding structure and adjusting the content of the target absorption element in the shielding material to ensure the effectiveness and practicality of the thermal neutron shielding structure.

[0060] Figure 4 shows the simulation results of the thermal neutron shielding effect of the thermal neutron shielding structure made of boron carbide polyethylene materials with different thicknesses and different material compositions. Figure 4 Whether it is a thermal neutron shielding structure made of polyethylene material containing 15% boron carbide or 5% boron carbide, when the thickness reaches 5mm, the proportion of thermal neutrons that can penetrate the thermal neutron shielding structure is less than 10%. This means that more than 90% of thermal neutrons are blocked by the thermal neutron shielding structure, achieving a good shielding effect. Among the shielded thermal neutrons, more than 80% of the thermal neutrons are shielded due to the capture effect of the boron-10 isotope in the thermal neutron shielding structure, which shows that the content of boron-10 isotope in the shielding material is also a key factor affecting the shielding effect of the thermal neutron shielding structure.

[0061] In one embodiment, appropriate protection parameters (i.e., shielding material specifications, including the type, material composition, and thickness of the shielding material, etc.) can be selected according to the simulation structure of the thermal neutron shielding structure to manufacture the thermal neutron shielding structure. The thermal neutron shielding structure isolates the semiconductor device from the thermal neutron source to prevent thermal neutrons from entering the semiconductor device, thereby reducing the risk of thermal neutron failure of the electronic device.

[0062] Correspondingly, the present application also provides a thermal neutron shielding structure, which is manufactured using the aforementioned thermal neutron failure protection method. Figure 5 In one embodiment, the thermal neutron shielding structure 20 is located between the semiconductor device 10 and a thermal neutron source (not shown in the figure), and the parameters of the thermal neutron shielding structure 20 are protection parameters determined in the protection method for thermal neutron failure.

[0063] See also Figure 5 In one embodiment, the thermal neutron source is an anisotropic thermal neutron source, the thermal neutron shielding structure 20 is a plate-like structure, and the semiconductor device 10 and the thermal neutron source are respectively arranged on both sides of the thermal neutron shielding structure 20. Optionally, the thermal neutron shielding structure 20 can be a flat plate-like structure or a curved plate-like structure, or the specific shape of the thermal neutron shielding structure 20 can be adjusted according to actual conditions, and it is only necessary to ensure that "the thermal neutron shielding structure 20 can block the thermal neutrons C emitted by the thermal neutron source from emitting to the semiconductor device 10", and this application does not limit this.

[0064] See also Figure 6In one embodiment, the thermal neutron source is an isotropic thermal neutron source, the thermal neutron shielding structure 20 is a shell structure with a cavity 21 inside, the semiconductor device 10 is arranged in the cavity 21, and the thermal neutron source is located outside the thermal neutron shielding structure 20. Optionally, the thermal neutron shielding structure 20 can be a hollow sphere or a cylindrical structure with a cavity inside, or the specific shape of the thermal neutron shielding structure 20 can be adjusted according to actual needs, and it only needs to ensure that "the thermal neutron shielding structure 20 can block the thermal neutrons C emitted by the thermal neutron source from emitting to the semiconductor device 10", and this application does not limit this.

[0065] In one embodiment, the material of the thermal neutron shielding structure 20 may be a composite shielding material containing a target absorption element. The target absorption element is an element having a thermal neutron absorption cross section in a semiconductor device. Optionally, the element having a thermal neutron absorption cross section includes at least one of boron (B), boron-10 isotope, silver (Ag), and cadmium (Cd), and the composite shielding material is a material formed by mixing these target absorption elements with other materials. In other embodiments of the present application, the material of the thermal neutron shielding structure may also be one of boron carbide polyethylene and silver indium chromium alloy.

[0066] See also Figure 7 Accordingly, the present application also provides a method for protecting against thermal neutron failure, comprising:

[0067] Step S1: Detecting whether the semiconductor device is sensitive to thermal neutron failure;

[0068] Step S2: in the case where the semiconductor device is sensitive to thermal neutron failure, manufacturing a thermal neutron shielding structure of the semiconductor device according to a manufacturing method of the thermal neutron shielding structure;

[0069] Step S3: Disposing a thermal neutron shielding structure between the semiconductor device and a thermal neutron source.

[0070] In one embodiment, a method for detecting whether a semiconductor device is sensitive to thermal neutron failure includes: performing elemental composition analysis on the semiconductor device using secondary ion mass spectrometry; if the elemental composition of the semiconductor device includes an element with a thermal neutron absorption cross section, the semiconductor device is sensitive to thermal neutron failure; otherwise, the semiconductor device is not sensitive to thermal neutron failure.

[0071] For example, taking the boron-10 isotope (i.e., the 10B isotope) as an example, when thermal neutrons are incident on a semiconductor device and captured by the boron-10 isotope in the semiconductor device, the charged ions generated by the capture reaction may cause soft errors or failures in the semiconductor device. Therefore, it is possible to determine whether the main elemental components constituting the semiconductor device contain the boron-10 isotope by secondary ion mass spectrometry. If a semiconductor device contains a large amount of boron-10 isotope, it is considered that the semiconductor device is sensitive to thermal neutrons, and the possibility of failure of the semiconductor device due to thermal neutrons needs to be considered and protected. On the contrary, it is considered that the semiconductor device is not sensitive to thermal neutrons, and the problem of failure of the semiconductor device due to thermal neutrons can be ignored.

[0072] See also Figure 8 In one embodiment, the process of using secondary ion mass spectrometry to analyze the elemental composition of a semiconductor device includes: bombarding the surface of the semiconductor device 10 with a secondary ion beam A, so that atoms on the surface of the semiconductor device 10 are sputtered out and become charged secondary ions B; using a mass spectrometer to analyze the charge-to-mass ratio of the secondary ions B, thereby obtaining the elemental composition contained in the semiconductor device. Optionally, the mass spectrometer is composed of at least a magnetic analyzer and a four-stage mass filter.

[0073] It should be noted that in the process of performing elemental composition analysis on semiconductor devices using secondary ion mass spectrometry, element identification can be performed while continuously stripping the surface atoms of the semiconductor device 10 using the secondary ion beam A until the active region (not shown in the figure) of the semiconductor device 10 is exposed, thereby obtaining the distribution of elemental composition of the semiconductor device in the depth direction. This method helps to determine the distribution of each element (especially elements with thermal neutron absorption cross sections) in the entire semiconductor device.

[0074] It should be noted that by detecting whether semiconductor devices are sensitive to thermal neutron failure, semiconductor devices that need thermal neutron protection can be screened out, reducing the cost of thermal neutron protection; by adopting the aforementioned thermal neutron shielding structure manufacturing method to manufacture the thermal neutron shielding structure corresponding to the semiconductor device, and arranging the thermal neutron shielding structure between the thermal neutron source and the semiconductor device, the influence of thermal neutron radiation on the semiconductor device can be reduced or eliminated, thereby improving the reliability of the semiconductor device in the atmospheric neutron radiation environment. Since the manufacturing method of the thermal neutron shielding structure and the thermal neutron shielding structure have been described in detail in the aforementioned part, this application will not be repeated here.

[0075] In summary, the present application provides a thermal neutron shielding structure and a manufacturing method thereof, and a method for protecting against thermal neutron failure, wherein an element with a thermal neutron absorption cross section in a semiconductor device that is sensitive to thermal neutron failure is set as a target absorption element, and the protection parameters of the thermal neutron shielding structure are determined by simulating the thermal neutron shielding effect of the thermal neutron shielding structure with the target absorption element under different parameters, and the thermal neutron shielding structure is manufactured according to the protection parameters, thereby realizing thermal neutron protection for semiconductor devices, reducing or eliminating the influence of thermal neutron radiation on semiconductor devices, and improving the reliability of semiconductor devices in an atmospheric neutron radiation environment.

[0076] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0077] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for manufacturing a thermal neutron shielding structure, characterized in that: include: Providing a semiconductor device, the semiconductor device being sensitive to thermal neutron failure; Setting an element having a thermal neutron absorption cross section in the semiconductor device as a target absorption element; Simulating the thermal neutron shielding effect of a thermal neutron shielding structure having the target absorption element under different parameters, and determining the protection parameters of the thermal neutron shielding structure according to the simulation results; The thermal neutron shielding structure is manufactured according to the protection parameters.

2. The method for manufacturing a thermal neutron shielding structure according to claim 1, characterized in that: The simulation simulates the thermal neutron shielding effect of a thermal neutron shielding structure having the target absorption element under different parameters, and determines the protection parameters of the thermal neutron shielding structure according to the simulation results, including: Selecting the type of shielding material of the thermal neutron shielding structure, wherein the shielding material at least includes the target absorbing element; Setting the thermal neutron shielding structure with different parameters, and simulating the shielding effect of the thermal neutron shielding structure relative to a thermal neutron source when the parameters are different; When the proportion of thermal neutrons emitted by the thermal neutron source that can penetrate the thermal neutron shielding structure is less than a target value, determining the parameter of the thermal neutron shielding structure as a protection parameter; Wherein, the parameters at least include the content of the target absorbing element in the shielding material and the thickness of the thermal neutron shielding structure.

3. The method for manufacturing a thermal neutron shielding structure according to claim 2, characterized in that: The shielding material includes one of boron carbide polyethylene and silver indium chromium alloy.

4. The method for manufacturing a thermal neutron shielding structure according to claim 1, characterized in that: The element having a thermal neutron absorption cross section includes at least one of boron, boron-10 isotope, silver and cadmium.

5. A thermal neutron shielding structure, characterized in that: The thermal neutron shielding structure is manufactured by the manufacturing method of any one of claims 1 to 4.

6. The thermal neutron shielding structure according to claim 5, characterized in that: For an anisotropic thermal neutron source, the thermal neutron shielding structure is a plate-shaped structure, and the semiconductor device and the thermal neutron source are respectively arranged on two sides of the thermal neutron shielding structure.

7. The thermal neutron shielding structure according to claim 5, characterized in that: For an isotropic thermal neutron source, the thermal neutron shielding structure is a shell structure with a cavity inside, the semiconductor device is arranged in the cavity, and the thermal neutron source is located outside the thermal neutron shielding structure.

8. The thermal neutron shielding structure according to claim 5, characterized in that: The thickness of the thermal neutron shielding structure ranges from 1 mm to 5 mm.

9. The thermal neutron shielding structure according to claim 5 or 8, characterized in that: The content of the target absorption element in the shielding material of the thermal neutron shielding structure is 5% to 15%.

10. A method for protecting against thermal neutron failure, characterized in that: include: Detect whether semiconductor devices are sensitive to thermal neutron failure; In the case where the semiconductor device is sensitive to thermal neutron failure, a thermal neutron shielding structure of the semiconductor device is manufactured according to the method for manufacturing a thermal neutron shielding structure according to any one of claims 1 to 4; The thermal neutron shielding structure is arranged between the semiconductor device and a thermal neutron source.

11. The method for protecting against thermal neutron failure according to claim 10, characterized in that: The method for detecting whether the semiconductor device is sensitive to thermal neutron failure includes: Performing elemental composition analysis on the semiconductor device using secondary ion mass spectrometry; In the case where the semiconductor device includes an element having a thermal neutron absorption cross section in its elemental composition, the semiconductor device is determined to be sensitive to thermal neutron failure.

12. The thermal neutron failure protection method according to claim 11, characterized in that: The process of performing elemental composition analysis on the semiconductor device using secondary ion mass spectrometry includes: bombarding the surface of the semiconductor device with a secondary ion beam, so that atoms on the surface of the semiconductor device are sputtered out and become charged secondary ions; The charge-to-mass ratio of the secondary ions is analyzed by a mass spectrometer to obtain the elemental composition contained in the semiconductor device.

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